Cleaning process of high-density semiconductor device

Abstract

The invention discloses a cleaning process for a high-density semiconductor device, and aims to overcome the defect that the surface adhesion is reduced due to the fact that scaling powder adhered to the surface of the semiconductor device is difficult to remove and the cleanliness of the surface is affected. The method comprises the following steps: S1, putting a semiconductor device into a cleaning pool, and cleaning to remove oil stains and impurities on the surface of the semiconductor device; s2, putting the semiconductor device into a bubbling pool for cleaning, adding an oily water-based cleaning agent into the bubbling pool, and bubbling while soaking; s3, transferring the semiconductor device into a spraying pool for pure water spraying; s4, performing liquid cutting operation on the semiconductor device to remove surface water marks; and S5, drying the semiconductor device. According to the cleaning process of the high-density semiconductor device, the cleaning effect on the semiconductor device is good, it is guaranteed that scaling powder attached to the interior and the surface of the semiconductor device can be thoroughly removed, and the service life is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor refrigeration technology, and more specifically, to a cleaning process for high-density semiconductor devices. Background Art

[0002] At present, the TEC (Thermal-electric cooler) in the optical module mainly relies on silver glue or other methods to adhere to the heat source to play a cooling role. Therefore, the bonding force between TEC and silver paste needs to be large enough so that TEC can be firmly adsorbed on the surface of the product. In order to increase the bonding force on the surface of the TEC substrate, there are high requirements for the surface cleanliness of the TEC. If the surface is very dirty or there are other abnormalities, it may lead to reduced bonding force. TEC may fall off from the heat source surface during use, and TEC will not be able to play a cooling role, which will eventually reduce the service life of the optical module.

[0003] The TEC production process has to go through a high-temperature reflow process, during which the flux in the solder paste will volatilize, which will result in residual flux in the particles inside the TEC after heating. In addition, after long-term use of the reflow oven, there will be a large amount of fine carbonized flux inside the cavity. These carbonized fluxes will float and adhere to the surface of the TEC under the action of the hot air flow. After the subsequent cooling process, they will eventually adhere to the surface of the TEC and be difficult to remove. These foreign objects attached to the surface of the TEC will affect the cleanliness of the surface, thereby causing a decrease in surface adhesion. Summary of the invention

[0004] In order to overcome the above-mentioned shortcomings, the present invention provides a cleaning process for high-density semiconductor devices, which has a good cleaning effect on semiconductor devices and ensures that the soldering flux inside and attached to the surface of the semiconductor devices can be completely removed, thereby extending the service life.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions: a cleaning process for high-density semiconductor devices, comprising the following steps: S1, the semiconductor device is placed in a cleaning tank for cleaning to remove surface oil and impurities; S2, the semiconductor device is placed in a bubbling tank for cleaning, an oily water-based cleaning agent is added to the bubbling tank, and bubbling is performed while soaking; S3, the semiconductor device is transferred to a spray tank for pure water spraying; S4, the semiconductor device is cut to remove surface water marks; S5, the semiconductor device is dried.

[0006] During the cleaning process of semiconductor devices, they are first placed in a cleaning tank for immersion cleaning to remove oil and impurities on the surface, and then placed in a bubbling tank for immersion. The bubbling tank is filled with an oily water-based cleaning agent, which has a stronger cleaning ability for the block flux on the surface of the semiconductor device. It can not only dissolve the uncarbonized flux inside the semiconductor device, but also clean the carbonized flux attached to the metal surface. After the bubbling cleaning is completed, the semiconductor device is sprayed with pure water to remove the residual cleaning liquid on the surface. Then, the liquid cutting operation is performed to remove the water marks on the semiconductor surface to prevent the surface water stains from affecting the product performance. Finally, the semiconductor device is dried to complete the entire cleaning process.

[0007] The cleaning process of the high-density semiconductor device of the patent application has a good cleaning effect on the semiconductor device, ensuring that the solder flux inside and attached to the surface of the semiconductor device can be completely removed, thereby extending the service life.

[0008] Preferably, the oily water-based cleaning agent contains fatty alcohol polyoxyethylene ether, modified polyoxyethylene ether and 2-amino-2-methyl-1-propanol.

[0009] Ethers mainly have the function of dissolving and emulsifying. It is precisely because this cleaning fluid contains two ethers that this cleaning fluid has a stronger cleaning ability for blocky flux on the surface of the product compared to other cleaning fluids on the market. The main component of flux is rosin, and the main chemical formula of rosin is an organic matter composed of multiple hydroxyl groups. The alcohol substances in this cleaning agent can just form a similar fusion principle with the hydroxyl groups in rosin. Through the interaction of these two components, not only can the uncarbonized flux inside the semiconductor device be dissolved, but the carbonized flux attached to the metal surface can also be cleaned.

[0010] Preferably, trichloroethylene is added to the cleaning tank in S1.

[0011] Trichloroethylene is used as a metal cleaner and degreaser, which can thoroughly remove grease and dirt from metal parts.

[0012] Preferably, in process S1, after the semiconductor device is immersed in the cleaning tank and cleaned, the semiconductor device is transferred to a rinsing tank and rinsed with clean water.

[0013] After rinsing with clean water, the cleaning agent remaining on the surface of the semiconductor device can be removed.

[0014] Preferably, after the semiconductor device is cleaned and rinsed once in S1, another cleaning and rinsing step is performed.

[0015] After two cleaning and rinsing steps, the oil and impurities on the surface of the semiconductor device are removed more thoroughly.

[0016] Preferably, before S2, the moisture on the surface of the semiconductor device is dried.

[0017] Before placing semiconductor devices into the bubbling tank, dry the surface moisture to avoid residual moisture affecting the cleaning effect.

[0018] Preferably, nitrogen is bubbled into the bubbling tank during S2.

[0019] Nitrogen bubbling makes the cleaning liquid in the bubbling tank more uniform, avoiding stratification. In addition, nitrogen bubbling causes the cleaning liquid to vibrate, which is beneficial to improving the cleaning effect of semiconductor devices.

[0020] Preferably, the cleaning liquid in the bubbling tank is stirred during S2.

[0021] The oily water-based cleaning agent is formed by mixing the main liquid and the auxiliary liquid. Due to the different densities of the main liquid and the auxiliary liquid, stratification occurs after standing. By stirring the cleaning liquid in the bubbling tank, the stratification phenomenon can be eliminated and the cleaning effect can be ensured.

[0022] Preferably, in the process S3, a universally rotatable spray head is installed above the spray pool, and the spray head universally rotates to spray the surface of the semiconductor device.

[0023] The universal rotating spray head can realize rotary spraying on the surface of semiconductor devices, ensuring that all positions can be sprayed, improving the spraying effect and avoiding surface residue.

[0024] Preferably, the S4 process uses purified high-pressure air to purge the surface of the semiconductor device to remove liquid.

[0025] The purified high-pressure air blows the surface of the semiconductor device, and the cutting effect is good.

[0026] Compared with the prior art, the present invention has the following beneficial effects: (1) The cleaning process of high-density semiconductor devices in the present patent application has a good cleaning effect on semiconductor devices, ensuring that the flux inside and attached to the surface of the semiconductor devices can be completely removed, thereby extending the service life; (2) Stirring and aerating the semiconductor devices during cleaning to prevent the cleaning agent from stratifying and ensure the cleaning effect; (3) After the semiconductor devices are cleaned, the cleanliness of the substrate surface is increased, which can improve the bonding force between the semiconductor devices and the optical module to ensure their thermoelectric performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a structural diagram of a bubbling pool of the present invention.

[0028] Figure 2 It is a structural diagram of the spray pool of Example 1 of the present invention.

[0029] Figure 3It is a structural diagram of the spray pool of Example 2 of the present invention.

[0030] In the figure: 1. semiconductor device, 2. bubbling pool, 3. support platform, 4. bubbling main pipe, 5. column, 6. bubbling branch pipe, 7. bubbling hole, 8. magnetic stirring seat, 9. turntable, 10. drive motor, 11. magnetic stirring particles, 12. meshing teeth, 13. driving gear, 14. positioning groove, 15. spray pool, 16. spray head, 17. mesh plate, 18. drain pipe, 19. mounting beam, 20. guide rail, 21. guide groove, 22. support bar, 23. flip bar, 24. connecting rod, 25. rack, 26. gear. DETAILED DESCRIPTION

[0031] The technical solution of the present invention is further described in detail below through specific embodiments and in combination with the accompanying drawings: Embodiment 1: A cleaning process for a high-density semiconductor device comprises the following steps: S1, semiconductor device 1 is placed in a cleaning tank for cleaning to remove surface oil and impurities; trichloroethylene is added to the cleaning tank, and the semiconductor device 1 is first immersed in the cleaning tank for a period of time, and then ultrasonically cleaned for a period of time. Trichloroethylene is used as a metal cleaning agent and degreasing agent, which can thoroughly remove grease and dirt on metal parts. After the semiconductor device 1 is immersed in the cleaning tank and cleaned, the semiconductor device 1 is transferred to the rinsing tank and rinsed with clean water, and ultrasonic vibration is used in the rinsing tank for rinsing. After the semiconductor device 1 is cleaned and rinsed once, it is cleaned and rinsed again. After rinsing with clean water, the cleaning agent remaining on the surface of the semiconductor device 1 can be removed. After the semiconductor device 1 is cleaned and rinsed twice, the oil and impurities on the surface are removed more thoroughly. After the two cleaning and rinsing are completed, the moisture on the surface of the semiconductor device 1 is blown dry by cold air.

[0032] S2, the semiconductor device 1 is placed in the bubbling tank 2 for cleaning, an oily water-based cleaning agent is added to the bubbling tank 2, the oily water-based cleaning agent contains fatty alcohol polyoxyethylene ether, modified polyoxyethylene ether and 2-amino-2-methyl-1-propanol, and nitrogen is bubbled into the bubbling tank 2 for bubbling while soaking; nitrogen bubbling makes the cleaning liquid in the bubbling tank 2 more uniform and avoids stratification. In addition, nitrogen bubbling causes the cleaning liquid to vibrate, which is beneficial to improving the cleaning effect of the semiconductor device 1.

[0033] Ethers mainly have the function of dissolving and emulsifying. It is precisely because this cleaning liquid contains two ethers that this cleaning liquid has a stronger cleaning ability for blocky flux on the surface of the product compared with other cleaning liquids on the market. The main component of flux is rosin, and the main chemical formula of rosin is an organic matter composed of multiple hydroxyl groups. The alcohol substances in this cleaning agent can just form a similar fusion principle with the hydroxyl groups in rosin. Through the interaction of these two components, not only can the uncarbonized flux inside the semiconductor device 1 be dissolved, but also the carbonized flux attached to the metal surface can be cleaned.

[0034] During S2, the cleaning liquid in the bubbling pool 2 is stirred. Figure 1 As shown, in this embodiment, a support platform 3 and a bubbling main pipe 4 are installed in the bubbling pool 2, and the semiconductor device 1 is loaded on the support platform 3. A plurality of columns 5 are arranged on the support platform 3, and the columns 5 are supported at the bottom of the bubbling pool 2. The bubbling main pipe 4 is connected to a plurality of circumferentially spaced bubbling branch pipes 6, and the bubbling branch pipes 6 are arranged close to the bottom of the bubbling pool 2. A plurality of bubbling holes 7 are arranged axially at intervals on the bubbling branch pipes 6. The bubbling pool 2 is loaded on a magnetic stirring seat 8, and a turntable 9 and a driving motor 10 are installed on the magnetic stirring seat 8. The driving motor 10 drives the turntable 9 to rotate, and a permanent magnet is installed on the turntable 9. A plurality of magnetic stirring particles 11 are loaded at the bottom of the bubbling pool 2. A circle of meshing teeth 12 is arranged on the edge of the turntable 9, and the output shaft of the driving motor 10 is connected to the driving gear 13, and the driving gear 13 is meshed with the meshing teeth 12 for transmission. A positioning groove 14 adapted to the bubbling pool 2 is arranged on the magnetic stirring seat 8, and the lower end of the bubbling pool 2 is installed in the positioning groove 14. The cleaning agent in the bubbling pool 2 immerses the semiconductor device 1, and the driving motor 10 rotates to drive the turntable 9 to rotate. The permanent magnet rotates with the turntable 9. Under the action of magnetic attraction, the magnetic stirring particles 11 rotate in the bubbling pool 2 to stir the cleaning agent. Nitrogen is introduced through the bubbling main pipe 4 and discharged from the bubbling holes 7 on the bubbling branch pipe 6, thereby forming bubbles in the bubbling pool 2.

[0035] S3, the semiconductor device 1 is transferred to the spray pool 15 for pure water spraying; a universally rotating spray head 16 is installed above the spray pool 15, and the spray head 16 universally rotates to spray the surface of the semiconductor device 1. The universally rotating spray head 16 realizes the rotational spraying of the surface of the semiconductor device 1, ensuring that all positions can be sprayed, improving the spraying effect, and avoiding surface residue. Figure 2As shown, a mesh plate 17 is installed in the spray pool 15, and the semiconductor device 1 is loaded on the mesh plate 17. A drain pipe 18 is installed at the bottom of the spray pool 15. A plurality of sliding mounting beams 19 are installed on the upper part of the spray pool 15, and a plurality of spray heads 16 are installed on the mounting beams 19 at intervals. A guide rail 20 is installed on the upper part of the spray pool 15, and a guide groove 21 is arranged on the guide rail 20. The two ends of the mounting beam 19 are respectively slidably adapted and connected with the guide grooves 21 on the two guide rails 20. A transverse screw and a transverse motor are installed on the upper part of the spray pool 15, and the output shaft of the transverse motor is connected to the transverse screw, and the transverse screw is threadedly connected to the mounting beam 19. The transverse motor drives the transverse screw to rotate, thereby driving the mounting beam 19 to move laterally. A spray pipe is installed on the mounting beam 19, and the spray head 16 on the mounting beam 19 is connected to the same spray pipe, and the spray pipe is connected to a pure water source.

[0036] S4, the semiconductor device 1 is cut to remove water marks on the surface; the surface of the semiconductor device 1 is purged with purified high-pressure air. The cutting process is performed in an automatic cutting machine.

[0037] S5, drying the semiconductor device 1. After the semiconductor device 1 is taken out from the automatic liquid cutting machine, it is transferred to an oven for drying.

[0038] During the cleaning process of semiconductor device 1, it is first placed in a cleaning tank for immersion cleaning to remove oil and impurities on the surface, and then the semiconductor device 1 is placed in a bubbling tank 2 for immersion. The bubbling tank 2 is filled with an oily water-based cleaning agent, which has a stronger cleaning ability for the block flux on the surface of the semiconductor device 1. It can not only dissolve the uncarbonized flux inside the semiconductor device 1, but also clean the carbonized flux attached to the metal surface. After the bubbling cleaning is completed, the semiconductor device 1 is sprayed with pure water to remove the residual cleaning liquid on the surface. Then, the liquid cutting operation is performed to remove the water marks on the surface of the semiconductor to prevent the water stains on the surface from affecting the product performance. Finally, the semiconductor device 1 is dried to complete the entire cleaning process.

[0039] The cleaning process of the high-density semiconductor device 1 of the present patent application has a good cleaning effect on the semiconductor device 1, ensuring that the soldering flux inside and attached to the surface of the semiconductor device 1 can be completely removed, thereby extending the service life.

[0040] Embodiment 2: A cleaning process for high-density semiconductor devices, comprising the following steps: S1, semiconductor device 1 is placed in a cleaning tank for cleaning to remove surface oil and impurities; trichloroethylene is added to the cleaning tank, and the semiconductor device 1 is first immersed in the cleaning tank for a period of time, and then ultrasonically cleaned for a period of time. Trichloroethylene is used as a metal cleaning agent and degreasing agent, which can thoroughly remove grease and dirt on metal parts. After the semiconductor device 1 is immersed in the cleaning tank and cleaned, the semiconductor device 1 is transferred to a rinsing tank and rinsed with clean water, and ultrasonic vibration is used in the rinsing tank for rinsing. After the semiconductor device 1 is cleaned and rinsed once, it is cleaned and rinsed again. After rinsing with clean water, the cleaning agent remaining on the surface of the semiconductor device 1 can be removed. After the semiconductor device 1 is cleaned and rinsed twice, the oil and impurities on the surface are removed more thoroughly. After the two cleaning and rinsing are completed, the moisture on the surface of the semiconductor device 1 is blown dry by cold air.

[0041] S2, the semiconductor device 1 is placed in the bubbling tank 2 for cleaning, an oily water-based cleaning agent is added to the bubbling tank 2, the oily water-based cleaning agent contains fatty alcohol polyoxyethylene ether, modified polyoxyethylene ether and 2-amino-2-methyl-1-propanol, and nitrogen is bubbled into the bubbling tank 2 for bubbling while soaking; nitrogen bubbling makes the cleaning liquid in the bubbling tank 2 more uniform and avoids stratification. In addition, nitrogen bubbling causes the cleaning liquid to vibrate, which is beneficial to improving the cleaning effect of the semiconductor device 1.

[0042] Ethers mainly have the function of dissolving and emulsifying. It is precisely because this cleaning liquid contains two ethers that this cleaning liquid has a stronger cleaning ability for blocky flux on the surface of the product compared with other cleaning liquids on the market. The main component of flux is rosin, and the main chemical formula of rosin is an organic matter composed of multiple hydroxyl groups. The alcohol substances in this cleaning agent can just form a similar fusion principle with the hydroxyl groups in rosin. Through the interaction of these two components, not only can the uncarbonized flux inside the semiconductor device 1 be dissolved, but also the carbonized flux attached to the metal surface can be cleaned.

[0043] During S2, the cleaning liquid in the bubbling pool 2 is stirred. Figure 1As shown, in this embodiment, a support platform 3 and a bubbling main pipe 4 are installed in the bubbling pool 2, and the semiconductor device 1 is loaded on the support platform 3. A plurality of columns 5 are arranged on the support platform 3, and the columns 5 are supported at the bottom of the bubbling pool 2. The bubbling main pipe 4 is connected to a plurality of circumferentially spaced bubbling branch pipes 6, and the bubbling branch pipes 6 are arranged close to the bottom of the bubbling pool 2. A plurality of bubbling holes 7 are arranged axially at intervals on the bubbling branch pipes 6. The bubbling pool 2 is loaded on a magnetic stirring seat 8, and a turntable 9 and a driving motor 10 are installed on the magnetic stirring seat 8. The driving motor 10 drives the turntable 9 to rotate, and a permanent magnet is installed on the turntable 9. A plurality of magnetic stirring particles 11 are loaded at the bottom of the bubbling pool 2. A circle of meshing teeth 12 is arranged on the edge of the turntable 9, and the output shaft of the driving motor 10 is connected to the driving gear 13, and the driving gear 13 is meshed with the meshing teeth 12 for transmission. A positioning groove 14 adapted to the bubbling pool 2 is arranged on the magnetic stirring seat 8, and the lower end of the bubbling pool 2 is installed in the positioning groove 14. The cleaning agent in the bubbling pool 2 immerses the semiconductor device 1, and the driving motor 10 rotates to drive the turntable 9 to rotate. The permanent magnet rotates with the turntable 9. Under the action of magnetic attraction, the magnetic stirring particles 11 rotate in the bubbling pool 2 to stir the cleaning agent. Nitrogen is introduced through the bubbling main pipe 4 and discharged from the bubbling holes 7 on the bubbling branch pipe 6, thereby forming bubbles in the bubbling pool 2.

[0044] S3, the semiconductor device 1 is transferred to the spray pool 15 for pure water spraying; a universally rotating spray head 16 is installed above the spray pool 15, and the spray head 16 universally rotates to spray the surface of the semiconductor device 1. The universally rotating spray head 16 realizes the rotational spraying of the surface of the semiconductor device 1, ensuring that all positions can be sprayed, improving the spraying effect, and avoiding surface residue. Figure 3 As shown, a plurality of spaced support bars 22 are installed in the spray pool 15, all the support bars 22 are arranged side by side to form a curtain plate, the semiconductor device 1 is mounted on the curtain plate, a plurality of spaced flip bars 23 are installed in the spray pool 15, the flip bars 23 are placed between the support bars 22, a plurality of support bars 22 are arranged between two adjacent flip bars 23, and three support bars 22 are arranged between two adjacent flip bars 23 in this embodiment. The flip bars 23 are rotatably installed in the spray pool 15.

[0045] A drainage pipe 18 is installed at the bottom of the spray pool 15, and a plurality of sliding mounting beams 19 are installed on the upper part of the spray pool 15, and a plurality of spray heads 16 are installed on the mounting beams 19 at intervals. A guide rail 20 is installed on the upper part of the spray pool 15, and a guide groove 21 is arranged on the guide rail 20. The two ends of the mounting beam 19 are respectively slidably adapted and connected with the guide grooves 21 on the two guide rails 20. A transverse screw and a transverse motor are installed on the upper part of the spray pool 15, and the output shaft of the transverse motor is connected with the transverse screw, and the transverse screw is threadedly connected with the mounting beam 19. The transverse motor drives the transverse screw to rotate, thereby driving the mounting beam 19 to move laterally. A spray pipe is installed on the mounting beam 19, and the spray heads 16 on the mounting beam 19 are connected with the same spray pipe, and the spray pipe is connected to a pure water source. One end of the mounting beam 19 is connected to a connecting rod 24 extending downward, and the lower end of the connecting rod 24 is connected to a rack 25. A gear 26 is arranged at the end of the flip bar 23, and the rack 25 is adapted to the gear 26. The rack 25 moves with the mounting beam 19. When the rack 25 moves to the position of the gear 26, it can drive the gear 26 to rotate, thereby realizing the rotation of the flip bar 23, and then pushing the semiconductor device 1 supported on the curtain plate to shake up and down, so that each surface of the semiconductor device 1 can be thoroughly sprayed, thereby improving the spraying effect.

[0046] S4, the semiconductor device 1 is cut to remove water marks on the surface; the surface of the semiconductor device 1 is purged with purified high-pressure air. The cutting process is performed in an automatic cutting machine.

[0047] S5, drying the semiconductor device 1. After the semiconductor device 1 is taken out from the automatic liquid cutting machine, it is transferred to an oven for drying.

[0048] During the cleaning process of semiconductor device 1, it is first placed in a cleaning tank for immersion cleaning to remove oil and impurities on the surface, and then the semiconductor device 1 is placed in a bubbling tank 2 for immersion. The bubbling tank 2 is filled with an oily water-based cleaning agent, which has a stronger cleaning ability for the block flux on the surface of the semiconductor device 1. It can not only dissolve the uncarbonized flux inside the semiconductor device 1, but also clean the carbonized flux attached to the metal surface. After the bubbling cleaning is completed, the semiconductor device 1 is sprayed with pure water to remove the residual cleaning liquid on the surface. Then, the liquid cutting operation is performed to remove the water marks on the surface of the semiconductor to prevent the water stains on the surface from affecting the product performance. Finally, the semiconductor device 1 is dried to complete the entire cleaning process.

[0049] The cleaning process of the high-density semiconductor device 1 of the present patent application has a good cleaning effect on the semiconductor device 1, ensuring that the soldering flux inside and attached to the surface of the semiconductor device 1 can be completely removed, thereby extending the service life.

[0050] Comparative Example 1: Take 100 heated semiconductor devices 1 and soak them in a pre-stirred water-based cleaning agent for 20 minutes. No additional operation is performed during this process. After the cleaning is completed, put them in clean water and rinse for 5 minutes. After sufficient rinsing, it is necessary to continue to perform liquid cutting treatment on the surface of the semiconductor device 1 for 10 minutes to prevent water stains on the surface from affecting product performance. After the liquid cutting is completed, it is finally necessary to dry it in a drying oven at 50°C for 10 minutes. After the above processes are completed, the cleaning process ends.

[0051] The specific operation method of Example 1 is as follows: 100 heated semiconductor devices 1 are taken, cleaned with trichloroethylene cleaning agent for 20 minutes, and rinsed with pure water for 5 minutes. After completing the two cleaning and rinsing steps, the surface moisture of the semiconductor device 1 is blown dry by cold air. Then, the semiconductor device 1 is placed in the bubbling pool 2 for cleaning, and an oily water-based cleaning agent is added to the bubbling pool 2. Bubbling is performed while soaking, and the magnetic stirring particles 11 rotate to stir the cleaning agent in the bubbling pool 2. After cleaning for 20 minutes, the semiconductor device 1 is transferred to the screen 17 in the spray pool 15 for pure water spraying treatment. The spray head 16 rotates while spraying, and the mounting beam 19 moves horizontally to make the spray head 16 move horizontally together. After spraying for 10 minutes, the semiconductor device 1 is transferred to the automatic liquid cutting machine for high-pressure air liquid cutting operation to remove surface water marks. After the liquid cutting treatment for 10 minutes, the semiconductor device 1 is transferred to a 50°C oven for drying for 10 minutes. After the above processes are completed, the cleaning process ends.

[0052] The specific operation method of Example 2 is as follows: 100 heated semiconductor devices 1 are taken, cleaned with trichloroethylene cleaning agent for 20 minutes, and rinsed with pure water for 5 minutes. After the two cleaning and rinsing steps, the surface moisture of the semiconductor devices 1 is dried by cold air drying. Then, the semiconductor devices 1 are placed in the bubbling pool 2 for cleaning, and an oily water-based cleaning agent is added to the bubbling pool 2. Bubbling is performed while soaking, and the magnetic stirring particles 11 rotate to stir the cleaning agent in the bubbling pool 2. After cleaning for 20 minutes, the semiconductor devices 1 are transferred to the curtain plate in the spray pool 15 for pure water spraying. The spray head 16 rotates while spraying, and the mounting beam 19 moves horizontally to make the spray head 16 move horizontally together. The rack 25 moves together with the mounting beam 19. When the rack 25 moves to the position of the gear 26, it can drive the gear 26 to rotate, thereby realizing the rotation of the flip bar 23, and then the semiconductor device 1 supported on the curtain plate is pushed up and down, so that each surface of the semiconductor device 1 can be thoroughly sprayed. After spraying for 10 minutes, the semiconductor device 1 is transferred to an automatic cutting machine for high-pressure air cutting to remove surface water marks. After cutting for 10 minutes, the semiconductor device 1 is transferred to a 50°C oven for drying for 10 minutes. After the above processes are completed, the cleaning process ends.

[0053] Cleaning results: Among the 100 products of comparative example 1, 70 had the internal flux cleaned out, 20 still had residual flux inside, 20 had residual carbonized flux on the surface (40 before cleaning), 30 had residual white foreign matter, and the overall qualified rate was 40%.

[0054] Among the 100 products of the specific operation mode of Example 1, the internal flux of 95 pieces was completely cleaned, 5 pieces still had residual flux, 4 pieces had carbonized flux remaining on the surface (there were 50 pieces before cleaning), 0 pieces had white foreign matter remaining, and the overall qualified rate was 95%.

[0055] Among the 100 products of the specific operation mode of Example 2, 96 products had the internal flux completely cleaned, 4 products still had flux residue, 3 products had carbonized flux residue on the surface (there were 50 products before cleaning), 0 products had white foreign matter residue, and the overall qualified rate was 96%.

[0056] It can be seen from the above cleaning results that compared with the traditional cleaning method of Comparative Example 1, the cleaning method of the present application has a better cleaning effect and the cleaning pass rate has been significantly improved.

[0057] The semiconductor device 1 that has passed the cleaning is subjected to an adhesion test, and the experimental conditions are: test speed 100um / s, shear height: 50um. The semiconductor device 1 that has been cleaned is placed under a thrust machine for an adhesion test, and the desired test results are finally obtained. The specific results are shown in the table below.

[0058] Experiments have shown that, compared with the conventional organic solvent-based cleaning process in the comparative example, the surface adhesion of the semiconductor device 1 cleaned by the cleaning method of the present application is increased by 65%, which is a significant improvement, and is very beneficial for the subsequent use of the semiconductor device 1.

[0059] The above-described embodiments are only preferred solutions of the present invention and are not intended to limit the present invention in any form. Other variations and modifications are possible without exceeding the technical solutions described in the claims.

Claims

1. A cleaning process for high-density semiconductor devices, characterized in that: The following steps are involved: S1, semiconductor devices are placed in a cleaning tank for cleaning to remove surface oil and impurities; S2, semiconductor devices are placed in a bubbling tank for cleaning, oily water-based cleaning agents are added to the bubbling tank, and bubbling is performed while soaking; S3, semiconductor devices are transferred to a spray tank for pure water spraying; S4, semiconductor devices are cut to remove surface water marks; S5, semiconductor devices are dried.

2. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: The oily water-based cleaning agent contains fatty alcohol polyoxyethylene ether, modified polyoxyethylene ether and 2-amino-2-methyl-1-propanol.

3. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: Trichloroethylene is added to the cleaning tank in S1.

4. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: In the S1 process, after the semiconductor device is immersed in the cleaning tank and cleaned, the semiconductor device is transferred to the rinsing tank and rinsed with clean water.

5. A cleaning process for a high-density semiconductor device according to claim 4, characterized in that: After the semiconductor device is cleaned and rinsed once in S1, another cleaning and rinsing is performed.

6. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: Before S2, dry the moisture on the surface of the semiconductor device.

7. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: During S2, nitrogen gas was bubbled into the bubbling cell.

8. A cleaning process for a high-density semiconductor device according to claim 1, characterized in that: During S2, the cleaning liquid in the bubbling tank is stirred.

9. A cleaning process for a high-density semiconductor device according to any one of claims 1 to 8, characterized in that: In the S3 process, a universally rotatable spray head is installed above the spray pool, and the spray head universally rotates to spray the surface of the semiconductor device.

10. A cleaning process for a high-density semiconductor device according to any one of claims 1 to 8, characterized in that: The S4 process uses purified high-pressure air to purge the surface of semiconductor devices.

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