Electrothermal performance detection system based on storage chip packaging

Abstract

The invention belongs to the field of chip electric heating performance detection, relates to a data analysis technology, and aims to solve the problem that the actual operation environment of a chip cannot be simulated in the prior art, in particular to an electric heating performance detection system based on storage chip packaging. Comprising a detection distribution module, a static test module, a dynamic test module, a test analysis module and an operation monitoring module. The detection distribution module is used for carrying out detection distribution processing on the packaged storage chips; two groups of storage chips are randomly selected from a batch of packaged storage chips and are respectively marked as static test objects and dynamic test objects, and the static test objects and the dynamic test objects are the same in number; the static test data and the dynamic test data of the packaged storage chip can be analyzed, the overall electric heating performance of the storage chip is evaluated, feedback is conducted in time when the overall electric heating performance is abnormal, and the accuracy of an electric heating performance detection result is improved.

Description

Technical Field

[0001] The present invention belongs to the field of chip electrothermal performance detection, relates to data analysis technology, and specifically is an electrothermal performance detection system based on memory chip packaging. Background Art

[0002] The high-temperature working performance of memory chips is closely related to their production process, materials and quality. High-quality production process and high-quality materials can improve the high-temperature working ability of memory chips and ensure their stability and reliability in high-temperature environments. In practical applications, thermal management is crucial to ensure the reliability and functionality of memory chips.

[0003] The invention patent with announcement number CN115629302A discloses a chip computing performance detection method, storage medium and system. The chip computing performance detection method can support the detection of multiple chips and multiple chips at the same time, and support the detection of multiple tasks at the same time, thereby improving the detection efficiency; however, the chip computing performance detection method cannot simulate the actual operating environment of the chip, and the test results in a static environment cannot reflect the actual operating performance of the chip. At the same time, the chip computing performance detection method cannot perform optimization link analysis when the performance is abnormal, resulting in low efficiency in chip performance optimization.

[0004] In view of the above technical problems, this application proposes a solution. Summary of the invention

[0005] The purpose of the present invention is to provide an electrothermal performance detection system based on memory chip packaging, which is used to solve the problem that the existing technology cannot simulate the actual operating environment of the chip;

[0006] The technical problem to be solved by the present invention is: how to provide an electrothermal performance detection system based on memory chip packaging that can simulate the actual operating environment of the chip.

[0007] The purpose of the present invention can be achieved through the following technical solutions:

[0008] An electric and thermal performance detection system based on memory chip packaging, including a detection allocation module, a static test module, a dynamic test module, a test analysis module and an operation monitoring module;

[0009] The detection allocation module is used to perform detection allocation processing on the packaged memory chips: randomly select two groups of memory chips from a batch of packaged memory chips and mark them as static test objects and dynamic test objects respectively, and the number of static test objects and dynamic test objects is the same;

[0010] The static test module is used to perform static detection and analysis on the static test object: generate a standard test environment for the static test object, and each environmental parameter of the standard test environment is the middle value of the corresponding environmental value range; run the static test object in the standard test environment for K2 minutes to obtain a static test process, and obtain a static qualified coefficient through the static test process; send the static qualified coefficient to the test analysis module;

[0011] The dynamic test module is used to perform dynamic detection and analysis on the dynamic test object: generate a dynamic test environment for each dynamic test object, and each environmental parameter of the dynamic test environment is a value randomly selected from the corresponding environmental value range, and the dynamic test object is run in the corresponding dynamic test environment for K2 minutes to obtain a dynamic test process, and a dynamic qualified coefficient is obtained through the dynamic test process; the dynamic qualified coefficient is sent to the test analysis module;

[0012] The test analysis module is used to analyze static test data and dynamic test data of the packaged memory chip;

[0013] The operation monitoring module is used to perform operation monitoring and analysis on the packaging equipment of the memory chip.

[0014] Furthermore, the process of obtaining the static qualification coefficient includes: obtaining the response data XY, power consumption data GH and thermal resistance data RZ of the static test object during the static test process and performing numerical calculations to obtain the static coefficient JT of the static test object, marking the static test object as a static qualified object or a static unqualified object through the static coefficient JT; marking the ratio of the number of static qualified objects to the number of static test objects as the static qualification coefficient.

[0015] Furthermore, the response data XY is the maximum response time of the static test object during the static test process, the power consumption data GH is the energy consumption of the static test object in the static test process, and the thermal resistance data RZ is the maximum thermal resistance of the static test object during the static test process.

[0016] Furthermore, the specific process of marking a static test object as a static qualified object or a static unqualified object includes: comparing the static coefficient JT of the static test object with a preset static threshold JTmax: if the static coefficient JT is less than the static threshold JTmax, then it is determined that the static test performance of the static test object meets the requirements, and the corresponding static test object is marked as a static qualified object; if the static coefficient JT is greater than or equal to the static threshold JTmax, then it is determined that the static test performance of the static test object does not meet the requirements, and the corresponding static test object is marked as a static unqualified object.

[0017] Furthermore, the process of acquiring the dynamic qualified coefficient includes: acquiring the static coefficient JT of the dynamic test object during the dynamic test process, and performing variance calculation on the static coefficient JT of all dynamic test objects to obtain the dynamic qualified coefficient.

[0018] Furthermore, the specific process of the test analysis module analyzing the static test data and dynamic test data of the packaged storage chip includes: comparing the static qualification coefficient with the preset static qualification threshold: if the static qualification coefficient is less than the static qualification threshold, it is determined that the overall static detection result does not meet the requirements, and a static abnormal signal is generated and sent to the operation monitoring module; if the static qualification coefficient is greater than or equal to the static qualification threshold, it is determined that the overall static detection result meets the requirements, and a dynamic evaluation and analysis is performed.

[0019] Furthermore, the specific process of dynamic evaluation and analysis includes: comparing the dynamic qualification coefficient with a preset dynamic qualification threshold value: if the dynamic qualification coefficient is less than the dynamic qualification threshold value, it is determined that the dynamic detection result of the storage chip meets the requirements, and an electrothermal performance qualification signal is generated and the electrothermal performance qualification signal is sent to the mobile phone terminal of the administrator; if the dynamic qualification coefficient is greater than or equal to the dynamic qualification threshold value, it is determined that the dynamic detection result of the storage chip does not meet the requirements, and a dynamic abnormality signal is generated and the dynamic abnormality signal is sent to the operation monitoring module.

[0020] Furthermore, the specific process of the operation monitoring module performing operation monitoring and analysis on the packaging equipment of the memory chip includes: when receiving a static abnormal signal or a dynamic abnormal signal, retrieving the equipment operation parameters of the batch of memory chips in the packaging process, and performing numerical calculation to obtain the monitoring coefficient JC of the packaging equipment; comparing the monitoring coefficient JC of the packaging equipment with a preset monitoring threshold JCmax: if the monitoring coefficient JC is less than the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip meets the requirements, and a material optimization signal is generated and sent to the mobile phone terminal of the manager; if the monitoring coefficient JC is greater than or equal to the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip does not meet the requirements, and an equipment maintenance signal is generated and sent to the mobile phone terminal of the manager.

[0021] Furthermore, the equipment operating parameters include noise data ZS, vibration data ZD and heat data FR; the noise data ZS is the maximum decibel value of the noise generated by the packaging equipment during operation, the vibration data ZD is the maximum vibration amplitude of the base of the packaging equipment during operation, and the heat data FR is the maximum surface temperature of the heat sink of the packaging equipment during operation.

[0022] The present invention has the following beneficial effects:

[0023] 1. The static test module can be used to perform static detection and analysis on the static test object. Under the standard test environment, multiple operating parameters of the static test object can be obtained and comprehensively analyzed to obtain the static coefficient. The electrothermal performance of the static test object can be evaluated based on the static coefficient. The static qualified coefficient can be generated based on the evaluation results. The overall static test results can be fed back through the static qualified coefficient.

[0024] 2. The dynamic test module can be used to dynamically detect and analyze the dynamic test objects, generate a corresponding dynamic test environment for each dynamic test object, and combine the dynamic test environments of all dynamic test objects to form a complex simulation environment network, and then provide feedback on the adaptability of the electrical and thermal performance of the memory chip under different environments based on the generated dynamic qualification coefficient;

[0025] 3. The test analysis module can analyze the static test data and dynamic test data of the packaged memory chip, and evaluate the overall electrothermal performance of the memory chip by combining the static test data and the dynamic test data. When the overall electrothermal performance is abnormal, timely feedback is given to improve the accuracy of the electrothermal performance test results;

[0026] 4. The operation monitoring module can be used to monitor and analyze the operation of the packaging equipment of the memory chip. When the electrothermal performance does not meet the requirements, the monitoring coefficient is obtained by analyzing and calculating the operating parameters of the packaging equipment. The electrothermal performance optimization link of the memory chip is screened according to the monitoring coefficient to improve the electrothermal performance optimization efficiency of the memory chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 is a system block diagram of Embodiment 1 of the present invention;

[0029] Figure 2 This is a flow chart of the method of Embodiment 2 of the present invention. DETAILED DESCRIPTION

[0030] The technical solution of the present invention will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] Embodiment 1: Figure 1 As shown, the electrothermal performance detection system based on memory chip packaging includes a detection allocation module, a static test module, a dynamic test module, a test analysis module and an operation monitoring module. The detection allocation module, the static test module, the test analysis module and the operation monitoring module are communicatively connected in sequence, and the dynamic test module is communicatively connected with the detection allocation module and the test analysis module.

[0032] The detection allocation module is used to perform detection allocation processing on the packaged memory chips: two groups of memory chips are randomly selected from a batch of packaged memory chips and marked as static test objects and dynamic test objects respectively, and the number of static test objects and dynamic test objects is the same.

[0033] The static test module is used to perform static detection and analysis on the static test object: generate a standard test environment for the static test object, and each environmental parameter of the standard test environment is the middle value of the corresponding environmental value range. The static test object is run in the standard test environment for K2 minutes to obtain a static test process, and the response data XY, power consumption data GH and thermal resistance data RZ of the static test object in the static test process are obtained. The response data XY is the maximum response time of the static test object in the static test process, the power consumption data GH is the energy consumption of the static test object in the static test project, and the thermal resistance data RZ is the maximum thermal resistance of the static test object in the static test process; the static coefficient JT of the static test object is obtained by the formula JT=m1×XY+m2×GH+m3×RZ. The static coefficient JT is a value that reflects the degree of electrothermal performance of the static test object under the standard test environment. The smaller the value of the static coefficient JT, the better the electrothermal performance of the corresponding static test object under the standard test environment. Good; wherein m1, m2 and m3 are all proportional coefficients, and m1>m2>m3>1; compare the static coefficient JT of the static test object with the preset static threshold JTmax: if the static coefficient JT is less than the static threshold JTmax, it is determined that the static test performance of the static test object meets the requirements, and the corresponding static test object is marked as a static qualified object; if the static coefficient JT is greater than or equal to the static threshold JTmax, it is determined that the static test performance of the static test object does not meet the requirements, and the corresponding static test object is marked as a static unqualified object; the ratio of the number of static qualified objects to the number of static test objects is marked as a static qualified coefficient; the static qualified coefficient is sent to the test analysis module; multiple operating parameters of the static test object are obtained under a standard test environment and a comprehensive analysis is performed to obtain the static coefficient, the electrothermal performance of the static test object is evaluated according to the static coefficient, a static qualified coefficient is generated according to the evaluation result, and the overall static test result is fed back through the static qualified coefficient.

[0034] The dynamic test module is used to perform dynamic detection and analysis on the dynamic test object: a dynamic test environment is generated for each dynamic test object, and each environmental parameter of the dynamic test environment is a value randomly selected from the corresponding environmental value range. The dynamic test object is run in the corresponding dynamic test environment for K2 minutes to obtain the dynamic test process, and the static coefficient JT of the dynamic test object in the dynamic test process is obtained. The variance of the static coefficient JT of all dynamic test objects is calculated to obtain the dynamic qualified coefficient; the dynamic qualified coefficient is sent to the test analysis module; a corresponding dynamic test environment is generated for each dynamic test object, and the dynamic test environments of all dynamic test objects are combined to form a complex simulation environment network, and then feedback is provided on the adaptability of the electrothermal performance of the storage chip under different environments based on the generated dynamic qualified coefficient.

[0035] The test analysis module is used to analyze the static test data and dynamic test data of the packaged storage chip: compare the static qualification coefficient with the preset static qualification threshold: if the static qualification coefficient is less than the static qualification threshold, it is determined that the overall static detection result does not meet the requirements, generate a static abnormal signal and send the static abnormal signal to the operation monitoring module; if the static qualification coefficient is greater than or equal to the static qualification threshold, it is determined that the overall static detection result meets the requirements, and a dynamic evaluation analysis is performed: compare the dynamic qualification coefficient with the preset dynamic qualification threshold: if the dynamic qualification coefficient is less than the dynamic qualification threshold, it is determined that the dynamic detection result of the storage chip meets the requirements, generates an electrothermal performance qualification signal and sends the electrothermal performance qualification signal to the mobile phone terminal of the administrator; if the dynamic qualification coefficient is greater than or equal to the dynamic qualification threshold, it is determined that the dynamic detection result of the storage chip does not meet the requirements, generates a dynamic abnormal signal and sends the dynamic abnormal signal to the operation monitoring module; analyze the static test data and dynamic test data of the packaged storage chip, evaluate the overall electrothermal performance of the storage chip in combination with the static test data and the dynamic test data, and provide timely feedback when the overall electrothermal performance is abnormal, so as to improve the accuracy of the electrothermal performance detection results.

[0036] The operation monitoring module is used to perform operation monitoring and analysis on the packaging equipment of the memory chip: when receiving a static abnormal signal or a dynamic abnormal signal, the equipment operation parameters of the batch of memory chips in the packaging process are retrieved, and the equipment operation parameters include noise data ZS, vibration data ZD and heat data FR; the noise data ZS is the maximum decibel value of the noise generated by the packaging equipment during operation, the vibration data ZD is the maximum vibration amplitude of the base of the packaging equipment during operation, and the heat data FR is the maximum surface temperature of the heat sink of the packaging equipment during operation; the monitoring coefficient JC of the packaging equipment is obtained by the formula JC=c1×ZS+c2×ZD+c3×FR. The monitoring coefficient JC is a value that reflects the degree of good or bad operation status of the packaging equipment. The smaller the value of the monitoring coefficient JC, the better the operation status of the packaging equipment. Among them, c1, c2 and c3 are all proportional coefficients, and c1>c2>c3>1; the monitoring coefficient JC of the packaging equipment is compared with the preset monitoring threshold JCmax: if the monitoring coefficient JC is less than the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip meets the requirements, and a material optimization signal is generated and sent to the mobile phone terminal of the manager; if the monitoring coefficient JC is greater than or equal to the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip does not meet the requirements, and an equipment maintenance signal is generated and sent to the mobile phone terminal of the manager; when the electrothermal performance does not meet the requirements, the monitoring coefficient is obtained by analyzing and calculating the operating parameters of the packaging equipment, and the electrothermal performance optimization link of the memory chip is screened according to the monitoring coefficient to improve the electrothermal performance optimization efficiency of the memory chip.

[0037] Embodiment 2: Figure 2 As shown, the method for detecting the electric and thermal performance of the memory chip package includes the following steps:

[0038] Step 1: Performing a test allocation process on the packaged memory chips: Randomly selecting two groups of memory chips from a batch of packaged memory chips and marking them as static test objects and dynamic test objects respectively;

[0039] Step 2: Perform static detection and analysis on the static test object: generate a standard test environment for the static test object, run the static test object in the standard test environment for K2 minutes to obtain a static test process, and obtain the static pass coefficient of the static test object in the static test process;

[0040] Step 3: Perform dynamic detection and analysis on the dynamic test object: Generate a dynamic test environment for each dynamic test object, run the dynamic test object in the corresponding dynamic test environment for K2 minutes to obtain a dynamic test process, and obtain the dynamic qualified coefficient of the dynamic test object in the dynamic test process;

[0041] Step 3: Analyze the static test data and dynamic test data of the packaged memory chip: When both the static test results and the dynamic test results meet the requirements, generate an electric and thermal performance qualified signal and send the electric and thermal performance qualified signal to the mobile phone terminal of the administrator; otherwise, execute step 4;

[0042] Step 4: Conduct operation monitoring and analysis on the packaging equipment of the memory chip: retrieve the equipment operation parameters of the batch of memory chips during the packaging process, perform numerical calculations on the equipment operation parameters to obtain the monitoring coefficient JC, and use the monitoring coefficient JC to determine whether the packaging processing status of the memory chip meets the requirements.

[0043] The electrothermal performance detection system based on memory chip packaging, when working, randomly selects two groups of memory chips from a batch of packaged memory chips and marks them as static test objects and dynamic test objects respectively; generates a standard test environment for the static test objects, runs the static test objects under the standard test environment for K2 minutes to obtain a static test process, and obtains the static qualified coefficient of the static test objects in the static test process; generates a dynamic test environment for each dynamic test object, runs the dynamic test objects under the corresponding dynamic test environment for K2 minutes to obtain a dynamic test process, and obtains the dynamic qualified coefficient of the dynamic test objects in the dynamic test process; generates an electrothermal performance qualified signal when both the static test results and the dynamic test results meet the requirements and sends the electrothermal performance qualified signal to the mobile phone terminal of the manager, otherwise, retrieves the equipment operating parameters of the batch of memory chips in the packaging process, performs numerical calculations on the equipment operating parameters to obtain the monitoring coefficient JC, and judges whether the packaging processing status of the memory chips meets the requirements through the monitoring coefficient JC.

[0044] The above contents are merely examples and explanations of the structure of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the structure of the invention or exceed the scope defined by the claims, they should all fall within the protection scope of the present invention.

[0045] The above formulas are obtained by collecting a large amount of data for software simulation and selecting a formula close to the real value. The coefficients in the formula are set by technicians in this field according to the actual situation; for example: formula JT = m1×XY+m2×GH+m3×RZ; technicians in this field collect multiple groups of sample data and set corresponding static coefficients for each group of sample data; substitute the set static coefficients and the collected sample data into the formula, any three formulas constitute a three-variable linear equation group, screen the calculated coefficients and take the average, and obtain the values ​​of m1, m2 and m3 as 4.58, 4.02 and 2.84 respectively;

[0046] The size of the coefficient is to quantify each parameter to obtain a specific value for subsequent comparison. The size of the coefficient depends on the amount of sample data and the preliminary setting of the corresponding static coefficient for each set of sample data by technical personnel in this field; as long as it does not affect the proportional relationship between the parameter and the quantized value, such as the static coefficient is proportional to the value of the response data.

[0047] In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0048] The preferred embodiments of the present invention disclosed above are only used to help explain the present invention. The preferred embodiments do not describe all the details in detail, nor do they limit the invention to only specific implementation methods. Obviously, many modifications and changes can be made according to the content of this specification. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can understand and use the present invention well. The present invention is limited only by the claims and their full scope and equivalents.

Claims

1. An electrothermal performance detection system based on memory chip packaging, characterized in that: It includes detection allocation module, static test module, dynamic test module, test analysis module and operation monitoring module; The detection allocation module is used to perform detection allocation processing on the packaged memory chips: randomly select two groups of memory chips from a batch of packaged memory chips and mark them as static test objects and dynamic test objects respectively, and the number of static test objects and dynamic test objects is the same; The static test module is used to perform static detection and analysis on the static test object: generate a standard test environment for the static test object, and each environmental parameter of the standard test environment is the middle value of the corresponding environmental value range; run the static test object in the standard test environment for K2 minutes to obtain a static test process, and obtain a static qualified coefficient through the static test process; send the static qualified coefficient to the test analysis module; The dynamic test module is used to perform dynamic detection and analysis on the dynamic test object: a dynamic test environment is generated for each dynamic test object, and each environmental parameter of the dynamic test environment is a value randomly selected from the corresponding environmental value range. The dynamic test object is run for K2 minutes in the corresponding dynamic test environment to obtain a dynamic test process, and a dynamic qualified coefficient is obtained through the dynamic test process; Sending the dynamic qualification coefficient to the test analysis module; The test analysis module is used to analyze static test data and dynamic test data of the packaged memory chip; The operation monitoring module is used to perform operation monitoring and analysis on the packaging equipment of the memory chip.

2. The electrothermal performance detection system based on memory chip packaging according to claim 1 is characterized in that: The process of obtaining the static qualification coefficient includes: obtaining the response data XY, power consumption data GH and thermal resistance data RZ of the static test object during the static test process and performing numerical calculations to obtain the static coefficient JT of the static test object; marking the static test object as a static qualified object or a static unqualified object through the static coefficient JT; and marking the ratio of the number of static qualified objects to the number of static test objects as the static qualification coefficient.

3. The electrothermal performance detection system based on memory chip packaging according to claim 2 is characterized in that: The response data XY is the maximum response time of the static test object during the static test process, the power consumption data GH is the energy consumption of the static test object in the static test process, and the thermal resistance data RZ is the maximum thermal resistance of the static test object during the static test process.

4. The electrothermal performance detection system based on memory chip packaging according to claim 3 is characterized in that: The specific process of marking a static test object as a static qualified object or a static unqualified object includes: comparing the static coefficient JT of the static test object with the preset static threshold JTmax: if the static coefficient JT is less than the static threshold JTmax, it is determined that the static test performance of the static test object meets the requirements, and the corresponding static test object is marked as a static qualified object; if the static coefficient JT is greater than or equal to the static threshold JTmax, it is determined that the static test performance of the static test object does not meet the requirements, and the corresponding static test object is marked as a static unqualified object.

5. The electrothermal performance detection system based on memory chip packaging according to claim 4 is characterized in that: The process of obtaining the dynamic qualified coefficient includes: obtaining the static coefficient JT of the dynamic test object during the dynamic test process, and performing variance calculation on the static coefficient JT of all dynamic test objects to obtain the dynamic qualified coefficient.

6. The electrothermal performance detection system based on memory chip packaging according to claim 5 is characterized in that: The specific process of the test analysis module analyzing the static test data and dynamic test data of the packaged memory chip includes: comparing the static qualification coefficient with the preset static qualification threshold: if the static qualification coefficient is less than the static qualification threshold, it is determined that the overall static detection result does not meet the requirements, and a static abnormal signal is generated and sent to the operation monitoring module; if the static qualification coefficient is greater than or equal to the static qualification threshold, it is determined that the overall static detection result meets the requirements, and a dynamic evaluation and analysis is performed.

7. The electrothermal performance detection system based on memory chip packaging according to claim 6 is characterized in that: The specific process of dynamic evaluation and analysis includes: comparing the dynamic qualification coefficient with the preset dynamic qualification threshold value: if the dynamic qualification coefficient is less than the dynamic qualification threshold value, it is determined that the dynamic detection result of the storage chip meets the requirements, and an electrothermal performance qualification signal is generated and the electrothermal performance qualification signal is sent to the mobile phone terminal of the administrator; if the dynamic qualification coefficient is greater than or equal to the dynamic qualification threshold value, it is determined that the dynamic detection result of the storage chip does not meet the requirements, and a dynamic abnormality signal is generated and the dynamic abnormality signal is sent to the operation monitoring module.

8. The electrothermal performance detection system based on memory chip packaging according to claim 7 is characterized in that: The specific process of the operation monitoring module performing operation monitoring and analysis on the packaging equipment of the memory chip includes: when receiving a static abnormal signal or a dynamic abnormal signal, retrieving the equipment operation parameters of the batch of memory chips in the packaging process, and performing numerical calculation to obtain the monitoring coefficient JC of the packaging equipment; comparing the monitoring coefficient JC of the packaging equipment with the preset monitoring threshold JCmax: if the monitoring coefficient JC is less than the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip meets the requirements, and a material optimization signal is generated and sent to the mobile phone terminal of the manager; if the monitoring coefficient JC is greater than or equal to the monitoring threshold JCmax, it is determined that the packaging processing state of the memory chip does not meet the requirements, and an equipment maintenance signal is generated and sent to the mobile phone terminal of the manager.

9. The electrothermal performance detection system based on memory chip packaging according to claim 8, characterized in that: The equipment operating parameters include noise data ZS, vibration data ZD and heat data FR; the noise data ZS is the maximum decibel value of the noise generated by the packaging equipment during operation, the vibration data ZD is the maximum vibration amplitude of the base of the packaging equipment during operation, and the heat data FR is the maximum surface temperature of the heat sink of the packaging equipment during operation.

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