Electrochromic device and manufacturing method thereof

Abstract

The invention relates to the technical field of electrochromic device preparation, and particularly discloses an electrochromic device and a manufacturing method thereof. The manufacturing method of the electrochromic device comprises the following steps: providing a base material; a first transparent conductive layer is plated on the base material, sputtering forming of the first transparent conductive layer is conducted in a sputter coating mode, the proportion content of oxygen and argon in a sputtering cavity is controlled to be 1: (50-500), and the coating temperature is the room temperature; a first electrochromic layer is plated on the first transparent conductive layer, sputtering forming of the first electrochromic layer is carried out in a sputter coating mode, the proportion content of oxygen and argon in a sputtering chamber is controlled to be (1-2): 1, and the coating temperature is 200-400 DEG C; plating an ion conduction layer above the first electrochromic layer; plating a second electrochromic layer on the ion conducting layer; and a second transparent conductive layer is plated on the second electrochromic layer. The resistance of the first transparent conductive layer of the electrochromic device manufactured by the method is low, and the color changing effect is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of electrochromic device preparation, and in particular to an electrochromic device and a method for preparing the same. Background Art

[0002] The electrochromic device generally includes a substrate layer, a first transparent conductive layer, a first electrochromic layer, an ion conductive layer, a second electrochromic layer, a second transparent conductive layer, a protective layer, etc. Under the action of an external electric field, the first electrochromic layer and the second electrochromic layer of the electrochromic film will undergo a stable and reversible color change.

[0003] In the prior art, in order to make the first transparent conductive layer have high transmittance and low resistance during the processing of the electrochromic device, it is necessary to undergo high temperature annealing, or provide the substrate with a temperature of more than 300°C during the preparation process. In the process of preparing the first electrochromic layer, it is often necessary to provide a temperature of about 300°C to ensure the performance of the film layer. This processing method causes the first transparent conductive layer to undergo two high temperatures, and in the environment of oxygen-doped sputtering of the first electrochromic layer, the resistance of the first transparent conductive layer will increase significantly, which will lead to a poor electrochromic effect of the electrochromic device.

[0004] Therefore, there is an urgent need to propose an electrochromic device and a manufacturing method thereof to solve the above technical problems. Summary of the invention

[0005] According to one aspect of the present invention, the present invention provides a method for manufacturing an electrochromic device. The first transparent conductive layer of the electrochromic device manufactured by the method has low resistance and high transmittance, thereby improving the color changing effect of the electrochromic device.

[0006] To achieve the above object, the present invention adopts the following technical solutions:

[0007] A method for manufacturing an electrochromic device, comprising:

[0008] providing a substrate;

[0009] The first transparent conductive layer is plated on the substrate. Specifically, the first transparent conductive layer is sputtered by sputtering, the ratio of oxygen to argon is controlled to be 1:(50-500), and the coating temperature is room temperature;

[0010] A first electrochromic layer is plated on the first transparent conductive layer. Specifically, the first electrochromic layer is sputtered by sputtering, the ratio of oxygen to argon is controlled to be (1-2):1, and the coating temperature is 200° C. to 400° C.;

[0011] Plating an ion conducting layer on the first electrochromic layer;

[0012] Plating a second electrochromic layer on the ion conducting layer;

[0013] A second transparent conductive layer is deposited on the second electrochromic layer.

[0014] Optionally, when performing sputtering forming of the first transparent conductive layer, the thickness of the first transparent conductive layer is controlled to be 100 mm-500 mm.

[0015] Optionally, when performing sputtering forming of the first transparent conductive layer, the sputtering power is controlled to be 5KW to 10KW, the gas pressure in the sputtering chamber is controlled to be 0.1Pa to 0.9Pa, and the set flow rate of oxygen is controlled to be 2sccm to 6sccm.

[0016] Optionally, when performing sputtering forming of the first electrochromic layer, the sputtering power is controlled to be 20KW to 40KW, and the pressure in the sputtering chamber is controlled to be 2Pa to 4Pa.

[0017] Optionally, in step S100, the specific step of providing the substrate includes: ultrasonically cleaning the substrate and then drying it.

[0018] Optionally, the substrate is transparent glass.

[0019] Optionally, the first transparent conductive layer is an ITO layer, and the first electrochromic layer is a WO layer. x layer.

[0020] Optionally, the room temperature is 25°C.

[0021] The electrochromic device is manufactured by the manufacturing method of the electrochromic device described in any of the above technical solutions.

[0022] Optionally, a protective layer is provided above the second transparent conductive layer of the electrochromic device.

[0023] The beneficial effects of the present invention are:

[0024] The present invention provides a method for manufacturing an electrochromic device. The method adopts a low-oxygen-doped, non-annealed sputtering coating method when forming a first transparent conductive layer, and adopts a heating annealing and oxygen-doped sputtering coating method when coating a first electrochromic layer on the first transparent conductive layer. With such an arrangement, annealing and oxygen-doping of the first transparent conductive layer can be achieved during the forming process of the first electrochromic layer, avoiding the first transparent conductive layer from being superimposedly heated, thereby reducing the square resistance of the first transparent conductive layer, improving the transmittance of the first transparent conductive layer, and thus improving the color-changing effect of the processed electrochromic device. In addition, while improving the performance of the first transparent conductive layer, the method does not need to increase the process, thereby ensuring the production efficiency of the electrochromic device.

[0025] The present invention also provides an electrochromic device, which is manufactured by the above-mentioned manufacturing method of the electrochromic device. The electrochromic device has a good color change speed and color change effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A flow chart of a method for manufacturing an electrochromic device provided in an embodiment of the present invention;

[0027] Figure 2 A schematic diagram of an electrochromic device provided in an embodiment of the present invention.

[0028] In the figure:

[0029] 100, substrate; 200, first transparent conductive layer; 300, first electrochromic layer; 400, ion conductive layer; 500, second electrochromic layer; 600, second transparent conductive layer. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0033] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or are the positions or positional relationships in which the inventive product is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0034] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0035] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0036] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0037] Embodiment 1

[0038] This embodiment provides a method for manufacturing an electrochromic device. The first transparent conductive layer of the electrochromic device manufactured by this method has low resistance and high transmittance, thereby improving the color changing effect.

[0039] Specifically, Figure 1 and Figure 2As shown, the method for manufacturing the electrochromic device includes the following steps:

[0040] S100, providing a substrate 100;

[0041] Optionally, the specific step of providing the substrate 100 includes: cleaning the substrate 100 ultrasonically and then drying it.

[0042] Alternatively, transparent glass may be used as the substrate 100 .

[0043] S200, coating the first transparent conductive layer 200 on the substrate 100, specifically, sputtering the first transparent conductive layer 200 by sputtering, controlling the ratio of oxygen to argon to 1:(50-500), and the coating temperature to be room temperature;

[0044] The sheet resistance of the first transparent conductive layer 200 formed in this step is about (20-30)Ω / square.

[0045] Alternatively, the room temperature may be 25°C.

[0046] S300, coating the first electrochromic layer 300 on the first transparent conductive layer 200, specifically, sputtering the first electrochromic layer 300 by sputtering, controlling the ratio of oxygen to argon to (1-2):1, and the coating temperature to be 200° C.-400° C.;

[0047] After this step, the sheet resistance of the first transparent conductive layer 200 is reduced to (7-15) Ω / square.

[0048] S400, plating an ion conducting layer 400 on the first electrochromic layer 300;

[0049] S500, depositing a second electrochromic layer 500 on the ion conducting layer 400;

[0050] S600 , depositing a second transparent conductive layer 600 on the second electrochromic layer 500 .

[0051] In the method for manufacturing an electrochromic device provided in this embodiment, in step S200, the ratio of oxygen to argon is set to 1:100, and the coating temperature is room temperature, so that the oxygen doping amount of the first transparent conductive layer 200 is low during the sputtering process, and no high temperature is provided. In step S300, the ratio of oxygen to argon is controlled to (1-2):1, and the coating temperature is 200°C-400°C, so that the first electrochromic layer 300 can be reliably sputtered on the first transparent conductive layer 200, and oxygen and high temperature are provided to the first transparent conductive layer 200 in this process, so that the first transparent conductive layer 200 is annealed and oxygen doped during the molding process of the first electrochromic layer 300. In this way, the first transparent conductive layer 200 is avoided from being heated at high temperature twice, and oxygen doped twice, which effectively reduces the square resistance of the first transparent conductive layer 200, and improves the permeability of the first transparent conductive layer 200, thereby improving the color change effect of the processed electrochromic device.

[0052] Experimental verification shows that the square resistance of the first transparent conductive layer 200 of the electrochromic device manufactured by the manufacturing method of the electrochromic device is about (7-15) Ω / square, while the square resistance of the first transparent conductive layer 200 of the electrochromic device manufactured by the traditional process is about (20-30) Ω / square. It can be seen that the color change speed and color change effect of the electrochromic device manufactured by the manufacturing method of the electrochromic device can be significantly improved.

[0053] Optionally, in this embodiment, the first transparent conductive layer 200 is an ITO layer, and the first electrochromic layer 300 is a WO layer. x layer.

[0054] Optionally, when the sputtering forming of the first transparent conductive layer 200 is performed, the thickness of the first transparent conductive layer 200 is controlled to be 100 mm-500 mm.

[0055] Optionally, when performing sputtering molding of the first transparent conductive layer 200 , the sputtering power is controlled to be 5 KW to 10 KW, the gas pressure in the sputtering chamber is controlled to be 0.1 Pa to 0.9 Pa, and the set flow rate of oxygen is controlled to be 2 sccm to 6 sccm.

[0056] Optionally, when performing sputtering molding of the first electrochromic layer 300 , the sputtering power is controlled to be 20 KW to 40 KW, and the pressure in the sputtering chamber is controlled to be 2 Pa to 4 Pa.

[0057] Optionally, the method for manufacturing the electrochromic device can use a continuous line sputtering coating machine to coat the entire film system. The specific steps are:

[0058] Providing a substrate 100: using transparent glass as the base material, after cleaning and drying, putting it into the sputtering chamber of the continuous line sputtering coating machine, and evacuating it.

[0059] The first transparent conductive layer 200 is plated: ITO material is used as a target material to deposit ITO conductive material on the surface of the substrate 100, and a continuous sputtering coating method is selected. Oxygen is used as a reaction gas and argon is used as a working gas. The ratio of oxygen to argon is controlled to be 1: (50-500), the sputtering power is 5KW-10KW, the gas pressure in the sputtering chamber is 0.1Pa-0.9Pa, the set flow rate of oxygen is 2sccm-6sccm, and the thickness of the deposited film is 100mm-500mm.

[0060] The first electrochromic layer 300 is plated by using WO3 as a sputtering target to deposit WO3 material on the surface of the first transparent conductive layer 200, controlling the ratio of oxygen to argon to (1-2):1, the coating temperature to 200°C-400°C, the sputtering power to 20KW-40KW, and controlling the pressure in the sputtering chamber to 2Pa-4Pa.

[0061] The ion conducting layer 400 , the second electrochromic layer 500 , and the second transparent conductive layer 600 are sequentially deposited by continuous sputtering.

[0062] Of course, in other embodiments, the ion conducting layer 400 , the second electrochromic layer 500 and the second transparent conductive layer 600 may also be formed by evaporation.

[0063] Optionally, in this embodiment, the ion conducting layer 400 is an IC layer. The second electrochromic layer 500 is NiWO x Of course, in other embodiments, the ion conducting layer 400 may also be a LiTaO3 layer. The second electrochromic layer 500 may also be a NiO layer.

[0064] Embodiment 2

[0065] This embodiment provides an electrochromic device, such as Figure 2 As shown, the electrochromic device is manufactured using the manufacturing method of the electrochromic device provided in Example 1.

[0066] Since the electrochromic device is manufactured by adopting the manufacturing method of the electrochromic device, the color changing speed and color changing effect are better.

[0067] Optionally, a protective layer is provided above the second transparent conductive layer 600 of the electrochromic device.

[0068] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A method for manufacturing an electrochromic device, characterized in that: include: Providing a substrate (100); A first transparent conductive layer (200) is plated on the substrate (100), specifically, the first transparent conductive layer (200) is sputtered by sputtering, the ratio of oxygen to argon is controlled to be 1:(50-500), and the coating temperature is room temperature; A first electrochromic layer (300) is plated on the first transparent conductive layer (200), specifically, the first electrochromic layer (300) is sputtered by sputtering, the ratio of oxygen to argon is controlled to be (1-2):1, and the coating temperature is 200°C-400°C; Plating an ion conducting layer (400) on the first electrochromic layer (300); Plating a second electrochromic layer (500) on the ion conducting layer (400); A second transparent conductive layer (600) is deposited on the second electrochromic layer (500).

2. The method for manufacturing an electrochromic device according to claim 1, characterized in that: When the sputtering forming of the first transparent conductive layer (200) is performed, the thickness of the first transparent conductive layer (200) is controlled to be 100 mm-500 mm.

3. The method for manufacturing an electrochromic device according to claim 1, characterized in that: When performing sputtering molding of the first transparent conductive layer (200), the sputtering power is controlled to be 5KW to 10KW, the gas pressure in the sputtering chamber is controlled to be 0.1Pa to 0.9Pa, and the set flow rate of oxygen is controlled to be 2sccm to 6sccm.

4. The method for manufacturing an electrochromic device according to claim 1, characterized in that: When performing sputtering molding of the first electrochromic layer (300), the sputtering power is controlled to be 20KW to 40KW, and the pressure in the sputtering chamber is controlled to be 2Pa to 4Pa.

5. The method for manufacturing an electrochromic device according to claim 1, characterized in that: In step S100, the specific step of providing the substrate (100) includes: ultrasonically cleaning the substrate (100) and then drying it.

6. The method for manufacturing an electrochromic device according to claim 1, characterized in that: The substrate (100) is transparent glass.

7. The method for manufacturing an electrochromic device according to claim 1, characterized in that: The first transparent conductive layer (200) is an ITO layer, and the first electrochromic layer (300) is a WO x layer.

8. The method for manufacturing an electrochromic device according to claim 1, characterized in that: The room temperature is 25°C.

9. An electrochromic device, characterized in that The electrochromic device is manufactured by the manufacturing method of any one of claims 1 to 8.

10. The electrochromic device according to claim 9, characterized in that: A protective layer is provided above the second transparent conductive layer (600) of the electrochromic device.

Images