Packaging structure applied to full-bridge power module and three-phase motor control board

Abstract

According to the packaging structure applied to the full-bridge power module and the three-phase motor control board, the pin structure of the full-bridge power module is improved, and the six MOS chips are flatly laid so that the occupied area of a PCB can be reduced; in addition, effective monitoring of parameter states such as voltage and current can be achieved through the first pin, the second pin and the third pin, a fourth MOS chip, a fifth MOS chip and a sixth MOS chip in the lower bridge arm are arranged to be source electrode pins, and therefore voltage crosstalk generated in the circuit switching-on and switching-off processes can be prevented; the source electrodes of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm are also connected with the corresponding power supply negative electrode pins, and then the power supply negative electrode pins are connected through the internal lead, so that the complexity of the lead is reduced, and in addition, the packaging structure is relatively small in size and relatively high in reliability. And the size of the full-bridge power module and the three-phase motor control board can be reduced.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor integrated circuit manufacturing and relates to a packaging structure applied to a full-bridge power module and a three-phase motor control board. Background Art

[0002] Usually, two metal field effect transistors (MOSFET, MOS tube for short) are connected in series (drain and source are short-circuited) to build a half-bridge module in the market, and three half-bridge modules are used to form a three-phase full-bridge as the motor drive circuit to control the motor. The three-phase full-bridge circuit adopts PDFN package and is built with 6 5x6mm MOS single-tube chips, which results in the occupied PCB board area of ​​more than 18x14mm, which is not conducive to the miniaturization of the full-bridge module. In addition, the SMT patch efficiency is low. Since there are many MOS single-tube chips, a lot of time is needed to patch the MOS single-tube chips, which greatly reduces the production efficiency. In order to optimize the above-mentioned problems, the researchers proposed an improved full-bridge packaging module, such as Figure 1 As shown, the full-bridge package module integrates 6 MOS single-tube chips, and the MOS single-tube chips are connected in series and in parallel inside the package, but this type of full-bridge package module still has the following problems: 1) Although the upper tube T1, T2 and T3 chips are connected in parallel with the positive pole of the power supply, as a full-bridge circuit, the negative pole of the power supply is not connected in parallel, and needs to be connected to the negative pole of the power supply separately, thereby increasing the complexity of the lead; 2) In the full-bridge circuit, due to the influence of parasitic inductance, during the opening and closing process of the circuit, the parasitic inductance in the circuit will cause a higher breakdown voltage, resulting in device breakdown or false opening, and the lower tube T4, T5 and T6 chips do not have source drive pins, and cannot prevent voltage crosstalk during the opening and closing process of the circuit; 3) It is impossible to monitor the status of parameters such as voltage and current, and it is impossible to determine whether the full-bridge package module is working properly.

[0003] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology part of the present application. Summary of the invention

[0004] In view of the shortcomings of the prior art mentioned above, the purpose of the present invention is to provide a packaging structure and a three-phase motor control board for a full-bridge power module, which is used to solve the problems in the prior art that the packaging structure of the full-bridge power module is difficult to miniaturize, the leads of the full-bridge power module are complicated, and it is impossible to prevent voltage crosstalk during the circuit opening and closing process and it is impossible to effectively monitor the status of parameters such as voltage and current.

[0005] To achieve the above-mentioned purpose, the present invention provides a packaging structure applied to a full-bridge power module, the packaging structure comprising a substrate, a plurality of pins arranged along the four sides of the substrate, and a first base island, a second base island, a third base island, a fourth base island, a fifth base island and a sixth base island arranged on the substrate, wherein a first MOS chip, a second MOS chip and a third MOS chip are respectively welded on the first base island, the second base island and the third base island, the first MOS chip, the second MOS chip and the third MOS chip constitute an upper bridge arm of the full-bridge packaged power module, and the gate, source and drain of the first MOS chip, the second MOS chip and the third MOS chip are led out to the corresponding pins on the substrate by wire bonding, and are connected to the first MOS chip, The pins corresponding to the drains of the second MOS chip and the third MOS chip are connected through internal leads and then connected to the positive electrode of the power supply. The fourth MOS chip, the fifth MOS chip and the sixth MOS chip are respectively welded on the fourth base island, the fifth base island and the sixth base island. The fourth MOS chip, the fifth MOS chip and the sixth MOS chip constitute the lower bridge arm of the full-bridge packaged power module. The gates and sources of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are led out to the corresponding pins on the substrate through wire bonding, and the sources of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are also connected to the corresponding negative pins of the power supply, and the negative pins of the power supply are connected through internal leads.

[0006] Optionally, the drain of the fourth MOS chip is connected to the U phase and the first pin of the motor, the drain of the fifth MOS chip is connected to the V phase and the second pin of the motor, and the drain of the sixth MOS chip is connected to the W phase and the third pin of the motor, and the current and voltage of the full-bridge packaged power module are monitored through the first pin, the second pin and the third pin.

[0007] Optionally, the source of the first MOS chip is connected to the drain of the fourth MOS chip, the source of the second MOS chip is connected to the drain of the fifth MOS chip, and the source of the third MOS chip is connected to the drain of the sixth MOS chip.

[0008] Optionally, the packaging structure also includes a plurality of connection structures, wherein the connection structures are arranged between the first base island, the second base island and the third base island so that the first base island, the second base island and the third base island are connected in parallel, and the connection structures are also arranged between the fourth base island, the fifth base island and the sixth base island so that the fourth base island, the fifth base island and the sixth base island are connected in parallel.

[0009] Optionally, the connection structure includes any one of a copper sheet, an aluminum strip, a soldered copper wire and a gold wire.

[0010] Optionally, the packaging structure further includes a plastic sealing layer, which covers the substrate so that the first MOS chip, the second MOS chip, the third MOS chip, the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are insulated and isolated from the outside.

[0011] Optionally, the sizes of the first base island, the second base island and the third base island are all equal, and the sizes of the fourth base island, the fifth base island and the sixth base island are all equal.

[0012] Optionally, the sizes of the first MOS chip, the second MOS chip, and the third MOS chip are all equal, and the sizes of the fourth MOS chip, the fifth MOS chip, and the sixth MOS chip are all equal.

[0013] Optionally, the size of the packaging structure is 12mmx14mm.

[0014] The present invention further provides a three-phase motor control board, which includes the above-mentioned packaging structure applied to the full-bridge power module.

[0015] As described above, the packaging structure and three-phase motor control board applied to the full-bridge power module of the present invention have the following beneficial effects:

[0016] The present invention uses the packaging structure to set source pins for the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm of the full-bridge package power module, thereby preventing voltage crosstalk during the process of turning on and off the circuit;

[0017] The present invention uses the packaging structure to connect the source electrodes of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm of the full-bridge packaged power module to the corresponding negative power pins, and then connects the negative power pins through internal leads, thereby reducing the complexity of the leads;

[0018] The present invention uses the packaging structure to lead out the drains of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm of the full-bridge package power module, respectively, thereby realizing effective monitoring of the states of parameters such as voltage and current;

[0019] In addition, the packaging structure proposed by the present invention has a small volume, so that when the packaging structure is subsequently used in full-bridge power modules and the preparation of three-phase motor control boards and other structures, it is beneficial to reduce the volume of full-bridge power modules and three-phase motor control boards. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 The diagram shows a full-bridge package and topology structure diagram after improvement of a typical three-phase full-bridge circuit in the prior art.

[0021] Figure 2 A schematic diagram showing the internal layout of a package structure according to an embodiment of the present invention is shown.

[0022] Figure 3 Shown is a schematic diagram of the topological structure of a packaging structure in an embodiment of the present invention.

[0023] Figure 4 A schematic diagram showing the internal layout of a package structure according to another embodiment of the present invention is shown.

[0024] Figure 5 A schematic diagram showing a topological structure of a packaging structure according to another embodiment of the present invention is shown.

[0025] Description of Figure Numbers

[0026] 10. Substrate; 101. First base island; 102. Second base island; 103. Third base island; 104. Fourth base island; 105. Fifth base island; 106. Sixth base island; 201. First MOS chip; 202. Second MOS chip; 203. Third MOS chip; 204. Fourth MOS chip; 205. Fifth MOS chip; 206. Sixth MOS chip; 301. First pin; 302. Second pin; 303. Third pin. DETAILED DESCRIPTION

[0027] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0028] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic view is only an example, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional space dimensions of length, width and depth should be included.

[0029] For ease of description, spatial relational terms such as “under”, “below”, “below”, “below”, “over”, etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatial relational terms are intended to include other orientations of the device in use or operation in addition to the orientation depicted in the drawings, and may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, so that the first and second features may not be in direct contact. In addition, when a layer is referred to as being “between” two layers, it may be the only layer between the two layers, or one or more intervening layers may also be present.

[0030] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0031] This embodiment provides a packaging structure for a full-bridge power module. Figure 21 is a schematic diagram of the internal layout of the packaging structure, including a substrate 10, a plurality of pins arranged around the substrate 10, and a first base island 101, a second base island 102, a third base island 103, a fourth base island 104, a fifth base island 105 and a sixth base island 106 arranged on the substrate 10, wherein the first base island 101, the second base island 102 and the third base island 103 are respectively welded with a first MOS chip 201, a second MOS chip 202 and a third MOS chip 203, the first MOS chip 201, the second MOS chip 202 and the third MOS chip 203 constitute an upper bridge arm of a full-bridge package power module, and the gate, source and drain of the first MOS chip 201, the second MOS chip 202 and the third MOS chip 203 are led out to the corresponding pins on the substrate 10 in the form of wire bonding, and are connected to the first MOS chip 201, the second MOS chip 202 and the third MOS chip 203. The pins corresponding to the drains of the second MOS chip 202 and the third MOS chip 203 are connected through internal leads and then connected to the positive electrode of the power supply. The fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are respectively welded on the fourth base island 104, the fifth base island 105 and the sixth base island 106. The fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 constitute the lower bridge arm of the full-bridge package power module. The gates and sources of the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are led out to the corresponding pins on the substrate 10 in the form of wire bonding, and the sources of the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are also connected to the corresponding negative pins of the power supply, and the negative pins of the power supply are connected through internal leads.

[0032] Specifically, in the present embodiment, the substrate 10 is used to carry the device. When manufacturing the substrate 10, a bonding material can be used to form a carrier plate, and then the carrier plate is patterned by a mold stamping method or a chemical etching method, so as to form the substrate 10. The substrate 10 is provided with a first base island 101, a second base island 102, a third base island 103, a fourth base island 104, a fifth base island 105 and a sixth base island 106, which are respectively used to place a first MOS chip 201, a second MOS chip 202, a third MOS chip 203, a fourth MOS chip 204, a fifth MOS chip 205 and a sixth MOS chip 206. The shape of the base island can be determined according to the size of the MOS tube placed.

[0033] Specifically, in this embodiment, the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are respectively soldered to the first base island 101, the second base island 102, the third base island 103, the fourth base island 104, the fifth base island 105 and the sixth base island 106 using high-temperature solder paste through a reflow soldering process. The solder paste can also be replaced with at least one of gold paste, silver paste, lead paste or indium paste, or other suitable welding materials, so that each base island can be firmly combined with the corresponding MOS chip to improve the reliability of the formed packaging structure. Then the source, drain and gate of the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are connected to the corresponding pins, such as Figure 2 As shown, the source, drain and gate are led out. Optionally, the corresponding pins are made of copper, aluminum, silver, gold, titanium, platinum, nickel or other suitable conductive materials. Preferably, the corresponding pins are made of copper pins.

[0034] Specifically, Figure 2 and Figure 3 As shown, in this embodiment, the gate, source and drain of the first MOS chip 201, the second MOS chip 202 and the third MOS chip 203 are led out to the corresponding pins on the substrate 10 by wire bonding. For example, the source S, drain D and gate G of the first MOS chip 201 are respectively wired out to the corresponding S1 pin, D1 pin and G1 pin on the substrate 10. Similarly, the source S, drain D and gate G of the second MOS chip 202 are respectively wired out to the corresponding S2 pin, D2 pin and G2 pin on the substrate 10. The source S, drain D and gate G of the third MOS chip 203 are respectively wired out to the corresponding S3 pin, D3 pin and G3 pin on the substrate 10. Exemplarily, the wire bonding material can be gold copper wire or aluminum wire, such as Figure 3 As shown, the drain D1 pin of the first MOS chip 201, the drain D2 pin of the second MOS chip 202 and the drain D2 pin of the third MOS chip 203 are first electrically connected through internal leads and then connected to the positive electrode of the power supply.

[0035] Specifically, Figure 2 and Figure 3As shown, in this embodiment, the gates and sources of the fourth MOS chip 204, the fifth MOS chip 205, and the sixth MOS chip 206 are led out to the corresponding pins on the substrate 10 by wire bonding. For example, the source S and the gate G of the fourth MOS chip 204 are respectively wired out to the corresponding S4 pin and G4 pin on the substrate 10. Similarly, the source S and the gate G of the fifth MOS chip 205 are respectively wired out to the corresponding S5 pin and G5 pin on the substrate 10. The source S and the gate G of the sixth MOS chip 206 are respectively wired out to the corresponding S6 pin and G6 pin on the substrate 10. Similarly, the wire bonding material can be gold copper wire or aluminum wire. Further, as shown in FIG. Figure 3 As shown, the source S of the fourth MOS chip 204, the source S of the fifth MOS chip 205, and the source S of the sixth MOS chip 206 are respectively connected to the corresponding negative power supply pins, and then the negative power supply pins are connected through internal leads. Compared with the prior art, there is no need to lead out the negative power supply leads separately, thereby reducing the complexity of the leads in the packaging structure.

[0036] In other embodiments, Figure 4 and Figure 5 As shown, a first pin 301, a second pin 302 and a third pin 303 are also provided around the substrate 10, wherein the first pin 301 is connected to the drain D of the fourth MOS chip 204, the second pin 302 is connected to the drain D of the fifth MOS chip 205, and the third pin 303 is connected to the drain D of the sixth MOS chip 206. Through the first pin 301, the second pin 302 and the third pin 303, the current and voltage of the packaging structure can be monitored to determine whether the full-bridge power module is working normally.

[0037] As an example, the packaging structure also includes a plastic sealing layer, which covers the substrate 10 so that the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are insulated and isolated from the outside world.

[0038] Specifically, the plastic layer ( Figure 2The plastic layer 100 is not shown in the figure) and can be an insulating glue, which is used to cover the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 and the first base island 101, the second base island 102, the third base island 103, the fourth base island 104, the fifth base island 105 and the sixth base island 106 and the multiple connection structures between the multiple MOS tubes, so as to realize the sealing packaging of the packaging structure and ensure the reliability of the full-bridge power module. At the same time, the plastic sealing layer also exposes the multiple pins arranged on the substrate 10, so that the source, drain and gate lead-out terminals of the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 are connected to the external leads, so as to ensure that the full-bridge power module using the packaging structure can achieve good electrical connection. Exemplarily, the material of the plastic encapsulation layer can be epoxy resin. When the epoxy resin is used to encapsulate the base island and the MOS tube, the epoxy resin can be coated on the surface of the base island and the MOS tube, and fill the gaps between the first base island 101, the second base island 102, the third base island 103, the fourth base island 104, the fifth base island 105 and the sixth base island 106, so that the first base island 101, the second base island 102, the third base island 103, the fourth base island 104, the fifth base island 105 and the sixth base island 106 and the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 can simultaneously expose the lead-out ends of the source, drain and gate and the electrical pins of the external leads, and at the same time, the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 can be insulated and isolated from the outside world.

[0039] Specifically, while ensuring the performance of the full-bridge power module, the thickness, size and shape of the first MOS chip 201, the second MOS chip 202, the third MOS chip 203, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 can be selected according to actual conditions.

[0040] Specifically, inside the packaging structure, the source of the first MOS chip 201 is connected to the drain of the fourth MOS chip 204 , the source of the second MOS chip 202 is connected to the drain of the fifth MOS chip 205 , and the source of the third MOS chip 203 is connected to the drain of the sixth MOS chip 206 by bonding.

[0041] As an example, the packaging structure also includes multiple connection structures, which are arranged between the first base island 101, the second base island 102 and the third base island 103 so that the first base island 101, the second base island 102 and the third base island 103 are connected in parallel, and the connection structure is also arranged between the fourth base island 104, the fifth base island 105 and the sixth base island 106 so that the fourth base island 104, the fifth base island 105 and the sixth base island 106 are connected in parallel.

[0042] Specifically, the packaging structure also includes a connection structure; the connection structure is arranged between the first base island 101, the second base island 102 and the third base island 103, and is used to realize the parallel connection between the first MOS chip 201, the second MOS chip 202 and the third MOS chip 203; the connection structure is arranged between the fourth base island 104, the fifth base island 105 and the sixth base island 106, and is used to realize the parallel connection between the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206.

[0043] Optionally, the connection structure includes any one of a copper sheet, an aluminum ribbon, a soldered copper wire, and a gold wire.

[0044] Specifically, the connection structure can be formed when the MOS chip is arranged on the base island, and is used to connect different MOS chips. The connection structure can be any one of a copper sheet, an aluminum strip, a welding copper wire, and a gold wire, so as to realize the internal compatibility of the full-bridge power module with different connection methods, which is conducive to simplifying the integration difficulty of the full-bridge power module. In other embodiments, the substrate 10 and the base island can also be arranged as a whole, and then the substrate 10 is subjected to a half-etching process, and the MOS chip is placed in the half-etched area, so as to realize the electrical connection between the MOS chips.

[0045] Through the above-mentioned setting, the size of the full-bridge power module finally formed is 14mmx12mm. Compared with 18x14mm in the prior art, the size of the full-bridge power module is greatly reduced, which is beneficial to reducing the volume of the three-phase motor control board when the full-bridge power module is subsequently used to prepare structures such as the three-phase motor control board.

[0046] The packaging structure of this embodiment improves the pin structure of the full-bridge power module. While tiling the six MOS chips to reduce the area occupied by the PCB board, it can also effectively monitor the states of parameters such as voltage and current through the set first pin 301, second pin 302 and third pin 303. In addition, the fourth MOS chip 204, the fifth MOS chip 205 and the sixth MOS chip 206 in the lower bridge arm are set with source pins, so as to prevent voltage crosstalk from occurring during the circuit startup and shutdown process.

[0047] Another embodiment of the present invention further provides a three-phase motor control board, which includes the packaging structure applied to the full-bridge power module provided by any embodiment of the present invention.

[0048] In summary, the packaging structure and three-phase motor control board applied to the full-bridge power module of the present invention improve the pin structure of the full-bridge power module, realize the tiling of six MOS chips to reduce the area occupied by the PCB board, and can also realize the effective monitoring of the states of parameters such as voltage and current through the first pin, the second pin and the third pin set, and set the source pins of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm, so as to prevent the voltage crosstalk occurring during the opening and closing of the circuit, and the source of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip in the lower bridge arm is also connected to the corresponding power supply negative electrode pin, and then the power supply negative electrode pin is connected through the internal lead, so as to reduce the complexity of the lead, in addition, the volume of the packaging structure is small, which is conducive to reducing the volume of the full-bridge power module and the three-phase motor control board. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0049] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A packaging structure applied to a full-bridge power module, characterized in that: The invention comprises a substrate, a plurality of pins arranged around the substrate, and a first base island, a second base island, a third base island, a fourth base island, a fifth base island and a sixth base island arranged on the substrate, wherein a first MOS chip, a second MOS chip and a third MOS chip are respectively welded on the first base island, the second base island and the third base island, the first MOS chip, the second MOS chip and the third MOS chip constitute an upper bridge arm of a full-bridge package power module, and the gates, sources and drains of the first MOS chip, the second MOS chip and the third MOS chip are led out to corresponding pins on the substrate in the form of wire bonding, and are connected to the first MOS chip, the second MOS chip and the third MOS chip. The pin corresponding to the drain of the chip is connected through an internal lead and then connected to the positive electrode of the power supply. The fourth MOS chip, the fifth MOS chip and the sixth MOS chip are respectively welded on the fourth base island, the fifth base island and the sixth base island. The fourth MOS chip, the fifth MOS chip and the sixth MOS chip constitute the lower bridge arm of the full-bridge packaged power module. The gate and source of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are led out to the corresponding pins on the substrate in the form of wire bonding, and the source of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip is also connected to the corresponding negative power supply pin, and the negative power supply pin is connected through an internal lead.

2. The packaging structure applied to a full-bridge power module according to claim 1, characterized in that: The drain of the fourth MOS chip is connected to the U phase and the first pin of the motor, the drain of the fifth MOS chip is connected to the V phase and the second pin of the motor, and the drain of the sixth MOS chip is connected to the W phase and the third pin of the motor. The current and voltage of the full-bridge packaged power module are monitored through the first pin, the second pin and the third pin.

3. The packaging structure applied to a full-bridge power module according to claim 2, characterized in that: The source of the first MOS chip is connected to the drain of the fourth MOS chip, the source of the second MOS chip is connected to the drain of the fifth MOS chip, and the source of the third MOS chip is connected to the drain of the sixth MOS chip.

4. The packaging structure for a full-bridge power module according to claim 1, characterized in that: The packaging structure also includes a plurality of connection structures, wherein the connection structures are arranged between the first base island, the second base island and the third base island so that the first base island, the second base island and the third base island are connected in parallel, and the connection structures are also arranged between the fourth base island, the fifth base island and the sixth base island so that the fourth base island, the fifth base island and the sixth base island are connected in parallel.

5. The packaging structure applied to a full-bridge power module according to claim 4, characterized in that: The connection structure includes any one of a copper sheet, an aluminum ribbon, a soldered copper wire, and a gold wire.

6. The packaging structure for a full-bridge power module according to claim 1, characterized in that: The packaging structure further includes a plastic sealing layer, which covers the substrate so that the first MOS chip, the second MOS chip, the third MOS chip, the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are insulated and isolated from the outside.

7. The packaging structure for a full-bridge power module according to any one of claims 1 to 6, characterized in that: The sizes of the first base island, the second base island and the third base island are all equal, and the sizes of the fourth base island, the fifth base island and the sixth base island are all equal.

8. The packaging structure for a full-bridge power module according to claim 7, characterized in that: The sizes of the first MOS chip, the second MOS chip and the third MOS chip are all equal, and the sizes of the fourth MOS chip, the fifth MOS chip and the sixth MOS chip are all equal.

9. The packaging structure applied to a full-bridge power module according to claim 8, characterized in that: The size of the packaging structure is 12mmx14mm.

10. A three-phase motor control board, characterized in that: The three-phase motor control board includes the packaging structure applied to a full-bridge power module as described in any one of claims 1 to 9.

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