Vacuum device and conveying mechanism for double-sided etching of quartz crystal wafer

Abstract

The invention relates to the technical field of wafer etching devices, and discloses a vacuum device and a conveying mechanism for quartz crystal wafer double-sided etching, the vacuum device comprises a vacuum device and a conveying mechanism, and the conveying mechanism is arranged in the vacuum device; the vacuum device comprises an etching machine body, a wafer bracket, a first air inlet pipe, a second air inlet pipe and a vacuumizing module; the conveying mechanism comprises a telescopic vertical rod, a telescopic transverse rod, a supporting rod and a vacuum suction cup. And the control module is configured to control the speed reduction of the telescopic vertical rod when the wafer is placed according to the thickness of the wafer. The vacuum device provided by the invention accurately controls gas flow and gas discharge in the etching process, and ensures that the etching environment is stable and the quality is uniform. The conveying mechanism is combined with a telescopic vertical rod, a cross rod, a supporting rod and a vacuum chuck, so that the stability in the wafer conveying process is ensured, and damage or displacement is prevented. The control module adjusts speed reduction according to the thickness of the wafer to avoid damage during placement. And the etching precision, the equipment reliability and the automation level are improved through integral intelligent control and accurate adjustment.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer etching devices, and in particular to a vacuum device and a conveying mechanism for double-sided etching of a quartz crystal wafer. Background Art

[0002] In the field of semiconductor manufacturing, the processing technology of quartz crystal wafers is crucial. Quartz crystals are widely used in the manufacture of high-frequency oscillators, filters, sensors and other electronic components due to their excellent physical and chemical stability. In order to meet the growing demand for high-performance electronic devices, higher requirements are placed on the processing accuracy and efficiency of quartz crystal wafers.

[0003] The traditional quartz crystal wafer processing method mainly uses single-sided etching technology, but with the development of technology, double-sided etching technology has attracted more and more attention because it can process both sides of the wafer at the same time, significantly improving production efficiency and wafer processing consistency. However, the processed wafers in the existing technology are often damaged and the etching accuracy is low.

[0004] Therefore, it is necessary to provide a vacuum device and a conveying mechanism for double-sided etching of quartz crystal wafers to solve the problems of frequent breakage of processed wafers and low etching accuracy in the prior art. Summary of the invention

[0005] In view of this, the present invention proposes a vacuum device and a conveying mechanism for double-sided etching of quartz crystal wafers, aiming to solve the problems of frequent breakage of processed wafers and low etching accuracy in the prior art.

[0006] The present invention proposes a vacuum device and a conveying mechanism for double-sided etching of a quartz crystal wafer, comprising:

[0007] A vacuum device and a conveying mechanism, wherein the conveying mechanism is arranged in the vacuum device;

[0008] Wherein, the vacuum device comprises an etcher body, a wafer holder, a first air inlet pipe, a second air inlet pipe and a vacuum pumping module; the wafer holder is arranged in the etcher body, the first air inlet pipe is arranged at the top of the etcher body, the second air inlet pipe is arranged at the bottom of the etcher body, the vacuum pumping module is arranged on the etcher body, and the vacuum pumping module is used to extract the plasma gas or volatile products in the etcher body;

[0009] The conveying mechanism comprises a telescopic vertical rod, a telescopic horizontal rod, a support rod and a vacuum suction cup; the telescopic vertical rod is arranged at the top of the etcher body, one end of the telescopic horizontal rod is connected to the end of the telescopic vertical rod away from the etcher body, the other end of the telescopic horizontal rod is connected to the support rod, and a plurality of vacuum suction cups are arranged at the bottom of the support rod;

[0010] The control module is configured to control the deceleration of the telescopic vertical rod when placing the wafer according to the thickness of the wafer.

[0011] Further, the control module is configured to control the deceleration of the telescopic vertical rod when placing the wafer according to the wafer thickness, including:

[0012] Collecting wafer thickness information, and determining whether to adjust the deceleration start time of the telescopic vertical rod according to the wafer thickness information;

[0013] If it is determined to be an adjustment, the start time of deceleration of the telescopic vertical rod is adjusted according to the wafer thickness information.

[0014] Further, judging whether to adjust the start time of deceleration of the telescopic vertical rod according to the wafer thickness information, if it is judged to be adjusted, adjusting the start time of deceleration of the telescopic vertical rod according to the wafer thickness information includes:

[0015] Setting a maximum wafer thickness value, if the wafer thickness information is less than the maximum wafer thickness value, determining not to adjust the deceleration start time of the telescopic vertical rod, if the wafer thickness information is greater than or equal to the maximum wafer thickness value, determining to adjust the deceleration start time of the telescopic vertical rod, calculating the difference between the wafer thickness information and the maximum wafer thickness value, setting a first difference and a second difference, wherein the first difference is less than the second difference;

[0016] If the difference is less than or equal to the first difference, the deceleration start time of the telescopic vertical rod is adjusted by a first adjustment coefficient;

[0017] If the difference is greater than the first difference and less than or equal to the second difference, the deceleration start time of the telescopic vertical rod is adjusted by a second adjustment coefficient;

[0018] If the difference is greater than the second difference, the deceleration start time of the telescopic vertical rod is adjusted by a third adjustment coefficient;

[0019] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the start time of deceleration of the telescopic vertical rod after adjustment is the product of the start time of deceleration of the telescopic vertical rod before adjustment and the adjustment coefficient.

[0020] Furthermore, the vacuum device also includes:

[0021] A temperature controller is arranged at the lower part of the etcher body, and the temperature controller is also located in the cavity formed by the bracket;

[0022] The temperature controller is used to control the temperature inside the etcher body.

[0023] Furthermore, when the temperature controller is used to control the temperature inside the etcher body, it includes:

[0024] Collecting temperature information and temperature change information, and determining whether to adjust the temperature inside the etching machine body according to the temperature information;

[0025] If it is determined to be an adjustment, the temperature inside the etching machine body is adjusted according to the temperature change information.

[0026] Further, judging whether to adjust the temperature inside the etching machine body according to the temperature information, and if it is judged to be adjusted, adjusting the temperature inside the etching machine body according to the temperature change information includes:

[0027] Setting a maximum temperature value, and if the temperature information is less than the maximum temperature value, determining that there is no need to adjust the temperature inside the etching machine body;

[0028] If the temperature information is greater than or equal to the maximum temperature, it is determined that the temperature inside the etching machine body needs to be adjusted;

[0029] Set the collection time, calculate the average unit time temperature change information of the collection time, and calculate the adjustment index according to the temperature information and the average unit time temperature change information by the following formula:

[0030] I = (W-Wy) / Wy+k;

[0031] In the above formula, I represents the adjustment index, W represents the temperature information, Wy represents the maximum temperature, and k represents the average unit time temperature change information influence coefficient, where the value range of k is (0,1);

[0032] Presetting a first adjustment index and a second adjustment index, wherein the first adjustment index is smaller than the second adjustment index;

[0033] If the adjustment index is less than the first adjustment index, adjusting the output temperature of the temperature controller by a first adjustment coefficient;

[0034] If the adjustment index is greater than or equal to the first adjustment index and less than or equal to the second adjustment index, the output temperature of the temperature controller is adjusted by a second adjustment coefficient;

[0035] If the adjustment index is greater than the second adjustment index, adjusting the output temperature of the temperature controller by a third adjustment coefficient;

[0036] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the output temperature of the temperature controller after adjustment is the product of the output temperature of the temperature controller before adjustment and the adjustment coefficient.

[0037] Furthermore, the vacuum device also includes:

[0038] A first gas-distributing plate is horizontally arranged on the upper part of the wafer holder, and an outer side wall of the first gas-distributing plate is connected to an inner side wall of the etcher body;

[0039] The second air-distributing plate is horizontally arranged at the lower part of the wafer bracket, and the outer side wall of the second air-distributing plate is fixed on the wafer bracket.

[0040] Furthermore, the vacuum device also includes:

[0041] At least two limit assemblies are provided, wherein the limit assemblies are provided between the wafer support and the etcher body, one end of the limit assemblies is connected to the etcher body, and the other end of the limit assemblies is fixed to the top of the wafer support.

[0042] Furthermore, the limiting component includes:

[0043] A support plate, one side of which is connected to the inner wall of the etcher body, and the side of the support plate away from the etcher body is connected to the top of the wafer bracket;

[0044] A cylinder, close to the etcher body and fixed on the upper part of the support plate;

[0045] A clamp is fixed to an end of the cylinder away from the etcher body, and the clamp is used to fix the wafer.

[0046] Furthermore, the card component includes:

[0047] A vertical rod is vertically arranged with respect to the output end of the cylinder, and the lower part of the vertical rod abuts against the upper part of the support plate;

[0048] A plurality of cross bars are provided, which are horizontally arranged in sequence on a side of the vertical bar away from the cylinder, and the cross bars are increased in sequence from bottom to top.

[0049] Compared with the prior art, the beneficial effect of the present invention is that the vacuum device of the present invention can accurately control the flow and extraction of gas during etching through the rationally arranged first air inlet pipe, second air inlet pipe and vacuum pumping module, and ensure the effective removal of plasma gas and volatile products, thereby ensuring the stability of the etching environment and the uniformity of etching quality. Secondly, the telescopic vertical rod and telescopic horizontal rod in the transmission mechanism are combined to achieve the precise transmission of wafers. The design of the telescopic horizontal rod can flexibly adjust the position according to different needs, and cooperate with the support rod and vacuum suction cup system to ensure that the wafer remains stable during the transfer process, avoiding damage or displacement of the wafer. In particular, the introduction of the control module can adjust the speed reduction of the telescopic vertical rod according to the thickness of the wafer to prevent uneven etching or wafer breakage due to excessive speed during wafer placement. The intelligent control and precise adjustment of the overall system enable the device to improve the etching accuracy while also improving the reliability and automation level of the equipment, adapting to the needs of high-precision manufacturing, and having good industrial application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Moreover, the same reference symbols are used throughout the accompanying drawings to represent the same components. In the accompanying drawings:

[0051] Figure 1 A cross-sectional view of a vacuum device and a conveying mechanism for double-sided etching of a quartz crystal wafer provided in an embodiment of the present invention.

[0052] In the figure: 100, vacuum device; 110, etcher body; 120, wafer holder; 130, first air inlet pipe; 140, second air inlet pipe; 150, vacuum module; 160, temperature controller; 170, first air uniform plate; 180, second air uniform plate; 190, limit assembly; 191, support plate; 192, cylinder; 193, clamp; 1931, vertical rod; 1932, horizontal rod; 200, conveying mechanism; 210, telescopic vertical rod; 220, telescopic horizontal rod; 230, support rod; 240, vacuum suction cup. DETAILED DESCRIPTION

[0053] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0054] In the description of the present application, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0055] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0056] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be a communication between the inner sides of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0057] In some embodiments of the present application, see Figure 1 As shown, this embodiment provides a vacuum device 100 and a conveying mechanism 200 for double-sided etching of a quartz crystal wafer, including:

[0058] A vacuum device 100 and a conveying mechanism 200, wherein the conveying mechanism 200 is disposed inside the vacuum device 100;

[0059] The vacuum device 100 includes an etcher body 110, a wafer holder 120, a first air inlet pipe 130, a second air inlet pipe 140 and a vacuum module 150; the wafer holder 120 is arranged in the etcher body 110, the first air inlet pipe 130 is arranged at the top of the etcher body 110, the second air inlet pipe 140 is arranged at the bottom of the etcher body 110, and the vacuum module 150 is arranged on the etcher body 110, and the vacuum module 150 is used to extract the plasma gas or volatile products in the etcher body 110;

[0060] The conveying mechanism 200 includes a telescopic vertical rod 210, a telescopic horizontal rod 220, a support rod 230 and a vacuum suction cup 240; the telescopic vertical rod 210 is arranged at the top of the etcher body 110, one end of the telescopic horizontal rod 220 is connected to the end of the telescopic vertical rod 210 away from the etcher body 110, and the other end of the telescopic horizontal rod 220 is connected to the support rod 230, and a plurality of vacuum suction cups 240 are arranged at the bottom of the support rod 230;

[0061] The control module is configured to control the deceleration of the telescopic vertical rod 210 when placing the wafer according to the thickness of the wafer.

[0062] It is understandable that the vacuum device 100 of the present invention can accurately control the flow and extraction of gas during etching through the first air inlet pipe 130, the second air inlet pipe 140 and the vacuum module 150 of the reasonable layout, so as to ensure the effective removal of plasma gas and volatile products, thereby ensuring the stability of the etching environment and the uniformity of the etching quality. Secondly, the telescopic vertical rod 210 and the telescopic cross bar 220 in the conveying mechanism 200 are combined to achieve the precise transmission of the wafer. The design of the telescopic cross bar 220 can flexibly adjust the position according to different needs, and cooperate with the support rod 230 and the vacuum suction cup 240 system to ensure that the wafer remains stable during the transfer process, avoiding damage or displacement of the wafer. In particular, the introduction of the control module can adjust the speed reduction of the telescopic vertical rod 210 according to the thickness of the wafer to prevent the wafer from being damaged due to excessive speed during the wafer placement process. The intelligent control and precise adjustment of the overall system enable the device to improve the etching accuracy while also improving the reliability and automation level of the equipment, adapting to the needs of high-precision manufacturing, and having good industrial application prospects.

[0063] In some embodiments of the present application, the control module is configured to control the deceleration of the telescopic vertical rod 210 when placing the wafer according to the wafer thickness, including:

[0064] Collect wafer thickness information, and determine whether to adjust the deceleration start time of the telescopic vertical rod 210 according to the wafer thickness information;

[0065] If it is determined to be an adjustment, the start time of deceleration of the telescopic vertical rod 210 is adjusted according to the wafer thickness information.

[0066] It is understandable that the thickness of the wafer determines its stability and sensitivity to force during processing to a certain extent. By accurately collecting wafer thickness information and adjusting the deceleration start time accordingly, the uneven force on the wafer caused by thickness differences can be effectively avoided, thereby reducing wafer damage or position displacement caused by excessive deceleration. This targeted control can ensure that the wafer is placed slowly at the most appropriate speed during the placement process to protect its surface from damage, especially during the placement of thicker wafers, to avoid collisions between the wafer and the bracket due to too late deceleration. Secondly, the intelligent deceleration adjustment scheme improves the accuracy of the etching process. Different wafers of different thicknesses require different deceleration modes when placed, and too fast or too slow deceleration may affect the stability of subsequent etching processes. By adjusting the deceleration start time in real time according to the wafer thickness information, more refined operations can be achieved to ensure uniform distribution of temperature and mechanical stress during etching, thereby improving etching quality and wafer consistency. In short, using wafer thickness information to dynamically adjust the start time of speed reduction not only improves the adaptability and intelligence level of the equipment, but also greatly optimizes the wafer protection effect during the etching process and improves the overall processing quality.

[0067] In some embodiments of the present application, whether to adjust the deceleration start time of the telescopic vertical rod 210 is determined according to the wafer thickness information. If it is determined to be adjusted, the deceleration start time of the telescopic vertical rod 210 is adjusted according to the wafer thickness information, including:

[0068] The maximum value of the wafer thickness is set. If the wafer thickness information is less than the maximum value of the wafer thickness, it is determined that the deceleration start time of the telescopic vertical rod 210 is not adjusted. If the wafer thickness information is greater than or equal to the maximum value of the wafer thickness, it is determined that the deceleration start time of the telescopic vertical rod 210 is adjusted. The difference between the wafer thickness information and the maximum value of the wafer thickness is calculated, and a first difference and a second difference are set. The first difference is less than the second difference.

[0069] If the difference is less than or equal to the first difference, the deceleration start time of the telescopic vertical rod 210 is adjusted by the first adjustment coefficient;

[0070] If the difference is greater than the first difference and less than or equal to the second difference, the deceleration start time of the telescopic vertical rod 210 is adjusted by the second adjustment coefficient;

[0071] If the difference is greater than the second difference, the deceleration start time of the telescopic vertical rod 210 is adjusted by the third adjustment coefficient;

[0072] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the speed reduction start time of the telescopic vertical rod 210 after adjustment is the product of the speed reduction start time of the telescopic vertical rod 210 before adjustment and the adjustment coefficient.

[0073] It is understandable that the control module in the present application provides a more accurate wafer transfer control by accurately adjusting the deceleration start time of the telescopic vertical rod 210 according to the wafer thickness information, thereby optimizing the entire processing process. First, by setting the judgment mechanism of the maximum and difference values ​​of the wafer thickness, the system can dynamically adjust the deceleration start time according to the actual thickness of the wafer. Specifically, when the difference is less than the first difference, a smaller adjustment coefficient is used, which means that the deceleration start time of the thinner wafer is adjusted less to avoid over-adjustment; and when the difference is large, a larger adjustment coefficient is used to adjust the deceleration start time of the thicker wafer more significantly, thereby ensuring that the wafer is properly protected during the placement process and avoiding damage or deformation of the wafer caused by too fast placement. In addition, the step-by-step change of the adjustment coefficient (first adjustment coefficient> second adjustment coefficient> 0) provides the system with a multi-level adjustment capability, so that different wafer thicknesses can be processed more finely. This multi-level adjustment not only improves the system's adaptability to wafers of different thicknesses, but also can accurately control the deceleration start time according to the real-time measured data, thereby improving the placement accuracy of the wafer and the consistency of the subsequent etching process. In summary, by calculating the difference between the wafer thickness and the maximum value and introducing a multi-adjustment coefficient mechanism, not only the speed control during the placement process is optimized, but also the etching quality and wafer consistency are improved, and the intelligence and flexibility of the system are enhanced.

[0074] In some embodiments of the present application, the vacuum device 100 further includes:

[0075] The temperature controller 160 is disposed at the lower part of the etcher body 110 , and the temperature controller 160 is also located in the cavity formed by the bracket;

[0076] The temperature controller 160 is used to control the temperature inside the etcher body 110 .

[0077] It is understandable that the design of adding the temperature controller 160 greatly enhances the temperature stability and control accuracy during the etching process. The temperature controller 160 is located in the lower part of the etcher body 110 and in the cavity formed by the bracket. It can directly adjust the temperature in the etcher body 110 to ensure the consistency and uniformity of the temperature during the etching process. Due to the sensitivity of the etching process to temperature, excessively high temperature may lead to uneven etching effects or damage to the wafer surface. Therefore, by accurately controlling the temperature, the etching quality can be improved and the occurrence of errors and defects can be reduced. In addition, the integration of the temperature controller 160 and the vacuum module 150 makes temperature control and airflow management complement each other, effectively improving the stability of the entire etching environment, thereby optimizing the efficiency and results of the overall processing process. This design effectively makes up for the problem of inaccurate temperature regulation in the prior art and provides more reliable support for high-precision double-sided etching.

[0078] In some embodiments of the present application, when the temperature controller 160 is used to control the temperature in the etcher body 110, it includes:

[0079] Collecting temperature information and temperature change information, and determining whether to adjust the temperature in the etcher body 110 according to the temperature information;

[0080] If it is determined to be an adjustment, the temperature inside the etcher body 110 is adjusted according to the temperature change information.

[0081] It is understandable that in some embodiments of the present application, by collecting temperature information and temperature change information and dynamically determining whether to adjust the temperature in the etcher body 110, the intelligence and accuracy of temperature control are greatly improved. Real-time monitoring of temperature changes can identify temperature fluctuations in a timely manner, thereby avoiding the adverse effects of excessive temperature on etching quality. If the temperature deviates from the ideal range, the system can make precise adjustments based on the temperature change information to ensure that the temperature during the etching process is always maintained at an optimal level. This automated temperature regulation not only improves the stability and uniformity of the etching process, but also effectively reduces human intervention and operating errors, reduces the negative impact of temperature fluctuations, and further optimizes processing efficiency and product quality. In addition, this precise temperature control solution provides a more reliable temperature control guarantee for complex double-sided etching processes, which helps to improve the automation level and consistency of the entire production process.

[0082] In some embodiments of the present application, whether to adjust the temperature in the etcher body 110 is determined according to the temperature information. If it is determined to be adjusted, the temperature in the etcher body 110 is adjusted according to the temperature change information, including:

[0083] Setting a maximum temperature value, if the temperature information is less than the maximum temperature value, it is determined that there is no need to adjust the temperature in the etcher body 110;

[0084] If the temperature information is greater than or equal to the maximum temperature, it is determined that the temperature in the etcher body 110 needs to be adjusted;

[0085] Set the collection duration, calculate the average unit time temperature change information during the collection duration, and calculate the adjustment index based on the temperature information and the average unit time temperature change information using the following formula:

[0086] I = (W-Wy) / Wy+k;

[0087] In the above formula, I represents the adjustment index, W represents the temperature information, Wy represents the maximum temperature, and k represents the average unit time temperature change information influence coefficient, where the value range of k is (0,1);

[0088] Presetting a first adjustment index and a second adjustment index, wherein the first adjustment index is smaller than the second adjustment index;

[0089] If the adjustment index is less than the first adjustment index, the output temperature of the temperature controller 160 is adjusted by the first adjustment coefficient;

[0090] If the adjustment index is greater than or equal to the first adjustment index and less than or equal to the second adjustment index, the output temperature of the temperature controller 160 is adjusted by the second adjustment coefficient;

[0091] If the adjustment index is greater than the second adjustment index, the output temperature of the temperature controller 160 is adjusted by the third adjustment coefficient;

[0092] The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the output temperature of the temperature controller 160 after adjustment is the product of the output temperature of the temperature controller 160 before adjustment and the adjustment coefficient.

[0093] It is understandable that in some embodiments of the present application, by introducing an accurate adjustment index and a multi-level adjustment coefficient mechanism, the temperature in the etcher body 110 can be adjusted more intelligently and finely. First, by setting the maximum temperature and calculating the temperature change information, it is possible to determine in real time whether the temperature exceeds the predetermined range and decide whether temperature adjustment is required. This judgment method based on temperature change avoids unnecessary temperature adjustment, reduces unnecessary interference to the system, and thus improves the response efficiency and accuracy of the system. The calculation formula of the adjustment index takes into account the difference between the temperature information and the maximum temperature, and combines the temperature change information per unit time, so that the temperature adjustment is more flexible and dynamic. By setting a plurality of adjustment coefficients and the judgment interval of the adjustment index, different adjustment strategies can be adopted according to different degrees of temperature deviation. For example, in the case of small temperature changes, a smaller adjustment coefficient is used to prevent over-adjustment; and in the case of large temperature fluctuations, a larger adjustment coefficient is used for more significant temperature correction to ensure the stability of the etching environment. This multi-level adjustment and flexible adjustment coefficient not only improve the accuracy of temperature control, but also can respond in time according to real-time temperature fluctuations, avoiding the negative impact of temperature fluctuations on etching quality. By precisely controlling the temperature, the consistency and uniformity of the temperature during the etching process are ensured, thereby improving the etching accuracy, processing efficiency and product quality, and greatly reducing wafer damage or process instability caused by improper temperature.

[0094] In some embodiments of the present application, the vacuum device 100 further includes:

[0095] A first gas-distributing plate 170 is horizontally disposed on the upper portion of the wafer holder 120 , and an outer side wall of the first gas-distributing plate 170 is connected to an inner side wall of the etcher body 110 ;

[0096] The second air homogenizing plate 180 is horizontally disposed at the lower portion of the wafer holder 120 , and the outer side wall of the second air homogenizing plate 180 is fixed on the wafer holder 120 .

[0097] It is understandable that in some embodiments of the present application, the design of adding the first uniform plate 170 and the second uniform plate 180 effectively improves the uniformity of the airflow during the etching process. The first uniform plate 170 is arranged on the upper part of the wafer holder 120 and is connected to the inner side wall of the etcher body 110, which can evenly distribute the airflow above the wafer holder 120 to ensure the stable flow and uniform distribution of the gas inside the etcher. The second uniform plate 180 is arranged at the lower part of the wafer holder 120 and is fixed on the wafer holder 120 to further evenly distribute the airflow from below to avoid local airflow gathering and affect the etching effect. The combined design of these two uniform plates ensures the uniformity of the airflow during the etching process, reduces the uneven etching or deviation caused by uneven airflow, and improves the etching quality and consistency. At the same time, the uniform distribution of the airflow can also effectively control the temperature fluctuation during the etching process, which helps to improve the stability of the process and the processing accuracy of the wafer, and reduce product defects and damage caused by uneven airflow.

[0098] In some embodiments of the present application, the vacuum device 100 further includes:

[0099] At least two limit assemblies 190 are provided, and the limit assemblies 190 are arranged between the wafer holder 120 and the etcher body 110 . One end of the limit assemblies 190 is connected to the etcher body 110 , and the other end of the limit assemblies 190 is fixed to the top of the wafer holder 120 .

[0100] It is understandable that in some embodiments of the present application, a limit assembly 190 is set between the wafer holder 120 and the etcher body 110, which effectively improves the stability and positioning accuracy of the wafer. The design of the limit assembly 190 can prevent the wafer from being offset or unstable during the etching process, thereby ensuring that the wafer is always in a predetermined position inside the etcher. This not only helps to avoid uneven etching caused by wafer offset, but also reduces damage caused by improper movement or vibration, ensuring high precision and consistency during processing. The limit assembly 190 is connected to the etcher body 110 at one end and fixed to the top of the wafer holder 120 at the other end, making the structure more compact and reliable, increasing the durability of the device, and reducing errors or deviations that may occur due to long-term use. On the whole, this design improves the accuracy and stability of the etcher, and enhances the safety and processing quality of the wafer during processing.

[0101] In some embodiments of the present application, the limiting assembly 190 includes:

[0102] A support plate 191, one side of which is connected to the inner wall of the etcher body 110, and a side of the support plate 191 away from the etcher body 110 is connected to the top of the wafer bracket 120;

[0103] The cylinder 192 is close to the etcher body 110 and fixed on the upper part of the support plate 191;

[0104] The clamp 193 is fixed to one end of the cylinder 192 away from the etcher body 110 , and is used to fix the wafer.

[0105] It is understood that in some embodiments of the present application, the limiting assembly 190 further enhances the precise positioning and stability of the wafer bracket 120 through the combined design of the support plate 191, the cylinder 192 and the clamp 193. The support plate 191 is connected to the inner side wall of the etcher body 110, and the side away from the etcher body 110 is fixed to the top of the wafer bracket 120, forming a stable support structure to ensure that the position of the wafer bracket 120 will not shift during the etching process. The setting of the cylinder 192 provides power support, so that the clamp 193 can move, which is convenient for placing the wafer, ensuring that the wafer is always in the correct position, and avoiding the deviation caused by vibration or airflow interference. The clamp 193 is located at one end of the cylinder 192 away from the etcher body 110, which is used to fix the wafer, ensuring that the wafer remains stable and motionless during the entire processing process, and avoiding uneven etching or wafer damage caused by improper fixation. The design of the limit assembly 190 effectively improves the automation level and operating accuracy, reduces the complexity and errors of manual operation, and ensures the high precision and consistency of the etching process, thereby improving product quality and processing efficiency.

[0106] In some embodiments of the present application, the card 193 includes:

[0107] The vertical rod 1931 is vertically arranged with respect to the output end of the cylinder 192, and the lower part of the vertical rod 1931 abuts against the upper part of the support plate 191;

[0108] A plurality of cross bars 1932 are provided, which are horizontally arranged in sequence on the side of the vertical bar 1931 away from the cylinder 192, and the cross bars 1932 are extended in sequence from bottom to top.

[0109] It is understandable that in some embodiments of the present application, the design of the clamp 193 provides a more stable and flexible wafer fixing method through the combination of the vertical rod 1931 and the cross bar 1932. The vertical rod 1931 is vertically arranged at the output end of the cylinder 192 and contacts the upper part of the support plate 191, which can ensure that the clamp 193 remains firm during the etching process and can withstand the weight of the wafer bracket 120 and possible vibration or pressure. The cross bars 1932 are arranged horizontally in sequence and gradually increase in length from bottom to top. This structural design helps to support wafers of various thicknesses and ensure that the clamp 193 fixes the wafer more firmly.

[0110] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A vacuum device and a conveying mechanism for double-sided etching of a quartz crystal wafer, characterized in that: include: A vacuum device and a conveying mechanism, wherein the conveying mechanism is arranged in the vacuum device; Wherein, the vacuum device comprises an etcher body, a wafer holder, a first air inlet pipe, a second air inlet pipe and a vacuum pumping module; the wafer holder is arranged in the etcher body, the first air inlet pipe is arranged at the top of the etcher body, the second air inlet pipe is arranged at the bottom of the etcher body, the vacuum pumping module is arranged on the etcher body, and the vacuum pumping module is used to extract the plasma gas or volatile products in the etcher body; The conveying mechanism comprises a telescopic vertical rod, a telescopic horizontal rod, a support rod and a vacuum suction cup; the telescopic vertical rod is arranged at the top of the etcher body, one end of the telescopic horizontal rod is connected to the end of the telescopic vertical rod away from the etcher body, the other end of the telescopic horizontal rod is connected to the support rod, and a plurality of vacuum suction cups are arranged at the bottom of the support rod; The control module is configured to control the deceleration of the telescopic vertical rod when placing the wafer according to the thickness of the wafer.

2. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 1, characterized in that: The control module is configured to control the deceleration of the telescopic vertical rod when placing the wafer according to the wafer thickness, including: Collecting wafer thickness information, and determining whether to adjust the deceleration start time of the telescopic vertical rod according to the wafer thickness information; If it is determined to be an adjustment, the start time of deceleration of the telescopic vertical rod is adjusted according to the wafer thickness information.

3. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 2, characterized in that: The method of determining whether to adjust the deceleration start time of the telescopic vertical rod according to the wafer thickness information, and if it is determined to be adjusted, adjusting the deceleration start time of the telescopic vertical rod according to the wafer thickness information includes: Setting a maximum wafer thickness value, if the wafer thickness information is less than the maximum wafer thickness value, determining not to adjust the deceleration start time of the telescopic vertical rod, if the wafer thickness information is greater than or equal to the maximum wafer thickness value, determining to adjust the deceleration start time of the telescopic vertical rod, calculating the difference between the wafer thickness information and the maximum wafer thickness value, setting a first difference and a second difference, wherein the first difference is less than the second difference; If the difference is less than or equal to the first difference, the deceleration start time of the telescopic vertical rod is adjusted by a first adjustment coefficient; If the difference is greater than the first difference and less than or equal to the second difference, the deceleration start time of the telescopic vertical rod is adjusted by a second adjustment coefficient; If the difference is greater than the second difference, the deceleration start time of the telescopic vertical rod is adjusted by a third adjustment coefficient; The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the start time of deceleration of the telescopic vertical rod after adjustment is the product of the start time of deceleration of the telescopic vertical rod before adjustment and the adjustment coefficient.

4. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 1, characterized in that: The vacuum device also includes: A temperature controller is arranged at the lower part of the etcher body, and the temperature controller is also located in the cavity formed by the bracket; The temperature controller is used to control the temperature inside the etcher body.

5. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 4, characterized in that: When the temperature controller is used to control the temperature inside the etching machine body, it includes: Collecting temperature information and temperature change information, and determining whether to adjust the temperature inside the etching machine body according to the temperature information; If it is determined to be an adjustment, the temperature inside the etching machine body is adjusted according to the temperature change information.

6. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 5, characterized in that: The method of determining whether to adjust the temperature of the etching machine body according to the temperature information, and if it is determined to be adjusted, adjusting the temperature of the etching machine body according to the temperature change information, includes: Setting a maximum temperature value, and if the temperature information is less than the maximum temperature value, determining that there is no need to adjust the temperature inside the etching machine body; If the temperature information is greater than or equal to the maximum temperature, it is determined that the temperature inside the etching machine body needs to be adjusted; Set the collection time, calculate the average unit time temperature change information of the collection time, and calculate the adjustment index according to the temperature information and the average unit time temperature change information by the following formula: I = (W-Wy) / Wy+k; In the above formula, I represents the adjustment index, W represents the temperature information, Wy represents the maximum temperature, and k represents the average unit time temperature change information influence coefficient, where the value range of k is (0,1); Presetting a first adjustment index and a second adjustment index, wherein the first adjustment index is smaller than the second adjustment index; If the adjustment index is less than the first adjustment index, adjusting the output temperature of the temperature controller by a first adjustment coefficient; If the adjustment index is greater than or equal to the first adjustment index and less than or equal to the second adjustment index, the output temperature of the temperature controller is adjusted by a second adjustment coefficient; If the adjustment index is greater than the second adjustment index, adjusting the output temperature of the temperature controller by a third adjustment coefficient; The value range of the adjustment coefficient is 1>first adjustment coefficient>second adjustment coefficient>0, and the output temperature of the temperature controller after adjustment is the product of the output temperature of the temperature controller before adjustment and the adjustment coefficient.

7. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 6, characterized in that: The vacuum device also includes: A first gas-distributing plate is horizontally arranged on the upper part of the wafer holder, and an outer side wall of the first gas-distributing plate is connected to an inner side wall of the etcher body; The second air-distributing plate is horizontally arranged at the lower part of the wafer bracket, and the outer side wall of the second air-distributing plate is fixed on the wafer bracket.

8. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 7, characterized in that: The vacuum device also includes: At least two limit assemblies are provided, wherein the limit assemblies are provided between the wafer support and the etcher body, one end of the limit assemblies is connected to the etcher body, and the other end of the limit assemblies is fixed to the top of the wafer support.

9. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 8, characterized in that: The limiting component comprises: A support plate, one side of which is connected to the inner wall of the etcher body, and the side of the support plate away from the etcher body is connected to the top of the wafer bracket; A cylinder, close to the etcher body and fixed on the upper part of the support plate; A clamp is fixed to an end of the cylinder away from the etcher body, and the clamp is used to fix the wafer.

10. The vacuum device and conveying mechanism for double-sided etching of quartz crystal wafers according to claim 9, characterized in that: The card comprises: A vertical rod is vertically arranged with respect to the output end of the cylinder, and the lower part of the vertical rod abuts against the upper part of the support plate; A plurality of cross bars are provided, which are horizontally arranged in sequence on a side of the vertical bar away from the cylinder, and the cross bars are increased in sequence from bottom to top.

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