Perovskite quantum dot / pvdf light-emitting film, preparation method and application thereof

Abstract

The application discloses a perovskite quantum dot / PVDF light-emitting film and a preparation method and application thereof, and relates to the field of optoelectronic materials. The preparation method of the perovskite quantum dot / PVDF light-emitting film is to perform soaking treatment on a perovskite quantum dot / PVDF composite film, and the soaking treatment is to perform soaking treatment on the perovskite quantum dot / PVDF composite film in an alkali solution with a pH value greater than 7. The soaking treatment of the alkali solution makes PVDF undergo a de-HF reaction to form a conjugated double bond structure, and F ions are used to in-situ passivate surface defects of perovskite quantum dots, so that the light-emitting efficiency and long-term stability of the film are significantly improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of optoelectronic materials, in particular to a perovskite quantum dot / PVDF light-emitting film and a preparation method and application thereof. BACKGROUND

[0002] Perovskite quantum dots, as a new type of semiconductor nanomaterial, have attracted extensive attention in the field of optoelectronic devices due to their unique optical properties, such as high fluorescence quantum yield, narrow emission bandwidth and tunable emission wavelength. In recent years, perovskite quantum dots have made important progress in the application of LEDs, photovoltaic devices, lasers and other aspects. However, despite their excellent optical properties, perovskite quantum dots still face some key challenges, especially in terms of light-emitting efficiency and stability. There are a large number of defect states on the surface of perovskite quantum dots, which will cause non-radiative recombination and significantly reduce the light-emitting efficiency. Especially for red perovskite quantum dots (such as CH3NH3PbI3, FAPbI3), the surface defects are more serious, resulting in low light-emitting efficiency. In addition, surface defects will accelerate the aging and decomposition of quantum dots, affecting their long-term stability, especially in harsh environments such as high temperature and high humidity, this aging phenomenon is more obvious.

[0003] Polyvinylidene fluoride (PVDF) is a high-performance polymer with good mechanical properties, chemical stability and electrical properties, widely used in battery separators, sensors, coating materials and other fields. However, the inherent non-polar characteristics of PVDF limit its application in light-emitting materials. Specifically, the interface compatibility between perovskite quantum dots and PVDF is poor, resulting in uneven dispersion of quantum dots in the PVDF matrix, affecting the light-emitting efficiency.

[0004] In summary, the existing perovskite quantum dot / PVDF light-emitting film has many shortcomings in terms of light-emitting efficiency and stability, especially in the red region. Therefore, it is of great significance and application value to develop a perovskite quantum dot / PVDF light-emitting film that can significantly improve the light-emitting efficiency and stability and a preparation method thereof. SUMMARY

[0005] In order to solve the above problems, the present application provides a preparation method of a perovskite quantum dot / PVDF light-emitting film. The preparation method significantly improves the light-emitting efficiency and stability of the perovskite quantum dot / PVDF light-emitting film through alkali treatment, realizing efficient modification of the perovskite quantum dot / PVDF composite film to meet the demand for high-performance light-emitting materials in the field of optoelectronic devices, display devices and other fields.

[0006] The application further provides the perovskite quantum dot / PVDF light-emitting film prepared by the preparation method.

[0007] The application further provides application of the perovskite quantum dot / PVDF light-emitting film.

[0008] The application adopts the following technical solutions:

[0009] A preparation method of a perovskite quantum dot / PVDF light-emitting film, the preparation method is soaking treatment of a perovskite quantum dot / PVDF composite film, the soaking treatment is soaking treatment of the perovskite quantum dot / PVDF composite film in a solution with a pH value greater than 7. The solution with a pH value greater than 7 is an alkaline solution, which can be a weak alkaline solution or a strong alkaline solution, and preferably a strong alkaline solution.

[0010] The molar concentration of OH- in the solution is 0.1 M (mol / L) to 20 M. -

[0011] The treatment time of the soaking treatment is 1 minute to 10 hours.

[0012] The treatment time of the soaking treatment is 30 minutes to 5 hours.

[0013] The temperature of the soaking treatment temperature is 20 DEG C to 100 DEG C, or the soaking treatment is carried out under stirring or ultrasonic conditions.

[0014] The preparation method further comprises the step of cleaning and drying the composite film after the soaking treatment.

[0015] After the cleaning and drying, the preparation method further comprises the step of annealing treatment of the composite film, the annealing temperature is 20 DEG C to 150 DEG C, and the annealing time is 10 minutes to 2 hours.

[0016] Further, the solution is a hydroxide solution, a carbonate solution or a bicarbonate solution.

[0017] Correspondingly, the application further provides the perovskite quantum dot / PVDF light-emitting film prepared by the preparation method.

[0018] The application of the perovskite quantum dot / PVDF light-emitting film is applied in a Micro-LED, a quantum dot light-emitting diode display, a solar cell or a photoelectric detector.

[0019] The application has the following beneficial effects:

[0020] ​(1) The present application makes PVDF undergo HF removal reaction by soaking treatment of alkaline solution, forms conjugated double bond structure, and passivates perovskite quantum dot surface defects in situ by F ions, significantly improves the light emitting efficiency and long-term stability of the film.

[0021] (2) The method is simple and easy to operate, low in cost, suitable for batch production, and the prepared film shows excellent performance in high humidity and high temperature environment, suitable for optoelectronic devices, display technology, biological sensing and other fields, has significant innovation and practical value; especially suitable for the manufacture of various advanced electronic and optoelectronic devices such as Micro-LED, liquid crystal display backlight, quantum dot light emitting diode (QLED) display, solar cell, photodetector, etc. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 The luminescence spectrum comparison chart of the film obtained from the present application example 1 and comparative example 1.

[0023] Figure 2 The luminescence spectrum comparison chart of the film obtained from the present application example 2 and comparative example 2.

[0024] Figure 3 The luminescence spectrum comparison chart of the film obtained from the present application example 3 and comparative example 3.

[0025] Figure 4 The luminescence spectrum comparison chart of the film obtained from the present application example 4 and comparative example 4.

[0026] Figure 5 The luminescence spectrum comparison chart of the film obtained from the present application example 5 and comparative example 5. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical scheme and advantages of the present application clearer, the present application will be further described in detail below in combination with the drawings and examples. It should be understood that the specific examples described herein are only used to explain the present application and do not limit the present application. In addition, the technical features involved in each embodiment of the present application described below can be combined with each other as long as they do not conflict with each other. Any technology realized based on the above description of the present application is included in the scope intended to be protected by the present application.

[0028] Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods.

[0029] A method for preparing a perovskite quantum dot / PVDF luminescent thin film, wherein the preparation method involves immersing the perovskite quantum dot / PVDF composite film in a solution with a pH value greater than 7. The solution with a pH value greater than 7 is an alkaline solution, which can be a strongly alkaline solution or a weakly alkaline solution. The solution is a hydroxide solution, a carbonate solution, or a bicarbonate solution. Preferably, the solution contains OH-. - The molar concentration is from 0.1 M to 20 M, and more preferably, the OH in the solution... - The molar concentration ranges from 1 M to 5 M.

[0030] The inventors discovered that alkali treatment causes PVDF to undergo a de-HF reaction, forming a conjugated double bond structure, and F ions can passivate perovskite quantum dot surface defects in situ, significantly improving the luminescence efficiency and stability of the film.

[0031] The soaking treatment time is from 1 minute to 10 hours; the alkali treatment temperature is from 20°C to 100°C.

[0032] Preferably, the soaking treatment is carried out under stirring or ultrasonic conditions to ensure uniformity of the treatment.

[0033] Among them, perovskite quantum dots include, but are not limited to, lead halide perovskite materials such as CsPbX3 (X = Cl, Br, I) and CH3NH3PbX3 (X = Cl, Br, I), as well as other types of perovskite materials such as methylamine lead iodide (MAPbI3) and formamidinium lead iodide (FAPbI3).

[0034] The molecular weight of the PVDF is in the range of 10,000 to 1,000,000 Da, preferably 50,000 to 800,000 Da.

[0035] In one embodiment, the preparation method includes the following steps:

[0036] (1) Immersion treatment: The perovskite quantum dot / PVDF composite membrane is immersed in a solution with a pH value greater than 7;

[0037] (2) Cleaning and drying treatment: The composite membrane after soaking is cleaned and dried. Deionized water is used for cleaning, the drying temperature is 40℃ to 80℃, preferably 60℃, and the drying time is 1 hour to 24 hours, preferably 2 hours to 6 hours.

[0038] In another embodiment, the preparation method includes the following steps:

[0039] (1) Immersion treatment: The perovskite quantum dot / PVDF composite membrane is immersed in a solution with a pH value greater than 7;

[0040] (2) Cleaning and drying treatment: the composite film after soaking treatment is cleaned and dried. Deionized water is used for cleaning, the drying temperature is 40-80°C, preferably 60°C, and the drying time is 1-24 hours, preferably 2-6 hours.

[0041] (3) Annealing treatment: the composite film after cleaning and drying is subjected to annealing treatment, the annealing temperature is 20-150°C, and the annealing time is 10 minutes to 2 hours, so as to further improve the crystallinity and photoelectric performance of the film.

[0042] The perovskite quantum dots can be synthesized by in-situ growth method, hot injection method and room temperature crystallization method, and uniformly dispersed in the PVDF matrix by spin coating, spraying, and blade coating.

[0043] Preferably, the perovskite quantum dot / PVDF composite film can be prepared by the following method:

[0044] 1. Preparation of perovskite precursor solution

[0045] 1.1 Preparation of PVDF solution

[0046] PVDF powder with different molecular weights (Mw = 10,000-1,000,000 Da, preferably 50,000-800,000 Da) is selected and dissolved in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with different volume ratios (DMF:DMSO = 1:0, 5:1, 4:1, 3:1, 2:1, 3:2, 1:1 and 0:1) at 80°C under stirring until completely transparent and uniform. Selecting appropriate PVDF molecular weight and solvent ratio can optimize the mechanical and optical properties of the film.

[0047] 1.2 Dissolution of perovskite components

[0048] The molar ratio of perovskite precursor is set, for example, CsPbX3 (X = Cl, Br, I), CH3NH3PbX3 (X = Cl, Br, I) and other types of perovskite materials such as methylamine lead iodide (MAPbI3) and formamidinium lead iodide (FAPbI3). The specific steps are as follows:

[0049] Dissolve 0.5 mmol PbBr2and 0.5 mmol CsBr (or other perovskite precursor) in 10 mL DMF, stir for 30 minutes to ensure complete dissolution, forming a uniform perovskite precursor solution. Adjust the molar ratio of perovskite precursor according to the desired color and performance requirements, for example, 0.03 mmol of CsI is mixed with different molar ratios (3:1, 2:1, 1:1, 1:2 and 1:3 respectively) of DMAPbI3 / DMAPbBr3in the above prepared PVDF solution, ensuring that the perovskite components are uniformly dispersed in the polymer matrix.

[0050] 2. Synthesis of perovskite quantum dot / PVDF composite film

[0051] Uniformly coat the above prepared precursor solution on the surface of the glass substrate to form a transparent and uniform thickness film. The specific steps are as follows:

[0052] Use spin coating, spray coating or blade coating method to uniformly coat the precursor solution on the glass substrate to form a film with a thickness of about 2 μm.

[0053] Place the substrate coated with the precursor solution in a blast furnace, evaporate the DMF / DMSO solvent in an air environment at 65°C, and grow perovskite quantum dots in situ, process for 15 minutes, and finally obtain perovskite quantum dot / PVDF composite film.

[0054] The film can also contain other additives before processing, such as plasticizers, crosslinking agents, antioxidants, etc., to further improve its mechanical properties and chemical stability.

[0055] Example 1

[0056] (1) Preparation step: preparation of perovskite quantum dot / PVDF composite film.

[0057] Dissolve 0.5 mmol PbBr2and 0.5 mmol CsBr in 10 mL DMF, stir for 30 minutes to form a uniform perovskite precursor solution. Then, mix the precursor solution with a 10 wt% PVDF solution (molecular weight 800,000 Da) at a volume ratio of 1:9, ultrasonic dispersion for 30 minutes to ensure uniform distribution of the perovskite precursor in the PVDF matrix. Uniformly coat the mixed solution on the glass substrate by spin coating to form a film with a thickness of about 8 μm. Place the substrate coated with the precursor solution in a blast furnace, evaporate the DMF solvent in an air environment at 65°C, and grow CsPbBr3perovskite quantum dots in situ, process for 15 minutes, and finally obtain a green light-emitting perovskite quantum dot / PVDF composite film.

[0058] (2) Immersion treatment: The above composite film was immersed in 1 M NaOH solution for 1 hour at 25 °C, and ultrasonic treatment was performed to ensure uniformity of the treatment.

[0059] (3) Washing and drying: The composite film after immersion treatment was washed with deionized water for 3 times, 5 minutes each time, and then dried at 60 °C for 2 hours.

[0060] Comparative Example 1

[0061] (1) Preparation step: Perovskite quantum dot / PVDF composite film was prepared.

[0062] 0.5 mmol of PbBr2and 0.5 mmol of CsBr were dissolved in 10 mL of DMF, stirred for 30 minutes to form a uniform perovskite precursor solution. Subsequently, the precursor solution was mixed with a 10 wt% PVDF solution (molecular weight 800,000 Da) at a volume ratio of 1:9, and ultrasonic dispersion was performed for 30 minutes to ensure uniform distribution of the perovskite precursor in the PVDF matrix. The mixed solution was uniformly coated on a glass substrate by spin coating to form a thin film with a thickness of about 8 μm. The substrate coated with the precursor solution was placed in a blast furnace, and by evaporating the DMF solvent and growing CsPbBr3perovskite quantum dots in situ in an air environment at 65 °C, a 15-minute treatment was performed, and finally a green light-emitting perovskite quantum dot / PVDF composite film was obtained.

[0063] (2) Washing and drying: Washing with deionized water for 3 times, 5 minutes each time, and then drying at 60 °C for 2 hours.

[0064] Reference Figure 1 , Figure 1 The luminescence spectrum comparison chart of Example 1 and Comparative Example 1. The test results show that the luminescence position of the treated film remains almost unchanged, and the luminescence intensity at 514 nm is increased by 42.6%. The double eight five aging test shows that the aging time of the film is increased from the original 12 hours to 48 hours, showing a significant improvement in stability.

[0065] Example 2

[0066] (1) Preparation step: Perovskite quantum dot / PVDF composite film was prepared.

[0067] A 0.2 mmol PbBr2and 0.2 mmol CH3NH3Br were dissolved in 10 mL DMF, stirred for 30 minutes to form a uniform perovskite precursor solution. Subsequently, the precursor solution was mixed with a 15 wt% PVDF solution (molecular weight 600,000 Da) at a volume ratio of 1:8, and ultrasonically dispersed for 1 hour to ensure uniform dispersion of the quantum dots in the PVDF matrix. The mixed solution was uniformly coated on a flexible plastic substrate by a doctor blade method to form a thin film with a thickness of about 7 μm. The substrate coated with the precursor solution was placed in a blast furnace, and treated by evaporating the DMF solvent and growing CH3NH3PbBr3perovskite quantum dots in situ in an air environment at 65°C for 15 minutes, to finally obtain a green light-emitting perovskite quantum dot / PVDF composite film.

[0068] (2) Immersion treatment: the perovskite quantum dot / PVDF composite film was treated in a 5 M NaOH solution for 30 minutes at a treatment temperature of 50°C.

[0069] (3) Washing and drying treatment: the treated composite film was washed with deionized water 3 times, each time for 5 minutes, and then dried at 80°C for 4 hours.

[0070] (4) Annealing treatment: the washed and dried treated composite film was annealed at 60°C for 1 hour.

[0071] Comparative Example 2

[0072] In comparison with Example 2, Comparative Example 2 was not subjected to immersion treatment.

[0073] Reference is made to Figure 2 , Figure 2 The comparative diagram of the luminescence spectra of the luminescent films obtained in Example 2 and Comparative Example 2 is shown. Performance tests showed that the luminescence intensity of the treated film at 515 nm was increased by 71.6% (Example 2: 0.5 mW / cm2; Comparative Example 2: 0.87 mW / cm2). Figure 2 Double 850 aging tests showed that the aging time of the film was increased from the original 2 hours to 12 hours, showing excellent stability and luminescence efficiency.

[0074] Example 3

[0075] (1) Preparation step: perovskite quantum dot / PVDF composite film was prepared.

[0076] A homogeneous perovskite precursor solution was formed by dissolving 0.8 mmol of DMAPbBr3 and 0.8 mmol of CsBr in 5 mL of DMF and 3 mL of DMSO and stirring for 30 minutes. Subsequently, the precursor solution was mixed with a 10 wt% solution of PVDF (molecular weight 800,000 Da) at a volume ratio of 1:9, and ultrasonically dispersed for 30 minutes to ensure uniform distribution of the perovskite precursor in the PVDF matrix. The mixed solution was uniformly coated on a glass substrate by a spin coating method to form a thin film with a thickness of about 8 μm. The substrate coated with the precursor solution was placed in a blast furnace, and in an air environment at 65°C, the CsPbBr3 perovskite quantum dots were grown in situ by evaporating the DMF and DMSO solvents and treated for 15 minutes, finally obtaining a green light-emitting perovskite quantum dot / PVDF composite film.

[0077] (2) Immersion treatment: the composite film was treated in a 1 M KOH solution for 2 hours at a treatment temperature of 25°C.

[0078] (3) Cleaning and drying treatment: the composite film obtained after immersion treatment was cleaned with deionized water for 3 times, 5 minutes each time, and then dried at 40°C for 6 hours to obtain a perovskite quantum dot / PVDF light-emitting thin film.

[0079] Comparative Example 3

[0080] In comparison with Example 3, Comparative Example 3 was not subjected to immersion treatment.

[0081] Figure 3 A comparison chart of the light-emitting spectra of the light-emitting thin films obtained in Example 3 and Comparative Example 3. The test results show that the light-emitting intensity of the treated film at 516 is increased by 68.4% (from 0.8 to 1.36) Figure 3 The double eight five aging test shows that the aging time of the film is increased from the original 13 hours to 48 hours, showing good long-term stability.

[0082] Example 4

[0083] (1) Preparation step: perovskite quantum dot / PVDF composite film was prepared.

[0084] Dissolve 0.35 mmol of PbBr2and 0.35 mmol of CsBr in 10 mL of DMF, and stir for 30 minutes to form a uniform perovskite precursor solution. Then, mix the precursor solution with a 8 wt% PVDF solution (molecular weight 650,000 Da) at a volume ratio of 1:9, and ultrasonically disperse for 1 hour to ensure uniform distribution of the perovskite quantum dots in the PVDF matrix. Uniformly coat the mixed solution on a PET substrate by a spray coating method to form a thin film with a thickness of about 2.5 μm. Place the substrate coated with the precursor solution in a blast furnace, and perform a 15-minute treatment at 65°C in an air environment by evaporating the DMF solvent and growing CsPbI3perovskite quantum dots in situ, to finally obtain a red luminescent perovskite quantum dot / PVDF composite film.

[0085] (2) Immersion treatment: treat the composite film in a 10 M Na2CO3solution for 1 hour at a treatment temperature of 25°C.

[0086] (3) Cleaning and drying treatment: clean the composite film after immersion treatment with deionized water for 3 times, each for 5 minutes; dry the cleaned and dried composite film at 60°C for 3 hours.

[0087] (4) Annealing treatment: anneal the cleaned and dried composite film at 80°C for 1 hour.

[0088] Comparative Example 4

[0089] In comparison with Example 4, Comparative Example 4 does not perform the immersion treatment.

[0090] Figure 4 The comparative diagram of the luminescence spectra of the luminescent films obtained in Example 4 and Comparative Example 4 is shown. Performance tests show that the luminescence intensity of the treated film at 512 nm is increased by 80% (from 0.5 to 0.9) Figure 4 ). Double 85 aging tests show that the aging time of the film is increased from the original 6 hours to 29 hours, showing excellent stability and luminescence efficiency, and being suitable for flexible display devices.

[0091] Example 5

[0092] (1) Preparation step: prepare a perovskite quantum dot / PVDF composite film.

[0093] Dissolve 0.5 mmol of PbI2, 0.5 mmol of PbBr2and 0.5 mmol of CsBr in 10 mL of DMF, and stir for 30 minutes to form a uniform perovskite precursor solution. Then, mix the precursor solution with a 10 wt% PVDF solution (molecular weight 800,000 Da) at a volume ratio of 1:9, and ultrasonically disperse for 30 minutes to ensure uniform distribution of the perovskite quantum dots in the PVDF matrix. Uniformly coat the mixed solution on a silicon substrate by a spin coating method to form a thin film with a thickness of about 2 μm. Place the substrate coated with the precursor solution in a blast furnace, and perform a 15-minute treatment in an air environment at 65°C by evaporating the DMF solvent and growing CsPb(Br / I)3perovskite quantum dots in situ, to finally obtain a perovskite quantum dot / PVDF composite film that emits red light.

[0094] (2) Immersion treatment: treat the composite film in a 2 M NaOH solution for 10 hours.

[0095] (3) Cleaning and drying treatment: clean the composite film after immersion treatment with deionized water for 3 times, 5 minutes each time, and then dry at 60°C for 4 hours.

[0096] (4) Annealing treatment: anneal the cleaned and dried composite film at 110°C for 40 minutes.

[0097] Comparative Example 5

[0098] In comparison with Example 5, Comparative Example 5 does not perform the immersion treatment.

[0099] Figure 5 The comparative diagram of the luminescence spectra of the luminescent films obtained in Example 5 and Comparative Example 5 is shown. The test results show that the luminescence intensity of the treated film at 625 nm is increased by 131% (from 0.5 to 1.15) compared with the untreated film. Figure 5 The double-eight-five aging test shows that the aging time of the film is increased from the original 4 hours to 18 hours, showing excellent long-term stability and being suitable for high-performance optoelectronic devices.

[0100] Example 6

[0101] (1) Preparation step: prepare a perovskite quantum dot / PVDF composite film. (Same as Example 5)

[0102] PbI2, 0.5 mmol PbBr2and 0.5 mmol CsBr were dissolved in 10 mL DMF and stirred for 30 min to form a uniform perovskite precursor solution. Subsequently, the precursor solution was mixed with a 10 wt% PVDF solution (molecular weight 800,000 Da) at a volume ratio of 1:9, and ultrasonically dispersed for 30 min to ensure uniform distribution of perovskite quantum dots in the PVDF matrix. The mixed solution was uniformly coated on a silicon substrate by a spin coating method to form a thin film with a thickness of about 2 μm. The precursor solution-coated substrate was placed in a blast furnace, and by evaporating the DMF solvent and growing CsPb(Br / I)3perovskite quantum dots in situ in an air environment at 65°C, a 15-minute treatment was performed to finally obtain a perovskite quantum dot / PVDF composite film that emits red light.

[0103] (2) Immersion treatment: the composite film was treated in a 20M NaOH solution for 1 min at a temperature of 100°C.

[0104] (3) Cleaning and drying treatment: the composite film after immersion treatment was cleaned with deionized water for 3 times, 5 min each time, and then dried at 80°C for 2 hours.

[0105] (4) Annealing treatment: the composite film after cleaning and drying was annealed at 150°C for 10 min.

[0106] Example 7

[0107] (1) Preparation step: perovskite quantum dot / PVDF composite film was prepared. (Same as Example 5)

[0108] PbI2, 0.5 mmol PbBr2and 0.5 mmol CsBr were dissolved in 10 mL DMF and stirred for 30 min to form a uniform perovskite precursor solution. Subsequently, the precursor solution was mixed with a 10 wt% PVDF solution (molecular weight 800,000 Da) at a volume ratio of 1:9, and ultrasonically dispersed for 30 min to ensure uniform distribution of perovskite quantum dots in the PVDF matrix. The mixed solution was uniformly coated on a silicon substrate by a spin coating method to form a thin film with a thickness of about 2 μm. The precursor solution-coated substrate was placed in a blast furnace, and by evaporating the DMF solvent and growing CsPb(Br / I)3perovskite quantum dots in situ in an air environment at 65°C, a 15-minute treatment was performed to finally obtain a perovskite quantum dot / PVDF composite film that emits red light.

[0109] (2) Immersion treatment: the composite film was treated in a 0.1M NaOH solution for 10 hours at a temperature of 60°C.

[0110] (3) cleaning and drying treatment: the composite film after soaking treatment is cleaned with deionized water for 3 times, 5 minutes each time, and then dried at 60°C for 6 hours.

[0111] (4) annealing treatment: the composite film after cleaning and drying is annealed at 20°C for 2 hours.

[0112] Those skilled in the art will readily understand that the above description is only preferred embodiments of the present application, and is not intended to limit the present application, and any modification, equivalent replacement and improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0113] The part of the present application specification not described in detail belongs to the known technology in the art. The above embodiments are only for the purpose of describing the present application, and are not intended to limit the scope of the present application. The scope of the present application is defined by the appended claims. Various equivalent replacements and modifications made without departing from the spirit and principle of the present application shall be included in the scope of the present application.

Claims

1. A preparation method of a perovskite quantum dot / PVDF light-emitting film, characterized in that: The preparation method is soaking treatment of the perovskite quantum dot / PVDF composite film, the soaking treatment is soaking treatment of the peroviskite quantum dot / PVDF composite film in a solution, the molar concentration of OH - Of the solution is 0.1 M to 20 M, the soaking treatment time is 30 minutes to 5 hours, the soaking treatment temperature is 20 DEG C to 100 DEG C, the preparation method further comprises the step of washing and drying the soaked composite film, and after washing and drying, the preparation method further comprises the step of annealing treatment of the composite film, the annealing temperature is 20 DEG C to 150 DEG C, and the annealing time is 10 minutes to 2 hours.

2. The method for preparing perovskite quantum dot / PVDF luminescent thin films according to claim 1, characterized in that, The soaking treatment is carried out under stirring or ultrasonic conditions.

3. The method for preparing perovskite quantum dot / PVDF luminescent thin films according to claim 1 or 2, characterized in that, The solution is a hydroxide solution, a carbonate solution or a bicarbonate solution.

4. The perovskite quantum dot / PVDF light-emitting film prepared according to any one of claims 1 to 3.

5. The use of the perovskite quantum dots / PVDF light-emitting thin film according to claim 4, characterized in that, The perovskite quantum dot / PVDF light-emitting film is applied in a Micro-LED, a quantum dot light-emitting diode display, a solar cell or a photoelectric detector.

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