Array substrate, method for manufacturing array substrate, and display panel

Abstract

The application provides an array substrate, a preparation method of the array substrate and a display panel, and relates to the technical field of display. The array substrate comprises a substrate, a thin film transistor layer formed on the substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer, and the gas absorption layer can absorb the gas released by the organic insulating layer. The technical scheme provided by the application can improve the product yield of the array substrate.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an array substrate, a preparation method of the array substrate and a display panel. BACKGROUND

[0002] With the rapid development of display technology, users have higher and higher requirements for the picture performance of display panels. Thin film transistors (TFT) are key components in display devices, and the requirements for the typical performance and stability of thin film transistors are also improved.

[0003] As an active layer material, a thin film transistor with metal oxide has good current output characteristics, low leakage current and higher electron mobility than amorphous silicon thin film transistors. The thin film transistor with indium gallium zinc oxide (IGZO) as an active layer has become a mainstream driving element in display panels.

[0004] In the preparation of an array substrate based on IGZO technology, an organic film is usually used as an insulating layer on the IGZO active layer to improve the stability of the thin film transistor. However, under certain conditions such as high temperature environment, the organic film layer will slowly release small molecular carbon oxide gas inside. When the gas accumulates, the film layer will swell or even fall off, reducing the product yield of the array substrate. SUMMARY

[0005] Therefore, the present application provides an array substrate, a preparation method of the array substrate and a display panel to improve the product yield of the array substrate.

[0006] To achieve the above-mentioned purpose, in a first aspect, an embodiment of the present application provides an array substrate, which comprises: a substrate, a thin film transistor layer formed on the substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer, wherein the gas absorption layer can absorb the gas released by the organic insulating layer.

[0007] By forming a gas absorption layer above the organic insulating layer, the gas released by the organic insulating layer can be absorbed, and the film layer falling off can be reduced, thereby improving the product yield of the array substrate.

[0008] In a possible implementation of the first aspect, the gas absorption layer comprises a foamed material layer and a felt-like spinning layer which are stacked.

[0009] Through the above-mentioned embodiments, the foamed material layer can absorb the gas of the organic insulating layer and form bubbles, the felt-like spun layer has a large number of voids, and the bubbles can be fixed and shaped in the felt-like spun layer, so that the effect of absorbing the escaped gas can be realized on the basis that the film layer thickness of the foamed material layer and the felt-like spun layer does not change. In addition, since the foamed material layer and the felt-like spun layer have a certain softness, the cushioning capability of the array substrate can also be improved.

[0010] In a possible implementation of the first aspect, the foamed material layer is formed on the organic insulating layer by an inkjet printing or printing process.

[0011] By using the inkjet printing or printing process to form the foamed material layer, the preparation efficiency of the foamed material layer can be improved.

[0012] In a possible implementation of the first aspect, the felt-like spun layer is formed on the foamed material layer by an electrostatic stretching spinning method.

[0013] By using the electrostatic stretching spinning method to form the felt-like spun layer, the preparation efficiency of the felt-like spun layer can be improved.

[0014] In a possible implementation of the first aspect, the foamed material layer comprises one or more of plastic, rubber, a catalyst, a foam stabilizer, and a foaming agent.

[0015] In a possible implementation of the first aspect, the felt-like spun layer comprises one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning, and poly-p-phenylene terephthalamide spinning.

[0016] Through the above-mentioned embodiments, since the preparation materials of the foamed material layer and the felt-like spun layer comprise multiple kinds, the reliability of the prepared foamed material layer and the felt-like spun layer can be improved.

[0017] In a possible implementation of the first aspect, a first inorganic layer is formed between the thin film transistor layer and the organic insulating layer, and a second inorganic layer is further covered above the gas absorption layer.

[0018] By forming the first inorganic layer, the adhesion between the thin film transistor layer and the film layer above it can be improved, so that the durability and stability of the thin film transistor can be improved. By forming the second inorganic layer, on the one hand, the film adhesion between the gas absorption layer and the second inorganic layer can be improved, and on the other hand, the second inorganic layer can also play a role of encapsulation and compression for the gas absorption layer, which is convenient for subsequent deposition and preparation of a metal layer or other film layer on the second inorganic layer.

[0019] In a second aspect, the embodiments of the present application provide a preparation method of an array substrate, which is used for preparing the array substrate of the first aspect or any of the embodiments of the first aspect. The method comprises:

[0020] forming a thin film transistor layer on the substrate;

[0021] forming an organic insulating layer on the thin film transistor layer;

[0022] forming a gas absorption layer on the organic insulating layer, the gas absorption layer being used for absorbing the gas released by the organic insulating layer.

[0023] In a possible implementation manner of the second aspect, the forming of the gas absorption layer on the organic insulating layer comprises:

[0024] forming a foamed material layer on the organic insulating layer;

[0025] forming a felt-like spinning layer on the foamed material layer.

[0026] In a possible implementation manner of the second aspect, a first inorganic layer is formed between the thin film transistor layer and the organic insulating layer, and a second inorganic layer is formed above the gas absorption layer.

[0027] In a third aspect, the embodiments of the present application provide a display panel, which comprises the array substrate of the first aspect or any of the embodiments of the first aspect, an opposite substrate, and a display medium layer arranged between the array substrate and the opposite substrate.

[0028] The array substrate, the preparation method of the array substrate and the display panel provided by the embodiments of the present application can improve the product yield of the array substrate. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 a curve diagram of a thermal gravimetric experiment provided by the embodiments of the present application;

[0030] Figure 2 a schematic diagram of the peeling of a PFA film layer provided by the embodiments of the present application;

[0031] Figure 3 a structure schematic diagram of a gas detection device provided by the embodiments of the present application;

[0032] Figure 4 a structure schematic diagram of an array substrate provided by the embodiments of the present application;

[0033] Figure 5 A structure schematic diagram of a gas absorption layer provided by an embodiment of the present application is shown in FIG. 3.

[0034] Figure 6 A process schematic diagram of gas absorption by a gas absorption layer provided by an embodiment of the present application is shown in FIG. 4.

[0035] Figure 7 A flow schematic diagram of a method for preparing an array substrate provided by an embodiment of the present application is shown in FIG. 5.

[0036] Figure 8 A structure schematic diagram of a bottom-gate thin film transistor provided by an embodiment of the present application is shown in FIG. 6.

[0037] Figure 9 A structure schematic diagram of a top-gate thin film transistor provided by an embodiment of the present application is shown in FIG. 7.

[0038] Figure 10 A flow schematic diagram of a method for preparing a gas absorption layer provided by an embodiment of the present application is shown in FIG. 8.

[0039] Figure 11 A structure schematic diagram of a display panel provided by an embodiment of the present application is shown in FIG. 9.

[0040] Explanation of reference signs:

[0041] 10 - headspace assembly; 11 - headspace vial; 12 - adsorption tube; 20 - gas analysis assembly; 21 - chromatographic column; 22 - gas chromatograph detector; 23 - mass spectrometer detector; 24 - signal analyzer;

[0042] 30 - substrate substrate; 31 - thin film transistor layer; 311 - gate layer; 312 - gate insulating layer; 313 - active layer; 314 - source / drain layer; 315 - light shielding layer; 316 - buffer layer;

[0043] 32 - organic insulating layer; 33 - gas absorption layer; 331 - foamed material layer; 332 - felt-like spun layer; 34 - first inorganic layer; 35 - second inorganic layer; 36 - pixel electrode layer;

[0044] 100 - array substrate; 200 - counter substrate; 300 - display medium layer. DETAILED DESCRIPTION

[0045] The embodiments of the present application will be described below in conjunction with the accompanying drawings. The terms used in the embodiment part of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. The following specific embodiments can be combined with each other, and the same or similar concepts or processes can not be described in some embodiments.

[0046] In the array substrate, the metal oxide as the thin film transistor of the active layer is widely concerned by the display industry due to its large ion migration rate and small leakage current. Indium gallium zinc oxide (IGZO) as a high-performance transparent conductive oxide is often used in display technology to improve the transparency and conductivity of the thin film transistor.

[0047] Taking the thin film transistor prepared by the IGZO material as an example, the preparation of the thin film transistor needs to be carried out in a high-temperature and chemically corrosive environment, which puts higher requirements on the performance reliability of the thin film transistor. In the related technology, the organic film layer (which can also be called an organic insulating layer or an organic planar layer) is usually used in combination with the IGZO material. The material of the organic film layer can include polyfluoroalkoxy (PFA), polyimide, and benzocyclobutene, etc.

[0048] Taking the PFA as an example, the main components of the PFA film layer can include a high molecular resin, a photosensitive substance, an additive, and a solvent. Among them, the high molecular resin as the main component of the PFA film layer can have good heat curing characteristics, film forming properties, and alkali solubility when the PFA is a positive photoresist. The photosensitive substance can include a photosensitive compound for realizing alkali solubility reversal. When the PFA is a negative photoresist, the high molecular resin can have the above characteristics and also has the light curing characteristics, so that after light irradiation, the chemical change can occur rapidly in a short time to form a cross-linked and cured oligomer.

[0049] The photosensitive substance can include a photoinitiator which can generate free radicals to initiate light curing. In addition, when the PFA is a negative photoresist, the PFA can also include a multifunctional monomer for further improving the light curing characteristics of the PFA. The additive can include a tackifier and a surface leveling agent, and the solvent can improve the solubility, uniformity and leveling property of the above-mentioned materials.

[0050] The PFA has good wear resistance and corrosion resistance. Covering the PFA film layer on the thin film transistor as an organic insulating layer can effectively improve the stability of the thin film transistor and the performance of the product.

[0051] The PFA film layer can release various organic gas products during the OVEN process stage and the subsequent use stage, thereby causing weight loss. Taking the thermal gravimetric experiments of two kinds of negative PFA materials of DuPont IRIS-510S and Dongjin DN2900L as examples, in the experiment, DuPont IRIS-510S is used as the main material, and Dongjin PFA is used as the competitor. The thermal gravimetric experiment results can be as shown in Figure 1 Figure 1 ​At the temperature of 50℃, the two materials have begun to have a slight weight loss phenomenon (Weight drop), and when the temperature is higher than 200℃, the weight loss phenomenon of the two materials continues, which proves that the PFA material decomposes at high temperature and produces gas products.

[0052] After the gas product escapes from the PFA film layer, it will move freely and directionally in the adjacent film layer, and when the amount of gas reaches a certain level, it will make the film layer bulge or even fall off, see Figure 2 This falling phenomenon is more obvious in the lower layer of the PFA film layer, which is a metal with poor adhesion or a PFA film layer with a thin area. Once the film layer falls off, the product yield and service life of the entire array substrate will be reduced.

[0053] In order to determine the type of gas released by PFA at high temperature, a gas detection device as shown in Figure 3 The gas detection device can use headspace-GC / MS method for gas analysis, which can include headspace assembly 10 and gas phase analysis assembly 20. The test sample material can be PFA (35000A) / Si, Si is the carrier of the sample PFA, and the sample size is 5cm square.

[0054] When performing gas detection, the PFA material can be placed in the headspace bottle 11 for pretreatment. The pretreatment step is to preheat the sample for 100s at a temperature of 105℃, and then expose the sample to light with an exposure of 23mj to simulate the conditions of preparing the PFA film layer. Then, the sample is heated at a temperature of 240℃ for 40min to simulate the effect of temperature on the PFA film layer when preparing other film layers. The adsorption tube 12 can be filled with adsorbent material, and the gas generated by the headspace bottle 11 can be concentrated in the adsorption tube 12 after the pipeline to facilitate subsequent gas phase analysis. The gas generated by the headspace assembly 10 is separated by the chromatographic column 21, detected by the gas chromatograph detector 22, identified by the mass spectrometer detector 23, and recorded and analyzed by the signal analyzer 24, so as to obtain the gas composition.

[0055] Table 1 is the main gas composition table provided by the embodiment of the present application. As shown in Table 1, after the PFA material is heated and baked, various organic intermediates and monomer organic substances will escape, and the main release temperature is above 150℃. In actual process, the temperature of PFA OVEN process has reached about 200℃, and the generated gas will gather at the adjacent film layer, which will inevitably affect the stability between the film layer structures.

[0056] Table 1

[0057]

[0058] In view of this, embodiments of this application provide an array substrate that can improve the product yield of the array substrate. Figure 4 This is a schematic diagram of the array substrate provided in an embodiment of this application. Figure 4 As shown, the array substrate may include a substrate 30, a thin film transistor layer 31 formed on the substrate 30, an organic insulating layer 32 covering the thin film transistor layer 31, and a gas absorption layer 33 formed above the organic insulating layer 32. The gas absorption layer 33 is capable of absorbing the gas released by the organic insulating layer 32.

[0059] The substrate 30 can be a glass substrate, a flexible plastic substrate, or a silicon substrate, etc. The thin-film transistor layer 31 can include a plurality of thin-film transistors (not shown), each of which can be composed of a plurality of film layers. Taking a bottom gate structure as an example, the thin-film transistor can exemplary include a gate layer formed on the substrate, a gate insulating layer covering the gate layer, an active layer formed on the gate insulating layer, and a source-drain layer.

[0060] The gate layer and source / drain layers can be made of metal to facilitate the transmission of drive signals. The gate insulating layer isolates the charge between the gate layer and the source / drain layers, preventing reverse current and leakage current. This layer can be made of inorganic materials, such as silicon oxide or silicon nitride. The thickness of the gate layer, gate insulating layer, and source / drain layers can range from 2000 to 6000 angstroms. The active layer can control the current between the source and drain by the voltage on the gate layer; this layer can be made of metal oxides such as IGZO.

[0061] Figure 5 This is a schematic diagram of the gas absorption layer provided in an embodiment of this application. (See attached diagram.) Figure 5 The gas absorption layer 33 may include a foamed material layer 331 and a felt-like spun layer 332 stacked together. The foamed material layer 331 may be disposed above the organic insulating layer 32 and in contact with the organic insulating layer 32.

[0062] The foamed material layer 331 can be formed on the organic insulating layer 32 using inkjet printing or printing processes to improve preparation efficiency. The thickness can be 500-1500 angstroms. Here, foamed material refers to a substance that can vaporize inside a material to generate bubbles, making it a porous material. Flexible foamed materials use plastics (such as polyethylene, ethylene-vinyl acetate copolymer, etc.), rubber (such as styrene-butadiene rubber, neoprene rubber, etc.), elastomers, or natural polymers as the polymer matrix, and add catalysts, foam stabilizers, foaming agents, and other auxiliary materials to form a foam gel.

[0063] For example, the polyurethane foaming gel can be formed by physical foaming or cross-linking foaming, so that the polymer matrix can generate a large number of fine bubbles after absorbing the gas, the volume is increased, and the density is reduced. The catalyst can be selected from the amine or oxide catalysts of Wincell, so that the foaming can be carried out at room temperature and the polyurethane foaming gel can be converted. The content of the catalyst can be 0.5% to 1% of the total mass of the foaming material, so that the service life of the foaming material layer 331 for absorbing the escaped gas can be prolonged, and the foaming material layer 331 can still absorb the gas after the preparation of the array substrate is completed. Of course, the specific content can also be selected according to actual needs.

[0064] By using the foaming material, not only the gas escaped from the organic insulating layer 32 can be absorbed, but also the buffer capacity of the array substrate can be improved. In addition, because the foaming material layer 331 has the characteristics of light weight, good softness and low density, the etching efficiency of the etching process can be improved when dry etching is performed. The gas for dry etching can use the prior art, and the embodiments of the present application will not be repeated here.

[0065] The felt-like spun layer 332 can be formed on the foaming material layer 331 by electrostatic stretching spinning to improve the preparation efficiency, and the thickness can be 2500-3500 angstroms. The felt-like spun layer 332 has a large number of voids. For example, a polymer solution or melt can be jetted and stretched under the action of static electricity to form a fine stream, and the solvent in the fine stream can be evaporated or solidified during the jetting process, so that the fine stream can fall on the collection surface (the foaming material layer 331 in the embodiments of the present application) to form a fiber felt (i.e. the felt-like spun layer 332) similar to non-woven fabric. For the detailed description of the electrostatic stretching spinning method, please refer to the prior art. According to the different polymer solution or melt, the felt-like spun layer 332 can include one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning and poly-p-phenylene terephthalamide spinning.

[0066] The materials of the foaming material layer 331 and the felt-like spun layer 332 are both high-elastic flexible materials, so they can disperse the stress of the whole system (i.e. the thin film transistor). That is, when the display device is a liquid crystal display device, the foaming material layer 331 and the felt-like spun layer 332 can increase the voltage resistance of the array substrate, and when the display device is a flexible organic light-emitting diode display device (Organic Light-Emitting Diode, OLED), the damage of the stress to the array substrate when the OLED display device is deformed can be reduced, so that the service life of the array substrate can be improved, and the applicability of the present application can be increased. The preparation temperature of the foaming material layer 331 and the felt-like spun layer 332 can be selected according to actual needs, and the embodiments of the present application do not make special limitations here.

[0067] In a possible implementation, referring to Figure 5 A first inorganic layer 34 can be formed between the thin film transistor layer 31 and the organic insulating layer 32. The first inorganic layer 34 can be formed by a chemical vapor deposition process, and the thickness can be 1000-2000 angstroms. By forming the first inorganic layer 34, the adhesion between the thin film transistor layer 31 and the film layers above it can be improved, thereby improving the durability and stability of the thin film transistor.

[0068] A second inorganic layer 35 can also be formed above the gas absorption layer 33, and the thickness can be the same as that of the first inorganic layer 34. The second inorganic layer 35 can also be formed by a chemical vapor deposition process. By forming the second inorganic layer 35 above the gas absorption layer 33, on the one hand, the material of the second inorganic layer 35 can fill part of the voids on the upper surface of the gas absorption layer 33 during the formation of the second inorganic layer 35 by chemical vapor deposition, thereby improving the film adhesion between the gas absorption layer 33 and the second inorganic layer 35. On the other hand, this can also play a role in packaging and pressing the gas absorption layer 33, facilitating the subsequent deposition and preparation of the metal layer or other film layers on the second inorganic layer 35.

[0069] It can be understood that in some embodiments, the first inorganic layer 34, the organic insulating layer 32, the gas absorption layer 33, and the second inorganic layer 35 can be prepared by a non-layer-by-layer deposition method, that is, at least two of the preparation materials of the first inorganic layer 34, the organic insulating layer 32, the gas absorption layer 33, and the second inorganic layer 35 are mixed, so that a composite film layer can be formed during preparation, thereby improving the preparation efficiency. For example, the preparation materials of the foamed material layer 331, the felt-like spun layer 332, and the second inorganic layer 35 can be mixed, and the preparation process can be performed by inkjet printing, printing, or liquid phase mixing, so as to simplify the film layer structure and reduce the thickness of the display panel.

[0070] Figure 6 The process of absorbing gas by the gas absorption layer provided in the embodiments of the present application is shown in the following schematic diagram: Figure 6 The gas in the organic insulating layer 32 can escape to the side of the foamed material layer 331, and the polyurethane soft foam gel can be foamed and deformed under the action of the catalyst, and the gas can be absorbed by the foamed material layer 331.

[0071] Specifically, the polyurethane soft foam gel can be deformed by foaming under the action of a catalyst, so that the gas molecules escaping from the organic insulating layer 32 can penetrate into the polymer matrix after entering the foaming material layer 331 and move throughout the polymer matrix by molecular diffusion. When the gas diffuses into the unsaturated area of the polymer matrix, it will gather together to form original tiny bubbles, that is, the bubbles nucleate in the polymer matrix. After the bubble nucleation, the gas molecules dissolved in the polymer matrix begin to gradually diffuse to the bubble nucleus, causing the bubble to continuously expand and grow. Because the felt-like spinning layer 332 has a large number of gaps and the spinning also has good elasticity, the convex bubble nucleus of the foaming material layer 331 can grow in the gap, see Figure 6 (a).

[0072] During the growth of the bubble, the free energy in the system continues to decrease, and the driving force for the growth of the bubble decreases, and the bubble gradually stabilizes and solidifies in the felt-like spinning layer 332, see Figure 6 (b), and the entire process can continue to the user's use stage. During the entire process, the film layer thickness of the foaming material layer 331 and the felt-like spinning layer 332 does not change, and the stress between the film layers does not increase, so that the film layer structure is relatively stable. In addition, because the bubble is solidified and shaped in the felt-like spinning layer 332, the bonding force between the foaming material layer 331 and the felt-like spinning layer 332 can be further improved, thereby further improving the stability of the film layer structure.

[0073] By forming the gas absorption layer 33 on the organic insulating layer 32, the escaped gas can be absorbed while maintaining the stability of the film layer structure, so that it is not necessary to open a hole slot in the film layer above the organic insulating layer 32 for exhaust, thereby reducing the damage to the array substrate film layer, and further improving the stability of the array substrate.

[0074] The array substrate provided in the present application comprises: a substrate, a thin film transistor layer formed on the substrate, an organic insulating layer covering the thin film transistor layer, and a gas absorption layer formed above the organic insulating layer, the gas absorption layer can continuously absorb the gas released from the organic insulating layer, reduce the influence of the gas on each film layer in the array substrate, and reduce the stress between the film layers, thereby improving the structural stability of the array substrate and the product yield.

[0075] Based on the same inventive concept, the present application also provides a preparation method of an array substrate, Figure 7 The flowchart of the preparation method of the array substrate provided in the present application is shown in Figure 7 The method can comprise the following steps:

[0076] S110, forming a thin film transistor layer on a substrate.

[0077] The thin film transistor layer can include a plurality of thin film transistors. According to the position of the gate and the active layer, it can be mainly divided into a bottom-gate thin film transistor structure and a top-gate thin film transistor structure.

[0078] Figure 8 A structure diagram of a bottom-gate thin film transistor provided by an embodiment of the present application is shown in FIG. 3. As shown in FIG. 3, the thin film transistor layer 31 can include, for example, a gate layer 311 formed on the substrate 30, a gate insulating layer 312 covering the gate layer 311, an active layer 313 formed on the gate insulating layer 312, and a source-drain layer 314 disposed on the active layer 313. Figure 8 The gate layer 311 and the source-drain layer 314 can be formed by a physical vapor deposition process. The width of the gate in the gate layer 311 can be greater than the width of the active layer 313, so as to prevent the active layer 313 from being affected by the backlight to generate photo-generated carriers, thereby reducing the leakage current of the device and reducing the influence of the backlight on the semiconductor electrical property. The gate insulating layer 312 and the active layer 313 can be formed by a chemical vapor deposition process.

[0079] Figure 9 A structure diagram of a top-gate thin film transistor provided by an embodiment of the present application is shown in FIG. 4. As shown in FIG. 4, the thin film transistor layer 31 can include, for example, an active layer 313 and a source-drain layer 314 above the substrate 30, a gate insulating layer 312 above the active layer, and a gate layer 311 above the gate insulating layer. Figure 9 For the top-gate thin film transistor, in some embodiments, the thin film transistor layer 31 can further include a light shielding layer 315 formed on the substrate 30, a buffer layer 316 covering the light shielding layer 315, and the active layer 313 and the source-drain layer 314 formed on the buffer layer 316.

[0080] The light shielding layer 315 can block the backlight to reduce the influence of the backlight on the semiconductor electrical property. The buffer layer 316 can reduce the film stress and improve the stability of the array substrate under stress. The source-drain layer 314 and the active layer 313 can be disposed in the same layer, which can simplify the manufacturing process and improve the device performance for the top-gate thin film transistor.

[0081] In step S120, an organic insulating layer is formed on the thin film transistor layer.

[0082] After the thin film transistor layer is formed, the organic insulating layer 32 can be deposited above the thin film transistor layer by a chemical vapor deposition process. The material of the organic insulating layer 32 can include, for example, a soluble polyfluoroalkoxy (PFA), a polyimide, and a benzocyclobutene.

[0083] In some embodiments, before forming the organic insulating layer 32, a first inorganic layer 34 can also be formed on the thin film transistor layer, referring to Figure 8 to improve the stability of the thin film transistor.

[0084] Step S130, forming a gas absorption layer on the organic insulating layer.

[0085] Taking PFA as an example, the material of the organic insulating layer 32, the PFA film layer will release a variety of organic gas products during the OVEN process stage and the subsequent use stage, which is easy to make the film layer bulge or even fall off. By forming a gas absorption layer 33 on the PFA film layer, the escaped gas can be absorbed, thereby improving the structural stability between the film layers.

[0086] Referring to Figure 10 , step S130 can also include the following sub-steps:

[0087] Step S131, forming a foamed material layer on the organic insulating layer.

[0088] The foamed material layer 331 can be formed by inkjet printing or printing process, which can absorb the escaped gas of the organic insulating layer 32 to form bubbles.

[0089] Step S132, forming a felt-like spinning layer on the foamed material layer.

[0090] The felt-like spinning layer 332 can be formed on the foamed material layer 331 by electrostatic stretching spinning method. The felt-like spinning layer 332 has a large number of voids, and the bubbles of the foamed material layer 331 can grow in the voids without affecting the structural stability of the felt-like spinning layer 332.

[0091] In some embodiments, referring to Figure 8 and Figure 9 , after forming the felt-like spinning layer 332, a second inorganic layer 35 can also be formed on the felt-like spinning layer 332 to improve the stability of the thin film transistor. Of course, in the array substrate, other film layers such as pixel electrode layer 36 can also be formed above the second inorganic layer 35, and the present application embodiments do not make special restrictions on this.

[0092] Based on the same inventive concept, the present application also provides a display panel, Figure 11 a structural schematic diagram of the display panel provided by the present application embodiment. As Figure 11 shown, the display panel can include the array substrate 100, the counter substrate 200 and the display medium layer 300 sandwiched between the array substrate 100 and the counter substrate 200 described in the above embodiments.

[0093] The array substrate 100 provided in this application embodiment can be applied not only to liquid crystal display panels, but also to other types of display panels, such as organic light-emitting diode display panels.

[0094] For example, in Figure 8 When the array substrate shown is applied to a liquid crystal display panel, the display medium layer 300 can be a liquid crystal layer. The liquid crystal molecules in the liquid crystal layer can be deflected under the drive of the array substrate 100, thereby controlling the amount of light passing through the liquid crystal layer, and after being filtered by the opposing substrate 200, the image is displayed on the liquid crystal display panel.

[0095] exist Figure 9 When the array substrate shown is applied to an organic light-emitting diode (OLED) display panel, the display medium layer 300 can be a pixel defining layer, wherein an organic light-emitting layer is disposed in the pixel defining layer. The organic light-emitting layer can emit light under the drive of the array substrate 100, and after passing through the filtering effect of the opposing substrate 200, the image is displayed on the OLED display panel.

[0096] The structure of the array substrate 100 and the function of each film layer can be referred to the above embodiments. The arrangement of the opposing substrate 200 and the display medium layer 300 can be referred to the prior art, and will not be described again in this application.

[0097] It is understood that those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention is also intended to include these modifications and variations.

[0098] Since the display panel in this embodiment includes the array substrate in the above embodiments, the display panel in this embodiment has all the technical features and effects of the above array substrate embodiments. For details, please refer to the above embodiments, and will not be repeated here.

[0099] It should be understood that in the description of this application and the appended claims, the terms "comprising," "including," "having," and any variations thereof are intended to cover non-exclusive inclusion and mean "including but not limited to," unless otherwise specifically emphasized.

[0100] In the description of this application, unless otherwise stated, " / " indicates that the objects before and after are in an "or" relationship. For example, A / B can mean A or B. "And / or" in this application is used to describe the relationship between the related objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0101] Also in the description of the application, "a plurality" means two or more than two, unless otherwise specified. "At least one of the following" or similar expressions means any combination of the items, including any combination of single or multiple items.

[0102] In addition, in the description of the application, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "vertical", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application.

[0103] In this application, unless otherwise specified and limited, the terms "connection", "connection" and the like should be understood broadly, for example, it can be mechanical connection, or electrical connection; it can be direct connection, or indirect connection through intermediate medium, it can be the internal communication of two elements or the interaction relationship of two elements, unless otherwise specified, for those skilled in the art, the specific meaning of the above terms in this application can be understood according to the specific circumstances.

[0104] In addition, in the description of the specification and the appended claims of the application, the terms "first", "second" and the like are used to distinguish similar objects, and do not necessarily describe a specific order or sequence, nor can they be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein; the features limited by "first", "second" can explicitly or implicitly include at least one of the features.

[0105] In the embodiments of the application, the words "exemplarily" or "for example" and the like are used to represent as an example, illustration or description. Any embodiment or design scheme described as "exemplarily" or "for example" in the embodiments of the application should not be interpreted as more preferred or more advantageous than other embodiments or design schemes. Rather, the use of "exemplarily" or "for example" and the like is intended to present the relevant concept in a specific manner.

[0106] Reference throughout this application to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" or "in a various embodiment" or "in at least one embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment, but can refer to one or more, but not all, of the embodiments, unless otherwise indicated.

[0107] Finally, it should be noted that the above-described embodiments are merely intended for describing and illustrating, not limiting, the technical solutions of the present application; even though the present application has been described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the above embodiments, or equivalently replace some or all of the technical features thereof; and such modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An array substrate, characterized in that, include: The system comprises a substrate, a thin-film transistor layer formed on the substrate, an organic insulating layer covering the thin-film transistor layer, and a gas-absorbing layer formed above the organic insulating layer, wherein the gas-absorbing layer is capable of absorbing gases released by the organic insulating layer; wherein the gas-absorbing layer includes a foamed material layer and a felt-like spun layer stacked together, the foamed material layer being in contact with the organic insulating layer, the foamed material layer being formed on the organic insulating layer by inkjet printing or printing process, and the felt-like spun layer being formed on the foamed material layer by electrostatic stretching spinning.

2. The array substrate according to claim 1, characterized in that, The foaming material layer includes multiple components such as plastics, rubber, catalysts, foam stabilizers, and foaming agents.

3. The array substrate according to claim 1, characterized in that, The felt-like spinning layer includes one or more of polyester spinning, polyamide spinning, polyvinyl alcohol spinning, polyacrylonitrile spinning, polyurethane spinning, and poly(p-phenylene terephthalamide) spinning.

4. The array substrate according to any one of claims 1-3, characterized in that, A first inorganic layer is formed between the thin-film transistor layer and the organic insulating layer, and a second inorganic layer is also covered above the gas absorption layer.

5. A method for fabricating an array substrate, characterized in that, The method for preparing the array substrate as described in any one of claims 1-4 includes: A thin-film transistor layer is formed on a substrate. An organic insulating layer is formed on the thin-film transistor layer; A gas absorption layer is formed on the organic insulating layer, the gas absorption layer being used to absorb the gas released by the organic insulating layer; The formation of the gas absorption layer on the organic insulating layer includes: The foaming material is prepared on the organic insulating layer using inkjet printing or printing technology to form a foaming material layer. A felt-like spun layer is formed on the foam material layer by electrostatic stretching spinning.

6. A display panel, characterized in that, include: The array substrate, the opposing substrate, and the display medium layer sandwiched between the array substrate and the opposing substrate as described in any one of claims 1-4.

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