Light emitting diode and display panel

Abstract

The invention provides a light emitting diode and a display panel. The light-emitting diode comprises a substrate, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent electrode and a first bonding pad, a first pad body and a second pad body are stacked to form the first bonding pad, and the area of the orthographic projection of the second pad body on the substrate is larger than that of the orthographic projection of the first pad body on the substrate. Compared with a traditional bonding pad, a part of the surface area between the first pad body and the second pad body is increased due to the area difference, the obtained surface area is larger, then the contact area between the first bonding pad and welding flux is increased, and the welding strength is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light emitting diode and a display panel. Background Art

[0002] In the traditional micro-LED display (Micro LED Display) structure, as the size of the LED decreases, the size of the pad will also be reduced exponentially, which will reduce the bonding force between the LED and the screen substrate, increase the probability of the LED falling off, and ultimately cause the number of bad pixels on the Micro-LED display to increase exponentially. Summary of the invention

[0003] In view of this, the present application provides a light emitting diode and a display panel to improve the problem of reduced bonding force between the light emitting diode and the driving circuit substrate.

[0004] The technical solution adopted by this application to solve the above technical problems is:

[0005] In a first aspect, an embodiment of the present application provides a light emitting diode, comprising:

[0006] substrate;

[0007] An N-type semiconductor layer is disposed on the substrate;

[0008] A light emitting layer is provided on a side of the N-type semiconductor layer away from the substrate;

[0009] A P-type semiconductor layer, disposed on a side of the light-emitting layer away from the substrate;

[0010] A transparent electrode is provided on a side of the P-type semiconductor layer away from the substrate;

[0011] A first pad is provided on a side of the transparent electrode away from the substrate;

[0012] Among them, the first welding pad includes a first disk body, a second disk body and a support body, the first disk body is arranged on the side of the transparent electrode away from the substrate, the second disk body is arranged on the side of the first disk body away from the substrate, the support body is arranged between the first disk body and the second disk body, the area of ​​the orthographic projection of the second disk body on the substrate is larger than the area of ​​the orthographic projection of the first disk body on the substrate, and the area of ​​the orthographic projection of the second disk body on the substrate is not smaller than the area of ​​the orthographic projection of the support body on the substrate.

[0013] Optionally, along the direction from the first disk body to the second disk body, the diameter of the first disk body gradually decreases, and the diameter of the second disk body gradually increases.

[0014] Optionally, along the direction from the first disk to the second disk, the diameter of the support body remains unchanged, and the area of ​​the orthographic projection of the support body on the substrate is smaller than the areas of the orthographic projections of the first disk and the second disk on the substrate.

[0015] Optionally, a plurality of the second trays are provided, and the plurality of the second trays are stacked in sequence in a direction away from the substrate.

[0016] Optionally, along a direction away from the substrate, the maximum diameters of the plurality of second disks stacked in sequence gradually increase.

[0017] Optionally, a plurality of the first pads are provided, and the plurality of the first pads are stacked in sequence in a direction away from the substrate, and an area of ​​a positive projection of the plurality of the first pads stacked in sequence on the substrate gradually increases.

[0018] Optionally, along a direction away from the substrate, two adjacent layers of the first pads are arranged in a staggered manner, or central axes of a plurality of the first pads coincide with each other.

[0019] Optionally, the light-emitting diode also includes an insulating layer, which is arranged on a side of the transparent electrode away from the substrate and has a through hole, wherein the through hole exposes a portion of the transparent electrode, the first disk body is arranged in the through hole and in contact with the transparent electrode, and the second disk body is arranged on a side of the insulating layer away from the substrate.

[0020] Optionally, a groove is formed on a surface of the second disk body away from the first disk body.

[0021] Optionally, a surface of the second disk body facing away from the first disk body is provided with an alloy coating.

[0022] Optionally, a plurality of conical retaining walls are provided on a side of the insulating layer away from the substrate, and the plurality of conical retaining walls are arranged around the edge of the through hole.

[0023] Optionally, the roughness of the surface of the second disk body ranges from 0.5 um to 5 um, or the roughness of the surface of the second disk body ranges from 10 nm to 100 nm.

[0024] In a second aspect, an embodiment of the present application provides a display panel, including:

[0025] Driving circuit substrate;

[0026] According to the light emitting diode of the first aspect, the light emitting diode is connected to the driving circuit substrate.

[0027] In summary, due to the adoption of the above technical solution, this application has at least the following beneficial effects:

[0028] The embodiments of the present application provide a light-emitting diode and a display panel, which utilize a first disk body, a support body, and a second disk body to be stacked to form a first soldering pad, and the area of ​​the orthographic projection of the second disk body on the substrate is larger than the area of ​​the orthographic projection of the first disk body on the substrate, and is not smaller than the area of ​​the orthographic projection of the support body on the substrate, so that there is an extra surface area between the first disk body and the second disk body due to the area difference. Compared with the traditional first soldering pad, the surface area that can be obtained is larger, thereby increasing the contact area between the first soldering pad and the solder, thereby improving the welding strength. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of a display panel provided in an embodiment of the present application;

[0030] Figure 2 A schematic diagram of the structure of a light emitting diode provided in an embodiment of the present application;

[0031] Figure 3 for Figure 2 A schematic structural diagram of a first solder pad in a light emitting diode provided;

[0032] Figure 4 for Figure 2 A schematic structural diagram of another first solder pad in the provided light emitting diode;

[0033] Figure 5 For multiple Figure 3 A schematic diagram of the structure of the first pad stack provided;

[0034] Figure 6 A schematic diagram of the structure of another light emitting diode provided in an embodiment of the present application;

[0035] Figure 7 for Figure 6 A schematic structural diagram of a first solder pad in a light emitting diode is provided.

[0036] Description of reference numerals:

[0037] 1. Driving circuit substrate; 2. Solder; 3. Light-emitting diode; 31. Substrate; 32. N-type semiconductor layer; 33. Light-emitting layer; 34. P-type semiconductor layer; 35. Transparent electrode; 36. Reflective layer; 37. Insulating layer; 371. Through hole; 38. First solder pad; 381. First disk body; 382. Second disk body; 3821. Groove; 383. Support body; 39. Second solder pad; 40. Conical retaining wall. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application.

[0039] In the description of this application, it should be understood that the words "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0040] In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration." Any embodiment described in this application as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.

[0041] See also Figure 1 An embodiment of the present application provides a display panel, including a driving circuit substrate 1 and a light-emitting diode 3, wherein the light-emitting diode 3 is connected to the driving circuit substrate 1 through a solder 2.

[0042] Among them, see Figure 2 The light emitting diode 3 includes a substrate 31, an N-type semiconductor layer 32, a light emitting layer 33, a P-type semiconductor layer 34, a transparent electrode 35 and a first pad 38. The N-type semiconductor layer 32 is disposed on the substrate 31. The light emitting layer 33 is disposed on a side of the N-type semiconductor layer 32 away from the substrate 31. The P-type semiconductor layer 34 is disposed on a side of the light emitting layer 33 away from the substrate 31. The transparent electrode 35 is disposed on a side of the P-type semiconductor layer 34 away from the substrate 31. The first pad 38 is disposed on a side of the transparent electrode 35 away from the substrate 31.

[0043] For further information, see Figure 3 The first solder pad 38 includes a first disk body 381 and a second disk body 382. The first disk body 381 is arranged on the side of the transparent electrode 35 away from the substrate 31, and the second disk body 382 is arranged on the side of the first disk body 381 away from the substrate 31. The area of ​​the orthographic projection of the second disk body 382 on the substrate 31 is larger than the area of ​​the orthographic projection of the first disk body 381 on the substrate 31.

[0044] The technical solution provided in the present application utilizes a first disk body 381 and a second disk body 382 to be stacked to form a first soldering pad 38, and makes the area of ​​the orthographic projection of the second disk body 382 on the substrate 31 larger than the area of ​​the orthographic projection of the first disk body 381 on the substrate 31, so that there is an extra surface area between the first disk body 381 and the second disk body 382 due to the area difference. Compared with the traditional first soldering pad 38, the surface area that can be obtained is larger, thereby increasing the contact area between the first soldering pad 38 and the solder 2, thereby improving the welding strength.

[0045] Furthermore, the first solder pad 38 also includes a support body 383, which is arranged between the first disk body 381 and the second disk body 382, ​​and the area of ​​the orthographic projection of the second disk body 382 on the substrate 31 is not less than the area of ​​the orthographic projection of the support body 383 on the substrate 31, so that there will be an extra surface area between the support body 383 and the first disk body 381 due to the area difference, so as to increase the contact area between the first solder pad 38 and the solder and improve the welding strength.

[0046] In one example, along the direction from the first disk 381 to the second disk 382, ​​the diameter of the support body 383 remains unchanged, the area of ​​the orthographic projection of the second disk 382 on the substrate 31 is larger than the area of ​​the orthographic projection of the support body 383 on the substrate 31, and the area of ​​the orthographic projection of the first disk 381 on the substrate 31 is also larger than the area of ​​the orthographic projection of the support body 383 on the substrate 31, so that the support body 383 can not only play the role of supporting the first disk 381 and the second disk 382, ​​but also cooperate with the first disk 381 and the second disk 382 to form an inwardly buckled space between the first disk 381 and the second disk 382. The solder is filled in the space between the first disk 381 and the second disk 382, ​​which will not only improve the welding strength due to the increase in the contact area of ​​the solder, but also because the solder is embedded between the first disk 381 and the second disk 382, ​​the first disk 381 and the second disk 382 will form an embedded fixed structure for this part of the solder, further improving the welding strength.

[0047] In another example, the area of ​​the orthographic projection of the second disk body 382 on the substrate 31 is equal to the area of ​​the orthographic projection of the support body 383 on the substrate 31, so that the support body 383 can not only support the first disk body 381 and the second disk body 382, ​​but also cooperate with the first disk body 381 to form an inward-facing space, thereby increasing the contact area of ​​the solder and the inherent strength of the pad.

[0048] In some embodiments, the first disk 381 is in the shape of a normal truncated cone, and the second disk 382 is in the shape of an inverted truncated cone, so that the radius of the first disk 381 gradually decreases as the first disk 381 faces the second disk 382, ​​and the radius of the second disk 382 gradually decreases as the second disk 382 faces the first disk 381, so that the sum of the side areas of the first disk 381 and the second disk 382 increases compared to the side area of ​​the cylinder, thereby increasing the contact area between the first pad 38 and the solder 2. In addition, because the first disk 381 and the second disk 382 are inwardly shrunk toward each other, the line connecting the side surfaces of the first disk 381 and the second disk 382 has a certain angle, and when the solder 2 is welded to the first pad 38, part of the solder 2 will fill the space at the angle formed by the first disk 381 and the second disk 382, ​​forming a certain embedded structure, thereby improving the connection strength between the solder 2 and the first pad 38.

[0049] It should be noted that the thickness of the first plate 381 and the second plate 382 can be the same or different, which is not limited here, and the first plate 381 and the second plate 382 can be coaxially arranged or not coaxially arranged, that is, staggered, which is not limited here.

[0050] In some embodiments, the maximum diameter of the second disk 382 is greater than the maximum diameter of the first disk 381 , so that the contact area between the second disk 382 and the solder 2 is increased, thereby improving the welding strength.

[0051] In some embodiments, the first plate 381 is made of a material with good conductivity and tightly combined with the transparent electrode 35, such as a titanium-gold alloy, to ensure a stable connection between the first plate 381 and the transparent electrode 35. The second plate 382 is made of a material that is easy to weld, such as gold or silver, to ensure good welding performance between the second plate 382 and the solder 2.

[0052] In some embodiments, see Figure 4 The second disk 382 is provided with a plurality of second disks 382, ​​and the plurality of second disks 382 are sequentially stacked in a direction away from the substrate 31, so as to further increase the contact area between the first pad 38 and the solder 2, and then enhance the soldering strength. And because the plurality of second disks 382 are sequentially stacked in a direction away from the substrate 31, the floor space occupied by the light emitting diode 3 on the plane is not affected, that is, the requirement of reducing the area of ​​the light emitting diode 3 can still be maintained.

[0053] Furthermore, along the direction away from the substrate 31, the maximum diameters of the multiple second disks 382 stacked in sequence gradually increase, so that the second disks 382 not only increase the contact area by increasing their own diameters, but also enable the multiple second disks 382 to form a stepped shape, so that the extra area between two adjacent second disks 382 can also contact the solder 2, further increasing the overall contact area between the first solder pad 38 and the solder 2, thereby improving the welding strength.

[0054] In some embodiments, see Figure 5 , there are multiple first pads 38. The multiple first pads 38 are stacked in sequence in a direction away from the substrate 31, and the area of ​​the positive projection of the multiple first pads 38 stacked in sequence on the substrate 31 gradually increases, so that steps are formed between adjacent pads through the area difference, and the step part is the increased surface area, which increases the contact area between the solder 2 and the multiple first pads 38. Based on the consideration of the process, the number of first pads 38 is not more than five, and the diameter difference between adjacent first pads 38 ranges from 0.5 to 1um.

[0055] Furthermore, along the direction away from the substrate 31, the first pads 38 of two adjacent layers are staggered, further increasing the step area formed between the adjacent first pads 38, so that the step area that the solder 2 can contact is larger, thereby improving the welding strength. It should be noted that the plurality of first pads 38 adjacent to each other can be staggered in the same direction, or staggered in two opposite directions, without limitation.

[0056] In some embodiments, the central axes of the plurality of first solder pads 38 coincide along a direction away from the substrate 31, and the area difference between the first disk body 381 and the second disk body 382 of two adjacent first solder pads 38 is utilized to increase the contact area between adjacent solder pads and the solder, and improve the stability of the stacking of the plurality of first solder pads 38.

[0057] In some embodiments, the edge of the first pad 38 farthest from the substrate 31 is bent in a direction away from the substrate 31, further increasing the contact area between the solder 2 and the first pad 38, and because it is the first pad 38 farthest from the substrate 31, that is, the last pad in the stacking direction, the bending of the edge of the first pad 38 will not affect the connection of other first pads 38. Further, in order to ensure the feasibility of forming the first plate body 381 and the second plate body 382 in the first pad 38, the edge bending of the first pad 38 is specifically the edge of the side of the second plate body 382 away from the first plate body 381 is bent in a direction away from the substrate 31, ensuring that the bending of the second plate body 382 will not affect the forming of the first plate body 381. Of course, in this embodiment, the first plate body 381 and the second plate body 382 are integrally formed, deposited and patterned in the same deposition process.

[0058] In some embodiments, among the plurality of first pads 38, the first pad 38 in contact with the transparent electrode 35, that is, the portion of the first plate body 381 of the first first pad 38 in the stacking direction close to the transparent electrode 35 is made of a material that is closely combined with the transparent electrode 35, such as a titanium-tungsten alloy. The portion of the first plate body 381 in the first first pad 38 close to the second plate body 382, ​​the second plate body 382, ​​and the plurality of pads located between the first and last first pads 38 are all made of materials with excellent conductive properties, such as copper or silver. The first plate body 381 of the last first pad 38 in the stacking direction and the portion of the second plate body 382 close to the first plate body 381 are all made of copper or silver, and the portion of the second plate body 382 of the last first pad 38 far from the first plate body 381 is made of a material that is easy to weld and anti-oxidation, such as gold or palladium. It is ensured that the plurality of first pads 38 can not only ensure a stable connection with the transparent electrode 35, but also provide good conductive properties and welding properties.

[0059] In some embodiments, see Figure 6, the light emitting diode 3 further includes an insulating layer 37. The insulating layer 37 is disposed on a side of the transparent electrode 35 away from the substrate 31 and is provided with a through hole 371. The through hole 371 exposes a portion of the transparent electrode 35, the first disk 381 is disposed in the through hole 371 and in contact with the transparent electrode 35, and the second disk 382 is disposed on a side of the insulating layer 37 away from the substrate 31. By disposing the first disk 381 in the through hole 371 and in contact with the transparent electrode 35, the insulating layer 37 can further stabilize the fixation of the first disk 381 and can also ensure that the first disk 381 can be electrically connected to the transparent electrode 35. The second plate body 382 is arranged on a side that is insulated and away from the substrate 31, and the orthographic projection area of ​​the second plate body 382 on the substrate 31 is larger than the area of ​​the through hole 371 and completely covers the through hole 371, so that a step is formed on the connecting surface between the first plate body 381 and the second plate body 382, ​​and a part of the insulating layer 37 is embedded in the step, thereby improving the connection tightness between the first solder pad 38 and the transparent electrode 35.

[0060] For further information, see Figure 7 A groove 3821 is formed on the surface of the second plate 382 away from the first plate 381, which further increases the surface area of ​​the second plate 382, ​​thereby increasing the contact area between the second plate 382 and the solder 2, and then improving the welding strength.

[0061] Furthermore, the surface of the second plate 382 facing away from the first plate 381 is provided with an alloy coating (not shown in the figure), such as gold-tin alloy, gold-germanium alloy, etc., to reduce the welding temperature and reduce the influence of thermal stress on the light-emitting diode 3.

[0062] In some embodiments, a plurality of conical retaining walls 40 are provided on one side of the insulating layer 37 away from the substrate 31. The plurality of conical retaining walls 40 are arranged around the edge of the through hole 371. By defining a space for accommodating the solder 2 by using the conical retaining walls 40, the solder 2 can fully contact and solder with the first pad 38 located in the space enclosed by the conical retaining walls 40. In addition, the structure of the conical retaining walls 40 is also conducive to the flow of the solder 2.

[0063] Further, for any of the aforementioned embodiments, the light emitting diode 3 further includes a second pad 39, and the second pad 39 has the same structure as the first pad 38, and the specific structure of the second pad 39 is not repeated here. It should be noted that the orthographic projection area of ​​the N-type semiconductor layer 32 on the substrate 31 is larger than the orthographic projection area of ​​the P-type semiconductor layer 34 on the substrate 31, and is also larger than the orthographic projection area of ​​the light emitting layer 33 on the substrate 31, so that the side surface of the P-type semiconductor layer 34 and the side surface of the light emitting layer 33 cooperate with the top surface of the N-type semiconductor layer 32 to define a gap, and the second pad 39 is arranged in the gap and contacts with the side of the N-type semiconductor layer 32 away from the substrate 31. As for the insulating layer 37, it also extends to the N-type semiconductor layer 32 and is located at the gap. The insulating layer 37 also has a through hole 371 in the gap portion. The second pad 39 contacts the N-type semiconductor layer 32 through the through hole 371 in the gap portion and covers a portion of the insulating layer 37. Preferably, although the structure of the second solder pad 39 is the same as that of the first solder pad 38, the size of the second solder pad 39 can be larger than the first solder pad 38, especially in height, the second solder pad 39 is larger than the first solder pad 38, so that the second solder pad 39 can be flush with the first solder pad 38, which facilitates the welding of the driving circuit substrate 1 and the two pads.

[0064] Furthermore, a plurality of conical retaining walls 40 may be arranged around the edge of the through hole 371 at the notch position, and their functions are the same as those of the conical retaining walls 40 arranged at the position of the first pad 38, which will not be described in detail. Preferably, the conical retaining wall 40 may be arranged only between the first pad 38 and the second pad 39, which can save materials and guide the flow of the solder 2.

[0065] In some embodiments, the light-emitting diode 3 also includes a reflective layer 36, which is disposed on the side of the transparent electrode 35 away from the substrate 31 and has a hole therein like the insulating layer 37. The hole is coaxial with the through hole 371 to expose a portion of the transparent electrode 35 to facilitate contact between the first pad 38 and the transparent electrode 35.

[0066] In some embodiments, the surface of the second plate 382 in the first pad 38 is provided with a plurality of micron-scale grooves (not shown in the figure) to increase the surface area of ​​the second plate 382, ​​thereby increasing the contact area between the second plate 382 and the solder 2, thereby improving the welding strength. As for the second pad 39, its structure is the same as that of the first pad 38, and will not be repeated here.

[0067] Furthermore, a micro cavity (not shown) is formed in the first pad 38 to improve the elasticity of the first pad 38, help absorb stress during welding, and improve welding reliability. Similarly, the structure of the second pad 39 is the same as that of the first pad 38, and will not be repeated here.

[0068] In some embodiments, the surface of the second disk 382 can be roughened to increase the contact area between the surface of the second disk 382 and the solder. In one example, the roughening process can be performed by laser etching or chemical etching to form a micron-level concave-convex structure, and the roughness of the surface of the second disk 382 after the roughening process can reach 0.5um to 5um, such as the roughness of the surface of the second disk 382 can be 0.5um, 3um or 5um. In another example, the roughening process can be performed by plasma treatment to form a nano-level rough surface with a roughness range of 10nm to 100nm. In this example, the roughness of the surface of the second disk 382 can be 10nm, 100nm or 50nm.

[0069] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0070] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more application embodiments, in the above description of the embodiments of the present application, multiple features are sometimes merged into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of the present application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

Claims

1. A light emitting diode, characterized in that: include: substrate; An N-type semiconductor layer is disposed on the substrate; A light emitting layer is provided on a side of the N-type semiconductor layer away from the substrate; A P-type semiconductor layer, disposed on a side of the light-emitting layer away from the substrate; A transparent electrode is provided on a side of the P-type semiconductor layer away from the substrate; A first pad is provided on a side of the transparent electrode away from the substrate; Among them, the first welding pad includes a first disk body, a second disk body and a support body, the first disk body is arranged on the side of the transparent electrode away from the substrate, the second disk body is arranged on the side of the first disk body away from the substrate, the support body is arranged between the first disk body and the second disk body, the area of ​​the orthographic projection of the second disk body on the substrate is larger than the area of ​​the orthographic projection of the first disk body on the substrate, and the area of ​​the orthographic projection of the second disk body on the substrate is not smaller than the area of ​​the orthographic projection of the support body on the substrate.

2. The light emitting diode according to claim 1, characterized in that Along the direction from the first disk body to the second disk body, the diameter of the first disk body gradually decreases, and the diameter of the second disk body gradually increases.

3. The light emitting diode according to claim 1, characterized in that Along the direction from the first disk to the second disk, the diameter of the support body remains unchanged, and the area of ​​the orthographic projection of the support body on the substrate is smaller than the areas of the orthographic projections of the first disk and the second disk on the substrate.

4. The light emitting diode according to claim 1, characterized in that There are a plurality of second trays, and the plurality of second trays are stacked in sequence in a direction away from the substrate.

5. The light emitting diode according to claim 4, characterized in that Along the direction away from the substrate, the maximum diameters of the plurality of second disks stacked in sequence gradually increase.

6. The light emitting diode according to claim 1, characterized in that There are a plurality of the first pads, and the plurality of the first pads are stacked in sequence in a direction away from the substrate, and the areas of the orthographic projections of the plurality of the first pads stacked in sequence on the substrate gradually increase.

7. The light emitting diode according to claim 6, characterized in that Along the direction away from the substrate, the first pads of two adjacent layers are arranged in a staggered manner, or central axes of a plurality of the first pads coincide with each other.

8. The light emitting diode according to claim 1, characterized in that The light emitting diode further comprises an insulating layer, which is arranged on a side of the transparent electrode away from the substrate and has a through hole, wherein a portion of the transparent electrode is exposed through the through hole, and the first disk is arranged in the through hole and in contact with the transparent electrode.

9. The light emitting diode according to claim 8, characterized in that A groove is formed on a surface of the second disk body away from the first disk body.

10. The light emitting diode according to claim 8, characterized in that A plurality of conical retaining walls are arranged on a side of the insulating layer away from the substrate, and the plurality of conical retaining walls are arranged around the edge of the through hole.

11. The light emitting diode according to any one of claims 1 to 10, characterized in that: The surface of the second disk body facing away from the first disk body is provided with an alloy coating.

12. The light emitting diode according to any one of claims 1 to 10, characterized in that: The roughness of the surface of the second disk body ranges from 0.5um to 5um, or the roughness of the surface of the second disk body ranges from 10nm to 100nm.

13. A display panel, characterized in that: include: Driving circuit substrate; The light emitting diode according to any one of claims 1 to 12, wherein the light emitting diode is connected to the driving circuit substrate.

Images