A method, system and storage medium for increasing the service life of nitrogen and oxygen sensors

Abstract

The present invention relates to the technical field of nitrogen oxide sensors and discloses a method, system, and storage medium for increasing the service life of nitrogen oxide sensors. The method comprises the following steps: S1, heating the heating wire of a nitrogen oxide sensor ceramic chip and stabilizing the temperature at a set value; S2, outputting the current heating wire temperature and starting a ceramic chip pump unit control program; S3, monitoring the main pump electrode voltage V0 in the first chamber of the ceramic chip; S4, if V0 > 1V, further heating the heating wire to increase the heating wire temperature; and S5, repeating steps S2 to S4 until V0 ≤ 1V. The present invention changes the state of the existing ceramic chip, which is always at a constant operating temperature, by increasing the temperature of the ceramic chip heating wire when the main pump electrode voltage in the first chamber is about to exceed the failure set value. This increases the activity of the ceramic chip's pump electrode, zirconium oxide layer, and other functional layers, thereby enhancing the oxygen pumping capacity of each chamber and reducing the voltage of each pump electrode, particularly the main pump electrode voltage in the first chamber. This extends the service life of the ceramic chip, thereby improving the product life.

Description

Technical Field

[0001] The present invention relates to the technical field of nitrogen oxide sensors, and in particular to a method, system and storage medium for increasing the service life of a nitrogen oxide sensor. Background Art

[0002] With the rapid development of the world economy, the number of cars in various countries continues to rise, and automobile exhaust emissions have caused huge environmental pollution, including NO x Pollution. Nitrogen oxygen sensor can detect NO in automobile exhaust. x The nitrogen oxide sensor includes a ceramic chip and its controller.

[0003] The control logic for the NOx sensor's ceramic chip is as follows: After the heating filament temperature is controlled to a set value, the pump unit control begins operation, maintaining the ceramic chip at a constant set temperature. However, over time, the ceramic chip experiences a decrease in oxygen ion conductivity due to aging of the chip's pump electrodes and zirconium oxide layer. This weakens the oxygen pumping capacity of the electrodes in each chamber of the ceramic chip, causing the voltage of each pump electrode to increase. The first chamber pumps the most oxygen, resulting in the most significant increase in the voltage of the first chamber's main pump electrode. When the voltage of the first chamber's main pump electrode reaches the upper limit set by the controller, the NOx sensor fails, ending its lifecycle.

[0004] In view of this, this application is hereby filed. Summary of the Invention

[0005] Problems with the prior art: When the voltage value of the main pump electrode of the first chamber of the sensor ceramic chip increases to the upper limit set by the controller, the nitrogen oxygen sensor will fail and its life cycle will end. The present invention provides a method, system and storage medium for increasing the service life of the nitrogen oxygen sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, the temperature of the ceramic chip heating wire is increased, thereby changing the state of the existing ceramic chip always being at a constant operating temperature, increasing the activity of functional layers such as the ceramic chip pump electrode and zirconium oxide layer, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, extending the service life of the ceramic chip, and thus improving the product life.

[0006] The present invention is achieved through the following technical solutions:

[0007] In a first aspect, the present invention provides a method for increasing the service life of a nitrogen oxide sensor, comprising the following steps:

[0008] During the use of the nitrogen oxide sensor ceramic chip, the voltage V0 of the main pump electrode in the first chamber is monitored. If V0>1V, the temperature of the heating wire is increased.

[0009] In a specific embodiment, the method for increasing the service life of the nitrogen oxide sensor comprises the following steps:

[0010] S1, heat the heating wire of the nitrogen oxide sensor ceramic chip and stabilize the temperature at the set value;

[0011] S2, outputs the current heating wire temperature and starts the ceramic chip pump unit control program;

[0012] S3, monitoring the voltage V0 of the main pump electrode in the first cavity of the ceramic chip;

[0013] S4, if V0>1V, further heat the heating wire to increase the temperature of the heating wire;

[0014] S5, repeat steps S2 to S4 until V0≤1V.

[0015] In a specific embodiment, in step S1, the set value of the heating wire temperature is ≥800°C.

[0016] In a specific embodiment, in step S2, the specific method of the ceramic chip pump unit control program is:

[0017] Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature;

[0018] According to the Nernst voltages U0, U1, and U2 calculated at the current temperature, the main pump electrode voltage V0, the auxiliary pump electrode voltage V1, and the measurement pump electrode voltage V2 are adjusted.

[0019] The principle of Nernst voltage controlling electrode voltage is as follows:

[0020] In dynamic regulation, the electrode voltage V is adjusted by PID algorithm so that the Nernst voltage U measured Stabilize to target value U target :

[0021]

[0022] K P , K i , K d : Proportional, integral and differential coefficients of PID control.

[0023] Take the Nernst voltage U0 to adjust the main pump electrode voltage V0 as an example:

[0024] The exhaust gas enters the main pump chamber, and the measured gas partial pressure P of the exhaust gas is relatively high, and the Nernst U0 is measured. measuredDeviate from the target value U0; apply pump electrode voltage V0, pump out O2, reduce U0 measured value, so that U0 measured Stabilize to U0.

[0025] In a specific embodiment, the temperature of the heating wire is not higher than 950° C. Above this temperature, it is difficult to reduce the voltage even if the temperature is increased further, and the chip may fail due to excessive temperature.

[0026] In a specific embodiment, the oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

[0027] In a specific embodiment, the calculation formula of the Nernst voltage is as follows:

[0028] ;

[0029] Where U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

[0030] In a specific embodiment, the heating wire is heated by PWM pulses.

[0031] In a second aspect, the present invention provides a control system for increasing the service life of a nitrogen oxide sensor, comprising a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module;

[0032] The heating module is used to heat the ceramic chip heating wire;

[0033] The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module;

[0034] The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each cavity of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each cavity;

[0035] The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, the module outputs a signal to the heating module to further heat the heating wire.

[0036] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxide sensor are implemented.

[0037] Compared with the prior art, the present invention has the following advantages and beneficial effects:

[0038] An embodiment of the present invention provides a method, system, and storage medium for increasing the service life of a nitrogen oxide sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, the temperature of the ceramic chip heating wire is increased, thereby changing the state of the existing ceramic chip always being at a constant operating temperature, increasing the activity of functional layers such as the ceramic chip pump electrode and zirconium oxide layer, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, extending the service life of the ceramic chip, and thus improving the product life. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without making any creative efforts.

[0040] Figure 1 The ceramic chip pump unit control logic provided by the present invention;

[0041] Figure 2 A flow chart of a method for increasing the service life of a nitrogen oxide sensor provided in an embodiment of the present invention;

[0042] Figure 3 The volt-ampere characteristic curves of the chamber provided by the present invention under different oxygen contents. DETAILED DESCRIPTION

[0043] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with examples and drawings. The exemplary embodiments of the present invention and their descriptions are only used to explain the present invention and are not intended to limit the present invention.

[0044] In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that these specific details are not necessarily required to practice the present invention. In other embodiments, well-known materials or methods are not specifically described to avoid obscuring the present invention.

[0045] Throughout this specification, references to "one embodiment," "an embodiment," "an example," or "an example" mean that a particular feature, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present invention. Thus, appearances of the phrases "one embodiment," "an embodiment," "an example," or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combinations and / or subcombinations in one or more embodiments or examples. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0046] In the description of the present invention, the terms "front", "back", "left", "right", "up", "down", "vertical", "horizontal", "high", "low", "inside", "outside", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they should not be understood as limiting the scope of protection of the present invention.

[0047] At present, when the voltage value of the main pump electrode of the first chamber of the sensor ceramic chip increases to the upper limit set by the controller, the nitrogen oxygen sensor will fail and its life cycle will end. The present invention provides a method, system and storage medium for increasing the service life of the nitrogen oxygen sensor. When the voltage of the main pump electrode of the first chamber is about to exceed the failure setting value, the temperature of the ceramic chip heating wire is increased, thereby changing the state of the existing ceramic chip always being at a constant operating temperature, increasing the activity of functional layers such as the ceramic chip pump electrode and zirconium oxide layer, thereby enhancing the oxygen pumping capacity of each chamber, reducing the voltage of each pump electrode, especially the voltage of the main pump electrode of the first chamber, extending the service life of the ceramic chip, and thus improving the product life.

[0048] The present invention is achieved through the following technical solutions:

[0049] In a first aspect, the present invention provides a method for increasing the service life of a nitrogen oxide sensor, comprising the following steps:

[0050] During the use of the nitrogen oxide sensor ceramic chip, the voltage V0 of the main pump electrode in the first chamber is monitored. If V0>1V, the temperature of the heating wire is increased.

[0051] In a specific embodiment, the method for increasing the service life of the nitrogen oxide sensor comprises the following steps:

[0052] S1, heat the heating wire of the nitrogen oxide sensor ceramic chip and stabilize the temperature at the set value;

[0053] S2, outputs the current heating wire temperature and starts the ceramic chip pump unit control program;

[0054] S3, monitoring the voltage V0 of the main pump electrode in the first cavity of the ceramic chip;

[0055] S4, if V0>1V, further heat the heating wire to increase the temperature of the heating wire;

[0056] S5, repeat steps S2 to S4 until V0≤1V.

[0057] In a specific embodiment, in step S1, the set value of the heating wire temperature is ≥800°C.

[0058] In a specific embodiment, in step S2, the specific method of the ceramic chip pump unit control program is:

[0059] Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature;

[0060] According to the Nernst voltages U0, U1, and U2 calculated at the current temperature, the main pump electrode voltage V0, the auxiliary pump electrode voltage V1, and the measurement pump electrode voltage V2 are adjusted.

[0061] The principle of Nernst voltage controlling electrode voltage is as follows:

[0062] In dynamic regulation, the electrode voltage V is adjusted by PID algorithm so that the Nernst voltage U measured Stabilize to target value U target :

[0063]

[0064] K P , K i , K d : Proportional, integral and differential coefficients of PID control.

[0065] Take the Nernst voltage U0 to adjust the main pump electrode voltage V0 as an example:

[0066] The exhaust gas enters the main pump chamber, and the measured gas partial pressure P of the exhaust gas is relatively high, and the Nernst U0 is measured. measured Deviate from the target value U0; apply pump electrode voltage V0, pump out O2, reduce U0 measured value, so that U0 measured Stabilize to U0.

[0067] In a specific embodiment, the temperature of the heating wire is not higher than 950° C. Above this temperature, it is difficult to reduce the voltage even if the temperature is increased further, and the chip may fail due to excessive temperature.

[0068] In a specific embodiment, the oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

[0069] In a specific embodiment, the calculation formula of the Nernst voltage is as follows:

[0070] ;

[0071] Where U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

[0072] In a specific embodiment, the heating wire is heated by PWM pulses.

[0073] In a second aspect, the present invention provides a control system for increasing the service life of a nitrogen oxide sensor, comprising a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module;

[0074] The heating module is used to heat the ceramic chip heating wire;

[0075] The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module;

[0076] The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each cavity of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each cavity;

[0077] The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, the module outputs a signal to the heating module to further heat the heating wire.

[0078] In a third aspect, the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxide sensor are implemented.

[0079] Comparative Example

[0080] This comparative example provides a nitrogen oxygen sensor, such as Figure 1As shown, P0: the first chamber, also called the main pump chamber; P1: the second chamber, also called the auxiliary pump chamber; P2: the third chamber, also called the measuring pump chamber; V0: the main pump electrode voltage; V1: the auxiliary pump electrode voltage; V2: the measuring pump electrode voltage; IP0: the main pump current; IP1: the auxiliary pump current; IP2: the measuring pump current; U: the exhaust gas reference voltage; U0: the main pump chamber Nernst voltage; U1: the auxiliary pump chamber Nernst voltage; U2: the measuring pump chamber Nernst voltage; Ref: the air reference electrode; R H : Heating electrode; arrows indicate current flow and have no meaning.

[0081] At present, the control logic of the ceramic chip pump unit is as follows: the ceramic chip works normally at a high temperature constant temperature of 800℃, the exhaust gas enters the first chamber through the diffusion channel, and under the action of the main pump electrode voltage V0, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U0=400mV, that is, the oxygen concentration is 0.1ppm; the gas in the first chamber continues to diffuse to the second chamber through the diffusion channel, and under the action of the auxiliary pump voltage V1, the gas concentration is adjusted to a concentration where the Nernst voltage is U1=450mV, that is, the oxygen concentration is 0.01ppm, NO x The NO2 in the exhaust is decomposed into NO and O2; the exhaust gas diffuses into the third chamber, and under the action of the measuring pump voltage V2, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U2=500mV, that is, the oxygen concentration is 0.001ppm. At this time, the NO gas in the exhaust gas is decomposed into N2 and O2 by the catalyst, and NO can be indirectly measured by measuring the limiting current IP2 of the measuring pump O2. x concentration.

[0082] When the oxygen concentration in the chamber is constant, the pump current increases with the applied voltage. When the applied voltage exceeds a certain value, the pump current of the ceramic chip no longer changes with the increase of the applied voltage and reaches a limit value, which is called the limiting current. Figure 3 Shown are the volt-ampere characteristic curves under different oxygen concentrations.

[0083] At this point, the ceramic chip is in normal service and working order. As the ceramic chip ages, its oxygen pumping capacity decreases, and the voltages at each pump electrode increase. When the voltage at the main pump electrode in the first chamber exceeds the set value, the NOx sensor fails. Currently, the service life of existing NOx sensors is approximately 6,000 hours. The main failure modes include chip aging, heater failure, and sensor control circuit failure.

[0084] Example 1

[0085] like Figure 1 and Figure 2As shown, this embodiment provides a method for increasing the service life of a nitrogen oxide sensor, which is as follows: the automobile engine is started, the ceramic chip is preheated, and then the ceramic chip heating wire is heated by PWM pulse heating, and the PT resistance temperature is checked at the same time, and then the heating wire temperature is detected to be ≥800°C. If it has not reached, heating is continued. If it has reached, the current temperature T1 is output, and the ceramic chip pump unit control program is turned on. The ceramic chip works normally in the constant temperature T1 state, and the exhaust gas enters the first chamber through the diffusion channel. Under the action of the main pump voltage V0, the oxygen concentration is adjusted to a concentration where the Nernst voltage is U0=400mV, that is, the oxygen concentration is 0.1ppm; the gas in the first chamber continues to diffuse to the second chamber through the diffusion channel. Under the action of the auxiliary pump voltage V1, the gas concentration is adjusted to a concentration where the Nernst voltage is U1=450mV, that is, the oxygen concentration is 0.01ppm, NO x The NO2 in the exhaust is decomposed into NO and O2; the exhaust gas diffuses into the third chamber, and under the action of the measuring pump voltage V2, the gas concentration is adjusted to a concentration where the Nernst voltage is U2=500mV, that is, the oxygen concentration is 0.001ppm. At this time, the NO gas in the exhaust gas is decomposed into N2 and O2 by the catalyst, and the NO is indirectly measured by measuring the limiting current IP2 of the measuring pump O2. x concentration.

[0086] As time goes by, the chip continues to age, the oxygen ion conductivity of the zirconium oxide layer decreases, and the voltage of each pump electrode increases. When it is detected that the main pump electrode voltage V0 of the ceramic chip is greater than 1V, the PWM pulse heating further heats the ceramic chip heating wire to increase the heating wire temperature to T2, and the current T2 value is returned to the ceramic chip pump unit control program for calculation. The oxygen concentration at the current temperature is 0.1ppm, 0.01ppm and 0.001ppm, corresponding to the Nernst voltages U0, U1 and U2; according to the actual values ​​of the above parameters, the main pump electrode voltage V0, the auxiliary pump electrode voltage V1 and the measurement pump electrode voltage V2 are controlled, and the main pump V0 is judged again. If V0>1V, the above heating wire temperature increase process is repeated; if V0≤1V, the heating wire temperature adjustment is completed, and the limiting current parameter IP2 is obtained, which is the indirect measurement of NO x The NOx sensor chip can continue to operate normally at the current elevated temperature, thus extending the service life of the NOx sensor product.

[0087] In the present invention, after the chip can continue to be used normally for a period of time after the T value is improved, if it is monitored that V0>1V, the life can be further extended by heating, so that V0≤1V; when the temperature of the heating wire reaches the maximum power supply heating capacity limit of the control system or the set value of 950℃, the chip will fail due to excessive temperature and the life cannot be extended by heating.

[0088] The method of the present invention is mainly a method for extending the life of nitrogen oxide sensors caused by chip aging. Under the condition that the functional layer and heating wire material of the nitrogen oxide sensor chip are working normally, the control method of the present invention can increase the service life of the nitrogen oxide sensor by 10%.

[0089] As the ceramic chip's temperature rises, the migration rate of oxygen ions in the ZrO2 electrolyte increases, intensifying the thermal motion of gas molecules and thus affecting the gas's diffusion rate and coefficient. Specifically, for a constant oxygen concentration within the chamber, the ceramic chip's temperature changes the rate of rise of the volt-ampere characteristic curve without altering its limiting value. When the pump electrode voltage in each chamber of the ceramic chip exceeds a certain value, the pump current IP reaches its limiting value. This value is dependent solely on the O2 concentration and is unrelated to factors such as temperature.

[0090] Example 2

[0091] The embodiment of the present invention provides a control system for increasing the service life of a nitrogen and oxygen sensor, comprising a heating module, a temperature detection module, a ceramic chip pump unit control module, and a main pump electrode voltage monitoring module;

[0092] The heating module is used to heat the ceramic chip heating wire;

[0093] The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module;

[0094] The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each cavity of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each cavity;

[0095] The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, the module outputs a signal to the heating module to further heat the heating wire.

[0096] Example 3

[0097] An embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the method for increasing the service life of a nitrogen oxide sensor are implemented.

[0098] The specific implementation methods described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific implementation method of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for increasing the service life of a nitrogen oxide sensor, characterized in that: The steps include: S1, heating the heating wire of the nitrogen and oxygen sensor ceramic chip and keeping the temperature constant at the chip working set value to complete the chip startup, the set value is ≥800°C; S2, outputs the current heating wire temperature and starts the ceramic chip pump unit control program; S3, monitoring the voltage V0 of the main pump electrode in the first cavity of the ceramic chip; S4, if V0>failure setting value, further heat the heating wire to increase the heating wire temperature, the failure setting value is 1V; the temperature of the heating wire is not higher than 950℃; S5, repeat steps S2 to S4 until V0≤1V.

2. The method for increasing the service life of a nitrogen oxide sensor according to claim 1, characterized in that: In step S2, the specific method of the ceramic chip pump unit control program is: Output the current heating wire temperature T to the controller of the ceramic chip pump unit control program, and calculate the corresponding Nernst voltages U0, U1, and U2 when the oxygen concentrations in the first chamber, the second chamber, and the third chamber remain unchanged at the current temperature; According to the Nernst voltages U0, U1, and U2 calculated at the current temperature, the main pump electrode voltage V0, the auxiliary pump electrode voltage V1, and the measurement pump electrode voltage V2 are adjusted.

3. The method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: The oxygen concentration in the first chamber is 0.1 ppm, the oxygen concentration in the second chamber is 0.01 ppm, and the oxygen concentration in the third chamber is 0.001 ppm.

4. The method for increasing the service life of a nitrogen oxide sensor according to claim 2, characterized in that: The calculation formula of the Nernst voltage is as follows: ； Where U is the Nernst voltage; R is the ideal gas constant; F is the Faraday constant; T is the temperature; P0 is the reference gas partial pressure; P is the measured gas partial pressure; U0 is the background electromotive force, which is independent of temperature.

5. The method for increasing the service life of a nitrogen oxide sensor according to claim 1, characterized in that: The heating wire is heated by PWM pulses.

6. A control system for implementing the method for increasing the service life of a nitrogen oxide sensor according to any one of claims 1 to 5, characterized in that: Including heating module, temperature detection module, ceramic chip pump unit control module, main pump electrode voltage monitoring module; The heating module is used to heat the ceramic chip heating wire; The temperature detection module is used to detect the temperature value of the ceramic chip heating wire and output it to the ceramic chip pump unit control module; The ceramic chip pump unit control module is used to calculate the real-time Nernst voltage of each cavity of the ceramic chip according to the received heating wire temperature value, and adjust the electrode voltage of each cavity; The main pump electrode voltage monitoring module is used to monitor the main pump electrode voltage in the first chamber in real time. When the main pump electrode voltage is greater than 1V, the module outputs a signal to the heating module to further heat the heating wire.

7. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of the method for increasing the service life of a nitrogen oxide sensor according to any one of claims 1 to 5.

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