Performance monitoring assembly of integrated gate commutated thyristor and use method of performance monitoring assembly

Abstract

The invention provides a performance monitoring assembly of an integrated gate commutated thyristor and a use method thereof, and the corresponding assembly comprises the integrated gate commutated thyristor which is cylindrical; and the spiral segment array consists of a plurality of spiral segments, is uniformly arranged on the circular periphery of the integrated gate commutated thyristor, and is used for determining the current distribution of the integrated gate commutated thyristor so as to monitor the performance of the integrated gate commutated thyristor. The corresponding control method comprises the following steps: monitoring the induced voltage of each spiral section; determining a difference value between the induced voltages of each spiral section; and monitoring the performance of the integrated gate commutated thyristor according to the difference value. According to the method, the distribution condition of the internal current of the integrated gate commutated thyristor can be monitored in real time under the condition that normal operation of the integrated gate commutated thyristor is not interfered, and the health state of the device is evaluated in combination with the aging model.

Description

Technical Field

[0001] The present invention relates to the technical field of aging monitoring of integrated gate-commutated thyristors, and in particular to a performance monitoring component of a dual-integrated gate-commutated thyristor and a use method thereof. Background Art

[0002] Integrated Gate-Commutated Thyristor (IGCT) is a core component in modern high-voltage, high-power power electronic equipment, and is widely used in high-voltage DC transmission, high-power inverters and other industrial power applications. IGCT devices have become important conversion elements in power systems due to their efficient switching capability and thermal stability. However, as the working time increases, the distribution state and uneven current inside the device will cause device aging and performance degradation, and even cause failures. Therefore, monitoring the current changes during the aging process of IGCT is of great significance for device health status assessment, fault warning and equipment operation and maintenance.

[0003] Existing IGCT device monitoring methods mainly focus on macro parameters such as external voltage, current and temperature, but these external parameters are difficult to directly reflect the current distribution inside the device. Unbalanced current distribution will lead to increased local thermal stress, accelerate device aging, and even cause local failure. Summary of the invention

[0004] The present invention provides a performance monitoring component for an integrated gate-commutated thyristor and a method for using the same, with the purpose of accurately monitoring the internal current distribution state of an IGCT device, so as to accurately and in real time monitor the performance of the integrated gate-commutated thyristor, thereby determining the aging process of the integrated gate-commutated thyristor.

[0005] In order to achieve the above objectives, in a first aspect, the present invention provides a performance monitoring component for an integrated gate-commutated thyristor, comprising:

[0006] Integrated gate-commutated thyristor, cylindrical;

[0007] The spiral segment array is composed of a plurality of spiral segments and is evenly arranged on the circular periphery of the integrated gate-commutated thyristor, and is used to determine the current distribution of the integrated gate-commutated thyristor to monitor the performance of the integrated gate-commutated thyristor.

[0008] In some embodiments of the present invention, a performance monitoring assembly for an integrated gate-commutated thyristor further includes:

[0009] The voltage monitoring module is used to monitor the induced voltage of each spiral segment to determine the current distribution.

[0010] In a second aspect, the present invention provides a method for using the performance monitoring assembly of the integrated gate-commutated thyristor as described in the first aspect, comprising:

[0011] Real-time monitoring of the induced voltage of each spiral segment;

[0012] determining a difference between the induced voltages of each of the spiral segments;

[0013] The performance of the integrated gate-commutated thyristor is monitored based on the difference.

[0014] In some embodiments of the present invention, monitoring the performance of the integrated gate-commutated thyristor according to the difference includes:

[0015] determining a current distribution of the integrated gate-commutated thyristor according to the difference;

[0016] Performance of the integrated gate-commutated thyristor is monitored based on the current distribution.

[0017] In some embodiments of the present invention, a method for using a performance monitoring component of an integrated gate-commutated thyristor further includes:

[0018] Determining a curve of the current distribution versus time;

[0019] An aging curve of the integrated gate-commutated thyristor is generated according to the variation curve to predict the aging process of the integrated gate-commutated thyristor.

[0020] In a third aspect, the present invention provides a device for using the performance monitoring assembly of the integrated gate-commutated thyristor as described in the first aspect, comprising:

[0021] An induced voltage monitoring module is used to monitor the induced voltage of each spiral segment in real time;

[0022] A voltage difference determination module, used for determining the difference between the induced voltages of each spiral segment;

[0023] A performance monitoring module is used to monitor the performance of the integrated gate-commutated thyristor according to the difference.

[0024] In some embodiments of the present invention, the performance monitoring module includes:

[0025] a current distribution determining unit, configured to determine the current distribution of the integrated gate-commutated thyristor according to the difference;

[0026] A performance monitoring unit is used to monitor the performance of the integrated gate-commutated thyristor according to the current distribution.

[0027] In some embodiments of the present invention, a device for using a performance monitoring assembly of an integrated gate-commutated thyristor further includes:

[0028] A standard current distribution determination module, used to determine a standard current distribution according to a standard integrated gate-commutated thyristor;

[0029] The induced voltage calibration module is used to calibrate the collected induced voltage of each spiral segment according to the standard current distribution.

[0030] In some embodiments of the present invention, a device for using a performance monitoring assembly of an integrated gate-commutated thyristor further includes:

[0031] A variation curve determination module, used to determine a variation curve of the current distribution and time;

[0032] The aging process prediction module is used to generate an aging curve of the integrated gate-commutated thyristor according to the change curve to predict the aging process of the integrated gate-commutated thyristor.

[0033] In a fourth aspect, the present invention provides a computer program product, comprising a computer program / instruction, which, when executed by a processor, implements the steps of a method for using a performance monitoring component of an integrated gate-commutated thyristor.

[0034] In a fifth aspect, the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the program, steps of a method for using a performance monitoring component of an integrated gate-commutated thyristor are implemented.

[0035] In a sixth aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of a method for using a performance monitoring component of an integrated gate-commutated thyristor.

[0036] From the above description, it can be seen that an embodiment of the present invention provides a performance monitoring component for an integrated gate-commutated thyristor and a method of using the same, and the corresponding performance monitoring component for an integrated gate-commutated thyristor includes: an integrated gate-commutated thyristor, which is cylindrical; a spiral segment array, composed of a plurality of spiral segments, evenly arranged on the circular periphery of the integrated gate-commutated thyristor, for determining the current distribution of the integrated gate-commutated thyristor to monitor the performance of the integrated gate-commutated thyristor.

[0037] The method for using the corresponding integrated gate-commutated thyristor performance monitoring component includes: first, monitoring the induced voltage of each spiral segment; then, determining the difference between the induced voltages of each spiral segment; and finally, monitoring the performance of the integrated gate-commutated thyristor based on the difference.

[0038] In summary, the present invention provides a sensing method that can accurately monitor the internal current distribution state of an IGCT device, so as to more precisely monitor the health state of the IGCT device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0040] Figure 1 A schematic diagram of the structure of a performance monitoring component for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 1 ;

[0041] Figure 2 A schematic diagram of the structure of a performance monitoring component for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 2 ;

[0042] Figure 3 A schematic diagram of the structure of a performance monitoring component for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 3 ;

[0043] Figure 4 A schematic diagram of a method for using a performance monitoring component for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 1 ;

[0044] Figure 5 A schematic diagram of the flow of step 300 provided in an embodiment of the present invention;

[0045] Figure 6 A schematic diagram of a method for using a performance monitoring component of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 2 ;

[0046] Figure 7 A schematic diagram of a method for using a performance monitoring component of an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 3 ;

[0047] Figure 8 A schematic diagram of a method for using a performance monitoring component for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 4 ;

[0048] Fig. 9 A schematic diagram of a device for using a performance monitoring assembly for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 1 ;

[0049] Fig.10 It is a schematic diagram of the structure of the performance monitoring module 30 provided in an embodiment of the present invention;

[0050] Fig.11 A schematic diagram of a device for using a performance monitoring assembly for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 2 ;

[0051] Fig.12 A schematic diagram of a device for using a performance monitoring assembly for an integrated gate-commutated thyristor provided in an embodiment of the present invention Figure 3 ;

[0052] Fig.13 FIG. 4 is a schematic diagram of the structure of an electronic device in an embodiment of the present invention. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0054] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0055] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or apparatuses.

[0056] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0057] An embodiment of the present invention provides a specific implementation of a performance monitoring component for an integrated gate-commutated thyristor.

[0058] Specifically, see Figure 1 The performance monitoring component of the integrated gate-commutated thyristor specifically includes the following contents:

[0059] The integrated gate-commutated thyristor 1 is cylindrical;

[0060] The spiral segment array 2, composed of a plurality of spiral segments 3, is evenly arranged on the circular periphery of the integrated gate-commutated thyristor, and is used to determine the current distribution of the integrated gate-commutated thyristor 1 to monitor the performance of the integrated gate-commutated thyristor 1 (the backend server determines the current distribution of the integrated gate-commutated thyristor 1 through the spiral segment array 2 to monitor the performance of the integrated gate-commutated thyristor 1).

[0061] From the above description, it can be seen that an embodiment of the present invention provides a performance monitoring component for an integrated gate-commutated thyristor, comprising: an integrated gate-commutated thyristor, which is cylindrical; a spiral segment array, composed of a plurality of spiral segments, evenly arranged on the circular periphery of the integrated gate-commutated thyristor, for determining the current distribution of the integrated gate-commutated thyristor to monitor the performance of the integrated gate-commutated thyristor.

[0062] The present invention can monitor the distribution of the internal current of the integrated gate-commutated thyristor in real time without interfering with the normal operation of the integrated gate-commutated thyristor, and evaluate the health status of the device in combination with an aging model.

[0063] In some embodiments of the present invention, preferably, the integrated gate-commutated thyristor 1 is a crimped IGCT, and its working principle is roughly as follows: when the IGCT is working, its conduction and shutdown are controlled by the gate signal. During the conduction process, the IGCT is similar to a traditional thyristor and can carry high current. When it needs to be turned off, the gate drive circuit quickly removes the carriers, causing the device to turn off quickly. The fast turn-off characteristics of the IGCT are mainly attributed to its integrated gate drive circuit and optimized internal structure. The characteristics and advantages of the IGCT include:

[0064] High Current and High Voltage Capabilities: IGCTs are capable of handling very high currents and voltages and are suitable for high power applications.

[0065] Low conduction loss: In the on state, the IGCT has a low conduction voltage drop, resulting in low conduction loss.

[0066] Fast switching: IGCT has fast switching capability and can complete the transition from on to off in a short time.

[0067] High reliability: Due to its rugged structure and high tolerance, IGCT exhibits high reliability in harsh industrial environments.

[0068] Simple drive circuit: Compared with traditional thyristors, the gate drive circuit of IGCT is simpler, which simplifies system design.

[0069] In some embodiments of the present invention, see Figure 2 as well as Figure 3 The spiral segment array 2 is composed of 8 spiral segments 3, each of which is evenly distributed on the circumference of the cylinder of the integrated gate-commutated thyristor, that is, each spiral segment 3 occupies a regional position of 45°.

[0070] In some embodiments of the present invention, a performance monitoring assembly for an integrated gate-commutated thyristor further includes:

[0071] The voltage monitoring module is used to monitor the induced voltage of each spiral segment to determine the current distribution.

[0072] In some embodiments of the present invention, see Figure 4 The present invention also provides a method for using the performance monitoring component applied to the above-mentioned integrated gate-commutated thyristor, the method comprising:

[0073] Step 100: monitoring the induced voltage of each spiral segment in real time;

[0074] Step 200: Determine the difference between the induced voltages of each spiral segment;

[0075] Step 300: monitoring the performance of the integrated gate-commutated thyristor according to the difference.

[0076] In some embodiments of the present invention, the induced voltage in step 100 refers to the voltage generated by the spiral segment due to the change of the external magnetic field or the change of the current. It is the result of electromagnetic induction. According to Faraday's law of electromagnetic induction, the magnitude of the induced voltage is related to the rate of change of the magnetic field and the relative motion of the conductor and the magnetic field.

[0077] For step 200 and step 300, if the current distribution through the integrated gate-commutated thyristor is balanced, the difference between the induced voltages of each spiral segment should be small; if the current distribution is uneven, the spiral induced voltage in certain areas will increase significantly, thereby monitoring the performance of the integrated gate-commutated thyristor.

[0078] In some embodiments of the present invention, see Figure 5 , step 300 comprises:

[0079] Step 301: determining the current distribution of the integrated gate-commutated thyristor according to the difference;

[0080] It is understandable that uneven current distribution may cause local overheating, which in turn affects the life and stability of the IGCT. On the other hand, the uniformity of current distribution directly affects the conduction loss of the IGCT. If the current is unevenly distributed, some areas may be subjected to higher current density, resulting in overheating and increased power loss.

[0081] Furthermore, the current distribution inside the IGCT can be predicted through numerical simulation and circuit simulation (such as finite element analysis and electromagnetic field simulation). These models can be optimized and adjusted according to different working conditions (such as load changes, voltage fluctuations, etc.).

[0082] Step 302: Monitor the performance of the integrated gate-commutated thyristor according to the current distribution.

[0083] In some embodiments of the present invention, see Figure 6 , a method for using a performance monitoring component of an integrated gate-commutated thyristor, further comprising:

[0084] Step 400: determining a standard current distribution according to a standard integrated gate-commutated thyristor;

[0085] Step 500: Calibrate the collected induced voltage of each spiral segment according to the standard current distribution.

[0086] Specifically, the collected induced voltage is calibrated by a preset standard current signal to ensure the accuracy of the data.

[0087] In some embodiments of the present invention, see Figure 7 , a method for using a performance monitoring component of an integrated gate-commutated thyristor, further comprising:

[0088] Step 600: Determine the change curve of the current distribution and time;

[0089] Step 700: generating an aging curve of the integrated gate-commutated thyristor according to the variation curve to predict the aging process of the integrated gate-commutated thyristor.

[0090] In step 600 and step 700, based on the sensed current distribution data, the system will combine the aging assessment algorithm to assess the health status of the IGCT device. The algorithm predicts the aging process of the device and generates an aging curve by analyzing the change of current distribution over time. The system can also make trend predictions based on historical data and provide an estimate of the remaining life of the device to help maintenance personnel to perform equipment maintenance or replacement in a timely manner.

[0091] In some embodiments of the present invention, see Figure 8, a method for using a performance monitoring component of an integrated gate-commutated thyristor, further comprising:

[0092] Step 800: Filter and process the collected signal to remove noise and obtain a clear current distribution signal.

[0093] From the above description, it can be seen that the method for using a performance monitoring component of an integrated gate-commutated thyristor provided by an embodiment of the present invention includes: first, monitoring the induced voltage of each spiral segment; then, determining the difference between the induced voltages of each spiral segment; and finally, monitoring the performance of the integrated gate-commutated thyristor according to the difference. The present invention has the following beneficial effects:

[0094] 1. Real-time monitoring: The system can monitor the internal current distribution state of the IGCT device in real time while it is running, without affecting the normal operation of the device.

[0095] 2. High-precision perception: Through the distributed structure of multiple spiral segments, it can accurately perceive the current distribution in different areas and promptly detect local aging or faults caused by current imbalance.

[0096] 3. Aging assessment and early warning: The system can not only sense the current state, but also predict the aging process of the device based on historical data, and provide fault early warning and life assessment.

[0097] 4. Compact structure: The short spiral segment array can be flexibly arranged and is suitable for IGCT devices of various shapes and structures without affecting the installation and connection of the equipment.

[0098] To further illustrate the present solution, the present invention provides a specific application example of a performance monitoring component of an integrated gate-commutated thyristor, which specifically includes the following contents.

[0099] The performance monitoring component of an integrated gate-commutated thyristor provided in a specific application example of the present invention has 8 spiral segments, which are evenly distributed around the IGCT, and the current flows in from the upper end of the IGCT and flows out from the lower end. Each spiral segment can sense the change of the surrounding current, and infer the distribution of the current inside the IGCT through the size and change of the induced voltage. If the current distribution is balanced, the voltage difference induced by each coil segment is small; if the current distribution is uneven, the spiral induced voltage in some areas will increase significantly.

[0100] First, each spiral segment is connected to the data acquisition platform, which is responsible for collecting the induced voltage data of each spiral segment in real time and analyzing the data. Its specific functions are as follows:

[0101] Data calibration: The collected induced voltage is calibrated through a pre-set standard current signal to ensure the accuracy of the data;

[0102] Data filtering and processing: Filter and process the collected signals to remove noise and obtain clear current distribution signals;

[0103] Next, based on the sensed current distribution data, the system will combine the aging assessment algorithm to evaluate the health status of the IGCT device. The algorithm predicts the aging process of the device by analyzing the change of current distribution over time and generates an aging curve. The system can also make trend predictions based on historical data and give an estimate of the remaining life of the device to help maintenance personnel perform equipment maintenance or replacement in a timely manner.

[0104] Based on the same inventive concept, the embodiments of the present application also provide a device for using a performance monitoring component of an integrated gate-commutated thyristor, which can be used to implement the method described in the above embodiments, such as the following embodiments. Since the principle of solving the problem by the device for using a performance monitoring component of an integrated gate-commutated thyristor is similar to the method for using a performance monitoring component of an integrated gate-commutated thyristor, the implementation of the device for using a performance monitoring component of an integrated gate-commutated thyristor can refer to the implementation of the method for using a performance monitoring component of an integrated gate-commutated thyristor, and the repeated parts will not be repeated. As used below, the term "unit" or "module" can be a combination of software and / or hardware that implements a predetermined function. Although the system described in the following embodiments is preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceived.

[0105] The embodiment of the present invention provides a specific implementation of a device for using a performance monitoring component of an integrated gate-commutated thyristor that can implement a method for using a performance monitoring component of an integrated gate-commutated thyristor, see Fig. 9 , the using device comprises:

[0106] An induced voltage monitoring module 10, used for real-time monitoring of the induced voltage of each spiral segment;

[0107] A voltage difference determination module 20, used to determine the difference between the induced voltages of each spiral segment;

[0108] The performance monitoring module 30 is used to monitor the performance of the integrated gate-commutated thyristor according to the difference.

[0109] In some embodiments of the present invention, see Fig.10 , the performance monitoring module 30 includes:

[0110] a current distribution determining unit 30a, configured to determine the current distribution of the integrated gate-commutated thyristor according to the difference;

[0111] The performance monitoring unit 30b is used to monitor the performance of the integrated gate-commutated thyristor according to the current distribution.

[0112] In some embodiments of the present invention, see Fig.11 , a device for using a performance monitoring assembly of an integrated gate-commutated thyristor, further comprising:

[0113] A standard current distribution determination module 40, configured to determine a standard current distribution according to a standard integrated gate-commutated thyristor;

[0114] The induced voltage calibration module 50 is used to calibrate the collected induced voltage of each spiral segment according to the standard current distribution.

[0115] In some embodiments of the present invention, see Fig.12 , a device for using a performance monitoring assembly of an integrated gate-commutated thyristor, further comprising:

[0116] A variation curve determination module 60, used to determine a variation curve of the current distribution and time;

[0117] The aging process prediction module 70 is used to generate an aging curve of the integrated gate-commutated thyristor according to the change curve to predict the aging process of the integrated gate-commutated thyristor.

[0118] From the above description, it can be seen that the embodiment of the present invention provides a device for using a performance monitoring component of an integrated gate-commutated thyristor, comprising: an induced voltage monitoring module for implementing monitoring of the induced voltage of each spiral segment; a voltage difference determination module for determining the difference between the induced voltages of each spiral segment; and a performance monitoring module for monitoring the performance of the integrated gate-commutated thyristor according to the difference. Specifically, a device for using a performance monitoring component of an integrated gate-commutated thyristor has the following beneficial effects:

[0119] 1. Real-time monitoring: The system can monitor the internal current distribution state of the IGCT device in real time while it is running, without affecting the normal operation of the device.

[0120] 2. High-precision perception: Through the distributed structure of multiple spiral segments, it can accurately perceive the current distribution in different areas and promptly detect local aging or faults caused by current imbalance.

[0121] 3. Aging assessment and early warning: The system can not only sense the current state, but also predict the aging process of the device based on historical data, and provide fault early warning and life assessment.

[0122] 4. Compact structure: The short spiral segment array can be flexibly arranged and is suitable for IGCT devices of various shapes and structures without affecting the installation and connection of the equipment.

[0123] The embodiment of the present application also provides a specific implementation of an electronic device capable of implementing all steps in the method for using the performance monitoring component of the integrated gate-commutated thyristor in the above embodiment, see Fig.13 , electronic equipment specifically includes the following:

[0124] Processor (processor) 1201, memory (memory) 1202, communication interface (CommunicationsInterface) 1203 and bus 1204;

[0125] The processor 1201 , the memory 1202 , and the communication interface 1203 communicate with each other via the bus 1204 ; the communication interface 1203 is used to realize information transmission between relevant devices such as the server-side device, the power measurement device, and the user-side device.

[0126] The processor 1201 is used to call the computer program in the memory 1202. When the processor executes the computer program, all steps in the method for using the performance monitoring component of the integrated gate-commutated thyristor in the above embodiment are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0127] Step 100: monitoring the induced voltage of each spiral segment in real time;

[0128] Step 200: Determine the difference between the induced voltages of each spiral segment;

[0129] Step 300: monitoring the performance of the integrated gate-commutated thyristor according to the difference.

[0130] The embodiments of the present application also provide a computer-readable storage medium capable of implementing all steps in the method for using the performance monitoring component of the integrated gate-commutated thyristor in the above embodiment. The computer-readable storage medium stores a computer program. When the computer program is executed by a processor, all steps in the method for using the performance monitoring component of the integrated gate-commutated thyristor in the above embodiment are implemented. For example, when the processor executes the computer program, the following steps are implemented:

[0131] Step 100: monitoring the induced voltage of each spiral segment in real time;

[0132] Step 200: Determine the difference between the induced voltages of each spiral segment;

[0133] Step 300: monitoring the performance of the integrated gate-commutated thyristor according to the difference.

[0134] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the hardware + program embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0135] The above is a description of a specific embodiment of the specification. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0136] Although the present application provides method operation steps such as embodiments or flow charts, more or fewer operation steps may be included based on conventional or non-creative labor. The order of steps listed in the embodiments is only one way of executing the order of many steps and does not represent the only execution order. When the actual device or client product is executed, it can be executed in the order of the method shown in the embodiments or the drawings or in parallel (for example, in a parallel processor or multi-threaded processing environment).

[0137] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0138] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0139] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0140] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A performance monitoring component for an integrated gate-commutated thyristor, characterized in that: include: Integrated gate-commutated thyristor, cylindrical; The spiral segment array is composed of a plurality of spiral segments and is evenly arranged on the circular periphery of the integrated gate-commutated thyristor, and is used to determine the current distribution of the integrated gate-commutated thyristor to monitor the performance of the integrated gate-commutated thyristor.

2. The performance monitoring assembly of the integrated gate-commutated thyristor according to claim 1, characterized in that: Also includes: The voltage monitoring module is used to monitor the induced voltage of each spiral segment to determine the current distribution.

3. A method for using the performance monitoring component of the integrated gate-commutated thyristor according to any one of claims 1 to 2, characterized in that: include: Real-time monitoring of the induced voltage of each spiral segment; determining a difference between the induced voltages of each of the spiral segments; The performance of the integrated gate-commutated thyristor is monitored based on the difference.

4. The method of use according to claim 3, characterized in that: Monitoring the performance of the integrated gate-commutated thyristor according to the difference comprises: determining a current distribution of the integrated gate-commutated thyristor according to the difference; Performance of the integrated gate-commutated thyristor is monitored based on the current distribution.

5. The method of use according to claim 3, characterized in that: Also includes: Determine the standard current distribution based on standard integrated gate-commutated thyristors; The collected induced voltage of each spiral segment is calibrated according to the standard current distribution.

6. The method of use according to claim 3, characterized in that: Also includes: Determining a curve of the current distribution versus time; An aging curve of the integrated gate-commutated thyristor is generated according to the variation curve to predict the aging process of the integrated gate-commutated thyristor.

7. A device for using the performance monitoring assembly of the integrated gate-commutated thyristor according to any one of claims 1 to 2, characterized in that: include: An induced voltage monitoring module is used to monitor the induced voltage of each spiral segment in real time; A voltage difference determination module, used for determining the difference between the induced voltages of each spiral segment; A performance monitoring module is used to monitor the performance of the integrated gate-commutated thyristor according to the difference.

8. The device according to claim 7, characterized in that: The performance monitoring module includes: a current distribution determining unit, configured to determine the current distribution of the integrated gate-commutated thyristor according to the difference; A performance monitoring unit is used to monitor the performance of the integrated gate-commutated thyristor according to the current distribution.

9. The device according to claim 7, characterized in that: Also includes: A standard current distribution determination module, used to determine a standard current distribution according to a standard integrated gate-commutated thyristor; The induced voltage calibration module is used to calibrate the collected induced voltage of each spiral segment according to the standard current distribution.

10. The device according to claim 7, characterized in that: Also includes: A variation curve determination module, used to determine a variation curve of the current distribution and time; The aging process prediction module is used to generate an aging curve of the integrated gate-commutated thyristor according to the change curve to predict the aging process of the integrated gate-commutated thyristor.

11. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the steps of the method for using the performance monitoring component of an integrated gate-commutated thyristor according to any one of claims 3 to 6 are implemented.

12. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the program, the steps of the method for using the performance monitoring component of the integrated gate-commutated thyristor according to any one of claims 3 to 6 are implemented.

13. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for using the performance monitoring component of an integrated gate-commutated thyristor according to any one of claims 3 to 6 are implemented.

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