Frequency adjustment control method and device for ultrahigh frequency wafer

Abstract

The invention discloses a frequency adjustment control method and device for an ultrahigh frequency wafer, and relates to the technical field of semiconductor production. Determining a target area of the coated wafer, dividing the target area to obtain a plurality of to-be-detected areas, and obtaining the area vibration frequency of the to-be-detected areas; if the area vibration frequency is larger than a preset frequency threshold value, the area to be detected is judged to be an abnormal area, a feature code is added, and the area vibration frequency and the feature code are uploaded to a feature database; working parameters of the laser etching equipment are determined according to the feature database, and the abnormal area is etched according to the working parameters; the vibration frequency of each to-be-detected area is detected, the area with the abnormal vibration frequency is identified, a feature code is added to the area, the area vibration frequency and the feature code are uploaded to a feature database, rapid identification and intelligent marking of the abnormal area are achieved, and data support is provided for subsequent laser etching equipment working parameter optimization. And the accuracy and the high efficiency of the etching operation are ensured.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor production, and in particular relates to a frequency adjustment control method and device for an ultra-high frequency chip. Background Art

[0002] UHF chips are a type of quartz crystal oscillator with the characteristics of high precision, low power consumption, and low latency. As the computing power and transmission rate of electronic devices increase, the demand for UHF chips increases, and they are widely used in 5G communications, the Internet of Things, medical electronics, and automobiles. It is the "heart" of digital circuits, providing precise clock source signals to ensure stable operation of digital processors, analog-to-digital converters and other chips. In recent years, UHF chips have been continuously upgraded and have become a key component to promote the miniaturization and intelligence of electronic products.

[0003] Due to the development trend of miniaturization and high stability requirements of piezoelectric vibrating pieces, the accuracy and stability of traditional ground quartz chips are difficult to meet the current terminal market demand. The demand for ultra-high frequency chips has increased, but there are many difficulties in the preparation of ultra-high frequency chips. For example, due to the different coating quality during the chip production process, the product yield is low and the output is difficult to increase. Summary of the invention

[0004] The purpose of the present invention is to solve the problem that the product yield is low and the output is difficult to increase due to the different coating quality during the chip production process, and to propose a frequency adjustment control method and device for ultra-high frequency chips.

[0005] In a first aspect of the present invention, a frequency adjustment control method for an ultra-high frequency chip is first proposed, the method comprising:

[0006] Determine a target area of ​​the coated wafer, divide the target area into a plurality of areas to be detected, and obtain a regional vibration frequency of the areas to be detected;

[0007] If the regional vibration frequency is greater than the preset frequency threshold, the area to be detected is determined as an abnormal area and a feature code is added, and the regional vibration frequency and feature code are uploaded to the feature database;

[0008] The operating parameters of the laser etching equipment are determined according to the feature database, and the abnormal area is etched according to the operating parameters.

[0009] Optionally, obtaining the regional vibration frequency of the area to be detected includes:

[0010] Acquire an original wafer and identify preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates;

[0011] Obtaining a detection instruction and sending the detection instruction to a control system, so that the control system controls the upper and lower electrodes to discharge and obtain a vibration signal of the original wafer;

[0012] The vibration signal is preprocessed to obtain the regional vibration frequency.

[0013] Optionally, determining the operating parameters of the laser etching device according to the feature database includes:

[0014] Initializing a laser etching device, and updating a target value of the laser etching device according to a target frequency;

[0015] The characteristic code of the coated wafer in the characteristic database is obtained, the working parameters of each abnormal area are determined according to the characteristic code, and whether to execute the laser etching command is determined by the target offset frequency.

[0016] Optionally, the working parameters of each abnormal area are determined according to the characteristic code, including:

[0017] Obtaining a first vibration frequency of the original wafer and a second vibration frequency of the coated wafer, and calculating the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence;

[0018] Determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, coating density and correction area;

[0019] The original area of ​​the coated wafer is obtained, the target frequency is calculated according to the second vibration frequency, the original area and the correction mass, and the working parameters of the laser etching equipment are determined according to the correction mass and the target frequency.

[0020] Optionally, determining whether to execute the laser etching command is performed by the target offset frequency, including:

[0021] The target offset frequency is calculated according to the second vibration frequency and the target frequency, and whether the wafer is defective is determined according to the offset frequency;

[0022] If the target frequency offset is greater than the frequency offset threshold, or the correction area is greater than the original area, the wafer is judged as a defective product and the abnormal area is removed; otherwise, the laser etching command is executed.

[0023] In a second aspect of the present invention, a frequency adjustment control device for an ultra-high frequency chip is provided, comprising: a region detection module, a feature upload module and a region etching module:

[0024] The area detection module is used to determine the target area of ​​the coated wafer, divide the target area into multiple areas to be detected, and obtain the regional vibration frequency of the area to be detected;

[0025] The feature uploading module is used to determine the area to be detected as an abnormal area and add a feature code if the area vibration frequency is greater than a preset frequency threshold, and upload the area vibration frequency and feature code to the feature database;

[0026] The regional etching module is used to determine the working parameters of the laser etching equipment according to the feature database, and to etch the abnormal area according to the working parameters.

[0027] Optionally, the area detection module further includes: a wafer positioning module, a discharge control module and a frequency acquisition module:

[0028] The wafer positioning module is used to obtain the original wafer and identify the preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates;

[0029] The control discharge module is used to obtain a detection instruction and send the detection instruction to a control system, so that the control system controls the upper and lower electrodes to discharge to obtain a vibration signal of the original wafer;

[0030] The frequency acquisition module is used to obtain the regional vibration frequency after preprocessing the vibration signal.

[0031] Optionally, the regional etching module further includes: a device initialization module and a working parameter update module:

[0032] The device initialization module is used to initialize the laser etching device and update the target value of the laser etching device according to the target frequency;

[0033] The working parameter updating module is used to obtain the feature code of the coated wafer in the feature database, determine the working parameters of each abnormal area according to the feature code, and determine whether to execute the laser etching command according to the target offset frequency.

[0034] Optionally, the working parameter updating module further includes: a coating thickness obtaining module, a correction quality obtaining module and a working parameter determining module:

[0035] The coating thickness acquisition module is used to acquire the first vibration frequency of the original wafer and the second vibration frequency of the coated wafer, and calculate the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence;

[0036] The correction quality acquisition module is used to determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, the coating density and the correction area;

[0037] The working parameter determination module is used to obtain the original area of ​​the coated wafer, calculate the target frequency according to the second vibration frequency, the original area and the correction mass, and determine the working parameters of the laser etching equipment according to the correction mass and the target frequency.

[0038] Optionally, the working parameter updating module further includes: a good product judging module and an etching execution module:

[0039] The good product judgment module is used to calculate the target offset frequency according to the second vibration frequency and the target frequency, and judge whether the wafer is a defective product according to the offset frequency;

[0040] The etching execution module is used to judge the wafer as defective and remove the abnormal area if the target offset frequency is greater than the offset frequency threshold, or the correction area is greater than the original area; otherwise, execute the laser etching command.

[0041] Beneficial effects of the present invention:

[0042] The present invention proposes a frequency adjustment control method for an ultra-high frequency chip, which determines the target area of ​​a coated wafer, divides the target area into multiple areas to be detected, and obtains the regional vibration frequency of the area to be detected; if the regional vibration frequency is greater than the preset frequency threshold, the area to be detected is determined as an abnormal area and a feature code is added, and the regional vibration frequency and feature code are uploaded to the feature database; the working parameters of the laser etching equipment are determined according to the feature database, and the abnormal area is etched according to the working parameters; the vibration frequency of each area to be detected is detected, and the area with abnormal vibration frequency is identified, and a feature code is added thereto, and the regional vibration frequency and feature code are uploaded to the feature database, so as to realize rapid identification and intelligent marking of abnormal areas, provide data support for subsequent optimization of the working parameters of the laser etching equipment, and ensure the accuracy and efficiency of the etching operation. The difference from other frequency adjustment devices is that all products on the entire wafer can be adjusted, while other frequency adjustments can only be made for a single product. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The present invention will be further described below in conjunction with the accompanying drawings.

[0044] Figure 1 A flow chart of a method for frequency adjustment control of an ultra-high frequency chip is provided for an embodiment of the present invention;

[0045] Figure 2 A wafer top view of a frequency adjustment control method for an ultra-high frequency chip provided by an embodiment of the present invention;

[0046] Figure 3 A front view of a wafer of a frequency adjustment control method for an ultra-high frequency chip provided by an embodiment of the present invention;

[0047] Figure 4 A structural schematic diagram of a frequency adjustment control device for an ultra-high frequency chip is provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0048] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The term "and / or" herein is only a description of the association relationship of the associated objects, indicating that there can be three relationships. For example, A and B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the present invention, the description of "first", "second", etc. is only used for descriptive purposes, and cannot be understood as indicating or implying its relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in the field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0049] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of the present invention.

[0050] The embodiment of the present invention provides a method for adjusting and controlling the frequency of an ultra-high frequency chip. Figure 1 , Figure 1 A flowchart of a frequency adjustment control method for an ultra-high frequency chip provided by an embodiment of the present invention. The method comprises the following steps:

[0051] S101, determining a target area of ​​the coated wafer, dividing the target area into a plurality of areas to be detected, and obtaining a regional vibration frequency of the areas to be detected;

[0052] S102, if the regional vibration frequency is greater than a preset frequency threshold, the area to be detected is determined as an abnormal area and a feature code is added, and the regional vibration frequency and feature code are uploaded to a feature database;

[0053] S103, determining the working parameters of the laser etching equipment according to the feature database, and etching the abnormal area according to the working parameters.

[0054] A frequency adjustment control method for an ultra-high frequency chip provided in an embodiment of the present invention divides the target area of ​​the coated wafer and detects the vibration frequency of each area to be detected, so as to accurately identify the area with abnormal vibration frequency, add a feature code to it, upload the regional vibration frequency and feature code to the feature database, realize rapid identification and intelligent marking of abnormal areas, provide data support for subsequent data-based optimization of laser etching equipment working parameters, and ensure the accuracy and efficiency of etching operations.

[0055] In one implementation, a coated wafer refers to a wafer on which a target material of a target material is evenly sputtered and attached to the surface of the wafer by ion bombardment. This thin film can change the physical, chemical or electrical properties of the wafer; an etching operation refers to the process of removing material from the surface of the wafer by physical or chemical methods. In semiconductor manufacturing, etching operations are used to form circuit patterns or microstructures.

[0056] In one implementation, the coated wafer contains multiple chips (that is, the area to be inspected, and qualified ones are products). By dividing the target area of ​​the coated wafer and obtaining the vibration frequency of each area to be inspected (chip), accurate detection of the quality of the thin film on the wafer surface can be achieved. When the regional vibration frequency is greater than the preset frequency threshold, the area can be accurately judged as an abnormal area, thereby improving the accuracy and reliability of the detection. When an abnormal area is detected, the system will immediately add a feature code to it, and upload the regional vibration frequency and feature code to the feature database. This rapid identification and marking method facilitates subsequent targeted processing and analysis of abnormal areas, improving production efficiency and quality control.

[0057] In one implementation, the operating parameters of the laser etching equipment, such as laser power, etching time, and etching depth, can be determined based on the information in the feature database. The data-based parameter optimization method can ensure the efficiency and accuracy of the laser etching process, reduce damage to normal areas, and ensure efficient processing of abnormal areas, such as removing defects and contamination on the wafer surface and excessively thick coating layers.

[0058] In one embodiment, step S101 includes:

[0059] Acquire the original wafer and identify the preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates;

[0060] Obtaining a detection instruction and sending the detection instruction to a control system so that the control system controls the upper and lower electrodes to discharge and obtain a vibration signal of the original wafer;

[0061] The regional vibration frequency is obtained after preprocessing the vibration signal.

[0062] In one implementation, the control system controls the upper and lower electrodes (the probe and the base constitute the upper and lower electrodes) to discharge, forming an electric field in the middle, and using the piezoelectric effect to vibrate the wafer, thereby obtaining the vibration frequency of the wafer, thereby generating vibration on the original wafer. These vibration signals are then captured and preprocessed, and finally converted into the vibration frequency of each area. The non-contact measurement method ensures the accuracy of the measurement and avoids the damage that may be caused to the wafer by traditional measurement methods.

[0063] In one implementation, the original wafer is fixed by preset coordinates, and the detection instructions are automatically sent to the control system to realize the automation of wafer measurement. This automated production method greatly improves production efficiency, reduces manual intervention and errors, and makes the production and processing of wafers more efficient and stable; the obtained wafer vibration frequency data can be used to evaluate the performance and quality of the wafer. By analyzing and processing these data, problems in the production process can be discovered and corrected in a timely manner, thereby ensuring the quality and reliability of the final product.

[0064] In one embodiment, step S103 includes:

[0065] Initialize the laser etching device and update the target value of the laser etching device according to the target frequency;

[0066] The feature code of the coated wafer in the feature database is obtained, the working parameters of each abnormal area are determined according to the feature code, and whether to execute the laser etching command is determined by the target offset frequency.

[0067] In one implementation, the adjustment process is to use a laser etching device to import and read the frequency value F3 of all individual chips on the entire wafer, then input the target value F4, calculate the weight G2 to be etched according to the corresponding algorithm, and the laser etching device determines the etching time t per unit area according to the weight G2 to be etched. Where W is the etching power of the laser etching equipment, and W has been set to be equivalent to the weight that can be etched per second per unit area.

[0068] In one implementation, by initializing the laser etching equipment and updating its target value according to the target frequency, it can be ensured that the laser etching process is highly consistent with the preset requirements, thereby improving the accuracy and consistency of etching; by obtaining the feature code of the coated wafer in the feature database and determining the working parameters of each abnormal area according to the feature code, accurate identification and processing of the abnormal area can be achieved; by determining whether to execute the laser etching command through the determination of the target offset frequency, unnecessary etching operations can be effectively avoided, thereby reducing the risk of equipment damage and wafer scrapping due to misoperation.

[0069] In one implementation, by importing and reading the frequency value F3 of all individual chips on the entire wafer and comparing it with the target value F4, the weight G2 required to be etched for each chip can be calculated. The data-based calculation method ensures the accuracy of etching and avoids errors caused by manual judgment. Improve etching efficiency: The laser etching equipment determines the etching time t per unit area based on the weight G2 to be etched. This dynamic adjustment method can ensure the efficiency of the etching process. At the same time, by setting the etching power W of the laser etching equipment, the etching speed can be further controlled, making the entire etching process more stable and controllable. Optimize resource utilization: By accurately calculating the required etching weight and time, it can ensure that the energy of the laser etching equipment is fully utilized, avoiding unnecessary waste. The resource optimization strategy not only reduces production costs, but also improves the overall utilization of equipment.

[0070] In one embodiment, determining the working parameters of each abnormal area according to the feature code includes:

[0071] Obtaining a first vibration frequency of the original wafer and a second vibration frequency of the coated wafer, and calculating the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence;

[0072] Determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, coating density and correction area;

[0073] The original area of ​​the coated wafer is obtained, the target frequency is calculated according to the second vibration frequency, the original area and the correction mass, and the working parameters of the laser etching equipment are determined according to the correction mass and the target frequency.

[0074] In one implementation, see Figure 2 , Figure 2 A wafer top view of a frequency adjustment control method for an ultra-high frequency chip provided by an embodiment of the present invention, wherein 201 is an original chip, 202 is a coating layer on the original chip, and 203 is a defective area of ​​the coating layer; the first vibration frequency of the original chip: the vibration frequency of the uncoated chip and the vibration frequency of the coated chip are measured by the piezoelectric effect, which are the first vibration frequency and the second vibration frequency respectively; the coating thickness is calculated according to the first vibration frequency and the second vibration frequency, and a coating thickness calculation formula is fitted, and the film thickness formula Where T2 is the film thickness of the coating, K2 is a constant with a value of 6.82×10 13, K3 is a constant with a value of 1.68, ρ1 is the coating density (obtained from the actual element density of the coating metal), which varies according to the coating, K4 is a constant with a value of 8.6, F2 is the frequency of the chip before coating (the first vibration frequency), and F3 is the frequency of the chip after coating (the second vibration frequency); the coating area S1 = A × B, where S is the coating area, A is the length of the coating part of the chip, and B is the width of the coating part of the chip. The length and width of the coating area are identified by the CCD device and fitted to calculate the area; the weight of the coating can be deduced from the film thickness formula and the conclusion of the coating area G1 = S × T2 × ρ1; the calculation formula for the target frequency F4 deduced from the above formula is Among them, F3 is the frequency before adjustment (chip frequency after coating), G2 is the weight to be adjusted G2 = S2 × T2 × ρ1, S2 is the area size of the part to be adjusted, S1, K2, K3, and K4 are all the same values ​​as mentioned above.

[0075] In one implementation, see Figure 3 , Figure 3 A front view of a wafer of a frequency adjustment control method for an ultra-high frequency chip provided in an embodiment of the present invention, wherein 301 is the thickness of the coating layer, and 302 is the thickness of the original chip; by obtaining the vibration frequency of the original chip and the coated chip, the coating thickness can be accurately calculated. This method avoids the error of the traditional measurement method and improves the measurement accuracy of the coating thickness; since the chip corresponds to the abnormal area one by one, the problematic chip can also be quickly located and processed; the working parameters of the laser etching equipment are determined according to the correction quality and the target frequency, so that the equipment can operate in the best state, thereby improving work efficiency. The precise parameter setting also helps to reduce the wear and failure rate of the equipment, extend the service life of the equipment, and improve the overall processing quality and efficiency.

[0076] In one embodiment, determining whether to execute a laser etching command according to a target offset frequency includes:

[0077] The target offset frequency is calculated according to the second vibration frequency and the target frequency, and whether the wafer is defective is determined according to the offset frequency;

[0078] If the target frequency offset is greater than the frequency offset threshold, or the correction area is greater than the original area, the wafer is judged as a defective product and the abnormal area is removed; otherwise, the laser etching command is executed.

[0079] In one implementation, the target frequency deviation is calculated based on the second vibration frequency and the target frequency. P is the target frequency deviation (unit: ppm), SJ is the second vibration frequency, MB is the target frequency, and the frequency deviation threshold value is, for example, 0ppm. If the target frequency deviation P is greater than this threshold, it is judged as a defective product; by calculating the target frequency deviation and comparing it with the frequency deviation threshold, it is possible to accurately determine whether the chip is a defective product. This method avoids the misjudgment and missed judgment that may occur in traditional detection methods, improves the accuracy and reliability of defective product detection, and combines the comparison of the corrected area with the original area to further enhance the accuracy of defective product judgment. When the target frequency deviation is greater than the frequency deviation threshold or the corrected area is greater than the original area, the chip is automatically judged as a defective product and is eliminated, so that defective products can be discovered and processed in a timely manner, avoiding defective products from flowing into subsequent processing flows, thereby improving the overall processing quality and efficiency.

[0080] In one implementation, before executing the laser etching command, the wafer is inspected for defective products, which can ensure that only qualified wafers enter the laser etching process, effectively reducing the risk of problems during the laser etching process and protecting the safety of the laser etching equipment and the wafer products themselves. The entire defective product detection and removal process is completely completed automatically by the system without human intervention, which effectively improves the automation level of the processing process, reduces errors and delays caused by human factors, and makes the processing process more efficient and stable; through strict defective product detection and removal processes, the overall quality of the final product can be ensured, and the number of wafers that meet the requirements on each wafer will also increase, achieving the goal of improving the yield and increasing the wafer output on a single wafer.

[0081] Based on the same inventive concept, the present invention also provides a frequency adjustment control device for an ultra-high frequency chip. Figure 4 , Figure 4 A schematic diagram of the structure of a frequency adjustment control device for an ultra-high frequency chip provided by an embodiment of the present invention includes: a region detection module, a feature upload module and a region etching module:

[0082] A regional detection module is used to determine a target region of the coated wafer, divide the target region into multiple regions to be detected, and obtain a regional vibration frequency of the region to be detected;

[0083] A feature uploading module is used to determine the area to be detected as an abnormal area and add a feature code if the area vibration frequency is greater than a preset frequency threshold, and upload the area vibration frequency and feature code to the feature database;

[0084] The regional etching module is used to determine the working parameters of the laser etching equipment according to the feature database, and to etch the abnormal area according to the working parameters.

[0085] A frequency adjustment control device for an ultra-high frequency chip provided in an embodiment of the present invention can accurately identify areas with abnormal vibration frequencies by dividing the target area of ​​the coated wafer and detecting the vibration frequency of each area to be detected, add feature codes to them, and upload the regional vibration frequencies and feature codes to a feature database, thereby realizing rapid identification and intelligent marking of abnormal areas, providing data support for subsequent data-based optimization of working parameters of laser etching equipment, and ensuring the accuracy and efficiency of etching operations.

[0086] In one embodiment, the area detection module further includes: a wafer positioning module, a discharge control module and a frequency acquisition module:

[0087] A wafer positioning module is used to obtain the original wafer and identify the preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates;

[0088] A control discharge module is used to obtain a detection instruction and send the detection instruction to the control system, so that the control system controls the upper and lower electrodes to discharge and obtain a vibration signal of the original wafer;

[0089] The frequency acquisition module is used to obtain the regional vibration frequency after preprocessing the vibration signal.

[0090] In one embodiment, the regional etching module further includes: a device initialization module and a working parameter update module:

[0091] The device initialization module is used to initialize the laser etching device and update the target value of the laser etching device according to the target frequency;

[0092] The working parameter update module is used to obtain the feature code of the coated wafer in the feature database, determine the working parameters of each abnormal area according to the feature code, and determine whether to execute the laser etching command through the target offset frequency.

[0093] In one embodiment, the working parameter updating module further includes: a coating thickness obtaining module, a correction quality obtaining module and a working parameter determining module:

[0094] The coating thickness acquisition module is used to acquire the first vibration frequency of the original wafer and the second vibration frequency of the coated wafer, and calculate the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence;

[0095] A correction quality acquisition module is used to determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, the coating density and the correction area;

[0096] The working parameter determination module is used to obtain the original area of ​​the coated wafer, calculate the target frequency according to the second vibration frequency, the original area and the correction mass, and determine the working parameters of the laser etching equipment according to the correction mass and the target frequency.

[0097] In one embodiment, the working parameter updating module further includes: a good product judging module and an etching execution module:

[0098] A good product judgment module, used to calculate a target offset frequency according to the second vibration frequency and the target frequency, and judge whether the wafer is a defective product according to the offset frequency;

[0099] The etching execution module is used to judge the wafer as defective and remove the abnormal area if the target offset frequency is greater than the offset frequency threshold, or the correction area is greater than the original area; otherwise, the laser etching command is executed.

[0100] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A frequency adjustment control method for an ultra-high frequency chip, characterized in that: The method comprises: Determine a target area of ​​the coated wafer, divide the target area into a plurality of areas to be detected, and obtain a regional vibration frequency of the areas to be detected; If the regional vibration frequency is greater than the preset frequency threshold, the area to be detected is determined as an abnormal area and a feature code is added, and the regional vibration frequency and feature code are uploaded to the feature database; The operating parameters of the laser etching equipment are determined according to the feature database, and the abnormal area is etched according to the operating parameters.

2. The frequency adjustment control method of an ultra-high frequency chip according to claim 1, characterized in that: Obtain the regional vibration frequency of the area to be detected, including: Acquire an original wafer and identify preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates; Obtaining a detection instruction and sending the detection instruction to a control system, so that the control system controls the upper and lower electrodes to discharge and obtain a vibration signal of the original wafer; The vibration signal is preprocessed to obtain the regional vibration frequency.

3. The frequency adjustment control method of an ultra-high frequency chip according to claim 1, characterized in that: Determining the operating parameters of the laser etching equipment according to the feature database includes: Initializing a laser etching device, and updating a target value of the laser etching device according to a target frequency; The characteristic code of the coated wafer in the characteristic database is obtained, the working parameters of each abnormal area are determined according to the characteristic code, and whether to execute the laser etching command is determined by the target offset frequency.

4. The frequency adjustment control method of an ultra-high frequency chip according to claim 3, characterized in that: Determine the working parameters of each abnormal area based on the characteristic code, including: Obtaining a first vibration frequency of the original wafer and a second vibration frequency of the coated wafer, and calculating the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence; Determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, coating density and correction area; The original area of ​​the coated wafer is obtained, the target frequency is calculated according to the second vibration frequency, the original area and the correction mass, and the working parameters of the laser etching equipment are determined according to the correction mass and the target frequency.

5. The frequency adjustment control method of an ultra-high frequency chip according to claim 4, characterized in that: Determine whether to execute the laser etching command through the target offset frequency, including: The target offset frequency is calculated according to the second vibration frequency and the target frequency, and whether the wafer is defective is determined according to the offset frequency; If the target frequency offset is greater than the frequency offset threshold, or the correction area is greater than the original area, the wafer is judged as a defective product and the abnormal area is removed; otherwise, the laser etching command is executed.

6. A frequency adjustment control device for an ultra-high frequency chip, characterized in that: The device comprises: a region detection module, a feature uploading module and a region etching module: The area detection module is used to determine the target area of ​​the coated wafer, divide the target area into multiple areas to be detected, and obtain the regional vibration frequency of the area to be detected; The feature uploading module is used to determine the area to be detected as an abnormal area and add a feature code if the area vibration frequency is greater than a preset frequency threshold, and upload the area vibration frequency and feature code to the feature database; The regional etching module is used to determine the working parameters of the laser etching equipment according to the feature database, and to etch the abnormal area according to the working parameters.

7. The frequency adjustment control device of an ultra-high frequency chip according to claim 6, characterized in that: The area detection module also includes: a wafer positioning module, a discharge control module and a frequency acquisition module: The wafer positioning module is used to obtain the original wafer and identify the preset coordinates on the original wafer, and fix the original wafer according to the preset coordinates; The control discharge module is used to obtain a detection instruction and send the detection instruction to a control system, so that the control system controls the upper and lower electrodes to discharge to obtain a vibration signal of the original wafer; The frequency acquisition module is used to obtain the regional vibration frequency after preprocessing the vibration signal.

8. The frequency adjustment control device of an ultra-high frequency chip according to claim 6, characterized in that: The regional etching module also includes: a device initialization module and a working parameter update module: The device initialization module is used to initialize the laser etching device and update the target value of the laser etching device according to the target frequency; The working parameter updating module is used to obtain the feature code of the coated wafer in the feature database, determine the working parameters of each abnormal area according to the feature code, and determine whether to execute the laser etching command according to the target offset frequency.

9. The frequency adjustment control device of an ultra-high frequency chip according to claim 8, characterized in that: The working parameter updating module also includes: a coating thickness acquisition module, a correction quality acquisition module and a working parameter determination module: The coating thickness acquisition module is used to acquire the first vibration frequency of the original wafer and the second vibration frequency of the coated wafer, and calculate the coating thickness according to the first vibration frequency and the second vibration frequency; the wafer and the abnormal area are in one-to-one correspondence; The correction quality acquisition module is used to determine the coating density and the correction area according to the characteristic code of the coated wafer, and calculate the correction quality according to the coating thickness, the coating density and the correction area; The working parameter determination module is used to obtain the original area of ​​the coated wafer, calculate the target frequency according to the second vibration frequency, the original area and the correction mass, and determine the working parameters of the laser etching equipment according to the correction mass and the target frequency.

10. The frequency adjustment control device of an ultra-high frequency chip according to claim 8, characterized in that: The working parameter updating module also includes: a good product judgment module and an etching execution module: The good product judgment module is used to calculate the target offset frequency according to the second vibration frequency and the target frequency, and judge whether the wafer is a defective product according to the offset frequency; The etching execution module is used to judge the wafer as defective and remove the abnormal area if the target offset frequency is greater than the offset frequency threshold, or the correction area is greater than the original area; otherwise, execute the laser etching command.

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