Method, equipment and product for determining replacement model of electronic component

Abstract

The invention discloses an electronic component replacement model determination method, device and product, and the method comprises the steps: selecting at least two discrete characteristic parameters of a to-be-replaced electronic component, and setting a corresponding tolerance for each discrete characteristic parameter; setting a primary screening condition based on the tolerance, and carrying out primary screening on the candidate electronic components by utilizing the primary screening condition, namely, for one candidate electronic component, if all discrete characteristic parameters of the candidate electronic component meet the primary screening condition, reserving the candidate electronic component, otherwise, eliminating the candidate electronic component; for each candidate electronic component subjected to the primary screening condition, calculating a first similarity with the to-be-replaced electronic component by using a discrete parameter value corresponding to the discrete characteristic parameter; and determining a candidate electronic component which can finally replace the to-be-replaced electronic component based on the first similarity.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of electronic maintenance technology, and in particular to a method, device and product for determining a replacement model of an electronic component. Background Art

[0002] In the maintenance and repair of electronic equipment, diodes are basic and key components, and accurate identification of their models is an important prerequisite for ensuring the quality of repair. From the perspective of packaging type, small packaged diodes and glass tube packaged diodes are often difficult to clearly mark complete silk screen logos on their surfaces due to their small size. Even if there is a silk screen, it may become unclear or even disappear due to long-term use, environmental erosion, etc., which makes it difficult for maintenance technicians to quickly and accurately determine the specific model of the diode based on appearance alone on site.

[0003] When it is necessary to replace electronic components such as diodes, maintenance technicians are usually unable to accurately identify the diode model with the help of advanced tools; once the diode model is incorrectly identified, incorrect component replacement may ensue. This will not only cause the electronic equipment to be unable to restore normal performance, but may also cause circuit failures such as short circuits and open circuits, which may even threaten the operating safety of the equipment and the personal safety of the user in severe cases. Summary of the invention

[0004] The present invention provides a method, device and product for determining the replacement model of an electronic component, so as to achieve the purpose of effectively determining the replaceable model of the electronic component.

[0005] In a first aspect, an embodiment of the present invention provides a method for determining a replacement model of an electronic component, comprising: Selecting at least two discrete characteristic parameters of the electronic component to be replaced, and setting a corresponding tolerance for each of the discrete characteristic parameters; Setting a primary screening condition based on the tolerance, and using the primary screening condition to screen candidate electronic components, includes: For one of the candidate electronic components, if all of the discrete characteristic parameters of the candidate electronic component meet the primary screening condition, the candidate electronic component is retained; otherwise, the candidate electronic component is eliminated; For each candidate electronic component that passes the primary screening condition, calculating a first similarity with the electronic component to be replaced by using a discrete parameter value corresponding to the discrete feature parameter; A candidate electronic component that can eventually replace the electronic component to be replaced is determined based on the first similarity.

[0006] Optionally, setting a screening condition based on the tolerance includes: For one of the discrete feature parameters, the primary screening condition is set as: Based on one of the positive tolerance screening conditions, negative tolerance screening conditions, and bidirectional tolerance screening conditions respectively set corresponding to the positive tolerance, negative tolerance, and bidirectional tolerance in the tolerance.

[0007] Optionally, the electronic components to be replaced include non-silk-screen diodes; The discrete characteristic parameters include diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage; The diode forward voltage drop is configured to correspond to the bidirectional tolerance screening condition, the diode leakage current, diode junction capacitance, and diode reverse recovery time are configured to correspond to the negative tolerance screening condition, and the diode reverse breakdown voltage is configured to correspond to the forward tolerance screening condition.

[0008] Optionally, the positive tolerance screening condition is: ; The negative tolerance screening conditions are: ; The two-way tolerance screening conditions are: ; In the formula, represents the discrete parameter value of the discrete characteristic parameter corresponding to the candidate electronic component, The discrete parameter value representing the discrete characteristic parameter of the electronic component to be replaced, Indicates the tolerance of the corresponding discrete feature parameter.

[0009] Optionally, after the candidate electronic components are screened once using the primary screening condition, the method further includes: selecting at least two characteristic curves of the electronic components to be replaced; For the i-th characteristic curve, using the continuous parameter values ​​of the candidate electronic components that have been screened once and correspond to the characteristic curve, calculate the i-th continuous characteristic similarity; Calculate the second similarity using all continuous feature similarities and corresponding weights; A third similarity is calculated using the first similarity, the second similarity and the corresponding weights, and a candidate electronic component that can eventually replace the electronic component to be replaced is determined based on the third similarity.

[0010] Optionally, the electronic components to be replaced include non-silk-screen diodes; The characteristic curves include a diode forward voltage drop curve, a diode leakage current curve, and a diode junction capacitance curve; The continuous feature similarity corresponding to the diode forward voltage drop curve and the diode leakage current curve is the Pearson correlation coefficient; The continuous feature similarity corresponding to the diode junction capacitance curve is the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component.

[0011] Optionally, calculating the first similarity with the electronic component to be replaced by using the discrete parameter value corresponding to the discrete feature parameter includes: The first similarity is calculated using a weighted Euclidean calculation formula, where the weighted Euclidean calculation formula is: ; The formula used to calculate the first similarity is: ; In the formula, Indicates distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced, Represents the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic component.

[0012] Optionally, after calculating the distance, the method further includes: correcting the distance; The formula used to correct the distance is: ; The formula used to calculate the first similarity is: ; In the formula, represents the corrected distance, Represents the second weight corresponding to the i-th discrete feature parameter.

[0013] In a second aspect, an embodiment of the present invention further provides an electronic device, comprising at least one processor, and a memory communicatively connected to the at least one processor; The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute any one of the methods for determining a replacement model of an electronic component described in the embodiments of the present invention.

[0014] In a third aspect, an embodiment of the present invention further provides a computer program product, including a computer program, which, when executed by a processor, implements any one of the methods for determining a replacement model of an electronic component recorded in the embodiments of the present invention.

[0015] Compared with the prior art, the beneficial effect of the present invention is that: the present invention proposes a method for determining the replacement model of electronic components, in which at least two discrete characteristic parameters of the electronic components to be replaced are selected, and corresponding tolerances are set for each discrete characteristic parameter, a screening condition is set based on the tolerance, and the electronic components to be selected are screened once, so that candidate components that obviously do not meet the requirements can be quickly eliminated. When faced with a large number of potential replacement components, this preliminary screening mechanism can greatly reduce the workload of subsequent evaluations, saving time and energy.

[0016] By using the discrete parameter values ​​corresponding to the discrete characteristic parameters to calculate the first similarity with the electronic components to be replaced, the matching degree between the candidate components and the original components can be accurately evaluated from a quantitative perspective. This ensures that the final selected replacement components are highly similar to the original components in performance, thus ensuring the normal operation of the equipment to the greatest extent and reducing the risk of equipment failure due to performance mismatch of the replacement components. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 4 is a flow chart of a method for determining a replacement model of an electronic component in an embodiment.

[0018] Figure 2 It is a flow chart of another method for determining the replacement model of an electronic component in an embodiment.

[0019] Figure 3 Schematic diagram of the structure of an electronic device in an embodiment. DETAILED DESCRIPTION

[0020] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0021] Embodiment 1: Figure 1 is a flow chart of the method for determining the replacement model of electronic components in the embodiment, refer to Figure 1 , methods include: S101. Select at least two discrete characteristic parameters of the electronic component to be replaced, and set a corresponding tolerance for each discrete characteristic parameter.

[0022] Exemplarily, in this solution, the electronic components to be replaced are set as electronic components without silk screen markings, and different types of electronic components may include different characteristic parameters. The characteristic parameters are used to describe the electrical performance of the electronic components, for example, the characteristic parameters may include voltage characteristics, current characteristics, resistance characteristics, etc.

[0023] For example, in this solution, discrete characteristic parameters are used to accurately quantify characteristic parameters. For example, the voltage characteristics of a diode can be specifically quantified by discrete characteristic parameters such as forward voltage drop and breakdown voltage; the current characteristics can be reflected by discrete characteristic parameters such as reverse leakage current.

[0024] Exemplarily, in this solution, the specific numerical values ​​of the discrete characteristic parameters of the electronic components to be replaced can be obtained by measuring circuits, measuring instruments, etc.

[0025] Exemplarily, in this embodiment, the tolerance represents the allowable deviation between the values ​​of the discrete characteristic parameters of the electronic component to be replaced and the discrete characteristic parameters of the candidate electronic component. The tolerances corresponding to different discrete characteristic parameters may be different, and the tolerance corresponding to the same discrete characteristic parameter may include positive deviation and negative deviation.

[0026] For example, for a certain electronic component, for a certain discrete characteristic parameter therein, the corresponding tolerance may be ±5%, where a deviation greater than zero is a positive deviation, and a deviation less than zero is a negative deviation.

[0027] For example, in this solution, for a discrete characteristic parameter of a certain electronic component, the tolerance range is determined by referring to relevant industry standards, circuit design manuals, and previous design experience. At the same time, the tolerance range can also be optimized and verified by means of circuit simulation, experimental testing, etc.

[0028] S102. Setting a primary screening condition based on the tolerance, and performing a primary screening on the candidate electronic components using the primary screening condition.

[0029] In this solution, for a candidate electronic component, if all discrete characteristic parameters of the candidate electronic component meet a screening condition, the candidate electronic component is retained, otherwise the candidate electronic component is eliminated.

[0030] Exemplarily, in this solution, a primary screening condition can be used to determine whether a discrete characteristic parameter of a candidate electronic component is within a set tolerance (interval) with the same discrete characteristic parameter of the electronic component to be replaced. If so, the candidate electronic component can be retained; otherwise, the candidate electronic component is eliminated.

[0031] For example, the discrete characteristic parameters of the electronic components to be replaced are set to include resistance, capacitance and inductance. If the nominal value of the resistance of the electronic components to be replaced is R0, and the tolerance of the resistance is ±5%; the nominal value of the capacitance is C0, and the tolerance is ±10%; the nominal value of the inductance is L0, and the tolerance is ±8%. Then the primary screening condition can be: The resistance R of the candidate electronic components satisfies 0.95R0≤R≤1.05R0; the capacitance C satisfies 0.9C0≤C≤1.1C0; and the inductance L satisfies 0.92L0≤L≤1.08L0.

[0032] For another example, collect a large amount of discrete characteristic parameter data of normally working electronic components of the same type as the electronic components to be replaced, and analyze the statistical distribution of these data, such as obtaining the mean μR and standard deviation σR of the resistance value, the mean μC and standard deviation σC of the capacitance value, and the mean μL and standard deviation σL of the inductance value. Centered on the mean value, take ±3σ as the tolerance range. Then the primary screening condition can be: The resistance R of the candidate electronic components satisfies μR−3σR≤R≤μR+3σR; the capacitance C satisfies μC−3σC≤C≤μC+3σC; and the inductance L satisfies μL−3σL≤L≤μL+3σL.

[0033] Exemplarily, in this scheme, a candidate electronic component database can be established, and the database can be set to store the types, models, discrete feature parameters and their corresponding values ​​of the candidate electronic components, as well as other specified types of information. The information of all candidate electronic components of the same type as the electronic components to be replaced can be set to be read from the database, thereby completing a screening in step S102.

[0034] S103. For each candidate electronic component that has passed the first screening condition, a first similarity with the electronic component to be replaced is calculated using a discrete parameter value corresponding to the discrete feature parameter.

[0035] Exemplarily, in this solution, the first similarity represents the similarity between the candidate electronic component and the electronic component to be replaced, and it is assumed that the greater the first similarity is, the higher the similarity between the two is.

[0036] Illustratively, in this solution, there is no limitation on the method for calculating the first similarity, which can be determined according to a preset similarity calculation formula.

[0037] For example, assuming that the electronic component to be replaced has a resistance value Rtarget and a capacitance Ctarget, its discrete feature parameter vector is Xtarget=(Rtarget, Ctarget). For a candidate electronic component, its discrete feature parameter vector is Xcandidate=(Rcandidate, Ccandidate). The distance d between Xtarget and Xcandidat can be calculated using the Euclidean distance formula.

[0038] Calculate the first similarity , =1 / (1+d), where the closer the value of S is to 1, the more similar the candidate electronic component is to the electronic component to be replaced.

[0039] For another example, assume that the electronic component to be replaced has a forward voltage drop VF and a reverse leakage current IR as discrete characteristic parameters. The parameters of the electronic component to be replaced are VFtarget and IRtarget, forming a vector Ytarget=(Vftarget, IRtarget); set the parameters of the electronic component to be replaced to VFcandidate and IRcandidate, forming a vector Ycandidate=(Vfcandidate, IRcandidate), and the first similarity can be calculated using the cosine similarity formula , where the cosine similarity formula is: .

[0040] The value range of the first similarity is between -1 and 1, and the closer to 1 it is, the more similar the candidate electronic component is to the electronic component to be replaced.

[0041] S104. Determine, based on the first similarity, a candidate electronic component that can eventually replace the electronic component to be replaced.

[0042] Exemplarily, in this solution, the first similarities of different candidate electronic components may be sorted in descending order, and the first N (highest similarity) candidate electronic components may be selected as alternatives that may replace the electronic component to be replaced.

[0043] This embodiment proposes a method for determining the replacement model of an electronic component, in which at least two discrete characteristic parameters of the electronic component to be replaced are selected, and a corresponding tolerance is set for each discrete characteristic parameter, a screening condition is set based on the tolerance, and the electronic components to be selected are screened, so that candidate components that obviously do not meet the requirements can be quickly eliminated. When faced with a large number of potential replacement components, this preliminary screening mechanism can greatly reduce the workload of subsequent evaluations, saving time and energy.

[0044] By using the discrete parameter values ​​corresponding to the discrete characteristic parameters to calculate the first similarity with the electronic components to be replaced, the matching degree between the candidate components and the original components can be accurately evaluated from a quantitative perspective. This ensures that the final selected replacement components are highly similar to the original components in performance, thus ensuring the normal operation of the equipment to the greatest extent and reducing the risk of equipment failure due to performance mismatch of the replacement components.

[0045] Based on the above solution, in one possible implementation scheme, setting a screening condition based on tolerance includes: For a discrete feature parameter, set a screening condition as: One of the positive tolerance filtering condition, negative tolerance filtering condition, and bidirectional tolerance filtering condition set based on the positive tolerance, negative tolerance, and bidirectional tolerance in the corresponding tolerance.

[0046] Exemplarily, in this solution, taking the discrete characteristic parameter as the rated voltage as an example, it is assumed that the rated voltage of the electronic component to be replaced is Vtest, the rated voltage of the candidate electronic component is Vdb, and the tolerance is ±5%.

[0047] The positive tolerance screening condition may be (for example, in a circuit that requires an upper limit on the capacitor voltage) as follows: only candidates with Vdb ≤ VtestA (1+5%) are retained.

[0048] The negative tolerance screening condition can be (when there is a requirement for the lower limit of the capacitor's withstand voltage): only candidates with Vdb ≥ VtestA (1-5%) are retained.

[0049] The bidirectional tolerance screening condition can be (when the circuit has high requirements on the capacitor rated voltage accuracy): retain candidates with |Vdb−Vtest|≤VtestA5%.

[0050] In this solution, a positive tolerance screening condition is set based on a positive tolerance setting in the tolerance, an upper limit value for a specified discrete feature parameter is calculated based on the positive tolerance, and candidate electronic components that do not exceed the upper limit value are screened out through the positive tolerance screening condition.

[0051] For example, in this solution, the positive tolerance screening condition is mainly used in scenarios where the upper limit of the discrete characteristic parameter is strictly required. For example, if the discrete characteristic parameter of the candidate electronic component exceeds a certain upper limit, it may cause the circuit performance to degrade or even be damaged, and positive tolerance screening is required at this time.

[0052] In this solution, a negative tolerance screening condition is set based on a negative tolerance setting in the tolerance, a lower limit value for a specified discrete feature parameter is calculated based on the negative tolerance, and candidate electronic components greater than the lower limit value are screened out through the negative tolerance screening condition.

[0053] For example, in this solution, the negative tolerance screening condition is applicable to the case where there is a clear requirement for the lower limit of the discrete characteristic parameter. If the discrete characteristic parameter of the candidate electronic component is lower than a certain lower limit value, it may not meet the basic functional requirements of the circuit, and negative tolerance screening should be used.

[0054] In this solution, the bidirectional tolerance screening condition is set based on the tolerance interval setting, the fluctuation range of the discrete characteristic parameters is calculated based on the boundary value of the tolerance, and the candidate electronic components that meet the accuracy requirements are screened out through the bidirectional tolerance screening condition.

[0055] For example, in this solution, the bidirectional tolerance screening condition is suitable for use in scenarios where the accuracy requirements for candidate electronic components are high and the discrete characteristic parameters are required to be strictly within a certain range, such as in precision measurement circuits and some circuits with extremely high signal stability requirements.

[0056] In this solution, positive, negative, and bidirectional tolerance screening conditions are set according to actual needs to screen a specified discrete feature parameter, which can meet these diverse needs in a targeted manner. At the same time, among a large number of candidate electronic components, it will take a lot of time and effort to test and judge whether each component is suitable for the circuit. Setting these tolerance-based screening conditions can quickly exclude components that do not meet the conditions, greatly improving screening efficiency and reducing unnecessary workload.

[0057] Based on the aforementioned solution that the primary screening condition includes a positive tolerance screening condition, a negative tolerance screening condition, and a bidirectional tolerance screening condition, in one feasible implementation, the electronic component to be replaced includes a non-silkscreen diode.

[0058] In this solution, discrete characteristic parameters are set including diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage.

[0059] In this solution, the diode forward voltage drop is configured to correspond to the bidirectional tolerance screening condition, the diode leakage current, diode junction capacitance, and diode reverse recovery time are configured to correspond to the negative tolerance screening condition, and the diode reverse breakdown voltage is configured to correspond to the forward tolerance screening condition.

[0060] Exemplarily, in this solution, the forward voltage drop means that when the diode is in a forward conduction state, the current flows from the anode to the cathode, and the voltage difference generated between the anode and the cathode at this time is the forward voltage drop.

[0061] Exemplarily, in this solution, the leakage current refers to a very small current flowing from the cathode to the anode when the diode is in a reverse bias state.

[0062] Exemplarily, in this solution, the junction capacitance indicates that the PN junction of the diode exhibits capacitance characteristics under different bias voltages.

[0063] Exemplarily, in this solution, the reverse recovery time refers to the time required to restore the diode to the reverse cutoff state when the diode suddenly switches from the forward conduction state to the reverse cutoff state because the charge stored in the PN junction cannot disappear instantly.

[0064] Exemplarily, in this solution, the reverse breakdown voltage refers to the voltage at which the reverse current increases sharply and the diode loses its unidirectional conductivity when the reverse bias voltage of the diode gradually increases to a certain value.

[0065] For example, in this solution, the forward voltage drop of the diode should not be too large or too small in different circuit applications. If the forward voltage drop is too large, it will increase the power consumption of the circuit and reduce the power utilization efficiency; if it is too small, it may not meet the conditions for the normal conduction of the diode, affecting the circuit function. Therefore, a bidirectional tolerance screening condition is set to ensure that the forward voltage drop is within a suitable range to meet the precise requirements of the circuit for its performance.

[0066] Exemplarily, in this solution, the smaller the values ​​of parameters such as diode leakage current, diode junction capacitance, and diode reverse recovery time in the circuit, the more beneficial it is to the circuit performance.

[0067] If the leakage current is too large, it will increase the power consumption of the circuit and interfere with signal transmission, especially in circuits with high requirements on power consumption and signal accuracy, such as battery-powered low-power circuits and precision signal detection circuits. If the diode junction capacitance is too large, it will affect the switching speed and signal transmission of the diode in high-frequency circuits, resulting in signal distortion and delay. If the reverse recovery time is too long, in high-speed switching circuits such as switching power supplies and high-frequency rectification, it will increase switching losses, reduce efficiency, and even cause circuit oscillation.

[0068] Therefore, in order to ensure circuit performance, it is hoped that these parameters do not exceed a certain upper limit, so negative tolerance screening conditions are used.

[0069] Exemplarily, in this solution, the reverse breakdown voltage of a diode is the reverse voltage limit it can withstand. In circuit design, in order to ensure that the diode is not damaged by breakdown when reverse biased, while fully utilizing its voltage resistance, it is necessary to select a diode with a reverse breakdown voltage greater than the reverse voltage that may occur in the actual circuit. However, an excessively high reverse breakdown voltage may increase the cost of the diode and reduce some performance indicators.

[0070] Therefore, the forward tolerance screening condition is adopted to ensure that the reverse breakdown voltage of the candidate diode meets the circuit requirements while not exceeding the actual needs, so as to balance the cost and performance.

[0071] Further, based on the above-mentioned solution of configuring the diode forward voltage drop to correspond to the bidirectional tolerance screening condition, configuring the diode leakage current, the diode junction capacitance, and the diode reverse recovery time to correspond to the negative tolerance screening condition, and configuring the diode reverse breakdown voltage to correspond to the forward tolerance screening condition, in one feasible implementation method, the forward tolerance screening condition is: ; The negative tolerance filter conditions are: ; The two-way tolerance filter conditions are: .

[0072] In the formula, The discrete parameter values ​​representing the discrete characteristic parameters of the corresponding candidate electronic components, The discrete parameter value representing the discrete characteristic parameter of the electronic component to be replaced, Indicates the tolerance of the corresponding discrete feature parameter.

[0073] Exemplarily, in this solution, the forward voltage drop of the diode to be replaced is VFtest, and the tolerance is TVF. For the forward voltage drop VFdb of the candidate diode, the screening condition is |VFdb−VFtest|≤VFtest×TVF.

[0074] Exemplarily, in this solution, the leakage current of the diode to be replaced is IRtest, and the tolerance is TIR. For the leakage current IRdb of the candidate diode, the screening condition is IRdb≤IRtest×(1+TIR).

[0075] Exemplarily, in this solution, the junction capacitance of the diode to be replaced is CJtest, and the tolerance is TCJ. For the junction capacitance CJdb of the candidate diode, the screening condition is CJdb≤CJtest×(1+TCJ).

[0076] Exemplarily, in this solution, the reverse recovery time of the diode to be replaced is trrtest, and the tolerance is Ttrr. For the reverse recovery time trrdb of the candidate diode, the screening condition is trrdb≤trrtest×(1+Ttrr).

[0077] Exemplarily, in this solution, the reverse breakdown voltage of the diode to be replaced is VBRtest, and the tolerance is TVBR. For the reverse breakdown voltage VBRdb of the candidate diode, the screening condition is VBRdb≥VBRtest×(1-TVBR).

[0078] Based on any of the above solutions, in one possible implementation method, after the candidate electronic components are screened once using the primary screening conditions, the method further includes: At least two characteristic curves of the electronic components to be replaced are selected.

[0079] For the i-th characteristic curve, the i-th continuous characteristic similarity is calculated using the continuous parameter values ​​of the candidate electronic components that have been screened once and correspond to the characteristic curve. The second similarity is calculated using all the continuous characteristic similarities and the corresponding weights.

[0080] A third similarity is calculated using the first similarity, the second similarity and the corresponding weights, and a candidate electronic component that can ultimately replace the electronic component to be replaced is determined based on the third similarity.

[0081] For example, in this solution, the characteristic curve is used to describe the continuous variable of a certain performance index of the electronic component under different working conditions. The characteristic curve can be used to show the performance change trend of the electronic component under different working conditions.

[0082] For example, for a diode, the characteristic curve may include: a forward IV curve, where the changing relationship between the forward voltage and the forward current can determine the forward conduction performance of the diode; and a reverse IV curve, where the changes in the reverse voltage and the reverse current can reflect the reverse cutoff characteristics and the pre-breakdown state of the diode.

[0083] Exemplarily, in this embodiment, the values ​​of the sampling points in the characteristic curve are used as continuous parameter values. For example, for the forward IV curve, the continuous parameter value may be the forward current and / or the forward voltage, and for the reverse IV curve, the continuous parameter value may be the reverse current and / or the reverse voltage.

[0084] Exemplarily, in this solution, the continuous parameter values ​​corresponding to the characteristic curve of the candidate electronic components after the first screening are used to calculate the i-th continuous feature similarity, which can be: For a characteristic curve, the similarity between the characteristic curve of the candidate electronic component and the characteristic curve of the electronic component to be replaced is calculated. In this solution, the method for calculating the similarity of the characteristic curves is not limited. For example, the calculated Euclidean distance, cosine similarity, Pearson correlation coefficient, mean square error and other results can be used to characterize the similarity between the two characteristic curves.

[0085] For example, for the reverse IV curve, it is assumed that the candidate electronic component has reverse current IRcandidate and reverse voltage VRcandidate data at m measurement points, and the diode to be replaced has reverse current IRtarget and reverse voltage VRtarget data at m measurement points.

[0086] Calculate the reverse current mean absolute error MAEIR: ; Calculate the reverse voltage mean absolute error MAEVR: ; Then the continuous feature similarity SIR of this item can be: .

[0087] In the formula, , is the weight.

[0088] Exemplarily, in this solution, an electronic component to be replaced includes multiple characteristic curves, and the continuous characteristic similarities corresponding to all characteristic curves are weightedly summed to obtain a second similarity, and then the first similarity and the second similarity are weightedly summed to obtain a third similarity.

[0089] In this scheme, the similarity between the electronic components to be replaced and the candidate electronic components is determined based on the discrete characteristic parameters and characteristic curves of the electronic components, which can better match the performance of the components to be replaced, thereby ensuring that the circuit can maintain a stable and good working state after replacement, maintain or even improve the overall performance of the circuit, and reduce performance fluctuations and uncertainties caused by component replacement.

[0090] Based on the above method further comprising a solution of determining a second similarity, in one possible implementation manner, the electronic component to be replaced comprises a non-silk-screen diode.

[0091] In this solution, the characteristic curves include a diode forward voltage drop curve, a diode leakage current curve, and a diode junction capacitance curve.

[0092] In this scheme, the continuous feature similarity corresponding to the diode forward voltage drop curve and the diode leakage current curve is the Pearson correlation coefficient; the continuous feature similarity corresponding to the diode junction capacitance curve is the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component.

[0093] Based on any of the above solutions, in one possible implementation, using discrete parameter values ​​corresponding to discrete feature parameters to calculate the first similarity with the electronic component to be replaced includes: The first similarity is calculated using the weighted Euclidean calculation formula, which is: ; The formula used to calculate the first similarity is: .

[0094] In the formula, Indicates distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced, Represents the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic component.

[0095] In this solution, a weighted Euclidean calculation formula is used to calculate the first similarity. When measuring the similarity between the candidate electronic component and the electronic component to be replaced, the importance difference of different discrete feature parameters is taken into account, and a more accurate evaluation is achieved by assigning different weights.

[0096] Based on the above solution of using the weighted Euclidean calculation formula to calculate the first similarity, in one possible implementation scheme, after calculating the distance, the method further includes: correcting the distance; The formula used to correct the distance is: ; The formula used to calculate the first similarity is: .

[0097] In the formula, represents the corrected distance, Represents the second weight corresponding to the i-th discrete feature parameter.

[0098] In this solution, the purpose of correcting the distance is to increase the discreteness penalty for the case where the discrete parameter values ​​are greatly different. By increasing the discreteness penalty, it is possible to effectively distinguish those electronic components that are apparently close in distance but have significant differences in actual parameters. In the large-scale screening of candidate components, it is possible to avoid the misselection of electronic components whose parameters seem to be similar but whose key parameters have large discreteness due to simple distance calculation.

[0099] Figure 2 is another flow chart of a method for determining a replacement model of an electronic component in an embodiment, refer to Figure 2 Based on any of the foregoing solutions, in one possible implementation, the method includes: S201. Select at least two discrete characteristic parameters of the electronic component to be replaced, and set a corresponding tolerance for each discrete characteristic parameter.

[0100] In this solution, the electronic component to be replaced is set as a small-package diode without silk-screen printing, and the method is suitable for the selection of replaceable devices for the small-package diode without silk-screen printing.

[0101] In this solution, the discrete characteristic parameters of the electronic components to be replaced are set to include diode forward voltage drop VF, diode leakage current IR, diode junction capacitance CJ, diode reverse recovery time TRR, and diode reverse breakdown voltage VBR.

[0102] In this scheme, the tolerance intervals of VF, IR, CJ, TRR, and VBR are set to ±5%, ±10%, ±8, ±10%, and ±5%, respectively.

[0103] In this solution, the discrete parameter values ​​corresponding to each discrete characteristic parameter are determined by measurement. Specifically, the discrete parameter values ​​of each discrete characteristic parameter of the electronic component to be replaced are measured and determined by common laboratory tools (such as a DC source, a multimeter, an oscilloscope, a signal generator, and a bridge, etc.).

[0104] The method for measuring VF includes: measuring the voltage value of the diode to be replaced by a digital multimeter under a specified current, which is the forward voltage drop of the diode.

[0105] The IR measurement method includes: applying a specified reverse voltage to the diode to be replaced, and measuring the current passing through the diode to be replaced by a digital multimeter, which is the diode leakage current.

[0106] The CJ measurement method includes: using the AC bridge balance principle, comparing the junction capacitance of the diode to be replaced with a known standard capacitance, and when the bridge reaches a balance, calculating the value of the diode junction capacitance.

[0107] TRR measurement methods include: Construct a test circuit and connect the signal generator to the positive electrode of the diode to be replaced through a current limiting resistor. The current limiting resistor R is 470Ω, which is estimated based on the junction capacitance to ensure that the circuit current is within a safe and appropriate range during the test and to avoid damage to the diode to be replaced due to excessive current.

[0108] The cathode of the diode to be replaced is directly connected to ground, forming a complete current loop.

[0109] Connect the current probe in series in the circuit and ensure that the direction of the current probe is strictly consistent with the direction of current flow, so as to accurately measure the current value in the circuit. The current probe should be of a bandwidth ≥ 100MHz, and demagnetization and zero calibration should be performed before use to ensure the accuracy of the measurement.

[0110] The initial range is set to 50mA / div. During the actual test, the range can be flexibly adjusted according to the measured IRmax (maximum reverse current), and AC coupling is used to effectively isolate the DC component and capture the AC current signal more clearly.

[0111] Connect a voltage probe across the diode to measure the voltage change across the diode to be replaced.

[0112] The signal generator outputs a square wave signal, and its frequency is set to the estimated frequency. The estimated frequency needs to be estimated in advance based on the characteristics of the diode to be replaced and actual test experience to ensure that the reverse recovery characteristics of the diode to be replaced can be effectively stimulated during the test.

[0113] The amplitude of the square wave signal is set to ±5V, which can not only meet the requirements of forward conduction and reverse cutoff of the diode to be replaced, but also perform performance testing of the diode to be replaced within a safe range.

[0114] The duty cycle is set to 50% to ensure that the forward conduction time and the reverse cutoff time are equal, which is conducive to accurately observing and analyzing the performance changes of the diode to be replaced under different conditions.

[0115] Set the rise / fall time of the signal generator to the minimum value (<10ns) to simulate fast signal changes and more realistically reflect the reverse recovery characteristics of the diode to be replaced under high-speed switching conditions.

[0116] For the diodes to be replaced with a reverse recovery time trr (estimated) <50ns, the oscilloscope bandwidth should be set to ≥500MHz. This is because a shorter reverse recovery time means a higher signal change frequency, and a high-bandwidth oscilloscope is required to accurately capture and display signal details.

[0117] When 50ns≤trr(estimated)<200ns, the oscilloscope bandwidth is set to ≥200MHz. Within this reverse recovery time range, a moderate bandwidth can meet the requirements for effective signal measurement and analysis.

[0118] If trr (estimated) ≥ 200ns, the oscilloscope bandwidth should be set to ≥ 100MHz. For diodes with long reverse recovery times, a relatively low bandwidth can meet the measurement requirements while avoiding excessive noise interference caused by excessive bandwidth.

[0119] When trr (estimated) < 100ns, the oscilloscope sampling rate is set to ≥ 5GS / s. A high sampling rate can sample fast-changing signals more accurately, ensuring that every detail of the signal is captured, thereby accurately measuring the reverse recovery time.

[0120] For the case of 100ns≤trr(estimated)<1μs, the sampling rate is set to ≥2GS / s. Within this reverse recovery time range, an appropriate sampling rate can improve test efficiency while ensuring measurement accuracy.

[0121] If trr (estimated) ≥ 1μs, the sampling rate should be set ≥ 1GS / s. In this case, a lower sampling rate can meet the measurement requirements for slowly changing signals and reduce the pressure on the oscilloscope hardware performance.

[0122] Before the formal test, short-circuit the replacement diode and send a standard square wave signal (rise time <1ns) to the test circuit. Use an oscilloscope to measure the waveforms of the voltage channel and the current channel at the same time, and record the time difference Δt of the falling edges of the two channels. This time difference is used as the system delay compensation value. This compensation mechanism is used to eliminate the influence of the delay of the test system itself on the measurement results.

[0123] The formal test begins by applying a forward voltage through a signal generator to turn on the diode to be replaced. At this time, record the forward current. Ideally, the forward current should be stable at around 10mA. If the forward current deviation is too large, check whether the test circuit connection and the performance of the diode to be replaced are normal.

[0124] When the signal generator outputs -5V, the diode enters the reverse bias state. At this time, the oscilloscope quickly captures the current waveform and accurately marks t0 (the moment when the current starts to decrease from 90%IFmax) and t2 (the moment when the current drops to 10% of the reverse peak value).

[0125] By calculating trrc=t2-t0, the measured reverse recovery time of the diode to be replaced can be obtained. Diode reverse recovery time TRR=trrc-Δt.

[0126] To ensure the accuracy and reliability of the test results, the above test steps need to be repeated at least 5 times. After each test, the measured trrc values ​​are recorded and analyzed. If the multiple measurement results are very different, it is necessary to check whether there are interference factors or equipment failures during the test process.

[0127] During the test, monitor the maximum reverse current IRmax in the circuit in real time. If IRmax>100mA, stop measuring immediately. Excessive reverse current may cause the diode to be replaced to overheat and damage, or even cause the test equipment to malfunction, so overcurrent protection is an important measure to ensure test safety.

[0128] Pay close attention to the temperature change of the diode to be replaced. When the temperature rise is >10°C, stop the test. Too high a temperature of the diode to be replaced will affect its performance, resulting in inaccurate measurement results, and may also cause irreversible damage to the diode to be replaced.

[0129] Carefully observe the current waveform displayed by the oscilloscope. If ringing occurs or the current noise exceeds 20% of IRmax, stop measuring. An abnormal waveform may mean that there is interference in the test circuit, unstable component performance, or unreasonable test equipment settings. At this time, continuing to measure will not give an accurate reverse recovery time.

[0130] VBR measurement methods include: Construct a test circuit, connect the positive pole of the power supply to the anode of the diode to be replaced through a current limiting resistor, and directly ground the negative pole of the power supply. The role of the current limiting resistor is crucial. It can effectively limit the current in the circuit and prevent excessive current during the reverse breakdown of the diode to be replaced, thereby protecting the diode to be replaced and the power supply equipment from damage. When selecting a current limiting resistor, its resistance value must be determined based on factors such as the power supply voltage, the estimated reverse breakdown current of the diode to be replaced, and the safety requirements of the circuit.

[0131] Ensure that the connection of the test circuit is firm and reliable, and avoid false connection, short circuit, etc., to ensure the stability of the test process and the accuracy of the measurement results.

[0132] Determine the type of diode to be replaced: Accurately determine the type of diode based on the diode forward voltage drop VF (@10mA) obtained in the previous measurement, and then determine the corresponding test parameters.

[0133] If the measured VF is in the range of 0.6-0.7V, the diode is judged to be a common small signal diode. For this type of diode, the current threshold is set to 1mA, the relative current change rate threshold is set to 1μA / V, and the temperature threshold is set to 50℃.

[0134] If VF is less than 0.4V, the diode is a Schottky diode. For Schottky diodes, the current threshold is set to 0.5mA, the relative current change rate threshold is set to 2μA / V, and the temperature threshold is set to 60℃.

[0135] Apply a 5V reverse voltage to the diode, and use a high-precision current measuring instrument (such as a microammeter or a multimeter with a high-sensitivity current measurement function) to record the initial leakage current IR0 at this time. Then, calculate the relative current threshold by the formula, that is, relative current threshold = IR0 × 100. If the calculated relative current threshold is less than 0.1μA, the relative current threshold is taken as 10μA. At the same time, it is necessary to confirm that the relative current threshold does not exceed the corresponding absolute current threshold (1mA for ordinary small signal diodes and 0.5mA for Schottky diodes).

[0136] To perform a step-by-step test: Phase 1 (0-30V): In this phase, the reverse voltage applied to the two ends of the diode to be replaced is gradually increased at a voltage step of 1V / step. After each step of voltage increase, a waiting time of 2 seconds is maintained to allow the diode to fully adapt to the voltage change and reach a stable working state. After the waiting time is over, the current IR and the temperature T of the diode at this time are accurately recorded using the corresponding measuring instrument, and the current change rate S = ΔIR / ΔV is calculated. Among them, ΔIR is the difference between the current value of the current step and the previous step, and ΔV is the voltage step value (1V).

[0137] Phase 2 (30-100V): When the voltage reaches 30V, the second phase of the test begins. In this phase, the voltage step is adjusted to 2V / step, and the waiting time for each step is extended to 3 seconds. Similarly, after each waiting time, the current IR and temperature T are recorded, and the current change rate S is calculated. As the voltage increases, the reverse characteristics of the diode gradually emerge. Properly increasing the voltage step and waiting time can more efficiently capture its performance changes while ensuring the accuracy of the measurement.

[0138] Stage 3 (>100V): When the voltage exceeds 100V, it enters the third stage. At this time, the voltage step is set to 5V / step, and the waiting time is further extended to 5 seconds. Continue to record the current IR, temperature T, and calculate the current change rate S according to the above method. In the high voltage area, the reverse breakdown characteristics of the diode are more significant. Larger voltage steps and longer waiting times help to quickly determine the approximate range of the reverse breakdown voltage while ensuring the stability of the measurement process.

[0139] During the entire test process, the current IR in the circuit is monitored in real time. If IR exceeds the absolute current threshold set for the type of diode to be replaced (=1mA for ordinary small signal diodes and 0.5mA for Schottky diodes), the measurement is stopped immediately. Excessive current may cause the diode to overheat and be damaged, or even cause test equipment failure, so this is a key protection mechanism to ensure test safety and equipment integrity.

[0140] The current change rate S is continuously calculated and compared with the relative current change rate threshold of the corresponding diode type (1μA / V for ordinary small signal diodes and 2μA / V for Schottky diodes). Once S exceeds the threshold, it indicates that the current change of the diode is abnormal and may have entered the unstable area of ​​reverse breakdown. At this time, the measurement should be stopped to avoid inaccurate measurement results and possible damage to the diode.

[0141] Pay close attention to the changes in the temperature T of the diode. When T exceeds the temperature threshold set for the corresponding diode type (50°C for ordinary small signal diodes and 60°C for Schottky diodes), stop measuring. Excessive temperature will affect the performance of the diode, resulting in inaccurate measurement results, and may cause irreversible thermal damage to the diode.

[0142] Record the voltage value when the measurement stops: When the test process stops due to any of the above stop conditions, accurately record the voltage value Vstop applied to both ends of the diode at this time. This voltage value is a key data point for judging the reverse breakdown characteristics of the diode.

[0143] Depending on the diode type previously determined, different calculation methods are used to determine the reverse breakdown voltage VBR.

[0144] For ordinary small signal diodes, the reverse breakdown voltage is calculated by the formula VBR = Vstop × 0.9. This calculation method is an empirical formula derived from a large amount of experimental data and theoretical analysis. Considering the change law of the characteristic curve of ordinary small signal diodes when approaching reverse breakdown, multiplying by 0.9 can more accurately deduce its actual reverse breakdown voltage.

[0145] For Schottky diodes, the reverse breakdown voltage is calculated using the formula VBR = Vstop × 0.85. Schottky diodes have unique structures and electrical characteristics, and their reverse breakdown characteristics are different from those of ordinary small-signal diodes. After experimental verification and data analysis, multiplying by 0.85 can better match the actual reverse breakdown voltage of Schottky diodes.

[0146] S202. Setting a primary screening condition based on the tolerance, and performing a primary screening on the candidate electronic components using the primary screening condition.

[0147] In this solution, the diode forward voltage drop is set to correspond to the bidirectional tolerance screening condition, the diode leakage current, diode junction capacitance, and diode reverse recovery time are configured to correspond to the negative tolerance screening condition, and the diode reverse breakdown voltage is configured to correspond to the forward tolerance screening condition.

[0148] In this solution, if the tolerance of the diode forward voltage drop TVF is 5%, the screening condition for the forward voltage drop VFdb of the candidate diode is |VFdb−VF|≤VF×5%.

[0149] In this solution, if the tolerance TIR of the diode leakage current is -2%, the screening condition for the leakage current IRdb of the candidate diode is IRdb≤IR×(1-2%).

[0150] Exemplarily, in this solution, if the tolerance TCJ of the diode junction capacitance is 1%, for the junction capacitance CJdb of the candidate diode, the screening condition is CJdb≤CJ×(1+1%).

[0151] For example, in this solution, if the tolerance Ttrr of the diode reverse recovery time is -10%, for the reverse recovery time trrdb of the candidate diode, the screening condition is trrdb≤TRR×(1−10%).

[0152] For example, in this solution, if the tolerance TVBR of the reverse breakdown voltage of the diode is 5%, for the reverse breakdown voltage VBRdb of the candidate diode, the screening condition is VBRdb≥VBR×(1-5%).

[0153] S203. For each candidate electronic component that has passed the first screening condition, a first similarity with the electronic component to be replaced is calculated using a discrete parameter value corresponding to the discrete feature parameter.

[0154] In this solution, the weighted Euclidean distance formula is used to calculate the first similarity, and the formula used includes: ; ; .

[0155] In the formula, For the first similarity, set the weights of VF, IR, CJ, TRR, and VBR They are 0.25, 0.15, 0.15, 0.2, and 0.25 respectively. represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced, Indicates the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic component, and sets the weights corresponding to VF, IR, CJ, TRR, and VBR They are 0.01, 0.02, 0.02, 0.01 and 0.05 respectively.

[0156] In this scheme, and are the normalized discrete parameter values ​​(VF, IR, CJ, TRR, VBR of the diode to be replaced and the candidate diode, respectively). The specific method of normalization is: .

[0157] In the formula, represents a discrete parameter value in a candidate or replacement diode, represents the normalized value of the corresponding candidate or replacement diode, Identify the minimum of the corresponding discrete parameter values ​​among the candidate diodes, The maximum value of the corresponding discrete parameter value among the candidate diodes.

[0158] In this step, the top 10 candidate diodes with the highest first similarity are retained.

[0159] S204. Select at least two characteristic curves of the electronic components to be replaced; for the i-th characteristic curve, use the continuous parameter values ​​corresponding to the characteristic curve of the candidate electronic components after the first screening to calculate the i-th continuous characteristic similarity; use all the continuous feature similarities and corresponding weights to calculate the second similarity.

[0160] In this solution, the characteristic curves are set to include a diode forward voltage drop curve, a diode leakage current curve, and a diode junction capacitance curve. The characteristic curve of the diode to be replaced is measured and determined by using common laboratory tools (such as a DC source, a multimeter, an oscilloscope, a signal generator, and a bridge, etc.).

[0161] In this solution, the method for measuring the diode forward voltage drop curve of the diode to be replaced includes: Connect the diode to be replaced to the circuit of power supply and current source in the forward direction, connect the voltmeter to measure the forward voltage drop across the diode, and place the thermometer close to the diode to accurately measure its temperature.

[0162] Record the initial temperature T0. Set the initial current value of the current source to 0 mA.

[0163] When the current value is less than 10mA, the current value of the current source is increased in steps of 1mA; when the current value is greater than or equal to 10mA, the current value is increased in steps of 5mA.

[0164] After each current adjustment, wait for 3 seconds to allow the diode to reach a stable state. After waiting for 3 seconds, record the current value IF and the corresponding forward voltage drop VF at this time, and record the temperature T of the diode at the same time.

[0165] After each data recording, determine whether the following conditions for stopping measurement are met: Calculate the change rate of the current VF relative to the last measured VF. Assume that the last measured current is IF1, the forward voltage drop is VF1, and the current measured current is IF2, the forward voltage drop is VF2, then the VF change rate is VF1×VF2−VF1 / (IF2−IF1). If the change rate is greater than 5% / mA, stop measuring.

[0166] Calculate the temperature rise ΔT=T−T0 of the current temperature T relative to the initial temperature T0. If ΔT>10°C, stop measuring.

[0167] Calculate the power consumption of the diode P = VF × IF based on the current value IF and the forward voltage drop VF. If P>0.3W, stop measuring.

[0168] Current reaches 30mA: If the current value reaches 30 mA, stop measuring.

[0169] After stopping the measurement, all the recorded current values ​​IF and the corresponding forward voltage drops VF are organized into a data table.

[0170] Use drawing software to draw the VF-IF curve as the forward voltage drop curve of the diode with the current value IF as the horizontal axis and the forward voltage drop VF as the vertical axis.

[0171] In this solution, the diode leakage current curve of the diode to be replaced is measured by: Prepare a DC power supply with adjustable output voltage. Its output voltage range should be able to meet the requirements of this test, that is, it can be accurately adjusted between 0-30V.

[0172] Connect the negative pole of the power supply to the anode of the diode to be replaced, and connect the positive pole of the power supply to the cathode of the diode to be replaced through a precision sampling resistor in series.

[0173] Use a high-precision voltmeter (such as a digital multimeter with an accuracy of ±0.01%) to measure the voltage value Vsampling across the sampling resistor. Connect the two test probes of the voltmeter to the two ends of the sampling resistor respectively, ensuring that the connection is firm and the contact is good.

[0174] Set the output voltage of the power supply to 0V. Then, gradually increase the voltage in steps of 0.5V from 0V to 5V. Wait for 2 seconds for each step increase to allow the diode to reach a stable state at this voltage. After the waiting time is over, use a voltmeter to measure the voltage value Vsampling across the sampling resistor and record it. At the same time, use a high-precision thermometer (accuracy up to ±0.1℃) to measure the temperature T of the diode and record the temperature value at this time.

[0175] When the voltage reaches 5 V, adjust the voltage step to 1 V and continue to gradually increase the voltage from 5 V to 30 V. Similarly, wait for 2 seconds for each step increase, measure and record V sampling and temperature T.

[0176] During the test, the following four conditions for stopping the test need to be monitored in real time. If any of these conditions is met, the test will be stopped immediately to prevent damage to the diode: IR mutation: Based on the measured Vsample and the known sampling resistor value Rsample, the current leakage current IR is calculated using the formula IR=Vsample / Rsample. At the same time, the ratio of the change in leakage current to the change in voltage under two adjacent voltage steps is calculated.

[0177] For example, the leakage current is IR1 at the current voltage step, the leakage current is IR0 at the previous voltage step, and the voltage change is ΔV (ΔV=0.5V at 0-5V, ΔV=1V at 5-30V). If (IR1-IR0) / ΔV>1μA / V, it is considered that the leakage current has changed suddenly and the test is stopped.

[0178] Temperature rise > 5°C: Before the test begins, record the initial temperature T0 of the diode. During the test, monitor the temperature T of the diode to be replaced in real time. If T-T0>5°C, it means that the temperature rise of the diode to be replaced exceeds the allowable range, and the test is stopped.

[0179] Voltage reaches 30V: When the reverse voltage of the power supply output reaches 30V, the test is stopped regardless of whether other conditions are met to ensure that the diode to be replaced will not be damaged by excessive reverse voltage.

[0180] Current reaches 10μA: Calculate the leakage current IR in real time. If IR reaches 10μA, stop the test to avoid damage to the diode caused by excessive current.

[0181] According to the recorded Vsample at each voltage step and the known sampling resistor Rsample, the corresponding leakage current IR is calculated using the formula IR = Vsample / Rsample. Using drawing software, the voltage VR across the diode to be replaced is used as the horizontal axis, and the leakage current IR is used as the vertical axis to draw the VR-IR curve as the diode leakage current curve.

[0182] In this solution, the diode junction capacitance curve of the diode to be replaced is measured by: Select an LCR digital bridge with stable performance and accuracy that meets the requirements as the measuring instrument. Set the test frequency to 1MHz. This frequency is within the common operating frequency range of high-frequency circuits and can effectively reflect the junction capacitance characteristics of the diode in high-frequency application scenarios.

[0183] Set the test signal level to 20mV. A suitable signal level can ensure the accuracy of the measurement while not causing excessive interference to the working state of the diode, and avoid changes in the internal electrical characteristics of the diode due to excessively high signal levels.

[0184] The bias voltage range is set to 0 to -5 V with a step size of -1 V. By changing the bias voltage and measuring the junction capacitance of the diode under different reverse bias states, we can fully understand the variation of the junction capacitance with the bias voltage.

[0185] When the diode to be tested is vacant, use the LCR digital bridge to record the capacitance value C0 at this time, which is used as the open circuit compensation value. This value is used to compensate for the additional capacitance generated by factors such as stray capacitance in the measurement circuit. These stray capacitances may come from the measurement wire, test fixture, and surrounding environment.

[0186] Short-circuit the diode to be replaced and record the series resistance value Rs displayed by the LCR digital bridge. This value is used as the short-circuit compensation value. Short-circuit compensation is used to correct the influence of the equivalent series resistance in the measurement circuit on the measurement result.

[0187] Starting from a bias voltage of 0 V, gradually reduce the bias voltage to -5 V in steps of -1 V. Wait for 2 seconds each time the bias voltage is adjusted to allow the diode to reach a stable electrical state under the bias voltage.

[0188] After the waiting time is over, use the LCR digital bridge to read the capacitance measurement value Cm at this time. Since the measurement process may be interfered by various factors, the directly read Cm is not the actual junction capacitance value of the diode, and subsequent compensation calculation is required.

[0189] During the measurement process, the following three conditions for stopping the measurement are monitored in real time. Once any of the conditions is met, the measurement is stopped immediately: Capacitance mutation: Calculate the rate of change of capacitance under two adjacent bias voltage steps. Assume that the current bias voltage is VR1, the corresponding capacitance measurement value is Cm1, and the previous bias voltage is VR2 (VR1-VR2=-1V), and the corresponding capacitance measurement value is Cm2. If (Cm1-Cm2) / ((VR1-VR2)×Cm2)>100% / V, that is, the capacitance change rate exceeds 100% / V, it is considered that a capacitance mutation occurs and the measurement is stopped.

[0190] Temperature rise > 5°C: Before the measurement begins, record the initial temperature T0 of the diode. Use a high-precision thermometer (accuracy up to ±0.1°C) to monitor the temperature T of the diode in real time. If T-T0>5°C, it means that the temperature of the diode to be replaced has risen beyond the allowable range. Temperature changes will significantly affect the junction capacitance of the diode. Excessive temperature may cause the diode performance to change or even damage, so the measurement needs to be stopped.

[0191] Bias voltage reaches -5V: When the bias voltage drops to -5V, the measurement stops regardless of whether other conditions are met.

[0192] According to the measured capacitance value Cm, short circuit compensation value Rs and test frequency f (f = 1MHz), the junction capacitance value Cj1 after series resistance compensation is determined by the following formula: .

[0193] Calculate the junction capacitance Cj2 after stray capacitance compensation: .

[0194] Select the junction capacitance values ​​Cj(-1) and Cj(-5) corresponding to the bias voltages of -1V and -5V, substitute them into the following formula to calculate the two Cj0 values ​​respectively, and then take the average of these two Cj0 values ​​as the final zero bias junction capacitance Cj0: .

[0195] In the formula, Indicates the bias voltage.

[0196] Substitute the final zero bias junction capacitance Cj0 back into the above formula to calculate the theoretical junction capacitance corresponding to other bias voltage points. and the junction capacitance value obtained by actual measurement and compensation calculation for comparison.

[0197] Require and The error should be less than 5%. If the error is too large, you need to check whether the measurement circuit connection is correct, whether the instrument is working properly, and whether there is interference in the measurement environment. After troubleshooting the problem, re-measure.

[0198] Use drawing software to draw the VR-Cj curve as the diode junction capacitance curve with the bias voltage VR as the horizontal axis and the junction capacitance value Cj as the vertical axis.

[0199] In this solution, the continuous feature similarity corresponding to the diode forward voltage drop curve is set as the Pearson correlation coefficient, and the calculation method includes: Select multiple forward voltage drop values ​​on the diode forward voltage drop curve to form the VF sequence of the diode to be replaced, and calculate the Pearson correlation coefficient. The formula used is: .

[0200] In the above formula, Indicates the VF sequence of the diode to be replaced, represents the VF sequence of the candidate diode (corresponding to x), represents the average value of x, represents the mean value of y.

[0201] The similarity Svf of this continuous feature is: .

[0202] In this solution, the continuous feature similarity corresponding to the diode leakage current curve is set as the Pearson correlation coefficient, and the calculation method includes: In the voltage range of 1-20V, multiple leakage current values ​​are taken on the diode leakage current curve to form the IR sequence of the diode to be replaced, and the Pearson correlation coefficient is calculated. The formula used is: .

[0203] In the above formula, Indicates the IR sequence of the diode to be replaced, represents the IR sequence of the candidate diode (corresponding to x), represents the average value of x, represents the mean value of y.

[0204] The continuous feature similarity Sir is: .

[0205] In this solution, the continuous feature similarity corresponding to the diode junction capacitance curve is set to be the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component, and the calculation method includes: Take multiple junction capacitance values ​​from the diode junction capacitance curve to form the CJ sequence of the diode to be replaced, and normalize the junction capacitance in the CJ sequence of the diode to be replaced and the candidate diode. The formula used for normalization is: .

[0206] In the formula, represents the normalized junction capacitance value, represents the junction capacitance value, represents the maximum junction capacitance (of the diode to be replaced or the candidate diode corresponding to CJ), Represents the minimum junction capacitance.

[0207] To calculate the root mean square error, the formula used is: .

[0208] In the formula, Indicates the number of selected junction capacitance values, A sequence of normalized values ​​of the junction capacitance of the diode to be replaced, A sequence of normalized values ​​representing the junction capacitance values ​​of the candidate diodes.

[0209] The similarity Scj of this continuous feature is: ; In this solution, the second similarity is calculated as follows: .

[0210] S205. Calculate a third similarity using the first similarity, the second similarity and the corresponding weights, and determine a candidate electronic component that can eventually replace the electronic component to be replaced based on the third similarity.

[0211] In this solution, the third similarity is calculated as follows: .

[0212] In this solution, the top five candidate diodes with the third highest similarity are retained as optional devices for the diodes to be replaced.

[0213] In this solution, at least two discrete characteristic parameters of the electronic components to be replaced are selected, and corresponding tolerances are set for each parameter. By setting a screening condition based on this, the candidate electronic components that obviously do not meet the requirements can be initially filtered out, narrowing the selection range. On this basis, the continuous feature similarity is calculated through the characteristic curve and the continuous parameter value, and the matching degree between the candidate components and the original components is comprehensively measured from both discrete and continuous dimensions. This multi-dimensional and refined screening method can ensure to the greatest extent that the final selected replacement components are highly compatible with the original components in terms of performance, and even better in some key indicators.

[0214] For electronic components such as diodes, this solution comprehensively considers multiple characteristic parameters and curves, avoiding the limitation of judging based on a single parameter or simple feature. By accurately calculating various similarities and combining the corresponding weights to derive the third similarity to determine the final replacement device, it can more accurately identify the appropriate diode model, reduce replacement errors caused by model identification errors, and ensure the normal operation of components in the equipment.

[0215] The setting of the screening conditions at one time and the subsequent step-by-step screening based on different similarities form an orderly and efficient testing process. Maintenance personnel do not need to conduct indiscriminate comprehensive testing on a large number of candidate components. Instead, they can quickly eliminate unmatched options according to the steps set by the plan and focus on candidate components with high similarity. This greatly shortens the time to find suitable replacement components, speeds up the maintenance progress, improves the overall maintenance efficiency, reduces equipment downtime, and reduces production losses caused by equipment failures.

[0216] Setting tolerances for discrete feature parameters and weights when calculating similarities allow the solution to be flexibly adjusted according to different application scenarios and specific needs. For critical devices with extremely high performance requirements, smaller tolerances and stricter similarity weights can be set to ensure the high quality of replacement components; while for some ordinary devices that are more sensitive to cost, tolerance and weight settings can be relaxed within a certain range, and more cost-effective replacement components can be selected while ensuring basic performance. This flexibility makes the solution suitable for component replacement scenarios in various electronic devices.

[0217] Embodiment 2: Figure 3 A schematic diagram of the structure of an electronic device 10 that can be used to implement an embodiment of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0218] like Figure 3As shown, the electronic device 10 includes at least one processor 11, and a memory connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 to the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0219] A number of components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disk, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0220] The processor 11 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 11 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as a method for determining a replacement model of an electronic component.

[0221] In some embodiments, the electronic component replacement model determination method can be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the electronic component replacement model determination method described above can be performed. Alternatively, in other embodiments, the processor 11 can be configured to execute the electronic component replacement model determination method in any other appropriate manner (for example, by means of firmware).

[0222] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0223] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0224] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in conjunction with an instruction execution system, device, or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices, or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0225] To provide interaction with a user, the systems and techniques described herein may be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or trackball) through which the user can provide input to the electronic device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0226] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0227] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0228] Embodiment three: This embodiment proposes a computer program product, including a computer program. When the computer program is executed by a processor, it implements any one of the methods for determining the replacement model of electronic components recorded in Embodiment 1. The implementation process and beneficial effects of the method are the same as the corresponding contents recorded in Embodiment 1, and the specific contents will not be described in detail.

[0229] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for determining a replacement model of an electronic component, characterized in that: include: Selecting at least two discrete characteristic parameters of the electronic component to be replaced, setting a corresponding tolerance for each of the discrete characteristic parameters, wherein the electronic component to be replaced has no silk screen printing, the discrete characteristic parameters are used to numerically characterize characteristic parameters of the electronic component to be replaced, and the values ​​corresponding to the discrete characteristic parameters are determined by measurement; Setting a primary screening condition based on the tolerance, and using the primary screening condition to screen candidate electronic components, includes: For one of the candidate electronic components, if all of the discrete characteristic parameters of the candidate electronic component meet the primary screening condition, the candidate electronic component is retained; otherwise, the candidate electronic component is eliminated; For each candidate electronic component that passes the primary screening condition, calculating a first similarity with the electronic component to be replaced by using a discrete parameter value corresponding to the discrete feature parameter; Selecting at least two characteristic curves of the electronic components to be replaced, wherein the characteristic curves are used to represent performance change trends of the electronic components to be replaced under different working conditions; For the i-th characteristic curve, using the continuous parameter values ​​of the candidate electronic components that have been screened once and corresponding to the characteristic curve, the i-th continuous characteristic similarity is calculated, and the continuous parameter values ​​are the values ​​of the sampling points in the characteristic curve; Calculate the second similarity using all continuous feature similarities and corresponding weights; A third similarity is calculated using the first similarity, the second similarity and the corresponding weights, and a candidate electronic component that can eventually replace the electronic component to be replaced is determined based on the third similarity.

2. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: Setting a filter condition based on the tolerance includes: For one of the discrete feature parameters, the primary screening condition is set as: Based on one of the positive tolerance screening conditions, negative tolerance screening conditions, and bidirectional tolerance screening conditions respectively set corresponding to the positive tolerance, negative tolerance, and bidirectional tolerance in the tolerance.

3. The method for determining the replacement model of an electronic component according to claim 2, characterized in that: The electronic components to be replaced include non-silk-screen diodes; The discrete characteristic parameters include diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage; The diode forward voltage drop is configured to correspond to the bidirectional tolerance screening condition, the diode leakage current, diode junction capacitance, and diode reverse recovery time are configured to correspond to the negative tolerance screening condition, and the diode reverse breakdown voltage is configured to correspond to the forward tolerance screening condition.

4. The method for determining the replacement model of an electronic component according to claim 3, characterized in that: The positive tolerance screening conditions are: ； The negative tolerance screening conditions are: ； The two-way tolerance screening conditions are: ； In the formula, represents the discrete parameter value of the discrete characteristic parameter corresponding to the candidate electronic component, The discrete parameter value representing the discrete characteristic parameter of the electronic component to be replaced, Indicates the tolerance of the corresponding discrete feature parameter.

5. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: The electronic components to be replaced include non-silk-screen diodes; The characteristic curves include a diode forward voltage drop curve, a diode leakage current curve, and a diode junction capacitance curve; The continuous feature similarity corresponding to the diode forward voltage drop curve and the diode leakage current curve is the Pearson correlation coefficient; The continuous feature similarity corresponding to the diode junction capacitance curve is the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component.

6. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: Calculating the first similarity with the electronic component to be replaced by using the discrete parameter value corresponding to the discrete feature parameter includes: The first similarity is calculated using a weighted Euclidean calculation formula, where the weighted Euclidean calculation formula is: ； The formula used to calculate the first similarity is: ； In the formula, Indicates distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced, Represents the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic component.

7. The method for determining the replacement model of an electronic component according to claim 6, characterized in that: After calculating the distance, the method further includes: correcting the distance; The formula used to correct the distance is: ； The formula used to calculate the first similarity is: ； In the formula, represents the corrected distance, Represents the second weight corresponding to the i-th discrete feature parameter.

8. An electronic device, characterized in that: comprising at least one processor, and a memory communicatively connected to the at least one processor; The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for determining a replacement model of an electronic component according to any one of claims 1 to 7.

9. A computer program product, characterized in that The invention comprises a computer program, which, when executed by a processor, implements the method for determining the replacement model of an electronic component according to any one of claims 1 to 7.

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