An abnormality processing method and device of an ion implanter and an electronic device

Abstract

The application provides an abnormality processing method and device of an ion implanter and an electronic device, and relates to the technical field of semiconductor preparation. In the application, when it is determined that an abnormal fluctuation exists in a voltage signal of the ion implanter for ion implantation on a target entity, a first control instruction for instructing the ion implanter to stop emitting a beam current is sent to the ion implanter. When it is determined that the target entity is moved from a current position to a first position, a second control instruction for instructing the ion implanter to reemit the beam current is sent to the ion implanter. If the voltage signal is restored to normal within a set time range, the target entity is ion supplemented in an abnormal ion implantation area based on ion implantation information corresponding to the abnormal fluctuation. In this way, the problem that the injection stability of the ion implanter is poor due to the abnormal fluctuation of the voltage is solved, and the injection stability of the ion implanter is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and particularly relates to an abnormality processing method and device of an ion implanter and an electronic device. BACKGROUND

[0002] In the field of semiconductor ion implantation, as the complexity of process manufacturing is higher and higher, higher requirements are put forward for the implantation stability of the ion implanter. Among them, the change in the size of the beam current caused by the instantaneous change (or also called glitch change) of the voltage will cause the ion implantation process to be discontinuous, and further cause the performance of part of the process products to fail. Therefore, the glitch change will have a certain influence on the implantation stability of the ion implanter.

[0003] Therefore, how to effectively solve the problem that the abnormal fluctuation of the voltage (such as glitch change) causes the implantation stability of the ion implanter to be poor is a problem to be solved at present. SUMMARY

[0004] Embodiments of the present application provide an abnormality processing method and device of an ion implanter and an electronic device, to solve the problem that the abnormal fluctuation of the voltage (such as glitch change) causes the implantation stability of the ion implanter to be poor, thereby improving the implantation stability of the ion implanter.

[0005] In a first aspect, an embodiment of the present application provides an abnormality processing method of an ion implanter, and the method comprises:

[0006] acquiring a voltage signal of the ion implanter for ion implantation on a target entity, and sending a first control instruction to the ion implanter when the voltage signal has an abnormal fluctuation; wherein the voltage signal is used to represent the size of the beam current emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam current;

[0007] when it is determined that the target entity is to be moved from a current position to a first position, sending a second control instruction to the ion implanter; wherein the first position is an endpoint position of the target entity in the ion implantation movement process, and the second control instruction is used to instruct the ion implanter to re-emit the beam current;

[0008] if the voltage signal recovers to normal within a set time range, performing ion supplement implantation on an abnormal ion implantation area of the target entity based on ion implantation information corresponding to the abnormal fluctuation.

[0009] In an optional embodiment, acquiring the voltage signal of the ion implanter for ion implantation on the target entity comprises:

[0010] An analog signal is acquired when an ion implanter performs ion implantation on a target entity, and the analog signal is analog-digital converted to obtain a corresponding digital signal;

[0011] The digital signal is filtered to obtain a voltage signal.

[0012] In an optional embodiment, the abnormal fluctuation is a voltage fluctuation amplitude in the voltage signal that is less than or equal to a set fluctuation amplitude threshold, and / or, an abnormal fluctuation time that is greater than or equal to a set time threshold.

[0013] In an optional embodiment, the abnormal ion implantation region of the target entity is ion supplemented based on ion implantation information corresponding to the abnormal fluctuation, including:

[0014] If it is determined based on the ion implantation information that the abnormal fluctuation occurs in a process in which the target entity moves along a first direction, the target entity is moved from a first position to a second position; wherein the first direction is from the first position to the second position, and the second position is another end position of the target entity in the ion implantation movement process.

[0015] The target entity is moved along a second direction until the supplement of the abnormal ion implantation region is completed; wherein the second direction is from the second position to the first position.

[0016] In an optional embodiment, before the target entity is moved from the first position to the second position, further including:

[0017] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to close the beam current;

[0018] After the target entity is moved from the first position to the second position, before the target entity is moved along the second direction until the supplement of the abnormal ion implantation region is completed, further including:

[0019] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to open the beam current.

[0020] In an optional embodiment, the abnormal ion implantation region of the target entity is ion supplemented based on ion implantation information corresponding to the abnormal fluctuation, including:

[0021] If it is determined based on the ion implantation information that the abnormal fluctuation occurs in a process in which the target entity moves along a second direction, the target entity is moved along a first direction until the supplement of the abnormal ion implantation region is completed.

[0022] The second direction is from the second position to the first position, the first direction is from the first position to the second position, and the second position is another end position of the target entity in the ion implantation movement process.

[0023] In an alternative embodiment, after sending the second control instruction to the ion implanter, the method further comprises:

[0024] If the voltage signal does not recover normally within the set time range, the target entity is removed, and prompt information is sent to the target object; the indication information is used to remind the target object to perform ion replenishment on the target entity.

[0025] In a second aspect, the embodiments of the present application also provide an abnormality processing device of an ion implanter, the device comprising:

[0026] A signal acquisition module is configured to acquire a voltage signal of the ion implanter for ion implantation on a target entity, and send a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations; wherein the voltage signal is used to represent the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam;

[0027] A position determination module is configured to send a second control instruction to the ion implanter when it is determined to move the target entity from a current position to a first position; wherein the first position is an endpoint position of the target entity in the ion implantation process, and the second control instruction is used to instruct the ion implanter to re-emit the beam;

[0028] An ion implantation module is configured to, if the voltage signal recovers normally within the set time range, perform ion replenishment on an abnormal ion implantation region of the target entity based on ion implantation information corresponding to the abnormal fluctuations.

[0029] In an alternative embodiment, when acquiring the voltage signal of the ion implanter for ion implantation on the target entity, the signal acquisition module is specifically configured to:

[0030] Acquire an analog signal when the ion implanter performs ion implantation on the target entity, and perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal;

[0031] Filter the digital signal to obtain the voltage signal.

[0032] In an alternative embodiment, when performing ion replenishment on the abnormal ion implantation region of the target entity based on ion implantation information corresponding to the abnormal fluctuations, the ion implantation module is specifically configured to:

[0033] If it is determined based on the ion implantation information that the abnormal fluctuations occur in the process of the target entity moving in a first direction, the target entity is moved from the first position to a second position; wherein the first direction is from the first position to the second position, and the second position is another endpoint position of the target entity in the ion implantation movement process;

[0034] The target entity is moved along a second direction until the abnormal ion implantation area is replenished; wherein the second direction is a direction from the second position to the first position.

[0035] In an optional embodiment, before moving the target entity from the first position to the second position, the ion implantation module is further configured to:

[0036] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam;

[0037] After moving the target entity from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is completed, the ion implantation module is further configured to:

[0038] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

[0039] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module is specifically configured to:

[0040] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is replenished;

[0041] The second direction is the direction from the second position to the first position, the first direction is the direction from the first position to the second position, and the second position is another endpoint position of the target entity during the ion implantation movement process.

[0042] In an optional embodiment, after sending the second control instruction to the ion implanter, the ion implantation module is further configured to:

[0043] If the voltage signal does not return to normal within the set time range, the target entity is removed and a prompt message is sent to the target object; the instruction message is used to remind the target object to refill the target entity with ions.

[0044] In a third aspect, an embodiment of the present application further provides an electronic device, including:

[0045] processor; and

[0046] Memory for storing programs,

[0047] The program includes instructions, and when the instructions are executed by the processor, the processor executes the abnormality handling method for the ion implanter as described in the first aspect.

[0048] In a fourth aspect, the embodiments of the present application further provide a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to execute the abnormality processing method of the ion implanter according to the first aspect.

[0049] In a fifth aspect, the present application provides a computer program product, which, when invoked by a computer, causes the computer to execute the steps of the abnormality processing method of the ion implanter according to the first aspect.

[0050] The present application has the following beneficial effects:

[0051] In the abnormality processing method of the ion implanter provided by the embodiments of the present application, when performing ion implantation on a target entity, the voltage signal of the ion implanter is detected in real time. Once it is found that the voltage signal has abnormal fluctuation, a first control instruction of stopping beam emission is sent to the ion implanter, and a second control instruction of re-emitting the beam is sent to the ion implanter when the target entity is moved from a current position to a first position. In this way, when it is determined that the voltage signal or the beam current recovers to normal within a set time range, the abnormal ion implantation region of the target entity can be ion implanted based on the ion implantation information corresponding to the abnormal fluctuation, so as to solve the problem that the injection stability of the ion implanter is poor due to abnormal fluctuation (for example, glitch change), and thus improve the injection stability of the ion implanter.

[0052] In addition, other features and advantages of the present application will be described in the following description, and some will become apparent from the description, or will be understood through implementation of the present application. The purpose and other advantages of the present application can be achieved and obtained through the structures specifically pointed out in the written description, claims, and drawings. BRIEF DESCRIPTION OF DRAWINGS

[0053] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced as follows. Obviously, the drawings described here are used to provide further understanding of the present application, and form a part of the present application. They do not constitute improper limitations to the present application. In the drawings:

[0054] Figure 1 A specific schematic diagram of glitch change provided by the embodiments of the present application;

[0055] Figure 2 A schematic diagram of ion implantation of a wafer provided by the embodiments of the present application;

[0056] Figure 3 An optional control system architecture schematic diagram provided by the embodiments of the present application;

[0057] Figure 4 An implementation flowchart of an abnormality processing method of an ion implanter provided by an embodiment of the present application is shown in FIG. 1.

[0058] Figure 5 A logic diagram of abnormal fluctuation detection on a voltage signal provided by an embodiment of the present application is shown in FIG. 2.

[0059] Figure 6 A scene diagram of target entity motion provided by an embodiment of the present application is shown in FIG. 3.

[0060] Figure 7 A logic diagram of ion top-up on a target entity provided by an embodiment of the present application is shown in FIG. 4.

[0061] Figure 8 An implementation flowchart of an abnormality processing method of ion implantation on a target entity provided by an embodiment of the present application is shown in FIG. 5.

[0062] Figure 9 A structure diagram of an abnormality processing device of an ion implanter provided by an embodiment of the present application is shown in FIG. 6.

[0063] Figure 10 A structure diagram of an electronic device provided by an embodiment of the present application is shown in FIG. 7. DETAILED DESCRIPTION

[0064] Embodiments of the present application will be described in more detail by referring to the attached drawings. Although certain embodiments of the present application are shown in the drawings, it is understood that the present application can be implemented in various forms and should not be interpreted as being limited to the embodiments set forth herein, but rather these embodiments are provided to make the present application more thorough and complete. It is understood that the drawings and embodiments of the present application are for exemplary purposes only and are not intended to limit the scope of protection of the present application.

[0065] It is understood that each step recited in the method embodiments of the present application can be executed in different order and / or in parallel. In addition, the method embodiments can include additional steps and / or omit the execution of the steps shown. The scope of the present application is not limited in this respect.

[0066] The term "include" and variations thereof, as used in this document, mean "to include, without limitation." The term "based on" means "based at least in part on." The term "one embodiment" means "at least one embodiment." The term "another embodiment" means "at least one additional embodiment." The term "some embodiments" means "at least some embodiments." Related terms shall be construed accordingly. It should be noted that "a" or "an" entity as used in this document refers to one or more than one entity. The terms "first," "second," and the like as used in this document do not have any specific meaning in terms of importance or priority, unless explicitly indicated otherwise.

[0067] It should be noted that the terms "one" and "a" or "multiple" in this application are illustrative and not limiting, and those skilled in the art should understand that "one" or "a" should be understood as "one or more" unless the context clearly indicates otherwise.

[0068] The names of the messages or information exchanged between the devices in the embodiments of the present application are only for illustrative purposes, and are not intended to limit the scope of the messages or information.

[0069] The following explains some of the terms used in the embodiments of the present application to facilitate understanding by those skilled in the art.

[0070] (1) Wafer: refers to a silicon wafer used to make a silicon semiconductor circuit, and its raw material is silicon. High-purity polysilicon is dissolved and incorporated into a silicon crystal seed, then slowly pulled out to form a cylindrical single crystal silicon. After the silicon crystal rod is ground, polished and sliced, a silicon wafer is formed, which is a wafer. Domestic wafer production lines mainly use 8-inch and 12-inch wafers.

[0071] (2) Programmable logic controller (PLC): is a digital operation electronic system specially designed for application in industrial environment. That is, a digital operation controller with a microprocessor for automation control, which can load control instructions into memory for storage and execution at any time.

[0072] (3) Ethernet for Control Automation Technology (EtherCAT): is a high-performance real-time Ethernet communication protocol that can achieve extremely low communication delay and high-bandwidth data transmission, thus meeting the needs of high-speed control and data acquisition.

[0073] Based on the above explanations of terms and related terms, the design idea of the embodiments of the present application is briefly introduced as follows:

[0074] In the field of semiconductor ion implantation, increasing process complexity places higher demands on the operational stability of ion implanters. Implant stability during ion implantation is dependent on many factors. Among them, momentary fluctuations or changes in voltage can cause variations in ion energy, thus affecting beam current (i.e., significant changes in beam current).

[0075] The instantaneous fluctuation or change of the voltage is also called glitch change (or spark phenomenon). This glitch change will cause the ion implantation process to be discontinuous, and then cause the performance of some process products to fail. For example, see Figure 1 As shown, it is a specific schematic diagram of a glitch change provided in an embodiment of the present application. Figure 1 A glitch occurred between 27.008ms and 47.264ms. This indicates a sudden drop in the high-voltage power supply during ion implantation, which lasted for over ten milliseconds. Alternatively, different types of glitches can be categorized based on the amplitude and duration of the voltage fluctuation.

[0076] Taking wafer ion implantation as an example, if no action is taken to address the glitch changes that occur, refer to Figure 2 As shown, implantation gaps appear on the wafer, seriously affecting the uniformity of ion implantation and the accuracy of the implanted dose. For glitch changes with large voltage fluctuations, long duration, or irreversible changes, the wafer after ion implantation cannot meet process requirements.

[0077] It should be understood that the implantation notch on the wafer is also an abnormal ion implantation area on the wafer, where the ion implantation quality is poor or the implanted ion dose is insufficient.

[0078] Therefore, in order to effectively solve the problem that the poor injection stability of the ion implanter caused by abnormal fluctuation of the voltage (such as glitch change), the embodiment of the present application proposes an abnormal processing method of an ion implanter, which can specifically include: acquiring a voltage signal of the ion implanter for ion implantation on a target entity, and sending a first control instruction to the ion implanter when the voltage signal has abnormal fluctuation; wherein the voltage signal can be used to represent the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; when it is determined that the target entity is moved from the current position to a first position, a second control instruction is sent to the ion implanter; wherein the first position can be an endpoint position of the target entity in the ion implantation movement process, and the second control instruction can be used to instruct the ion implanter to re-emit the beam; if the voltage signal recovers normally within a set time range, the abnormal ion implantation region of the target entity is ion supplemented based on the ion implantation information corresponding to the abnormal fluctuation. In this way, by ion supplementing (i.e. back supplementing, making up or supplementing implanting) the abnormal ion implantation region, the injection stability of the ion implanter is improved.

[0079] In particular, the preferred embodiments of the present application are described below in conjunction with the accompanying drawings of the specification, it should be understood that the preferred embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application, and the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.

[0080] Referring to Figure 3 As shown in the figure, it is an optional control system architecture schematic diagram applicable to the embodiments of the present application, which can include: a host computer 301, a controller 302, a signal acquisition module 303 and a motion control module 304. The controller 302 and the host computer 301, the signal acquisition module 303 and the motion control module 304 can exchange information through a communication network. Wherein, the communication mode of the communication network can include: wireless communication mode and wired communication mode.

[0081] For example, the controller 302 can access the network through cellular mobile communication technology, and communicate with the host computer 301, the signal acquisition module 303 and the motion control module 304. Wherein, the cellular mobile communication technology, such as, includes the fifth generation mobile communication (5th generation mobile networks, 5G) technology or the next generation mobile communication technology.

[0082] Optionally, the controller 302 can access the network through a short-range wireless communication mode to communicate with the host computer 301, the signal acquisition module 303, and the motion control module 304. The short-range wireless communication mode may, for example, include a wireless fidelity (Wi-Fi) technology.

[0083] In an optional implementation, as shown in Figure 3 The signal acquisition module 303 and the motion control module 304 can be integrated in the controller 302 through a real-time industrial bus (such as EtherCAT). The communication medium can be an optical fiber to reduce the interference of ion implantation field devices. Moreover, the ion implantation process anomaly detection (i.e., the signal acquisition module 303) and the dose control (the motion control module 304) are integrated in one controller 302 for control, which can reduce the interaction time between different modules and ensure the timeliness of the response of the entire control system.

[0084] The number of communication devices or communication modules involved in the above system architecture is not limited in the embodiments of the present application. For example, the above application scenarios can include more host computers, or can have no host computer, or can further include other network devices. As Figure 3 As shown in the above, only the host computer 301, the controller 302, the signal acquisition module 303, and the motion control module 304 are described as examples, and the above communication devices or communication modules and their respective functions are briefly introduced as follows.

[0085] The host computer 301 refers to a computer that can directly issue control instructions, which can generally provide a user operation interaction interface and show feedback data to the user. For example, the host computer 301 can include, but is not limited to, a mobile phone, a tablet computer, a notebook computer, a palm computer, a mobile internet device (MID), a wearable device, a virtual reality (VR) device, an augmented reality (AR) device, a wireless terminal device in industrial control, a wireless terminal device in unmanned driving, a wireless terminal device in smart power grid, a wireless terminal device in transportation safety, a wireless terminal device in smart city, or a wireless terminal device in smart home, etc.

[0086] The host computer 301 can generally send control instructions to the slave computer, and the slave computer performs corresponding actions after receiving the control instructions, and feeds back the obtained results to the host computer. Conceptually, the controller and the service provider are the host computer 301, and the controlled and served are the slave computer, which can also be understood as the relationship between the master and the slave. It should be noted that the host computer 301 and the slave computer are relative, and the host computer 301 and the slave computer can be converted.

[0087] For example, in the embodiment of the present application, the controller 302 can be a slave computer of the host computer 301, that is, the host computer 301 can send scheduling information related to ion implantation of the ion implanter to the controller 302. The aforementioned scheduling information can include parameters such as beam size emitted by the ion implanter.

[0088] The controller 302 can receive the scheduling information sent by the host computer 301, so as to determine the first position and the second position (i.e. the two end positions of the target entity movement) of the target entity movement, the ion implantation speed and the ion implantation times (or ion Pass number) and other parameters according to the multiple parameters included in the scheduling information. In this way, after obtaining the aforementioned multiple parameters, the controller 302 can execute the subsequent abnormal processing method of the ion implanter.

[0089] Optionally, the controller 302 can be used to obtain a voltage signal of the ion implanter for ion implantation of the target entity, and send a first control instruction to the ion implanter when the voltage signal has an abnormal fluctuation. The voltage signal can be used to represent the size of the beam emitted by the ion implanter, and the first control instruction can be used to instruct the ion implanter to stop emitting the beam. Then, when it is determined to move the target entity from the current position to the first position, a second control instruction is sent to the ion implanter. The first position is one end position of the target entity in the ion implantation movement process, and the second control instruction can be used to instruct the ion implanter to re-emit the beam. Finally, if the voltage signal recovers to normal within a set time range, the abnormal ion implantation region of the target entity is ion supplemented based on the ion implantation information corresponding to the abnormal fluctuation.

[0090] The signal acquisition module 303 is mainly used for real-time acquisition of the voltage signal of the ion implanter for ion implantation of the target entity, and timely sends the acquired voltage signal to the controller 302. For example, the signal acquisition module 303 can realize real-time input / output (I / O) acquisition of the voltage signal of the ion implanter.

[0091] The motion control module 304 is used to receive the motion control instruction for the target entity determined by the controller 302 according to the voltage signal of the ion implanter, and control the target entity to move according to the aforementioned motion control instruction.

[0092] It should be noted that, while the beam size emitted by the ion implanter remains unchanged, the ion implantation process into the target entity is completed by controlling the movement of the target entity. For example, the ion implantation process into the target entity (e.g., a wafer) can be completed by the reciprocating motion of the air bearing in the motion control module 304. Furthermore, it should be understood that, in the embodiments of the present application, there is no limitation on the specific types of the aforementioned devices or modules.

[0093] The following describes the abnormality handling method of the ion implanter provided by the exemplary embodiment of the present application in combination with the above-mentioned system architecture and reference to the accompanying drawings. It should be noted that the above-mentioned system architecture is only shown to facilitate understanding of the spirit and principles of the present application, and the implementation of the present application is not limited in this respect.

[0094] See Figure 4 As shown, it is a schematic diagram of the implementation process of an abnormality handling method of an ion implanter provided in an embodiment of the present application. The execution subject is a controller as an example. The specific implementation process of the method is as follows:

[0095] S401: Acquire a voltage signal of an ion implanter for ion implantation into a target entity, and send a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations.

[0096] The target entity mentioned above can be any entity that needs ion implantation, for example, the target entity can be a semiconductor silicon chip (such as a wafer), etc. The voltage signal mentioned above can be used to characterize the size of the beam emitted by the ion implanter. Generally, the larger the voltage amplitude of the voltage signal, the larger the beam emitted by the ion implanter; conversely, the smaller the voltage amplitude of the voltage signal, the smaller the beam emitted by the ion implanter. In addition, the voltage signal of the ion implanter when performing ion implantation on the target entity is usually a stabilized voltage signal, such as Figure 1 As shown, the voltage signal when performing ion implantation on the target entity may be a voltage signal of 26000 V. The above-mentioned first control instruction may be used to instruct the ion implanter to stop emitting the beam.

[0097] In one optional implementation, when executing step S401, the controller may acquire an analog signal from the ion implanter when implanting ions into a target entity, perform analog-to-digital conversion on the analog signal to obtain a corresponding digital signal, and then filter the digital signal to obtain a voltage signal. Thus, by performing analog-to-digital conversion on the acquired analog signal to obtain a digital signal, and performing digital filtering on the obtained digital signal, interference is prevented from causing the controller to misjudge the obtained voltage signal, thereby improving the accuracy of subsequent determination of whether there are abnormal fluctuations in the voltage signal.

[0098] In order to timely find whether there is abnormal fluctuation in the voltage signal of the ion implanter for ion implantation on the target entity, so as to improve the abnormal processing efficiency of the ion implanter. The controller can acquire the voltage signal of the ion implanter for ion implantation on the target entity in real time. For example, the controller can acquire the voltage signal of the ion implanter in real time through the signal acquisition module during the ion implantation of the ion implanter on the target entity, so as to determine whether there is abnormal fluctuation in the voltage signal of the ion implanter for ion implantation on the target entity.

[0099] Further, after acquiring the voltage signal of the ion implanter for ion implantation on the target entity, the controller can determine whether there is abnormal fluctuation in the voltage signal according to the preset abnormal fluctuation determination condition. Since the ion implanter usually uses high-voltage power supply when implanting ions on the target entity, the above-mentioned abnormal fluctuation is the case of sudden drop of high-voltage. Therefore, in an optional implementation manner, the aforementioned preset abnormal fluctuation determination condition can be that the voltage fluctuation amplitude in the voltage signal is less than or equal to a set fluctuation amplitude threshold value, and / or the abnormal fluctuation time is greater than or equal to a set time threshold value. That is, if the voltage fluctuation amplitude in the voltage signal is less than or equal to the set fluctuation amplitude threshold value, and / or the abnormal fluctuation time is greater than or equal to the set time threshold value, it can be determined that there is abnormal fluctuation in the voltage signal, and then subsequent abnormal processing for the ion implanter (or abnormal fluctuation) needs to be performed.

[0100] For example, assuming that the normal voltage of the voltage signal is 25000V, the voltage fluctuation amplitude in the voltage signal is 15000V, and the set fluctuation amplitude threshold value is 20000V, it can be determined that the voltage fluctuation amplitude 15000V is less than the set fluctuation amplitude threshold value 20000V, that is, it can be determined that there is abnormal fluctuation in the voltage signal. For another example, assuming that the abnormal fluctuation time is 19.25ms, and the set time threshold value is 15ms, it can be determined that the abnormal fluctuation time 19.25ms is greater than the set time threshold value 15ms, that is, it can be determined that there is abnormal fluctuation in the voltage signal.

[0101] For another example, still assuming that the normal voltage of the voltage signal is 25000V, the voltage fluctuation amplitude in the voltage signal is 15000V, the set fluctuation amplitude threshold value is 20000V, the abnormal fluctuation time is 19.25ms, and the set time threshold value is 15ms. As can be seen, the voltage fluctuation amplitude 15000V is less than the set fluctuation amplitude threshold value 20000V, and the abnormal fluctuation time 19.25ms is greater than the set time threshold value 15ms, so it can be determined that there is abnormal fluctuation in the voltage signal.

[0102] Based on the above manner, the controller, the signal acquisition module and the motion control module work in coordination, and millisecond-level reaction can be made to the abnormal situation of the ion implantation, and then the rapid shutdown of the beam is completed.

[0103] It should be noted that in the embodiments of the present application, the method for determining whether the voltage signal has abnormal fluctuation is not specifically limited. For example, the voltage signal can also be determined by comparing the voltage mean value in the voltage fluctuation time with the set mean value threshold, so as to determine whether the voltage signal has abnormal fluctuation. That is, the monitoring condition can be flexibly configured according to the actual situation.

[0104] In addition, as shown in Figure 1 , the glitch of the power supply is a very short process, and when the program judges, it is generally considered that the detection variable is suddenly reduced by a certain degree within a certain time, and it is considered that the glitch occurs. The judgment condition can be specifically configured according to the specific situation, which is very flexible. In addition, the controller can also detect the fluctuation of all electrical signals of the device at the same time, reducing the possibility of false positives and false negatives. When the glitch is detected, the controller enters the abnormal processing flow.

[0105] Referring to Figure 5 , after the controller starts the abnormal fluctuation detection function of the voltage signal of the ion implanter, the analog signal of the ion implanter can be acquired in real time, and after the mode conversion of the analog signal, the digital signal obtained is filtered, so as to determine whether the abnormal fluctuation (that is, glitch) occurs according to the obtained voltage signal (that is, the digital signal after filtering). Once the voltage signal is found to have abnormal fluctuation, subsequent abnormal processing is performed. Otherwise, the abnormal fluctuation detection is stopped after the ion implantation of the target entity is completed.

[0106] In order to reduce the power consumption of the ion implanter and reduce the consumption of ions, the controller can send a first control instruction to the ion implanter to instruct the ion implanter to stop emitting the beam when it is determined that the voltage signal has abnormal fluctuation. Optionally, the first control instruction can also be referred to as the beam interruption instruction of the ion implanter, and of course, the first control instruction can also have other names, which are not specifically limited in the embodiments of the present application.

[0107] S402: When it is determined to move the target entity from the current position to the first position, a second control instruction is sent to the ion implanter.

[0108] The first position can be one end position of the target entity in the ion implantation movement process. For example, the plane where the target entity is located is perpendicular to the horizontal ground, and referring to Figure 6As shown, the first position can be the ion implantation low position of the target entity in the vertical direction, that is, the lowest end that the beam can reach on the plane where the target entity is located. Here, the top of the target entity is adjacent to the lowest end that the ions in the beam can reach on the plane where the target entity is located.

[0109] Among them, Figure 6 As shown in Figure 1, the emission range corresponding to a broadband beam can represent the size of the beam emitted by the ion implanter. Furthermore, since a typical beam may be divergent, such as a ribbon beam, the range of the beam when it reaches the target object is typically larger than the emission range corresponding to the broadband beam, indicating an overscan region.

[0110] The second control instruction can be used to instruct the ion implanter to re-emit the beam. Thus, upon receiving the second control instruction from the controller, the ion implanter can re-emit or turn on the beam, thereby determining whether the beam emitted by the ion implanter has recovered from an abnormal state to a normal state, that is, whether the voltage signal of the ion implanter performing ion implantation on the target object has recovered from abnormal fluctuations to a stable state.

[0111] Specifically, during step S402, after the controller determines that the ion implanter has received the first control instruction and has stopped beam emission based on the first control instruction, it can then, through the motion control module, move the target entity from its current position to the first position. Next, upon determining that the target entity has moved to the first position, the controller can send a second control instruction to the ion implanter, instructing the ion implanter to resume beam emission. Finally, the signal acquisition module collects the beam or voltage signal in real time to determine whether the voltage signal or beam has returned to normal.

[0112] S403: If the voltage signal returns to normal within a set time range, ion injection is performed on the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation.

[0113] The voltage signal returns to normal within the set time range, which means that the beam emitted by the ion implanter returns to normal within the set time range. In order to promptly respond to problems caused by abnormal fluctuations, the set time range is generally a short time range, for example, within 5 seconds. The specific value of the set time range is not limited in the embodiments of the present application.

[0114] The ion injection information corresponding to the abnormal fluctuation is the relevant information for the controller to perform ion injection on the target entity when the controller detects abnormal fluctuation of the voltage signal. For example, it may include but is not limited to: the location of the target entity when the voltage signal fluctuates abnormally (or the abnormal ion injection area of ​​the target entity), the ion injection direction (such as Figure 6As shown, the ion implantation direction can be: ion implantation low position→ion implantation high position, or ion implantation high position→ion implantation low position) and the number of ion implantations (i.e. ion Pass number) and other parameters.

[0115] Wherein, the number of ion implantations (i.e. ion Pass number) refers to the number of times of the target entity moving back and forth in the ion implantation region under the guidance or control of the motion control module. As shown Figure 6 As shown, in the process of 1 ion implantation, the target entity moves from the ion implantation low position to the ion implantation high position, and then moves from the ion implantation high position to the ion implantation low position.

[0116] Therefore, when performing step S403, if the voltage signal recovers to normal within the set time range or the beam current recovers to normal within the set time range, the controller can perform ion implantation on the abnormal ion implantation region of the target entity based on the ion implantation information corresponding to the abnormal fluctuation, thereby improving the uniformity of ion implantation of the target entity.

[0117] In an optional implementation, if it is determined based on the ion implantation information that the abnormal fluctuation occurs in the process of the target entity moving in the first direction, the target entity can be moved from the first position to the second position, and the target entity can be moved in the second direction until the implantation of the abnormal ion implantation region is completed. Wherein, the first direction is from the first position to the second position, the second position is another end position of the target entity in the ion implantation movement process, and the second direction is from the second position to the first position, that is, the first direction and the second direction are opposite.

[0118] As can be seen, the movement direction of the target entity when the ion implanter implants the abnormal ion implantation region of the target entity is opposite to the movement direction of the target entity when the voltage signal appears abnormal fluctuation, so that the ion implantation of the target entity can be better achieved. It should be understood that the implantation of the abnormal ion implantation region of the target entity is that when the target entity moves to the position where the abnormal fluctuation occurs, the beam emitted by the ion implanter implants the target entity.

[0119] As Figure 6As shown, the first position can be the target entity's ion injection low position in the vertical direction, and the second position can be the target entity's ion injection high position in the vertical direction. The first direction is ion injection low position → ion injection high position (i.e., upward), and the second direction is ion injection high position → ion injection low position (i.e., downward). If a glitch change (i.e., abnormal fluctuation) occurs during the target entity's movement along the first direction, the controller can first move the target entity from the ion injection low position to the ion injection high position through the air bearing in the motion control module, thereby moving the target entity along the second direction until the abnormal ion injection area of ​​the target entity is replenished.

[0120] Optionally, to reduce ion consumption and the power consumption of the ion implanter caused by continuous operation, the controller can send a third control instruction to the ion implanter to instruct the ion implanter to turn off the beam before moving the target entity from the first position to the second position. Therefore, after the controller determines that the target entity has been moved from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is refilled, it can also send a fourth control instruction to the ion implanter to instruct the ion implanter to turn on the beam. In this way, flexible control of turning the beam emitted by the ion implanter on and off can be achieved based on actual beam demand.

[0121] In an optional implementation, if it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity may be moved along the first direction until the abnormal ion implantation area is filled. Figure 6 As shown, if a glitch change (i.e., abnormal fluctuation) occurs during the movement of the target entity along the second direction, the controller can drive the target entity to move along the first direction through the air bearing in the motion control module until the abnormal ion injection area of ​​the target entity is completed.

[0122] Based on the two situations of abnormal fluctuations mentioned above, refer to Figure 6 As shown, when the controller determines that the voltage signal has an abnormal fluctuation, it can use the ion injection method set for the movement direction according to the movement direction of the target entity when the abnormal fluctuation occurs (i.e., the first direction or the second direction) to inject ions into the target entity. If the movement direction of the target entity when the voltage signal is abnormal is the first direction, the beam can be turned off first; then, after the target entity moves to the ion injection high position, the beam can be turned on and moved to the ion injection low position; finally, when the target entity moves to the beam off position corresponding to the first control instruction, the beam can be turned off again and moved to the ion injection low position, thereby completing the ion injection process.

[0123] If the moving direction of the target entity when the voltage signal is abnormal is the second direction, the beam current can be maintained (i.e. not to be turned off) after the ion implanter is instructed to re-emit the beam current according to the second control instruction; then, the target entity is moved along the first direction by the motion control module; finally, when the target entity moves to the beam-off position corresponding to the first control instruction, the beam current is turned off again and the ion implantation is moved to the low position, so as to complete the ion replenishment process.

[0124] It should be noted that the beam-off position corresponding to the first control instruction is the position of the target entity when the controller finds that the voltage signal has abnormal fluctuation. In addition, in the embodiment of the present application, the number of times of ion replenishment of the target entity is not infinite, and generally, the ion replenishment cannot be continued after two times of ion replenishment.

[0125] In an optional implementation, after the step S402 is performed, if the voltage signal does not recover to normal within a set time range, the target entity can be removed, and prompt information is sent to the target object. The aforementioned indication information can be used to remind the target object to perform ion replenishment on the target entity. In this way, when the voltage signal or the beam current does not recover in time, the ion replenishment can still be performed on the ion implantation abnormal target entity, so as to improve the efficiency of abnormal processing.

[0126] For example, if the beam current emitted by the ion implanter does not recover, a topoff process can be performed, the target entity is removed, and ion replenishment is performed on the target entity, that is, the remaining ion dose of the target entity is replenished by the Topoff.

[0127] Therefore, based on the abnormal processing method of the ion implanter described above, referring to FIG. 8, when the controller determines that the voltage signal has abnormal fluctuation, the abnormal processing of the ion implantation of the target entity can be implemented in the following way: Figure 7

[0128] S801: Start. That is, the abnormal processing flow is started.

[0129] S802: Instruct the ion implanter to turn off the beam current.

[0130] For example, when the step S802 is performed, the controller can send a first control instruction for instructing the ion implanter to stop emitting the beam current to the ion implanter. In this way, after the ion implanter receives the first control instruction, the beam current can be turned off.

[0131] S803: Record the ion implantation information when the voltage signal has abnormal fluctuation.

[0132] ​The ion implantation information can include, but is not limited to, the position of the target entity (or the abnormal ion implantation area of the target entity) when the voltage signal abnormally fluctuates, the ion implantation direction, the ion implantation times (i.e., the ion Pass number), and the like. In addition, there is no strict order between the execution order of S802 and S803. As shown in FIG. 8, S802 occurs before S803. Of course, S802 can also occur after S803, or S802 and S803 can occur at the same time. Figure 8

[0133] S804: moving the target entity from the current position to the first position.

[0134] S805: whether the beam current is restored to normal. If yes, go to S806; if no, go to S807.

[0135] Specifically, when performing step S805, the controller can send a second control instruction to the ion implanter to instruct the ion implanter to re-emit the beam current after determining that the target entity is moved from the current position to the first position. In this way, the ion implanter can open the beam current after receiving the second control instruction, so as to detect in real time whether the beam current emitted by the ion implanter is restored to normal, that is, whether the voltage signal of the ion implanter has been restored to normal from abnormal fluctuation.

[0136] S806: entering the ion implantation process.

[0137] That is, if the voltage signal is restored to normal within the set time range, the abnormal ion implantation area of the target entity is ion implanted based on the ion implantation information corresponding to the abnormal fluctuation.

[0138] S807: removing the target entity.

[0139] That is, if the voltage signal is not restored to normal within the set time range, the target entity can be removed, and prompt information for prompting the target object to ion implant the target entity is sent to the target object.

[0140] ​In summary, in the abnormality handling method of the ion implanter provided in the embodiment of the present application, the voltage signal of the ion implanter can be detected in real time when ions are implanted into the target entity. Once abnormal fluctuations in the voltage signal are detected, a first control instruction to stop emitting the beam is sent to the ion implanter, and when the target entity is moved from its current position to the first position, a second control instruction to re-emit the beam is sent to the ion implanter. In this way, when it is determined that the voltage signal or the beam has returned to normal within a set time range, ions can be supplemented in the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuations, thereby solving the problem of poor injection stability of the ion implanter caused by abnormal fluctuations (for example, glitch changes), thereby improving the injection stability of the ion implanter.

[0141] Moreover, based on the above method, during the ion implantation process, it is possible to quickly and effectively detect whether there is an abnormality in the power supply of the ion implanter, so as to take reasonable ion replenishment or re-injection measures (i.e., abnormality handling process) for abnormal interruptions that occur during the ion implantation process, thereby ensuring that the process performance of the target entity is not affected.

[0142] Furthermore, based on the same technical concept, the embodiment of the present application provides an abnormality handling device for an ion implanter, and the abnormality handling device for an ion implanter is used to implement the above-mentioned method flow of the embodiment of the present application. Figure 8 As shown, the abnormality handling device 900 of the ion implanter may include: a signal acquisition module 901, a position determination module 902 and an ion implantation module 903, wherein:

[0143] The signal acquisition module 901 is configured to acquire a voltage signal of an ion implanter performing ion implantation on a target entity and to send a first control instruction to the ion implanter when the voltage signal fluctuates abnormally. The voltage signal is used to represent the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam.

[0144] A position determination module 902 is configured to send a second control instruction to the ion implanter when determining to move the target entity from its current position to a first position; wherein the first position is an end position of the target entity during the ion implantation process, and the second control instruction is configured to instruct the ion implanter to re-emit the beam;

[0145] The ion implantation module 903 is configured to perform ion implantation on the abnormal ion implantation region of the target entity based on the ion implantation information corresponding to the abnormal fluctuation if the voltage signal returns to normal within a set time range.

[0146] In an optional embodiment, when acquiring a voltage signal of an ion implanter performing ion implantation on a target entity, the signal acquisition module 901 is specifically configured to:

[0147] Acquire the analog signal when the ion implanter implants ions into the target entity, and perform analog-to-digital conversion on the analog signal to obtain the corresponding digital signal;

[0148] The digital signal is filtered to obtain a voltage signal.

[0149] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module 903 is specifically configured to:

[0150] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along a first direction, the target entity is moved from the first position to a second position; wherein the first direction is the direction from the first position to the second position, and the second position is the other end position of the target entity during the ion implantation movement;

[0151] The target entity is moved along a second direction until the abnormal ion implantation area is replenished; wherein the second direction is a direction from the second position to the first position.

[0152] In an optional embodiment, before moving the target entity from the first position to the second position, the ion implantation module 903 is further configured to:

[0153] A third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam;

[0154] After moving the target entity from the first position to the second position, and before moving the target entity along the second direction until the abnormal ion implantation area is completed, the ion implantation module 903 is further configured to:

[0155] A fourth control instruction is sent to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam.

[0156] In an optional embodiment, when performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation, the ion implantation module 903 is specifically configured to:

[0157] If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is replenished;

[0158] The second direction is a direction from the second position to the first position, and the first direction is a direction from the first position to the second position.

[0159] In an optional embodiment, after the second control instruction is sent to the ion implanter, the ion implantation module is further configured to:

[0160] If the voltage signal does not recover to normal within the set time range, the target entity is removed, and prompt information is sent to the target object; the prompt information is used to remind the target object to perform ion replenishment on the target entity.

[0161] Based on the description of the method embodiments and the device embodiments, an electronic device is further provided in the exemplary embodiments of the present application, including at least one processor, and a memory connected with the at least one processor in communication. The memory stores a computer program capable of being executed by the at least one processor, and the computer program is used to make the electronic device execute the method according to the embodiments of the present application when executed by the at least one processor.

[0162] The embodiments of the present application further provide a non-transitory computer readable storage medium storing a computer program, wherein the computer program is used to make a computer execute the method according to the embodiments of the present application when executed by a processor of the computer.

[0163] The embodiments of the present application further provide a computer program product, including a computer program, wherein the computer program is used to make a computer execute the method according to the embodiments of the present application when executed by a processor of the computer.

[0164] Referring to Figure 9 As shown in the structure block diagram of the electronic device 1000 that can be a server or a client of the present application, which is an example of a hardware device that can be applied to various aspects of the present application. The electronic device is intended to represent a variety of forms of digital electronic computing devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smart phones, wearable devices, and other similar computing devices. The components shown herein, their connections, and relationships, and their functions, are merely examples and are not intended to limit implementations described and / or claimed in this document.

[0165] As Figure 10 Figure 10As shown, the electronic device 1000 includes a computing unit 1001 that can perform various appropriate actions and processes in accordance with a computer program stored in a read only memory (ROM) 1002 or a computer program loaded into a random access memory (RAM) 1003 from a storage unit 1008. Various programs and data required for the operation of the device 1000 can also be stored in the RAM 1003. The computing unit 1001, the ROM 1002, and the RAM 1003 are connected to each other through a bus 1004. An I / O interface 1005 is also connected to the bus 1004.

[0166] A plurality of components in the electronic device 1000 are connected to the I / O interface 1005, including an input unit 1006, an output unit 1007, a storage unit 1008, and a communication unit 1009. The input unit 1006 can be any type of device that can input information to the electronic device 1000, and can receive inputted digital or character information, and generate key signal inputs related to user settings and / or function controls of the electronic device. The output unit 1007 can be any type of device that can present information, and can include, but is not limited to, a display, a speaker, a video / audio output terminal, a vibrator, and / or a printer. The storage unit 1008 can include, but is not limited to, a magnetic disk, an optical disk. The communication unit 1009 allows the electronic device 1000 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks, and can include, but is not limited to, a modem, a network card, an infrared communication device, a wireless communication transceiver, and / or a chipset, such as a Bluetooth device, a WiFi device, a worldwide interoperability for microwave access (WiMax) device, a cellular communication device, and / or the like.

[0167] The computing unit 1001 can be various general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 1001 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any appropriate processors, controllers, microcontrollers, and the like. The computing unit 1001 performs various methods and processes described above. For example, in some embodiments, the above-described abnormality processing method of an ion implanter can be implemented as a computer software program, which is tangibly embodied in a machine-readable medium, such as the storage unit 1008. In some embodiments, part or all of the computer program can be loaded and / or installed onto the electronic device 1000 via the ROM 1002 and / or the communication unit 1009. In some embodiments, the computing unit 1001 can be configured to perform the above-described abnormality processing method of an ion implanter by any other appropriate means, such as by means of firmware.

[0168] Program code for carrying out the methods of the present application can be written in any combination of one or more programming languages. The program code can be provided to a processor or controller of a general purpose computer, special purpose computer, or other programmable data processing apparatus to produce a machine, such that the program code, when executed by the processor or controller, produces the functions / operations specified in the flowcharts and / or the block diagrams. The program code can be embodied entirely on a machine, partially on a machine, as a stand-alone software package, partially on a machine and partially on a remote machine or entirely on a remote machine or server.

[0169] In the context of this application, a machine-readable medium can be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. The machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. A machine-readable medium can include but is not limited to an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any suitable combination of the foregoing. More specific examples of the machine-readable storage medium will include one or more lines of electrical connections, portable computer disks, hard disk, RAM, ROM, erasable programmable read-only memory (EPROM) or flash memory, fiber optics, portable compact disc read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0170] As used in this application, the terms "machine-readable medium" and "computer- readable medium" refer to any computer program product, apparatus and / or device (e.g., magnetic discs, optical disks, memory, Programmable Logic Devices (PLDs)) used to provide machine instructions and / or data to a programmable processor, including a machine-readable medium that receives machine instructions as a machine-readable signal. The term "machine-readable signal" refers to any signal used to provide machine instructions and / or data to a programmable processor.

[0171] To provide for interaction with a user, the systems and techniques described here can be implemented on a computer having a display device (e.g., a cathode ray tube (CRT) or liquid crystal display (LCD) monitor) for displaying information to the user and a keyboard and a pointing device (e.g., a mouse or a trackball) by which the user can provide input to the computer. Other kinds of devices can be used to provide for interaction with a user as well; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form, including acoustic, speech, or tactile input.

[0172] The systems and techniques described herein can be implemented in a computing system that includes a back end component, e.g., as a data server, or that includes a middleware component, e.g., an application server, or that includes a front end component, e.g., a user computer having a graphical user interface or a Web browser through which a user can interact with an implementation of the systems and techniques described herein, or any combination of such back end, middleware, or front end components. The components of the system can be interconnected by any form or medium of digital data communication, e.g., a communication network. Examples of communication networks include a local area network (LAN), a wide area network (WAN), and the Internet.

[0173] The computer system can include clients and servers. A client and server are generally remote from each other and typically interact through a communication network. The relationship of client and server arises by virtue of computer programs running on the respective computers and having a client-server relationship to each other.

[0174] Moreover, it is to be understood that the above-described embodiments are only illustrative of the application and that modifications can be made by those skilled in the art, without departing from the scope of the application as disclosed in the following claims.

Claims

1. A method for handling abnormalities in an ion implanter, characterized in that: include: Acquiring a voltage signal of an ion implanter performing ion implantation on a target entity, and sending a first control instruction to the ion implanter when the voltage signal has abnormal fluctuations; wherein the voltage signal is used to represent the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; When it is determined that the target entity is to be moved from a current position to a first position, a second control instruction is sent to the ion implanter; wherein the first position is an end position of the target entity during the ion implantation movement process, and the second control instruction is used to instruct the ion implanter to re-emit the beam; If the voltage signal returns to normal within a set time range, the abnormal ion injection area of ​​the target entity is ion-replenished based on the ion injection information corresponding to the abnormal fluctuation; wherein, the ion-replenishing of the abnormal ion injection area of ​​the target entity based on the ion injection information corresponding to the abnormal fluctuation includes: if it is determined based on the ion injection information that the abnormal fluctuation occurs during the movement of the target entity along the first direction, a third control instruction is sent to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam; move the target entity from the first position to the second position; wherein the first direction is the direction from the first position to the second position, and the second position is the other endpoint position of the target entity during the ion injection movement; send a fourth control instruction to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam; move the target entity along the second direction until the replenishment of the abnormal ion injection area is completed; wherein, the second direction is the direction from the second position to the first position.

2. The method according to claim 1, wherein The step of obtaining a voltage signal of an ion implanter for performing ion implantation on a target entity includes: Acquiring an analog signal when the ion implanter performs ion implantation on the target entity, and performing analog-to-digital conversion on the analog signal to obtain a corresponding digital signal; The digital signal is filtered to obtain the voltage signal.

3. The method according to claim 1, wherein The abnormal fluctuation is that the voltage fluctuation amplitude in the voltage signal is less than or equal to a set fluctuation amplitude threshold, and / or the abnormal fluctuation time is greater than or equal to a set time threshold.

4. The method according to any one of claims 1 to 3, wherein The performing ion supplementation on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation includes: If it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along the second direction, the target entity is moved along the first direction until the abnormal ion implantation area is refilled; The second direction is the direction from the second position to the first position, the first direction is the direction from the first position to the second position, and the second position is another endpoint position of the target entity during the ion implantation movement process.

5. The method according to any one of claims 1 to 3, wherein After sending the second control instruction to the ion implanter, the method further includes: If the voltage signal does not return to normal within a set time range, the target entity is removed and a prompt message is sent to the target object; the prompt message is used to remind the target object to perform ion replenishment on the target entity.

6. An abnormality handling device for an ion implanter, characterized in that: include: a signal acquisition module, configured to acquire a voltage signal of an ion implanter performing ion implantation on a target entity, and to send a first control instruction to the ion implanter when the voltage signal fluctuates abnormally; wherein the voltage signal is used to represent the size of the beam emitted by the ion implanter, and the first control instruction is used to instruct the ion implanter to stop emitting the beam; a position determination module, configured to send a second control instruction to the ion implanter when determining to move the target entity from its current position to a first position; wherein the first position is an endpoint position of the target entity during the ion implantation process, and the second control instruction is configured to instruct the ion implanter to re-emit the beam; An ion implantation module is configured to, if the voltage signal returns to normal within a set time range, perform ion replenishment on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation; wherein, the ion replenishment on the abnormal ion implantation area of ​​the target entity based on the ion implantation information corresponding to the abnormal fluctuation comprises: if it is determined based on the ion implantation information that the abnormal fluctuation occurs during the movement of the target entity along a first direction, sending a third control instruction to the ion implanter; the third control instruction is used to instruct the ion implanter to turn off the beam; move the target entity from the first position to the second position; wherein the first direction is the direction from the first position to the second position, and the second position is the other endpoint position of the target entity during the ion implantation movement; sending a fourth control instruction to the ion implanter; the fourth control instruction is used to instruct the ion implanter to turn on the beam; move the target entity along the second direction until the replenishment of the abnormal ion implantation area is completed; wherein, the second direction is the direction from the second position to the first position.

7. An electronic device comprising: processor; as well as Memory for storing programs, The program includes instructions, which, when executed by the processor, cause the processor to perform the method according to any one of claims 1 to 5.

8. A non-transitory computer-readable storage medium storing computer instructions, wherein: The computer instructions are used to cause the computer to execute the method according to any one of claims 1 to 5.

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