Laser, optical assembly, optical module and optical distribution network equipment

Abstract

The embodiment of the invention provides a laser, an optical assembly, an optical module and optical distribution network equipment, relates to the technical field of semiconductors, and is used for realizing bidirectional change of laser wavelength of the laser. The laser is provided with a first laser area, a first phase shift area and a second phase shift area, and intervals are arranged among the first laser area, the first phase shift area and the second phase shift area. The laser comprises a first waveguide layer, an active layer, a second waveguide layer and a grating structure which are stacked. The active layer is located in the first laser area, and the first waveguide layer and the second waveguide layer are located in the first laser area, the first phase shift area and the second phase shift area. The grating structure comprises a plurality of grating gaps. The grating structure is located in the first laser region. Wherein the first laser area is used for generating laser, and the first phase shift area and the second phase shift area are used for regulating and controlling the laser wavelength to increase or decrease respectively.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a laser, an optical component, an optical module, and an optical distribution network device. Background Art

[0002] Lasers are widely used in coherent optical communications, wavelength division multiplexing, spectrum detection, and optical distribution networks. The light sources in the above scenarios need to be continuously tunable in wavelength so that the laser can be adjusted to the corresponding wavelength to meet the working needs. In addition, in the above application scenarios, lasers need to cooperate with other optical devices to achieve bidirectional changes in the laser wavelength. Summary of the invention

[0003] The embodiments of the present application provide a laser, an optical component, an optical module, and an optical distribution network device for realizing bidirectional change of the laser wavelength of the laser.

[0004] In order to achieve the above objectives, this application adopts the following technical solutions:

[0005] In a first aspect of an embodiment of the present application, a laser is provided, wherein the laser has a first laser region, a first phase shift region, and a second phase shift region, and the first laser region, the first phase shift region, and the second phase shift region are spaced apart from each other. The laser comprises a first waveguide layer, an active layer, a second waveguide layer, and a grating structure which are stacked. The active layer is located in the first laser region, and the first waveguide layer and the second waveguide layer are both located in the first laser region, the first phase shift region, and the second phase shift region. The grating structure comprises a plurality of slits. The grating structure is located in the first laser region. The first laser region is used to generate laser light, and the first phase shift region and the second phase shift region are used to respectively control the increase or decrease of the laser wavelength.

[0006] In the laser provided in the embodiment of the present application, the grating structure of the laser is located in the first laser region, which can make the laser generated by the first laser region reflect only one wavelength of light, so as to reduce the spectral width of the laser. At the same time, the waveguides of the first phase shift region and the second phase shift region of the laser can provide the grating bandgap width for the laser, thereby forming a band gap, and the wavelength of the laser can be controlled by adjusting the current in the first phase shift region or the second phase shift region.

[0007] In addition, the first laser region, the first phase shift region, and the second phase shift region are all isolated from each other, and the first phase shift region and the second phase shift region can be used to achieve bidirectional control of the laser wavelength, thereby eliminating the need to use a thermoelectric cooler to control the laser. Therefore, the solution of the embodiment of the present application can reduce the power consumption and cost of the laser.

[0008] In addition, the preparation of the laser provided in the embodiment of the present application is compatible with the preparation process of the existing laser, thereby reducing the preparation cost.

[0009] In a possible implementation, the laser further includes a waveguide structure; the waveguide structure is located on a side of the second waveguide layer away from the active layer and is disposed in the same layer as the grating structure; the waveguide structure is located in at least one of the first phase shift region and the second phase shift region. In this way, the preparation is simple and easy to implement.

[0010] In a possible implementation, the active layer is also located in the first phase shift region and the second phase shift region. In this way, the preparation is simple and easy to implement.

[0011] In a possible implementation, the laser further includes a bulk waveguide layer; the bulk waveguide layer is located between the first waveguide layer and the second waveguide layer and is disposed in the same layer as the active layer; the bulk waveguide layer is located in the first phase shift region and the second phase shift region. In this way, the bulk waveguide layer will not generate gain due to its material properties and can reduce loss.

[0012] In a possible implementation, the refractive index of the material of the bulk waveguide layer is greater than the refractive index of the material of the first waveguide layer and the material of the second waveguide layer, so that the loss can be reduced.

[0013] In a possible implementation, the material of the bulk waveguide layer includes a quaternary compound semiconductor material. In this way, the bulk waveguide layer will not generate gain due to its material properties, while reducing loss.

[0014] In a possible implementation, the grating structure includes a Bragg grating, so that it can be compatible with the existing laser manufacturing process and reduce the manufacturing cost.

[0015] In a possible implementation, the thickness of the grating structure is greater than 40 nm, which can increase the bandgap width of the grating structure and further increase the wavelength tuning range of the laser.

[0016] In a possible implementation, the laser further includes a first electrode, a second electrode, a third electrode, a fourth electrode and a fifth electrode; the first electrode is located on the side of the first waveguide layer away from the active layer, and is located in the first laser region and the first phase shift region; the second electrode, the third electrode, the fourth electrode and the fifth electrode are all located on the side of the second waveguide layer away from the active layer; the second electrode is located in the first laser region, the third electrode is located in the first phase shift region, and the fourth electrode and the fifth electrode are located in the second phase shift region. In this way, current can be injected into the first laser region, the first phase shift region and the second phase shift region respectively to change the laser wavelength.

[0017] In a possible implementation, the laser further includes a heating structure; the heating structure is located in the second phase shift region. The heating structure includes a metal film layer or a heater. In this way, the tuning efficiency of the second phase shift region to the laser wavelength can be improved.

[0018] In a possible implementation, the first laser region, the first phase shift region, and the second phase shift region are arranged in sequence along a first direction, the first direction is perpendicular to the extension direction of the slit, and the first direction is also perpendicular to the thickness direction of the substrate. In this way, the laser can perform rapid and continuous frequency sweeping in a wide frequency range.

[0019] In a possible implementation, the first laser region and the first phase shift region are arranged along a first direction, the first direction is perpendicular to the extension direction of the slit, and the first direction is also perpendicular to the thickness direction of the substrate; along the extension direction of the slit, the second phase shift region is located on at least one side of the first phase shift region. In this way, the size of the laser can be reduced.

[0020] In a possible implementation, the first laser region and the first phase shift region are arranged along a first direction, the first direction is perpendicular to the extension direction of the slit, and the first direction is also perpendicular to the thickness direction of the substrate; along the extension direction of the slit, the second phase shift region is located on at least one side of the first laser region. In this way, the size of the laser can be reduced.

[0021] In a possible implementation, the second phase shift region is located on two opposite sides of the first phase shift region. In this way, the size of the laser can be reduced.

[0022] In a possible implementation, the laser further includes a second laser region; the second laser region is located on a side of the first phase shift region away from the first laser region, and there is a gap between the second laser region and the first phase shift region; the grating structure is also located in the second laser region. In this way, the laser has multiple implementations.

[0023] In a possible implementation, the laser further has a gain region, and the gain region is located on a side of the first laser region away from the first phase shift region. In this way, the output power of the laser can be increased.

[0024] In a possible implementation, the laser further includes an electro-absorption modulator, and the electro-absorption modulator is located in the gain region, so that the modulation performance of the laser can be improved.

[0025] In a possible implementation, the laser further includes a sixth electrode, which is located on a side of the second waveguide layer away from the active layer; and the sixth electrode is located in the gain region.

[0026] In a possible implementation, the sixth electrode and the second electrode are an integrated structure, so that current can be injected into the gain region and the first laser region respectively.

[0027] In a possible implementation, the second electrode also extends to the gain region, which simplifies the preparation and packaging.

[0028] In a possible implementation, the laser further includes a curved waveguide, and the curved waveguide is located on a side of the first laser region away from the first phase shift region. In this way, the reflectivity of the output end can be further reduced to suppress the FP effect.

[0029] In a possible implementation, one of the first phase shift region and the second phase shift region is an electrically controlled phase shift region, and the other is a thermally controlled phase shift region. In this way, the electrically controlled phase shift region can change the effective refractive index of the laser by using the carrier scattering effect brought about by current injection, thereby changing the laser wavelength. The thermally controlled phase shift region can change the effective refractive index of the laser by generating a thermo-optical effect through heating by increasing the temperature, thereby changing the laser wavelength.

[0030] In a possible implementation, the first phase shift region includes an electrically controlled phase shift region, and the second phase shift region includes a thermally controlled phase shift region. In this way, the electrically controlled phase shift region can change the effective refractive index of the laser by using the carrier scattering effect brought about by current injection, thereby changing the laser wavelength. The thermally controlled phase shift region can change the effective refractive index of the laser by generating a thermo-optical effect through heating by increasing the temperature, thereby changing the laser wavelength.

[0031] According to a second aspect of the embodiments of the present application, an optical component is provided, comprising a laser as described in any one of the first aspects and a printed circuit board; the laser is electrically connected to the printed circuit board.

[0032] The optical component provided in the second aspect of the embodiment of the present application includes the laser of any one of the first aspects, and its beneficial effects are the same as those of the laser, which will not be repeated here.

[0033] According to a third aspect of an embodiment of the present application, an optical module is provided, comprising an optical receiving component and an optical transmitting component, wherein the optical receiving component receives an optical signal transmitted by the optical transmitting component; the optical receiving component comprises the optical component according to the second aspect.

[0034] The optical module provided in the third aspect of the embodiment of the present application includes the optical component of the second aspect, and its beneficial effects are the same as those of the optical component, which will not be repeated here.

[0035] According to a fourth aspect of an embodiment of the present application, an optical distribution network device is provided, comprising an optical module and an optical fiber as in the third aspect; an optical device is connected to the optical fiber.

[0036] The optical distribution network device provided in the fourth aspect of the embodiment of the present application includes the optical module of the third aspect, and its beneficial effects are the same as the beneficial effects of the optical module, which will not be repeated here.

[0037] According to a fifth aspect of an embodiment of the present application, a passive optical fiber network system is provided, comprising an optical distribution network device, an optical line terminal and an optical network unit as in the fourth aspect; the optical distribution network device connects the optical line terminal and the optical network unit.

[0038] The passive optical fiber network system provided in the fifth aspect of the embodiment of the present application includes the optical distribution network device of the fourth aspect, and its beneficial effects are the same as those of the optical distribution network device, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 A schematic diagram of the structure of a passive optical fiber network system provided in an embodiment of the present application;

[0040] Figure 2 A schematic diagram of the structure of another passive optical fiber network system provided in an embodiment of the present application;

[0041] Figure 3A A schematic diagram of the structure of a laser provided in an embodiment of the present application;

[0042] Figure 3B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0043] Figure 3C A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0044] Figure 4A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0045] Figure 4B for Figure 4A A cross-sectional view along direction A1A2;

[0046] Figure 4C for Figure 4A Another cross-sectional view along direction A1A2;

[0047] Figure 5A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0048] Figure 5B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0049] Figure 6 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0050] Figure 7 A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0051] Fig. 8A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0052] Figure 8B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0053] Figure 8C A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0054] Fig.8D A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0055] Fig. 8E A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0056] Fig.8F A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0057] Fig. 9A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0058] Fig. 9B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0059] Fig. 10A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0060] Fig. 10B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0061] Fig.11A A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0062] Fig. 11B A schematic diagram of the structure of another laser provided in an embodiment of the present application;

[0063] Fig.12 A schematic diagram showing the movement of the band gap position of the Bragg grating when the thermally controlled phase shift region and the electrically controlled phase shift region are working;

[0064] Fig.13 A schematic diagram showing the change of the laser wavelength of the laser;

[0065] Fig.14 A curve diagram showing the change of the effective refractive index of the electrically controlled phase shift region with the injection of current;

[0066] Fig.15A A curve diagram showing the change of temperature in the thermally controlled phase shift zone with the voltage of the heating resistor is shown;

[0067] Fig. 15B A curve diagram showing the change of the effective refractive index in the thermally controlled phase shift region corresponding to the temperature change of the heating resistor voltage is shown.

[0068] Reference numerals

[0069] 1-passive optical fiber network system; 2-optical line terminal; 3-optical distribution network; 4-optical network unit; 5-optical network terminal; 6-wavelength division multiplexer; 10-laser; 100-first distributed Bragg reflector layer; 200-second distributed Bragg reflector layer; 300-third distributed Bragg reflector layer; 400-gain structure; 500-first Fabry-Perot cavity; 600-half-wave coupler; 700-second Fabry-Perot cavity; 11-first laser region; 12-second laser region; 21-first phase shift region; 22-second phase shift region; 31-first isolation slot; 32-second isolation slot; 33-third isolation slot; 41-gain region ;42-bent waveguide;111-first waveguide layer;112-second waveguide layer;113-first confinement layer;114-second confinement layer;101-grating slit;120-active layer;121-bulk waveguide layer;131-grating structure;132-waveguide structure;140-substrate;151-first contact layer;152-second contact layer;153-isolation layer;160-cladding;170-spacer layer;102-anti-reflection high-transmittance film;103-high-reflection film;221-heating structure;210-first electrode;220-second electrode;230-third electrode;240-fourth electrode;250-fifth electrode;260-sixth electrode. DETAILED DESCRIPTION

[0070] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0071] In the following, the terms "second", "first", etc. are used only for convenience of description and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "second", "first", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0072] In addition, in the embodiments of the present application, directional terms such as "up", "down", "left" and "right" may be defined including but not limited to the orientation relative to the schematic placement of the components in the drawings. It should be understood that these directional terms may be relative concepts, which are used for relative description and clarification, and may change accordingly according to changes in the orientation of the components in the drawings.

[0073] In the embodiments of the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. In addition, the term "coupled" can be a direct electrical connection or an indirect electrical connection through an intermediate medium. The term "contact" can be a direct contact or an indirect contact through an intermediate medium.

[0074] In the embodiments of the present application, "and / or" describes the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone, where A and B may be singular or plural. The character " / " generally indicates that the associated objects are in an "or" relationship.

[0075] The embodiment of the present application provides an optical communication network system, which mainly includes at least two optical communication devices and optical fibers connecting the optical communication devices.

[0076] Optical communication network system has become the mainstream communication network system. For example, in the optical communication network system, the access mode of access network (AN) is fiber access (FTTx), which is also called optical access network (OAN). The fiber access modes of optical access network include fiber to the cabinet (FTTCab), fiber to the curb (FTTC), fiber to the building (FTTB) and fiber to the home (FTTH). Alternatively, the optical communication network system can also be used for coherent optical communication or gas detection.

[0077] In some embodiments, the optical communication network system is integrated into an electronic device. The electronic device may include, for example, a server, a switch, an optical network card, and an optical transceiver. The optical communication network system may be integrated into the same electronic device or may be separately integrated into different electronic devices. This embodiment of the application does not limit this, and may be reasonably set according to actual conditions.

[0078] Exemplarily, when a passive optical network (PON) is used as an optical communication network system, the optical communication equipment may include, for example, any one of an optical line terminal (OLT), an optical network unit (ONU) or an optical network terminal (ONT).

[0079] The implementation of this application does not limit the specific types and structures of the optical communication network system and the optical communication equipment, and they can be reasonably set according to actual conditions.

[0080] The optical communication network system is a passive optical fiber network as an example for schematic illustration. Figure 1 As shown, PON1 includes an optical line terminal 2, an optical distribution network (ODN) device 3 and an optical network unit 4.

[0081] Among them, OLT2 is set in the central control station, and ODN3 is set at the user side. ODN3 is used to connect OLT2 and ONU4. The optical devices in OLT2 and ONU4 are used to perform photoelectric conversion and transmission of signals.

[0082] In some embodiments, Figure 1 As shown, PON1 further includes an optical network terminal 5. ONT5 and ONU4 are arranged at different positions on the user side and implement similar functions.

[0083] Among them, ODN3 is composed of an optical splitter (SPL) and optical fibers. The function of the optical splitter is to split one path of light into two paths according to a certain splitting ratio, so as to transmit the two paths of light to different ONU4 / ONT5 respectively. Generally, the more cascaded optical splitters in ODN3, the more times of splitting, and the more paths of light that can be split.

[0084] Exemplarily, OLT2 is arranged at the central control station, and ODN3 is arranged at the user side. ODN3 is used to connect OLT2 and ONU4. The optical modules in OLT2 and ONU4 are used to perform photoelectric conversion and transmission of signals. ONT5 and ONU4 are arranged at different positions on the user side, and the functions realized are similar. It is explained here that the optical module can also be integrated into the above-mentioned optical communication network system.

[0085] The optical module may be integrated into the above-mentioned ONU4 or ONT5, and the optical module may also be integrated into the above-mentioned OLT2.

[0086] Exemplarily, the optical module may include a small form-factor pluggable transceiver (SFP) optical module, an SFP+ optical module, or an XFP optical module, etc. This application does not limit this. For example, the optical module includes an external cavity filter chip.

[0087] In some embodiments, the optical module includes a transmitting optical subassembly (TOSA) and a receiving optical subassembly (ROSA), wherein both the transmitting optical subassembly and the receiving optical subassembly are electrically connected to the printed circuit board.

[0088] Exemplarily, a bi-directional optical subassembly (BOSA) formed by integrating an optical transmitting component and an optical receiving component can be regarded as an optical component, and can also be regarded as the above-mentioned optical module.

[0089] Exemplarily, the optical emission component includes an electro-optical conversion chip and a photodiode (eg, a monitoring photodiode) (MD). The electro-optical conversion chip and the monitoring photodiode are packaged together to form the optical emission component. The monitoring photodiode is used to monitor the optical power output by the laser.

[0090] The electro-optical conversion chip receives the electrical signal carrying the transmission information transmitted by the printed circuit board (PCB), converts the electrical signal into an optical signal, and then outputs the optical signal through an optical device.

[0091] Exemplarily, the light receiving component includes a photoelectric conversion chip and an amplifier. The photoelectric conversion chip and the amplifier are packaged together to form a light receiving component. The photoelectric conversion chip can be, for example, a chip composed of a photodiode (photo diode, PD), a chip composed of a PIN diode (pin diode), or a chip composed of an avalanche photon diode (avalanche photon diode, APD). Among them, the photoelectric conversion chip converts the received optical signal into an electrical signal, and then transmits the electrical signal to the amplifier, the amplifier amplifies the electrical signal, and transmits the amplified electrical signal to a printed circuit board.

[0092] It is explained here that the packaging form of the above-mentioned optical module or optical component is not limited in the embodiments of the present application. Taking the optical component as an example, the optical component can be a coaxial (transistor outline, TO) package. Or, a butterfly package. For example, a box (BOX) with a square shell can be used for packaging. Alternatively, the optical component can also be a chip on board (COB) package.

[0093] In some embodiments, Figure 2 As shown, the passive optical fiber network system 1 further includes a wavelength division multiplexer (WDM) 6. The WDM 6 is located at the light output side of the optical distribution network 3, and the WDM 6 is also located at the light input side of the optical network unit 4 or the optical network terminal 5. The WDM 6 is used to divide the optical signal received from the optical distribution network 3 into multiple optical signals and transmit them to the optical network unit 4 or the optical network terminal 5.

[0094] Based on this, the present application also illustrates a laser, which can be applied to any of the above-mentioned optical communication systems, optical modules, optical components or wavelength division multiplexers.

[0095] It is explained here that the laser may be a laser chip, or a packaged laser chip, or a laser array. The embodiments of the present application do not limit this.

[0096] In some embodiments, a laser is shown, which is applied to a micro electromechanical system (MEMS) vertical cavity surface emitting laser (VCSEL). Figure 3A As shown, the laser 10 mainly includes a first distributed Bragg reflector (distributed bragg reflection, DBR) (hereinafter referred to as the first DBR layer) 100, a second distributed Bragg reflector layer (hereinafter referred to as the second DBR layer) 200, a third distributed Bragg reflector layer (hereinafter referred to as the third DBR layer) 300, an active layer 120 and an electrode. Among them, the electrode is used to provide current to the active layer 120 so that the active layer 120 generates photons, and the laser is output from the end of the third DBR layer 300 away from the first DBR layer 100. Since the active layer 120 of the VCSEL is relatively short, and the laser wavelength is adjusted by using a MEMS system, continuous tunability can be achieved in a large wavelength range. However, since the MEMS system is relatively complex and has limitations on mechanical wear life, its cost is relatively high.

[0097] In some other embodiments, a short cavity distributed Bragg reflector (DBR) laser is shown. Figure 3BAs shown, the laser 10 includes a first DBR layer 100, a gain structure 400, and a second DBR layer 200. The first DBR layer 100 and the second DBR layer 200 account for more than 75% of the size of the laser 10, so continuous wavelength tunability can be achieved in a large range. However, since the short cavity DBR laser needs to be butt-grown passive waveguides during operation, its cost is relatively high.

[0098] In some other embodiments, a short cavity microcavity laser is shown. Figure 3C As shown, the laser 10 includes a first Fabry Perot (FP) cavity 500, a half-wave coupler 600, and a second FP cavity 700. The half-wave coupler 600 couples the first FP cavity 500 and the second FP cavity 700 together. Figure 3C The laser 10 shown is capable of continuous tunability in a small wavelength range and quasi-continuous tunability in a long wavelength range.

[0099] However, the three lasers illustrated above can only achieve the effect of unidirectional wavelength tunability. The laser is widely used in coherent optical communication, wavelength division multiplexing (WDM) system, tunable diode laser absorption spectroscopy (TDLAS) system and U-band digital quick optical distribution network (DQ ODN) equipment and other fields. On the one hand, the light source required in the above-mentioned field is a wavelength continuously adjustable light source to achieve the adjustment of the light source to the corresponding wavelength for operation. In other words, the laser used in the above-mentioned field needs to meet the requirement of having a light source with continuously adjustable wavelength. On the other hand, the laser in the working process avoids mode hopping within a wide wavelength range, for example: tunable diode laser absorption spectroscopy (TDLAS), and needs to be swept at a faster speed, for example, the sweeping speed reaches the nanosecond (ns) level. When the laser 10 is used in the above-mentioned field, it needs to be used in combination with a thermoelectric cooler (TEC) to achieve bidirectional change of the laser wavelength. For example, taking a distributed feedback (DFB) laser as an example, in an optical component or optical module integrated with a distributed feedback laser, it is usually necessary to connect the laser to a thermoelectric cooler and integrate it into the optical component or optical module, and control the temperature through the thermoelectric cooler to achieve a bidirectional change in the laser wavelength. However, adding a thermoelectric cooler will increase the cost and power consumption of the optical component or optical module, and the speed of changing the laser wavelength through the thermoelectric cooler limits the thermal relaxation oscillation process, reducing the performance of the laser 10. In other words, the three types of lasers illustrated above can only achieve a bidirectional change in the laser wavelength when used in conjunction with a thermoelectric cooler, resulting in increased cost and power consumption.

[0100] Based on this, in order to achieve bidirectional change of laser wavelength without increasing the cost of the laser, the embodiment of the present application illustrates a laser, such as Figure 4A and Figure 4B As shown, Figure 4B for Figure 4A The cross-sectional view along the A1A2 direction. Figure 4A As shown, the laser 10 comprises a first laser region 11 , a first phase shift region 21 and a second phase shift region 22 , and there is a gap between the first laser region 11 , the first phase shift region 21 and the second phase shift region 22 .

[0101] Exemplarily, the interval between the first laser region 11 and the first phase shift region 21 is referred to as a first isolation groove 31 , and the interval between the first phase shift region 21 and the second phase shift region 22 is referred to as a second isolation groove 32 .

[0102] like Figure 4B As shown, the laser 10 mainly includes a substrate 140 , a first waveguide layer 111 , an active layer 120 , a second waveguide layer 112 and a grating structure 131 , wherein the grating structure 131 includes a plurality of grating slits 101 .

[0103] That is to say, the grating structure 131 is located in the first laser region 11 .

[0104] like Figure 4B As shown, the laser 10 mainly includes a substrate 140 , a first waveguide layer 111 disposed on the substrate 140 , an active layer 120 , a second waveguide layer 112 , and a grating structure 131 .

[0105] That is to say, Figure 4B As shown, along the third direction z, the first waveguide layer 111 , the active layer 120 , the second waveguide layer 112 and the grating structure 131 are stacked in sequence. The third direction z is the thickness direction of the substrate 140 .

[0106] The grating structure 131 is located on a side of the second waveguide layer 112 away from the active layer 120 .

[0107] For example, Figure 4B As shown, the substrate 140 may be located on a side of the first waveguide layer 111 away from the second waveguide layer 112 .

[0108] At this time, the grating structure 131 is located on the side of the second waveguide layer 112 away from the substrate 140. In other words, the grating structure 131 is located on the side of the active layer 120 away from the substrate 140.

[0109] In this way, the preparation process of the laser 10 is convenient, simple, and easy to implement.

[0110] Or, for example, Figure 4C As shown, the substrate 140 may also be located on a side of the second waveguide layer 112 away from the first waveguide layer 111 .

[0111] At this time, the grating structure 131 is located between the second waveguide layer 112 and the substrate 140. That is, the grating structure 131 is located between the active layer 120 and the substrate 140.

[0112] That is, the grating structure 131 may be located on the side of the waveguide layer (the first waveguide layer 111 and the second waveguide layer 112) away from the substrate 140. Alternatively, the grating structure 131 may also be located between the waveguide layer (the first waveguide layer 111 and the second waveguide layer 112) and the substrate 140.

[0113] In this way, the threshold of the laser 10 can be lowered and the efficiency of the laser 10 can be improved.

[0114] It is explained here that the embodiment of the present application does not limit the location of the grating structure 131 , and it is only necessary to ensure that the first waveguide layer 111 , the active layer 120 , the second waveguide layer 112 and the grating structure 131 are stacked in sequence.

[0115] For convenience, the following is Figure 4B The illustrated grating structure 131 is located on a side of the waveguide layer away from the substrate 140 for illustration.

[0116] Exemplarily, the material of the substrate 140 may include a semiconductor doped with an N-type material or a P-type material.

[0117] The material of the substrate 140 may include, for example, gallium arsenide (GaAs). For example, the substrate 140 may be doped with silicon (Si) material.

[0118] As shown in FIG4B , the first waveguide layer 111 is disposed on the substrate 140 . That is, the first waveguide layer 111 is disposed on the surface of the substrate 140 .

[0119] Exemplarily, the first waveguide layer 111 may be an N-type waveguide layer doped with an N-type material. Alternatively, the first waveguide layer 111 may also be a P-type waveguide layer doped with a P-type material.

[0120] For example, the material of the first waveguide layer 111 includes aluminum gallium indium arsenide (AlGaInAs) or indium gallium arsenide phosphide (InGaAsP).

[0121] The function of the first waveguide layer 111 is to limit the optical field and the electric field respectively, concentrate the current, increase the current density, and further improve the light emission uniformity of the laser 10 .

[0122] Continue to refer Figure 4B The active layer 120 is disposed on a side of the first waveguide layer 111 away from the substrate 140 .

[0123] That is, the active layer 120 is disposed on a surface of the first waveguide layer 111 away from the substrate 140 .

[0124] The active layer 120 may also be referred to as a light-emitting region. The active layer 120 is used to generate photons under the action of electric current, and constitutes the light-emitting region of the laser 10 .

[0125] Exemplarily, the active layer 120 includes at least one quantum well layer and at least one quantum barrier layer, and the quantum well layers and the quantum barrier layers are alternately stacked.

[0126] The material of the quantum well layer includes aluminum gallium indium arsenide (AlGaInAs) or indium gallium arsenide phosphide (InGaAsP). The material of the quantum barrier layer includes aluminum gallium indium arsenide (AlGaInAs) or indium gallium arsenide phosphide (InGaAsP). The quantum well layer material and the quantum barrier layer material have different aluminum contents.

[0127] The embodiment of the present application does not limit the aluminum doping content of the active layer 120 and the number of alternately grown layers, which can be reasonably set according to actual needs.

[0128] In some embodiments, Figure 4B As shown, the laser 10 further includes a bulk waveguide layer 121. The bulk waveguide layer 121 is located between the first waveguide layer 111 and the second waveguide layer 112, and the bulk waveguide layer 121 is disposed in the same layer as the active layer 120, and the refractive index of the bulk waveguide layer 121 material is greater than the refractive index of the first waveguide layer 111 material and the second waveguide layer 112 material.

[0129] The bulk waveguide layer 121 is located in the first phase shift region 21 and the second phase shift region 22 .

[0130] Exemplarily, the material of the bulk waveguide layer 121 may include quaternary compound semiconductor materials such as InGaAsP or AlGaInAs.

[0131] In this way, the bulk waveguide layer 121 does not generate gain due to its material characteristics and can reduce loss.

[0132] In other embodiments, Figure 5A As shown, the active layer 120 is also located in the first phase shift region 21 and the second phase shift region 22 .

[0133] That is to say, Figure 5A As shown, the first waveguide layer 111 , the active layer 120 and the second waveguide layer 112 are all located in the first laser region 11 , the first phase shift region 21 and the second phase shift region 22 .

[0134] In this way, the laser 10 is simple to prepare and easy to implement.

[0135] Regarding the grating structure 131, Figure 5A As shown, the grating structure 131 is disposed on a side of the second waveguide layer 112 away from the substrate 140 .

[0136] That is, the grating structure 131 is disposed on the surface of the second waveguide layer 112 away from the substrate 140 .

[0137] like Figure 5A As shown, the grating structure 131 includes a plurality of grating slits 101. The plurality of grating slits 101 are arranged at intervals along a first direction x. The first direction x is perpendicular to the extension direction y of the grating slits 101. In other words, the extension direction of the grating slits 101, the first direction x, and the third direction z are all perpendicular. For the convenience of illustration, the extension direction of the grating slits 101 is referred to as the second direction y. In other words, the first direction x, the second direction y, and the third direction z are all perpendicular.

[0138] In some embodiments, the grating structure 131 includes a Bragg grating.

[0139] Exemplarily, along the third direction z, the size of the grating structure 131 is greater than 40 nm. In other words, the thickness of the grating structure 131 is greater than 40 nm. In other words, the grating structure 131 may include a grating structure 131 with a larger coupling coefficient.

[0140] In this way, the bandgap width of the grating structure 131 can be increased, thereby increasing the wavelength tuning range of the laser 10 .

[0141] Continue to refer Figure 5A The second waveguide layer 112 is disposed on a side of the active layer 120 away from the substrate 140 .

[0142] That is, the second waveguide layer 112 is disposed on the surface of the active layer 120 away from the substrate 140 .

[0143] Exemplarily, the second waveguide layer 112 may be an N-type waveguide layer doped with an N-type material. Alternatively, the second waveguide layer 112 may also be a P-type waveguide layer doped with a P-type material. This embodiment of the present application does not limit this.

[0144] For example, the material of the second waveguide layer 112 includes aluminum gallium indium arsenide (AlGaInAs) or indium gallium arsenide phosphide (InGaAsP).

[0145] It is explained here that the type of material doped into the second waveguide layer 112 is different from the type of material doped into the first waveguide layer 111 .

[0146] It is explained here that one of the first waveguide layer 111 and the second waveguide layer 112 is an N-type waveguide layer and the other is a P-type waveguide layer. This embodiment of the present application does not limit this, and can be reasonably set according to actual conditions, as long as the first waveguide layer 111 and the second waveguide layer 112 are doped with different types of materials.

[0147] The function of the second waveguide layer 112 is to limit the optical field and the electric field respectively, concentrate the current, increase the current density, and further improve the light emission uniformity of the laser 10 .

[0148] For example, Figure 5B As shown, the first waveguide layer 111 includes a separated confinement heterostructure waveguide layer (seperate confinement heterostructure, SCH) and a first confinement layer 113 .

[0149] For example, Figure 5B As shown, the first confinement layer 113 is located on the side of the SCH layer of the first waveguide layer 111 away from the active layer 120. That is, the first confinement layer 113 is located between the SCH layer of the first waveguide layer 111 and the substrate 140.

[0150] For example, the first confinement layer 113 may be doped with an N-type material, or may be doped with a P-type material, which is not limited in the present embodiment.

[0151] For example, the material of the first confinement layer 113 may include AlGaInAs or InGaAsP. Exemplarily, the aluminum content of the material of the first confinement layer 113 and the material of the SCH layer is different.

[0152] For example, Figure 5B As shown, the second waveguide layer 112 includes a SCH layer and a second confinement layer 114 .

[0153] The second confinement layer 114 is located on the side of the SCH layer of the second waveguide layer 112 away from the active layer 120 . The second confinement layer 114 is located between the grating structure 131 and the SCH layer of the second waveguide layer 112 .

[0154] For example, the second confinement layer 114 may be doped with an N-type material, or may be doped with a P-type material, which is not limited in the present embodiment.

[0155] For example, the material of the second confinement layer 114 may include AlGaInAs or InGaAsP.

[0156] In some embodiments, Figure 6 As shown, the laser 10 further includes a waveguide structure 132, and the grating structure 131 and the waveguide structure 132 are arranged in sequence along a first direction x. The first direction x is perpendicular to the third direction z.

[0157] In some embodiments, Figure 6 As shown, the laser 10 further includes a cladding 160. The cladding 160 is disposed on a side of the grating structure 131 away from the substrate 140.

[0158] Exemplarily, the material of the cladding layer 160 is also filled in the grating slits 101 of the grating structure 131 .

[0159] like Figure 6As shown, the first isolation groove 31 and the second isolation groove 32 extend from the surface of the laser 10 to the surface of the cladding 160. In some embodiments, the first isolation groove 31 and the second isolation groove 32 may also extend into the cladding 160, or penetrate the cladding 160. The embodiment of the present application is not limited to this, and it is only necessary to separate the first laser region 11, the first phase shift region 21, and the second phase shift region 22.

[0160] For example, Figure 4C As shown, the grating structure 131 may be located between the cladding layer 160 and the spacer layer 170. Alternatively, illustratively, the grating structure 131 may also be located between the first waveguide layer 111 and the cladding layer 160.

[0161] It is explained here that the structure of the laser 10 can be distinguished by the different doping materials and compositions of different layers included in the laser 10 .

[0162] Continue to refer Figure 6 In some embodiments, the laser 10 further includes a first electrode 210 , a second electrode 220 , a third electrode 230 , a fourth electrode 240 and a fifth electrode 250 .

[0163] like Figure 6 As shown, the first electrode 210 is located on the side of the first waveguide layer 111 away from the active layer 120. That is, the first electrode 210 is located on the side of the substrate 140 away from the active layer 120. The first electrode 210 is located in the first laser region 11 and the first phase shift region 21.

[0164] The second electrode 220, the third electrode 230, the fourth electrode 240 and the fifth electrode 250 are all located on the side of the second waveguide layer 112 away from the active layer 120. In other words, the second electrode 220, the third electrode 230, the fourth electrode 240 and the fifth electrode 250 are all located on the side of the grating structure 131 away from the active layer 120.

[0165] The second electrode 220 is located in the first laser region 11 , the third electrode 230 is located in the first phase shift region 21 , and the fourth electrode 240 and the fifth electrode 250 are located in the second phase shift region 22 .

[0166] Exemplarily, the second electrode 220, the third electrode 230 and the fourth electrode 240 are connected to the same power electrode. For example, the first electrode 210 is used as the negative electrode, the second electrode 220, the third electrode 230 and the fourth electrode 240 are used as the positive electrode, and the fifth electrode 250 is used as the negative electrode. The implementation of this application does not limit this, and it can be reasonably set according to the actual situation. It only needs to satisfy that the power electrode connected to the first electrode 210 is different from the power electrode connected to the second electrode 220 and the third electrode 230, and the power electrode connected to the second electrode 220 is the same as the power electrode connected to the third electrode 230. It is explained here that the fourth electrode 240 and the fifth electrode 250 are connected to the positive electrode and the negative electrode respectively. The embodiment of this application does not limit this, and it only needs to ensure that the power electrodes connected to the fourth electrode 240 and the fifth electrode 250 are different.

[0167] In the embodiment of the present application, the first laser region 11 is used to generate laser light, and the first phase shift region 21 and the second phase shift region 22 are used to adjust the wavelength of the laser light.

[0168] Regarding the first laser region 11 of the laser 10, illustratively, the first electrode 210 and the second electrode 220 are connected to the positive and negative electrodes of the power supply respectively, and the current is input to the active layer 120 through the positive and negative electrodes, and electrons and holes are injected into the active layer 120. At this time, the electrons and holes in the active layer 120 recombine to generate photons. At the same time, a particle number inversion is formed in the active layer 120, that is, the particles in the low-energy valence band are excited to the high-energy conduction band, so that the number of particles in the high-energy conduction band can be greater than the number of particles in the low-energy valence band. When the current is continuously injected, the electrons in the high-energy conduction band transition to the low-energy valence band, and stimulated radiation light amplification is formed in the active layer 120. When stimulated radiation occurs, the photons are reflected back and forth in the active layer 120, and stimulated radiation is generated with the stimulated particles. The light amplification process is repeated continuously, so that the photons are enhanced, and finally a laser is formed, which is transmitted along the first direction X to the first phase shift region 21 and the second phase shift region 22. In addition, the grating structure 131 of the grating structure 131 can make the formed laser light be reflected in a specific direction. For example, the grating structure 131 of the grating structure 131 can reflect only light of one wavelength to reduce the spectrum width of the laser 10.

[0169] Regarding the first phase shift region 21 and the second phase shift region 22 of the laser 10, in the embodiment of the present application, the first phase shift region 21 and the second phase shift region 22 are respectively an electrically controlled phase shift region and a thermally controlled phase shift region. Exemplarily, the first phase shift region 21 is an electrically controlled phase shift region, and the second phase shift region 22 is a thermally controlled phase shift region. Or, exemplarily, the first phase shift region 21 is a thermally controlled phase shift region, and the second phase shift region 22 is an electrically controlled phase shift region. The embodiment of the present application does not limit this, and it is only necessary to ensure that one of the first phase shift region 21 and the second phase shift region 22 is an electrically controlled phase shift region, and the other is a thermally controlled phase shift region.

[0170] For example, the current in the electrically controlled phase shift region is transmitted in the third direction y, and the current in the thermally controlled phase shift region is transmitted along the surface of the laser 10 .

[0171] For the convenience of illustration, in the embodiment of the present application, the first phase shift region 21 is an electrically controlled phase shift region, and the second phase shift region 22 is a thermally controlled phase shift region.

[0172] At this time, the first isolation groove 31 is used to achieve electrical isolation between the first laser region 11 and the first phase shift region 21. In other words, the first isolation groove 31 is used to achieve electrical isolation between the first laser region 11 and the electrically controlled phase shift region. The second isolation groove 32 is used to achieve thermal isolation between the first phase shift region 21 and the second phase shift region 22. In other words, the second isolation groove 32 is used to achieve thermal isolation between the electrically controlled phase shift region and the thermally controlled phase shift region.

[0173] Regarding the first phase shift region 21 of the laser 10, illustratively, the first electrode 210 and the third electrode 230 are connected to the positive and negative electrodes of the power supply, respectively, and the carriers (electrons and holes) brought by the current injection generate a plasma scattering effect in the waveguide, so that the effective refractive index of the laser changes, and then the phase is adjusted, so that the wavelength of the laser changes. For example, the effective refractive index of the laser in the first phase shift region 21 is reduced, and the wavelength is reduced.

[0174] Exemplarily, the first phase shift region 21 is a portion of a waveguide of the laser 10 .

[0175] Regarding the second phase shift region 22 of the laser 10, illustratively, the fourth electrode 240 and the fifth electrode 250 are connected to the positive and negative electrodes of the power supply respectively, and the carriers (electrons and holes) brought by the current injection generate a thermo-optical effect, and the temperature of the thermally controlled phase shift region (the second phase shift region 22) is changed by heating, which affects the waveguide temperature of the laser 10, so that the effective refractive index of the laser in the second phase shift region 22 changes, and then the phase is adjusted, so that the laser wavelength changes. For example, the effective refractive index of the laser increases, and the wavelength increases.

[0176] In some embodiments, Figure 6 As shown, the laser 10 further includes a heating structure 221, and the heating structure 221 is located in the second phase shift region 22. Exemplarily, the heating structure 221 is located on a side of the active layer 120 away from the substrate 140.

[0177] Exemplarily, the heating structure 221 includes a metal film layer. For example, the heating structure 221 includes a surface metal heating film.

[0178] Alternatively, illustratively, the heating structure 221 includes a heater. For example, the second phase shift region 22 includes a buried heater.

[0179] In this way, the buried heater can improve the tuning efficiency of the second phase shift region 22 to the laser wavelength.

[0180] Continue to refer Figure 6 The fourth electrode 240 and the fifth electrode 250 are respectively disposed on two opposite sides of the heating structure 221 and connected to the heating structure 221 to pass current through the heating structure 221 .

[0181] Exemplarily, the first phase shift region 21 reduces the laser wavelength, and the second phase shift region 22 increases the laser wavelength.

[0182] In this way, bidirectional change of the laser wavelength can be achieved by using the first phase shift region 21 and the second phase shift region 22. Therefore, the laser 10 provided in the embodiment of the present application does not need to be used in conjunction with a thermoelectric cooler.

[0183] In some embodiments, Figure 6 As shown, the laser 10 further includes an anti-reflective (AR) film 102 and a high reflective film (HR) 103. Figure 6 As shown, along the first direction x, the anti-reflection high-transmittance film 102 and the high-reflection film 103 are respectively disposed on two opposite sides of the laser 10 .

[0184] The transmittance of the anti-reflection high-transmittance film 102 is greater than 95%, and the reflectivity of the high-reflection film 103 is greater than 90%.

[0185] like Figure 6 As shown, the first phase shift region 21 and the second phase shift region 22 are located between the first laser region 11 and the high reflective film 103 , and resonance is generated between the first phase shift region 21 and the second phase shift region 22 , thereby generating the FP effect.

[0186] Exemplarily, the anti-reflection high-transmittance film 102 is disposed on the light-emitting side of the laser 10. In this way, the transmittance of the emitted light can be increased, while eliminating the FP effect in the area outside the first phase shift region 21 and the second phase shift region 22.

[0187] For example, Figure 6 As shown, the laser 10 further includes a first contact layer 151, a second contact layer 152 and an isolation layer 153. The first contact layer 151 is disposed in the first laser region 11, the second contact layer 152 is disposed in the electrically controlled phase shift region, and the isolation layer 153 is disposed in the thermally controlled phase shift region. There is a gap between the first contact layer 151, the second contact layer 152 and the isolation layer 153. For example, the first contact layer 151 and the second contact layer 152 are spaced apart by a first isolation groove 31, and the second contact layer 152 and the isolation layer 153 are spaced apart by a second isolation groove 32.

[0188] It is explained here that if the first phase shift region 21 is an electrically controlled phase shift region and the second phase shift region 22 is a thermally controlled phase shift region, the second contact layer 152 is located in the first phase shift region 21 and the isolation layer 153 is located in the second phase shift region 22. If the first phase shift region 21 is a thermally controlled phase shift region and the second phase shift region 22 is an electrically controlled phase shift region, the second contact layer 152 is located in the second phase shift region 22 and the isolation layer 153 is located in the first phase shift region 21. The following description is made by taking the second contact layer 152 being located in the second phase shift region 22 and the isolation layer 153 being located in the first phase shift region 21 as an example.

[0189] like Figure 6 As shown, the first contact layer 151 , the second contact layer 152 and the isolation layer 153 are all disposed on the side of the second waveguide layer 112 away from the substrate 140 .

[0190] That is to say, Figure 6 As shown, the first contact layer 151 is located between the second electrode 220 and the cladding 160 , the second contact layer 152 is located between the third electrode 130 and the cladding 160 , and the isolation layer 153 is located between the heating structure 221 and the cladding 160 .

[0191] The first contact layer 151 and the second contact layer 152 are respectively used to achieve ohmic contact between the metal material and the semiconductor material, thereby increasing the carrier injection concentration and reducing the resistance.

[0192] For example, the materials of the first contact layer 151 and the second contact layer 152 may include InGaAs. The material of the isolation layer 153 may include silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ).

[0193] In some embodiments, Figure 6 As shown, the laser 10 further includes a spacer layer 170 . The spacer layer 170 is disposed between the grating structure 131 and the second waveguide layer 112 .

[0194] The spacer layer 170 is used to space the grating structure 131 and the second waveguide layer 112 .

[0195] In some embodiments, Figure 7 As shown, the first laser region 11 , the first phase shift region 21 and the second phase shift region 22 are arranged in sequence along the first direction x.

[0196] In the laser 10 provided in the embodiment of the present application, the first laser region 11, the first phase shift region 21 and the second phase shift region 22 have no obvious boundaries and can be distinguished according to the second electrode 220, the third electrode 230 and the heating structure 221. That is, along the thickness direction z of the laser 10, that is, along the third direction z, the portion covered by the second electrode 220 is the first laser region 11, the portion covered by the third electrode 230 is the first phase shift region 21, and the portion covered by the heating structure 221 is the second phase shift region 22.

[0197] It is explained here that the size of the laser 10 is determined by the sizes of the first laser region 11 , the first phase shift region 21 and the second phase shift region 22 in the first direction x.

[0198] In other embodiments, Fig. 8A As shown, the first laser region 11 and the first phase shift region 21 are arranged along the first direction x, and along the extension direction y of the slit 101 , ie, along the second direction y, the second phase shift region 22 is located on at least one side of the first phase shift region 21 .

[0199] For example, Fig. 8A As shown, along the second direction y, the second phase shift region 22 is located at one side of the first phase shift region 21 .

[0200] Or, for example, Figure 8B As shown, along the second direction y, the second phase shift region 22 is located on two opposite sides of the first phase shift region 21 .

[0201] At this time, if Fig. 8A and Figure 8B In the illustrated laser 10 , since the first phase shift region 21 and the second phase shift region 22 are arranged along the second direction y, the temperature change caused by the thermally controlled phase shift region and the electric injection caused by the electrically controlled phase shift region are both applied to the same section of the waveguide structure 132 .

[0202] The first isolation groove 31 is located between the first laser region 11 and the first phase shift region 21 , and the second isolation groove 32 is located between the first phase shift region 21 and the second phase shift region 22 .

[0203] In some other embodiments, Figure 8C As shown, the first laser region 11 and the first phase shift region 21 are arranged along the first direction x, and along the extension direction y of the slit 101 , ie, along the second direction y, the second phase shift region 22 is located on at least one side of the first laser region 11 .

[0204] For example, Figure 8C As shown, along the second direction y, the second phase shift region 22 is located on one side of the first laser region 11 .

[0205] Or, for example, Fig.8DAs shown, along the second direction y, the second phase shift region 22 is located on two opposite sides of the first laser region 11 .

[0206] At this time, if Figure 8C and Fig.8D In the illustrated laser 10 , since the first laser region 11 and the second phase shift region 22 are arranged along the second direction y, the temperature change caused by the thermally controlled phase shift region or the electric injection caused by the electrically controlled phase shift region is applied to the first laser region 11 .

[0207] For example, when the first phase shift region 21 is an electrically controlled phase shift region and the second phase shift region 22 is a thermally controlled phase shift region, the thermally controlled phase shift region controls the temperature of the first laser region 11. Alternatively, when the first phase shift region 21 is a thermally controlled phase shift region and the second phase shift region 22 is an electrically controlled phase shift region, the electrically controlled phase shift region controls the electrical injection of the first laser region 11.

[0208] The first isolation groove 31 is located between the first laser region 11 and the first phase shift region 21 , and the second isolation groove 32 is located between the first laser region 11 and the second phase shift region 22 .

[0209] In some other embodiments, Fig. 8E As shown, the first laser region 11 and the first phase shift region 21 are arranged along the first direction x, and the second phase shift region 22 is located on at least one side of the first laser region and the first phase shift region 21 along the extension direction y of the slit 101 , that is, along the second direction y.

[0210] For example, Fig. 8E As shown, along the second direction y, the second phase shift region 22 is located on one side of the first laser region and the first phase shift region 21 .

[0211] Or, for example, Fig.8F As shown, along the second direction y, the second phase shift region 22 is located on two opposite sides of the first laser region and the first phase shift region 21 .

[0212] At this time, if Fig. 8E and Fig.8F In the illustrated laser 10 , the temperature change caused by the thermally controlled phase shift region or the electric injection caused by the electrically controlled phase shift region are both applied to the first laser region 11 and the waveguide structure 132 .

[0213] The first isolation groove 31 is located between the first laser region 11 and the first phase shift region 21 , and the second isolation groove 32 is located between the first laser region 11 and the second phase shift region 22 and between the first phase shift region 21 and the second phase shift region 22 .

[0214] In this way, the size of the laser 10 can be reduced, that is, the package size of the laser 10 can be reduced.

[0215] In some other embodiments, Fig. 9AAs shown, the laser 10 further includes a second laser region 12 , and the second laser region 12 is located on a side of the first phase region away from the first laser region 11 .

[0216] That is, along the first direction x, the first laser region 11 and the second laser region 12 are located on two opposite sides of the first phase shift region 21 and the second phase shift region 22 .

[0217] At this time, the laser 10 has a first laser region 11 , a second laser region 12 , a first phase shift region 21 and a second phase shift region 22 , and there are intervals between the first laser region 11 , the second laser region 12 , the first phase shift region 21 and the second phase shift region 22 .

[0218] For example, Fig. 9A As shown, the interval between the first laser region 11 and the first phase shift region 21 is called the first isolation groove 31, the interval between the first phase shift region 21 and the second phase shift region 22 is called the second isolation groove 32, and the interval between the second phase shift region 22 and the second laser region 12 is called the third isolation groove 33.

[0219] The grating structure 131 of the grating structure 131 is located in the first laser region 11 and the second laser region 12 , and the waveguide structure 132 of the grating structure 131 is located in the first phase shift region 21 and the second phase shift region 22 .

[0220] For example, Fig. 9A As shown, the first laser region 11 , the first phase shift region 21 , the second phase shift region 22 and the second laser region 12 are arranged in sequence along the first direction x.

[0221] At this time, if Fig. 9A As shown, a first isolation groove 31 is provided between the first laser region 11 and the first phase shift region 21 , a second isolation groove 32 is provided between the first phase shift region 21 and the second phase shift region 22 , and a third isolation groove 33 is provided between the second phase shift region 22 and the second laser region 12 .

[0222] Or, for example, Fig. 8A The structure of the schematic laser 10 is illustrated.

[0223] like Fig. 9B As shown, the first laser region 11 , the first phase shift region 21 and the second laser region 12 are arranged along the first direction x. Along the extension direction y of the slit 101 , ie, along the second direction y, the second phase shift region 22 is located at one side of the first phase shift region 21 .

[0224] At this time, if Fig. 9B As shown, a first isolation groove 31 is provided between the first laser region 11 and the first phase shift region 21 , a second isolation groove 32 is provided between the first phase shift region 21 and the second phase shift region 22 , and a third isolation groove 33 is provided between the first phase shift region 21 and the second laser region 12 .

[0225] It is explained here that, for the laser 10 having the first laser region 11 and the second laser region 12 , the light-emitting side of the laser 10 is the side provided with the anti-reflection high-transmittance film 102 .

[0226] The present application does not limit the distribution positions of the first laser region 11 , the first phase shift region 21 , and the second phase shift region 22 , and they can be reasonably set according to actual conditions.

[0227] In some embodiments, Fig. 10A As shown, the laser 10 further includes a gain region 41. The gain region 41 is located on a side of the first laser region 11 away from the first phase shift region 21.

[0228] That is to say, the gain region 41 is located between the anti-reflection and high-transmittance film 102 and the first laser region 11 .

[0229] Exemplarily, the laser 10 further includes an electro-absorption modulator, which is located in the gain region 41 .

[0230] In this way, adding the gain region 41 can increase the output power of the laser 10 , and the electro-absorption modulator can improve the modulation performance of the laser 10 .

[0231] For example, Fig. 10A As shown, the laser 10 further includes a sixth electrode 260. The sixth electrode 260 and the second electrode 220 are an integral structure.

[0232] The sixth electrode 260 is located on a side of the second waveguide layer 112 away from the active layer 120 .

[0233] That is, the sixth electrode 260 is located on the same side as the second electrode 220 and the third electrode 230 .

[0234] like Fig. 10A As shown, the sixth electrode 260 is located in the gain region 41 .

[0235] That is, the sixth electrode 260 and the first electrode 210 are connected to the positive electrode and the negative electrode of the power supply respectively, so as to apply current to the gain region 41 .

[0236] Or, for example, Fig. 10B As shown, the second electrode 220 also extends to the gain region 41 .

[0237] That is, the gain region 41 and the first laser region 11 share one electrode (the second electrode 220 ).

[0238] In some embodiments, Fig.11A As shown, the laser further comprises a curved waveguide 42. The curved waveguide 42 is located on a side of the first laser region 11 away from the first phase shift region 21.

[0239] For example, Fig.11A As shown, the curved waveguide 42 is located between the anti-reflection and high-transmittance film 102 and the gain region 41 .

[0240] Or, for example, Fig. 11B As shown, the curved waveguide 42 is located between the anti-reflection and high-transmittance film 102 and the first laser region 11 .

[0241] That is to say, in Figure 8A-8F The laser 10 shown is provided with only the gain region 41. Alternatively, only the curved waveguide 42 may be provided. Alternatively, both the gain region 41 and the curved waveguide 42 may be provided. The present application embodiment does not limit this, and it can be reasonably provided according to the actual situation.

[0242] In this way, adding the curved waveguide 42 can further reduce the reflectivity at the output end, thereby suppressing the FP effect and improving the performance of the laser 10 .

[0243] Below Figure 7 Taking the laser 10 shown as an example, the bidirectional wavelength adjustment of the laser 10 provided in the embodiment of the present application is described.

[0244] In the laser 10 provided in the embodiment of the present application, a first phase shift region 21 and a second phase shift region 22 are provided between the first laser region 11 and the high reflection film 103, and a cavity mode is generated due to the resonance between the first laser region 11 and the high reflection film 103. Since an anti-reflection high-transmittance film 102 is provided on one side of the first laser region 11, the length of the phase region cavity mode in the laser 10 is only determined by the length of the first laser region 11, the first phase shift region 21 and the second phase shift region 22. When the laser 10 is continuously swept, it is necessary to make only one cavity mode within the bandwidth of the entire grating structure 131, that is, the free spectrum range (FSR) of the cavity mode is smaller than the bandgap width of the grating structure 131. The FSR generated by the phase shift region (the first phase shift region 21 or the second phase shift region 22) and the grating structure 131 is determined by formula (1):

[0245]

[0246] Among them, n g is the group velocity of the laser 10 waveguide, L p is the length of the phase shift region, L g is the effective length of the grating structure 131, and C is the speed of light. At this time, the phase shift region will produce a band gap within the grating band gap width, and the position of the band gap is determined by the phase in the resonant cavity of the laser 10. The phase of the resonant cavity is determined by formula (2):

[0247]

[0248] Among them, λ 0 is the central wavelength of the grating structure 131, and Δn is the change in the effective refractive index of the laser in the first phase shift region 21 or the second phase shift region 22. It can be seen from formula (2) that the phase is mainly determined by the length of the phase region and the effective refractive index of the mode, and the thermally controlled phase shift region and the electrically controlled phase shift region adjust the phase by changing the effective refractive index to achieve the tuning of the wavelength of the laser 10.

[0249] Fig.12 The simulation shows the movement of the band gap position of the Bragg grating when the thermally controlled phase shift region and the electrically controlled phase shift region are working. Fig.12 The dashed line indicates that the electrically controlled phase shift region is Fig.12 Indicated by the solid line. Fig.12 It shows that changing the wavelength effective refractive index brings about a change in spectral transmittance, which is reflected by the shift of the band gap. Fig.12 It can be seen that when the thermally controlled phase shift region is working, the effective refractive index of the laser increases, which causes the center of the band gap to redshift (i.e., move to a longer wavelength). When the electrically controlled phase shift region is working, the effective refractive index of the laser decreases, which causes the center of the band gap to blueshift (i.e., move to a shorter wavelength).

[0250] Fig.13 The simulation shows the change of the laser wavelength. The movement of the band gap center will cause a corresponding change in the resonance center of the laser 10, and the corresponding laser wavelength will also change. Fig.13 The effect of laser wavelength change of laser 10 in one phase change cycle is simulated. Fig.13 It can be seen that in the process of the intracavity phase changing from 0 to 2π, the laser wavelength of the laser 10 moves within the grating bandgap, and no mode hopping occurs within the entire bandwidth, which means that the wavelength, i.e., the frequency change of the laser 10 is continuously adjustable within one tuning cycle. Therefore, the frequency sweep range of the laser 10 provided in the embodiment of the present application is determined by the bandgap width of the grating.

[0251] Fig.14 The simulation shows the effective refractive index change curve of the electrically controlled phase shift zone with the injection current. According to formula (2), when the length of the phase shift zone is 50 μm, the required effective refractive index change Δn eff When the current required to produce the corresponding effective refractive index change is 30 mA, since the operating voltage of the laser 10 material generally does not exceed 2 V, the maximum power consumption of the electrically controlled phase shift region is about 60 mW. It can be seen that the power consumption of the laser 10 provided in the embodiment of the present application is relatively low.

[0252] Fig.15A The simulation shows how the temperature of the thermally controlled phase shift zone changes with the voltage of the heating resistor. Fig. 15B The simulation shows the change in effective refractive index of the thermally controlled phase shift region as the temperature of the heating resistor voltage changes. Fig.15A The figure shows the temperature change with voltage when the thermal control phase shift region includes the titanium / platinum heating metal film with a thickness of 200nm (corresponding to a resistance of about 90Ω). Fig. 15B It can be seen that when the temperature change is about 60°C, the corresponding power consumption is 32mW according to Ohm's law. Compared with the power consumption of thermoelectric coolers (about hundreds of milliwatts to watts), the laser 10 provided in the embodiment of the present application can reduce power consumption by more than one order of magnitude.

[0253] The laser provided in the embodiment of the present application, the laser 10 is divided into a first laser region 11, a first phase shift region 21 and a second phase shift region 22, and there is a gap between the first laser region 11, the first phase shift region 21 and the second phase shift region 22. The laser 10 includes a first waveguide layer 111, an active layer 120, a second waveguide layer 112 and a grating structure 131 which are stacked. Among them, the grating structure 131 includes a grating structure 131 and a waveguide structure 132, and the grating structure 131 includes a plurality of grating slits 101. The grating structure 131 is located in the first laser region 11, and the waveguide structure 132 is located in the first phase shift region 21 and the second phase shift region 22. Among them, the first laser region 11 is used to generate laser light, and the first phase shift region 21 and the second phase shift region 22 are used to adjust the wavelength of the laser light.

[0254] In the laser 10 provided in the embodiment of the present application, the grating structure 131 of the laser 10 is located in the first laser region 11, which can make the laser generated by the first laser region 11 reflect only light of one wavelength, so as to reduce the spectral width of the laser 10. At the same time, the waveguide structure 132 of the laser 10 is located in the first phase shift region 21 and the second phase shift region 22, which can provide the grating bandgap width, thereby forming a band gap, and the wavelength of the laser can be regulated by adjusting the current of the first phase shift region 21 and the second phase shift region 22.

[0255] The first laser region 11, the first phase shift region 21, and the second phase shift region 22 are all provided with an isolation structure, and the laser wavelength can be bidirectionally regulated by using the first phase shift region 21 and the second phase shift region 22, respectively, without using a thermoelectric cooler to regulate the laser 10. Therefore, the solution of the embodiment of the present application can reduce the power consumption and cost of the laser 10.

[0256] In addition, the preparation of the laser 10 provided in the embodiment of the present application is compatible with the preparation process of the existing laser, thereby reducing the preparation cost.

[0257] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A laser, characterized in that: It has a first laser region, a first phase shift region and a second phase shift region; there is a gap between the first laser region, the first phase shift region and the second phase shift region; The laser comprises: A first waveguide layer, an active layer and a second waveguide layer are stacked in sequence; the first waveguide layer and the second waveguide layer are both located in the first laser region, the first phase shift region and the second phase shift region; the active layer is located in the first laser region; A grating structure is located on a side of the second waveguide layer away from the active layer; the grating structure comprises a plurality of grating slits, and the grating structure is located in the first laser region; The first laser region is used to generate laser light, and the first phase shift region and the second phase shift region are used to respectively control the increase or decrease of the laser wavelength.

2. The laser according to claim 1, characterized in that The laser further comprises a waveguide structure; the waveguide structure is located on a side of the second waveguide layer away from the active layer and is arranged in the same layer as the grating structure; the waveguide structure is located in at least one of the first phase shift region and the second phase shift region.

3. The laser according to claim 1 or 2, characterized in that: The active layer is also located in the first phase shift region and the second phase shift region.

4. The laser according to claim 1 or 2, characterized in that: The laser further comprises a bulk waveguide layer; the bulk waveguide layer is located between the first waveguide layer and the second waveguide layer and is arranged in the same layer as the active layer; the bulk waveguide layer is located in the first phase shift region and the second phase shift region.

5. The laser according to any one of claims 1 to 4, characterized in that: The grating structure comprises a Bragg grating.

6. The laser according to any one of claims 1 to 5, characterized in that: The laser further includes a first electrode, a second electrode, a third electrode, a fourth electrode and a fifth electrode; the first electrode is located on a side of the first waveguide layer away from the active layer, and is located in the first laser region and the first phase shift region; the second electrode, the third electrode, the fourth electrode and the fifth electrode are all located on a side of the second waveguide layer away from the active layer; the second electrode is located in the first laser region, the third electrode is located in the first phase shift region, and the fourth electrode and the fifth electrode are located in the second phase shift region.

7. The laser according to any one of claims 1 to 6, characterized in that: The laser further comprises a heating structure, wherein the heating structure is located in the second phase shift region.

8. The laser according to any one of claims 1 to 7, characterized in that: The first laser region, the first phase shift region and the second phase shift region are arranged in sequence along a first direction, the first direction is perpendicular to an extension direction of the grating slit, and the first direction is also perpendicular to a thickness direction of the first waveguide layer.

9. The laser according to any one of claims 1 to 8, characterized in that: The first laser region and the first phase shift region are arranged along a first direction, the first direction is perpendicular to the extension direction of the grating slit, and the first direction is also perpendicular to the thickness direction of the first waveguide layer; Along the extending direction of the gate slit, the second phase shift region is located at least on one side of the first phase shift region; and / or, Along the extending direction of the grating slit, the second phase shift region is located on at least one side of the first laser region.

10. The laser according to claim 9, characterized in that The second phase shift region is located on two opposite sides of the first phase shift region.

11. The laser according to any one of claims 1 to 10, characterized in that: The laser further comprises a second laser region; the second laser region is located on a side of the first phase shift region away from the first laser region, and there is a gap between the second laser region and the first phase shift region; the grating structure is also located in the second laser region.

12. The laser according to any one of claims 1 to 11, characterized in that: The laser also has a gain region; the gain region is located on a side of the first laser region away from the first phase shift region.

13. The laser according to claim 12, characterized in that The laser also includes an electro-absorption modulator located in the gain region.

14. The laser according to claim 12 or 13, characterized in that The laser further includes a sixth electrode, which is located on a side of the second waveguide layer away from the active layer; the sixth electrode is located in the gain region.

15. The laser according to claim 12 or 13, characterized in that The second electrode also extends to the gain region.

16. The laser according to any one of claims 1 to 15, characterized in that: The laser further comprises a bent waveguide; the bent waveguide is located on a side of the first laser region away from the first phase shift region.

17. An optical component, characterized in that: It comprises the laser according to any one of claims 1 to 16 and a printed circuit board; the laser is electrically connected to the printed circuit board.

18. An optical module, characterized in that: It comprises a light receiving component and a light emitting component, wherein the light receiving component receives the light signal transmitted by the light emitting component; the light emitting component comprises the light component as claimed in claim 17.

19. An optical distribution network device, characterized in that: It comprises the optical module as claimed in claim 18 and an optical fiber; the optical device is connected to the optical fiber.

20. A passive optical fiber network system, characterized in that: It comprises the optical distribution network device, an optical line terminal and an optical network unit as claimed in claim 19; the optical distribution network device connects the optical line terminal and the optical network unit.

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