Silicon-containing photoacid generators, methods of making the same, thick film photoresists, photoresist layers, and methods of making the same

Abstract

The application provides a silicon-containing photo-acid generator, a preparation method of the silicon-containing photo-acid generator, a thick film photoresist, a photoresist layer and a preparation method of the photoresist layer, and relates to the technical field of photoresists. The silicon-containing photo-acid generator is added in the thick film photoresist, the thick film photoresist comprises 30-90 parts of phenolic resin, 5-30 parts of a photosensitizer, 5-40 parts of the silicon-containing photo-acid generator, 60-180 parts of a solvent and 1-5 parts of a leveling agent in terms of mass fraction. By adjusting the proportion of the silicon-containing photo-acid generator, the adhesion and the sidewall perpendicularity of the photoresist can be increased, and the resolution and the heat resistance of the photoresist can be improved. The preparation method of the silicon-containing photo-acid generator is simple and has high synthesis efficiency.

Description

TECHNICAL FIELD

[0001] The present application relates to the photoresist technical field, especially relates to a silicon-containing photoacid generator and a preparation method thereof, a thick film photoresist, a photoresist layer and a preparation method thereof. BACKGROUND

[0002] The thick film photoresist performs very excellent on the photoetching performance, especially has wide practical application value on i-line (365nm), and meets the production demand of large-scale integrated circuit, but some problems have not been well solved at present, such as poor adhesion of the photoresist and the substrate, insufficient verticality of the side wall, low heat resistance and resolution and the like. SUMMARY

[0003] The present application aims to provide a silicon-containing photoacid generator and a preparation method thereof, a thick film photoresist, a photoresist layer and a preparation method thereof, and aims to solve the problems of poor adhesion of the existing thick film photoresist and the substrate, insufficient verticality of the side wall, low heat resistance and resolution and the like.

[0004] To achieve the above object, the present application provides a silicon-containing photoacid generator, and a chemical structural formula thereof is shown as formula I:

[0005]

[0006] In formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or a benzene ring.

[0007] The present application further provides a preparation method of the above-mentioned silicon-containing photoacid generator, comprising:

[0008] 2,6-bis (2,4-dihydroxybenzyl) -4-benzyl chlorophenol is mixed with acetone and triethylamine to obtain a mixed solution;

[0009] 3-aminopropyl triethoxysilane is added into the mixed solution to perform a first reaction, and an intermediate product is obtained;

[0010] Diazonaphthoquinone sulfonyl chloride is added into the intermediate product to perform a second reaction, and the silicon-containing photoacid generator is obtained.

[0011] The present application further provides a silicon-containing photoacid generator, and a chemical structural formula thereof is shown as formula II:

[0012]

[0013] The present application further provides a preparation method of the above-mentioned silicon-containing photoacid generator, comprising:

[0014] 2,6-bis (2,4-dihydroxybenzyl) -4-benzyl chlorophenol is mixed with acetone and triethylamine to obtain a mixed solution;

[0015] adding N-2-(aminoethyl)-3-aminopropyl trimethoxysilane to the mixed solution to perform a first reaction to obtain an intermediate product;

[0016] adding diazonium naphthoquinone sulfonyl chloride to the intermediate product to perform a second reaction to obtain the silicon-containing photo-acid generator.

[0017] The application further provides a thick film photoresist, comprising, in mass fractions, 30-90 parts of phenolic resin, 5-30 parts of photosensitizer, 5-40 parts of the silicon-containing photo-acid generator, 60-180 parts of solvent and 1-5 parts of leveling agent.

[0018] In some embodiments, the photosensitizer is a diazonium naphthoquinone photosensitive compound.

[0019] In some embodiments, the solvent comprises at least one of propylene glycol methyl ether acetate, dimethylacetamide, dimethylbenzene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, gamma-butyrolactone and N-methyl pyrrolidone.

[0020] In some embodiments, the leveling agent comprises at least one of MEGAFACE, F-563, polymethylphenylsiloxane and polydimethylsiloxane.

[0021] The application further provides a photoresist layer formed by curing the thick film photoresist.

[0022] The application further provides a preparation method of the photoresist layer, comprising: mixing raw components of the thick film photoresist to prepare a glue solution; performing glue spreading, baking, exposure and development on the glue solution on a substrate to obtain the photoresist layer.

[0023] Compared with the prior art, the application has the following beneficial effects:

[0024] The silicon-containing photo-acid generator is added in the thick film photoresist, the silicon-containing photo-acid generator contains siloxane at one end, which can interact with silicon on the substrate, and contains benzene ring at the other end, which can interact with resin, so that the adhesion of the photoresist is increased, the contact between the resin and the substrate is improved, the resolution and the verticality of the sidewall are improved, the heat resistance is increased due to the multiple benzene rings in the silicon-containing photo-acid generator, and the resolution and the heat resistance of the photoresist can be improved by adjusting the proportion of the silicon-containing photo-acid generator.

[0025] The preparation method of the silicon-containing photo-acid generator is simple and has high synthesis efficiency. Attached Figure Description

[0026] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation on the scope of this application.

[0027] Figure 1 This illustrates the adhesion between the photoresist and the substrate in Example 1.

[0028] Figure 2 This illustrates the adhesion between the photoresist and the substrate in Example 2.

[0029] Figure 3 This illustrates the adhesion between the photoresist and the substrate in Example 3.

[0030] Figure 4 This is a comparison of the adhesion between the photoresist and the substrate in Example 1.

[0031] Figure 5 This is a comparison of the adhesion between the photoresist and the substrate in Example 2.

[0032] Figure 6 This is a comparison of the adhesion between the photoresist and the substrate in Example 3. Detailed Implementation

[0033] As used in this article:

[0034] "Prepared from" is synonymous with "comprising". The terms "comprising", "including", "having", "containing", or any other variations thereof as used herein are intended to cover non-exclusive inclusion. For example, a composition, step, method, article, or apparatus that includes the listed elements is not necessarily limited to those elements, but may include other elements not expressly listed or elements inherent to such composition, step, method, article, or apparatus.

[0035] The conjunction "composed of..." excludes any unspecified elements, steps, or components. If used in a claim, this phrase makes the claim closed, excluding materials other than those described, except for associated conventional impurities. When the phrase "composed of..." appears in a clause of the body of a claim rather than immediately following it, it limits only the elements described in that clause; other elements are not excluded from the claim as a whole.

[0036] When expressing amounts, concentrations, or other values or parameters of a range, preferably a range, or a series of upper preferred values and lower preferred values, it is to be understood that the disclosure specifically envisions all ranges formed from any of the upper values or preferred values with any of the lower values or preferred values, even if that range is not expressly disclosed. For example, where a range "1-5" is disclosed, then all ranges having an upper limit of 5 and a lower limit of 1, e.g., "1-4," "1-3," "1-2," "1-2 and 4-5," "1-3 and 5," etc. are to be explicitly included. When numerical ranges are disclosed, unless expressly stated otherwise, the range is intended to include both the upper and lower values and all intervening values of the range.

[0037] In these examples, the parts and percentages are by mass unless otherwise indicated.

[0038] "Parts by mass" refers to a basic unit of measurement that represents the proportional relationship of the mass of multiple components, 1 part can represent any unit mass, such as 1 g, 2.689 g, etc. If we say that the mass of component A is a parts, and the mass of component B is b parts, it means that the ratio of the mass of component A to the mass of component B is a:b. Alternatively, it means that the mass of component A is aK, and the mass of component B is bK (K is an arbitrary number, indicating a multiple factor). It should not be misunderstood that unlike parts by mass, the sum of the parts by mass of all components is not limited to 100 parts.

[0039] "And / or" is used to indicate that one or both of the described conditions can occur, for example, A and / or B includes (A and B) and (A or B).

[0040] In addition, the terms "first", "second" are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0041] The present application provides a silicon-containing photoacid generator, the chemical structure of which is shown in formula I:

[0042]

[0043] In formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or a benzene ring.

[0044] The present application also provides a preparation method of the above-mentioned silicon-containing photoacid generator, comprising:

[0045] 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol is mixed with acetone and triethylamine to obtain a mixed solution, and the mixed solution is cooled to 0-5℃;

[0046] 3-aminopropyltriethoxysilane is added to the mixed solution to perform a first reaction to obtain an intermediate product, and the first reaction time can be, for example, 0.5-5h;

[0047] diazonaphthoquinone sulfonyl chloride is added to the intermediate product to perform a second reaction to obtain the silicon-containing photoacid generator, and the second reaction time can be, for example, 1-5h.

[0048] The chemical reaction process of the preparation method of the silicon-containing photoacid generator of this embodiment is shown as follows:

[0049]

[0050] wherein Et3N represents triethylamine, and ACE represents acetone.

[0051] The application further provides a silicon-containing photoacid generator, which has a chemical structural formula as shown in formula II:

[0052]

[0053] The application further provides a preparation method of the above-mentioned silicon-containing photoacid generator, which comprises:

[0054] 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol is mixed with acetone and triethylamine to obtain a mixed solution, and the mixed solution is cooled to 0-5℃;

[0055] N-2-(aminoethyl)-3-aminopropyltrimethoxysilane is added to the mixed solution to perform a first reaction to obtain an intermediate product, and the first reaction time can be, for example, 0.5-5h;

[0056] diazonaphthoquinone sulfonyl chloride is added to the intermediate product to perform a second reaction to obtain the silicon-containing photoacid generator, and the second reaction time can be, for example, 1-5h.

[0057] The chemical reaction process of the preparation method of the silicon-containing photoacid generator of this embodiment is shown as follows:

[0058]

[0059] wherein Et3N represents triethylamine, and ACE represents acetone.

[0060] The application further provides a thick film photoresist, which comprises, in mass fraction, 30-90 parts of phenolic resin, 5-30 parts of photosensitizer, 5-40 parts of the above-mentioned silicon-containing photoacid generator, 60-180 parts of solvent and 1-5 parts of leveling agent.

[0061] The phenolic resin may be, for example, 30 parts, 40 parts, 50 parts, 60 parts, 70 parts, 80 parts, 90 parts, or any value between 30 and 90 parts; the photosensitizer may be, for example, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, or any value between 5 and 30 parts; the silicon-containing photoacid generator may be, for example, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, 30 parts, 35 parts, 40 parts, or any value between 5 and 40 parts; the solvent may be, for example, 60 parts, 70 parts, 80 parts, 90 parts, 100 parts, 110 parts, 120 parts, 130 parts, 140 parts, 150 parts, 160 parts, 170 parts, 180 parts, or any value between 60 and 180 parts; and the leveling agent may be, for example, 1 part, 2 parts, 3 parts, 4 parts, 5 parts, or any value between 1 and 5 parts.

[0062] In some embodiments, the photosensitizer is a diazonaphthoquinone-based photosensitizing compound.

[0063] In some embodiments, the solvent includes at least one of propylene glycol methyl ether acetate, dimethylacetamide, dimethylbenzene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, gamma-butyrolactone, and N-methylpyrrolidone.

[0064] In some embodiments, the leveling agent includes at least one of MEGAFACE, F-563, polymethylphenylsiloxane, and polydimethylsiloxane.

[0065] The present application also provides a photoresist layer formed by curing the thick film photoresist described above.

[0066] The present application also provides a method for preparing the photoresist layer described above, including mixing raw components of the thick film photoresist to form a glue solution, and performing spin coating, baking, exposure, and development on a substrate to obtain the photoresist layer.

[0067] In some embodiments, the method for preparing the photoresist layer includes spin coating on a silicon wafer substrate at a pre-rotation speed of 200-1000 rpm, a main rotation speed of 1000-3000 rpm, a baking temperature of 90-125 °C, an exposure dose of 60-200 mj / cm2, a gap of 10-15 um, and a developing solution of 2.38% TMAH, and a developing time of 60-100 s. 2

[0068] ​The embodiments of the present application will be described in detail below with specific examples, but those skilled in the art will understand that the following examples are only for illustration of the present application and should not be regarded as limiting the scope of the present application. The specific conditions are not specified in the examples, and the conventional conditions or the conditions recommended by the manufacturer are used. The reagents or instruments used are not specified by the manufacturer, and are conventional products that can be obtained by commercial purchase.

[0069] Example 1

[0070] This example first provides a silicon-containing photoacid generator, and the preparation method thereof comprises the following steps:

[0071] In a three-necked flask with a thermometer and mechanical stirring, 10.00 g (25.90 mmol, 1.0 eq) of raw material 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol, and 60 mL of acetone, 15.72 g (103.60 mmol, 6.0 eq) of triethylamine were added, and the temperature was lowered to 0°C under stirring, while 6.4 mL (6.02 g, 27.20 mmol, 1.05 eq) of 3-aminopropyltriethoxysilane was added dropwise using a constant pressure dropping funnel, and after the dropwise addition was completed, the reaction was carried out for 1 hour, and then 35.40 g (132.9 mmol, 5.1 eq) of diazonium naphthoquinone sulfonyl chloride was added, and stirring was continued for 2 h, and the reaction progress was controlled by liquid chromatography. After the reaction was completed, 250 mL of n-heptane was added and stirred for 10 min, then filtered, and the filter cake was washed with n-heptane, dried and weighed to obtain 30.94 g of crude silicon-containing photoacid generator of Example 1, with a yield of 69%, and the structural formula is as shown below:

[0072]

[0073] The nuclear magnetic resonance spectrum data thereof are as follows:

[0074] 1 H NMR (Chloroform-d, 500 MHz): δ (ppm) 8.15-8.08 (m, 5H), 7.81-

[0075] 7.72 (m, 5H), 7.64 (d, J = 7.1 Hz, 2H), 7.11 (dt, J = 8.4, 1.1 Hz, 1H), 7.05 (p,

[0076] J = 0.9 Hz, 1H), 6.78 (dd, J = 8.4, 2.3 Hz, 1H), 6.64 (d, J = 2.2 Hz, 1H), 4.00 (t,

[0077] J = 0.9 Hz, 2H), 3.88 (dt, J = 5.6, 1.1 Hz, 1H), 3.79 (q, J = 7.5 Hz, 3H), 3.72 (tt,

[0078] J = 5.5, 4.6 Hz, 0 H), 2.73 (td, J = 6.5, 4.6 Hz, 1 H), 1.69 - 1.59 (m, 1 H), 1.22 (t, J = 7.4 Hz, 4 H), 0.71 (t, J = 9.1 Hz, 1 H);

[0079] 13 C NMR (Common NMR Solvents, 125 MHz): δ (ppm) 178.25, 177.69, 149.42, 148.58, 147.26, 138.23, 133.14, 132.19, 131.51, 131.24, 131.04, 131.02, 130.58, 130.02, 129.92, 129.49, 129.20, 128.59, 128.51, 128.04, 125.74, 122.51, 116.82, 114.52, 58.42, 53.83, 50.90, 30.37, 23.27, 18.28, 10.48.

[0080] The present embodiment also provides a thick film photoresist, comprising, in parts by mass: 80 parts of phenolic resin, 10 parts of photosensitizer, 7 parts of silicon-containing photoacid generator of Example 1, 160 parts of solvent, and 3 parts of leveling agent. The phenolic resin is PR-55605 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazido naphthoquinone-5-sulfonate, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563.

[0081] The present embodiment also provides a method for preparing a photoresist layer, comprising the following steps:

[0082] The raw material components of the thick film photoresist are mixed, shaken on a shaking table for 48 hours, filtered three times through a 3um filter membrane, and prepared into a glue solution; the substrate is a 4-inch silicon wafer, the pre-spin coating speed is 1000 rpm, the main rotation speed is 1800 rpm, the glue is uniformly coated, the baking temperature is 110°C, the I-line proximity exposure machine is used, the exposure dose is 90 mj / cm2, the gap is 10um, and the developer is 2.38% TMAH, and the developing time is 75s. The resolution, morphology, heat resistance, and adhesion of the pattern after exposure and development are tested; whether the morphology changes is observed under an optical microscope (OM). 2

[0083] Example 2

[0084] ​Example 2 differs from Example 1 in that the thick film photoresist of Example 2 comprises, in parts by mass: 72 parts of phenol formaldehyde resin, 8 parts of photosensitizer, 17 parts of the silicon-containing photoacid generator of Example 1, 160 parts of solvent, and 3 parts of leveling agent, wherein the phenol formaldehyde resin is PR-55924 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazidonaphthoquinone-5-sulfonic acid ester, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563. The remaining steps are the same as those of Example 1.

[0085] Example 3

[0086] This example first provides a silicon-containing photoacid generator, a preparation method thereof comprising the following steps:

[0087] In a three-necked flask with a thermometer and mechanical stirring, 10.00 g (25.90 mmol, 1.0 eq) of raw material 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol, and 60 mL of acetone, 15.72 g (103.60 mmol, 6.0 eq) of triethylamine were added, and the temperature was lowered to 0°C under stirring, while 6.4 mL (6.02 g, 27.20 mmol, 1.05 eq) of N-2-(aminoethyl)-3-aminopropyltrimethoxysilane was added dropwise using a constant pressure dropping funnel. After the dropwise addition was completed, the reaction was allowed to proceed for 1 hour, and then 35.40 g (132.9 mmol, 5.1 eq) of diazonium naphthoquinone sulfonyl chloride was added, and stirring was continued for 2 h. The reaction progress was monitored by liquid chromatography. After the reaction was completed, 250 mL of n-heptane was added, and stirring was continued for 10 min, followed by filtration. The filter cake was washed with n-heptane, and was dried and weighed. The crude product of the silicon-containing photoacid generator of Example 3 was obtained in a yield of 64%, and the structural formula is shown below:

[0088]

[0089] The nuclear magnetic resonance spectrum data thereof are shown below:

[0090] 1H NMR (Chloroform-d, 500 MHz): δ (ppm) 8.15-8.08 (m, 5H), 7.81-7.72 (m, 5H), 7.64 (d, J = 7.1 Hz, 3H), 7.11 (dt, J = 8.4, 1.1 Hz, 1H), 7.04 (q, J = 1.0 Hz, 1H), 6.78 (dd, J = 8.4, 2.3 Hz, 1H), 6.64 (d, J = 2.2 Hz, 1H), 4.00 (t, J = 0.9 Hz, 2H), 3.87 (dt, J = 5.3, 1.1 Hz, 1H), 3.79 (q, J = 7.5 Hz, 3H), 2.98 (tt, J = 5.1, 4.2 Hz, 1H), 2.78-2.71 (m, 2H), 2.68-2.56 (m, 2H), 1.67-1.57 (m, 1H), 1.22 (t, J = 7.4 Hz, 5H), 0.71 (t, J = 9.1 Hz, 1H);

[0091] 13 C NMR (Common NMR Solvents, 125 MHz): δ (ppm) 178.25, 177.69, 149.42, 148.58, 147.26, 138.23, 133.17, 132.19, 131.51, 131.24, 131.04, 131.02, 130.58, 130.02, 129.92, 129.49, 129.20, 128.59, 128.51, 128.04, 125.74, 122.51, 116.82, 114.52, 58.42, 53.47, 51.28, 49.06, 48.34, 30.37, 23.31, 18.28, 10.48.

[0092] The present embodiment also provides a thick film photoresist, comprising, in mass fraction: 70 parts of phenolic resin, 12 parts of photosensitizer, 15 parts of silicon-containing photoacid generator of Example 3, 160 parts of solvent and 3 parts of leveling agent. The phenolic resin is PR-55873 (purchased from Sumitomo Bakelite Co., Ltd.), the photosensitizer is 2,3,4-trihydroxybenzophenone 1,2-diazido naphthoquinone-5-sulfonate, the solvent is propylene glycol methyl ether acetate, and the leveling agent is F-563.

[0093] The present embodiment also provides a preparation method of a photoresist layer, comprising the following steps:

[0094] The raw material components of the thick film photoresist were mixed, shaken on a shaker for 48 hours, filtered 3 times through a 3um filter membrane to prepare a glue solution; the substrate was a 4-inch silicon wafer, the pre-spin coating speed was 1000 rpm, the main rotation speed was 1800 rpm, the glue was uniformly coated, the baking temperature was 110°C, the I-line proximity exposure machine, the exposure dose was 90 mj / cm 2 , Gap 10um, the developer was 2.38% TMAH, the developing time was 75s. The resolution, morphology, heat resistance and adhesion of the pattern after exposure and development were tested; the sample was observed under an optical microscope (OM) to observe whether the morphology changed.

[0095] Comparative Example 1

[0096] The difference between Comparative Example 1 and Example 1 is that the thick film photoresist of Comparative Example 1 comprises, by mass fraction: 80 parts of phenolic resin, 17 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as those of Example 1.

[0097] Comparative Example 2

[0098] The difference between Comparative Example 2 and Example 2 is that the thick film photoresist of Comparative Example 2 comprises, by mass fraction: 72 parts of phenolic resin, 25 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as those of Example 2.

[0099] Comparative Example 3

[0100] The difference between Comparative Example 3 and Example 3 is that the thick film photoresist of Comparative Example 3 comprises, by mass fraction: 70 parts of phenolic resin, 27 parts of photosensitizer, 160 parts of solvent and 3 parts of leveling agent, and the remaining steps are the same as those of Example 3.

[0101] The adhesion between the photoresist of Examples 1-3 and Comparative Examples 1-3 and the substrate is shown in Figures 1 to 6 , and the performance of the photoresist layer of each example and comparative example is shown in Table 1.

[0102] The resolution, heat resistance, sidewall perpendicularity and adhesion performance test method: 1000 rpm pre-spin coating speed, main rotation speed of 1800 rpm, glue is uniformly coated, baking temperature is 110°C, I-line proximity exposure machine, exposure dose is 90 mj / cm 2 , Gap 10um, the developer was 2.38% TMAH, the developing time was 75s, and the observation under OM was performed.

[0103] The etch resistance test method: the sample after exposure and development was immersed in different concentrations of acid, such as sulfuric acid or hydrochloric acid solution, for 2 min, and the appearance change and surface damage were observed.

[0104] Table 1: Comparison of properties of the photoresist layer of each example and comparative example

[0105]

[0106] As can be seen from the test data in Table 1, the adhesion, heat resistance and resolution of Examples 1 to 3 are improved compared with Comparative Examples 1 to 3 after the addition of the silicon-containing photoacid generator. Therefore, the addition of the silicon-containing photoacid generator can improve the adhesion, resolution, sidewall perpendicularity and heat resistance of the photoresist and the substrate to some extent, and prevent delamination. This is because the silicon-containing photoacid generator contains siloxane on one end, which can interact with the silicon of the substrate, and contains a benzene ring on the other end, which has intermolecular forces with the resin, thus increasing the adhesion to link the resin and the substrate together. In addition, the silicon-containing photoacid generator has a high degree of esterification, which increases the dissolution inhibition, increases the ratio of non-exposed area to exposed area, and thus improves the resolution and sidewall perpendicularity. In addition, the silicon-containing photoacid generator has multiple benzene rings, thus increasing the heat resistance.

[0107] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, and are not limiting; although the present application has been described in detail with reference to the above examples, those skilled in the art should understand that they can still modify the technical solutions described in the above examples, or make equivalent substitutions for part or all of the technical features; and these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the examples of the present application.

[0108] In addition, those skilled in the art will understand that although some of the embodiments herein include certain features included in other embodiments but not others, the combination of features of different embodiments means that it is within the scope of the present application and forms different embodiments. For example, in the above claims, any one of the claimed embodiments can be used in any combination. The information disclosed in the BACKGROUND section is only intended to deepen the understanding of the general background of the present application, and should not be considered as acknowledging or implying in any form that the information constitutes prior art known to those skilled in the art.

Claims

1. A silicon-containing photoacid-generating agent, characterized in that, Its chemical structural formula is shown in Formula I: In Formula I, R1 is selected from methyl or ethyl, and R2 is selected from hydrogen or benzene ring.

2. A method for preparing a silicon-containing photoacid-generating agent as described in claim 1, characterized in that, include: 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol was mixed with acetone and triethylamine to obtain a mixed solution; 3-Aminopropyltriethoxysilane was added to the mixed solution to carry out a first reaction, yielding an intermediate product; Diazonaphthoquinone sulfonyl chloride was added to the intermediate product for a second reaction to obtain the silicon-containing photoacid-producing agent.

3. A silicon-containing photoacid-generating agent, characterized in that, Its chemical structural formula is shown in Formula II:

4. A method for preparing a silicon-containing photoacid-generating agent as described in claim 3, characterized in that, include: 2,6-bis(2,4-dihydroxybenzyl)-4-benzylchlorophenol was mixed with acetone and triethylamine to obtain a mixed solution; N-2-(aminoethyl)-3-aminopropyltrimethoxysilane was added to the mixed solution to carry out a first reaction, yielding an intermediate product; Diazonaphthoquinone sulfonyl chloride was added to the intermediate product for a second reaction to obtain the silicon-containing photoacid-producing agent.

5. A thick-film photoresist, characterized in that, The product comprises, by weight parts: 30 to 90 parts of phenolic resin, 5 to 30 parts of photosensitizer, 5 to 40 parts of the silicon-containing photoacid-generating agent as described in claim 1 or 2, 60 to 180 parts of solvent, and 1 to 5 parts of leveling agent.

6. The thick-film photoresist according to claim 5, characterized in that, The photosensitizer is a diazonoquinone-type photosensitizing compound.

7. The thick-film photoresist according to claim 5, characterized in that, The solvent includes at least one of propylene glycol methyl ether acetate, dimethylacetamide, xylene, anisole, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol methyl ether acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, butyl acetate, ethyl acetate, ethyl lactate, γ-butyrolactone, and N-methylpyrrolidone.

8. The thick-film photoresist according to claim 5, characterized in that, The leveling agent includes at least one of MEGAFACE, F-563, polymethylphenylsiloxane, and polydimethylsiloxane.

9. A photoresist layer, characterized in that, It is formed by curing the thick film photoresist according to any one of claims 5-8.

10. A method for preparing a photoresist layer as described in claim 9, characterized in that, include: The raw material components of the thick film photoresist are mixed to form a photoresist solution; The photoresist layer is obtained by homogenizing, baking, exposing and developing the adhesive solution on a substrate.

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