Cover plate and electronic equipment

Abstract

The invention provides a cover plate and electronic equipment. The cover plate provided by the embodiment of the invention comprises a plurality of micro-nano structures positioned on the surface of the cover plate, and the roughness Ra of the surfaces of the plurality of micro-nano structures of the cover plate is more than or equal to 12nm and less than or equal to 100nm. The cover plate provided by the embodiment of the invention has relatively low reflectivity and super-hydrophobicity, and has a relatively good display effect when being applied to a display screen of the electronic equipment.

Description

Technical Field

[0001] The present application relates to the field of electronics, and in particular to a cover plate and an electronic device. Background Art

[0002] In order to increase the service life of the display screen of the electronic device, a protective cover is usually provided on the display surface of the display screen of the electronic device to improve the display screen's performance of impact resistance, drop resistance, etc. However, the existing protective cover has a high reflectivity, which affects the display effect of the electronic device. Summary of the invention

[0003] The embodiment of the present application provides a cover plate, which has low reflectivity and super-hydrophobicity and has a good display effect when applied to a display screen of an electronic device.

[0004] A first aspect of the present application provides a cover plate, comprising a plurality of micro-nano structures located on a surface of the cover plate, wherein the range of the roughness Ra of the surface of the cover plate having the plurality of micro-nano structures is: 12 nm ≤ Ra ≤ 100 nm.

[0005] A second aspect of the present application provides a cover plate, comprising a plurality of micro-nano structures located on a surface of the cover plate, wherein a depth a of the micro-nano structures is in the range of 50 nm ≤ a ≤ 180 nm.

[0006] A third aspect of the present application provides an electronic device, comprising:

[0007] A display screen having a display surface;

[0008] The cover plate according to the first aspect or the second aspect of the present application, wherein the cover plate is stacked on the display surface of the display screen to protect the display screen; and

[0009] A processor is electrically connected to the display screen and is used to control the display screen to display.

[0010] The cover plate of this embodiment includes a plurality of micro-nano structures, and the range of the roughness Ra of the surface of the cover plate with the plurality of micro-nano structures is: 12nm≤Ra≤100nm. By designing the sizes of the plurality of micro-nano structures, the range of the roughness Ra of the surface of the cover plate with the plurality of micro-nano structures is: 12nm≤Ra≤100nm, so that the surface of the cover plate with the plurality of micro-nano structures not only has super hydrophobic properties, but also has ultra-low reflectivity (i.e., ultra-low reflection effect) and high light transmittance. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0012] Figure 1 It is a schematic diagram of the planar structure of a cover plate according to an embodiment of the present application.

[0013] Figure 2 The cover edge of an embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0014] Figure 3 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0015] Figure 4 It is a schematic diagram of the cross-sectional structure of the hardened layer of one embodiment of the present application.

[0016] Figure 5 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0017] Figure 6 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0018] Figure 7 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0019] Figure 8 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0020] Fig. 9 The cover edge of another embodiment of the present application Figure 1 Schematic diagram of the cross-sectional structure in the AA direction.

[0021] Fig.10 It is a schematic diagram of a process for preparing a cover plate according to an embodiment of the present application.

[0022] Fig.11 It is a schematic flow chart of a method for preparing a cover plate according to another embodiment of the present application.

[0023] Fig.12 It is a schematic flow chart of a method for preparing a cover plate according to another embodiment of the present application.

[0024] Fig.13 It is a schematic flow chart of a method for preparing a cover plate according to another embodiment of the present application.

[0025] Fig.14 It is a schematic flow chart of a method for preparing a cover plate according to another embodiment of the present application.

[0026] Fig.15 It is a schematic diagram of the structure of an electronic device according to an embodiment of the present application.

[0027] Fig.16 It is a schematic diagram of a partial exploded structure of an electronic device according to an embodiment of the present application.

[0028] Fig.17 It is a circuit block diagram of an electronic device according to an embodiment of the present application.

[0029] Description of reference numerals:

[0030] 100-cover plate, 10-micro-nano structure, 20-substrate layer, 21-raised structure, 30-base layer, 40-hardening layer, 41-silicon nitride layer, 43-silicon oxynitride layer, 50-anti-fingerprint layer, 400-electronic device, 410-display screen, 411-display surface, 420-middle frame, 430-processor, 440-housing, 441-light-transmitting part, 450-memory, 570-camera module. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0032] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally includes steps or units that are not listed, or optionally includes other steps or units inherent to these processes, methods, products or devices.

[0033] The technical solutions in the embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0034] It should be noted that, for the convenience of explanation, in the embodiments of the present application, the same figure marks represent the same components, and for the sake of brevity, detailed descriptions of the same components are omitted in different embodiments.

[0035] In order to increase the service life of the display screen of the electronic device, a protective cover is usually provided on the display surface of the display screen of the electronic device to improve the display screen's performance of impact resistance, drop resistance, etc. However, the existing protective cover has a high reflectivity, which affects the display effect of the electronic device.

[0036] See also Figure 1 and Figure 2 An embodiment of the present application provides a cover plate 100, which includes a plurality of micro-nano structures 10 located on the surface of the cover plate 100, and the range of the surface roughness Ra of the cover plate 100 having the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm.

[0037] The cover plate 100 of the embodiment of the present application can be applied to electronic devices such as mobile phones, tablet computers, laptops, desktop computers, smart bracelets, smart watches, e-readers, game consoles, etc. The cover plate 100 of the embodiment of the present application can be used as a protective cover plate 100 for the display screen of an electronic device, and can also be used as a protective cover for the camera module of an electronic device. In the following embodiments of the present application, the cover plate 100 is applied to the protective cover plate 100 of the display screen of an electronic device for illustration, which should not be understood as a limitation on the cover plate 100 of the embodiment of the present application.

[0038] It should be noted that, when the cover plate 100 is applied to a display screen of an electronic device, the plurality of micro-nano structures 10 are arranged away from the display screen.

[0039] It is understandable that the multiple micro-nano structures 10 can be multiple protrusions or multiple recesses of micro-nano scale. The multiple protrusions or multiple recesses can be closely arranged in sequence, or there can be a certain gap. The term "multiple" in this application means greater than or equal to two.

[0040] Optionally, the roughness Ra of the surface of the cover plate 100 having the multiple micro-nano structures 10 may be, but is not limited to, 12nm, 15nm, 18nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, etc. If the roughness Ra of the surface of the cover plate 100 having the multiple micro-nano structures 10 is too small, the super hydrophobicity and ultra-low reflection effect (i.e., ultra-low reflectivity) of the cover plate 100 are reduced; if the roughness Ra of the surface of the cover plate 100 having the multiple micro-nano structures 10 is too large, the haze of the cover plate 100 is easily increased and whitened, thereby affecting the optical performance of the cover plate 100, and when applied to a display screen, affecting the display effect of the display screen. When the roughness Ra of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 12nm to 100nm, the surface of the cover plate 100 having the multiple micro-nano structures 10 not only has super hydrophobic properties, but also has ultra-low reflectivity, and the cover plate 100 has lower haze and is not easy to turn white. In addition, the cover plate 100 also has higher light transmittance.

[0041] Optionally, the water contact angle (also known as the water drop angle) of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 117°. Further, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 120°. Still further, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 130°. Still further, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 140°. Still further, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 150°. Still further, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is greater than or equal to 160°.

[0042] In some embodiments, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is 120° to 164°. In some other embodiments, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is 130° to 164°. In some other embodiments, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is 140° to 164°. In some other embodiments, the water contact angle of the surface of the cover plate 100 with the multiple micro-nano structures 10 is 150° to 164°.

[0043] In the embodiments of the present application, when a numerical value ranges from a to b is involved, unless otherwise specified, it means that the numerical value can be any numerical value between a and b, including the endpoint numerical value a and the endpoint numerical value b.

[0044] Specifically, the water contact angle of the surface of the cover plate 100 having the multiple micro-nano structures 10 can be but is not limited to 117°, 118°, 120°, 125°, 130°, 135°, 140°, 145°, 150°, 155°, 160°, 164°, etc.

[0045] Optionally, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 3%. Further, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 2.5%. Further, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 2%. Further, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 1.5%. Further, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 1%. Further, the reflectivity of the surface of the cover plate 100 with the multiple micro-nano structures 10 is less than or equal to 0.5%.

[0046] In some embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 3%. In some other embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 2.5%. In some other embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 2%. In some other embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 1.5%. In some other embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 1%. In some other embodiments, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 is 0.2% to 0.5%.

[0047] Specifically, the reflectivity of the surface of the cover plate 100 having the multiple micro-nano structures 10 can be but is not limited to 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.8%, 1.0%, 1.2%, 1.5%, 1.8%, 2.0%, 2.2%, 2.5%, 2.8%, 3%, etc.

[0048] Optionally, the haze H of the cover plate 100 is in the range of H≤10%. Specifically, the haze H of the cover plate 100 may be, but is not limited to, 0%, 0.1%, 0.3%, 0.5%, 1%, 1.5%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, etc. The cover plate 100 of the embodiment of the present application has a small haze, and when applied to the display screen of an electronic device, it will not affect the display of the display screen, and the display screen has a better display effect.

[0049] Furthermore, the range of the haze H of the cover plate 100 is: H≤8%. In this way, when the cover plate 100 is applied to the display screen of an electronic device, the display screen has a better display effect.

[0050] Furthermore, the range of the haze H of the cover plate 100 is: H≤6%. In this way, when the cover plate 100 is applied to the display screen of an electronic device, the display screen has a better display effect.

[0051] Furthermore, the range of the haze H of the cover plate 100 is: H≤4%. In this way, when the cover plate 100 is applied to the display screen of an electronic device, the display screen has a better display effect.

[0052] Furthermore, the range of the haze H of the cover plate 100 is: H≤2%. In this way, when the cover plate 100 is applied to the display screen of an electronic device, the display screen has a better display effect.

[0053] Optionally, the light transmittance of the cover plate 100 is greater than or equal to 96.5%. Further, the light transmittance of the cover plate 100 is greater than or equal to 97%. Further, the light transmittance of the cover plate 100 is greater than or equal to 98%. Further, the light transmittance of the cover plate 100 is greater than or equal to 99%. Specifically, the light transmittance of the cover plate 100 may be, but is not limited to, 96.5%, 97%, 97.5%, 98%, 98.5%, 99%, 99.5%, etc.

[0054] The cover plate 100 of this embodiment includes a plurality of micro-nano structures 10, and the range of the roughness Ra of the surface of the cover plate 100 with the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm. By designing the sizes of the plurality of micro-nano structures 10, the range of the roughness Ra of the surface of the cover plate 100 with the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm, so that the surface of the cover plate 100 with the plurality of micro-nano structures 10 not only has super hydrophobic properties, but also has ultra-low reflectivity (i.e., ultra-low reflection effect) and high light transmittance.

[0055] Optionally, the shape of the micro-nano structure 10 may be, but is not limited to, a parabola, a trapezoid, a cone, a pyramid, a truncated cone, a Gaussian model, a hemispherical shape, etc. When the micro-nano structure 10 is a parabola, it can achieve the same optical advantages as a cone, and the imprint mold is easier to make, which can better reduce the preparation cost; in addition, the wear resistance of the parabola is better than that of the cone, and the cone vertex is prone to stress concentration. Compared with the parabola, the trapezoid has weaker superhydrophobic performance and a rougher feel.

[0056] In some embodiments, the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤400nm. Specifically, the depth a of the micro-nano structure 10 may be, but is not limited to, 50nm, 60nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 250nm, 300nm, 350nm, 400nm, etc. If the depth a of the micro-nano structure 10 is too small, the super-hydrophobic performance and ultra-low reflection effect (i.e., ultra-low reflectivity) of the cover plate 100 are reduced; if the depth a of the micro-nano structure 10 is too large, the haze of the cover plate 100 is easily increased and whitened, thereby affecting the optical performance of the cover plate 100, and when applied to a display screen, affecting the display effect of the display screen.

[0057] Furthermore, the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤300nm. In this way, the cover plate 100 can have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0058] Furthermore, the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤200nm. In this way, the cover plate 100 can have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0059] Furthermore, the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤150nm. In this way, the cover plate 100 can have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0060] Furthermore, the depth a of the micro-nano structure 10 is in the range of 70nm≤a≤100nm. In this way, the cover plate 100 can have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0061] In some embodiments, the top width d of the micro-nano structure 10 is smaller than the bottom width c of the micro-nano structure 10. In this way, the surface of the cover plate 100 having the micro-nano structure 10 has better super-hydrophobicity and better ultra-low reflection effect, and has better wear resistance.

[0062] In some embodiments, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of: 0.02≤d / c<1. Specifically, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 can be, but is not limited to, 0.02, 0.05, 0.08, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.6, 0.7, 0.8, 0.9, 0.95, etc. If the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is too small, stress concentration is likely to occur at the top of the micro-nano structure 10, thereby reducing the wear resistance of the micro-nano structure 10; if the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is too large, the super-hydrophobic performance and ultra-low-reflective effect of the cover plate 100 are reduced, and the cover plate 100 may even have no super-hydrophobic performance or ultra-low-reflective effect.

[0063] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.02≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0064] Furthermore, the range of the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is: 0.05≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is within this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0065] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.08≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0066] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.08≤d / c≤0.4. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0067] In some embodiments, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤5000nm. Specifically, the bottom width c of the micro-nano structure 10 may be, but is not limited to, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 580nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, 3500nm, 4000nm, 4500nm, 5000nm, etc. If the bottom width c of the micro-nano structure 10 is too small, the difficulty of preparing the mold for preparing the micro-nano structure 10 is increased, the preparation cost of the cover plate 100 is increased, and stress is easily concentrated at the micro-nano structure 10 of the cover plate 100, thereby reducing the wear resistance of the cover plate 100; if the bottom width c of the micro-nano structure 10 is too large, when the cover plate 100 is applied to a display screen, it affects the emission of light from the pixel points of the display screen, affects the mixing of RGB light emitted from the pixel points, and thus easily generates flash points, affecting the display effect of the display screen. In addition, if the bottom width c of the micro-nano structure 10 is too large, the haze of the cover plate 100 will be increased, thereby reducing the light transmittance of the cover plate 100.

[0068] Furthermore, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤2000nm. When the bottom width of the micro-nano structure 10 is in this range, the cover plate 100 has better wear resistance and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0069] Furthermore, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤1000nm. When the bottom width of the micro-nano structure 10 is in this range, the cover plate 100 can have better wear resistance, and is not prone to flash points when applied to a display screen, so that the display screen has a better display effect.

[0070] Furthermore, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤500nm. When the bottom width of the micro-nano structure 10 is in this range, the cover plate 100 can have better wear resistance, and is not prone to flash points when applied to a display screen, so that the display screen has a better display effect.

[0071] In some embodiments, the top width d of the micro-nano structure 10 is in the range of 0 nm ≤ d ≤ 5000 nm. Specifically, the top width d of the micro-nano structure 10 may be, but is not limited to, 0 nm, 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 150 nm, 200 nm, 300 nm, 400 nm, 500 nm, 800 nm, 1000 nm, 1500 nm, 2000 nm, 2500 nm, 3000 nm, 3500 nm, 4000 nm, 4500 nm, 5000 nm, etc. If the top width d of the micro-nano structure 10 is too small, stress is easily concentrated on the top of the micro-nano structure 10, reducing the wear resistance of the micro-nano structure 10 of the cover plate 100; if the top width d of the micro-nano structure 10 is too large, the super-hydrophobic performance and ultra-low reflection effect of the cover plate 100 are reduced, and even the cover plate 100 has no super-hydrophobic performance or ultra-low reflection effect.

[0072] Furthermore, the top width d of the micro-nano structure 10 is in the range of 5nm≤d≤1000nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 has better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0073] Furthermore, the top width d of the micro-nano structure 10 is in the range of 5nm≤d≤500nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0074] Furthermore, the top width d of the micro-nano structure 10 is in the range of 10 nm ≤ d ≤ 200 nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 has better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0075] Furthermore, the top width d of the micro-nano structure 10 is in the range of 10 nm ≤ d ≤ 100 nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 has better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0076] In some embodiments, the duty cycle f of the micro-nano structure 10 is in the range of 0.7≤f≤1, wherein the duty cycle f is the ratio of the bottom width c of the micro-nano structure 10 to the period b of the micro-nano structure 10, that is, f=c / b. Specifically, the duty cycle f of the micro-nano structure 10 may be, but is not limited to, 0.7, 0.73, 0.75, 0.78, 0.8, 0.83, 0.85, 0.88, 0.9, 0.93, 0.95, 0.98, 1, etc. The higher the duty cycle f of the micro-nano structure 10, the better the ultra-low reflection effect and super-hydrophobic performance of the surface of the cover plate 100 having multiple micro-nano structures 10. When the duty cycle f of the micro-nano structure 10 is too small, the ultra-low reflection effect and super-hydrophobic performance of the surface of the cover plate 100 having multiple micro-nano structures 10 are reduced.

[0077] Furthermore, the duty cycle f of the micro-nano structure 10 is in the range of 0.8≤f≤1. When the duty cycle f of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having multiple micro-nano structures 10 has better ultra-low reflection effect and super-hydrophobic performance.

[0078] Furthermore, the duty cycle f of the micro-nano structure 10 is in the range of 0.9≤f≤1. When the duty cycle f of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having multiple micro-nano structures 10 has better ultra-low reflection effect and super-hydrophobic performance.

[0079] In some embodiments, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤5000nm. Specifically, the period b of the micro-nano structure 10 may be, but is not limited to, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 580nm, 600nm, 700nm, 800nm, 900nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, 3500nm, 4000nm, 4500nm, 5000nm, etc. If the period b of the micro-nano structure 10 is too small, the difficulty of preparing the mold for preparing the micro-nano structure 10 is increased, the preparation cost of the cover plate 100 is increased, and stress is easily concentrated at the micro-nano structure 10 of the cover plate 100, thereby reducing the wear resistance of the cover plate 100; if the period b of the micro-nano structure 10 is too large, when the cover plate 100 is applied to a display screen, it affects the emission of light from the pixel points of the display screen, affects the mixing of the RGB light emitted by the pixel points, and thus easily generates flash points, affecting the display effect of the display screen.

[0080] Furthermore, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤2000nm. When the period of the micro-nano structure 10 is in this range, the cover plate 100 has better wear resistance and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0081] Furthermore, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤1000nm. When the period of the micro-nano structure 10 is in this range, the cover plate 100 has better wear resistance and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0082] Furthermore, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤500nm. When the period of the micro-nano structure 10 is in this range, the cover plate 100 has better wear resistance and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0083] See also Figure 3 In some embodiments, the cover plate 100 includes a substrate layer 20 and a hardening layer 40. The substrate layer 20 includes a plurality of protruding structures 21 located on the surface of the substrate layer 20; the hardening layer 40 is stacked on the surface of the substrate layer 20 having the plurality of protruding structures 21, and the plurality of protruding structures 21 make the hardening layer 40 away from the surface of the substrate layer 20 to form the plurality of micro-nano structures 10. In this embodiment, by providing the hardening layer 40 on the substrate layer 20, the cover plate 100 can have super-hydrophobic properties and ultra-low reflection effects, and at the same time have high wear resistance, so that the cover plate 100 has good wear resistance.

[0084] It should be noted that the thickness of the hardened layer 40 at each position is consistent, so that after the hardened layer 40 is stacked on the substrate layer 20, the multiple protrusion structures 21 of the substrate layer 20 will not be filled by the hardened layer 40, thereby forming multiple micro-nano structures 10 similar to the multiple protrusion structures 21 on the surface of the hardened layer 40 away from the substrate layer 20.

[0085] Optionally, the material of the substrate layer 20 may be, but is not limited to, a transparent substrate such as glass or sapphire.

[0086] Optionally, the thickness of the hardened layer 40 is 10nm to 1000nm. Specifically, the thickness of the hardened layer 40 may be, but is not limited to, 10nm, 30nm, 50nm, 100nm, 150nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, etc. If the thickness of the hardened layer 40 is too thin, the improvement of the wear resistance of the cover plate 100 is limited; if the thickness of the hardened layer 40 is too thick, the cost of the cover plate 100 is increased and the optical performance of the cover plate 100 is reduced.

[0087] Optionally, the nanohardness (also called microhardness) of the hardened layer 40 is greater than or equal to 15 GPa. Further, the nanohardness of the hardened layer 40 is greater than or equal to 16 GPa. Still further, the nanohardness of the hardened layer 40 is greater than or equal to 17 GPa. Specifically, the nanohardness of the hardened layer 40 can be, but is not limited to, 15 GPa, 16 GPa, 17 GPa, 18 GPa, 19 GPa, 20 GPa.

[0088] See also Figure 4 In some embodiments, the hardened layer 40 includes a multi-layer silicon nitride layer 41 and a multi-layer silicon nitride oxide layer 43, and the silicon nitride layer 41 and the silicon nitride oxide layer 43 are alternately stacked in sequence. In the present embodiment, the silicon nitride layer 41 and the silicon nitride oxide layer 43 both have a high hardness, so that the cover plate 100 can have a high wear resistance. In addition, when only the silicon nitride layer 41 is used as the hardened layer 40, the cover plate 100 will easily produce a hue, affecting the optical properties of the cover plate 100 such as the transmittance. In the present embodiment, by alternately stacking silicon nitride with a higher refractive index and silicon nitride oxide with a lower refractive index, the hardened layer 40 has a higher transmittance, so that when the cover plate 100 is applied to a display screen, it will not affect the display effect of the display screen.

[0089] Optionally, the number of silicon nitride layers 41 in the hardened layer 40 is 3 to 15. Specifically, the number of silicon nitride layers 41 in the hardened layer 40 can be, but is not limited to, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, etc.

[0090] Optionally, the number of silicon oxynitride layers 43 in the hardened layer 40 is 3 to 15. Specifically, the number of silicon oxynitride layers 43 in the hardened layer 40 can be, but is not limited to, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, etc.

[0091] Optionally, the thickness of the silicon nitride layer 41 is 5nm to 150nm. Specifically, the thickness of the silicon nitride layer 41 can be, but is not limited to, 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, etc. If the thickness of the silicon nitride layer 41 is too thin, the complexity of the preparation process of the hardening layer 40 is increased, and each layer has a tolerance for different thicknesses. If the thickness is too thin, hue is likely to appear, so that when the cover plate 100 is applied to a display screen, the display effect of the display screen is affected; if the thickness of the silicon nitride layer 41 is too thick, stress concentration is likely to occur, so that the silicon nitride layer 41 is prone to cracking.

[0092] Furthermore, the thickness of the silicon nitride layer 41 is 10 nm to 100 nm. When the thickness of the silicon nitride layer 41 is within this range, the preparation process of the silicon nitride layer 41 can be simplified, the generation of color phase can be avoided, and the cracking of the silicon nitride layer 41 caused by stress concentration can be avoided.

[0093] Furthermore, the thickness of the silicon nitride layer 41 is 15 nm to 80 nm. When the thickness of the silicon nitride layer 41 is within this range, the preparation process of the silicon nitride layer 41 can be simplified, the generation of color phase can be avoided, and the cracking of the silicon nitride layer 41 caused by stress concentration can be avoided.

[0094] Optionally, the thickness of the silicon oxynitride layer 43 is 5nm to 150nm. Specifically, the thickness of the silicon oxynitride layer 43 can be, but is not limited to, 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150nm, etc. If the thickness of the silicon oxynitride layer 43 is too thin, the complexity of the preparation process of the hardening layer 40 is increased, and each layer has a tolerance for different thicknesses. If the thickness is too thin, hue is likely to appear, so that when the cover plate 100 is applied to a display screen, the display effect of the display screen is affected; if the thickness of the silicon oxynitride layer 43 is too thick, stress concentration is likely to occur, so that the silicon oxynitride layer 43 is prone to cracking.

[0095] Furthermore, the thickness of the silicon oxynitride layer 43 is 10 nm to 100 nm. When the thickness of the silicon oxynitride layer 43 is within this range, the preparation process of the silicon oxynitride layer 43 can be simplified, the generation of color can be avoided, and the cracking of the silicon oxynitride layer 43 caused by stress concentration can be avoided.

[0096] Furthermore, the thickness of the silicon oxynitride layer 43 is 15 nm to 80 nm. When the thickness of the silicon oxynitride layer 43 is within this range, the preparation process of the silicon oxynitride layer 43 can be simplified, the generation of color can be avoided, and the cracking of the silicon oxynitride layer 43 caused by stress concentration can be avoided.

[0097] See also Figure 5 In some embodiments, the cover plate 100 further includes a primer layer 30, which is disposed between the base layer 20 and the hardening layer 40 to improve the connection strength between the base layer 20 and the hardening layer 40, thereby improving the reliability of the cover plate 100. In other words, the primer layer 30 is used to improve the adhesion of the hardening layer 40 on the base layer 20.

[0098] Optionally, the primer layer 30 may be, but is not limited to, a silicon dioxide layer.

[0099] Optionally, the thickness of the base layer 30 is 5nm to 20nm. Specifically, the thickness of the base layer 30 may be, but is not limited to, 5nm, 6nm, 8nm, 10nm, 12nm, 14nm, 16nm, 18nm, 20nm, etc. If the thickness of the base layer 30 is too thin, the connection between the base layer 30 and the hardening layer 40 is weak, that is, the adhesion of the hardening layer 40 on the base layer 20 is reduced; if the thickness of the base layer 30 is too thick, when the cover plate 100 is subjected to external force or friction, it is easy to crack or fall off from the position of the base layer 30, reducing the wear resistance of the cover plate 100.

[0100] See also Figure 6 In other embodiments, the cover plate 100 includes a substrate layer 20 and a hardening layer 40. The hardening layer 40 is stacked on the surface of the substrate layer 20, and the hardening layer 40 includes a plurality of micro-nano structures 10 located on the surface of the hardening layer 40 away from the substrate layer 20. In this embodiment, by arranging the hardening layer 40 on the substrate layer 20, the cover plate 100 can have super-hydrophobic properties and ultra-low-reflection effects, and at the same time have high wear resistance, so that the cover plate 100 has good wear resistance.

[0101] It can be understood that in this embodiment, the surface of the substrate layer 20 does not have the protruding structure 21 , and the plurality of micro-nano structures 10 are obtained by etching the surface of the hardening layer 40 .

[0102] In this embodiment, the thickness of the hardened layer 40 is 1 μm to 4 μm. Specifically, the thickness of the hardened layer 40 may be, but is not limited to, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm, 3 μm, 3.2 μm, 3.4 μm, 3.6 μm, 3.8 μm, 4 μm, etc. If the thickness of the hardened layer 40 is too thin, when etching a plurality of micro-nano structures 10 on the hardened layer 40, it is easy to etch into the substrate layer 20, thereby reducing the wear resistance of the cover plate 100; if the thickness of the hardened layer 40 is too thin, when the hardened layer 40 is only provided on one side of the substrate layer 20, it is easy to cause stress concentration, so that the cover plate 100 is easy to curl to one side, and when the stress limit of the cover plate 100 is exceeded, it is easy to break.

[0103] For detailed description of other aspects of the base material layer 20 and the hardening layer 40 , please refer to the description of the corresponding parts of the above embodiments, which will not be repeated here.

[0104] See also Figure 7 In some embodiments, the cover plate 100 further includes a primer layer 30, which is disposed between the base layer 20 and the hardening layer 40 to improve the connection strength between the base layer 20 and the hardening layer 40, thereby improving the reliability of the cover plate 100. In other words, the primer layer 30 is used to improve the adhesion of the hardening layer 40 on the base layer 20.

[0105] For detailed description of other aspects of the base layer 30 , please refer to the description of the corresponding parts of the above embodiment, which will not be repeated here.

[0106] See also Figure 8 and Fig. 9 In some embodiments, the cover plate 100 of the present application further includes an anti-fingerprint layer 50 , which is disposed on a surface of the hardened layer away from the substrate layer 20 , and is used to improve the anti-fingerprint and anti-fouling effects of the cover plate 100 .

[0107] Optionally, the raw material components of the anti-fingerprint layer 50 may include but are not limited to one or more of perfluoropolyether, perfluoropolyether derivatives, etc. The anti-fingerprint layer 50 is formed by evaporating a layer of glue composed of the raw material components of the anti-fingerprint layer 50 on the surface of the hardened layer. Perfluoropolyether and perfluoropolyether derivatives have excellent anti-fingerprint performance and can play a good anti-fingerprint and anti-fouling role.

[0108] The cover plate 100 of the embodiment of the present application can be prepared by the method described in the following embodiments of the present application. In addition, it can also be prepared by other methods. The preparation method of the embodiment of the present application is only one or more preparation methods of the cover plate 100 of the present application and should not be understood as a limitation on the cover plate 100 provided by the embodiment of the present application.

[0109] See also Fig.10 , the embodiment of the present application provides a method for preparing a cover plate 100, which includes:

[0110] S201, providing a base layer and an imprinting mold, wherein a surface of the imprinting structure has a texture structure;

[0111] For a detailed description of the base layer, please refer to the description of the corresponding parts of the above and the embodiments, which will not be repeated here.

[0112] Optionally, the preparation method further comprises cleaning and drying the base layer.

[0113] Optionally, the surface of the imprinting mold has a texture structure. The imprinting mold can be prepared by self-assembly or gray scale lithography. Specifically, an optical simulation of the micro-nano structure 10 can be performed first, and the imprinting mold can be prepared according to the result of the optical simulation.

[0114] S202, forming a photoresist layer on the base layer;

[0115] Optionally, a photoresist liquid is dropped onto the base layer, and then the base layer is rotated at a high speed (for example, >1000 rpm). Under the combined effect of the centripetal force and the surface tension of the photoresist, the photoresist liquid is pulled into a uniform film layer. During the rotation of the base layer, the base layer is heated to evaporate the solvent in the photoresist liquid, thereby forming a photoresist layer of uniform thickness on the base layer.

[0116] Optionally, the thickness of the photoresist layer is 0.2 μm to 10 μm. Specifically, the thickness of the photoresist layer may be, but is not limited to, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 6 μm, 8 μm, 10 μm, etc. The thickness of the photoresist layer may be determined according to the texture structure of the imprint mold, and is not specifically limited in this application.

[0117] S203, stacking an imprinting mold on a surface of the photoresist layer away from the base layer, with the texture structure of the imprinting mold facing the photoresist layer, and removing the imprinting mold after curing;

[0118] Optionally, the imprint mold is pressed onto the photoresist layer and a certain pressure is applied so that the photoresist layer fills the texture structure of the imprint mold, and thermal curing or photocuring (such as irradiation with an LED lamp or a mercury lamp) is performed to cure the photoresist layer and form a structure complementary to the texture structure on the surface of the photoresist layer facing away from the base layer.

[0119] S204, dry etching the surface of the photoresist layer away from the base layer, so that the base layer forms a substrate layer 20, wherein the substrate layer 20 includes a plurality of protruding structures 21 located on the surface of the substrate layer 20;

[0120] Optionally, the dry etching is plasma etching.

[0121] Optionally, the substrate with the photoresist layer is placed in the dry etching chamber of the plasma etcher, and the power of the inductively coupled plasma (ICP) power supply is set to 700w to 2000w and the frequency is 13.56MHz to control the plasma density and composition. The bias voltage of the lower electrode of the plasma etcher uses a 2MHZ capacitively coupled plasma (CCP) with a power of 300w to 1500w to control the ion energy and direction. The etching gas (for example, BCl 3 , C 4 F 6 , O 2 The mixed gas is used as the etching gas with a volume ratio of 10:3:1) for dry etching, the temperature of the substrate layer 20 is controlled at 60°C to 130°C, the He pressure is 2T to 7T, and the pressure of the dry etching chamber is 1.0mT to 4.0mT to etch the photoresist layer and the substrate layer, so that the substrate layer 20 is formed after the substrate layer is etched, and the substrate layer 20 has a plurality of protruding structures 21 complementary to the texture structure of the imprint mold.

[0122] Optionally, the preparation method further includes CNC processing the substrate layer 20, removing the edge margin, making chamfers, etc., for example, milling into a 2D flat sheet with an outer dimension of 163.8*64.5mm. When it is necessary to prepare a cover plate 100 with a 3D structure, the 2D flat sheet is subjected to heat absorption molding to obtain a substrate layer 20 with a 3D structure having multiple protruding structures 21. Optionally, during heat absorption molding, a negative pressure is set on the surface of the substrate layer 20 away from the multiple protruding structures 21, and the surface of the substrate layer 20 with multiple protruding structures 21 is at normal pressure, so that the substrate layer 20 is subjected to heat absorption molding to obtain a substrate layer 20 with a 3D structure. Conventional hot bending is performed by hot pressing with a graphite (tungsten steel) mold. The glass with a microstructure on the surface will contact the mold surface. During high-temperature hot pressing, the surface will be pressed out of the mold, resulting in the destruction of the microstructure, resulting in a weakened effect, or even disappearance. If convex polishing is performed according to conventional processes, the anti-glare microstructure will also be thrown away. In this embodiment, heat absorption molding is adopted, and the surface of the substrate layer 20 with multiple protruding structures 21 will not leave mold marks, and there is no need for convex polishing (that is, the surface of the substrate layer 20 with multiple protruding structures 21 can be polished), which can prevent the multiple protruding structures 21 from being wiped off during polishing.

[0123] Optionally, the preparation method further comprises cleaning the substrate layer 20 of the 3D structure, and polishing and tempering the concave surface.

[0124] S205, forming a base layer 30 on the surface of the substrate layer 20 having the plurality of protruding structures 21; and

[0125] Optionally, the substrate layer 20 is placed in a coating device, cleaned first, and then vacuumed, and the surface of the substrate layer 20 (such as glass) is cleaned for 8 minutes to 12 minutes (such as 10 minutes) using plasma to improve the surface activity of the substrate layer 20. The base layer 30 (such as a silicon dioxide layer) is deposited by sputtering.

[0126] For detailed description of other aspects of the base layer 30 , please refer to the description of the corresponding parts of the above embodiment, which will not be repeated here.

[0127] S206, plating a hardening layer 40 on the surface of the base layer 30 away from the substrate layer 20 to obtain a cover plate 100 having a plurality of micro-nano structures 10 on the surface of the hardening layer 40 away from the substrate layer 20, wherein the range of the surface roughness Ra of the cover plate 100 having the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm.

[0128] Optionally, silicon nitride layers 41 and silicon dioxide layers are alternately plated on the surface of the base layer 30 away from the substrate layer 20 to form a hardened layer 40 , and a plurality of micro-nano structures 10 are formed on the surface of the hardened layer 40 away from the substrate layer 20 .

[0129] In some embodiments, an anti-fingerprint layer (AF layer) may be plated on the surface of the hardening layer 40 facing away from the substrate layer 20 to improve the anti-fouling and anti-fingerprint performance of the cover plate 100 .

[0130] See also Fig.11 , the embodiment of the present application provides a method for preparing a cover plate 100, which includes:

[0131] S201', providing a base layer and an imprinting mold, wherein the surface of the imprinting structure has a texture structure;

[0132] For a detailed description of the base layer, please refer to the description of the corresponding parts of the above and the embodiments, which will not be repeated here.

[0133] Optionally, the preparation method further comprises cleaning and drying the base layer.

[0134] Optionally, the surface of the imprinting mold has a texture structure. The imprinting mold can be prepared by self-assembly or gray scale lithography. Specifically, an optical simulation of the micro-nano structure 10 can be performed first, and the imprinting mold can be prepared according to the result of the optical simulation.

[0135] S202', forming a photoresist layer on the base layer;

[0136] Optionally, a photoresist liquid is dropped onto the base layer, and then the base layer is rotated at a high speed (for example, >1000 rpm). Under the combined effect of the centripetal force and the surface tension of the photoresist, the photoresist liquid is pulled into a uniform film layer. During the rotation of the base layer, the base layer is heated to evaporate the solvent in the photoresist liquid, thereby forming a photoresist layer of uniform thickness on the base layer.

[0137] Optionally, the thickness of the photoresist layer is 0.2 μm to 10 μm. Specifically, the thickness of the photoresist layer may be, but is not limited to, 0.2 μm, 0.5 μm, 1 μm, 2 μm, 3 μm, 4 μm, 6 μm, 8 μm, 10 μm, etc. The thickness of the photoresist layer may be determined according to the texture structure of the imprint mold, and is not specifically limited in this application.

[0138] S203', stacking an imprinting mold on the surface of the photoresist layer away from the base layer, with the texture structure of the imprinting mold facing the photoresist layer, and removing the imprinting mold after curing;

[0139] Optionally, the imprint mold is pressed onto the photoresist layer and a certain pressure is applied so that the photoresist layer fills the texture structure of the imprint mold, and thermal curing or photocuring (such as irradiation with an LED lamp or a mercury lamp) is performed to cure the photoresist layer and form a structure complementary to the texture structure on the surface of the photoresist layer facing away from the base layer.

[0140] S204', dry etching the surface of the photoresist layer away from the base layer, so that a plurality of micro-nano structures 10 are etched on the base layer to form a substrate layer 20; wherein the surface roughness Ra of the substrate layer 20 having the plurality of micro-nano structures 10 is in the range of 12nm≤Ra≤100nm.

[0141] Optionally, the dry etching is plasma etching.

[0142] Optionally, the substrate with the photoresist layer is placed in the dry etching chamber of the plasma etcher, and the power of the inductively coupled plasma (ICP) power supply is set to 700w to 2000w and the frequency is 13.56MHz to control the plasma density and composition. The bias voltage of the lower electrode of the plasma etcher uses a 2MHZ capacitively coupled plasma (CCP) with a power of 300w to 1500w to control the ion energy and direction. The etching gas (for example, BCl 3 , C 4 F 6 , O 2 The mixed gas is used as the etching gas with a volume ratio of 10:3:1) for dry etching, the temperature of the substrate layer 20 is controlled at 60°C to 130°C, the He pressure is 2T to 7T, and the pressure of the dry etching chamber is 1.0mT to 4.0mT to etch the photoresist layer and the substrate layer, so that the substrate layer 20 is formed after the substrate layer is etched, and the substrate layer 20 has a plurality of protruding structures 21 complementary to the texture structure of the imprint mold.

[0143] Optionally, the preparation method further includes CNC processing the substrate layer 20, removing the edge margin, making chamfers, etc., for example, milling into a 2D flat sheet with an outer dimension of 163.8*64.5mm. When it is necessary to prepare a cover plate 100 with a 3D structure, the 2D flat sheet is subjected to heat absorption molding to obtain a substrate layer 20 with a 3D structure having multiple protruding structures 21. Optionally, during heat absorption molding, a negative pressure is set on the surface of the substrate layer 20 away from the multiple protruding structures 21, and the surface of the substrate layer 20 with multiple protruding structures 21 is at normal pressure, so that the substrate layer 20 is subjected to heat absorption molding to obtain a substrate layer 20 with a 3D structure. Conventional hot bending is performed by hot pressing with a graphite (tungsten steel) mold. The glass with a microstructure on the surface will contact the mold surface. During high-temperature hot pressing, the surface will be pressed out of the mold, resulting in the destruction of the microstructure, resulting in a weakened effect, or even disappearance. If convex polishing is performed according to conventional processes, the anti-glare microstructure will also be thrown away. In this embodiment, heat absorption molding is adopted, and the surface of the substrate layer 20 with multiple protruding structures 21 will not leave mold marks, and there is no need for convex polishing (that is, the surface of the substrate layer 20 with multiple protruding structures 21 can be polished), which can prevent the multiple protruding structures 21 from being wiped off during polishing.

[0144] Optionally, the preparation method further comprises cleaning the substrate layer 20 of the 3D structure, and polishing and tempering the concave surface.

[0145] Optionally, silicon nitride layers 41 and silicon dioxide layers are alternately plated on the surface of the base layer 30 away from the substrate layer 20 to form a hardened layer 40 , and a plurality of micro-nano structures 10 are formed on the surface of the hardened layer 40 away from the substrate layer 20 .

[0146] In some embodiments, an anti-fingerprint layer (AF layer) may be plated on the surface of the substrate layer 20 having the micro-nano structure 10 to improve the anti-fouling and anti-fingerprint performance of the cover plate 100 .

[0147] See also Fig.12 The present application also provides a method for preparing a cover plate 100, which includes:

[0148] S301, providing a substrate layer 20 and an imprinting mold, wherein the surface of the imprinting structure has a texture structure;

[0149] For a detailed description of the substrate layer 20 , please refer to the description of the corresponding parts of the above and the embodiments, which will not be repeated here.

[0150] Optionally, the preparation method further comprises cleaning and drying the substrate layer 20 .

[0151] Optionally, the surface of the imprinting mold has a texture structure. The imprinting mold can be prepared by self-assembly or gray scale lithography. Specifically, an optical simulation of the micro-nano structure 10 can be performed first, and the imprinting mold can be prepared according to the result of the optical simulation.

[0152] S302, forming a primer layer 30 on the surface of the substrate layer 20;

[0153] Optionally, the substrate layer 20 is placed in a coating device, cleaned first, and then vacuumed, and the surface of the substrate layer 20 (such as glass) is cleaned for 8 minutes to 12 minutes (such as 10 minutes) using plasma to improve the surface activity of the substrate layer 20. The base layer 30 (such as a silicon dioxide layer) is deposited by sputtering.

[0154] For detailed description of other aspects of the base layer 30 , please refer to the description of the corresponding parts of the above embodiment, which will not be repeated here.

[0155] S303, coating a coating layer on the surface of the base layer 30 away from the substrate layer 20;

[0156] Optionally, silicon nitride layers 41 and silicon dioxide layers are alternately plated on the surface of the base layer 30 away from the substrate layer 20 to form a coating layer, thereby obtaining a stacked structure of substrate layer 20 / base layer 30 / coating layer.

[0157] Optionally, the thickness of the coating layer is 1 μm to 4 μm. Specifically, the thickness of the coating layer may be, but is not limited to, 1 μm, 1.2 μm, 1.4 μm, 1.6 μm, 1.8 μm, 2 μm, 2.2 μm, 2.4 μm, 2.6 μm, 2.8 μm, 3 μm, 3.2 μm, 3.4 μm, 3.6 μm, 3.8 μm, 4 μm, etc. If the thickness of the coating layer is too thin, when etching to form a plurality of micro-nano structures 10 on the coating layer, it is easy to etch to the substrate layer 20, reducing the wear resistance of the cover plate 100; if the thickness of the coating layer is too thin, when the coating layer is set on only one side of the substrate layer 20, it is easy to cause stress concentration, so that the cover plate 100 is easy to curl to one side, and when the stress limit of the cover plate 100 is exceeded, it is easy to break.

[0158] S304, forming a photoresist layer on the surface of the coating layer away from the base layer 30;

[0159] Optionally, a photoresist liquid is dropped onto the coating layer, and then the substrate layer 20 is rotated at a high speed (for example, >1000 rpm). Under the combined effect of the centripetal force and the surface tension of the photoresist, the photoresist liquid is pulled into a uniform film layer. During the rotation of the substrate layer 20, the substrate layer 20 is heated to evaporate the solvent in the photoresist liquid, thereby forming a photoresist layer of uniform thickness on the base layer 30, thereby obtaining a stacked arrangement of substrate layer 20 / base layer 30 / coating layer / photoresist layer.

[0160] Optionally, the thickness of the photoresist layer is 0.1 μm to 1 μm. Specifically, the thickness of the photoresist layer may be, but is not limited to, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1 μm, etc. The thickness of the photoresist layer may be determined according to the texture structure of the imprint mold, and is not specifically limited in this application.

[0161] S305, stacking an imprinting mold on the surface of the photoresist layer away from the coating layer, with the texture structure of the imprinting mold facing the photoresist layer, and removing the imprinting mold after curing; and

[0162] Optionally, the imprinting mold is pressed onto the photoresist layer and a certain pressure is applied so that the photoresist layer fills the texture structure of the imprinting mold, and thermal curing or light curing (such as irradiation with an LED lamp or a mercury lamp) is performed to cure the photoresist layer and form a structure complementary to the texture structure on the surface of the photoresist layer facing away from the coating layer.

[0163] S306, dry etching the surface of the photoresist layer away from the base layer to etch a plurality of micro-nano structures 10 on the surface of the coating layer to form a hardened layer 40, thereby obtaining a cover plate 100; wherein the range of the surface roughness Ra of the cover plate 100 having the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm.

[0164] Optionally, the dry etching is plasma etching.

[0165] Optionally, the substrate layer 20 / base layer 30 / coating layer / photoresist layer are arranged in a dry etching chamber of a plasma etcher, and the power of an inductively coupled plasma (ICP) power source is set to 700w to 2000w and the frequency is 13.56MHz to control the plasma density and composition. The bias voltage of the lower electrode of the plasma etcher uses a 2MHZ capacitively coupled plasma (CCP) with a power of 300w to 1500w to control the ion energy and direction. The etching gas (for example, BCl 3 and O 2 The mixed gas is used as the etching gas with a volume ratio of 120:10) for dry etching, the temperature of the substrate layer 20 is controlled at 60°C to 130°C, the He pressure is 2T to 6T, the pressure of the dry etching chamber is 1.0mT to 4.0mT, and the gas path temperature is 10°C, so as to etch the photoresist layer and the coating layer, so that a hardened layer 40 with multiple micro-nano structures 10 is formed after the coating layer is etched.

[0166] In some embodiments, after dry etching, cleaning is performed (for example, using an industrial standard wet cleaning process, referred to as RCA cleaning), and the preparation method also includes plating an anti-fingerprint layer (AF layer) on the surface of the hardened layer 40 away from the substrate layer 20 to improve the anti-fouling and anti-fingerprint performance of the cover plate 100.

[0167] In some embodiments, the preparation method further includes forming an ink shielding layer around the cover plate 100 .

[0168] Please see again Figure 1 and Figure 2 The embodiment of the present application further provides a cover plate 100, wherein the cover plate 100 includes a plurality of micro-nano structures 10 located on the surface of the cover plate 100, and the depth a of the micro-nano structures 10 is in the range of 50nm≤a≤180nm.

[0169] Specifically, the depth a of the micro-nano structure 10 may be, but is not limited to, 50 nm, 60 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, etc. If the depth a of the micro-nano structure 10 is too small, the super-hydrophobicity and ultra-low reflectivity (i.e., ultra-low reflectivity) of the cover plate 100 are reduced; if the depth a of the micro-nano structure 10 is too large, the haze of the cover plate 100 is easily increased and whitened, thereby affecting the optical performance of the cover plate 100, and when applied to a display screen, affecting the display effect of the display screen.

[0170] The cover plate 100 of this embodiment includes a plurality of micro-nano structures 10, and the depth a of the micro-nano structures 10 is in the range of 50nm≤a≤180nm. By designing the sizes of the plurality of micro-nano structures 10, the surface of the cover plate 100 having the plurality of micro-nano structures 10 not only has super-hydrophobic properties, but also has ultra-low reflectivity (i.e., ultra-low reflection effect) and high light transmittance.

[0171] Furthermore, the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤150nm. This allows the cover plate 100 to have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0172] Furthermore, the depth a of the micro-nano structure 10 is in the range of 70nm≤a≤100nm. In this way, the cover plate 100 can have better super-hydrophobicity and ultra-low reflectivity, lower haze, and better optical performance. When applied to a display screen, the display screen has a better display effect.

[0173] In some embodiments, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of: 0.02≤d / c<1. Specifically, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 can be, but is not limited to, 0.02, 0.05, 0.08, 0.1, 0.15, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, 0.5, 0.6, 0.7, 0.8, 0.9, 0.95, etc. If the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is too small, stress concentration is likely to occur at the top of the micro-nano structure 10, thereby reducing the wear resistance of the micro-nano structure 10; if the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is too large, the super-hydrophobic performance and ultra-low-reflective effect of the cover plate 100 are reduced, and the cover plate 100 may even have no super-hydrophobic performance or ultra-low-reflective effect.

[0174] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.02≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0175] Furthermore, the range of the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is: 0.05≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is within this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0176] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.08≤d / c≤0.5. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0177] Furthermore, the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in the range of 0.08≤d / c≤0.4. When the ratio of the top width d of the micro-nano structure 10 to the bottom width c of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 can have better wear resistance, better super-hydrophobic performance and ultra-low reflection effect.

[0178] In some embodiments, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤580nm. Specifically, the bottom width c of the micro-nano structure 10 may be, but is not limited to, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 580nm, etc. If the bottom width c of the micro-nano structure 10 is too small, the difficulty of preparing the mold for preparing the micro-nano structure 10 is increased, the preparation cost of the cover plate 100 is increased, and stress is easily concentrated at the micro-nano structure 10 of the cover plate 100, thereby reducing the wear resistance of the cover plate 100; if the bottom width c of the micro-nano structure 10 is too large, when the cover plate 100 is applied to a display screen, it affects the emission of light from the pixel points of the display screen, affects the mixing of RGB light emitted from the pixel points, and thus easily generates flash points, affecting the display effect of the display screen. In addition, if the bottom width c of the micro-nano structure 10 is too large, the haze of the cover plate 100 will be increased, thereby reducing the light transmittance of the cover plate 100.

[0179] Furthermore, the bottom width c of the micro-nano structure 10 is in the range of 200nm≤c≤500nm. When the bottom width of the micro-nano structure 10 is in this range, the cover plate 100 can have better wear resistance, and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0180] In some embodiments, the top width d of the micro-nano structure 10 is in the range of 10nm≤d≤500nm. Specifically, the top width d of the micro-nano structure 10 may be, but is not limited to, 0nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 150nm, 200nm, 300nm, 400nm, 500nm, etc. If the top width d of the micro-nano structure 10 is too small, stress concentration is easy to occur at the top of the micro-nano structure 10, thereby reducing the wear resistance of the micro-nano structure 10 of the cover plate 100; if the top width d of the micro-nano structure 10 is too large, the super-hydrophobic performance and ultra-low reflection effect of the cover plate 100 are reduced, and even the cover plate 100 has no super-hydrophobic performance or ultra-low reflection effect.

[0181] Furthermore, the top width d of the micro-nano structure 10 is in the range of 10 nm ≤ d ≤ 200 nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 has better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0182] Furthermore, the top width d of the micro-nano structure 10 is in the range of 10 nm ≤ d ≤ 100 nm. When the top width d of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having the micro-nano structure 10 has better wear resistance, better super-hydrophobicity and ultra-low reflection effect.

[0183] In some embodiments, the duty cycle f of the micro-nano structure 10 is in the range of 0.7≤f≤1, wherein the duty cycle f is the ratio of the bottom width c of the micro-nano structure 10 to the period b of the micro-nano structure 10. Specifically, the duty cycle f of the micro-nano structure 10 may be, but is not limited to, 0.7, 0.73, 0.75, 0.78, 0.8, 0.83, 0.85, 0.88, 0.9, 0.93, 0.95, 0.98, 1, etc. The higher the duty cycle f of the micro-nano structure 10, the better the ultra-low reflection effect and super-hydrophobic performance of the surface of the cover plate 100 having multiple micro-nano structures 10. When the duty cycle f of the micro-nano structure 10 is too small, the ultra-low reflection effect and super-hydrophobic performance of the surface of the cover plate 100 having multiple micro-nano structures 10 are reduced.

[0184] Furthermore, the duty cycle f of the micro-nano structure 10 is in the range of 0.8≤f≤1. When the duty cycle f of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having multiple micro-nano structures 10 has better ultra-low reflection effect and super-hydrophobic performance.

[0185] Furthermore, the duty cycle f of the micro-nano structure 10 is in the range of 0.9≤f≤1. When the duty cycle f of the micro-nano structure 10 is in this range, the surface of the cover plate 100 having multiple micro-nano structures 10 has better ultra-low reflection effect and super-hydrophobic performance.

[0186] In some embodiments, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤580nm. Specifically, the period b of the micro-nano structure 10 may be, but is not limited to, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 580nm, etc. If the period b of the micro-nano structure 10 is too small, the difficulty of preparing the mold for preparing the micro-nano structure 10 is increased, the preparation cost of the cover plate 100 is increased, and stress concentration is easy to occur at the micro-nano structure 10 of the cover plate 100, thereby reducing the wear resistance of the cover plate 100; if the period b of the micro-nano structure 10 is too large, when the cover plate 100 is applied to a display screen, the emission of light from the pixel points of the display screen is affected, and the mixing of RGB light emitted from the pixel points is affected, thereby easily generating flash points, thereby affecting the display effect of the display screen.

[0187] Furthermore, the period b of the micro-nano structure 10 is in the range of 200nm≤b≤500nm. When the period of the micro-nano structure 10 is in this range, the cover plate 100 has better wear resistance and is less likely to produce flash points when applied to a display screen, so that the display screen has a better display effect.

[0188] In some embodiments, the range of the roughness Ra of the surface of the cover plate 100 having the plurality of micro-nano structures 10 is: 12nm≤Ra≤100nm. Specifically, the roughness Ra of the surface of the cover plate 100 having the plurality of micro-nano structures 10 may be, but is not limited to, 12nm, 15nm, 18nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm, 100nm, etc. If the roughness Ra of the surface of the cover plate 100 with the multiple micro-nano structures 10 is too small, the super-hydrophobic performance and ultra-low reflective effect (i.e., ultra-low reflectivity) of the cover plate 100 are reduced; if the roughness Ra of the surface of the cover plate 100 with the multiple micro-nano structures 10 is too large, it is easy to increase the haze of the cover plate 100 and turn white, thereby affecting the optical performance of the cover plate 100, and when applied to a display screen, affecting the display effect of the display screen. When the roughness Ra of the surface of the cover plate 100 with the multiple micro-nano structures 10 is 12nm to 100nm, the surface of the cover plate 100 with the multiple micro-nano structures 10 not only has super-hydrophobic performance, but also has ultra-low reflectivity, and the cover plate 100 has a lower haze and is not easy to turn white. In addition, the cover plate 100 also has a higher light transmittance.

[0189] Please see again Figure 3 In some embodiments, the cover plate 100 includes a substrate layer 20 and a hardening layer 40. The substrate layer 20 includes a plurality of protruding structures 21 located on the surface of the substrate layer 20; the hardening layer 40 is stacked on the surface of the substrate layer 20 having the plurality of protruding structures 21, and the plurality of protruding structures 21 make the hardening layer 40 away from the surface of the substrate layer 20 to form the plurality of micro-nano structures 10. In this embodiment, by providing the hardening layer 40 on the substrate layer 20, the cover plate 100 can have super-hydrophobic properties and ultra-low reflection effects, and at the same time have high wear resistance, so that the cover plate 100 has good wear resistance.

[0190] For detailed description of other aspects of the cover plate 100, the base material layer 20, the hardening layer 40, etc. of this embodiment, please refer to the description of the corresponding parts of the above embodiments, which will not be repeated here.

[0191] Please see again Figure 4In some embodiments, the hardened layer 40 includes a multi-layer silicon nitride layer 41 and a multi-layer silicon nitride oxide layer 43, and the silicon nitride layer 41 and the silicon nitride oxide layer 43 are alternately stacked in sequence. In the present embodiment, the silicon nitride layer 41 and the silicon nitride oxide layer 43 both have a high hardness, so that the cover plate 100 can have a high wear resistance. In addition, when only the silicon nitride layer 41 is used as the hardened layer 40, the cover plate 100 will easily produce a hue, affecting the optical properties of the cover plate 100 such as the transmittance. In the present embodiment, by alternately stacking silicon nitride with a higher refractive index and silicon nitride oxide with a lower refractive index, the hardened layer 40 has a higher transmittance, so that when the cover plate 100 is applied to a display screen, it will not affect the display effect of the display screen.

[0192] For detailed description of other aspects of the silicon nitride layer 41 and the silicon nitride oxide layer 43 of this embodiment, please refer to the description of the corresponding parts of the above embodiments, which will not be repeated here.

[0193] Please see again Figure 5 In some embodiments, the cover plate 100 further includes a primer layer 30, which is disposed between the base layer 20 and the hardening layer 40 to improve the connection strength between the base layer 20 and the hardening layer 40, thereby improving the reliability of the cover plate 100. In other words, the primer layer 30 is used to improve the adhesion of the hardening layer 40 on the base layer 20.

[0194] For detailed description of other aspects of the base layer 30 , please refer to the description of the corresponding parts of the above embodiment, which will not be repeated here.

[0195] Please see again Figure 6 In other embodiments, the cover plate 100 includes a substrate layer 20 and a hardening layer 40. The hardening layer 40 is stacked on the surface of the substrate layer 20, and the hardening layer 40 includes a plurality of micro-nano structures 10 located on the surface of the hardening layer 40 away from the substrate layer 20. In this embodiment, by arranging the hardening layer 40 on the substrate layer 20, the cover plate 100 can have super-hydrophobic properties and ultra-low-reflection effects, and at the same time have high wear resistance, so that the cover plate 100 has good wear resistance.

[0196] For detailed description of other aspects of the cover plate 100, the base material layer 20, the hardening layer 40, etc. of this embodiment, please refer to the description of the corresponding parts of the above embodiments, which will not be repeated here.

[0197] Please see again Figure 7In some embodiments, the cover plate 100 further includes a primer layer 30, which is disposed between the base layer 20 and the hardening layer 40 to improve the connection strength between the base layer 20 and the hardening layer 40, thereby improving the reliability of the cover plate 100. In other words, the primer layer 30 is used to improve the adhesion of the hardening layer 40 on the base layer 20.

[0198] For detailed description of other aspects of the base layer 30 , please refer to the description of the corresponding parts of the above embodiment, which will not be repeated here.

[0199] Please see again Figure 8 and Fig. 9 In some embodiments, the cover plate 100 of the present application further includes an anti-fingerprint layer 50 , which is disposed on a surface of the hardened layer away from the substrate layer 20 , and is used to improve the anti-fingerprint and anti-fouling effects of the cover plate 100 .

[0200] Optionally, the raw material components of the anti-fingerprint layer 50 may include but are not limited to one or more of perfluoropolyether, perfluoropolyether derivatives, etc. The anti-fingerprint layer 50 is formed by evaporating a layer of glue composed of the raw material components of the anti-fingerprint layer 50 on the surface of the hardened layer. Perfluoropolyether and perfluoropolyether derivatives have excellent anti-fingerprint performance and can play a good anti-fingerprint and anti-fouling role.

[0201] For the preparation method of the cover plate 100 of this embodiment, please refer to the description of the corresponding part of the above embodiment, which will not be repeated here.

[0202] See also Fig.13 , the embodiment of the present application provides a method for preparing a cover plate 100, which includes:

[0203] S401, providing a base layer and an imprinting mold, wherein a surface of the imprinting structure has a texture structure;

[0204] S402, forming a photoresist layer on the base layer;

[0205] S403, stacking an imprinting mold on a surface of the photoresist layer away from the base layer, with the texture structure of the imprinting mold facing the photoresist layer, and removing the imprinting mold after curing;

[0206] S404, dry etching the surface of the photoresist layer away from the base layer, so that the base layer forms a substrate layer 20, wherein the substrate layer 20 includes a plurality of protruding structures 21 located on the surface of the substrate layer 20;

[0207] S405, forming a base layer 30 on the surface of the substrate layer 20 having the plurality of protrusion structures 21; and

[0208] S406, plating a hardening layer 40 on the surface of the base layer 30 away from the substrate layer 20 to obtain a cover plate 100 having a plurality of micro-nano structures 10 on the surface of the hardening layer 40 away from the substrate layer 20, wherein the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤180nm.

[0209] For the detailed description of S401 to S406, please refer to the description of the corresponding parts of S201 to S206 in the above embodiment, which will not be repeated here.

[0210] See also Fig.14 The present embodiment also provides a method for preparing a cover plate 100, which includes:

[0211] S501, providing a substrate layer 20 and an imprinting mold, wherein a surface of the imprinting structure has a texture structure;

[0212] S502, forming a primer layer 30 on the surface of the substrate layer 20;

[0213] S503, coating a coating layer on the surface of the base layer 30 away from the substrate layer 20;

[0214] S504, forming a photoresist layer on the surface of the coating layer away from the base layer 30;

[0215] S505, stacking an imprinting mold on a surface of the photoresist layer away from the coating layer, with the texture structure of the imprinting mold facing the photoresist layer, and removing the imprinting mold after curing; and

[0216] S506, dry etching the surface of the photoresist layer away from the base layer to etch a plurality of micro-nano structures 10 on the surface of the coating layer to form a hardening layer 40, thereby obtaining a cover plate 100; wherein the depth a of the micro-nano structure 10 is in the range of 50nm≤a≤180nm.

[0217] For the detailed description of S501 to S606, please refer to the description of the corresponding parts of S301 to S306 in the above embodiment, which will not be repeated here.

[0218] The cover plate 100 of the present application is further described below through specific embodiments.

[0219] Example 1 to Example 11

[0220] The cover plate 100 of each embodiment includes a glass layer (i.e., substrate layer 20), a silicon dioxide layer (i.e., a base layer 30), and a hardening layer 40 which are stacked in sequence. The substrate layer 20 includes a plurality of protruding structures 21 located on the surface of the substrate layer 20; the silicon dioxide layer and the hardening layer 40 are stacked in sequence on the surface of the substrate layer 20 having the plurality of protruding structures 21, and the plurality of protruding structures 21 make the hardening layer 40 away from the surface of the substrate layer 20 to form the plurality of micro-nano structures 10. The hardening layer 40 includes 5 silicon nitride layers 41 and 5 silicon oxynitride layers 43, and the silicon nitride layers 41 and the silicon oxynitride layers 43 are alternately stacked in sequence, and the thickness of each silicon nitride layer 41 is 40 nm, and the thickness of each silicon oxynitride layer 43 is 40 nm. Please refer to Table 1 below for the shape and size of the micro-nano structure 10.

[0221] Example 12

[0222] The cover plate 100 of this embodiment includes a glass layer, and the glass layer includes a plurality of micro-nano structures 10 on the surface of the glass layer. For the shapes and sizes of the micro-nano structures 10, please refer to Table 1 below.

[0223] Embodiment 13

[0224] The cover plate 100 of each embodiment includes a glass layer (i.e., a substrate layer 20) and an anti-fingerprint layer 50 which are stacked in sequence, the substrate layer 20 includes a plurality of micro-nano structures 10 located on the surface of the substrate layer 20, and the anti-fingerprint layer 50 is disposed on the surface of the substrate layer 20 having the plurality of micro-nano structures 10. For the shape and size of the micro-nano structure 10, please refer to Table 1 below.

[0225] Comparative Example 1

[0226] The cover plate 100 of this comparative example includes a glass layer.

[0227] Comparative Example 2

[0228] The cover plate 100 of this comparative example includes a glass layer and an anti-fingerprint layer 50 which are stacked.

[0229] The cover plate 100 of each embodiment and comparative example was tested for performance such as reflectivity, water drop angle, haze and wear resistance.

[0230] Wear resistance test: Use 0000# steel wool with a weight of 1 kg to rub back and forth on the surface of the cover plate 100 having multiple micro-nano structures 10, and measure the number of times the water drop angle is greater than or equal to 100° after back and forth friction.

[0231] Table 1 Performance parameters of the cover plate 100 of each embodiment and comparative example

[0232]

[0233] It can be seen from the test results of Examples 1 to 13 that the cover plate 100 of the embodiments of the present application has ultra-low reflectivity and ultra-high super-hydrophobicity. It can be seen from the test results of Examples 7, 12 and 13 that when the cover plate 100 of the present application includes the hardening layer 40, it has higher wear resistance than Example 13 in which the anti-fingerprint layer 50 is provided.

[0234] It can be seen from the test results of Example 12 and Comparative Example 1 in Table 1 that the cover plate 100 of the embodiment of the present application has an ultra-low reflectivity (the reflectivity of Example 12 is as low as 0.2%), ultra-high super-hydrophobicity (the water drop angle of Example 12 is as high as 151°), and almost no change in haze, so that when the cover plate 100 is applied to the display screen of an electronic device, the display screen has a better display effect.

[0235] It can be seen from the test results of Comparative Examples 1 and 2 that the anti-fingerprint layer 50 can improve the water drop angle of the cover plate 100, but the improvement of the water drop angle of the cover plate 100 is limited, and it cannot reduce the reflectivity of the cover plate 100. It can be seen from the test results of Examples 1 to 12 and Comparative Example 1 that the micro-nano structure 10 of the present application can not only greatly improve the water drop angle of the cover plate 100, but also greatly reduce the reflectivity of the cover plate 100.

[0236] See also Figures 15 to 17 The embodiment of the present application also provides an electronic device 400, which includes a display screen 410, a cover plate 100 of the above embodiment of the present application, and a processor 430. The display screen 410 has a display surface 411; the cover plate 100 is stacked on the display surface 411 of the display screen 410 to protect the display screen 410; the processor 430 is electrically connected to the display screen 410 to control the display screen 410 to display.

[0237] The electronic device 400 of the embodiment of the present application may be, but is not limited to, a portable electronic device 400 such as a mobile phone, a tablet computer, a laptop computer, a desktop computer, a smart bracelet, a smart watch, an e-reader, a game console, etc.

[0238] For a detailed description of the cover plate 100 , please refer to the description of the corresponding part of the above embodiment, which will not be repeated here.

[0239] Optionally, the display screen 410 may be, but is not limited to, one or more of a liquid crystal display screen, a light emitting diode display screen (LED display screen), a micro light emitting diode display screen (Micro LED display screen), a sub-millimeter light emitting diode display screen (Mini LED display screen), an organic light emitting diode display screen (OLED display screen), etc.

[0240] Optionally, the processor 430 includes one or more general-purpose processors, wherein the general-purpose processor can be any type of device capable of processing electronic instructions, including a central processing unit (CPU), a microprocessor, a microcontroller, a main processor, a controller, and an ASIC, etc. The processor 430 is used to execute various types of digital storage instructions, such as software or firmware programs stored in a memory, which enables the computing device to provide a wide variety of services.

[0241] Optionally, the electronic device 400 of the present application further includes a memory 450. The memory 450 is electrically connected to the processor 430 and is used to store program codes required for the processor 430 to run, program codes required for controlling the display screen 410, display content of the display screen 410, and the like.

[0242] Optionally, the memory 450 may include a volatile memory (Volatile Memory), such as a random access memory (Random Access Memory, RAM); the memory 450 may also include a non-volatile memory (NVM), such as a read-only memory (Read-Only Memory, ROM), a flash memory (Flash Memory, FM), a hard disk drive (Hard Disk Drive, HDD) or a solid-state drive (SSD). The memory 450 may also include a combination of the above-mentioned types of memory.

[0243] In some embodiments, the electronic device 400 of the embodiment of the present application further includes a middle frame 420, a camera module 470 and a housing 440, wherein the middle frame 420 is disposed between the display screen 410 and the housing 440, and the side of the middle frame 420 is exposed to the housing 440 and the display screen 410. The middle frame 420 and the housing 440 enclose a housing space (not shown), and the housing space is used to accommodate a processor 430, a memory 450 and the camera module 470. The camera module 470 is electrically connected to the processor 430 for shooting under the control of the processor 430. It can be understood that the display surface 411 is disposed away from the middle frame 420 and the housing 440.

[0244] Optionally, the housing 440 includes a light-transmitting portion 441, and the camera module 470 can shoot through the light-transmitting portion 441 on the housing 440, that is, the camera module 470 in this embodiment is a rear camera module 470. It can be understood that in other embodiments, the light-transmitting portion 441 can be set on the display screen 410, that is, the camera module 470 is a front camera module 470. In the schematic diagram of this embodiment, the light-transmitting portion 441 is illustrated as an opening. In other embodiments, the light-transmitting portion 441 may not be an opening, but a light-transmitting material, such as plastic, glass, etc. In some embodiments, the light-transmitting portion 441 is the cover plate 100 of the embodiment of the present application.

[0245] It can be understood that the electronic device 400 described in this embodiment is merely a form of electronic device 400 used by the cover 100, and should not be understood as a limitation on the electronic device 400 provided in this application, nor should it be understood as a limitation on the cover 100 provided in each embodiment of this application.

[0246] Mentioning "embodiment" and "implementation method" in this application means that the specific features, structures or characteristics described in conjunction with the embodiment may be included in at least one embodiment of the present application. The appearance of the phrases in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments. In addition, it should also be understood that the features, structures or characteristics described in the various embodiments of the present application can be arbitrarily combined to form another embodiment that does not deviate from the spirit and scope of the technical solution of the present application, if there is no contradiction between them.

[0247] Finally, it should be noted that the above implementation modes are only used to illustrate the technical solution of the present application and are not intended to limit it. Although the present application has been described in detail with reference to the above preferred implementation modes, a person of ordinary skill in the art should understand that the technical solution of the present application may be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present application.

Claims

1. A cover plate, characterized in that: The cover plate includes a plurality of micro-nano structures located on the surface of the cover plate, and the range of the roughness Ra of the surface of the cover plate having the plurality of micro-nano structures is: 12 nm≤Ra≤100 nm.

2. The cover plate according to claim 1, characterized in that: The depth a of the micro-nano structure is in the range of 50nm≤a≤400nm.

3. The cover plate according to claim 1, characterized in that: The depth a of the micro-nano structure is in the range of 70nm≤a≤100nm.

4. The cover plate according to claim 1, characterized in that: The range of the ratio of the top width d of the micro-nano structure to the bottom width c of the micro-nano structure is: 0.02≤d / c<1.

5. The cover plate according to claim 1, characterized in that: The range of the bottom width c of the micro-nano structure is: 200nm≤c≤5000nm.

6. The cover plate according to claim 1, characterized in that: The range of the bottom width c of the micro-nano structure is: 200nm≤c≤1000nm.

7. The cover plate according to claim 1, characterized in that: The range of the top width d of the micro-nano structure is: 0nm≤d≤5000nm.

8. The cover plate according to claim 1, characterized in that: The range of the top width d of the micro-nano structure is: 10nm≤d≤100nm.

9. The cover plate according to claim 1, characterized in that: The range of the duty cycle f of the micro-nano structure is: 0.7≤f≤1, wherein the duty cycle f is the ratio of the bottom width c of the micro-nano structure to the period b of the micro-nano structure.

10. The cover plate according to any one of claims 1 to 9, characterized in that: The range of the period b of the micro-nano structure is: 200nm≤b≤5000nm.

11. The cover plate according to any one of claims 1 to 9, characterized in that: The range of the period b of the micro-nano structure is: 200nm≤b≤1000nm.

12. The cover plate according to claim 1, characterized in that: The cover plate comprises: a substrate layer, the substrate layer comprising a plurality of protrusion structures located on a surface of the substrate layer; and The hardening layer is stacked on the surface of the substrate layer having the plurality of protruding structures, and the plurality of protruding structures enable the surface of the hardening layer to be away from the substrate layer to form the plurality of micro-nano structures.

13. The cover plate according to claim 1, characterized in that: The cover plate comprises: a substrate layer; and The hardening layer is stacked on the surface of the substrate layer, and the hardening layer includes a plurality of micro-nano structures located on the surface of the hardening layer away from the substrate layer.

14. The cover plate according to claim 12 or 13, characterized in that: The hardening layer includes multiple silicon nitride layers and multiple silicon oxynitride layers, and the silicon nitride layers and the silicon oxynitride layers are alternately stacked in sequence.

15. A cover plate, characterized in that: The cover plate includes a plurality of micro-nano structures located on the surface of the cover plate, and the depth a of the micro-nano structures is in the range of 50 nm≤a≤180 nm.

16. The cover plate according to claim 15, characterized in that: The depth a of the micro-nano structure is in the range of 70nm≤a≤100nm.

17. The cover plate according to claim 15, characterized in that: The range of the ratio of the top width d of the micro-nano structure to the bottom width c of the micro-nano structure is: 0.02≤d / c<1.

18. The cover plate according to claim 15, characterized in that: The range of the bottom width c of the micro-nano structure is: 200nm≤c≤580nm.

19. The cover plate according to claim 15, characterized in that: The range of the top width d of the micro-nano structure is: 10nm≤d≤500nm.

20. The cover plate according to claim 15, characterized in that The range of the duty cycle f of the micro-nano structure is: 0.7≤f≤1, wherein the duty cycle f is the ratio of the bottom width c of the micro-nano structure to the period b of the micro-nano structure.

21. The cover plate according to any one of claims 15 to 20, characterized in that: The range of the period b of the micro-nano structure is: 200nm≤b≤580nm.

22. The cover plate according to claim 15, characterized in that The cover plate comprises: a substrate layer, the substrate layer comprising a plurality of protrusion structures located on a surface of the substrate layer; and A hardening layer is stacked on the surface of the substrate layer having the plurality of protruding structures, and the plurality of protruding structures enable the surface of the hardening layer to be away from the substrate layer to form the plurality of micro-nano structures.

23. The cover plate according to claim 15, characterized in that The cover plate comprises: a substrate layer; and The hardening layer is stacked on the surface of the substrate layer, and the hardening layer includes a plurality of micro-nano structures located on the surface of the hardening layer away from the substrate layer.

24. The cover plate according to claim 22 or 23, characterized in that: The hardening layer includes multiple silicon nitride layers and multiple silicon oxynitride layers, and the silicon nitride layers and the silicon oxynitride layers are alternately stacked in sequence.

25. An electronic device, characterized in that: include: A display screen having a display surface; The cover plate according to any one of claims 1 to 24, wherein the cover plate is stacked on the display surface of the display screen to protect the display screen; as well as A processor is electrically connected to the display screen and is used to control the display screen to display.

Images