Ion beam adjusting device, ion beam adjusting method and ion implantation equipment

Abstract

The invention relates to an ion beam adjusting device, an ion beam adjusting method and ion implantation equipment. The ion beam adjusting device comprises two movable electrode assemblies which are oppositely arranged in the vertical direction. The movable electrode assembly comprises a movable electrode plate and a driving mechanism. The driving mechanism is in transmission connection with the movable electrode plate, is located on the side, away from the movable electrode plate in the other movable electrode assembly, of the movable electrode plate and is used for driving the movable electrode plate to move in the vertical direction. Wherein the distance between the two movable electrode plates in the vertical direction is the width adjustment size of the ion beam. According to the invention, the width of the ion beam in the vertical direction can be accurately controlled, so that the product yield is effectively improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an ion beam adjustment device and an ion beam adjustment method, and ion implantation equipment. Background Art

[0002] Ion implantation is one of the important steps in semiconductor manufacturing, which directly determines the conductivity and capability of the device. With the widespread use of high-end processes and the rise of high-power automotive electronic devices, the conductivity requirements of power devices are getting higher and higher, for example, the accuracy requirements for turning on and off power devices are also getting higher and higher. However, the relevant technology does not yet have a technical means to effectively control the width of the ion beam in the vertical direction. Summary of the invention

[0003] Based on this, the embodiments of the present application provide an ion beam adjustment device and an ion beam adjustment method, and an ion implantation device, which can accurately control the width of the ion beam in the vertical direction to accurately control the three-dimensional morphology of the ion beam, thereby effectively improving the uniformity of ion implantation and improving product yield.

[0004] In order to achieve the above-mentioned purpose, on the one hand, some embodiments of the present application provide an ion beam adjustment device, which is arranged on the ion beam transmission path, including: two movable electrode assemblies arranged opposite to each other in the vertical direction. The movable electrode assembly includes: a movable electrode plate and a driving mechanism. The driving mechanism is connected to the movable electrode plate in a transmission manner, and is located on the side of the movable electrode plate away from the movable electrode plate in the other movable electrode assembly, and is used to drive the movable electrode plate to move in the vertical direction. Among them, the distance between the two movable electrode plates in the vertical direction is the width adjustment size of the ion beam.

[0005] In some embodiments of the present application, the movable electrode plate includes a graphite electrode plate.

[0006] In some embodiments of the present application, the movable electrode assembly further comprises an insulating connection structure, which is fixedly connected to the movable electrode plate and transmission-connected to the driving structure.

[0007] In some embodiments of the present application, the driving mechanism includes a stepping motor, a telescopic assembly and an encoder. The telescopic assembly is connected to the stepping electrode and the insulating connection structure. The encoder is connected to the stepping electrode and is used to record the moving position of the movable electrode plate, so that the stepping electrode stops driving when the distance between the two movable electrode plates in the vertical direction is the target width size of the ion beam.

[0008] In some embodiments of the present application, the ion beam adjustment device further includes an ion beam vertical angle detection unit. The ion beam vertical angle detection unit is respectively connected to the encoders in the two movable electrode assemblies, and is used to obtain the measured center point position of the distance between the two movable electrode plates in the vertical direction, determine whether the ion beam vertical angle is within a preset range according to the deviation between the measured center point position and the set center point position, and output a first ion beam adjustment instruction in response to the deviation not being within the preset range.

[0009] In some embodiments of the present application, the ion beam adjustment device further comprises a power management module, which is respectively connected to the movable electrode plates in the two movable electrode assemblies and is used to simultaneously apply a negative voltage of the same potential to the two movable electrode plates.

[0010] In some embodiments of the present application, the ion beam adjustment device further includes a current detection unit. The current detection unit is connected to the power management module, and is used to obtain the real-time current value of the power management module after the movable electrode plates in the two movable electrode assemblies reach the limit position, determine whether the difference between the real-time current value and the set current value is greater than the target threshold, and output the second ion beam adjustment instruction in response to the difference being greater than the target threshold.

[0011] On the other hand, the present application also provides an ion beam adjustment method according to some embodiments, which is applied to the ion beam adjustment device in the above embodiments. The ion beam adjustment method includes the following steps.

[0012] Get the target width dimension of the ion beam.

[0013] The movable electrode plates in the two movable electrode assemblies are driven to move in the vertical direction until the distance between the two movable electrode plates in the vertical direction is equal to the target width dimension of the ion beam.

[0014] In some embodiments of the present application, the ion beam adjustment method further includes: obtaining a measured center point position of the distance between two movable electrode plates in the vertical direction; determining whether the vertical angle of the ion beam is within a preset range according to a deviation between the measured center point position and the set center point position, and generating a first ion beam adjustment instruction in response to the deviation not being within the preset range; adjusting the ion beam according to the first ion beam adjustment instruction;

[0015] And / or, the ion beam adjustment device also includes a power management module connected to the movable electrode plates in the two movable electrode assemblies, respectively, and the power management module applies a negative voltage of the same potential to the two movable electrode plates at the same time. The ion beam adjustment method also includes: driving the two movable electrode plates to reach the limit position; obtaining the real-time current value of the power management module, and determining whether the difference between the real-time current value and the set current value is greater than the target threshold; generating a second ion beam adjustment instruction in response to the difference being greater than the target threshold; and adjusting the ion beam according to the second ion beam adjustment instruction.

[0016] On the other hand, the present application also provides an ion implantation device according to some embodiments, including the ion beam adjustment device as described in any of the above embodiments.

[0017] The embodiments of the present application may or at least have the following advantages:

[0018] In the embodiment of the present application, by setting two movable electrode assemblies on the ion beam transmission path and arranged opposite to each other in the vertical direction, the driving mechanism can drive the movable electrode plate to move in the vertical direction, and at the same time, the distance between the two movable electrode plates in the vertical direction is expressed as the width adjustment dimension of the ion beam in the vertical direction. In this way, the embodiment of the present application can accurately control the width of the ion beam in the vertical direction by accurately controlling the distance between the two movable electrode plates, thereby accurately controlling the three-dimensional morphology of the ion beam, so as to effectively improve the uniformity of ion implantation and improve the product yield. In addition, the ion beam adjustment device provided in the embodiment of the present application has a simple structure, will not hinder the ion beam transmission path, is easy to match and adapt to the machine, and can be widely used in various ion implantation processes (especially high-end processes).

[0019] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 is a structural block diagram of an ion beam adjustment device provided in some embodiments;

[0022] Figure 2 is a schematic structural diagram of a mobile electrode assembly provided in some embodiments;

[0023] Figure 3 A schematic diagram of the working principle of an ion beam adjustment device provided in some embodiments;

[0024] Figure 4 A schematic diagram of a current path of a power management module in an ion beam adjustment device provided in some embodiments;

[0025] Figure 5 is a schematic structural diagram of another ion beam adjustment device provided in some embodiments;

[0026] Figure 6 A schematic diagram of comparison between a measured center point position and a set center point position provided in some embodiments;

[0027] Figure 7 A schematic flow chart of an ion beam adjustment method provided in some embodiments;

[0028] Figure 8 A schematic flow chart of another ion beam adjustment method provided in some embodiments.

[0029] Description of reference numerals:

[0030] 1-first movable electrode assembly, 2-second movable electrode assembly, 10-movable electrode plate, 11-wire, 20-driving mechanism, 201-stepping motor, 202-telescopic assembly, 203-encoder, 30-insulating connection structure, 40-power management module, 50-ion beam vertical angle detection unit, 60-current detection unit. DETAILED DESCRIPTION

[0031] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0033] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion.

[0034] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0035] The ion beam is three-dimensional, and its horizontal and vertical dimensions (i.e., width) will affect the ion implantation process. Moreover, as the process width becomes smaller and smaller, the vertical width of the ion beam has an increasing impact on the ion implantation process. If the vertical width of the ion beam is too large or too small, it will cause uneven implantation in the ion implantation process.

[0036] In the related art, the ion beam is assumed to be a strip-shaped straight line, that is, only the width of the ion beam in the horizontal direction is adjusted, for example, the ion beam can be horizontally stretched and horizontally scaled by a magnetic field. The related art does not yet have a technical means that can effectively control the width of the ion beam in the vertical direction. Therefore, after controlling the target wafer to move up and down at a uniform speed in the vertical direction, the width of the ion beam in the vertical direction is defaulted to the theoretical design value, and the ion implantation amount and ion implantation uniformity are calculated based on this. However, in actual applications, taking the upward movement of the target wafer in the vertical direction as an example, if the width of the ion beam in the vertical direction is greater than the theoretical design value, ion implantation will occur in the place where ion implantation should not be calculated, thereby affecting the accuracy of ion implantation; and, if the width of the ion beam in the vertical direction is greater than the slit width of the corresponding Faraday sensor, some ion beams will not be received by the Faraday sensor, which will distort the calculation of the total amount of ions injected into the target wafer, resulting in uncontrollable or inaccurate ion implantation.

[0037] Based on this, the embodiments of the present application provide an ion beam adjustment device and an ion beam adjustment method, and an ion implantation device, which can accurately control the width of the ion beam in the vertical direction to accurately control the three-dimensional morphology of the ion beam, thereby effectively improving the uniformity of ion implantation and improving product yield.

[0038] See also Figure 1 , some embodiments of the present application provide an ion beam adjustment device, which is arranged on an ion beam transmission path, and includes: two movable electrode assemblies arranged opposite to each other in a vertical direction (eg, a Y direction); Figure 1 The first movable electrode assembly 1 and the second movable electrode assembly 2 are shown in the figure. The first movable electrode assembly 1 and the second movable electrode assembly 2 both include: a movable electrode plate 10 and a driving mechanism 20. The driving mechanism 20 is connected to the movable electrode plate 10 in a transmission manner, and is located on the side of the movable electrode plate 10 away from the movable electrode plate 10 in the other movable electrode assembly, and is used to drive the movable electrode plate 10 to move in a vertical direction (e.g., Y direction). The distance between the two movable electrode plates 10 in the vertical direction (e.g., Y direction) is the width adjustment size of the ion beam.

[0039] Illustratively, the ion beam transport path extends in a horizontal direction.

[0040] In the embodiment of the present application, by setting two movable electrode assemblies on the ion beam transmission path and relatively set in the vertical direction (for example, the Y direction), the driving mechanism 20 can drive the movable electrode plate 10 to move in the vertical direction (for example, the Y direction), and at the same time, the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction) is expressed as the width adjustment dimension of the ion beam in the vertical direction. In this way, the embodiment of the present application can accurately control the width of the ion beam in the vertical direction (for example, the Y direction) by accurately controlling the distance between the two movable electrode plates 10, thereby accurately controlling the three-dimensional morphology of the ion beam, so as to effectively improve the uniformity of ion implantation and improve the product yield. In addition, the ion beam adjustment device provided in the embodiment of the present application has a simple structure, does not hinder the ion beam transmission path, is easy to match and adapt to the machine, and can be widely used in various ion implantation processes (especially high-end processes).

[0041] In some embodiments of the present application, the movable electrode plate 10 includes but is not limited to a graphite electrode plate.

[0042] See also Figure 2 In some embodiments of the present application, the first movable electrode assembly 1 and the second movable electrode assembly 2 both further include an insulating connection structure 30. The insulating connection structure 30 is fixedly connected to the movable electrode plate 10 and is transmission-connected to the driving structure 20.

[0043] Please continue reading Figure 2 In some embodiments of the present application, the driving mechanism 20 includes a stepping motor 201, a telescopic assembly 202, and an encoder 203. The telescopic assembly 202 is connected to the stepping electrode 201 and the insulating connection structure 30. The encoder 203 is connected to the stepping motor 201 and is used to record the moving position of the movable electrode plate 10, so that the stepping electrode 201 stops driving when the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction) is the target width size of the ion beam.

[0044] The embodiment of the present application does not specifically limit the setting position of the encoder 203, and is limited to ensuring that it can detect and record the moving position of the movable electrode plate 10. It can be understood that the stepper motor 201 drives the movable electrode plate 10 to move through the telescopic component 202, and the encoder 203 can directly detect the moving position of the movable electrode plate 10, and can also indirectly obtain the moving position of the movable electrode plate 10 through the telescopic length of the telescopic component 202 and / or the driving output of the stepper motor 201. In addition, the connection between the encoder 203 and the stepper motor 201 can be a direct connection or an indirect connection, for example, through a controller, so that the controller controls the stepper motor 201 to start or stop.

[0045] Please combine Figure 2~Figure 4 It is understood that in some embodiments of the present application, the ion beam adjustment device further includes a power management module 40. The power management module 40 is connected to the movable electrode plates 10 in the first movable electrode assembly 1 and the second movable electrode assembly 2, respectively, for applying a negative voltage of the same potential to the two movable electrode plates 10 at the same time.

[0046] For example, Figure 2 As shown in FIG. 3 , a through hole is provided in the insulating connection structure 30 . The movable electrode plate 10 is connected to the power management module 40 through a wire 11 . The wire 11 can be passed through the through hole of the insulating connection structure 30 .

[0047] For example, the voltage range that the power management module 40 can apply to the movable electrode plate 10 includes but is not limited to 0KV~-20KV. For example, the voltage can be 0KV, -3KV, -5KV, -8KV, -10KV, -15KV or -20KV, etc.

[0048] In some examples, the voltage applied by the power management module 40 to the two movable electrode plates 10 is -3KV.

[0049] In the present application embodiment, please combine Figure 3It is understood that after the power management module 40 applies a negative voltage of the same potential to the two movable electrode plates 10 at the same time, not only can the negative voltage be used to converge the ion beam to reduce the ion beam transmission loss, but also the secondary electrons can be suppressed so that the ion beam hitting the movable electrode plate 10 does not generate secondary electrons, thereby ensuring radiation safety.

[0050] It can be understood that when the movable electrode plate 10 moves in the vertical direction (for example, the Y direction), the impure (for example, containing negative charges) or vertically wide ion beam will be blocked by the movable electrode plate 10, so that the vertical width of the ion beam after passing through the interval between the two movable electrode plates 10 is equal to the target width dimension W.

[0051] Also, see Figure 4 , after the power management module 40 applies the same negative voltage to the two movable electrode plates 10 at the same time, the ion beam (positive charge) will generate current when it hits the movable electrode plate 10. For example, the movable electrode plate 10 in the first movable electrode assembly 1 will generate a first current I1, and the movable electrode plate 10 in the second movable electrode assembly 2 will generate a second current I2. In this way, the current I of the power management module 40 will be equal to the sum of the first current I1 and the second electrode I2, that is, I=I1+I2. The current I of the power management module 40 can reflect the amount of ions hit by the ion beam on the movable electrode plate 10.

[0052] It should be added that the target width dimension W is determined by the process or can be preset. After the target width dimension W is determined, the interval between the two movable electrode plates 10 can be driven by the driving mechanism 20. On the basis that the interval between the two movable electrode plates 10 remains unchanged, when the current I of the power management module 40 is minimum, it means that the vertical width of the ion beam is the largest, and the ion beam can have the highest efficiency.

[0053] See also Figure 5 In some embodiments of the present application, the ion beam adjustment device further includes an ion beam vertical angle detection unit 50. The ion beam vertical angle detection unit 50 is respectively connected to the encoders 203 in the first movable electrode assembly 1 and the second movable electrode assembly 2, and is used to obtain the measured center point position of the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction), determine whether the ion beam vertical angle is within a preset range according to the deviation between the measured center point position and the set center point position, and output a first ion beam adjustment instruction in response to the deviation not being within the preset range.

[0054] For example, the deviation between the measured center point position and the set center point position can be measured by the ratio of the difference between the set center point position and the measured center point position to the set center point position.

[0055] Please combine Figure 6 It is understood that the moving position of the movable electrode plate 10 fed back by the encoder 203 of the ion beam vertical angle detection unit 50, for example, the position of the movable electrode plate 10 in the first movable electrode assembly 1 is the first position P1, and the position of the movable electrode plate 10 in the second movable electrode assembly 2 is the second position P2, can determine the measured center point position P of the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction), P=(P1+P2) / 2.

[0056] For example, Figure 6 As shown in , if the measured center point position is at the lowest point of the curve, the measured center point position is the first reference position P1, where the ion beam is at the maximum path position. At this time, if the set center point position P0 of the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction) is known (physical center point, which is known when the machine leaves the factory), then according to the deviation between the first reference position P1 and the set center point position P0, it can be determined whether the path midpoint of the ion beam in the vertical direction at this time is consistent with its corresponding set center point position.

[0057] For example, if |(P0-P1) / P0|≥M, it is determined that the vertical angle of the ion beam is not within the preset range, and the value range of M includes but is not limited to 0-10%. In some examples, M=1%.

[0058] In an embodiment of the present application, through the ion beam vertical angle detection unit 50, after obtaining the measured center point position of the distance between the two movable electrode plates 10 in the vertical direction (for example, the Y direction), it is possible to determine whether the vertical angle of the ion beam is within a preset range based on the deviation between the measured center point position and the set center point position, and output a first ion beam adjustment instruction in response to the deviation not being within the preset range, so as to shape the divergence degree of the ion beam according to the first ion beam adjustment instruction, thereby effectively realizing the detection of the vertical angle and the divergence degree of the ion beam by the ion beam adjustment device, and the shaping of the ion beam by the ion beam adjustment device.

[0059] Please continue reading Figure 5 In some embodiments of the present application, the ion beam adjustment device further includes a current detection unit 60. The current detection unit 60 is connected to the power management module 40, and is used to obtain the real-time current value of the power management module 40 after the movable electrode plate 10 in the first movable electrode assembly 1 and the second movable electrode assembly 2 reaches the limit position, determine whether the difference between the real-time current value and the set current value is greater than the target threshold, and output the second ion beam adjustment instruction in response to the difference being greater than the target threshold.

[0060] Here, the limit positions to be reached by the movable electrode plates 10 in the first movable electrode assembly 1 and the second movable electrode assembly 2 can be set according to the requirements. For the convenience of description, the limit position of the movable electrode plate 10 in the first movable electrode assembly 1 is the upper limit P11 of the ion beam path width, and the limit position of the movable electrode plate 10 in the second movable electrode assembly 2 is the lower limit P22 of the ion beam path width.

[0061] Optionally, the upper limit P11 and the lower limit P22 of the ion beam path width are symmetrically arranged with the center position of the distance between the two movable electrode plates 10 in the vertical direction (eg, Y direction) as the zero point. The upper and lower limit values ​​of the ion beam path width include: (-0.1mm~+0.1mm) to (-30mm~+30mm).

[0062] In some examples, the upper limit P11 of the ion beam path width is +5 mm, and the lower limit P22 of the ion beam path width is -5 mm.

[0063] For example, the target threshold is 1% of the set current value.

[0064] In an embodiment of the present application, through the current detection unit 60, the real-time current value of the power management module 40 can be obtained after the movable electrode plate 10 in the first movable electrode assembly 1 and the second movable electrode assembly 2 reaches the limit position, and in response to the difference between the real-time current value and the set current value being greater than the target threshold, the second ion beam adjustment instruction is output to shape the divergence degree of the ion beam according to the second ion beam adjustment instruction, thereby effectively realizing the detection of the divergence degree of the ion beam by the ion beam adjustment device and the shaping of the ion beam by the ion beam adjustment device.

[0065] Some embodiments of the present application also provide an ion beam adjustment method, which is applied to the ion beam adjustment device in the above embodiment. The ion beam adjustment method also has the technical advantages and corresponding technical features of the above ion beam adjustment device, which will not be described in detail here.

[0066] See also Figure 7 The ion beam adjustment method includes the following steps S100~S200.

[0067] S100, obtaining a target width dimension of the ion beam.

[0068] S200, driving the movable electrode plates in the two movable electrode assemblies to move in the vertical direction until the distance between the two movable electrode plates in the vertical direction is equal to the target width size of the ion beam.

[0069] In some embodiments of the present application, different structures matching the aforementioned ion beam adjustment device are shown in FIG. Figure 8The ion beam adjustment method also includes steps S310~S340 and / or steps S410~S440.

[0070] In some examples, the ion beam adjustment device includes an ion beam vertical angle detection unit 50. Steps S310 to S340 are described as follows.

[0071] S310, obtaining the measured center point position of the distance between two movable electrode plates in the vertical direction.

[0072] S320, determining whether the vertical angle of the ion beam is within a preset range according to the deviation between the measured center point position and the set center point position.

[0073] S330 : generating a first ion beam adjustment instruction in response to the deviation not being within a preset range.

[0074] S340, adjusting the ion beam according to the first ion beam adjustment instruction.

[0075] In some examples, the ion beam adjustment device includes a current detection unit 60. Steps S410 to S440 are described as follows.

[0076] S410, driving the two movable electrode plates to reach the limit position.

[0077] S420, obtaining a real-time current value of the power management module, and determining whether a difference between the real-time current value and a set current value is greater than a target threshold.

[0078] S430 , generating a second ion beam adjustment instruction in response to the difference being greater than a target threshold.

[0079] S440, adjusting the ion beam according to the second ion beam adjustment instruction.

[0080] It should be understood that although Figure 7 and Figure 8 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 7 and Figure 8 At least part of the steps may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the sub-steps or stages of other steps.

[0081] In order to more clearly illustrate the ion beam adjustment method provided in the embodiment of the present application, an ion beam adjustment method is provided as an example below.

[0082] In step S100 , a target width dimension of the ion beam is obtained.

[0083] In step S200, the movable electrode plates in the two movable electrode assemblies are driven to move in the vertical direction until the distance between the two movable electrode plates in the vertical direction is equal to the target width size of the ion beam.

[0084] In steps S310 to S340, the measured center point position of the distance between the two movable electrode plates in the vertical direction is obtained, and whether the vertical angle of the ion beam is within a preset range is determined based on the deviation between the measured center point position and the set center point position, and a first ion beam adjustment instruction is generated in response to the deviation not being within the preset range, and the ion beam is adjusted according to the first ion beam adjustment instruction until the deviation is within the preset range.

[0085] Here, optionally, after three adjustments, if the deviation is still not within the preset range, the machine can be controlled to stop and an alarm can be given so that the operator can perform ion beam vertical angle detection and machine hardware detection, and then return to step S100.

[0086] Furthermore, after the deviation is within the preset range, steps S410 to S440 are executed.

[0087] In steps S410 to S440, the two movable electrode plates are driven to reach the extreme positions, and the real-time current value of the power management module is obtained to determine whether the difference between the real-time current value and the set current value is greater than the target threshold, and then a second ion beam adjustment instruction can be generated in response to the difference being greater than the target threshold to adjust the ion beam according to the second ion beam adjustment instruction until the difference is less than or equal to the target threshold.

[0088] Similarly, optionally, after three adjustments, if the difference is still greater than the target threshold, the machine can be controlled to shut down and an alarm can be given so that the operator can perform ion beam divergence detection and machine hardware detection, etc.

[0089] Furthermore, after the deviation between the measured center point position and the set center point position is within a preset range and the difference between the real-time current value and the set current value is less than or equal to a target threshold, the ion implantation process is performed.

[0090] The ion beam adjustment method provided in the embodiment of the present application is simple and convenient, has high efficiency, and is conducive to improving product yield and product efficiency. The embodiment of the present application also provides an ion implantation device, including an ion beam adjustment device as described in any of the above embodiments. The technical advantages of the aforementioned ion beam adjustment device are also possessed by the ion implantation device, which will not be repeated here.

[0091] In the description of this specification, the description with reference to the terms "some embodiments", "some examples", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0092] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0093] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application.

Claims

1. An ion beam adjustment device, characterized in that: It is arranged on the ion beam transmission path, and includes: two movable electrode assemblies arranged opposite to each other in the vertical direction; the movable electrode assembly includes: Movable electrode plate; A driving mechanism, which is in driving connection with the movable electrode plate and is located on a side of the movable electrode plate away from the movable electrode plate in another movable electrode assembly, and is used to drive the movable electrode plate to move in a vertical direction; Wherein, the distance between the two movable electrode plates in the vertical direction is the width adjustment dimension of the ion beam.

2. The ion beam adjustment device according to claim 1, characterized in that: The movable electrode plate includes a graphite electrode plate.

3. The ion beam adjustment device according to claim 1, characterized in that: The mobile electrode assembly also includes: The insulating connection structure is fixedly connected to the movable electrode plate and is transmission-connected to the driving structure.

4. The ion beam adjustment device according to claim 3, characterized in that: The driving mechanism comprises: Stepper motor; A telescopic assembly, transmission-connecting the stepping electrode and the insulating connection structure; An encoder is connected to the stepping electrode and is used to record the moving position of the movable electrode plate so as to stop driving the stepping electrode when the distance between the two movable electrode plates along the vertical direction is the target width size of the ion beam.

5. The ion beam adjustment device according to claim 4, characterized in that: Also includes: An ion beam vertical angle detection unit is respectively connected to the encoders in the two movable electrode assemblies, and is used to obtain the measured center point position of the distance between the two movable electrode plates in the vertical direction, determine whether the vertical angle of the ion beam is within a preset range based on the deviation between the measured center point position and the set center point position, and output a first ion beam adjustment instruction in response to the deviation not being within the preset range.

6. The ion beam adjustment device according to any one of claims 1 to 5, characterized in that: Also includes: The power management module is connected to the movable electrode plates in the two movable electrode assemblies respectively, and is used for simultaneously applying a negative voltage of the same potential to the two movable electrode plates.

7. The ion beam adjustment device according to claim 6, characterized in that: Also includes: A current detection unit is connected to the power management module, and is used to obtain the real-time current value of the power management module after the movable electrode plates in the two movable electrode assemblies reach the limit position, determine whether the difference between the real-time current value and the set current value is greater than the target threshold, and output a second ion beam adjustment instruction in response to the difference being greater than the target threshold.

8. An ion beam adjustment method, characterized in that: Applied to the ion beam adjustment device according to any one of claims 1 to 7, the ion beam adjustment method comprises: Obtaining a target width dimension of the ion beam; The movable electrode plates in the two movable electrode assemblies are driven to move in a vertical direction until a distance between the two movable electrode plates in the vertical direction is equal to a target width dimension of the ion beam.

9. The ion beam adjustment method according to claim 8, characterized in that: The ion beam adjustment method further includes: obtaining a measured center point position of the distance between the two movable electrode plates in the vertical direction; determining whether the vertical angle of the ion beam is within a preset range according to a deviation between the measured center point position and a set center point position, and generating a first ion beam adjustment instruction in response to the deviation not being within the preset range; and adjusting the ion beam according to the first ion beam adjustment instruction; And / or, the ion beam adjustment device also includes a power management module respectively connected to the movable electrode plates in the two movable electrode assemblies, and the power management module simultaneously applies a negative voltage of the same potential to the two movable electrode plates; the ion beam adjustment method also includes: driving the two movable electrode plates to reach the extreme position; obtaining the real-time current value of the power management module, and determining whether the difference between the real-time current value and the set current value is greater than the target threshold; generating a second ion beam adjustment instruction in response to the difference being greater than the target threshold; and adjusting the ion beam according to the second ion beam adjustment instruction.

10. An ion implantation device, characterized in that: It comprises an ion beam adjustment device as described in any one of claims 1 to 7.

Images