Mass transfer device and mass transfer method

Abstract

The invention provides a mass transfer device and a mass transfer method, and relates to the technical field of display. The mass transfer device comprises a transfer substrate and an irradiation light source, the transfer substrate comprises a bonding side and a light transmitting side which are oppositely arranged, and the light emitting direction of the irradiation light source faces the light transmitting side. The light-emitting device to be transferred is bonded to the transfer substrate through the bonding side, the light-emitting device is transferred to the target substrate under the action of the irradiation light source, the irradiation light source is used for irradiating the light-transmitting side of the transfer substrate, and the transfer substrate releases the light-emitting device located on the bonding side after absorbing light energy. According to the mass transfer device, the irradiation light source composed of at least one xenon lamp is adopted to provide light energy for the transfer substrate, the single irradiation area can be flexibly adjusted, the number of single transfer light-emitting devices is increased, the transfer efficiency is improved, meanwhile, rare gas such as KrF and Cl2 does not need to be used as a laser medium, and the production cost is effectively reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a mass transfer device and a mass transfer method. Background Art

[0002] In the manufacturing process of Micro Light Emitting Diode (Micro-LED), the Micro Light Emitting Diode needs to be transferred and bonded to a temporary substrate to achieve a corresponding array arrangement, and then the Micro Light Emitting Diode needs to be bonded to a driving circuit.

[0003] Laser-assisted transfer technology is a commonly used transfer technology. It usually uses excimer laser as the light source. The laser passes through the optical lens part and focuses on the transfer substrate interface to achieve polymer ablation / ablation on the substrate. The generated gas promotes the transfer of micro-LEDs. However, the irradiation range of the laser generated by the excimer laser is usually 1cm 2 -2cm 2 , it is necessary to repeatedly scan to provide light energy for the transfer substrate, and the transfer efficiency is low. In addition, the laser wavelength generated by the excimer laser is usually in the UV range (248nm-355nm), and expensive rare gases (KrF, Cl2) are required as laser media, and the production cost is relatively high. Summary of the invention

[0004] In order to at least overcome the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a mass transfer device and a mass transfer method.

[0005] In a first aspect, an embodiment of the present application provides a mass transfer device, the mass transfer device comprising a transfer substrate and an irradiation light source, wherein the transfer substrate comprises a bonding side and a light-transmitting side arranged opposite to each other, and the light-emitting direction of the irradiation light source is toward the light-transmitting side;

[0006] The transfer substrate is used to adhere the light-emitting device to be transferred through the bonding side, and transfer the light-emitting device to the target substrate under the action of the irradiation light source;

[0007] The irradiation light source is used to irradiate the light-transmitting side of the transfer substrate to release the light-emitting device located on the bonding side of the transfer substrate, wherein the irradiation light source includes at least one xenon lamp.

[0008] In a possible implementation, the transfer substrate includes a transparent substrate, and a light absorbing layer, a light releasing layer, and a temporary bonding layer stacked in sequence in a direction perpendicular to the plane where the transparent substrate is located, wherein the side where the temporary bonding layer is located is the bonding side, and the side where the light absorbing layer is located is the light transmitting side;

[0009] The temporary bonding layer is used to bond the light emitting device, wherein the orthographic projection of the temporary bonding layer on the transparent substrate coincides with the orthographic projection of the light emitting device on the transparent substrate;

[0010] The light absorbing layer is used to absorb light energy and convert the light energy into heat energy and transfer it to the light releasing layer;

[0011] The light-releasing layer is used to decompose into gas under the action of the thermal energy, so as to transfer the light-emitting device located on the temporary bonding layer to the target substrate.

[0012] In a possible implementation, the material of the transparent substrate includes double-polished glass, double-polished sapphire and double-polished quartz glass.

[0013] In a possible implementation, the material of the light absorbing layer includes a wide-band light absorbing material, and the thickness of the light absorbing layer is 0.8um-1.2um in a direction perpendicular to the plane where the transparent substrate is located;

[0014] The material of the light release layer includes polycarbonate, polyethersulfone, polyphosphate and polyphthalic anhydride, and the thickness of the light release layer is 0.8um-1.2um in the direction perpendicular to the plane where the transparent substrate is located;

[0015] The temporary bonding layer is made of a material including highly viscous polycarbonate or polymethyl methacrylate. In a direction perpendicular to the plane where the transparent substrate is located, the temporary bonding layer has a thickness of 5 μm-7 μm.

[0016] In a second aspect, the present application further provides a mass transfer method, which is applied to a mass transfer device, wherein the mass transfer device includes a transfer substrate and an irradiation light source, wherein the transfer substrate includes a bonding side and a light-transmitting side arranged opposite to each other, and the method includes:

[0017] transferring the light-emitting device to be transferred to the bonding side of the transfer substrate;

[0018] The light source is used to illuminate the light-transmitting side of the transfer substrate to transfer the light-emitting device on the transfer substrate to a target substrate, wherein the light source includes at least one xenon lamp.

[0019] In a possible implementation, before the step of transferring the light-emitting device to be transferred to the bonding side of the transfer substrate, the method further includes a step of manufacturing the transfer substrate, the step including:

[0020] Providing a transparent substrate;

[0021] A light absorbing layer is formed on one side of the transparent substrate, wherein the thickness of the light absorbing layer is 0.8 μm-1.2 μm in a direction perpendicular to the plane where the transparent substrate is located;

[0022] A light releasing layer is formed on a side of the light absorbing layer away from the transparent substrate, wherein the thickness of the light releasing layer is 0.8 μm-1.2 μm in a direction perpendicular to the plane where the transparent substrate is located;

[0023] A temporary bonding layer is formed on a side of the light-releasing layer away from the transparent substrate, wherein the thickness of the temporary bonding layer is 5 μm-7 μm in a direction perpendicular to the plane where the transparent substrate is located.

[0024] In a possible implementation manner, before the step of manufacturing the light absorbing layer on one side of the transparent substrate, the method further includes a step of pre-treating the transparent substrate, the step comprising:

[0025] Ultrasonic cleaning of the transparent substrate is performed using acetone, anhydrous ethanol and deionized water respectively;

[0026] The cleaned transparent substrate is heated to remove water vapor on the surface of the transparent substrate.

[0027] In a possible implementation, the step of transferring the light-emitting device to be transferred to the bonding side of the transfer substrate includes:

[0028] Moving the transfer substrate to bond the light emitting device to the temporary bonding layer, wherein the light emitting device is located on a temporary substrate;

[0029] An excimer laser is used to irradiate a side of the light emitting device away from the temporary bonding layer, so as to separate the light emitting device from the temporary substrate, and then transfer the light emitting device to the temporary bonding layer.

[0030] In a possible implementation, after the step of transferring the light-emitting device to be transferred to the bonding side of the prefabricated transfer substrate, the method further includes:

[0031] The transfer substrate is etched to remove the temporary bonding layer around the light emitting device, so that the orthographic projection of the light emitting device on the transparent substrate coincides with the orthographic projection of the temporary bonding layer on the transparent substrate.

[0032] In a possible implementation, the step of irradiating the light-transmitting side of the transfer substrate with the irradiation light source to transfer the light-emitting device on the transfer substrate to the target substrate includes:

[0033] Moving the transfer substrate and orienting the bonding side of the transfer substrate toward the target substrate;

[0034] Adjusting the transfer distance between the transfer substrate and the target substrate, aligning and leveling the transfer substrate, and fixing the transfer substrate;

[0035] Adjusting the pulse light power of the irradiation light source based on the transfer interval, and irradiating the light-transmitting side of the transfer substrate with the irradiation light source to cause the light-releasing layer to decompose into gas, and transferring the light-emitting device to a target substrate;

[0036] Preferably, the transfer spacing is 10 μm-50 μm, and the pulse light power of the irradiation light source is 0.2 J / cm 2 -3J / cm 2 .

[0037] Based on any one of the above aspects, the mass transfer device and mass transfer method provided by the embodiments of the present application include a transfer substrate and an irradiation light source, wherein the transfer substrate includes an adhesive side and a light-transmitting side arranged opposite to each other, and the light-emitting direction of the irradiation light source is toward the light-transmitting side. The transfer substrate adheres to the light-emitting device to be transferred through the adhesive side, and transfers the light-emitting device to the target substrate under the action of the irradiation light source, and the irradiation light source is used to irradiate the light-transmitting side of the transfer substrate, and the transfer substrate releases the light-emitting device located on the adhesive side after absorbing the light energy. In the above-mentioned mass transfer device, an irradiation light source composed of at least one xenon lamp is used to provide light energy for the transfer substrate, which can not only flexibly adjust the area of ​​a single irradiation, increase the number of light-emitting devices transferred in a single time, and improve the transfer efficiency, but also eliminates the need to use rare gases such as KrF, Cl2, etc. as laser media, effectively reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0039] Figure 1 A schematic diagram of a structure of a mass transfer device provided in an embodiment of the present application;

[0040] Figure 2 Another structural schematic diagram of a mass transfer device provided in an embodiment of the present application;

[0041] Figure 3 A schematic diagram of a flow chart of a mass transfer method provided in an embodiment of the present application;

[0042] Figure 4 for Figure 3 The corresponding process diagram;

[0043] Figure 5 A schematic diagram of a sub-step flow chart of a mass transfer method provided in an embodiment of the present application;

[0044] Figure 6 for Figure 5 The corresponding process diagram;

[0045] Figure 7 for Figure 3 Schematic diagram of the sub-step flow chart of step S110;

[0046] Figure 8 for Figure 7 The corresponding process diagram;

[0047] Fig. 9 for Figure 3 Schematic diagram of the sub-step flow chart of step S120. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0049] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0050] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0051] In the description of this application, it should be noted that the terms "upper", "lower", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0052] In the description of this application, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed", "connected", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal connection of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0053] It should be noted that, in the absence of conflict, different features in the embodiments of the present application may be combined with each other.

[0054] To solve the problems in the prior art, please refer to Figure 1 The embodiment of the present application provides a mass transfer device 10, which includes a transfer substrate 110 and an irradiation light source 120, wherein the transfer substrate 110 includes a light-transmitting side 110A and a bonding side 110B that are arranged opposite to each other, and the light emitting direction of the irradiation light source 120 is toward the light-transmitting side 110A.

[0055] The transfer substrate 110 can adhere the light-emitting device 200 to be transferred through the bonding side 110B, and transfer the light-emitting device 200 to the target substrate under the action of the irradiation light source 120. Specifically, the irradiation light source 120 irradiates the light-transmitting side 110A of the transfer substrate 110, and the transfer substrate 110 releases the light-emitting device 200 located on the bonding side 110B after absorbing the light energy. The irradiation light source 120 can be composed of at least one xenon lamp, that is, the irradiation light source 120 can be composed of one xenon lamp or a combination of multiple xenon lamps, and a light source of suitable size can be assembled according to specific needs. Exemplarily, the xenon lamp can include but is not limited to a circular xenon lamp and a square xenon lamp, etc., wherein the irradiation area of ​​a single circular xenon lamp is 100*100mm, and the irradiation area of ​​a single square xenon lamp is 150*150mm. Preferably, when transferring the light-emitting device 200, a square xenon lamp can be selected to assemble to form the irradiation light source 120.

[0056] In this embodiment, an irradiation light source composed of at least one xenon lamp is used to provide light energy for the transfer substrate, which not only can flexibly adjust the area of ​​a single irradiation, increase the number of light-emitting devices 200 transferred in a single time, and improve the transfer efficiency, but also eliminates the need to use rare gases such as KrF, Cl2, etc. as laser media, effectively reducing production costs.

[0057] For further information, please refer to Figure 2The transfer substrate 110 includes a transparent substrate 111, a light absorbing layer 112, a light releasing layer 113 and a temporary bonding layer 114. In a direction perpendicular to the plane where the transparent substrate 111 is located, the light absorbing layer 112, the light releasing layer 113 and the temporary bonding layer 114 are stacked in sequence, wherein the side where the temporary bonding layer 114 is located is the bonding side 110B, and the side where the light absorbing layer 112 is located is the light transmitting side 110A.

[0058] The temporary bonding layer 114 can be temporarily bonded to the light emitting device 200, and the light absorbing layer 112 can absorb the light energy emitted by the irradiating light source 120, and convert the light energy into heat energy and transfer it to the light releasing layer 113. The light releasing layer 113 decomposes into gas under the action of heat energy to transfer the light emitting device 200 located on the temporary bonding layer 114 to the target substrate. Among them, the orthographic projection of the temporary bonding layer 114 on the transparent substrate 111 can overlap with the orthographic projection of the light emitting device 200 on the transparent substrate 111, so as to reduce the energy requirement and the difficulty of peeling off the temporary bonding layer 114, and improve the transfer efficiency and yield.

[0059] With such a configuration, the light energy emitted by the irradiation light source 120 can be absorbed by the light absorbing layer 112, and the light energy can be converted into heat energy and transferred to the light releasing layer 113. The light releasing layer 113 decomposes into gas under the action of heat energy, and pushes the light emitting device 200 located on the temporary bonding layer 114 to be transferred to the target substrate, thereby realizing a non-contact transfer process and avoiding polymer residue during the transfer process of the light emitting device 200.

[0060] Furthermore, in order to ensure the light transmission effect of the transparent substrate 111, the transparent substrate 111 can be made of a material with high transparency (for example, T>90%) in a wide band range (for example, 300nm-1200nm). Exemplarily, the material of the transparent substrate 111 can include double-polished glass, double-polished sapphire and double-polished quartz glass.

[0061] The material of the light absorbing layer 112 may be an ester-based polymer doped with a wide-band light absorbing material (e.g., carbon black particles, metal particles, and diimmonium salts), wherein the solid cost accounts for 10% of the total solution volume. For example, the ester-based polymer may include propylene glycol methyl ether acetate (PGMEA), ethylene glycol butyl ether (ETB), and polyethylene terephthalate (PET). In the direction perpendicular to the plane where the transparent substrate 111 is located, the thickness of the light absorbing layer 112 may be 0.8 μm-1.2 μm. For example, the thickness of the light absorbing layer 112 may be 0.8 μm, 0.85 μm, 0.9 μm, 1 μm, 1.1 μm, 1.15 μm, and 1.2 μm, etc. Preferably, the thickness of the light absorbing layer 112 is 1 μm.

[0062] The light release layer 113 is made of a polymer that rapidly decomposes and generates gas at high temperature, so that sufficient gas can be generated during the transfer process to release the light emitting device 200 from the transfer substrate 110 to the target substrate. For example, the light release layer 113 can be made of polymers such as polycarbonate (PCC), polyethersulfone (PES), polyphosphate (PPC), and polyphthalic anhydride (PPA). In the direction perpendicular to the plane where the transparent substrate 111 is located, the thickness of the light release layer 113 can be 0.8μm-1.2μm. For example, the thickness of the light release layer 113 can be 0.8μm, 0.85μm, 0.9μm, 1μm, 1.1μm, 1.15μm, and 1.2μm, etc. Preferably, the thickness of the light release layer 113 is 1μm.

[0063] The bonding temperature and drying temperature of the temporary bonding layer 114 are lower than the decomposition temperature range of the light release layer 113 to ensure that the light release layer 113 will not decompose prematurely during the process of making the temporary bonding layer 114 and bonding the light emitting device 200, thereby affecting the transfer efficiency and transfer yield of the transfer substrate 110. The material of the temporary bonding layer 114 may include highly viscous polycarbonate (PPC) or polymethyl methacrylate (PMMA), etc.

[0064] In the direction perpendicular to the plane of the transparent substrate 111, the thickness of the temporary bonding layer 114 can be 5μm-7μm. Exemplarily, the thickness of the temporary bonding layer 114 can be 5μm, 5.1μm, 5.2μm, 5.5μm, 6μm, 6.5μm, 6.8μm, 6.9μm and 7μm, etc. Preferably, the thickness of the temporary bonding layer 114 is 6μm.

[0065] Based on the same inventive concept, the embodiment of the present application also provides a mass transfer method applied to a mass transfer device 10. The mass transfer device 10 may include a transfer substrate 110 and an irradiation light source 120. The transfer substrate 110 includes an adhesive side 110B and a light-transmitting side 110A arranged opposite to each other. Figure 3 and Figure 4 , the mass transfer method provided by this application is described in detail, Figure 3 A possible flowchart of the steps is shown below. Figure 4 for Figure 3 Corresponding process diagram.

[0066] Step S110: transferring the light-emitting device to be transferred to the bonding side of the transfer substrate.

[0067] In this step, the transfer substrate 110 includes a transparent substrate 111, a light absorbing layer 112, a light releasing layer 113 and a temporary bonding layer 114. In a direction perpendicular to the plane where the transparent substrate 111 is located, the light absorbing layer 112, the light releasing layer 113 and the temporary bonding layer 114 are stacked in sequence, wherein the side where the temporary bonding layer 114 is located is the bonding side 110B, and the side where the light absorbing layer 112 is located is the light transmitting side 110A. Specifically, the light emitting devices 200 may be arrayed on a temporary substrate 140 first, and then transferred to the temporary bonding layer 114 of the transfer substrate 110.

[0068] Step S120: irradiating the light-transmitting side of the transfer substrate with an irradiation light source to transfer the light-emitting device on the transfer substrate to the target substrate.

[0069] In this step, the light-transmitting side 110A of the transfer substrate 110 is irradiated by the irradiation light source 120, the light-absorbing layer 112 absorbs the light energy and converts it into heat energy, and the light-releasing layer 113 releases the light-emitting device 200 located on the bonding side 110B onto the target substrate 130 under the action of the heat energy. The irradiation light source 120 can be composed of at least one xenon lamp, that is, the irradiation light source 120 can be composed of one xenon lamp or a combination of multiple xenon lamps, and a light source of suitable size can be assembled according to specific needs. Exemplarily, the xenon lamp can include but is not limited to a circular xenon lamp and a square xenon lamp, etc., wherein the irradiation area of ​​a single circular xenon lamp is 100*100mm, and the irradiation area of ​​a single square xenon lamp is 150*150mm. Preferably, when transferring the light-emitting device 200, a square xenon lamp can be selected to assemble to form the irradiation light source 120, and the single irradiation area is greatly increased compared to the solution of using an excimer laser as a light source.

[0070] In this embodiment, an irradiation light source composed of at least one xenon lamp is used to provide light energy for the transfer substrate, which not only can flexibly adjust the area of ​​a single irradiation, increase the number of light-emitting devices 200 transferred in a single time, and improve the transfer efficiency, but also eliminates the need to use rare gases such as KrF, Cl2, etc. as laser media, effectively reducing production costs.

[0071] For further information, please refer to Figure 5 and Figure 6 The mass transfer method provided in the present application may further include a step of manufacturing a transfer substrate 110 before step S110, and this step may be implemented by the following method.

[0072] Step S101: providing a transparent substrate.

[0073] In this step, the transparent substrate 111 can be ultrasonically cleaned for 5 minutes using acetone, anhydrous ethanol and deionized water respectively, and blown dry with nitrogen. Finally, it is placed on a heating plate and the cleaned transparent substrate 111 is heated to remove water vapor on the surface of the transparent substrate 111.

[0074] In order to ensure the light transmission effect of the transparent substrate 111, a material with high transparency (for example, T>90%) in a wide band range (for example, 300nm-1200nm) can be selected to make the transparent substrate 111. Exemplarily, the material of the transparent substrate 111 can include double-polished glass, double-polished sapphire and double-polished quartz glass.

[0075] Step S102: forming a light absorbing layer on one side of the transparent substrate.

[0076] In this step, a glue film can be coated on the transparent substrate 111 by a glue spreader to form a light absorbing layer 112 on one side of the transparent substrate 111. The material of the light absorbing layer 112 can be an ester-based polymer doped with a wide-band light absorbing material (for example, carbon black particles, metal particles and diimmonium salt), wherein the solid cost accounts for 10% of the total solution volume. For example, the ester-based polymer can include propylene glycol methyl ether acetate (PGMEA), ethylene glycol butyl ether (ETB) and polyethylene terephthalate (PET). In the direction perpendicular to the plane where the transparent substrate 111 is located, the thickness of the light absorbing layer 112 is 0.8μm-1.2μm. For example, the thickness of the light absorbing layer 112 can be 0.8μm, 0.85μm, 0.9μm, 1μm, 1.1μm, 1.15μm and 1.2μm, etc. Preferably, the thickness of the light absorbing layer 112 is 1μm.

[0077] Step S103: forming a light releasing layer on a side of the light absorbing layer away from the transparent substrate.

[0078] In this step, a polymer that rapidly decomposes and generates gas at high temperature can be used to make the light release layer 113. Specifically, at least a polymer such as polycarbonate (PCC), polyethersulfone (PES), polyphosphate (PPC), polyphthalic anhydride (PPA) can be dissolved in a polar solvent, and then coated on the side of the light absorbing layer 112 away from the transparent substrate 111 to form the light release layer 113. By way of example, the polar solution includes but is not limited to anisole, N-methylpyrrolidone (NMP), γ-butyrolactone (GBL), etc., which not only has good solubility, but also has low volatility, which is conducive to improving the uniformity of film formation. In the direction perpendicular to the plane of the transparent substrate 111, the thickness of the light release layer 113 can be 0.8μm-1.2μm. Exemplarily, the thickness of the light release layer 113 can be 0.8μm, 0.85μm, 0.9μm, 1μm, 1.1μm, 1.15μm and 1.2μm, etc. Preferably, the thickness of the light release layer 113 is 1μm.

[0079] Step S104: forming a temporary bonding layer on a side of the light release layer away from the transparent substrate.

[0080] In this step, a temporary bonding layer 114 can be formed of a material such as high-viscosity polycarbonate or polymethyl methacrylate. In the direction perpendicular to the plane where the transparent substrate 111 is located, the thickness of the temporary bonding layer 114 can be 5μm-7μm. For example, the thickness of the temporary bonding layer 114 can be 5μm, 5.1μm, 5.2μm, 5.5μm, 6μm, 6.5μm, 6.8μm, 6.9μm and 7μm, etc. Preferably, the thickness of the temporary bonding layer 114 is 6μm. In addition, the bonding temperature and drying temperature of the temporary bonding layer 114 are less than the decomposition temperature range of the light release layer 113 to ensure that the light release layer 113 will not be decomposed prematurely during the process of making the temporary bonding layer 114 and bonding the light-emitting device 200, which will affect the transfer efficiency and transfer yield of the transfer substrate 110.

[0081] In this embodiment, a light absorbing layer 112, a light releasing layer 113 and a temporary bonding layer 114 are sequentially stacked on a transparent substrate 111. The light absorbing layer 112 can absorb light energy emitted by the irradiation light source 120 and convert the light energy into heat energy to transfer to the light releasing layer 113. The light releasing layer 113 decomposes into gas under the action of heat energy, and pushes the light emitting device 200 located on the temporary bonding layer 114 to be transferred to the target substrate 130, thereby realizing a non-contact transfer process and avoiding polymer residue during the transfer of the light emitting device 200.

[0082] For further information, please refer to Figure 7 and Figure 8 , step S110 can be implemented by the following method.

[0083] Step S111: moving the transfer substrate to bond the light-emitting device to the temporary bonding layer.

[0084] In this step, the light emitting devices 200 may be arrayed on a temporary substrate 140, wherein the temporary substrate 140 and the light emitting devices 200 may be connected via an adhesive layer. Next, the transfer substrate 110 is moved, the adhesive side 110B of the transfer substrate 110 is directed toward the light emitting devices 200 to be transferred, and the light emitting devices 200 are bonded to the temporary bonding layer 114.

[0085] Step S112: using an excimer laser to irradiate the side of the light-emitting device away from the temporary bonding layer, separating the light-emitting device from the temporary substrate, and transferring the light-emitting device to the temporary bonding layer.

[0086] In this step, the side of the light-emitting device 200 that contacts the temporary substrate 140 is irradiated with an excimer laser. The heat generated by the laser can reduce the adhesion of the adhesive layer between the temporary substrate 140 and the light-emitting device 200, so that the light-emitting device 200 can be peeled off from the temporary substrate 140 and transferred to the temporary bonding layer 114.

[0087] After step S112, the transfer substrate 110 may be etched to remove the temporary bonding layer 114 around the light emitting device 200, so that the orthographic projection of the light emitting device 200 on the transparent substrate 111 coincides with the orthographic projection of the temporary bonding layer 114 on the transparent substrate 111. Specifically, the transfer substrate 110 bonded with the light emitting device 200 may be placed in a plasma etching device, and the vacuum environment of the plasma etching device may be adjusted (for example, the vacuum degree is 5*10 -4 Pa), after the etching gas and the atmosphere gas are introduced, the transfer substrate 110 is etched until the temporary bonding layer 114 around the light emitting device 200 is removed. Among them, the flow rate of the etching gas and the atmosphere gas, the etching speed and the working power of the plasma etching equipment can be adjusted according to the material of the light emitting device 200 and the film thickness of the temporary bonding layer 114. Exemplarily, when the light emitting device 200 is a MicroLED made of GaN material, 10sccm of oxygen and 15sccm of argon can be introduced as the etching gas and the atmosphere gas respectively, the etching speed of the plasma etching equipment can be 4.2nm / s, and the working power of the plasma etching equipment can be 250W.

[0088] In this embodiment, the transfer substrate 110 is etched to remove the temporary bonding layer 114 around the light-emitting device 200, so that the orthographic projection of the light-emitting device 200 on the transparent substrate 111 coincides with the orthographic projection of the temporary bonding layer 114 on the transparent substrate 111, thereby reducing the energy requirement and difficulty of peeling off the temporary bonding layer 114 and improving the transfer efficiency and yield.

[0089] For further information, please refer to Fig. 9 , step S120 can be implemented by the following method.

[0090] Step S121: moving the transfer substrate and making the bonding side of the transfer substrate face the target substrate.

[0091] Step S122: adjusting the transfer distance between the transfer substrate and the target substrate, aligning and leveling the transfer substrate, and fixing the transfer substrate.

[0092] Step S123: adjusting the pulse light power of the irradiation light source based on the transfer spacing, and using the irradiation light source to irradiate the light-transmitting side of the transfer substrate, causing the light-releasing layer to decompose into gas, and transferring the light-emitting device to the target substrate.

[0093] In the above steps, after the transfer substrate 110 is aligned and leveled, the transfer substrate 110 can be fixed by a clamp. Next, the light source 120 is used to irradiate the light-transmitting side 110A of the transfer substrate 110, and the light absorption layer 112 can convert light energy into heat energy, causing the light release layer 113 to decompose into gas, thereby pushing the light-emitting device 200 to fly to the target substrate 130. Then, solvents such as acetone, anhydrous ethanol and deionized water can be used to remove the temporary bonding layer 114 remaining on the target substrate 130. Among them, the transfer accuracy of the light-emitting device 200 to the target substrate 130 can be adjusted by adjusting the film thickness of the light release layer 113, the transfer spacing and the pulse light power of the irradiation light source 120. Exemplarily, the transfer spacing is 10μm-50μm, and the pulse light power of the irradiation light source 120 is 0.2J / cm 2 -3J / cm 2 .

[0094] In summary, the present application provides a mass transfer device and a mass transfer method, wherein the mass transfer device includes a transfer substrate and an irradiation light source, wherein the transfer substrate includes an adhesive side and a light-transmitting side arranged opposite to each other, and the light-emitting direction of the irradiation light source is toward the light-transmitting side. The transfer substrate adheres to the light-emitting device to be transferred through the adhesive side, and transfers the light-emitting device to the target substrate under the action of the irradiation light source, and the irradiation light source is used to irradiate the light-transmitting side of the transfer substrate, and the transfer substrate releases the light-emitting device located on the adhesive side after absorbing the light energy. In the above-mentioned mass transfer device, an irradiation light source composed of at least one xenon lamp is used to provide light energy for the transfer substrate, which can not only flexibly adjust the area of ​​a single irradiation, increase the number of light-emitting devices transferred in a single time, and improve the transfer efficiency, but also eliminates the need to use rare gases such as KrF, Cl2, etc. as laser media, effectively reducing production costs.

[0095] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A mass transfer device, characterized in that: The mass transfer device comprises a transfer substrate and an irradiation light source, wherein the transfer substrate comprises a bonding side and a light-transmitting side which are arranged opposite to each other, and the light-emitting direction of the irradiation light source is toward the light-transmitting side; The transfer substrate is used to adhere the light-emitting device to be transferred through the bonding side, and transfer the light-emitting device to the target substrate under the action of the irradiation light source; The irradiation light source is used to irradiate the light-transmitting side of the transfer substrate to release the light-emitting device located on the bonding side of the transfer substrate, wherein the irradiation light source includes at least one xenon lamp.

2. The mass transfer device according to claim 1, characterized in that: The transfer substrate comprises a transparent substrate, and a light absorbing layer, a light releasing layer and a temporary bonding layer stacked in sequence in a direction perpendicular to the plane where the transparent substrate is located, wherein the side where the temporary bonding layer is located is the bonding side, and the side where the light absorbing layer is located is the light transmitting side; The temporary bonding layer is used to bond the light emitting device, wherein the orthographic projection of the temporary bonding layer on the transparent substrate coincides with the orthographic projection of the light emitting device on the transparent substrate; The light absorbing layer is used to absorb light energy and convert the light energy into heat energy and transfer it to the light releasing layer; The light-releasing layer is used to decompose into gas under the action of the thermal energy, so as to transfer the light-emitting device on the temporary bonding layer to the target substrate.

3. The mass transfer device according to claim 2, characterized in that: The material of the transparent substrate includes double-polished glass, double-polished sapphire and double-polished quartz glass.

4. The mass transfer device according to claim 2, characterized in that: The material of the light absorbing layer includes a wide-band light absorbing material, and the thickness of the light absorbing layer is 0.8um-1.2um in a direction perpendicular to the plane where the transparent substrate is located; The material of the light release layer includes polycarbonate, polyethersulfone, polyphosphate and polyphthalic anhydride, and the thickness of the light release layer is 0.8um-1.2um in the direction perpendicular to the plane where the transparent substrate is located; The temporary bonding layer is made of a material including highly viscous polycarbonate or polymethyl methacrylate. In a direction perpendicular to the plane where the transparent substrate is located, the temporary bonding layer has a thickness of 5 μm-7 μm.

5. A mass transfer method, characterized in that: Applied to a mass transfer device, the mass transfer device comprises a transfer substrate and an irradiation light source, the transfer substrate comprises a bonding side and a light-transmitting side arranged opposite to each other, the method comprises: transferring the light-emitting device to be transferred to the bonding side of the transfer substrate; The light source is used to illuminate the light-transmitting side of the transfer substrate to transfer the light-emitting device on the transfer substrate to a target substrate, wherein the light source includes at least one xenon lamp.

6. The method for mass transfer according to claim 5, characterized in that: Before the step of transferring the light-emitting device to be transferred to the bonding side of the transfer substrate, the method further comprises the step of making the transfer substrate, the step comprising: Providing a transparent substrate; A light absorbing layer is formed on one side of the transparent substrate, wherein the thickness of the light absorbing layer is 0.8 μm-1.2 μm in a direction perpendicular to the plane where the transparent substrate is located; A light releasing layer is formed on a side of the light absorbing layer away from the transparent substrate, wherein the thickness of the light releasing layer is 0.8 μm-1.2 μm in a direction perpendicular to the plane where the transparent substrate is located; A temporary bonding layer is formed on a side of the light-releasing layer away from the transparent substrate, wherein the thickness of the temporary bonding layer is 5 μm-7 μm in a direction perpendicular to the plane where the transparent substrate is located.

7. The method for mass transfer according to claim 6, characterized in that: Before the step of forming a light absorbing layer on one side of the transparent substrate, the method further comprises the step of pre-treating the transparent substrate, the step comprising: Ultrasonic cleaning of the transparent substrate is performed using acetone, anhydrous ethanol and deionized water respectively; The cleaned transparent substrate is heated to remove water vapor on the surface of the transparent substrate.

8. The method for mass transfer according to claim 6, characterized in that: The step of transferring the light-emitting device to be transferred to the bonding side of the transfer substrate comprises: Moving the transfer substrate to bond the light emitting device to the temporary bonding layer, wherein the light emitting device is located on a temporary substrate; An excimer laser is used to irradiate a side of the light emitting device away from the temporary bonding layer, so as to separate the light emitting device from the temporary substrate, and then transfer the light emitting device to the temporary bonding layer.

9. The method for mass transfer according to claim 6, characterized in that: After the step of transferring the light-emitting device to be transferred to the bonding side of the prefabricated transfer substrate, the method further comprises: The transfer substrate is etched to remove the temporary bonding layer around the light emitting device, so that the orthographic projection of the light emitting device on the transparent substrate coincides with the orthographic projection of the temporary bonding layer on the transparent substrate.

10. The method for mass transfer according to claim 6, characterized in that: The step of irradiating the light-transmitting side of the transfer substrate with the irradiation light source to transfer the light-emitting device on the transfer substrate to the target substrate comprises: Moving the transfer substrate and orienting the bonding side of the transfer substrate toward the target substrate; Adjusting the transfer distance between the transfer substrate and the target substrate, aligning and leveling the transfer substrate, and fixing the transfer substrate; Adjusting the pulse light power of the irradiation light source based on the transfer interval, and irradiating the light-transmitting side of the transfer substrate with the irradiation light source to cause the light-releasing layer to decompose into gas, and transferring the light-emitting device to a target substrate; Preferably, the transfer spacing is 10 μm-50 μm, and the pulse light power of the irradiation light source is 0.2 J / cm 2 -3J / cm 2 .

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