Gallium oxide heteroepitaxy on diamond surface and preparation method thereof

Abstract

The invention belongs to the technical field of semiconductor chip production, and particularly relates to gallium oxide heteroepitaxially formed on the surface of diamond and a preparation method of the gallium oxide heteroepitaxially formed on the surface of the diamond. A crystal device; the substrate is made of a diamond material, and the crystal device is made of a gallium oxide material; the crystal device is grown on the surface of the substrate by adopting a heteroepitaxy technology; by adopting the heteroepitaxy technology and the manufacturing of the diamond wafer, the required purity is high, the crystal phase is consistent, the impurities are few, and the size is large; gallium oxide also needs to be made into a large-size material and also needs to be made into the same size as diamond, the ultra-low cost advantage, the electron mobility, the low temperature resistance and other characteristics of gallium oxide are fully utilized and combined with the characteristics of diamond, and a novel heterostructure power and frequency chip which is high in power, high in heat dissipation, ultralow in temperature, high in frequency and low in price is researched and developed. Power and frequency chips with very good performance are realized; wherein the layer number, the structure, the material, the process and the like of epitaxy need to be designed for heteroepitaxy.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor chip production, in particular to gallium oxide heteroepitaxially grown on a diamond surface and a preparation method thereof. Background Art

[0002] At present, the materials of electronic power chips are mainly silicon, gallium arsenide, gallium nitride, sapphire, silicon carbide and other materials, which are used in computing, power, frequency and other devices. The materials and epitaxy of semiconductor power and radio frequency chips are one of the cores. High-quality, low-density defect gallium oxide films are obtained through epitaxial growth, and then devices are made.

[0003] Gallium oxide has become more and more mature in terms of growth and preparation. However, gallium oxide materials also have a natural shortcoming - extremely low thermal conductivity, which makes it difficult for power devices to quickly dissipate the heat accumulated inside the device during application, especially in high-power scenarios, thus inducing reliability problems of the device. Diamond, as the material with the highest thermal conductivity in nature, is an excellent choice for gallium oxide heat sinks. In the existing technology, gallium oxide and diamond are integrated by mechanical stripping and ionic bonding. The gallium oxide / diamond heterostructure obtained by this method can be combined very compactly through certain process treatments. There is also a technology that uses chemical vapor deposition and magnetron sputtering to heteroepitaxially grow gallium oxide films on diamond.

[0004] In the prior art, although the above two methods can meet the needs of industrialization, the interface bonding strength, surface microstructure and morphology of the gallium oxide thin film prepared therefrom still need to be improved. Moreover, in the above technologies, it is very difficult to bond gallium oxide and diamond, and direct bonding is impossible. The process is complicated and the preparation cost is high.

[0005] To this end, the present invention provides a gallium oxide heteroepitaxially grown on a diamond surface and a preparation method thereof. Summary of the invention

[0006] In order to make up for the shortcomings of the prior art, the technical problems proposed in the background technology such as the need to improve the interface bonding strength, surface microstructure and morphology of the gallium oxide film, the difficulty in bonding gallium oxide and diamond, the inability to perform direct bonding, the complex process and the high preparation cost are solved.

[0007] The technical solution adopted by the present invention to solve the technical problem is: the gallium oxide heteroepitaxially grown on the surface of diamond described in the present invention comprises: substrate; Crystal devices; The substrate is made of diamond material, and the crystal device is made of gallium oxide material; the crystal device is grown on the surface of the substrate by using heteroepitaxial technology.

[0008] Preferably, a method for preparing gallium oxide by heteroepitaxial growth on a diamond surface comprises the following steps: S1: Prepare raw materials: First, use MPCVD equipment to produce a single crystal diamond slice with a diameter of 2 cm; S2: Pretreatment: pretreating the surface of the diamond slice to remove impurities on the surface of the diamond slice; S3: placing the processed diamond slice into the reaction chamber of the atomic layer deposition; then introducing the oxygen source reaction precursor into the reaction chamber to react with the diamond to form an oxygen-terminated diamond surface; S4: introducing a gallium source precursor into a reaction chamber to grow gallium oxide on the surface of the oxygen-terminated diamond to obtain a gallium oxide film; S5: Finally, the chip is designed, and then manufactured through photolithography, manufacturing, testing, and packaging to produce a finished chip. S6: After the finished chips are completed, they are placed in an N2 box for protection.

[0009] Preferably, the method for using the MPCVD device in S1 comprises the following steps: S101: Substrate processing: Select suitable substrate material and perform surface cleaning and pretreatment; S102: Gas configuration: introducing hydrogen, methane and other reaction gases into the reaction chamber, and controlling the flow rate and ratio of the gases; S103: Plasma excitation: Turn on the microwave source to generate microwave plasma, so that the reaction gas is decomposed into atoms and ions under the action of the plasma, and a diamond film is formed on the surface of the substrate; S104: Growth control: The growth rate and quality of diamond are controlled by adjusting microwave power, gas pressure and temperature. The reaction is stopped after the growth reaches a predetermined time to obtain a single crystal diamond slice; the diamond slice includes a circular slice, a square slice and a special-shaped slice.

[0010] Preferably, the pre-processing in S2 comprises the following steps: S201: first, using an organic solvent such as acetone and an alcohol solution to clean the diamond substrate in an ultrasonic cleaner for 5-10 minutes; S202: Then, chemical pollutants and particulate impurities are removed according to the standard RCA cleaning process, and then rinsed with high-purity deionized water to remove the chemical solution remaining in the previous process; S203: Then the diamond slice is subjected to grinding treatment, including rough grinding and fine grinding; S204: Cutting the diamond slice as required to obtain the required size; S205: Put the cleaned, polished and cut diamond slices into a drying furnace for drying.

[0011] Preferably, the oxygen source reaction precursor in S3 is oxygen or ozone, and the purity of the oxygen needs to be greater than 99.995%; the method of introducing the oxygen source reaction precursor into the reaction chamber is a pulse method, and the pressure of the reaction chamber is controlled at 2-12 mbar.

[0012] Preferably, the gallium source precursor in S4 is one of trimethylgallium, triethylgallium or tert-butylgallium.

[0013] Preferably, the duration of the precursor pulse time in S4 is 10-100 ms; and the temperature window of the gallium oxide film is 150-250°C.

[0014] Preferably, the chip preparation method in S5 comprises the following steps: S501: Chip design: Design the chip surface pattern as needed to determine the chip's functions, performance, and electrical characteristics; S502: Photolithography: using a photolithography machine to expose the design pattern onto the photoresist, and the exposed photoresist is developed to form the desired pattern; S503: Manufacturing: forming transistors and other circuit components by ion implantation, diffusion, and chemical vapor deposition; S504: Testing: including wafer testing and chip testing; wafer testing is performed before wafer cutting to detect electrical parameters and functions; chip testing verifies the performance and reliability of the chip after packaging; S505: Packaging: Obtain finished chips through wire bonding, molding, and printed circuit board assembly.

[0015] The beneficial effects of the present invention are as follows: 1. The gallium oxide heteroepitaxially grown on the surface of diamond and the preparation method thereof described in the present invention require high purity, consistent crystal phase, few impurities and large size in the manufacture of diamond wafers by adopting the heteroepitaxial technology; gallium oxide also needs to be manufactured in large size and the same size as diamond, and the ultra-low cost advantage of gallium oxide and the characteristics of electron mobility and low temperature resistance are fully utilized and combined with the characteristics of diamond to develop a new type of heterostructure high-power, high-heat dissipation, ultra-low temperature, high-frequency, low-price power and frequency chip, and realize a power and frequency chip with very good performance; wherein the heteroepitaxial layer number, structure, material, process, etc. of the epitaxial layer need to be designed, and the epitaxial layer is made according to the requirements of the designed chip; the growth rate, temperature, plasma stability, gas ratio and concentration, etc. need to be strictly controlled throughout the process; the crystal phase and impurity control need to be strictly detected.

[0016] 2. The gallium oxide heteroepitaxially grown on the diamond surface and the preparation method thereof described in the present invention comprises the following steps: using MPCVD equipment to manufacture a single crystal diamond slice with a diameter of 2 cm; pre-treating the surface of the diamond slice to remove impurities on the surface of the diamond slice; placing the treated diamond slice into an atomic layer deposition reaction chamber; then introducing an oxygen source reaction precursor into the reaction chamber to react with the diamond to form an oxygen-terminated diamond surface; introducing a gallium source precursor into the reaction chamber to grow gallium oxide on the oxygen-terminated diamond surface to obtain a gallium oxide film; and finally designing a chip, and performing photolithography, manufacturing, After testing and packaging, the finished chips are finally made. After the finished chips are completed, they are placed in an N2 box for protection. The combination of gallium oxide materials and diamond materials will achieve a major breakthrough in power and frequency chips, and can produce power and frequency chips with greater power, higher frequency and better energy efficiency, which will greatly reduce costs and improve product performance. Gallium oxide is grown epitaxially on large-size diamond substrates to produce new high-power, high-frequency and low-temperature resistant chips for use in automotive electronics, optical communications, ships, aviation, aerospace, electricity, industry, drones and other fields. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be further described below in conjunction with the accompanying drawings.

[0018] Figure 1 It is a method flow chart of the method for preparing gallium oxide by heteroepitaxial growth on diamond surface in the present invention; Figure 2 is a method flow chart of a method for using the MPCVD device of the present invention; Figure 3 It is a flow chart of the method for pretreatment in the present invention; Figure 4 It is a flow chart of the method for preparing the chip in the present invention. DETAILED DESCRIPTION

[0019] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0020] like Figures 1 to 4 As shown, a gallium oxide heteroepitaxially grown on a diamond surface according to an embodiment of the present invention comprises: a substrate; a crystal device; the substrate is made of diamond material, and the crystal device is made of gallium oxide material; the crystal device is grown on the substrate surface using heteroepitaxial technology.

[0021] When the diamond and gallium oxide provided by the present invention are used, the manufacture of diamond wafers requires high purity, consistent crystal phase, few impurities and large size; gallium oxide also needs to be manufactured into large-sized materials, and also needs to be the same size as diamond. The ultra-low cost advantage and electron mobility, low temperature resistance and other characteristics of gallium oxide are fully utilized and combined with the characteristics of diamond, and the heteroepitaxial technology is adopted to develop a new type of heterogeneous structure with high power, high heat dissipation, ultra-low temperature, high frequency and low price power and frequency chips, so as to achieve very good performance of power and frequency chips; wherein the heteroepitaxial layer number, structure, material, process and the like of the epitaxial layer need to be designed, and the epitaxial wafer is prepared according to the requirements of the designed chip; the growth rate, temperature, plasma stability, gas ratio and concentration and the like need to be strictly controlled in the whole process; the crystal phase and impurity control need to be strictly detected.

[0022] like Figure 1 As shown, a method for preparing gallium oxide by heteroepitaxial growth on a diamond surface comprises the following steps: S1: Prepare raw materials: First, use MPCVD equipment to produce a single crystal diamond slice with a diameter of 2 cm; S2: Pretreatment: pretreating the surface of the diamond slice to remove impurities on the surface of the diamond slice; S3: placing the processed diamond slice into the reaction chamber of the atomic layer deposition; then introducing the oxygen source reaction precursor into the reaction chamber to react with the diamond to form an oxygen-terminated diamond surface; S4: introducing a gallium source precursor into a reaction chamber to grow gallium oxide on the surface of the oxygen-terminated diamond to obtain a gallium oxide film; S5: Finally, the chip is designed, and then manufactured through photolithography, manufacturing, testing, and packaging to produce a finished chip. S6: After the finished chips are completed, they are placed in an N2 box for protection.

[0023] When the preparation method provided by the present invention is used, firstly, a single crystal diamond slice with a diameter of 2 cm is manufactured by using MPCVD equipment; the surface of the diamond slice is pretreated to remove impurities on the surface of the diamond slice; the treated diamond slice is placed in a reaction chamber of atomic layer deposition; then an oxygen source reaction precursor is introduced into the reaction chamber to react with diamond to form an oxygen-terminated diamond surface; a gallium source precursor is introduced into the reaction chamber to grow gallium oxide on the oxygen-terminated diamond surface to obtain a gallium oxide film; finally, a chip is designed, and a finished chip is finally made through photolithography, manufacturing, testing and packaging; after the finished chip is completed, the finished chip is uniformly placed in an N2 box for protection; the combination of gallium oxide material and diamond material can achieve a great breakthrough in power and frequency chips, and power and frequency chips with greater power, higher frequency and better energy efficiency can be manufactured, which can greatly reduce costs and improve product performance.

[0024] like Figure 2As shown, the method for using the MPCVD device in S1 comprises the following steps: S101: Substrate processing: Select suitable substrate material and perform surface cleaning and pretreatment; S102: Gas configuration: introducing reaction gases such as hydrogen and methane into the reaction chamber, and controlling the flow rate and ratio of the gases; S103: Plasma excitation: Turn on the microwave source to generate microwave plasma, so that the reaction gas is decomposed into atoms and ions under the action of the plasma, and a diamond film is formed on the surface of the substrate; S104: Growth control: The growth rate and quality of diamond are controlled by adjusting microwave power, gas pressure and temperature. The reaction is stopped after the growth reaches a predetermined time to obtain a single crystal diamond slice; the diamond slice includes a circular slice, a square slice and a special-shaped slice.

[0025] When the MPCVD device provided by the present invention is used, a suitable substrate material is selected, and the surface is cleaned and pretreated; reaction gases such as hydrogen and methane are introduced into a reaction chamber, and the flow rate and proportion of the gas are controlled; a microwave source is turned on to generate microwave plasma, so that the reaction gas is decomposed into atoms and ions under the action of the plasma, and a diamond film is formed on the surface of the substrate; the growth rate and quality of the diamond are controlled by adjusting the microwave power, gas pressure and temperature, and the reaction is stopped after the growth reaches a predetermined time to obtain a single crystal diamond slice; the diamond slice includes a circular slice, a square slice and a special-shaped slice; by using microwaves to excite the reaction gas to generate plasma, a diamond film is deposited on the substrate, diamond can be prepared at a relatively low temperature, and the thickness, quality and growth rate of the film can be accurately controlled, and the single crystal diamond slice and special-shaped slice are suitable for preparing high-precision single crystal diamond slices and special-shaped slices.

[0026] like Figure 3 As shown, the preprocessing in S2 includes the following steps: S201: first, using an organic solvent such as acetone and an alcohol solution to clean the diamond substrate in an ultrasonic cleaner for 5-10 minutes; S202: Then, chemical pollutants and particulate impurities are removed according to the standard RCA cleaning process, and then rinsed with high-purity deionized water to remove the chemical solution remaining in the previous process; S203: Then the diamond slice is subjected to grinding treatment, including rough grinding and fine grinding; S204: Cutting the diamond slice as required to obtain the required size; S205: Put the cleaned, polished and cut diamond slices into a drying furnace for drying.

[0027] The pretreatment method provided by the present invention is used. First, an organic solvent such as acetone and alcohol solution is used to clean the diamond substrate in an ultrasonic cleaner for 5-10 minutes. Then, chemical pollutants and particulate impurities are removed according to a standard RCA cleaning process. Then, the diamond slice is rinsed with high-purity deionized water to remove the chemical solution remaining in the previous process. Then, the diamond slice is polished, including rough polishing and fine polishing, so as to enhance the mechanical locking effect between the diamond film and the substrate and improve the adhesion performance. The diamond slice is cut according to needs to obtain the required size. Finally, the cleaned, polished and cut diamond slice is placed in a drying furnace for drying, thereby effectively improving the performance and stability of the diamond slice and laying a solid foundation for manufacturing high-quality products. The diamond slice meets the parameter requirements of high power, good heat dissipation, high frequency and good low-temperature performance. The undoped diamond also has a very high resistance, which is very beneficial to improving the device isolation of the power chip.

[0028] Embodiment 1: The oxygen source reaction precursor in S3 is oxygen or ozone, and the purity of the oxygen must be greater than 99.995%; the method of introducing the oxygen source reaction precursor into the reaction chamber is a pulse method, and the pressure of the reaction chamber is controlled at 2 mbar.

[0029] The gallium source precursor in S4 is trimethylgallium.

[0030] The duration of the precursor pulse time in S4 is 10 ms; and the temperature window of the gallium oxide film is 150°C.

[0031] Embodiment 2: The oxygen source reaction precursor in S3 is oxygen or ozone, and the purity of the oxygen must be greater than 99.995%; the method of introducing the oxygen source reaction precursor into the reaction chamber is a pulse method, and the pressure of the reaction chamber is controlled at 7mbar.

[0032] The gallium source precursor in S4 is triethylgallium.

[0033] The duration of the precursor pulse time in S4 is 55 ms; the temperature window of the gallium oxide film is 200°C.

[0034] Embodiment three: The oxygen source reaction precursor in S3 is oxygen or ozone, and the purity of the oxygen must be greater than 99.995%; the method of introducing the oxygen source reaction precursor into the reaction chamber is a pulse method, and the pressure of the reaction chamber is controlled at 12mbar.

[0035] The gallium source precursor in S4 is tert-butylgallium.

[0036] The duration of the precursor pulse time in S4 is 100 ms; the temperature window of the gallium oxide film is 250°C.

[0037] like Figure 4 As shown, the chip preparation method in S5 includes the following steps: S501: Chip design: Design the chip surface pattern as needed to determine the chip's functions, performance, and electrical characteristics; S502: Photolithography: using a photolithography machine to expose the design pattern onto the photoresist, and the exposed photoresist is developed to form the desired pattern; S503: Manufacturing: forming transistors and other circuit components by ion implantation, diffusion, and chemical vapor deposition; S504: Testing: including wafer testing and chip testing; wafer testing is performed before wafer cutting to detect electrical parameters and functions; chip testing verifies the performance and reliability of the chip after packaging; S505: Packaging: Obtain finished chips through wire bonding, molding, and printed circuit board assembly.

[0038] The chip preparation method provided by the present invention designs a chip surface pattern as required to determine the chip function, performance and electrical characteristics when in use; uses a photolithography machine to expose the designed pattern to a photoresist, and the exposed photoresist is subjected to a development process to form a required pattern; ion implantation, diffusion and chemical vapor deposition are respectively performed to form transistors and other circuit elements; wafer testing is performed before wafer cutting to detect electrical parameters and functions; chip testing is performed to verify the chip performance and reliability after packaging; and finished chips are obtained through wire bonding, molding and printed circuit board assembly.

[0039] Working principle: The manufacture of diamond wafers requires high purity, consistent crystal phase, few impurities and large size; gallium oxide must also be manufactured into large-sized materials, and the same size as diamond. The ultra-low cost advantage of gallium oxide and its electron mobility, low-temperature resistance and other characteristics are fully utilized and combined with the characteristics of diamond. The heteroepitaxial technology is used to develop a new type of heterogeneous structure with high power, high heat dissipation, ultra-low temperature, high frequency and low price power and frequency chips, and realize power and frequency chips with very good performance. Among them, heteroepitaxiality must design the number of epitaxial layers, structure, material, process, etc., and epitaxial wafers must be made according to the requirements of the designed chip; the growth rate, temperature, plasma stability, gas ratio and concentration, etc. must be strictly controlled throughout the process; the crystal phase and impurity control must be strictly tested; First, a single crystal diamond slice with a diameter of 2 cm is manufactured using MPCVD equipment; the surface of the diamond slice is pretreated to remove impurities on the surface of the diamond slice; the treated diamond slice is placed in the reaction chamber of atomic layer deposition; then an oxygen source reaction precursor is introduced into the reaction chamber to react with diamond to form an oxygen-terminated diamond surface; a gallium source precursor is introduced into the reaction chamber to grow gallium oxide on the oxygen-terminated diamond surface to obtain a gallium oxide film; finally, the chip is designed, and the finished chip is finally made through photolithography, manufacturing, testing, and packaging; after the finished chip is completed, the finished chip is uniformly placed in an N2 box for protection; the combination of gallium oxide material and diamond material will achieve a great breakthrough in power and frequency chips, and power and frequency chips with greater power, higher frequency, and better energy efficiency can be manufactured, which will greatly reduce costs and improve product performance; Select a suitable substrate material, clean and pre-treat the surface; introduce hydrogen, methane and other reaction gases into the reaction chamber, and control the flow and proportion of the gas; turn on the microwave source to generate microwave plasma, so that the reaction gas is decomposed into atoms and ions under the action of the plasma, and a diamond film is formed on the surface of the substrate; the growth rate and quality of the diamond are controlled by adjusting the microwave power, gas pressure and temperature, and the reaction is stopped after the growth reaches a predetermined time to obtain a single crystal diamond slice; the diamond slice includes a circular slice, a square slice and a special-shaped slice; by using microwaves to excite the reaction gas to generate plasma, a diamond film is deposited on the substrate, diamond can be prepared at a lower temperature, and the thickness, quality and growth rate of the film can be accurately controlled, which is suitable for making high-precision single crystal diamond slices and special-shaped slices; Finally, the pattern on the chip surface is designed according to needs, and the function, performance and electrical characteristics of the chip are determined; a photolithography machine is used to expose the design pattern to the photoresist, and the exposed photoresist is developed to form the required pattern; transistors and other circuit components are formed through ion implantation, diffusion, and chemical vapor deposition respectively; wafer testing is carried out before wafer cutting to detect electrical parameters and functions; chip testing verifies the performance and reliability of the chip after packaging; finished chips are obtained through wire bonding, molding, and printed circuit board assembly.

[0040] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A gallium oxide heteroepitaxially grown on a diamond surface, comprising: substrate; Crystal devices; The invention is characterized in that: the substrate is made of diamond material, the crystal device is made of gallium oxide material; and the crystal device is grown on the surface of the substrate by adopting heteroepitaxial technology.

2. A method for preparing gallium oxide heteroepitaxially on a diamond surface, applicable to the gallium oxide heteroepitaxially on a diamond surface as claimed in claim 1, characterized in that: The following steps are involved: S1: Prepare raw materials: First, use MPCVD equipment to produce a single crystal diamond slice with a diameter of 2 cm; S2: Pretreatment: pretreating the surface of the diamond slice to remove impurities on the surface of the diamond slice; S3: placing the processed diamond slice into the reaction chamber of the atomic layer deposition; then introducing the oxygen source reaction precursor into the reaction chamber to react with the diamond to form an oxygen-terminated diamond surface; S4: introducing a gallium source precursor into a reaction chamber to grow gallium oxide on the surface of the oxygen-terminated diamond to obtain a gallium oxide film; S5: Finally, the chip is designed, and then manufactured through photolithography, manufacturing, testing, and packaging to produce a finished chip. S6: After the finished chips are completed, they are placed in an N2 box for protection.

3. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 2, characterized in that: The method for using the MPCVD device in S1 comprises the following steps: S101: Substrate processing: Select suitable substrate material and perform surface cleaning and pretreatment; S102: Gas configuration: introducing hydrogen, methane and other reaction gases into the reaction chamber, and controlling the flow rate and ratio of the gases; S103: Plasma excitation: Turn on the microwave source to generate microwave plasma, so that the reaction gas is decomposed into atoms and ions under the action of the plasma, and a diamond film is formed on the surface of the substrate; S104: Growth control: The growth rate and quality of diamond are controlled by adjusting microwave power, gas pressure and temperature. The reaction is stopped after the growth reaches a predetermined time to obtain a single crystal diamond slice; the diamond slice includes a circular slice, a square slice and a special-shaped slice.

4. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 3, characterized in that: The pre-processing in S2 comprises the following steps: S201: first, using an organic solvent such as acetone and an alcohol solution to clean the diamond substrate in an ultrasonic cleaner for 5-10 minutes; S201: first, using an organic solvent such as acetone and an alcohol solution to clean the diamond substrate in an ultrasonic cleaner for 5-10 minutes; S203: Then the diamond slice is subjected to grinding treatment, including rough grinding and fine grinding; S204: Cutting the diamond slice as required to obtain the required size; S205: Put the cleaned, polished and cut diamond slices into a drying furnace for drying.

5. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 4, characterized in that: The oxygen source reaction precursor in S3 is oxygen or ozone, and the purity of the oxygen must be greater than 99.995%; the method of introducing the oxygen source reaction precursor into the reaction chamber is a pulse method, and the pressure of the reaction chamber is controlled at 2-12 mbar.

6. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 5, characterized in that: The gallium source precursor in S4 is one of trimethylgallium, triethylgallium or tert-butylgallium.

7. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 6, characterized in that: The duration of the precursor pulse time in S4 is 10-100 ms; the temperature window of the gallium oxide film is 150-250°C.

8. The method for preparing gallium oxide by heteroepitaxial growth on a diamond surface according to claim 7, characterized in that: The method for preparing the chip in S5 comprises the following steps: S501: Chip design: Design the chip surface pattern as needed to determine the chip's functions, performance, and electrical characteristics; S502: Photolithography: using a photolithography machine to expose the design pattern onto the photoresist, and the exposed photoresist is developed to form the desired pattern; S503: Manufacturing: forming transistors and other circuit components by ion implantation, diffusion, and chemical vapor deposition; S504: Testing: including wafer testing and chip testing; wafer testing is performed before wafer cutting to detect electrical parameters and functions; chip testing verifies the performance and reliability of the chip after packaging; S505: Packaging: Obtain finished chips through wire bonding, molding, and printed circuit board assembly.

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