Ignition chamber of semiconductor process equipment, semiconductor process equipment and control method

Abstract

The invention discloses an ignition chamber of semiconductor process equipment, the semiconductor process equipment and a control method, in the ignition chamber of the semiconductor process equipment, one end of a communicating pipeline and one end of a purging pipeline communicate with the first end of a combustion cavity, and the other end of the purging pipeline can communicate with a combustion-supporting gas source; one end of the exhaust pipeline, one end of the first gas inlet pipeline and one end of the second gas inlet pipeline communicate with the second end, opposite to the first end, of the combustion cavity, the other end of one of the first gas inlet pipeline and the second gas inlet pipeline can communicate with a combustible gas source, and the other end of the other one of the first gas inlet pipeline and the second gas inlet pipeline can communicate with a combustion-supporting gas source. According to the ignition chamber, the problem that when an existing ignition chamber is used for purging the ignition chamber before the wet oxygen process is carried out, part of oxygen flows into the process chamber to be subjected to the dry oxygen process with the workpiece to be machined, and the subsequent wet oxygen process is hindered can be solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor processing technology, and specifically relates to an ignition chamber of a semiconductor process equipment, semiconductor process equipment and a control method. Background Art

[0002] In the semiconductor processing process, the formation of silicon dioxide film on silicon wafer is a relatively basic process. At present, the process methods for forming silicon dioxide film usually include dry oxygen process, water vapor oxidation process and wet oxygen process. Considering factors such as film forming speed and film forming quality, wet oxygen process is a more widely used film forming process.

[0003] In the wet oxygen process, in order to avoid the introduction of impurities, high-purity hydrogen and oxygen are usually directly burned in the ignition chamber to form water vapor, and an excess of oxygen is introduced into the ignition chamber so that a mixture of water vapor and oxygen is input into the process chamber, and the wet oxygen process is then carried out using water vapor and oxygen.

[0004] However, when using the current ignition chamber for the wet oxygen process, since an excess amount of oxygen needs to be transported into the ignition chamber through an oxygen delivery pipeline before ignition, some of the oxygen will flow into the process chamber, thereby reacting with the workpiece to be processed to produce a high-density film layer. This high-density film layer will hinder the subsequent wet oxygen process. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide an ignition chamber for semiconductor process equipment, semiconductor process equipment and a control method to solve the problem that when the ignition chamber is purged before a wet oxygen process is performed using the current ignition chamber, part of the oxygen will flow into the process chamber and undergo a dry oxygen process with the workpiece to be processed, which will hinder the subsequent wet oxygen process.

[0006] In a first aspect, an embodiment of the present application discloses an ignition chamber of a semiconductor process equipment, which includes a combustion chamber, a connecting pipeline, a purge pipeline, an exhaust pipeline, a first air intake pipeline and a second air intake pipeline, wherein:

[0007] One end of each of the connecting pipeline and the purge pipeline is connected to the first end of the combustion chamber, and the other end of the purge pipeline can be connected to the combustion-supporting gas source;

[0008] One end of each of the exhaust pipeline, the first air intake pipeline and the second air intake pipeline is connected to the second end of the combustion chamber opposite to the first end, and the other end of one of the first air intake pipeline and the second air intake pipeline can be connected to the combustible gas source, and the other end of the other can be connected to the supporting combustion gas source.

[0009] In a second aspect, an embodiment of the present application discloses a semiconductor process equipment, including a process chamber and an ignition chamber of the semiconductor process equipment, wherein one end of the connecting pipe facing away from the combustion chamber is connected to the process chamber.

[0010] In a third aspect, an embodiment of the present application discloses a control method, which is applied to the above-mentioned semiconductor process equipment. The control method includes:

[0011] Controlling the first air intake pipeline and the second air intake pipeline to be closed, and controlling the purge pipeline and the exhaust pipeline to be opened;

[0012] After a preset time period, the purge pipeline and the exhaust pipeline are controlled to be closed;

[0013] The first air intake line and the second air intake line are controlled to be open.

[0014] The embodiment of the present application discloses an ignition chamber of a semiconductor process equipment, wherein a connecting pipeline and a purge pipeline are provided at the first end of the combustion chamber, and an exhaust pipeline, a first air intake pipeline and a second air intake pipeline are provided at the second end, wherein one of the first air intake pipeline and the second air intake pipeline can be connected to a combustible gas source, and the other can be connected to a combustion-supporting gas source, so that the combustible gas and the combustion-supporting gas can be introduced into the combustion chamber for combustion reaction. At the same time, the purge pipeline can also be connected to the combustion-supporting gas source, so that before the ignition chamber performs a combustion reaction, the combustion-supporting gas can be introduced into the combustion chamber in advance by using the purge pipeline to replace the original gas in the combustion chamber to prevent contamination of the workpiece to be processed. Furthermore, since the purge pipeline and the connecting pipeline are located at the same end of the combustion chamber and when the purge pipeline is opened, the exhaust pipeline at the other end of the combustion chamber can also be opened, so that the original gas in the combustion chamber and the combustion-supporting gas introduced through the purge pipeline basically do not flow into the process chamber through the connecting pipeline, which can prevent the dry oxygen process from occurring to the workpiece to be processed in the process chamber, thereby improving the processing efficiency and process effect of the wet oxygen process. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0016] Figure 1 A schematic diagram of a working mode of the ignition chamber disclosed in an embodiment of the present application;

[0017] Figure 2 A schematic diagram of another working mode of the ignition chamber disclosed in an embodiment of the present application;

[0018] Figure 3A schematic diagram of the structure of a semiconductor process equipment disclosed in an embodiment of the present application;

[0019] Figure 4 This is a flow chart of the control method disclosed in an embodiment of the present application.

[0020] Reference numerals:

[0021] 100-combustion chamber, 110-first cylinder, 120-second cylinder, 130-connecting section,

[0022] 210-connecting pipeline, 220-purge pipeline, 230-exhaust pipeline, 240-first air intake pipeline, 250-second air intake pipeline,

[0023] 300-flow plate,

[0024] 400-heating element,

[0025] 500-Process chamber. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0027] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0028] like Figure 1 and Figure 2 As shown, the embodiment of the present application discloses an ignition chamber of a semiconductor process equipment (hereinafter referred to as "ignition chamber"), which is used as a container for a combustible gas to undergo a combustion reaction, so that the combustible gas and the combustion-supporting gas can undergo a combustion process in the ignition chamber and generate materials such as water required in the semiconductor processing process. That is, the ignition chamber can work in conjunction with the process chamber 500 of the semiconductor process equipment to perform corresponding processes on the semiconductor. Figure 1-Figure 3As shown, the ignition chamber includes a combustion chamber 100 , a connecting line 210 , a purge line 220 , an exhaust line 230 , a first intake line 240 and a second intake line 250 .

[0029] The combustion chamber 100 is a space where the combustion reaction of the combustible gas and the combustion-supporting gas occurs. The combustion chamber 100 can be formed of high-temperature resistant materials such as quartz. The volume and shape of the combustion chamber 100 and other parameters can be determined according to actual conditions. Of course, in order to ensure that the combustion effect and efficiency of the combustible gas are relatively high, and to enable the combustion products to be discharged more easily and thoroughly outside the combustion chamber 100, the combustion chamber 100 is usually a linear structure, that is, the opposite ends of the combustion chamber 100 are distributed along a certain linear direction, and the aforementioned linear direction is the axial direction of the combustion chamber 100.

[0030] The connecting pipe 210, the purge pipe 220, the exhaust pipe 230, the first air intake pipe 240 and the second air intake pipe 250 are all used to transport gas. Of course, the connecting pipe 210 can also be used to transport combustion products. The diameter and other parameters of the above-mentioned can be flexibly determined according to actual conditions, and this document does not limit this. Among them, since the connecting pipe 210 is also used to transport combustion products with relatively high temperatures, for this reason, the connecting pipe 210 can be formed of high-temperature resistant materials such as quartz or metal.

[0031] In addition, in order to ensure that the gas transported into the combustion chamber 100 through the first air intake pipeline 240 and the second air intake pipeline 250 can undergo a combustion reaction, it is necessary to heat the gas transported in at least one of the first air intake pipeline 240 and the second air intake pipeline 250. Optionally, in the embodiment of the present application, the combustible gas and the combustion-supporting gas having a temperature exceeding the ignition point can be directly transported into the combustion chamber 100 through the first air intake pipeline 240 and the second air intake pipeline 250, so that the combustible gas and the combustion-supporting gas can be mixed in the combustion chamber 100 and then burned.

[0032] In order to reduce the process difficulty and improve the combustion reliability, in other embodiments of the present application, the semiconductor process equipment further includes a heating element 400. By arranging the heating element 400 outside the first air intake pipeline 240 and the second air intake pipeline 250, the gas in the first air intake pipeline 240 and the second air intake pipeline 250 can be heated, so that the temperature of the gas delivered to the combustion chamber 100 by the first air intake pipeline 240 and the second air intake pipeline 250 also meets the ignition temperature. More specifically, the second air intake pipeline 250 can be arranged outside the first air intake pipeline 240, and the combustible gas is delivered to the combustion chamber 100 through the first air intake pipeline 240, and the combustion-supporting gas is delivered to the combustion chamber 100 through the annular channel between the inner wall of the second air intake pipeline 250 and the outer wall of the first air intake pipeline 240, so that the mixing degree between the combustion-supporting gas and the combustible gas is relatively higher, so as to improve the combustion efficiency and thoroughness of the combustible gas. As for the ports of the first air intake pipeline 240 and the second air intake pipeline 250 respectively connected to the air source, the port of the first air intake pipeline 240 can be located at the end, and the port of the second air intake pipeline 250 can be located on the side wall of the second air intake pipeline 250.

[0033] During the process of assembling the ignition chamber, one end of each of the connecting pipe 210 and the purge pipe 220 is connected to the first end of the combustion chamber 100, and the other end of the purge pipe 220 is connected to the combustion-supporting gas source, so that the combustion-supporting gas can be transported into the combustion chamber 100 through the purge pipe 220. The combustion-supporting gas can be specifically oxygen. The other end of the connecting pipe 210 can be connected to the process chamber 500, so that the combustion products and excess oxygen in the combustion chamber 100 are transported to the process chamber 500 for a wet oxygen process.

[0034] At the same time, one end of each of the exhaust pipeline 230, the first air intake pipeline 240 and the second air intake pipeline 250 is connected to the second end of the combustion chamber 100 opposite to the first end thereof, and the other end of one of the first air intake pipeline 240 and the second air intake pipeline 250 is connected to the combustible gas source, and the other end of the other is connected to the combustion-supporting gas source, so that the combustible gas and the combustion-supporting gas can be transported to the combustion chamber 100, and after the temperature meets the ignition point and the two are mixed in the combustion chamber 100, the combustible gas can be burned. In the embodiment of the present application, in order to carry out the wet oxygen process, the combustible gas is specifically hydrogen, and the combustion-supporting gas is specifically oxygen, so as to ensure that the combustion products of the combustible gas and the combustion-supporting gas are only water. In addition, the oxygen introduced into the combustion chamber 100 is in an excess state, so as to ensure that after the hydrogen is completely burned, some oxygen still exists, that is, the volume ratio of hydrogen and oxygen is greater than 2:1, and more specifically, the volume ratio of oxygen and hydrogen introduced into the combustion chamber 100 can be equal, so as to ensure that the hydrogen can be completely burned. As for the exhaust pipe 230, it can be specifically connected to the factory exhaust, so that the gas exhausted from the combustion chamber 100 through the exhaust pipe 230 can be transported to the factory exhaust to be discharged and processed.

[0035] Based on the above-mentioned ignition chamber disclosed in the embodiment of the present application, before using it for a wet oxygen process, a combustion-supporting gas can be introduced into the combustion chamber 100 through the purge line 220 in advance, and the exhaust line 230 can be opened, so that the original gas in the combustion chamber 100 and the introduced combustion-supporting gas can be discharged to the outside of the combustion chamber 100 through the exhaust line 230, so that only the combustion-supporting gas exists in the combustion chamber 100, thereby preventing other gases or impurities from contaminating the film forming process. At the same time, since the exhaust pipe 230 is kept open while the combustion-supporting gas is introduced into the combustion chamber 100 via the purge pipe 220, the gas in the combustion chamber 100 can flow as a whole in a direction away from the connecting pipe 210, thereby greatly reducing or even preventing the combustion-supporting gas from flowing into the process chamber 500 connected to the connecting pipe 210, and basically preventing the original gas in the combustion chamber 100 from flowing into the process chamber 500, thereby ensuring that the workpiece to be processed in the process chamber 500 will basically not undergo a dry oxygen process.

[0036] In addition, when expelling the original gas and impurities in the combustion chamber 100, in order to prevent the gas impurities from reacting with oxygen to generate precipitation and other substances that cannot be discharged outside the combustion chamber 100, before oxygen is introduced through the purge line 220, an excess of nitrogen can be introduced first to replace the original gas in the combustion chamber 100 with nitrogen, and then oxygen is introduced into the combustion chamber 100 through the purge line 220 to replace the nitrogen. In the process of introducing nitrogen, the type of gas source connected to one of the first air inlet line 240 and the second air inlet line 250 can be changed so that nitrogen can be introduced into the combustion chamber 100. In another embodiment of the present application, the purge line 220 can be used to first deliver nitrogen into the combustion chamber 100, thereby minimizing or even preventing nitrogen from flowing into the process chamber 500 through the connecting line 210; after the nitrogen continues to flow into the process chamber 500 for a period of time, the gas source connected to the purge line 220 can be replaced, and oxygen can be further delivered into the combustion chamber 100 to replace the nitrogen in the combustion chamber 100 with oxygen.

[0037] The embodiment of the present application discloses an ignition chamber of a semiconductor process equipment, wherein a connecting pipeline 210 and a purge pipeline 220 are provided at the first end of the combustion chamber 100, and an exhaust pipeline 230, a first air intake pipeline 240 and a second air intake pipeline 250 are provided at the second end, wherein one of the first air intake pipeline 240 and the second air intake pipeline 250 can be connected to a combustible gas source, and the other can be connected to a combustion-supporting gas source, so that the combustible gas and the combustion-supporting gas can be introduced into the combustion chamber 100 for combustion reaction. At the same time, the purge pipeline 220 can also be connected to the combustion-supporting gas source, so that before the ignition chamber performs a combustion reaction, the combustion-supporting gas is introduced into the combustion chamber 100 in advance by using the purge pipeline 220 to replace the original gas in the combustion chamber 100 to prevent contamination of the workpiece to be processed. Furthermore, since the purge line 220 and the connecting line 210 are located at the same end of the combustion chamber 100, and when the purge line 220 is opened, the exhaust line 230 located at the other end of the combustion chamber 100 can also be opened, so that the original gas in the combustion chamber 100 and the combustion-supporting gas introduced through the purge line 220 basically will not flow into the process chamber 500 through the connecting line 210, which can prevent the dry oxygen process from occurring to the workpiece to be processed in the process chamber 500, thereby improving the processing efficiency and process effect of the wet oxygen process.

[0038] Based on the above embodiment, in the process of introducing hydrogen into the ignition chamber, if the wet oxygen process requires more raw materials, the input flow rate of hydrogen needs to be relatively large within the same process time, thereby making the flow rate of hydrogen relatively large, resulting in part of the hydrogen being transported to the process chamber before a combustion reaction occurs in the ignition chamber, thereby causing it to further react with oxygen in the process chamber to generate a large amount of heat, which has a significant adverse effect on the temperature uniformity in the process chamber, which can easily cause the failure of the semiconductor film forming process.

[0039] To this end, when the ignition chamber disclosed in the embodiment of the present application is used for a combustion reaction, if the flow rate of hydrogen is relatively large, the combustion-supporting gas can be introduced into the combustion chamber 100 through the purge line 220 while the combustion-supporting gas is introduced through one of the first air inlet line 240 and the second air inlet line 250. Since the flow direction of the combustion-supporting gas introduced into the combustion chamber 100 through the purge line 220 is opposite to the flow direction of the hydrogen, the two gases can be mixed with each other to form turbulence. On the one hand, the flow rate of the hydrogen can be reduced, and on the other hand, the mixing degree of hydrogen and oxygen can be increased, thereby accelerating the combustion rate of the hydrogen and improving the thoroughness of the combustion of the hydrogen, greatly improving or even preventing the situation where the hydrogen does not undergo a combustion process in the combustion chamber 100 but directly flows into the process chamber 500 through the connecting line 210.

[0040] In addition, when using the purge pipe 220 to introduce combustion-supporting gas into the combustion chamber 100, the volume ratio of the combustible gas and the combustion-supporting gas delivered to the combustion chamber 100 through the first air intake pipe 240 and the second air intake pipe 250 can be maintained unchanged, or the volume of the combustion-supporting gas delivered to the combustion chamber 100 through the first air intake pipe 240 or the second air intake pipe 250 can be appropriately reduced according to actual conditions, and when using the purge pipe 220 to introduce combustion-supporting gas into the combustion chamber 100, the volume ratio of the combustible gas and the combustion-supporting gas introduced into the combustion chamber 100 is kept unchanged, that is, the volume of the combustion-supporting gas delivered to the combustion chamber 100 must always be greater than the volume of the combustible gas. It should be noted that, when the weight of the combustion products required by the process remains unchanged, the volumes of the combustible gas and the combustion-supporting gas introduced into the combustion chamber 100 are basically constant, and the flow rates of the combustible gas and the combustion-supporting gas when introduced into the combustion chamber 100 are related to the process time. That is, when the flow rate of the combustible gas is relatively large, it does not mean that the volume of the combustible gas introduced into the combustion chamber 100 must be large. Correspondingly, when the flow rate of the combustible gas is relatively small, it does not mean that the volume of the combustible gas introduced into the combustion chamber 100 must be small.

[0041] As described above, the purge line 220 can be used to transport combustion-supporting gas into the combustion chamber 100 to replace the original gas in the combustion chamber 100. In order to further improve the efficiency and thoroughness of the expulsion of the original gas in the combustion chamber 100, in the embodiment of the present application, the ignition chamber may further include a flow equalizer 300, which is disposed in the combustion chamber 100, and the flow equalizer 300 is spaced apart from the opposite ends of the combustion chamber 100. That is, in the axial direction of the combustion chamber 100, the flow equalizer 300 is located at a certain position between the opposite ends of the combustion chamber 100.

[0042] At the same time, the flow plate 300 is provided with a connecting hole and a plurality of flow-uniform holes, and the connecting hole and each flow-uniform hole are all arranged through the flow plate 300, so as to ensure that the gases on opposite sides of the flow plate 300 can flow to each other. Among them, one end of the connecting pipe 210 is connected to the connecting hole, so that the combustion products and the remaining oxygen in the combustion chamber 100 can flow into the connecting pipe 210 through the connecting hole, and finally be transported to the process chamber 500. In addition, since each flow-uniform hole is all through the flow plate 300, the purge pipe 220 arranged at the first end of the combustion chamber 100 can be connected with the exhaust pipe 230 through the plurality of flow-uniform holes, so that the combustion-supporting gas output through the purge pipe 220 can flow to the side of the flow plate 300 away from the purge pipe 220 through the plurality of flow-uniform holes, which makes the purge effect of the combustion-supporting gas output from the purge pipe 220 relatively better, and improves the purge efficiency and effect of the original gas in the combustion chamber 100.

[0043] Specifically, the flow plate 300 can be formed of high-temperature resistant materials such as metal or quartz, and the flow plate 300 can be fixed in the combustion chamber 100 by welding or bonding. Of course, since the opposite sides of the flow plate 300 do not necessarily need to be isolated from each other, the flow plate 300 can also be only embedded in the combustion chamber 100, and no longer form a fixed connection relationship with the combustion chamber 100.

[0044] In addition, when the flow plate 300 is provided, if the flow rate of hydrogen is relatively large, when the purge pipe 220 delivers the combustion-supporting gas to the combustion chamber 100, the flow plate 300 can evenly flow the combustion-supporting gas input through the purge pipe 220, thereby further enhancing the speed reduction and flow evenness effect of the combustion-supporting gas on the hydrogen, and further improving the thoroughness of hydrogen combustion.

[0045] As described above, the flow plate 300 is disposed between the opposite ends of the combustion chamber 100. In a specific embodiment of the present application, the distance between the flow plate 300 and the first end of the combustion chamber 100 can be smaller than the distance between the flow plate 300 and the second end of the combustion chamber 100. That is, the distance between the flow equalizer plate 300 and the purge line 220 is smaller than the distance between the flow equalizer plate 300 and the first air intake line 240, which makes the distance between the second end of the combustion chamber 100 and the flow equalizer plate 300 relatively larger, thereby providing a larger space for the combustion process of hydrogen and oxygen; in addition, it also allows the gas transported from the purge line 220 to the combustion chamber 100 to be filled into the clamping space between the first end of the combustion chamber 100 and the flow equalizer plate 300 in the shortest possible time, so that the combustion-supporting gas can flow more evenly from the multiple flow equalizer holes on the flow equalizer plate 300 toward the side of the flow equalizer plate 300 where the second end of the combustion chamber 100 is located, thereby improving the distribution uniformity of the combustion-supporting gas transported from the purge line 220 to the combustion chamber 100.

[0046] In the above embodiment, the combustion chamber 100 may be a linear structure, and the interior of the combustion chamber 100 is a hollow structure to provide a space for accommodating and burning the gas. In a specific embodiment of the present application, the area of ​​any cross section of the combustion chamber 100 distributed along its own axial direction is equal, for example, the combustion chamber 100 is a straight prism hollow structure.

[0047] In another embodiment of the present application, the combustion chamber 100 includes at least two parts with different cross-sectional areas. In detail, the combustion chamber 100 includes a first cylinder 110 and a second cylinder 120, wherein one end of the first cylinder 110 is connected to the first air intake pipe 240, and one end of the second cylinder 120 is connected to the connecting pipe 210, and by connecting the other end of the first cylinder 110 with the other end of the second cylinder 120, the first air intake pipe 240 can still be connected to the connecting pipe 210.

[0048] Among them, the cross-sectional area of ​​the inner surface of the first cylinder 110 is the first area, the cross-sectional area of ​​the inner surface of the second cylinder 120 is the second area, and the first area is smaller than the second area. In other words, in the embodiment of the present application, the cross-sectional area of ​​the portion of the combustion chamber 100 connected to the first air intake pipeline 240 and the second air intake pipeline 250 is relatively small, while the cross-sectional area of ​​the portion of the combustion chamber 100 connected to the connecting pipeline 210 is relatively large, so that after the hydrogen and oxygen are sent into the combustion chamber 100 from the first air intake pipeline 240 and the second air intake pipeline 250, and flow from the first cylinder 110 with a smaller cross-sectional area to the second cylinder 120 with a relatively larger cross-sectional area, a certain diffusion effect can be generated, which can improve the mixing degree between hydrogen and oxygen, and thus improve the combustion efficiency and thoroughness of hydrogen. In addition, when the cross-sectional area of ​​the second cylinder 120 is relatively large, the size of the inner wall of the second cylinder 120 is also relatively large, thereby providing a larger space for the combustion process, preventing the flame generated by the combustion process from coming into close contact with the second cylinder 120, and thereby increasing the service life of the second cylinder 120.

[0049] In order to further improve the diffusion effect of hydrogen and oxygen, in the embodiment of the present application, the combustion chamber 100 also includes a connecting section 130, so that the first barrel 110 and the second barrel 120 are connected through the connecting section 130, and in the direction from the first barrel 110 to the second barrel 120, the cross-sectional area of ​​the connecting section 130 gradually increases from the first area to the second area. That is, in the embodiment of the present application, the connecting section 130 is a flared structure, which makes the combustion chamber 100 relatively better in diffusing hydrogen and oxygen, thereby further improving the combustion efficiency and thoroughness of hydrogen. Of course, in the molding process of the combustion chamber 100, in order to improve its structural strength and reliability, the combustion chamber 100 including the first barrel 110, the second barrel 120 and the connecting section 130 can be formed together by means of integral sintering or the like.

[0050] In order to further improve the combustion efficiency and completeness of hydrogen and prevent hydrogen from accumulating at the edge corners of the combustion chamber, in the embodiment of the present application, the inner surface of the first barrel 110 and the inner surface of the second barrel 120 are both cylindrical side structures. Accordingly, in order to reduce the difficulty of processing the first barrel 110 and the second barrel 120, the outer surfaces of the two can also be cylindrical side structures. In addition, by making the inner and outer surfaces of the connecting section 130 both truncated cone side structures, the number of dead corners in the combustion chamber 100 can be further reduced. Of course, the parameters such as the inner diameter and outer diameter of the first barrel 110 and the second barrel 120 can be flexibly determined according to actual conditions and are not limited here.

[0051] As described above, the connecting pipeline 210 and the purge pipeline 220 are both arranged at the first end of the combustion chamber 100, and the first air intake pipeline 240, the second air intake pipeline 250 and the exhaust pipeline 230 can be arranged at the second end of the combustion chamber 100. In the case where the combustion chamber 100 includes the above-mentioned first cylinder 110 and the second cylinder 120, since the size of the first cylinder 110 is relatively small, in order to reduce the difficulty of installing the first air intake pipeline 240, the second air intake pipeline 250 and the exhaust pipeline 230, the first air intake pipeline 240 and the second air intake pipeline 250 can be connected to the end face of the first cylinder 110, and the exhaust pipeline 230 can be connected to the end face of the first cylinder 110. The side wall of the first cylinder 110 makes the hydrogen and oxygen transported from the first air inlet pipe 240 and the second air inlet pipe 250 to the combustion chamber 100 have an initial velocity along the axial direction of the combustion chamber 100, which is beneficial for the combustion products and the remaining oxygen to be transported to the process chamber 500 through the connecting pipe 210 located at the first end of the combustion chamber 100, and can reduce the difficulty of installing the exhaust pipe 230; in addition, if the hydrogen and oxygen are heated by arranging a heating element 400 outside the first air inlet pipe 240 and the second air inlet pipe 250, it can also be ensured that the exhaust pipe 230 will not hinder the installation of the heating element 400.

[0052] At the same time, in order to ensure that the impurity gas in the combustion chamber 100 can be discharged from the exhaust pipe 230 to the outside of the combustion chamber 100 more thoroughly, in the axial direction of the first cylinder 110, the distance between the exhaust pipe 230 and the end of the first cylinder 110 where the first air intake pipe 240 is located can be made smaller than the distance between the exhaust pipe 230 and the first cylinder 110 away from the first air intake pipe 240. That is, in the process of designing the position of the exhaust pipe 230, it is still necessary to make the exhaust pipe 230 as close as possible to the end of the first cylinder 110 where the first air intake pipe 240 is located, that is, the second end of the entire combustion chamber 100 away from the purge pipe 220.

[0053] Since the size of the second cylinder 120 is relatively large, and no other devices are required outside the connecting pipe 210, in the embodiment of the present application, the connecting pipe 210 and the purge pipe 220 can be connected to the end surface of the second cylinder 120, so as to facilitate the installation and assembly of the combustion chamber 100. In addition, in order to reduce the difficulty of the combustion products and the remaining oxygen generated in the combustion chamber 100 flowing into the connecting pipe 210, in the embodiment of the present application, along the direction perpendicular to the axial direction of the second cylinder 120, the connecting pipe 210 can be located in the central area of ​​the second cylinder 120, so as to facilitate the combustion products and gases in the combustion chamber 100 to flow to the connecting pipe 210; at the same time, the purge pipe 220 is located outside the connecting pipe 210, which can also ensure that the purge pipe 220 can normally transport the combustion-supporting gas into the combustion chamber 100.

[0054] An ignition chamber of a semiconductor process equipment disclosed in any of the above embodiments, such as Figure 3 As shown, an embodiment of the present application also discloses a semiconductor process equipment, which includes a process chamber 500 and an ignition chamber of any of the above-mentioned semiconductor process equipment, and the end of the connecting pipe 210 in the ignition chamber away from the combustion chamber 100 is connected to the process chamber 500, so that the combustion products and remaining oxygen generated in the combustion chamber 100 can be transported to the process chamber 500 through the connecting pipe 210, and a wet oxygen process is performed with the workpiece to be processed in the process chamber 500 to form a silicon dioxide film on the surface of the workpiece to be processed.

[0055] Furthermore, if Figure 4 As shown, the embodiment of the present application further discloses a control method, which can be applied to the semiconductor process equipment disclosed in the above embodiment, and the control method includes:

[0056] S1. Control the first air inlet pipeline 240 and the second air inlet pipeline 250 to be closed, and control the purge pipeline 220 and the exhaust pipeline 230 to be opened. That is, before the combustible gas such as hydrogen and the combustion-supporting gas such as oxygen are introduced into the combustion chamber 100 through the first air inlet pipeline 240 and the second air inlet pipeline 250, the combustion chamber 100 is first purged by the purge pipeline 220, and the original gas and purge gas in the combustion chamber 100 can be discharged from the exhaust pipeline 230 to the outside of the combustion chamber 100, which greatly reduces or even prevents the purge gas and the original gas and impurities in the combustion chamber 100 from flowing to the process chamber 500 through the connecting pipeline 210, thereby improving the process effect and success rate.

[0057] S2. After a preset time, the purge pipeline 220 and the exhaust pipeline 230 are controlled to be closed. That is, after the purge gas is continuously input into the combustion chamber 100 through the purge pipeline 220 within the preset time period, it can be considered that the original gas in the combustion chamber 100 can be expelled. At this time, in order to allow the combustion process to proceed normally, the purge pipeline 220 and the exhaust pipeline 230 need to be closed.

[0058] S3. Control the first air inlet pipeline 240 and the second air inlet pipeline 250 to open. That is, after the purge gas input from the purge pipeline 220 is used to expel the original gas in the combustion chamber, hydrogen and oxygen can be input to cause a combustion reaction between the two in the combustion chamber 100 to generate water vapor. The water vapor and the remaining oxygen can be transported to the process chamber 500 through the connecting pipeline 210 to undergo a wet oxygen process with the workpiece to be processed.

[0059] It should be noted that in the control method disclosed in the embodiment of the present application, the purge gas delivered to the combustion chamber 100 through the purge pipe 220 includes at least a combustion-supporting gas, that is, oxygen, and it can be determined according to actual needs whether nitrogen is first input into the combustion chamber 100 before oxygen is input through the purge pipe 220. Of course, the device used to provide control in the above control method can be specifically a controller.

[0060] Considering that if the flow rate of hydrogen is relatively large during the combustion process, it is possible that the hydrogen cannot be completely burned due to the relatively large flow rate of hydrogen, and thus flows into the process chamber 500 through the connecting pipe 210, so that the hydrogen reacts with oxygen in the process chamber 500 to generate heat, which will have a great adverse effect on the temperature uniformity in the process chamber 500, and may cause the wet oxygen process to fail.

[0061] To this end, in the embodiment of the present application, further, the above step S3 includes:

[0062] S31, controlling the first air intake pipeline 240 and the second air intake pipeline 250 to be both open, and when the flow rate of the combustible gas is less than or equal to the reference flow rate, controlling the purge pipeline 220 to be closed;

[0063] or,

[0064] S32, controlling the first air intake pipeline 240 and the second air intake pipeline 250 to be opened, and when the flow rate of the combustible gas is greater than the reference flow rate, controlling the purge pipeline 220 to be opened.

[0065] That is, in the embodiment of the present application, the on / off state of the purge line 220 can be controlled according to the flow rate of hydrogen, and when the flow rate of hydrogen is relatively small, the purge line 220 is not used to introduce the combustion-supporting gas into the combustion chamber 100, thereby reducing the control difficulty of the semiconductor process equipment; and when the flow rate of hydrogen is relatively large, the purge line 220 can be used to introduce the combustion-supporting gas in the opposite direction of the flow direction of hydrogen into the combustion chamber 100, thereby improving the combustion efficiency and thoroughness of the hydrogen, and preventing the hydrogen from flowing into the process chamber 500 without burning, thereby affecting the normal progress of the wet oxygen process.

[0066] It should be noted that, in this article, the terms "comprise", "include" or any other variant thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise one..." do not exclude the presence of other identical elements in the process, method, article or device including the element. In addition, it should be pointed out that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in reverse order according to the functions involved, for example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.

[0067] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. An ignition chamber of a semiconductor process equipment, characterized in that: It includes a combustion chamber, a connecting pipeline, a purge pipeline, an exhaust pipeline, a first air intake pipeline and a second air intake pipeline, wherein: One end of each of the connecting pipeline and the purge pipeline is connected to the first end of the combustion chamber, and the other end of the purge pipeline can be connected to the combustion-supporting gas source; One end of each of the exhaust pipeline, the first air intake pipeline and the second air intake pipeline is connected to the second end of the combustion chamber opposite to the first end, and the other end of one of the first air intake pipeline and the second air intake pipeline can be connected to the combustible gas source, and the other end of the other can be connected to the supporting combustion gas source.

2. The ignition chamber of the semiconductor process equipment according to claim 1, characterized in that: The ignition chamber further comprises a flow equalizer plate, which is arranged in the combustion chamber, and the flow equalizer plate is spaced apart from both ends of the combustion chamber; The flow equalizer plate is provided with a connecting hole and a plurality of flow equalizer holes, the connecting hole and each of the flow equalizer holes are arranged through the flow equalizer plate, one end of the connecting pipeline is connected to the connecting hole, and the purge pipeline is connected to the exhaust pipeline through the plurality of the flow equalizer holes.

3. The ignition chamber of the semiconductor process equipment according to claim 2, characterized in that: The distance between the flow equalizer plate and the first end of the combustion chamber is smaller than the distance between the flow equalizer plate and the second end of the combustion chamber.

4. The ignition chamber of the semiconductor process equipment according to claim 1, characterized in that: The combustion chamber includes a first cylinder and a second cylinder, one end of the first cylinder is connected to the first air intake pipe, one end of the second cylinder is connected to the connecting pipe, the other end of the first cylinder is connected to the other end of the second cylinder, the cross-sectional area of ​​the first cylinder is a first area, the cross-sectional area of ​​the second cylinder is a second area, and the first area is smaller than the second area.

5. The ignition chamber of the semiconductor process equipment according to claim 4, characterized in that: The combustion chamber also includes a connecting section, the first cylinder and the second cylinder are connected by the connecting section, and in the direction from the first cylinder to the second cylinder, the cross-sectional area of ​​the connecting section gradually increases from the first area to the second area.

6. The ignition chamber of the semiconductor process equipment according to claim 5, characterized in that: The inner surface of the first cylinder and the inner surface of the second cylinder are both cylindrical side structures, and the inner surface of the connecting section is a truncated cone side structure.

7. The ignition chamber of the semiconductor process equipment according to claim 4, characterized in that: The first air intake pipeline and the second air intake pipeline are both connected to the end surface of the first cylinder, the exhaust pipeline is connected to the side wall of the first cylinder, and in the axial direction of the first cylinder, the distance between the exhaust pipeline and the end of the first cylinder where the first air intake pipeline is located is smaller than the distance between the exhaust pipeline and the end of the first cylinder away from the first air intake pipeline; The connecting pipeline and the purge pipeline are both connected to the end surface of the second cylinder, and in a direction perpendicular to the axial direction of the second cylinder, the connecting pipeline is located in the central area of ​​the second cylinder, and the purge pipeline is located outside the connecting pipeline.

8. A semiconductor process equipment, comprising a process chamber and an ignition chamber of the semiconductor process equipment according to any one of claims 1 to 7, wherein one end of the connecting pipe facing away from the combustion chamber is connected to the process chamber.

9. A control method, applied to the semiconductor process equipment according to claim 8, characterized in that: The control method comprises: Controlling the first air intake pipeline and the second air intake pipeline to be closed, and controlling the purge pipeline and the exhaust pipeline to be opened; After a preset time period, the purge pipeline and the exhaust pipeline are controlled to be closed; The first air intake line and the second air intake line are controlled to be open.

10. The control method according to claim 9, characterized in that: The controlling the first air intake line and the second air intake line to be both opened includes: Controlling the first air intake pipeline and the second air intake pipeline to be both opened, and controlling the purge pipeline to be closed when the flow rate of the combustible gas is less than or equal to a reference flow rate; Alternatively, both the first air intake pipeline and the second air intake pipeline are controlled to be opened, and when the flow rate of the combustible gas is greater than a reference flow rate, the purge pipeline is controlled to be opened.

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