A semiconductor radiator based on flow velocity control

Abstract

The present invention discloses a semiconductor radiator based on flow velocity control, which includes a water tank and a heat dissipation mechanism at its bottom. A centrifugal water pump is installed inside the water tank, and a liquid cooling structure is arranged at the top of the water tank. The liquid cooling structure includes a contact plate, a contact liquid cooling layer and a heat dissipation sandwich hot plate. The present invention sets a spiral channel to increase the length of the coolant flow path and reduce the flow dead zone. A deceleration spoiler is arranged at the center of the heat source to disturb the flow state of the coolant, making the coolant flow evenly and having enough time to contact the heat dissipation surface to absorb enough heat. At the edge of the hot plate, the coolant is accelerated and disturbed to quickly leave the heat dissipation center with the absorbed heat, greatly improving the heat dissipation efficiency. Based on the cooperation of the flow velocity control structure with the phase change heat conduction sheet and the fin group, while the coolant can take away the heat of the heat source semiconductor device, cyclic cooling is achieved, quickly reaching a stable working state and maintaining long-term stable operation, meeting the use requirements of semiconductor devices that need long-term continuous and stable heat dissipation.

Description

Technical Field

[0001] The present invention relates to the technical field of chip heat dissipation, and more specifically to a semiconductor radiator based on flow rate control. Background Art

[0002] With the continuous progress of semiconductor technology, the integration of chips is getting higher and higher, and the number of transistors has increased significantly. This causes the heat generated by the chips during operation to increase sharply. The operating frequency of the chips is also continuously increasing. For example, the main frequencies of some high-end CPUs have exceeded 5 GHz. High-frequency operations will cause more electrical energy to be converted into heat energy, and the power consumption problem is becoming increasingly prominent. Especially in 5G base stations, the chips need to work stably for a long time in complex outdoor environments, and have high requirements for the reliability and weather resistance of heat dissipation. When the chips generate heat during operation, if this part of the heat is not effectively dissipated, the chip temperature will gradually increase, thereby affecting the use effect and the reliability of the product.

[0003] In the prior art, the processing methods include air-cooled heat dissipation and water-cooled heat dissipation. For air-cooled heat dissipation, highly thermally conductive materials such as metal sheets are attached to the back of the chip. The heat of the motherboard chip is absorbed by the heat conductor and conducted to a group of aluminum sheets or copper sheets with a very large heat dissipation area, and finally the heat is blown away by a fan; for water-cooled heat dissipation, the chip is cooled by the circulation of cooling water. At present, the heat dissipation efficiency of both methods cannot meet the design and use requirements of chips in complex outdoor environments in 5G base stations.

[0004] Therefore, it is necessary to research and develop a semiconductor radiator based on flow rate control to solve the above problems. Summary of the Invention

[0005] The object of the present invention is to provide a semiconductor radiator based on flow rate control for the problems existing in the prior art. By increasing the length of the coolant flow path through the spiral channel, reducing the flow dead zone of the coolant, and the cooperation of the deceleration spoiler, flow rate transition plate, and acceleration spoiler, a deceleration spoiler is set at the center of the heat source to disturb the flow state of the coolant, making the coolant flow evenly and having enough time to contact the heat dissipation surface and absorb enough heat. At the edge of the hot plate, the coolant is accelerated to quickly leave the heat dissipation center with the absorbed heat. Based on the cooperation of the flow rate control structure with the phase change heat conduction sheet and the fin group, while the coolant can take away the heat of the heat source semiconductor device, cyclic cooling is realized to solve the problems proposed in the background art.

[0006] To achieve the above object, the present invention provides the following technical solutions:

[0007] A semiconductor radiator based on flow velocity control, comprising a water tank and a heat dissipation mechanism at the bottom thereof. A centrifugal water pump is installed inside the water tank, and a liquid cooling structure is arranged at the top of the water tank. The liquid cooling structure includes a contact plate, a contact liquid cooling layer and a heat dissipation sandwich plate. The contact plate and the contact liquid cooling layer are integrally arranged, and a lower partition plate is buckled between the contact liquid cooling layer and the heat dissipation sandwich plate. The contact liquid cooling layer includes an annular diversion wall with a spiral channel. Inside the spiral channel, a flow velocity transition plate, a plurality of deceleration spoiler plates and acceleration spoiler plates are arranged to disturb the flow state of the coolant;

[0008] An inlet is arranged at the axis center of the lower partition plate. The output end of the centrifugal water pump is communicated with the inner end of the spiral channel through the inlet. A water storage cavity is arranged at the top of the heat dissipation sandwich plate. A plurality of uniformly distributed sandwich water outlets penetrate through the bottom of the heat dissipation sandwich plate. A sandwich water outlet guide pipe is arranged directly below each sandwich water outlet at the bottom of the heat dissipation sandwich plate. On both sides inside each sandwich water outlet guide pipe, S-shaped diversion walls are arranged. A plurality of diversion acceleration plates are arranged in the channel between the two S-shaped diversion walls on both sides. An outlet penetrates through the surface of the lower partition plate;

[0009] The water tank and the heat dissipation mechanism are detachably installed, and a phase change heat conduction sheet is attached to the water tank part to absorb and conduct the heat of the water tank and the coolant outward.

[0010] Preferably, the spiral channel includes a deceleration channel and an acceleration channel which are communicated with each other. The acceleration channel is provided with concave channels staggered on both sides along its track. The concave channels, the deceleration channel and the acceleration channel are isolated into a spiral cavity structure by a spiral support wall. The acceleration channel surrounds the outermost side of the deceleration channel. The flow velocity transition plate is located at the junction of the deceleration channel and the acceleration channel. A plurality of deceleration spoiler plates are distributed around the deceleration channel. A plurality of acceleration spoiler plates are staggered and distributed in the concave channels on both sides of the acceleration channel. The side of the acceleration spoiler plate away from the spiral support wall is flush with the side wall of the acceleration channel;

[0011] The inner diameter of the flow path of the deceleration channel is larger than that of the acceleration channel. A gap is reserved between the flow velocity transition plate, the deceleration spoiler plate, the acceleration spoiler plate and the spiral support wall.

[0012] Preferably, the outlet is matched with the end of the acceleration channel away from the deceleration channel, and a ramp communicated with the outlet is opened on the surface of the lower partition plate.

[0013] Preferably, the cross-sectional shape of the sandwich water outlet is set as a rectangle, and a triangular slope is arranged at the outer end of the rectangular sandwich water outlet. The plurality of sandwich water outlets are distributed in an annular array;

[0014] The number of the diversion acceleration plates is set to four, and the four diversion acceleration plates are staggered and arranged at the bend nodes of the S-shaped diversion walls.

[0015] Preferably, the heat dissipation mechanism includes a bottom cover plate, a fin group is integrally arranged at the bottom of the bottom cover plate, the bottom cover plate and the bottom of the water tank are detachably installed through a screwing structure, a placement interlayer is formed between the bottom cover plate and the water tank, and the phase change heat conducting sheet is detachably installed in the placement interlayer.

[0016] Preferably, the fin group includes a first concentric circular ring fin, a cross-shaped fin, a second concentric circular ring fin, a fork-shaped fin and a third concentric circular ring fin. The first concentric circular ring fin, the cross-shaped fin, the second concentric circular ring fin, the fork-shaped fin and the third concentric circular ring fin are stacked and integrally arranged in sequence from top to bottom.

[0017] Preferably, the screwing structure includes an inner ring plate and an outer ring plate. The inner ring plate and the outer ring plate are respectively fixed at the bottom of the water tank and the outer side of the top of the bottom cover plate, and an external thread is arranged on the outer side of the inner ring plate, and an internal thread matched with the external thread is arranged on the inner side of the outer ring plate.

[0018] Preferably, a sandblasting layer is arranged on the outer side of the fin group, and gas-phase deposition layers are arranged on the inner surfaces of the spiral channel, the water storage cavity and the S-shaped diversion wall, and the gas-phase deposition layer is made of silicon dioxide.

[0019] The semiconductor radiator further includes a temperature feedback flow rate adjustment system, which includes a hot plate temperature sensor, a water tank temperature sensor and a main board circuit board. The hot plate temperature sensor is embedded at the central position of the top of the contact plate for attaching to and sensing the temperature of the heat source semiconductor device. The water tank temperature sensor is placed inside the water tank for sensing the temperature of the coolant; a real-time temperature display alarm is arranged at the upper edge of the contact plate for real-time displaying the temperature information of the heat source semiconductor device and the coolant, and providing an overheat alarm signal when the heat dissipation limit of the radiator is exceeded;

[0020] An A / D converter and a D / A converter are respectively arranged at the input end and the output end of the main board circuit board, and the hot plate temperature sensor and the water tank temperature sensor are both electrically connected to the A / D converter.

[0021] Preferably, a distribution box is arranged outside the water tank, the main board circuit board is installed in the distribution box, and a power supply group is installed inside the main board circuit board. The main board circuit board is electrically connected to the power supply group. The hot plate temperature sensor and the real-time temperature display alarm are both electrically connected to the main board circuit board through a first electrical connection wire. The water tank temperature sensor is electrically connected to the main board circuit board through a second electrical connection wire. An air vent is arranged on the water tank, and the second electrical connection wire passes through the air vent. The centrifugal water pump is electrically connected to the D / A converter.

[0022] The technical effects and advantages of the present invention:

[0023] By increasing the length of the coolant flow path through the spiral channel, reducing the flow dead zone of the coolant, and coordinating the deceleration spoiler, flow velocity transition plate, and acceleration spoiler, a deceleration spoiler is set at the center of the heat source to disturb the flow state of the coolant, making the coolant flow evenly and having enough time to contact the heat dissipation surface, absorb sufficient heat, and at the edge of the hot plate, the coolant is made to quickly leave the heat dissipation center with the absorbed heat through accelerating the spoiler, greatly improving the heat dissipation efficiency. Based on the cooperation of the flow velocity control structure with the phase change heat conduction sheet and the fin group, while the coolant can take away the heat of the heat source semiconductor device, circulating cooling is achieved, and a stable working state can be quickly reached, maintaining long-term stable operation, meeting the heat dissipation requirements of semiconductor devices that need long-term continuous and stable heat dissipation in 5G base stations, and ensuring the reliability and weather resistance of the device for heat dissipation of semiconductor devices.

[0024] By combining the temperature feedback flow velocity regulation system, using the sensing signals of the hot plate temperature sensor and the water tank temperature sensor, which are fed back to the main board circuit board, and the monitoring data is displayed in real time on the screen of the real-time temperature display alarm, and controlled according to the temperature threshold set in the main board circuit board. Through the built-in control algorithm, the real-time temperature of the hot plate is detected and the pumping intensity of the centrifugal water pump is adjusted in real time. The flow velocity of the coolant is adjusted according to the feedback of the hot plate temperature and the coolant temperature, and an abnormal working warning scheme is set. Under the heat dissipation effect that can be brought about by changing the flow velocity, the heat dissipation efficiency of the highest current temperature is achieved in the case of rapid temperature rise of the semiconductor device, and the energy consumption problem caused by ineffective heat dissipation or excessive heat dissipation is minimized. Brief Description of the Drawings

[0025] Figure 1 It is a first perspective three-dimensional view of the overall structure of the present invention.

[0026] Figure 2 It is a second perspective three-dimensional view of the overall structure of the present invention.

[0027] Figure 3 It is a cross-sectional view of the overall structure of the present invention.

[0028] Figure 4 For the present invention Figure 3 A three-dimensional view of the shown structure.

[0029] Figure 5 It is a first perspective exploded view of the overall structure of the present invention.

[0030] Figure 6 It is a second perspective exploded view of the overall structure of the present invention.

[0031] Figure 7 For the present invention Figure 6 A cross-sectional view of the shown structure.

[0032] Figure 8This is a perspective view of the contact liquid cooling layer in the present invention.

[0033] Figure 9 This is a top view of the contact liquid cooling layer in the present invention.

[0034] Figure 10 This is the schematic diagram of the deceleration working principle of the deceleration spoiler in the present invention.

[0035] Figure 11 This is the schematic diagram of the acceleration working principle of the acceleration spoiler in the present invention.

[0036] Figure 12 This is the schematic diagram of the acceleration working principle of the flow guiding acceleration plate in the present invention.

[0037] Figure 13 This is a perspective view of the split structure of the lower partition board and the heat dissipation sandwich hot plate in the present invention.

[0038] Figure 14 This is the system control flowchart of the temperature feedback flow rate adjustment system in the present invention.

[0039] In the figure:

[0040] 1. Water inlet; 2. Liquid cooling structure; 3. Water outlet; 4. Deceleration spoiler; 5. Acceleration spoiler; 6. Distribution box; 7. Spiral channel; 8. Lower water outlet of the sandwich; 9. Sandwich water outlet diversion pipe; 10. S-shaped flow guiding wall; 11. Water tank; 12. Centrifugal water pump; 13. Placing sandwich; 14. Bottom cover plate; 15. Phase change heat conducting sheet; 16. Fin group; 17. Screwing structure; 18. Hot plate temperature sensor; 19. Heat source semiconductor device; 20. Real-time temperature display alarm; 21. Main board circuit board; 22. Power supply group; 23. First electrical connection line; 24. Second electrical connection line; 25. Water tank temperature sensor;

[0041] 201. Contact plate; 202. Contact liquid cooling layer; 203. Lower partition board; 204. Heat dissipation sandwich hot plate; 205. Annular-shaped flow guiding wall; 206. Flow rate transition plate;

[0042] 900. Flow guiding acceleration plate;

[0043] 111. Ventilation hole;

[0044] 161. First concentric circular fin; 162. Cross-shaped fin; 163. Second concentric circular fin; 164. Fork-shaped fin; 165. Third concentric circular fin. Detailed implementation manners

[0045] The following further describes an embodiment of the present invention with reference to the accompanying drawings:

[0046] Refer to the attached drawings of the specification Figures 1 - 13A semiconductor radiator based on flow rate control is shown, including a water tank 11 and a heat dissipation mechanism at its bottom. A centrifugal water pump 12 is installed inside the water tank 11. The material of the water tank 11 is one of copper, aluminum, and epoxy resin, and the thickness of the bottom layer of the water tank 11 is 1 mm. A liquid cooling structure 2 is provided at the top of the water tank 11. The liquid cooling structure 2 includes a contact plate 201, a contact liquid cooling layer 202, and a heat dissipation sandwich hot plate 204. Among them, the contact plate 201 and the contact liquid cooling layer 202 are integrally provided. A lower partition plate 203 is snap-fitted between the contact liquid cooling layer 202 and the heat dissipation sandwich hot plate 204. The contact liquid cooling layer 202 includes an annular guide wall 205 with a spiral channel 7. Inside the spiral channel 7, a flow rate transition plate 206, a plurality of deceleration spoiler plates 4, and a plurality of acceleration spoiler plates 5 are provided to disturb the flow state of the coolant. In this embodiment, the contact plate 201 is set as a circular plate with a diameter of 200 mm, which is located on the surface of the contact liquid cooling layer 202 and caps it. The contact liquid cooling layer 202 is set as a circle with a diameter of 200 mm. The deceleration spoiler plates 4, the acceleration spoiler plates 5, and the flow rate transition plate 206 are all fixedly connected to the bottom of the contact plate 201.

[0047] An inlet 1 is provided at the center of the lower partition plate 203. The output end of the centrifugal water pump 12 is communicated with the inner end of the spiral channel 7 through the inlet 1. A water storage cavity is provided at the top of the heat dissipation sandwich hot plate 204. A number of evenly distributed sandwich lower water outlets 8 penetrate through the bottom of the heat dissipation sandwich hot plate 204. A sandwich water outlet guide pipe 9 is provided directly below each sandwich lower water outlet 8 at the bottom of the heat dissipation sandwich hot plate 204. Inside both sides of each sandwich water outlet guide pipe 9, an S-shaped guide wall 10 is provided. A plurality of guide acceleration plates 900 are provided in the channel between the two S-shaped guide walls 10 on both sides. An outlet 3 penetrates through the surface of the lower partition plate 203. The contact plate 201, the contact liquid cooling layer 202, the lower partition plate 203, the heat dissipation sandwich hot plate 204, and the sandwich water outlet guide pipe 9 are distributed from top to bottom in sequence. The contact plate 201, the contact liquid cooling layer 202, the lower partition plate 203, the sandwich water outlet guide pipe 9, the flow rate transition plate 206, the deceleration spoiler plates 4, and the acceleration spoiler plates 5 are all made of copper or aluminum.

[0048] The water tank 11 and the heat dissipation mechanism are detachably installed, and a phase change heat conduction sheet 15 is attached to the bottom of the water tank 11 to absorb and conduct the heat of the water tank 11 and the coolant outward.

[0049] Further, as a preferred embodiment of the present invention, the spiral channel 7 includes a deceleration channel and an acceleration channel that communicate with each other. The acceleration channel is provided with concave channels staggered on both sides along its trajectory. The concave channels, the deceleration channel, and the acceleration channel are separated by a spiral support wall into a spiral cavity structure. The acceleration channel surrounds the outermost side of the deceleration channel. The flow velocity transition plate 206 is located at the junction of the deceleration channel and the acceleration channel. A plurality of deceleration spoiler plates 4 are distributed around the deceleration channel, and a plurality of acceleration spoiler plates 5 are staggered and distributed in the concave channels on both sides of the acceleration channel. The side of the acceleration spoiler plate 5 away from the spiral support wall is flush with the side wall of the acceleration channel.

[0050] The inner diameter of the flow channel of the deceleration channel is larger than that of the acceleration channel. A gap is reserved between the flow velocity transition plate 206, the deceleration spoiler plate 4, and the acceleration spoiler plate 5 and the spiral support wall to facilitate the passage of fluid through the channel, forming a plurality of water flows with impact force and disturbing each other.

[0051] The deceleration spoiler plates 4 in the deceleration channel are numbered 401, 402, 403, 404, 405, 406, 407, 408, 409, 410, 411, 412, 413, 414, 415, 416, 417, 418 from the inside to the outside. Among them, the deceleration spoiler plates 4 numbered 401 - 408 are set as hook-shaped flow dividing columns with a length of 14 mm and a height of 4.5 mm. The deceleration spoiler plates 4 numbered 413 - 417 are set as hook-shaped flow dividing columns with a length of 14 mm and a height of 4.25 mm. The deceleration spoiler plate 4 numbered 418 is set as a hook-shaped flow dividing column with a length of 10 mm and a height of 3.25 mm. The deceleration spoiler plates 4 numbered 409 - 412 are set as hook-shaped flow dividing columns with a length of 20 mm and a height of 6.3 mm.

[0052] The acceleration spoiler plates 5 in the acceleration channel are numbered 501, 502, 503, 504, 505, 506, 507, 508, 509, 510, 511, 512, 513, 514, 515, 516, 517, 518, 519, 520 in sequence. Among them, the acceleration spoiler plates 5 numbered 501 - 510 are semi-elliptical flow dividing columns composed of a conical arc with a bottom angle of 79.55° and a top angle of 26.66° and a bottom line with a length of 14.12 mm. The acceleration spoiler plates 5 numbered 511 - 516 are semi-circular hook-shaped flow dividing columns composed of a conical arc with a bottom angle of 87.41° and a top angle of 30.93° and a bottom line with a length of 14 mm. The acceleration spoiler plates 5 numbered 517 - 520 are semi-circular hook-shaped flow dividing columns composed of an outer conical arc with a bottom angle of 26.88° and a top angle of 37.39° and an inner conical arc with a bottom angle of 10.99° and a top angle of 13.87°.

[0053] Based on the structural design of flow velocity control, it is located in the contact liquid cooling layer 202 and the flow guiding and accelerating plate 900. The length of the coolant flow path is greatly increased through the spiral channel 7, the Reynolds number of the fluid is increased, the flow dead zone of the coolant is reduced, the coolant flows evenly and has enough time to contact the heat dissipation surface, taking away a large amount of heat from the heat source semiconductor device 19.

[0054] As Figure 10 shown, the deceleration spoiler 4 is used to hinder the water flow in the main channel and divert it into three directions. Figure 10 The water flow in the channel 2 shown will hinder the forward flow of the water in the channel 3, and the water flow in the channel 3 will hinder the forward flow of the water in the channel 1. In this way, the mutual hindrance disturbance greatly reduces the flow velocity, achieving the deceleration effect. At the same time, the coolant collides with the spiral support wall and the spoiler, the coolant in the channel 3 meets the coolant in the channel 2, and the coolant in the channel 3 meets the coolant in the channel 1, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0055] As Figure 11 shown, through the diversion of the acceleration spoiler 5, the water flow in the Figure 11 main channel shown is diverted into multiple auxiliary channels, such as the auxiliary channel 1, the auxiliary channel 2, and the auxiliary channel 3 shown in Figure 11 . The water flow in each auxiliary channel will assist the water flow in the main channel to accelerate, thus achieving the effect of accelerating the water flow. At the same time, the coolant collides with the spiral support wall and the spoiler, the coolant in the auxiliary channel meets the coolant in the main channel, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0056] Among them, the special structure in the liquid cooling structure 2 can efficiently take away the heat from the contact plate 201. After the coolant enters the contact liquid cooling layer 202 from the center of the circle, it reaches the deceleration effect through a series of deceleration spoilers 4, so as to stay at the center of the heat dissipation surface for enough time to absorb enough heat, and then flow to the edge of the heat dissipation surface and enter the flow velocity acceleration area located at the edge of the heat dissipation plate after passing through the flow velocity transition plate 206, enabling the coolant that has absorbed heat and increased in temperature to quickly leave the heat dissipation surface and enter the sandwich layer below the contact liquid cooling layer 202. In this way, the coolant entering the heat dissipation center achieves the effect of slowly passing through the heat dissipation center, absorbing a large amount of heat, and then accelerating to leave the heat dissipation center.

[0057] Further, as a preferred embodiment of the present invention, the water outlet 3 is matched with the end of the acceleration channel far from the deceleration channel, and a ramp communicating with the water outlet 3 is provided on the surface of the lower partition plate 203.

[0058] Further, as a preferred embodiment of the present invention, the cross-sectional shape of the sandwich water outlet 8 is set to be rectangular, and a triangular slope is provided at the outer end of the rectangular sandwich water outlet 8, and a plurality of sandwich water outlets 8 are distributed in an annular array.

[0059] The number of the flow guiding and accelerating plates 900 is set to four, and the four flow guiding and accelerating plates 900 are staggeredly arranged at the bend nodes of the S-shaped flow guiding wall 10. In this embodiment, the number of the interlayer water inlets 8 is set to 16, which are sequentially numbered as 801, 802, 803, 804, 805, 806, 807, 808, 809, 810, 811, 812, 813, 814, 815, 816. The interlayer water inlets 8 numbered 801-808 are annularly arrayed in the outer layer with the axis of the heat dissipation interlayer hot plate 204 as the center, and the remaining interlayer water inlets 8 are annularly arrayed in the inner layer with the axis of the heat dissipation interlayer hot plate 204 as the center. The included angle between the axis connection lines of two adjacent interlayer water inlets 8 in the outer layer and the axis of the heat dissipation interlayer hot plate 204 is 45°; the included angle between the axis connection lines of two adjacent interlayer water inlets 8 in the inner layer and the axis of the heat dissipation interlayer hot plate 204 is 45°, and the interlayer water inlets 8 in the outer layer and the interlayer water inlets 8 in the inner layer are staggeredly distributed.

[0060] As Figure 3 shown, the number of the flow guiding and accelerating plates 900 is set to four, which are sequentially numbered as 901, 902, 903, 904. The flow guiding and accelerating plates 900 corresponding to the numbers 901-904 are staggeredly arranged at the bend nodes of the S-shaped flow guiding wall 10.

[0061] The coolant enters the interlayer of the contact liquid cooling layer 202, playing a role of buffering and cooling. The coolant entering the interlayer flows through the water outlet 3 and the interlayer water inlets 8 and quickly returns to the water tank 11 through the flow guiding and accelerating plates 900 for re-cooling, forming a circulating path of the coolant. The acceleration effect is as Figure 12 shown. Through the diversion of the flow guiding and accelerating plates 900, Figure 12 the water flow in the main channel in Figure 12 is led out into multiple auxiliary flow channels, such as the auxiliary flow channel 1, the auxiliary flow channel 2, the auxiliary flow channel 3, and the auxiliary flow channel 4 shown in

[0062] Each water flow in each auxiliary flow channel will assist the water flow in the main flow channel to accelerate the flow, thus achieving the effect of accelerating the water flow; at the same time, the coolant collides with the S-shaped flow guiding wall 10 and the flow guiding and accelerating plates 900, and the coolant in the auxiliary flow channel meets the coolant in the main flow channel, disturbing the flow state of the coolant and increasing the heat dissipation capacity.

[0063] Furthermore, as a preferred embodiment of the present invention, the heat dissipation mechanism includes a bottom cover plate 14, which is made of one of copper, aluminum, and epoxy resin. A fin group 16 is integrally provided at the bottom of the bottom cover plate 14, and the fin group 16 is made of one of copper, aluminum, and epoxy resin, such as an anodized process material including anodized aluminum and anodized copper. The bottom cover plate 14 is detachably installed with the bottom of the water tank 11 through a screwing structure 17, a placement interlayer 13 is formed between the bottom cover plate 14 and the water tank 11, and the phase change heat conducting sheet 15 is detachably installed in the placement interlayer 13; the phase change heat conducting sheet 15 has a thickness of 2-3 mm and is made of silicone grease or Honeywell PTM7950 material, which not only has low cost but also has good heat conduction effect.

[0064] Furthermore, as a preferred embodiment of the present invention, the fin group 16 includes a first concentric circular fin 161, a cross-shaped fin 162, a second concentric circular fin 163, a fork-shaped fin 164, and a third concentric circular fin 165. The first concentric circular fin 161, the cross-shaped fin 162, the second concentric circular fin 163, the fork-shaped fin 164, and the third concentric circular fin 165 are stacked and integrally provided in sequence from top to bottom. The thicknesses of the first concentric circular fin 161, the cross-shaped fin 162, the second concentric circular fin 163, the fork-shaped fin 164, and the third concentric circular fin 165 are all set to 3 mm. Air flow channels are provided between the first concentric circular fin 161, the second concentric circular fin 163, and the third concentric circular fin 165. The staggered stacking structure increases the contact area with air and has strong perturbation in the gas flow direction and the direction perpendicular to the flow direction, which can improve the uniformity of the flow.

[0065] The fin group 16 cooperates with the phase change heat conducting sheet 15 to timely absorb the temperature of the coolant in the water tank 11. The phase change heat conducting sheet 15 undergoes a phase change when heated, changing from a solid to a liquid. Then, in this process, it will absorb a large amount of heat, which can promote the transfer of the temperature inside the water tank 11 and achieve the purpose of cooling the coolant, thereby improving the heat dissipation efficiency of the coolant itself.

[0066] The coolant in the water tank 11 can be replaced. The water tank 11 is set as a detachable structure, and the water tank 11 can be removed to replace the coolant. Furthermore, an external circulation system can be set to participate in the cooling, and the coolant is circulated and cooled by a circulation pump and a cooling mechanism.

[0067] Further, as a preferred embodiment of the present invention, the screwing structure 17 includes an inner ring plate and an outer ring plate. The inner ring plate and the outer ring plate are respectively fixed to the bottom of the water tank 11 and the outer side of the top of the bottom cover plate 14. An external thread is provided on the outer side of the inner ring plate, and an internal thread matching the external thread is provided on the inner side of the outer ring plate. The screwing of the bottom of the water tank 11 and the bottom cover plate 14 is realized through the cooperation of the inner ring plate and the outer ring plate, which is convenient for replacing the failed phase change heat conducting sheet 15. The phase change heat conducting sheet 15 located below the water tank 11 can reduce the air thermal resistance so as to optimize heat transfer. The phase change heat conducting sheet 15 can quickly transfer the heat brought by the coolant in the water tank 11 to the lower fin group 16, reduce the temperature of the coolant, and then the phase change heat conducting sheet 15 keeps the coolant in the water tank 11 at a lower temperature to achieve continuous and stable cooling and heat dissipation.

[0068] Further, as a preferred embodiment of the present invention, a sandblasting layer is provided on the outer side of the fin group 16. The sandblasting layer is made of one of silicon carbide, mullite sand, emery, and alumina, and has a thickness of 0.5 - 1 mm. Gas deposition layers are provided on the inner surfaces of the spiral channel 7, the water storage cavity, and the S-shaped diversion wall 10, and the gas deposition layer is made of silicon dioxide material. The gas deposition layer is formed by plasma enhanced chemical vapor deposition, and the deposition material is one of silicon nitride, silicon dioxide, and alumina, and the thickness of the gas deposition layer is 0.5 - 0.8 mm.

[0069] Refer to the attached Figures 1 - 14 As shown in the figure, the semiconductor radiator further includes a temperature feedback flow rate adjustment system, which includes a hot plate temperature sensor 18, a water tank temperature sensor 25, and a main board circuit board 21. The hot plate temperature sensor 18 is embedded at the central axis position of the top of the contact plate 201 for attaching to and sensing the temperature of the heat source semiconductor device 19. The water tank temperature sensor 25 is placed inside the water tank 11 for sensing the coolant temperature; a real-time temperature display alarm 20 is provided at the upper edge of the contact plate 201 for real-time displaying the temperature information of the heat source semiconductor device 19 and the coolant, and providing an overheat alarm signal when the heat dissipation limit of the radiator is exceeded.

[0070] An A / D converter and a D / A converter are respectively provided at the input end and the output end of the main board circuit board 21. The hot plate temperature sensor 18 and the water tank temperature sensor 25 are both electrically connected to the A / D converter.

[0071] Further, as a preferred embodiment of the present invention, a distribution box 6 is provided outside the water tank 11. The main board circuit board 21 is installed in the distribution box 6, and a power supply group 22 is installed inside the main board circuit board 21. The main board circuit board 21 is electrically connected to the power supply group 22. The hot plate temperature sensor 18 and the real-time temperature display alarm 20 are both electrically connected to the main board circuit board 21 through a first electrical connection line 23. The water tank temperature sensor 25 is electrically connected to the main board circuit board 21 through a second electrical connection line 24. An air vent 111 is provided on the water tank 11. The air vent 111 is located at the top of the side wall of the water tank 11, forming a rectangular notch on its outer wall, and the second electrical connection line 24 passes through the air vent 111. The centrifugal water pump 12 is electrically connected to the D / A converter. The pumping intensity of the centrifugal water pump 12 is controlled by the main board circuit board 21 according to the sensed temperature of the hot plate temperature sensor 18. The air vent 111 penetrates the side wall of the water tank 11 to make its inside and outside communicate, so as to ensure the normal flow of water while leading out the power supply wire of the water pump; the water tank 11 adopts a detachable combined structure, which is convenient for adding or replacing different coolants, making the heat dissipation device easy to install and overhaul. The hot plate temperature sensor 18 is located at the center of the circular surface of the contact plate 201, and a miniature platinum resistance temperature sensor is adopted, and its wiring is inside the plate.

[0072] The sensed signals of the hot plate temperature sensor 18 and the water tank temperature sensor 25 are fed back to the main board circuit board 21, and the monitoring data is displayed in real time on the screen of the real-time temperature display alarm 20. According to the temperature threshold set in the main board circuit board 21, control is carried out, and the real-time temperature of the hot plate is detected and the pumping intensity of the centrifugal water pump 12 is adjusted in real time through the built-in control algorithm. The specific functions of the system are as follows.

[0073] When the hot plate temperature sensor 18 detects that the temperature exceeds the emergency cooling temperature opening value set by the user, it enters the emergency cooling working state. This working state includes the following three situations:

[0074] Situation 1: The temperature increase rate monitored and fed back by the hot plate temperature sensor 18 is positive and increasing. At this time, the power of the centrifugal water pump 12 is continuously increased to increase its pumping intensity, reduce the temperature difference between the coolant and the hot plate, and accelerate the heat dissipation of the hot plate.

[0075] Situation 2: The temperature increase rate monitored and fed back by the hot plate temperature sensor 18 is zero, or positive and decreasing. At this time, the power of the centrifugal water pump 12 is controlled to keep its pumping intensity unchanged. At this pumping intensity, the flow rate of the coolant is fast, providing the most efficient heat exchange efficiency for the currently rapidly heating heat source semiconductor device 19. Once the temperature increase rate continues to increase, it enters the working state of Situation 1.

[0076] Scenario three: the temperature growth rate monitored and fed back by the hot plate temperature sensor 18 is negative, and the power of the centrifugal water pump 12 is controlled to continuously reduce its pumping intensity, so that the coolant can fully contact the hot plate, taking away enough heat to improve the heat dissipation efficiency while reducing power consumption. At this time, once the temperature growth rate working state changes due to the reduction in the pumping intensity of the centrifugal water pump 12, it will immediately enter the working state of the corresponding situation.

[0077] When the temperature of the hot plate is below the emergency cooling temperature set by the user, the system is in normal working state; the normal working state and abnormal heat dissipation state conditions and treatment measures of the system are as follows:

[0078] Normal working state (ie, normal working state): when the temperature drops below the set emergency cooling temperature opening value, the centrifugal water pump 12 is controlled to reduce the pumping intensity to the minimum. At this time, the heat dissipation efficiency can ensure the normal and stable operation of the semiconductor device.

[0079] Abnormal heat dissipation state: When the system detects that the temperature of the coolant exceeds the hot plate temperature or exceeds the maximum coolant temperature value set by the user, the system controls the real-time temperature display alarm 20 to issue an alarm to the user. At this time, the user can choose to replace the coolant, or stop the abnormal operation of the heat source semiconductor device 19 and take a series of measures to deal with it.

[0080] The system adjusts the flow rate of the coolant according to the feedback of the hot plate temperature and the coolant temperature, and sets an abnormal operation warning scheme. Since then, under the heat dissipation effect brought by changing the flow rate, the highest heat dissipation efficiency at the current temperature is achieved when the heat source semiconductor device 19 heats up rapidly, and the energy loss caused by ineffective heat dissipation or excessive heat dissipation is minimized.

[0081] Finally: The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor heat sink based on flow rate control, comprising a water tank (11) and a heat dissipation mechanism at the bottom thereof, wherein a centrifugal water pump (12) is installed inside the water tank (11), characterized in that: A liquid cooling structure (2) is arranged on the top of the water tank (11), and the liquid cooling structure (2) comprises a contact plate (201), a contact liquid cooling layer (202), and a heat dissipation sandwich hot plate (204), wherein the contact plate (201) and the contact liquid cooling layer (202) are arranged integrally, and a lower partition plate (203) is arranged between the contact liquid cooling layer (202) and the heat dissipation sandwich hot plate (204), and the contact liquid cooling layer (202) comprises a quasi-annular guide wall (205) with a spiral channel (7), and a flow velocity transition plate (206), a plurality of deceleration spoilers (4), and a plurality of acceleration spoilers (5) are arranged inside the spiral channel (7) for disturbing the flow state of the cooling liquid; A water inlet (1) is provided at the axis of the lower baffle (203); the output end of the centrifugal water pump (12) is connected to the inner end of the spiral channel (7) through the water inlet (1); a water storage cavity is provided at the top of the heat dissipation sandwich hot plate (204); a plurality of evenly distributed sandwich water outlets (8) are penetrated through the bottom of the heat dissipation sandwich hot plate (204); a sandwich water outlet guide pipe (9) is provided at the bottom of the heat dissipation sandwich hot plate (204) and directly below each sandwich water outlet (8); each sandwich water outlet guide pipe (9) is provided with S-shaped guide walls (10) on both sides of the interior; a plurality of guide acceleration plates (900) are provided in the channel between the S-shaped guide walls (10) on both sides; and a water outlet (3) is penetrated through the surface of the lower baffle (203); The heat dissipation mechanism is detachably mounted on the bottom of the water tank (11), and a phase-change heat conducting sheet (15) is fitted on the bottom of the water tank (11) for absorbing and conducting heat of the water tank (11) and the coolant to the outside.

2. A semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The spiral channel (7) comprises a deceleration channel and an acceleration channel which are interconnected, wherein the acceleration channel has inner concave channels arranged alternately on both sides along its trajectory, and the inner concave channels, the deceleration channel and the acceleration channel are separated into a spiral cavity structure by a spiral support wall, the acceleration channel surrounds the outermost side of the deceleration channel, the flow velocity transition plate (206) is located at the junction of the deceleration channel and the acceleration channel, a plurality of deceleration spoilers (4) are arranged around the deceleration channel, a plurality of acceleration spoilers (5) are arranged alternately in the inner concave channels on both sides of the acceleration channel, and the side of the acceleration spoiler (5) away from the spiral support wall is arranged flush with the side wall of the acceleration channel; The inner diameter of the flow channel of the deceleration channel is greater than the inner diameter of the flow channel of the acceleration channel, and a gap is reserved between the flow velocity transition plate (206), the deceleration spoiler (4), the acceleration spoiler (5) and the spiral support wall.

3. A semiconductor heat sink based on flow rate control according to claim 2, characterized in that: The water outlet (3) matches an end of the acceleration channel away from the deceleration channel, and a ramp communicating with the water outlet (3) is provided on the surface of the lower partition plate (203).

4. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The cross-sectional shape of the sandwich drain port (8) is set to be rectangular, and the outer end of the rectangular sandwich drain port (8) is provided with a triangular slope, and a plurality of the sandwich drain ports (8) are distributed in a ring array; The number of the guide acceleration plates (900) is set to four, and the four guide acceleration plates (900) are arranged in a staggered manner at the bend nodes of the S-shaped guide wall (10).

5. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: The heat dissipation mechanism comprises a bottom cover plate (14), a fin group (16) is integrally provided at the bottom of the bottom cover plate (14), the bottom cover plate (14) and the bottom of the water tank (11) are detachably mounted via a screw-on structure (17), a placement interlayer (13) is formed between the bottom cover plate (14) and the water tank (11), and a phase change heat conductive sheet (15) is detachably mounted in the placement interlayer (13).

6. A semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The fin group (16) comprises a first concentric circular ring fin (161), a cross-shaped fin (162), a second concentric circular ring fin (163), a fork-shaped fin (164) and a third concentric circular ring fin (165); the first concentric circular ring fin (161), the cross-shaped fin (162), the second concentric circular ring fin (163), the fork-shaped fin (164) and the third concentric circular ring fin (165) are stacked in sequence from top to bottom and arranged integrally.

7. The semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The screw-on structure (17) comprises an inner ring plate and an outer ring plate, the inner ring plate and the outer ring plate being respectively fixed to the bottom of the water tank (11) and the outside of the top of the bottom cover plate (14), and the outer side of the inner ring plate is provided with an external thread, and the inner side of the outer ring plate is provided with an internal thread matching the external thread.

8. The semiconductor heat sink based on flow rate control according to claim 5, characterized in that: The outer side of the fin group (16) is provided with a sandblasting layer, and the inner surfaces of the spiral channel (7), the water storage cavity and the S-shaped guide wall (10) are all provided with a vapor deposition layer, and the vapor deposition layer is made of silicon dioxide.

9. The semiconductor heat sink based on flow rate control according to claim 1, characterized in that: It also includes a temperature feedback flow rate regulation system, which includes a hot plate temperature sensor (18), a water tank temperature sensor (25) and a main board circuit board (21); the hot plate temperature sensor (18) is embedded at the top axis position of the contact plate (201) and is used to fit and sense the temperature of the heat source semiconductor device (19); the water tank temperature sensor (25) is placed inside the water tank (11) and is used to sense the temperature of the coolant; a real-time temperature display alarm (20) is provided at the upper edge of the contact plate (201) and is used to display the temperature information of the heat source semiconductor device (19) and the coolant in real time, and to provide an overheat alarm signal; An A / D converter and a D / A converter are respectively provided at the input end and the output end of the main circuit board (21), and the hot plate temperature sensor (18) and the water tank temperature sensor (25) are both electrically connected to the A / D converter.

10. The semiconductor heat sink based on flow rate control according to claim 9, characterized in that: A distribution box (6) is arranged outside the water tank (11), a main board circuit board (21) is installed in the distribution box (6), and a power supply group (22) is installed inside the main board circuit board (21), the main board circuit board (21) and the power supply group (22) are electrically connected, the hot plate temperature sensor (18) and the real-time temperature display alarm (20) are both electrically connected to the main board circuit board (21) via a No. 1 electrical connection line (23), the water tank temperature sensor (25) is electrically connected to the main board circuit board (21) via a No. 2 electrical connection line (24), a vent hole (111) is provided on the water tank (11), and the No. 2 electrical connection line (24) passes through the vent hole (111), and the centrifugal water pump (12) is electrically connected to the D / A converter.

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