Semiconductor device

Abstract

The invention relates to the technical field of semiconductors, and discloses a semiconductor device. The semiconductor device comprises a containing groove used for containing cleaning liquid; the vacuum adsorption mechanism is used for adsorbing an interconnection device to be separated, and the interconnection device is formed by interconnection of two device parts; when the separation operation is performed on the interconnection device, the vacuum adsorption mechanism adsorbs one of the two device parts and then is erected at the opening of the accommodating groove, so that the interconnection area of the two device parts is placed in the cleaning liquid in the accommodating groove; and the ultrasonic generation module is used for applying ultrasonic waves to the cleaning liquid when the separation operation is executed on the interconnection device. The recycling rate of interconnected devices is improved; and the process cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Art

[0002] Infrared imaging technology has the advantages of strong environmental adaptability, good concealment, strong anti-interference ability, and the ability to identify camouflaged targets within a certain distance. It has been widely used in various high-precision weapons and equipment, greatly improving the combat effectiveness of the army. The infrared focal plane detector is the core component of infrared imaging technology. Relevant research institutions at home and abroad have been committed to developing small-sized, large-scale infrared focal plane detectors with small size, light weight, low power consumption and over-the-horizon detection capabilities. The core of the infrared focal plane detector is the infrared focal plane detector hybrid chip, which is mainly divided into two parts: the detection chip and the readout circuit. The detector chip and the readout circuit are combined by flip-chip interconnection to realize the conversion of photoelectric signals and electrical signals.

[0003] With the miniaturization of the size of hybrid infrared focal plane detector chips and the high density of pixel pitch in the detection chip, the difficulty of interconnecting the detection chip and the readout circuit is gradually increasing. The warping of the detection chip itself and the surface state of the two will affect the success rate of the interconnection, and will cause failures such as the detection chip and the readout circuit not being connected or being over-welded after the interconnection process; for hybrid infrared focal plane detector chips with interconnection failures, the detection chip and the readout circuit can be artificially separated, the detection chip can be recycled again, and successful interconnection can be achieved by repeated welding. However, during the separation process of the detection chip and the readout circuit, the interconnection interface of the detection chip is easily damaged, which affects the recycling of the detection chip and is likely to increase the process cost. Summary of the invention

[0004] The present invention aims to at least provide a semiconductor device that can at least solve the problem of low recycling rate of interconnection devices and high process cost, and at least achieve the effect of improving the recycling rate of interconnection devices and reducing process cost.

[0005] In order to solve the above technical problems, the present invention provides a semiconductor device, comprising: a receiving tank, the receiving tank is used to receive a cleaning liquid; a vacuum adsorption mechanism, the vacuum adsorption mechanism is used to adsorb an interconnected device to be separated, the interconnected device is formed by two device parts interconnected with each other; when performing a separation operation on the interconnected device, the vacuum adsorption mechanism adsorbs one of the two device parts and then sets it at the opening of the receiving tank, so that the interconnected area of ​​the two device parts is placed in the cleaning liquid in the receiving tank; an ultrasonic generating module is used to apply ultrasonic waves to the cleaning liquid when performing a separation operation on the interconnected device. When the interconnected device to be separated is separated by the semiconductor device, firstly, the vacuum adsorption mechanism is used to adsorb one of the two device parts and then sets it at the opening of the receiving tank, the interconnected area of ​​the two device parts is placed in the cleaning liquid in the receiving tank, and then ultrasonic waves are applied to the cleaning liquid. The acoustic energy of ultrasound is converted into the mechanical kinetic energy of the cleaning liquid and the containing tank, so that the interconnection area of ​​the two device parts is broken under mechanical vibration, and the two device parts are separated. The device part of the two device parts that is not adsorbed by the vacuum adsorption mechanism will fall into the cleaning liquid, and the device part adsorbed by the vacuum adsorption mechanism will not move. This can avoid the two device parts from contacting and generating friction after separation, avoid damage to the effective interconnection surface of the device parts, and ensure that the device parts can be recycled, thereby improving the recycling rate of interconnected devices and reducing process costs.

[0006] In addition, the vacuum adsorption mechanism includes: an adsorption panel, on which a through hole is provided, and the end surface of one end of the through hole is used to contact the interconnection device to be separated; an air guide tube, one end of which is sealed and connected to the other end of the through hole, and the other end of the air guide tube is used to communicate with a vacuum pump to form a negative pressure environment inside the through hole through the vacuum pump. The vacuum adsorption mechanism can bear the weight of the entire interconnection device to be separated.

[0007] In addition, when performing the separation operation on the interconnection device, the absolute value of the adsorption pressure of the vacuum adsorption mechanism on the interconnection device to be separated is 0.05MPa-0.1MPa, which can simultaneously meet the requirements of high reliability of the device part and avoid contact and friction between the two device parts after separation.

[0008] In addition, the weight of the device part not adsorbed by the vacuum adsorption mechanism is greater than the weight of the device part adsorbed by the vacuum adsorption mechanism. After the two device parts are separated, the device part not adsorbed by the vacuum adsorption mechanism is more likely to fall and sink due to its own gravity, thereby preventing the two device parts from contacting and generating friction after separation.

[0009] In addition, the density of the device part not adsorbed by the vacuum adsorption mechanism is greater than the density of the cleaning liquid. After the two device parts are separated, the device part not adsorbed by the vacuum adsorption mechanism will not float on the surface of the cleaning liquid, thereby preventing the two device parts from contacting and generating friction after separation.

[0010] In addition, the ultrasonic generating module includes: an ultrasonic generator located in the cleaning liquid; a power source located outside the containing tank and electrically connected to the ultrasonic generator to enable the ultrasonic generator to generate ultrasonic waves.

[0011] In addition, the working power of the ultrasonic generator is 40W to 80W, which can meet the requirements of high reliability of the device part and high recycling rate of the device part.

[0012] In addition, the frequency of the ultrasonic wave is 30KHZ to 40KHZ, which can meet the requirements of high reliability of the device part and high recycling rate of the device part at the same time.

[0013] In addition, it also includes: an infrared sensor, the distance from the sensing position of the infrared sensor to the opening of the receiving groove is greater than the distance from the bottom of the interconnection device to the opening of the receiving groove at the start time of the separation operation on the interconnection device. At the start time of the separation operation, the infrared sensor works normally; during the separation operation, the two device parts of the interconnection device are separated, and the device part that is not adsorbed by the vacuum adsorption mechanism falls, and the fallen device part blocks the signal transmission of the infrared sensor at a certain moment, causing the infrared sensor to suspend operation; in this way, the separation of the two device parts is monitored.

[0014] In addition, two device parts of the interconnected device include a detection chip and a readout circuit, and the material that interconnects the two device parts includes indium. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0016] Figure 1 A schematic structural diagram of a semiconductor device provided by an embodiment of the present invention;

[0017] Figure 2 A top view of an adsorption panel provided in accordance with an embodiment of the present invention. DETAILED DESCRIPTION

[0018] In the related art, the hybrid infrared focal plane detector chip is prepared on the surface of the readout circuit and corresponds to the electrode of the detection chip, and the electrode of the detection chip is aligned face to face with the indium column on the surface of the readout circuit, and then the indium column is pressed and welded after leveling, and then reflowed after pressing and welding to solidify the indium column, so as to realize the interconnection between the detection chip and the readout circuit. The failure of the interconnection between the detection chip and the readout circuit often causes different degrees of dead blind pixels and overheated blind pixels, that is, the pixels in the detection chip cannot be imaged, which will affect the signal reading and processing capabilities of the detection chip. Since the preparation process of the detection chip includes many complex process links such as material growth and epitaxy, passivation and annealing, injection and lithography, the finished product cycle is long; compared with the readout circuit, the manufacturing process of the detection chip is more complicated and the process cost is higher. Therefore, for the hybrid infrared focal plane detector chip with interconnection failure, the detection chip and the readout circuit can be artificially separated, the detection chip can be recycled again, and the successful interconnection can be achieved by repeated pressing.

[0019] Ultrasonic separation is usually used to separate the detection chip and the readout circuit. The ultrasonic separation method mainly involves placing the infrared focal plane detector hybrid chip into the cleaning tank of an ultrasonic cleaning machine for ultrasonic vibration separation. Ultrasonic waves propagate in the liquid in the ultrasonic tank, converting the sound energy into mechanical kinetic energy of the liquid and the cleaning tank; by adjusting the frequency of the ultrasonic wave, the indium column is vibrated and broken, at which point the detection chip and the readout circuit change from an interconnected state to a separated state. However, when the indium column is vibrated and broken, the indium column presents an irregular cross-sectional shape with varying heights. Since the size of the readout circuit is larger than that of the detection chip, the detection chip and the readout circuit are both located in the cleaning tank, and there is still partial contact, which causes the broken indium column to rub against the interconnection surface of the detection chip and cause scratches; other protrusions on the surface of the readout circuit and sharp corners on all four sides may damage the detection chip. Damage to the effective interconnection surface of the detection chip will affect the recycling of the detection chip, reduce the performance of the detection chip, and increase the process cost.

[0020] Therefore, there is an urgent need to provide a solution to improve the recycling rate of detection chips and reduce process costs.

[0021] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it can be understood by those skilled in the art that in the embodiments of the present invention, many technical details are provided to enable readers to better understand the present invention. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present invention can be implemented.

[0022] refer to Figure 1An embodiment of the present invention provides a semiconductor device, comprising: a containing tank 100, the containing tank 100 is used to contain a cleaning liquid (not shown); a vacuum adsorption mechanism 200, the vacuum adsorption mechanism 200 is used to adsorb an interconnection device 300 to be separated, the interconnection device 300 is formed by two device parts interconnected with each other; when performing a separation operation on the interconnection device 300, the vacuum adsorption mechanism 200 adsorbs one device part 310 of the two device parts and is then set up at the opening of the containing tank 100, so that the interconnection area of ​​the two device parts is placed in the cleaning liquid in the containing tank 100; an ultrasonic generating module (not shown), used to apply ultrasonic waves to the cleaning liquid when performing a separation operation on the interconnection device 300.

[0023] In this embodiment, when the interconnected device 300 to be separated is separated by the semiconductor device, the vacuum adsorption mechanism 200 is first used to adsorb one of the two device parts 310 and then set up at the opening of the receiving tank 100, and the interconnected regions of the two device parts are placed in the cleaning liquid in the receiving tank 100, and then ultrasonic waves are applied to the cleaning liquid. The acoustic energy of the ultrasonic wave is converted into the mechanical kinetic energy of the cleaning liquid and the receiving tank 100, so that the interconnected regions of the two device parts are broken under mechanical vibration, and the two device parts are separated. The device part 320 of the two device parts that is not adsorbed by the vacuum adsorption mechanism will fall into the cleaning liquid, and the device part 310 adsorbed by the vacuum adsorption mechanism 200 will not move, which can avoid the contact and friction between the two device parts after separation, avoid damage to the effective interconnected surface of the device part, and ensure that the device part can be recycled, thereby improving the recycling rate of the interconnected device and reducing the process cost.

[0024] In one embodiment, the two device parts of the interconnected device 300 include a detection chip and a readout circuit, and the material by which the two device parts are interconnected includes indium. In this embodiment, the interconnected device 300 is an infrared detector hybrid chip. In other embodiments, the two device parts of the interconnected device include other device parts that need to be interconnected, and the interconnected device can also be other devices. The material by which the two device parts are interconnected includes other materials.

[0025] It can be known that the interconnection device 300 to be separated is an interconnection device in which the detection chip and the readout circuit fail to be interconnected; the thickness, length and width of the readout circuit are usually much larger than the detection chip. The front of the detection chip is interconnected with the front of the readout circuit, and the vacuum adsorption mechanism 200 adsorbs the back of the detection chip or the back of the readout circuit. In this embodiment, it is preferred that the vacuum adsorption mechanism 20 adsorbs the back of the detection chip. After the separation operation is performed on the interconnection device 300, the detection chip and the readout circuit are separated, and the readout circuit falls into the receiving groove due to being adsorbed by the vacuum adsorption mechanism 200; in addition, the manufacturing process of the detection chip is more complicated than that of the readout circuit, and the process cost is high. Therefore, the vacuum adsorption mechanism 200 adsorbs the back of the detection chip to directly transfer the detection chip for a secondary interconnection process, thereby improving the success rate of remedying the failure of the detection chip to interconnect, recycling the detection chip that fails to interconnect, and saving process costs.

[0026] In one embodiment, the weight of the device part 320 of the two device parts that is not adsorbed by the vacuum adsorption mechanism 200 is greater than the weight of the device part 310 adsorbed by the vacuum adsorption mechanism 200. After the two device parts are separated, the device part 320 that is not adsorbed by the vacuum adsorption mechanism is more likely to fall and sink due to its own gravity, thereby preventing the two device parts from contacting and generating friction after separation.

[0027] In one embodiment, the density of the device part 320 of the two device parts that is not adsorbed by the vacuum adsorption mechanism 200 is greater than the density of the cleaning liquid. After the two device parts are separated, the device part 320 that is not adsorbed by the vacuum adsorption mechanism 200 will not float on the surface of the cleaning liquid, thereby preventing the two device parts from contacting and generating friction after separation.

[0028] In one embodiment, the cleaning solution includes but is not limited to deionized water.

[0029] In one embodiment, in conjunction with reference Figure 1 and Figure 2 The vacuum adsorption mechanism 200 includes: an adsorption panel 210, on which a through hole 230 is provided, and the end surface of one end of the through hole 230 is used to contact the interconnection device 300 to be separated; an air guide tube 220, one end of the air guide tube 220 is sealed and connected to the other end of the through hole 230, and the other end of the air guide tube 220 is used to communicate with a vacuum pump (not shown) to form a negative pressure environment inside the through hole through the vacuum pump. The vacuum adsorption mechanism 200 can bear the weight of the entire interconnection device 300 to be separated. Specifically, the end surface of one end of the through hole is used to contact the back of the detection chip.

[0030] It should be noted that at the start of the separation operation on the interconnection device 300, the vacuum adsorption mechanism 200 has adsorption force on both device parts; after the separation operation on the interconnection device 300, the vacuum adsorption mechanism 200 has adsorption force only on the device part 310 in contact with the adsorption panel 210. The adsorption pressure used by the vacuum adsorption mechanism 200 to adsorb the interconnection device 300 can be set according to actual needs.

[0031] In one embodiment, when performing a separation operation on the interconnection device 300, the absolute value of the adsorption pressure of the vacuum adsorption mechanism 200 on the interconnection device 300 to be separated is 0.05MPa to 0.1MPa, for example, 0.05MPa, 0.07MPa, 0.08MPa or 0.1MPa. If the absolute value of the adsorption pressure of the vacuum adsorption mechanism 200 on the interconnection device 300 to be separated is less than 0.05MPa, the device part is easy to fall off when performing the separation operation, and the effect of avoiding the contact and friction between the two device parts after separation is weakened; if the absolute value of the adsorption pressure of the vacuum adsorption mechanism 200 on the interconnection device 300 to be separated is greater than 0.1MPa, the adsorption force on the device part is too large, which is easy to cause damage to the device. Therefore, the absolute value of the adsorption pressure of the vacuum adsorption mechanism 200 on the interconnection device 300 to be separated is 0.05MPa to 0.1MPa, which can simultaneously take into account the high reliability of the device part and the need to avoid the contact and friction between the two device parts after separation. It should be noted that the absolute value of the adsorption pressure of the vacuum adsorption mechanism 200 on the interconnect device 300 to be separated is not limited thereto.

[0032] In one embodiment, the thickness of the adsorption panel 210 is 5 cm. In other embodiments, the thickness of the adsorption panel is not limited thereto, and the thickness of the adsorption panel is set according to actual needs.

[0033] In one embodiment, the cross-sectional shape of the airway tube 220 is circular; the diameter of the airway tube 220 is 1 cm. In other embodiments, the cross-sectional shape of the airway tube is other shapes, such as square; the size of the airway tube is set according to actual needs and is not limited here.

[0034] Figure 2 In the figure, the number of through holes 230 is multiple, and the multiple through holes 230 are arranged in an array as an illustration. The through holes 230 on the adsorption panel 210 are evenly distributed, and the adsorption force of the vacuum adsorption mechanism 200 on the device part is more uniform, thereby improving the stability of the device part when being adsorbed. In other embodiments, the multiple through holes are distributed in other forms, such as irregular distribution or annular distribution.

[0035] In other embodiments, the number of the through hole may also be one.

[0036] In one embodiment, the cross-sectional shape of the through hole 230 is circular; the diameter of the through hole 230 is 2 mm. In other embodiments, the cross-sectional shape of the through hole is other shapes, such as square; the size of the through hole is set according to actual needs and is not limited here.

[0037] In one embodiment, the ultrasonic generating module includes: an ultrasonic generator located in the cleaning liquid; and a power source located outside the containing tank and electrically connected to the ultrasonic generator to enable the ultrasonic generator to generate ultrasonic waves.

[0038] In one embodiment, the working power of the ultrasonic generator is 40W to 80W, for example, 40W, 50W, 60W, 70W or 80W. If the working power of the ultrasonic generator is less than 40W, the two device parts cannot be completely separated, and the effect of improving the recycling rate of the interconnected device is weakened; if the working power of the ultrasonic generator is greater than 80W, the energy consumption increases and it is easy to cause damage to the device part. Therefore, the working power of the ultrasonic generator is 40W to 80W, which can take into account the requirements of high reliability of the device part and high recycling rate of the device part. It should be noted that the working power of the ultrasonic generator is not limited to this.

[0039] In one embodiment, the frequency of the ultrasonic wave is 30KHZ to 40KHZ, for example, 30KHZ, 35KHZ or 40KHZ. If the frequency of the ultrasonic wave is less than 30KHZ. If the frequency of the ultrasonic wave is less than 30KHZ, the separation time is long, and even the two device parts cannot be completely separated, and the effect of improving the recycling rate of the interconnected device is weakened; if the frequency of the ultrasonic wave is greater than 0KHZ, it is easy to cause damage to the device part. Therefore, the frequency of the ultrasonic wave is 30KHZ to 40KHZ, which can take into account the requirements of high reliability of the device part and high recycling rate of the device part. It should be noted that the frequency of the ultrasonic wave is not limited to this.

[0040] In one embodiment, the semiconductor device further includes: an infrared sensor, wherein the distance from the sensing position of the infrared sensor to the opening of the receiving groove 100 is greater than the distance from the bottom of the interconnection device 300 to the opening of the receiving groove 100 at the start time of performing the separation operation on the interconnection device 300. At the start time of performing the separation operation, the infrared sensor works normally; during the separation operation, the two device parts of the interconnection device 300 are separated, and the device part 320 not adsorbed by the vacuum adsorption mechanism 200 falls, and the fallen device part 320 blocks the signal transmission of the infrared sensor at a certain moment, causing the infrared sensor to suspend working; in this way, the separation of the two device parts is monitored.

[0041] In other embodiments, the infrared sensor may not be provided, and the separation of the two device parts may be manually observed.

[0042] In one embodiment, the semiconductor device further comprises: an infrared alarm, which is adapted to sound an alarm when the infrared sensor stops working.

[0043] In other embodiments, the infrared alarm may not be provided, and the signal transmission of the infrared sensor may be manually observed.

[0044] In one embodiment, continue to refer to Figure 1 The infrared sensor includes an infrared generator 410 and an infrared receiver 420. The infrared generator 410 and the infrared receiver 420 are respectively located on the side wall surfaces opposite to each other in the receiving groove. The infrared generator 410 is used to emit infrared signals, and the infrared receiver 420 is used to receive infrared signals emitted by the infrared generator. Figure 1 The solid line between the mid-infrared generator 410 and the infrared receiver 420 is an infrared signal.

[0045] The semiconductor device provided in this embodiment combines a receiving groove 100, an infrared alarm, an infrared sensor, an ultrasonic generating module and a vacuum adsorption mechanism 200, wherein the infrared sensor includes an infrared generator 410 and an infrared receiver 420, the ultrasonic generating module includes a power supply and an ultrasonic generator, and the vacuum adsorption mechanism 200 includes an adsorption panel 210, an air duct 220 and a vacuum pump; the infrared sensor and the ultrasonic generator are both located in the receiving groove 100. At the beginning of the separation operation on the interconnection device 300, there is a cleaning liquid in the receiving tank 100, and the infrared sensor and the ultrasonic generator are both located in the cleaning liquid of the receiving tank 100 and start working; the vacuum adsorption mechanism 200 adsorbs the interconnection device 300 to be separated and is then set up at the opening of the receiving tank 100, that is, the vacuum adsorption mechanism 200 generates an adsorption force on both device parts; in the process of performing the separation operation on the interconnection device 300, the two device parts are separated by the effect of ultrasound, and the device part 320 that is not in contact with the adsorption panel 210 of the vacuum adsorption mechanism 200 falls, and the fallen device part 320 blocks the signal transmission of the infrared sensor at a certain moment, and the infrared receiver 420 cannot receive the infrared signal from the infrared generator 410, and the infrared alarm sounds an alarm. At this time, it is observed whether the two device parts are completely separated. When the two device parts are completely separated, the ultrasonic generator stops working; after the separation operation is performed on the interconnection device 300, the two device parts are completely separated, and the vacuum adsorption mechanism 200 adsorbs only the device part 310 that is in contact with the adsorption panel 210. By separating the two device parts through the semiconductor device of the present application, it is possible to avoid friction caused by contact between the two device parts after separation, avoid damage to the effective interconnection surface of the device parts, and ensure that the device parts can be recycled, thereby improving the recycling rate of interconnection devices and reducing process costs.

[0046] It should be understood that the expressions "mechanism", "device", "component" and the like used in this application are only a method for distinguishing different components, elements, parts, portions or assemblies at different levels. However, if other words can achieve the same purpose, the word can be replaced by other expressions.

[0047] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for realizing the present invention, and in practical applications, the technical features of the above-mentioned embodiments can be arbitrarily combined. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification, and various changes can be made in form and details without departing from the spirit and scope of the present invention.

Claims

1. A semiconductor device, characterized in that: include: A holding tank, the holding tank is used to hold a cleaning liquid; A vacuum adsorption mechanism, wherein the vacuum adsorption mechanism is used to adsorb the interconnection device to be separated, wherein the interconnection device is formed by two device parts interconnected with each other; When performing a separation operation on the interconnected device, the vacuum adsorption mechanism adsorbs one of the two device parts and then is mounted at the opening of the receiving tank, so that the interconnected area of ​​the two device parts is placed in the cleaning liquid in the receiving tank; The ultrasonic wave generating module is used to apply ultrasonic waves to the cleaning liquid when performing a separation operation on the interconnect device.

2. The semiconductor device according to claim 1, wherein: The vacuum adsorption mechanism comprises: An adsorption panel, wherein a through hole is provided on the adsorption panel, and an end surface where one end of the through hole is located is used to contact the interconnection device to be separated; An air duct, one end of which is sealed and connected to the other end of the through hole, and the other end of the air duct is used to communicate with a vacuum pump so as to form a negative pressure environment inside the through hole through the vacuum pump.

3. The semiconductor device according to claim 1, wherein: When performing a separation operation on the interconnect device, the absolute value of the adsorption pressure of the vacuum adsorption mechanism on the interconnect device to be separated is 0.05 MPa to 0.1 MPa.

4. The semiconductor device according to claim 1, wherein: The weight of the component part of the two component parts that is not sucked by the vacuum suction mechanism is greater than the weight of the component part sucked by the vacuum suction mechanism.

5. The semiconductor device according to claim 1, wherein: The density of the device portion of the two device portions that is not adsorbed by the vacuum adsorption mechanism is greater than the density of the cleaning liquid.

6. The semiconductor device according to claim 1, wherein: The ultrasonic wave generating module comprises: an ultrasonic wave generator located in the cleaning liquid; and a power source located outside the containing tank and electrically connected to the ultrasonic wave generator for enabling the ultrasonic wave generator to generate ultrasonic waves.

7. The semiconductor device according to claim 6, wherein: The working power of the ultrasonic generator is 40W to 80W.

8. The semiconductor device according to claim 1, wherein: The frequency of the ultrasonic wave is 30KHZ-40KHZ.

9. The semiconductor device according to claim 1, wherein: Also includes: An infrared sensor, wherein the distance from the sensing position of the infrared sensor to the opening of the receiving groove is greater than the distance from the bottom of the interconnection device to the opening of the receiving groove at the start time of performing a separation operation on the interconnection device.

10. The semiconductor device according to claim 1, wherein: The two device parts of the interconnected device include a detection chip and a readout circuit, and the material by which the two device parts are interconnected includes indium.

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