Method for constructing temperature control model of wafer bearing device and electronic equipment

Abstract

The invention discloses a method for constructing a temperature control model of a wafer bearing device, electronic equipment and semiconductor process equipment, and the method comprises the steps: a main area heater adjustment step: controlling a main area heater to heat a main area where the main area heater is located to a preset temperature, and when the temperature of the main area is stabilized to the preset temperature, controlling the main area heater to heat the main area to the preset temperature; controlling the power of the main area heater to be unchanged; a community heater adjusting step: adjusting the power of one of the plurality of community heaters for multiple times, keeping the power of the other community heaters at zero, and recording the power of each community heater and the temperatures of all the communities when the temperatures of the main community and the plurality of communities are stable each time; after one of the plurality of cell heaters is adjusted for multiple times, the other one of the plurality of cell heaters is selected to repeatedly execute the cell heater adjusting step until all the cell heaters are adjusted; and a temperature power relation obtaining step of obtaining the relation between the target temperatures of the plurality of cells and the target powers of the plurality of cell heaters.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a method for constructing a temperature control model of a wafer carrier and electronic equipment. Background Art

[0002] In the related art, semiconductor process equipment includes a support seat (such as an electrostatic chuck), and the support seat is used to support the wafer to perform semiconductor processing. In the process of performing semiconductor processing, the influence of temperature on the process is relatively important. In order to ensure that the temperature of each area of ​​the wafer is uniform as much as possible, a plurality of local heaters are arranged in the same area of ​​the support seat involved in the related art, and the plurality of local heaters are used to locally adjust the temperature so that the temperature in the same area is as uniform as possible. However, in the actual temperature adjustment process, although the plurality of local heaters can achieve local temperature adjustment, it is still impossible to achieve further uniformity of temperature in the same area. Summary of the invention

[0003] The invention discloses a method for constructing a temperature control model of a wafer carrier and an electronic device, so as to solve the problem that semiconductor process equipment involved in the related art cannot well realize uniform temperature regulation of the wafer.

[0004] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0005] In a first aspect, an embodiment of the present invention discloses a method for constructing a temperature control model of a wafer carrier, wherein the wafer carrier comprises a carrier, a main zone heater and a plurality of small zone heaters, wherein the carrier comprises a main zone, wherein the main zone comprises a plurality of small zones, wherein the main zone heater is used to heat the main zone, and wherein the small zone heater is used to heat the small zone, wherein the method comprises:

[0006] A main zone heater adjustment step, for controlling the main zone heater to heat the main zone to a preset temperature, and when the temperature of the main zone is stabilized to the preset temperature, controlling the power of the main zone heater to remain unchanged;

[0007] A cell heater adjustment step, for adjusting the power of one of the plurality of cell heaters for multiple times, and keeping the power of the other cell heaters at zero, and recording the power of each cell heater and the temperature of all the cells each time when the temperature of the main zone and the plurality of cells is stable; and after the multiple adjustments of one of the plurality of cell heaters are completed, selecting another of the plurality of cell heaters to repeat the cell heater adjustment step until all the cell heaters are adjusted;

[0008] The temperature-power relationship acquisition step is to acquire the relationship between the target temperatures of the plurality of cells and the target powers of the plurality of cell heaters based on the recorded power of each of the cell heaters and the temperatures of all the cells.

[0009] In a second aspect, an embodiment of the present invention discloses an electronic device, which includes at least one memory and at least one processor, wherein the memory stores a computer program, and the processor is used to execute the method described in the first aspect above according to the computer program.

[0010] In a third aspect, an embodiment of the present invention discloses a semiconductor process equipment, the disclosed semiconductor process equipment includes a wafer carrier, a memory and a controller, the wafer carrier includes a carrier, a main zone heater and a plurality of small zone heaters, the carrier includes a main zone, the main zone includes a plurality of small zones, the main zone heater is used to heat the main zone, and the small zone heater is used to heat the small zone;

[0011] The memory is used to store the temperature control model constructed by the method described in the first aspect above;

[0012] The controller is used to calculate the target powers of the plurality of cell heaters according to the temperature control model, and control the plurality of cell heaters to perform heating according to the respective target powers.

[0013] The technical solution adopted by the present invention can achieve the following technical effects:

[0014] The method for constructing a temperature control model of a wafer carrier disclosed in an embodiment of the present invention fully recognizes that the power adjustment of a cell heater will not only affect the temperature of the corresponding cell, but also affect the temperature of other cells. Therefore, it reversely considers that the temperature adjustment of each cell can achieve the purpose of local temperature adjustment through the coordinated cooperation of all cell heaters. Finally, based on this concept, the relationship between the target temperatures of multiple cells and the target powers of all cell heaters is finally obtained through the main zone heater adjustment step, the cell heater adjustment step and the temperature-power relationship acquisition step, so that the temperature control model of the wafer carrier can be constructed. Finally, when performing the process, the target power of each cell heater can be obtained and controlled by using this temperature control model (i.e., the temperature-power relationship) and the target temperature of each cell heater, which is more conducive to more refined power matching adjustment of the temperature of the wafer carrier and achieves the purpose of more uniform temperature adjustment.

[0015] It can be seen that the method for constructing a temperature control model for a wafer carrier disclosed in an embodiment of the present invention can avoid the drawback of inaccurate temperature regulation caused by only considering the temperature influence of the cell heater on the corresponding cell and ignoring the temperature influence on other cells, thereby improving the accuracy of temperature regulation of each cell. Only by more accurate temperature regulation of each cell can the temperature uniformity of the carrier be better regulated, and ultimately the temperature uniformity of the wafer on the carrier can be better regulated. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic structural diagram of a wafer carrying device involved in an embodiment of the present invention;

[0017] Figure 2 is a distribution diagram exemplarily illustrating a plurality of main areas and a plurality of small areas on a bearing seat;

[0018] Figure 3 It is a flow chart of a method for constructing a temperature control model of a wafer carrier device disclosed in an embodiment of the present invention;

[0019] Figure 4 It is a schematic diagram of a process for obtaining a temperature-power relationship disclosed in an embodiment of the present invention;

[0020] Figure 5 It is a flow chart of another method for constructing a temperature control model of a wafer carrier device disclosed in an embodiment of the present invention;

[0021] Figure 6 is a flow chart of the main zone temperature stability judgment sub-steps disclosed in an embodiment of the present invention;

[0022] Figure 7 It is a flow chart of the cell temperature stability judgment sub-steps disclosed in an embodiment of the present invention;

[0023] Figure 8 is a schematic diagram of the structure of an electronic device disclosed in an embodiment of the present invention;

[0024] Fig. 9 is a schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present invention, Fig. 9 The dashed lines in the figure represent control connections.

[0025] Description of reference numerals:

[0026] 10-bearing seat, 101-cooling base, 102-main heating layer, 103-insulating layer, 11-main area, 12-small area, 13-bearing surface,

[0027] 20- Main zone heater,

[0028] 30-Cell heater,

[0029] 001-Memory, 002-Processor,

[0030] 01-wafer carrier, 02-memory, 03-controller, 04-chamber. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the specific embodiments of the present invention and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0032] The technical solutions disclosed in various embodiments of the present invention are described in detail below in conjunction with the accompanying drawings.

[0033] Please refer to Figure 1 and Figure 2 The related art discloses a wafer carrier 01. The disclosed wafer carrier 01 is used to carry wafers when performing semiconductor processes. The disclosed wafer carrier 01 includes a carrier seat 10, a main zone heater 20 and a plurality of small zone heaters 30.

[0034] The carrier 10 is the carrier body of the wafer carrier. The carrier 10 includes a main area 11, and the main area 11 includes a plurality of small areas 12. The main area 11 can be one or more. Figure 2 Taking the structure shown as an example, there may be four main areas 11, and the four main areas 11 may be concentrically distributed. The main area 11 located at the center of the support base 10 is a circular area, and the other main areas 11 are multiple annular areas surrounding the main area 11 located at the center in sequence. Regardless of whether the number of main areas 11 is one or more (i.e., at least two), any main area 11 includes multiple small areas 12, and each small area 12 is a local area of ​​the main area 11.

[0035] In the case where there are multiple master zones 11, the number of cells 12 included in each master zone 11 may be equal or unequal. Figure 2 As shown in the example, Figure 2 The four main areas 11 shown include five cells (cells Z1 to Z5, respectively) 12, six cells (cells Z6 to Z11, respectively) 12, eight cells (cells Z12 to Z19, respectively) 12 and eighteen cells (cells Z20 to Z37, respectively) 12. The multiple cells 12 included in each main area 11 are spaced as evenly as possible to cover all areas of the main area 11 as much as possible.

[0036] The main zone heater 20 and the small zone heater 30 are both heating devices, which are used to heat the support seat 10. Among them, the main zone heater 20 is used to heat the main zone 11 where it is located. As the main heating device of the main zone 11, it can adjust the temperature of the main zone 11 to a large extent. The small zone heater 30 is used to heat the small zone 12 where it is located, so as to achieve temperature adjustment of the local area of ​​the main zone 11. The temperature of multiple small zones 12 in the same main zone 11 is fine-tuned by the small zone heaters 30 configured respectively, so that the temperature of each local area of ​​the same main zone 11 is as uniform as possible. Of course, the small zone heaters 30 configured for multiple small zones 12 in each main zone 11 can also make the temperature between all the main zones 11 as uniform as possible through fine-tuning.

[0037] The inventor of the present invention found that when implementing the technical solution of the present invention, the wafer carrier 01 involved in the related art is limited to adjusting the power of the corresponding cell heater 30 when performing local temperature adjustment. However, once the power of a cell heater 30 is adjusted, it will not only affect the temperature of the cell 12 where it is located, but also affect the temperature of other cells 12, thereby breaking the temperature balance of other cells 12, making it impossible for the temperature between the cells 12 to achieve a good uniformity.

[0038] In order to solve the above problem, so that the temperature uniformity between the cells 12 can be better achieved during the temperature fine-tuning of the cells 12, the present application embodiment discloses a method for constructing a temperature control model of a wafer carrier device, please refer to Figure 3 The disclosed method is based on the wafer carrier device 01 described above, and the disclosed method may include:

[0039] S101, main zone heater adjustment step.

[0040] The main zone heater adjustment step is used to control the main zone heater 20 to heat the main zone 11 to a preset temperature, and when the temperature of the main zone 11 stabilizes to the preset temperature, control the power of the main zone heater 20 to remain unchanged. In the case of multiple main zones 11, the preset temperatures of the main zones 11 can be equal.

[0041] This step can use a temperature control mode (i.e., PID) through temperature feedback to control the main zone heater 20 for heating. In other words, whether the temperature of the main zone 11 fed back reaches the preset temperature is used to determine whether to increase the power of the main zone heater 20. Once the temperature of the main zone 11 stabilizes to the preset temperature, the power of the main zone heater 20 is controlled to remain unchanged. In this case, the control mode of the main zone heater 20 is changed from the temperature control mode to the power control mode, that is, the power of the main zone heater 20 is kept unchanged, thereby avoiding the situation in which the power of the main zone heater 20 is adjusted again due to the temperature change of the main zone 11 in the subsequent steps. It should be noted that the temperature change of the main zone 11 in the subsequent steps is caused by the adjustment of the power of the small zone heater 30.

[0042] The preset temperature may be 40° C. Of course, the preset temperature may also be other values. The embodiment of the present application does not limit the specific value of the preset temperature.

[0043] S102, cell heater adjustment steps.

[0044] The cell heater adjustment step is used to adjust the power of one of the multiple cell heaters 30 multiple times, and keep the power of other cell heaters 30 at zero, and each time when the temperature of the main zone 11 and the multiple cells 12 is stable, record the power of the cell heater (i.e., the cell heater currently being adjusted) 30 and the temperature of all the cells 12, and after multiple (i.e., the first preset number of times described below) adjustments of one of the multiple cell heaters 30 are completed, select another one of the multiple cell heaters 30 to repeat the cell heater adjustment step until all the cell heaters 30 are adjusted.

[0045] In this step, the number of times each cell heater 30 is adjusted can be preset, that is, the first preset number of times. Of course, in the process of multiple adjustments of each cell heater 30, the power change amplitude of each cell heater 30 can be equal or unequal, and the embodiment of the present application does not limit this. The power change amplitudes of different cell heaters 30 when adjusted can be equal or unequal, and the embodiment of the present invention does not limit this.

[0046] The essence of this step is to adjust the powers of the multiple cell heaters 30 one by one in such a way that the power of one of the multiple cell heaters 30 is adjusted a first preset number of times while the powers of the remaining cell heaters 30 remain zero, until the powers of all the cell heaters 30 are adjusted the first preset number of times, and after the powers of all the cell heaters 30 are adjusted once individually, the temperatures of all the cells 12 are counted when the temperatures of the main zone 11 and the multiple cells 12 are stable, thereby obtaining a corresponding data set between the power of the cell heater 30 and the temperature of all the cells 12, thereby preparing for the temperature-power relationship acquisition step described later.

[0047] S103: temperature-power relationship acquisition step.

[0048] As described above, the inventors of the present invention found in the process of implementing the technical solution of the present invention that the adjustment of the power of each cell heater 30 will have a temperature impact on all cells 12. It is also noted that the temperature of each cell 12 is not simply affected by the power of a corresponding cell heater 30, but is affected by the power of other cell heaters 30.

[0049] Based on this, the temperature-power relationship acquisition step is used to acquire the relationship between the target temperature of multiple cells 12 and the target power of multiple cell heaters 30, that is, the temperature-power relationship, based on the recorded power of each cell heater 30 and the temperature of all cells 12. The acquisition of this relationship indicates that the temperature control model of the wafer carrier 01 has been completed, and then according to this temperature control model, the target power of each cell heater 30 can be obtained according to the respective target temperatures of the multiple cells 12 during the temperature control process of the wafer carrier, so that the power of each cell heater 30 can be controlled to be adjusted to the respective target power according to the target power of each cell heater 30.

[0050] The method for constructing a temperature control model of a wafer carrier device disclosed in an embodiment of the present invention fully recognizes that the power adjustment of the cell heater 30 will not only affect the temperature of the corresponding cell 12, but also affect the temperature of other cells 12. Therefore, it is considered in reverse that the temperature adjustment of each cell 12 can achieve the purpose of local temperature adjustment through the coordinated cooperation of all cell heaters 30. Finally, based on this concept, the main zone heater adjustment step, the cell heater adjustment step and the temperature-power relationship acquisition step are used to finally obtain the relationship between the target temperatures of multiple cells 12 and the target powers of all cell heaters 30, so that the temperature control model of the wafer carrier device 01 can be constructed. Finally, when performing the process, the temperature control model (i.e., the temperature-power relationship) can be used, as well as the target temperature of each cell heater 30. The target power of each cell heater 30 can be obtained and controlled, which is more conducive to more refined power matching adjustment of the temperature of the wafer carrier device and achieves the purpose of more uniform temperature adjustment.

[0051] It can be seen that the method for constructing a temperature control model of a wafer carrier device disclosed in an embodiment of the present invention can avoid the disadvantage of inaccurate temperature adjustment caused by only considering the influence of the cell heater 30 on the temperature of the corresponding cell 12 and ignoring the influence on the temperature of other cells 12, thereby improving the accuracy of temperature adjustment of each cell 12. Only by more accurate temperature adjustment of each cell 12 can the temperature uniformity of the carrier 10 be better adjusted, and finally the temperature uniformity of the wafer on the carrier 10 can be better adjusted.

[0052] In the embodiment of the present invention, the power increase of each cell heater 30 will increase the temperature of multiple cells 12, so the power of the cell heater 30 is positively correlated with the temperature of each cell 12. Then, a function model that can characterize the positive correlation can be established, and with the help of each corresponding data set recorded in the cell heater adjustment step, the coefficients and constants of the function model can be determined by fitting, and finally the temperature-power relationship can be determined. Considering that the function model can be designed in a variety of ways, the embodiment of the present invention does not limit the specific method of determining the temperature-power relationship in the temperature-power relationship acquisition step.

[0053] Considering the convenience of fitting, it can be considered that the power P of the cell heater 30 and the temperature T of all the cells 12 have a linear relationship represented by the formula T = K × P + b. Where T represents the target temperature of each cell 12, P represents the target power required by each cell heater 30 to achieve the target temperature of the multiple cells 12, K and b are coefficient matrix and constant matrix respectively. Based on this, the following is Figure 2 The structure shown is taken as an example to illustrate the method for constructing a temperature control model of the wafer carrier 01 disclosed in an embodiment of the present invention.

[0054] Figure 2 There are four main areas 11 in the diagram. The main area 11 at the center is a circular area. The other main areas 11 are respectively annular areas surrounding the main area 11 at the center. For the convenience of description, the main area 11 at the center is defined as the first main area, and the other three main areas 11 from the first main area to the outside are defined as the second main area, the third main area and the fourth main area.

[0055] The first main zone includes cell Z1, cell Z2, cell Z3, cell Z4 and cell Z5.

[0056] The second main zone includes cell Z6, cell Z7, cell Z8, cell Z9, cell Z10 and cell Z11.

[0057] The third main area includes a cell Z12, a cell Z13, a cell Z14, a cell Z15, a cell Z16, a cell Z17, a cell Z18 and a cell Z19.

[0058] The fourth main area includes cell Z20, cell Z21, cell Z22, cell Z23, cell Z24, cell Z25, cell Z26, cell Z27, cell Z28, cell Z29, cell Z30, cell Z31, cell Z32, cell Z33, cell Z34, cell Z35, cell Z36 and cell Z37.

[0059] There are various diameter distribution ranges of the main zone heaters 20 in the first main zone, the second main zone, the third main zone and the fourth main zone. The embodiment of the present application does not limit the diameter distribution range of the small zone heaters 30 in the first main zone, the second main zone, the third main zone and the fourth main zone.

[0060] In the main zone heater adjustment step, the preset temperature can be pre-set to 40°C to 60°C, and then the power of the main zone heater 20 of the first main zone, the main zone heater 20 of the second main zone, the main zone heater 20 of the third main zone and the main zone heater 20 of the fourth main zone are controlled respectively, so that the temperatures of the first main zone, the second main zone, the third main zone and the fourth main zone reach the preset temperature.

[0061] Then determine whether the first main zone, the second main zone, the third main zone and the fourth main zone are stable at the preset temperature. When the temperature of the first main zone, the second main zone, the third main zone and the fourth main zone is stable at the preset temperature, the main zone heater 20 is changed from the temperature control mode to the power control mode, so that the power of the main zone heater 20 of the first main zone, the main zone heater 20 of the second main zone, the main zone heater 20 of the third main zone and the main zone heater 20 of the fourth main zone remains unchanged. As described above, the temperature control mode means that the temperature change of the main zone 11 will produce feedback, which will then trigger the passive adjustment of the power of the main zone heater 20. The purpose of this is to avoid the influence of the temperature change of the main zone 11 caused by the power adjustment of the small zone heater 30 in the subsequent small zone heater adjustment step on the power of the main zone heater 20.

[0062] Next, the cell heater adjustment step is performed, and the power variation range of each cell heater 30 can be pre-designed. For example, the power variation range of each cell heater 30 is 10% of the full load power, and the power of each cell heater 30 can be preset to be adjusted from zero. In this case, the first preset number of times is 10 times. During the adjustment process, the corresponding cell heaters 30 are adjusted one by one from cell Z1 to cell Z37 in a manner such that the power of one of the multiple cell heaters 30 is adjusted 10 times while the power of the remaining cell heaters 30 remains zero, until the power of the cell heaters 30 corresponding to all cells 12 is adjusted 10 times. And after the power of all cell heaters 30 is adjusted once individually, the temperature of all cells 12 is counted when the temperature of the main zone 11 and multiple cells 12 is stable, so as to obtain a corresponding data set between the power of the cell heater 30 and the temperature of all cells 12, as shown in Table 1.

[0063] Table 1

[0064]

[0065]

[0066] It should be noted that in Table 1, the power of cell Z1 refers to the power of the cell heater 30 corresponding to cell Z1; the power of cell Z2 refers to the power of the cell heater 30 corresponding to cell Z2, and so on, the power of cell Z37 refers to the power of the cell heater 30 corresponding to cell Z37. In the first column of Table 1, 10% means that the power of the cell heater 30 corresponding to cell Z1 is 10% of its full load power, and 20% means that the power of the cell heater 30 corresponding to cell Z1 is 20% of its full load power. 100% means that the power of the cell heater 30 corresponding to cell Z1 is 100% of its full load power. The meanings represented by other numerical values ​​in the first column of Table 1 can be deduced by analogy. The meanings represented by the numerical values ​​(i.e., percentage values) in other columns in Table 1 represent the percentage of the power of the cell heaters 30 corresponding to other cells to their full load power.

[0067] T 1-1-1 It refers to the temperature of the cell Z1 after the power of the corresponding cell heater 30 is adjusted once from zero; and so on, T 37-1-1 It refers to the temperature of cell Z37 after the power of the cell heater 30 corresponding to cell Z1 is adjusted once from zero.

[0068] T 1-1-10 It refers to the temperature of the cell Z1 after the power of the corresponding cell heater 30 is adjusted 10 times from zero (the power change range is 10% of the full load power of the cell heater 30), and so on. 37-1-10 It refers to the temperature of cell Z37 after the power of the cell heater 30 corresponding to cell Z1 is adjusted 10 times.

[0069] T 1-37-1 It refers to the temperature of the cell Z1 after the power of the cell heater 30 corresponding to the cell Z37 is adjusted once from zero, T 37-37-1 Refers to the temperature of cell Z37 after the power of the corresponding cell heater 30 is adjusted once from zero. 1-37-2 It refers to the temperature of the cell Z1 after the power of the cell heater 30 corresponding to the cell Z37 is adjusted twice from zero, T 37-37-2 It refers to the temperature of cell Z37 after the power of the corresponding cell heater 30 is adjusted twice from zero. 1-37-10 The temperature of the cell Z1 in the cell Z37 corresponding to the cell heater 30 after the power is adjusted 10 times from zero, T 37-37-10 It refers to the temperature of cell Z37 after the power of the cell heater 30 corresponding thereto is adjusted 10 times from zero.

[0070] Finally, the cell heater adjustment step is performed. In the method disclosed in the embodiment of the present invention, please refer to Figure 4 The temperature-power relationship acquisition step may include a coefficient constant calculation sub-step and a relationship construction sub-step.

[0071] S201, coefficient constant calculation sub-step.

[0072] The coefficient constant calculation sub-step is used to calculate the coefficient matrix formed by the slopes of all linear relationships and the constant matrix formed by the linear relationships based on the linear relationship between the power of each cell heater 30 and the temperature of all cells 12 recorded in the cell heater adjustment step.

[0073] The specific process is as follows:

[0074] As mentioned above, there is a linear relationship between the power of the cell heater 30 and the temperature of all cells 12. Based on this, the following operations are performed:

[0075] Operation 1: When the power of the cell heater 30 corresponding to cell Z1 is adjusted once and the power of the other cell heaters 30 is zero, according to the linear formula T 1～n =K 1～n ×P1+b 1～n , we can get the relationship between the temperature of 37 cells 12 and the power of the cell heater 30 corresponding to cell Z1, P1 is the power of the cell heater 30 corresponding to cell Z1 after a certain adjustment. 1≤n≤37, 1 in 1~n means that the cell heater 30 corresponding to cell Z1 is in the power adjustment state, T 1～n It refers to the influence of the power P1 of the cell heater 30 corresponding to the cell Z1 on the temperature of the nth cell 12 .

[0076] According to the formula T 1～n =K 1～n ×P1+b 1～n The 37 relationships derived from the formula are as follows:

[0077] T 1-1 =k 1-1 ×P1+b 1～1 ,

[0078] T 1-2 =k 1-2 ×P1+b 1～2 ,

[0079] T 1-3 =k 1-3 ×P1+b 1～3 ,

[0080] …

[0081] T 1-37 =k 1-37 ×P1+b 1～37 .

[0082] When P1 is 10% of the full load power of the cell heater 30 corresponding to the cell Z1, T 1-1 Take the T recorded in Table 1 1-1-1 , T 1-37 Take the T recorded in Table 1 37-1-1 When P1 is 20% of the full load power of the cell heater 30 corresponding to cell Z1, T 1-1 Take the value of T in Table 1 1-1-2 , T 1-37 Take the T recorded in Table 1 37-1-2 When P1 is 100% of the full load power of the cell heater 30 corresponding to cell Z1, T 1-1 Take the T recorded in Table 1 1-1-10 , T 1-37 Take the value of T in Table 1 37-1-10 .

[0083] K is fitted by fitting 1-1 , K 1-2 , K 1-3 , ... K 1-37 The values ​​of these coefficients, as well as b 1-1 , b 1-2 , b 1-3 , ...b 1-37 The values ​​of these constants.

[0084] Operation 2: When the power of the cell heater 30 corresponding to cell Z2 is adjusted once and the power of the other cell heaters 30 is zero, according to the linear formula T 2～n =K 2～n ×P2+b 2～n , we can get the relationship between the temperature of 37 cells 12 and the power of the cell heater 30 corresponding to cell Z2, P2 is the power of the cell heater 30 corresponding to cell Z2 after a certain adjustment. 1≤n≤37, 2 in 2~n means that the cell heater 30 corresponding to cell Z2 is in the power adjustment state, T 2～n It refers to the influence of the power P2 of the cell heater 30 corresponding to the cell Z2 on the temperature of the nth cell 12 .

[0085] According to the formula T 2～n =K 2～n ×P2+b 2～n The 37 relationships derived from the formula are as follows:

[0086] T 2-1 =k 2-1 ×P2+b 2～1 ,

[0087] T2-2 =k 2-2 ×P2+b 2～2 ,

[0088] T 2-3 =k 2-3 ×P2+b 2～3 ,

[0089] …

[0090] T 2-37 =k 2-37 ×P2+b 2～37 .

[0091] Similar to the value selection rule in operation 1, when P2 is different, the corresponding query can be obtained from Table 1 to achieve T 2-1 , T 2-2 , T 2-3 ,……T 2-37 The value of K is finally fitted by fitting 2-1 , K 2-2 , K 2-3 , ... K 2-37 The values ​​of these coefficients, as well as b 2-1 、b 2-2 、b 2-3 , ...b 2-37 The values ​​of these constants.

[0092] Operation 3, and so on, when the power of the other cells 12 is adjusted once for the corresponding cell heaters 30 and the power of the other cell heaters 30 is zero, the relationship between the temperature of the 37 cells 12 and the power of the cell heaters 30 also has a corresponding relationship.

[0093] For example, when the power of the cell heater 30 corresponding to cell Z37 is adjusted once and the power of the other cell heaters 30 is zero, according to the linear formula T 37～n =K 37～n ×P 37 +b 37～n , we can get the relationship between the temperature of 37 cells 12 and the power of the cell heater 30 corresponding to cell Z37, P 37 is the power of the cell heater 30 corresponding to cell Z37 after a certain adjustment. 1≤n≤37, 2 in 37~n indicates that the cell heater 30 corresponding to cell Z37 is in the power adjustment state, T 37～n Refers to the power P of the cell heater 30 corresponding to cell Z37 37 Impact on the temperature of the nth cell 12.

[0094] According to the formula T 2～n =K 2～n ×P2+b2～n The 37 relationships derived from the formula are as follows:

[0095] T 37-1 =k 37-1 ×P 37 +b 37～1 ,

[0096] T 37-2 =k 37-2 ×P 37 +b 37～2 ,

[0097] T 37-3 =k 37-3 ×P 37 +b 37～3 ,

[0098] …

[0099] T 37-37 =k 37-37 ×P 37 +b 37～37 .

[0100] In P 37 When the full load power of the cell heater 30 corresponding to cell Z37 is 10%, T 37-1 Take the T recorded in Table 1 1-37-1 , T 37-37 Take the T recorded in Table 1 37-37-1 In P 37 When the full load power of the cell heater 30 corresponding to cell Z37 is 20%, T 37-1 Take the value of T in Table 1 1-37-2 , T 37-37 Take the T recorded in Table 1 37-37-2 In P 37 For cell Z37, when the full load power of cell heater 30 is 100%, T 37-1 Take the T recorded in Table 1 1-37-10 , T 37-37 Take the value of T in Table 1 37-37-10 .

[0101] K is fitted by fitting 37-1 , K 37-2 , K 37-3 , ... K 37-37 The values ​​of these coefficients, as well as b 37-1 , b 37-2 , b 37-3 , ...b 37-37 The values ​​of these constants.

[0102] After the values ​​of all coefficients and constants are determined, the coefficient matrix formed by the coefficients can be obtained as follows: The constant matrix formed by and constant is The above is a coefficient matrix and a constant matrix obtained by taking the number of cells 12 as 37 as an example. When the number of cells 12 is N, the coefficient matrix formed by the coefficients is The constant matrix formed by the constants is Wherein, N is the number of cells 12, and the coefficient matrix and the constant matrix are actually known quantities.

[0103] In the above fitting process, the corresponding coefficients and constants can be fitted by calculating the average value, or other methods can be used. In an optional scheme, the coefficient constant calculation substep is used to calculate the slope of the linear relationship to form a coefficient matrix and the constant of the linear relationship to form a constant matrix based on the linear relationship between the power of each cell heater 30 and the temperature of all cells 12 recorded by the least squares method. Of course, the embodiment of the present invention does not limit the specific data fitting method.

[0104] S202: Relationship building sub-step.

[0105] The relationship construction sub-step is used to construct a matrix equation between the target temperatures of the plurality of cells 12 and the target powers of the plurality of cell heaters 30 according to the coefficient matrix and the constant matrix obtained in the coefficient constant calculation sub-step, wherein the matrix equation is:

[0106]

[0107] T1…T N are the target temperatures of the plurality of cells 12, P1…P N The target powers required by the plurality of small area heaters 30 to achieve the target temperatures of the plurality of small areas 12 are respectively.

[0108] The specific process is as follows:

[0109] As described above, the temperature of each cell 12 will be affected by all the cell heaters 30. The target temperature of cell Z1 is T1. Then it can be obtained that:

[0110] T1=T 1-1 +T 2-1 +T 3-1 +…+T 37-1 ;

[0111] T1=k 1-1 ×P1+b 1～1 +k 2-1 ×P2+b 2～1 +k 3-1 ×P3+b3～1 +…+k 37-1 ×P 37 +b 37～1 ;

[0112] T1=(k 1-1 ×P1+k 2-1 ×P2+k 3-1 ×P3+…+k 37-1 ×P 37 )+(b 1～1 +b 2～1 +b 3～1 +…+b 37～1 ).

[0113] The target temperature of cell Z2 is T2, so it can be concluded that:

[0114] T2=T 1-2 +T 2-2 +T 3-2 +…+T 37-2 ;

[0115] T2=k 1-2 ×P1+b 1～2 +k 2-2 ×P2+b 2～2 +k 3-2 ×P3+b 3～2 +…+k 37-2 ×P 37 +b 37～2 ;

[0116] T2=(k 1-2 ×P1+k 2-2 ×P2+k 3-2 ×P3+…+k 37-2 ×P 37 )+(b 1～2 +b 2～2 +b 3～2 +…+b 37～2 ).

[0117] And so on, until cell Z37, the target temperature of cell Z37 is T37, and finally we get:

[0118] T 37 =T 1-37 +T 2-37 +T 3-37 +…+T 37-37 ;

[0119] T 37 =k 1-37 ×P1+b 1～37 +k 2-37 ×P2+b 2～37+k 3-37 ×P3+b 3～37 +…+k 37-37 ×P 37 +b 37～37 ;

[0120] T 37 =(k 1-37 ×P1+k 2-37 ×P2+k 3-37 ×P3+…+k 37-37 ×P 37 )+(b 1～37 +b 2～37 +

[0121] b 3～37 +…+b 37～37 ).

[0122] The calculation formulas for the target temperatures of all cells 12 can finally be combined into a matrix equation:

[0123]

[0124] The above is a matrix equation obtained by taking the number of cells 12 as 37 as an example. When the number of cells 12 is N, N is a positive integer, the matrix equation representing the relationship between the target temperatures of the multiple cells and the target powers of the multiple cell heaters is:

[0125] The matrix equation represents the relationship between the target temperatures of the plurality of cells 12 and the target powers of the plurality of cell heaters 30. Since the coefficient matrix and the constant matrix are both known quantities, then the target temperatures (T1 ... T2) of each cell 12 are N ) is determined, the target power (i.e., P1 ... P N In this embodiment, the obtained matrix equation can represent the relationship between the target temperatures of the plurality of cells 12 and the target powers of the plurality of cell heaters 30 .

[0126] The specific scheme of this temperature-power relationship acquisition step uses the premise that there is a linear relationship between the power of the cell heater 30 and the temperature of all the cells 12, thereby determining the coefficient matrix and constant matrix of the linear relationship, and then establishing a matrix equation that can more comprehensively characterize the relationship between the target temperatures of multiple cells and the target powers of multiple cell heaters based on the coefficient matrix and the constant matrix, thereby providing a definite calculation mode and control basis for the subsequent power control of multiple cell heaters, which is ultimately conducive to achieving more precise temperature control.

[0127] The method for constructing a temperature control model for a wafer carrier described in the above embodiment is based on the premise that the main zone 11 is stable at a preset temperature. As mentioned above, the preset temperature can be 40°C or other temperatures. The embodiment of the present application does not limit the specific value of the preset temperature. When the preset temperature is 40°C, a temperature control model is established when the main zone 11 is heated to 40°C. In order to establish a more comprehensive temperature control model, please refer to the following technical solution in the further technical solution. Figure 5 The method for constructing a temperature control model for a wafer carrier may further include:

[0128] S104, changing the preset temperature step.

[0129] The preset temperature replacement step is used to replace the preset temperature, and the main zone heater adjustment step, the small zone heater adjustment step and the temperature-power relationship acquisition step are re-executed after each replacement of the preset temperature. For example, in the previous process of building a temperature control model, the preset temperature is 40°C, then after the preset temperature replacement step, the replaced preset temperature can be 50°C. After the preset temperature is changed to 50°C, the temperature control model when the main zone 11 is heated to 50°C is established by re-executing the main zone heater adjustment step, the small zone heater adjustment step and the temperature-power relationship acquisition step.

[0130] The preset temperature changing step can change the preset temperature multiple times (i.e., at least twice), so as to facilitate the establishment of a broader temperature control model. During the changing process, the preset temperature can be changed based on the previous preset temperature at an equal temperature increment (e.g., 10°C). Of course, each change of the preset temperature can also be performed based on the previous preset temperature at a different temperature increment, which is not limited in the embodiment of the present invention.

[0131] For further technical solutions, please refer to Figure 5 The method for constructing a temperature control model for a wafer carrier may further include:

[0132] S105, step of determining the number of replacements.

[0133] In an embodiment of the present invention, the number of times the preset temperature is changed can be set as a second preset number. The number of changes judging step is used to judge whether the number of times the preset temperature is changed reaches the second preset number. When the number of times the preset temperature is changed reaches (i.e., equal to) the second preset number, the method of constructing the temperature control model of the wafer carrier is terminated, and when the number of times the preset temperature is changed does not reach (i.e., is less than) the second preset number, the main zone heater adjustment step, the small zone heater adjustment step, and the temperature-power relationship acquisition step are re-executed.

[0134] As described above, in the main zone heater adjustment step, it is necessary to control the power of the main zone heater 20 to remain unchanged when the temperature of the main zone 11 stabilizes to a preset temperature. Similarly, in the small zone heater adjustment step, it is necessary to record the power of the small zone heater 30 and the temperature of all small zones 12 each time the temperature of the main zone 11 and multiple small zones 12 stabilizes. It can be seen that both the main zone heater adjustment step and the small zone heater adjustment step include a main zone temperature stability judgment substep. The main zone temperature stability judgment substep is used to judge whether the main zone 11 is in a temperature stable state. There are many ways to judge whether the temperature of the main zone 11 is stable. Please refer to Figure 6 In an optional solution, the main zone temperature stability judgment sub-step may include:

[0135] S301 , determining whether a temperature change of the main zone 11 within a first preset time period is less than or equal to a first temperature change threshold.

[0136] S302: When the temperature change of the main area 11 within the first preset time period is less than or equal to the first temperature change threshold, determine that the temperature of the main area 11 is stable.

[0137] For example, the first temperature change threshold is 0.3°C, the first preset time period is 10 seconds, and within 10 seconds, the temperature of the main zone 11 changes from 39.9°C to 40.1°C, the temperature change is 0.2°C, and is less than 0.3°C, then it can be considered that the main zone 11 is in a temperature stable state.

[0138] The cell heater adjustment step may include a cell temperature stability judgment substep. The cell temperature stability judgment substep is used to judge whether the cell 12 is in a temperature stable state. There are many ways to judge whether the temperature of the cell 12 is stable. Please refer to Figure 7 In an optional solution, the cell temperature stability judgment sub-step may include:

[0139] S401 , determining one by one whether a temperature change of a plurality of cells 12 within a second preset time period is less than or equal to a second temperature change threshold.

[0140] S402: When the temperature changes of the plurality of cells 12 within the second preset time period are all less than or equal to the second temperature change threshold, determine that the temperatures of all the cells 12 are stable.

[0141] For example, the second preset time period is 1 second, the second temperature change threshold is 0.1°C, and the temperature of the cell 12 changes from 39.1°C to 39.05°C or 39.15°C within 1 second. The temperature change of the cell 12 within 1 second is 0.05°C. In this case, it can be said that the temperature of the cell 12 is stable. All cells 12 can be judged one by one in this way to determine whether the temperature is stable.

[0142] In a further technical solution, taking into account that the temperature stability judgment of the cell 12 is a relatively delicate judgment process, in order to avoid misjudgment caused by occasional errors, in a further optional solution, the cell temperature stability judgment sub-step may also include: when the temperature change of the cell 12 within the second preset time period is greater than the second temperature change threshold, repeatedly starting the step of checking whether the temperature change of the same cell 12 within the second preset time period is less than or equal to the second temperature change threshold once.

[0143] The judgment is started repeatedly, so that the temperature stability of the cell 12 can be judged again, so that the judgment can be more accurate. Of course, the number of times the judgment is started repeatedly is not limited to once, but can be multiple times (i.e., at least twice). Based on this, in a further technical solution, the cell temperature stability judgment sub-step can also include:

[0144] When the temperature change of the cell 12 in the second preset time period is greater than the second temperature change threshold, determining whether the current number of starts of the step of repeatedly starting whether the temperature change of the same cell 12 in the second preset time period is less than or equal to the second temperature change threshold reaches (i.e. is equal to) a third preset number;

[0145] When the current start-up times reaches the third preset times, an alarm is given and / or information indicating that the temperature of the cell 12 is unstable is issued. It should be noted that the “ / ” in this document indicates an “or” relationship.

[0146] This further technical solution can realize more judgment restarts, thereby better avoiding misjudgments.

[0147] In the cell heater adjustment step, each time the temperature of the main zone 11 and the multiple cells 12 is stable, the power of each cell heater 30 and the temperature of all cells 12 are recorded. In this process, the temperature of each cell 12 needs to be measured. There are many ways to measure the temperature of the cells 12. For example, the temperature of each cell 12 can be detected by an infrared detector, or by a thermocouple buried in the bearing surface 13. In an optional scheme, each time the temperature of the main zone 11 and the multiple cells 12 is stable, the power of each cell heater 30 and the temperature of all cells 12 are recorded, which may include: measuring the temperature of each cell 12 by a temperature measuring wafer, wherein: the temperature measuring wafer is arranged on the bearing surface 13 of the bearing seat 10, and the temperature measuring wafer is provided with a plurality of temperature sensors, and the plurality of temperature sensors can be opposite to the plurality of cells 12 one by one. The plurality of temperature sensors can detect the temperature of the plurality of cells 12 respectively. The temperature measuring wafer is used to detect the temperature of each cell 12, so that after the temperature measurement work is completed, the temperature measuring wafer can be directly removed, and the temperature measuring wafer can be further used in the construction of the temperature control model of the wafer carrier of another semiconductor process equipment to achieve the purpose of reuse.

[0148] Please refer again Figure 1 and Figure 2 In an optional solution, there may be multiple main zones 11, and the multiple main zones 11 are distributed concentrically along the radial direction of the support base 10, and each main zone 11 includes multiple small zones 12. Specifically, the multiple main zone heaters 20 may correspond to the multiple main zones 11 one by one, so as to heat the main zones 11 in which they are located, and the multiple small zone heaters 30 may correspond to the multiple small zones 12 one by one, so as to heat the small zones 12 in which they are located.

[0149] Please refer again Figure 1 In the wafer carrier 01 disclosed in the embodiment of the present invention, the carrier 10 may include a cooling base 101 and a main heating layer 102 and an insulating layer 103 sequentially stacked on the cooling base 101. The cooling base 101 is used to cooperate with the main zone heater 20 and the small zone heater 30 to adjust the temperature of the wafer carrier 01. Optionally, the main zone heater 20 may be arranged in the main heating layer 102, and the small zone heater 30 may be arranged in the insulating layer 103. Specifically, the insulating layer 103 may be a ceramic layer. This method of burying the main zone heater 20 and the small zone heater 30 in different layers can facilitate the installation of the two and avoid interference during installation.

[0150] Based on the method for constructing a temperature control model of a wafer carrier disclosed in an embodiment of the present invention, an electronic device is further disclosed in an embodiment of the present invention. Figure 8The disclosed electronic device includes at least one memory 001 and at least one processor 002, wherein the memory 001 stores a computer program, and the processor 002 is used to execute any one of the methods described in the above embodiments according to the computer program.

[0151] Optionally, the electronic device may be a desktop computer, a notebook computer, a mobile phone, an industrial control module integrated in a semiconductor process device, etc. The embodiment of the present invention does not limit the specific type of the electronic device. The memory 001 is a device of the electronic device itself. In order to distinguish it from the memory 02 described later, the memory 001 may be a first memory.

[0152] Based on the method for constructing a temperature control model of a wafer carrier disclosed in an embodiment of the present invention, an embodiment of the present invention discloses a semiconductor process equipment.

[0153] Please refer to Figure 1 , Figure 2 and Fig. 9 The disclosed semiconductor process equipment includes a wafer carrier 01 , a memory 02 and a controller 03 . The wafer carrier 01 includes a carrier seat 10 , a main zone heater 20 and a plurality of small zone heaters 30 .

[0154] The support base 10 includes a main zone 11 , and the main zone 11 includes a plurality of small zones 12 . The main zone heater 20 is used to heat the main zone 11 , and the small zone heater 30 is used to heat the small zones 12 .

[0155] The memory 02 is a device configured by the semiconductor process equipment itself. In order to distinguish it from the memory 001 in the above embodiment, the memory 02 can be considered as a second memory. The memory 02 is used to store the temperature control model constructed by the method described in the above embodiment.

[0156] The controller 03 is connected to the main zone heater 20 and the small zone heater 30 respectively. The controller 03 is used to calculate the target power of the multiple small zone heaters 30 according to the temperature control model, and control the multiple small zone heaters 30 to heat according to their respective target powers.

[0157] When the semiconductor process equipment is equipped with the electronic device described in the above embodiment, the first memory and the second memory may be the same device. Of course, the first memory and the second memory may not be the same device, and the embodiment of the present invention does not limit this.

[0158] Please refer again Fig. 9The semiconductor process equipment disclosed in the embodiment of the present invention may also include a chamber 04, and the wafer carrier 01 may be disposed in the chamber 04. Optionally, the memory 02 and the controller 03 may be integrated in the chamber 04, so as to facilitate on-site control. Of course, the memory 02 and the controller 03 may also be independent of the chamber 04 and located in a remote central control room, which is not limited by the embodiment of the present invention.

[0159] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different technical features of the various embodiments are not contradictory, they can be combined to form more specific embodiments. Considering the simplicity of the text, they will not be repeated here.

[0160] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A method for constructing a temperature control model of a wafer carrier, wherein the wafer carrier (01) comprises a carrier (10), a main zone heater (20) and a plurality of small zone heaters (30), wherein the carrier (10) comprises a main zone (11), wherein the main zone (11) comprises a plurality of small zones (12), wherein the main zone heater (20) is used to heat the main zone (11), and wherein the small zone heater (30) is used to heat the small zone (12), wherein the temperature control model of the wafer carrier (01) is characterized in that: The method comprises: a main zone heater adjustment step, for controlling the main zone heater (20) to heat the main zone (11) to a preset temperature, and controlling the power of the main zone heater (20) to remain unchanged when the temperature of the main zone (11) is stabilized to the preset temperature; a cell heater adjustment step, for adjusting the power of one of the plurality of cell heaters (30) for multiple times, and keeping the power of the other cell heaters (30) at zero, and recording the power of each cell heater (30) and the temperature of all the cells (12) each time when the temperature of the main zone (11) and the plurality of cells (12) is stable; and after the multiple adjustments of one of the plurality of cell heaters (30) are completed, selecting another of the plurality of cell heaters (30) to repeat the cell heater adjustment step until all the cell heaters (30) are adjusted; The temperature-power relationship acquisition step is used to acquire the relationship between the target temperatures of the multiple cells (12) and the target powers of the multiple cell heaters (30) based on the recorded power of each of the cell heaters (30) and the temperatures of all the cells (12).

2. The method according to claim 1, characterized in that The temperature-power relationship acquisition step comprises: A coefficient constant calculation sub-step, for calculating a coefficient matrix formed by the slope of the linear relationship and a constant matrix formed by the constants of the linear relationship based on the recorded linear relationship between the power of each of the small area heaters (30) and the temperature of all the small areas (12); A relationship construction sub-step is used to construct a matrix equation between the target temperatures of the plurality of cells (12) and the target powers of the plurality of cell heaters (30) according to the coefficient matrix and the constant matrix, wherein the matrix equation is: Wherein, N is the number of cells (12), and are the coefficient matrix and the constant matrix respectively, and both are known quantities, T1…T N are the target temperatures of the plurality of cells (12), P1…P N The target powers are respectively required by the plurality of zone heaters (30) to achieve the target temperatures of the plurality of zones (12).

3. The method according to claim 2, characterized in that The coefficient constant calculation sub-step is used to calculate the coefficient matrix formed by the slope of the linear relationship and the constant matrix formed by the constants of the linear relationship based on the recorded linear relationship between the power of each of the small area heaters (30) and the temperature of all the small areas (12) by using the least squares method.

4. The method according to claim 1, characterized in that: After the temperature-power relationship acquisition step, the method further includes: The preset temperature replacement step is used to replace the preset temperature multiple times, and after each replacement of the preset temperature, the main zone heater adjustment step, the small zone heater adjustment step and the temperature-power relationship acquisition step are re-executed.

5. The method according to claim 1, characterized in that: The main zone heater adjustment step and the small zone heater adjustment step both include a main zone temperature stability judgment sub-step, wherein the main zone temperature stability judgment sub-step includes: determining whether a temperature change of the main area (11) within a first preset time period is less than or equal to a first temperature change threshold; When the temperature change of the main zone (11) within the first preset time period is less than or equal to the first temperature change threshold, it is determined that the temperature of the main zone (11) is stable.

6. The method according to claim 1, characterized in that The cell heater adjustment step includes a cell temperature stability judgment sub-step, wherein the cell temperature stability judgment sub-step includes: Determining one by one whether the temperature change of the plurality of cells (12) within a second preset time period is less than or equal to a second temperature change threshold; When the temperature changes of the plurality of cells (12) within the second preset time period are all less than or equal to the second temperature change threshold, it is determined that the temperatures of all the cells (12) are stable.

7. The method according to claim 6, characterized in that The cell temperature stability judgment sub-step also includes: When the temperature change of the cell (12) within the second preset time period is greater than the second temperature change threshold, the step of checking whether the temperature change of the same cell (12) within the second preset time period is less than or equal to the second temperature change threshold is started again.

8. The method according to claim 7, characterized in that The cell temperature stability judgment sub-step also includes: In a case where the temperature change of the cell (12) within the second preset time period is greater than the second temperature change threshold, determining whether the current number of starts of the step of repeatedly starting whether the temperature change of the same cell (12) within the second preset time period is less than or equal to the second temperature change threshold has reached a third preset number; When the current number of starts reaches the third preset number, an alarm is issued and / or information indicating that the temperature of the cell (12) is unstable is issued.

9. The method according to claim 1, characterized in that: The method of adjusting the power of one of the plurality of cell heaters (30) for a plurality of times comprises: The power of one of the plurality of zone heaters (30) is adjusted multiple times according to equal power variation amplitudes.

10. The method according to claim 1, characterized in that Each time when the temperature of the main zone (11) and the plurality of small zones (12) is stable, the power of each small zone heater (30) and the temperature of all the small zones (12) are recorded, comprising: The temperature of each of the small areas (12) is measured by a temperature measuring wafer, wherein the temperature measuring wafer is arranged on a carrying surface (13) of the carrying seat (10), and the temperature measuring wafer is provided with a plurality of temperature sensors which are distributed one by one relative to the plurality of small areas (12).

11. The method according to any one of claims 1 to 10, characterized in that There are a plurality of main zones (11), and the plurality of main zones (11) are distributed concentrically and radially along the support seat (10). Each of the main zones (11) includes a plurality of small zones (12). The plurality of main zone heaters (20) correspond one-to-one to the plurality of main zones (11) so as to heat the main zones (11) in which they are located. The plurality of small zone heaters (30) correspond one-to-one to the plurality of small zones (12).

12. An electronic device, characterized in that: The method comprises at least one memory (001) and at least one processor (002), wherein the memory (001) stores a computer program, and the processor (002) is used to execute the method according to any one of claims 1 to 11 according to the computer program.

13. A semiconductor process equipment, characterized in that: The invention comprises a wafer carrier (01), a memory (02) and a controller (03); the wafer carrier (01) comprises a carrier seat (10), a main zone heater (20) and a plurality of small zone heaters (30); the carrier seat (10) comprises a main zone (11), the main zone (11) comprises a plurality of small zones (12); the main zone heater (20) is used to heat the main zone (11) in which it is located, and the small zone heater (30) is used to heat the small zone (12) in which it is located; The memory (02) is used to store the temperature control model constructed by the method according to any one of claims 1 to 11; The controller (03) is used to calculate the target power of the multiple small area heaters (30) according to the temperature control model, and control the multiple small area heaters (30) to heat according to their respective target powers.

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