A method, device and product for determining a replacement model of an electronic component

Abstract

The present invention discloses a method, device and product for determining a replacement model of an electronic component. The method includes: selecting at least two discrete characteristic parameters of the electronic component to be replaced, and setting corresponding tolerances for each discrete characteristic parameter; setting a first screening condition based on the tolerances, and using the first screening condition to perform a first screening on the candidate electronic components, including: for a candidate electronic component, if all the discrete characteristic parameters of the candidate electronic component satisfy the first screening condition, then retain the candidate electronic component, otherwise eliminate the candidate electronic component; for each candidate electronic component that passes the first screening condition, calculating a first similarity with the electronic component to be replaced by using the discrete parameter values corresponding to the discrete characteristic parameters; and determining the candidate electronic components that can finally replace the electronic component to be replaced based on the first similarity.

Description

Technical Field

[0001] Embodiments of the present invention relate to the technical field of electronic maintenance, and particularly to a method, device, and product for determining replacement models of electronic components. Background Art

[0002] In the maintenance and repair of electronic devices, as a basic and crucial component, the accurate identification of the diode model is an important prerequisite for ensuring the repair quality. From the perspective of package types, for small package diodes and glass tube package diodes, due to their small size, it is often difficult to clearly mark the complete silk screen identification on their surfaces. Even if there is a silk screen, it may become blurred or even disappear due to long-term use, environmental erosion, etc., making it difficult for maintenance technicians to quickly and accurately determine the specific model of the diode only by appearance on-site.

[0003] When replacing electronic components such as diodes, maintenance technicians usually cannot use advanced tools to accurately identify the diode model; once the diode model is misidentified, incorrect component replacement may follow. This will not only cause the electronic device to fail to restore normal performance, but may also lead to circuit failures such as short circuits and open circuits, and in severe cases, it may even threaten the operation safety of the device and the personal safety of the user. Summary of the Invention

[0004] The present invention provides a method, device, and product for determining replacement models of electronic components to effectively determine the replaceable models of electronic components.

[0005] In a first aspect, embodiments of the present invention provide a method for determining replacement models of electronic components, including:

[0006] Select at least two discrete characteristic parameters of the electronic component to be replaced, and set corresponding tolerances for each of the discrete characteristic parameters;

[0007] Based on the tolerance, set a primary screening condition, and use the primary screening condition to perform a primary screening on candidate electronic components, including:

[0008] For a candidate electronic component, if all the discrete characteristic parameters of the candidate electronic component satisfy the primary screening condition, retain the candidate electronic component, otherwise eliminate the candidate electronic component;

[0009] For each candidate electronic component that passes the primary screening condition, calculate the first similarity with the electronic component to be replaced using the discrete parameter values corresponding to the discrete characteristic parameters;

[0010] Based on the first similarity, determine the candidate electronic components that can ultimately replace the electronic component to be replaced.

[0011] Optionally, setting the primary screening criteria based on the tolerance includes:

[0012] For one of the discrete characteristic parameters, setting the primary screening criteria as:

[0013] One of the positive tolerance screening criteria, negative tolerance screening criteria, and bidirectional tolerance screening criteria set based on the positive tolerance, negative tolerance, and bidirectional tolerance in the corresponding tolerance.

[0014] Optionally, the electronic component to be replaced includes a non-silkscreen diode;

[0015] The discrete characteristic parameters include diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage;

[0016] Configure the diode forward voltage drop to correspond to the bidirectional tolerance screening criteria, configure the diode leakage current, diode junction capacitance, and diode reverse recovery time to correspond to the negative tolerance screening criteria, and configure the diode reverse breakdown voltage to correspond to the positive tolerance screening criteria.

[0017] Optionally, the positive tolerance screening criteria is:

[0018] ;

[0019] The negative tolerance screening criteria is:

[0020] ;

[0021] The bidirectional tolerance screening criteria is:

[0022] ;

[0023] Wherein, represents the discrete parameter value of the discrete characteristic parameter of the corresponding candidate electronic component, represents the discrete parameter value of the discrete characteristic parameter of the corresponding electronic component to be replaced, represents the tolerance of the corresponding discrete characteristic parameter.

[0024] Optionally, after performing the primary screening on the candidate electronic components using the primary screening criteria, it further includes:

[0025] Selecting at least two characteristic curves of the electronic component to be replaced;

[0026] For the i-th characteristic curve, calculating the i-th continuous characteristic similarity using the continuous parameter value corresponding to the candidate electronic component after the primary screening and corresponding to this characteristic curve;

[0027] Calculate the second similarity using all the continuous feature similarities and the corresponding weights;

[0028] Calculate the third similarity using the first similarity, the second similarity and the corresponding weights, and determine the candidate electronic components that can finally replace the electronic components to be replaced based on the third similarity.

[0029] Optionally, the electronic components to be replaced include non-screen-printed diodes;

[0030] The characteristic curves include the forward voltage drop curve of the diode, the leakage current curve of the diode, and the junction capacitance curve of the diode;

[0031] The continuous feature similarities corresponding to the forward voltage drop curve of the diode and the leakage current curve of the diode are Pearson correlation coefficients;

[0032] The continuous feature similarity corresponding to the junction capacitance curve of the diode is the root mean square error of the junction capacitances of the electronic components to be replaced and the candidate electronic components.

[0033] Optionally, calculating the first similarity with the discrete parameter values corresponding to the discrete feature parameters includes:

[0034] Calculate the first similarity using the weighted Euclidean formula, and the weighted Euclidean formula is:

[0035] ;

[0036] The formula used to calculate the first similarity is:

[0037] ;

[0038] In the formula, represents the distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete feature parameter of the electronic components to be replaced, represents the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic components.

[0039] Optionally, after calculating the distance, it further includes: correcting the distance;

[0040] The formula used to correct the distance is:

[0041] ;

[0042] The formula used to calculate the first similarity is:

[0043] ;

[0044] In the formula, represents the corrected distance, represents the second weight corresponding to the i-th discrete characteristic parameter.

[0045] In a second aspect, an embodiment of the present invention further provides an electronic device, including at least one processor and a memory communicatively connected to the at least one processor;

[0046] The memory stores a computer program executable by the at least one processor. When the computer program is executed by the at least one processor, the at least one processor is enabled to execute any one of the electronic component replacement model determination methods described in the embodiments of the present invention.

[0047] In a third aspect, an embodiment of the present invention further provides a computer program product, including a computer program which, when executed by a processor, implements any one of the electronic component replacement model determination methods described in the embodiments of the present invention.

[0048] Compared with the prior art, the beneficial effects of the present invention are as follows: The present invention proposes an electronic component replacement model determination method. In this method, by selecting at least two discrete characteristic parameters of the electronic component to be replaced and setting corresponding tolerances for each discrete characteristic parameter, a primary screening condition is set based on the tolerances and the candidate electronic components are screened once, which can quickly eliminate the candidate components that obviously do not meet the requirements. In the face of a large number of potential replacement components, this preliminary screening mechanism can greatly reduce the workload of subsequent evaluation and save time and effort.

[0049] Calculating the first similarity with the electronic component to be replaced using the discrete parameter values corresponding to the discrete characteristic parameters can accurately evaluate the matching degree between the candidate component and the original component from a quantitative perspective. It can ensure that the finally selected replacement component is highly similar to the original component in performance, maximally guarantee the normal operation of the device, and reduce the risk of device failure caused by the performance mismatch of the replacement component. Description of the Drawings

[0050] Figure 1 is a flowchart of the electronic component replacement model determination method in the embodiment.

[0051] Figure 2 is a flowchart of another electronic component replacement model determination method in the embodiment.

[0052] Figure 3 is a schematic structural diagram of the electronic device in the embodiment. Detailed Embodiments

[0053] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It can be understood that the specific embodiments described herein are only for explaining the present invention and not for limiting the present invention. In addition, it should be noted that for the sake of description, only the parts related to the present invention rather than all the structures are shown in the drawings.

[0054] Embodiment 1:

[0055] Figure 1 is the flowchart of the method for determining the replacement model of electronic components in the embodiment. Refer to Figure 1 , the method includes:

[0056] S101. Select at least two discrete characteristic parameters of the electronic component to be replaced, and set corresponding tolerances for each discrete characteristic parameter.

[0057] Exemplarily, in this solution, it is assumed that the electronic component to be replaced is an electronic component without a silk screen label, and different types of electronic components may include different characteristic parameters. Characteristic parameters are used to describe the electrical performance of electronic components. For example, characteristic parameters may include voltage characteristics, current characteristics, resistance characteristics, etc.

[0058] Exemplarily, in this solution, discrete characteristic parameters are used to accurately numerically represent characteristic parameters. For example, for the voltage characteristic of a diode, it can be specifically quantified by discrete characteristic parameters such as forward voltage drop and breakdown voltage; the current characteristic can be reflected by discrete characteristic parameters such as reverse leakage current.

[0059] Exemplarily, in this solution, the specific values of the discrete characteristic parameters of the electronic component to be replaced can be obtained by measurement through a measurement circuit, measurement instrument, etc.

[0060] Exemplarily, in this solution, the tolerance represents the allowable deviation between the discrete characteristic parameters of the electronic component to be replaced and the discrete characteristic parameter values of the candidate electronic component. The tolerances corresponding to different discrete characteristic parameters may be different, and the tolerance corresponding to the same discrete characteristic parameter may include a positive deviation and a negative deviation.

[0061] For example, for a certain type of electronic component, for a certain discrete characteristic parameter thereof, the corresponding tolerance may be ±5%, where the deviation greater than zero is a positive deviation and the deviation less than zero is a negative deviation.

[0062] Exemplarily, in this solution, for a certain discrete characteristic parameter of a certain type of electronic component, refer to relevant industry standards, circuit design manuals, and past design experiences to determine the tolerance range. At the same time, the tolerance range can also be optimized and verified through means such as circuit simulation and experimental testing.

[0063] S102. Set the primary screening criteria based on tolerance, and perform a primary screening on the candidate electronic components using the primary screening criteria.

[0064] In this solution, for a candidate electronic component, if all the discrete characteristic parameters of the candidate electronic component meet the primary screening criteria, then the candidate electronic component is retained; otherwise, the candidate electronic component is eliminated.

[0065] Exemplarily, in this solution, the primary screening criteria can be used to determine whether the discrete characteristic parameters of the candidate electronic component are within the set tolerance (range) of the same discrete characteristic parameter of the electronic component to be replaced. If so, the candidate electronic component can be retained; otherwise, the candidate electronic component is eliminated.

[0066] For example, it is set that the discrete characteristic parameters of the electronic component to be replaced include resistance, capacitance, and inductance. If the nominal value of the resistance of the electronic component to be replaced is R0, and the tolerance of the resistance is ±5%; the nominal value of the capacitance is C0, and the tolerance is ±10%; the nominal value of the inductance is L0, and the tolerance is ±8%. Then the primary screening criteria can be:

[0067] The resistance R of the candidate electronic component satisfies 0.95R0 ≤ R ≤ 1.05R0; the capacitance C satisfies 0.9C0 ≤ C ≤ 1.1C0; the inductance L satisfies 0.92L0 ≤ L ≤ 1.08L0.

[0068] Another example is to collect the discrete characteristic parameter data of a large number of normally operating electronic components of the same type as the electronic component to be replaced, analyze the statistical distribution of these data, for example, obtain the mean value μR and standard deviation σR of the resistance value, the mean value μC and standard deviation σC of the capacitance value, and the mean value μL and standard deviation σL of the inductance value. Taking the mean value as the center, ±3σ is taken as the tolerance range. Then the primary screening criteria can be:

[0069] The resistance R of the candidate electronic component satisfies μR−3σR ≤ R ≤ μR+3σR; the capacitance C satisfies μC−3σC ≤ C ≤ μC+3σC; the inductance L satisfies μL−3σL ≤ L ≤ μL+3σL.

[0070] Exemplarily, in this solution, a candidate electronic component database can be established, and the types, models, discrete characteristic parameters and their corresponding values, as well as other specified types of information of the candidate electronic components stored in the database are set. It is set to read the information of all candidate electronic components of the same type as the electronic component to be replaced from the database, and then complete the primary screening in step S102.

[0071] S103. For each candidate electronic component that has passed the primary screening criteria, calculate the first similarity with the electronic component to be replaced using the discrete parameter values corresponding to the discrete characteristic parameters.

[0072] Exemplarily, in this solution, the first similarity represents the similarity between the candidate electronic component and the electronic component to be replaced. It is set that the greater the first similarity, the higher the similarity between the two.

[0073] Exemplarily, in this solution, the method for calculating the first similarity is not limited, and it can be determined according to a preset similarity calculation formula.

[0074] For example, assume that the electronic component to be replaced has a resistance value Rtarget and a capacitance Ctarget, and its discrete feature parameter vector is Xtarget = (Rtarget, Ctarget). For a candidate electronic component, its discrete feature parameter vector is Xcandidate = (Rcandidate, Ccandidate). The Euclidean distance formula can be used to calculate the distance d between Xtarget and Xcandidate.

[0075] Calculate the first similarity , S = 1 / (1 + d), where the closer the value of S is to 1, the more similar the candidate electronic component is to the electronic component to be replaced.

[0076] Another example, assume that the electronic component to be replaced has a forward voltage drop VF and a reverse leakage current IR as discrete feature parameters. The parameters of the electronic component to be replaced are VFtarget and IRtarget, forming a vector Ytarget = (Vftarget, IRtarget); assume that the parameters of the candidate electronic component are VFcandidate and IRcandidate, forming a vector Ycandidate = (Vfcandidate, IRcandidate). The cosine similarity formula can be used to calculate the first similarity , where the cosine similarity formula is:

[0077] .

[0078] Among them, the value range of the first similarity is between -1 and 1, and the closer it is to 1, the more similar the candidate electronic component is to the electronic component to be replaced.

[0079] S104. Determine the candidate electronic components that can finally replace the electronic component to be replaced based on the first similarity.

[0080] Exemplarily, in this solution, the first similarities of different candidate electronic components can be sorted in descending order, and the first N (with the highest similarity) candidate electronic components can be selected as the alternatives that can replace the electronic component to be replaced.

[0081] This embodiment proposes a method for determining the replacement model of electronic components. In this method, by selecting at least two discrete characteristic parameters of the electronic component to be replaced and setting corresponding tolerances for each discrete characteristic parameter, a screening condition is set once based on the tolerances, and the candidate electronic components are screened once, which can quickly eliminate the candidate components that obviously do not meet the requirements. When facing a large number of potential replacement components, this preliminary screening mechanism can greatly reduce the workload of subsequent evaluation and save time and effort.

[0082] Calculating the first similarity with the electronic component to be replaced using the discrete parameter values corresponding to the discrete characteristic parameters can accurately evaluate the matching degree between the candidate component and the original component from a quantitative perspective. It can ensure that the finally selected replacement component is highly similar to the original component in performance, maximize the normal operation of the device, and reduce the risk of device failure caused by the performance mismatch of the replacement component.

[0083] On the basis of the foregoing solution, in an implementable solution, setting a screening condition once based on the tolerance includes:

[0084] For a discrete characteristic parameter, setting a screening condition once is:

[0085] One of the positive tolerance screening condition, negative tolerance screening condition, and two-way tolerance screening condition set based on the positive tolerance, negative tolerance, and two-way tolerance in the corresponding tolerance.

[0086] Exemplarily, in this solution, taking the rated voltage as the discrete characteristic parameter, let the rated voltage of the electronic component to be replaced be Vtest, the rated voltage of the candidate electronic component be Vdb, and the tolerance be ±5%.

[0087] The positive tolerance screening condition can be (for example, in a circuit where there is a requirement for the upper limit of capacitor withstand voltage): only keep the candidates where Vdb ≤ VtestA(1 + 5%).

[0088] The negative tolerance screening condition can be (when there is a requirement for the lower limit of capacitor withstand voltage): only keep the candidates where Vdb ≥ VtestA(1 - 5%).

[0089] The two-way tolerance screening condition can be (when the circuit has a high requirement for the accuracy of the capacitor rated voltage): keep the candidates where ∣Vdb - Vtest∣ ≤ VtestA5%.

[0090] In this solution, the positive tolerance screening condition is set based on the positive tolerance in the tolerance. The upper limit value for the specified discrete characteristic parameter is calculated based on the positive tolerance, and the candidate electronic components that do not exceed this upper limit value are screened out through the positive tolerance screening condition.

[0091] Exemplarily, in this solution, the positive tolerance screening condition is mainly used in scenarios with strict requirements for the upper limit of the discrete characteristic parameter. For example, if the discrete characteristic parameter of a candidate electronic component exceeds a certain upper limit, it may lead to a decline in circuit performance or even damage. In this case, positive tolerance screening is required.

[0092] In this solution, the negative tolerance screening condition is set based on the negative tolerance in the tolerance. The lower limit value for the specified discrete characteristic parameter is calculated based on the negative tolerance, and the candidate electronic components greater than this lower limit value are screened out through the negative tolerance screening condition.

[0093] Exemplarily, in this solution, the negative tolerance screening condition is applicable to situations with clear requirements for the lower limit of the discrete characteristic parameter. If the discrete characteristic parameter of a candidate electronic component is lower than a certain lower limit value, it may not meet the basic functional requirements of the circuit, and negative tolerance screening should be adopted.

[0094] In this solution, the two-way tolerance screening condition is set based on the tolerance interval. The fluctuation range for the discrete characteristic parameter is calculated based on the boundary values of the tolerance, and the candidate electronic components that meet the accuracy requirements are screened out through the two-way tolerance screening condition.

[0095] Exemplarily, in this solution, the two-way tolerance screening condition is applicable to scenarios where high precision is required for candidate electronic components and the discrete characteristic parameter needs to be strictly within a certain range. For example, in precision measurement circuits, some circuits with extremely high requirements for signal stability, etc.

[0096] In this solution, according to the actual requirements, the positive, negative, and two-way tolerance screening conditions are set to screen a specified discrete characteristic parameter, which can specifically meet these diverse requirements. At the same time, among a large number of candidate electronic components, testing and judging each component one by one to see if it is suitable for the circuit will consume a huge amount of time and effort. By setting these tolerance-based screening conditions, the components that do not meet the conditions can be quickly excluded, greatly improving the screening efficiency and reducing unnecessary workload.

[0097] Based on the foregoing solution where the one-time screening conditions include positive tolerance screening condition, negative tolerance screening condition, and two-way tolerance screening condition, in an implementable solution, the electronic component to be replaced includes a non-silkscreened diode.

[0098] In this solution, the set discrete characteristic parameters include diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage.

[0099] In this solution, configure the bidirectional tolerance screening conditions for the forward voltage drop of the diode, configure the negative tolerance screening conditions for the leakage current, junction capacitance, and reverse recovery time of the diode, and configure the positive tolerance screening conditions for the reverse breakdown voltage of the diode.

[0100] Exemplarily, in this solution, the forward voltage drop means that when the diode is in the forward conduction state, current flows from the anode to the cathode, and the voltage difference generated between the anode and the cathode at this time is the forward voltage drop.

[0101] Exemplarily, in this solution, the leakage current means that when the diode is in the reverse bias state, a very small current flows from the cathode to the anode.

[0102] Exemplarily, in this solution, the junction capacitance means that the PN junction of the diode exhibits capacitance characteristics under different bias voltages.

[0103] Exemplarily, in this solution, the reverse recovery time means that when the diode suddenly switches from the forward conduction state to the reverse cut-off state, due to the charge stored in the PN junction not disappearing instantaneously, the time required to return to the reverse cut-off state.

[0104] Exemplarily, in this solution, the reverse breakdown voltage means that when the reverse bias voltage of the diode gradually increases to a certain value, the reverse current will increase sharply, and the voltage when the diode loses its unidirectional conductivity.

[0105] Exemplarily, in this solution, the forward voltage drop of the diode in different circuit applications should neither be too large nor too small. If the forward voltage drop is too large, it will increase the power consumption of the circuit and reduce the power utilization efficiency; if it is too small, it may not meet the normal conduction conditions of the diode and affect the circuit function. Therefore, set the bidirectional tolerance screening conditions to ensure that the forward voltage drop is within a suitable range to meet the precise requirements of the circuit for its performance.

[0106] Exemplarily, in this solution, for parameters such as the leakage current, junction capacitance, and reverse recovery time of the diode in the circuit, the smaller their values, the more beneficial it is to the circuit performance.

[0107] If the leakage current is too large, it will increase the power consumption of the circuit and interfere with signal transmission, especially in circuits with high requirements for power consumption and signal accuracy, such as battery-powered low-power circuits and precision signal detection circuits. If the junction capacitance of the diode is too large, it will affect the switching speed and signal transmission of the diode in high-frequency circuits, resulting in signal distortion and delay. If the reverse recovery time is too long, in high-speed switching circuits such as switching power supplies and high-frequency rectifiers, it will increase the switching loss, reduce the efficiency, and even cause circuit oscillation.

[0108] Therefore, to ensure the circuit performance, it is desired that these parameters do not exceed a certain upper limit, so negative tolerance screening conditions are adopted.

[0109] Exemplarily, in this solution, the reverse breakdown voltage of a diode is the limit of the reverse voltage it can withstand. In circuit design, to ensure that the diode is not damaged by breakdown when reverse-biased and to fully utilize its voltage withstand capacity, a diode with a reverse breakdown voltage greater than the reverse voltage that may occur in the actual circuit needs to be selected. However, an excessively high reverse breakdown voltage may lead to an increase in the cost of the diode and a decrease in some performance indicators.

[0110] Therefore, a forward tolerance screening condition is adopted so that the reverse breakdown voltage of the candidate diode meets the circuit requirements without exceeding the actual needs excessively, in order to balance cost and performance.

[0111] Furthermore, on the basis of the solution of configuring the forward voltage drop of the diode corresponding to the bidirectional tolerance screening condition, configuring the leakage current, junction capacitance, and reverse recovery time of the diode corresponding to the negative tolerance screening condition, and configuring the reverse breakdown voltage of the diode corresponding to the forward tolerance screening condition, in an implementable solution, the forward tolerance screening condition is:

[0112] ;

[0113] The negative tolerance screening condition is:

[0114] ;

[0115] The bidirectional tolerance screening condition is:

[0116] .

[0117] In the formula, represents the discrete parameter value of the discrete characteristic parameter corresponding to the candidate electronic component, represents the discrete parameter value of the discrete characteristic parameter corresponding to the electronic component to be replaced, represents the tolerance of the discrete characteristic parameter.

[0118] Exemplarily, in this solution, let the forward voltage drop of the diode to be replaced be VFtest and the tolerance be TVF. For the forward voltage drop VFdb of the candidate diode, the screening condition is ∣VFdb−VFtest∣≤VFtest×TVF.

[0119] Exemplarily, in this solution, let the leakage current of the diode to be replaced be IRtest and the tolerance be TIR. For the leakage current IRdb of the candidate diode, the screening condition is IRdb≤IRtest×(1 + TIR).

[0120] Exemplarily, in this solution, let the junction capacitance of the diode to be replaced be CJtest, and the tolerance be TCJ. For the junction capacitance CJdb of the candidate diode, the screening condition is CJdb ≤ CJtest × (1 + TCJ).

[0121] Exemplarily, in this solution, let the reverse recovery time of the diode to be replaced be trrtest, and the tolerance be Ttrr. For the reverse recovery time trrdb of the candidate diode, the screening condition is trrdb ≤ trrtest × (1 + Ttrr).

[0122] Exemplarily, in this solution, let the reverse breakdown voltage of the diode to be replaced be VBRtest, and the tolerance be TVBR. For the reverse breakdown voltage VBRdb of the candidate diode, the screening condition is VBRdb ≥ VBRtest × (1 - TVBR).

[0123] Based on any of the foregoing solutions, in an implementable solution, after performing a first screening of the candidate electronic components using the first screening condition, it further includes:

[0124] Select at least two characteristic curves of the electronic component to be replaced.

[0125] For the i-th characteristic curve, calculate the i-th continuous feature similarity using the continuous parameter values corresponding to the characteristic curve of the candidate electronic components after the first screening. Calculate the second similarity using all the continuous feature similarities and the corresponding weights.

[0126] Calculate the third similarity using the first similarity, the second similarity, and the corresponding weights, and determine the candidate electronic components that can ultimately replace the electronic component to be replaced based on the third similarity.

[0127] Exemplarily, in this solution, the characteristic curve is used to describe the continuous variable of a certain performance index of the electronic component under different working states. Through the characteristic curve, the performance change trend of the electronic component under different working conditions can be shown.

[0128] For example, for a diode, the characteristic curves can include: the forward I-V curve, and the change relationship between the forward voltage and the forward current can be used to judge the forward conduction performance of the diode; the reverse I-V curve, and the changes in the reverse voltage and the reverse current can reflect the reverse cut-off characteristic and the state before breakdown of the diode.

[0129] Exemplarily, in this solution, the values of the sampling points in the characteristic curve are used as the continuous parameter values. For example, for the forward I-V curve, the continuous parameter values can be the forward current and / or the forward voltage, and for the reverse I-V curve, the continuous parameter values can be the reverse current and / or the reverse voltage.

[0130] Exemplarily, in this solution, the continuous characteristic similarity of the i-th can be calculated using the continuous parameter values corresponding to the characteristic curve of the candidate electronic components after the first screening, which can be:

[0131] For a characteristic curve, calculate the similarity between the characteristic curve of the candidate electronic component and the characteristic curve of the electronic component to be replaced. In this solution, the method for calculating the similarity of the characteristic curve is not limited. For example, the calculated Euclidean distance, cosine similarity, Pearson correlation coefficient, mean square error, etc. can be used to characterize the similarity between the two characteristic curves.

[0132] For example, for the reverse I-V curve, assume that the candidate electronic component has the reverse current IRcandidate and reverse voltage VRcandidate data of m measurement points, and the diode to be replaced corresponds to the reverse current IRtarget and reverse voltage VRtarget data of m measurement points.

[0133] Calculate the mean absolute error of the reverse current MAEIR:

[0134] ;

[0135] Calculate the mean absolute error of the reverse voltage MAEVR:

[0136] ;

[0137] Then the continuous characteristic similarity SIR of this item can be:

[0138] .

[0139] In the formula, , are weights.

[0140] Exemplarily, in this solution, an electronic component to be replaced includes multiple characteristic curves. The continuous characteristic similarities corresponding to all the characteristic curves are weighted and summed to obtain the second similarity, and then the first similarity and the second similarity are weighted and summed to obtain the third similarity.

[0141] In this solution, determining the similarity between the electronic component to be replaced and the candidate electronic component based on the discrete characteristic parameters and characteristic curves of the electronic component can better match the performance of the electronic component to be replaced, thereby ensuring that the circuit can maintain a stable and good working state after replacement, maintaining or even improving the overall performance of the circuit, and reducing the performance fluctuations and uncertainties caused by component replacement.

[0142] On the basis of the foregoing method further including the solution for determining the second similarity, in an implementable solution, the electronic component to be replaced includes a no-silkscreen diode.

[0143] In this solution, the characteristic curves include the forward voltage drop curve of the diode, the leakage current curve of the diode, and the junction capacitance curve of the diode.

[0144] In this solution, the continuous feature similarity corresponding to the forward voltage drop curve of the diode and the leakage current curve of the diode is the Pearson correlation coefficient; the continuous feature similarity corresponding to the junction capacitance curve of the diode is the root mean square error of the junction capacitance of the electronic component to be replaced and the candidate electronic component.

[0145] On the basis of any of the foregoing solutions, in an implementable solution, calculating the first similarity with the discrete parameter values corresponding to the discrete feature parameters for the electronic component to be replaced includes:

[0146] Calculating the first similarity using the weighted Euclidean calculation formula, and the weighted Euclidean calculation formula is:

[0147] ;

[0148] The formula used to calculate the first similarity is:

[0149] .

[0150] In the formula, represents the distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete feature parameter of the electronic component to be replaced, represents the discrete parameter value corresponding to the i-th discrete feature parameter of the candidate electronic component.

[0151] In this solution, the weighted Euclidean calculation formula is used to calculate the first similarity. When measuring the similarity between the candidate electronic component and the electronic component to be replaced, considering the importance differences of different discrete feature parameters, more accurate evaluation is achieved by assigning different weights.

[0152] On the basis of the foregoing solution of calculating the first similarity using the weighted Euclidean calculation formula, in an implementable solution, after calculating the distance, it further includes: correcting the distance;

[0153] The formula used to correct the distance is:

[0154] ;

[0155] The formula used to calculate the first similarity is:

[0156] .

[0157] In the formula, represents the corrected distance, Indicates the second weight corresponding to the i-th discrete characteristic parameter.

[0158] In this solution, the purpose of correcting the distance is to increase the dispersion penalty for cases where the discrete parameter values vary greatly. By increasing the dispersion penalty, it is possible to effectively distinguish electronic components that seem close in distance on the surface but have significant differences in actual parameters. In large-scale candidate component screening, it is possible to avoid misselecting electronic components with seemingly close parameters but large dispersion in key parameters due to simple distance calculations.

[0159] Figure 2 Is a flowchart of another method for determining the replacement model of electronic components in the embodiment. Refer to Figure 2 On the basis of any of the foregoing solutions, in an implementable solution, the method includes:

[0160] S201. Select at least two discrete characteristic parameters of the electronic component to be replaced, and set corresponding tolerances for each discrete characteristic parameter.

[0161] In this solution, it is assumed that the electronic component to be replaced is a small-package diode without silk screen, and the method is applicable to the selection of replaceable devices for small-package diodes without silk screen.

[0162] In this solution, the discrete characteristic parameters set for the electronic component to be replaced include the forward voltage drop VF of the diode, the leakage current IR of the diode, the junction capacitance CJ of the diode, the reverse recovery time TRR of the diode, and the reverse breakdown voltage VBR of the diode.

[0163] In this solution, the tolerance intervals for VF, IR, CJ, TRR, and VBR are set to ±5%, ±10%, ±8, ±10%, and ±5% respectively.

[0164] In this solution, the discrete parameter values corresponding to each discrete characteristic parameter are determined by measurement. Specifically, the discrete parameter values of each discrete characteristic parameter of the electronic component to be replaced are determined by measurement using common laboratory tools (such as DC power supplies, multimeters, oscilloscopes, signal generators, and bridges, etc.).

[0165] The measurement method for VF includes: measuring the voltage value of the diode to be replaced through a digital multimeter under a specified current, which is the forward voltage drop of the diode.

[0166] The measurement method for IR includes: applying a specified reverse voltage to the diode to be replaced, and measuring the current passing through the diode to be replaced through a digital multimeter, which is the leakage current of the diode.

[0167] The measurement method for CJ includes: using the principle of AC bridge balance, comparing the junction capacitance of the diode to be replaced with a known standard capacitance, and when the bridge reaches balance, calculating the value of the junction capacitance of the diode.

[0168] The measuring method of TRR includes:

[0169] Construct a test circuit, and connect the signal generator to the positive electrode of the diode to be replaced through a current-limiting resistor. Among them, the value of the current-limiting resistor R is 470Ω, which is determined after being estimated based on the junction capacitance value, aiming to ensure that the circuit current is within a safe and appropriate range during the test and avoid damage to the diode to be replaced caused by excessive current.

[0170] The negative electrode of the diode to be replaced is directly grounded to form a complete current loop.

[0171] Connect a current probe in series in the circuit to ensure that the direction of the current probe is strictly consistent with the direction of current flow, so as to accurately measure the current value in the circuit. The current probe is selected with a bandwidth ≥ 100MHz, and degaussing and zero calibration operations need to be performed before use to ensure the accuracy of the measurement.

[0172] The initial range is set to 50mA / div. During the actual test, the range can be flexibly adjusted according to the measured IRmax (maximum reverse current), and the AC coupling method is adopted to effectively isolate the DC component and capture the AC current signal more clearly.

[0173] Connect the voltage probe across the two ends of the diode to measure the voltage change across the diode to be replaced.

[0174] The signal generator outputs a square wave signal, and its frequency is set to the estimated frequency. This estimated frequency needs to be pre-estimated according to the characteristics of the diode to be replaced and actual test experience to ensure that the reverse recovery characteristics of the diode to be replaced can be effectively excited during the test.

[0175] The amplitude of the square wave signal is set to ±5V. This amplitude can not only meet the requirements of forward conduction and reverse cut-off of the diode to be replaced, but also test the performance of the diode to be replaced within a safe range.

[0176] The duty cycle is set to 50%, ensuring that the forward conduction and reverse cut-off times are equal, which is conducive to accurately observing and analyzing the performance changes of the diode to be replaced in different states.

[0177] Set the rise / fall time of the signal generator to the minimum value (<10ns) to simulate a rapid signal change and more realistically reflect the reverse recovery characteristics of the diode to be replaced in the high-speed switching state.

[0178] For the diode to be replaced with a reverse recovery time trr (estimated) < 50ns, the oscilloscope bandwidth is set ≥ 500MHz. This is because a shorter reverse recovery time means a higher signal change frequency, and a high-bandwidth oscilloscope is required to accurately capture and display signal details.

[0179] When 50 ns ≤ trr (estimated) < 200 ns, the oscilloscope bandwidth setting ≥ 200 MHz. Within this reverse recovery time range, a moderate bandwidth can meet the effective measurement and analysis of signals.

[0180] If trr (estimated) ≥ 200 ns, the oscilloscope bandwidth setting ≥ 100 MHz. For diodes with a longer reverse recovery time, a relatively lower bandwidth can meet the measurement requirements while avoiding excessive noise interference introduced by too high a bandwidth.

[0181] When trr (estimated) < 100 ns, the oscilloscope sampling rate setting ≥ 5 GS / s. A high sampling rate can sample rapidly changing signals more precisely, ensuring that every detail of the signal is captured, thus accurately measuring the reverse recovery time.

[0182] For the case of 100 ns ≤ trr (estimated) < 1 μs, the sampling rate setting ≥ 2 GS / s. Within this reverse recovery time interval, an appropriate sampling rate can improve the test efficiency while ensuring the measurement accuracy.

[0183] If trr (estimated) ≥ 1 μs, the sampling rate setting ≥ 1 GS / s. At this time, a lower sampling rate can meet the measurement requirements for slowly changing signals while reducing the pressure on the oscilloscope hardware performance.

[0184] Before the formal test, first short-circuit the diode to be replaced and send a standard square wave signal (rise time < 1 ns) to the test circuit. Simultaneously measure the waveforms of the voltage channel and the current channel through the oscilloscope, and record the time difference Δt between the falling edges of the two channels. This time difference is used as the system delay compensation value. This compensation mechanism is used to eliminate the influence of the delay of the test system itself on the measurement results.

[0185] The formal test begins. First, apply a forward voltage through the signal generator to turn on the diode to be replaced. At this time, record the forward current. Ideally, the forward current should be stable at about 10 mA. If the deviation of the forward current is too large, it is necessary to check whether the connection of the test circuit and the performance of the diode to be replaced are normal.

[0186] When the signal generator outputs -5 V, the diode enters the reverse bias state. At this time, the oscilloscope quickly captures the current waveform and accurately marks t0 (the moment when the current starts to drop from 90% of IFmax) and t2 (the moment when the current drops to 10% of the reverse peak value).

[0187] By calculating trrc = t2 - t0, the measured reverse recovery time of the diode to be replaced can be obtained. The diode reverse recovery time TRR = trrc - Δt.

[0188] To ensure the accuracy and reliability of the test results, the above test steps need to be repeated at least 5 times. After each test, record and analyze the measured trrc value. If the results of multiple measurements vary significantly, it is necessary to check whether there are interference factors or equipment failures during the test process.

[0189] During the test process, continuously monitor the maximum reverse current IRmax in the circuit. If IRmax > 100 mA, immediately stop the measurement. Excessive reverse current may cause the diode to be replaced to overheat and be damaged, and may even lead to test equipment failures. Therefore, overcurrent protection is an important measure to ensure test safety.

[0190] Closely monitor the temperature change of the diode to be replaced. When the temperature rise > 10 °C, stop the test. Excessive temperature of the diode to be replaced will affect its performance, resulting in inaccurate measurement results, and may also cause irreversible damage to the diode to be replaced.

[0191] Carefully observe the current waveform displayed on the oscilloscope. If there is a ringing phenomenon or the current noise exceeds 20% of IRmax, stop the measurement. Abnormal waveforms may indicate problems such as interference in the test circuit, unstable component performance, or unreasonable test equipment settings. Continuing the measurement at this time will not yield accurate reverse recovery time.

[0192] The measurement method of VBR includes:

[0193] Construct a test circuit. Connect the positive pole of the power supply to the anode of the diode to be replaced through a current-limiting resistor, and directly ground the negative pole of the power supply. The role of the current-limiting resistor is crucial. It can effectively limit the current in the circuit, prevent excessive current during the reverse breakdown of the diode to be replaced, and thus protect the diode to be replaced and the power supply equipment from being damaged. When selecting the current-limiting resistor, its resistance value needs to be determined comprehensively according to factors such as the power supply voltage, the estimated reverse breakdown current of the diode to be replaced, and the safety requirements of the circuit.

[0194] Ensure that the connections of the test circuit are firm and reliable, and avoid loose connections, short circuits, etc. to ensure the stability of the test process and the accuracy of the measurement results.

[0195] Judgment of the type of diode to be replaced: Based on the forward voltage drop VF (@10 mA) of the diode measured previously, accurately judge the type of the diode, and then determine the corresponding test parameters.

[0196] If the measured VF is in the range of 0.6 - 0.7 V, it is determined that the diode is an ordinary small-signal diode. For such diodes, set the current threshold to 1 mA, the relative current change rate threshold to 1 μA / V, and the temperature threshold to 50 °C.

[0197] If VF is less than 0.4V, then the diode is a Schottky diode. For the Schottky diode, the current threshold is set to 0.5mA, the relative current change rate threshold is 2μA / V, and the temperature threshold is 60°C.

[0198] Apply a reverse voltage of 5V to the diode, and use a high-precision current measurement instrument (such as a microammeter or a multimeter with a high-sensitivity current measurement function) to record the initial leakage current IR0 at this time. Then, calculate the relative current threshold through the formula, that is, relative current threshold = IR0 × 100. If the calculated relative current threshold is less than 0.1μA, then take the relative current threshold as 10μA. At the same time, it is necessary to confirm that this relative current threshold does not exceed the corresponding absolute current threshold (1mA for ordinary small-signal diodes and 0.5mA for Schottky diodes).

[0199] Conduct step-by-step tests:

[0200] The first stage (0 - 30V): In this stage, gradually increase the reverse voltage applied across the diode to be replaced in steps of 1V. After each voltage step increase, maintain a waiting time of 2 seconds to allow the diode to be replaced to fully adapt to the voltage change and reach a stable operating state. After the waiting time ends, use the corresponding measuring instrument to accurately record the current IR and the temperature T of the diode at this time, and calculate the current change rate S = ΔIR / ΔV. Here, ΔIR is the difference in current values between the current step and the previous step, and ΔV is the voltage step value (1V).

[0201] The second stage (30 - 100V): When the voltage reaches 30V, enter the second-stage test. In this stage, the voltage step is adjusted to 2V / step, and the waiting time per step is extended to 3 seconds. Similarly, after the waiting time of each step ends, record the current IR and the temperature T, and calculate the current change rate S. As the voltage increases, the reverse characteristics of the diode gradually emerge. Appropriately increasing the voltage step and the waiting time can more efficiently capture its performance changes while ensuring the measurement accuracy.

[0202] The third stage (>100V): When the voltage exceeds 100V, enter the third stage. At this time, the voltage step is set to 5V / step, and the waiting time is further extended to 5 seconds. Continue to record the current IR, the temperature T, and calculate the current change rate S according to the above method. In the high-voltage region, the reverse breakdown characteristics of the diode are more significant. Larger voltage steps and longer waiting times help to quickly determine the approximate range of the reverse breakdown voltage while ensuring the stability of the measurement process.

[0203] During the entire testing process, the current IR in the circuit is monitored in real time. If IR exceeds the absolute current threshold set for the corresponding diode type to be replaced (1 mA for ordinary small-signal diodes and 0.5 mA for Schottky diodes), the measurement is immediately stopped. Excessive current may cause the diode to overheat and be damaged, or even lead to faults in the testing equipment. Therefore, this is a crucial protection mechanism to ensure testing safety and equipment integrity.

[0204] Continuously calculate the current change rate S and compare it with the relative current change rate threshold for the corresponding diode type (1 μA / V for ordinary small-signal diodes and 2 μA / V for Schottky diodes). Once S exceeds the threshold, it indicates that the current change of the diode is abnormal and may have entered the unstable region of reverse breakdown. At this time, the measurement should be stopped to avoid inaccurate measurement results and possible damage to the diode.

[0205] Closely monitor the change in the temperature T of the diode. When T exceeds the temperature threshold set for the corresponding diode type (50 °C for ordinary small-signal diodes and 60 °C for Schottky diodes), stop the measurement. Excessive temperature will affect the performance of the diode, resulting in inaccurate measurement results and may cause irreversible thermal damage to the diode.

[0206] Record the voltage value when the measurement stops: When the testing process stops due to meeting any of the above stop conditions, accurately record the voltage value Vstop applied across the diode at this time. This voltage value is a key data point for judging the reverse breakdown characteristics of the diode.

[0207] According to the previously determined diode type, different calculation methods are used to determine the reverse breakdown voltage VBR.

[0208] For ordinary small-signal diodes, calculate the reverse breakdown voltage through the formula VBR = Vstop × 0.9. This calculation method is an empirical formula based on a large amount of experimental data and theoretical analysis. Considering the variation law of the characteristic curve of ordinary small-signal diodes near reverse breakdown, multiplying by 0.9 can more accurately estimate its actual reverse breakdown voltage.

[0209] For Schottky diodes, use the formula VBR = Vstop × 0.85 to calculate the reverse breakdown voltage. Schottky diodes have unique structures and electrical characteristics, and their reverse breakdown characteristics are different from those of ordinary small-signal diodes. Through experimental verification and data analysis, multiplying by 0.85 can better conform to the actual reverse breakdown voltage situation of Schottky diodes.

[0210] S202. Set a primary screening condition based on tolerance and use the primary screening condition to conduct a primary screening of the candidate electronic components.

[0211] In this solution, the forward voltage drop of the diode is set corresponding to the bidirectional tolerance screening condition, the leakage current of the diode, the junction capacitance of the diode, and the reverse recovery time of the diode are configured corresponding to the negative tolerance screening conditions, and the reverse breakdown voltage of the diode is configured corresponding to the positive tolerance screening condition.

[0212] In this solution, if the tolerance of the forward voltage drop of the diode TVF is 5%. For the forward voltage drop VFdb of the candidate diode, the screening condition is ∣VFdb−VF∣≤VF×5%.

[0213] In this solution, if the tolerance of the leakage current of the diode TIR is -2%. For the leakage current IRdb of the candidate diode, the screening condition is IRdb≤IR×(1 - 2%).

[0214] Exemplarily, in this solution, if the tolerance of the junction capacitance of the diode TCJ is 1%. For the junction capacitance CJdb of the candidate diode, the screening condition is CJdb≤CJ×(1 + 1%).

[0215] Exemplarily, in this solution, if the tolerance of the reverse recovery time of the diode Ttrr is -10%. For the reverse recovery time trrdb of the candidate diode, the screening condition is trrdb≤TRR×(1−10%).

[0216] Exemplarily, in this solution, if the tolerance of the reverse breakdown voltage of the diode TVBR is 5%. For the reverse breakdown voltage VBRdb of the candidate diode, the screening condition is VBRdb≥VBR×(1 - 5%).

[0217] S203. For each candidate electronic component that has passed the first screening condition, calculate the first similarity with the electronic component to be replaced using the discrete parameter values corresponding to the discrete characteristic parameters.

[0218] In this solution, the weighted Euclidean distance formula is used to calculate the first similarity, and the adopted formula includes:

[0219] ;

[0220] ;

[0221] .

[0222] In the formula, is the first similarity, and the weights corresponding to VF, IR, CJ, TRR, and VBR are set to 0.25, 0.15, 0.15, 0.2, and 0.25 respectively. represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced. Represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the candidate electronic component, and sets the weights corresponding to VF, IR, CJ, TRR, and VBR Are 0.01, 0.02, 0.02, 0.01, and 0.05 respectively.

[0223] In this solution, and Are (the VF, IR, CJ, TRR, and VBR of the to-be-replaced and candidate diodes respectively) the normalized discrete parameter values. The specific method of normalization is:

[0224] .

[0225] In the formula, Represents a discrete parameter value in the candidate or to-be-replaced diode, Represents the normalized value corresponding to the candidate or to-be-replaced diode, Identifies the minimum value of the corresponding discrete parameter value in the candidate diode, The maximum value of the corresponding discrete parameter value in the candidate diode.

[0226] In this step, retain the top 10 candidate diodes with the highest first similarity.

[0227] S204. Select at least two characteristic curves of the to-be-replaced electronic component; for the i-th characteristic curve, use the continuous parameter value corresponding to the candidate electronic component after the first screening and this characteristic curve to calculate the i-th continuous characteristic similarity; use all the continuous characteristic similarities and the corresponding weights to calculate the second similarity.

[0228] In this solution, it is set that the characteristic curves include the forward voltage drop curve of the diode, the leakage current curve of the diode, and the junction capacitance curve of the diode. It is set that the characteristic curves of the to-be-replaced diode are measured and determined by common laboratory tools (such as DC power supplies, multimeters, oscilloscopes, signal generators, and bridges, etc.).

[0229] In this solution, the measurement method of the forward voltage drop curve of the to-be-replaced diode includes:

[0230] Connect the to-be-replaced diode in the forward direction to the circuit of the power supply and the current source, connect a voltmeter to measure the forward voltage drop across the diode, and at the same time place a thermometer near the diode to accurately measure its temperature.

[0231] Record the initial temperature T0. Set the initial current value of the current source to 0 mA.

[0232] When the current value is less than 10 mA, increase the current value of the current source in steps of 1 mA; when the current value is greater than or equal to 10 mA, increase the current value in steps of 5 mA.

[0233] After adjusting the current value each time, wait for 3 seconds to allow the diode to reach a stable state. After waiting for 3 seconds, record the current value IF and the corresponding forward voltage drop VF at this time, and also record the temperature T of the diode.

[0234] After each data recording, determine whether the following conditions for stopping the measurement are met:

[0235] Calculate the change rate of the current VF with respect to VF during the previous measurement. Assume that the current during the previous measurement is IF1, the forward voltage drop is VF1, the current during the current measurement is IF2, and the forward voltage drop is VF2. Then the change rate of VF is (VF1×VF2−VF1) / (IF2−IF1). If this change rate is greater than 5% / mA, stop the measurement.

[0236] Calculate the temperature rise ΔT = T−T0 of the current temperature T with respect to the initial temperature T0. If ΔT>10°C, stop the measurement.

[0237] Calculate the power consumption P = VF×IF of the diode according to the current value IF and the forward voltage drop VF measured currently. If P>0.3W, stop the measurement.

[0238] The current reaches 30 mA: If the current value currently reaches 30 mA, stop the measurement.

[0239] After stopping the measurement, organize all the recorded current values IF and the corresponding forward voltage drops VF into a data table.

[0240] Using a drawing software, with the current value IF as the abscissa and the forward voltage drop VF as the ordinate, plot the VF-IF curve as the forward voltage drop curve of the diode.

[0241] In this solution, the measurement method for the diode leakage current curve of the diode to be replaced includes:

[0242] Prepare a DC power supply with adjustable output voltage, and its output voltage range should be able to meet the requirements of this test, that is, it can be accurately adjusted between 0 - 30V.

[0243] Connect the negative pole of the power supply to the anode of the diode to be replaced, and connect the positive pole of the power supply to the cathode of the diode to be replaced through a series of a precision sampling resistor.

[0244] Use a high-precision voltmeter (such as a digital multimeter with an accuracy of up to ±0.01%) to measure the voltage value Vsampling across the sampling resistor. Connect the two test probes of the voltmeter to both ends of the sampling resistor respectively, ensuring firm connection and good contact.

[0245] Set the output voltage of the power supply to 0V. Then, gradually increase the voltage in steps of 0.5V from 0V to 5V. For each step increase, wait for 2 seconds to allow the diode to be replaced to reach a stable state at that voltage. After the waiting time ends, use a voltmeter to measure the voltage value V_sampling across the sampling resistor and record it. At the same time, use a high-precision thermometer (accuracy up to ±0.1°C) to measure the temperature T of the diode and record the temperature value at this time.

[0246] When the voltage reaches 5V, adjust the voltage step to 1V and continue to gradually increase the voltage from 5V to 30V. Similarly, for each step increase, wait for 2 seconds, measure and record V_sampling and temperature T.

[0247] During the test, the following four conditions for stopping the test need to be monitored in real time. As long as any one of the conditions is met, the test should be stopped immediately to prevent damage to the diode:

[0248] IR mutation: Based on the measured V_sampling and the known resistance value R_sampling of the sampling resistor, calculate the current leakage IR at the current time through the formula IR = V_sampling / R_sampling. At the same time, calculate the ratio of the change in current leakage between two adjacent voltage steps to the change in voltage.

[0249] For example, if the current leakage at the current voltage step is IR1, the current leakage at the previous voltage step is IR0, and the voltage change is ΔV (ΔV = 0.5V when 0 - 5V, ΔV = 1V when 5 - 30V), if (IR1 - IR0) / ΔV > 1μA / V, it is considered that the current leakage has mutated and the test is stopped.

[0250] Temperature rise > 5°C: Before the test starts, record the initial temperature T0 of the diode. During the test, monitor the temperature T of the diode to be replaced in real time. If T - T0 > 5°C, it means that the temperature of the diode to be replaced has risen beyond the allowable range and the test is stopped.

[0251] Voltage reaches 30V: When the reverse voltage output by the power supply reaches 30V, regardless of whether other conditions are met, the test is stopped to ensure that the diode to be replaced will not be damaged by excessive reverse voltage.

[0252] Current reaches 10μA: Calculate the current leakage IR in real time. If IR reaches 10μA, stop the test to avoid damage to the diode caused by excessive current.

[0253] Based on the recorded V_sampling at each voltage step and the known resistance value R_sampling of the sampling resistor, use the formula IR = V_sampling / R_sampling to calculate the corresponding current leakage IR. Use drawing software to plot the VR - IR curve with the voltage VR across the diode to be replaced as the abscissa and the current leakage IR as the ordinate, as the diode current leakage curve.

[0254] In this solution, the measurement method of the diode junction capacitance curve of the diode to be replaced includes:

[0255] Select an LCR digital bridge with stable performance and accuracy meeting the requirements as the measuring instrument. Set the test frequency to 1 MHz. This frequency is within the common operating frequency range of high-frequency circuits and can effectively reflect the junction capacitance characteristics of the diode in high-frequency application scenarios.

[0256] Set the test signal level to 20 mV. An appropriate signal level can not only ensure the accuracy of the measurement but also not cause excessive interference to the operating state of the diode, avoiding changes in the internal electrical characteristics of the diode due to too high a signal level.

[0257] Set the bias voltage range from 0 to -5 V with a step size of -1 V. By changing the bias voltage, measure the junction capacitance of the diode under different reverse bias states, so as to comprehensively understand the variation law of the junction capacitance with the bias voltage.

[0258] When the position of the diode to be measured is empty, use the LCR digital bridge to record the capacitance value C0 at this time. This value is used as the open-circuit compensation value. This value is used to compensate for the additional capacitance generated by factors such as stray capacitance in the measurement circuit. These stray capacitances may come from measurement wires, test fixtures, and the surrounding environment, etc.

[0259] Short-circuit the position of the diode to be replaced and record the series resistance value Rs displayed by the LCR digital bridge. This value is used as the short-circuit compensation value. Short-circuit compensation is used to correct the influence of the equivalent series resistance existing in the measurement circuit on the measurement result.

[0260] Start from the bias voltage of 0 V and gradually reduce the bias voltage to -5 V in steps of -1 V. Each time the bias voltage is adjusted, wait for 2 seconds to allow the diode to be replaced to reach a stable electrical state at this bias voltage.

[0261] After the waiting time ends, use the LCR digital bridge to read the capacitance measurement value Cm at this time. Since the measurement process may be interfered by various factors, the directly read Cm is not the true junction capacitance value of the diode, and subsequent compensation calculations are required.

[0262] During the measurement process, monitor the following three conditions for stopping the measurement in real time. Once any one of the conditions is met, immediately stop the measurement:

[0263] Capacitance mutation: Calculate the change rate of capacitance values at two adjacent bias voltage steps. Assume the current bias voltage is VR1, the corresponding capacitance measurement value is Cm1, the previous bias voltage is VR2 (VR1 - VR2 = -1V), and the corresponding capacitance measurement value is Cm2. If (Cm1 - Cm2) / ((VR1 - VR2)×Cm2) > 100% / V, that is, the capacitance change rate exceeds 100% / V, it is considered that capacitance mutation occurs and the measurement is stopped.

[0264] Temperature rise > 5°C: Before the measurement starts, record the initial temperature T0 of the diode. Use a high-precision thermometer (accuracy up to ±0.1°C) to monitor the temperature T of the diode in real time. If T - T0 > 5°C, it means that the temperature of the diode to be replaced has risen beyond the allowable range. Temperature change will significantly affect the junction capacitance of the diode, and too high a temperature may cause changes or even damage to the performance of the diode. Therefore, the measurement needs to be stopped.

[0265] Bias voltage reaches -5V: When the bias voltage drops to -5V, regardless of whether other conditions are met, the measurement is stopped.

[0266] According to the measured capacitance value Cm, short-circuit compensation value Rs, and test frequency f (f = 1MHz), determine the junction capacitance value Cj1 after series resistance compensation through the following formula:

[0267] 。

[0268] Calculate the junction capacitance value Cj2 after stray capacitance compensation:

[0269] 。

[0270] Select the junction capacitance values Cj(-1) and Cj(-5) corresponding to the two points of bias voltage -1V and -5V, substitute them into the following formula to calculate two Cj0 values respectively, and then take the average of these two Cj0 values as the final zero-bias junction capacitance Cj0:

[0271] 。

[0272] In the formula, represents the bias voltage.

[0273] Substitute the obtained final zero-bias junction capacitance Cj0 back into the above formula to calculate the theoretical junction capacitance values corresponding to other bias voltage points and compare with the junction capacitance values obtained by actual measurement and compensation calculation.

[0274] Requirements and The error should be less than 5%. If the error is too large, it is necessary to check whether the measurement circuit connection is correct, whether the instrument and equipment are working properly, and whether there are interferences in the measurement environment, etc. After troubleshooting, re-measure.

[0275] Use drawing software to plot the VR-Cj curve with the offset voltage VR as the abscissa and the junction capacitance value Cj as the ordinate, as the diode junction capacitance curve.

[0276] In this solution, the continuous feature similarity corresponding to the diode forward voltage drop curve is set as the Pearson correlation coefficient, and the calculation method includes:

[0277] Select multiple forward voltage drop values on the diode forward voltage drop curve to form the VF sequence of the diode to be replaced, and calculate the Pearson correlation coefficient. The formula used is:

[0278] .

[0279] In the above formula, represents the VF sequence of the diode to be replaced, represents the VF sequence of the candidate diode (corresponding to x), represents the average value of x, represents the average value of y.

[0280] This continuous feature similarity Svf is:

[0281] .

[0282] In this solution, the continuous feature similarity corresponding to the diode leakage current curve is set as the Pearson correlation coefficient, and the calculation method includes:

[0283] In the voltage range of 1-20V, take multiple leakage current values on the diode leakage current curve to form the IR sequence of the diode to be replaced, and calculate the Pearson correlation coefficient. The formula used is:

[0284] .

[0285] In the above formula, represents the IR sequence of the diode to be replaced, represents the IR sequence of the candidate diode (corresponding to x), represents the average value of x, represents the average value of y.

[0286] This continuous feature similarity Sir is:

[0287] .

[0288] In this solution, the continuous feature similarity corresponding to the diode junction capacitance curve is set as the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component. The calculation method includes:

[0289] Take multiple junction capacitance values from the diode junction capacitance curve to form the CJ sequence of the diode to be replaced. Normalize the junction capacitances in the CJ sequences of the diode to be replaced and the candidate diode. The formula used for normalization is:

[0290] 。

[0291] In the formula, represents the normalized junction capacitance value, represents the junction capacitance value, represents the maximum junction capacitance (of the diode to be replaced or the candidate diode corresponding to CJ), represents the minimum junction capacitance.

[0292] Calculate the root mean square error. The formula used is:

[0293] 。

[0294] In the formula, represents the number of multiple junction capacitance values selected, the sequence of normalized values of the junction capacitance values of the diode to be replaced, represents the sequence of normalized values of the junction capacitance values of the candidate diode.

[0295] This continuous feature similarity Scj is:

[0296] ;

[0297] In this solution, the calculation method of the second similarity is:

[0298] 。

[0299] S205. Calculate the third similarity using the first similarity, the second similarity, and the corresponding weights, and determine the candidate electronic components that can ultimately replace the electronic component to be replaced based on the third similarity.

[0300] In this solution, the calculation method of the third similarity is:

[0301] 。

[0302] In this solution, retain the top 5 candidate diodes with the highest third similarity as the optional devices for the diode to be replaced.

[0303] In this solution, at least two discrete characteristic parameters of the electronic component to be replaced are selected, and corresponding tolerances are set for each parameter. Based on this, a primary screening condition is set, which can initially filter out the candidate electronic components that obviously do not meet the requirements and narrow down the selection range. On this basis, the continuous feature similarity is calculated through the characteristic curve and continuous parameter values, comprehensively measuring the matching degree of the candidate component and the original component from both discrete and continuous dimensions. This multi-dimensional and refined screening method can ensure to the greatest extent that the finally selected replacement component highly matches the original component in terms of performance, and even is superior in some key indicators.

[0304] For electronic components such as diodes, this solution comprehensively considers various characteristic parameters and curves, avoiding the limitations of judging only based on a single parameter or simple feature. By accurately calculating various similarities and combining the corresponding weights to obtain the third similarity to determine the final replacement device, it can more accurately identify the appropriate diode model, reduce the replacement errors caused by incorrect model identification, and ensure the normal operation of the components in the equipment.

[0305] The setting of the primary screening condition and the subsequent gradual screening based on different similarities form an orderly and efficient test process. The maintenance personnel do not need to conduct non-discriminatory comprehensive tests on a large number of candidate components, but can quickly exclude the unmatched options according to the steps set in the solution, and focus their energy on the candidate components with high similarity. This greatly shortens the time to find the appropriate replacement component, speeds up the maintenance progress, improves the overall maintenance efficiency, reduces the equipment downtime, and reduces the production losses caused by equipment failures.

[0306] Operations such as setting tolerances for discrete characteristic parameters and setting weights when calculating similarities enable this solution to be flexibly adjusted according to different application scenarios and specific requirements. For key equipment with extremely high performance requirements, smaller tolerances and stricter similarity weights can be set to ensure the high quality of the replacement component; while for some ordinary equipment that is more sensitive to cost, the tolerances and weight settings can be relaxed within a certain range, and more cost-effective replacement components can be selected on the premise of ensuring the basic performance. This flexibility makes this solution applicable to the component replacement scenarios of various electronic devices.

[0307] Embodiment 2:

[0308] Figure 3The structural schematic diagram of an electronic device 10 that can be used to implement the embodiments of the present invention is shown. The electronic device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely examples and are not intended to limit the implementation of the present invention described and / or claimed herein.

[0309] As Figure 3 shown, the electronic device 10 includes at least one processor 11, and a memory communicatively connected to the at least one processor 11, such as a read-only memory (ROM) 12, a random access memory (RAM) 13, etc. The memory stores a computer program executable by the at least one processor. The processor 11 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 12 or the computer program loaded from the storage unit 18 into the random access memory (RAM) 13. In the RAM 13, various programs and data required for the operation of the electronic device 10 can also be stored. The processor 11, the ROM 12, and the RAM 13 are connected to each other through a bus 14. The input / output (I / O) interface 15 is also connected to the bus 14.

[0310] Multiple components in the electronic device 10 are connected to the I / O interface 15, including: an input unit 16, such as a keyboard, a mouse, etc.; an output unit 17, such as various types of displays, speakers, etc.; a storage unit 18, such as a disk, an optical disc, etc.; and a communication unit 19, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 19 allows the electronic device 10 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0311] The processor 11 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the processor 11 include but are not limited to a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processor, controller, microcontroller, etc. The processor 11 executes the various methods and processes described above, such as the method for determining the replacement model of electronic components.

[0312] In some embodiments, the method for determining the replacement model of electronic components can be implemented as a computer program, which is tangibly embodied in a computer-readable storage medium, such as storage unit 18. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device 10 via the ROM 12 and / or the communication unit 19. When the computer program is loaded into the RAM 13 and executed by the processor 11, one or more steps of the method for determining the replacement model of electronic components described above can be executed. Alternatively, in other embodiments, the processor 11 can be configured to execute the method for determining the replacement model of electronic components by any other suitable means (e.g., by means of firmware).

[0313] The various embodiments of the systems and techniques described above in this document can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGA), application specific integrated circuits (ASIC), application specific standard products (ASSP), systems on a chip (SOC), complex programmable logic devices (CPLD), computer hardware, firmware, software, and / or combinations thereof. These various embodiments can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a dedicated or general-purpose programmable processor, and can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit the data and instructions to the storage system, the at least one input device, and the at least one output device.

[0314] The computer programs for implementing the methods of the present invention can be written in any combination of one or more programming languages. These computer programs can be provided to the processor of a general-purpose computer, a dedicated computer, or other programmable data processing devices, such that when the computer programs are executed by the processor, the functions / operations specified in the flowchart and / or block diagram are implemented. The computer programs can be executed entirely on the machine, partially on the machine, as a stand-alone software package partially on the machine and partially on a remote machine, or entirely on a remote machine or server.

[0315] In the context of the present invention, a computer-readable storage medium can be a tangible medium that can contain or store a computer program for use by or in connection with an instruction execution system, apparatus, or device. The computer-readable storage medium can include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. Alternatively, the computer-readable storage medium can be a machine-readable signal medium. More specific examples of the machine-readable storage medium would include an electrical connection based on one or more wires, a portable computer diskette, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or Flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0316] For providing interaction with a user, the systems and techniques described herein can be implemented on an electronic device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the electronic device. Other kinds of devices can also be used for providing interaction with the user; for example, the feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including acoustic input, voice input, or tactile input).

[0317] The systems and techniques described herein can be implemented in a computing system including a backend component (e.g., as a data server), or a computing system including a middleware component (e.g., an application server), or a computing system including a frontend component (e.g., a user computer having a graphical user interface or a web browser through which the user can interact with an implementation of the systems and techniques described herein), or a computing system including any combination of such backend, middleware, or frontend components. The components of the system can be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of the communication network include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0318] A computing system may include a client and a server. The client and the server are generally far from each other and usually interact via a communication network. The client-server relationship is created by computer programs running on respective computers and having a client-server relationship with each other. The server can be a cloud server, also known as a cloud computing server or a cloud host, which is a host product in the cloud computing service system, and solves the defects of difficult management and weak business scalability existing in traditional physical hosts and VPS services.

[0319] Embodiment III:

[0320] This embodiment provides a computer program product, including a computer program, which when executed by a processor, implements any one of the electronic component replacement model determination methods described in Embodiment I. The implementation process and beneficial effects of the method are the same as the corresponding content described in Embodiment I, and the specific content will not be elaborated here.

[0321] Note that the above is only the preferred embodiment of the present invention and the applied technical principle. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein. Various obvious changes, re-adjustments, and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments. Without departing from the concept of the present invention, it may also include more other equivalent embodiments, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for determining a replacement model of an electronic component, characterized in that: include: Selecting at least two discrete characteristic parameters of the electronic component to be replaced, and setting a corresponding tolerance for each of the discrete characteristic parameters, wherein the electronic component to be replaced is an electronic component without a silk-screen mark, and the discrete characteristic parameters are used to numerically characterize characteristic parameters of the electronic component to be replaced, and the values ​​corresponding to the discrete characteristic parameters are determined by measurement; Setting a primary screening condition based on the tolerance, and using the primary screening condition to screen candidate electronic components, includes: For one of the candidate electronic components, if all of the discrete characteristic parameters of the candidate electronic component meet the primary screening condition, the candidate electronic component is retained; otherwise, the candidate electronic component is eliminated; For each candidate electronic component that passes the primary screening condition, calculating a first similarity with the electronic component to be replaced by using a discrete parameter value corresponding to the discrete feature parameter; Selecting at least two characteristic curves of the electronic components to be replaced, wherein the characteristic curves are used to represent performance change trends of the electronic components to be replaced under different working conditions; For the i-th characteristic curve, using the continuous parameter values ​​of the candidate electronic components that have been screened once and corresponding to the characteristic curve, the i-th continuous characteristic similarity is calculated, and the continuous parameter values ​​are the values ​​of the sampling points in the characteristic curve; Calculate the second similarity using all continuous feature similarities and corresponding weights; A third similarity is calculated using the first similarity, the second similarity and the corresponding weights, and a candidate electronic component that can eventually replace the electronic component to be replaced is determined based on the third similarity.

2. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: Setting a filter condition based on the tolerance includes: For one of the discrete feature parameters, the primary screening condition is set as: Based on one of the positive tolerance screening conditions, negative tolerance screening conditions, and bidirectional tolerance screening conditions respectively set corresponding to the positive tolerance, negative tolerance, and bidirectional tolerance in the tolerance.

3. The method for determining the replacement model of an electronic component according to claim 2, characterized in that: The electronic components to be replaced include non-silk-screen diodes; The discrete characteristic parameters include diode forward voltage drop, diode leakage current, diode junction capacitance, diode reverse recovery time, and diode reverse breakdown voltage; The diode forward voltage drop is configured to correspond to the bidirectional tolerance screening condition, the diode leakage current, diode junction capacitance, and diode reverse recovery time are configured to correspond to the negative tolerance screening condition, and the diode reverse breakdown voltage is configured to correspond to the forward tolerance screening condition.

4. The method for determining the replacement model of an electronic component according to claim 3, characterized in that: The positive tolerance screening conditions are: ； The negative tolerance screening conditions are: ； The two-way tolerance screening conditions are: ； In the formula, represents the discrete parameter value of the discrete characteristic parameter corresponding to the candidate electronic component, The discrete parameter value representing the discrete characteristic parameter of the electronic component to be replaced, Indicates the tolerance of the corresponding discrete feature parameter.

5. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: The electronic components to be replaced include non-silk-screen diodes; The characteristic curves include a diode forward voltage drop curve, a diode leakage current curve, and a diode junction capacitance curve; The continuous feature similarity corresponding to the diode forward voltage drop curve and the diode leakage current curve is the Pearson correlation coefficient; The continuous feature similarity corresponding to the diode junction capacitance curve is the root mean square error of the junction capacitance between the electronic component to be replaced and the candidate electronic component.

6. The method for determining the replacement model of an electronic component according to claim 1, characterized in that: Calculating the first similarity with the electronic component to be replaced by using the discrete parameter value corresponding to the discrete feature parameter includes: The first similarity is calculated using a weighted Euclidean calculation formula, where the weighted Euclidean calculation formula is: ； The formula used to calculate the first similarity is: ； In the formula, Indicates distance, represents the first weight corresponding to the i-th discrete feature parameter, represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the electronic component to be replaced, represents the discrete parameter value corresponding to the i-th discrete characteristic parameter of the candidate electronic component, Indicates the first similarity.

7. The method for determining the replacement model of an electronic component according to claim 6, characterized in that: After calculating the distance, the method further includes: correcting the distance; The formula used to correct the distance is: ； The formula used to calculate the first similarity is: ； In the formula, represents the corrected distance, Represents the second weight corresponding to the i-th discrete feature parameter.

8. An electronic device, characterized in that: comprising at least one processor, and a memory communicatively connected to the at least one processor; The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can execute the method for determining a replacement model of an electronic component according to any one of claims 1 to 7.

9. A computer program product, characterized in that The invention comprises a computer program, which, when executed by a processor, implements the method for determining a replacement model of an electronic component according to any one of claims 1 to 7.

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