Laser heating body and preparation method and application thereof

Abstract

The invention discloses a laser heating body and a preparation method and application thereof.The laser heating body comprises a substrate and a thin film arranged on the back face of the substrate, the substrate is made of SiC, the thin film is made of MN, and M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo and W. According to the invention, the MN thin film is arranged on the SiC substrate, so that the energy absorption efficiency of the laser heating body can be effectively improved, the temperature is obviously increased under the same laser input condition, and the energy-saving effect is further realized.

Description

Technical Field

[0001] The invention relates to the technical field of laser heating materials, and in particular to a laser heating body and a preparation method and application thereof. Background Art

[0002] Laser heating technology plays a vital role in modern industrial manufacturing with its excellent energy conversion efficiency and precise temperature control capabilities. In laser heating technology, choosing the right absorber material is crucial because it directly affects the heating efficiency and equipment performance. In this field, a variety of materials are widely used due to their unique physical and chemical properties. For example, boron nitride (BN) has high thermal conductivity and chemical stability, which is especially suitable for working in high temperature environments; nickel-based alloys have corrosion resistance and high temperature resistance, and occupy a place in industrial heating; silicon carbide (SiC) has excellent thermal stability and high hardness, making it an ideal choice for high temperature applications.

[0003] At present, improving absorption efficiency is an important development direction of absorber materials. In order to achieve efficient utilization of laser energy and reduce the power consumption required to generate laser, it is particularly urgent to research and develop new laser heaters. Summary of the invention

[0004] In view of the shortcomings of the prior art, the purpose of the present invention is to develop a new type of laser heating body to improve the energy absorption efficiency and achieve higher temperature output under the same conditions, thereby saving energy consumption.

[0005] To achieve the above-mentioned purpose, the first aspect of the present invention provides a laser heating body, comprising a substrate and a thin film arranged on the back side of the substrate, the material of the substrate is SiC, the material of the thin film is MN, and M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo, and W.

[0006] The present invention arranges the MN film on the SiC substrate, which can effectively improve the energy absorption efficiency of the laser heating body, so that under the same laser input conditions, the temperature can be significantly increased, thereby achieving energy saving effect.

[0007] Furthermore, the thickness of the film is 10-100 nm. The thickness of the film will have a direct impact on the temperature rise of the laser heating body, and designing a suitable film thickness can achieve the best temperature rise effect.

[0008] Furthermore, the thickness of the substrate is 1-10 mm.

[0009] The second aspect of the present invention provides a method for preparing the above-mentioned laser heating body, using a high-purity M target as a target material, M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo, and W, nitrogen is used as a sputtering gas, and a radio frequency power supply or a direct current power supply is used to perform magnetron sputtering on the back side of a SiC substrate to obtain a laser heating body.

[0010] Furthermore, the preparation method comprises the following steps: S1, cleaning the SiC substrate and sending it into the sputtering chamber; S2, evacuating the sputtering chamber and performing a heating treatment on the substrate; S3, nitrogen is introduced into the sputtering chamber, and the RF power supply or DC power supply is turned on for pre-sputtering; S4, using a high-purity M target as a target material, setting a radio frequency power supply or a direct current power supply, and sputtering and growing a MN film on the back side of the substrate; S5. Turn off the power supply and obtain the laser-heated body after cooling down.

[0011] The present invention adopts magnetron sputtering technology to generate MN film on the surface of SiC substrate, which can form high-quality continuous film and improve the energy efficiency of laser heating process.

[0012] Furthermore, in step S2, the temperature of the substrate is controlled to be 400-1000° C. This temperature range can effectively remove the impurity gas adsorbed on the SiC substrate, providing a high-cleanliness substrate for the growth of the MN film; and this temperature range provides sufficient kinetic energy for the sputtering clusters adsorbed on the substrate surface, so that they form a high-quality continuous film.

[0013] Furthermore, in step S3, the nitrogen pressure is controlled to be 1-10 Pa. In this nitrogen pressure range, the kinetic energy of the sputtered atomic clusters is moderate, which is beneficial to improving the crystal quality of the MN film.

[0014] Furthermore, in step S4, the power of the RF power supply or the DC power supply is controlled to be 10-500 W. In this power range, the sputtering rate of the target material is moderate, which is conducive to the epitaxial growth of the MN film.

[0015] A third aspect of the present invention provides an application of the above-mentioned laser heating body, wherein laser is incident from the front side of the substrate to heat the laser heating body.

[0016] The laser heater of the present invention can improve the energy absorption efficiency, so that under the same input current conditions, the generated laser can increase the temperature by 10% to 20%. This can not only improve the energy efficiency of the laser heating process, but also reduce production costs and promote the application of laser heating technology in a wider range of industrial fields.

[0017] Furthermore, the laser output power is controlled to be 1-200 W. After the SiC substrate is added with the MN film, the temperature can be increased by 50-300°C under the same laser output power. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the structure and usage scenario of the laser heating body in a specific embodiment of the present invention.

[0019] Figure 2 This is a photograph of the SiC substrate in Example 1 of the present invention.

[0020] Figure 3 This is a photograph of the laser heating body in Example 1 of the present invention.

[0021] Figure 4 This is a diagram showing the temperature change of the laser heating body as the TiN film grows in Example 1 of the present invention.

[0022] Figure 5 This is a diagram showing the temperature change of the laser heating body as the TiN film grows in Example 2 of the present invention. DETAILED DESCRIPTION

[0023] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0024] It should be understood that the terms described in the present invention are only for describing special embodiments and are not intended to limit the present invention. In addition, for the numerical range in the present invention, it should be understood that each intermediate value between the upper and lower limits of the scope is also specifically disclosed. Each smaller range between the intermediate value in any stated value or stated range and any other stated value or intermediate value in the described range is also included in the present invention. The upper and lower limits of these smaller ranges can be independently included or excluded in the scope.

[0025] It will be apparent to those skilled in the art that various modifications and variations may be made to the specific embodiments of the present invention without departing from the scope or spirit of the present invention. Other embodiments obtained from the present invention description will be apparent to those skilled in the art.

[0026] The specific embodiment of the present invention provides a laser heating body and a method for preparing the same. The structure of the laser heating body is as follows Figure 1As shown, it includes a substrate 1, the material of the substrate 1 is SiC, and the thickness of the substrate is 1-10 mm. The front side of the substrate 1 faces the laser incident direction (the direction of the arrow in the figure); a film 2 is arranged on the back side of the substrate 1, and the thickness of the film 2 is 10-100 nm. The material of the film 2 is MN. In a specific embodiment, M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo, and W.

[0027] The preparation method of the laser heating body is as follows: using a high-purity M (M=Ti, Nb, V, Zr, Hf, Ta, Mo, W) target as a sputtering target material, using nitrogen as a sputtering gas, and using a radio frequency power supply or a direct current power supply to perform magnetron sputtering on the back of a SiC substrate to form a MN film.

[0028] The specific steps include: S1. Clean the SiC substrate and send it into the sputtering chamber.

[0029] In a specific embodiment, the SiC substrate is placed in an ethanol solution for ultrasonic cleaning for 1 to 10 minutes, blown dry with high-purity nitrogen, fixed on a magnetron sputtering sample stage, and sent into a sputtering chamber. Ultrasonic cleaning is used to remove particles on the surface to ensure the uniformity and density of the film.

[0030] S2. Evacuate the sputtering chamber and heat the substrate.

[0031] In a specific embodiment, the SiC substrate is heated to 400°C to 1000°C, preferably 700°C to 900°C.

[0032] S3. Introduce nitrogen into the sputtering chamber and turn on the RF power supply or DC power supply for pre-sputtering.

[0033] In a specific embodiment, the nitrogen pressure is controlled to be maintained at 1Pa~10Pa, preferably 2Pa~3Pa; the nitrogen gas flow is 1~20sccm. The pre-sputtering power supply power is 10~500W, and the pre-sputtering time is 10~30min. Pre-sputtering can fully remove the contaminated part of the target surface and desorb the impurity gas on the target.

[0034] S4. Use high-purity M target as target material, set RF power supply or DC power supply, and sputter grow MN film on the back side of the substrate.

[0035] In a specific embodiment, the power of the power supply is 10-500W, preferably 100W-200W.

[0036] S5. Turn off the power supply and obtain the laser-heated body after cooling down.

[0037] The laser heating body can improve energy absorption efficiency and reduce energy consumption. The laser is incident from the front of the base of the laser heating body, and the laser output power is controlled to be 1-200W. Under the same laser output power, the laser heating body of the present invention can increase the temperature by 50-300°C relative to pure SiC material, and the increase is 10%-20%.

[0038] The technical solutions and effects of the present invention are illustrated below in conjunction with specific embodiments.

[0039] Example 1 (1) A 17.05×17.05×1.6 mm SiC substrate was placed in an ethanol solution for ultrasonic cleaning for 5 minutes and then dried using a nitrogen air gun. The photo of the SiC substrate is shown in Figure 2 The dried SiC substrate is mounted on a heating table and sent into the sputtering chamber.

[0040] (2) Start the mechanical pump and molecular pump to reduce the back vacuum of the sputtering chamber to 10 −9 Pa. Turn on the heating system and fix the laser output power to 30W. At this time, the substrate temperature is stabilized at 580°C. At the same time, set the nitrogen flow rate to 6.4 sccm, and maintain the nitrogen pressure in the sputtering chamber at 2.67Pa by adjusting the gas valve.

[0041] (3) After the temperature and pressure are stable, turn on the RF power supply, use a high-purity Ti target as the sputtering target, and set the pre-sputtering power supply to 60W. With the heating platform baffle closed, perform pre-sputtering for 10 minutes. After that, set the RF power supply to 100W, turn on the heating platform baffle, and officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample during the sputtering process in real time.

[0042] (4) After sputtering for 5 hours, the RF power supply was turned off, the original nitrogen pressure was kept unchanged, and the temperature was cooled at a rate of 30°C / min. After it dropped to 200°C, it was cooled naturally. Finally, a laser heating body with a TiN film was prepared. The thickness of the TiN film was about 80nm, as shown in the photo. Figure 3 shown.

[0043] Figure 4 The temperature changes of the laser heating body during the sputtering process were recorded. The experimental data showed that as the sputtering time increased, the temperature of the sample stage rose from the initial 594°C to 652°C. During this process, the laser power was maintained at 30W, indicating that at the same laser output power, the temperature of the laser heating body of the TiN film was significantly increased.

[0044] After the laser heating body is cooled down, the laser is incident from the front of the substrate to heat the laser heating body to 594°C. The laser output power is 23W, indicating that the energy consumption required to heat the laser heating body to the same temperature is significantly reduced compared to SiC.

[0045] Example 2 (1) A 17.05×17.05×1.6 mm SiC substrate was placed in an ethanol solution for ultrasonic cleaning for 5 minutes, and then dried using a nitrogen air gun. The dried SiC substrate was mounted on a heating table and placed in a sputtering chamber.

[0046] (2) Start the mechanical pump and molecular pump to reduce the back vacuum of the sputtering chamber to 10 −9 Pa. Turn on the heating system and fix the laser output power to 85W. At this time, the substrate temperature is stable at 958°C. At the same time, set the nitrogen flow rate to 6.4 sccm, and maintain the nitrogen pressure in the sputtering chamber at 2.67Pa by adjusting the gas valve.

[0047] (3) After the temperature and pressure are stable, turn on the RF power supply, use a high-purity Ti target as the sputtering target, and set the pre-sputtering power supply to 60W. With the heating platform baffle closed, perform pre-sputtering for 10 minutes. After that, set the RF power supply to 100W, turn on the heating platform baffle, and officially start sputtering. At the same time, use the temperature detection system to record the temperature changes of the sample during the sputtering process in real time.

[0048] (4) After sputtering for 5 hours, the RF power supply was turned off, the original nitrogen pressure was kept unchanged, and the temperature was lowered at a rate of 30°C / min. After it dropped to 200°C, it was cooled naturally to finally prepare a laser heating body with a TiN film.

[0049] Figure 5 The temperature changes of the laser heating body during the sputtering process were recorded. Experimental data showed that as the sputtering time increased, the temperature of the sample stage rose from the initial 930°C to 1053°C. During this process, the laser power was maintained at 85W, indicating that at the same laser output power, the temperature of the laser heating body of the TiN film was significantly increased.

[0050] After the laser heating body is cooled down, the laser is incident from the front of the substrate to heat the laser heating body to 930°C. The laser output power is 70W, indicating that the energy consumption required to heat the laser heating body to the same temperature is significantly reduced compared to SiC.

[0051] Although the present invention is disclosed as above, the protection scope of the present invention is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, and these changes and modifications will fall within the protection scope of the present invention.

Claims

1. A laser heating element, characterized in that: It comprises a substrate and a thin film arranged on the back side of the substrate, the material of the substrate is SiC, the material of the thin film is MN, and M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo, and W.

2. The laser heating element according to claim 1, characterized in that: The thickness of the film is 10-100 nm.

3. The laser heating element according to claim 1, characterized in that: The thickness of the substrate is 1-10 mm.

4. A method for preparing a laser heating body according to any one of claims 1 to 3, characterized in that: A high-purity M target is used as the target material, M is selected from one of Ti, Nb, V, Zr, Hf, Ta, Mo, and W, nitrogen is used as the sputtering gas, and a radio frequency power supply or a direct current power supply is used to perform magnetron sputtering on the back of a SiC substrate to obtain a laser heating body.

5. The method for preparing a laser heating body according to claim 4, characterized in that: The following steps are involved: S1, cleaning the SiC substrate and sending it into the sputtering chamber; S2, evacuating the sputtering chamber and performing a heating treatment on the substrate; S3, nitrogen is introduced into the sputtering chamber, and the RF power supply or DC power supply is turned on for pre-sputtering; S4, using a high-purity M target as a target material, setting a radio frequency power supply or a direct current power supply, and sputtering and growing a MN film on the back side of the substrate; S5. Turn off the power supply and obtain the laser-heated body after cooling down.

6. The method for preparing a laser heating body according to claim 5, characterized in that: In the step S2, the temperature of the substrate is controlled to be 400-1000°C.

7. The method for preparing a laser heating body according to claim 5, characterized in that: In step S3, the nitrogen pressure is controlled to be 1-10 Pa.

8. The method for preparing a laser heating body according to claim 5, characterized in that: In step S4, the power of the RF power supply or the DC power supply is controlled to be 10-500W.

9. An application of a laser heating body as claimed in any one of claims 1 to 3, characterized in that: The laser is incident from the front side of the substrate to heat up the laser heating body.

10. The use of the laser heating body according to claim 9, characterized in that: Control the laser output power to 1~200W.

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