Cleaning method and film forming apparatus

Abstract

The invention provides a technology capable of stably removing a film formed on a substrate supporting part and the like during film formation. The cleaning method includes a step (A) in which a substrate on which a film formation process is performed is carried out from the inside of a processing container, and a step (B) in which, after the step (A), a substrate support part for supporting the substrate and / or a peripheral part of the substrate support part is cleaned inside the processing container. In the step (B), while the substrate supporting part is rotated, the substrate supporting part or the nozzle mechanism part is relatively moved so that the discharge port of the nozzle mechanism part passes through the center of the substrate supporting part, and the cleaning gas is discharged from the discharge port of the nozzle mechanism part toward the substrate supporting part and / or the peripheral part of the substrate supporting part, thereby cleaning the substrate supporting part and / or the peripheral part of the substrate supporting part. And partially cleaning the substrate support part and / or the film formation area of the peripheral part of the substrate support part.

Description

Technical Field

[0001] The invention relates to a cleaning method and a film forming device. Background Art

[0002] In the past, there has been known a film forming apparatus that causes a plurality of wafers (substrates) held on a susceptor to revolve while supplying a variety of processing gases from above to form a desired film on the surface of the substrate. In recent years, with the miniaturization and high performance of semiconductor devices, a film forming method is desired that forms a film with excellent in-plane uniformity of film thickness in a thin film.

[0003] For example, Patent Document 1 discloses a film forming apparatus that forms a film by disposing a gas supply unit above each of two substrates arranged horizontally in a processing container, rotating each gas supply unit around an axis between the two substrates while exhausting gas toward each substrate.

[0004] [Prior art literature]

[0005] [Patent Literature]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2018-62703 Summary of the invention

[0007] [Problems to be solved by the invention]

[0008] The present invention provides a technique for stably removing a film formed on a substrate support portion or the like during film formation.

[0009]

Methods to solve the problem

[0010] According to one embodiment of the present invention, a cleaning method is provided, which is a cleaning method for cleaning the interior of a cleaning processing container, comprising: (A) step of moving a substrate to be subjected to film forming processing out of the interior of the processing container, (B) step of cleaning a substrate support portion supporting the substrate and / or a peripheral portion of the substrate support portion in the interior of the processing container after the (A) step, wherein in the (B) step, while rotating the substrate support portion, the substrate support portion or the nozzle mechanism portion is relatively moved in a manner such that a discharge port of the nozzle mechanism portion passes through the center of the substrate support portion, and a cleaning gas is discharged from the discharge port of the nozzle mechanism portion toward the substrate support portion and / or a peripheral portion of the substrate support portion, thereby partially cleaning the film forming area of ​​the substrate support portion and / or a peripheral portion of the substrate support portion.

[0011] [Effects of the invention]

[0012] According to one embodiment, a film formed on a substrate support portion or the like can be stably removed during film formation. BRIEF DESCRIPTION OF THE DRAWINGS

[0013]

Figure 1

[0014]

Figure 2

[0015]

Figure 3

[0016]

Figure 4

[0017]

Figure 5

[0018]

Figure 6

[0019]

Figure 7

[0020]

Figure 8

[0021]

Fig. 9

[0022]

Fig.10

[0023]

Fig.11

[0024] Hereinafter, the embodiment of the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are given the same reference numerals, and repeated descriptions may be omitted.

[0025] [Structure of film forming apparatus 1]

[0026] The film forming device 1 according to the embodiment is as follows: Figure 1 As shown, the film forming device 1 is configured as a blade-type device that processes each substrate W separately. As a substrate process, the film forming device 1 performs a film forming process based on an atomic layer deposition (ALD: Atomic Layer Deposition) method or a molecular layer deposition (MLD: Molecular Layer Deposition) method. As the substrate W to be subjected to the film forming process, a semiconductor wafer such as a silicon semiconductor, a compound semiconductor or an oxide semiconductor can be cited. The substrate W can have a pattern such as a groove or a via.

[0027] The film forming apparatus 1 includes a processing container 10, a substrate support unit 20, a gas supply unit 30, a gas exhaust unit 40, and a nozzle mechanism unit 50. The film forming apparatus 1 also includes a control unit 90 for controlling the operation of each component of the film forming apparatus 1.

[0028] The processing container 10 is a rectangular box-shaped container having an internal space IS capable of accommodating the substrate W. The size of the processing container 10 is preferably set according to the size of the substrate W to be processed. For example, when the diameter of the substrate W is 300 mm, the length of each side of the processing container 10 is formed to be about 400 mm to 500 mm. In addition, the shape of the processing container 10 is not particularly limited, and can be formed into, for example, a cylindrical shape (circular in top view).

[0029] A gate valve that can open and close the internal space IS is provided on the side of the processing container 10. The film forming device 1 opens the gate valve before film forming, and moves the substrate W from the outside of the processing container 10 into the internal space IS through the transport device 2 provided in the substrate processing system (not shown). After moving in, the film forming device 1 closes the gate valve to perform film forming. After film forming, the film forming device 1 opens the gate valve, and then allows the transport device 2 to enter the internal space IS to move the substrate W out of the processing container 10. In addition, Figure 1 The embodiment shown in FIG. 1 is provided with a plurality of (three) gate valves, and the substrate W can be loaded and unloaded through any gate valve. However, at least one gate valve is sufficient in the processing container 10 .

[0030] like Figure 2 As shown, the processing container 10 includes a lower concave container 11 with an open upper side, and an upper concave container 12 with an open lower side covering the lower concave container 11. The lower concave container 11 and the upper concave container 12 are fixed in a form of blocking each other's openings, thereby forming an internal space IS of the processing container 10. In addition, Figure 1 In the figure, for the convenience of explanation, the film forming device 1 is shown with the upper concave container 12 removed.

[0031] The lower concave container 11 has a bottom wall 111 formed in a substantially square shape when viewed from above, and an outer edge protrusion 112 protruding relatively short from the outer edges of the four sides of the bottom wall 111 to the upper side in the vertical direction. The lower concave container 11 is provided with a substrate support portion 20 on the inner side. A through hole 111a is formed at the center of the bottom wall 111, into which the shaft portion 22 of the substrate support portion 20 described later is inserted. The central area including the center of the bottom wall 111 is a concave portion 111b that is depressed downward relative to the adjacent annular area. In addition, a peripheral platform portion 111c that protrudes upward relative to the annular area is formed outside the annular area of ​​the bottom wall 111 and between the outer edge protrusion 112.

[0032] The concave portion 111b is provided with a temperature control unit 14 for controlling the temperature of the substrate W held on the substrate support unit 20. The temperature control unit 14 is not particularly limited, and may be a structure using a heater such as an electric heating wire, or a structure using a flow path that circulates a temperature control medium that controls the temperature through a heat exchanger, or a combination thereof. The temperature control unit 14 is connected to the control unit 90 through a temperature control driver (not shown) and the like, and controls the temperature under the control of the control unit 90.

[0033] On the other hand, the upper concave container 12 has a top wall 121 that is roughly square (the same shape as the bottom wall 111) when viewed from above, and a side wall 122 that protrudes shorter in the vertical direction downward from the outer edges of the four sides of the top wall 121. The processing container 10 is fixed in a state where the lower end of the side wall 122 and the upper end of the outer edge protrusion 112 face each other. A sealing component (not shown) is provided between the lower end of the side wall 122 and the upper end of the outer edge protrusion 112, thereby the internal space IS is airtightly closed. The above-mentioned gate valve, for example, opens and closes the side port 122a (see Figure 1 ).

[0034] The substrate support 20 provided on the processing container 10 rotatably holds the substrate W. The substrate support 20 includes a susceptor 21 directly holding the substrate W, a shaft 22 supporting the susceptor 21 , and a substrate rotating unit 23 connected to the shaft 22 outside the processing container 10 .

[0035] The base 21 is formed in a perfect circular shape that is slightly larger than the substrate W in a plan view, and has a placement surface 21a that extends horizontally in the processing container 10. The placement surface 21a is surrounded by an edge that is consistent with the thickness of the placed substrate W or larger than the thickness of the substrate W and protrudes. In addition, the substrate support 20 is provided with a plurality of lifting pin lifting mechanisms (not shown) for receiving and transferring the substrate W to and from the transport device 2. In addition, the base 21 may be configured such that when the substrate W is placed on the placement surface 21a, the substrate W is fixed by an appropriate holding means (mechanical lock, adsorption, electrostatic suction cup, etc.).

[0036] The shaft portion 22 is connected to the center of the lower surface of the base 21 and extends along the axial direction (vertical direction) of the processing container 10. The shaft portion 22 is rotated around the axis by the substrate rotating operation portion 23, thereby rotating the base 21. A magnetic fluid sealing portion 24 is provided between the outer peripheral surface of the shaft portion 22 and the through hole 111a of the bottom wall 111 of the processing container 10 to seal the shaft portion 22 rotatably.

[0037] The substrate rotating action part 23 has a motor and a drive transmission part (not shown) connecting the motor and the shaft part 22. The motor of the substrate rotating action part 23 is connected to the control part 90 through a driver (not shown). In the substrate rotating action part 23, based on the command of the control part 90, the power adjusted by the driver is supplied to the motor, thereby rotating the shaft part 22 at an appropriate rotation speed.

[0038] Figure 1 He Ru Figure 2 As shown, the gas supply unit 30 has a plurality of supply passages 31 for circulating film-forming gas (adsorbed gas, reactive gas), cleaning gas, and purge gas outside the processing container 10, and gas is supplied into the processing container 10 through each supply passage 31. The film-forming gas supplied to the processing container 10 is selected to be a suitable gas according to the type of film to be formed on the substrate W. For example, when a silicon oxide film (SiO2 film) is formed, a silicon-containing gas such as a silane-based gas can be used as an adsorbed gas. As a reactive gas, an oxygen-containing gas such as an oxygen (O2) gas or an ozone (O3) gas can be used. As a purge gas, an inactive gas such as a nitrogen (N2) gas or an argon (Ar) gas can be used. As a purge gas, for example, a mixed gas of fluorine (F2) gas, nitrogen trifluoride (NF3) gas, chlorine (Cl2) gas, tetrafluoromethane (CF4) gas, trifluoromethane (CHF3), O2 gas, O3 gas, Ar gas, N2 gas, and the like can be used.

[0039] The plurality of supply passages 31 include an adsorption gas supply passage 31A for circulating an adsorption gas, a reaction gas supply passage 31B for circulating a reaction gas, a cleaning gas supply passage 31C for circulating a cleaning gas, and a cleaning gas supply passage 31D for circulating a cleaning gas. Each supply passage 31 includes a plurality of tanks 32 for storing gas, a plurality of on-off valves 33 for opening and closing each supply passage 31, and a plurality of flow rate regulators 34 for regulating the flow rate of the gas flowing in the flow path of each supply passage 31.

[0040] The plurality of boxes 32 include an adsorption gas box 32A storing an adsorption gas, a reaction gas box 32B storing a reaction gas, a cleaning gas box 32C storing a cleaning gas, and a cleaning gas box 32D storing an etching gas. In addition, each opening and closing valve 33 and each flow regulator 34 are connected to the control unit 90 through a suitable driver. The control unit 90 opens the opening and closing valve 33 of each supply passage 31 of the specified gas at a suitable timing, and adjusts the flow rate of the gas through the flow regulator 34, thereby supplying the specified gas to the processing container 10.

[0041] On the other hand, the gas exhaust unit 40 has a plurality of exhaust passages 41 for circulating gas (reacted gas, unreacted gas, cleaning gas, etc.) outside the processing container 10, and exhausts the gas supplied into the processing container 10 through the exhaust passages 41. The plurality of exhaust passages 41 are divided into three systems according to three mechanisms (first nozzle mechanism 60, second nozzle mechanism 70, third nozzle mechanism 80) of the nozzle mechanism unit 50 described later.

[0042] The first exhaust passage 42 is connected to the first nozzle mechanism 60 and its vicinity, and mainly exhausts the gas exhausted from the first nozzle mechanism 60. The first exhaust passage 42 has a plurality of (two) branch exhaust passages 421, and a confluent exhaust passage 422 where each branch exhaust passage 421 merges and collects the exhaust gas. A branch exhaust passage 421A is directly connected to the first nozzle mechanism 60, and exhausts the gas of the first nozzle mechanism 60. A pressure regulating valve 423A for adjusting the suction pressure in the first nozzle mechanism 60 is provided in the branch exhaust passage 421A.

[0043] The other branch exhaust passage 421B is connected to the annular area of ​​the bottom wall 111 of the processing container 10, and exhausts the gas in the internal space IS around the base 21. The bottom wall 111 is provided with an annular exhaust groove 15 (see Figure 1 The branch discharge passage 421B is connected to the bottom of the discharge groove 15. In addition, an exhaust net 16 is preferably provided on the upper opening of the discharge groove 15 to make the conduction of the gas uniform in the circumferential direction during the discharge.

[0044] A suction mechanism 424 (such as a turbomolecular pump or a vacuum pump) is connected to one end of the confluent discharge passage 422 to suck the gas of the entire first discharge passage 42. Furthermore, a pressure regulating valve 423B is provided on the confluent discharge passage 422 to adjust the pressure of the gas sucked in the entire first system.

[0045] The second exhaust passage 43 is connected to the second nozzle mechanism 70 and its vicinity, and mainly exhausts the gas from the second nozzle mechanism 70. The second exhaust passage 43 also has a plurality of (two) branch exhaust passages 431, and a combined exhaust passage 432 that combines the branch exhaust passages 431 and collects and exhausts the gas, similar to the first exhaust passage 42. One branch exhaust passage 431A is connected to the second nozzle mechanism 70, and exhausts the gas from the second nozzle mechanism 70. A pressure regulating valve 433A for adjusting the suction pressure in the second nozzle mechanism 70 is provided at a midway position of the branch exhaust passage 431A. Another branch exhaust passage 431B is connected to the annular area (the bottom of the exhaust groove 15) of the bottom wall 111 of the processing container 10, and exhausts the gas in the internal space IS around the susceptor 21.

[0046] A suction mechanism 434 (e.g., a turbomolecular pump, a vacuum pump) is connected to one end of the confluent discharge passage 432 in order to suck the gas of the entire second discharge passage 43. Furthermore, a pressure regulating valve 433B is provided at a midway position of the confluent discharge passage 432 for adjusting the suction pressure in the entire second system.

[0047] The third exhaust passage 44 is connected to the third nozzle mechanism 80 and its vicinity, and mainly exhausts the gas of the third nozzle mechanism 80. The third exhaust passage 44 is omitted in the figure, but like the first exhaust passage 42 and the second exhaust passage 43, one passage may be connected to the third nozzle mechanism 80, and the other passage may have a plurality of (two) branch passages and a confluent passage connected to the bottom wall 111 of the processing container 10. A pressure regulating valve (not shown) for adjusting the gas pressure is provided at an appropriate position of the branch passage. In addition, a suction mechanism 444 is connected to one end of the confluent passage of the third exhaust passage 44 in order to suck the gas of the entire third exhaust passage 44.

[0048] Furthermore, the nozzle mechanism part 50 has a function of discharging film forming gas and cleaning gas from the surface (upper surface) of the substrate W held on the susceptor 21 in the processing container 10, and simultaneously sucking the gas above the substrate W. Furthermore, the nozzle mechanism part 50 has a function of discharging cleaning gas from the substrate support part 20 and / or the peripheral part of the substrate support part 20, and simultaneously sucking the gas above the substrate W. Therefore, the nozzle mechanism part 50 includes a first nozzle mechanism 60, a second nozzle mechanism 70, and a third nozzle mechanism 80 according to the adsorption gas, reaction gas, and cleaning gas supplied to the substrate W. Furthermore, in the film forming device 1, the first nozzle mechanism 60, the second nozzle mechanism 70, and the third nozzle mechanism 80 are each swung relative to the substrate support part 20 in the processing container 10. As a result, the first processing point area PR1 (refer to Figure 3(A)), the second processing point area PR2 (refer to Figure 4 (A)) and the third processing point region PR3 (refer to Figure 5 (A)) move independently of each other.

[0049] The first nozzle mechanism 60 is provided at one of the four corners of the processing container 10 (the lower concave container 11). Figure 1 The first nozzle mechanism 60 discharges the adsorbed gas and the cleaning gas and simultaneously sucks the discharged gas. Specifically, the first nozzle mechanism 60 includes a first nozzle 61, a first nozzle operating portion 62 provided at the base end of the first nozzle 61, and a first head portion 63 provided at the protruding end (front end) of the first nozzle 61.

[0050] The first nozzle 61 is provided on the peripheral stage 111c of the bottom wall 111, and extends parallel to the mounting surface 21a of the susceptor 21 (in the horizontal direction) at a position higher than the substrate W mounted on the susceptor 21. The first nozzle 61 is formed to have a length that can extend from the first nozzle operation portion 62 in the processing container 10 to the center of the processing container 10. The center of the processing container 10 coincides with the center of the susceptor 21 (substrate W), and the first nozzle 61 extends to the center of the susceptor 21. That is, the extension length of the first nozzle 61 is set to be slightly shorter than half of the diagonal line of the processing container 10, and on the other hand, longer than the radius of the susceptor 21.

[0051] The first nozzle 61 is formed, for example, as a square tube with a rectangular cross section, and has a flow path 611 inside which a gas can flow. In addition, a plurality of pipes 612 and 614 are provided at appropriate positions (for example, the upper surface) on the outer peripheral surface of the first nozzle 61 in the processing container 10. The plurality of pipes 612 and 614 extend parallel to the extension direction of the first nozzle 61 between the base end of the first nozzle 61 and the first head 63 of the first nozzle 61.

[0052] The pipe 612 has a flow path 612a extending in the axial direction, and its base end is connected to a connection pipe 613 provided on the processing container 10. The connection pipe 613 has appropriate flexibility so that the pipe 612 can move along the rotation of the first nozzle 61. The connection pipe 613 is connected to the adsorption gas supply passage 31A outside the processing container 10 through a connector provided on the processing container 10. Thus, the adsorption gas can flow from the base end of the pipe 612 to the first head 63 along the flow path 612a.

[0053] The pipe 614 has a flow path 614a extending in the axial direction, and its base end is connected to a connection pipe 615 provided on the processing container 10. The connection pipe 615 also has appropriate flexibility so that the pipe 614 can move along the rotation of the first nozzle 61. The connection pipe 615 is connected to the cleaning gas supply passage 31C outside the processing container 10 through a connector provided on the processing container 10. Thus, the cleaning gas can flow from the base end of the pipe 614 to the first head 63 along the flow path 614a.

[0054] The flow path 611 of the first nozzle 61 has a flow path cross-sectional area larger than the flow path 612a of the pipe 612 and the flow path 614a of the pipe 614. The flow path 611 allows the gas sucked in the outer peripheral portion of the first head 63 to be discharged to the branch discharge passage 421A through the support shaft 621. The base end of the first nozzle 61 is connected to the support shaft 621 of the first nozzle operation portion 62. The first nozzle 61 swings (reciprocates) the first nozzle 61 and the first head 63 in an arc shape with the support shaft 621 as the base point.

[0055] The first nozzle operation unit 62 rotates the support shaft 621 while ensuring the flow of gas in the flow path 611 of the first nozzle 61. Therefore, the first nozzle operation unit 62 includes a cover portion 622, a magnetic fluid seal portion 623, and a drive body 624 in addition to the support shaft 621.

[0056] The support shaft 621 extends in the vertical direction and is formed as a hard round tube having a flow path 621a inside. The upper end of the support shaft 621 firmly fixes the first nozzle 61 extending in the horizontal direction with a suitable fixing member. In addition, the lower end of the support shaft 621 is connected to the branch discharge passage 421A outside the processing container 10 through a connector (not shown) provided on the processing container 10. Thus, the first nozzle 61 can give a suction force (negative pressure) to the first head 63 provided on the front end of the first nozzle 61 in the order of the branch discharge passage 421A, the flow path 621a, and the flow path 611, and suck gas.

[0057] The magnetic fluid seal 623 hermetically seals the bottom wall 111 and the support shaft 621, thereby limiting the leakage of gas from the processing container 10 through the first nozzle action unit 62. In addition, the drive body 624 is equipped with a rotating motor and a drive transmission mechanism (not shown), and the support shaft 621 is rotated within a set angle range based on the rotation drive of the rotating motor. As the support shaft 621 rotates, the first nozzle 61 swings with the base end connected to the support shaft 621 as the base point. The drive body 624 is connected to the control unit 90 through a driver (not shown), and the rotation speed, rotation direction, etc. of the rotating motor are controlled under the control of the control unit 90.

[0058] The first nozzle operation unit 62 is controlled so as to repeat the operation in a range of approximately 90 degrees. Figure 1 The clockwise rotation and Figure 1 By the operation of the first nozzle operating unit 62, the first nozzle 61 swings between the first nozzle moving one end N11 provided near one side of the processing container 10 and the first nozzle moving other end N12 provided near the other side vertically connected to the one side of the processing container 10. The first nozzle moving one end N11 and the first nozzle moving other end N12 are located at a position appropriately spaced apart from the base 21 in the horizontal direction (a position not overlapping with the base 21 in the vertical direction).

[0059] like Figure 3 (A) and Figure 3 As shown in (B), the first head 63 provided at the front end of the first nozzle 61 forms a long rectangle in a direction perpendicular to the extension direction of the first nozzle 61 when viewed from above. The first head 63 forms a first processing point area PR1, which discharges the adsorbed gas toward the substrate W during film forming processing, discharges the cleaning gas toward the substrate W around the adsorbed gas, and also sucks gas outside the discharge portion of the adsorbed gas and the cleaning gas. The first head 63 reciprocates in the first circular arc path according to the swing of the first nozzle movement end N11 and the first nozzle movement end N12 of the first nozzle 61, facing the substrate W during this movement (refer to Figure 1 ).

[0060] In detail, the first head 63 has a rectangular head body 631 that is long in the tangential direction of the first arc passage, and a protrusion 632 that protrudes from the surface of the head body 631. The first nozzle 61 is directly connected to the head body 631, and the above-mentioned pipe 612 and pipe 614 are connected to the protrusion 632. In addition, the first head 63 has a processing gas exhaust part 633 that exhausts the adsorbed gas at the center of the head body 631 and the center of the protrusion 632.

[0061] The processing gas discharge part 633 is a part surrounded by the inner wall extending from the head body 631 and the protrusion 632 and the bottom wall (discharge plate 637) of the head body 631 facing the substrate W. The processing gas discharge part 633 has a discharge path 633a inside and a plurality of discharge ports 633b connected to the discharge path 633a at the bottom wall. The pipe 612 is connected to the protrusion 632 in such a way that the discharge path 633a is connected to the flow path 612a. In addition, the processing gas discharge part 633 may be provided with a heater 636 in the discharge path 633a for heating the adsorption gas supplied from the flow path 612a.

[0062] The exhaust ports 633b of the processing gas exhaust part 633 are arranged in a matrix shape and are rectangular as a whole, which is long in the tangent direction of the first arc path. Thus, the processing gas exhaust part 633 forms a rectangular adsorption gas exhaust area PR11 at the center of the first processing point area PR1. That is, the processing gas exhaust part 633 can blow the adsorption gas in a sufficiently narrow range relative to the entire area of ​​the substrate W during film formation.

[0063] Furthermore, the first head 63 has a cleaning gas discharge portion 634 for discharging cleaning gas around the processing gas discharge portion 633. The cleaning gas discharge portion 634 is a portion surrounded by the inner wall and outer wall of the protruding portion 632, the inner wall and the partition wall of the head body 631, and the bottom wall. The cleaning gas discharge portion 634 has a discharge path 634a inside, and has a plurality of discharge ports 634b connected to the discharge path 634a at the bottom wall. The pipe 614 is connected to the protruding portion 632 in such a manner that the discharge path 634a is connected to the flow path 613a.

[0064] The outlets 634b of the cleaning gas exhaust part 634 are arranged in a matrix shape similarly to the outlets 633b, and are in a square ring shape surrounding the outlets 633b of the processing gas exhaust part 633. Thus, the cleaning gas exhaust part 634 forms a square ring-shaped cleaning gas exhaust region PR12 outside the exhaust region of the adsorbed gas. The cleaning gas exhaust part 634 suppresses the adsorbed gas discharged from the processing gas exhaust part 633 from diffusing to the outside by discharging the cleaning gas during the film forming process.

[0065] In addition, the first head 63 has a gas suction part 635 for sucking gas around the cleaning gas discharge part 634. The gas suction part 635 is a part surrounded by the partition wall and the outer wall of the head body 631. The gas suction part 635 has a suction path 635a inside and a series of openings 635b connected to the suction path 635a. The first nozzle 61 and the head body 631 are connected in such a way that the suction path 635a is connected to the flow path 611.

[0066] The opening 635b is formed in a square ring shape surrounding the outer peripheral portion of the bottom wall of the head body 631. Thus, the gas suction unit 635 forms a square ring-shaped suction area PR13 outside the discharge area of ​​the cleaning gas. The gas suction unit 635 can smoothly suck the adsorption gas and the cleaning gas discharged onto the substrate W around the discharge area PR12 during the film forming process.

[0067] Back to Figure 1 and Figure 2 The second nozzle mechanism 70 is disposed at another corner ( Figure 1The second nozzle mechanism 70 discharges the reaction gas and the cleaning gas and simultaneously sucks the discharged gas. Specifically, the second nozzle mechanism 70 includes a second nozzle 71, a second nozzle operation portion 72 provided at the base end of the second nozzle 71, and a second head portion 73 provided at the protruding end (front end) of the second nozzle 71.

[0068] The second nozzle 71 is formed in a shape substantially the same as the first nozzle 61. That is, a flow path 711 is provided inside the second nozzle 71. In addition, a plurality of pipes 712 and 714 are provided at appropriate positions (e.g., the surface) of the outer peripheral surface of the second nozzle 71. The pipe 712 has a flow path 712a inside, and its base end is connected to a connecting pipe 713 provided on the processing container 10. The connecting pipe 713 is connected to a supply passage 31B for a reaction gas provided outside the processing container 10. The pipe 714 has a flow path 714a inside, and its base end is connected to a connecting pipe 715 provided on the processing container 10. The connecting pipe 715 is connected to a supply passage 31C for a cleaning gas provided outside the processing container 10.

[0069] The second nozzle action part 72 is also formed in the same manner as the first nozzle action part 62. That is, the second nozzle action part 72 includes a support shaft 721, a covering part 722, a magnetic fluid sealing part 723, and a driving body 724. The support shaft 721 is formed as a hard round tube having a flow path 721a inside. The support shaft 721 supports the second nozzle 71 at the upper end and is connected to a branch discharge passage 431A provided outside the processing container 10 at the lower end. In addition, the driving body 724 includes a rotating motor and a driving transmission mechanism not shown in the figure, and the support shaft 721 is rotated within a set angle range based on the rotation drive of the rotating motor. The driving body 724 is connected to the control unit 90 through a driver not shown in the figure, and the rotation speed, rotation direction, etc. of the rotating motor are controlled under the control of the control unit 90.

[0070] The second nozzle operation unit 72 is also controlled to repeat the clockwise and counterclockwise rotation of the support shaft 721 within a range of approximately 90 degrees. Therefore, the second nozzle 71 swings between the second nozzle movement end N21 provided near one side of the processing container 10 and the second nozzle movement end N22 provided near the other side perpendicularly connected to the one side of the processing container 10 by the operation of the second nozzle operation unit 72. The second nozzle movement end N21 and the second nozzle movement end N22 are located at a position appropriately spaced apart from the base 21 in the horizontal direction (a position that does not overlap with the base 21 in the vertical direction).

[0071] like Figure 4 (A) and Figure 4As shown in FIG. 6B , the second head 73 is also formed in the same manner as the first head 63. The second head 73 forms a second processing point region PR2, and during film forming, discharges the reaction gas toward the substrate W, discharges the cleaning gas toward the substrate W around the reaction gas, and also sucks the gas outside the discharge portion of the reaction gas and the cleaning gas. The second head 73 reciprocates in the second arc path according to the swing of the second nozzle movement end N21 and the second nozzle movement end N22 of the second nozzle 71, and faces the substrate W during the movement.

[0072] In detail, the second head 73 has a rectangular head body 731 that is long in the tangential direction of the second arc passage, and a protrusion 732 that protrudes from the surface of the head body 731, and the protrusion 732 is connected to the pipe 712 and the pipe 714. In addition, the second head 73 has a processing gas exhaust portion 733 for exhausting the reaction gas at the center of the head body 731 and the center of the protrusion 732.

[0073] The processing gas exhaust portion 733 is a portion surrounded by the inner wall extending from the head body 731 and the protrusion 732, and the bottom wall (exhaust plate) of the head body 731 facing the substrate W. The processing gas exhaust portion 733 has an exhaust path 733a inside, and also has an exhaust port 733b connected to the exhaust path 733a. The pipe 712 is connected to the protrusion 732 in such a way that the exhaust path 733a is connected to the flow path 712a. In addition, in the embodiment, the exhaust port 733b is a square connected in the length direction, but is not limited to this. The second head 73 may be a structure with multiple exhaust ports, similar to the first head 63. In addition, the processing gas exhaust portion 733 may have a heater 736 in the exhaust path 733a for heating the reaction gas supplied from the flow path 712a.

[0074] Furthermore, the processing gas exhaust portion 733 may be a structure that exhausts the reaction gas as it is (or heated) or a structure that exhausts the reaction gas in the form of plasma, depending on the requirements of the film forming process. The following specifically describes the structure of the processing gas exhaust portion 733 that exhausts the reaction gas in the form of plasma. The processing gas exhaust portion 733 has a plasma antenna 737 that surrounds the outer peripheral surface of the inner wall of the protrusion 732. The antenna 737 is connected to a high-frequency power supply portion (not shown) provided outside the processing container 10 through wiring that is not shown. The wiring extends, for example, along the outer peripheral surface of the second nozzle 71. Therefore, during the film forming process, high-frequency power is supplied from the high-frequency power supply portion to the antenna 737 through the wiring, so that the reaction gas flowing in the exhaust path 733a generates plasma.

[0075] When the reaction gas is plasmatized, a mixed gas of, for example, O2, H2, NH3, Ar, N2, etc. may be used. In addition, in order to form a high-quality oxide film, a cleaning gas containing O3 may be supplied as the cleaning gas during the generation of plasma. Thus, the processing gas discharge portion 733 may form a discharge region PR21 of the plasmatized reaction gas at the center of the second processing point region PR2 when the reaction gas is discharged.

[0076] Furthermore, the second head 73 has a cleaning gas discharge portion 734 for discharging cleaning gas around the processing gas discharge portion 733. The cleaning gas discharge portion 734 may have the same structure as the cleaning gas discharge portion 634 of the first head 63, and may have a discharge path 734a and a plurality of discharge ports 734b to form a cleaning gas discharge region PR22. In addition, the second head 73 has a gas suction portion 735 for sucking gas around the cleaning gas discharge portion 734. The gas suction portion 735 may also have the same structure as the gas suction portion 735 of the first head 63, and may have a suction path 735a and an opening 735b to form a gas suction region PR23.

[0077] Back to Figure 1 The third nozzle mechanism 80 is disposed at a corner ( Figure 1 The third nozzle mechanism 80 has the function of exhausting the cleaning gas and the washing gas and sucking the exhausted gas. In addition, the third nozzle mechanism 80 can be used in conjunction with a structure for exhausting the etching gas for etching the film of the substrate W. Specifically, the third nozzle mechanism 80 includes a third nozzle 81, a third nozzle operation portion 82 provided at the base end of the third nozzle 81, and a third head portion 83 provided at the protruding end (front end) of the third nozzle 81.

[0078] The third nozzle 81 is formed in a shape substantially the same as the first nozzle 61. That is, a flow path 811 is provided inside the third nozzle 81. In addition, a plurality of pipes 812 and 814 are provided at appropriate positions (e.g., the upper surface) of the outer peripheral surface of the third nozzle 81. The pipe 812 has a flow path 812a inside, and its base end is connected to a connecting pipe 813 provided on the processing container 10. The connecting pipe 813 is connected to a cleaning gas supply passage 31D provided outside the processing container 10. Thus, the gas supply unit 30 supplies the cleaning gas from the cleaning gas box 32D outside the processing container 10 through the cleaning gas supply passage 31D. On the other hand, the pipe 814 has a flow path 814a inside, and its base end is connected to a connecting pipe 815 provided on the processing container 10. The connecting pipe 815 is connected to a cleaning gas supply passage 31C provided outside the processing container 10.

[0079] The third nozzle action part 82 is also formed in the same manner as the first nozzle action part 62. That is, the third nozzle action part 82 includes a support shaft 821, a covering part (not shown), a magnetic fluid sealing part (not shown), and a driving body 824. The support shaft 821 is formed as a hard circular tube having a flow path 821a inside. The support shaft 821 supports the third nozzle 81 at the upper end and is connected to the third exhaust passage 44 provided outside the processing container 10 at the lower end. In addition, the driving body 824 includes a rotating motor and a driving transmission mechanism not shown in the figure, and the support shaft 821 is rotated within a set angle range based on the rotation drive of the rotating motor. The driving body 824 is connected to the control unit 90 through a driver not shown in the figure, and the rotation speed, rotation direction, etc. of the rotating motor are controlled under the control of the control unit 90.

[0080] The third nozzle operation unit 82 is configured to repeatedly rotate the support shaft 821 clockwise and counterclockwise within a range of approximately 90 degrees. That is, the third nozzle 81 can swing between the third nozzle moving one end N31 disposed near one side of the processing container 10 and the third nozzle moving other end N32 disposed near the other side perpendicularly connected to the one side of the processing container 10 through the third nozzle operation unit 82. The third nozzle moving one end N31 and the third nozzle moving other end N32 are located at a position appropriately spaced apart from the base 21 in the horizontal direction (a position not overlapping with the base 21 in the vertical direction).

[0081] like Figure 5 (A) and Figure 5 As shown in FIG. 2B , the third head 83 is formed to be substantially the same as the second head 73. During the cleaning process, the third head 83 discharges the cleaning gas toward the substrate support 20 and / or the peripheral portion of the substrate support 20, and discharges the cleaning gas toward the substrate W around the cleaning gas. Furthermore, a third processing point region PR3 for sucking the gas is formed outside the cleaning gas and the discharge portion of the cleaning gas. The third head 83 reciprocates in the range between the third nozzle movement end N31 and the third nozzle movement end N32 of the third nozzle 81, forming a third circular arc track, and faces the film forming region of the substrate support 20 during the movement.

[0082] In detail, the third head 83 has a rectangular head body 831 that is long in the tangential direction of the third arc passage, and a protrusion 832 that protrudes from the upper surface of the head body 831, and the protrusion 832 is connected to the pipe 812 and the pipe 814. In addition, the third head 83 has a processing gas exhaust part 833 that exhausts the cleaning gas in the center of the head body 831 and the center of the protrusion 832.

[0083] The processing gas discharge portion 833 is a portion surrounded by an inner wall extending from the head body 831 and the protruding portion 832, and a bottom wall of the head body 831 facing the substrate W. The processing gas discharge portion 833 has a discharge path 833a inside, and also has a discharge port 833b communicating with the discharge path 833a. The pipe 812 is connected to the protruding portion 832 in such a manner that the discharge path 833a is communicated with the flow path 812a. In addition, the processing gas discharge portion 833 may include a heater 836 in the discharge path 833a for heating the reaction gas supplied from the flow path 812a.

[0084] The processing gas exhaust part 833 discharges the cleaning gas in the form of plasma. The processing gas exhaust part 833 has a plasma antenna 837 surrounding the outer peripheral surface of the inner wall of the protrusion 832. During the cleaning process, high-frequency power is supplied to the antenna 837 from the high-frequency power supply part through wiring (not shown) to generate plasma from the cleaning gas flowing in the exhaust path 833a. In addition, the processing gas exhaust part 833 is not limited to a structure that converts the cleaning gas into plasma. For example, if the cleaning gas is activated by heat, it may also have a structure (heater 836) that only heats the cleaning gas.

[0085] Furthermore, the third head 83 includes a cleaning gas discharge portion 834 for discharging cleaning gas around the processing gas discharge portion 833. The cleaning gas discharge portion 834 may have the same structure as the cleaning gas discharge portion 634 of the first head 63, and may include a discharge path 834a and a plurality of discharge holes 834b, and may form a cleaning gas discharge region PR32 around the cleaning gas discharge region PR31. In addition, the third head 83 includes a gas suction portion 835 for sucking gas around the cleaning gas discharge portion 834. The gas suction portion 835 may also have the same structure as the gas suction portion 735 of the first head 63, and may include a suction path 835a and an opening 835b, and may form a gas suction region PR33 around the cleaning gas discharge region PR32.

[0086] Back to Figure 2 The film forming apparatus 1 further has a structure for supplying cleaning gas from the upper part (above the nozzle mechanism 50) of the processing container 10 to the lower internal space IS. For example, the top wall 121 of the upper concave container 12 has a gas introduction port 17 for introducing the cleaning gas. The gas introduction port 17 is connected to a cleaning gas box 32C storing the cleaning gas through a cleaning gas supply passage 31C having an opening and closing valve 33 and a flow regulator 34.

[0087] In addition, a shower head 18 may be provided in the upper concave container 12 to diffuse the cleaning gas introduced from the gas introduction port 17 in the horizontal direction. The shower head 18 is formed in a flat plate shape with a plurality of gas holes 18a, and the cleaning gas supplied to the space between the shower head 18 and the top wall 121 is uniformly discharged to the space below the shower head 18 (the space having the substrate W and the nozzle mechanism 50).

[0088] The control unit 90 controls the film forming apparatus 1 as follows: Figure 1 As shown, a computer having a processor 91, a memory 92, an input / output interface (not shown), etc. can be used. The processor 91 is one or a combination of multiple CPUs (central processing unit), GPUs (graphics processing unit), ASICs (application integrated circuits), FPGAs (field programmable gate arrays), circuits composed of multiple discrete semiconductors, etc. The memory 92 includes a main storage device composed of a semiconductor memory, etc. and an auxiliary storage device composed of a magnetic disk, a semiconductor memory (flash memory), etc.

[0089] The memory 92 stores programs for operating the film forming apparatus 1 and recipes for process conditions of the film forming process, etc. The processor 91 reads out and executes the programs in the memory 92, thereby controlling each component of the film forming apparatus 1. In addition, the control unit 90 may be composed of a host computer or a plurality of client computers that perform information communication via a network.

[0090] The control unit 90 controls each structure of the film forming apparatus 1 to form a desired film on the substrate W held on the substrate support unit 20. At this time, the control unit 90 controls the operation of the first nozzle operation unit 62 to swing the first nozzle 61 in a direction parallel to the surface of the substrate W. In addition, the control unit 90 controls the operation of the second nozzle operation unit 72 to swing the second nozzle 71 in a direction parallel to the surface of the substrate W. Further, the control unit 90 controls the operation of the third nozzle operation unit 82 to swing the third nozzle 81 in a direction parallel to the surface of the substrate W. Here, the control unit 90 operates the third nozzle mechanism 80 in the cleaning process after the film forming process based on the first nozzle mechanism 60 and the second nozzle mechanism 70.

[0091] During the film forming process, the first head 63 reciprocates on the first circular arc track based on the swing of the first nozzle 61. The second head 73 reciprocates on the second circular arc track based on the swing of the second nozzle. The first circular arc track and the second circular arc track intersect at the center of the base 21 (substrate W). For example, the control unit 90 makes the swing speed of the first nozzle 61 and the swing speed of the second nozzle 71 the same, and on the other hand, controls the start timing of the swing of the first nozzle 61 and the start timing of the swing of the second nozzle 71 to be staggered. As a result, the film forming device 1 avoids interference between the first head 63 and the second head 73, and can stably repeat the reciprocating movement of the first head 63 and the reciprocating movement of the second head 73.

[0092] The control unit 90 operates the gas supply unit 30 and the gas exhaust unit 40 simultaneously with the reciprocating movement of the first nozzle mechanism 60 and the reciprocating movement of the second nozzle mechanism 70 to supply film-forming gas (adsorption gas, reaction gas) and to suck gas using the nozzle mechanism unit 50 .

[0093] The discharge port 633b of the first head 63 moves along the first arc track. Figure 3 As shown in FIG. 1A , an adsorbed gas discharge area PR11 is formed on the lower side in the vertical direction, so that the rotating substrate W adsorbs the adsorbed gas. Furthermore, the first head 63 forms a cleaning gas discharge area PR12 around the adsorbed gas discharge area PR11, thereby suppressing the diffusion of the adsorbed gas and making it easy to control the adsorbed gas discharge area PR11. In addition, the first head 63 can reduce the residual adsorbed gas near the surface of the substrate W by sucking gas in the suction area PR13 outside the discharge area PR12, and can suppress the adhesion of the adsorbed gas to the position other than the first processing point area PR1 of the substrate W.

[0094] On the other hand, the discharge port 733b of the second head 73 moves along the second arc track. Figure 4 As shown in (A), a discharge area PR21 of the reaction gas is formed on the lower side in the vertical direction, and the plasma-formed reaction gas is discharged on the rotating substrate W. Furthermore, the second head 73 forms a discharge area PR22 of the cleaning gas around the discharge area PR21 of the reaction gas, thereby suppressing the diffusion of the reaction gas and making it easy to control the discharge area PR21 of the reaction gas. In addition, the second head 73 can reduce the residual reaction gas near the surface of the substrate W by sucking the gas in the suction area PR23 outside the discharge area PR22, and suppress the reaction of the reaction gas at the position other than the second processing point area PR2 of the substrate W.

[0095] In addition, if Figure 6As shown, the film forming apparatus 1 can control the change of the moving speed of the first nozzle mechanism 60 and the moving speed of the second nozzle mechanism 70 (or the moving speed of the third nozzle mechanism 80). Hereinafter, the swinging motion of the first nozzle mechanism 60 will be described representatively, and the description of the second nozzle mechanism 70 and the third nozzle mechanism 80 that perform the same swinging motion will be omitted.

[0096] When the radial interval is equally divided into a plurality of sections from the center of the substrate W toward the radial outside, the surface area of ​​each section is smaller on the center side and larger on the outer edge side. Figure 5 In the embodiment, the surface of the substrate W is divided into three sections (hereinafter, the divided sections are referred to as the first section R1 to the third section R3 from the center to the outer edge of the substrate W). In addition, the number of divided sections is not limited to three, and may be two or more than four.

[0097] The first section R1 is in the shape of a perfect circle at the center of the substrate W. The second section R2 is adjacent to the outer side of the first section R1 and is in the shape of a ring surrounding the first section R1. In addition, the third section R3 is also adjacent to the outer side of the second section R2 and is in the shape of a ring surrounding the second section R2. At this time, the relationship between the surface areas of the sections is that the first section R1 < the second section R2 < the third section R3. Therefore, in the film forming method, more film forming gas is supplied to the third section R3 side of the rotating substrate W, and on the other hand, less film forming gas is supplied to the first section R1 side of the rotating substrate W, thereby achieving in-plane uniformity of film formation.

[0098] Specifically, the control unit 90 makes the discharge ports 633b and 733b of the nozzle mechanism unit 50 face the third zone R3 (outer edge side) for a longer time than the first zone R1 (center side), thereby increasing the supply amount of the film forming gas in the third zone R3. That is, the control unit 90 controls the swinging motion of the first nozzle mechanism 60, the second nozzle mechanism 70, and the third nozzle mechanism 80 so that the moving speed Vr1 of the first zone R1> the moving speed Vr2 of the second zone R2> the moving speed Vr3 of the third zone R3. Thus, the film thickness of the film formed on the surface of the substrate W can be appropriately adjusted.

[0099] Here, the nozzle mechanism unit 50 moves the first nozzle mechanism 60 within the range of the first nozzle movement end N11 and the first nozzle movement end N12, and simultaneously moves the second nozzle mechanism 70 within the range of the second nozzle movement end N21 and the second nozzle movement end N22, so as to form a film on the substrate W. Figure 7 As shown in the above figure, the film forming apparatus 1 forms a film not only on the surface of the substrate W but also on the outer periphery of the susceptor 21 of the substrate support 20 and the peripheral portion of the susceptor 21 during the film forming process. As an example of the peripheral portion of the susceptor 21, a protective plate 141 covering the temperature regulating portion 14 can be cited.

[0100] When the substrate W after the film forming process is taken out from the substrate support portion 20, the film forming apparatus 1 Figure 7 As shown in the middle figure, it is a state where the film remains only on the outer periphery of the substrate support part 20 and / or the peripheral part of the substrate support part 20. Hereinafter, the film formed on the substrate support part 20 itself and / or the peripheral part of the substrate support part 20 is referred to as a cleaning object film CB. For example, the cleaning object film CB is formed on the upper surface of the protruding portion on the outer periphery of the concave base 21, the two side surfaces, and the upper surface of the protective plate 141. The film forming device 1 performs a cleaning process after the film forming process in order to remove the cleaning object film CB.

[0101] Here, the substrate support part 20 forms the cleaning film CB on the outer periphery of the base 21, while the cleaning film CB is hardly formed on the position of the mounting surface 21a where the substrate W is mounted (inside the outer periphery of the base 21). Figure 7 As shown in the following figure, when a general cleaning process is performed in which a plasma-generated cleaning gas is supplied to the entire surface of the susceptor 21, there is a possibility that the susceptor 21 is damaged by excessive etching due to the cleaning gas.

[0102] Therefore, the film forming apparatus 1 according to the embodiment performs the cleaning process by limiting the reciprocating motion range of the third nozzle mechanism 80 during the cleaning process. Figure 8 and Fig. 9 Provide explanation.

[0103] Film forming device 1, such as Figure 8 and Fig. 9 As shown in (A), the third nozzle mechanism 80 can be reciprocated in the range of motion from the outer edge of the substrate support part 20 to the center 20o of the substrate support part 20 under the control of the control unit 90. In other words, the discharge port 833b of the third nozzle mechanism 80 reciprocates in the range of motion narrower than the diameter of the substrate support part 20 on the outer edge side of the substrate support part 20. As a result, the discharge port 833b of the third nozzle mechanism 80 faces the substrate support part 20 with a restricted range of motion for a long time. Each discharge port 833b supplies a large amount of cleaning gas to the position facing for a long time. As a result, the film forming apparatus 1 can increase the removal amount of the position where the cleaning object film CB remains (the film forming area of ​​the substrate support part 20 and / or its peripheral part), and on the other hand, can reduce the removal amount of the central part of the substrate support part 20. Hereinafter, cleaning in which the range of motion of the third nozzle mechanism 80 is restricted is also referred to as partial cleaning processing.

[0104] In the partial cleaning process, the following discharge conditions are set, and the thicker the film thickness of the cleaning object film CB is, the longer the time it faces the discharge port 833b of the third nozzle mechanism 80. As a result, more cleaning gas can be supplied to the position where the cleaning object film CB is thicker, and the cleaning object film CB can be stably removed. On the other hand, the position where the film thickness of the cleaning object film CB is thin is not made to face the third nozzle mechanism 80 (or it is made to face it only for a short time), thereby suppressing over-etching. In addition, when performing the partial cleaning process, the swing speed of the third nozzle 81 can be changed in multiple intervals on the substrate support part 20. In this way, for example, the speed of the third nozzle 81 can be suppressed from slowing down at the end of the reciprocating movement on the center side of the substrate support part 20, and the removal of other parts can be promoted.

[0105] In addition, the control unit 90 may gradually reduce the reciprocating range of the third nozzle mechanism 80 during the partial cleaning process. For example, the control unit 90 moves the reciprocating end of the third nozzle 81 on the center side of the substrate support 20 toward the outer edge side of the substrate support 20 as the time of the partial cleaning process passes. As a result, the film forming apparatus 1 hardly cleans the center side of the substrate support 20, and can gradually remove the outer peripheral portion of the substrate support 20 and / or the cleaning target film CB around it.

[0106] Furthermore, the film forming device 1 is preferably as follows Fig. 9 As shown in (B), after the cleaning object film CB is removed in the cleaning method, the cleaning gas is blown onto the entire mounting surface 21a of the susceptor 21, and at the same time, a cleaning step of sucking the gas is performed. In other words, in the cleaning method, a cleaning step of partially cleaning the outer periphery of the substrate support part 20 and / or the peripheral part of the substrate support part 20 and a cleaning step of cleaning the surface of the substrate support part 20 are sequentially performed. For example, in the cleaning step, the film forming apparatus 1 sets the reciprocating movement range of the third nozzle mechanism 80 to a position that passes through the center of the substrate support part 20 and does not reach the outer edge of the substrate support part 20. As a result, the residue of the cleaning object film CB generated by cleaning does not fly in the processing container 10, but can be discharged from the third nozzle mechanism 80. In addition, in the cleaning step, the film forming apparatus 1 can move the third nozzle mechanism 80 to the outside of the outer edge of the susceptor 21 (the protruding part of the outer edge of the susceptor 21, above the protective plate 141) to perform the blowing of the cleaning gas and the suction of the gas.

[0107] [Film forming method]

[0108] Hereinafter, regarding the film forming method including the cleaning method according to the embodiment, refer to Fig.10The film forming apparatus 1 performs the film forming process and the cleaning process (cleaning method) of the substrate W in sequence after performing the preparatory process for film forming. The film forming method performs steps S101 to S106 as the film forming process and steps S108 to S114 as the cleaning process under the control of the control unit 90.

[0109] More specifically, the film forming apparatus 1 executes the following operations under the control of the control unit 90: Fig.10 The control unit 90 first adjusts the internal pressure of the processing container 10 to the target pressure after placing the substrate W on the susceptor 21 of the substrate support unit 20 (step S101). The control unit 90 supplies the cleaning gas from the upper part of the processing container 10 through the gas supply unit 30, and exhausts the internal gas through the gas exhaust unit 40. Thus, the control unit 90 adjusts the internal pressure of the processing container 10 to the target pressure set in the range of 1 Torr to 10 Torr, for example.

[0110] Furthermore, the control unit 90 operates the temperature control unit 14 in the processing container 10 to adjust the temperature of the substrate W placed on the susceptor 21 to a target temperature (step S102). The control unit 90 adjusts the temperature of the substrate W to a target temperature set within a range of about 100°C to 800°C, for example.

[0111] Then, the control unit 90 operates the substrate rotation operation unit 23 of the substrate support unit 20 to rotate the susceptor 21 at a target speed (step S103). The control unit 90 rotates the susceptor 21 at a target speed set, for example, in the range of 10 rpm to 1000 rpm. As a result, the substrate W held on the susceptor 21 also rotates (rotates) with its center as the base point.

[0112] When the internal pressure of the processing container 10, the temperature of the substrate W, the rotation speed of the substrate W, etc. are stable, the control unit 90 ends the preliminary preparation and starts the film forming process. The control unit 90 causes the first head 63 of the first nozzle mechanism 60 and the second head 73 of the second nozzle mechanism 70 to swing within an appropriate range of motion (step S104). As a result, the first head 63 and the second head 73 swing above the substrate W and face the entire surface of the substrate W. At this time, the control unit 90 causes the timing of the swing of the first head 63 and the swing of the second head 73 to stagger the movements to avoid interference between the first head 63 and the second head 73.

[0113] Furthermore, the control unit 90 operates the gas supply unit 30 and the gas exhaust unit 40 simultaneously with the operation of the nozzle mechanism unit 50, and starts supplying the film forming gas (adsorbed gas, reactive gas) and sucking the gas using the nozzle mechanism unit 50 (step S105). In addition, there is no particular restriction on the operation timing of the gas supply unit 30 and the gas exhaust unit 40, and the operation can be performed before or after the reciprocating movement of the first nozzle 61 and the second nozzle 71. As a result, the adsorbed gas is adsorbed on the surface of the substrate W, and the reactive gas can react with the adsorbed gas. Therefore, a film based on the adsorbed gas and the reactive gas is formed on the entire surface of the substrate W.

[0114] Furthermore, the control unit 90 monitors whether the film forming process is completed during the film forming process (step S106). For example, the control unit 90 compares the target time of the film forming process set in the plan (or the processing time set according to the target film thickness, etc.) and the actual operation time of the nozzle mechanism unit 50, and determines the completion of the film forming process based on the actual operation time reaching the target time. In addition, the film forming apparatus 1 is equipped with a film thickness measuring device (not shown) for measuring the film thickness in the processing container 10, and the completion of the first film forming process can be determined based on the measured film thickness.

[0115] Then, the control unit 90 stops the rotation of the substrate support unit 20, stops the gas supply unit 30, stops the gas discharge unit 40, and stops the operation of the nozzle mechanism unit 50, and carries out the substrate W formed by the film forming step from the processing container 10 (step S107). Thus, the substrate support unit 20 is exposed in the processing container 10.

[0116] Then, the control unit 90 determines whether to perform the cleaning process (step S108). As described above, in the film forming process, the cleaning target film CB is formed on the substrate support unit 20. The state (thickness, etc.) of the cleaning target film CB can be known in advance by performing experiments, simulations, etc. in advance.

[0117] When the control unit 90 executes the film forming process for the number of times set in the plan, it determines that the cleaning process is implemented (step S108: Yes), and proceeds to step S109. On the other hand, when the number of times set in the film forming process is not reached, it determines that the cleaning process is not implemented (step S107: No), and the subsequent steps S109 to S114 are not performed, and the processing ends. In addition, the film forming apparatus 1 may execute the cleaning process after each film forming process.

[0118] In step S109, as a cleaning process, the control unit 90 sets the operating range of the third nozzle mechanism 80 to the outer periphery of the substrate support unit 20 and / or the peripheral portion of the substrate support unit 20, and swings the third head 83. Figure 8As shown in FIG. 1 , the range of each movement of the third head 83 is reduced to a range from the outer edge of the substrate W to a range not reaching the center of the substrate W. In addition, at this time, the control unit 90 rotates the substrate support unit 20 at a specified speed. Furthermore, the control unit 90 stops the first nozzle mechanism 60 and the second nozzle mechanism 70 from swinging and stops the discharge of the film forming gas. The control unit 90 can control the temperature adjustment unit 14 to adjust the substrate support unit 20 to a temperature suitable for the cleaning process.

[0119] Furthermore, in step S110, the control unit 90 operates the gas supply unit 30 and the gas exhaust unit 40 to start supplying and sucking the cleaning gas to the rotating substrate support unit 20, thereby performing a cleaning step. As a result, the film forming apparatus 1 can remove the cleaning target film CB along the circumferential direction of the outer peripheral portion of the substrate support unit 20 and / or the peripheral portion of the substrate support unit 20.

[0120] During the execution of the cleaning step, the control unit 90 monitors whether the cleaning step is terminated (step S111). For example, the control unit 90 compares the target time of the cleaning step set in the plan or the like (or the processing time set according to the film thickness of the cleaning object film CB, etc.) and the actual operation time of the third nozzle mechanism 80, and determines the end of the cleaning step based on the actual operation time reaching the target time. The target time of the cleaning step can be set by conducting experiments or simulations in advance with respect to the film thickness of the cleaning object film CB formed in the film forming process.

[0121] Next, in order to perform the cleaning step, the control unit 90 sets the reciprocating range of the third nozzle mechanism 80 to the mounting surface 21a of the substrate support unit 20, and swings the third head 83 (step S113). At this time, the control unit 90 stops the discharge of the cleaning gas, while continuing the rotation of the substrate support unit 20.

[0122] Then, the control unit 90 operates the gas supply unit 30 and the gas exhaust unit 40 to perform the blowing of the cleaning gas and the suction of the gas (step S114). The discharge amount of the cleaning gas in the cleaning step is preferably greater than the discharge amount of the cleaning gas in the cleaning step. Thus, the film forming apparatus 1 can blow away the residue of the cleaning target film CB on the mounting surface 21a of the substrate support unit 20 while suctioning with the third nozzle mechanism 80, thereby significantly reducing the particles in the processing container 10.

[0123] During the execution of the cleaning step, the control unit 90 monitors whether the cleaning step is completed (step S114). For example, the control unit 90 compares the target time of the cleaning step set in the scheme and the actual operation time of the third nozzle mechanism 80, and determines the completion of the cleaning step based on whether the actual operation time reaches the target time.

[0124] If the cleaning step is completed, the control unit 90 ends the film forming method including the cleaning method. Through the above processing flow, the film forming apparatus 1 can fully remove the cleaning target film CB of the substrate support part 20 and / or the peripheral part of the substrate support part 20. Therefore, when the film forming apparatus 1 places the next substrate W on the substrate support part 20, it can prevent particles from adhering to the substrate W, thereby improving the quality of the film formed on the substrate W.

[0125] In addition, the cleaning method and the film forming apparatus 1 according to the embodiment are not limited to the above-mentioned embodiment, and various modifications are possible. For example, in the cleaning method and the film forming apparatus 1 according to the above-mentioned embodiment, the third nozzle mechanism 80 is swung to discharge the cleaning gas from the third nozzle mechanism 80. However, the cleaning method and the film forming apparatus 1 may also be configured to discharge the cleaning gas toward the substrate support 20 or to suck the gas using the first nozzle mechanism 60 and the second nozzle mechanism 70 (swung).

[0126] In addition, in the cleaning method according to the above-mentioned embodiment, as the exhaust condition of the cleaning gas in the cleaning step, the range of the reciprocating movement of the third nozzle mechanism 80 is narrower than the movement limit of the third nozzle mechanism 80. However, the present invention is not limited to this, and the cleaning method may change the exhaust condition of the cleaning gas as follows: for a location with a thicker film thickness, the time for which the third nozzle mechanism 80 faces the substrate support part 20 is increased, or the exhaust amount of the cleaning gas supplied to the substrate support part 20 is increased. That is, in the cleaning process, the exhaust condition (the movement of the third nozzle mechanism 80, the rotation speed of the substrate W side, the exhaust amount of the cleaning gas, etc.) for reducing the thicker film thickness of the cleaning target film CB may be set. In this way, the cleaning method can suppress damage to the substrate support part 20 and appropriately remove the cleaning target film CB.

[0127] Furthermore, the film forming apparatus 1 according to the above-mentioned embodiment is described as a device in which the first nozzle mechanism 60, the second nozzle mechanism 70, and the third nozzle mechanism 80 are relatively moved (swung) with respect to the substrate W. Without being limited thereto, the film forming apparatus 1 may also be a structure in which the nozzle mechanism part for supplying the film forming gas and the cleaning gas is fixed, and the substrate supporting part 20 for supporting the substrate W is relatively moved with respect to the nozzle. Fig.11 An example of the film forming apparatus 1A at this time is shown.

[0128] like Fig.11 The film forming apparatus 1A according to the modified example shown includes a processing container 1010, a substrate support unit 1020, a gas supply unit 1030, a gas exhaust unit 1040, and a nozzle mechanism unit 1050. Fig.11 For the sake of convenience, the top plate of the processing container 1010 is omitted.

[0129] The processing container 1010 is formed of quartz or the like, and accommodates a plurality of substrates W. In addition, it has an internal space that can be decompressed. The processing container 1010 has a perfect circular shape when viewed from above, and is formed into a cylindrical shape having a vertical length shorter than a horizontal diameter. The processing container 1010 has a side port 1112a on the side wall 1112, through which the transport device 2 that transports the substrate W enters and retreats. In addition, a gate valve 1015 for opening and closing the side port 1112a is provided on the side wall 1112.

[0130] The substrate support part 1020 holds a plurality of (4 in FIG. 13 ) substrates W accommodated in the processing container 1010 so as to be revolvable and rotatable. Therefore, the substrate support part 1020 has a rotating table 1021 and a plurality of (4) mounting tables 1022 that respectively support each substrate W on the surface of the outer peripheral portion of the rotating table 1021. The four mounting tables 1022 are arranged at the same distance (radial position) from the center of the rotating table 1021, and are also arranged at equal intervals in the circumferential direction (i.e., each is 90° apart). In addition, the substrate support part 1020 causes the rotating table 1021 to reciprocate in the circumferential direction. For example, the following action is performed: the substrate support part 1020 causes the rotating table 1021 to press Fig.11 After rotating the rotating table 1021 by 90° clockwise, Fig.11 Rotate 90° counterclockwise.

[0131] The gas supply unit 1030 has a plurality of supply passages (not shown) through which film forming gas (adsorbed gas, reactive gas), cleaning gas, and purge gas flow outside the processing container 1010, and supplies the gas into the processing container 1010 through the respective supply passages. The gas exhaust unit 1040 has a plurality of exhaust passages (not shown) through which gas (reacted gas, unreacted gas, cleaning gas, and the like) flows outside the processing container 1010, and exhausts the gas supplied into the processing container 1010 through the respective exhaust passages.

[0132] Furthermore, the nozzle mechanism 1050 discharges the film forming gas and the cleaning gas toward the surface (surface) of each substrate W at an appropriate position in the processing container 1010, and simultaneously sucks the gas above the substrate W. The nozzle mechanism 1050 includes a first nozzle 1060 for discharging the adsorption gas and the cleaning gas, a second nozzle 1070 for discharging the reaction gas and the cleaning gas, and a third nozzle 1080 for discharging the cleaning gas and the cleaning gas. Four of each of the first nozzle 1060, the second nozzle 1070, and the third nozzle 1080 are provided in the processing container 1010.

[0133] The first nozzle 1060 and the second nozzle 1070 are each fixed to four partition wall members 1122. For example, each partition wall member 1122 is Figure 1The first nozzle 1060 is held on the counterclockwise side of the Figure 1 In other words, one first nozzle 1060 and one second nozzle 1070 are arranged in each of the first to fourth quadrants Q1 to Q4 partitioned by the partition wall members 1122 .

[0134] On the other hand, the third nozzle 1080 is disposed at an intermediate position between the first quadrant Q1 to the fourth quadrant Q4 spaced apart from the first nozzle 1060 and the second nozzle 1070 , and is fixed to the ceiling of the processing container 1010 .

[0135] The first nozzle 1060, the second nozzle 1070, and the third nozzle 1080 each penetrate the top plate of the processing container 1010, and are connected to the gas supply part 1030 and the gas exhaust part 40 on the outside of the processing container 1010. In addition, the first nozzle 1060 and the second nozzle 1070 discharge and suck the gas on the vertical lower side of the processing container 1010. The structure for discharging and sucking the adsorbed gas in the first nozzle 1060 is substantially the same as the structure of the first head 63 involved in the embodiment. The process of discharging and sucking the reaction gas in the second nozzle 1070 is substantially the same as the structure of the second head 73 involved in the embodiment. The structure for discharging and sucking the etching gas in the third nozzle 1080 is substantially the same as the third head 83 involved in the embodiment. As a result, a first processing point area PR1 is formed on the vertical lower side of the first nozzle 1060 (refer to Figure 3 (A)). A second processing point area is formed on the lower side of the second nozzle 1070 in the vertical direction (see Figure 4 (A)). A third processing point area is formed on the vertical lower side of the third nozzle 1080 (see Figure 5 (A)).

[0136] Furthermore, the center of the first nozzle 1060, the center of the second nozzle 1070, and the center of the third nozzle 1080 face the center of each mounting table 1022 provided on the rotating table 1021. Thus, the first nozzle 1060, the second nozzle 1070, and the third nozzle 1080 pass through the center of each mounting table 1022 on the vertical upper side of the substrate W mounted on the mounting table 1022 as the rotating table 1021 rotates. Furthermore, during the film forming process or the cleaning process, each mounting table 1022 rotates, so that as a result, the first nozzle 1060, the second nozzle 1070, and the third nozzle 1080 can face the entire surface of the substrate W (mounting table 1022).

[0137] The control unit 1090 of the film forming apparatus 1A causes the rotating table surface 1021 to reciprocate clockwise and counterclockwise while causing each mounting table 1022 to rotate (rotate), thereby performing a film forming method on the substrate W on each mounting table 1022. That is, in the film forming method, each substrate W is relatively moved with respect to the fixed first nozzle 1060, the second nozzle 1070, and the third nozzle 1080, thereby performing film formation on the surface of the substrate W.

[0138] Furthermore, the control unit 1090 is connected with Fig.10 The process flow of the film forming method shown in the figure is similar, and the film forming process and the cleaning process (cleaning method) are performed. That is, in the film forming process, the rotating table 1021 is reciprocated clockwise and counterclockwise within a range of 90 degrees, thereby performing an overall film forming process on the entire surface of the substrate W through the first nozzle 1060 and the second nozzle 1070. In the cleaning process, the clockwise and counterclockwise reciprocating range of the rotating table 1021 is reduced, and it is reciprocated, thereby performing a partial cleaning process on the outer periphery and / or its peripheral part of each mounting table 1022 through the third nozzle 1080. Thus, the cleaning method and the film forming apparatus 1A can stably remove the cleaning object film CB formed on the substrate support part 20 and the like during film formation.

[0139] The technical idea and effects of the present invention described in the above embodiments are described below.

[0140] The first embodiment of the present invention is a method for cleaning the interior of a cleaning processing container 10, comprising a step (A) of carrying out a substrate W to be subjected to film forming processing from the interior of the processing container 10, and a step (B) of cleaning a substrate support portion 20 supporting the substrate W and / or a peripheral portion of the substrate support portion 20 in the processing container 10 after the step (A). In the step (B), while rotating the substrate support portion 20, the substrate support portion 20 or the nozzle mechanism portion 50 is relatively moved in a manner such that the discharge port 833b of the nozzle mechanism portion 50 passes through the center of the substrate support portion 20, and a cleaning gas is discharged from the discharge port 833b of the nozzle mechanism portion 50 toward the substrate support portion 20 and / or a peripheral portion of the substrate support portion 20, thereby partially cleaning the film forming area of ​​the substrate support portion 20 and / or a peripheral portion of the substrate support portion 20.

[0141] According to the above, the cleaning method can perform cleaning in a narrow range in the film forming area of ​​the substrate support part 20 and / or the peripheral part of the substrate support part 20. Therefore, the cleaning method can stably remove the film (cleaning target film CB) formed on the peripheral part of the substrate support part 20 during the film forming process. As a result, the cleaning method can suppress damage (over-etching) to the position of the substrate support part 20 supporting the substrate W. Therefore, the film forming apparatus 1 can suppress the generation of particles in the processing container 10, etc., and improve the quality of film formation.

[0142] In addition, the exhaust condition is set such that the time facing the exhaust port 833b in the step (B) is longer at a location where the film thickness of the film (cleaning target film CB) formed on the substrate support portion 20 and / or the peripheral portion of the substrate support portion 20 is thicker. Thus, the cleaning method can supply more cleaning gas at a location where the film thickness is thicker to remove the film, and the cleaning accuracy can be further improved.

[0143] In addition, in the step (B), the range of motion for relatively moving the substrate support unit 20 or the nozzle mechanism unit 50 is set such that the discharge port 833b passes through the outer edge of the substrate support unit 20, but does not reach the center of the substrate support unit 20. Thus, the cleaning method can remove the cleaning target film CB by making the discharge port 833b face the outer peripheral portion of the substrate support unit 20 where film is easily formed for a long time.

[0144] In addition, in the step (B), the range of motion in which the substrate support unit 20 or the nozzle mechanism unit 50 is relatively moved is gradually reduced over time. Thus, in the cleaning method, the cleaning gas can be supplied by focusing on a narrow range of motion, and the removal of a portion of the film on the substrate support unit 20 and / or the peripheral portion of the substrate support unit 20 can be performed stably.

[0145] In addition, the process (B) is sequentially performed as follows: step (B-1), while rotating the substrate support part 20, the substrate support part 20 or the nozzle mechanism part 50 is relatively moved, and a cleaning gas is supplied to the substrate support part 20 and / or the peripheral part of the substrate support part 20 for cleaning; step (B-2), while rotating the substrate support part 20, the substrate support part 20 or the nozzle mechanism part 50 is relatively moved, and a cleaning gas is supplied to the substrate support part 20 and / or the peripheral part of the substrate support part 20, and gas is sucked around the cleaning gas. Thus, the cleaning method can remove the cleaning target film CB by the cleaning gas, and then remove the residue remaining on the substrate support part 20 by blowing away the cleaning gas while sucking it out.

[0146] In addition, in the step (B-2), the range of motion for relatively moving the substrate support unit 20 or the nozzle mechanism unit 50 is set such that the discharge port 833b passes through the center of the substrate support unit 20 but does not reach the outer edge of the substrate support unit 20. Thus, the cleaning method can effectively remove particles on the mounting surface 21a on which the substrate W is mounted on the substrate support unit 20.

[0147] In addition, in the step (B), the speed at which the substrate support 20 or the nozzle mechanism 50 is relatively moved is changed based on the position of the substrate support 20 facing the discharge port 833b. Thus, for example, the cleaning method can respond to factors such as a large surface area on the outer edge side of the substrate support 20 by changing the speed at which the cleaning target film CB is relatively moved, and the cleaning target film CB can be removed more stably.

[0148] In addition, the nozzle mechanism unit 50 includes a first nozzle mechanism 60 and a second nozzle mechanism 70 for discharging a film forming gas toward the substrate W, and a third nozzle mechanism 80 for discharging a cleaning gas toward the substrate support unit 20. During the film forming process, the first nozzle mechanism 60 and the second nozzle mechanism 70 are independently swung while the substrate W is rotated, and a film is formed on the substrate W. In the (B) step, only the third nozzle mechanism 80 is swung while the substrate support unit 20 is rotated. Thus, the cleaning method can easily swing the third nozzle mechanism 80 to supply the cleaning gas to the substrate W.

[0149] In addition, the first nozzle mechanism 60 includes a first nozzle 61 extending inside the processing container 10, a first nozzle operating portion 62 provided at the base end of the first nozzle 61 and causing the first nozzle 61 to swing, and a first head portion 63 provided at the front end of the first nozzle 61 and discharging the adsorbed gas as a film-forming gas. The second nozzle mechanism 70 includes a second nozzle 71 extending inside the processing container 10, a second nozzle operating portion 72 provided at the base end of the second nozzle 71 and causing the second nozzle 71 to swing, and a second head portion 73 provided at the front end of the second nozzle 71 and discharging a reaction gas obtained by reacting with the adsorbed gas as a film-forming gas. The third nozzle mechanism 80 includes a third nozzle 81 extending inside the processing container 10, a third nozzle operating portion 82 provided at the base end of the third nozzle 81 and causing the third nozzle 81 to swing, and a third head portion 83 provided at the front end of the third nozzle 81 and discharging a cleaning gas. Thus, the cleaning method can supply the adsorption gas and the reaction gas to a fixed point on the surface of the substrate W, and can also supply the cleaning gas to a fixed point on the surface of the substrate support part 20 .

[0150] In addition, the film forming device 1, 1A of the present invention is for forming a film on a substrate W, including a processing container 10 for accommodating the substrate W, a substrate support unit 20 for supporting the substrate W in the processing container 10 and rotating the substrate W, a nozzle mechanism unit 50 for discharging a film forming gas and a cleaning gas toward the substrate W supported by the substrate support unit 20, and a control unit 90 for controlling the operation of the substrate support unit 20 and the nozzle mechanism unit 50. The control unit 90 controls, in step (A), to carry out the substrate W to be subjected to film forming processing from the interior of the processing container 10, and in step (B), to perform the film forming process in step (A). After the process, the substrate support part 20 and / or the peripheral part of the substrate support part 20 are cleaned. In the process (B), while the substrate support part 20 is rotated, the substrate support part 20 or the nozzle mechanism part 50 is relatively moved in a manner that the discharge port 833b of the nozzle mechanism part 50 passes through the center of the substrate support part 20, and the cleaning gas is discharged from the discharge port 833b of the nozzle mechanism part 50 to the substrate support part 20 and / or the peripheral part of the substrate support part 20, thereby partially cleaning the film forming area of ​​the substrate support part 20 and / or the peripheral part of the substrate support part 20. At this time, the film forming apparatus 1 can stably remove the film formed on the substrate support part 20 and the like during film formation.

[0151] The cleaning method and film forming apparatus 1, 1A involved in the embodiments disclosed herein are exemplary and non-restrictive in all respects. The embodiments may be modified and improved in various ways without departing from the appended claims and their gist. The matters described in the above-mentioned multiple embodiments may also be other structures within the scope of non-contradiction, and may be combined within the scope of non-contradiction.

Claims

1. A cleaning method is a cleaning method for cleaning the interior of a processing container, comprising: (A) step of carrying out the substrate subjected to the film forming process from the interior of the processing container, (B) step of cleaning a substrate support portion supporting the substrate and / or a peripheral portion of the substrate support portion within the processing container after the (A) step, In the process (B), while the substrate supporting part is rotated, the substrate supporting part or the nozzle mechanism part is relatively moved in such a manner that the discharge port of the nozzle mechanism part passes through the center of the substrate supporting part, and a cleaning gas is discharged from the discharge port of the nozzle mechanism part toward the substrate supporting part and / or the peripheral part of the substrate supporting part, thereby partially cleaning the film forming area of ​​the substrate supporting part and / or the peripheral part of the substrate supporting part.

2. The cleaning method according to claim 1, wherein the following discharge conditions are set: the thicker the film formed on the substrate supporting portion and / or the peripheral portion of the substrate supporting portion, the longer the time the location faces the discharge port in the (B) step.

3. The cleaning method according to claim 2, wherein in the step (B), the range of motion for relatively moving the substrate support portion or the nozzle mechanism portion is set to a range in which the discharge port passes through the outer edge of the substrate support portion but does not reach the center of the substrate support portion. 4 . The cleaning method according to claim 3 , wherein in the step (B), the range of motion of the substrate supporting portion or the nozzle mechanism portion for relative movement is gradually reduced over time.

5. The cleaning method according to any one of claims 1 to 4, wherein the step (B) is performed in sequence: (B-1) step, while rotating the substrate support part, relatively moving the substrate support part or the nozzle mechanism part, supplying the cleaning gas to the substrate support part and / or the peripheral part of the substrate support part for cleaning, In step (B-2), the substrate supporting part or the nozzle mechanism part is relatively moved while the substrate supporting part is rotated, a cleaning gas is supplied to the substrate supporting part and / or a peripheral portion of the substrate supporting part, and a gas is sucked around the cleaning gas.

6. The cleaning method according to claim 5, wherein in the step (B-2), the range of motion for relatively moving the substrate support portion or the nozzle mechanism portion is set to a range in which the discharge port passes through the center of the substrate support portion but does not reach the outer edge of the substrate support portion.

7. The cleaning method according to any one of claims 1 to 4, wherein in the step (B), a speed at which the substrate supporting portion or the nozzle mechanism portion is relatively moved is changed based on a position of the substrate supporting portion that the discharge port faces.

8. The cleaning method according to any one of claims 1 to 4, wherein the nozzle mechanism portion comprises a first nozzle mechanism and a second nozzle mechanism for discharging a film forming gas toward the substrate, and a third nozzle mechanism for discharging the cleaning gas toward the substrate supporting portion. In the film forming process, the first nozzle mechanism and the second nozzle mechanism are swung independently of each other while the substrate is rotated to form a film on the substrate. In the step (B), only the third nozzle mechanism is swung while the substrate supporting portion is rotated.

9. The cleaning method according to claim 8, wherein the first nozzle mechanism comprises a first nozzle extending inside the processing container, a first nozzle operating portion provided at a base end of the first nozzle and causing the first nozzle to swing, and a first head provided at a front end of the first nozzle and discharging an adsorbed gas as the film-forming gas. The second nozzle mechanism comprises a second nozzle extending inside the processing container, a second nozzle operating portion provided at a base end of the second nozzle and causing the second nozzle to swing, and a second head provided at a front end of the second nozzle and discharging a reaction gas reacting with the adsorbed gas as the film forming gas. The third nozzle mechanism comprises a third nozzle extending inside the processing container, a third nozzle action portion provided at the base end of the third nozzle for swinging the third nozzle, and a third head provided at the front end of the third nozzle for discharging the cleaning gas.

10. A film forming device for forming a film on a substrate, comprising: a processing container that accommodates the substrate, a substrate supporting part that supports the substrate in the processing container and rotates the substrate; a nozzle mechanism portion for discharging a film forming gas and a cleaning gas toward the substrate supported by the substrate supporting portion, a control unit that controls the actions of the substrate support unit and the nozzle mechanism unit, The control unit controls: (A) step of carrying out the substrate on which the film forming process has been carried out from the interior of the processing container, (B) step, after the step (A), cleaning the substrate support part and / or the peripheral part of the substrate support part, In the (B) step, while the substrate supporting part is rotated, the substrate supporting part or the nozzle mechanism part is relatively moved in such a manner that the discharge port of the nozzle mechanism part passes through the center of the substrate supporting part, and a cleaning gas is discharged from the discharge port of the nozzle mechanism part toward the substrate supporting part and / or the peripheral part of the substrate supporting part, thereby partially cleaning the film forming area of ​​the substrate supporting part and / or the peripheral part of the substrate supporting part.

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