Environment temperature calculation method and device, electronic equipment, medium and product

Abstract

The embodiment of the invention provides an environment temperature calculation method and device, electronic equipment, a medium and a product, and relates to the technical field of temperature measurement, and the method comprises the steps: obtaining the equipment temperatures of specified equipment at a first historical moment and a current moment, and respectively taking the equipment temperatures as a first temperature and a second temperature, acquiring the time when the specified equipment is in a power-on state in a historical time period taking the current moment as the termination moment; calculating the temperature change rate at the current moment based on the difference between the first temperature and the second temperature; calculating a power-on state value at the current moment based on the acquired time in the power-on state in the historical time period; based on a predetermined mapping relation, calculating a temperature rise value at the current moment by using the temperature change rate and the startup state value of the specified equipment at the current moment; and the difference value between the second temperature and the temperature rise value at the current moment is calculated, and the environment temperature of the environment where the specified equipment is located at the current moment is obtained. The environment temperature of the environment where the specified equipment is located can be accurately calculated.

Description

Technical Field

[0001] The present application relates to the field of temperature measurement technology, and in particular to an ambient temperature calculation method, device, electronic equipment, medium and product. Background Art

[0002] In the field of temperature measurement technology, measuring the temperature of the environment in which electronic equipment is located (which can be referred to as ambient temperature) is of great significance in many scenarios. For example, in scenarios where precision electronic equipment exists, precision electronic equipment often has high requirements for ambient temperature, and it is necessary to measure the ambient temperature to monitor and adjust the ambient temperature to ensure that the precision electronic equipment operates at an appropriate ambient temperature; in some product production scenarios, the ambient temperature will affect the quality of the product, and it is necessary to measure the ambient temperature to ensure product quality; in temperature control scenarios, it is necessary to determine the direction of temperature adjustment in combination with the ambient temperature, such as for air conditioning systems, it is necessary to determine the working mode (cooling or heating) in combination with the ambient temperature; in high temperature scenarios, it is often necessary to use a pyrometer to measure the temperature of the object to be measured. In this scenario, the electronic device can be a pyrometer, and the electronic device can be placed close to the object to be measured to obtain the temperature of the object to be measured by measuring the ambient temperature of the electronic device; in some other scenarios, the performance and life of electronic equipment are often affected by the ambient temperature, and it is possible to design a suitable heat dissipation system for the electronic equipment in combination with the ambient temperature to effectively prevent the electronic equipment from being degraded or damaged due to overheating. For example, the computer's CPU (Central Processing Unit) generates heat during operation. Combined with the ambient temperature, the size of the heat sink, fan speed, etc. can be reasonably designed.

[0003] Therefore, how to accurately calculate the ambient temperature of the environment where the electronic equipment is located becomes an urgent problem to be solved. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide an ambient temperature calculation method, device, electronic device, medium and product to accurately calculate the ambient temperature of the environment where a specified device is located. The specific technical solution is as follows:

[0005] In a first aspect of the present application, a method for calculating ambient temperature is provided, the method comprising:

[0006] Obtain device temperatures of a specified device at a first historical moment and a current moment, respectively as a first temperature and a second temperature, and obtain a time during which the specified device is in a powered-on state within a historical time period with the current moment as the end moment;

[0007] Calculating a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature;

[0008] Based on the acquired time in the power-on state during the historical time period, the power-on state value of the designated device at the current moment is calculated; wherein the power-on state value of the designated device indicates: the length of time the designated device is in the power-on state during the historical time period;

[0009] Based on a predetermined mapping relationship between a temperature rise value, a temperature change rate, and a power-on status value, the temperature rise value of the designated device at the current moment is calculated using the temperature change rate and the power-on status value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate, and the power-on status value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device;

[0010] The difference between the second temperature and the temperature rise value of the designated device at the current moment is calculated to obtain the ambient temperature of the environment where the designated device is located at the current moment.

[0011] Optionally, the calculating the power-on state value of the specified device at the current moment based on the acquired time in the power-on state within the historical time period includes:

[0012] Based on the acquired time in the power-on state in the historical time period, determine the time duration that the specified device is in the power-on state in each sub-time period included in the historical time period as the power-on time duration corresponding to the sub-time period; wherein the sub-time periods do not have an intersection, and the union of the sub-time periods is the historical time period;

[0013] Calculate the ratio of each power-on duration to the duration of the corresponding sub-time period to obtain the power-on duration ratio of each sub-time period.

[0014] Based on the calculated proportions of each power-on time, the power-on status value of the specified device at the current moment is calculated.

[0015] Optionally, the calculating the power-on status value of the specified device at the current moment based on the calculated power-on duration ratios includes:

[0016] According to the preset weight of each sub-time period, the weighted sum of the power-on duration proportions corresponding to each sub-time period is calculated to obtain the power-on status value of the designated device at the current moment.

[0017] Optionally, for each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval duration of the sub-time period; the interval duration of a sub-time period represents the interval duration between the sub-time period and the current moment.

[0018] Optionally, the mapping relationship is determined by the following steps:

[0019] Obtaining temperature rise values, temperature change rates, and power-on status values ​​of the sample device at multiple second historical moments;

[0020] Based on the acquired temperature rise values, temperature change rates and power-on status values ​​at multiple second historical moments, function fitting is performed to obtain the mapping relationship.

[0021] Optionally, the calculating the temperature rise value of the designated device at the current moment based on a predetermined mapping relationship among the temperature rise value, the temperature change rate and the power-on state value, using the temperature change rate and the power-on state value of the designated device at the current moment, comprises:

[0022] The temperature change rate and power-on status value of the designated device at the current moment are input into a pre-trained mapping model to obtain the temperature rise value of the designated device at the current moment; wherein the mapping model is trained based on the temperature change rate, power-on status value and temperature rise value of the sample device at multiple second historical moments.

[0023] Optionally, the temperature rise values, temperature change rates and power-on status values ​​of the sample device at multiple second historical moments are obtained by the following steps:

[0024] For each second historical moment, obtaining the device temperature of the sample device at the third historical moment before the second historical moment and at the second historical moment, respectively as the third temperature and the fourth temperature, obtaining the ambient temperature of the environment where the sample device is located at the second historical moment, and obtaining the time that the sample device is in the power-on state within the sample time period with the second historical moment as the end moment;

[0025] Calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment to obtain the temperature rise value of the sample device at the second historical moment;

[0026] calculating the temperature change rate of the sample device at the second historical moment based on the difference between the third temperature and the fourth temperature;

[0027] Based on the acquired power-on time within the sample time period, the power-on state value of the sample device at the second historical moment is calculated; wherein the power-on state value of the sample device indicates: the length of time the sample device is in the power-on state within the sample time period.

[0028] Optionally, there are multiple first historical moments;

[0029] Calculating a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature includes:

[0030] For each first historical moment, calculating the temperature difference between the second temperature and the first temperature at the first historical moment, and calculating the interval between the current moment and the first historical moment;

[0031] The ratio of the calculated temperature difference to the interval time is used to obtain the temperature change rate corresponding to the first historical moment;

[0032] Based on the temperature change rates corresponding to the first historical moments, the temperature change rate of the designated device at the current moment is determined.

[0033] In a second aspect of the present application, there is also provided an ambient temperature calculation device, the device comprising:

[0034] A data acquisition module, used to acquire the device temperature of the specified device at a first historical moment and a current moment, as the first temperature and the second temperature respectively, and to acquire the time during which the specified device is in a powered-on state within a historical time period with the current moment as the end moment;

[0035] a temperature change rate calculation module, configured to calculate a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature;

[0036] A power-on status value calculation module, used to calculate the power-on status value of the specified device at the current moment based on the acquired time in the power-on status during the historical time period; wherein the power-on status value of the specified device indicates: the length of time the specified device is in the power-on status during the historical time period;

[0037] a temperature rise value calculation module, for calculating the temperature rise value of the designated device at the current moment based on a predetermined mapping relationship between the temperature rise value, the temperature change rate and the power-on state value, and using the temperature change rate and the power-on state value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate and the power-on state value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device;

[0038] The ambient temperature calculation module is used to calculate the difference between the second temperature and the temperature rise value of the designated device at the current moment, and obtain the ambient temperature of the environment where the designated device is located at the current moment.

[0039] Optionally, the power-on status value calculation module includes:

[0040] A power-on duration determination submodule, configured to determine, based on the acquired power-on time in the historical time period, the time that the designated device is in the power-on state in each sub-time period included in the historical time period as the power-on duration corresponding to the sub-time period; wherein the sub-time periods do not have an intersection, and the union of the sub-time periods is the historical time period;

[0041] The power-on duration ratio calculation submodule is used to calculate the ratio of each power-on duration to the duration of the corresponding sub-time period, and obtain the power-on duration ratio corresponding to each sub-time period;

[0042] The power-on status value calculation submodule is used to calculate the power-on status value of the specified device at the current moment based on the calculated proportions of each power-on time.

[0043] Optionally, the power-on status value calculation submodule is specifically used to calculate the weighted sum of the power-on duration proportions corresponding to each sub-time period according to the preset weight of each sub-time period, so as to obtain the power-on status value of the designated device at the current moment.

[0044] Optionally, for each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval duration of the sub-time period; the interval duration of a sub-time period represents the interval duration between the sub-time period and the current moment.

[0045] Optionally, the mapping relationship is determined by the following steps:

[0046] Obtaining temperature rise values, temperature change rates, and power-on status values ​​of the sample device at multiple second historical moments;

[0047] Based on the acquired temperature rise values, temperature change rates and power-on status values ​​at multiple second historical moments, function fitting is performed to obtain the mapping relationship.

[0048] Optionally, the temperature rise value calculation module is specifically used to input the temperature change rate and power-on status value of the designated device at the current moment into a pre-trained mapping model to obtain the temperature rise value of the designated device at the current moment; wherein the mapping model is trained based on the temperature change rate, power-on status value and temperature rise value of the sample device at multiple second historical moments.

[0049] Optionally, the device further comprises:

[0050] A sample acquisition module is used to obtain, for each second historical moment, the device temperature of the sample device at the third historical moment before the second historical moment and the device temperature of the second historical moment, respectively as the third temperature and the fourth temperature, and obtain the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the time that the sample device is in the power-on state during a sample time period with the second historical moment as the end moment; calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the temperature rise value of the sample device at the second historical moment; calculate the temperature change rate of the sample device at the second historical moment based on the difference between the third temperature and the fourth temperature; calculate the power-on state value of the sample device at the second historical moment based on the acquired power-on time during the sample time period; wherein the power-on state value of the sample device represents: the length of time that the sample device is in the power-on state during the sample time period.

[0051] Optionally, there are multiple first historical moments; the temperature change rate calculation module is specifically used to calculate, for each first historical moment, the temperature difference between the second temperature and the first temperature of the first historical moment, and to calculate the interval duration between the current moment and the first historical moment; the ratio of the calculated temperature difference to the interval duration is used to obtain the temperature change rate corresponding to the first historical moment; based on the temperature change rates corresponding to each first historical moment, the temperature change rate of the designated device at the current moment is determined.

[0052] According to a third aspect of the present application, there is also provided an electronic device, including:

[0053] Memory, used to store computer programs;

[0054] The processor is used to implement any of the above-mentioned ambient temperature calculation methods when executing the program stored in the memory.

[0055] An embodiment of the present application further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, any of the above-mentioned ambient temperature calculation methods is implemented.

[0056] An embodiment of the present application also provides a computer program product comprising instructions, which, when executed on a computer, enables the computer to execute any of the above-mentioned ambient temperature calculation methods.

[0057] Beneficial effects of the embodiments of the present application:

[0058] An ambient temperature calculation method provided by an embodiment of the present application can obtain the device temperature of a specified device at a first historical moment and a current moment, respectively as a first temperature and a second temperature, and obtain the time that the specified device is in a power-on state in a historical time period with the current moment as the end moment; based on the difference between the first temperature and the second temperature, calculate the temperature change rate of the specified device at the current moment; based on the acquired time in the power-on state in the historical time period, calculate the power-on state value of the specified device at the current moment; wherein the power-on state value of the specified device represents: the length of time that the specified device is in the power-on state in the historical time period; based on a predetermined mapping relationship between a temperature rise value, a temperature change rate and a power-on state value, the temperature rise value of the specified device at the current moment is calculated using the temperature change rate and the power-on state value of the specified device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate and the power-on state value of a sample device at the second historical moment; the model of the sample device is the same as that of the specified device; the difference between the second temperature and the temperature rise value of the specified device at the current moment is calculated to obtain the ambient temperature of the environment where the specified device is located at the current moment.

[0059] Based on the above processing, the device temperature (i.e., the first temperature) of the specified device at the historical moment before the current moment (i.e., the first historical moment) and the device temperature at the current moment (i.e., the second temperature) can be obtained. The temperature change rate of the specified device at the current moment can be calculated based on the difference between the second temperature and the first temperature. The time that the specified device is in the power-on state in the historical time period with the current moment as the end moment can also be obtained, so as to calculate the power-on state value representing the length of time that the specified device is in the power-on state in the historical time period based on the obtained data.

[0060] The temperature rise value of the designated device at any time can be expressed as: the difference between the device temperature of the designated device at that time and the ambient temperature of the environment in which it is located. Since the designated device generates heat when it is in the power-on state, the length of time the designated device is in the power-on state before any time will affect the device temperature of the designated device at that time, and will also affect the temperature rise value of the designated device at that time. That is, the temperature rise value of the designated device at any time is related to the length of time the designated device is in the power-on state before that time. And the temperature change rate of the designated device at any time can indicate how fast the device temperature of the designated device changes, and can also indicate how fast the temperature rise value changes. That is, the temperature rise value of the designated device at any time is related to the temperature change rate of the designated device at that time. That is, there is a mapping relationship between the temperature rise value at any time, the temperature change rate at that time, and the power-on state value at that time. The mapping relationship can be predetermined, and accordingly, the temperature rise value of the designated device at the current time can be calculated according to the mapping relationship and the temperature change rate and the power-on state value of the designated device at the current time. Furthermore, by calculating the difference between the device temperature (ie, the second temperature) of the designated device at the current moment and the temperature rise value, the ambient temperature of the environment where the designated device is located at the current moment can be obtained. In this way, the ambient temperature of the environment where the designated device is located can be accurately calculated.

[0061] Of course, implementing any product or method of the present application does not necessarily require achieving all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0063] Figure 1 A schematic diagram of a first flow chart of an ambient temperature calculation method provided in an embodiment of the present application;

[0064] Figure 2 A second flow chart of the ambient temperature calculation method provided in the embodiment of the present application;

[0065] Figure 3 A schematic diagram of a process for determining a mapping relationship in the ambient temperature calculation method provided in an embodiment of the present application;

[0066] Figure 4 A third flow chart of the ambient temperature calculation method provided in the embodiment of the present application;

[0067] Figure 5 A schematic diagram of the structure of an ambient temperature calculation device provided in an embodiment of the present application;

[0068] Figure 6 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0069] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field based on the present application belong to the scope of protection of the present application.

[0070] In the field of temperature measurement technology, measuring the ambient temperature of electronic equipment is of great significance in many scenarios. For example, in scenarios where precision electronic equipment exists, it is often necessary to measure the ambient temperature of precision electronic equipment to ensure that the precision electronic equipment operates at an appropriate ambient temperature; in production scenarios of some products that are easily affected by ambient temperature, it is necessary to measure the ambient temperature to ensure product quality; in temperature control scenarios, it is necessary to determine the direction of temperature adjustment in combination with the ambient temperature; in high temperature scenarios, the electronic equipment can be a pyrometer, which can bring the electronic equipment close to the object to be measured so as to obtain the temperature of the object to be measured by measuring the ambient temperature of the electronic equipment; in some other scenarios, the ambient temperature can be combined to design a suitable heat dissipation system for the electronic equipment to prevent the electronic equipment from overheating and causing performance degradation or damage.

[0071] In order to accurately calculate the ambient temperature of the environment where the electronic device is located, the present application embodiment provides an ambient temperature calculation method, see Figure 1 , Figure 1 The first flow chart of the ambient temperature calculation method provided in the embodiment of the present application includes:

[0072] Step S101: obtaining the device temperature of the specified device at the first historical moment and the current moment, respectively as the first temperature and the second temperature, and obtaining the time that the specified device is in the power-on state in the historical time period with the current moment as the end moment.

[0073] Step S102: Calculate the temperature change rate of the designated device at the current moment based on the difference between the first temperature and the second temperature.

[0074] Step S103: Calculate the power-on status value of the specified device at the current moment based on the acquired power-on time in the historical time period.

[0075] The power-on status value of the specified device indicates the length of time the specified device is in the power-on status during the historical time period.

[0076] Step S104: based on the predetermined mapping relationship between the temperature rise value, the temperature change rate and the power-on status value, the temperature rise value of the designated device at the current moment is calculated using the temperature change rate and the power-on status value of the designated device at the current moment.

[0077] The mapping relationship is obtained based on the temperature rise value, temperature change rate and power-on status value of the sample device at the second historical moment; the model of the sample device is the same as that of the specified device.

[0078] Step S105: Calculate the difference between the second temperature and the temperature rise value of the designated device at the current moment to obtain the ambient temperature of the environment where the designated device is located at the current moment.

[0079] Based on the above processing, the device temperature (i.e., the first temperature) of the specified device at the historical moment before the current moment (i.e., the first historical moment) and the device temperature at the current moment (i.e., the second temperature) can be obtained. The temperature change rate of the specified device at the current moment can be calculated based on the difference between the second temperature and the first temperature. The time that the specified device is in the power-on state in the historical time period with the current moment as the end moment can also be obtained, so as to calculate the power-on state value representing the length of time that the specified device is in the power-on state in the historical time period based on the obtained data.

[0080] The temperature rise value of the designated device at any time can be expressed as: the difference between the device temperature of the designated device at that time and the ambient temperature of the environment in which it is located. Since the designated device generates heat when it is in the power-on state, the length of time the designated device is in the power-on state before any time will affect the device temperature of the designated device at that time, and will also affect the temperature rise value of the designated device at that time. That is, the temperature rise value of the designated device at any time is related to the length of time the designated device is in the power-on state before that time. And the temperature change rate of the designated device at any time can indicate how fast the device temperature of the designated device changes, and can also indicate how fast the temperature rise value changes. That is, the temperature rise value of the designated device at any time is related to the temperature change rate of the designated device at that time. That is, there is a mapping relationship between the temperature rise value at any time, the temperature change rate at that time, and the power-on state value at that time. The mapping relationship can be predetermined, and accordingly, the temperature rise value of the designated device at the current time can be calculated according to the mapping relationship and the temperature change rate and the power-on state value of the designated device at the current time. Furthermore, by calculating the difference between the device temperature (ie, the second temperature) of the designated device at the current moment and the temperature rise value, the ambient temperature of the environment where the designated device is located at the current moment can be obtained. In this way, the ambient temperature of the environment where the designated device is located can be accurately calculated.

[0081] For step S101, the designated device may be an electronic device that currently needs to determine the ambient temperature of the environment in which it is located. For example, the designated device may be a pyrometer, which may allow the designated device to be close to the object to be measured in a high temperature state, and accordingly, the ambient temperature of the environment in which the designated device is located is also the temperature of the object to be measured. That is, the temperature of the object to be measured may be measured by measuring the temperature of the environment in which the designated device is located; or, the designated device may also be a temperature control device, such as a TEC (ThermoElectric Cooler), and the designated device may measure the ambient temperature of the environment in which the designated device is located to achieve a specific function through the temperature control device, such as a temperature adjustment function (such as cooling or heating), a switch function, or an alarm function. One or more historical moments before the current moment may be pre-selected as the first historical moment. The interval between the first historical moment and the current moment may be a first preset duration. The first preset duration may be set as needed and is not specifically limited. For example, the first preset duration may be 10 seconds or 15 seconds.

[0082] The device temperature of the specified device at the first historical moment can be obtained as the first temperature, and the device temperature of the specified device at the current moment can be obtained as the second temperature. For example, a temperature sensor for measuring the device temperature of the specified device can be provided inside the specified device. Accordingly, the device temperature measured by the temperature sensor at the first historical moment can be obtained to obtain the first temperature, and the device temperature measured at the current moment can be obtained to obtain the second temperature. In other words, the internal temperature (i.e., cavity temperature) obtained according to the above scheme can be used as the temperature of the device.

[0083] And a historical time period with the current moment as the end moment can be predetermined, and the interval between the start moment of the historical time period and the current moment can be a second preset time period. The second preset time period can be set as needed and is not specifically limited. For example, the second preset time period can be 1 hour or 2 hours. And the historical power-on data of the specified device in the historical time period can be obtained, that is, the time when the specified device is in the power-on state in the historical time period is obtained. For example, the time when the specified device is powered on and powered off in the historical time period can be obtained, and accordingly, according to the obtained power-on and power-off moments, the time when the specified device is in the power-on state in the historical time period can be determined.

[0084] For step S102, the difference between the first temperature and the second temperature can reflect: the change in the device temperature of the specified device from the first historical moment to the current moment. According to the difference between the first temperature and the second temperature, combined with the time interval between the first historical moment and the current moment, the temperature change rate (also called temperature change rate) of the specified device at the current moment can be calculated.

[0085] When there is only one first historical moment, the temperature difference between the first temperature and the second temperature and the time interval between the first historical moment and the current moment can be calculated, and the ratio of the obtained temperature difference and the time interval can be calculated to obtain the temperature change rate of the specified device at the current moment.

[0086] In the case where there are multiple first historical moments, step S102 may include:

[0087] Step 1: For each first historical moment, calculate the temperature difference between the second temperature and the first temperature at the first historical moment, and calculate the interval between the current moment and the first historical moment.

[0088] Step 2: Calculate the ratio of the temperature difference to the interval time to obtain the temperature change rate corresponding to the first historical moment.

[0089] Step 3: Based on the temperature change rates corresponding to each first historical moment, determine the temperature change rate of the specified device at the current moment.

[0090] In this case, for each first historical moment, the temperature difference between the second temperature and the first temperature of the first historical moment can be calculated, as well as the interval duration between the current moment and the first historical moment. The ratio of the calculated temperature difference to the interval duration is used to obtain the temperature change rate corresponding to the first historical moment. Furthermore, the temperature change rate of the designated device at the current moment can be determined based on the temperature change rates corresponding to each first historical moment. For example, the weighted sum of the temperature change rates corresponding to each first historical moment can be calculated to obtain the temperature change rate of the designated device at the current moment, and the weight of the temperature change rate corresponding to each first historical moment can be negatively correlated with the interval duration from the first historical moment to the current moment. Alternatively, the average value of the temperature change rates corresponding to each first historical moment can be calculated, and the calculated average value can be used as the temperature change rate of the designated device at the current moment.

[0091] In this way, the temperature change rate of the designated device at the current moment can be determined by combining the temperature change conditions from multiple first historical moments to the current moment. Compared with the method of determining the temperature change rate of the designated device at the current moment by using only the temperature change conditions from one first historical moment to the current moment, the accuracy of the obtained temperature change rate of the designated device at the current moment can be improved, and the accuracy of the subsequent calculation of the temperature rise value of the designated device at the current moment based on the temperature change rate of the designated device at the current moment can also be improved. Furthermore, the accuracy of calculating the ambient temperature of the environment where the designated device is located at the current moment based on the temperature rise value of the designated device at the current moment can also be improved, further ensuring that the ambient temperature of the environment where the designated device is located can be accurately calculated.

[0092] For step S103, the time that the specified device was in the power-on state during the historical time period can be determined based on the acquired time that the specified device was in the power-on state during the historical time period, and the power-on state value representing the length of time the specified device was in the power-on state during the historical time period can be calculated.

[0093] In one implementation, the ratio of the duration of the power-on state of the specified device in the historical time period to the duration of the historical time period may be directly calculated to obtain the power-on state value of the specified device at the current moment.

[0094] In another implementation, the historical time period may be pre-divided into multiple sub-time periods, and the power-on status value of the specified device at the current moment may be calculated based on the proportion of the time that the specified device is in the power-on state in the multiple sub-time periods. For details, please refer to the relevant description of steps S1031 to S1033 in the subsequent embodiments.

[0095] For step S104, a sample device of the same model as the designated device can be pre-selected, and the temperature rise value, temperature change rate and power-on status value of the sample device at multiple second historical moments can be obtained. The second historical moment can be selected as needed and is not specifically limited. For the specific acquisition method, reference can be made to the relevant descriptions of steps 1 to 4 in the subsequent embodiments. Furthermore, based on the temperature rise value, temperature change rate and power-on status value of the sample device at multiple second historical moments, the mapping relationship between the temperature rise value, temperature change rate and power-on status value can be determined. Correspondingly, based on the mapping relationship, the temperature change rate and power-on status value of the designated device at the current moment can also be calculated. For details, reference can be made to the relevant descriptions of method one and method two in the subsequent embodiments.

[0096] For step S105, the temperature rise value of the designated device at any time can be represented by: the difference between the device temperature of the designated device at that time and the ambient temperature of the environment in which it is located. Accordingly, the difference between the device temperature (i.e., the second temperature) of the designated device at the current time and the temperature rise value can be calculated to obtain the ambient temperature of the environment in which the designated device is located at the current time.

[0097] Accordingly, when the designated device is a precision electronic device with high requirements for the ambient temperature, the ambient temperature can be combined with the obtained ambient temperature to monitor and adjust the ambient temperature to ensure that the designated device operates at an appropriate ambient temperature. In the production scenarios of some products whose quality is easily affected by the ambient temperature, the obtained ambient temperature can also ensure the quality of the product. In the temperature control scenario, the relationship between the obtained ambient temperature and the currently set standard temperature can be combined to determine whether cooling or heating is currently required. When the designated device is a high temperature timer, the obtained ambient temperature is the temperature of the currently measured high-temperature object. In some other scenarios, the obtained ambient temperature can also be combined to design a suitable heat dissipation system for the designated device to prevent the performance of the designated device from being degraded or damaged due to overheating.

[0098] In one embodiment, see Figure 2 , Figure 2 The second flow chart of the ambient temperature calculation method provided in the embodiment of the present application, step S103 includes:

[0099] Step S1031: Based on the acquired power-on time in the historical time period, determine the power-on time of the specified device in each sub-time period included in the historical time period as the power-on time corresponding to the sub-time period.

[0100] Among them, there is no intersection among the sub-time periods, and the union of the sub-time periods is the historical time period.

[0101] Step S1032: Calculate the ratio of each power-on duration to the duration of the corresponding sub-time period to obtain the power-on duration ratio corresponding to each sub-time period.

[0102] Step S1033: Based on the calculated proportions of each power-on time, calculate the power-on status value of the specified device at the current moment.

[0103] In an embodiment of the present application, the historical time period can be pre-divided into multiple sub-time periods. There is no intersection between the sub-time periods, and the union of the sub-time periods is the historical time period. The duration of each sub-time period can be set as needed without specific limitation. For example, the historical time period can be from 9:00 to 10:00, and the historical time period can be divided into 6 sub-time periods with the same duration, namely [10:00, 9:50], [9:50, 9:40], ..., [9:10, 9:00]; or, the historical time period can be divided into 5 sub-time periods with different durations, namely [10:00, 9:45], [9:45, 9:32], [9:32, 9:21], [9:21, 9:09], [9:09, 9:00]. The duration of each sub-time period can be the same or different.

[0104] For each sub-time period, the duration of the specified device being powered on in the sub-time period can be determined based on the time that the specified device was powered on in the historical time period, as the power-on duration corresponding to the sub-time period. Furthermore, the ratio of each power-on duration to the duration of the corresponding sub-time period can be calculated to obtain the power-on duration ratio corresponding to each sub-time period. Combined with the calculated power-on duration ratios, the power-on status value of the specified device at the current moment can be calculated.

[0105] In one implementation, the median of each power-on time ratio may be selected as the power-on status value of the specified device at the current moment.

[0106] In another implementation, the maximum and minimum values ​​of the calculated power-on time proportions may be removed, and then the average values ​​of the remaining power-on time proportions may be calculated to obtain the power-on status value of the specified device at the current moment.

[0107] In another implementation, step S1033 includes: calculating the weighted sum of the power-on duration proportions corresponding to each sub-time period according to the preset weights of each sub-time period, and obtaining the power-on status value of the specified device at the current moment.

[0108] In this implementation, the preset weight of each sub-time period can be obtained in advance, so as to calculate the weighted sum of the power-on duration proportions corresponding to each sub-time period according to the preset weight of each sub-time period, and obtain the power-on status value of the specified device at the current moment. The preset weights of each sub-time period can be the same, that is, the average value of the power-on duration proportions corresponding to each sub-time period can be calculated as the power-on status value of the specified device at the current moment.

[0109] Alternatively, for each sub-time period, the preset weight of the sub-time period may be set according to the duration of the sub-time period, and / or the interval between the sub-time period and the current moment (also referred to as the interval of the sub-time period). For example, for each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval of the sub-time period. The shorter the interval of a sub-time period, the closer the sub-time period is to the current moment, and the proportion of the power-on time of the sub-time period can better reflect the power-on status value of the specified device at the current moment. The longer the duration of a sub-time period, the greater the proportion of the sub-time period in the historical time period, and accordingly, the closer the sub-time period is to the current moment, the better it can reflect the length of time that the specified device is in the power-on state in the historical time period, and accordingly, the better it can reflect the power-on status value of the specified device at the current moment.

[0110] In this way, by combining the duration and interval of each sub-time period, determining the preset weight of the sub-time period, the accuracy of calculating the power-on status value of the specified device at the current moment can be improved. Furthermore, the accuracy of subsequently calculating the temperature rise value of the specified device at the current moment based on the power-on status value of the specified device at the current moment can be improved. Furthermore, the accuracy of calculating the ambient temperature of the environment where the specified device is located at the current moment based on the temperature rise value of the specified device at the current moment can be improved, further ensuring that the ambient temperature of the environment where the specified device is located can be accurately calculated.

[0111] For example, the weighted sum of the power-on duration ratios corresponding to each sub-time period can be calculated according to a preset formula to obtain the power-on status value of the specified device at the current moment. The preset formula is as follows:

[0112]

[0113] in, Indicates the power-on status value of the specified device at the current moment. Indicates the current moment, Indicates the starting time of the historical time period; in chronological order from the last to the first, , , …, Respectively represent multiple moments before the current moment and within the historical time period. Correspondingly, , , …, Respectively represent multiple sub-time periods contained in the historical time period; , , …, Respectively , , …, The preset weights of the sub-time periods, , , …, Respectively , , …, The power-on duration corresponding to the sub-time period.

[0114] In one embodiment of the present application, the mapping relationship between the temperature rise value, the temperature change rate and the power-on status value can be determined in the following two ways:

[0115] In method 1, the mapping relationship can be obtained by performing function fitting. Figure 3 , Figure 3 A flow chart of determining a mapping relationship in the ambient temperature calculation method provided in an embodiment of the present application. The mapping relationship is determined by the following steps:

[0116] Step S301: obtaining temperature rise values, temperature change rates and power-on status values ​​of sample devices at multiple second historical moments.

[0117] Step S302: performing function fitting based on the temperature rise values, temperature change rates and power-on status values ​​acquired at multiple second historical moments to obtain a mapping relationship.

[0118] In this way, the temperature rise value, temperature change rate and power-on status value of the sample device at multiple second historical moments can be obtained, and the obtained data can be used to perform function fitting to obtain a mapping relationship. For example, for each second historical moment, the temperature change rate and power-on status value of the sample device at the second historical moment can be used as independent variables, and the temperature rise value of the sample device at the second historical moment can be used as a dependent variable, and function fitting can be performed according to a preset function relationship to obtain a mapping relationship. The preset function relationship can be set as needed and is not specifically limited. For example, the preset function relationship can be a binary quadratic function or a binary linear function.

[0119] The mapping relationship can be expressed by the following formula:

[0120]

[0121] in, Indicates the temperature rise value of a specified device at a moment. Indicates the power-on status value of the specified device at that moment. Indicates the temperature change rate of the specified device at that moment.

[0122] Based on the above processing, the mapping relationship can be determined by function fitting. In this way, it can be ensured that the temperature rise value of the specified device at the current moment can be calculated based on the mapping relationship and the temperature change rate and the power-on state value of the specified device at the current moment. Furthermore, it can be ensured that the ambient temperature of the environment where the specified device is located at the current moment can be calculated based on the temperature rise value of the specified device at the current moment. That is, it is further ensured that the ambient temperature of the environment where the specified device is located can be accurately calculated.

[0123] In the second method, step S104 includes: inputting the temperature change rate and the power-on status value of the designated device at the current moment into a pre-trained mapping model to obtain the temperature rise value of the designated device at the current moment.

[0124] The mapping model is obtained by training based on the temperature change rate, power-on state value and temperature rise value of the sample device at multiple second historical moments.

[0125] In this way, the mapping model of the initial structure can be trained in advance using the temperature change rate, power-on state value and temperature rise value (also referred to as the real temperature rise value) of the sample device at multiple second historical moments to obtain a trained mapping model. For example, for each second historical moment, the temperature change rate and power-on state value of the second historical moment can be input into the mapping model of the initial structure to obtain the predicted temperature rise value of the second historical moment. Based on the difference between the predicted temperature rise value obtained and the real temperature rise value of the corresponding second historical moment, the parameters of the mapping model of the initial structure are adjusted until the preset convergence condition is reached to obtain the trained mapping model. For example, the preset convergence condition can be that the number of times the parameters of the mapping model are adjusted reaches a preset number, or the preset convergence condition can also be that the difference between the predicted temperature rise value obtained and the temperature rise value of the corresponding second historical moment is less than the preset difference. The mapping model can be selected as needed without specific limitation. For example, the mapping model can be a deep learning model, such as CNN (Convolutional Neural Networks) or RNN (Recurrent Neural Network). The trained mapping model can also represent the mapping relationship.

[0126] Based on the above processing, the mapping relationship can be determined by using the model training method. Since the mapping model has a multi-layer structure and can approximate complex nonlinear functions, the mapping relationship determined by the model training method can better reflect the correlation between the temperature change rate, the power-on state value and the temperature rise value compared to the function fitting method, that is, the accuracy of the obtained mapping relationship can be further improved. In this way, it can be ensured that the temperature rise value of the specified device at the current moment can be calculated based on a more accurate mapping relationship using the temperature change rate and the power-on state value of the specified device at the current moment. Furthermore, it can also be ensured that the ambient temperature of the environment where the specified device is located at the current moment can be calculated based on the temperature rise value of the specified device at the current moment. That is, it is further ensured that the ambient temperature of the environment where the specified device is located can be accurately calculated.

[0127] In this application, the temperature rise values, temperature change rates and power-on status values ​​of the sample device at multiple second historical moments can be obtained by the following steps:

[0128] Step 1: For each second historical moment, obtain the device temperature of the sample device at the third historical moment before the second historical moment and at the second historical moment, as the third temperature and the fourth temperature, respectively, and obtain the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the time that the sample device is in the power-on state within the sample time period with the second historical moment as the end moment.

[0129] Step 2: Calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the temperature rise value of the sample device at the second historical moment.

[0130] Step 3: Based on the difference between the third temperature and the fourth temperature, calculate the temperature change rate of the sample device at the second historical moment.

[0131] Step 4: Based on the acquired time of being in the power-on state during the sample time period, calculate the power-on state value of the sample device at the second historical moment.

[0132] The power-on status value of the sample device indicates the length of time the sample device is in the power-on status during the sample time period.

[0133] In the embodiment of the present application, for each second historical moment, one or more historical moments before the second historical moment can be pre-selected as the third historical moment. The device temperature of the specified device at the third historical moment can be obtained as the third temperature, and the device temperature of the specified device at the second historical moment can be obtained as the fourth temperature. And a sample time period with the second historical moment as the end moment can be pre-determined, and the time when the specified device is in the power-on state within the sample time period can be obtained. For details, please refer to the relevant description of step S101 in the above embodiment.

[0134] And the ambient temperature of the environment where the sample device is located at the second historical moment can be obtained. For example, the ambient temperature of the environment where the sample device is located at the second historical moment can be measured using a temperature measuring device. Furthermore, the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment can be calculated to obtain the temperature rise value of the sample device at the second historical moment. For step 3, the relevant description of step S102 in the above embodiment can be referred to. For step 4, the relevant description of step S103 in the above embodiment can be referred to.

[0135] Based on the above processing, the temperature rise value, temperature change rate and power-on status value of the sample device at multiple second historical moments can be obtained, and it can be ensured that the mapping relationship can be determined based on the acquired data. In this way, it can be ensured that the temperature rise value of the specified device at the current moment can be calculated based on the mapping relationship, using the temperature change rate and power-on status value of the specified device at the current moment. Furthermore, it can be ensured that the ambient temperature of the environment where the specified device is located at the current moment can be calculated based on the temperature rise value of the specified device at the current moment. That is, it is further ensured that the ambient temperature of the environment where the specified device is located can be accurately calculated.

[0136] In one embodiment, see Figure 4 , Figure 4A third flow chart of the ambient temperature calculation method provided in the embodiment of the present application. The ambient temperature calculation method may include:

[0137] Step S401: Acquire historical cavity temperature data and historical startup data of the device, that is, step S101 in the above embodiment.

[0138] Step S402: Calculate the temperature change rate and power-on status of the device at the current moment, that is, step S102 and step S103 in the above embodiment.

[0139] Step S403: Calculate the actual temperature rise value of the device according to the temperature change rate and the power-on state of the device, that is, step S104 in the above embodiment.

[0140] Step S404: Calculate the current ambient temperature value according to the current cavity temperature of the device and the actual temperature rise value, that is, step S105 in the above embodiment.

[0141] Based on the same inventive concept, the present application also provides an ambient temperature calculation device, Figure 5 , Figure 5 The following is a schematic diagram of the structure of an ambient temperature calculation device provided in an embodiment of the present application. The ambient temperature calculation device includes:

[0142] The data acquisition module 501 is used to acquire the device temperature of the specified device at the first historical moment and the current moment, respectively as the first temperature and the second temperature, and acquire the time that the specified device is in the power-on state within the historical time period with the current moment as the end moment;

[0143] A temperature change rate calculation module 502, configured to calculate a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature;

[0144] The power-on status value calculation module 503 is used to calculate the power-on status value of the specified device at the current moment based on the acquired power-on time in the historical time period; wherein the power-on status value of the specified device indicates: the length of time the specified device is in the power-on state in the historical time period;

[0145] The temperature rise value calculation module 504 is used to calculate the temperature rise value of the designated device at the current moment based on the predetermined mapping relationship between the temperature rise value, the temperature change rate and the power-on state value, and using the temperature change rate and the power-on state value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate and the power-on state value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device;

[0146] The ambient temperature calculation module 505 is used to calculate the difference between the second temperature and the temperature rise value of the designated device at the current moment, and obtain the ambient temperature of the environment where the designated device is located at the current moment.

[0147] Based on the ambient temperature calculation device provided in the embodiment of the present application, the device temperature (i.e., the first temperature) of the specified device at the historical moment (i.e., the first historical moment) before the current moment, and the device temperature (i.e., the second temperature) at the current moment can be obtained. It is also possible to calculate the temperature change rate of the specified device at the current moment based on the difference between the second temperature and the first temperature. It is also possible to obtain the time that the specified device is in the power-on state in the historical time period with the current moment as the end moment, so as to calculate the power-on state value representing the length of time that the specified device is in the power-on state in the historical time period based on the obtained data.

[0148] The temperature rise value of the designated device at any time can be expressed as: the difference between the device temperature of the designated device at that time and the ambient temperature of the environment in which it is located. Since the designated device generates heat when it is in the power-on state, the length of time the designated device is in the power-on state before any time will affect the device temperature of the designated device at that time, and will also affect the temperature rise value of the designated device at that time. That is, the temperature rise value of the designated device at any time is related to the length of time the designated device is in the power-on state before that time. And the temperature change rate of the designated device at any time can indicate how fast the device temperature of the designated device changes, and can also indicate how fast the temperature rise value changes. That is, the temperature rise value of the designated device at any time is related to the temperature change rate of the designated device at that time. That is, there is a mapping relationship between the temperature rise value at any time, the temperature change rate at that time, and the power-on state value at that time. The mapping relationship can be predetermined, and accordingly, the temperature rise value of the designated device at the current time can be calculated according to the mapping relationship and the temperature change rate and the power-on state value of the designated device at the current time. Furthermore, by calculating the difference between the device temperature (ie, the second temperature) of the designated device at the current moment and the temperature rise value, the ambient temperature of the environment where the designated device is located at the current moment can be obtained. In this way, the ambient temperature of the environment where the designated device is located can be accurately calculated.

[0149] In one embodiment, the power-on status value calculation module 503 includes:

[0150] A power-on duration determination submodule, configured to determine, based on the acquired power-on time in the historical time period, the time that the designated device is in the power-on state in each sub-time period included in the historical time period as the power-on duration corresponding to the sub-time period; wherein the sub-time periods do not have an intersection, and the union of the sub-time periods is the historical time period;

[0151] The power-on duration ratio calculation submodule is used to calculate the ratio of each power-on duration to the duration of the corresponding sub-time period, and obtain the power-on duration ratio corresponding to each sub-time period;

[0152] The power-on status value calculation submodule is used to calculate the power-on status value of the specified device at the current moment based on the calculated proportions of each power-on time.

[0153] In one embodiment, the power-on status value calculation submodule is specifically used to calculate the weighted sum of the power-on duration proportions corresponding to each sub-time period according to the preset weights of each sub-time period, so as to obtain the power-on status value of the designated device at the current moment.

[0154] In one embodiment, for each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval duration of the sub-time period; the interval duration of a sub-time period represents the interval duration between the sub-time period and the current moment.

[0155] In one embodiment, the mapping relationship is determined by the following steps:

[0156] Obtaining temperature rise values, temperature change rates, and power-on status values ​​of the sample device at multiple second historical moments;

[0157] Based on the acquired temperature rise values, temperature change rates and power-on status values ​​at multiple second historical moments, function fitting is performed to obtain the mapping relationship.

[0158] In one embodiment, the temperature rise value calculation module 504 is specifically used to input the temperature change rate and power-on status value of the specified device at the current moment into a pre-trained mapping model to obtain the temperature rise value of the specified device at the current moment; wherein the mapping model is trained based on the temperature change rate, power-on status value and temperature rise value of the sample device at multiple second historical moments.

[0159] In one embodiment, the apparatus further comprises:

[0160] A sample acquisition module is used to obtain, for each second historical moment, the device temperature of the sample device at the third historical moment before the second historical moment and the device temperature of the second historical moment, respectively as the third temperature and the fourth temperature, and obtain the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the time that the sample device is in the power-on state during a sample time period with the second historical moment as the end moment; calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the temperature rise value of the sample device at the second historical moment; calculate the temperature change rate of the sample device at the second historical moment based on the difference between the third temperature and the fourth temperature; calculate the power-on state value of the sample device at the second historical moment based on the acquired power-on time during the sample time period; wherein the power-on state value of the sample device represents: the length of time that the sample device is in the power-on state during the sample time period.

[0161] In one embodiment, there are multiple first historical moments; the temperature change rate calculation module 502 is specifically used to calculate, for each first historical moment, the temperature difference between the second temperature and the first temperature of the first historical moment, and to calculate the interval duration between the current moment and the first historical moment; the ratio of the calculated temperature difference to the interval duration is used to obtain the temperature change rate corresponding to the first historical moment; based on the temperature change rates corresponding to each first historical moment, the temperature change rate of the designated device at the current moment is determined.

[0162] The present application also provides an electronic device, such as Figure 6 As shown, including:

[0163] Memory 601, used for storing computer programs;

[0164] The processor 602 is used to execute the program stored in the memory 601 to implement the following steps:

[0165] Obtain device temperatures of a specified device at a first historical moment and a current moment, respectively as a first temperature and a second temperature, and obtain a time during which the specified device is in a powered-on state within a historical time period with the current moment as the end moment;

[0166] Calculating a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature;

[0167] Based on the acquired time in the power-on state during the historical time period, the power-on state value of the designated device at the current moment is calculated; wherein the power-on state value of the designated device indicates: the length of time the designated device is in the power-on state during the historical time period;

[0168] Based on a predetermined mapping relationship between a temperature rise value, a temperature change rate, and a power-on status value, the temperature rise value of the designated device at the current moment is calculated using the temperature change rate and the power-on status value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate, and the power-on status value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device;

[0169] The difference between the second temperature and the temperature rise value of the designated device at the current moment is calculated to obtain the ambient temperature of the environment where the designated device is located at the current moment.

[0170] Furthermore, the electronic device may further include a communication bus and / or a communication interface, and the processor 602, the communication interface, and the memory 601 communicate with each other via the communication bus.

[0171] The communication bus mentioned in the above electronic device can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The communication bus can be divided into an address bus, a data bus, a control bus, etc. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus.

[0172] The communication interface is used for communication between the above electronic device and other devices.

[0173] The memory may include a random access memory (RAM) or a non-volatile memory (NVM), such as at least one disk memory. Optionally, the memory may also be at least one storage device located away from the aforementioned processor.

[0174] The above-mentioned processor can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0175] In another embodiment provided in the present application, a computer-readable storage medium is provided, in which a computer program is stored. When the computer program is executed by a processor, the steps of any of the above-mentioned ambient temperature calculation methods are implemented.

[0176] In another embodiment provided in the present application, a computer program product including instructions is also provided, which, when executed on a computer, enables the computer to execute any of the ambient temperature calculation methods in the above embodiments.

[0177] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the process or function described in the embodiment of the present application is generated in whole or in part. The computer may be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions may be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the computer instructions may be transmitted from a website site, computer, server or data center to another website site, computer, server or data center by wired (e.g., coaxial cable, optical fiber, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium may be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more available media integrated. The available medium may be a magnetic medium (e.g., a floppy disk, a hard disk, a tape), an optical medium (e.g., a DVD), or a solid-state hard disk (SSD), etc.

[0178] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0179] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the device, electronic device, computer-readable storage medium, and computer program product embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiments.

[0180] The above description is only a preferred embodiment of the present application and is not intended to limit the protection scope of the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application are included in the protection scope of the present application.

Claims

1. A method for calculating ambient temperature, characterized in that: The method comprises: Obtain device temperatures of a specified device at a first historical moment and a current moment, respectively as a first temperature and a second temperature, and obtain a time during which the specified device is in a powered-on state within a historical time period with the current moment as the end moment; Calculating a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature; Based on the acquired time in the power-on state during the historical time period, the power-on state value of the designated device at the current moment is calculated; wherein the power-on state value of the designated device indicates: the length of time the designated device is in the power-on state during the historical time period; Based on a predetermined mapping relationship between a temperature rise value, a temperature change rate, and a power-on status value, the temperature rise value of the designated device at the current moment is calculated using the temperature change rate and the power-on status value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate, and the power-on status value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device; The difference between the second temperature and the temperature rise value of the designated device at the current moment is calculated to obtain the ambient temperature of the environment where the designated device is located at the current moment.

2. The method according to claim 1, characterized in that The calculating the power-on status value of the specified device at the current moment based on the acquired time in the power-on status during the historical time period includes: Based on the acquired time in the power-on state in the historical time period, determine the time duration that the specified device is in the power-on state in each sub-time period included in the historical time period as the power-on time duration corresponding to the sub-time period; wherein the sub-time periods do not have an intersection, and the union of the sub-time periods is the historical time period; Calculate the ratio of each power-on duration to the duration of the corresponding sub-time period to obtain the power-on duration ratio of each sub-time period. Based on the calculated proportions of each power-on time, the power-on status value of the specified device at the current moment is calculated.

3. The method according to claim 2, characterized in that The calculating the power-on status value of the specified device at the current moment based on the calculated power-on time proportions includes: According to the preset weight of each sub-time period, the weighted sum of the power-on duration proportions corresponding to each sub-time period is calculated to obtain the power-on status value of the designated device at the current moment.

4. The method according to claim 3, characterized in that For each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval duration of the sub-time period; the interval duration of a sub-time period represents the interval duration between the sub-time period and the current moment.

5. The method according to claim 1, characterized in that The mapping relationship is determined by the following steps: Obtaining temperature rise values, temperature change rates, and power-on status values ​​of the sample device at multiple second historical moments; Based on the acquired temperature rise values, temperature change rates and power-on status values ​​at multiple second historical moments, function fitting is performed to obtain the mapping relationship.

6. The method according to claim 1, characterized in that The method of calculating the temperature rise value of the designated device at the current moment based on the mapping relationship between the predetermined temperature rise value, the temperature change rate and the power-on state value, and using the temperature change rate and the power-on state value of the designated device at the current moment, comprises: The temperature change rate and power-on status value of the designated device at the current moment are input into a pre-trained mapping model to obtain the temperature rise value of the designated device at the current moment; wherein the mapping model is trained based on the temperature change rate, power-on status value and temperature rise value of the sample device at multiple second historical moments.

7. The method according to claim 5 or 6, characterized in that: The temperature rise values, temperature change rates and power-on status values ​​of the sample device at multiple second historical moments are obtained by the following steps: For each second historical moment, obtaining the device temperature of the sample device at the third historical moment before the second historical moment and at the second historical moment, respectively as the third temperature and the fourth temperature, obtaining the ambient temperature of the environment where the sample device is located at the second historical moment, and obtaining the time that the sample device is in the power-on state within the sample time period with the second historical moment as the end moment; Calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment to obtain the temperature rise value of the sample device at the second historical moment; calculating the temperature change rate of the sample device at the second historical moment based on the difference between the third temperature and the fourth temperature; Based on the acquired power-on time within the sample time period, the power-on state value of the sample device at the second historical moment is calculated; wherein the power-on state value of the sample device indicates: the length of time the sample device is in the power-on state within the sample time period.

8. The method according to claim 1, characterized in that The first historical moments are multiple; Calculating a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature includes: For each first historical moment, calculating the temperature difference between the second temperature and the first temperature at the first historical moment, and calculating the interval between the current moment and the first historical moment; The ratio of the calculated temperature difference to the interval time is used to obtain the temperature change rate corresponding to the first historical moment; Based on the temperature change rates corresponding to the first historical moments, the temperature change rate of the designated device at the current moment is determined.

9. An ambient temperature calculation device, characterized in that: The device comprises: A data acquisition module, used to acquire the device temperature of the specified device at a first historical moment and a current moment, as the first temperature and the second temperature respectively, and to acquire the time during which the specified device is in a powered-on state within a historical time period with the current moment as the end moment; a temperature change rate calculation module, configured to calculate a temperature change rate of the designated device at a current moment based on a difference between the first temperature and the second temperature; A power-on status value calculation module, used to calculate the power-on status value of the specified device at the current moment based on the acquired time in the power-on status during the historical time period; wherein the power-on status value of the specified device indicates: the length of time the specified device is in the power-on status during the historical time period; a temperature rise value calculation module, for calculating the temperature rise value of the designated device at the current moment based on a predetermined mapping relationship between the temperature rise value, the temperature change rate and the power-on state value, and using the temperature change rate and the power-on state value of the designated device at the current moment; wherein the mapping relationship is obtained based on the temperature rise value, the temperature change rate and the power-on state value of the sample device at the second historical moment; the model of the sample device is the same as that of the designated device; The ambient temperature calculation module is used to calculate the difference between the second temperature and the temperature rise value of the designated device at the current moment, and obtain the ambient temperature of the environment where the designated device is located at the current moment.

10. The device according to claim 9, characterized in that The power-on status value calculation module includes: A power-on duration determination submodule, configured to determine, based on the acquired power-on time in the historical time period, the time that the designated device is in the power-on state in each sub-time period included in the historical time period as the power-on duration corresponding to the sub-time period; wherein the sub-time periods do not have an intersection, and the union of the sub-time periods is the historical time period; The power-on duration ratio calculation submodule is used to calculate the ratio of each power-on duration to the duration of the corresponding sub-time period, and obtain the power-on duration ratio corresponding to each sub-time period; A power-on status value calculation submodule, used to calculate the power-on status value of the specified device at the current moment based on the calculated proportions of each power-on duration; and / or, The power-on status value calculation submodule is specifically used to calculate the weighted sum of the power-on duration proportions corresponding to each sub-time period according to the preset weights of each sub-time period, so as to obtain the power-on status value of the specified device at the current moment; and / or, For each sub-time period, the preset weight of the sub-time period is positively correlated with the duration of the sub-time period, and / or the preset weight of the sub-time period is negatively correlated with the interval duration of the sub-time period; the interval duration of a sub-time period represents the interval duration between the sub-time period and the current moment; and / or, The mapping relationship is determined by the following steps: Obtaining temperature rise values, temperature change rates, and power-on status values ​​of the sample device at multiple second historical moments; Based on the temperature rise values, temperature change rates and power-on status values ​​at the multiple second historical moments acquired, function fitting is performed to obtain the mapping relationship; and / or, The temperature rise value calculation module is specifically used to input the temperature change rate and power-on status value of the designated device at the current moment into a pre-trained mapping model to obtain the temperature rise value of the designated device at the current moment; wherein the mapping model is trained based on the temperature change rate, power-on status value and temperature rise value of the sample device at multiple second historical moments; and / or, The device also includes: A sample acquisition module is used to obtain, for each second historical moment, the device temperature of the sample device at the third historical moment before the second historical moment and at the second historical moment, as the third temperature and the fourth temperature respectively, and obtain the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the time that the sample device is in the power-on state during the sample time period with the second historical moment as the end moment; calculate the difference between the fourth temperature and the ambient temperature of the environment where the sample device is located at the second historical moment, and obtain the temperature rise value of the sample device at the second historical moment; calculate the temperature change rate of the sample device at the second historical moment based on the difference between the third temperature and the fourth temperature; calculate the power-on state value of the sample device at the second historical moment based on the acquired power-on time during the sample time period; wherein the power-on state value of the sample device represents: the length of time that the sample device is in the power-on state during the sample time period; and / or, There are multiple first historical moments; the temperature change rate calculation module is specifically used to calculate, for each first historical moment, the temperature difference between the second temperature and the first temperature of the first historical moment, and to calculate the interval duration between the current moment and the first historical moment; the ratio of the calculated temperature difference to the interval duration is used to obtain the temperature change rate corresponding to the first historical moment; based on the temperature change rates corresponding to each first historical moment, the temperature change rate of the designated device at the current moment is determined.

11. An electronic device, characterized in that: include: Memory, used to store computer programs; A processor, for implementing any of the methods described in claims 1-8 when executing a program stored in a memory.

12. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the method according to any one of claims 1 to 8 is implemented.

13. A computer program product, characterized in that When the computer program product is run on a computer, the computer is enabled to execute the method according to any one of claims 1 to 8.

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