A production equipment for heavily phosphorus-doped substrate high-resistance epitaxial wafers

Abstract

The present invention discloses a production device for heavily phosphorus-doped substrate high-resistance epitaxial wafers, specifically relating to the technical field of epitaxial equipment. It includes a device main body, a gas mixing part, and a placement part. The device main body includes a housing, and a heating mechanism and a lifting platform are arranged inside the housing. The gas mixing part includes a four-way pipe, one end of the four-way pipe is provided with a mixing cylinder, a stirring mechanism is arranged at the free end of the mixing cylinder, an air outlet pipe is arranged below the stirring mechanism, and a plurality of spray heads are arranged on the air outlet pipe. The placement part includes a rotating shaft, the rotating shaft is driven by a driving mechanism, a base is arranged on the rotating shaft, and a plurality of trays are arranged on the side of the base. Through the gas mixing structure, uniform gas distribution design, flexible operation mode, and stable and durable structural materials, the present invention effectively solves the problem of uneven gas mixing during the epitaxial growth process, and improves the uniformity and production efficiency of epitaxial growth.

Description

Technical Field

[0001] The present invention relates to the technical field of epitaxial equipment, and more specifically, to a production equipment for heavily phosphorus-doped substrate high-resistance epitaxial wafers. Background Art

[0002] Epitaxial wafer production equipment is a key equipment for semiconductor material preparation. By making gaseous substances crystallize directionally on a single crystal substrate in a high-temperature environment, a single crystal thin film with the same lattice structure as the substrate is formed. With the development of power electronics technology towards high frequency, energy saving, light weight, and miniaturization, new requirements are put forward for the frequency characteristics, switching characteristics, power capacity, power loss, high reliability, and low cost of power semiconductor devices. Integrated circuit switching power supply Schottky diodes and field-controlled high-frequency power electronic devices made of silicon epitaxial wafers on heavily phosphorus-doped substrates are the preferred products. Selecting a phosphorus-doped low-resistivity substrate can mainly significantly reduce the proportion of the voltage drop caused by the semiconductor part in the voltage drop and the on-resistance. Another important influencing factor is the current distribution, which is as balanced as possible within the entire chip range and minimizes the spreading resistance of the front-end metallization of the chip, thereby minimizing the saturation resistance and improving the device performance.

[0003] Chinese Patent with application number 202210428945.8 discloses an epitaxial growth device, including a furnace body. The furnace body is provided with a reaction chamber, in which a horizontally arranged first reaction base and a second reaction base are respectively arranged, and the first reaction base and the second reaction base are arranged at intervals along the horizontal direction. The furnace body is also provided with a first gas inlet part, a second gas inlet part, and an air outlet part respectively communicating with the reaction chamber. The first reaction base is arranged between the first gas inlet part and the air outlet part, and the second reaction base is arranged between the second gas inlet part and the air outlet part; reaction media can enter the reaction chamber through the first gas inlet part and the second gas inlet part respectively and leave the reaction chamber through the air outlet part.

[0004] Although the epitaxial growth device provided by this patent solves the problem of too low output efficiency of the epitaxial layer of the existing epitaxial furnace, however, this device lacks a gas mixing structure and cannot mix the epitaxial gas and the doping gas. The gas is directly introduced into the reaction container for epitaxial reaction, and the gas in the reaction container is not evenly mixed, resulting in too fast or too slow growth rates in local areas, leading to fluctuations in the thickness of the epitaxial layer. When the doping gas is not fully mixed, it will cause the doping distribution of the epitaxial layer to be in a gradient or island-like aggregation, directly affecting the resistivity distribution of the device.

[0005] Therefore, the present invention proposes a production equipment for heavily phosphorus-doped substrate high-resistance epitaxial wafers to solve the above problems. Summary of the Invention

[0006] To overcome the above-mentioned defects of the prior art, embodiments of the present invention provide a production device for heavily doped phosphorus substrate high-resistance epitaxial wafers. By providing a gas mixing part and a placement part, the problems raised in the above-mentioned background art are solved.

[0007] To achieve the above object, the present invention provides the following technical solution: A production device for heavily doped phosphorus substrate high-resistance epitaxial wafers, including a device main body, the device main body includes a housing, an upper part inside the housing is provided with a heating mechanism for providing a high-temperature reaction space, and a lifting platform located below the heating mechanism is arranged inside the housing, and the lifting platform is used for picking and placing wafers;

[0008] A gas mixing part, the gas mixing part includes a four-way pipe, one end of the four-way pipe is provided with a mixing cylinder, a stirring mechanism is arranged at the free end of the mixing cylinder, two symmetrically distributed air outlet pipes are arranged below the stirring mechanism, and a plurality of nozzles are arranged on the air outlet pipes, and a plurality of air spraying holes are opened on the nozzles;

[0009] A placement part, the placement part includes a rotating shaft rotatably connected to the lifting platform, the rotating shaft is driven by a driving mechanism, a base is arranged on the rotating shaft above the lifting platform, a plurality of trays are arranged on the side of the base, and the trays are used for placing wafers, and each tray can be aligned with the corresponding nozzle;

[0010] When the driving mechanism drives the rotating shaft to rotate, the stirring mechanism can rotate following the rotation of the rotating shaft.

[0011] Preferably, the heating mechanism includes a heating cavity with an opening facing downwards, the heating cavity is made of quartz material to achieve a better heat preservation effect, and a heating coil is arranged between the heating cavity and the housing.

[0012] Preferably, the lifting platform includes a lifting plate made of quartz material, the lifting plate can block the opening at the bottom of the heating cavity to achieve a better heat preservation effect, and a plurality of electric telescopic rods arranged in a rectangular array are arranged at the bottom of the lifting plate, and the electric telescopic rods are used for driving the lifting plate to move up and down.

[0013] Preferably, a spiral plate is arranged inside the mixing cylinder, the stirring mechanism includes a stirring barrel communicated with the mixing cylinder, a stirring shaft is rotatably connected inside the stirring barrel, a plurality of stirring rods evenly distributed along the circumferential direction are arranged on both the upper and lower sides of the stirring shaft, and the stirring rods on the upper and lower sides are staggered, and a plurality of vertical rods perpendicular to each stirring rod are arranged on each stirring rod.

[0014] Preferably, the driving mechanism includes a support plate fixed to the lifting plate, a motor is arranged on the support plate, and the output end of the motor is fixed to the rotating shaft.

[0015] Preferably, a plurality of rotation mechanisms corresponding to the trays one by one are provided on the base. Each rotation mechanism includes a short shaft rotatably connected to the base. One end of the short shaft is fixed to the corresponding tray, and a turntable is provided at the other end. A plurality of blades are evenly distributed on the side surface of the turntable along the circumferential direction. A plurality of through grooves are formed in the base around the short shaft, and each through groove corresponds to the plurality of blades on the corresponding side.

[0016] Preferably, a sleeve located below the stirring shaft is provided at the top of the rotating shaft. A plurality of clamping grooves evenly distributed along the circumferential direction are formed on the inner surface of the sleeve, and the clamping grooves gradually become wider towards the direction close to the stirring shaft. A plurality of insertion blocks capable of being inserted into the clamping grooves are provided at the lower part of the stirring shaft.

[0017] Preferably, the base is integrally in a polygonal conical shape with a smaller upper part and a larger lower part to achieve a better epitaxial effect. A plurality of through holes are formed at the bottom of the base.

[0018] Preferably, two symmetrically distributed material holes are formed in the lower part of the outer shell to facilitate the taking and placing of the wafers.

[0019] Preferably, a first joint, a second joint and a third joint are provided at the top of the outer shell, and the first joint, the second joint and the third joint are respectively communicated with the other three ends of the four-way pipe.

[0020] The technical effects and advantages of the present invention are as follows:

[0021] 1. A gas mixing part is provided in the present invention. The four-way pipe in it can make the epitaxial gas and the doping gas collide and mix for the first time. The second mixing is carried out through the spiral guiding action of the spiral plate in the mixing cylinder, and then it is introduced into the stirring mechanism. The design of the stirring shaft and the stirring rod in the stirring mechanism can carry out the third mixing of the epitaxial gas and the doping gas. Through multiple mixings, the two gases are evenly distributed in the mixed gas, further enhancing the gas mixing effect. In addition, this design ensures that the gas is fully mixed evenly before entering the reaction vessel and finally reaches the reaction space through the evenly distributed spray holes on the nozzle, avoiding the problem of too fast or too slow growth rate in local areas, thereby reducing the fluctuation of the epitaxial layer thickness.

[0022] 2. Through the design of the placing part in the present invention, uniform heating and gas contact of the epitaxial wafers on the trays during the reaction are realized. The trays can accurately align with the nozzle to ensure that the gas is evenly distributed to each epitaxial wafer. Moreover, a plurality of trays are provided on the base, enabling a plurality of wafers to grow epitaxially simultaneously, accelerating the epitaxial growth efficiency. In addition, the design of the rotation mechanism enables the trays to rotate, further promoting the uniform distribution of the gas on the surface of the epitaxial wafers and improving the uniformity of the epitaxial growth.

[0023] 3. The present invention takes into account the flexibility of operation and the degree of automation. The lifting platform moves up and down through an electric telescopic rod, which is convenient for placing and removing epitaxial wafers. Moreover, a sleeve is provided between the rotating shaft and the stirring shaft, enabling the stirring shaft to rotate along with the rotating shaft. The driving mechanism drives the rotation of the rotating shaft and the stirring mechanism through a motor, making full use of the power of the driving mechanism to achieve gas mixing and uniform heating of the epitaxial wafers. This design reduces manual operation and improves production efficiency.

[0024] 4. In terms of the structure and material selection of the present invention, the stability and durability under high-temperature environments are considered. The heating mechanism adopts a heating cavity and heating coil made of quartz material, which can withstand high temperatures and maintain the stability of the structure. The lifting platform also uses quartz material to ensure durability under high-temperature environments. In addition, the connection and sealing design between various parts of the equipment also consider gas tightness and safety, ensuring the stable operation of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic diagram of the overall structure of the present invention.

[0026] Figure 2 is a sectional view of the overall structure of the present invention.

[0027] Figure 3 is an exploded view of the four-way pipe and the mixing cylinder of the present invention.

[0028] Figure 4 is a sectional view of the four-way pipe and the mixing cylinder of the present invention.

[0029] Figure 5 is a schematic diagram of the structure of the gas mixing part of the present invention.

[0030] Figure 6 is an exploded view of the gas mixing part of the present invention.

[0031] Figure 7 is a schematic diagram of the structure of the placement part of the present invention.

[0032] Figure 8 is a bottom view of the placement part of the present invention.

[0033] Figure 9 is a schematic diagram of the structure of the base of the present invention.

[0034] Figure 10 is an exploded view of the self-rotation mechanism of the present invention.

[0035] Figure 11 is a top view of the sleeve of the present invention.

[0036] Figure 12 is a sectional view of the sleeve of the present invention.

[0037] The reference signs are:

[0038] 1. Equipment main body; 101. Outer shell; 102. Heating mechanism; 1021. Heating cavity; 1022. Heating coil; 103. Lifting platform; 1031. Lifting plate; 1032. Electric telescopic rod

[0039] 2. Gas mixing part; 201. Four-way pipe; 202. Mixing cylinder; 203. Stirring mechanism; 2031. Stirring barrel; 2032. Stirring shaft; 2033. Stirring rod; 2034. Vertical rod; 204. Air outlet pipe; 205. Sprayer; 206. Spray hole

[0040] 3. Placing part; 301. Rotating shaft; 302. Driving mechanism; 3021. Support plate; 3022. Motor; 303. Base; 304. Tray

[0041] 4. Spiral plate

[0042] 5. Self-rotation mechanism; 501. Short shaft; 502. Turntable; 503. Blade; 504. Through groove

[0043] 6. Sleeve; 7. Card slot; 8. Insert block; 9. Through hole; 10. Material hole; 11. First joint; 12. Second joint; 13. Third joint Detailed implementation mode

[0044] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention

[0045] Embodiment 1

[0046] Please refer to Figures 1 to 12 As shown, the high-resistance epitaxial wafer production equipment of Embodiment 1 of the present invention includes an equipment main body 1, a gas mixing part 2, and a placing part 3

[0047] Please refer to Figure 1 and Figure 2 As shown, the equipment main body 1 includes an outer shell 101. A heating mechanism 102 is provided in the upper part of the outer shell 101. The heating mechanism 102 is used to provide a high-temperature reaction space. A lifting platform 103 is provided in the outer shell 101 below the heating mechanism 102. The lifting platform 103 is used to pick and place wafer slices

[0048] Combined with Figure 3 、 Figure 4 、 Figure 5 and Figure 6As shown in the figure, the gas mixing part 2 includes a four-way pipe 201. One end of the four-way pipe 201 is provided with a mixing cylinder 202. A stirring mechanism 203 is provided at the free end of the mixing cylinder 202. Two symmetrically distributed air outlet pipes 204 are provided below the stirring mechanism 203. A plurality of nozzles 205 are provided on the air outlet pipes 204, and a plurality of air injection holes 206 are opened on the nozzles 205.

[0049] Combined with Figure 7 As shown in the figure, the placement part 3 includes a rotating shaft 301 rotatably connected to the lifting platform 103. The rotating shaft 301 is driven by a driving mechanism 302. A base 303 is provided on the rotating shaft 301 above the lifting platform 103. A plurality of trays 304 are provided on the side of the base 303. The trays 304 are used to place the wafers, and each tray 304 can be aligned with the corresponding nozzle 205 on the side.

[0050] When the driving mechanism 302 drives the rotating shaft 301 to rotate, the stirring mechanism 203 can rotate following the rotation of the rotating shaft 301.

[0051] Please refer to Figure 2 As shown in the figure, the heating mechanism 102 includes a heating cavity 1021 with an opening facing downwards. The heating cavity 1021 is made of quartz material to achieve a better heat preservation effect. A heating coil 1022 is provided between the heating cavity 1021 and the outer shell 101.

[0052] It should be noted that the heating coil 1022 is a prior art and can generate heat when powered on. The specific structure thereof will not be described in detail here.

[0053] Please refer to Figure 2 As shown in the figure, the lifting platform 103 includes a lifting plate 1031. The lifting plate 1031 is made of quartz material. The lifting plate 1031 can block the opening at the bottom of the heating cavity 1021 to achieve a better heat preservation effect. A plurality of electric telescopic rods 1032 arranged in a rectangular array are provided at the bottom of the lifting plate 1031. The electric telescopic rods 1032 are used to drive the lifting plate 1031 to move up and down.

[0054] It should be noted that the electric telescopic rod 1032 is a prior art and can extend or shorten when powered on. The specific structure thereof will not be described in detail here.

[0055] Furthermore, the technical personnel can connect the tail gas treatment device to the lifting plate 1031. When the lifting plate 1031 and the heating cavity 1021 form a sealed space, the tail gas treatment device is communicated with the sealed space, and can absorb and treat the waste gas generated during the epitaxial process to prevent the waste gas from polluting the environment.

[0056] Please refer to Figure 2As shown, the driving mechanism 302 includes a support plate 3021 fixed to the lifting plate 1031. A motor 3022 is provided on the support plate 3021, and the output end of the motor 3022 is fixed to the rotating shaft 301.

[0057] It should be noted that the motor 3022 is a prior art and can rotate when powered on. The specific structure thereof will not be described in detail herein.

[0058] Please refer to Figure 7 and Figure 9 As shown, the base 303 is in the shape of a multi-sided cone with a smaller top and a larger bottom to achieve a better epitaxial effect. A plurality of through holes 9 are provided at the bottom of the base 303; two symmetrically distributed material holes 10 are provided at the lower part of the outer shell 101 to facilitate the picking and placing of the wafers; a first joint 11, a second joint 12 and a third joint 13 are provided at the top of the outer shell 101, and the first joint 11, the second joint 12 and the third joint 13 are respectively communicated with the other three ends of the four-way pipe 201.

[0059] During use, the technician needs to first connect the gas pipeline for pre-treating the wafers to the third joint 13, connect the epitaxial gas pipeline to the first joint 11, and connect the doping gas pipeline to the second joint 12. In the initial state, the lifting plate 1031 is in contact with the lower end of the heating cavity 1021. At this time, the lifting plate 1031 blocks the opening at the bottom of the heating cavity 1021.

[0060] It should be noted that the epitaxial gas is a mixed gas of two reaction gases and can undergo a chemical reaction in a high-temperature environment to generate silicon. The doping gas is also a mixed gas of two reaction gases and can undergo a chemical reaction in a high-temperature environment to generate a doping substance.

[0061] The staff controls the simultaneous contraction of the plurality of electric telescopic rods 1032. The plurality of electric telescopic rods 1032 drive the lifting plate 1031 to move downward. The lifting plate 1031 drives the placing part 3 to move downward. The placing part 3 moves out of the heating cavity 1021 until the placing part 3 moves between the two material holes 10. Then, the plurality of electric telescopic rods 1032 stop contracting. At this time, the technician can sequentially attach a plurality of wafers to the plurality of trays 304, and then control the elongation of the plurality of electric telescopic rods 1032. The plurality of electric telescopic rods 1032 jointly drive the lifting plate 1031 to rise.

[0062] When the lifting plate 1031 blocks the opening at the bottom of the heating cavity 1021, the technician controls the multiple electric telescopic rods 1032 to stop extending, energizes the heating coil 1022, and the heating coil 1022 starts to heat the heating cavity 1021. The technician can place a thermometer in the heating cavity 1021 and monitor the real-time temperature in the heating cavity 1021 through the thermometer, heat the temperature to the optimal temperature required for the gas reaction, and then start the motor 3022 to rotate. The output end of the motor 3022 drives the rotating shaft 301 to rotate, the rotating shaft 301 drives the base 303 to rotate, the base 303 drives the multiple trays 304 and the wafers in the trays 304 to rotate around the rotating shaft 301, and then opens the valve of the gas pipeline for preprocessing the wafers, so that the preprocessing gas enters the four-way pipe 201 through the third joint 13. Since the first joint 11 and the second joint 12 are both connected to the gas pipeline, and the valves of the two gas pipelines are both in the closed state at this time, the preprocessing gas can only flow out through the mixing cylinder 202.

[0063] The preprocessing gas flows out through the air outlet pipe 204 and then sprays out through the multiple air spray holes 206 on the nozzle 205. The multiple air spray holes 206 can make the gas evenly spray onto the surface of the wafer, preprocess the surface of the wafer, make the surface of the wafer more conducive to the epitaxial growth of the epitaxial layer, and since the multiple wafers are all in a state of rotating around the rotating shaft 301, each wafer can be effectively preprocessed.

[0064] After the preprocessing is completed, the technician closes the valve of the preprocessing gas pipeline, and then opens the valves of the epitaxial gas pipeline and the doping gas pipeline. In the prior art, flow meters are provided on both the epitaxial gas pipeline and the doping gas pipeline, and the staff can adjust the ratio of the two gases through the flow meters on the pipelines. The epitaxial gas enters the four-way pipe 201 through the first joint 11, and the doping gas enters the four-way pipe 201 through the second joint 12.

[0065] The fast-flowing epitaxial gas and doping gas collide and mix together in the four-way pipe 201, so that the two gases are first mixed and then introduced into the heating cavity 1021. Compared with the method of directly introducing the two gases into the heating container, the chemical reaction effect is better. Since the valve of the preprocessing pipeline is in the closed state at this time, the mixed gas can only enter the mixing cylinder 202, then pass through the stirring mechanism 203 and enter the two air outlet pipes 204, and finally spray out from the multiple air spray holes 206 on the nozzle 205 onto the wafer. The epitaxial gas undergoes a chemical reaction in the high-temperature environment and deposits on the surface of the wafer. At the same time, the doping gas also undergoes a chemical reaction in the high-temperature environment and deposits on the surface of the wafer. The two substances together form the epitaxial layer on the surface of the wafer, and the epitaxial layer can improve the performance of the wafer.

[0066] Embodiment 2

[0067] In actual use, it is found that although the four-way pipe 201 can make two gases collide and mix preliminarily, and then the mixed gas enters the heating cavity 1021 through the mixing cylinder 202. However, due to the short length of the mixing cylinder 202, the mixed gas can directly pass through the mixing cylinder 202, making it difficult to achieve uniform mixing of the gases. Based on the above embodiments, further improvements are made.

[0068] Please refer to Figure 3 and Figure 4 As shown, a spiral plate 4 is provided in the mixing cylinder 202. The stirring mechanism 203 includes a stirring barrel 2031 communicated with the mixing cylinder 202. A stirring shaft 2032 is rotatably connected in the stirring barrel 2031. A plurality of stirring rods 2033 evenly distributed in the circumferential direction are provided on both the upper and lower sides of the stirring shaft 2032, and the stirring rods 2033 on the upper and lower sides are staggered. A plurality of vertical rods 2034 perpendicular to each stirring rod 2033 are provided on each stirring rod 2033.

[0069] Please refer to Figure 2 、 Figure 6 、 Figure 11 and Figure 12 As shown, a sleeve 6 is provided at the top of the rotating shaft 301 and is located below the stirring shaft 2032. A plurality of card slots 7 evenly distributed in the circumferential direction are formed on the inner surface of the sleeve 6. The card slots 7 gradually become wider in the direction approaching the stirring shaft 2032. A plurality of insertion blocks 8 capable of being inserted into the card slots 7 are provided at the lower part of the stirring shaft 2032.

[0070] Based on the above embodiments, when the rotating shaft 301 moves upward with the lifting platform 103, the sleeve 6 moves upward with the rotating shaft 301, and the distance between the sleeve 6 and the stirring shaft 2032 gradually decreases until the card slots 7 in the sleeve 6 contact the insertion blocks 8 on the stirring shaft 2032. Since the card slots 7 gradually become wider in the direction approaching the stirring shaft 2032, the insertion blocks 8 can be smoothly inserted into the card slots 7 and finally enter the bottom of the card slots 7, and each insertion block 8 is located at the bottom of the corresponding card slot 7. When the motor 3022 drives the rotating shaft 301 to rotate, the rotating shaft 301 drives the sleeve 6 to rotate, and the sleeve 6 drives the stirring shaft 2032 to rotate, making full use of the power of the motor 3022.

[0071] The epitaxial gas and the doping gas collide and mix together in the four-way pipe 201, and the mixed gas enters the mixing cylinder 202. Since the spiral plate 4 is provided in the mixing cylinder 202, the mixed gas cannot directly pass through the mixing cylinder 202 and can only gradually flow toward the stirring mechanism 203 along the spiral shape on the surface of the spiral plate 4. The spiral plate 4 extends the path length of the mixed gas passing through the mixing cylinder 202, enabling the mixed gas to flow spirally in the mixing cylinder 202 and mix again to a certain extent, enhancing the mixing effect.

[0072] The mixed gas passes through the mixing cylinder 202 and enters the stirring barrel 2031 in the stirring mechanism 203. The stirring shaft 2032 drives a plurality of stirring rods 2033 to rotate. Each stirring rod 2033 drives a plurality of vertical rods 2034 to rotate around the stirring shaft 2032. The plurality of vertical rods 2034 can expand the action range of the stirring rods 2033, and the stirring rods 2033 on the upper and lower sides are staggered, so as to stir the mixed gas in the stirring barrel 2031, making the mixed gas mix evenly. The evenly mixed gas enters the nozzle 205 from the air outlet pipe 204 and is finally sprayed onto the wafer from a plurality of air spray holes 206, and an epitaxial layer grows on the wafer.

[0073] Embodiment III

[0074] In actual use, it is found that although the above mechanism can mix the two gases evenly and make the mixed gas meet the requirements, during the growth process of the epitaxial layer, the wafers on the tray 304 only rotate with the base 303, and the relative positions of the wafers in the tray 304 never change. It is difficult for the mixed gas to come into full contact with the surface of the wafer, and it may not be able to contact at some points, which easily causes uneven distribution of the epitaxial layer. Based on the above embodiments, further improvements are made.

[0075] Please refer to Figure 9 and Figure 10 As shown, a plurality of self-rotation mechanisms 5 corresponding to the trays 304 one by one are provided on the base 303. The self-rotation mechanism 5 includes a short shaft 501 rotatably connected to the base 303. One end of the short shaft 501 is fixed to the corresponding tray 304, and the other end is provided with a turntable 502. A plurality of blades 503 are evenly distributed on the side surface of the turntable 502 along the circumferential direction. A plurality of through grooves 504 are formed on the base 303 around the short shaft 501, and each through groove 504 corresponds to a plurality of blades 503 on the corresponding side.

[0076] Based on the above embodiments, when the mixed gas is sprayed onto the wafer from a plurality of air spray holes 206, part of the mixed gas and the waste gas generated after the chemical reaction flow out from around the wafer and then enter the through grooves 504 around the wafer. The gas acts on the plurality of blades 503 corresponding to the through grooves 504. The plurality of blades 503 are subjected to the wind force generated by the gas flow, and the plurality of blades 503 start to drive the turntable 502 to rotate. The turntable 502 drives the short shaft 501 to rotate, and the short shaft 501 drives the tray 304 fixed thereto to rotate. The tray 304 drives the wafer to rotate around the short shaft 501, that is, the wafer rotates while rotating with the base 303, so that the mixed gas can be in uniform contact with the wafer, making the thickness of the grown epitaxial layer more uniform, and the doping substances are evenly distributed, overcoming the defects caused by uneven gas mixing, and improving the performance of the wafer through the uniform epitaxial layer.

[0077] As described above, it is only the preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered within the protection scope of the present invention.

Claims

1. A device for producing high-resistance epitaxial wafers on heavily phosphorus-doped substrates, comprising a device body, the device body comprising a housing, characterized in that: A heating mechanism is provided in the upper part of the shell, and a lifting platform is provided in the shell below the heating mechanism; A gas mixing part, comprising a four-way pipe, one end of which is provided with a mixing cylinder, a free end of which is provided with a stirring mechanism, two symmetrically distributed gas outlet pipes are provided at the lower part of the stirring mechanism, a plurality of nozzles are provided on the gas outlet pipes, and a plurality of gas injection holes are opened on the nozzles; The mixing drum is provided with a spiral plate, the stirring mechanism comprises a stirring barrel connected to the mixing drum, a stirring shaft is rotatably connected in the stirring barrel, a plurality of stirring rods evenly distributed along the circumferential direction are provided on the upper and lower sides of the stirring shaft, and the stirring rods on the upper and lower sides are staggered, and each stirring rod is provided with a plurality of vertical rods perpendicular to it; The placement part includes a rotating shaft rotatably connected to the lifting platform, the rotating shaft is driven by a driving mechanism, a base located above the lifting platform is provided on the rotating shaft, and a plurality of trays are provided on the side of the base, each of the trays can be aligned with the nozzle on the corresponding side; A sleeve is provided at the top of the rotating shaft and is located below the stirring shaft. A plurality of slots are evenly distributed along the circumferential direction on the inner surface of the sleeve. The slots gradually widen toward the stirring shaft. A plurality of plugs that can be plugged into the slots are provided at the bottom of the stirring shaft. When the driving mechanism drives the rotating shaft to rotate, the stirring mechanism can rotate along with the rotating shaft.

2. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 1, characterized in that: The heating mechanism comprises a heating cavity with an opening facing downwards, the heating cavity is made of quartz material, and a heating coil is arranged between the heating cavity and the shell.

3. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 2, characterized in that: The lifting platform comprises a lifting plate, which is made of quartz material. The lifting plate can cover the opening at the bottom of the heating cavity, and a plurality of electric telescopic rods distributed in a rectangular array are arranged at the bottom of the lifting plate.

4. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 3, characterized in that: The driving mechanism comprises a supporting plate fixed to the lifting plate, a motor is arranged on the supporting plate, and an output end of the motor is fixed to the rotating shaft.

5. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 1, characterized in that: The base is provided with a plurality of self-rotating mechanisms corresponding to the trays one by one, and the self-rotating mechanisms include a short shaft rotatably connected to the base, one end of the short shaft is fixed to the tray on the corresponding side, and the other end is provided with a turntable, and the side surface of the turntable is provided with a plurality of blades evenly distributed along the circumferential direction, and the base is provided with a plurality of through grooves located around the short shaft, and each of the through grooves corresponds to a plurality of blades on the corresponding side.

6. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 1, characterized in that: The base is in the shape of a polygonal cone with a small top and a large bottom as a whole, and a plurality of through holes are provided at the bottom of the base.

7. The equipment for producing high resistance epitaxial wafers on heavily phosphorus-doped substrates according to claim 1, characterized in that: The lower part of the shell is provided with two symmetrically distributed material holes.

8. The equipment for producing high resistance epitaxial wafers with heavily phosphorus-doped substrates according to claim 1, characterized in that: The top of the shell is provided with a first joint, a second joint and a third joint, and the first joint, the second joint and the third joint are respectively connected with the other three ends of the four-way pipe.

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