Plasma processing device and assembling method thereof

Abstract

The plasma processing apparatus according to the present invention uses plasma to perform vacuum processing on an object to be processed disposed in a processing chamber, and comprises: a vacuum container having a protruding portion, the protruding part is a part formed by bending a wall forming the processing chamber in a convex shape from the atmosphere side to the processing chamber side, and an opening penetrating in the thickness direction is formed in the protruding part; an antenna which is provided outside the processing chamber, is provided in a recess formed by the wall surface of the protruding portion on the atmosphere side, and is connected to a high-frequency power supply to generate a high-frequency magnetic field; a dielectric plate disposed in the recess so as to close the opening of the protruding portion from the atmosphere side, the dielectric plate transmitting a high-frequency magnetic field generated by the antenna into the processing chamber; and a support member, which is an elastically deformable member attached to the recess, and which can be selectively disposed at a support position at which the dielectric plate is in contact with the dielectric plate and is urged by an elastic force toward a wall surface of the recess to support the dielectric plate, and a retracted position at which the dielectric plate is retracted from the recess. The retracted position is a position retracted from the support position.

Description

Technical Field

[0001] The present invention relates to a plasma processing device for processing a processed object using plasma and an assembly method thereof. Background Art

[0002] In the past, a plasma processing device has been proposed, in which a high-frequency current is flowed into an antenna, and an inductively coupled plasma (ICP for short) is generated by the inductive field generated thereby, and a substrate or the like is processed using the inductively coupled plasma. As such a plasma processing device, Patent Document 1 discloses that an antenna is arranged outside a vacuum container, and a high-frequency magnetic field generated by the antenna is transmitted into the vacuum container through a dielectric plate provided in a manner to block an opening formed in the wall of the vacuum container, thereby generating plasma in a processing chamber.

[0003] Furthermore, Patent Document 2 describes a plasma processing apparatus in which an antenna is arranged in a recessed portion on the atmosphere side formed by bending a wall of a vacuum container so as to protrude toward a processing chamber. In the plasma processing apparatus, by arranging the antenna in the recessed portion and providing a dielectric plate in the recessed portion, the plasma density in a direction orthogonal to the antenna can be increased, and the distribution of the plasma density generated in the processing chamber can be widened.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2020-198282

[0007] Patent Document 2: Japanese Patent Application Publication No. 2022-023394 Summary of the invention

[0008] Problems to be solved by the invention

[0009] However, in the structure in which the dielectric plate is arranged in the recess as described above, it is sometimes difficult to provide a space for installing a frame for fixing the dielectric plate to the vacuum container and supporting it. Therefore, the dielectric plate cannot be firmly supported during the assembly operation of the plasma processing device, and there is a possibility that the dielectric plate will shift or fall off.

[0010] The present invention is made in view of the above problems, and its main subject is to increase the density of plasma generated in the processing chamber and widen its distribution in a plasma processing device in which an antenna is arranged outside the processing chamber, and prevent the dielectric plate from shifting and falling off during assembly.

[0011] Technical means of solving problems

[0012] That is, the plasma processing apparatus of the present invention is an apparatus for vacuum processing a workpiece arranged in a processing chamber using plasma, and is characterized by comprising: a vacuum container having a protruding portion, wherein the protruding portion is formed by bending a wall forming the processing chamber in a convex shape from the atmosphere side toward the processing chamber side; an antenna provided outside the processing chamber and in a recess formed by the wall surface of the protruding portion on the atmosphere side, connected to a high-frequency power supply to generate a high-frequency magnetic field; a dielectric plate provided in a manner to block an opening formed in the protruding portion from the atmosphere side, so that the high-frequency magnetic field generated by the antenna is transmitted into the processing chamber; and a supporting member, which is an elastically deformable member installed in the recess and can be selectively arranged in a supporting position and a retreating position, wherein the supporting position is a position where the dielectric plate is supported by being urged toward the wall surface of the protruding portion by elastic force by entering between the antenna and the dielectric plate, and the retreating position is a position retreated from between the antenna and the dielectric plate.

[0013] Furthermore, in the assembly method of a plasma processing apparatus of the present invention, the plasma processing apparatus uses plasma to perform vacuum processing on a workpiece arranged in a processing chamber, and includes: a vacuum container having a protruding portion, wherein the protruding portion is formed by bending a wall forming the processing chamber in a convex shape from an atmospheric side toward the processing chamber side; an antenna provided outside the processing chamber and in a recess formed by a wall surface of the protruding portion on the atmospheric side, connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate provided in a manner to block an opening formed in the protruding portion from the atmospheric side so that the high-frequency magnetic field generated by the antenna is transmitted into the processing chamber, and the assembly method of the plasma processing apparatus is characterized in that: an elastically deformable support member is inserted between the antenna and the dielectric plate, the dielectric plate is supported by applying force toward the wall surface of the protruding portion by elastic force, and after the processing chamber is vacuum-exhausted, the support member is moved to retreat from between the antenna and the dielectric plate.

[0014] Effects of the Invention

[0015] According to the present invention, in a plasma processing apparatus in which an antenna is disposed outside a processing chamber, the density of plasma generated in the processing chamber can be increased and its distribution can be widened, and the displacement and fall-off of a dielectric plate during assembly can be prevented. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] [ Figure 1 ] is a schematic diagram showing the structure of the plasma processing device of this embodiment.

[0017] [ Figure 2 ] is a schematic diagram showing the peripheral structure of the antenna and magnetic field transmission window of the plasma processing device of this embodiment.

[0018] [ Figure 3 ] is a schematic representation Figure 2 A-A' line cross section.

[0019] [ Figure 4 ](a) is a diagram schematically showing the configuration of a support member at a support position of a plasma processing apparatus according to the present embodiment, and (b) is a diagram schematically showing the configuration of a support member at a retreat position of the plasma processing apparatus according to the present embodiment.

[0020] [ Figure 5 ] is a three-dimensional diagram schematically showing the structure of the supporting member of the present embodiment.

[0021] [ Figure 6 ] is a schematic diagram showing the structure of a plasma processing device according to another embodiment.

[0022] [ Figure 7 ] is a schematic diagram showing the peripheral structure of an antenna and a magnetic field transmission window of a plasma processing device according to another embodiment.

[0023] [ Figure 8 ] is a schematic representation Figure 7 Figure BB' line cross section.

[0024] [ Fig. 9 ](a) is a diagram schematically showing the configuration of a support member at a support position of a plasma processing apparatus according to another embodiment, and (b) is a diagram schematically showing the configuration of a support member at a retreat position of a plasma processing apparatus according to another embodiment.

[0025] [ Fig.10 ](a) is a diagram schematically showing the configuration of a support member at a support position of a plasma processing apparatus according to another embodiment, and (b) is a diagram schematically showing the configuration of a support member at a retreat position of a plasma processing apparatus according to another embodiment.

[0026] [ Fig.11 ](a) is a diagram schematically showing the configuration of a support member at a support position of a plasma processing apparatus according to another embodiment, and (b) is a diagram schematically showing the configuration of a support member at a retreat position of a plasma processing apparatus according to another embodiment.

[0027] [ Fig.12 ] is a three-dimensional diagram schematically showing the structure of a supporting member according to another embodiment.

[0028] [ Fig.13 ] is a three-dimensional diagram schematically showing the structure of a supporting member according to another embodiment.

[0029] [ Fig.14 ] is a three-dimensional diagram schematically showing the structure of a supporting member according to another embodiment.

[0030] [ Fig.15 ] is a three-dimensional diagram schematically showing the structure of a supporting member according to another embodiment. DETAILED DESCRIPTION

[0031] Hereinafter, a plasma processing apparatus 100 according to an embodiment of the present invention will be described with reference to the drawings.

[0032] <Device Structure>

[0033] The plasma processing apparatus 100 of the present embodiment performs vacuum processing on a substrate or other workpiece W using an inductively coupled plasma P. Here, the substrate is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence (EL) display, a flexible substrate for a flexible display, or the like. Moreover, the processing performed on the substrate is, for example, film formation, etching, ashing, sputtering, etc. performed by a plasma chemical vapor deposition (CVD) method.

[0034] In addition, the plasma processing device 100 of this embodiment is also called a plasma CVD device when film formation is performed using the plasma CVD method, is also called a plasma etching device when etching is performed, is also called a plasma ashing device when ashing is performed, and is also called a plasma sputtering device when sputtering is performed.

[0035] Specifically, if Figure 1 to Figure 3 As shown, the plasma processing apparatus 100 includes a vacuum container 2 in which a processing chamber 1 is formed inside and is evacuated and into which a gas G is introduced, an antenna 3 provided outside the processing chamber 1, and a high-frequency power supply 4 for applying a high frequency to the antenna 3. In the vacuum container 2, a magnetic field transmission window 5 is formed at a position adjacent to the antenna 3 so that a high-frequency magnetic field generated from the antenna 3 is transmitted into the processing chamber 1. When a high frequency is applied to the antenna 3 from the high-frequency power supply 4, an induction field is generated in the space inside the processing chamber 1 by the high-frequency magnetic field generated from the antenna 3 passing through the magnetic field transmission window 5, thereby generating an inductively coupled plasma P.

[0036] The vacuum container 2 includes a container body 21 forming the processing chamber 1 , and a window member 22 forming the magnetic field transmission window 5 .

[0037] The container body 21 is, for example, a metal container, and the wall (inner wall) thereof forms the processing chamber 1 on the inner side. An opening 2a is formed in the wall of the container body 21 and penetrates in the thickness direction. The window member 22 is detachably mounted on the container body 21 in a manner of blocking the opening 2a. In addition, the container body 21 is electrically grounded, and the window member 22 and the container body 21 are vacuum-sealed by a gasket such as an O-ring or an adhesive.

[0038] The window member 22 includes a metal plate (slit plate) 221 formed with a plurality of slits 221s and a dielectric plate 222. The metal plate 221 and the dielectric plate 222 are sequentially arranged from the processing chamber 1 side toward the atmosphere side (antenna side), and are both arranged in a manner extending along the length direction of the antenna 3. In the plasma processing apparatus 100 of the present embodiment, the slits 221s of the metal plate 221 and the dielectric plate 222 that seals the slits 221s form a magnetic field transmission window 5 that transmits a high-frequency magnetic field into the processing chamber 1.

[0039] The metal plate 221 is formed with a plurality of slits 221s penetrating in the plate thickness direction thereof, and is provided to block the opening 2a of the container body 21. The plurality of slits 221s are each formed in a rectangular shape extending in a direction intersecting the longitudinal direction of the antenna 3, and are arranged in the longitudinal direction of the antenna 3.

[0040] The metal plate 221 is, for example, a metal plate manufactured by rolling (e.g., cold rolling or hot rolling) a metal material selected from a group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W or Co or an alloy thereof (e.g., a stainless steel alloy, an aluminum alloy, etc.).

[0041] The dielectric plate 222 is disposed on the atmosphere side surface of the metal plate 221 via a gasket such as an O-ring so as to block the opening 2a of the container body 21 and the slit 221s of the metal plate 221 from the outside of the processing chamber 1 (ie, the atmosphere side).

[0042] The material constituting the dielectric plate 222 may be a known material such as ceramics such as alumina, silicon carbide, and silicon nitride, inorganic materials such as quartz glass and alkali-free glass, and resin materials such as fluorine resin (eg, Teflon).

[0043] The vacuum container 2 is configured to perform vacuum exhaust on the processing chamber 1 through the vacuum exhaust device 6. Moreover, the vacuum container 2 is configured to introduce gas G into the processing chamber 1, for example, via a flow regulator (not shown) and a plurality of gas inlet ports 212 provided on the container body 21. The gas G may be a gas corresponding to the processing content to be performed on the substrate W. For example, in the case of forming a film on the substrate by a plasma CVD method, the gas G is a raw material gas or a gas obtained by diluting it with a diluent gas (for example, H2). To give more specific examples, the films that can be formed on the substrate are as follows: a Si film is formed when the raw material gas is SiH4, a SiN film is formed when SiH4+NH3, a SiO2 film is formed when SiH4+O2, and a SiN:F film (fluorinated silicon nitride film) is formed when SiF4+N2.

[0044] Furthermore, a substrate holder 7 for holding the substrate W is provided in the vacuum container 2. As shown in the example, a bias voltage can be applied to the substrate holder 7 from the bias power supply 8. The bias voltage is, for example, a negative DC voltage, a negative bias voltage, etc., but is not limited thereto. By means of such a bias voltage, for example, the energy of positive ions in the plasma P when incident on the substrate W can be controlled, and the degree of crystallization of the film formed on the surface of the substrate W can be controlled. A heater 71 for heating the substrate W can also be provided in the substrate holder 7.

[0045] A plurality of antennas 3 are provided, and each antenna 3 is disposed outside the processing chamber 1 so as to face the magnetic field transmission window 5. Each antenna 3 is disposed so as to be substantially parallel to the surface of the substrate W provided in the processing chamber 1.

[0046] Each antenna 3 is an antenna of the same structure, and from the appearance, the length is a straight line of more than tens of cm, and the cross-sectional shape is circular. One end of the antenna 3 in the longitudinal direction is connected to the high-frequency power supply 4 via the matching circuit 41, and the other end is directly grounded. In addition, it can also be configured to set an impedance adjustment circuit such as a variable capacitor or a variable reactor at one end or the other end of the antenna 3 to adjust the impedance of each antenna 3. By adjusting the impedance of each antenna 3 in this way, the density distribution of the plasma P in the longitudinal direction of the antenna 3 can be uniformized, and the film thickness in the longitudinal direction of the antenna 3 can be uniformized.

[0047] The material of each antenna 3 is, for example, copper, aluminum, alloys thereof, stainless steel, etc., but is not limited thereto. In addition, the antenna 3 may be made hollow, and a cooling medium such as cooling water may flow therein to cool the antenna 3.

[0048] The high frequency power source 4 can flow a high frequency current IR into the antenna 3 via the matching circuit 41. The frequency of the high frequency is, for example, generally 13.56 MHz, but is not limited thereto and can be changed as appropriate.

[0049] Here, in the plasma processing apparatus 100 of this embodiment, the vacuum container 2 has a protrusion 2p formed by bending its wall in a convex shape from the atmosphere side toward the processing chamber 1 side. The protrusion 2p is formed near each antenna 3, and here, a plurality of protrusions 2p are formed corresponding to the plurality of antennas 3.

[0050] In the present embodiment, the protrusion 2p is formed by bending the wall of the container body 21 forming the processing chamber 1. The protrusion 2p is formed in a substantially U-shape protruding from the atmosphere side toward the processing chamber 1 side when viewed in the length direction of the antenna 3. The antenna 3 is arranged in the recess 2c formed by the wall surface on the atmosphere side of the protrusion 2p.

[0051] Each protrusion 2p includes a pair of side wall portions 2p1 facing each other with the antenna 3 sandwiched therebetween, and a bottom wall portion 2p2 connecting the lower ends of each side wall portion 2p1 (here, the end portion on the processing chamber 1 side). The pair of side wall portions 2p1 are formed in parallel with each other and in parallel with the direction from the antenna 3 toward the substrate W. The bottom wall portion 2p2 is formed in parallel along the surface of the substrate W. In addition, the opening portion 2a is formed in each of the pair of side wall portions 2p1 in a manner penetrating in the thickness direction. In each protrusion 2p, the opening portion 2a is formed at a position symmetrical to the antenna 3 at a position adjacent to the antenna 3.

[0052] In the recess 2c, the window members 22 are provided in plurality (here, two) in a manner of blocking each opening 2a. In the recess 2c, the plurality of window members 22 are arranged in a manner of facing each other (or back-to-back) with the antenna 3 sandwiched therebetween, and more specifically, the plurality of dielectric plates 222 are arranged in a manner of facing each other with the antenna 3 sandwiched therebetween. In the recess 2c, the metal plate 221 and the dielectric plate 222 constituting the window member are arranged standing up along the side wall portion 2p1 (i.e., in a direction intersecting the substrate W).

[0053] In addition, the plasma processing apparatus 100 of this embodiment further includes a support member 9 for preventing the dielectric plate 222 from being displaced or falling off during assembly. The support member 9 is an elastically deformable member detachably mounted on the recess 2c. Figure 4 As shown, by deformation, the support member 9 can be selectively arranged in a support position Q and a retreat position R, wherein the support position Q is a position where the dielectric plate 222 is supported by being urged toward the wall surface of the side wall portion 2p1 of the protruding portion 2p on the atmospheric side (i.e., the side wall surface of the recessed portion 2c) by elastic force in contact with the dielectric plate 222, and the retreat position R is a position retreated from the support position Q. The user can switch the position of the support member 9 between the support position Q and the retreat position R by grasping the support member 9 with fingers or the like to deform the support member 9 and inserting and removing the support member 9 in the vertical direction (the depth direction of the recessed portion 2c). In addition, the support member 9 includes an insulating resin material.

[0054] like Figure 2 , Figure 4 and Figure 5 As shown, specifically, the support member 9 is a roughly plate-shaped member that is bent in a convex shape from the processing chamber 1 side toward the atmosphere side, and is embedded and installed in the recess 2c in a manner that covers the antenna 3 and the dielectric plate 222. The support member 9 is a long strip-shaped member with a roughly fixed cross-sectional shape, and is installed in the recess 2c in a manner that its long axis direction is consistent with the length direction of the antenna 3. The cross-sectional shape of the support member 9 of this embodiment is an inverted U-shape that bulges from the processing chamber side toward the atmosphere side. More specifically, when viewed from the length direction of the antenna 3, the support member 9 has a top 91 that is bent and bulges toward the atmosphere side, and a pair of legs 92 that extend from both ends of the top 91 toward the processing chamber 1 side.

[0055] like Figure 4 As shown, at the supporting position Q, the supporting member 9 is inserted between the pair of window members 22 facing each other (specifically, between the pair of dielectric plates 222) in a state where it is deformed in such a way as to reduce the distance between the pair of legs 92. In this state, the pair of legs 92 are in surface contact with the surfaces of the corresponding dielectric plates 222, and the dielectric plates 222 are supported by applying force toward the side wall of the recess 2c by elastic force.

[0056] Moreover, in the retreat position R pulled upward from the supporting position Q, the supporting member 9 is not in contact with the dielectric plate 222 but in contact with the opposite side walls of the recess 2c through the pair of legs 92, and the pair of legs 92 are mounted on the recess 2c against the side walls.

[0057] In addition, the support member 9 also functions as a flow path forming member for forming a cooling flow path for the cooling fluid for cooling the antenna 3 and the window member 22. Specifically, the support member 9 forms a receiving space S that surrounds and receives the entire circumference of the antenna 3 and the window member 22 through its inner wall and the outer wall of the protruding portion 2p (i.e., the side wall and bottom wall of the recessed portion 2c) in the retreat position R. In addition, the receiving space S functions as a cooling flow path for the cooling fluid to flow during plasma processing. A vent 9a connecting the receiving space S and the external space is provided on the wall of the top 91 of the support member 9, and the cooling fluid can be introduced and exported from the vent 9a. Here, a plurality of (here, two) vents 9a are provided on the top 91 of the support member 9 along the length direction of the antenna 3, and the cooling fluid introduced from one of the vents 9a flows along the length direction of the antenna 3, cools the antenna 3 and the window member 22, and is then exported from the other vent 9a. Furthermore, the plasma processing apparatus 100 includes a cooling fluid supply mechanism (not shown), and the cooling fluid can be supplied from the vent 9 a by the cooling fluid supply mechanism.

[0058] <Effects of the present embodiment>

[0059] According to the plasma processing apparatus 100 of the present embodiment configured in this manner, since the antenna is arranged in the recess 2c formed by the wall surface on the atmosphere side of the protruding portion 2p, the distance around the antenna from the processing chamber can be shortened compared to, for example, the case where the antenna is arranged in a manner facing the flat wall of the vacuum container by providing an opening in the side wall of the recess 2c. As a result, the plasma density in the direction orthogonal to the antenna can be increased, and the distribution of the plasma density generated in the processing chamber can be widened. In addition, since the support member 9 that is elastically deformable and is mounted on the recess 2c and can be selectively arranged at the support position Q for supporting the dielectric plate by applying force to the wall surface of the recess 2c and the retreat position R for retreating from the position, when assembling the plasma processing apparatus that needs to support the dielectric plate, the dielectric plate can be prevented from being displaced or falling off by arranging the support member 9 at the support position Q. On the other hand, after the vacuum exhaust in the processing chamber that does not need to support the dielectric plate, the antenna can be brought close to the dielectric plate by arranging the support member 9 at the retreat position R, thereby increasing the plasma density in the processing chamber.

[0060] <Other Modified Embodiments>

[0061] In addition, the present invention is not limited to the above-described embodiments.

[0062] For example, in the plasma processing apparatus 100 of the embodiment, the protruding portion 2p is formed by bending the wall of the container body 21, but the present invention is not limited thereto. In another embodiment of the plasma processing apparatus 100, the processing chamber 1 is formed by the walls of the container body 21 and the window member 22, and the protruding portion 2p may be formed by bending the metal plate 221 of the window member 22. In this case, Figure 6 to Figure 8 As shown, the plasma processing apparatus 100 has an opening 2a formed on the upper wall 21a of the container body 21, which penetrates in the thickness direction, and a window member 22 including a metal plate 221 and a dielectric plate 222 is detachably mounted on the container body 21 in a manner of blocking the opening 2a. In addition, a plurality of protrusions 2p may be formed by bending the metal plate 221 in a convex shape from the atmosphere side toward the processing chamber 1 side at a position adjacent to each antenna 3. In addition, a plurality of slits 221s may be formed in a pair of side wall portions 2p1 of each protrusion 2p, which face each other with the antenna 3 sandwiched therebetween, and the dielectric plate 222 may be arranged in a manner of blocking the slits 221s. In addition, a support member 9 may be mounted on the recess 2c formed by bending the metal plate 221.

[0063] Furthermore, in the above-described embodiment, the top 91 of the support member 9 is curved and bulges toward the atmosphere, but the present invention is not limited thereto. Fig. 9As shown, the top 91 of the supporting member 9 may also be flat.

[0064] Furthermore, in the above-described embodiment, the pair of side wall portions 2p1 of the protruding portion 2p are formed in parallel with each other and in parallel with the direction from the antenna 3 toward the substrate W, but the present invention is not limited thereto. Fig.10 As shown, the pair of side wall portions 2p1 may include inclined portions 2p11 inclined so as to approach each other as moving from the antenna 3 side toward the processing chamber 1 side, and the opening 2a is formed in the inclined portions 2p11.

[0065] Furthermore, in the above-described embodiment, the slits 221s are formed in each of the pair of side wall portions 2p1, but the present invention is not limited thereto. Fig.11 As shown, the protrusion 2p may be formed by bending the metal plate 221, and the slit 221s may be continuously formed over the pair of side wall portions 2p1 and the bottom wall portion 2p2. In this case, the dielectric plate 222 may be formed in a substantially U-shaped manner protruding from the atmosphere side toward the processing chamber 1 side when viewed in the longitudinal direction of the antenna 3.

[0066] Furthermore, in another embodiment, only one vent 9a may be provided on the wall at the top 91 of the support member 9. In this case, the vent 9a may be as follows: Fig.12 As shown, it is arranged near the center of the top 91 along the length direction of the antenna 3, and can also be as shown in FIG. Fig.13 As shown, it is provided near the end of the top 91 along the length direction of the antenna 3. In the case where the vent 9a is provided near the center of the top 91, the cooling fluid introduced from the vent 9a can flow toward both ends along the length direction of the antenna 3 and be discharged from the openings at both ends of the support member 9. Moreover, in the case where the vent 9a is provided near the end of the top 91, the cooling fluid introduced from the vent 9a can flow toward the other end along the length direction of the antenna 3 and be discharged from the opening at the other end of the support member 9.

[0067] And in another embodiment, if Fig.14 and Fig.15 As shown, a plurality of (for example, two) supporting members 9 may be arranged side by side in each recess 2c along the length direction of the antenna 3. In this case, only one vent 9a may be provided at the top 91 of each supporting member 9, or a plurality of vents may be provided. Furthermore, the plurality of supporting members 9 may be arranged at intervals along the length direction of the antenna 3, or may be arranged without intervals.

[0068] In the above embodiment, the magnetic field transmission window 5 is formed by the slit 221s of the metal plate 221 and the dielectric plate 222 blocking it, but the present invention is not limited thereto. In another embodiment, the window member 22 may not include the metal plate 221, and the magnetic field transmission window 5 may be formed by the dielectric plate 222 alone.

[0069] The plasma processing apparatus 100 of the above-described embodiment includes a plurality of antennas 3 , but is not limited thereto and may include only one antenna 3 .

[0070] Furthermore, the disclosure of this specification may include the following exemplary aspects 1 to 6.

[0071] (Form 1) A plasma processing apparatus for vacuum processing a workpiece disposed in a processing chamber using plasma, the plasma processing apparatus comprising: a vacuum container having a protruding portion, the protruding portion being a portion formed by bending a wall forming the processing chamber in a convex shape from an atmospheric side toward the processing chamber side and having an opening penetrating in a thickness direction; an antenna disposed outside the processing chamber and disposed in a recess formed by a wall surface on the atmospheric side of the protruding portion, the antenna being connected to a high-frequency power source to generate a high-frequency magnetic field; a dielectric plate disposed in the recess so as to block the opening of the protruding portion from the atmospheric side, the high-frequency magnetic field generated by the antenna being transmitted into the processing chamber; and a supporting member being an elastically deformable member mounted in the recess and selectively configurable in a supporting position and a retreating position, the supporting position being a position in contact with the dielectric plate and supporting the dielectric plate by applying the dielectric plate toward the wall surface of the recess by elastic force, the retreating position being a position not in contact with the dielectric plate.

[0072] With this structure, since the antenna is arranged in the recess formed by the wall surface on the atmosphere side of the protruding portion, the distance around the antenna to the processing chamber can be shortened compared to, for example, the case where the antenna is arranged to face the flat wall of the vacuum container by providing an opening in the side wall of the recess. As a result, the plasma density in the direction orthogonal to the antenna can be increased, and the distribution of the plasma density generated in the processing chamber can be widened.

[0073] Furthermore, since the invention includes an elastically deformable support member installed in the recess and selectively arranged at a support position for supporting the dielectric plate by applying force toward the wall surface of the recess, and a retreat position for retreating from the position, when assembling a plasma processing device that requires support for the dielectric plate, the dielectric plate can be prevented from being displaced or falling off by arranging the support member at the support position. On the other hand, after the vacuum exhaust in the processing chamber that does not require support for the dielectric plate, the antenna can be brought close to the dielectric plate by arranging the support member at the retreat position, thereby further increasing the plasma density in the processing chamber.

[0074] (Form 2) According to the plasma processing device described in Form 1, wherein, when viewed from the length direction of the antenna, the plurality of dielectric plates are arranged relative to each other so as to sandwich the antenna, and the supporting member is inserted between a pair of opposing dielectric plates in a deformed state at the supporting position.

[0075] With such a structure, a plurality of dielectric plates facing each other can be supported simultaneously by one supporting member.

[0076] (Form 3) A plasma processing apparatus according to Form 1 or Form 2, wherein the support member is a generally plate-shaped member that is bent in a convex shape from the processing chamber side toward the atmosphere side, and is installed in the recess in a manner that covers the antenna and the dielectric plate.

[0077] With this structure, a space surrounding the antenna and the dielectric plate can be formed by using the wall of the support member and the wall of the recess, and the antenna and the dielectric plate can be efficiently cooled by supplying a cooling fluid to the space, for example.

[0078] (Form 4) A plasma processing device according to Form 3, wherein a receiving space surrounding and accommodating the antenna and the dielectric plate is formed by the wall of the supporting member in the retreat position and the wall of the protruding portion, and a vent connecting the receiving space with an external space is provided in the wall of the supporting member.

[0079] According to such a structure, by introducing the cooling fluid from the vent hole, the cooling fluid can be efficiently supplied to the housing space.

[0080] (Form 5) In the plasma processing apparatus according to Form 3 or Form 4, a plurality of the vents are provided on the wall of the support member along the longitudinal direction of the antenna.

[0081] With this structure, for example, by supplying cooling fluid from one of the vents and discharging the cooling fluid from the other vent, the cooling fluid can flow along the length direction of the antenna, thereby efficiently cooling the antenna and the dielectric plate.

[0082] (Form 6) In the plasma processing apparatus according to any one of Forms 3 to 5, a plurality of the support members are provided along the longitudinal direction of the antenna.

[0083] With such a structure, even if the plasma processing apparatus is large and has a very long antenna, it can be efficiently cooled.

[0084] (Form 7) A method for assembling a plasma processing apparatus, the plasma processing apparatus using plasma to perform vacuum processing on a workpiece arranged in a processing chamber, and comprising: a vacuum container having a protruding portion, the protruding portion being a portion formed by bending a wall forming the processing chamber in a convex shape from an atmospheric side toward the processing chamber side, and having an opening penetrating in a thickness direction; an antenna provided outside the processing chamber and provided in a recess formed by a wall surface of the protruding portion on the atmospheric side, the antenna being connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate provided in the recess in a manner to block the opening of the protruding portion from the atmospheric side, the high-frequency magnetic field generated by the antenna being transmitted into the processing chamber, wherein in the method for assembling the plasma processing apparatus, an elastically deformable support member is brought into contact with the dielectric plate, the dielectric plate is supported by being biased toward the wall surface of the recess by an elastic force, and then the processing chamber is evacuated and the support member is moved to a position where it is not in contact with the dielectric plate.

[0085] If this is the method for assembling such a plasma processing apparatus, the same effects as those of the above-mentioned plasma processing apparatus can be achieved.

[0086] In addition, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the present invention.

[0087] Industrial Applicability

[0088] According to the present invention, in a plasma processing apparatus in which an antenna is disposed outside a processing chamber, the density of plasma generated in the processing chamber can be increased and its distribution can be widened, and the displacement and fall-off of a dielectric plate during assembly can be prevented.

[0089] Description of Figure Numbers

[0090] 100: Plasma treatment device

[0091] 1: Processing room

[0092] 2: Vacuum container

[0093] 2a: Opening

[0094] 2p: Protruding part

[0095] 2c: Concave part

[0096] 222: Dielectric board

[0097] 3: Antenna

[0098] 4: High frequency power supply

[0099] 9: Supporting members

[0100] W: Object to be processed

[0101] P: Plasma

Claims

1. A plasma processing device, which uses plasma to vacuum process an object to be processed arranged in a processing chamber, the plasma processing device comprising: A vacuum container having a protruding portion, wherein the protruding portion is formed by bending a wall forming the processing chamber in a convex shape from an atmosphere side toward the processing chamber side, and is formed with an opening penetrating in a thickness direction; An antenna is provided outside the processing chamber and in a recess formed by the wall surface on the atmosphere side of the protruding portion, and is connected to a high-frequency power source to generate a high-frequency magnetic field; a dielectric plate disposed in the recessed portion in a manner to block the opening of the protruding portion from the atmosphere side, so that the high frequency magnetic field generated by the antenna is transmitted into the processing chamber; as well as The supporting member is an elastically deformable member installed in the recess and can be selectively arranged in a supporting position and a retreat position. The supporting position is a position where the dielectric plate is in contact with the dielectric plate and is supported by applying an elastic force to the dielectric plate toward the wall surface of the recess. The retreat position is a position retreated from the supporting position.

2. The plasma processing apparatus according to claim 1, wherein the support member is a substantially plate-shaped member that is bent in a convex shape from the processing chamber side toward the atmosphere side, and is mounted in the recessed portion so as to cover the antenna and the dielectric plate.

3. The plasma processing apparatus according to claim 2, wherein when viewed from the length direction of the antenna, The plurality of dielectric plates are arranged opposite to each other with the antenna sandwiched therebetween. The supporting member is inserted between the pair of opposing dielectric plates in a deformed state at the supporting position.

4. The plasma processing apparatus according to claim 2, wherein a housing space surrounding and housing the antenna and the dielectric plate is formed by the wall of the support member in the retreat position and the wall of the protruding portion, A vent hole connecting the accommodation space and the external space is provided on the wall of the supporting member. 5 . The plasma processing apparatus according to claim 4 , wherein a plurality of the vents are provided on the wall of the support member along the length direction of the antenna. 6 . The plasma processing apparatus according to claim 4 , wherein a plurality of the support members are provided along a length direction of the antenna.

7. A method for assembling a plasma processing device, wherein the plasma processing device uses plasma to perform vacuum processing on a processing object arranged in a processing chamber, and comprises: A vacuum container having a protruding portion, wherein the protruding portion is formed by bending a wall forming the processing chamber in a convex shape from an atmosphere side toward the processing chamber side, and is formed with an opening penetrating in a thickness direction; An antenna is provided outside the processing chamber and in a recess formed by the wall surface of the protruding portion on the atmosphere side, and is connected to a high-frequency power supply to generate a high-frequency magnetic field; and a dielectric plate is arranged in the recess in a manner to block the opening of the protruding portion from the atmosphere side, so that the high-frequency magnetic field generated by the antenna is transmitted into the processing chamber. In the assembly method of the plasma processing device, The elastically deformable supporting member is brought into contact with the dielectric plate, and the dielectric plate is urged toward the wall surface of the recess by elastic force to support the dielectric plate. After the processing chamber is evacuated, the supporting member is moved to a position where it does not contact the dielectric plate.

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