Circuit breaker using semiconductor

Abstract

The present invention relates to an embodiment of a semiconductor circuit breaker in which different types of current sensors are arranged in a series structure to detect the same current, and in accordance with an inflow state of the current, whether a fault is present is determined on the basis of detection results of the different types of current sensors.

Description

Technical Field

[0001] The present invention relates to a circuit breaker, and more particularly to a semiconductor circuit breaker (SSCB) using a semiconductor switch for power. Background Art

[0002] If a fault occurs in the power system that provides power, an abnormal current such as an overcurrent or a fault current may flow into the load through the power system. Furthermore, the inflowing abnormal current may cause the load to burn out. Therefore, in the event of a power system fault, in order to prevent the abnormal current from flowing into the load, a circuit breaker may be used to cut off the load from the power system to cut off the current from flowing into the load.

[0003] On the other hand, in the case of a conventional mechanical circuit breaker, it takes several tens of milliseconds (msec) to cut off the circuit, and there is a problem that an abnormal current flows into the load during this period. Therefore, a semiconductor circuit breaker (SSCB) is recently used, which can conduct a large current and includes a semiconductor switch composed of a power semiconductor with a high-speed switching frequency, thereby being able to cut off the current at a high speed.

[0004] In the case of such a semiconductor circuit breaker, the time required to detect a current is extremely short compared to a circuit breaker such as an MCCB (Molded Case Circuit Breaker), and therefore there is an advantage in that the circuit can be interrupted at a high speed.

[0005] On the other hand, in the case of an overcurrent, in the case of an abnormal current such as a noise overcurrent or a surge current that increases instantaneously but returns to normal in a short time, the load will not be burned or the possibility of burning is low. Therefore, if the circuit is cut off, the loss caused by the circuit cutting may be greater.

[0006] However, as described above, when a semiconductor circuit breaker is used, since the current detection time is very short, there is a problem that the circuit is cut off even when a current that does not need to be cut off or should not be cut off, such as the noise overcurrent or surge current, occurs. Furthermore, if such unnecessary circuit cut-off occurs repeatedly, the normal drive of the load may not be maintained, which may cause losses. Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present invention aims to improve the limitations of the above-mentioned prior art.

[0009] To this end, the present specification provides an embodiment that can prevent misjudgment of fault current and unnecessary circuit disconnection.

[0010] In addition, it is also intended to provide an embodiment that can accurately and quickly determine the fault current.

[0011] Furthermore, the present invention also aims to provide an embodiment capable of detecting whether a semiconductor switch is abnormal.

[0012] Means used to solve problems

[0013] In order to solve the above problems, the present invention uses a solution to determine whether a fault exists based on the results of current detection using different types of current sensors.

[0014] Specifically, the technical feature of the present invention is that by configuring different types of current sensors in a series structure, different types of current sensors detect the same current, and according to the current inflow state, it is determined whether there is a fault based on the detection results of different types of current sensors.

[0015] An embodiment of a semiconductor circuit breaker in the present specification that uses the technical features as a solution to the problem is a semiconductor circuit breaker (Solid State Circuit Breaker) configured between a power supply unit and a supply target unit, the semiconductor circuit breaker comprising: a semiconductor switch unit including a plurality of semiconductor switches, the plurality of semiconductor switches determining the maximum size of a current supplied from the power supply unit to the supply target unit according to a gate voltage applied to a gate terminal; a plurality of gate drivers applying the gate voltage to each of the plurality of semiconductor switches; one or more first current sensors disposed at one or more of a first portion at a front end of the semiconductor switch unit, a second portion between the plurality of semiconductor switches, and a third portion at a rear end of the semiconductor switch unit, detecting an inflow current flowing into the semiconductor switch unit; one or more second current sensors of a different type from the first current sensor disposed at one or more of the first portion, the second portion, and the third portion, detecting the inflow current; and a control unit determining whether the inflow current is a fault current based on a first detection result of the first current sensor and a second detection result of the second current sensor, and controlling the plurality of gate drivers according to the determination result.

[0016] In one embodiment, one of the first current sensor and the second current sensor may be a sensor using a Hall Effect measurement method.

[0017] In one embodiment, one of the first current sensor and the second current sensor may be a Hall sensor.

[0018] In one embodiment, one of the first current sensor and the second current sensor may be a magnetoresistive sensor.

[0019] In one embodiment, one of the first current sensor and the second current sensor may be a GMR (Giant Magneto Resistive) sensor.

[0020] In one embodiment, the sensor using the magnetoresistance measurement method may be disposed at the second portion, and detects the inflow current between the plurality of semiconductor switches using the magnetoresistance measurement method.

[0021] In one embodiment, the first current sensor and the second current sensor may be disposed at different locations from each other.

[0022] In one embodiment, the first current sensor and the second current sensor may be disposed at the same location.

[0023] In one embodiment, when the first current sensor is composed of a plurality of first current sensors, the plurality of first current sensors may be disposed at different locations from each other.

[0024] In one embodiment, when the first current sensor is composed of a plurality of first current sensors, two or more of the plurality of first current sensors may be disposed at the same location.

[0025] In one embodiment, when the second current sensor is composed of a plurality of second current sensors, the plurality of second current sensors may be disposed at different locations from each other.

[0026] In one embodiment, when the second current sensor is composed of a plurality of second current sensors, two or more of the plurality of second current sensors may be disposed at the same location.

[0027] In one embodiment, when the first current sensor and the second current sensor are each composed of a plurality of sensors, one of the plurality of first current sensors and the plurality of second current sensors can be set at the same location, and the other of the plurality of sensors can be set at other locations.

[0028] In one embodiment, when the first current sensor and the second current sensor are each composed of a plurality of sensors, at least one of the plurality of first current sensors and at least one of the plurality of second current sensors may be disposed at the same location.

[0029] In one embodiment, the control unit may determine whether the inflow current is the fault current based on different determination criteria of whether the inflow current is the fault current for each interval according to the inflow time of the inflow current.

[0030] In one embodiment, during a first interval from a first time to a second time after the inflow current flows in, the control unit determines whether it is the fault current based on any one of the first detection result and the second detection result.

[0031] In one embodiment, during a second interval from the second time to a third time after the first interval, the control unit determines whether the current is the fault current based on the other of the first detection result and the second detection result.

[0032] In one embodiment, the control unit may detect the change rate of the inflow current based on the first detection result and the second detection result, and determine whether it is the fault current based on different determination criteria of whether it is the fault current according to the detection results.

[0033] In one embodiment, if the change rate meets a certain change reference, the control unit may determine whether it is the fault current based on any one of the first detection result and the second detection result.

[0034] In one embodiment, if the change rate does not meet the certain change reference, the control unit may determine whether it is the fault current based on the other detection result of the first detection result and the second detection result.

[0035] In one embodiment, the control unit may compare the first detection result and the second detection result respectively with one or more reference currents of a first reference current and a second reference current greater than the first reference current, and determine whether it is the fault current based on the comparison result.

[0036] In one embodiment, if, according to the comparison result, the first detection result and the second detection result are greater than the first reference current, the control unit may determine that the inflow current corresponds to a fault current.

[0037] In one embodiment, if, according to the comparison result, the first detection result and the second detection result are less than the first reference current, the control unit may determine that the inflow current does not correspond to the fault current.

[0038] In one embodiment, if, according to the comparison result, the first detection result is less than the first reference current and the second detection result is greater than or equal to the second reference current, the control unit may determine that the inflow current meets the fault current.

[0039] In one embodiment, if, according to the comparison result, the first detection result is greater than the first reference current and the second detection result is less than the first reference current, the control unit may determine that the inflow current does not meet the fault current.

[0040] In one embodiment, if it is determined according to the determination result that the inflow current meets the fault current, the control unit may control a plurality of the gate drivers to cut off the inflow current.

[0041] In one embodiment, when one or more current sensors of the first current sensor and the second current sensor are respectively provided at the first portion and the third portion, the control unit can detect whether the semiconductor switch unit is abnormal based on the detection results of the first portion and the detection results of the third portion, and control the plurality of gate drivers according to the detection results.

[0042] In one embodiment, if a difference between a detection result of the first portion and a detection result of the third portion is greater than a reference difference, the control unit may detect that an abnormality has occurred in the semiconductor switch unit.

[0043] In one embodiment, if it is detected based on the detection result that an abnormality has occurred in the semiconductor switch unit, the control unit may control the plurality of gate drivers to cut off the inflow current.

[0044] In one embodiment, when at least two of the first to third parts are each provided with one or more current sensors of the first current sensor and the second current sensor, when the incoming current is cut off, the control unit can monitor the residual current of each of the at least two parts based on the detection results of each of the at least two parts, and detect whether the semiconductor switch unit is abnormal based on the monitoring results.

[0045] In one embodiment, if at least one residual current of the residual currents of the at least two locations is greater than a reference residual current, the control unit may detect that an abnormality has occurred in a semiconductor switch connected to the corresponding location.

[0046] In one embodiment, if the difference between any two residual currents of the at least two portions is greater than a reference current difference, the control unit may detect that an abnormality has occurred in a semiconductor switch provided between the corresponding portions.

[0047] The embodiments of the semiconductor circuit breaker are not limited to the above contents, and may also include other embodiments described in the following specific description or analogized / derived therefrom.

[0048] Effects of the Invention

[0049] According to the embodiments of the semiconductor circuit breaker of the present specification, by judging the fault current based on a plurality of detection results detected by different types of current sensors, it is possible to achieve an effect of accurately judging the fault current.

[0050] Therefore, it is possible to achieve the effect of preventing erroneous determination of a fault current and unnecessary circuit interruption.

[0051] Furthermore, by utilizing a plurality of detection results at both ends of the semiconductor switch unit, it is possible to achieve an effect of detecting whether the semiconductor switch is abnormal.

[0052] Effects according to the embodiments of the semiconductor circuit breaker described above are not limited to the above contents, and may include other effects described in the detailed description or inferred / derived therefrom. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 is a circuit diagram of a semiconductor circuit breaker according to an embodiment.

[0054] Figure 2a to Figure 2d It is shown Figure 1 Detailed schematic diagrams a to d of the semiconductor circuit breaker.

[0055] Figure 3 Graph for explaining the concept of fault current determination in each section of the semiconductor circuit breaker according to the embodiment.

[0056] Figure 4 : is a graph for explaining a fault current determination example of the semiconductor circuit breaker according to the embodiment. DETAILED DESCRIPTION

[0057] The technical terms used in this specification are only used to illustrate specific embodiments and are not intended to limit the present invention. In addition, unless otherwise clearly specified in the context, the singular expressions used in this specification include plural expressions. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the convenience of writing the specification, and they themselves do not have mutually distinguishable meanings or functions.

[0058] In the present specification, terms such as “compose” or “comprise” should not be interpreted as including all the various constituent elements or steps described in the specification, may not include some constituent elements or steps, or should be interpreted as further including other constituent elements or steps.

[0059] Furthermore, when describing the technology disclosed in this specification, if it is determined that the detailed description of the related known technology may make the gist of the technology disclosed in this specification unclear, the detailed description will be omitted.

[0060] In addition, the drawings are provided only to facilitate understanding of the embodiments disclosed in this specification. The technical ideas disclosed in this specification are not limited to the drawings, and it should be understood that the present invention includes all changes, equivalents and even substitutes made within the technical ideas and technical scope of the present invention. In addition, in addition to each embodiment described below, the combination of the embodiments as a change, equivalent or substitute within the idea and technical scope of the present invention can of course correspond to the idea and technical scope of the present invention.

[0061] First, in order to help fully understand the present invention, the basic principle of the present invention is explained: the present invention limits the output voltage of the gate driver of the semiconductor switch, which determines the current capacity output from the semiconductor switch, thereby reducing the maximum amount of current flowing through the semiconductor switch, thereby limiting the maximum amount of current applied from the system to the load. Therefore, if a noise overcurrent or surge current occurs, by suppressing the overcurrent below the allowable current of the semiconductor circuit breaker, the semiconductor circuit breaker can not cut off the circuit when the noise overcurrent or surge current occurs.

[0062] Figure 1 A circuit diagram showing a circuit structure of a semiconductor circuit breaker 10 according to an embodiment.

[0063] like Figure 1 As shown, the semiconductor circuit breaker 10 is disposed between the power supply portion G and the supply target portion S.

[0064] The semiconductor circuit breaker 10 includes: a semiconductor switch unit 110, which includes a plurality of semiconductor switches 111, 112 that can be turned on / off and connected in series with each other; a plurality of gate drivers 121, 122; one or more first current sensors 131; one or more second current sensors 132 and a control unit 140.

[0065] As described above, the semiconductor circuit breaker 10 includes: the semiconductor switch unit 110; a plurality of gate drivers 121, 122; one or more first current sensors 131, one or more second current sensors 132 and the control unit 140. The semiconductor circuit breaker 10 may also include a disconnect switch 150 and an overvoltage suppression unit 160.

[0066] Here, the power supply unit G and the supply target unit S may be different power systems from each other.

[0067] Alternatively, any one of the power supply section G and the supply target section S may be a power system, and the other may be a load.

[0068] In addition, the power supply section G and the supply target section S may both be electric power systems.

[0069] As an example, the power supply unit G and the supply target unit S may be different microgrids.

[0070] The power supply part G and the supply target part S are connected through the semiconductor circuit breaker 10, which can form a bidirectional current flow from the power supply part G to the supply target part S as well as a current flow from the supply target part S to the power supply part G.

[0071] In addition, the current flow from the power supply part G to the supply target part S, the current flow from the supply target part S to the power supply part G, and the bidirectional current flow between the power supply part G and the supply target part S can all be cut off by the semiconductor circuit breaker 10.

[0072] In order to achieve such bidirectional cutoff, the first semiconductor switch 111 and the second semiconductor switch 112 can not only cut off the current flowing from the power supply part G to the supply target part S, but also cut off the current flowing from the supply target part S to the power supply part G.

[0073] As an example, the first semiconductor switch 111 and the second semiconductor switch 112 may be semiconductor switches composed of N-Channel MOSFET (N-channel Metal Oxide Semiconductor Field Effect Transistor) elements with sources and drains arranged in opposite directions.

[0074] The semiconductor switch unit 110 includes a plurality of semiconductor switches 111 and 112 , and determines a maximum value of a current supplied from the power supply unit G to the supply target unit S according to a gate voltage applied to a gate terminal.

[0075] The plurality of semiconductor switches 111 , 112 may include the first semiconductor switch 111 and the second semiconductor switch 112 .

[0076] The first semiconductor switch 111 and the second semiconductor switch 112 may further include a first diode 111D and a second diode 112D arranged in the opposite direction to the current flow to prevent the MOSFET element from being damaged due to a reverse voltage when the circuit is cut off due to a fault current.

[0077] In this case, the anode and cathode of each of the first diode 111D and the second diode 112D are connected to the source terminal and the drain terminal of each of the MOSFET elements 111 and 112, respectively.

[0078] Therefore, the first diode 111D may be connected in parallel with the MOSFET element of the first semiconductor switch 111 and arranged in the opposite direction to the current flowing from the power supply part G to the supply target part S.

[0079] In addition, the second diode 112D may be connected in parallel with the MOSFET element of the second semiconductor switch 112 and arranged in the opposite direction to the current flowing from the supply target part S to the power supply part G.

[0080] As described above, the semiconductor circuit breaker 10 may be provided with the first semiconductor switch 111 and the second semiconductor switch 112 configured in a complementary symmetrical form, so as to cut off the fault current flowing in both directions.

[0081] On the other hand, in the following description, for the sake of convenience, it is assumed that the power supply unit G is a power system and the supply target unit S is a load. However, as described above, although the semiconductor circuit breaker 10 according to the embodiment of the present invention is formed to be able to cut off both bidirectional fault currents, the present invention is not limited thereto.

[0082] The plurality of gate drivers 121 and 122 include a plurality of gate drivers 121 and 122 for applying the gate voltages to the plurality of semiconductor switches 111 and 112 , respectively.

[0083] The plurality of gate drivers 121 , 122 may include the first gate driver 121 and the second gate driver 122 .

[0084] The first gate driver 121 and the second gate driver 122 may apply gate voltages to the first semiconductor switch 111 and the second semiconductor switch 112 constituting the semiconductor switch unit 110 , respectively, according to the control of the control unit 140 .

[0085] In this case, if a gate voltage exceeding the respective threshold voltages of the first semiconductor switch 111 and the second semiconductor switch 112 is applied, the output resistance value of the first semiconductor switch 111 and the second semiconductor switch 112 will be smaller than the input resistance value, thereby turning on the input and output ends of the first semiconductor switch 111 and the second semiconductor switch 112, thereby forming a circuit between the power supply unit G and the supply target unit S.

[0086] In this case, as the applied gate voltage increases, the resistance values ​​of the output terminals of the first semiconductor switch 111 and the second semiconductor switch 112 may decrease.

[0087] Therefore, by adjusting the gate voltage to adjust the resistance value of the output end of the first semiconductor switch 111 and the second semiconductor switch 112, the current can flow more easily, and the current value allowed by the first semiconductor switch 111 and the second semiconductor switch 112, that is, the allowable current capacity, will also increase.

[0088] Therefore, a larger current can be supplied from the power supply portion G to the supply target portion S.

[0089] On the contrary, if the applied gate voltage is less than the respective threshold voltages of the first semiconductor switch 111 and the second semiconductor switch 112, or no gate voltage is applied, the resistance value of the output end of the first semiconductor switch 111 and the second semiconductor switch 112 may be the same as or greater than the input end resistance value.

[0090] Therefore, the input and output terminals of the first and second semiconductor switches 111 and 112 may not be turned on, so that the power supply portion G and the supply target portion S may be electrically separated (insulated) and the circuit connection may be cut off.

[0091] As described above, in the case of the first semiconductor switch 111 and the second semiconductor switch 112, the resistance values ​​at the output ends of the first semiconductor switch 111 and the second semiconductor switch 112 will be different depending on the voltage applied to the gate terminal by the plurality of gate drivers 121 and 122, that is, the output voltage of the plurality of gate drivers 121 and 122.

[0092] Furthermore, the magnitude of the drain current, that is, the magnitude of the current supplied by the first semiconductor switch 111 and the second semiconductor switch 112 , can be determined according to the resistance values ​​of the output terminals of the first semiconductor switch 111 and the second semiconductor switch 112 .

[0093] Therefore, the allowable current capacity of the first semiconductor switch 111 and the second semiconductor switch 112 can be determined according to the output voltage of the plurality of gate drivers 121 and 122, so that the current supplied from the power supply part G to the supply target part S can be determined.

[0094] The first current sensor 131 is provided in one or more locations, and is provided at a first location P1 at the front end of the semiconductor switch unit 110, a second location P2 between a plurality of the semiconductor switches 111 and 112, and a third location P3 at the rear end of the semiconductor switch unit 110, so as to detect the inflow current flowing into the semiconductor switch unit 110.

[0095] The second current sensor 132 is provided at least one and is of a different type from the first current sensor 131 , and is provided at at least one of the first portion P1 , the second portion P2 , and the third portion P3 , so as to detect the inflow current.

[0096] That is, the one or more first current sensors 131 and the one or more second current sensors 132 may be respectively provided at one or more locations among the first location P1 , the second location P2 , and the third location P3 .

[0097] That is to say, Figure 1 As shown, the first current sensor 131 may be disposed at the first position P1 , and the second current sensor 132 may be disposed at the second position P2 .

[0098] One of the first current sensor 131 and the second current sensor 132 may be a sensor that detects current using a Hall Effect measurement method.

[0099] That is, it may be a Hall sensor.

[0100] In addition, one of the first current sensor 131 and the second current sensor 132 may be a sensor that detects current in a magnetoresistive manner.

[0101] That is, it may be a GMR (Giant Magneto Resistive) sensor.

[0102] Although the Hall sensor has strong anti-noise capability, its detection speed is slower than that of the GMR sensor. Although the GMR sensor is more sensitive to noise, its detection speed is faster than that of the Hall sensor. Therefore, if the GMR sensor is used to detect current in a low-speed area where the current magnitude and rise time are low and the noise is high, the accuracy of the detection result will be lower than that of the Hall sensor due to the influence of noise. If the Hall sensor is used to detect current in a high-speed area where the current magnitude and rise time are high, fast detection cannot be achieved and the accuracy of the detection result will be lower than that of the GMR sensor.

[0103] Therefore, accurate current detection can be achieved by using the Hall sensor to detect current in a low-speed region where the current magnitude and rise time are low, and using the GMR sensor to detect current in a high-speed region where the current magnitude and rise time are high.

[0104] Preferably, in the first current sensor 131 and the second current sensor 132 , the first current sensor 131 may be a Hall sensor, and the second current sensor 132 may be a GMR sensor.

[0105] That is, the semiconductor circuit breaker 10 can determine whether the inflow current is the fault current based on the results of different types of current sensors detecting the inflow current.

[0106] Therefore, the semiconductor circuit breaker 10 can determine whether it is the fault current based on different types of detection results detected by different types of current sensors, thereby achieving more accurate and appropriate determination of whether it is the fault current.

[0107] In addition, if any one of the first current sensor 131 and the second current sensor 132 is a sensor using the magnetoresistance measurement method, the sensor using the magnetoresistance measurement method may be provided at the second portion P2 so as to detect the inflow current between the plurality of semiconductor switches 111 and 112 using the magnetoresistance measurement method.

[0108] That is, if the second current sensor 132 is the GMR sensor, the second current sensor 132 may be disposed at the second location, so as to detect the inflow current between the plurality of semiconductor switches 111 , 112 by the magnetoresistance measurement method.

[0109] As described above, if the GMR sensor is provided at the second portion P2 between the plurality of semiconductor switches 111 and 112 , the inflow current flowing between the plurality of semiconductor switches 111 and 112 can be detected more quickly than the Hall sensor.

[0110] In addition, when the inflow current flows between the plurality of semiconductor switches 111 and 112, the fluctuation increases due to the plurality of semiconductor switches 111 and 112. If the GMR sensor that detects the relative speed change of the current based on the magnetoresistance measurement method is set at the second part P2, the fluctuation of the inflow current can also be quickly detected.

[0111] Therefore, for a current such as a fault current that changes rapidly and greatly, it is possible to quickly determine whether it is a fault current and take countermeasure action.

[0112] The first current sensor 131 and the second current sensor 132 may be disposed at different locations from each other.

[0113] That is to say, Figure 1 As shown, the first current sensor 131 may be disposed at the first position P1 , and the second current sensor 132 may be disposed at the second position P2 .

[0114] The first current sensor 131 and the second current sensor 132 may also be disposed at the same location.

[0115] That is to say, Figure 2a As shown, the first current sensor 131 and the second current sensor 132 may be disposed at the second position P2 .

[0116] In addition, if the first current sensor 131 is provided in plural, the plural first current sensors 131 may be provided at different locations from each other.

[0117] That is to say, Figure 2b As shown, the 1-1st current sensor 131a may be disposed at the first position P1, and the 1-2nd current sensor 131b may be disposed at the third position P3.

[0118] If a plurality of the second current sensors 132 are provided, the plurality of second current sensors 132 may be provided at different locations from each other.

[0119] That is to say, Figure 2b As shown, the 2-1st current sensor 132a can be set at the second position P2, and the 2-2nd current sensor 132b can be set at the third position P3.

[0120] In addition, if a plurality of first current sensors 131 are provided, two or more of the plurality of first current sensors 131 may be provided at the same location.

[0121] That is to say, Figure 2cAs shown, both the 1-1st current sensor 131a and the 1-2nd current sensor 131b may be disposed at the first portion P1.

[0122] In addition, if the second current sensor 132 is also provided in plural, two or more of the plural second current sensors 132 may also be provided in the same position.

[0123] If the first current sensor 131 and the second current sensor 132 are respectively provided in plural, the plural sensors of one of the plural first current sensors 131 and the plural second current sensors 132 may be provided in the same position, and the plural sensors of the other may be provided in other positions.

[0124] That is to say, Figure 2c As shown, in the first current sensor 131, the 1-1 current sensor 131a and the 1-2 current sensor 131b are arranged at the first position P1, and in the second current sensor 132, the 2-1 current sensor 132a is arranged at the second position P2, and the 2-2 current sensor 132b is arranged at the third position P3.

[0125] If the first current sensor 131 and the second current sensor 132 are respectively provided in plural numbers, at least one of the plural first current sensors 131 and at least one of the plural second current sensors 132 are provided in the same location.

[0126] That is to say, Figure 2d As shown, in the first current sensor 131, the 1-1 current sensor 131a is arranged at the first position P1, and the 1-2 current sensor 131b is arranged at the second position P2. In the second current sensor 132, the 2-1 current sensor 132a is arranged at the second position P2, and the 2-2 current sensor 132b is arranged at the third position P3.

[0127] The first current sensor 131 and the second current sensor 132 may detect the inflow current flowing into the semiconductor switch unit 110 and transmit the detection result to the control unit 140 .

[0128] The control unit 140 determines whether the inflow current is a fault current based on the first detection result of the first current sensor 131 and the second detection result of the second current sensor 132 , and controls the plurality of gate drivers 121 and 122 according to the determination result.

[0129] The control unit 140 may determine whether the inflow current is the fault current based on different determination criteria of whether the inflow current is the fault current for each interval according to the inflow time of the inflow current.

[0130] That is to say, Figure 3 As shown, according to the inflow time of the inflow current, it can be divided into the zeroth interval S1, the first interval S2 and the second interval S3. For each of the zeroth interval S1, the first interval S2 and the second interval S3, it can be judged whether it is the fault current based on different judgment criteria of whether it is the fault current.

[0131] Among them, the zeroth interval S1 can be the initial interval in which the inflow current flows in, the first interval S2 can be a fast interval in which the increase rate of the inflow current after the zeroth interval S1 is above a certain increase benchmark, and the second interval S3 can be a slow interval in which the increase rate of the inflow current after the first interval S2 is less than the certain increase benchmark.

[0132] Until the first time (t off_1 ), the control unit 140 may determine whether it is the fault current based on the DESAT voltage detection result of the semiconductor switch unit 110.

[0133] At the first time (t off_1 ) to the second time (t off_2 ), during the first interval S2 from the start of the detection result to the end of the detection result, the control unit 140 can determine whether it is the fault current based on any one of the first detection result and the second detection result.

[0134] That is, when the increasing speed of the inflow current is faster than the certain increase reference, the first time (t off_1 ) to the second time (t off_2 ), the control unit 140 can determine whether it is the fault current based on any one of the first detection result and the second detection result.

[0135] At the first time (t off_1 ) to the second time (t off_2 ), during the first interval S2 of the control unit 140, the control unit 140 can determine whether it is the fault current based on the detection result corresponding to the GMR sensor in the first detection result and the second detection result.

[0136] That is, if the first current sensor 131 is the Hall sensor and the second current sensor 132 is the GMR sensor, during the first interval S2 , it can be determined whether it is the fault current based on the detection result of the second current sensor 132 .

[0137] That is, when the first interval S1 corresponds to the case where the increasing speed of the inflow current is faster than the certain increase reference, the control unit 140 may determine whether it is the fault current based on the detection result of the GMR sensor.

[0138] Therefore, during the first interval S1 in which the increasing speed of the inflow current is faster than the certain increase benchmark, it is determined whether it is the fault current based on the detection result of the GMR sensor which has a faster detection speed of the inflow current, so that it is possible to quickly determine whether it is the fault current in the interval in which the inflow current increases rapidly.

[0139] The control unit 140 may control the second time (t off_2 ) to a third time, during the second interval S3, whether it is the fault current is determined based on the other of the first detection result and the second detection result.

[0140] That is, the second time (t off_2 ), the control unit 140 can determine whether it is the fault current based on the other one of the first detection result and the second detection result which is different from the detection result based on the first interval S2.

[0141] At the second time (t off_2 ) to a third time, the control unit 140 may determine whether it is the fault current based on the first detection result and the second detection result corresponding to the Hall sensor.

[0142] That is to say, if the first current sensor 131 is the Hall sensor, and the second current sensor 132 is the GMR sensor, and during the first interval S2, it is determined whether it is the fault current based on the detection result of the GMR sensor, then during the second interval S3, it can be determined whether it is the fault current based on the detection result of the first current sensor 131.

[0143] That is, if the second interval S3 corresponds to the increasing speed of the inflow current being slower than the certain increase reference, the control unit 140 may determine whether it is the fault current based on the detection result of the Hall sensor.

[0144] Therefore, during the second interval S2 where the increasing speed of the inflow current is slower than the certain increase benchmark, it is possible to determine whether it is the fault current based on the detection result of the Hall sensor having a strong noise resistance capability to the inflow current, thereby accurately determining whether it is the fault current in the interval with more noise.

[0145] As mentioned above, Figure 3 As shown, the control unit 140 can be configured to determine whether it is the fault current based on the DESAT voltage detection result during the zeroth interval S1, based on the detection result of the GMR sensor during the first interval S2, and based on the detection result of the Hall sensor during the second interval S3.

[0146] In addition, the control unit 140 may detect the change rate of the inflow current based on the first detection result and the second detection result, and determine whether it is the fault current based on different determination criteria of whether it is the fault current according to the detection result.

[0147] The control unit 140 may detect the change rate based on the first detection result and the second detection result, and determine whether it is the fault current based on different determination criteria of whether it is the fault current according to a comparison result of the change rate with a certain change reference.

[0148] When the change rate meets the certain change reference, the control unit 140 may determine whether it is the fault current based on any one of the first detection result and the second detection result.

[0149] When the change rate meets the certain change reference, the control unit 140 may determine whether it is the fault current based on the detection result corresponding to the GMR sensor among the first detection result and the second detection result.

[0150] That is, when the change rate meets the certain change standard and changes rapidly, the control unit 140 can determine whether it is the fault current based on the detection result of the GMR sensor which is easy to detect at high speed.

[0151] That is, when the first current sensor 131 is the Hall sensor and the second current sensor 132 is the GMR sensor, if the change rate meets the certain change reference, it can be determined based on the second detection result whether it is the fault current.

[0152] When the change rate does not meet the certain change reference, the control unit 140 may determine whether it is the fault current based on the other of the first detection result and the second detection result.

[0153] When the change rate does not meet the certain change reference, the control unit 140 may determine whether it is the fault current based on the detection result corresponding to the Hall sensor in the first detection result and the second detection result.

[0154] That is, when the change rate does not meet the certain change standard and changes slowly, the control unit 140 can determine whether it is the fault current based on the detection result of the Hall sensor that is easy to detect at a low speed.

[0155] That is, when the first current sensor 131 is the Hall sensor and the second current sensor 132 is the GMR sensor, if the change rate does not meet the certain change reference, it can be determined whether it is the fault current based on the first detection result.

[0156] As mentioned above, Figure 4 As shown, if the change rate meets the certain change benchmark, the control unit 140 can determine whether it is the fault current based on the detection result of the GMR sensor; if the change rate does not meet the certain change benchmark, the control unit 140 can determine whether it is the fault current based on the detection result of the Hall sensor.

[0157] The control unit 140 may compare the first detection result and the second detection result with one or more of a first reference current and a second reference current greater than the first reference current, respectively, and determine whether it is the fault current according to the comparison result.

[0158] The first reference current may be an overcurrent reference for the semiconductor circuit breaker 10 to operate, and the second reference current may be a maximum overcurrent reference for the semiconductor circuit breaker 10 to burn out.

[0159] In the following, for the sake of convenience, it is assumed that the first detection result is the detection result of the Hall sensor and the second detection result is the detection result of the GMR sensor.

[0160] According to the comparison result, if the first detection result and the second detection result are greater than the first reference current, the control unit 140 may determine that the inflow current corresponds to a fault current.

[0161] That is, if the detection result of the Hall sensor and the detection result of the GMR sensor are equal to or higher than the first reference current that meets the overcurrent standard, the control unit 140 may determine that a fault current has occurred.

[0162] According to the comparison result, if the first detection result and the second detection result are smaller than the first reference current, the control unit 140 may determine that the inflow current does not correspond to the fault current.

[0163] That is, if the detection result of the Hall sensor and the detection result of the GMR sensor are smaller than the first reference current that meets the overcurrent reference, the control unit 140 may determine that no fault current has occurred.

[0164] According to the comparison result, if the first detection result is less than the first reference current and the second detection result is greater than or equal to the second reference current, the control unit 140 may determine that the inflow current meets the fault current.

[0165] That is, if the detection result of the Hall sensor is less than the first reference current that meets the overcurrent benchmark, and the detection result of the GMR sensor is greater than the second reference current that meets the maximum overcurrent benchmark, the control unit 140 can determine that the detection result of the GMR sensor does not meet the noise, thereby determining that a fault current has occurred.

[0166] In addition, according to the comparison result, if the first detection result is smaller than the first reference current and the second detection result is smaller than the second reference current, the control unit 140 may determine that the inflow current does not correspond to the fault current.

[0167] That is, if the detection result of the Hall sensor is less than the first reference current that meets the overcurrent reference, and the detection result of the GMR sensor is less than the second reference current that meets the maximum overcurrent reference, the control unit 140 can determine that the detection result of the GMR sensor meets the noise, thereby determining that no fault current has occurred.

[0168] According to the comparison result, if the first detection result is greater than the first reference current and the second detection result is less than the first reference current, the control unit 140 may determine that the inflow current does not meet the fault current.

[0169] That is, if the detection result of the Hall sensor is above the first reference current that meets the overcurrent benchmark, and the detection result of the GMR sensor is less than the first reference current that meets the overcurrent benchmark, then the control unit 140 can determine that the detection result of the Hall sensor meets the temporary increase, thereby determining that no fault current has occurred.

[0170] As mentioned above, Figure 4 As shown, when the first detection result and the second detection result are less than the first reference current Ic, or the first detection result is less than the first reference current Ic and the second detection result is above the first reference current Ic, or the first detection result is above the first reference current Ic and the second detection result is less than the first reference current Ic, the control unit 140 can determine that no fault current caused by noise has occurred.

[0171] In addition, if the first detection result and the second detection result are above the first reference current Ic, or the first detection result is less than the first reference current Ic and the second detection result is above the second reference current (Ifault), the control unit 140 can determine that a fault current has occurred.

[0172] According to the determination result, if the control unit 140 determines that the inflow current meets the fault current, the control unit 140 may control the plurality of gate drivers 121 and 122 to cut off the inflow current.

[0173] In addition, if one or more of the first current sensor 131 and the second current sensor 132 are respectively provided at the first part P1 and the third part P3, the control unit 140 can detect whether the semiconductor switch unit 110 is abnormal based on the detection results of the first part P1 and the detection results of the third part P3, thereby controlling the plurality of gate drivers 121, 122 according to the detection results.

[0174] That is, the control unit 140 may detect whether the semiconductor switch unit 110 is abnormal based on the result of the inflow current detected at both ends of the semiconductor switch unit 110 .

[0175] That is, by comparing the detection result of the first part P1 with the detection result of the third part P3 , it is detected whether the semiconductor switch unit 110 is abnormal according to the difference between the two detection results.

[0176] If the difference between the detection result of the first portion P1 and the detection result of the third portion P3 is greater than a reference difference, the control unit 140 may detect that an abnormality has occurred in the semiconductor switch unit 110 .

[0177] That is, if the difference between the detection result of the first part P1 and the detection result of the third part P3 is greater than the reference difference, the control unit 140 can determine that an abnormality has occurred in the semiconductor switch unit 110, resulting in inconsistency between the current detection result of the first part P1 corresponding to the front end of the semiconductor switch unit 110 and the current detection result of the third part P1 corresponding to the rear end of the semiconductor switch unit 110, thereby detecting that an abnormality has occurred in the semiconductor switch unit 110.

[0178] Therefore, when one or more of the first current sensor 131 and the second current sensor 132 are respectively provided at the first portion P1 and the third portion P3 , the control unit 140 can detect whether the semiconductor switch unit 110 is abnormal.

[0179] If it is detected according to the detection result that the semiconductor switch unit 110 is abnormal, the control unit 140 may control the plurality of gate drivers 121 and 122 to cut off the inflow current.

[0180] In addition, if at least two of the first part P1 to the third part P3 are respectively provided with one or more of the first current sensor 131 and the second current sensor 132, then when the incoming current is cut off, the control unit 140 can monitor the residual current of each of the at least two parts based on the detection results of each of the at least two parts, and detect whether the semiconductor switch unit 110 is abnormal based on the monitoring results.

[0181] That is, when at least two of the first part P1 to the third part P3 are respectively provided with one or more of the first current sensor 131 and the second current sensor 132, and the inflow current is cut off, the control unit 140 can detect whether the semiconductor switch unit 110 is abnormal based on the monitoring results of the residual current of each of the at least two parts.

[0182] The case where the inflow current is cut off may be a state where no current flows in the semiconductor circuit breaker circuit 10 , or a state where the inflow current flows and is cut off.

[0183] That is, the residual current may refer to a current remaining in the at least two locations before or after the inflow current flows into the semiconductor circuit breaker circuit 10 .

[0184] As described above, at least two of the first to third portions P1 to P3 are provided with current sensors, respectively, so that whether the plurality of semiconductor switches 111 and 112 are abnormal can be detected respectively by monitoring the residual current of each of the at least two portions.

[0185] If at least one of the residual currents in the at least two locations is equal to or greater than a reference residual current, the control unit 140 may detect that an abnormality has occurred in a semiconductor switch connected to the corresponding location.

[0186] That is, if the residual current is greater than the reference residual current, the control unit 140 can determine that an abnormality has occurred in the semiconductor switch connected to the corresponding portion, causing the magnitude of the residual current to be greater than the reference residual current, thereby detecting that an abnormality has occurred in the semiconductor switch connected to the corresponding portion.

[0187] That is to say, if the magnitude of the residual current in the first part P1 is greater than the reference residual current magnitude, it can be detected that an abnormality has occurred in the first semiconductor switch 111; if the magnitude of the residual current in the second part P2 is greater than the reference residual current magnitude, it can be detected that an abnormality has occurred in the first semiconductor switch 111 and the second semiconductor switch 112; if the magnitude of the residual current in the third part P3 is greater than the reference residual current magnitude, it can be detected that an abnormality has occurred in the second semiconductor switch 112.

[0188] Furthermore, if a difference between any two of the residual currents of the at least two locations is greater than a reference current difference, the control unit 140 may detect that an abnormality has occurred in a semiconductor switch provided between the corresponding locations.

[0189] That is, if the difference between any two of the residual currents of the at least two parts is greater than the reference current difference, the control unit 140 can determine that an abnormality has occurred in the semiconductor switch provided between the corresponding parts, etc., and the difference between the current at one end and the current at the other end is greater than the reference current difference, thereby detecting that an abnormality has occurred in the semiconductor switch provided between the corresponding parts, etc.

[0190] That is to say, if the difference between the residual current of the first part P1 and the residual current of the second part P2 is greater than the reference current difference, it is detected that an abnormality has occurred in the first semiconductor switch 111; if the difference between the residual current of the second part P2 and the residual current of the second part P2 is greater than the reference current difference, it is detected that an abnormality has occurred in the second semiconductor switch 111.

[0191] As described above, in the case where at least two of the first part P1 to the third part P3 are respectively provided with one or more of the first current sensor 131 and the second current sensor 132, preferably, at least one of the first current sensor 131 and the second current sensor 132 can be respectively provided in the first part P1 to the third part P3.

[0192] Therefore, the control unit 140 can monitor the residual current of each of the first part P1 to the third part P3.

[0193] The control unit 140 may control the plurality of gate drivers 121 and 122 to apply voltages to gate terminals of the first semiconductor switch 111 and the second semiconductor switch 112 .

[0194] As an example, the control unit 140 may control the output voltages of the plurality of gate drivers 121 and 122 so that the plurality of gate drivers 121 and 122 apply a voltage greater than the threshold voltage to the gate terminals of the first semiconductor switch 111 and the second semiconductor switch 112 .

[0195] In this case, since the resistance of the output ends of the first semiconductor switch 111 and the second semiconductor switch 112 is reduced according to the voltage (gate driver output voltage) applied by the plurality of gate drivers 121 and 122, the current supplied from the power supply unit G can be applied to the supply target unit S through the first semiconductor switch 111 and the second semiconductor switch 112.

[0196] On the other hand, as described above, by utilizing the characteristics of the allowable current capacity of the first semiconductor switch 111 and the second semiconductor switch 112 determined by the output voltage applied from the plurality of gate drivers 121 and 122, the control unit 140 can limit the magnitude of the current flowing from any one system to another system via the semiconductor circuit breaker 10.

[0197] That is, the control unit 140 uses the first current sensor 131 and the second current sensor 132 to detect the current flowing from the power supply unit G to the supply target unit S or from the supply target unit to the power supply unit G. If an overcurrent of a preset size (normal current size) or greater than the first reference current is detected, the plurality of gate drivers 121, 122 can be controlled so that the plurality of gate drivers 121, 122 apply a voltage less than the normal state to the gate terminals of the first semiconductor switch 111 and the second semiconductor switch 112.

[0198] In this case, the allowable current capacity of the first semiconductor switch 121 and the second semiconductor switch 122 is reduced according to the reduced gate driver output voltage, and as a result, the magnitude of the current output from the semiconductor switch unit 110 is limited.

[0199] Therefore, a limited current that will not be cut off in the semiconductor circuit breaker 10 is output from the semiconductor switch unit 110, thereby preventing the connection between the power supply unit G and the supply target unit S from being cut off due to a temporary overcurrent such as a surge current or a noise overcurrent.

[0200] In addition, the control unit 140 may control the disconnecting switch 150 so that the semiconductor circuit breaker 10 is connected to the power supply unit G (disconnecting switch is turned on) or disconnected (disconnecting switch is turned off).

[0201] If the semiconductor circuit breaker 10 is connected to the power supply unit G, the power supply unit G and the supply target unit S can be turned on and electrically connected via the semiconductor circuit breaker 10, and a current corresponding to the allowable current capacity of the semiconductor switch unit 110 is applied to another system.

[0202] On the other hand, when the power supply unit G is conductive with the supply target unit S, the control unit 140 can detect whether an abnormal current flows from the power supply unit G or the supply target unit S into another system by using the detection values ​​collected by the first current sensor 131 and the second current sensor 132.

[0203] The abnormal current may include a noise-induced overcurrent that temporarily increases and then returns to a normal level.

[0204] The abnormal current is an overcurrent exceeding a normal range, and may include a short-circuit current or a ground current caused by a failure of any one of the power supply unit G and the supply target unit S.

[0205] The short-circuit current or grounding current (hereinafter referred to as fault current) is different from the surge current or noise overcurrent (hereinafter collectively referred to as noise overcurrent) that is temporarily applied and then returns to normal. If it is supplied to the load or another system, it may burn the equipment of the load or another system.

[0206] Therefore, when the control unit 140 detects an abnormal current, the fault current and the noise overcurrent can be distinguished based on the magnitude of the detected overcurrent or the duration of the overcurrent.

[0207] Also, if the detected overcurrent is a fault current, the semiconductor switch part 110 and the cut-off switch 150 may be controlled to cut off the connection between the power supply part G and the supply target part S.

[0208] On the contrary, if the detected overcurrent is a noise-induced overcurrent, the control unit 140 may limit the output voltages of the plurality of gate drivers 121 and 122 as described above, thereby limiting the allowable current capacity of the semiconductor switch unit 110 .

[0209] Therefore, the magnitude of the current output from the semiconductor switch unit 110 is suppressed to be less than the magnitude of the current allowed by the semiconductor circuit breaker 10 , thereby preventing unnecessary circuit disconnection of the semiconductor circuit breaker 10 due to the noise overcurrent.

[0210] Furthermore, if the detection results of the first current sensor 131 and the second current sensor 132 indicate that the noise overcurrent generated in any one of the systems disappears, the control unit 140 may restore the current flowing from any one of the systems to the other system to a normal level.

[0211] In this way, the control unit 140 can restore the output voltages of the plurality of gate drivers 121 and 122 to a normal state, thereby restoring the allowable current capacity of the semiconductor switch unit 110 .

[0212] In addition, due to the characteristics of the temporary noise overcurrent, the control unit 140 can of course limit the output voltages of the plurality of gate drivers 121 and 122 within a preset time period when the noise overcurrent is detected.

[0213] In this case, when the noise overcurrent disappears sufficiently after a preset time, the control unit 140 can restore the output voltages of the plurality of gate drivers 121 and 122 to a normal state.

[0214] To this end, the control unit 140 may also include a timer (not shown) for checking whether the certain time has passed.

[0215] On the other hand, in the above description, the semiconductor switch includes an N-channel MOSFET element as an example, but the present invention is of course not limited to this.

[0216] As an example, in the first semiconductor switch 111 and the second semiconductor switch 112, of course, all elements that can be turned on / off by using the gate driver voltage applied by the control unit 140, such as IGBT, GTO, IGCT, etc., can be used instead of the MOSFET element.

[0217] The disconnector 150 can disconnect the connection from any one system to the semiconductor circuit breaker 10 and another system.

[0218] The disconnect switch 150 may be a mechanical switch that can physically insulate the semiconductor circuit breaker 10 and disconnect the semiconductor circuit breaker 10 from the faulty power system.

[0219] like Figure 1 As shown, the disconnect switch 150 may be disposed between the power supply unit G and the semiconductor switch unit 110 .

[0220] In addition, the position of the disconnect switch 150 is not limited thereto, and can be disposed at other positions (for example, between the supply target portion S and the semiconductor switch portion 110 ).

[0221] When the semiconductor circuit breaker 10 is disconnected due to a fault current, the overvoltage suppression unit 160 can prevent an overvoltage from being formed at both ends of the semiconductor switch unit 110 due to a residual current.

[0222] The overvoltage suppression unit 160 may include a snubber circuit or an element for suppressing overvoltage, such as a TVS (Transient Voltage Suppressor) element.

[0223] Alternatively, the overvoltage suppression unit 160 may be formed of at least one diode and a resistor, and include a free wheeling circuit or the like respectively connected to both ends of the semiconductor switch unit 110 .

[0224] Although embodiments of semiconductor circuit breakers have been described so far, the described embodiments may be modified and altered in various ways without departing from the scope of the present invention. Of course, the scope of the present invention should not be limited to the described embodiments, but should be determined by the claims described below and the equivalents of the claims.

[0225] Description of Reference Numerals

[0226] 10: Semiconductor circuit breaker 110: Semiconductor switch unit

[0227] 111: first semiconductor switch 112: second semiconductor switch

[0228] 121: first gate driver 122: second gate driver

[0229] 131: first current sensor 132: second current sensor

[0230] 140: Control unit 150: Cut-off switch

[0231] 160: Overvoltage suppression unit

Claims

1. A semiconductor circuit breaker, arranged between a power supply unit and a supply target unit, characterized in that: include: a semiconductor switch section including a plurality of semiconductor switches, wherein the plurality of semiconductor switches determine a maximum magnitude of a current supplied from the power supply section to the supply target section according to a gate voltage applied to a gate terminal; A plurality of gate drivers for applying the gate voltage to each of the plurality of semiconductor switches; One or more first current sensors are provided at one or more of a first position at the front end of the semiconductor switch unit, a second position between the plurality of semiconductor switches, and a third position at the rear end of the semiconductor switch unit, and detect an inflow current flowing into the semiconductor switch unit; One or more second current sensors of a different type from the first current sensor, disposed at one or more of the first portion, the second portion, and the third portion, to detect the inflow current; as well as The control unit determines whether the inflow current is a fault current based on a first detection result of the first current sensor and a second detection result of the second current sensor, and controls the plurality of gate drivers according to the determination result.

2. The semiconductor circuit breaker according to claim 1, characterized in that One of the first current sensor and the second current sensor is a sensor using a Hall effect measurement method.

3. The semiconductor circuit breaker according to claim 1, characterized in that One of the first current sensor and the second current sensor is a magnetoresistive measurement sensor.

4. The semiconductor circuit breaker according to claim 3, characterized in that The sensor using the magnetoresistance measurement method is provided at the second location, and detects the inflow current between the plurality of semiconductor switches using the magnetoresistance measurement method.

5. The semiconductor circuit breaker according to claim 1, characterized in that The first current sensor and the second current sensor are disposed at different locations from each other.

6. The semiconductor circuit breaker according to claim 1, characterized in that The first current sensor and the second current sensor are arranged at the same location.

7. The semiconductor circuit breaker according to claim 1, characterized in that The control unit determines whether the current is the fault current based on different determination criteria of whether the current is the fault current for each section according to the inflow time of the inflow current.

8. The semiconductor circuit breaker according to claim 7, characterized in that During a first interval from a first time to a second time after the inflow current flows in, the control unit determines whether it is the fault current based on any one of the first detection result and the second detection result; as well as During a second interval from the second time to a third time after the first interval, the control unit determines whether the current is the fault current based on the other of the first detection result and the second detection result.

9. The semiconductor circuit breaker according to claim 1, characterized in that The control unit detects a change rate of the inflow current based on the first detection result and the second detection result, and determines whether the inflow current is the fault current based on different determination criteria of whether the inflow current is the fault current according to the detection result.

10. The semiconductor circuit breaker according to claim 9, characterized in that If the change rate meets a certain change standard, the control unit determines whether it is the fault current based on any one of the first detection result and the second detection result; as well as If the change rate does not meet the certain change reference, the control unit determines whether it is the fault current based on the other of the first detection result and the second detection result.

11. The semiconductor circuit breaker according to claim 1, characterized in that The control unit compares each of the first detection result and the second detection result with one or more of a first reference current and a second reference current greater than the first reference current, and determines whether the current is the fault current based on the comparison result.

12. The semiconductor circuit breaker according to claim 11, characterized in that If, according to the comparison result, the first detection result and the second detection result are greater than the first reference current, or the first detection result is less than the first reference current and the second detection result is greater than the second reference current, the control unit determines that the inflow current meets the fault current.

13. The semiconductor circuit breaker according to claim 11, characterized in that If, according to the comparison result, the first detection result and the second detection result are less than the first reference current, or the first detection result is greater than the first reference current and the second detection result is less than the first reference current, the control unit determines that the inflow current does not meet the fault current.

14. The semiconductor circuit breaker according to claim 1, characterized in that If it is determined according to the determination result that the inflow current corresponds to a fault current, the control unit controls the plurality of gate drivers to cut off the inflow current.

15. The semiconductor circuit breaker according to claim 1, characterized in that When one or more current sensors of the first current sensor and the second current sensor are provided at each of the first location and the third location, The control unit detects whether the semiconductor switch unit is abnormal based on the detection result of the first part and the detection result of the third part, and controls the plurality of gate drivers according to the detection result.

16. The semiconductor circuit breaker according to claim 15, characterized in that The control unit detects that an abnormality has occurred in the semiconductor switch unit if a difference between the detection result of the first portion and the detection result of the third portion is equal to or larger than a reference difference.

17. The semiconductor circuit breaker according to claim 15, characterized in that If it is detected from the detection result that an abnormality has occurred in the semiconductor switch section, the control section controls the plurality of gate drivers to cut off the inflow current.

18. The semiconductor circuit breaker according to claim 1, characterized in that When at least two of the first to third locations are each provided with one or more current sensors of the first current sensor and the second current sensor, In a state where the inflow current is cut off, the control unit monitors the residual current in each of the at least two locations based on the detection results of each of the at least two locations, and detects whether the semiconductor switch unit is abnormal based on the monitoring results.

19. The semiconductor circuit breaker according to claim 18, characterized in that If at least one of the residual currents in each of the at least two locations is equal to or greater than a reference residual current, the control unit detects that an abnormality has occurred in a semiconductor switch connected to the corresponding location.

20. The semiconductor circuit breaker according to claim 18, characterized in that If a difference between any two residual currents of the at least two portions is equal to or larger than a reference current difference, the control unit detects that an abnormality has occurred in a semiconductor switch provided between the corresponding portions.

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