Internal Leakage Detection Method, Detection Device and Control Device for Mass Flow Controller

Abstract

The present disclosure provides a method and a detection device and a control device for detecting internal leakage of a mass flow controller, which can be used for detecting internal leakage of the mass flow controller. The internal leakage detection method includes: first exhausting the intake pipeline and the process chamber including the mass flow controller to be tested, then degassing the sealed space formed by the intake pipeline and the process chamber including the mass flow controller to be tested. After the degassing is completed, the intake device conveys gas to the process chamber through the intake pipeline to perform leakage detection, so as to determine whether there is internal leakage in the mass flow controller to be tested. Compared with the related art, the internal leakage detection method has a simple process, does not affect the semiconductor process, has accurate detection, and can timely repair or replace the mass flow controller detected to have internal leakage, ensuring the accuracy of gas flow control, being more conducive to the subsequent process of semiconductor wafers, and improving the yield.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular, to a method for detecting internal leakage of a mass flow controller, an internal leakage detection device, a control device, and a computer-readable storage medium. Background Art

[0002] In semiconductor manufacturing processes, processes such as thin film deposition, etching, and photoresist stripping are performed on semiconductor wafers. Generally, in the process of implementing the above processes on semiconductor wafers using semiconductor process equipment, the semiconductor wafers to be processed (e.g., wafers) are placed in a closed process chamber, and reaction gases required for the process reaction are provided to enter the process chamber to participate in the reaction.

[0003] A mass flow controller (MFC) is an important part of the gas transmission equipment in thin film deposition technology. It not only has the function of accurately measuring the gas flow rate but also can control the gas flow rate according to user settings. In process production, usually, the intake valve is opened to allow the reaction gas to enter the MFC, and the outlet valve is opened to allow the reaction gas to flow from the MFC to the process chamber.

[0004] Among them, some processes have strict requirements for gas flow rates. Tiny gas flow rate changes have a great impact on the process results. If the amount of gas introduced into the process chamber does not meet expectations, it will lead to abnormal thin film deposition thickness or even product scrapping. When the MFC has internal leakage, it will affect the accuracy of the gas flow rate, thereby affecting the process results and causing a decrease in production yield. Summary of the Invention

[0005] In view of the above-mentioned disadvantages of the related art, the purpose of the present disclosure is to provide a method for detecting internal leakage of a mass flow controller, an internal leakage detection device, a control device, and a computer-readable storage medium, so as to solve various problems in the related art.

[0006] The first aspect of the present disclosure provides a method for detecting internal leakage of a mass flow controller. The mass flow controller is applied to semiconductor process equipment, and the semiconductor process equipment includes a process chamber, at least one intake device, and an exhaust device. Each intake device includes an intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve provided on the intake pipeline. An intake main valve is provided between the multiple intake devices and the process chamber. The exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline. The method for detecting internal leakage of the mass flow controller includes the following steps:

[0007] Open the exhaust valve assembly in the exhaust device, close the gas source valve in one of the intake devices to which the mass flow controller to be tested belongs and open the controller valve, open the main intake valve, and start the exhaust pump so that the process chamber enters the exhaust mode to perform exhaust;

[0008] Close the exhaust valve assembly in the exhaust device, close the gas source valve in one of the intake devices to which the mass flow controller to be tested belongs and open the controller valve, open the main intake valve, so that the process chamber enters the degassing mode to perform degassing; after completing degassing, detect the first pressure P1 of the process chamber;

[0009] Close the exhaust valve assembly in the exhaust device, open the gas source valve in one of the intake devices to which the mass flow controller to be tested belongs and open the controller valve, open the main intake valve, so that the process chamber enters the leak detection mode, and convey the reaction gas from this intake device to the process chamber to perform leak detection, and after a gas supply time, detect the second pressure P2 of the process chamber; and

[0010] Determine whether there is an internal leak in the mass flow controller to be tested according to the detected first pressure P1 and second pressure P2 of the process chamber.

[0011] In some examples of the first aspect, starting the exhaust pump to perform exhaust includes: starting the exhaust pump to exhaust; after a continuous exhaust time, closing the exhaust pump to stop exhaust.

[0012] In some examples of the first aspect, determining whether there is an internal leak in the mass flow controller to be tested according to the detected first pressure P1 and second pressure P2 of the process chamber includes: calculating the leakage rate according to the detected first pressure P1 and second pressure P2 of the process chamber; the leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the gas supply time; comparing the calculated leakage rate with the set leakage threshold, and when the leakage rate is greater than or equal to the leakage threshold, determining that there is an internal leak in the mass flow controller to be tested.

[0013] In some examples of the first aspect, the internal leak detection method further includes: after completing the leak detection, opening the exhaust valve assembly in the exhaust device and starting the exhaust pump to perform exhaust.

[0014] In some examples of the first aspect, the internal leak detection method further includes: repairing or replacing the mass flow controller determined to have an internal leak.

[0015] The second aspect of the present disclosure provides an internal leakage detection device for a mass flow controller, which is applied to a semiconductor process equipment. The semiconductor process equipment includes a process chamber, at least one intake device, and an exhaust device. Each intake device includes an intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve provided on the intake pipeline. An intake main valve is provided between the multiple intake devices and the process chamber. The exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline. The internal leakage detection device for the mass flow controller includes: a gas path control module, a detection module, and a leakage determination module;

[0016] The gas path control module is configured to control the reaction gas source, the gas source valve, the mass flow controller, and the controller valve in each intake device, control the intake main valve, and control the exhaust valve assembly and the exhaust pump in the exhaust device; through the gas path control module, the process chamber can enter an exhaust mode to perform exhaust, or enter a degassing mode to perform degassing, or enter a leakage detection mode to perform leakage detection;

[0017] The detection module is configured to detect the first pressure P1 of the process chamber after degassing is completed and the second pressure P2 of the process chamber after leakage detection;

[0018] The leakage determination module is configured to determine whether there is an internal leakage in the mass flow controller to be tested according to the first pressure P1 and the second pressure P2 of the process chamber detected by the detection module.

[0019] In some examples of the second aspect, the leakage determination module determines whether there is an internal leakage in the mass flow controller to be tested according to the first pressure P1 and the second pressure P2 of the process chamber detected by the detection module, including: calculating a leakage rate according to the detected first pressure P1 and second pressure P2 of the process chamber; the leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the gas supply time; comparing the calculated leakage rate with a set leakage threshold, and when the leakage rate is greater than or equal to the leakage threshold, it is determined that there is an internal leakage in the mass flow controller to be tested.

[0020] In some examples of the second aspect, the detection module is a pressure gauge.

[0021] The third aspect of the present disclosure provides a control device, including: a processor; a memory storing an internal leakage detection program for a mass flow controller; wherein, when the internal leakage detection program for the mass flow controller is run by the processor, it executes the internal leakage detection method for the mass flow controller as described above.

[0022] A fourth aspect of the present disclosure provides a computer-readable storage medium, on which an internal leakage detection program for a mass flow controller is stored. When the internal leakage detection program for the mass flow controller is run by a processor, it executes the internal leakage detection method for the mass flow controller as described above.

[0023] As described above, the embodiments of the present disclosure provide an internal leakage detection method, an internal leakage detection device, and a control device for a mass flow controller, which can be used to detect the internal leakage of the mass flow controller. In the internal leakage detection method, first, the intake pipeline and the process chamber including the mass flow controller to be tested are exhausted, and then the closed space formed by the intake pipeline and the process chamber including the mass flow controller to be tested is degassed. After the degassing is completed, the intake device conveys gas to the process chamber through the intake pipeline to perform leakage detection, so as to determine whether there is internal leakage in the mass flow controller to be tested. Compared with the related art, the internal leakage detection method for the mass flow controller provided by the present disclosure has a simple process, does not affect the semiconductor process, has accurate detection, and can perform timely repair or replacement on the mass flow controller detected to have internal leakage, ensuring the accuracy of gas flow control, being more conducive to the subsequent process of semiconductor wafers, and improving the yield. Description of the Drawings

[0024] Figure 1 It shows a schematic structural diagram of a semiconductor process equipment to which the internal leakage detection method of the mass flow controller of the present disclosure is applied in an embodiment.

[0025] Figure 2 It shows a schematic flow diagram of the internal leakage detection method for the mass flow controller provided by the present disclosure in an embodiment.

[0026] Figures 3 to 5 It shows Figure 1 The semiconductor process equipment in Figure 2 Schematic structural diagrams at different stages according to the method flow of

[0027] Figure 6 It shows a schematic structural diagram of the internal leakage detection device for the mass flow controller in an embodiment.

[0028] Figure 7 It shows a schematic block diagram of the control device provided by the present disclosure in an embodiment. Detailed Embodiments

[0029] The following describes the embodiments of the present disclosure through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed in the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and various details in the present disclosure can also be modified or changed according to different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, without conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0030] The following takes the accompanying drawings as a reference and details the embodiments of the present disclosure so that those skilled in the art to which the present disclosure pertains can easily implement it. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0031] In the description of the present disclosure, the reference terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. mean that the specific features, structures, materials or characteristics represented in connection with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented can be combined in a suitable manner in any one or a group of embodiments or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments or examples represented in the present disclosure and the features of different embodiments or examples.

[0032] In addition, the terms "first" and "second" are only used for the purpose of indication and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" can explicitly or implicitly include at least one of such features. In the description of the present disclosure, the meaning of "a group" is two or more, unless otherwise specifically defined.

[0033] To clearly illustrate the present disclosure, devices irrelevant to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0034] Throughout the specification, when it is said that a device is "connected" to another device, this includes not only the case of "direct connection", but also the case of "indirect connection" with other elements placed therebetween. In addition, when it is said that a certain device "includes" a certain component, unless there is a particularly contrary record, it does not exclude other components, but means that other components can also be included.

[0035] Although in some examples the terms first, second, etc. are used herein to denote various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, the first interface and the second interface, etc. are indicated. Furthermore, as used herein, the singular forms "a", "an", and "the" are also intended to include the plural forms unless the context indicates otherwise. It should be further understood that the terms "comprising", "including" indicate the presence of the stated features, steps, operations, elements, modules, items, kinds, and / or groups, but do not preclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms "or" and "and / or" used herein are to be construed as inclusive, or meaning any one or any combination. Thus, "A, B, or C" or "A, B, and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B, and C". An exception to this definition occurs only when the combination of elements, functions, steps, or operations are inherently mutually exclusive in some way.

[0036] The technical terms used herein are only for referring to specific embodiments and are not intended to limit the present disclosure. The singular forms used herein also include the plural forms as long as the statement does not clearly indicate the contrary meaning. The meaning of "including" used in the specification is to embody specific characteristics, regions, integers, steps, operations, elements, and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.

[0037] Although not defined differently, all terms, including the technical terms and scientific terms used herein, have the same meaning as generally understood by those skilled in the art to which the present disclosure pertains. Terms defined in commonly used dictionaries are additionally interpreted to have a meaning consistent with the relevant technical literature and the currently presented information, and should not be over-interpreted as ideal or overly formulaic meanings as long as they are not defined.

[0038] In the related art involving semiconductor wafer manufacturing processes, a mass flow controller (MFC) not only has the function of accurately measuring the gas flow rate, but also can control the gas flow rate according to the user's settings. If the mass flow controller fails (for example, internal leakage), it will affect the accuracy of the gas flow rate and the quality and yield of subsequent semiconductor processes. Taking the thin film deposition process of semiconductor wafers as an example, the change in gas flow rate has many effects on the thickness and uniformity of the thin film deposition. When the mass flow controller has internal leakage, it will affect the accuracy of the gas flow rate and the quality and yield of the thin film deposition on semiconductor wafers.

[0039] An internal leakage detection method for a mass flow controller provided by an embodiment of the present disclosure is used to detect internal leakage of a mass flow controller applied to semiconductor process equipment, and the semiconductor process equipment is used to perform corresponding process treatments on semiconductor wafers.

[0040] In the following description, taking the semiconductor wafer as a wafer, corresponding processes are implemented for description. A plurality of wafers are arranged on the wafer. The semiconductor process equipment can be, for example, a wafer process equipment, and is used to perform processes such as thin film deposition, etching, and photoresist stripping on the wafer. Taking the thin film deposition process as an example, the thin film deposition process can include PVD (Physical Vapor Deposition), CVD (Chemical Vapor Deposition), etc.

[0041] Please refer to Figure 1 , which shows a schematic structural diagram of a semiconductor process equipment applied to the internal leakage detection method of the mass flow controller of the present disclosure in an embodiment.

[0042] As Figure 1 shown, the semiconductor process equipment in this embodiment can include: a process chamber 10, a wafer carrier 11, at least one intake device, and an exhaust device.

[0043] The process chamber 10 is a chamber suitable for performing thin film deposition on a wafer. Taking a conventional Chemical Vapor Deposition (CVD) as an example, the chemical vapor deposition heats one or more gases (called precursors) to decompose them, generates reaction products, and deposits them on the wafer surface to form a required thin film.

[0044] The process chamber 10 includes a sealed chamber with side walls, and a wafer carrier 11 is arranged in the central area of the sealed chamber.

[0045] A top cover is provided on the upper part of the process chamber 10, and a nozzle or nozzle assembly 101 facing the wafer carrier 11 is provided on the top cover, and is used to spray reaction gas onto the wafer carrier 11.

[0046] The nozzle or nozzle assembly 101 is connected to at least one intake device for delivering reaction gas into the process chamber 10. Each intake device includes an intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve arranged on the intake pipeline. Taking Figure 1For example, the first gas inlet device includes a first gas inlet pipeline and a first reaction gas source GS1, a first gas source valve FV1, a first mass flow controller MFC1, and a first controller valve V1 provided on the first gas inlet pipeline; the second gas inlet device includes a second gas inlet pipeline and a second reaction gas source GS2, a second gas source valve FV2, a second mass flow controller MFC2, and a second controller valve V2 provided on the second gas inlet pipeline;...; the nth gas inlet device includes an nth gas inlet pipeline and an nth reaction gas source GSn, an nth gas source valve FVn, an nth mass flow controller MFCn, and an nth controller valve Vn provided on the nth gas inlet pipeline. Among them, the reaction gases that the reaction gas source can provide include, but are not limited to, silane (SiH4), methane (CH4), ammonia (NH3), oxygen (O2), nitrogen (N2), etc.

[0047] In addition, an inlet main valve is provided between the multi-path gas inlet device and the process chamber, that is, as Figure 1 shown, an inlet main valve Vin is also provided between the multi-path gas inlet device and the showerhead or the showerhead assembly 101.

[0048] An inlet and outlet port may be provided on the side wall of the process chamber 10, and related workpieces can be transferred by using the inlet and outlet port. The workpieces include, but are not limited to, wafers, etc. Generally, a first slit valve is provided at the inlet and outlet port, and the first slit valve can move in the up and down direction or the left and right direction relative to the inlet and outlet port.

[0049] A wafer carrier 11 is provided in the process chamber 10 for carrying the wafer 100. In some embodiments, the thin film deposition process is only performed on one wafer in the process chamber 10 at a time. Therefore, the wafer carrier 11 is located at the central position of the process chamber 10.

[0050] In some embodiments, a wafer adsorption structure for adsorbing the wafer 100 is further provided on the wafer carrier 11. Exemplarily, the wafer adsorption structure may include, for example, an adsorption groove and an adsorption pump.

[0051] In some embodiments, a heating device (not shown in the figure) may be provided below the wafer carrier 11 for heating the carried wafer 100 to make it reach the required temperature. In some embodiments, the side wall surface and the top cover surface of the process chamber 10 may be coated with a high-reflection film or surface polished to reflect the thermal radiation heated by the heating device back to the wafer carrier 11 and the surface of the wafer 100 carried thereon.

[0052] In some embodiments, the wafer carrier 11 may be associated with a rotating device. The rotating device may include a selected rotating member and a rotating power mechanism. The rotating member may be hermetically arranged with the wafer carrier 11 and the process chamber 10. The selected power mechanism can drive the rotating member, the associated wafer carrier 11, and the wafer 100 carried thereon to perform reciprocating rotation, enabling the film deposited on the wafer 100 to be more uniform.

[0053] The exhaust device is used to extract the reaction gas in the process chamber. As Figure 1 shown, the exhaust device includes an exhaust pipeline connected to the process chamber 10 and an exhaust valve assembly and an exhaust pump 14 provided on the exhaust pipeline.

[0054] In some embodiments, the exhaust valve assembly includes an exhaust valve.

[0055] In some embodiments, the exhaust valve assembly includes a combination of an exhaust valve and a throttle valve. Exemplarily, the exhaust valve may be, for example, an ordinary exhaust valve. Exemplarily, the exhaust valve may be, for example, a combination of a quick exhaust valve and a slow exhaust valve. Among them, the slow exhaust valve is used to establish an initial vacuum environment, and the quick exhaust valve is used to more quickly discharge the remaining gas to achieve a lower vacuum degree. The throttle valve may be, for example, a butterfly valve, which can achieve an opening degree of 0% to 100%.

[0056] When depositing a film on a wafer, the wafer can be sent into the process chamber and placed on the wafer carrier, the wafer is heated and kept warm, and the corresponding reaction gas is introduced into the process chamber through the multi-channel gas inlet device to deposit the required film on the surface of the wafer. Among them, in each gas inlet device, the mass flow controller MFC under its respective jurisdiction controls the flow rate of the reaction gas according to the requirements of the film deposition process. If there is an internal leak in the mass flow controller MFC, it will affect the accuracy of the gas flow rate and the result of the film deposition process (for example, the thickness and uniformity of the film deposition), resulting in a decrease in the product yield.

[0057] In view of this, in the embodiments of the present disclosure, a method and device for detecting internal leakage of a mass flow controller, a control device, and a computer-readable storage medium are provided, which can effectively detect whether there is an internal leak in the mass flow controller, repair or replace the mass flow controller with an internal leak, ensure the accuracy of gas flow control, be more beneficial to the subsequent semiconductor wafer manufacturing process, and improve the yield.

[0058] Please refer to Figure 2 , which shows a schematic flow chart of the method for detecting internal leakage of a mass flow controller provided by the present disclosure in an embodiment.

[0059] Step S201, open the exhaust valve assembly in the exhaust device, close the gas source valve in the air intake device belonging to the mass flow controller to be tested and open the controller valve, open the main air intake valve, start the exhaust pump, and put the process chamber into the exhaust mode to implement exhaust.

[0060] Generally, the mass flow rate of gases needs to be precisely controlled in semiconductor process equipment, and different processes require different gas flow ratios. Therefore, each gas requires a corresponding mass flow controller to control the gas flow rate. Specifically, in some embodiments, the semiconductor process equipment may be configured with multiple gas inlet devices, each of which delivers a gas to the process chamber. Therefore, each gas inlet device is configured with a mass flow controller MFC for measuring and controlling the gas transmitted in that gas inlet device.

[0061] Before performing step S201, the mass flow controller MFC to be tested and the air inlet device to which it belongs need to be determined first. After the mass flow controller MFC to be tested is determined, the operation can be performed according to the steps of step S201.

[0062] In addition, before executing the main axis S201, each gas source valve and each controller valve in the other air intake devices described in other mass flow controllers MFC are closed to eliminate the influence of the other air intake devices.

[0063] In step S201, the gas source valve in the gas inlet device to which the mass flow controller to be tested belongs is closed, and the controller valve and the main gas inlet valve are opened, so that the gas inlet pipeline from the gas source valve to the process chamber is connected. The exhaust valve assembly in the exhaust device is opened, and the exhaust pump is started, so that the process chamber enters the exhaust mode to implement exhaust. In this way, through step S201, the gas in the gas inlet pipeline from the gas source valve to the process chamber 10 (including the gas in the mass flow controller) and the gas in the process chamber 10 can be evacuated.

[0064] In some embodiments, when performing exhaust, the gas flow rate of the mass flow controller is controlled to be 0 sccm (standard cubic centimeter per minute).

[0065] In some embodiments, an exhaust time may be set, and the exhaust device exhausts according to the exhaust time. After exhausting continuously and reaching the exhaust time, the exhaust pump is turned off to stop exhausting. Exemplarily, the exhaust time may be, for example, tens of seconds or several minutes, for example, 60 seconds.

[0066] Combination Figure 1, taking the internal leakage detection of the first mass flow controller MFC1 in the first gas inlet device as an example. In step S201, close the first gas source valve FV1 in the first gas inlet device to which the first mass flow controller MFC1 to be tested belongs, open the first controller valve V1, control the gas flow rate of the mass flow controller to 0 sccm, open the total inlet valve Vin, so that a section of the first gas inlet pipe from the first gas source valve FV1 to the process chamber 10 is conducted. In addition, open the exhaust valve assembly 13 in the exhaust device, start the exhaust pump, so that the process chamber 10 enters the exhaust mode to perform exhaust. That is, evacuate the gas in a section of the first gas inlet pipe from the first gas source valve FV1 to the process chamber 10 (including the gas in the first mass flow controller MFC1) and the gas in the process chamber 10 (specifically, refer to Figure 3 ).

[0067] Step S203, close the exhaust valve assembly in the exhaust device, close the gas source valve in the gas inlet device of the mass flow controller to be tested and open the controller valve, open the total inlet valve, so that the process chamber enters the degassing mode to perform degassing; after completing degassing, detect the first pressure P1 of the process chamber.

[0068] In step S203, close the exhaust valve assembly in the exhaust device, close the gas source valve in the gas inlet device of the mass flow controller to be tested, open the controller valve and the total inlet valve, so that the section of the gas inlet pipe from the mass flow controller to be tested to the process chamber is conducted, so that the process chamber enters the degassing mode to perform degassing. In this way, through step S203, degassing can be performed in the closed space formed by the section of the gas inlet pipe from the mass flow controller to the process chamber and the process chamber. After completing degassing, detect the first pressure P1 of the process chamber.

[0069] In some embodiments, when performing degassing, control the gas flow rate of the mass flow controller to 0 sccm.

[0070] In some embodiments, the degassing time can be set, and degassing can be performed according to the degassing time. After continuous degassing and reaching the degassing time, stop degassing and detect the first pressure P1 of the process chamber. Exemplarily, the degassing time can be, for example, dozens of seconds or several minutes, for example, 60 seconds.

[0071] In some embodiments, detecting the first pressure P1 of the process chamber can be achieved by a pressure gauge associated with the process chamber.

[0072] Combined with Figure 1, taking the internal leakage detection of the first mass flow controller MFC1 in the first gas inlet device as an example. In step S203, close the first gas source valve FV1 in the first gas inlet device to which the first mass flow controller MFC1 to be tested belongs, open the first controller valve V1, control the gas flow rate of the mass flow controller to 0 sccm, open the total gas inlet valve Vin, so that a section of the first gas inlet pipe from the first gas source valve FV1 to the process chamber 10 is conducted, close the exhaust valve assembly 13 in the exhaust device, so that a section of the first gas inlet pipe where the first mass flow controller MFC1 is located forms a closed space with the process chamber 10, and thus degasification is carried out in the closed space. After a period of degassing time, stop degassing, and detect the first pressure P1 of the process chamber through the pressure gauge 15 (specifically, refer to Figure 4 ).

[0073] Step S205, close the exhaust valve assembly in the exhaust device, open the gas source valve in one gas inlet device to which the mass flow controller to be tested belongs and open the controller valve, open the total gas inlet valve, so that the process chamber enters the leak detection mode, and a reaction gas is transported from this gas inlet device to the process chamber to carry out leak detection. After a gas supply time, detect the second pressure P2 of the process chamber.

[0074] In step S203, close the exhaust valve assembly in the exhaust device, open the gas source valve in one gas inlet device to which the mass flow controller to be tested belongs, open the controller valve and the total gas inlet valve, so that the gas inlet pipe from the reaction gas source in that gas inlet device to the process chamber is conducted. The process chamber enters the leak detection mode, and a reaction gas is transported from the reaction gas source in that gas inlet device to the process chamber to carry out leak detection. After a gas supply time, detect the second pressure P2 of the process chamber.

[0075] In some embodiments, when implementing gas supply, control the gas flow rate of the mass flow controller to 0 sccm.

[0076] In some embodiments, the gas supply time can be set, and gas can be transported according to the gas supply time. After continuously transporting gas and reaching the gas supply time, stop transporting gas, and detect the second pressure P2 of the process chamber. Exemplarily, the gas supply time can be, for example, dozens of seconds or several minutes, for example, 60 seconds to 100 seconds.

[0077] In some embodiments, detecting the second pressure P2 of the process chamber can be achieved through a pressure gauge associated with the process chamber.

[0078] Combined with Figure 1Taking the internal leakage detection of the first mass flow controller MFC1 in the first gas inlet device as an example, in step S205, the first gas source valve FV1 in the first gas inlet device to which the first mass flow controller MFC1 to be tested belongs is opened, the first controller valve V1 is opened, the gas flow rate of the mass flow controller is controlled to be 0 sccm, the main gas inlet valve Vin is opened, so that the first gas inlet pipeline from the first reaction gas source GS1 to the process chamber 10 is completely connected, the exhaust valve assembly 13 in the exhaust device is closed, and the first reaction gas source GS1 is used to deliver the first reaction gas to the process chamber 10. After a period of gas delivery time, the gas delivery is stopped, and the second pressure P2 of the process chamber is detected by the pressure gauge 15 (for details, please refer to Figure 5 ).

[0079] In certain embodiments, after the leak detection is completed, the exhaust valve assembly in the exhaust device is opened, the exhaust pump is started, and exhaust is performed.

[0080] Step S207 , determining whether the mass flow controller to be tested has internal leakage according to the detected first pressure P1 and second pressure P2 of the process chamber.

[0081] In some embodiments, determining whether the mass flow controller to be tested has an internal leak according to the detected first pressure P1 and second pressure P2 of the process chamber may further include the following steps:

[0082] First, the leakage rate is calculated according to the detected first pressure P1 and second pressure P2 of the process chamber.

[0083] The leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the air supply time, that is, the leakage rate S=(P2-P1) / T, wherein S represents the leakage rate, P1 represents the first pressure, P2 represents the second pressure, and T represents the air supply time.

[0084] Next, the calculated leakage rate is compared with a set leakage threshold, and when the leakage rate is greater than or equal to the leakage threshold, it is determined that the mass flow controller to be tested has internal leakage.

[0085] The leakage threshold may be set according to the requirements of relevant gases involved in the semiconductor process. For example, in some embodiments, the leakage threshold may be set to 4 mTorr / min (mTorr / min) to 6 mTorr / min (mTorr / min), for example, 5 mTorr / min (mTorr / min).

[0086] When the calculated leakage rate S=(P2-P1) / T is greater than or equal to the leakage threshold, it can be determined that the mass flow controller to be tested has internal leakage.

[0087] Subsequently, repair or replace the mass flow controller with internal leakage.

[0088] The present disclosure provides a method for detecting internal leakage of a mass flow controller. First, exhaust the intake pipeline and the process chamber including the mass flow controller to be tested. Then, degas the closed space formed by the intake pipeline and the process chamber including the mass flow controller to be tested. After degassing is completed, the intake device conveys gas to the process chamber through the intake pipeline to perform leakage detection, thereby determining whether the mass flow controller to be tested has internal leakage. Compared with the related art, the method for detecting internal leakage of the mass flow controller provided by the present disclosure has a simple process, does not affect the semiconductor process, has accurate detection, and can promptly repair or replace the mass flow controller detected to have internal leakage, ensuring the accuracy of gas flow control, being more conducive to the subsequent process of semiconductor wafers, and improving the yield.

[0089] Another embodiment of the present disclosure provides a device for detecting internal leakage of a mass flow controller. The mass flow controller is applied to semiconductor process equipment. The semiconductor process equipment includes a process chamber, at least one intake device, and an exhaust device. Each intake device includes an intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve provided on the intake pipeline. An intake main valve is provided between the multiple intake devices and the process chamber. The exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline.

[0090] Please refer to Figure 6 , which shows a schematic structural diagram of the device for detecting internal leakage of a mass flow controller in an embodiment.

[0091] As Figure 6 shown, the device for detecting internal leakage of a mass flow controller provided by the present disclosure includes: a gas path control module 61, a detection module 63, and a leakage determination module 65.

[0092] The gas path control module 61 is configured to control the reaction gas source, the gas source valve, the mass flow controller, and the controller valve in each intake device, control the intake main valve, and control the exhaust valve assembly and the exhaust pump in the exhaust device; through the gas path control module, the process chamber can enter the exhaust mode to perform exhaust, or enter the degassing mode to perform degassing, or enter the leakage detection mode to perform leakage detection.

[0093] The detection module 63 is arranged to detect the first pressure P1 of the process chamber after degassing is completed and the second pressure P2 of the process chamber after leakage detection.

[0094] In some embodiments, the detection module 63 can be implemented as a pressure gauge associated with the process chamber.

[0095] The leakage determination module 65 is configured to determine whether there is an internal leakage in the mass flow controller to be tested according to the first pressure P1 and the second pressure P2 of the process chamber detected by the detection module 63.

[0096] In some embodiments, the leakage determination module 65 calculates a calculated leakage rate based on the first pressure P1 and the second pressure P2 of the process chamber detected by the detection module 63 and compares the leakage rate with a leakage threshold. The leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the gas supply time, that is, the leakage rate S = (P2 - P1) / T, where S represents the leakage rate, P1 represents the first pressure, P2 represents the second pressure, and T represents the gas supply time. When the calculated leakage rate is greater than or equal to the leakage threshold, it can be determined that there is an internal leakage in the mass flow controller to be tested.

[0097] It should be noted that the internal leakage detection device of the mass flow controller provided in the above embodiments and the internal leakage detection method of the mass flow controller provided in the above embodiments belong to the same concept. The specific ways in which each module and unit perform operations have been described in detail in the method embodiments and will not be repeated here. In practical applications, the internal leakage detection device of the mass flow controller provided in the above embodiments can, according to needs, allocate the above functions to different functional modules, that is, divide the internal structure of the system into different functional modules to complete all or part of the functions described above, and this will not be limited here either.

[0098] The present disclosure also provides a control device. In some embodiments, the control device can be, for example, a host computer, and the host computer is connected to at least one intake device, an intake main valve, an exhaust device, etc.

[0099] Please refer to Figure 7 , which shows a schematic block diagram of the control device provided by the present disclosure in an embodiment.

[0100] As Figure 7 shown, the control device 7 includes a processor 71 and a memory 73. Communication can be carried out between the processor 71 and the memory 73 through a bus 72. An internal leakage detection program of the mass flow controller can be stored in the memory 73. The processor 71 executes each step in the internal leakage detection method of the mass flow controller by running the internal leakage detection program in the memory 73.

[0101] The bus 72 can be a Peripheral Component Interconnect (PCI) bus, an Extended Industry Standard Architecture (EISA) bus, or the like. The bus can be divided into an address bus, a data bus, a control bus, etc. For the sake of representation, although only a thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0102] In some embodiments, the processor 71 can be implemented as a Central Processing Unit (CPU), a Micro Controller Unit (MCU), a System on Chip (SoC), or a Field Programmable Gate Array (FPGA), etc. The memory 73 can include volatile memory for temporarily storing data when running a program, such as Random Access Memory (RAM). The memory 73 can also include non-volatile memory (Non-Volatile Memory; NVM) for data storage, such as Read-Only Memory (ROM), flash memory, a Hard Disk Drive (HDD), or a Solid-State Disk (SSD).

[0103] In practical applications, the control device can be associated with at least one intake device, an intake main valve, an exhaust device, etc., and is used to control each component in the intake device, the intake main valve, and each component in the exhaust device, so as to complete the internal leakage detection of the mass flow controller, determine whether there is internal leakage in each mass flow controller, and repair or replace the mass flow controller with internal leakage, ensuring the accuracy of gas flow control, which is more beneficial to the subsequent semiconductor wafer manufacturing process and improves the yield.

[0104] In the embodiments of the present disclosure, a computer-readable storage medium can also be provided, storing a computer program or instructions, and when the computer program or instructions are run, the method flow or function in any of the previous embodiments is implemented.

[0105] That is, the method steps in the above embodiments are implemented as software or computer code that can be stored in a recording medium (such as a CD ROM, RAM, floppy disk, hard disk, or magneto-optical disk), or as computer code that is originally stored in a remote recording medium or a non-transitory machine-readable medium and downloaded through a network and will be stored in a local recording medium, so that the method represented herein can be stored on such a software process on a recording medium using a general-purpose computer, a dedicated processor, or programmable or dedicated hardware (such as an ASIC or FPGA).

[0106] An embodiment of the present disclosure may also provide a computer program product, one or more computer programs or instructions, which when run, wholly or partially execute the processes or functions in the embodiments of the present disclosure. The computer program product includes one or more computer programs or instructions.

[0107] The computer program or instructions can be stored in a readable storage medium, or transmitted from one readable storage medium to another readable storage medium. For example, the computer program or instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The readable storage medium can be any available medium that can be accessed or a data storage device such as a server or a data center integrating one or more available media. The available medium can be a magnetic medium, such as a floppy disk, a hard disk, or a magnetic tape; it can also be an optical medium, such as a digital video disc; or it can be a semiconductor medium, such as a solid-state drive. The computer-readable storage medium can be a volatile or non-volatile storage medium, or can include both volatile and non-volatile types of storage media.

[0108] The above embodiments are only illustrative of the principles and effects of the present disclosure and are not used to limit the present disclosure. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present disclosure should still be covered by the protection scope of the present disclosure.

Claims

1. A method for detecting internal leakage of a mass flow controller, characterized in that: The mass flow controller is applied to semiconductor process equipment, which includes a process chamber, at least one air intake device, and an exhaust device, each of which includes an air intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve, and an air intake main valve is provided between the multi-way air intake device and the process chamber, and the exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump provided on the exhaust pipeline; the internal leakage detection method of the mass flow controller includes the following steps: Open the exhaust valve assembly in the exhaust device, close the gas source valve in the air inlet device of the mass flow controller to be tested and open the controller valve, open the main air inlet valve, start the exhaust pump, and put the process chamber into the exhaust mode to implement exhaust; The exhaust valve assembly in the exhaust device is closed, the gas source valve in the air inlet device belonging to the mass flow controller to be tested is closed and the controller valve is opened, and the main air inlet valve is opened, so that the process chamber enters the degassing mode to implement degassing; after the degassing is completed, the first pressure P1 of the process chamber is detected; The exhaust valve assembly in the exhaust device is closed, the gas source valve in the air intake device belonging to the mass flow controller to be tested is opened, the controller valve is opened, and the main air intake valve is opened, so that the process chamber enters the leakage detection mode, and the reaction gas is delivered to the process chamber by the air intake device to implement the leakage detection, and after a gas delivery time, the second pressure P2 of the process chamber is detected; and According to the detected first pressure P1 and second pressure P2 of the process chamber, determine whether the mass flow controller to be tested has internal leakage: according to the detected first pressure P1 and second pressure P2 of the process chamber, calculate the leakage rate, wherein the leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the gas supply time; compare the calculated leakage rate with the set leakage threshold, and when the leakage rate is greater than or equal to the leakage threshold, determine that the mass flow controller to be tested has internal leakage.

2. The method for detecting internal leakage of a mass flow controller according to claim 1, characterized in that: The starting of the exhaust pump to implement exhaust comprises: Start the exhaust pump to exhaust; After a certain exhaust time, the exhaust pump is turned off to stop exhausting.

3. The method for detecting internal leakage of a mass flow controller according to claim 1, characterized in that: Also includes: After completing the leak detection, open the exhaust valve assembly in the exhaust device, start the exhaust pump, and implement exhaust.

4. The method for detecting internal leakage of a mass flow controller according to claim 1, characterized in that: Also includes: Repair or replace the mass flow controller that is judged to have internal leakage.

5. An internal leakage detection device for a mass flow controller, characterized in that: The mass flow controller is applied to semiconductor process equipment, which includes a process chamber, at least one air intake device, and an exhaust device, each of which includes an air intake pipeline and a reaction gas source, a gas source valve, a mass flow controller, and a controller valve arranged on the air intake pipeline. An air intake main valve is arranged between the multi-way air intake device and the process chamber, and the exhaust device includes an exhaust pipeline and an exhaust valve assembly and an exhaust pump arranged on the exhaust pipeline; the internal leakage detection device of the mass flow controller includes: an air path control module, a detection module, and a leakage determination module; The gas circuit control module is configured to: control the reaction gas source, gas source valve, mass flow controller, and controller valve in each gas inlet device, control the gas inlet main valve, and control the exhaust valve assembly and exhaust pump in the exhaust device; through the gas circuit control module, the process chamber can enter the exhaust mode to implement exhaust, or enter the degassing mode to implement degassing, or enter the leak detection mode to implement leak detection; A detection module, configured to detect a first pressure P1 of the process chamber after degassing is completed and a second pressure P2 of the process chamber after leak detection; The leakage determination module is configured to determine whether the mass flow controller to be tested has an internal leakage according to the first pressure P1 and the second pressure P2 of the process chamber detected by the detection module: calculate the leakage rate according to the detected first pressure P1 and the second pressure P2 of the process chamber, wherein the leakage rate is the ratio of the difference between the second pressure P2 and the first pressure P1 to the gas supply time; compare the calculated leakage rate with the set leakage threshold, and when the leakage rate is greater than or equal to the leakage threshold, determine that the mass flow controller to be tested has an internal leakage.

6. The internal leakage detection device of a mass flow controller according to claim 5, characterized in that: The detection module is a pressure gauge.

7. A control device, characterized in that: include: processor; A memory storing an internal leakage detection program of the mass flow controller; Wherein, when the internal leakage detection program of the mass flow controller is executed by the processor, the internal leakage detection method of the mass flow controller according to any one of claims 1 to 4 is executed.

8. A computer-readable storage medium having stored thereon a program for detecting internal leakage of a mass flow controller, characterized in that: When the internal leakage detection program of the mass flow controller is executed by a processor, the internal leakage detection method of the mass flow controller according to any one of claims 1 to 4 is implemented.

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