Ion implanter dose control system, method, and electronic device

Abstract

The application provides a kind of ion implanter dose control system, applied to control and adjust system technical field, the dose control system includes: PLC controller, I / O data acquisition module and motion control module, PLC controller is connected with I / O data acquisition module, motion control module, PLC controller is provided with the control logic of each kind of dose control of ion implanter, motion control module is loaded with wafer, I / O data acquisition module acquires each industrial parameter of ion implanter, by PLC controller according to each process parameter collected by I / O data acquisition module, determine target injection dose, target injection speed, and directly control motion control module motion according to the target injection dose, target injection speed, can make ion implanter according to the target injection dose, target injection speed wafer is ion implanted. Select the embodiment of the application, effectively overcome the problem of low response efficiency, low processing precision in the existing dose control system.

Description

Technical Field

[0001] This application relates to the field of general control or regulation system technology, and in particular to a dose control system, method and electronic equipment for an ion implanter. Background Technology

[0002] An ion implanter is a process equipment that can transform insulators into semiconductor materials with conductive properties. In an ion implanter, the dosage control system is the core technology of a large-beam ion implanter. Through this dosage control system, the energy, current and ion type of the ion beam are precisely controlled. The precision and accuracy of the dosage control system of the ion implanter will directly determine the precision of the wafers produced by the ion implanter.

[0003] However, existing dose control systems suffer from low response efficiency and low processing accuracy because the dose control logic is processed by different dose control subsystems. When controlling the ion implantation dose of the ion implanter, each dose control subsystem responds to its own process control logic. Summary of the Invention

[0004] In view of this, embodiments of this application provide an ion implanter dose control system, method, and electronic device to improve the response efficiency and processing accuracy of the ion implanter dose control system.

[0005] In a first aspect, embodiments of this application provide a dose control system for an ion implanter, wherein the dose control system includes: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to the I / O data acquisition module and the motion control module respectively; the PLC controller is provided with control logic for various dose controls of the ion implanter; a wafer is mounted on the motion control module; the PLC controller is used for:

[0006] Based on the process parameters of the ion implanter acquired by the I / O data acquisition module, the target implantation dose and target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed.

[0007] In some possible embodiments, the dose control system further includes an industrial Ethernet bus, through which the PLC controller is connected to the I / O data acquisition module and the motion control module respectively.

[0008] In some possible embodiments, the dosage control system further includes: a host computer, the host computer including: a user interface, wherein the host computer is connected to the PLC controller, the PLC controller integrates a pre-set industrial program programming platform, the pre-set industrial program programming platform contains various industrial control library files, and the PLC controller is further used for:

[0009] The system receives various dose control logics sent by the host computer, wherein the various dose control logics are software control logic programs written by the user on the user interface based on various industrial control library files.

[0010] The control logic for various dose controls is executed according to a preset execution cycle.

[0011] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1ms, where the execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into the PLC controller once.

[0012] In some possible embodiments, the process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the PLC controller, and are further used for:

[0013] If an abnormal voltage occurs in the voltage of the ion beam, an anomaly handling control logic is triggered; wherein, the anomaly handling control logic is used to provide anomaly protection for the wafer when an abnormal voltage occurs in the voltage of the ion beam, specifically including:

[0014] The target position coordinates of the motion control module are recorded at the moment the abnormal voltage occurs, and the supplementary injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection at the target position coordinates according to the supplementary injection dose.

[0015] In some possible embodiments, the process parameters include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time). The PLC controller determines the target implantation dose (Dose) using the following formula:

[0016] In some possible embodiments, the process parameters further include: NumberPass (implantation count), WidthWafer (wafer width), and the PLC controller determines the target implantation speed ScanVelocity using the following formula:

[0017]

[0018] Secondly, embodiments of this application provide a dose control method for an ion implanter, wherein the method is applied to the dose control system for the ion implanter described in the first aspect, and wherein the method includes:

[0019] Collect various process parameters of the ion implanter, and determine the target implantation dose and target implantation rate based on the process parameters.

[0020] The motion control module carrying the wafer is moved according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed.

[0021] In some possible embodiments, the dose control system further includes an industrial Ethernet bus, through which the PLC controller is connected to the I / O data acquisition module and the motion control module respectively.

[0022] In some possible embodiments, the dose control system further includes: a host computer, the host computer including: a user interface, wherein the host computer is connected to the PLC controller, the PLC controller integrates a pre-set industrial program programming platform, the pre-set industrial program programming platform having pre-set various industrial control library files, and the method further includes:

[0023] The system receives various dose control logics sent by the host computer, wherein the various dose control logics are software control logic programs written by the user on the user interface based on various industrial control library files.

[0024] The control logic for various dose controls is executed according to a preset execution cycle.

[0025] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1ms, where the execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into the PLC controller once.

[0026] In some possible embodiments, the process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the method further includes:

[0027] If an abnormal voltage occurs in the voltage of the ion beam, an anomaly handling control logic is triggered; wherein, the anomaly handling control logic is used to provide anomaly protection for the wafer when an abnormal voltage occurs in the voltage of the ion beam, specifically including:

[0028] The target position coordinates of the motion control module are recorded at the moment the abnormal voltage occurs, and the supplementary injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection at the target position coordinates according to the supplementary injection dose.

[0029] In some possible embodiments, the process parameters include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time), wherein the target implantation dose (Dose) is determined by the following formula:

[0030]

[0031] In some possible embodiments, the process parameters further include: NumberPass (implantation number), WidthWafer (wafer width), and the target implantation speed ScanVelocity is determined by the following formula:

[0032] Thirdly, embodiments of this application provide an electronic device, wherein the electronic device includes:

[0033] Processor; and

[0034] Stored program memory,

[0035] The program includes instructions that, when executed by the processor, cause the processor to perform the ion implanter dose control method described in the second aspect.

[0036] Fourthly, embodiments of this application provide a non-transitory computer-readable storage medium storing computer instructions, wherein the computer instructions are used to cause a computer to execute the ion implanter dose control method described in the second aspect.

[0037] The beneficial effects of this application are:

[0038] This application provides a dose control system for an ion implanter, which includes a PLC controller, an I / O data acquisition module, and a motion control module. The PLC controller is connected to the I / O data acquisition module and the motion control module. The PLC controller contains control logic for various dose controls of the ion implanter. The motion control module is equipped with a wafer. The I / O data acquisition module collects various industrial parameters of the ion implanter. Then, the PLC controller determines the target implantation dose and target implantation speed based on the process parameters collected by the I / O data acquisition module. Then, it directly controls the motion control module to move according to the target implantation dose and target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and target implantation speed.

[0039] In the embodiment of this application, the PLC controller has built-in control logic for various dose control functions of the ion implanter. The PLC controller responds quickly and uniformly to the various process parameters collected by the input I / O data acquisition module and determines the corresponding target implantation dose and target implantation speed. Compared with the existing technology where different dose control subsystems perform dose control separately, the embodiment of this application can achieve efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system. Attached Figure Description

[0040] Further details, features, and advantages of this application are disclosed in the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0041] Figure 1 This paper illustrates a schematic diagram of a system architecture for an ion implanter dosage control system provided in an embodiment of this application.

[0042] Figure 2 This paper illustrates another system architecture diagram of the ion implanter dosage control system provided in an embodiment of this application;

[0043] Figure 3 This invention provides a schematic diagram of an ion implanter according to an embodiment of the present application.

[0044] Figure 4 This paper illustrates a flowchart of an ion implanter dosage control method provided in an embodiment of this application.

[0045] Figure 5 A structural block diagram of an exemplary electronic device that can be used to implement embodiments of this application is shown. Detailed Implementation

[0046] Embodiments of this application will now be described in more detail with reference to the accompanying drawings. While some embodiments of this application are shown in the drawings, it should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of this application. It should be understood that the drawings and embodiments of this application are for illustrative purposes only and are not intended to limit the scope of protection of this application.

[0047] It should be understood that the steps described in the method embodiments of this application may be performed in different orders and / or in parallel. Furthermore, the method embodiments may include additional steps and / or omit the steps shown. The scope of this application is not limited in this respect.

[0048] The term "comprising" and its variations as used herein are open-ended, meaning "including but not limited to". The term "based on" means "at least partially based on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Definitions of other terms will be given in the following description. It should be noted that the concepts of "first", "second", etc., mentioned in this application are used only to distinguish different devices, modules, or units, and are not intended to limit the order of functions performed by these devices, modules, or units or their interdependencies.

[0049] It should be noted that the terms "a" and "a plurality of" used in this application are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise expressly indicated in the context, they should be understood as "one or more".

[0050] To improve the accuracy and response efficiency of the ion implanter dosage control system, this application provides an ion implanter dosage control system, method, and electronic device. In a first aspect, this application provides an ion implanter dosage control system, which is an auxiliary system for an ion implanter and encompasses a general term for the hardware and software systems used to achieve dosage control of the ion implanter. As one implementation, this ion implanter dosage control system is deployed in any electronic device capable of ion implanter dosage control, such as a mobile terminal, computer, industrial control computer, server, etc.

[0051] In some embodiments, the ion implanter dose control system provided in this application can be as follows: Figure 1As shown, it includes: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to both the I / O data acquisition module and the motion control module; the PLC controller contains control logic for various dose controls of the ion implanter; the motion control module is equipped with a wafer; the PLC controller is used for:

[0052] Based on the process parameters of the ion implanter acquired by the I / O data acquisition module, the target implantation dose and target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed.

[0053] In the embodiment of this application, the PLC controller has built-in control logic for various dose control functions of the ion implanter. The PLC controller responds quickly and uniformly to the various process parameters collected by the input I / O data acquisition module and determines the corresponding target implantation dose and target implantation speed. Compared with the existing technology where different dose control subsystems perform dose control separately, the embodiment of this application can achieve efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system.

[0054] The following section will provide a detailed description of each part of the ion implanter dose control system provided in this application, using specific examples:

[0055] In this embodiment, the PLC controller stands for Programmable Logic Controller. A PLC controller is a microprocessor-based digital controller for automation control, capable of loading control instructions into memory for storage and execution. Specifically, the PLC controller consists of a CPU, instruction and data memory, input / output interfaces, power supply, digital-to-analog converter, and other functional units. In the application scenario of this embodiment, since the ion implanter is a high-precision semiconductor manufacturing device, to ensure the process quality of the wafers produced by the ion implanter, the processing accuracy of the PLC controller needs to reach the millisecond level, especially the execution cycle of the PLC controller needs to reach the millisecond level.

[0056] As one implementation method, the execution cycle t of the PLC controller should be controlled with an accuracy of t ≤ 1ms. Here, the PLC execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into it once. Using the embodiment of this application, the PLC controller can ensure that each built-in dose control logic is executed once every 1 millisecond or even less than 1 millisecond, thereby ensuring that the dose control system can efficiently and accurately determine the dose during ion implantation by the ion implanter, further guaranteeing the product quality of the wafers produced by the ion implanter.

[0057] In this embodiment, the PLC controller has built-in control logic for various dose controls of the ion implanter. Each control logic is defined at the software level as a software control logic program, which is written and stored within the PLC controller by the ion implanter user according to process requirements. Specifically, the PLC controller integrates a pre-set industrial program programming platform, which in turn contains various pre-set industrial control library files. The ion implanter user can write software control logic programs based on these pre-set industrial program programming platform files and ultimately write the written software control logic programs into the PLC controller. In subsequent actual use, the PLC controller executes the built-in software control programs to achieve the corresponding dose control. As a preferred implementation, the pre-set industrial program programming platform can be a programming platform based on the IEC6113 standard, one of the international standards for industrial control programming languages.

[0058] As one implementation method, the ion implanter dose control system provided in this application can be as follows: Figure 2 As shown, it also includes a host computer. The host computer includes a user interface connected to the PLC controller. Users can write corresponding software control logic programs based on various industrial control library files on the user interface of the host computer. The host computer then transmits the software control logic programs corresponding to the user-written control logic for each dose control to the PLC controller, which stores and runs them.

[0059] As mentioned above, the PLC controller has built-in input and output interfaces. In this embodiment, the I / O data acquisition module uses these input interfaces to match the various process parameters of the ion implanter with the various input interfaces of the PLC controller. In this way, the various process parameters collected by the I / O data acquisition module can be obtained through the various input interfaces. These process parameters are the input parameters of the control logic of each dose control. Then, based on the input process parameters, the control logic of various dose control is automatically executed according to the preset execution cycle, that is, the dose control logic integrated in the PLC controller is run, and the corresponding calculation results can be the target injection dose and the target injection speed.

[0060] In this application embodiment, the I / O data acquisition module is a general term for functional modules installed in the ion implanter to monitor whether the various functions of the ion implanter are operating normally. These modules can be sensors, measuring instruments, etc. The specific type of I / O data acquisition module may vary depending on the actual process scenario, and this application does not impose strict limitations. The I / O data acquisition module determines whether the ion implanter is functioning normally by monitoring various process parameters of the ion implanter. Process parameters are the various physical parameters that maintain the ion implantation process, including electrical parameters and mechanical parameters. Electrical parameters may include various electrical information of the ion beam of the ion implanter, such as the voltage, current, impedance, and inductive reactance of the ion beam. Mechanical parameters may include various mechanical information of the ion beam and the motion control module, such as the current intensity of the ion beam and the coordinates of the motion control module.

[0061] As one implementation method, the I / O data acquisition module can be an EtherCAT fiber optic communication acquisition module, which has a 16-bit digital-to-analog converter function and possesses high sampling accuracy and anti-interference capability. The sampling period of the I / O acquisition module must meet the following requirement: a sampling period of 1ms, enabling millisecond-level data update sampling, improving ion beam acquisition capability, and helping to enhance signal sampling capability and accurately determine voltage fluctuations in the ion implanter dosage.

[0062] As one implementation method, the process parameters include: the voltage of the ion beam and the position coordinates of the motion control module. The PLC controller integrates exception handling control logic. Based on this, the PLC controller is also used for:

[0063] If an abnormal voltage occurs in the voltage of the ion beam, an anomaly handling control logic is triggered; wherein, the anomaly handling control logic is used to provide anomaly protection for the wafer when an abnormal voltage occurs in the voltage of the ion beam, specifically including:

[0064] The target position coordinates of the motion control module are recorded at the moment the abnormal voltage occurs, and the supplementary injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection at the target position coordinates according to the supplementary injection dose.

[0065] The electrical system of an ion implanter contains numerous high-voltage power supplies. Fluctuations in the power supply can affect the ion implantation process, including Glitch voltage, also known as spark voltage. In this embodiment, if the Glitch voltage appears in the ion beam voltage, it indicates an abnormal voltage. This triggers the abnormal handling control logic integrated in the PLC controller, automatically running the corresponding software control logic program to protect the wafer from abnormality. Specifically, the target position coordinates of the motion control module at the moment the abnormal voltage occurs are recorded. The currently implanted dose is determined based on the target implantation speed, and the remaining dose is determined based on the pre-defined required implantation dose. This is the supplementary implantation dose. Subsequently, during the operation of the ion implanter, supplementary implantation is performed at the target coordinate position according to the supplementary implantation dose.

[0066] In this embodiment, the motion control module is the core module of the ion implanter that carries the implantation target—the wafer. By loading the wafer to be ion implanted to the position corresponding to the ion beam through this motion control module, ion implantation of the wafer can be achieved. As one implementation, the motion control module includes a servo motor, which controls the movement of the loaded wafer within a corresponding range of motion. For details on how to implement abnormal protection against Glitch voltage, please refer to the applicant's relevant patent applications; these details will not be elaborated here.

[0067] In some possible embodiments, the dose control system provided in this application may also be as follows: Figure 2 As shown, the system includes an industrial Ethernet bus (Ethercat bus). The PLC controller is connected to the I / O data acquisition module and the motion control module via the industrial Ethernet bus. In this embodiment, the PLC controller sends drive signals to the servo motor of the motion control module via the industrial Ethernet bus. The PLC controller can control the movement of the servo motor in the motion control module, thus eliminating the need for a dedicated control board for the servo motor and reducing the overall system cost of the ion implanter dosage control system.

[0068] In an ion implantation dosage control system, the most critical controlled object is the ion beam; therefore, the measurement of the ion beam current is crucial to the entire ion implanter. The integral of the ion beam current characterizes the overall magnitude of the ion beam, while the uniformity of the ion beam current within the implantation range characterizes its horizontal distribution and fluctuations. Specifically, dosage control can be achieved through an "ion beam current - position coordinate" distribution curve, where one position coordinate corresponds to one ion beam. As one implementation method, the PLC controller is connected to both the motion control module and the I / O data acquisition module. The PLC controller can simultaneously perform data acquisition and calculation in parallel. Specifically, it calculates the ion implantation dose and ion implantation speed to assess the ion beam implantation process.

[0069] In this embodiment, the implantation dose refers to the number of ions implanted per unit area of ​​the wafer, and the implantation speed refers to the speed at which ions are implanted onto the wafer. Specifically, as one implementation, after obtaining the position coordinates corresponding to the motion control module, the implantation dose and the corresponding target implantation speed corresponding to that position coordinate can be calculated. As one implementation, the process parameters acquired by the I / O data acquisition module include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time). Based on this, the ion implantation dose (Dose) corresponding to a position coordinate can be calculated using the following formula preset within the fast dose-based control logic:

[0070]

[0071] Based on the calculated implantation dose, the following process parameters acquired by the I / O data acquisition module can also be obtained: Number Pass and Width Wafer. Then, based on the following formula preset in the dose control logic, the ion implantation rate ScanVelocity corresponding to a position coordinate can be calculated:

[0072]

[0073] It is worth noting that the wafer implantation process is carried out using methods such as... Figure 3 The implantation diagram shown indicates that the high position is the starting position of ion implantation and the low position is the key position of ion implantation. In order to ensure that the scanning time of each region on the wafer is consistent and uniform, horizontal overscan distance and vertical overscan distance need to be added in the horizontal and vertical directions. Assuming that the ion beam is uniformly distributed inside and the magnitude of the ion beam is constant during each implantation, the corresponding implantation dose and implantation speed can be calculated using the above two formulas respectively.

[0074] Secondly, this application provides a dose control method for an ion implanter. This method is applied to an ion implanter dose control system as described in the first aspect. This ion implanter dose control system can be deployed in any electronic device with ion implanter dose control capabilities. The type of electronic device includes, but is not limited to, personal mobile terminals, computers, industrial control computers, or servers. In the embodiments of this application, the ion implanter dose control method can be as follows: Figure 4 As shown, it includes the following steps:

[0075] S41. Collect various process parameters of the ion implanter, and determine the target implantation dose and target implantation rate based on the process parameters.

[0076] S42. Control the motion control module loaded with the wafer to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed.

[0077] In the embodiment of this application, the PLC controller has built-in control logic for various dose control functions of the ion implanter. The PLC controller responds quickly and uniformly to the various process parameters collected by the input I / O data acquisition module and determines the corresponding target implantation dose and target implantation speed. Compared with the existing technology where different dose control subsystems perform dose control separately, the embodiment of this application can achieve efficient and accurate dose control of the ion implanter equipment, effectively overcoming the problems of low response efficiency and low processing accuracy in the existing dose control system.

[0078] In some possible embodiments, the dose control system further includes an industrial Ethernet bus, through which the PLC controller is connected to the I / O data acquisition module and the motion control module respectively.

[0079] In some possible embodiments, the dose control system further includes: a host computer, the host computer including: a user interface, wherein the host computer is connected to the PLC controller, the PLC controller integrates a pre-set industrial program programming platform, the pre-set industrial program programming platform having pre-set various industrial control library files, and the method further includes:

[0080] The system receives various dose control logics sent by the host computer, wherein the various dose control logics are software control logic programs written by the user on the user interface based on various industrial control library files.

[0081] The control logic for various dose controls is executed according to a preset execution cycle.

[0082] In some possible embodiments, the execution cycle t of the PLC controller should satisfy: t≤1ms, where the execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into the PLC controller once.

[0083] In some possible embodiments, the process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the method further includes:

[0084] If an abnormal voltage occurs in the voltage of the ion beam, an anomaly handling control logic is triggered; wherein, the anomaly handling control logic is used to provide anomaly protection for the wafer when an abnormal voltage occurs in the voltage of the ion beam, specifically including:

[0085] The target position coordinates of the motion control module are recorded at the moment the abnormal voltage occurs, and the supplementary injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection at the target position coordinates according to the supplementary injection dose.

[0086] In some possible embodiments, the process parameters include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time), wherein the target implantation dose (Dose) is determined by the following formula:

[0087]

[0088] In some possible embodiments, the process parameters further include: NumberPass (implantation number), WidthWafer (wafer width), and the target implantation speed ScanVelocity is determined by the following formula:

[0089] The names of the messages or information exchanged between multiple devices in the embodiments of this application are for illustrative purposes only and are not intended to limit the scope of these messages or information.

[0090] Thirdly, exemplary embodiments of this application also provide an electronic device, including: at least one processor; and a memory communicatively connected to the at least one processor. The memory stores a computer program executable by the at least one processor, the computer program being executed by the at least one processor to cause the electronic device to perform a method according to an embodiment of this application.

[0091] An exemplary embodiment of this application also provides a non-transitory computer-readable storage medium storing a computer program, wherein the computer program, when executed by a computer's processor, is used to cause the computer to perform a method according to an embodiment of this application.

[0092] An exemplary embodiment of this application also provides a computer program product, including a computer program, wherein, when executed by a computer's processor, the computer program is used to cause the computer to perform a method according to an embodiment of this application.

[0093] refer to Figure 5 The present invention describes a structural block diagram of an electronic device 500 that can serve as a server or client of this application, which is an example of a hardware device that can be applied to various aspects of this application. The electronic device is intended to represent various forms of digital electronic computer devices, such as laptop computers, desktop computers, workstations, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The electronic device can also represent various forms of mobile devices, such as personal digital processors, cellular phones, smartphones, wearable devices, and other similar computing devices. The components shown herein, their connections and relationships, and their functions are merely illustrative and are not intended to limit the implementation of the application described and / or claimed herein.

[0094] like Figure 5 As shown, the electronic device 500 includes a computing unit 501, which can perform various appropriate actions and processes according to a computer program stored in a read-only memory (ROM) 502 or a computer program loaded from a storage unit 508 into a random access memory (RAM) 503. The RAM 503 may also store various programs and data required for the operation of the electronic device 500. The computing unit 501, ROM 502, and RAM 503 are interconnected via a bus 504. An input / output (I / O) interface 505 is also connected to the bus 504.

[0095] Multiple components in electronic device 500 are connected to I / O interface 505, including: input unit 506, output unit 507, storage unit 508, and communication unit 509. Input unit 506 can be any type of device capable of inputting information to electronic device 500. Input unit 506 can receive input digital or character information and generate key signal inputs related to user settings and / or function control of electronic device. Output unit 507 can be any type of device capable of presenting information and may include, but is not limited to, a display, speaker, video / audio output terminal, vibrator, and / or printer. Storage unit 508 may include, but is not limited to, disk and optical disk. Communication unit 509 allows electronic device 500 to exchange information / data with other devices through computer networks such as the Internet and / or various telecommunications networks, and may include, but is not limited to, modems, network cards, infrared communication devices, wireless communication transceivers, and / or chipsets, such as Bluetooth™ devices, WiFi devices, WiMax devices, cellular communication devices, and / or the like.

[0096] The computing unit 501 can be a variety of general-purpose and / or special-purpose processing components with processing and computing capabilities. Some examples of the computing unit 501 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various special-purpose artificial intelligence (AI) computing chips, various computing units running machine learning model algorithms, a digital signal processor (DSP), and any suitable processor, controller, microcontroller, etc. The computing unit 501 performs the various methods and processes described above. For example, in some embodiments, the aforementioned ion implanter dose control method can be implemented as a computer software program tangibly contained in a machine-readable medium, such as storage unit 508. In some embodiments, part or all of the computer program can be loaded and / or installed on the electronic device 500 via ROM 502 and / or communication unit 509. In some embodiments, the computing unit 501 can be configured to perform the aforementioned ion implanter dose control method by any other suitable means (e.g., by means of firmware).

[0097] The program code used to implement the methods of this application may be written in any combination of one or more programming languages. This program code may be provided to a processor or controller of a general-purpose computer, special-purpose computer, or other programmable data processing device, such that when executed by the processor or controller, the functions / operations specified in the flowcharts and / or block diagrams are implemented. The program code may be executed entirely on a machine, partially on a machine, as a standalone software package partially on a machine and partially on a remote machine, or entirely on a remote machine or server.

[0098] In the context of this application, a machine-readable medium can be a tangible medium that may contain or store a program for use by or in conjunction with an instruction execution system, apparatus, or device. A machine-readable medium can be a machine-readable signal medium or a machine-readable storage medium. Machine-readable media can be, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, apparatus, or devices, or any suitable combination of the foregoing. More specific examples of machine-readable storage media include electrical connections based on one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fibers, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0099] As used in this application, the terms "machine-readable medium" and "computer-readable medium" refer to any computer program product, device, and / or apparatus (e.g., disk, optical disk, memory, programmable logic device (PLD)) for providing machine instructions and / or data to a programmable processor, including machine-readable media that receive machine instructions as machine-readable signals. The term "machine-readable signal" refers to any signal for providing machine instructions and / or data to a programmable processor.

[0100] To provide interaction with a user, the systems and techniques described herein can be implemented on a computer having: a display device for displaying information to the user (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor); and a keyboard and pointing device (e.g., a mouse or trackball) through which the user provides input to the computer. Other types of devices can also be used to provide interaction with the user; for example, feedback provided to the user can be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user can be received in any form (including sound input, voice input, or tactile input).

[0101] The systems and technologies described herein can be implemented in computing systems that include backend components (e.g., as a data server), or computing systems that include middleware components (e.g., an application server), or computing systems that include frontend components (e.g., a user computer with a graphical user interface or web browser through which a user can interact with embodiments of the systems and technologies described herein), or any combination of such backend, middleware, or frontend components. The components of the system can be interconnected via digital data communication of any form or medium (e.g., a communication network). Examples of communication networks include local area networks (LANs), wide area networks (WANs), and the Internet.

[0102] Computer systems can include clients and servers. Clients and servers are generally located far apart and typically interact through communication networks. Client-server relationships are created by computer programs running on the respective computers and having a client-server relationship with each other.

Claims

1. A dosage control system for an ion implanter, characterized in that, The dosage control system includes: a PLC controller, an I / O data acquisition module, and a motion control module, wherein the PLC controller is connected to both the I / O data acquisition module and the motion control module; the PLC controller contains control logic for various dosage controls of the ion implanter; a wafer is mounted on the motion control module; the PLC controller is used for: Based on the process parameters of the ion implanter acquired by the I / O data acquisition module, the target implantation dose and target implantation speed are determined, and the motion control module is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed; The execution cycle t of the PLC controller should satisfy: t≤1ms, where the execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into the PLC controller once; The process parameters include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time). The PLC controller determines the target implantation dose (Dose) using the following formula: ; The process parameters also include: NumberPass (number of implantations) and WidthWafer (wafer width). The PLC controller determines the target implantation speed ScanVelocity using the following formula: .

2. The dose control system according to claim 1, characterized in that, The dosage control system further includes an industrial Ethernet bus, through which the PLC controller is connected to the I / O data acquisition module and the motion control module respectively.

3. The dose control system according to claim 1, characterized in that, The dosage control system further includes a host computer, which includes a user interface. The host computer is connected to the PLC controller, which integrates a pre-set industrial programming platform containing various industrial control library files. The PLC controller is also used for: The system receives various dose control logics sent by the host computer, wherein the various dose control logics are software control logic programs written by the user on the user interface based on various industrial control library files. The control logic for various dose controls is executed according to a preset execution cycle.

4. The dose control system according to claim 1, characterized in that, The process parameters include: the voltage of the ion beam, the position coordinates of the motion control module, and the PLC controller, which is also used for: If an abnormal voltage occurs in the voltage of the ion beam, an anomaly handling control logic is triggered; wherein, the anomaly handling control logic is used to provide anomaly protection for the wafer when an abnormal voltage occurs in the voltage of the ion beam, specifically including: The target position coordinates of the motion control module are recorded at the moment the abnormal voltage occurs, and the supplementary injection dose at the target position coordinates is determined according to the target injection dose and the target injection speed, so that the ion implanter can subsequently perform supplementary injection at the target position coordinates according to the supplementary injection dose.

5. A dosage control method for an ion implanter, characterized in that, The method is applied to the ion implanter dose control system as described in any one of claims 1-4, and the method includes: Collect various process parameters of the ion implanter, and determine the target implantation dose and target implantation rate based on the process parameters. The motion control module carrying the wafer is controlled to move according to the target implantation speed, so that the ion implanter performs ion implantation on the wafer according to the target implantation dose and the target implantation speed. The execution cycle t of the PLC controller in the ion implanter dosage control system should satisfy: t≤1ms, where the execution cycle refers to the time it takes for the PLC controller to execute the software control logic program built into the PLC controller once. The process parameters include: ion beam intensity (BeamCurrent), area through which the ion beam flows, and ion implantation time (Time). The PLC controller determines the target implantation dose (Dose) using the following formula: ; The process parameters also include: NumberPass (number of implantations) and WidthWafer (wafer width). The PLC controller determines the target implantation speed ScanVelocity using the following formula: .

6. An electronic device, characterized in that, The electronic device includes: Processor; and Stored program memory, The program includes instructions that, when executed by the processor, cause the processor to perform the method according to claim 5.

7. A non-transitory computer-readable storage medium storing computer instructions, characterized in that, The computer instructions are used to cause the computer to perform the method according to claim 5.

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