Junction temperature monitoring system and junction temperature monitoring method

Abstract

The invention discloses a junction temperature monitoring system and a junction temperature monitoring method, which are used for improving the measurement precision of the junction temperature of a power semiconductor device and realizing real-time online monitoring of the power semiconductor device. The system comprises a power semiconductor device, a temperature sensing element and a data processing unit, the temperature sensing element is arranged at a target position in an electrode of the power semiconductor device and used for obtaining the temperature of the target position, and the data processing unit is electrically connected with the temperature sensing element and used for processing the temperature of the target position. And the calculation module is used for calculating junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the received temperature data acquired by the temperature sensing element and a preset model. According to the monitoring system, the junction temperature of the power semiconductor device can be mastered in real time, and powerful technical support is provided for preventing thermal failure, optimizing the working state and prolonging the service life of the device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a junction temperature monitoring system and a junction temperature monitoring method for a power semiconductor device. Background Art

[0002] As the core component of power electronic systems, the reliability and performance of power semiconductor devices are directly affected by junction temperature. Studies have shown that excessive junction temperature is the main cause of failure of more than 50% of power devices, and the probability of device failure will double for every 10°C increase in ambient temperature. The increase in junction temperature will not only lead to the attenuation of thermosensitive electrical parameters such as threshold voltage, on-state voltage drop and switching time, but also aggravate the degradation of thermal and electrical conductivity of electrode materials, as well as relative friction caused by differences in thermal expansion coefficients of internal layers of materials. Under the combined effect of these factors, the reliability of power devices is significantly reduced. Therefore, accurate monitoring and evaluation of junction temperature is crucial for the health status and life prediction of power devices.

[0003] The existing technology for monitoring junction temperature is mainly based on junction temperature monitoring with infrared thermal imagers, which captures the temperature distribution on the device surface through infrared detectors to infer the internal junction temperature. However, this method can only obtain the surface temperature, and there is a large error in the reverse estimation of the internal chip junction temperature, especially in the case of complex heat flow paths and heat source distribution, the accuracy is limited.

[0004] There is also a junction temperature monitoring method based on thermistor parameters, which monitors the junction temperature in real time during operation by measuring changes in device threshold voltage, on-resistance and other parameters. However, when the device carries large current or high-frequency switching operations, the linear relationship between thermistor parameters and temperature becomes complicated, seriously affecting the accuracy and reliability of junction temperature measurement. Summary of the invention

[0005] The present application provides a junction temperature monitoring system and a junction temperature monitoring method to solve the problem in the related art that the accuracy and reliability of real-time detection of junction temperature are low, resulting in poor accuracy in evaluating the state and operating condition of power semiconductor devices.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a junction temperature monitoring system is provided, comprising a power semiconductor device, a temperature sensing element and a data processing unit. The temperature sensing element is arranged at a target position in an electrode of the power semiconductor device, and is used to obtain the temperature of the target position. The data processing unit is electrically connected to the temperature sensing element, and calculates the junction temperature information of the power semiconductor device according to the position information of the target position, the received temperature data and the preset model.

[0007] Optionally, the temperature sensing element has a first end and a second end opposite to each other, extending from the second end to the first end, the first end is located inside the electrode, and the second end is located at an edge of the electrode.

[0008] Optionally, there are a plurality of temperature sensing elements arranged at intervals, and extension paths of the plurality of temperature sensing elements are independently selected from one or more of a straight line, a curve and a broken line.

[0009] Optionally, the electrode has a first surface; the extension path of the temperature sensing element has at least one path unit connected in sequence, and adjacent path units have different extension directions. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent of the target path unit. The target path unit is any path unit, and each path unit independently satisfies one of the following:

[0010] An extension direction of the path unit is parallel to the first surface;

[0011] An angle is formed between an extension direction of the path unit and the first surface.

[0012] Optionally, the electrode has a plurality of regions with equal volumes, and a plurality of temperature sensing elements are independently located in different regions.

[0013] Optionally, the electrode has a plurality of regions arranged in a matrix, and the first ends of the plurality of temperature sensing elements are independently located in different regions.

[0014] Optionally, the power semiconductor device has a first electrode and a second electrode located on two opposite sides, and the temperature sensing element is located inside the first electrode and / or the second electrode.

[0015] Optionally, the electrode has a plurality of accommodating holes extending inward from the surface, the temperature sensing element is located in the accommodating holes and corresponds one-to-one with the accommodating holes, the surface of the electrode having the target accommodating hole is the target surface, the target accommodating hole is any one of the plurality of accommodating holes, the temperature sensing element arranged in the target accommodating hole has a first endpoint at an end portion on one side close to the bottom of the target accommodating hole, the shortest distance between the first endpoint and the target surface is a first spacing, and the first spacings of at least two temperature sensing elements are different.

[0016] Optionally, the temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor and a diode thermometer.

[0017] Another aspect of the present application provides a junction temperature monitoring method, which is applied to a data processing unit in the above-mentioned junction temperature monitoring system. The junction temperature monitoring method includes: obtaining temperature information provided by a temperature sensing element in the junction temperature monitoring system and position information of a target position, wherein the target position is the position of the temperature sensing element in an electrode of a power semiconductor device in the junction temperature monitoring system; and outputting the junction temperature information of the power semiconductor device according to the temperature information, position information and a preset model of the power semiconductor device.

[0018] The junction temperature monitoring system proposed in this application aims to achieve high-precision and real-time monitoring of junction temperature by directly embedding temperature sensing elements in the electrodes of power semiconductor devices, combining a data processing unit and a preset heat conduction model, thereby improving the accuracy of device status monitoring and operating condition assessment. Among them, the junction temperature change of the device directly reflects the temperature state inside the electrode, and the electrode is one of the main paths for heat accumulation and diffusion in the power device. The present application sets the temperature sensing element directly inside the electrode of the power semiconductor device to more accurately capture the real change of the junction temperature, avoiding the errors of the surface temperature measurement and indirect temperature measurement methods, especially when the device carries a large current or high power density. The temperature sensing element can respond to temperature changes in real time. When the device is running, the temperature change signal inside the electrode is instantly converted into an electrical signal by the temperature sensing element, and these signals are transmitted to the data processing unit through an electrical connection. The data processing unit receives the temperature data and position information from the temperature sensing element, combines the preset model, and performs data processing and junction temperature calculation in real time, thereby calculating the heat distribution inside the device, and then inversely deduces the junction temperature information. The data processing unit can complete the analysis and calculation of a large amount of data in a very short time, ensuring the real-time and accuracy of the junction temperature information, so that the system can respond to changes in the device working conditions in real time, and provide real-time monitoring results, which solves the problem of low accuracy and reliability of real-time detection of junction temperature in related technologies, resulting in poor accuracy of state and working condition evaluation of power semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 is a structural schematic diagram of a junction temperature monitoring system provided in an embodiment of the present application;

[0021] Figure 2 is a schematic diagram of a partial structure of an electrode in a power semiconductor device provided in an embodiment of the present application;

[0022] Figure 3 is a schematic cross-sectional structure diagram of a power semiconductor device provided in an embodiment of the present application;

[0023] Figure 4 is a schematic diagram of the layout of a temperature sensing element in an electrode according to an embodiment of the present application;

[0024] Figure 5 is a schematic diagram of the layout of another temperature sensing element in an electrode according to an embodiment of the present application;

[0025] Figure 6is a schematic diagram of the layout of another temperature sensing element in an electrode according to an embodiment of the present application;

[0026] Figure 7 It is a schematic diagram of a mixed layout of a temperature sensing element in an electrode according to an embodiment of the present application;

[0027] Figure 8 is a schematic diagram of a hybrid layout of another temperature sensing element in an electrode according to an embodiment of the present application;

[0028] Fig. 9 is a schematic diagram of dividing an electrode area provided in an embodiment of the present application;

[0029] Fig.10 is a schematic diagram of dividing another electrode region provided in an embodiment of the present application;

[0030] Fig.11 is a schematic diagram of a structure of a receiving hole in an electrode according to an embodiment of the present application;

[0031] Fig.12 A hardware structure block diagram of a mobile terminal for performing a junction temperature monitoring method provided in an embodiment of the present application is shown;

[0032] Fig.13 is a flow chart of a junction temperature monitoring method according to an embodiment of the present application.

[0033] The above drawings include the following reference numerals:

[0034] 10. Power semiconductor device; 101. Power semiconductor chip; 11. Electrode; 1101. First electrode; 1102. Second electrode; 110. First surface; 111. Receiving hole; 1110. Target surface; 20. Temperature sensing element; 21. First end; 22. Second end; 30. Data processing unit; 102. Processor; 104. Memory; 106. Transmission device; 108. Input / output device. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0036] It should be noted that, unless otherwise specified, all technical and scientific terms used in this application have the same meanings as commonly understood by ordinary technicians in the technical field to which this application belongs.

[0037] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0038] As introduced in the background technology, accurate monitoring and evaluation of junction temperature is crucial for the health status and life prediction of power devices. The existing technology for monitoring junction temperature has large errors in the reverse estimation of the internal chip junction temperature, especially in the case of complex heat flow paths and heat source distribution, the accuracy is limited. When the device carries large currents or high-frequency switching operations, the linear relationship between thermistor parameters and temperature becomes complicated, which seriously affects the accuracy and reliability of junction temperature measurement. In order to solve the problems of low accuracy and reliability of real-time detection of junction temperature in related technologies and poor accuracy of status and operating condition evaluation of power semiconductor devices, the present application provides a junction temperature monitoring system and a junction temperature monitoring method.

[0039] According to an embodiment of the present application, a junction temperature monitoring system is provided, such as Figure 1 and Figure 3 As shown, it includes a power semiconductor device 10, a temperature sensing element 20 and a data processing unit 30, wherein: the temperature sensing element 20 is arranged at a target position in the electrode 11 of the power semiconductor device 10, and is used to obtain the temperature of the target position; the data processing unit 30 is electrically connected to the temperature sensing element 20, and calculates the junction temperature information of the power semiconductor device 10 according to the position information of the target position, the received temperature data and the preset model.

[0040] Among them, Figure 3 As shown, the electrode 11 includes a first electrode 1101 and a second electrode 1102, and a power semiconductor chip 101 is further provided between the first electrode 1101 and the second electrode 1102. The power semiconductor device 10 is packaged by a component including the first electrode 1101, the second electrode 1102 and the power semiconductor chip 101, and a plurality of power semiconductor units are formed in the power semiconductor chip 101.

[0041] By directly measuring the temperature inside the electrode, the system can more accurately reflect the thermal stress distribution inside the power semiconductor device 10, which is of great significance for optimizing device design and improving device life and reliability.

[0042] In this embodiment, if Figure 3 As shown, the temperature sensing element 20 is directly embedded in the electrode 11 of the power semiconductor device 10. Compared with the surface temperature measurement and the indirect temperature measurement method based on the change of electrical parameters, the direct contact temperature measurement can capture the real temperature inside the electrode 11, avoiding the inconsistency between the surface and the inside, or the change of electrical parameters and the temperature, and reducing the measurement error. At the same time, the temperature sensing element 20, such as a thermal resistor, a thermocouple, etc., has the characteristics of fast response and high stability, and can instantly feedback temperature changes to achieve real-time monitoring. The data processing unit 30 receives the temperature information transmitted from the temperature sensing element 20, and performs data processing and calculation in combination with the preset model.

[0043] This implementation method directly collects the temperature inside the electrode and uses a preset model for accurate calculation, effectively improving the accuracy of junction temperature monitoring and overcoming the defects of traditional methods. At the same time, the real-time data collection and processing capabilities enable the system to respond instantly to changes in the device's operating status and provide accurate junction temperature information, providing a solid foundation for device status monitoring and operating condition evaluation. This is of great value in preventing thermal failures, optimizing device operating conditions, and extending device life.

[0044] Exemplarily, the preset model in the data processing unit is a heat conduction model, which is based on Fourier's law of heat conduction and the differential equation of heat conduction, and integrates the geometric structure of the device, the material thermal physical parameters, the heat source distribution and other information, and can accurately reflect the temperature distribution inside the electrode. By comparing the real-time temperature data with the model, the data processing unit 30 can quickly infer the junction temperature information of the power semiconductor device, ensuring the real-time and accuracy of the monitoring.

[0045] In some optional embodiments, such as Figure 2 As shown, the temperature sensing element 20 has a first end 21 and a second end 22 opposite to each other, extending from the second end 22 to the first end 21, the first end 21 is located inside the electrode 11, and the second end 22 is located at the edge of the electrode 11. This embodiment optimizes the thermal management of the power device, prevents thermal failure, and prolongs the service life of the device.

[0046] Specifically, the sensing module of the temperature sensing element 20 is located in the first end 21. Placing the first end 21 of the temperature sensing element 20 inside the electrode 11 means that the sensing module is closer to the heat source, that is, the junction area of ​​the power device. This direct contact temperature measurement can reduce the temperature difference loss in the heat conduction path and provide temperature data that is closer to the actual junction temperature. Since the junction temperature is a key parameter affecting the performance and life of the power device, directly measuring the internal temperature of the electrode 11 can significantly improve the accuracy of state monitoring and operating condition assessment. Among them, the second end 22 is located at the edge of the electrode 11. The second end 22 can be located inside the electrode 11 or overlap with the edge of the electrode 11, or it can protrude from the electrode 11, so that the second end 22 is more convenient to connect with the external circuit or data processing unit, and the electrical signal of the sensing module can be directly transmitted to the data processing unit through the second end 22, avoiding the noise interference and signal attenuation problems that may be introduced by long-distance signal transmission. The stable connection between the sensing module and the electrode 11 and the direct connection to the external circuit not only improves the accuracy of temperature measurement, but also enhances the real-time monitoring capability of the system, ensuring the continuity and accuracy of data even when the device is subjected to large current or high-frequency switching operations, thereby optimizing the thermal management of power devices, preventing thermal failure, and accurately monitoring junction temperature to extend the service life of the device.

[0047] In some optional embodiments, such as Figures 4 to 8As shown, the temperature sensing element 20 is arranged in multiple intervals, and the extension paths of the multiple temperature sensing elements 20 are independently selected from one or more of a straight line, a curve and a broken line. The temperature sensing element 20 is not only arranged inside the electrode 11 of the power semiconductor device 10, but also adopts a multi-point interval distribution and a layout strategy with diverse directions to achieve high-precision real-time monitoring of the junction temperature, thereby improving the accuracy of device state monitoring and working condition evaluation. Among them, the multi-point interval distribution design enables the temperature sensing element 20 to be distributed at different positions inside the electrode 11 to capture more comprehensive temperature information. During the operation of the device, the temperature distribution inside the electrode 11 is not uniform, especially under high power density conditions, the temperature near the heat source may be significantly higher than other areas. By setting the temperature sensing element 20 at multiple key positions, the system can monitor these temperature changes in real time, provide multi-point temperature data, and enable the data processing unit to accurately calculate the junction temperature based on more abundant information. This multi-point monitoring strategy enhances the system's sensitivity and response speed to temperature anomalies, thereby achieving more accurate junction temperature evaluation. The diversity of the extension paths of the temperature sensing element 20 further improves the flexibility and coverage of monitoring, and can more accurately reflect the heat conduction path and temperature distribution characteristics inside the electrode 11. Especially in the case of complex device structure and uneven heat source distribution, the temperature sensing element 20 with diverse paths can capture more detailed temperature gradients, which helps to build a more accurate heat conduction model, thereby improving the accuracy of junction temperature calculation, providing more reliable data support for operating condition evaluation, ensuring that the power device operates efficiently within a safe temperature range, and effectively extending the service life of the device.

[0048] Specifically, by setting up multiple temperature sensing elements at different locations inside the electrode, the data processing unit can construct a temperature distribution map, which helps to more comprehensively understand the thermal state inside the power device. In the data processing unit, this intuitive multi-point temperature monitoring can effectively observe the phenomenon of local overheating, thereby ensuring the stable operation of the system.

[0049] In some optional embodiments, the extension path of the temperature sensing element has at least one path unit connected in sequence, and the extension directions of adjacent path units are different. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent of the target path unit. The target path unit is any path unit, and each path unit independently satisfies one of the following: the extension direction of the path unit is parallel to the first surface; there is an angle between the extension direction of the path unit and the first surface. The temperature sensing element adopts a variety of extension path units and corresponding extension direction settings, which can build a more sophisticated and flexible temperature monitoring network inside the power device, effectively improve the accuracy and feasibility of junction temperature detection, and thus enhance the accuracy of device status monitoring and working condition evaluation.

[0050] Specifically, there is only one extension direction in one path unit.

[0051] In some optional embodiments, such as Figure 4 As shown (when the extension path is a straight line), where Figure 4 (a) shows the electrode structure in xy coordinates, Figure 4 (b) shows the electrode structure under the xz coordinate, the electrode 11 has a first surface 110, and the extension direction of at least one temperature sensing element 20 is parallel to the first surface 110. At least one temperature sensing element 20 extends parallel to the first surface 110 of the electrode 11, ensuring that the temperature change along the plane direction of the electrode 11 can be accurately captured, which is usually closely related to the heat source distribution and the heat conduction path.

[0052] For example, Figure 4 As shown, Figure 4 A layout scheme of the temperature sensing elements 20 is shown, that is, a layout in which the extension direction of the plurality of temperature sensing elements 20 is parallel to the first surface 110 of the electrode 11 , so as to achieve high-precision real-time junction temperature monitoring.

[0053] In the above example, if Figure 4 As shown, on the side wall of the electrode 11, multiple different heights and positions are selected, and holes are drilled in the radial direction (i.e., in a direction parallel to the first surface 110 of the electrode 11) to a specified depth. The position, number, and depth of these holes are flexibly set according to the thermal characteristics and monitoring requirements of the device, aiming to cover the key hot zones inside the electrode 11. Subsequently, a calibrated temperature sensing element 20 such as a thermistor is embedded in each hole to ensure that the first end of the temperature sensing element 20 (that is, the sensing module) can directly contact the inside of the electrode 11 for accurate temperature measurement. This layout not only simplifies the processing technology, but also improves the installation accuracy of the temperature sensing element 20, which is conducive to maintaining its long-term stability and reliability. When the device is running, the sensing module embedded in the temperature sensing element 20 on the side wall of the electrode 11 continuously detects the local temperature of the area in which it is located to obtain real-time temperature data.

[0054] In some optional embodiments, such as Figures 5 and 6 As shown (when the extension path is a straight line), where Figure 5 (a) and Figure 6 (a) shows the electrode structure in xy coordinates, Figure 5 (b) and Figure 6 (b) shows the electrode structure under xz coordinates, respectively. The electrode 11 has a first surface 110, and the extension direction of at least one temperature sensing element 20 forms an angle with the first surface 110. At least one temperature sensing element 20 extends at an angle with the first surface 110, so that the temperature gradient in the depth direction of the electrode 11 can be monitored. This three-dimensional monitoring strategy helps to build a more comprehensive heat conduction model.

[0055] For example, Figure 5 As shown, Figure 5 Another layout scheme of the temperature sensing elements 20 is shown, that is, a layout in which the extension direction of the plurality of temperature sensing elements 20 is perpendicular to the first surface 110 of the electrode 11 , thereby achieving high-precision real-time junction temperature monitoring.

[0056] In the above example, if Figure 5 As shown, on the bottom surface of the electrode 11 (i.e., the first surface 110 and the surface opposite to the first surface 110), multiple different positions are selected, and holes are drilled in a direction perpendicular to the first surface 110 until a preset depth is reached. The positions, number and depth of these holes are set according to the thermal characteristics and monitoring requirements of the device to cover the key areas on the internal heat conduction path of the electrode 11, and this application does not make specific restrictions. Subsequently, a calibrated thermal resistor (or other type of temperature sensing element 20) is embedded in each hole to ensure that the first end of the temperature sensing element 20 (i.e., the sensing module part) can be in direct contact with the electrode 11 for accurate temperature measurement. When the device is running, the sensing module embedded in the temperature sensing element 20 on the side wall of the electrode 11 continuously detects the local temperature of the area where it is located and obtains real-time temperature data. The setting of the vertical extension direction enables the thermal resistor to respond quickly to temperature fluctuations, reduces the response time and measurement delay, and ensures the real-time and reliability of the data.

[0057] In another example, if Figure 6 As shown, Figure 6 Another layout scheme of the temperature sensing elements 20 is shown, that is, a layout in which the extension direction of the plurality of temperature sensing elements 20 and the first surface 110 of the electrode 11 have an acute angle or an obtuse angle. By optimizing the arrangement of the temperature sensing elements 20, the accuracy and reliability of junction temperature monitoring can be improved.

[0058] In the above example, if Figure 6As shown, on the surface of the electrode 11 (i.e., the first surface 110, the surface opposite to the first surface 110, and the side wall surface), multiple different positions are selected, and holes are drilled from these positions along the oblique direction (i.e., the direction forming a preset angle with the first surface 110) to different depths. The position, number, and depth of the drilling holes are adjusted according to the thermal characteristics of the device, the internal heat flow path, and the monitoring requirements to ensure that the key nodes of heat conduction inside the electrode 11 can be effectively monitored, and this application does not make specific restrictions. Subsequently, a calibrated thermistor or other temperature sensing element 20 is embedded in each oblique drilled hole to ensure that the first end of the temperature sensing element 20 (i.e., the sensing module part) is in close contact with the electrode 11 material to perform high-precision temperature measurement. When the device is running, the sensing module embedded in the temperature sensing element 20 on the side wall of the electrode 11 continuously detects the local temperature of the area in which it is located to obtain real-time temperature data. This oblique drilling layout can more flexibly cover the complex heat distribution areas inside the device, especially in areas with complex heat flow and large temperature gradient. The oblique arrangement of the temperature sensing element 20 can effectively capture the temperature gradient information and improve the sensitivity and accuracy of temperature monitoring. By adjusting the angle and depth, the sensing module of the temperature sensing element 20 can be more accurately close to the heat source, reducing signal attenuation and delay in the heat conduction process.

[0059] In some optional embodiments, such as Figure 7 As shown (when the extension path is a straight line), where Figure 7 (a) shows the electrode structure in xy coordinates, Figure 7 (b) shows the electrode structure under the xz coordinate, where the electrode 11 has a first surface 110; the extension direction of at least one temperature sensing element 20 is parallel to the first surface 110, and there is an angle between the extension direction of at least one temperature sensing element 20 and the first surface 110. This hybrid layout combines the advantages of simple process and internal depth detection, and improves the accuracy of device status monitoring and working condition evaluation.

[0060] For example, Figure 7 As shown, Figure 7 , another layout scheme of the temperature sensing element 20 is shown, that is, the extension direction of at least one temperature sensing element 20 is parallel to the first surface 110 of the electrode 11 and there is an angle between the extension direction of at least one temperature sensing element 20 and the first surface 110, thereby realizing comprehensive monitoring of the internal temperature of the power device.

[0061] In the above example, if Figure 7As shown, on the side wall surface of the electrode 11, multiple different positions are selected, and holes are drilled to different depths in the radial direction (i.e., the direction parallel to the first surface 110) and the oblique direction (i.e., the direction forming an angle with the first surface 110). The positions, number and depth of these holes are set according to the thermal characteristics and monitoring requirements of the device, and the key thermal zones inside the electrode 11 can be covered, and the present application does not make specific restrictions. A temperature sensing element 20 such as a calibrated thermal resistor is embedded in each hole to ensure that the first end of the temperature sensing element 20 (i.e., the sensing module) can be in direct contact with the electrode 11 for high-precision temperature measurement. When the device is running, the horizontally and obliquely embedded temperature sensing elements 20 work together to fully monitor the key thermal zones of the electrode 11 and obtain real-time temperature data. At least one temperature sensing element 20 is embedded in the electrode 11 in the form of an oblique drilling, and its extension direction forms a certain angle with the first surface 110. This oblique layout enables the sensing module of the temperature sensing element 20 to more deeply detect the thermal environment inside the electrode 11, especially the area close to the heat source. At least one temperature sensing element 20 is embedded horizontally along the surface direction, ensuring direct and continuous monitoring of the temperature of the electrode 11 and reducing the process difficulty. This hybrid layout simplifies the processing technology while more comprehensively reflecting the thermal environment of the power device, improving the accuracy of junction temperature detection, and is conducive to maintaining the long-term stability and reliability of the device.

[0062] In another example, if Figure 8 As shown, in the above embodiment, the drilling position can also be selected on the bottom surface of the electrode 11 (i.e., the first surface and the surface opposite to the first surface), and the electrode 11 is first drilled to a certain depth in a direction perpendicular to the first surface, and then drilled to different depths in a radial direction (i.e., a direction parallel to the first surface) and an oblique direction (i.e., a direction forming an angle with the first surface), and a calibrated temperature sensing element 20 such as a thermistor is embedded in each hole.

[0063] In another example, Figure 8 As shown, in the above embodiment, the drilling path can also select a curved path, and multiple different positions are selected on the surface of the electrode 11 (i.e., the first surface, the surface opposite to the first surface, and the side wall surface), and the electrode 11 is drilled to a certain depth along the curve from these positions. The holes are drilled to different depths. At the end point where the drilling stops, the tangent of the curve is radially (i.e., in a direction parallel to the first surface) and obliquely (i.e., in a direction forming an angle with the first surface), and the extension direction of the curve refers to the direction of the arrow in the figure, and a calibrated temperature sensing element 20 such as a thermistor is embedded in each hole.

[0064] Specifically, the extension path in the embodiment of the present application can also be selected from a variety of straight lines, curves and broken lines (not shown in the figure), and those skilled in the art can make the selection according to specific needs, and this embodiment does not make any specific limitation.

[0065] In some optional embodiments, such as Fig. 9 As shown (the extension direction of the temperature sensing element is at a certain angle to the first surface), the electrode 11 has multiple regions of equal volume, and each temperature sensing element 20 is independently located in different regions. By dividing the electrode 11 into multiple regions of equal volume, a uniform temperature measurement grid can be formed inside the electrode 11 to ensure the comprehensiveness and balance of temperature monitoring. The temperature sensing element 20 in each region works independently, and can accurately capture the temperature changes in the region, avoiding the influence of local temperature deviation caused by single-point temperature measurement on the overall evaluation. This multi-point independent monitoring method can construct a temperature distribution map inside the electrode 11, providing rich and accurate temperature data for reverse junction temperature. During the operation of the device, each independent temperature sensing element 20 continuously detects the temperature of the region, and these data are then input into the data processing unit. Based on the thermal conductivity model of the device, the data processing unit can use the temperature information of multiple regions to quickly calculate the chip junction temperature through an iterative algorithm. Since the data of each temperature sensing element 20 is collected independently, this real-time monitoring can instantly reflect the temperature changes inside the power device, and is more sensitive to the judgment of high temperature anomalies or heat source locations, thereby improving the accuracy of junction temperature evaluation.

[0066] In addition, the independent temperature sensing element layout also improves the reliability of the system. The failure of a single temperature sensing element will not affect the overall monitoring effect, and other temperature sensing elements can still provide necessary temperature data to ensure the continuity and stability of junction temperature monitoring. This is especially critical for devices such as power devices that are extremely sensitive to temperature, and can effectively prevent the risk of performance degradation or failure caused by excessive junction temperature.

[0067] For example, Fig. 9 A schematic diagram of the division of the electrode area is shown in FIG. Fig. 9 As shown, the electrode is divided into four regions of equal volume, and four temperature sensing elements 20 are embedded in the four regions correspondingly at inclined angles, that is, the extension direction of each temperature sensing element 20 has an acute angle or an obtuse angle with the first surface of the electrode 11 .

[0068] In some optional embodiments, such as Fig.10 As shown in FIG. 1 (the extension direction of the temperature sensing element is perpendicular to the first surface), the multiple areas divided in the electrode 11 can also be arranged in a matrix, and the first ends 21 of the multiple temperature sensing elements are independently located in different areas. The layout of the temperature sensing elements arranged in a matrix can form a two-dimensional or three-dimensional temperature monitoring network, which is conducive to analyzing the thermal behavior of the power device under complex working conditions.

[0069] In the above optional implementation, if Fig.10As shown, the electrode 11 is divided into a plurality of regions of equal volume arranged in a matrix, and the first end portion 21 of each temperature sensing element is independently positioned in these different regions. This layout strategy is conducive to achieving high-precision and real-time monitoring of the junction temperature of the power device. Among them, the regional division of the matrix arrangement is like building a regular and evenly distributed temperature monitoring network inside the electrode 11. Each region is independent and does not interfere with each other, ensuring the comprehensiveness and accuracy of temperature monitoring. This layout enables the sensing module of the temperature sensing element to evenly cover the key hot spots inside the electrode 11, not only detecting local hot spots, but also capturing subtle changes in temperature, providing more accurate and rich data support for junction temperature calculation.

[0070] For example, Fig.10 Another schematic diagram of the division of electrode regions is shown in FIG. Fig.10 As shown, the electrode 11 is divided into a plurality of regions arranged in a matrix, and the first end portion 21 of each temperature sensing element is vertically embedded in a different region, that is, the extension direction of the temperature sensing element is perpendicular to the first surface of the electrode 11 .

[0071] In some optional embodiments, such as Figure 3 As shown, the power semiconductor device has a first electrode 1101 and a second electrode 1102 located on opposite sides, and the temperature sensing element is located inside the first electrode 1101 and / or the second electrode 1102. This embodiment can monitor the temperature state of the two electrodes at the same time, or only detect the temperature state of one electrode, and has a wider coverage for temperature detection, and is more sensitive to the judgment of high temperature anomalies or heat source locations, thereby improving the accuracy of junction temperature evaluation.

[0072] In some optional embodiments, such as Fig.11As shown, the electrode 11 has a plurality of receiving holes 111 extending inward from the surface, the temperature sensing element 20 is located in the receiving hole 111 and corresponds to the receiving hole 111 one by one, the surface of the electrode 11 having the target receiving hole is the target surface 1110, the target receiving hole is any one of the plurality of receiving holes 111, the temperature sensing element 20 arranged in the target receiving hole has a first end point at one end close to the bottom of the target receiving hole, the shortest distance between the first end point and the target surface is a first spacing L, and the first spacing L of at least two temperature sensing elements 20 is different. The figure only shows the temperature sensing element 20 in one receiving hole 111 by way of example, and in order to clearly show the receiving hole 111, the temperature sensing elements 20 in other receiving holes 111 are not shown, wherein the first spacing L shown in the receiving hole 111 where the temperature sensing element 20 is not shown refers to the first spacing L when the temperature sensing element 20 contacts the bottom of the hole when the temperature sensing element 20 is arranged. By setting receiving holes 111 of different depths in the electrode 11 and embedding the temperature sensing element 20, a layered temperature monitoring network is constructed. Each temperature sensing element 20 can independently detect the temperature at its depth. Due to the difference in depth, the temperature sensing element 20 can capture the temperature changes of different thermal layers inside the electrode 11. This multi-depth temperature data provides more comprehensive information for inferring the junction temperature. Compared with single-depth temperature measurement, multi-level temperature monitoring can more carefully reflect the temperature distribution inside the electrode 11, reduce the measurement error caused by uneven heat conduction, and significantly improve the accuracy of junction temperature measurement.

[0073] In addition, if Fig.11 As shown, since the first spacing L of each temperature sensing element 20 is different, that is, its position inside the electrode 11 is different, the junction temperature calculation result can be verified and corrected from multiple angles, thereby enhancing the reliability of the system. Even if an individual temperature sensing element 20 fails, the data of the temperature sensing elements 20 at other depths can still be used as a reference to ensure the stability of the junction temperature evaluation.

[0074] In some optional embodiments, the temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor and a diode thermometer. By selecting or combining these three temperature sensing elements, a temperature monitoring system with complementary performance can be constructed.

[0075] Specifically, this embodiment uses a thermal resistor as a temperature sensing element, which has a stable temperature coefficient and provides high-precision temperature measurement. Due to its high measurement accuracy, it can capture subtle temperature fluctuations, which is crucial for evaluating the thermal stress distribution inside the device, especially for accurate monitoring of junction temperature.

[0076] In the embodiment of the present application, the data processing unit calculates the junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the received temperature data obtained by the temperature sensing element, and the preset model.

[0077] Specifically, the input of the preset model is the temperature data measured by the temperature sensing element and the position information of the target position (such as spatial position coordinates), and the output is the chip junction temperature. The thermal conductivity model in the preset model is based on Fourier's heat conduction law (1) and the thermal conduction differential equation formula (2), combined with the structural size parameters of the specific device and the thermal physical parameters of the constituent materials. And the chip's operating parameters Get specific , thus obtaining the preset model formula (3) to output the chip junction temperature.

[0078]

[0079]

[0080]

[0081] In the above formulas, represents the heat flux density, represents thermal conductivity, represents the spatial temperature gradient, Indicates temperature, Indicates time, represents density, represents the specific heat capacity, Indicates the internal heating power of the system; Indicates the chip junction temperature, Indicates the spatial coordinates of the junction temperature, Represents the spatial position coordinates and temperature detected by the sensor module of the nth temperature sensing element.

[0082] Exemplarily, the data processing unit includes:

[0083] A receiving module, used to obtain the position information of the target position corresponding to the temperature sensing element and the temperature data obtained by the temperature sensing element;

[0084] A preset model is used to calculate the junction temperature information of the power semiconductor device;

[0085] Response time monitoring module: regularly sends test pulse signals to the sensor in the target temperature sensing element, records the time from when the sensor receives the pulse signal to when it returns the temperature data, and calculates the response time corresponding to the target temperature sensing element;

[0086] Accuracy verification module: determining the measurement accuracy of the sensor corresponding to the multiple preset temperatures according to the temperature data of the sensor and the data of the multiple preset temperatures;

[0087] Data processing module: stores the response time and measurement accuracy corresponding to the sensor, and generates a change curve of the target performance within a historical time period, the target performance including the above response time and the above measurement accuracy.

[0088] Through the response time monitoring module, the response time corresponding to the target temperature sensing element is obtained to evaluate the response speed of the sensor. If the response time is detected to exceed the preset threshold, the sensor is determined to be aged or disconnected. Through the accuracy verification module, the sensor is regularly placed in a standard environment with different preset temperatures for calibration, or multiple sensors are used in an environment with a preset temperature for mutual verification. Once the temperature accuracy drops by more than the set threshold, the data processing unit will mark the data of the sensor as unreliable. Through the data processing module, the response time and measurement accuracy corresponding to the sensor are stored, and a change curve of the above performance in a historical time period is generated. The change curve is used to characterize the sensor performance in the temperature sensing element to analyze the aging trend of the sensor and predict its remaining service life. In addition, the change curve will also display the preset temperature corresponding to the measurement accuracy performance.

[0089] The above implementation method ensures that the sensor is in good working condition, timely detects and warns of potential aging or failures, reduces the distortion of monitoring data caused by sensor problems, ensures the accuracy of sensor measurement results, maintains high credibility of data even under complex working conditions, and improves the reliability of junction temperature analysis and fault diagnosis of power devices.

[0090] According to an embodiment of the present application, a junction temperature monitoring method running on a mobile terminal, a computer terminal or a similar computing device is also provided.

[0091] Take running on a mobile terminal as an example. Fig.12 FIG. 1 is a hardware structure block diagram of a mobile terminal of a junction temperature monitoring method according to an embodiment of the present invention. Fig.12 As shown, the data processing unit may include one or more ( Fig.12 Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Fig.12 The structure shown is only for illustration and does not limit the structure of the mobile terminal. Fig.12 More or fewer components as shown, or with Fig.12 Different configurations shown.

[0092] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the junction temperature monitoring method in the embodiment of the present invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the above method is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories can be connected to the mobile terminal via a network. Examples of the above-mentioned network include but are not limited to the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof. The transmission device 106 is used to receive or send data via a network. The above-mentioned specific examples of the network may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0093] Fig.13 FIG. 1 is a flow chart of a junction temperature monitoring method according to an embodiment of the present application. Fig.13 As shown, the data processing unit applied to the above junction temperature monitoring system, the junction temperature monitoring method includes:

[0094] S01. Obtaining temperature information provided by a temperature sensing element in a junction temperature monitoring system and position information of a target position, wherein the target position is a position of the temperature sensing element in an electrode of a power semiconductor device in the junction temperature monitoring system.

[0095] In step S01, the temperature sensing element (such as a thermal resistor) continuously monitors the temperature inside the electrode and provides accurate temperature information to the data processing unit. At the same time, the data processing unit records its specific position in the electrode - the target position. Since the temperature sensing element is directly embedded in the electrode and is close to the heat source in the chip junction area, it can reduce the delay and distortion in heat conduction, ensure the high accuracy and immediacy of the temperature data, and provide a key basis for subsequent junction temperature calculations.

[0096] S02. Generate junction temperature information of the power semiconductor device according to the temperature information, the position information and the preset model.

[0097] In step S02, the data processing unit processes the temperature and position information obtained in step S01 in combination with the preset model. The preset model integrates the geometric structure of the device, the thermal physical parameters of the material and the distribution of the heat source, takes the temperature data of the detection point and the position corresponding to the detection point as input, and iteratively calculates the real-time value of the chip junction temperature by solving the heat conduction equation. The precise setting of the preset model reduces the calculation error and ensures the high accuracy of the junction temperature assessment. The real-time performance is reflected in the ability of the model to continuously receive and process the latest temperature and position data, instantly update the junction temperature information, and realize dynamic monitoring of the internal thermal state of the device.

[0098] Through the synergistic effect of the above steps, the junction temperature monitoring method of the present application can continuously and accurately output the junction temperature information of the power semiconductor device, realize high-precision and real-time monitoring of the junction temperature of the power device, and ensure that accurate junction temperature data can be obtained under various operating conditions, thereby improving the accuracy of device status monitoring and operating condition assessment.

[0099] In addition, the junction temperature monitoring method of the present application can also be combined with the control strategy of the power semiconductor device to achieve dynamic thermal management. For example, when the junction temperature rises, the system can automatically adjust the operating parameters of the device, such as reducing the current or power to reduce heat generation; or start the heat dissipation system, such as fans, liquid cooling, etc., to accelerate the dissipation of heat. This dynamic thermal management strategy can effectively extend the service life of the device and improve the overall performance of the system. At the same time, the method of the present application not only includes the monitoring of the current junction temperature, but also can predict the future trend of junction temperature changes based on historical data and models, providing key information for device health status diagnosis, life prediction and performance optimization, and then through long-term data collection and analysis, further optimize the preset model and improve the accuracy and reliability of junction temperature monitoring.

[0100] Exemplarily, the input of the preset model is the temperature data measured by the temperature sensing element and the spatial position coordinates of the target position, and the output is the chip junction temperature. The formula (3) of the preset model is obtained based on Fourier's heat conduction law (1) and the heat conduction differential equation formula (2). It represents a generalized function, and its actual function form is composed of the structural size parameters of the specific device and the thermal physical parameters of the material it is made of. And the chip's operating parameters Determined.

[0101]

[0102]

[0103]

[0104] In the above formulas, represents the heat flux density, represents thermal conductivity, represents the spatial temperature gradient, Indicates temperature, Indicates time, represents density, represents the specific heat capacity, Indicates the internal heating power of the system; Indicates the chip junction temperature, Indicates the spatial coordinates of the junction temperature, Represents the spatial position coordinates and temperature detected by the sensor module of the nth temperature sensing element.

[0105] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0106] The junction temperature monitoring system of the present application directly embeds a high-precision temperature sensing element inside the electrode to directly and accurately obtain the temperature data inside the electrode, and then combines a preset model and a real-time and efficient data processing unit to calculate and output the junction temperature information of the power semiconductor device in real time, thereby achieving accurate and real-time monitoring of the junction temperature of the power semiconductor device, significantly improving the accuracy of device status monitoring and operating condition assessment, and solving the problem of low accuracy and reliability of real-time detection of junction temperature in related technologies, resulting in poor accuracy of status and operating condition assessment of power semiconductor devices.

[0107] Obviously, those skilled in the art should understand that the above modules or steps of the present invention can be implemented by a general computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0108] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0109] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A junction temperature monitoring system, characterized in that: It includes power semiconductor devices, temperature sensing elements and data processing units, wherein: The temperature sensing element is arranged at a target position in the electrode of the power semiconductor device, and the temperature sensing element is used to obtain the temperature of the target position; A data processing unit is electrically connected to the temperature sensing element, and is used to calculate the junction temperature information of the power semiconductor device according to the position information of the target position corresponding to the temperature sensing element, the received temperature data obtained by the temperature sensing element, and a preset model.

2. The junction temperature monitoring system according to claim 1, characterized in that: The temperature sensing element has a first end and a second end opposite to each other. The temperature sensing element extends from the second end to the first end. The first end is located inside the electrode, and the second end is located inside the electrode.

3. The junction temperature monitoring system according to claim 2, characterized in that: The temperature sensing elements are multiple and spaced apart, and the extension paths of the multiple temperature sensing elements are independently selected from one or more of a straight line, a curve and a broken line.

4. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a first surface; The extension path of the temperature sensing element has at least one path unit connected in sequence, and the extension directions of adjacent path units are different. When the extension path is a curve, the extension direction of the target path unit is the extension direction of the tangent of the target path unit. The target path unit is any one of the path units, and each of the path units independently satisfies one of the following conditions: An extending direction of the path unit is parallel to the first surface; An angle is formed between an extension direction of the path unit and the first surface.

5. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a plurality of regions with equal volumes, and the plurality of temperature sensing elements are independently located in different regions.

6. The junction temperature monitoring system according to claim 3, characterized in that: The electrode has a plurality of regions arranged in a matrix, and the first ends of the plurality of temperature sensing elements are independently located in different regions.

7. The junction temperature monitoring system according to claim 1, characterized in that: The power semiconductor device has a first electrode and a second electrode located at two opposite sides, and the temperature sensing element is located inside the first electrode and / or the second electrode.

8. The junction temperature monitoring system according to any one of claims 1 to 7, characterized in that: The electrode has a plurality of accommodating holes extending inward from the surface, the temperature sensing element is located in the accommodating holes and corresponds to the accommodating holes one by one, the surface of the electrode having the target accommodating hole is the target surface, the target accommodating hole is any one of the plurality of accommodating holes, the temperature sensing element arranged in the target accommodating hole has a first endpoint at an end portion on one side close to the bottom of the target accommodating hole, the shortest distance between the first endpoint and the target surface is a first spacing, and the first spacing of at least two of the temperature sensing elements is different.

9. The junction temperature monitoring system according to any one of claims 1 to 7, characterized in that: The temperature sensing element includes any one or more of a thermocouple, a thermal resistor, a thermistor and a diode thermometer.

10. A junction temperature monitoring method, characterized in that: A data processing unit applied to a junction temperature monitoring system according to any one of claims 1 to 9, wherein the junction temperature monitoring method comprises: Acquire temperature information provided by a temperature sensing element in the junction temperature monitoring system and position information of a target position, wherein the target position is a position of the temperature sensing element in an electrode of a power semiconductor device in the junction temperature monitoring system; The junction temperature information of the power semiconductor device is output according to the temperature information, the position information and a preset model.

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