Silicon-containing photoacid generator, preparation method of silicon-containing photoacid generator, thick film photoresist, photoresist layer and preparation method of photoresist layer

Abstract

The invention provides a silicon-containing photoacid generator, a preparation method of the silicon-containing photoacid generator, a thick film photoresist, a photoresist layer and a preparation method of the photoresist layer, and relates to the technical field of photoresists. The silicon-containing photoacid generator provided by the invention is added into the thick-film photoresist, the thick-film photoresist comprises the following components in parts by mass: 30-90 parts of phenolic resin, 5-30 parts of a photosensitizer, 5-40 parts of the silicon-containing photoacid generator, 60-180 parts of a solvent and 1-5 parts of a flatting agent, and the silicon-containing photoacid generator is prepared by adjusting the proportion of the silicon-containing photoacid generator. Not only can the adhesiveness and the side wall perpendicularity of the photoresist be improved, but also the purposes of improving the resolution ratio and the heat resistance of the photoresist can be achieved. The silicon-containing photoacid generator provided by the invention is simple in preparation method and high in synthesis efficiency.

Description

Technical Field

[0001] The present application relates to the technical field of photoresists, and in particular to a silicon-containing photoacid generator and a preparation method thereof, a thick-film photoresist, a photoresist layer and a preparation method thereof. Background Art

[0002] Thick film photoresist has excellent performance in lithography, especially in i-line (365nm), and has a wide range of practical application value, meeting the production needs of large-scale integrated circuits. However, there are still some problems that have not been well solved, such as poor adhesion between photoresist and substrate, insufficient verticality of side walls, heat resistance and low resolution. Summary of the invention

[0003] The purpose of the present application is to provide a silicon-containing photoacid generator and a preparation method thereof, a thick-film photoresist, a photoresist layer and a preparation method thereof, aiming to solve the problems of poor adhesion between the existing thick-film photoresist and the substrate, insufficient side wall verticality, heat resistance and low resolution.

[0004] To achieve the above objectives, the present application provides a silicon-containing photoacid generator, the chemical structure of which is shown in Formula I:

[0005]

[0006] In formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or a benzene ring.

[0007] The present application also provides a method for preparing the above-mentioned silicon-containing photoacid generator, comprising:

[0008] Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution;

[0009] Adding 3-aminopropyltriethoxysilane to the mixed solution for a first reaction to obtain an intermediate product;

[0010] Adding diazonaphthoquinonesulfonyl chloride to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator.

[0011] The present application also provides a silicon-containing photoacid generator, the chemical structure of which is shown in Formula II:

[0012]

[0013] The present application also provides a method for preparing the above-mentioned silicon-containing photoacid generator, comprising:

[0014] Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution;

[0015] Adding N-2-(aminoethyl)-3-aminopropyltrimethoxysilane to the mixed solution for a first reaction to obtain an intermediate product;

[0016] Adding diazonaphthoquinonesulfonyl chloride to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator.

[0017] The present application also provides a thick film photoresist, which includes, by mass, 30 to 90 parts of phenolic resin, 5 to 30 parts of photosensitizer, 5 to 40 parts of the above-mentioned silicon-containing photoacid generator, 60 to 180 parts of solvent and 1 to 5 parts of leveling agent.

[0018] In some embodiments, the photosensitizer is a diazonaphthoquinone photosensitizing compound.

[0019] In some embodiments, the solvent includes at least one of propylene glycol methyl ether acetate, dimethylacetamide, xylene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, γ-butyrolactone and N-methylpyrrolidone.

[0020] In some embodiments, the leveling agent includes at least one of MEGAFACE, F-563, polymethylphenylsiloxane, and polydimethylsiloxane.

[0021] The present application also provides a photoresist layer formed by curing the above-mentioned thick film photoresist.

[0022] The present application also provides a method for preparing the photoresist layer as described above, comprising: mixing the raw material components of the thick film photoresist to prepare a glue solution; and performing coating, baking, exposure and development on the glue solution on a substrate to obtain the photoresist layer.

[0023] Compared with the prior art, the beneficial effects of this application include:

[0024] The silicon-containing photoacid generator provided in the present application is added to a thick film photoresist. One end of the silicon-containing photoacid generator contains siloxane and can react with substrate silicon, and the other end contains a benzene ring and has an intermolecular force with the resin, thereby increasing the adhesion and connecting the resin and the substrate together; the silicon-containing photoacid generator has a high degree of esterification, which increases the dissolution inhibition and increases the ratio of the non-exposed area to the exposed area, thereby improving the resolution and the verticality of the side wall; because the silicon-containing photoacid generator has multiple benzene rings, the heat resistance is increased. By adjusting the proportion of the silicon-containing photoacid generator, not only the adhesion and side wall verticality of the photoresist can be increased, but also the resolution and heat resistance of the photoresist can be improved.

[0025] The preparation method of the silicon-containing photoacid generator provided in the present application is simple and has high synthesis efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope of the present application.

[0027] Figure 1 The adhesion between the photoresist and the substrate of Example 1;

[0028] Figure 2 The adhesion between the photoresist and the substrate of Example 2;

[0029] Figure 3 The adhesion between the photoresist and the substrate of Example 3;

[0030] Figure 4 The adhesion between the photoresist and the substrate in Comparative Example 1;

[0031] Figure 5 The adhesion between the photoresist and the substrate in Comparative Example 2;

[0032] Figure 6 This is the adhesion between the photoresist and the substrate in Comparative Example 3. DETAILED DESCRIPTION

[0033] As used herein:

[0034] "Prepared from" is synonymous with "comprising." As used herein, the terms "comprising," "including," "having," "containing," or any other variation thereof, are intended to cover a non-exclusive inclusion. For example, a composition, process, method, article, or apparatus that comprises the listed elements is not necessarily limited to only those elements but may include other elements not expressly listed or inherent to such composition, process, method, article, or apparatus.

[0035] The conjunction "consisting of excludes any unspecified element, step, or component. If used in a claim, this phrase renders the claim closed-ended so that it does not include materials other than those described, except for conventional impurities associated therewith. When the phrase "consisting of" appears in a clause of the body of a claim rather than immediately following the subject matter, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

[0036] When an amount, concentration, or other value or parameter is expressed as a range, a preferred range, or a range defined by a series of upper preferred values ​​and lower preferred values, this should be understood as specifically disclosing all ranges formed by any pairing of any range upper limit or preferred value with any range lower limit or preferred value, regardless of whether the range is disclosed separately. For example, when a range of "1 to 5" is disclosed, the described range should be interpreted as including ranges "1 to 4", "1 to 3", "1 to 2", "1 to 2 and 4 to 5", "1 to 3 and 5", etc. When a numerical range is described in this article, unless otherwise stated, the range is intended to include its end values ​​and all integers and fractions within the range.

[0037] In these examples, parts and percentages are by mass unless otherwise indicated.

[0038] "Parts by mass" refers to the basic unit of measurement for expressing the mass ratio of multiple components. 1 part can represent any unit mass, such as 1g or 2.689g. If we say that the mass of component A is a parts and the mass of component B is b parts, it means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK and the mass of component B is bK (K is an arbitrary number, indicating a multiple factor). It should not be misunderstood that, unlike the mass parts, the sum of the mass of all components is not limited to 100 parts.

[0039] "And / or" is used to indicate that one or both of the stated situations may occur, for example, A and / or B includes (A and B) and (A or B).

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0041] The present application provides a silicon-containing photoacid generator, the chemical structure of which is shown in Formula I:

[0042]

[0043] In formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or a benzene ring.

[0044] The present application also provides a method for preparing the above-mentioned silicon-containing photoacid generator, comprising:

[0045] Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution, and cooling the mixed solution to 0-5°C;

[0046] Adding 3-aminopropyltriethoxysilane to the mixed solution for a first reaction to obtain an intermediate product, wherein the first reaction time may be, for example, 0.5 to 5 hours;

[0047] Diazide naphthoquinone sulfonyl chloride is added to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator. The second reaction time may be, for example, 1 to 5 hours.

[0048] The chemical reaction process of the preparation method of the silicon-containing photoacid generator of this embodiment is as follows:

[0049]

[0050] Among them, Et3N represents triethylamine and ACE represents acetone.

[0051] The present application also provides a silicon-containing photoacid generator, the chemical structure of which is shown in Formula II:

[0052]

[0053] The present application also provides a method for preparing the above-mentioned silicon-containing photoacid generator, comprising:

[0054] Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution, and cooling the mixed solution to 0-5°C;

[0055] Adding N-2-(aminoethyl)-3-aminopropyltrimethoxysilane to the mixed solution for a first reaction to obtain an intermediate product, wherein the first reaction time may be, for example, 0.5 to 5 hours;

[0056] Diazide naphthoquinone sulfonyl chloride is added to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator. The second reaction time may be, for example, 1 to 5 hours.

[0057] The chemical reaction process of the preparation method of the silicon-containing photoacid generator of this embodiment is as follows:

[0058]

[0059] Among them, Et3N represents triethylamine and ACE represents acetone.

[0060] The present application also provides a thick film photoresist, which includes, by mass, 30 to 90 parts of phenolic resin, 5 to 30 parts of photosensitizer, 5 to 40 parts of the above-mentioned silicon-containing photoacid generator, 60 to 180 parts of solvent and 1 to 5 parts of leveling agent.

[0061] The phenolic resin may be, for example, 30 parts, 40 parts, 50 parts, 60 parts, 70 parts, 80 parts, 90 parts or any value between 30 and 90 parts; the photosensitizer may be, for example, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts or any value between 5 and 30 parts; the silicon-containing photoacid generator may be, for example, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, 35 parts, 40 parts or any value between 5 and 40 parts; the solvent may be, for example, 60 parts, 70 parts, 80 parts, 90 parts, 100 parts, 110 parts, 120 parts, 130 parts, 140 parts, 150 parts, 160 parts, 170 parts, 180 parts or any value between 60 and 180 parts; the leveling agent may be, for example, 1 part, 2 parts, 3 parts, 4 parts, 5 parts or any value between 1 and 5 parts.

[0062] In some embodiments, the photosensitizer is a diazonaphthoquinone photosensitizing compound.

[0063] In some embodiments, the solvent includes at least one of propylene glycol methyl ether acetate, dimethylacetamide, xylene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, γ-butyrolactone and N-methylpyrrolidone.

[0064] In some embodiments, the leveling agent includes at least one of MEGAFACE, F-563, polymethylphenylsiloxane, and polydimethylsiloxane.

[0065] The present application also provides a photoresist layer formed by curing the above-mentioned thick film photoresist.

[0066] The present application also provides a method for preparing the photoresist layer as described above, comprising: mixing the raw material components of the thick film photoresist to prepare a glue solution; and performing coating, baking, exposure and development on the glue solution on a substrate to obtain the photoresist layer.

[0067] In some embodiments, the method for preparing the photoresist layer includes: on a silicon wafer substrate, pre-spin coating speed of 200-1000 rpm, coating at a main speed of 1000-3000 rpm, baking temperature of 90-125°C, I-line proximity exposure machine, exposure dose of 60-200 mj / cm 2 , Gap10~15um, 2.38% TMAH as developer, developing time 60~100s.

[0068] The embodiments of the present application will be described in detail below in conjunction with specific examples, but it will be appreciated by those skilled in the art that the following examples are only used to illustrate the present application and should not be considered as limiting the scope of the present application. If specific conditions are not specified in the examples, they are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer is not specified in the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0069] Example 1

[0070] This embodiment first provides a silicon-containing photoacid generator, and the preparation method thereof comprises the following steps:

[0071] In a three-necked flask with a thermometer and mechanical stirring, 10.00 g (25.90 mmol, 1.0 eq) of the raw material 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol, 60 mL of acetone, and 15.72 g (103.60 mmol, 6.0 eq) of triethylamine were added. The temperature was lowered to 0°C while stirring. At the same time, 6.4 mL (6.02 g, 27.20 mmol, 1.05 eq) of 3-aminopropyltriethoxysilane was added dropwise using a constant pressure dropping funnel. After the addition was completed, the reaction was allowed to proceed for 1 hour. 35.40 g (132.9 mmol, 5.1 eq) of diazonaphthoquinonesulfonyl chloride was added. The stirring was continued for 2 h. The reaction progress was controlled by liquid chromatography. After the reaction, 250 mL of n-heptane was added and stirred for 10 min, then filtered, the filter cake was washed with n-heptane, dried and weighed, and 30.94 g of a crude silicon-containing photoacid generator of Example 1 was obtained with a yield of 69%. The structural formula thereof is shown below:

[0072]

[0073] Its NMR spectrum data is shown below:

[0074] 1 H NMR (Chloroform-d, 500MHz): δ (ppm) 8.15-8.08 (m, 5H), 7.81-

[0075] 7.72(m,5H),7.64(d,J=7.1Hz,2H),7.11(dt,J=8.4,1.1Hz,1H),7.05(p,

[0076] J=0.9Hz,1H),6.78(dd,J=8.4,2.3Hz,1H),6.64(d,J=2.2Hz,1H),4.00(t,

[0077] J=0.9Hz,2H),3.88(dt,J=5.6,1.1Hz,1H),3.79(q,J=7.5Hz,3H),3.72(tt,

[0078] J=5.5,4.6Hz,0H),2.73(td,J=6.5,4.6Hz,1H),1.69-1.59(m,1H),1.22(t,J=7.4Hz,4H),0.71(t,J=9.1Hz,1H);

[0079] 13 C NMR(Common NMR Solvents, 125MHz): δ (ppm) 178.25, 177.69, 149.42, 148.58, 147.26, 138.23, 133.14, 132.19, 131.51, 131.24, 131.04, 131.02, 130.58, 13 0.02,129.92,129.49,129.20,128.59,128.51,128.04,125.74,122. 51,116.82,114.52,58.42,53.83,50.90,30.37,23.27,18.28,10.48.

[0080] This embodiment also provides a thick film photoresist, which includes, by weight, 80 parts of phenolic resin, 10 parts of photosensitizer, 7 parts of silicon-containing photoacid generator of embodiment 1, 160 parts of solvent and 3 parts of leveling agent. The phenolic resin is PR-55605 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazide naphthoquinone-5-sulfonate, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563.

[0081] This embodiment also provides a method for preparing a photoresist layer, comprising the following steps:

[0082] The raw material components of thick film photoresist were mixed, shaken on a shaker for 48 hours, and filtered through a 3um filter membrane for 3 times to prepare a glue solution; the substrate was a 4-inch silicon wafer, the pre-spin coating speed was 1000rpm, the main speed was 1800rpm, the baking temperature was 110℃, the I-line proximity exposure machine was used, and the exposure dose was 90mj / cm 2 , Gap10um, 2.38% TMAH as developer, 75s as developing time. Test the resolution, morphology, heat resistance and adhesion of the pattern to the substrate surface after exposure and development; observe whether the morphology of the sample changes under an optical microscope (OM).

[0083] Example 2

[0084] The difference between Example 2 and Example 1 is that the thick film photoresist of Example 2 includes, by mass, 72 parts of phenolic resin, 8 parts of photosensitizer, 17 parts of silicon-containing photoacid generator of Example 1, 160 parts of solvent and 3 parts of leveling agent, wherein the phenolic resin is PR-55924 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazide naphthoquinone-5-sulfonate, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563. The remaining steps are the same as those of Example 1.

[0085] Example 3

[0086] This embodiment first provides a silicon-containing photoacid generator, and the preparation method thereof comprises the following steps:

[0087] In a three-necked flask with a thermometer and mechanical stirring, 10.00 g (25.90 mmol, 1.0 eq) of the raw material 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol, 60 mL of acetone, and 15.72 g (103.60 mmol, 6.0 eq) of triethylamine were added. The temperature was lowered to 0°C under stirring. At the same time, 6.4 mL (6.02 g, 27.20 mmol, 1.05 eq) of N-2-(aminoethyl)-3-aminopropyltrimethoxysilane was added dropwise using a constant pressure dropping funnel. After the addition was completed, the reaction was allowed to react for 1 hour. 35.40 g (132.9 mmol, 5.1 eq) of naphthoquinone diazonium sulfonyl chloride was added. The stirring was continued for 2 h. The reaction progress was controlled by liquid chromatography. After the reaction, 250 mL of n-heptane was added and stirred for 10 min, then filtered, the filter cake was washed with n-heptane, dried and weighed, and 28.76 g of a crude silicon-containing photoacid generator of Example 3 was obtained with a yield of 64%. The structural formula is shown below:

[0088]

[0089] Its NMR spectrum data is shown below:

[0090] 1H NMR (Chloroform-d, 500MHz): δ (ppm) 8.15-8.08 (m, 5H), 7.81-7.72 (m, 5H), 7.64 (d, J = 7.1Hz, 3H), 7.1 1(dt,J=8.4,1.1Hz,1H),7.04(q,J=1.0Hz,1H),6.78(dd,J=8.4,2.3Hz,1H),6.64(d,J=2.2Hz,1H),4. 00(t,J=0.9Hz,2H),3.87(dt,J=5.3,1.1Hz,1H),3.79(q,J=7.5Hz,3H),2.98(tt,J=5.1,4.2Hz,1H),2 .78-2.71(m,2H),2.68-2.56(m,2H),1.67-1.57(m,1H),1.22(t,J=7.4Hz,5H),0.71(t,J=9.1Hz,1H);

[0091] 13 C NMR(Common NMR Solvents, 125MHz): δ (ppm) 178.25, 177.69, 149.42, 148.58, 147.26, 138.23, 133.17, 132.19, 131.51, 131.24, 131.04, 131.02, 130.58, 130.02, 1 29.92,129.49,129.20,128.59,128.51,128.04,125.74,122.51,116.82 ,114.52,58.42,53.47,51.28,49.06,48.34,30.37,23.31,18.28,10.48.

[0092] This embodiment also provides a thick film photoresist, which includes, by mass, 70 parts of phenolic resin, 12 parts of photosensitizer, 15 parts of silicon-containing photoacid generator of embodiment 3, 160 parts of solvent and 3 parts of leveling agent. The phenolic resin is PR-55873 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazide naphthoquinone-5-sulfonate, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563.

[0093] This embodiment also provides a method for preparing a photoresist layer, comprising the following steps:

[0094] The raw material components of thick film photoresist were mixed, shaken on a shaker for 48 hours, and filtered through a 3um filter membrane for 3 times to prepare a glue solution; the substrate was a 4-inch silicon wafer, the pre-spin coating speed was 1000rpm, the main speed was 1800rpm, the baking temperature was 110℃, the I-line proximity exposure machine was used, and the exposure dose was 90mj / cm 2 , Gap10um, 2.38% TMAH as developer, 75s as developing time. Test the resolution, morphology, heat resistance and adhesion of the pattern to the substrate surface after exposure and development; observe whether the morphology of the sample changes under an optical microscope (OM).

[0095] Comparative Example 1

[0096] The difference between Comparative Example 1 and Example 1 is that the thick film photoresist of Comparative Example 1 includes, by mass, 80 parts of phenolic resin, 17 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as those of Example 1.

[0097] Comparative Example 2

[0098] The difference between Comparative Example 2 and Example 2 is that the thick film photoresist of Comparative Example 2 includes, by mass, 72 parts of phenolic resin, 25 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as Example 2.

[0099] Comparative Example 3

[0100] The difference between Comparative Example 3 and Example 3 is that the thick film photoresist of Comparative Example 3 includes, by mass, 70 parts of phenolic resin, 27 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as Example 3.

[0101] The adhesion between the photoresist and the substrate of Examples 1-3 and Comparative Examples 1-3 is as follows: Figures 1 to 6 The performance of the photoresist layer of each embodiment and comparative example is shown in Table 1.

[0102] Resolution, heat resistance, sidewall verticality, adhesion performance test methods: 1000rpm pre-spin coating speed, 1800rpm main speed, coating, baking temperature 110℃, I-line proximity exposure machine, exposure dose 90mj / cm 2 , Gap10um, 2.38% TMAH as developer, 75s as developing time, and observe under OM.

[0103] Anti-etching performance test method: Soak the exposed and developed film in different concentrations of acid, such as sulfuric acid or hydrochloric acid solution, for 2 minutes, and observe its appearance changes and surface damage.

[0104] Table 1 Performance comparison of the photoresist layer of each embodiment and comparative example

[0105]

[0106] It can be seen from the test data in Table 1 that after adding the silicon-containing photoacid generator to Examples 1 to 3, the adhesion is improved compared with Comparative Examples 1 to 3, and the heat resistance and resolution are significantly improved. Therefore, the addition of the silicon-containing photoacid generator can improve the adhesion, resolution, side wall verticality and heat resistance of the photoresist and the substrate to a certain extent, and prevent the purpose of debonding. This is because the silicon-containing photoacid generator contains siloxane at one end, which can react with the silicon of the substrate, and contains a benzene ring at the other end, and there is an intermolecular force between the resin, thereby achieving the effect of increasing adhesion and connecting the resin and the substrate; and the silicon-containing photoacid generator has a high degree of esterification, which increases the dissolution inhibition, increases the ratio of the non-exposed area to the exposed area, and thus improves the resolution and side wall verticality; in addition, because the silicon-containing photoacid generator has multiple benzene rings, the heat resistance is increased.

[0107] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

[0108] In addition, those skilled in the art will appreciate that, although some embodiments herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the above claims, any one of the claimed embodiments may be used in any combination. The information disclosed in this background technology section is intended only to deepen the understanding of the overall background technology of the present application and should not be regarded as an admission or in any form of implication that the information constitutes prior art known to those skilled in the art.

Claims

1. A silicon-containing photoacid generator, characterized in that: Its chemical structure is shown in Formula I: In formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or a benzene ring.

2. A method for preparing the silicon-containing photoacid generator according to claim 1, characterized in that: include: Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution; Adding 3-aminopropyltriethoxysilane to the mixed solution for a first reaction to obtain an intermediate product; Adding diazonaphthoquinonesulfonyl chloride to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator.

3. A silicon-containing photoacid generator, characterized in that: Its chemical structure is shown in Formula II:

4. A method for preparing the silicon-containing photoacid generator according to claim 3, characterized in that: include: Mixing 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol with acetone and triethylamine to obtain a mixed solution; Adding N-2-(aminoethyl)-3-aminopropyltrimethoxysilane to the mixed solution for a first reaction to obtain an intermediate product; Adding diazonaphthoquinonesulfonyl chloride to the intermediate product for a second reaction to obtain the silicon-containing photoacid generator.

5. A thick film photoresist, characterized in that: The invention comprises, by weight, 30 to 90 parts of phenolic resin, 5 to 30 parts of photosensitizer, 5 to 40 parts of silicon-containing photoacid generator according to claim 1 or 2, 60 to 180 parts of solvent and 1 to 5 parts of leveling agent.

6. The thick film photoresist according to claim 5, characterized in that The photosensitizer is a diazonaphthoquinone photosensitizing compound.

7. The thick film photoresist according to claim 5, characterized in that The solvent includes at least one of propylene glycol methyl ether acetate, dimethylacetamide, xylene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, γ-butyrolactone and N-methylpyrrolidone.

8. The thick film photoresist according to claim 5, characterized in that The leveling agent includes at least one of MEGAFACE, F-563, polymethylphenylsiloxane, and polydimethylsiloxane.

9. A photoresist layer, characterized in that: The thick film photoresist is cured by any one of claims 5 to 8.

10. A method for preparing a photoresist layer as claimed in claim 9, characterized in that: include: Mixing raw material components of the thick film photoresist to prepare a glue solution; The glue solution is spread on the substrate, baked, exposed and developed to obtain the photoresist layer.

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