Flash memory particle grading method, device and medium based on erasure time

Abstract

The present application discloses a flash memory particle grading method, device and medium based on erasure time. First, test data of flash memory particles in multiple test scenarios with different temperatures are obtained, where the temperature of the first test scenario is higher than that of the second test scenario. Then, based on these test data, multiple blocks in the flash memory particles are graded, and these blocks are marked as the first type of blocks and the second type of blocks according to the grading results, where the performance level of the first type of blocks is lower than that of the second type of blocks. Finally, the quality of the flash memory particles is determined by counting the number of the first type of blocks and the second type of blocks in multiple blocks. Compared with the existing standard that only judges based on simple high and low temperature erase, write and read failures, the grading method of the embodiment of the present application comprehensively considers the test data in different temperature scenarios and can achieve more refined and comprehensive flash memory particle grading.

Description

Technical Field

[0001] The embodiments of the present application relate to, but are not limited to, the field of flash memory analysis, and particularly to a method, device, and medium for flash memory particle grading based on erasure time. Background Art

[0002] In the field of information storage, flash memory products are widely used in various electronic devices such as smart phones and solid-state drives due to their advantages of small size, fast read and write speeds, etc. Before the products enter the market, screening and grading are key links to ensure the consistency of product quality.

[0003] Currently, the commonly used method for screening and grading flash memory particles in the industry is to conduct a round of high and low temperature tests, and complete the screening only based on whether there are read / write failures of the flash memory particles in high and low temperature environments. Although this method can exclude obviously defective products, it has great limitations. On the one hand, it ignores the performance differences such as the erase speed, read speed, and durability of flash memory particles. Even if there are no read / write failures, the performances of different particles in actual use may vary greatly. For example, in a solid-state drive, this will result in significant differences in read and write speeds experienced by different users. On the other hand, with the expansion of flash memory application scenarios, the existing screening and grading method based only on read / write failures in high and low temperature erasures cannot accurately evaluate the performance of flash memory particles in these complex application scenarios, and it is difficult to ensure the stability and reliability of the products during long-term use. Summary of the Invention

[0004] The following is an overview of the subject matter described in detail in this document. This overview is not intended to limit the scope of protection of the claims.

[0005] The embodiments of the present application provide a method, device, and medium for flash memory particle grading based on erasure time, which can achieve more refined and comprehensive flash memory particle grading.

[0006] In a first aspect, the embodiments of the present application provide a method for flash memory particle grading based on erasure time, the method including: obtaining test data of flash memory particles in a plurality of first test scenarios and second test scenarios, where the temperature of the first test scenario is higher than the temperature of the second test scenario; grading a plurality of blocks in the flash memory particles according to the test data, and marking the plurality of blocks as first-class blocks and second-class blocks according to the grading result, where the performance level of the first-class blocks is lower than the performance level of the second-class blocks; determining the quality of the flash memory particles according to the number of the first-class blocks and the second-class blocks among the plurality of blocks.

[0007] In an embodiment of the present application, the step of obtaining the test data of the flash memory particles under multiple first test scenarios and second test scenarios includes: in the first test scenario, repeatedly obtaining the first erasure time series of the flash memory particles; when the test scenario is the first test scenario, converting the first test scenario to the second test scenario and repeatedly obtaining the second erasure time series of the flash memory particles; when the test scenario is the second test scenario, converting the second test scenario to the first test scenario and obtaining the third erasure time series of the flash memory particles; when the test scenario is the first test scenario, converting the first test scenario to the second test scenario and obtaining the fourth erasure time series of the flash memory particles; when the test scenario is the second test scenario, converting the second test scenario to the first test scenario and obtaining the fifth erasure time series of the flash memory particles; when the test scenario is the first test scenario, converting the second test scenario to the second test scenario and obtaining the sixth erasure time series of the flash memory particles; and obtaining the test data according to the first erasure time series, the second erasure time series, the third erasure time series, the fourth erasure time series, the fifth erasure time series and the sixth erasure time series.

[0008] In an embodiment of the present application, the step of grading multiple blocks in the flash memory particles according to the test data and marking multiple blocks as first type blocks and second type blocks according to the grading result includes: calculating according to the first erasure time series and the second erasure time series to obtain a first time average value; calculating a second time average value according to the first time average value, the third erasure time series and the fourth erasure time series; calculating a time evaluation series of two test scenarios according to the first time average value, the fifth erasure time series and the sixth erasure time series; grading multiple blocks in the flash memory particles according to each time evaluation series and the second time average value, and marking multiple blocks as first type blocks and second type blocks according to the grading result.

[0009] In an embodiment of the present application, calculating the first time mean according to the first erasure time series and the second erasure time series includes: obtaining the first erasure time of each block in all the same erasure rounds according to the first erasure time series; calculating according to the first erasure time of each block in all the same erasure rounds to obtain the first erasure time means in multiple rounds; obtaining the second erasure time of each block in all the same erasure rounds according to the second erasure time series; calculating according to the second erasure time of each block in all the same erasure rounds to obtain the second erasure time means in multiple rounds; taking the mean of the first erasure time means in multiple rounds and the second erasure time means in multiple rounds to obtain the first time mean.

[0010] In an embodiment of the present application, calculating the second time mean according to the first time mean, the third erasure time series and the fourth erasure time series includes: obtaining the third erasure time of each block according to the third erasure time series; calculating the first time variance according to the third erasure time of each block and the first time mean; obtaining the fourth erasure time of each block according to the fourth erasure time series; calculating the second time variance according to the fourth erasure time of each block and the first time mean; calculating according to the first time variance and the second time variance to obtain the second time mean.

[0011] In an embodiment of the present application, grading multiple blocks in the flash memory particles according to each time evaluation series and the second time mean, and marking the multiple blocks as first-class blocks and second-class blocks according to the grading results includes: obtaining the erasure time evaluation values corresponding to each block in the two test scenarios according to each time evaluation series; comparing the erasure time evaluation values corresponding to each block in the two test scenarios with the second time mean respectively, and grading the multiple blocks in the flash memory particles according to the comparison results; marking the multiple blocks as first-class blocks and second-class blocks according to the grading results.

[0012] In an embodiment of the present application, marking the multiple blocks as first-class blocks and second-class blocks according to the grading results includes: if the absolute value of the difference between the erasure time evaluation value of the block and the second time mean is greater than a preset threshold, marking the block as a first-class block; if the absolute value of the difference between the erasure time evaluation value of the block and the second time mean is less than or equal to the preset threshold, marking the block as a second-class block.

[0013] In an embodiment of the present application, determining the quality of the flash memory particles according to the number of the first type of blocks and the second type of blocks among multiple blocks includes: if all multiple blocks are the second type of blocks, determining the flash memory particles as good products; if multiple blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks among multiple blocks is less than a preset threshold, determining the flash memory particles as sub-good products; if multiple blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks among multiple blocks is greater than the preset threshold, determining the flash memory particles as defective products.

[0014] On the other hand, an embodiment of the present application provides an electronic device, which includes a processor, a memory, and a computer program stored on the memory and executable by the processor. When the computer program is executed by the processor, it implements the method for grading flash memory particles based on the erasure time as described above.

[0015] On the other hand, an embodiment of the present application provides a computer-readable storage medium, in which a program executable by a processor is stored. The program executable by the processor is used to execute the method for grading flash memory particles based on the erasure time as described above when executed by the processor.

[0016] A method for grading flash memory particles based on the erasure time provided by an embodiment of the present application first obtains test data of the flash memory particles in multiple test scenarios with different temperatures, where the temperature of the first test scenario is higher than that of the second test scenario. Then, based on these test data, multiple blocks in the flash memory particles are carefully graded, and these blocks are marked as the first type of blocks and the second type of blocks according to the grading results, where the performance level of the first type of blocks is lower than that of the second type of blocks. Finally, by counting the number of the first type of blocks and the second type of blocks among multiple blocks, the quality of the flash memory particles is accurately determined. Compared with the existing standard that only judges based on simple high and low temperature erase-write-read failure, the grading method of the embodiment of the present application comprehensively considers the test data in different temperature scenarios and can achieve more refined and comprehensive grading of flash memory particles. Description of the Drawings

[0017] Figure 1 is a flowchart of the method for grading flash memory particles based on the erasure time provided by an embodiment of the present application;

[0018] Figure 2 is provided by an embodiment of the present application Figure 1 specific flowchart of step 110 therein;

[0019] Figure 3 is provided by an embodiment of the present application Figure 1 specific flowchart of step 120 therein;

[0020] Figure 4 It is provided by an embodiment of the present application Figure 3 and is the specific flowchart of step 310 in

[0021] Figure 5 It is provided by an embodiment of the present application Figure 3 and is the specific flowchart of step 320 in Detailed implementation manners

[0022] In order to make the objectives, technical solutions and advantages of the present application more clear and understandable, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0023] It should be noted that although the logical order is shown in the flowchart, in some cases, the steps shown or described may be executed in a different order from that in the flowchart. Terms such as "first" and "second" in the specification, claims and the above-mentioned drawings are used to distinguish similar objects and do not necessarily need to describe a specific order or sequence. It should be noted that the structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those skilled in this technology to understand and read, and are not used to limit the limiting conditions under which the present application can be implemented. Therefore, they do not have a technical essence. Any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects that the present application can produce and the objectives that can be achieved, should still fall within the scope covered by the technical content disclosed in the present application. At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for the convenience of clear narration and are not used to limit the scope in which the present application can be implemented. The change or adjustment of their relative relationships, without substantial change in the technical content, should also be regarded as the scope in which the present application can be implemented.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0025] In the production process of flash memory products, the screening and grading links before entering the market are crucial. This link not only determines whether the products can meet the performance requirements of different customers, but also is a key step to ensure the quality consistency of flash memory products on the market.

[0026] Currently, the commonly used method for flash memory particle screening and grading in the industry is to conduct a round of high and low temperature tests. During this test process, only whether the flash memory particles experience read / write / erase failures in high and low temperature environments is used to determine whether they are qualified, and the screening work is completed. Although this method can, to a certain extent, eliminate flash memory particles with obvious defects, its grading results are not fine enough and have many limitations.

[0027] On the one hand, the performance of flash memory particles does not solely depend on the simple criterion of whether read / write / erase failures occur. In actual use, even if the flash memory particles do not experience failures in high and low temperature tests, there may still be significant differences in key performance indicators such as erase speed, read speed, and durability among different particles. These performance differences will result in uneven actual performance of different flash memory particles in the same usage scenario, affecting the user experience. On the other hand, with the continuous development of flash memory technology and the increasing diversification of application scenarios, the requirements for the performance of flash memory particles are also getting higher and higher. For example, in some high-performance computing scenarios with extremely high requirements for data read / write speed and stability, and in industrial control fields with stringent requirements for the durability and reliability of flash memory, the existing simple screening and grading methods can no longer meet the needs. The existing screening and grading method based solely on read / write / erase failures in high and low temperature cannot accurately evaluate the performance of flash memory particles in these complex application scenarios, and it is difficult to ensure the stability and reliability of the product during long-term use.

[0028] In view of this, the embodiments of this application provide a flash memory particle grading method, an electronic device, and a computer-readable storage medium based on erase time. In this method, first, test data of the flash memory particles in multiple test scenarios with different temperatures are obtained, where the temperature of the first test scenario is higher than that of the second test scenario. Then, based on these test data, multiple blocks in the flash memory particles are carefully graded, and these blocks are marked as the first type of blocks and the second type of blocks according to the grading results, where the performance level of the first type of blocks is lower than that of the second type of blocks. Finally, by counting the number of the first type of blocks and the second type of blocks in multiple blocks, the quality of the flash memory particles is accurately determined. Compared with the existing standard based solely on simple read / write / erase failures in high and low temperature, the grading method of the embodiments of this application comprehensively considers the test data in different temperature scenarios and can achieve more refined and comprehensive flash memory particle grading.

[0029] Next, in conjunction with the accompanying drawings, the embodiments of this application will be further elaborated.

[0030] Refer to Figure 1 , Figure 1 which is a flowchart of the flash memory particle grading method based on erase time provided by the embodiments of this application. This process may specifically include but is not limited to steps 110 to 130.

[0031] Step 110: Obtain the test data of the flash memory particles under multiple first test scenarios and second test scenarios, where the temperature of the first test scenario is higher than that of the second test scenario;

[0032] Step 120: Classify multiple blocks in the flash memory particles according to the test data, and mark the multiple blocks as first-class blocks and second-class blocks according to the classification results, where the performance level of the first-class blocks is lower than that of the second-class blocks;

[0033] Step 130: Determine the quality of the flash memory particles according to the number of first-class blocks and second-class blocks in the multiple blocks.

[0034] The following elaborates on Steps 110 to 130 in detail.

[0035] In a feasible embodiment, in order to comprehensively evaluate the performance of the flash memory particles in different temperature environments, this embodiment sets two test scenarios with different temperatures, namely the first test scenario and the second test scenario, and the temperature of the first test scenario is higher. The flash memory particles are tested under multiple first test scenarios and second test scenarios, and the relevant data is recorded. These test data include the erase time of the flash memory particles. By obtaining multiple sets of test data under different temperature scenarios, the fluctuation of the erase time of the flash memory particles under different temperature conditions can be more comprehensively understood.

[0036] In a feasible embodiment, after obtaining the test data of each scenario, a certain classification standard can be further formulated according to the test data to classify multiple blocks in the flash memory particles. For example, classification can be carried out according to the length of the erase time. The shorter the erase time, the better the performance of the block. According to the classification results, the multiple blocks are divided into first-class blocks and second-class blocks, and it is stipulated that the performance level of the first-class blocks is lower than that of the second-class blocks. This classification and marking helps the subsequent evaluation of the overall performance of the flash memory particles.

[0037] In a feasible embodiment, the quantity ratio of the first-class blocks and the second-class blocks can reflect the overall performance and quality of the flash memory particles. If the number of second-class blocks in the flash memory particles is large, it indicates that the flash memory particles have better performance under different temperature scenarios, and then it can be considered that the quality of the flash memory particles is high; on the contrary, if the number of first-class blocks is large, it indicates that the quality of the flash memory particles is relatively low.

[0038] In a feasible embodiment, in order to improve the accuracy of classification, during the process of obtaining the test data in this embodiment, multiple full-disk erasures and related operations are performed on the flash memory particles. As Figure 2 shown, the execution process of Step 110 may include but is not limited to Steps 210 to 270.

[0039] Step 210: In the first test scenario, repeatedly obtain the first erasure time series of the flash memory particles for multiple times;

[0040] Step 220: When the test scenario is the first test scenario, convert the first test scenario to the second test scenario, and repeatedly obtain the second erasure time series of the flash memory particles for multiple times;

[0041] Step 230: When the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain the third erasure time series of the flash memory particles;

[0042] Step 240: When the test scenario is the first test scenario, convert the first test scenario to the second test scenario, and obtain the fourth erasure time series of the flash memory particles;

[0043] Step 250: When the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain the fifth erasure time series of the flash memory particles;

[0044] Step 260: When the test scenario is the first test scenario, convert the second test scenario to the second test scenario, and obtain the sixth erasure time series of the flash memory particles;

[0045] Step 270: Obtain test data based on the first erasure time series, the second erasure time series, the third erasure time series, the fourth erasure time series, the fifth erasure time series, and the sixth erasure time series.

[0046] It can be understood that in a flash memory particle, the minimum unit of the erasure operation is a block, and a flash memory particle usually contains thousands of blocks. Generally speaking, for blocks with slightly weaker performance or mechanical failures, their erasure time is longer compared to blocks with better performance. Especially for blocks with mechanical failures, it is very likely to directly cause erasure failure.

[0047] In a feasible embodiment, the operation of obtaining the first erasure time series of the flash memory particles is as follows: repeatedly obtain the erasure time of each block of the flash memory particles in the first test scenario for multiple times. The erasure time of each block obtained each time can form a round of erasure records, and the multiple rounds of erasure records obtained for multiple times are integrated to obtain the first erasure time series.

[0048] Further, after obtaining the first erasure time series, the test scenario needs to be converted from the first test scenario to the second test scenario, for example, by reducing the test temperature. The method of obtaining the second erasure time series of the flash memory particles is similar to that of the first erasure time series, which is also to repeatedly obtain the erasure time of each block in the second test scenario for multiple times, and combine multiple rounds of erasure records to obtain the second erasure time series.

[0049] Further, after obtaining the second erasure time series, the test scenario is converted back to the first test scenario, and then the third erasure time series is obtained. Different from obtaining the first erasure time series, this time only one round of erasure times of each block in the first test scenario is obtained, and the erasure times of each block in this round are the third erasure time series.

[0050] Further, after obtaining the third erasure time series, the test scenario is converted to the second test scenario again, and then the fourth erasure time series is obtained. The difference from obtaining the second erasure time series is that only one round of erasure times of each block in the second test scenario is obtained, and the result of this round is the fourth erasure time series.

[0051] Further, after obtaining the fourth erasure time series, the test scenario is converted back to the first test scenario to obtain the fifth erasure time series, and the process is similar to obtaining the third erasure time series.

[0052] In a feasible embodiment, after obtaining the fifth erasure time series, the test scenario can be continuously converted from the first test scenario to the second test scenario, and then the sixth erasure time series of the flash memory particles is obtained. This process is similar to obtaining the fourth erasure time series. It should be noted that after obtaining the fourth erasure time series, there is another operation sequence: the sixth erasure time series of the flash memory particles can be obtained first in the current second test scenario, and then the temperature of the test scenario is increased and converted back to the first test scenario, and then the fifth erasure time series of the flash memory particles is obtained. This means that the order of obtaining the fifth erasure time series and the sixth erasure time series of the flash memory particles can be flexibly adjusted. By this method of flexibly changing the order, the time consumed by the temperature change of the scenario in the test process can be effectively saved.

[0053] In a feasible embodiment, after obtaining the test data of the flash memory particles in multiple first test scenarios and second test scenarios, calculations can be further performed based on these test data, and multiple blocks in the flash memory particles can be classified according to the calculation results. As Figure 3 shown, the execution process of step 120 may include but is not limited to steps 310 to 340.

[0054] Step 310: Calculate according to the first erasure time series and the second erasure time series to obtain the first time average value;

[0055] Step 320: Calculate according to the first time average value, the third erasure time series and the fourth erasure time series to obtain the second time average value;

[0056] Step 330: Calculate according to the first time average value, the fifth erasure time series and the sixth erasure time series to obtain the time evaluation series of the two test scenarios;

[0057] Step 340: Classify multiple blocks in the flash memory particles according to the time evaluation sequences of respective test scenarios and the second time mean value, and label the multiple blocks as first type blocks and second type blocks according to the classification results.

[0058] In a feasible embodiment, as Figure 4 shown, the execution process of step 310 may include but is not limited to steps 410 to 450.

[0059] Step 410: Obtain the first erasure time of each block in all the same erasure rounds according to the first erasure time sequence;

[0060] Step 420: Calculate the mean value of the first erasure times in multiple rounds by calculating the mean value according to the first erasure times of each block in all the same erasure rounds;

[0061] Step 430: Obtain the second erasure time of each block in all the same erasure rounds according to the second erasure time sequence;

[0062] Step 440: Calculate the mean value of the second erasure times in multiple rounds by calculating according to the second erasure times of each block in all the same erasure rounds;

[0063] Step 450: Calculate the mean value of the mean value of the first erasure times in multiple rounds and the mean value of the second erasure times in multiple rounds to obtain the first time mean value.

[0064] For example, the first erasure time sequence includes multiple erasure records of each block in the first test scenario. Assume that the flash memory particles include N blocks, and the erasure operation is repeated K rounds, and the erasure record of each round can be represented by a corresponding sequence: the erasure record of the first round is , the erasure record of the second round is , and so on, the erasure record of the Kth round . Among them, represents the erasure time (i.e., the first erasure time) of the ith block in the first round, and the explanations for other rounds are the same and will not be elaborated here. After completing the full disk erasure of K rounds, each block has K corresponding erasure time data.

[0065] To obtain the mean value of the first erasure time sequence, the specific calculation steps are as follows: Calculate the average value of the erasure records of each round respectively. For example, the average value of the erasure record of the first round is , the average value of the erasure record of the second round is , and so on, the average value of the erasure record of the Kth round is . Further, calculate the mean value of the average values of the erasure records of each round, and the mean value of the first erasure time sequence can be obtained For the second erasure time series, the same calculation process as that of the first erasure time series is adopted. First, the average value of each round of erasure records is calculated, and then the average value of these average values is calculated to obtain the average value of the second erasure time series. Finally, the average value of the first erasure time series , and the average value of the second erasure time series are averaged, and the obtained result is the first time average value .

[0066] In a feasible embodiment, after calculating the first time average value, the second time average value can be calculated based on the first time average value. As Figure 5 shown, the execution process of step 320 may include but is not limited to steps 510 to 550.

[0067] Step 510: Obtain the third erasure time of each block according to the third erasure time series;

[0068] Step 520: Calculate according to the third erasure time of each block and the first time average value to obtain the first time variance;

[0069] Step 530: Obtain the fourth erasure time of each block according to the fourth erasure time series;

[0070] Step 540: Calculate according to the fourth erasure time of each block and the first time average value to obtain the second time variance;

[0071] Step 550: Calculate according to the first time variance and the second time variance to obtain the second time average value.

[0072] In a feasible embodiment, the third erasure time series includes the erasure records of each block of the flash memory particles in the first test scenario. Assume that the erasure record of this round is , where ( ) represents the erasure time of the i-th block (i.e., the third erasure time). Calculate the variance of the erasure time corresponding to each block and the first time average value to obtain the first time variance . The fourth erasure time series includes the erasure records of each block of the flash memory particles in the second test scenario. Assume that the erasure record of this round is , where ( ) represents the erasure time of the i-th block (i.e., the fourth erasure time). Calculate the variance of the erasure time corresponding to each block and the first time average value to obtain the second time variance . Finally, for the first time variance and the second time variance By calculating the mean value, the second-time mean value can be obtained. .

[0073] In a feasible embodiment, in step 330, the fifth erasure time series includes the erasure records of each block of the flash memory particles in the first test scenario. When calculating the time evaluation sequence based on the first-time mean value, the second-time mean value, and the fifth erasure time series, the specific operations are as follows: For each block in the fifth erasure time series, calculate the variance between its corresponding erasure time and the first-time mean value respectively. Assume that the fifth erasure time series is , where ( ) represents the erasure time of the i-th block. The first-time mean value is , then the variance corresponding to the i-th block . Combining the variances corresponding to these blocks can obtain the time evaluation sequence in the first test scenario. For the sixth erasure time series, adopt the same calculation process as the fifth erasure time series. For each block in the sixth erasure time series, calculate the variance between its corresponding erasure time and the first-time mean value respectively, so as to obtain the time evaluation sequence in the second test scenario.

[0074] In a feasible embodiment, after calculating the time evaluation sequences of the first test scenario and the second test scenario, the multiple blocks in the flash memory particles can be further classified according to these two time evaluation sequences and the second-time mean value, and these blocks can be marked as the first type of blocks and the second type of blocks according to the classification results. The specific operations are as follows: First, extract the erasure time evaluation values of each block from the time evaluation sequence of the first test scenario, and these values are the variances corresponding to each block. Next, perform a judgment operation on each block: When the absolute value of the difference between the erasure time evaluation value of the current block and the second-time mean value is greater than a preset threshold, this block is marked as the first type of block; if this condition is not met, that is, the absolute value of the difference is less than or equal to the preset threshold, it is marked as the second type of block. Among them, the first type of blocks is defined as blocks with poor performance (bad blocks), while the second type of blocks is defined as blocks with good performance (good blocks). Similarly, extract the erasure time evaluation values of each block from the time evaluation sequence of the second test scenario. Subsequently, also perform a judgment on each block: If the absolute value of the difference between the erasure time evaluation value of the current block and the second-time mean value is greater than the preset threshold, then this block is marked as the first type of block (bad block); if the absolute value of this difference is less than or equal to the preset threshold, the block is marked as the second type of block (good block).

[0075] It should be noted that no specific limitations are set for the specific value of the preset threshold in this embodiment, so as to flexibly adjust the threshold according to different flash memory particle characteristics and actual application scenarios, thereby optimizing the grading effect.

[0076] In a feasible embodiment, according to the number of the first type of blocks and the second type of blocks in multiple blocks of the flash memory particles counted in the previous steps, the quality of the flash memory particles can be determined according to the following rules: If all blocks are of the second type, it indicates that the overall performance of the flash memory particles is good, and it is determined as a good product. If both the first type of blocks and the second type of blocks exist among multiple blocks, and the proportion of the first type of blocks in the total number of blocks is less than the preset threshold, it means that although there are some blocks with poor performance in the flash memory particles, the overall can still meet certain usage requirements, and it is determined as a sub-good product. If both the first type of blocks and the second type of blocks exist among multiple blocks, and the proportion of the first type of blocks in the total number of blocks is greater than the preset threshold, it means that there are many blocks with poor performance in the flash memory particles and it is difficult to meet the normal usage requirements, and it is determined as a defective product.

[0077] The execution process of this method will be described in detail through a specific example below. This operation requires a high and low temperature environment, and the specific operation environment is determined according to the temperature range index of the flash memory product. The following takes the common commercial temperature range of -25°C to 85°C and 1000 blocks as an example for illustration:

[0078] High-temperature data acquisition stage

[0079] 1. First-round high-temperature erase record

[0080] Raise the ambient temperature to 85°C. After the temperature stabilizes, perform an erase operation on the flash memory. When erasing one block each time, record the erase response time of this block and find an area in this block to store this value. Perform such operations until the erasure and recording of 1000 blocks are completed. At this time, each of the 1000 blocks has recorded its own erase response time. For the convenience of statistics, the rb times of this round of operation are uniformly marked as (A0, A1, A2, …, A999). Thus, the first-round erase response time recording operation under high temperature is completed.

[0081] 2. Multiple rounds of high-temperature erase operations

[0082] To ensure the reliability of the results and avoid the influence of accidental factors, multiple rounds of tests are required. Since subsequent erase operations will overwrite the previous data, before performing the second-round operation, the data obtained in the first round needs to be transferred to a location that will not be erased. Repeat the operation in step 1, and the erase response time obtained in the second round is marked as (B0, B1, B2, …, B999). Repeat this cycle for a total of 18 times.

[0083] 3. Naming Specification for High-Temperature Data

[0084] After completing 18 full disk erasures in a high-temperature environment, each block has 18 erase response time data. These data can be further named according to specifications. Thus, the high-temperature erase data acquisition experiment is completed.

[0085] Data Calculation Phase

[0086] 4. Calculating the Average Value for Each Round of Data

[0087] Calculate the erase response time data for 18 rounds (cycles) obtained in the previous steps. First, take the average value of the response time for each round. For example:

[0088] The 1st cycle: K1 ,

[0089] The 2nd cycle: K2 ,

[0090] The 3rd cycle: K3 , ...

[0091] The 18th cycle: K18 .

[0092] 5. Calculating the Average of the Averages for Multiple Rounds

[0093] After obtaining the average values for 18 cycles respectively, take the average of these 18 average values: K19 = (K1 + K2 + K3 + … + K18) / 18. Save the value of K19 in the flash memory, and then proceed to the next step.

[0094] Low-Temperature Data Acquisition and Calculation Phase

[0095] 6. Low-Temperature Data Acquisition

[0096] Lower the test temperature to low temperature -25°C, and repeat the operations in steps 1 and 2 at -25°C. After completing the tests for 18 cycles, obtain the low-temperature erase response time data for 18 cycles.

[0097] 7. Low-Temperature Data Calculation

[0098] According to the methods in steps 4 and 5, calculate the average value of the erase response time for 18 cycles at low temperature, denoted as K37.

[0099] 8. Calculating the Average of the High-Temperature and Low-Temperature Averages

[0100] Take the average of the two average values K19 and K37 obtained at high temperature and low temperature to get the final average value X0.

[0101] Square difference calculation stage

[0102] 9. High-temperature square difference calculation

[0103] Raise the temperature to 85°C again for testing, and re-perform the erasure operation on the flash memory. Calculate the square difference between the response time obtained from each erasure operation and the mean value X0. Finally, the square difference at high temperature is obtained as φ1. For example, the erasure response times of this round are marked as (T0, T1, T2, …, T999), and the square difference between each response time and the mean value X0 is calculated to obtain:

[0104] φ1 。

[0105] 10. Low-temperature square difference calculation

[0106] Lower the temperature to -25°C and perform the same operations as in step 9. Calculate the square difference between the rb time obtained from each erasure operation and the mean value X0. Finally, the square difference at low temperature is obtained as φ2. For example, the erasure response times of this round are marked as (P0, P1, P2, …, P999), and the square difference between each response time and the mean value X0 is calculated to obtain:

[0107] Φ2 。

[0108] 11. Square difference mean value calculation

[0109] Calculate the average value of the two square differences φ1 and φ2 to obtain φ_avg.

[0110] 12. Low-temperature block screening

[0111] The current ambient temperature is still set at -25°C. To save the time for temperature change, continue the operation at this temperature. Perform the erasure operation on each block, obtain the erasure time, and calculate the variance σ_i using this erasure time and the average value X0. Compare the variance σ_i with φ_avg. If |σ_i - φ_avg| is greater than a preset threshold M, then mark this block as a weak block. Using this method, complete the variance calculation and comparison of 1000 blocks, and screen and mark the weak blocks at low temperature.

[0112] 13. High-temperature weak block screening

[0113] Raise the temperature to 85°C and repeat the operation in step 12. Erase one block each time to obtain the erasure time, calculate the variance σ_j between it and the average value X0, and compare the variance σ_j with φ_avg. If |σ_j - φ_avg| is greater than the threshold M, mark this block as a weak block. By this method, complete the variance calculation and comparison for 1000 blocks, and screen and mark the weak blocks at high temperatures.

[0114] Grading stage

[0115] 14. Result writing and grading basis

[0116] After completing all the above steps, all the screening operations are completed. Write all the test results, including the original factory bad block marks, newly added weak block marks, etc., into the flash memory. In the grading operation process of the flash memory, grading is carried out according to the test results written into the flash memory.

[0117] 15. Grading example

[0118] Good product: Read the test results of this flash memory. If all blocks are marked as normal blocks (good blocks), then this flash memory particle can be graded as a good product.

[0119] Sub-good product: If in the high and low temperature test results, there are Y0 blocks marked as bad blocks, and (Y0 / 1000)×100% = F0%, where F0 is greater than 0 and less than the preset threshold P, then this flash memory particle can be graded as a sub-good product.

[0120] Defective product: If in the high and low temperature test results, there are Y1 (Y1 > Y0) blocks marked as bad blocks, and (Y1 / 1000)×100% = F1%, and F1 is greater than the threshold P, then this flash memory particle can be graded as a defective product.

[0121] In this example, multiple rounds of full disk erasure and related operations are performed on the flash memory particle. This method can effectively avoid the result deviation caused by factors such as contingency during the experiment, and significantly improve the stability and reliability of the flash memory particle grading results. In addition, in the operation process of this example, no limiting conditions are set for the specific value of the preset threshold P, so as to flexibly adjust this threshold according to different flash memory particle characteristics and actual application scenarios, thereby optimizing the grading effect.

[0122] The embodiment of the present application also discloses an electronic device, where the electronic device includes a processor, a memory, and a computer program stored on the memory and executable by the processor. When the computer program is executed by the processor, it implements the flash memory particle grading method based on erasure time as described above.

[0123] The embodiments of the present application also disclose a computer-readable storage medium, which stores a program executable by a processor. The program executable by the processor is used to execute the flash memory particle grading method based on the erasure time as described above when executed by the processor.

[0124] The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A flash memory particle classification method based on erase time, characterized in that: The method comprises: Acquire test data of the flash memory particles under a plurality of first test scenarios and a second test scenario, wherein the temperature of the first test scenario is higher than the temperature of the second test scenario; Classifying a plurality of blocks in the flash memory particles according to the test data, and marking the plurality of blocks into first-category blocks and second-category blocks according to the classification results, wherein the performance level of the first-category blocks is lower than the performance level of the second-category blocks; Determining the quality of the flash memory particles according to the number of the first-type blocks and the second-type blocks in the plurality of blocks; The step of obtaining test data of the flash memory particles in a plurality of first test scenarios and second test scenarios includes: In the first test scenario, repeatedly obtaining a first erasing time sequence of the flash memory particle multiple times; In the case where the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and repeatedly acquiring a second erasure time sequence of the flash memory particle; When the test scenario is the second test scenario, converting the second test scenario to the first test scenario, and acquiring a third erasure time sequence of the flash memory particles; When the test scenario is the first test scenario, converting the first test scenario to the second test scenario, and acquiring a fourth erasure time sequence of the flash memory particles; When the test scenario is the second test scenario, convert the second test scenario to the first test scenario, and obtain a fifth erase time sequence of the flash memory particles; When the test scenario is the first test scenario, converting the second test scenario to the second test scenario, and acquiring a sixth erasure time sequence of the flash memory particles; Obtaining test data according to the first erasing time sequence, the second erasing time sequence, the third erasing time sequence, the fourth erasing time sequence, the fifth erasing time sequence, and the sixth erasing time sequence; The step of grading the plurality of blocks in the flash memory particles according to the test data, and marking the plurality of blocks into first-category blocks and second-category blocks according to the grading results, comprises: Calculating according to the first erasure time series and the second erasure time series to obtain a first time average; Calculate a second time average value according to the first time average value, the third erasure time series, and the fourth erasure time series; Calculate and obtain time evaluation sequences of two test scenarios according to the first time mean, the fifth erasure time sequence, and the sixth erasure time sequence; According to each of the time evaluation sequences and the second time average, a plurality of blocks in the flash memory particle are classified, and according to the classification result, the plurality of blocks are marked as first-category blocks and second-category blocks.

2. The flash memory particle classification method according to claim 1, characterized in that: The calculating according to the first erasure time series and the second erasure time series to obtain a first time average value includes: According to the first erasing time sequence, obtaining the first erasing time of each of the blocks in all the same erasing rounds; Calculate the first erasure time of each block in all the same erasure rounds to obtain an average value of the first erasure time in multiple rounds; According to the second erasing time sequence, obtaining the second erasing time of each of the blocks in all the same erasing rounds; Calculate the second erasure time of each block in all the same erasure rounds to obtain an average value of the second erasure time in multiple rounds; The first erasure time averages in the multiple rounds and the second erasure time averages in the multiple rounds are averaged to obtain a first time average.

3. The flash memory particle classification method according to claim 1, characterized in that: The calculating a second time mean value according to the first time mean value, the third erasure time sequence and the fourth erasure time sequence comprises: Obtaining a third erasing time of each of the blocks according to the third erasing time sequence; Calculate according to the third erasure time of each of the blocks and the first time mean to obtain a first time variance; According to the fourth erasing time sequence, obtaining a fourth erasing time of each of the blocks; Calculate according to the fourth erasure time of each of the blocks and the first time mean to obtain a second time variance; A second time mean is obtained by performing calculation according to the first time variance and the second time variance.

4. The flash memory particle classification method according to claim 1, characterized in that: The step of grading the plurality of blocks in the flash memory particles according to each of the time evaluation sequences and the second time mean, and marking the plurality of blocks into first-category blocks and second-category blocks according to the grading results, comprises: Obtaining, according to each of the time evaluation sequences, an erase time evaluation value corresponding to each of the blocks in the two test scenarios; Compare the erase time evaluation values ​​corresponding to each of the blocks in the two test scenarios with the second time average respectively, and classify the multiple blocks in the flash memory particles according to the comparison results; The plurality of blocks are marked as first-category blocks and second-category blocks according to the classification result.

5. The flash memory particle classification method according to claim 4, characterized in that: The step of marking the plurality of blocks into first-category blocks and second-category blocks according to the classification result comprises: If the absolute value of the difference between the erase time evaluation value of the block and the second time mean value is greater than a preset threshold, marking the block as a first type of block; If the absolute value of the difference between the erase time evaluation value of the block and the second time average is less than or equal to a preset threshold, the block is marked as a second type of block.

6. The flash memory particle classification method according to claim 1, characterized in that: The determining the quality of the flash memory particles according to the number of the first-type blocks and the second-type blocks in the plurality of blocks includes: If the plurality of blocks are all the second type of blocks, the flash memory particle is determined to be a good product; If the plurality of blocks include the first-type blocks and the second-type blocks, and the proportion of the first-type blocks in the plurality of blocks is less than a preset threshold, the flash memory particle is determined to be a substandard product; If the plurality of blocks include the first type of blocks and the second type of blocks, and the proportion of the first type of blocks in the plurality of blocks is greater than the preset threshold, the flash memory particle is determined to be a defective product.

7. An electronic device, wherein: The electronic device includes a processor, a memory, and a computer program stored in the memory and executable by the processor, wherein when the computer program is executed by the processor, the flash memory particle grading method based on erase time as described in any one of claims 1 to 6 is implemented.

8. A computer-readable storage medium storing a program executable by a processor, characterized in that: The processor-executable program is used to execute the flash memory particle classification method based on erase time as claimed in any one of claims 1 to 6 when executed by the processor.

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