Temperature measurement system and preparation method thereof

Abstract

The embodiment of the invention relates to the field of photovoltaic technology, and provides a temperature measurement system and a preparation method thereof. The preparation method of the temperature measurement system comprises the steps of drawing a circuit diagram of the temperature measurement system according to an application scene of the temperature measurement system, and forming the circuit structure on the substrate according to the circuit diagram of the temperature measurement system.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of photovoltaic technology, and more specifically, to a temperature measurement system and a preparation method thereof. Background Art

[0002] In the photovoltaic and semiconductor industries, as the core temperature measurement component of solar cells and semiconductor manufacturing equipment, the performance of the temperature measurement system directly affects the production accuracy and efficiency of the equipment. The existing temperature measurement system mainly uses non-contact high-temperature radiation measurement, but this method has disadvantages such as low temperature measurement accuracy and long response time, which is difficult to meet the needs. Summary of the invention

[0003] The first aspect of the present application provides a method for preparing a temperature measurement system. The temperature measurement system includes a substrate and a circuit structure located on the substrate, the circuit structure includes at least one temperature measurement line, each temperature measurement line includes at least one stack, each stack includes a temperature measurement layer and a protective layer located on the temperature measurement layer, the temperature measurement layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected, and a thermoelectric node is formed at the connection. The method for preparing the temperature measurement system includes: According to the application scenario of the temperature measurement system, a circuit diagram of the circuit structure of the temperature measurement system is drawn: when the application scenario is scattered-point temperature measurement, the number of temperature measurement lines in the circuit structure is multiple, the number of stacks in each temperature measurement line is one, and the multiple temperature measurement lines are spaced apart; when the application scenario is linear multi-point temperature measurement, the number of temperature measurement lines in the circuit structure is one, the number of stacks in the temperature measurement line is multiple, and all the thermoelectric nodes on the temperature measurement line are spaced apart along the length direction of the temperature measurement line; when the application scenario is temperature field characterization, the number of temperature measurement lines in the circuit structure is multiple, the number of stacks in the temperature measurement line is multiple, and the multiple temperature measurement lines are spaced apart, and all the thermoelectric nodes on each temperature measurement line are spaced apart along the length direction of the temperature measurement line; and According to the circuit diagram of the temperature measurement system, a circuit structure is formed on the substrate.

[0004] The preparation method of the temperature measurement system of the first aspect of the present application designs the corresponding circuit structure according to different application scenarios (scattered point temperature measurement, linear multi-point temperature measurement, temperature field characterization), including the number of temperature measurement lines, the number of stacks and the layout of thermoelectric nodes. Therefore, the preparation method of the temperature measurement system is highly adaptable. In different application scenarios, the preparation method of the temperature measurement system can flexibly adjust the configuration of the temperature measurement lines and stacks to meet diverse temperature measurement needs. Moreover, by rationally arranging the thermoelectric nodes, more precise temperature distribution measurements can be achieved, thereby improving the accuracy of the overall temperature measurement system. In addition, appropriate temperature measurement line and stack design can shorten the thermoelectric response path and improve the response speed of the system.

[0005] In some embodiments, when the substrate is a special-shaped part, a coating method is used to form the circuit structure; when the substrate is a regular part, a screen printing method is used to form the circuit structure.

[0006] In some embodiments, forming the circuit structure by screen printing further includes: selecting the circuit type of the temperature measuring line according to the operating temperature range of the temperature measuring system, and then determining the slurry material of the positive electrode layer and the slurry material of the negative electrode layer; wherein the operating temperature range of the temperature measuring system, the slurry material of the positive electrode layer and the slurry material of the negative electrode layer corresponding to the circuit types of different temperature measuring lines are as follows: Circuit type K: The operating temperature range is between -270~1370℃. The slurry material of the positive electrode layer includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type N: The operating temperature range is between -270 and 1300°C. The slurry material of the positive electrode layer includes nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type T: The operating temperature range is between -270~400℃. The slurry materials of the positive electrode layer include copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type J: The operating temperature range is between -210 and 1200°C. The slurry materials of the positive electrode layer include iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type E: The operating temperature range is between -270~1000℃. The slurry material of the positive electrode layer includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant, antioxidant, and diluent. Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant and diluent. Circuit type B: The operating temperature range is between 0~1500℃. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant, and diluent.

[0007] In some embodiments, forming the circuit structure by screen printing further includes: Step S10: printing a temperature measuring layer on a substrate, including: printing a slurry material of a positive electrode layer on a substrate to obtain a positive electrode layer; printing a slurry material of a negative electrode layer on a substrate to obtain a negative electrode layer, wherein the positive electrode layer is connected to the negative electrode layer and a thermoelectric node is formed at the connection; Step S20: heat treating the temperature measuring layer; Step S30: printing a protective layer on the side of the temperature measuring layer facing away from the substrate; and Step S40: performing heat treatment on the protective layer.

[0008] When there are multiple temperature measuring lines, in step S10, a positive electrode layer of multiple temperature measuring lines is obtained by printing once, and a negative electrode layer of multiple temperature measuring lines is obtained by printing once; in step S30, a protective layer of multiple temperature measuring lines is obtained by printing once.

[0009] When there are multiple stacked layers, the circuit structure is formed by screen printing, and steps S10 to S40 are executed in a loop, and each loop of steps S10 to S40 forms a stacked layer.

[0010] In some embodiments, when the material of the substrate is a conductive material, before forming the temperature measurement layer, the method for preparing the temperature measurement system further includes: forming an insulating layer on the substrate; and forming the temperature measurement layer on a surface of the insulating layer away from the substrate.

[0011] In some embodiments, each temperature measuring layer has an opening facing away from the thermoelectric node, and each stack is flush at one end of the opening; when there are multiple stacks, the lengths of the multiple stacks decrease in the direction away from the substrate; and / or, when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

[0012] In some embodiments, the method for preparing the temperature measurement system further includes: performing a secondary dimension test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

[0013] In some embodiments, the preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point calibration test.

[0014] The second aspect of the present application provides a temperature measurement system. The temperature measurement system includes a substrate and a circuit structure. The circuit structure is located on the substrate. The circuit structure includes at least one temperature measuring line, each temperature measuring line includes at least one stack, each stack includes a temperature measuring layer and a protective layer located on the temperature measuring layer, the temperature measuring layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected, and a thermoelectric node is formed at the connection. Among them, the number of temperature measuring lines is multiple, the number of stacks in each temperature measuring line is one, and the multiple temperature measuring lines are arranged at intervals; or, the number of temperature measuring lines is one, the number of stacks in the temperature measuring line is multiple, and the thermoelectric nodes of all stacks are arranged at intervals along the length direction of the temperature measuring line; or, the number of temperature measuring lines is multiple, the number of stacks in the temperature measuring line is multiple, and the multiple temperature measuring lines are arranged at intervals, and all the thermoelectric nodes on each temperature measuring line are arranged at intervals along the length direction of the temperature measuring line.

[0015] The temperature measurement system of the second aspect of the present application can meet the temperature measurement requirements of at least one application scenario including scattered-point temperature measurement, linear multi-point temperature measurement, temperature field characterization, etc.

[0016] In some embodiments, when there are multiple stacks, each temperature measuring line has an opening facing away from the thermoelectric node, and each stack is flush at one end of the opening; the lengths of the multiple stacks decrease in a direction away from the substrate; and / or, when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a flow chart of a method for preparing a temperature measurement system according to an embodiment of the present application.

[0018] Figure 2 It is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system applied to scattered-point temperature measurement according to an embodiment of the present application.

[0019] Figure 3 for Figure 2 Schematic diagram of the middle temperature measurement layer.

[0020] Figure 4 Figures (a), (b), (c), (d), and (e) are Figure 2 Schematic diagram of the circuit structure at different viewing angles.

[0021] Figure 5 It is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system applied to linear multi-point temperature measurement according to an embodiment of the present application.

[0022] Figure 6 Figures (a), (b), (c), (d), and (e) are Figure 5 Schematic diagram of the circuit structure at different viewing angles.

[0023] Figure 7 It is a three-dimensional schematic diagram of the circuit structure of a temperature measurement system applied to temperature field characterization according to an embodiment of the present application.

[0024] Figure 8 Figures (a), (b), (c), (d), and (e) are Figure 7 Schematic diagram of the circuit structure at different viewing angles.

[0025] Fig. 9 Figures (a) and (b) are three-dimensional schematic diagrams of the circuit structure of the temperature measurement system of an embodiment of the present application at different viewing angles at the corresponding cold end module.

[0026] Fig.10 Figure (a) and (b) are Fig. 9 The front view and top view of the structure in Fig.10 Figures (c), (d), (e), and (f) are Fig.10 (b) is a schematic cross-sectional view along lines EE, FF, GG, and HH.

[0027] Description of main component symbols: Circuit structure: 10a, 10b, 10c; temperature measuring line: L; stack: 11; temperature measuring layer: 111; positive electrode layer: 111a, 211a; positive electrode column: 311a; negative electrode layer: 111b, 211b; negative electrode column: 311b; thermoelectric node: N; first parallel part: A1; first connecting part: C1; second parallel part: A2; second connecting part: C2; protective layer: 112; insulating layer: 12, 22; opening: O; first direction: D1; second direction: D2; third direction: D3.

[0028] The following specific implementation methods will further illustrate the present application in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0029] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the embodiments of the present application, and cannot be understood as limiting the present application.

[0030] In the description of the embodiments of the present application, terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the implementation methods of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0031] In the description of the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0032] In the description of the embodiments of the present application, unless otherwise specified, “plurality” means two or more than two.

[0033] In the description of the embodiments of the present application, unless otherwise specified, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements or the interaction relationship between two elements.

[0034] For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0035] With the development of industry and various advanced manufacturing technologies, all walks of life have put forward higher and higher requirements for future manufacturing technologies in terms of manufacturing accuracy and obtaining high spatial resolution signals of sensors in space. Therefore, as a supporting discipline for the entire industrial production, in-depth research on thin film sensors with high spatial resolution is imminent. Among them, thin film thermocouples have many advantages such as small mass, fast response speed, small heat capacity, and no damage to the structure of the measured object. They have become advanced surface temperature measurement technology and the main means of contact temperature measurement. Thin film thermocouples can actually be regarded as special artificial thermocouples. They are an advanced temperature sensor for measuring transient temperature changes of objects. The thickness of thin film thermocouples is micron-level, which does not interfere with the distribution of the original temperature field of the measured object and can be applied to various special temperature measurement occasions. The working mechanism of thin film thermocouples is the same as that of ordinary thermocouples, that is, if there is a certain temperature difference between the hot and cold ends of a loop composed of two different homogeneous conductors, the loop will generate corresponding thermoelectric potential.

[0036] The embodiment of the present application provides a method for preparing a temperature measurement system, which can be used to solve the problem of large-area temperature point acquisition in a large heating chamber (such as metal or / quartz). By drawing a temperature field to assist in temperature control, the fluctuation of the internal temperature of the device can be monitored in real time, and the output temperature measurement temperature is highly accurate. According to different requirements, the order of some steps or sub-steps of the method for preparing the temperature measurement system can be changed, and some steps or sub-steps can be omitted or combined.

[0037] like Figure 1 As shown, the preparation method of the temperature measurement system includes the following steps S1 to S2.

[0038] Step S1: Draw a circuit diagram of the temperature measurement system according to the application scenario of the temperature measurement system.

[0039] Specifically, the temperature measurement system includes a substrate and a circuit structure located on the substrate. The circuit structure includes at least one temperature measurement line. Each temperature measurement line includes at least one stack. Each stack includes a temperature measurement layer and a protective layer located on the temperature measurement layer. The temperature measurement layer includes a positive electrode layer and a negative electrode layer, and the positive electrode layer and the negative electrode layer are connected to form a thermoelectric node at the connection. According to different application scenarios of the temperature measurement system, the number and arrangement of the temperature measurement lines in the circuit structure and the number and arrangement of the stacks are different in the temperature measurement system.

[0040] Specifically, the application scenarios of the temperature measurement system can be, but are not limited to, scattered-point temperature measurement, linear multi-point temperature measurement, and temperature field characterization. In this article, the application scenario of the temperature measurement system is "scattered-point temperature measurement", which means that the temperature measurement system can be used to detect temperature points at several discontinuous positions; the application scenario of the temperature measurement system is "linear multi-point temperature measurement", which means that the temperature measurement system can be used to measure multiple temperature points continuously along a single direction; the application scenario of the temperature measurement system is "temperature field characterization", which means that the temperature measurement system can be used to characterize the temperature distribution in two-dimensional and / or three-dimensional space.

[0041] In some embodiments, the application scenario of the temperature measurement system is scattered-point temperature measurement, the number of temperature measurement lines in the temperature measurement system is multiple, the number of stacks in each temperature measurement line is one, and the multiple temperature measurement lines are arranged at intervals.

[0042] In some embodiments, the application scenario of the temperature measurement system is linear multi-point temperature measurement, then the number of temperature measuring lines in the circuit structure is one, the number of stacks in the temperature measuring line is multiple, and all thermoelectric nodes on the temperature measuring line are spaced apart along the length direction of the temperature measuring line.

[0043] In some embodiments, the application scenario of the temperature measurement system is temperature field characterization, then the number of temperature measuring lines in the circuit structure is multiple, the number of stacks in the temperature measuring line is multiple, and the multiple temperature measuring lines are spaced apart, and all the thermoelectric nodes on each temperature measuring line are spaced apart along the length direction of the temperature measuring line.

[0044] Therefore, the preparation method of the temperature measurement system in the embodiment of the present application designs the number of temperature measuring lines and the number of stacking layers in the circuit structure according to different application scenarios, so that the temperature measurement system can flexibly adapt to various temperature measurement needs such as scattered point temperature measurement, linear multi-point temperature measurement and temperature field characterization.

[0045] It should be noted that, in the process of drawing the circuit diagram by circuit modeling in step S1, attention should be paid to the interference between the layers in the circuit structure and the structural parts on the substrate, or the circuit interference and printing interference should not occur between the circuits in the circuit structure.

[0046] Specifically, in step S1, circuit modeling and drawing of a circuit diagram of a circuit structure can be achieved by, but not limited to, the following means: professional electronic design automation software (such as Altium Designer, KiCAD, Eagle, etc.) or general drawing software (such as AutoCAD, SolidWorks, Visio, etc.).

[0047] The following is combined with Figure 2 , Figure 3 and Figure 4 The circuit structure 10a of a temperature measurement system for scattered-point temperature measurement according to an embodiment of the present application is described.

[0048] like Figure 2 As shown, the circuit structure 10a includes a plurality of temperature measuring lines L. The number of stacked layers 11 in each temperature measuring line L is one.

[0049] For the convenience of description below, the width direction of each temperature measuring line L is defined as the first direction D1, the length direction is defined as the second direction D2, and the thickness direction is defined as the third direction D3.

[0050] Figure 2 In the embodiment, a plurality of temperature measuring lines L are arranged at intervals along the first direction D1. The lengths of the temperature measuring lines L are different.

[0051] In some embodiments, the material of the substrate (not shown) is a conductive material (such as stainless steel), and each temperature measuring line L further includes an insulating layer 12. The stack 11 is located on the insulating layer 12. The circuit structure 10a is formed on the surface of the insulating layer 12 that is away from the substrate. Therefore, forming the insulating layer 12 on the conductive substrate is conducive to preventing electrical short circuits between the circuit structure and the substrate, thereby improving the accuracy of the temperature measurement system.

[0052] In other embodiments, when the material of the substrate is an insulating material (such as quartz or ceramic), the insulating layer 12 in each temperature measuring line L can be omitted.

[0053] Specifically, the stack 11 includes a temperature measuring layer 111 and a protective layer 112 located on the temperature measuring layer 111. The protective layer 112 is located on the side of the temperature measuring layer 111 away from the insulating layer 12, or on the side of the temperature measuring layer 111 away from the substrate. The protective layer 112 is used to protect the temperature measuring layer 111 to prevent the temperature measuring layer 111 from being damaged and affecting the accuracy of temperature measurement.

[0054] In some embodiments, the material of the protective layer 112 may be, but is not limited to, an oxide film and / or a nitride film. Both the oxide film and the nitride film have good corrosion resistance and chemical stability, can resist erosion by the external environment, and can provide good protection for the temperature measuring layer 111.

[0055] like Figure 3 As shown, the temperature measuring layer 111 includes a positive electrode layer 111a and a negative electrode layer 111b, and the positive electrode layer 111a and the negative electrode layer 111b are connected to form a thermoelectric node N at the connection. The positive electrode layer 111a and the negative electrode layer 111b are arranged roughly symmetrically. The positive electrode layer 111a and the negative electrode layer 111b are both roughly L-shaped. The temperature measuring layer 111 is roughly U-shaped and has an opening O. The thermoelectric node N is opposite to the opening O.

[0056] Specifically, the positive electrode layer 111a includes a first parallel portion A1 and a first connecting portion C1, and the negative electrode layer 111b includes a second parallel portion A2 and a second connecting portion C2. The first parallel portion A1 of the positive electrode layer 111a and the second parallel portion A2 of the negative electrode layer 111b are opposite and spaced apart. The first connecting portion C1 is bent and extended from one end of the first parallel portion A1 toward the second parallel portion A2. The second connecting portion C2 is bent and extended from one end of the second parallel portion A2 toward the first parallel portion A1, and is connected to the first connecting portion C1 between the first parallel portion A1 and the second parallel portion A2. The end face of the first connecting portion C1 of the positive electrode layer 111a and the end face of the second connecting portion C2 of the negative electrode layer 111b are in contact and connected, forming a thermoelectric node N in the contact area.

[0057] In other embodiments, the first connection portion C1 and the second connection portion C2 may be partially overlapped to form a thermoelectric node N.

[0058] The positive electrode layer 111a and the negative electrode layer 111b can be connected to the instrument (not shown) in the control room through leads (not shown), so that the positive electrode layer 111a, the negative electrode layer 111b, the leads and the instrument form a conductive loop. The positive electrode layer 111a and the negative electrode layer 111b are formed by different conductors. Since the thermal differential electromotive force between different conductor materials is different and changes with temperature, the change of the electromotive force follows a fixed rule. Therefore, when the temperature measuring layer 111 is heated, the electrons in the positive electrode layer 111a and the negative electrode layer 111b will be affected by different degrees of thermal energy, thereby generating a thermal differential electromotive force at the thermoelectric node N. By measuring this thermal differential electromotive force through an instrument, the temperature at the location of the temperature measuring layer 111 can be determined.

[0059] like Figure 2 and Figure 4 As shown in FIG. 2( a ), the opening O at the stacking layer 11 of each temperature measuring line L is oriented in the same direction.

[0060] like Figure 2 , Figure 4 Figure (b) in Figure 4 Figure (c) in Figure 4 As shown in Figure (d), each temperature measuring line L includes an insulating layer 12 and a laminate 11. Along the positive direction of the first direction D1, the lengths of the multiple temperature measuring lines L or the lengths of the multiple laminates 11 increase. In other embodiments, along the arrangement direction of the temperature measuring lines L, the lengths of the multiple temperature measuring lines L or the lengths of the multiple laminates 11 are different, but along the arrangement direction of the temperature measuring lines L, the lengths of the multiple temperature measuring lines L or the lengths of the multiple laminates 11 are not limited to increasing. For example, along the arrangement direction of the temperature measuring lines L, the lengths of the multiple temperature measuring lines L or the lengths of the multiple laminates 11 may first increase and then decrease or first decrease and then increase, or change irregularly, as long as it can meet the temperature measurement of multiple discrete positions.

[0061] like Figure 2 and Figure 4 As shown in FIG. 5( e ), the orientation of the thermoelectric node N at the stacking layer 11 of each temperature measuring line L is the same.

[0062] comprehensive Figure 2 , Figure 3 and Figure 4 It can be seen that the circuit structure 10a can perform scattered point tests on multiple temperature measurement areas. Since the circuit structure 10a has multiple temperature measurement lines L, the circuit structure 10a is particularly suitable for temperature detection in a large space.

[0063] The following is combined with Figure 5 and Figure 6 The circuit structure 10b of a temperature measurement system applied to linear multi-point temperature measurement according to an embodiment of the present application is described.

[0064] like Figure 5 As shown, the number of temperature measuring lines L in the circuit structure 10b is one. Different from the circuit structure 10a, in the circuit structure 10b, the number of stacks 11 in the temperature measuring line L is multiple. Multiple stacks 11 are stacked in sequence along the third direction D3. The thermoelectric nodes N in each stack 11 are exposed at the corresponding protective layer 112, and all the thermoelectric nodes N are arranged at intervals along the length direction of the temperature measuring line L.

[0065] like Figure 5 and Figure 6 As shown in FIG. 2( a ), along the second direction D2 , the thermoelectric nodes N of the plurality of stacks 11 are arranged at intervals.

[0066] like Figure 5 and Figure 6 As shown in FIG. 2( b ), the end faces of each stack 11 at the opening O are flush. In the positive direction along the third direction D3 (or in the direction away from the substrate), the lengths of the plurality of stacks 11 decrease in sequence.

[0067] Thus, the decreasing length design of the multiple stacks 11 makes the multiple thermoelectric nodes N non-interfering with each other and evenly distributed, thereby measuring the temperatures of multiple different temperature zones, improving the accuracy and reliability of temperature measurement. Moreover, the optimized arrangement of the stacks 11 improves the space utilization of the circuit structure, making the temperature measurement system more compact and lightweight.

[0068] like Figure 5 and Figure 6 As shown in FIG. (c) of FIG. 1 , the temperature measuring line L further includes an insulating layer 12. Similar to the circuit structure 10a, the circuit structure 10b can be used when the substrate is a conductive material. The insulating layer 12 is used to insulate and space the circuit structure 10b from the substrate. If the substrate is an insulating material, the insulating layer 12 in the circuit structure 10b can be omitted.

[0069] like Figure 5 and Figure 6 As shown in FIG. 5( d ) , the thermoelectric nodes N in each stack 11 are oriented in the same direction.

[0070] like Figure 5 and Figure 6 As shown in FIG. 5( e ), the openings O in each stack 11 are oriented in the same direction. In addition, along the third direction D3 , the openings O in the plurality of stacks 11 are substantially aligned.

[0071] Combination Figure 5 and Figure 6 It can be seen that the number of the temperature measuring line L in the circuit structure 10b is one, and therefore, the circuit structure 10b is particularly suitable for temperature detection in a small space.

[0072] The following is combined with Figure 7 and Figure 8The circuit structure 10c of a temperature measurement system for temperature field characterization according to an embodiment of the present application is described.

[0073] like Figure 7 As shown, the structure of the temperature measuring line L in the line structure 10c is the same as that of the temperature measuring line L in the line structure 10b. The difference from the line structure 10b is that the number of the temperature measuring lines L in the line structure 10c is multiple.

[0074] like Figure 7 and Figure 8 As shown in FIG. 2( a ), along the first direction D1 , a plurality of temperature measuring lines L are arranged at intervals. The openings O of the plurality of stacks 11 in each temperature measuring line L face the same direction.

[0075] like Figure 7 , Figure 8 Figure (b) and Figure 8 As shown in FIG. 5( d ) in FIG. 5 , one end of each stack 11 is flush at the opening O. Along the positive direction of the third direction D3 (or in the direction away from the substrate), the length of each stack 11 decreases successively.

[0076] Thus, the decreasing length design of the multiple stacks 11 makes the multiple thermoelectric nodes N non-interfering with each other and evenly distributed, thereby measuring the temperatures of multiple different temperature zones, improving the accuracy and reliability of temperature measurement. Moreover, the optimized arrangement of the stacks 11 improves the space utilization of the circuit structure, making the temperature measurement system more compact and lightweight.

[0077] like Figure 7 and Figure 8 As shown in FIG. 1 (c), each temperature measuring line L further includes an insulating layer 12, and the size of the insulating layer 12 of each temperature measuring line L is substantially the same. Similar to the circuit structure 10a, the circuit structure 10c can be used when the substrate is a conductive material. The insulating layer 12 is used to insulate and space the circuit structure 10c and the substrate. If the substrate is an insulating material, the insulating layer 12 in the circuit structure 10c can be omitted.

[0078] like Figure 7 and Figure 8 As shown in Figure (e), the orientation of the thermoelectric nodes N in each stack 11 is the same. In addition, along the second direction D2, the multiple thermoelectric nodes N in each temperature measuring line L are arranged at intervals. Thus, each temperature measuring line L can measure the temperature of multiple regions along the second direction D2, and multiple temperature measuring lines L can measure the temperature of multiple regions along the first direction D1, and then the circuit structure 10c can measure the temperature field of the two-dimensional plane formed by the first direction D1 and the second direction D2.

[0079] Combination Figure 7 and Figure 8It can be seen that the number of temperature measuring lines L in the circuit structure 10c is multiple, so the circuit structure 10c is particularly suitable for temperature detection in a large space.

[0080] Step S2: forming a circuit structure on a substrate according to a circuit diagram of the temperature measurement system.

[0081] In some embodiments, when the substrate is a special-shaped part, the circuit structure is formed by coating. In some embodiments, when the substrate is a regular part, the circuit structure is formed by screen printing. Therefore, the preparation method of the temperature measurement system of the embodiment of the present application can select a suitable process according to the shape of the substrate, ensure the uniformity and adhesion of the circuit structure, simplify the production process, reduce manufacturing costs, and enhance the reliability of the circuit structure.

[0082] In some embodiments, the material of the substrate is a conductive material. In step S2 , an insulating layer 12 needs to be formed on the substrate first, and then a temperature measuring layer 111 is formed on the surface of the insulating layer 12 facing away from the substrate.

[0083] In some embodiments, the material of the substrate is insulating (or a non-metallic substrate), and then there is no need to form an insulating layer 12 on the substrate in step S2 , and the temperature measuring layer 111 can be directly formed on the substrate.

[0084] In some embodiments, forming the circuit structure by screen printing also includes: selecting the circuit type of the temperature measuring line L according to the operating temperature range of the temperature measuring system, and then determining, configuring and producing the slurry material of the positive electrode layer 111a and the slurry material of the negative electrode layer 111b.

[0085] Specifically, the operating temperature range of the temperature measuring system, the slurry material of the positive electrode layer 111 a , and the slurry material of the negative electrode layer 111 b corresponding to different line types of the temperature measuring line L are as follows.

[0086] Circuit type K: The operating temperature range is between -270 and 1370°C. The slurry material of the positive electrode layer 111a includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0087] Circuit type N: The operating temperature range is between -270 and 1300°C. The slurry material of the positive electrode layer 111a includes nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0088] Circuit type T: The operating temperature range is between -270 and 400°C. The slurry material of the positive electrode layer 111a includes copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0089] Circuit type J: The operating temperature range is between -210 and 1200° C. The slurry material of the positive electrode layer 111 a includes iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111 b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0090] Circuit type E: The operating temperature range is between -270 and 1000° C. The slurry material of the positive electrode layer 111 a includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111 b includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent.

[0091] Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer 111a includes platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer 111b includes platinum powder, glass powder, dispersant, antioxidant, and diluent.

[0092] Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer 111a includes platinum-rhodium alloy powder, glass powder, dispersant and diluent. The slurry material of the negative electrode layer 111b includes platinum powder, glass powder, dispersant and diluent.

[0093] Circuit type B: The operating temperature range is between 0 and 1500° C. The slurry material of the positive electrode layer 111 a includes platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry material of the negative electrode layer 111 b includes platinum powder, glass powder, dispersant, and diluent.

[0094] It should be noted that when selecting the slurry for the positive electrode layer 111a and the slurry for the negative electrode layer 111b, the following performance indicators of the slurry can be considered: main material ratio, viscosity, fineness, printing screen, drying temperature, sintering temperature, fired film thickness, coating rate, square resistance, solderability, solder resistance, adhesion, corresponding diluent, etc.

[0095] In addition, the configuration and production of the slurry material of the positive electrode layer 111a and the slurry material of the negative electrode layer 111b may include the following steps: (1) Preparation and production of solid main materials: Weigh the solid main materials in proportion, mix, ball mill, and ultrasonically screen them for later use (herein referred to as material A); (2) Preparation and production of dispersants: weigh the raw materials according to the dispersant ratio, mix, grind, heat, homogenize, add a suitable proportion of diluent and set aside (this is called material B); (3) Preparation and production of slurry: Material A and material B are prepared in proportion, and after mixing, grinding, heating and homogenization, diluent is added to adjust the construction viscosity according to different working conditions.

[0096] Specifically, based on actual working conditions, the line type and slurry material of the line structure are shown in Tables 1 and 2.

[0097] In Table 1, single-layer multi-line means that the number of stacked layers consisting of the temperature measuring layer and the protective layer is one, and the number of temperature measuring lines is greater than one; multi-layer single-line means that the number of stacked layers consisting of the temperature measuring layer and the protective layer is greater than one, and the number of temperature measuring lines is one; multi-layer multi-line means that the number of stacked layers consisting of the temperature measuring layer and the protective layer is greater than one, and the number of temperature measuring lines is greater than one.

[0098] In the embodiment of the present application, when the circuit structure is formed by screen printing, the circuit type of the temperature measuring line L is selected according to the use temperature range, and the slurry material of the positive and negative electrode layers 111b is determined. In addition, a variety of circuit types (K, N, T, J, E, R, S, B) are provided, and each circuit type corresponds to a specific use temperature range and slurry material formula. Therefore, by providing a variety of circuit types, the temperature measurement system can cover a wider temperature range and meet the needs of different application environments.

[0099] Table 1 Table 2 In addition, by selecting appropriate slurry materials according to different temperature ranges, the performance and stability of the temperature measuring line L at a specific temperature can be improved. In addition, the material and structure of the temperature measuring line L can be customized according to specific application requirements to improve the flexibility and market competitiveness of the temperature measuring system.

[0100] In some embodiments, one or more of the positive electrode layer 111a, the negative electrode layer 111b, the insulating layer 12 and the protective layer 112 may be thick films (e.g., with a thickness greater than 2.5 microns), which may be formed by thick film printing technology. When the positive electrode layer 111a or the negative electrode layer 111b is a thick film, the thermal differential electromotive force at the connection between the positive electrode layer 111a and the negative electrode layer 111b may be adjusted by adjusting the composition of the slurry in the positive electrode layer 111a and the composition of the slurry in the negative electrode layer 111b. In addition, the thick film printing technology can form a thick film on a large-diameter barrel.

[0101] In some embodiments, forming the circuit structure by screen printing further includes the following steps S10 to S40.

[0102] Step S10: printing a temperature measuring layer on the substrate.

[0103] Specifically, step S10 includes: printing a paste material of a positive electrode layer on a substrate to obtain a positive electrode layer. Printing a paste material of a negative electrode layer on a substrate to obtain a negative electrode layer, and connecting the positive electrode layer and the negative electrode layer to form a thermoelectric node at the connection.

[0104] In some embodiments, there are multiple temperature measuring lines L in the circuit structure (for example, circuit structure 10a and circuit structure 10c). In step S10, the positive electrode layer 111a of the multiple temperature measuring lines L is obtained by one printing, and the negative electrode layer 111b of the multiple temperature measuring lines L is obtained by one printing.

[0105] Thus, the production speed is significantly increased and the manufacturing cost is reduced by printing the positive electrode layer 111a or the negative electrode layer 111b of multiple temperature measuring lines L at one time. Moreover, the unified printing and heat treatment steps ensure the process consistency of each temperature measuring line L and improve the product quality.

[0106] Step S20: performing heat treatment on the temperature measuring layer.

[0107] In some embodiments, the heat treatment in step S20 includes drying and sintering. In general continuous production, drying and sintering are performed at one time in a continuous kiln.

[0108] Step S30: printing a protective layer on the side of the temperature measuring layer facing away from the substrate.

[0109] In some embodiments, there are multiple temperature measuring lines L in the circuit structure (eg, the circuit structure 10a and the circuit structure 10c), and in step S30, the protective layer 112 of the multiple temperature measuring lines L is obtained by printing once.

[0110] Thus, by printing the protective layer 112 of multiple temperature measuring lines L at one time, the production speed is significantly increased and the manufacturing cost is reduced. Moreover, the unified printing and heat treatment steps ensure the process consistency of each temperature measuring line L and improve the product quality.

[0111] Step S40: performing heat treatment on the protective layer.

[0112] In some embodiments, the number of stacks 11 of the temperature measuring line L in the circuit structure is multiple (for example, the circuit structure 10b and the circuit structure 10c), the circuit structure is formed by screen printing and steps S10 to S40 are performed cyclically, and each cycle of steps S10 to S40 forms a stack 11. Therefore, multiple cycles of printing and heat treatment are conducive to maintaining the consistency of the processing technology and simplifying the production process.

[0113] In some embodiments, the heat treatment in step S40 includes drying and sintering. In general continuous production, drying and sintering are performed at one time in a continuous kiln.

[0114] Specifically, according to the circuit type, specific application and circuit diagram, the printing method is shown in Table 3.

[0115] Table 3 It should be noted that among the formation methods in Table 3 above, the coating method for forming the circuit structure does not require the preparation of slurry. The coating method may be, but is not limited to, physical vapor deposition, chemical vapor deposition, etc.; and the other printing methods may utilize screens of different properties to obtain the desired circuits through manual, semi-automatic mechanical or automated printing.

[0116] It should also be noted that the various forming methods in Table 3 above are not mutually exclusive. For example, the thick film printing method may include thick film printing by plane screen printing, and may also include thick film printing by curved screen printing. Alternatively, the coating method may form a thin film (e.g., a thickness of less than 2.5 microns), and may also form a thin film by plane screen printing or curved screen printing.

[0117] In some embodiments, the method for preparing the temperature measurement system further includes: performing a secondary dimension test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

[0118] Specifically, in the two-dimensional measurement test, the line width dimension error (mm) of the temperature measuring line L is required to be: ±0.01, the line length dimension error (mm): ±0.1, and the line thickness dimension error (mm): ±0.005. In the electrical performance test, the line square resistance error value (Ω) of a single temperature measuring line L is required to be: ±0.15, and the line-to-line square resistance (MΩ): ≥2. Therefore, through the two-dimensional measurement test, it can be ensured that the geometric dimensions of the line structure meet the design requirements and avoid temperature measurement errors caused by dimensional deviations. The electrical performance test ensures the stability and accuracy of the line structure in actual work and reduces the measurement deviation caused by poor electrical performance. Therefore, these test steps jointly improve the measurement accuracy and data reliability of the entire temperature measurement system.

[0119] In some embodiments, the preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point calibration test.

[0120] Specifically, a standard thermocouple is used as a temperature measurement device to record the thermal differential electromotive force of each line at each temperature point, draw the temperature measurement characteristic curve in parallel, and calculate the curve correlation coefficient "R", requiring R ≥ 0.95. Therefore, through the temperature point benchmarking test, the temperature measurement accuracy of the temperature measurement system is calibrated to ensure the measurement accuracy in actual applications.

[0121] In some embodiments, the overall temperature measurement system adopts flange-type splicing, and the cold end lead-out method is modular plug-in type. Specifically, Figures 2 to 8 The circuit structure of the temperature measurement system in different application scenarios is shown in the schematic diagram of the corresponding hot end module. Fig. 9 and Fig.10 A schematic diagram illustrating the circuit structure of the temperature measurement system of an embodiment of the present application corresponding to the cold end module. Figures 2 to 8 The hot end module portion of the circuit structure shown may be formed on the inner wall of the reaction chamber of the furnace body. Fig. 9 and Fig.10 The cold end module of the circuit structure shown can be formed on the flange at the furnace mouth or on the furnace door by printing. The cold end module and the hot end module can be connected by a compensation wire, but is not limited thereto.

[0122] like Fig. 9 As shown in (a) and (b) of FIG. 3 , the cold end module of the circuit structure includes a positive electrode layer 211 a , a negative electrode layer 211 b , an insulating layer 22 , a positive electrode column 311 a and a negative electrode column 311 b .

[0123] Please refer to Fig. 9 and Fig.10 In Figures (a), (b), (c), (d), (e), and (f), a plurality of positive electrode layers 211a are stacked along the third direction D3, and an insulating layer 22 is provided between two adjacent positive electrode layers 211a along the third direction D3, so that the two adjacent positive electrode layers 211a along the third direction D3 are isolated from each other and electrically insulated. The number of positive electrode columns 311a is the same as the number of positive electrode layers 211a. A plurality of positive electrode columns 311a are arranged at intervals along the first direction D1, and each positive electrode layer 211a is electrically connected to a corresponding positive electrode column 311a. The number of negative electrode layers 211b is the same as the number of positive electrode layers 211a. A plurality of negative electrode layers 211b are stacked along the third direction D3, and an insulating layer 22 is provided between two adjacent negative electrode layers 211b along the third direction D3, and all negative electrode layers 211b are connected to the same negative electrode column 311b. Thus, the circuit structure of the cold end module is simplified.

[0124] In other embodiments, the structures of the positive electrode layer 211a and the negative electrode layer 211b at the cold end module are not limited to Fig. 9 and Fig.10For example, in other embodiments, a negative electrode column 311b may be provided for each negative electrode layer 211b, and each negative electrode layer 211b is connected to a corresponding negative electrode column 311b.

[0125] In some embodiments, Fig. 9 and Fig.10 The cold end module of the circuit structure shown is formed on the furnace door. When the furnace door is closed, the positive electrode column 311a at the cold end module of the circuit structure contacts and is electrically connected to the positive electrode layer 111a at the hot end module of the circuit structure on the inner wall of the reaction chamber of the furnace body, and the negative electrode column 311b at the cold end module of the circuit structure contacts and is electrically connected to the negative electrode layer 111b at the hot end module of the circuit structure in the reaction chamber, thereby forming a conductive circuit.

[0126] The present application also provides a temperature measurement system (not shown). The temperature measurement system includes a substrate and a circuit structure located on the substrate. The substrate can be, but is not limited to, a reaction chamber of a heating furnace. The circuit structure can be Figures 2 to 10 The circuit structure described in any one of the embodiments and its variations.

[0127] In summary, the temperature measurement system and preparation method of the embodiment of the present application are conducive to solving the problem of large-area temperature point collection in a large heating chamber (metal or / quartz). By drawing the temperature field to assist in temperature control, the temperature fluctuation inside the equipment can be monitored in real time, and the output temperature measurement temperature is highly accurate. Printing routes for different processes can be flexibly designed according to the application scenario of the equipment.

[0128] The above implementation modes are only used to illustrate the technical solutions of the present application and are not intended to limit the present application. Although the present application has been described in detail with reference to the above preferred implementation modes, a person skilled in the art should understand that the technical solutions of the present application may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present application.

Claims

1. A method for preparing a temperature measurement system, characterized in that: The temperature measurement system includes a substrate and a circuit structure located on the substrate, the circuit structure includes at least one temperature measurement line, each of the temperature measurement lines includes at least one stack, each of the stack includes a temperature measurement layer and a protective layer located on the temperature measurement layer, the temperature measurement layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected, and a thermoelectric node is formed at the connection; the preparation method of the temperature measurement system includes: According to the application scenario of the temperature measurement system, a circuit diagram of the circuit structure is drawn: when the application scenario is scattered-point temperature measurement, the number of the temperature measuring lines in the circuit structure is multiple, the number of the stacking layers in each of the temperature measuring lines is one, and the multiple temperature measuring lines are spaced apart; when the application scenario is linear multi-point temperature measurement, the number of the temperature measuring lines in the circuit structure is one, the number of the stacking layers in the temperature measuring lines is multiple, and all the thermoelectric nodes on the temperature measuring lines are spaced apart along the length direction of the temperature measuring lines; when the application scenario is temperature field characterization, the number of the temperature measuring lines in the circuit structure is multiple, the number of the stacking layers in the temperature measuring lines is multiple, and the multiple temperature measuring lines are spaced apart, and all the thermoelectric nodes on each of the temperature measuring lines are spaced apart along the length direction of the temperature measuring lines; and According to the circuit diagram of the temperature measurement system, the circuit structure is formed on the substrate.

2. The method for preparing a temperature measurement system according to claim 1, characterized in that: When the substrate is a special-shaped part, the circuit structure is formed by coating; when the substrate is a regular part, the circuit structure is formed by screen printing.

3. The method for preparing the temperature measurement system according to claim 2, characterized in that: Forming the circuit structure by screen printing also includes: According to the operating temperature range of the temperature measuring system, the line type of the temperature measuring line is selected to determine the slurry material of the positive electrode layer and the slurry material of the negative electrode layer; wherein the operating temperature range of the temperature measuring system, the slurry material of the positive electrode layer and the slurry material of the negative electrode layer corresponding to different line types of the temperature measuring line are as follows: Circuit type K: The operating temperature range is between -270~1370℃. The slurry material of the positive electrode layer includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes nickel-aluminum alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type N: The operating temperature range is between -270 and 1300°C. The slurry material of the positive electrode layer includes nickel-chromium-silicon alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes nickel-silicon-magnesium alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type T: The operating temperature range is between -270~400℃. The slurry materials of the positive electrode layer include copper powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type J: The operating temperature range is between -210 and 1200°C. The slurry materials of the positive electrode layer include iron powder, glass powder, dispersant, antioxidant, and diluent. The slurry materials of the negative electrode layer include copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type E: The operating temperature range is between -270~1000℃. The slurry material of the positive electrode layer includes nickel-chromium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes copper-nickel alloy powder, glass powder, dispersant, antioxidant, and diluent. Circuit type R: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant, antioxidant, and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant, antioxidant, and diluent. Circuit type S: The operating temperature range is between -50 and 1500°C. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant and diluent. Circuit type B: The operating temperature range is between 0~1500℃. The slurry material of the positive electrode layer includes platinum-rhodium alloy powder, glass powder, dispersant, and diluent. The slurry material of the negative electrode layer includes platinum powder, glass powder, dispersant, and diluent.

4. The method for preparing the temperature measurement system according to claim 3, characterized in that: Forming the circuit structure by screen printing also includes: Step S10: printing a temperature measuring layer on the substrate, including: printing the slurry material of the positive electrode layer on the substrate to obtain a positive electrode layer; printing the slurry material of the negative electrode layer on the substrate to obtain a negative electrode layer, wherein the positive electrode layer is connected to the negative electrode layer and a thermoelectric node is formed at the connection; Step S20: performing heat treatment on the temperature measuring layer; Step S30: printing a protective layer on a side of the temperature measuring layer away from the substrate; and Step S40: heat treating the protective layer; When there are multiple temperature measuring lines, in step S10, the positive electrode layer of the multiple temperature measuring lines is obtained by printing once, and the negative electrode layer of the multiple temperature measuring lines is obtained by printing once; in step S30, the protective layer of the multiple temperature measuring lines is obtained by printing once; When there are multiple stacks, the circuit structure is formed by screen printing, and the steps S10 to S40 are executed in a loop, and each loop of the steps S10 to S40 forms one stack.

5. The method for preparing a temperature measurement system according to claim 4, characterized in that: When the material of the substrate is a conductive material, before forming the temperature measuring layer, the method for preparing the temperature measuring system further includes: An insulating layer is formed on the substrate; and the temperature measuring layer is formed on a surface of the insulating layer away from the substrate.

6. The method for preparing a temperature measurement system according to claim 1, characterized in that: Each of the temperature measurement layers has an opening facing away from the thermoelectric node, and one end of each of the stacked layers at the opening is flush; When there are multiple stacks, the lengths of the multiple stacks decrease along the direction away from the substrate; and / or when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

7. The method for preparing a temperature measurement system according to any one of claims 1 to 6, characterized in that: The method for preparing the temperature measurement system further includes: performing a secondary element measurement test and / or an electrical performance test on the circuit structure to obtain a hot end module that meets preset standards.

8. The method for preparing a temperature measurement system according to claim 7, characterized in that: The preparation method of the temperature measurement system further includes: assembling the compensation wire, the cold end module, and the hot end module, and performing a temperature point benchmarking test.

9. A temperature measurement system, characterized in that: include: matrix; as well as A circuit structure is located on the substrate, the circuit structure includes at least one temperature measuring line, each of the temperature measuring lines includes at least one stack, each of the stack includes a temperature measuring layer and a protective layer located on the temperature measuring layer, the temperature measuring layer includes a positive electrode layer and a negative electrode layer, the positive electrode layer and the negative electrode layer are connected, and a thermoelectric node is formed at the connection; There are multiple temperature measuring lines, each of which has one stack, and the multiple temperature measuring lines are spaced apart. Or, the number of the temperature measuring line is one, the number of the stacks in the temperature measuring line is multiple, and the thermoelectric nodes of all the stacks are arranged at intervals along the length direction of the temperature measuring line; Or, there are multiple temperature measuring lines, there are multiple stacks in the temperature measuring lines, and the multiple temperature measuring lines are arranged at intervals, and all the thermoelectric nodes on each temperature measuring line are arranged at intervals along the length direction of the temperature measuring line.

10. The temperature measurement system according to claim 9, characterized in that: When there are multiple stacks, each of the temperature measuring lines has an opening away from the thermoelectric node, and one end of each stack is flush at the opening; the lengths of the multiple stacks decrease in a direction away from the substrate; and / or, when there are multiple temperature measuring lines, the lengths of the multiple stacks are different along the arrangement direction of the multiple temperature measuring lines.

Images