Plasma processing apparatus and etching apparatus

Abstract

The embodiment of the application provides a kind of plasma processing device and etching equipment, it is related to semiconductor technical field.The plasma processing device includes bushing, baffle, drive mechanism and stopper;The side wall of bushing has opening, baffle is connected with drive mechanism, drive mechanism can control baffle to lift, to cover opening;Stopper is installed between bushing and baffle.When baffle is covered to the opening of bushing by drive mechanism control, stopper limits baffle, so that there is preset gap between baffle and bushing in the lifting direction of baffle, so that baffle and bushing are not in contact, avoid the collision between baffle and bushing in the process of baffle lifting, and then the function of the components of plasma processing device can be guaranteed, and the pollutants in the reaction space of plasma processing device can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, and in particular to a plasma processing device and an etching equipment. BACKGROUND

[0002] In the etching process of semiconductor manufacturing, whether it is Capacitively Coupled Plasma (CCP) or Inductively Coupled Plasma (ICP), the etching process result is greatly affected by the uniformity of the plasma in the reaction space in the plasma region of the plasma processing device (PM). To achieve plasma uniformity, the reaction space of the plasma processing device is assembled with a liner and a shutter to form a symmetrical and relatively closed space. To achieve wafer transfer between the plasma processing device and the transmission chamber (TM), the shutter needs to be controlled to open and close the wafer transfer port. For example, by controlling the shutter to rise and fall through a pneumatic cylinder, the opening on the sidewall of the liner can be closed or opened, so that the cooperation of the liner and the shutter can block the plasma.

[0003] However, during the lifting of the shutter, the shutter is prone to collide with the liner, causing damage to the components and their coatings of the plasma processing device, affecting the function of the components of the plasma processing device, and increasing the contamination in the reaction space of the plasma processing device. SUMMARY

[0004] The embodiments of the present application provide a plasma processing device and an etching equipment to avoid the problem of collision between the shutter and the liner during the lifting of the shutter.

[0005] In one aspect, the embodiments of the present application provide a plasma processing device, comprising a liner, a shutter, a driving mechanism and a stopper;

[0006] The sidewall of the liner has an opening, the shutter is connected with the driving mechanism, and the driving mechanism is used to control the shutter to rise or fall in a direction perpendicular to the bottom of the plasma processing device to block the opening.

[0007] The stopper is installed between the liner and the shutter, and the stopper is configured to limit the shutter when the shutter blocks the opening, so that the shutter and the liner have a preset gap in the lifting direction of the shutter.

[0008] In a possible implementation, the shielding plate has a stop surface, the bushing has a matching surface, the stop surface and the matching surface are oppositely arranged in the lifting direction of the shielding plate, and the stop member is fixed on the stop surface and / or the matching surface.

[0009] In a possible implementation, the stop member is a magnetic member or an elastic member.

[0010] In a possible implementation, the shielding plate has a first end and a second end, the first end and the second end are oppositely arranged in the lifting direction of the shielding plate, the first end is connected with the driving mechanism, the bushing has a fixed end, the fixed end is oppositely arranged with the second end in the lifting direction of the shielding plate, and the fixed end is provided with a fixed surface.

[0011] When the shielding plate shields the opening, the gap between the second end and the fixed surface is the preset gap.

[0012] In this way, in the lifting process of the shielding plate, the second end of the shielding plate does not contact the fixed end of the bushing, so that collision between the second end of the shielding plate and the fixed end of the bushing in the lifting process of the shielding plate is avoided, the function of the components of the plasma processing device is ensured, and the contamination in the reaction space of the plasma processing device is reduced.

[0013] In a possible implementation, a conductive spiral pipe is fixed on the fixed surface of the bushing or the second end of the shielding plate, when the shielding plate shields the opening, the compression amount of the conductive spiral pipe between the shielding plate and the bushing is a preset compression amount, and the conductive spiral pipe shields the preset gap.

[0014] In this way, when the shielding plate shields the opening, the conductive spiral pipe conducts the shielding plate and the bushing, the conductive spiral pipe shields the preset gap, so that the bushing and the shielding plate, the upper electrode and the lower electrode form a closed space, and the plasma in the reaction cavity is kept uniform.

[0015] In a possible implementation, the device further includes a cavity and a cover, the cavity and the cover enclose a reaction cavity, the bushing, the shielding plate and the stop member are located in the reaction cavity, and the driving mechanism is mounted on the cavity or the cover.

[0016] In a possible implementation, the driving mechanism is mounted on the cavity and located at the bottom of the cavity, the driving mechanism is connected below the shielding plate, and the shielding plate moves towards the top of the cavity to shield the opening; or

[0017] The driving mechanism is installed on the cover, the cover is located at the top of the cavity, the driving mechanism is connected above the shielding plate, and the shielding plate moves towards the bottom of the cavity to shield the opening.

[0018] In a possible implementation, the driving mechanism is an electric motor or a pneumatic cylinder.

[0019] In a possible implementation, the driving mechanism is a pneumatic cylinder.

[0020] When the pneumatic cylinder is connected below the shielding plate, the sum of the elastic force of the conductive coil, the force of the stopper on the shielding plate, the gravity of the piston rod of the pneumatic cylinder and the gravity of the shielding plate is equal to the sum of the thrust of the pneumatic cylinder and one standard atmospheric pressure; or,

[0021] When the pneumatic cylinder is connected above the shielding plate, the sum of the elastic force of the conductive coil and the force of the stopper on the shielding plate is equal to the sum of the thrust of the pneumatic cylinder, one standard atmospheric pressure, the gravity of the piston rod of the pneumatic cylinder and the gravity of the shielding plate.

[0022] In this way, the conductive coil, the stopper, the shielding plate and the pneumatic cylinder are balanced in force, the compression amount of the conductive coil is ensured, the conductive coil is stable, and the gap between the shielding plate and the bushing is ensured, so that the shielding plate and the bushing do not contact in the lifting direction of the shielding plate and are stable.

[0023] In another aspect, the embodiments of the present application provide an etching device, which comprises a transmission cavity and a plasma processing device as described above.

[0024] The plasma processing device and the transmission cavity transmit a wafer.

[0025] The embodiments of the present application provide a plasma processing device and an etching device. When the shielding plate shields the opening of the bushing through the driving mechanism, the stopper limits the shielding plate, so that there is a preset gap between the shielding plate and the bushing in the lifting direction of the shielding plate. The shielding plate and the bushing do not contact during the lifting of the shielding plate, so that the problem of collision between the shielding plate and the bushing during the lifting of the shielding plate is avoided, thereby ensuring the function of the components of the plasma processing device and reducing the pollutants in the reaction space of the plasma processing device. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained based on these drawings without creative labor.

[0027] Figure 1 A structural schematic diagram of a plasma processing device provided in Embodiment One of the present application;

[0028] Figure 2 A structural schematic diagram of a plasma processing device provided in Embodiment One of the present application; Figure 1 An enlarged schematic diagram of A in FIG. 1;

[0029] Figure 3 A structural schematic diagram of a plasma processing device provided in Embodiment One of the present application; Figure 1 A structural schematic diagram of a plasma processing device provided in Embodiment One of the present application when the shielding plate is in an open state;

[0030] Figure 4 A structural schematic diagram of a plasma processing device provided in Embodiment Two of the present application;

[0031] Figure 5 A structural schematic diagram of a plasma processing device provided in Embodiment Two of the present application; Figure 4 An enlarged schematic diagram of B in FIG. 2;

[0032] Figure 6 A structural schematic diagram of a plasma processing device provided in Embodiment Two of the present application when the shielding plate is in an open state. Figure 4 A structural schematic diagram of a plasma processing device provided in Embodiment Two of the present application when the shielding plate is in an open state.

[0033] Explanation of reference signs:

[0034] 10 - bushing; 101 - opening;

[0035] 102 - mating surface; 103 - fixed end;

[0036] 20 - shielding plate; 20a - first end;

[0037] 20b - second end; 201 - stop surface;

[0038] 202 - boss; 30 - driving mechanism;

[0039] 40 - conductive spiral tube; 50 - stopper;

[0040] 60 - cavity; 601 - reaction cavity;

[0041] 70 - cover; 81 - upper electrode;

[0042] 82 - lower electrode. DETAILED DESCRIPTION

[0043] The technical solutions provided by the present application will be described below with reference to the drawings.

[0044] It should be noted that the terms "first", "second" are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise explicitly specified and limited.

[0045] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "fixing" and the like should be understood in a broad sense, for example, it can be fixed connection, or detachable connection, or integrated; it can be mechanical connection, or electrical connection or communication with each other; it can be directly connected, or indirectly connected through intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0046] In the present application, unless otherwise explicitly specified and limited, the first feature is "on" or "under" the second feature, which can be direct contact between the first and second features, or indirect contact between the first and second features through intermediate medium. Moreover, the first feature "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "below", "under" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0047] In the above description, the description referring to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present specification and the features of different embodiments or examples, without contradiction.

[0048] Due to the insufficient stroke accuracy of the cylinder, and the thermal deformation, stress deformation and machining tolerance of the components of the plasma processing device, etc., the shielding plate is prone to collide with the bushing during the lifting of the shielding plate, which causes the damage of the components of the plasma processing device and the coating thereof, affects the function of the components of the plasma processing device, and also causes the increase of the pollutants in the reaction space of the plasma processing device. It should be noted that in some examples, the components of the plasma processing device can include the shielding plate, the bushing and the cavity, and when the shielding plate collides with the bushing, the shielding plate is damaged and the coating of the shielding plate is damaged, the bushing is damaged and the coating of the bushing is damaged, the cavity is damaged and the coating of the cavity is damaged, which affects the function of the shielding plate, the bushing and the cavity, and also causes the increase of the types and the amount of the pollutants.

[0049] To solve the above problems, the embodiments of the present application provide a plasma processing device and an etching equipment, a stop piece is arranged between the bushing and the shielding plate, and the stop piece is limited to the shielding plate by the driving mechanism when the shielding plate shields the opening of the bushing, so that there is a preset gap between the shielding plate and the bushing in the lifting direction of the shielding plate, the shielding plate does not contact with the bushing during the lifting of the shielding plate, so as to avoid the collision between the shielding plate and the bushing during the lifting of the shielding plate, thereby ensuring the function of the components of the plasma processing device, and reducing the pollutants in the reaction space of the plasma processing device, which can be understood as reducing the types and the amount of the pollutants.

[0050] The plasma processing device and the etching equipment provided by the embodiments of the present application will be described in detail below in combination with specific embodiments.

[0051] As shown in Figures 1 to 3 The embodiments of the present application provide a plasma processing device, which includes a bushing 10, a shielding plate 20, a driving mechanism 30 and a stop piece 50.

[0052] The sidewall of the bushing 10 has an opening 101, the shielding plate 20 is connected with the driving mechanism 30, and the driving mechanism 30 is used to control the shielding plate 20 to rise or fall along the direction perpendicular to the bottom of the plasma processing device to shield the opening 101. In this embodiment, the direction perpendicular to the bottom of the plasma processing device is the X-axis direction.

[0053] The stop piece 50 is installed between the bushing 10 and the shielding plate 20, and the stop piece 50 is configured to limit the shielding plate 20 when the shielding plate 20 shields the opening 101, so that the shielding plate 20 and the bushing 10 have a preset gap in the lifting direction of the shielding plate 20.

[0054] In some examples, the plasma processing device further comprises a cavity 60 and a cover 70, the cavity 60 and the cover 70 enclose a reaction cavity 601, the sleeve 10, the shielding plate 20 and the stopper 50 are located in the reaction cavity 601, and the driving mechanism 30 is installed on the cavity 60 or the cover 70.

[0055] The opening 101 can accommodate the wafer to enter or exit.

[0056] The shielding plate 20 is located between the sleeve 10 and the cavity 60, and the driving mechanism 30 is used to realize the displacement of the shielding plate 20 in the direction perpendicular to the bottom of the plasma processing device, that is, the driving mechanism 30 can realize the lifting of the shielding plate 20 in the direction perpendicular to the bottom of the plasma processing device. In some examples, the driving mechanism 30 can be a motor or a pneumatic cylinder.

[0057] Figure 1 The shielding plate 20 in the shielding plate 20 is shielded by rising, and at this time the shielding plate 20 is in a closed state. Figure 3 The shielding plate 20 in the shielding plate 20 is shielded by rising, and at this time the shielding plate 20 is in a closed state.

[0058] The lifting direction of the shielding plate 20 is the X-axis direction. Referring to Figure 1 The shielding plate 20 can shield the opening 101 by rising. In other embodiments, referring to Figure 4 The shielding plate 20 can also shield the opening 101 by lowering.

[0059] The profile formed by the shielding plate 20 and the sleeve 10 is not specifically set, as long as the shielding plate 20 can shield the opening 101.

[0060] The plasma processing device is applied to an etching device, the etching device comprises a transmission cavity and a vacuum valve, the cavity 60 of the plasma processing device is provided with an opening (not shown in the figure) for wafer transmission, and the vacuum valve can open or close the opening on the cavity 60. When the wafer needs to be transmitted between the reaction cavity 601 of the plasma processing device and the transmission cavity, before the vacuum valve is opened, the shielding plate 20 is controlled to rise by the driving mechanism 30, the shielding plate 20 shields the opening 101 of the sleeve 10, at this time, the shielding plate 20 is in a closed state (see Figure 1 The vacuum valve is opened, and the contaminants in the gas in the reaction cavity 601 or the transmission cavity fall on the shielding plate 20; after a preset time, the shielding plate 20 is controlled to lower by the driving mechanism 30, the opening 101 is opened, at this time, the shielding plate 20 is in an open state (see Figure 3 The shielding plate 20 no longer shields the opening 101 on the sidewall of the sleeve 10, and the wafer transmission is performed.

[0061] The preset gap is not limited to a regular shape, such as a cube, but can also be an irregular shape, as long as it is ensured that the baffle 20 does not contact the bushing 10 in the lifting direction of the baffle 20, that is, the baffle 20 does not collide with the bushing 10.

[0062] In some examples, in the direction in which the shielding plate 20 is raised or lowered, the opposing surfaces of the shielding plate 20 and the bushing 10 are two parallel planes that are perpendicular to the direction in which the shielding plate 20 is raised or lowered. The preset gap between the shielding plate 20 and the bushing 10 can be understood as the distance between the shielding plate 20 and the bushing 10 in the direction in which the shielding plate 20 is raised or lowered when the shielding plate 20 is blocking the opening 101. For example, when the shielding plate 20 is blocking the opening 101, the distance between the shielding plate 20 and the bushing 10 in the direction in which the shielding plate 20 is raised or lowered can be preset to 2 mm.

[0063] The plasma processing device provided in the embodiment of the present application controls the shielding plate 20 to shield the opening 101 of the sleeve 10 through the driving mechanism 30, and the stop member 50 limits the shielding plate 20, so that a preset gap is provided between the shielding plate 20 and the sleeve 10 in the lifting direction of the shielding plate 20, so that the shielding plate 20 does not contact the sleeve 10 during the lifting process of the shielding plate 20, avoiding the shielding plate 20 and the sleeve 10 from colliding during the lifting process of the shielding plate 20, thereby ensuring the functions of the components of the plasma processing device and reducing the pollutants in the reaction space of the plasma processing device. Specifically, the shielding plate 20 does not collide with the sleeve 10, so that the shielding plate 20 and the coating of the shielding plate 20 will not be damaged, the sleeve 10 will not be damaged, the coating of the sleeve 10 will not be damaged, the cavity 60 will not be damaged, and the coating of the cavity 60 will not be damaged, thereby ensuring the functions of the shielding plate 20, the sleeve 10 and the cavity 60, and reducing the types of pollutants and the amount of pollutants.

[0064] In one possible implementation, Figure 3 As shown, the shielding plate 20 has a stop surface 201 and the bushing 10 has a mating surface 102 . The stop surface 201 and the mating surface 102 are arranged relative to each other in the lifting direction of the shielding plate 20 . The stop member 50 is fixed on the stop surface 201 and / or the mating surface 102 .

[0065] The stopper 50 applies a force to the shielding plate 20 so as to provide a predetermined gap between the shielding plate 20 and the bushing 10 in the direction in which the shielding plate 20 is raised or lowered. Specifically, when the shielding plate 20 blocks the opening 101, the stopper 50 applies a force to the shielding plate 20, thereby limiting the position of the shielding plate 20 and maintaining a predetermined gap between the shielding plate 20 and the bushing 10 in the direction in which the shielding plate 20 is raised or lowered.

[0066] The stopper 50 is, but not limited to, a magnetic member, an elastic member, etc.

[0067] The stopper 50 can be fixed on the matching surface 102 of the bushing 10. In some examples, the stopper 50 is an elastic member, and the type of the elastic member can be selected according to actual design needs. For example, the elastic member is a gas spring or an elastic pin. The elastic member is fixed on the matching surface 102 of the bushing 10. When the shielding plate 20 shields the opening 101, the stop surface 201 of the shielding plate 20 is in contact with the elastic member, and the elastic member is compressed. The elastic member exerts an elastic force on the shielding plate 20. In other examples, the stopper 50 is a magnetic member, which can be a magnet. The stopper 50 is fixed on the matching surface 102 of the bushing 10, and the stop surface 201 of the shielding plate 20 is a magnetic surface. The force exerted by the stopper 50 on the stop surface 201 of the shielding plate 20 is a repulsive force. When the shielding plate 20 shields the opening 101, the stopper 50 exerts a repulsive force on the shielding plate 20.

[0068] The stopper 50 can be fixed on the stop surface 201 of the shielding plate 20. In some examples, the stopper 50 is an elastic member, and the elastic member is fixed on the stop surface 201 of the shielding plate 20. When the shielding plate 20 shields the opening 101, the matching surface 102 of the bushing 10 is in contact with the elastic member, and the elastic member is compressed. The elastic member exerts an elastic force on the shielding plate 20.

[0069] The stopper 50 can also be fixed on the stop surface 201 of the shielding plate 20 and the matching surface 102 of the bushing 10. The stopper 50 can be composed of two separable parts, and the two parts are fixed on the stop surface 201 of the shielding plate 20 and the matching surface 102 of the bushing 10, respectively. In some examples, the stopper 50 is a magnetic member, which includes two magnets. One magnet is fixed on the stop surface 201 of the shielding plate 20, and the other magnet is fixed on the matching surface 102 of the bushing 10. The force between the two magnets is a repulsive force. When the shielding plate 20 shields the opening 101, the shielding plate 20 is subjected to the force between the two magnets.

[0070] In a possible implementation, as shown in Figure 3 The shielding plate 20 has a first end 20a and a second end 20b, which are oppositely arranged in the lifting direction of the shielding plate 20. The first end 20a is connected with the driving mechanism 30. The bushing 10 has a fixed end 103 (see Figure 2 The fixed end 103 is oppositely arranged with the second end 20b in the lifting direction of the shielding plate 20, and the fixed end 103 is provided with a fixed surface.

[0071] The driving mechanism 30 can control the shielding plate 20 to rise or fall by driving the first end 20a of the shielding plate 20.

[0072] The gap between the second end 20b and the fixed surface is a preset gap when the shielding plate 20 shields the opening 101. In this way, the second end 20b of the shielding plate 20 does not contact the fixed end 103 of the liner 10 during the lifting of the shielding plate 20, avoiding the collision between the second end 20b of the shielding plate 20 and the fixed end 103 of the liner 10 during the lifting of the shielding plate 20, thereby ensuring the function of the components of the plasma processing device and reducing the contamination in the reaction space of the plasma processing device.

[0073] The end surface of the second end 20b can be, but is not limited to, a plane, a curved surface, a bent surface, etc.

[0074] The shape of the end surface of the fixed end 103 is the same as that of the end surface of the second end 20b, so that the end surface of the fixed end 103 matches the end surface of the second end 20b. Exemplarily, the end surface of the fixed end 103 and the end surface of the second end 20b are both planes.

[0075] The fixed surface is part of the end surface of the fixed end 103.

[0076] Exemplarily, the plasma processing device further comprises an upper electrode 81 and a lower electrode 82, which are oppositely arranged in the X-axis direction. The reaction gas in the reaction chamber 601 is excited into plasma under the action of the upper electrode 81 and the lower electrode 82.

[0077] In one possible implementation, the plasma processing device further comprises a conductive spiral tube 40, which is arranged between the shielding plate 20 and the liner 10. The conductive spiral tube 40 is located in the reaction chamber 601. When the shielding plate 20 shields the opening 101, the stopper 50 limits the shielding plate 20, so that the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the liner 10 in the lifting direction of the shielding plate 20 is a preset compression amount. In this way, the electrical continuity between the shielding plate 20 and the liner 10 can be ensured when the shielding plate 20 shields the opening 101.

[0078] Optionally, the conductive spiral tube 40 can be arranged between the fixed end 103 and the second end 20b to maintain the electrical continuity between the shielding plate 20 and the liner 10. The conductive spiral tube 40 can be fixed with the fixed surface of the fixed end 103 or the second end 20b.

[0079] The conductive spiral tube 40 can also be arranged between the stop surface 201 and the matching surface 102 to maintain the electrical continuity between the shielding plate 20 and the liner 10. The conductive spiral tube 40 can be fixed with the stop surface 201 or the matching surface 102.

[0080] Optionally, the conductive spiral tube 40 is fixed on the liner 10. In some examples, the conductive spiral tube 40 is embedded on the liner 10. When the conductive spiral tube 40 is in contact with the shielding plate 20, the shielding plate 20 and the liner 10 can be electrically connected.

[0081] When the shielding plate 20 shields the opening 101, the compression amount of the conductive spiral tube 40 between the shielding plate 20 and the liner 10 can be preset, and the compression amount is set to be able to maintain the electrical continuity between the shielding plate 20 and the liner 10.

[0082] The compression amount of the conductive spiral tube 40 between the shielding plate 20 and the liner 10 can be understood as the difference between the length of the conductive spiral tube 40 before compression and the length of the conductive spiral tube 40 after compression in the lifting direction of the shielding plate 20. In some examples, the preset compression amount of the conductive spiral tube 40 between the shielding plate 20 and the liner 10 is 1 mm.

[0083] In one example, when the shielding plate 20 shields the opening 101, the conductive spiral tube 40 conducts the shielding plate 20 and the liner 10, and the conductive spiral tube 40 shields the preset gap so that the projection of the conductive spiral tube 40 on the opening 101 covers part of the opening 101, thereby forming a closed space between the liner 10 and the shielding plate 20, the upper electrode 81 and the lower electrode 82, so that the plasma in the reaction chamber 601 remains uniform.

[0084] In one possible implementation, as shown in Figures 1 to 3 , the driving mechanism 30 is located at the bottom of the cavity 60, the driving mechanism 30 is installed on the cavity 60, and the driving mechanism 30 is connected below the shielding plate 20.

[0085] The driving mechanism 30 can be a pneumatic cylinder connected below the shielding plate 20. The pneumatic cylinder drives the shielding plate 20 to move between a first height and a second height, wherein the first height is greater than the second height.

[0086] In one example, as shown in Figure 1 , the height of the shielding plate 20 relative to the bottom of the cavity 60 in the X-axis direction is the first height; and Figure 3 , the height of the shielding plate 20 relative to the bottom of the cavity 60 in the X-axis direction is the second height.

[0087] As shown in Figure 1 , the shielding plate 20 moves towards the top of the cavity 60, that is, the shielding plate 20 rises upwards along the +X-axis direction, and the shielding plate 20 moves to the first height to shield the opening 101, so that the shielding plate 20 is in a closed state; and Figure 3As shown, the shielding plate 20 moves towards the bottom of the cavity 60, that is, the shielding plate 20 descends along the -X axis direction, and the shielding plate 20 moves to the second height to open the opening 101, so that the shielding plate 20 is in the open state.

[0088] As shown in FIG. 1, the shielding plate 20 is in the closed state, that is, the shielding plate 20 is located at the first height, and the opening 101 is closed. Figure 3 As shown, the first end 20a of the shielding plate 20 is provided with a boss 202, and the stop surface 201 is arranged on the boss 202. The matching surface 102 of the liner 10 is arranged at the bottom of the liner 10.

[0089] In some examples, the driving mechanism 30 is a cylinder. As shown in FIG. 2, the cylinder is provided with a piston rod 300, and the piston rod 300 is connected to the shielding plate 20. Figure 1 Figure 2 As shown, when the shielding plate 20 shields the opening 101, that is, when the shielding plate 20 is located at the first height, the sum of the elastic force of the conductive coil 40, the force of the stop piece 50 on the shielding plate 20, the gravity of the piston rod of the cylinder, and the gravity of the shielding plate 20 is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure. In this way, the conductive coil 40, the stop piece 50, the shielding plate 20 and the cylinder can be balanced, the compression amount of the conductive coil 40 can be ensured, the conductive coil 40 can be stabilized, and the gap between the shielding plate 20 and the liner 10 can be ensured, so that the shielding plate 20 and the liner 10 do not contact in the lifting direction of the shielding plate 20 and are stable.

[0090] It should be noted that one standard atmospheric pressure in the present application refers to one standard atmospheric pressure of the environment of the etching device.

[0091] For example, the stop piece 50 is an elastic piece. As shown in FIG. 3, the elastic piece is provided with a spring 500. Figure 1 Figure 2 As shown, when the shielding plate 20 shields the opening 101, that is, when the shielding plate 20 is located at the first height, the sum of the elastic force of the conductive coil 40, the elastic force of the stop piece 50 on the shielding plate 20, the gravity of the piston rod of the cylinder, and the gravity of the shielding plate 20 is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure.

[0092] It should be noted that when the compression amount of the conductive coil 40 between the shielding plate 20 and the liner 10 is the preset compression amount, the elastic force of the conductive coil 40 corresponding to different elastic coefficients of the conductive coil 40 is also different. The thrust of the cylinder corresponding to different cylinder diameters of the cylinder is also different.

[0093] ​​When the elastic coefficient of the conductive spiral tube 40 changes and the cylinder diameter of the cylinder changes, by adjusting the elastic coefficient of the stop piece 50, the elastic force of the stop piece 50 on the shielding plate 20 is controlled, the compression amount of the conductive spiral tube 40 is constrained, and the gap between the shielding plate 20 and the liner 10 is controlled, so that the gap between the shielding plate 20 and the liner 10 is the preset gap, and the compression amount of the conductive spiral tube 40 is the preset compression amount. It can be understood that the stop piece 50 with different elastic coefficients can be matched with the conductive spiral tube 40 with different elastic coefficients and the cylinder with different cylinder diameters. The selection of the elastic coefficient of the stop piece 50 can be determined according to the size of the elastic coefficient of the conductive spiral tube 40 and the size of the cylinder diameter of the cylinder.

[0094] Exemplarily, when the elastic coefficient of the conductive spiral tube 40 increases and the cylinder diameter of the cylinder increases, the elastic coefficient of the stop piece 50 also increases to control the elastic force of the stop piece 50 on the shielding plate 20, constrain the compression amount of the conductive spiral tube 40, and control the gap between the shielding plate 20 and the liner 10.

[0095] When the preset compression amount changes and the preset gap changes, by adjusting the elastic coefficient of the stop piece 50, the elastic force of the stop piece 50 on the shielding plate 20 is controlled, the compression amount of the conductive spiral tube 40 is adjusted, and the gap between the shielding plate 20 and the liner 10 is adjusted, so that the gap between the shielding plate 20 and the liner 10 is the changed preset gap and the compression amount of the conductive spiral tube 40 is the changed preset compression amount. It can be understood that the stop piece 50 with different elastic coefficients can correspond to different preset compression amounts and different preset gaps, so that the stop piece 50 is flexible and adjustable, and the applicability to different application scenarios is enhanced.

[0096] Figure 4 The shielding plate 20 in the shielding state is lowered to shield the opening 101. At this time, the shielding plate 20 is in the closed state. Figure 6 The shielding plate 20 in the shielding state is lowered to shield the opening 101. At this time, the shielding plate 20 is in the closed state.

[0097] In a possible implementation, as shown in Figures 4 to 6 The driving mechanism 30 is located at the top of the cavity 60, the driving mechanism 30 is installed on the cover 70, and the driving mechanism 30 is connected above the shielding plate 20.

[0098] The driving mechanism 30 can be a cylinder connected above the shielding plate 20. The cylinder drives the shielding plate 20, so that the shielding plate 20 can move between the first height position and the second height position, wherein the first height is greater than the second height.

[0099] Exemplarily, in Figure 4In some examples, the height of the shielding plate 20 relative to the bottom of the cavity 60 in the X-axis direction is a second height. Figure 6 In some examples, the height of the shielding plate 20 relative to the bottom of the cavity 60 in the X-axis direction is a first height.

[0100] As shown in FIG. 1, the shielding plate 20 moves towards the bottom of the cavity 60, i.e., the shielding plate 20 moves downwards along the -X-axis direction, and the shielding plate 20 moves to the second height to shield the opening 101, so that the shielding plate 20 is in the closed state. Figure 4 As shown in FIG. 1, the shielding plate 20 moves towards the top of the cavity 60, i.e., the shielding plate 20 moves upwards along the +X-axis direction, and the shielding plate 20 moves to the first height to open the opening 101, so that the shielding plate 20 is in the open state. Figure 6 As shown in FIG. 1, the shielding plate 20 moves towards the top of the cavity 60, i.e., the shielding plate 20 moves upwards along the +X-axis direction, and the shielding plate 20 moves to the first height to open the opening 101, so that the shielding plate 20 is in the open state.

[0101] As shown in FIG. 1, the stop surface 201 is part of the end surface of the second end 20b. Figure 6 As shown in FIG. 1, the fitting surface 102 of the bushing 10 is part of the end surface of the fixed end 103, and the fixed surface and the fitting surface 102 are located on the opening 101. In the lifting direction of the shielding plate 20, the fitting surface 102 is higher than the fixed surface.

[0102] Figure 6 As shown in FIG. 1, the fitting surface 102 of the bushing 10 is part of the end surface of the fixed end 103, and the fixed surface and the fitting surface 102 are located on the opening 101. In the lifting direction of the shielding plate 20, the fitting surface 102 is higher than the fixed surface.

[0103] As shown in FIG. 1, when the shielding plate 20 shields the opening 101, i.e., when the shielding plate 20 is at the second height, the sum of the elastic force of the conductive coil 40 and the elastic force of the stop piece 50 on the shielding plate 20 is equal to the sum of the thrust of the air cylinder, one standard atmospheric pressure, the gravity of the piston rod of the air cylinder, and the gravity of the shielding plate 20. In this way, the forces on the conductive coil 40, the stop piece 50, the shielding plate 20, and the air cylinder are balanced, the compression amount of the conductive coil 40 is ensured, the conductive coil 40 is stable, and the gap between the shielding plate 20 and the bushing 10 is ensured, so that the shielding plate 20 and the bushing 10 do not contact in the lifting direction of the shielding plate 20 and remain stable. Figure 4 Figure 5 As shown in FIG. 1, when the shielding plate 20 shields the opening 101, i.e., when the shielding plate 20 is at the second height, the sum of the elastic force of the conductive coil 40 and the elastic force of the stop piece 50 on the shielding plate 20 is equal to the sum of the thrust of the air cylinder, one standard atmospheric pressure, the gravity of the piston rod of the air cylinder, and the gravity of the shielding plate 20. In this way, the forces on the conductive coil 40, the stop piece 50, the shielding plate 20, and the air cylinder are balanced, the compression amount of the conductive coil 40 is ensured, the conductive coil 40 is stable, and the gap between the shielding plate 20 and the bushing 10 is ensured, so that the shielding plate 20 and the bushing 10 do not contact in the lifting direction of the shielding plate 20 and remain stable.

[0104] In some examples, the stop piece 50 is an elastic piece. As shown in FIG. 1, when the shielding plate 20 shields the opening 101, i.e., when the shielding plate 20 is at the second height, the sum of the elastic force of the conductive coil 40 and the elastic force of the stop piece 50 on the shielding plate 20 is equal to the sum of the thrust of the air cylinder, one standard atmospheric pressure, the gravity of the piston rod of the air cylinder, and the gravity of the shielding plate 20. Figure 4 Figure 5 In some examples, the stop piece 50 is an elastic piece. As shown in FIG. 1, when the shielding plate 20 shields the opening 101, i.e., when the shielding plate 20 is at the second height, the sum of the elastic force of the conductive coil 40 and the elastic force of the stop piece 50 on the shielding plate 20 is equal to the sum of the thrust of the air cylinder, one standard atmospheric pressure, the gravity of the piston rod of the air cylinder, and the gravity of the shielding plate 20.

[0105] When the compression amount of the conductive coil 40 between the shielding plate 20 and the bushing 10 is the preset compression amount, the elastic force of the conductive coil 40 corresponding to different elastic coefficients of the conductive coil 40 is also different.​​​

[0106] The different cylinder diameters correspond to different cylinder thrusts.

[0107] When the elastic coefficient of the conductive spiral tube 40 changes and the cylinder diameter of the cylinder changes, by adjusting the elastic coefficient of the stop piece 50, the elastic force of the stop piece 50 on the shielding plate 20 is controlled, the compression amount of the conductive spiral tube 40 is constrained, and the gap between the shielding plate 20 and the bushing 10 is adjusted, so that the gap between the shielding plate 20 and the bushing 10 is the preset gap and the compression amount of the conductive spiral tube 40 is the preset compression amount. It can be understood that the stop piece 50 with different elastic coefficients can adapt to the conductive spiral tube 40 with different elastic coefficients and the cylinder with different cylinder diameters.

[0108] When the preset compression amount changes and the preset gap changes, by adjusting the elastic coefficient of the stop piece 50, the elastic force of the stop piece 50 on the shielding plate 20 is controlled, the compression amount of the conductive spiral tube 40 is adjusted, and the gap between the shielding plate 20 and the bushing 10 is adjusted, so that the gap between the shielding plate 20 and the bushing 10 is the changed preset gap and the compression amount of the conductive spiral tube 40 is the changed preset compression amount. It can be understood that the stop piece 50 with different elastic coefficients can correspond to different preset compression amounts and different preset gaps, thereby making the stop piece 50 flexible and adjustable, and enhancing the applicability to different application scenarios.

[0109] The embodiment of the present application provides an etching device, which comprises a transmission cavity and a plasma processing device; the plasma processing device and the transmission cavity can transmit a wafer.

[0110] In the embodiment, the plasma processing device has the same structure as the plasma processing device provided in any of the above embodiments and can bring the same or similar technical effects, which will not be described again in detail, and the specific description can be referred to the description of the above embodiments.

[0111] The etching device can be used not only for various conductor etching processes, such as shallow trench isolation etching and polysilicon gate etching, but also for medium etching, such as gap wall etching, mask etching and back etching.

[0112] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that: they can still modify the technical solutions recorded in the above embodiments, or make equivalent replacement for part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A plasma processing device, characterized in that It includes a bushing, a shielding plate, a driving mechanism and a stopper; The side wall of the liner has an opening, and the shielding plate is connected to the driving mechanism, and the driving mechanism is used to control the shielding plate to rise or fall along a direction perpendicular to the bottom of the plasma processing device to shield the opening; The stopper is installed between the bushing and the shielding plate, and the stopper is configured to limit the shielding plate when the shielding plate blocks the opening, so that a preset gap exists between the shielding plate and the bushing in the lifting direction of the shielding plate; The shielding plate has a stop surface, and the bushing has a matching surface. The stop surface and the matching surface are arranged opposite to each other in the lifting direction of the shielding plate, and the stop member is fixed to the stop surface and / or the matching surface. The shielding plate has a first end and a second end, the first end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, the first end is connected to the driving mechanism, the bushing has a fixed end, the fixed end and the second end are arranged opposite to each other in the lifting direction of the shielding plate, and the fixed end is provided with a fixing surface; When the shielding plate shields the opening, the gap between the second end and the fixing surface is the preset gap.

2. The plasma processing apparatus according to claim 1, wherein The stop member is a magnetic member or an elastic member.

3. The plasma processing apparatus according to claim 1, wherein A conductive spiral tube is fixed on the fixing surface of the bushing or the second end of the shielding plate. When the shielding plate blocks the opening, the compression amount of the conductive spiral tube between the shielding plate and the bushing is a preset compression amount, and the conductive spiral tube blocks the preset gap.

4. The plasma processing device according to any one of claims 1 to 3, characterized in that: It also includes a cavity and a cover, the cavity and the cover form a reaction chamber, the bushing, the shielding plate and the stopper are located in the reaction chamber, and the driving mechanism is installed on the cavity or the cover.

5. The plasma processing apparatus according to claim 4, wherein: The driving mechanism is mounted on the cavity and is located at the bottom of the cavity. The driving mechanism is connected below the shielding plate. The shielding plate moves toward the top of the cavity to shield the opening. or The driving mechanism is installed on the cover, the cover is located at the top of the cavity, the driving mechanism is connected above the shielding plate, and the shielding plate moves toward the bottom of the cavity to shield the opening.

6. The plasma processing apparatus according to claim 5, wherein: The driving mechanism is a motor or a cylinder.

7. The plasma processing apparatus according to claim 6, wherein: The driving mechanism is a cylinder; Wherein, when the cylinder is connected to the bottom of the shielding plate, the sum of the elastic force of the conductive spiral tube, the force of the stopper on the shielding plate, the gravity of the piston rod of the cylinder and the gravity of the shielding plate is equal to the sum of the thrust of the cylinder and one standard atmospheric pressure; or, When the cylinder is connected above the shielding plate, the sum of the elastic force of the conductive spiral tube and the force of the stop member on the shielding plate is equal to the sum of the thrust of the cylinder, one standard atmospheric pressure, the gravity of the piston rod of the cylinder and the gravity of the shielding plate.

8. An etching device, characterized in that: comprising a transmission chamber and a plasma processing apparatus according to any one of claims 1 to 7; Wafers are transferred between the plasma processing device and the transfer chamber.

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