Silicon carbide power module testing method, device, electronic device and storage medium

Abstract

Embodiments of the present invention provide a method, device, electronic device, and storage medium for testing a silicon carbide power module, and relate to the field of semiconductor testing technology. The method comprises: performing characteristic parameter detection on a product to be tested to obtain a first characteristic parameter, performing a simulated working condition test on the product to be tested according to a prediction strategy, performing characteristic parameter detection on the product to be tested that has undergone the simulated working condition test to obtain a second characteristic parameter, and comparing the first characteristic parameter and the second characteristic parameter to determine whether the product to be tested is normal. By performing a simulated working condition test on the product to be tested and comparing the characteristic parameters of the product to be tested before and after the test, rapid screening of initial defects of the silicon carbide power module product can be achieved, effectively improving the service stability and reliability of the silicon carbide power module product, and reducing the risk of failure of the product due to initial defects during service.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor testing technology, and in particular to a method, device, electronic equipment and storage medium for testing a silicon carbide power module. Background Art

[0002] With the continuous development of semiconductor technology, silicon carbide, a wide-bandgap semiconductor material, has gradually become a key material for power electronic devices due to its excellent properties such as high thermal conductivity, high breakdown electric field strength, and high saturated electron drift velocity. Applications of silicon carbide materials cover high-voltage power devices, radio frequency devices, and optoelectronic devices.

[0003] During the material growth and wafer manufacturing process, due to the material properties of silicon carbide itself, the lattice structure is difficult to control and is prone to initial defects, resulting in defects in the gate oxide reliability and insulation withstand voltage characteristics of silicon carbide products. Conventional testing cannot expose defective products, causing some products to fail after a period of use, affecting the reliability and life of the product's service life. Summary of the Invention

[0004] In view of this, an object of embodiments of the present invention is to provide a method, apparatus, electronic device, and storage medium for testing a silicon carbide power module to at least partially alleviate the above-mentioned problem.

[0005] In order to achieve the above objectives, the technical solutions adopted in the embodiments of the present invention are as follows:

[0006] In a first aspect, an embodiment of the present invention provides a method for testing a silicon carbide power module, the method comprising:

[0007] Perform characteristic parameter detection on the product to be tested to obtain a first characteristic parameter;

[0008] Performing a simulated working condition test on the product to be tested according to the prediction strategy;

[0009] Performing characteristic parameter testing on the product to be tested that has undergone the simulated working condition test to obtain a second characteristic parameter;

[0010] The first characteristic parameter and the second characteristic parameter are compared to determine whether the product to be tested is normal.

[0011] Optionally, performing a simulated working condition test on the product to be tested according to the prediction strategy includes:

[0012] Performing a high-temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested;

[0013] Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects in the product to be tested;

[0014] A high-temperature withstand voltage blocking characteristic test is performed on the product to be tested, so as to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

[0015] Optionally, the performing a high-temperature gate oxide withstand voltage characteristic test on the product to be tested includes:

[0016] Maintaining the junction temperature of the product to be tested at a first preset temperature;

[0017] Applying a first preset voltage between the gate and source of the product to be tested for a first preset time period;

[0018] A second preset voltage is applied between the gate and the source of the product to be tested for a second preset time period.

[0019] Optionally, the performing a temperature-variable gate oxide switch stress characteristic test on the product to be tested includes:

[0020] Maintaining the junction temperature of the product to be tested within a preset temperature range;

[0021] Alternately applying a third preset voltage and a fourth preset voltage to the product to be tested according to a voltage switching frequency;

[0022] increasing the voltage switching frequency according to a preset frequency increase rate until the voltage switching frequency reaches a first frequency;

[0023] Decelerating and reducing the voltage switching frequency according to a preset frequency until the voltage switching frequency reaches a second frequency;

[0024] The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

[0025] Optionally, the high-temperature withstand voltage blocking characteristic test of the product to be tested includes:

[0026] Maintaining the junction temperature of the product to be tested at a second preset temperature;

[0027] A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

[0028] Optionally, the sixth preset voltage is a rated value of the drain-source blocking voltage of the product to be tested.

[0029] Optionally, the first characteristic parameter and the second characteristic parameter both include a threshold voltage, a drain-source leakage current, and a gate-source leakage current, and comparing the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal includes:

[0030] Calculating a threshold voltage drift, a drain-source leakage current drift, and a gate-source leakage current drift respectively according to the first characteristic parameter and the second characteristic parameter;

[0031] If the threshold voltage drift is less than or equal to a first preset value, the drain-source leakage current drift is less than or equal to a second preset value, and the gate-source leakage current drift is less than or equal to a third preset value, it is determined that the product to be tested is normal;

[0032] If the threshold voltage drift is greater than a first preset value, and / or the drain-source leakage current drift is greater than a second preset value, and / or the gate-source leakage current drift is greater than a third preset value, it is determined that the product to be tested is defective.

[0033] In a second aspect, an embodiment of the present invention provides a silicon carbide power module testing device, comprising:

[0034] The characteristic parameter initial inspection unit is used to perform characteristic parameter inspection on the product to be tested and obtain the first characteristic parameter;

[0035] A simulated working condition test unit, used to perform a simulated working condition test on the product to be tested according to a prediction strategy;

[0036] The characteristic parameter final inspection unit is used to perform characteristic parameter inspection on the product to be tested after the simulated working condition test to obtain the second characteristic parameter;

[0037] The product defect determination unit is configured to compare the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal.

[0038] In a third aspect, an embodiment of the present invention provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor implements any of the above-described methods when executing the program.

[0039] In a fourth aspect, an embodiment of the present invention provides a storage medium having a computer program stored thereon, wherein the computer program implements any of the above-described methods when executed by a processor.

[0040] The embodiments of the present invention provide a method, device, electronic device, and storage medium for testing a silicon carbide power module. By performing a simulated operating condition test on the product to be tested and comparing the characteristic parameters of the product to be tested before and after the test, rapid initial defect screening of the silicon carbide power module product is achieved.

[0041] Furthermore, the embodiments of the present invention can expose the defects of the product to be tested as much as possible through sequential characteristic tests to induce gate oxide defects, accelerate the exposure of gate oxide defects, and stimulate the exposure of abnormal insulation withstand voltage characteristics, thereby effectively improving the service stability and reliability of the silicon carbide power module products that have passed the test, and reducing the risk of failure of the product due to initial defects during the service process.

[0042] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0044] Figure 1 A schematic structural block diagram of an electronic device provided by an embodiment of the present invention;

[0045] Figure 2 A schematic flow chart of a method for testing a silicon carbide power module provided in an embodiment of the present invention;

[0046] Figure 3 Another schematic diagram of a process for testing a silicon carbide power module according to an embodiment of the present invention;

[0047] Figure 4 A relationship diagram between voltage switching frequency and junction temperature for a high-temperature withstand voltage blocking characteristics test provided by an embodiment of the present invention;

[0048] Figure 5 A schematic structural block diagram of a silicon carbide power module testing device provided in an embodiment of the present invention.

[0049] Icons: 100-electronic device; 101-memory; 102-communication interface; 103-processor; 104-communication bus; 300-silicon carbide power module test device; 310-characteristic parameter initial inspection unit; 320-simulated working condition test unit; 330-characteristic parameter final inspection unit; 340-product defect judgment unit. DETAILED DESCRIPTION

[0050] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0051] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0052] It should be noted that similar reference numerals and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are used only to distinguish the description and should not be understood as indicating or implying relative importance.

[0053] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0054] As core components for power energy conversion, power semiconductor devices have been widely used in a variety of key areas, including power systems, high-speed rail, aerospace, and industrial automation. These devices, with their efficient energy conversion capabilities and precise power control characteristics, have become an indispensable part of modern power electronics technology. Power semiconductors can quickly respond to changes in energy demand, efficiently converting energy into the desired electrical form. Their excellent switching performance and frequency response ensure high precision and efficiency in the energy conversion process.

[0055] Silicon carbide devices, with their high electrical and thermal conductivity and wide bandgap, demonstrate exceptional performance advantages in the field of power conversion. These properties enable them to maintain stable operation in high-temperature, high-frequency, and high-voltage environments. Consequently, they are widely used in new energy vehicles, industrial and commercial energy storage systems, and high-efficiency DC / DC converters, gradually replacing traditional silicon-based power devices and becoming a new favorite in the industry.

[0056] However, in the actual application of silicon carbide materials, especially during material growth and wafer manufacturing, the complex crystal structure of silicon carbide easily introduces initial defects into the lattice. These defects directly affect the gate oxide reliability and insulation withstand voltage characteristics of the final product, and thus the overall performance of the silicon carbide power module. Conventional quality inspection methods often fail to identify these potential problems, resulting in some defective products entering the market. These problems only gradually become apparent after a period of actual use, posing a hidden danger to the long-term stable operation of users' corresponding equipment, seriously affecting the reliability and service life of silicon carbide power modules in industrial applications.

[0057] Based on the above situation, an embodiment of the present invention provides a silicon carbide power module testing method, device, electronic device and storage medium. By performing a simulated operating condition test on the silicon carbide power module and then comparing the characteristic parameters of the silicon carbide power module before and after the test, rapid screening of initial defects of the silicon carbide power module product can be achieved, effectively improving the service stability and reliability of the silicon carbide power module product, and reducing the risk of failure of the product due to initial defects during the service process.

[0058] To implement the process steps and functions of each example of the present invention, please refer to Figure 1 , Figure 1 The present invention provides a schematic block diagram of an electronic device 100 according to an embodiment of the present invention. The electronic device 100 may be a dynamic characteristics test system. The electronic device 100 includes a memory 101 and a processor 103. The memory 101 and the processor 103 are electrically connected to each other directly or indirectly to enable data transmission or interaction. For example, these components may be electrically connected to each other via one or more communication buses 104 or signal lines. The memory 101 may be used to store software programs and modules, and the processor 103 executes the software programs and modules stored in the memory 101, thereby performing various functional applications and data processing.

[0059] The electronic device 100 may be, but is not limited to, a personal computer (PC), a server, a distributed computer, or the like. It is understood that the electronic device 100 is not limited to a physical server and may also be a virtual machine on a physical server, a virtual machine built on a cloud platform, or other computer that provides the same functionality as the server or virtual machine. The operating system of the electronic device 100 may be, but is not limited to, Windows, Linux, or the like.

[0060] The memory 101 may be, but is not limited to, a random access memory (RAM), a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), etc.

[0061] The communication connection between the electronic device 100 and an external device is achieved through at least one communication interface 102 (which can be wired or wireless).

[0062] Processor 103 may be an integrated circuit chip with signal processing capabilities. During implementation, each step of the embodiments of the present invention may be completed by hardware integrated logic circuits in processor 103 or by software instructions. Processor 103 may be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0063] I understand. Figure 1 The structure shown is for illustration only. The electronic device 100 may further include Figure 1 More or fewer components than shown, or with Figure 1 Different configurations shown. Figure 1Each component shown in the figure can be implemented by hardware, software or a combination thereof.

[0064] The following is an exemplary description of the silicon carbide power module testing method provided by the embodiment of the present invention. Figure 2 , the execution subject of this method can be the above Figure 1 The electronic device 100 shown in FIG. 1 includes the following steps: Figure 2 The following steps are described:

[0065] S210: Perform characteristic parameter detection on the product to be tested to obtain a first characteristic parameter.

[0066] S220: Performing simulated working condition testing on the product to be tested according to the prediction strategy.

[0067] S230: Perform characteristic parameter detection on the product to be tested that has undergone the simulated working condition test to obtain a second characteristic parameter.

[0068] S240: Compare the first characteristic parameter and the second characteristic parameter to determine whether the product to be tested is normal.

[0069] The product to be tested is a silicon carbide power module product. The silicon carbide power module is a power module made of silicon carbide semiconductor material and has the characteristics of high efficiency, high frequency, high temperature and high voltage. Before the product to be tested is subjected to relevant tests, an initial inspection of its key characteristic parameters is performed to obtain a first characteristic parameter, which is used as a reference value. In order to measure the initial defects of the product to be tested, a simulated working condition test is performed on the product to be tested. Through the simulated working condition test, the operating conditions of the product in actual work can be simulated, so that the defects that may occur in the product during work can be exposed as much as possible. After the product to be tested is subjected to a simulated working condition test, the characteristic parameters of the product to be tested are tested again to obtain a second characteristic parameter. After obtaining the first characteristic parameters and the second characteristic parameters of the product to be tested before and after the test, by comparing the two characteristic parameters, it can be determined whether the product to be tested is normal or whether there are defects.

[0070] This method conducts simulated working condition tests on the product to be tested and compares the characteristic parameters of the product before and after the test, thereby achieving rapid screening of initial defects in silicon carbide power module products, effectively improving the service stability and reliability of silicon carbide power module products, and reducing the risk of failure due to initial defects during the product service process.

[0071] The first characteristic parameter and the second characteristic parameter can be flexibly selected. For example, both include threshold voltage, drain-source leakage current, and gate-source leakage current. Threshold voltage and gate-source leakage current can be used as parameters for subsequent evaluation of gate oxide characteristics of silicon carbide power modules, and drain-source leakage current can be used as a parameter for subsequent evaluation of insulation withstand voltage characteristics of silicon carbide power modules. Based on this, the above step S240 can include the following steps:

[0072] According to the first characteristic parameter and the second characteristic parameter, the threshold voltage drift, the drain-source leakage current drift and the gate-source leakage current drift are calculated respectively.

[0073] The formulas for calculating the threshold voltage drift, drain-source leakage current drift, and gate-source leakage current drift are as follows:

[0074]

[0075] in, Indicates the threshold voltage drift, Drain-source leakage current drift, Gate-source leakage current drift, represents the threshold voltage of the first characteristic parameter, The drain-source leakage current represents the first characteristic parameter, The gate-source leakage current represents the first characteristic parameter, The threshold voltage representing the second characteristic parameter, The drain-source leakage current represents the second characteristic parameter, The gate-source leakage current represents the second characteristic parameter.

[0076] If the threshold voltage drift is less than or equal to the first preset value, the drain-source leakage current drift is less than or equal to the second preset value, and the gate-source leakage current drift is less than or equal to the third preset value, it is determined that the product to be tested is normal.

[0077] If the threshold voltage drift is greater than a first preset value, and / or the drain-source leakage current drift is greater than a second preset value, and / or the gate-source leakage current drift is greater than a third preset value, it is determined that the product to be tested is defective.

[0078] After comparing the first characteristic parameter and the second characteristic parameter, if the threshold voltage drift is less than or equal to the first preset value, the drain-source leakage current drift is less than or equal to the second preset value, and the gate-source leakage current drift is less than or equal to the third preset value, it is determined that the product to be tested is normal, indicating that it does not have an initial defect. For example, when ≤0.1 and ≤10 and When the value is ≤5, the silicon carbide power module's gate oxide characteristic drift and dielectric strength voltage blocking characteristic changes are within normal ranges, and the silicon carbide power module passes the test. If at least one of the threshold voltage drift, drain-source leakage current drift, or gate-source leakage current drift does not meet the requirements, the test indicates that the silicon carbide power module has exposed initial gate oxide defects and dielectric strength abnormalities, and the test fails.

[0079] There are many ways to simulate working conditions on the product to be tested. In order to expose the defects of the product to be tested as much as possible, some characteristic tests can be performed on the product to be tested in a certain order. For example, the product to be tested can be subjected to high temperature gate oxide withstand voltage characteristic test, variable temperature gate oxide switch stress characteristic test and high temperature withstand voltage blocking characteristic test in sequence. Based on this, see Figure 3 , the steps of conducting simulated working condition testing on the product to be tested according to the prediction strategy may include the following steps:

[0080] S221: Performing a high-temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested.

[0081] S222: Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects in the product to be tested.

[0082] S223: Performing a high-temperature withstand voltage blocking characteristic test on the product to be tested, so as to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

[0083] First, a high-temperature gate oxide withstand voltage characteristic test is performed on the product to assess the gate oxide reliability of the product at high temperature and induce gate oxide defects. Then, a variable-temperature gate oxide switching stress characteristic test is performed on the product to simulate the high switching operating frequency conditions under the junction temperature fluctuation conditions during the service of the device, and the gate oxide reliability under variable temperature and variable frequency conditions is tested to accelerate the exposure of gate oxide defects in the product to be tested. Finally, a high-temperature withstand voltage blocking characteristic test is performed on the product to simulate the high-temperature withstand voltage conditions during the operation of the device, and the influence of high temperature and high pressure on the insulation withstand voltage characteristics of the device is evaluated to stimulate the exposure of abnormal insulation withstand voltage characteristics of the product to be tested. By going from high-temperature static withstand voltage to variable-temperature dynamic switching stress, and then to withstand voltage testing under extreme conditions, a test is formed from shallow to deep, from static to dynamic, which can expose the initial defects of the product to be tested as much as possible.

[0084] In S221, there are multiple ways to implement the high-temperature gate oxide withstand voltage characteristic test. In one possible implementation, performing the high-temperature gate oxide withstand voltage characteristic test may include the following steps:

[0085] The junction temperature of the product to be tested is maintained at a first preset temperature.

[0086] A first preset voltage is applied between the gate and source of the product to be tested for a first preset time period.

[0087] A second preset voltage is applied between the gate and source of the product to be tested for a second preset time period.

[0088] Exemplarily, a heating device can be used to maintain the junction temperature of the product to be tested constant at a first preset temperature, such as 150°C. At the same time, a first preset voltage is loaded between the gate and source of the product to be tested for a first preset time, where the first preset voltage is +18V~+20V, and the first preset time is 12h~24h. Then, the temperature range is kept unchanged, and a second preset voltage is loaded between the gate and source of the product to be tested for a second preset time, where the second preset voltage is -10V~-8V, and the second preset time is 12h~24h, to simulate the service condition of the product with high-temperature gate bias, and to use high temperature to induce the exposure of module gate oxygen defects.

[0089] In S222, there are multiple ways to implement the temperature-variable gate oxide switch stress characteristic test. In one possible implementation, it can be implemented by regularly increasing and decreasing the frequency of the switch opening and closing. The temperature-variable gate oxide switch stress characteristic test may include the following steps:

[0090] Maintain the junction temperature of the product under test within a preset temperature range.

[0091] The third preset voltage and the fourth preset voltage are alternately applied to the product to be tested according to the voltage switching frequency.

[0092] The voltage switching frequency is increased according to a preset frequency increasing rate until the voltage switching frequency reaches the first frequency.

[0093] The voltage switching frequency is reduced by deceleration according to a preset frequency until the voltage switching frequency reaches a second frequency.

[0094] The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

[0095] For example, after the product to be tested has undergone a high-temperature gate oxide withstand voltage characteristic test, a heating device is used to maintain the junction temperature of the product to fluctuate within a certain range. The temperature fluctuation range is 60°C~130°C, and the temperature acceleration and deceleration rate is 1°C / s, simulating the junction temperature fluctuation under the service conditions of the product. At the same time, a third preset voltage and a fourth preset voltage are loaded between the gate and source of the product at a certain changing frequency. The initial voltage switching frequency is 50k / s, and the third preset voltage and the fourth preset voltage are +20V / -10V. The voltage switching frequency is increased according to the preset frequency acceleration rate, and the preset frequency acceleration rate is 5k~10k / s until the voltage switching frequency reaches the first frequency of 150k / s. The voltage switching frequency is then reduced according to the preset frequency deceleration rate, and the preset frequency deceleration rate is also 5k~10k / s until the voltage switching frequency reaches the second frequency of 50k / s. According to this rule, the frequency is repeatedly increased and decreased for a third preset time of 12h~24h. The operating conditions of increasing the frequency and temperature of the product during service, and reducing the frequency due to over-temperature are simulated to evaluate the impact of variable temperature and frequency on the gate oxide characteristics, and further use variable temperature and high-frequency stress to stimulate the exposure of gate oxide defects.

[0096] Apply positive and negative voltages of +20V / -10V between the gate and source of the product, with a voltage switching frequency of 50k / s. Then increase the frequency to 150k / s at a rate of 5k~10k / s. Then decrease the frequency from 150k / s to 50k / s at a rate of 5k~10k / s. Continue increasing and decreasing the frequency for 12h~24h to complete the variable temperature gate oxide switch stress characteristic test.

[0097] See also Figure 4 In the high-temperature gate oxide withstand voltage characteristic test, the relationship between the gate-source switching frequency f and the junction temperature T is shown. The gate-source switching frequency increases with the increase of junction temperature and decreases with the decrease of junction temperature. Among them, f1 and f2 are 50k / s and 150k / s, and T1 and T2 are 60℃ and 130℃.

[0098] In S223, performing the high temperature withstand voltage blocking characteristic test may include the following steps:

[0099] The junction temperature of the product to be tested is maintained at a second preset temperature.

[0100] A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

[0101] For example, after the product has been tested for variable temperature and variable frequency characteristics, the equipment is used to maintain the product junction temperature constant at a second preset temperature, which may also be 150°C. A fifth preset voltage is loaded between the gate and source of the product, which is -10V. At the same time, a sixth preset voltage is loaded between the drain and source of the module. The fourth preset test time may be 12h~24h, which completely exposes the initial gate oxide defects of the product.

[0102] The sixth preset voltage may be a rated value of the drain-source blocking voltage of the product to be tested. For example, the drain-source blocking voltage of a silicon carbide power module in a photovoltaic inverter is 650V, and the drain-source blocking voltage of a silicon carbide power module in a charging pile is 1200V.

[0103] Furthermore, the present invention also provides a silicon carbide power module testing device, see Figure 5 , the silicon carbide power module testing device 300 includes:

[0104] The characteristic parameter initial detection unit 310 is used to detect the characteristic parameters of the product to be tested and obtain the first characteristic parameters.

[0105] The simulated working condition test unit 320 is used to perform a simulated working condition test on the product to be tested according to the prediction strategy.

[0106] The characteristic parameter final inspection unit 330 is used to perform characteristic parameter inspection on the product to be tested after the simulated working condition test to obtain a second characteristic parameter.

[0107] The product defect determination unit 340 is configured to compare the first characteristic parameter with the second characteristic parameter to determine whether the product to be tested is normal.

[0108] In summary, the embodiments of the present invention provide a method, device, electronic device and storage medium for testing a silicon carbide power module. By performing a simulated operating condition test on the product to be tested and comparing the characteristic parameters of the product to be tested before and after the test, rapid screening of initial defects of the silicon carbide power module product is achieved. Through sequential characteristic tests, gate oxide defects are induced, gate oxide defect exposure is accelerated, and abnormal insulation withstand voltage characteristics are stimulated for exposure. The defects of the product to be tested can be exposed as much as possible, which can effectively improve the service stability and reliability of the silicon carbide power module products that have passed the test and reduce the risk of failure of the product due to initial defects during service.

[0109] In the embodiments provided by the present invention, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely illustrative. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architectures, functions, and operations of the devices, methods, and computer program products according to multiple embodiments of the present invention. In this regard, each box in the flowchart or block diagram can represent a module, program segment, or part of the code, which contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the boxes can also occur in an order different from that marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, as well as the combination of boxes in the block diagram and / or flowchart, can be implemented using a dedicated hardware-based system that performs the specified functions or actions, or can be implemented using a combination of dedicated hardware and computer instructions.

[0110] In addition, the functional modules in the various embodiments of the present invention may be integrated together to form an independent part, or each module may exist independently, or two or more modules may be integrated to form an independent part.

[0111] If a function is implemented as a software module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the portion that contributes to the prior art, or the portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a computer-readable storage medium and includes several instructions for causing a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the various embodiments of the method of the present invention. The aforementioned storage medium includes various media that can store program code, such as USB flash drives, mobile hard drives, read-only memories (ROMs), random access memories (RAMs), magnetic disks, or optical disks.

[0112] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Those skilled in the art will readily appreciate that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

[0113] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above and that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Therefore, the embodiments should be considered in all respects as illustrative and non-restrictive, and the scope of the invention is defined by the appended claims, not the foregoing description, and all variations within the meaning and range of equivalents of the claims are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim to which it relates.

Claims

1. A method for testing a silicon carbide power module, characterized in that: The method comprises: Perform characteristic parameter detection on the product to be tested to obtain first characteristic parameters; Performing a simulated working condition test on the product to be tested according to the prediction strategy; Performing characteristic parameter testing on the product to be tested that has undergone the simulated working condition test to obtain a second characteristic parameter; Calculating a threshold voltage drift, a drain-source leakage current drift, and a gate-source leakage current drift, respectively, based on the first characteristic parameter and the second characteristic parameter; wherein the first characteristic parameter includes the threshold voltage, the drain-source leakage current, and the gate-source leakage current, and the second characteristic parameter includes the threshold voltage, the drain-source leakage current, and the gate-source leakage current after a simulated operating condition test; If the threshold voltage drift is less than or equal to a first preset value, the drain-source leakage current drift is less than or equal to a second preset value, and the gate-source leakage current drift is less than or equal to a third preset value, it is determined that the product to be tested is normal; If the threshold voltage drift is greater than a first preset value, and / or the drain-source leakage current drift is greater than a second preset value, and / or the gate-source leakage current drift is greater than a third preset value, it is determined that the product to be tested is defective.

2. The method according to claim 1, characterized in that The performing of a simulated working condition test on the product to be tested according to the prediction strategy includes: Performing a high-temperature gate oxide withstand voltage characteristic test on the product to be tested to induce gate oxide defects in the product to be tested; Performing a variable temperature gate oxide switch stress characteristic test on the product to be tested to accelerate the exposure of gate oxide defects in the product to be tested; A high-temperature withstand voltage blocking characteristic test is performed on the product to be tested, so as to stimulate exposure of abnormal insulation withstand voltage characteristics of the product to be tested.

3. The method according to claim 2, characterized in that The high-temperature gate oxide withstand voltage characteristic test of the product to be tested includes: Maintaining the junction temperature of the product to be tested at a first preset temperature; Applying a first preset voltage between the gate and source of the product to be tested for a first preset time period; A second preset voltage is applied between the gate and the source of the product to be tested for a second preset time period.

4. The method according to claim 2, characterized in that The step of performing a temperature-variable gate oxide switch stress characteristic test on the product to be tested includes: Maintaining the junction temperature of the product to be tested within a preset temperature range and fluctuating at a preset temperature increase or decrease rate; Alternately applying a third preset voltage and a fourth preset voltage to the product to be tested according to a voltage switching frequency; increasing the voltage switching frequency according to a preset frequency increase rate until the voltage switching frequency reaches a first frequency; Decelerating and reducing the voltage switching frequency according to a preset frequency until the voltage switching frequency reaches a second frequency; The voltage switching frequency is increased and the voltage switching frequency is decreased repeatedly until the test time reaches a third preset time length.

5. The method according to claim 2, characterized in that The high temperature withstand voltage blocking characteristic test of the product to be tested includes: Maintaining the junction temperature of the product to be tested at a second preset temperature; A fifth preset voltage is applied between the gate and source of the product to be tested, and a sixth preset voltage is applied between the drain and source of the product to be tested for a fourth preset time period.

6. The method according to claim 5, characterized in that The sixth preset voltage is a rated value of the drain-source blocking voltage of the product to be tested.

7. A silicon carbide power module testing device, characterized in that: include: The characteristic parameter initial inspection unit is used to perform characteristic parameter inspection on the product to be tested and obtain the first characteristic parameter; A simulated working condition test unit, used to perform a simulated working condition test on the product to be tested according to a prediction strategy; The characteristic parameter final inspection unit is used to perform characteristic parameter inspection on the product to be tested after the simulated working condition test to obtain the second characteristic parameter; a product defect determination unit, configured to calculate a threshold voltage drift, a drain-source leakage current drift, and a gate-source leakage current drift, respectively, based on the first characteristic parameter and the second characteristic parameter; If the threshold voltage drift is less than or equal to a first preset value, and the drain-source leakage current drift is less than or equal to a second preset value, and the gate-source leakage current drift is less than or equal to a third preset value, it is determined that the product to be tested is normal; if the threshold voltage drift is greater than the first preset value, and / or the drain-source leakage current drift is greater than the second preset value, and / or the gate-source leakage current drift is greater than the third preset value, it is determined that the product to be tested is defective; wherein, the first characteristic parameter includes the threshold voltage, the drain-source leakage current and the gate-source leakage current, and the second characteristic parameter includes the threshold voltage, the drain-source leakage current and the gate-source leakage current after the simulated working condition test.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that: When the processor executes the program, the method according to any one of claims 1 to 6 is implemented.

9. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method according to any one of claims 1 to 6 is implemented.

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