Liquid material gasification device and liquid material gasification method

Abstract

The invention provides a liquid material gasification device and a liquid material gasification method. This liquid material gasification device is provided with: a gas-liquid mixing unit that mixes a liquid material and a carrier gas to generate a gas-liquid mixture; a carrier gas supply channel for supplying a carrier gas to the gas-liquid mixing unit; a flow path part through which the gas-liquid mixture generated by the gas-liquid mixing part flows; a vaporizing unit that heats and vaporizes the liquid material contained in the gas-liquid mixture flowing through the flow path unit; and a cooling part for cooling the runner part. The cooling part communicates with the carrier gas supply channel.

Description

Technical Field

[0001] The invention relates to a liquid material gasification device and a liquid material gasification method. Background Art

[0002] In a DLI (Direct Liquid Injection) liquid material vaporization device (hereinafter also referred to as a "vaporizer"), a gas-liquid mixture of a liquid material and a carrier gas is sprayed into a vaporization chamber through a nozzle to vaporize the liquid material. In order to completely vaporize the liquid material in the vaporization chamber, the vaporization chamber is heated by a heater.

[0003] However, if the vaporization chamber is heated to a high temperature, the heat of the vaporization chamber is easily transferred to the gas-liquid mixture before spraying. As a result, there is a concern that the liquid material contained in the gas-liquid mixture may be thermally decomposed or deteriorated before being vaporized in the vaporization chamber.

[0004] In this regard, for example, Patent Document 1 discloses a vaporizer having a cooling structure for cooling a nozzle. The cooling structure has a refrigerant channel for a refrigerant to flow. Water or a coolant is used as the refrigerant. The nozzle is cooled by allowing the refrigerant to flow through the refrigerant channel. As a result, the volatilization of the liquid material before spraying due to the heat of the vaporization chamber is reduced.

[0005] Patent Document 1: Japanese Patent Publication No. 2005-109348 Summary of the invention Problems to be solved by the invention

[0006] However, in the cooling structure of the vaporizer of Patent Document 1, in addition to the carrier gas mixed with the liquid material, a dedicated refrigerant is required to cool the nozzle to be cooled. Therefore, a device for introducing the refrigerant and a device for discarding the refrigerant after the nozzle is cooled are required. As a result, the semiconductor processing device provided with the vaporizer may be enlarged. In addition, the cost may increase due to the provision of the equipment required for introducing and discarding the refrigerant.

[0007] The present invention is completed to solve the above-mentioned problems, and its purpose is to provide a liquid material vaporization device and a liquid material vaporization method, which can effectively utilize the carrier gas mixed with the liquid material as a gas for cooling the cooling object, thereby suppressing the size and cost increase of the semiconductor processing equipment. Means for solving problems

[0008] According to one aspect of the present invention, a liquid material vaporization device comprises: a gas-liquid mixing section for mixing a liquid material and a carrier gas to generate a gas-liquid mixture; a carrier gas supply channel for supplying the carrier gas to the gas-liquid mixing section; a flow channel section for supplying the gas-liquid mixture generated by the gas-liquid mixing section to flow; a vaporization section for heating the liquid material contained in the gas-liquid mixture flowing in the flow channel section to vaporize it; and a cooling section for cooling the flow channel section, the cooling section being connected to the carrier gas supply channel.

[0009] Another aspect of the present invention is a method for vaporizing a liquid material, including: a gas-liquid mixture generating step, in which a gas-liquid mixture is generated by mixing a liquid material and a carrier gas in a gas-liquid mixing section; a gasification step, in which the liquid material contained in the gas-liquid mixture generated in the gas-liquid mixing section and supplied to the gasification section via a flow section is heated in the gasification section to be vaporized; a cooling step, in which the flow section is cooled by supplying the carrier gas; and a carrier gas supply step, in which the carrier gas after the flow section is cooled in the cooling step is supplied to the gas-liquid mixing section via a carrier gas supply channel. Effects of the Invention

[0010] According to the present invention, the carrier gas mixed with the liquid material can be effectively used as a gas for cooling the cooling object, thereby suppressing the increase in size and cost of the semiconductor processing apparatus provided with the liquid material vaporizing device. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a cross-sectional view schematically showing the general structure of a liquid material vaporization device according to one embodiment of the present invention. Figure 2 The present invention is a flow chart showing the flow of each step of a liquid material vaporization method for vaporizing a liquid material using the liquid material vaporization apparatus. Figure 3 This is a cross-sectional view of the cooling portion of the liquid material vaporizing device cut along a cross section perpendicular to the flow direction of the gas-liquid mixture in the connecting portion. Figure 4 It is a cross-sectional view schematically showing another structure of the liquid material vaporizing device. Figure 5 It is a cross-sectional view schematically showing another structure of the liquid material vaporizing device. Figure 6 It is a cross-sectional view schematically showing another structure of the liquid material vaporizing device. DETAILED DESCRIPTION

[0012] Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.

[0013] [1. Liquid material gasification device] Figure 1 1 is a cross-sectional view schematically showing the general structure of the liquid material vaporizing device 1 of the present embodiment. The liquid material vaporizing device 1 is provided in, for example, a semiconductor manufacturing device (not shown). The liquid material vaporizing device 1 includes a flow control valve 2 , a vaporizing unit 3 , a connecting unit 4 , and a cooling unit 5 .

[0014] (1-1. Flow control valve) The flow control valve 2 is a mechanism for controlling the flow rate of a fluid (gas or liquid) used, and is, for example, a part of a mass flow controller (flow control device). The flow control valve 2 is, for example, a normally open type, and has a main body block 21 , a support block 22 , and an actuator 23 .

[0015] The main body block 21 is formed of a metal material such as stainless steel. The main body block 21 has a valve seat surface 21S. A contact surface 24S of a valve body 24 described later engages with (contacts or separates from) the valve seat surface 21S.

[0016] A liquid material supply channel 21a, a carrier gas supply channel 21b, and a gas-liquid mixture exhaust channel 21c are formed in the main body block 21. The liquid material supply channel 21a is a flow channel for supplying the liquid material LQ to be vaporized by the vaporization section 3 to the gas-liquid mixing section 29 described later. The carrier gas supply channel 21b is a flow channel for supplying the carrier gas CG to the gas-liquid mixing section 29. As the carrier gas CG, for example, an inert gas such as nitrogen or argon can be used. The gas-liquid mixture exhaust channel 21c is a flow channel for exhausting the gas-liquid mixture MG generated in the gas-liquid mixing section 29. The above-mentioned gas-liquid mixture MG is a mixture of the liquid material LQ and the carrier gas CG. The carrier gas supply channel 21b and the gas-liquid mixture exhaust channel 21c are connected via a connecting channel 21d provided on the valve seat surface 21S.

[0017] The support block 22 has a valve body 24. The valve body 24 is a movable body that moves in a separation direction (e.g., up and down direction) relative to the valve seat surface 21S of the main body block 21, and has a contact surface 24S that contacts the valve seat surface 21S. The valve body 24 is supported by a support body 26 via a diaphragm 25 in a direction intersecting the separation direction (e.g., horizontal direction). The support body 26 is fastened to the main body block 21, for example, by bolts.

[0018] The actuator 23 is a driving unit that moves the valve body 24 in the above-mentioned clutch direction. The actuator 23 includes, for example, a piezoelectric stack 231. The piezoelectric stack 231 is formed by stacking a plurality of piezoelectric elements that expand and deform when a voltage is applied. The piezoelectric stack 231 is stored in a storage body 232, and applies a pressing force to the valve body 24 via a ball 27 and a plunger 28. The storage body 232 is fixed to the support body 26.

[0019] In addition, the flow control valve 2 is further provided with a gas-liquid mixing section 29. The gas-liquid mixing section 29 mixes the liquid material LQ and the carrier gas CG to generate the above-mentioned gas-liquid mixture MG. Such mixing of the liquid material LQ and the carrier gas CG is performed in the space between the valve seat surface 21S of the main block 21 and the contact surface 24S of the valve body 24. Here, the above-mentioned space is referred to as a gas-liquid mixing chamber 29a. Therefore, the gas-liquid mixing section 29 includes the above-mentioned gas-liquid mixing chamber 29a.

[0020] The gas-liquid mixing chamber 29a is a space sandwiched by the valve seat surface 21S and the contact surface 24S, and the valve seat surface 21S and the contact surface 24S form the gas-liquid mixing chamber 29a. Therefore, it can be considered that the gas-liquid mixing part 29 includes the valve seat surface 21S and the contact surface 24S forming the gas-liquid mixing chamber 29a.

[0021] In the above structure, when no voltage is applied to the piezoelectric stack 231, the valve opening (the gap between the valve seat surface 21S and the contact surface 24S) is set to a predetermined value. In this state, the valve body 24 and the plunger 28 are forced in a first direction by a force applying member (not shown). The first direction is, for example, a direction in which the contact surface 24S moves away from the valve seat surface 21S (for example, Figure 1 center upward).

[0022] When voltage is applied to the piezoelectric stack 231, the piezoelectric stack 231 expands. As a result, the piezoelectric stack 231 overcomes the force of the force applying member and presses the valve body 24 in a second direction (e.g., downward) opposite to the first direction via the ball 27 and the plunger 28. Finally, the contact surface 24S of the valve body 24 contacts the valve seat surface 21S.

[0023] In a state before the contact surface 24S contacts the valve seat surface 21S, that is, in a state in which a gap is formed between the valve seat surface 21S and the contact surface 24S, the liquid material LQ is supplied to the gas-liquid mixing section 29 (gas-liquid mixing chamber 29a) via the liquid material supply passage 21a, and the carrier gas CG is supplied to the gas-liquid mixing section 29 via the carrier gas supply passage 21b. In the gas-liquid mixing section 29, if the liquid material LQ and the carrier gas CG are mixed to generate a gas-liquid mixture MG, the generated gas-liquid mixture MG is discharged to the connection section 4 via the gas-liquid mixture discharge passage 21c and toward the vaporization section 3.

[0024] On the other hand, if the contact surface 24S is in contact with the valve seat surface 21S, the flow rate of the liquid material LQ is zero. On the other hand, the carrier gas CG flows from the carrier gas supply channel 21b to the gas-liquid mixture discharge channel 21c via the connecting channel 21d provided on the valve seat surface 21S. That is, in a state where the contact surface 24S is in contact with the valve seat surface 21S, only the carrier gas CG flows in the gas-liquid mixture discharge channel 21c and is discharged. In addition, in a state where the contact surface 24S is in contact with the valve seat surface 21S, (similar to the liquid material LQ) it is also possible to have a structure where the flow rate of the carrier gas CG is zero (i.e., a structure where the liquid material LQ and the carrier gas CG do not flow).

[0025] In this way, by using the structure in which the valve body 24 is moved by the actuator 23, a voltage corresponding to the desired valve opening can be applied to the actuator 23 to achieve the above valve opening. As a result, the flow rate of the liquid material LQ supplied to the gas-liquid mixing section 29, mixed with the carrier gas CG, and discharged together with the carrier gas CG can be appropriately adjusted (controlled).

[0026] (1-2. Gasification section) The vaporization unit 3 heats the liquid material LQ contained in the gas-liquid mixture MG discharged from the gas-liquid mixture discharge passage 21c of the flow control valve 2 to vaporize it. Such a vaporization unit 3 has a vaporization chamber 31 and a nozzle N. The vaporization chamber 31 is a chamber for vaporizing the liquid material LQ contained in the gas-liquid mixture MG, and is heated by a heater (not shown). The nozzle N is located on the upstream side of the vaporization chamber 31 and communicates with the vaporization chamber 31, and sprays the gas-liquid mixture MG into the vaporization chamber 31.

[0027] (1-3. Connection part) The connection part 4 connects the gas-liquid mixture discharge passage 21c of the flow control valve 2 and the gasification part 3. Figure 1 In the structure of FIG. 2 , the connection portion 4 is constituted by a connection pipe 41. The connection pipe 41 is an annular pipe that connects the gas-liquid mixture discharge passage 21 c and the nozzle N. The connection portion 4 is formed of a metal material such as stainless steel.

[0028] Here, the gas-liquid mixture discharge passage 21c of the flow control valve 2 and the connection portion 4 constitute the flow passage portion FP in which the gas-liquid mixture MG generated in the gas-liquid mixing portion 29 flows. That is, the flow passage portion FP is constituted by including the gas-liquid mixture discharge passage 21c and the connection portion 4. Therefore, it can also be considered that the vaporization portion 3 heats the liquid material LQ contained in the gas-liquid mixture MG flowing in the flow passage portion FP to vaporize it.

[0029] The cooling unit 5 cools the flow path portion FP. In particular, the cooling unit 5 cools the connection portion 4 included in the flow path portion FP. The cooling unit 5 includes a housing 51 , an inlet 52 , and a outlet 53 .

[0030] The box 51 covers the periphery of the connection portion 4. In the present embodiment, the box 51 is located around the connection pipe 41 and is formed integrally with the connection pipe 41. That is, the box 51 and the connection pipe 41 are composed of a double pipe with the box 51 as an outer pipe and the connection pipe 41 as an inner pipe.

[0031] The introduction port 52 is a port (opening) for introducing the carrier gas CG into the housing 51. As the carrier gas CG introduced into the housing 51, the same gas as the carrier gas CG mixed with the liquid material LQ in the flow control valve 2 is used. The outlet port 53 is a port (opening) for leading (discharging) the carrier gas CG from the housing 51. The introduction port 52 is located on the vaporization section 3 side relative to the outlet port 53.

[0032] In the box 51 of the cooling section 5, by causing the carrier gas CG to flow from the inlet 52 to the outlet 53, the connection section 4 (connection pipe 41) covered by the box 51 can be cooled. For example, even if the vaporization section 3 becomes a high temperature of about 200°C, the connection section 4 can be cooled by introducing the carrier gas CG of the ambient temperature (for example, about room temperature) where the liquid material vaporization device 1 is installed into the cooling section 5. Therefore, even if the vaporization section 3 becomes a high temperature, the heat of the vaporization section 3 is not easily transferred to the upstream side (the gas-liquid mixing section 29 side of the flow control valve 2) through the connection section 4. As a result, before the gas-liquid mixture MG is supplied to the vaporization section 3, the possibility of thermal decomposition and deterioration of the liquid material LQ contained in the gas-liquid mixture MG can be reduced.

[0033] In particular, when a material with a low vapor pressure (e.g., strontium) is used as the liquid material LQ, the temperature of the vaporization section 3 needs to be made higher in order to evaporate the liquid material LQ in the vaporization section 3. Therefore, the structure of the present embodiment in which the connection section 4 is cooled by the cooling section 5 in order to reduce the thermal decomposition of the liquid material LQ is particularly effective when a material with a low vapor pressure is used as the liquid material LQ.

[0034] In this embodiment, if Figure 1 As shown, the cooling unit 5 is connected to the carrier gas supply passage 21b of the flow control valve 2. For example, the cooling unit 5 can be connected to the carrier gas supply passage 21b by fastening the cooling unit 5 and the main body block 21 of the flow control valve 2 via flange bolts (not shown). In particular, by the above-mentioned bolt fastening, the box body 51 of the cooling unit 5 is connected to the carrier gas supply passage 21b via the outlet 53.

[0035] (2. Liquid material gasification method) Figure 2 1 is a flow chart showing the flow of each step of a liquid material vaporization method for vaporizing the liquid material LQ using the liquid material vaporization device 1 having the above-mentioned structure. Figure 1 as well as Figure 2The liquid material vaporization method according to the present embodiment will be described.

[0036] First, the carrier gas CG is introduced into the cooling section 5 (S1). More specifically, the carrier gas CG is introduced into the housing 51 from the inlet port 52 of the cooling section 5. Thus, the cooling of the flow channel portion FP (particularly the connection portion 4) by the cooling section 5 is started (S2; cooling process). The carrier gas CG introduced into the cooling section 5 and cooling the connection portion 4 is supplied to the gas-liquid mixing section 29 via the carrier gas supply channel 21b (S3; carrier gas supply process). On the other hand, the liquid material LQ is supplied to the gas-liquid mixing section 29 via the liquid material supply channel 21a (S4; liquid material supply process).

[0037] In the gas-liquid mixing unit 29 , the liquid material LQ and the carrier gas CG are mixed to generate a gas-liquid mixture MG ( S5 ; gas-liquid mixture generating step).

[0038] The gas-liquid mixture MG generated in the gas-liquid mixing section 29 is discharged to the connection section 4 (connection pipe 41) via the gas-liquid mixture discharge passage 21c (S6; discharge step). Then, the liquid material LQ contained in the gas-liquid mixture MG discharged via the gas-liquid mixture discharge passage 21c and supplied to the vaporization section 3 via the connection section 4 is heated in the vaporization section 3 to be vaporized (S7; vaporization step).

[0039] Next, the supply of the liquid material LQ to the gas-liquid mixing section 29 is stopped (S8). In addition, S8 may be performed as needed. Next, when the process of vaporizing the liquid material LQ in the vaporizing section 3 is continued ("Yes" in S9), the process returns to S4, and the process after S4 is repeated (because S3 is always performed). In addition, in the structure in which the flow rate of the liquid gas CG becomes zero when the contact surface 24S is in contact with the valve seat surface 21S in the flow control valve 2, it is sufficient to transfer from S9 to S3, and the process after S3 is repeated.

[0040] On the other hand, when the above process is not continued (No in S9 ), the introduction of the carrier gas CG to the cooling unit 5 is stopped ( S10 ), the cooling of the connecting portion 4 by the cooling unit 5 is completed ( S11 ), and a series of processes are completed.

[0041] (3. Effect) As described above, in the present embodiment, the cooling section 5 is connected to the carrier gas supply channel 21b of the flow control valve 2. Therefore, the carrier gas CG mixed with the liquid material LQ in the flow control valve 2 can be supplied from the cooling section 5 to the gas-liquid mixing section 29 (refer to S2, S3) via the carrier gas supply channel 21b. That is, the carrier gas CG mixed with the liquid material LQ can also be used as a gas for cooling the flow channel section FP (especially the connecting section 4) in the cooling section 5. Thus, in addition to the carrier gas CG mixed with the liquid material LQ, there is no need to prepare a dedicated refrigerant for cooling the flow channel section FP. Therefore, there is no need for equipment for introducing the above-mentioned refrigerant, and further, there is no need for equipment for discarding the above-mentioned refrigerant after cooling. As a result, the size of the semiconductor processing device provided with the liquid material vaporization device 1 can be suppressed, and the increase in cost caused by the installation of the above-mentioned equipment can be suppressed. In addition, since a refrigerant dedicated to cooling is not used, there is no waste caused by the discarding of the above-mentioned refrigerant.

[0042] Furthermore, by using the carrier gas CG in cooling the flow path portion FP, the carrier gas CG is preheated by utilizing the heat of the vaporization portion 3. Therefore, the carrier gas CG is supplied from the cooling portion 5 to the gas-liquid mixing portion 29 via the carrier gas supply passage 21 b, and the liquid material LQ can be heated to a temperature (within a temperature range where thermal decomposition etc. does not occur) at which it is easy to vaporize before the gas-liquid mixture MG mixed with the liquid material LQ is vaporized in the vaporization portion 3. Thus, it is also expected that the vaporization performance of the liquid material LQ in the vaporization portion 3 can be improved.

[0043] Furthermore, in the present embodiment, the housing 51 covers the periphery of the connection portion 4 of the flow channel portion FP, thereby forming a closed space around the connection portion 4. Since the carrier gas CG flows in this space, the diffusion of the carrier gas CG generated in the open space is reduced. Thus, the loss based on the cooling of the carrier gas CG and the useless consumption of the carrier gas CG can be reduced. Furthermore, since the housing 51 is connected to the carrier gas supply channel 21b, the carrier gas CG that flows in the housing 51 and cools the connection portion 4 can be reliably supplied to the gas-liquid mixing portion 29 via the carrier gas supply channel 21b.

[0044] In addition, if Figure 1 As shown, the carrier gas supply passage 21b is connected to the outlet 53 of the cooling unit 5. In this structure, the carrier gas CG introduced into the interior of the housing 51 from the inlet 52 of the cooling unit 5 can be supplied to the carrier gas supply passage 21b via the outlet 53. That is, the structure in which the housing 51 and the carrier gas supply passage 21b are connected can be reliably realized.

[0045] In particular, Figure 1As shown, in the structure in which the inlet 52 is located on the side of the vaporization section 3 relative to the outlet 53, in the cooling process of S2, the connection section 4 can be cooled by causing the carrier gas CG to flow inside the box 51 from the side close to the vaporization section 3 (the downstream side of the flow direction of the gas-liquid mixture MG flowing in the connection section 4) to the side away from it (the upstream side of the flow direction of the gas-liquid mixture MG).

[0046] Thus, the downstream side, to which the heat of the vaporization section 3 is most easily transferred, can be effectively cooled earlier (prioritized) than the upstream side in the connection section 4. As a result, it is possible to reliably make it difficult for the heat of the vaporization section 3 to be transferred to the upstream side via the connection section 4, and the possibility of thermal decomposition and deterioration of the liquid material LQ before being vaporized in the vaporization section 3 can be reliably reduced.

[0047] In addition, the introduction port 52 may be located on the opposite side of the vaporization section 3 with respect to the outlet port 53. However, in this positional relationship, a flow channel connecting the outlet port 53 and the carrier gas supply passage 21b needs to be formed long.

[0048] (4. About the preferred location of the inlet) Figure 3 It is a cross-sectional view when the cooling unit 5 is cut at a cross section perpendicular to the flow direction of the gas-liquid mixture MG in the connecting portion 4 (connecting pipe 41). As shown in the same figure, the inlet 52 of the cooling unit 5 is preferably located in the above cross section at a position overlapping with the tangent line T relative to the outer peripheral surface 51a of the box body 51. In addition, the outer peripheral surface 51a of the box body 51 is a cylindrical surface that covers the outer peripheral surface 41a of the cylindrical connecting pipe 41 of the connecting portion 4 through a gap.

[0049] In this structure, the carrier gas CG is introduced into the box body 51 through the inlet 52 from the direction of the tangent line T of the outer peripheral surface 51a of the box body 51. As a result, it is easy to make the carrier gas CG flow around the connecting portion 4 in the box body 51. By the rotation of the carrier gas CG, the connecting portion 4 can be cooled in a manner that the carrier gas CG is wrapped in the circumferential direction, so the cooling efficiency of the connecting portion 4 can be improved.

[0050] Based on the above situation, it can be considered that Figure 3 In the structure of the cooling part 5 shown, in the cooling process S2, in the above-mentioned cross-section, the connection part 4 is cooled by allowing the carrier gas CG to flow into the box body 51 from the direction of the tangent T of the outer peripheral surface 51a of the box body 51 covering the surroundings of the connection part 4, thereby achieving the effect of improving the cooling efficiency of the connection part 4.

[0051] [2. Other structures of the liquid material vaporization device] Figure 4 It is a cross-sectional view schematically showing another structure of the liquid material vaporizing device 1 according to the present embodiment. Figure 4The liquid material vaporization device 1 is similar to the liquid material vaporization device 1 except that the box 51 of the cooling unit 5 has a spiral gas flow path 51P. Figure 1 Same structure.

[0052] The gas flow passage 51P is a flow passage formed in a spiral shape around the connection portion 4 (connection pipe 41) in the box body 51. The box body 51 having such a gas flow passage 51P can be realized, for example, by forming the box body 51 from a plurality of divided boxes and bonding the divided boxes together by welding or bolting. The spiral gas flow passage 51P is connected to the above-mentioned inlet 52 and outlet 53, respectively.

[0053] exist Figure 4 In the structure, if the carrier gas CG is introduced into the housing 51 from the inlet 52, the carrier gas CG flows in a spiral shape around the connection part 4 along the spiral gas flow path 51P in the housing 51. Thus, the connection part 4 can be cooled by being circumferentially enclosed by the carrier gas CG, so the cooling efficiency of the connection part 4 can be improved.

[0054] Based on the above situation, it can be considered that Figure 4 In the structure, in the cooling process of S2, in the box 51 covering the connection part 4, the connection part 4 is cooled by allowing the carrier gas CG to flow in the spiral gas flow channel 51P formed around the connection part 4, thereby achieving the effect of improving the cooling efficiency of the connection part 4.

[0055] [3. Another structure of the liquid material vaporization device] Figure 5 It is a cross-sectional view schematically showing another structure of the liquid material vaporizing device 1 according to the present embodiment. Figure 5 The liquid material vaporization device 1 is similar to the liquid material vaporization device 1 except that the cooling unit 5 has a heat sink 54 in the box 51. Figure 1 Same structure.

[0056] The heat sink 54 is a flat plate-shaped heat sink, and a plurality of them are provided in the box 51. Each heat sink 54 is connected to the outer peripheral surface 41a (see FIG. 4 ) of the connection portion 4 (connection pipe 41) by welding, for example. Figure 3 ) connected. In addition, the heat sinks 54 are arranged on the outer peripheral surface 41a at predetermined intervals in the direction in which the connection portion 4 extends in the box body 51. The heat sinks 54 can be made of the same metal material as the connection portion 4, or can be made of a metal material (such as aluminum, copper, or an alloy thereof) having a higher thermal conductivity than the metal constituting the connection portion 4.

[0057] By providing a plurality of heat sinks 54 connected to the outer peripheral surface 41a of the connection portion 4 in the housing 51, it is substantially equivalent to a structure in which the surface area of ​​the outer peripheral surface 41a of the connection portion 4 is increased by the surface area of ​​the plurality of heat sinks 54. Therefore, in the housing 51, the carrier gas CG is brought into contact not only with the outer peripheral surface 41a of the connection portion 4 but also with the heat sinks 54 having a large surface area, so that the connection portion 4 can dissipate heat effectively. That is, the cooling efficiency of the connection portion 4 can be improved.

[0058] The liquid material vaporization device 1 described above has the following structure: the vaporization part 3 has a nozzle N, the connection part 4 has a connection pipe 41, and the cooling part 5 cools the connection part 4 (connection pipe 41). In this structure, the cooling part 5 is connected to the carrier gas supply channel 21b, and the carrier gas CG mixed with the liquid material LQ can be effectively used as a gas for cooling the connection part 4, which can suppress the increase in size and cost of the semiconductor processing device provided with the liquid material vaporization device 1, and can obtain the effect of the above-mentioned present embodiment.

[0059] [4. Another structure of the liquid material gasification device] Figure 6 It is a cross-sectional view schematically showing still another structure of the liquid material vaporizing device 1 according to the present embodiment. Figure 6 The liquid material vaporization device 1 is similar to the liquid material vaporization device 1 except that the nozzle N is provided at the connection part 4 which is the outside of the vaporization part 3 and the cooling part 5 also includes the nozzle N to cool the connection part 4. Figure 1 The same structure. In addition, Figure 3 to Figure 5 The structure of the cooling unit 5 shown can of course also be applied to Figure 6 A liquid material gasification device 1.

[0060] exist Figure 6 In the liquid material vaporization device 1, the connection part 4 has a connection pipe 41 and a nozzle N. The nozzle N is located between the connection pipe 41 and the vaporization part 3, and sprays the gas-liquid mixture MG into the vaporization chamber 31 of the vaporization part 3. That is, the nozzle N is located outside the vaporization part 3, that is, on the upstream side of the vaporization part 3. The box body 51 of the cooling part 5 covers both the connection pipe 41 and the nozzle N.

[0061] Even if Figure 6 The structure of Figure 1 Similarly to the structure, by connecting the cooling portion 5 with the carrier gas supply channel 21b, the carrier gas CG mixed with the liquid material LQ can be effectively used as a gas for cooling the connecting portion 4, which can suppress the increase in size and cost of the semiconductor processing device provided with the liquid material vaporization device 1, and can obtain the effect of the above-mentioned present embodiment.

[0062] [5.Supplement] In the structure in which the nozzle N is provided outside (upstream side) of the vaporization section 3, the connection section 4 may be constituted by only the nozzle N. That is, the connection section 4 may be configured without the connection pipe 41, and the gas-liquid mixture discharge passage 21c of the flow control valve 2 and the vaporization section 3 may be connected via the nozzle N. In this structure, the nozzle N is covered by the box 51, and the carrier gas CG is made to flow in the box 51, thereby cooling the nozzle N. Therefore, by connecting the cooling section 5 having such a box 51 to the carrier gas supply passage 21b, the same effect as that of the present embodiment can be obtained.

[0063] In the present embodiment, the flow control valve 2 provided in the liquid material vaporization device 1 is a normally open type, but the structure of the present embodiment in which the carrier gas supply passage 21b is connected to the cooling unit 5 can also be applied to a normally closed type flow control valve 2. In this case, the gas-liquid mixing unit 29 can be appropriately changed to a structure corresponding to the normally closed type.

[0064] The liquid material vaporizing device 1 of the present embodiment is configured such that the carrier gas supply passage 21b is connected to the cooling section 5 in an internal mixing method in which the liquid material LQ and the carrier gas CG are mixed inside the flow control valve 2 to generate a gas-liquid mixture MG. Even in an external mixing method in which the liquid material LQ and the carrier gas CG are mixed outside the flow control valve 2, for example, when spraying into the vaporizing chamber 31, the carrier gas CG after cooling the nozzle N in the cooling section 5 and the liquid material LQ can be mixed, and in this case, the same effect as that of the present embodiment can be obtained.

[0065] As mentioned above, although embodiment of this invention was described, the scope of this invention is not limited to this, It can expand or change and implement within the range which does not deviate from the summary of this invention. Industrial Applicability

[0066] The present invention can be used, for example, in a vaporizer provided at the front end of a semiconductor manufacturing apparatus. Description of reference numerals:

[0067] 1: liquid material vaporization device; 3: vaporization part; 4: connection part; 5: cooling part; 21a: liquid material supply channel; 21b: carrier gas supply channel; 21c: gas-liquid mixture discharge channel; 29: gas-liquid mixing part; 31: vaporization chamber; 41: connection pipe; 41a: outer peripheral surface; 51: casing; 51P: gas flow channel; 51a: outer peripheral surface; 52: inlet port; 53: outlet port; 54: heat sink; CG: carrier gas; FP: flow channel part; LQ: liquid material; MG: gas-liquid mixture; N: nozzle; T: tangent.

Claims

1. A liquid material gasification device, characterized in that: have: A gas-liquid mixing section, mixing the liquid material and the carrier gas to generate a gas-liquid mixture; a carrier gas supply channel for supplying the carrier gas to the gas-liquid mixing part; a flow channel portion for allowing the gas-liquid mixture generated by the gas-liquid mixing portion to flow; a vaporizing section that heats and vaporizes the liquid material contained in the gas-liquid mixture flowing in the flow channel section; and A cooling unit for cooling the flow channel. The cooling portion is communicated with the carrier gas supply passage.

2. The liquid material gasification device according to claim 1, characterized in that: The flow channel portion comprises: a gas-liquid mixture discharge channel for discharging the gas-liquid mixture generated in the gas-liquid mixing section; and a connecting portion, connecting the gas-liquid mixture discharge channel and the gasification portion, The cooling portion cools the connecting portion.

3. The liquid material gasification device according to claim 2, characterized in that: The cooling unit includes a box body covering the periphery of the connecting unit. The box body is communicated with the carrier gas supply channel.

4. The liquid material gasification device according to claim 3, characterized in that: The cooling unit has: an inlet for introducing the carrier gas into the housing; and A guide port for guiding the carrier gas out of the housing. The carrier gas supply channel is connected to the outlet.

5. The liquid material gasification device according to claim 4, characterized in that: The introduction port is located on the vaporization portion side with respect to the outlet port.

6. The liquid material gasification device according to claim 4 or 5, characterized in that: In a cross section perpendicular to the flow direction of the gas-liquid mixture in the connecting portion, The introduction port is located at a position overlapping with a tangent line to the outer peripheral surface of the housing.

7. The liquid material gasification device according to any one of claims 3 to 6, characterized in that: The housing has a gas flow passage formed in a spiral shape around the connection portion.

8. The liquid material gasification device according to any one of claims 2 to 6, characterized in that: The cooling portion includes a heat sink connected to an outer peripheral surface of the connecting portion.

9. The liquid material gasification device according to any one of claims 2 to 8, characterized in that: The vaporization section has a nozzle for spraying the gas-liquid mixture into a vaporization chamber. The connecting portion includes a connecting pipe connecting the gas-liquid mixture discharge passage and the nozzle.

10. The liquid material gasification device according to any one of claims 2 to 8, characterized in that: The connecting portion has: a connecting pipe connected to the gas-liquid mixture discharge channel; and The nozzle is located between the connecting pipe and the vaporizing part, and sprays the gas-liquid mixture into the vaporizing chamber of the vaporizing part.

11. A method for gasifying a liquid material, characterized in that: include: a gas-liquid mixture generating step of generating a gas-liquid mixture by mixing a liquid material and a carrier gas in a gas-liquid mixing section; a gasification step of heating the liquid material contained in the gas-liquid mixture generated in the gas-liquid mixing section and supplied to the gasification section via the flow channel section in the gasification section to gasify the liquid material; a cooling step of cooling the flow channel portion by supplying the carrier gas; as well as The carrier gas supplying step supplies the carrier gas after the flow path portion is cooled in the cooling step to the gas-liquid mixing portion through a carrier gas supply passage.

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