Process chamber and semiconductor device

Abstract

The embodiment of the invention provides a process chamber and semiconductor equipment, the semiconductor equipment comprises the process chamber, and the process chamber comprises a chamber body, an air pump and a pressure control valve; a first through hole is formed in the center of the bottom of the cavity; the air pump is arranged outside the cavity and is communicated with the first through hole; the pressure control valve comprises a valve plate and at least one driving assembly, the valve plate is arranged in the cavity and right faces the first through hole, the at least one driving assembly penetrates through the cavity to be connected with the valve plate, and the valve plate can move in the vertical direction of the cavity to be away from or close to the first through hole under driving of the at least one driving assembly. According to the embodiment of the invention, the air pump, the pressure control valve and other flow field adjusting assemblies are arranged in the process chamber, so that the process chamber has good flow field symmetry, and the etching non-uniformity of the semiconductor equipment on the wafer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor equipment, and in particular to a process chamber and semiconductor equipment. Background Art

[0002] In the field of precision manufacturing such as semiconductors and photovoltaics, dynamic pressure control of the process chamber is a core factor affecting plasma uniformity and process stability. Existing technologies generally use eccentrically moving swing valves to achieve pressure regulation, and change the cross-sectional area of ​​the airflow channel by the swing angle of the valve plate. However, the lateral deflection of the eccentric swing valve will form an asymmetric vortex at the bottom of the chamber, resulting in uneven plasma distribution, thereby affecting the uniformity of etching. Summary of the invention

[0003] An embodiment of the present application provides a process chamber and a semiconductor device. By arranging flow field regulating components such as an air pump and a pressure control valve in the process equipment, the process chamber has good flow field symmetry, thereby improving the non-uniformity of wafer etching by the semiconductor device including the process chamber.

[0004] In the first aspect, an embodiment of the present application proposes a process chamber, comprising a cavity, an air pump and a pressure control valve; a first through hole is provided at the bottom center of the cavity; the air pump is arranged outside the cavity and connected to the first through hole; the pressure control valve comprises a valve plate and at least one driving component, the valve plate is arranged in the cavity and facing the first through hole, these driving components pass through the cavity and are connected to the valve plate, and under the drive of the driving component, the valve plate can move along the vertical direction of the cavity to move away from or close to the first through hole.

[0005] In the embodiment of the present application, a first through hole is set at the bottom center of the cavity, the air pump is connected to the first through hole and the valve plate is opposite to the first through hole, that is, the center line of the valve plate and the center line of the cavity can coincide or basically coincide. When the air pump extracts the process gas in the cavity, the process gas can flow symmetrically from both sides of the cavity to the center of the bottom wall, and a relatively symmetrical flow field can be formed in the cavity, thereby improving the uniformity of plasma distribution and the uniformity of etching.

[0006] In an implementation of the first aspect, at least one second through hole is provided on the chamber, at least one driving assembly is one, at least one second through hole is one, the driving assembly passes through the second through hole and is connected to the valve plate, and the driving assembly is used to drive the valve plate away from or close to the first through hole. When the number of the driving assembly and the second through hole is one, while driving the valve plate away from or close to the first through hole, the structure of the driving assembly and the chamber is simplified, the cost is reduced, and the potential failure points of the process chamber are reduced.

[0007] Or, at least one driving assembly includes multiple, each driving assembly has a corresponding second through hole on the cavity, at least one second through hole is multiple, each second through hole corresponds to the position of each driving assembly, each driving assembly is arranged side by side and spaced apart, each driving assembly passes through each second through hole to connect with the valve plate, and each driving assembly is used to drive the valve plate away from or close to the first through hole. When the number of driving assemblies and second through holes is multiple, multiple driving assemblies act on the valve plate together, which not only improves the smoothness of the movement of the valve plate, but also increases the flexibility of controlling the valve plate. Even if a driving assembly fails, other driving assemblies can continue to work, ensuring the reliability and continuity of the system.

[0008] Or, at least one driving assembly includes multiple, at least one driving assembly includes a first driving assembly and multiple second driving assemblies, the multiple second driving assemblies are arranged side by side, the first driving assembly connects the multiple second driving assemblies, the first driving assembly or / and the multiple second driving assemblies pass through the cavity wall of the cavity and are connected to the valve plate, the first driving assembly is used to drive the multiple second driving assemblies to move, and the multiple second driving assemblies are used to drive the valve plate away from or close to the first through hole. When the driving assembly includes a first driving assembly and at least one second driving assembly, and the number of the second through holes is multiple, the first driving assembly is responsible for driving the second driving assembly to move as the main driving source, while the second driving assembly is directly connected to and drives the valve plate. The design of the hierarchical drive of the first driving assembly and the second driving assembly makes the driving force transmission more efficient, reduces energy loss, and improves the response speed and driving efficiency of the entire driving system. All of the above are conducive to forming a relatively symmetrical gas flow field in the cavity, thereby ensuring the uniformity of the process chamber's circumferential etching of the wafer.

[0009] In one embodiment of the first aspect, an annular seal is provided on the side of the valve plate facing the first through hole, and the annular seal forms a matching contact surface with the edge of the first through hole. The annular seal can form a sealing cooperation with the edge of the first through hole to seal the first through hole. When the valve plate moves in a vertical direction and completely covers the first through hole, the annular seal is compressed and deformed to seal the cavity to ensure the airtightness of the cavity, which is conducive to forming a relatively symmetrical gas flow field in the cavity, thereby ensuring the circumferential etching uniformity of the process chamber on the wafer.

[0010] In one embodiment of the first aspect, the process chamber further comprises a lower electrode, a feeding device and a reflow disk, the feeding device passes through the side wall of the cavity and is connected to the lower electrode for feeding the lower electrode, the reflow disk is located below the lower electrode for providing a reflow path for the RF signal, and at least one third through hole is provided on the reflow disk, and these third through holes are located in the semi-circular disk area of ​​the reflow disk close to the feeding device. Since the RF is fed into the cavity from the side of the process chamber, the current density on the feeding side in the process chamber is relatively large, and the RF current distribution in the cavity is uneven; by setting the third through hole in the semi-circular disk area close to the feeding side of the reflow disk, the RF current on the reflow disk does not flow through the area where the third through hole is located, thereby changing the RF distribution on the reflow disk, and then compensating for the intrinsic asymmetry of the RF brought by the side feeding of the RF current, improving the RF reflow symmetry of the cavity, and being beneficial to improving the circumferential etching effect of the process chamber on the wafer.

[0011] In one embodiment of the first aspect, the reflux disk includes a main body and a base, both of which are rotating bodies, the axis of the main body coincides with the axis of the base, and the projection of the base along the axis falls within the boundary of the main body. By arranging the main body and the base in the reflux disk of the reflux device, the transmission characteristics of the RF reflux can be matched, so that the RF reflux can be gathered from the periphery of the main body to the center of the main body and continue to be transmitted along the base (this can be called the "closing" of the RF reflux), which is beneficial to improving the symmetry of the RF reflux.

[0012] In one embodiment of the first aspect, the shape of the third through hole is one or more of annular, circular, and strip-shaped. The third through hole of regular shape can optimize the transmission path of the RF signal, thereby offsetting the non-uniformity in the RF signal transmission process to a certain extent, further improving the symmetry of the RF reflux in the process chamber, and facilitating improving the circumferential etching effect of the process chamber on the wafer.

[0013] In one embodiment of the first aspect, the main body is provided with a plurality of third through holes, and the plurality of third through holes are respectively distributed on different radial lines of the main body. This can compensate for the asymmetry of the RF intrinsic brought about by the RF current side feeding, improve the RF reflux symmetry of the cavity, and help improve the etching effect of the process equipment. In addition, the maintainability of the lower electrode cable and the water pipe can also be improved.

[0014] In one embodiment of the first aspect, an opening for the substrate to enter and exit is provided on the cavity, and a groove is provided on the inner wall of the cavity opposite to the opening. By providing the groove opposite to the opening on the inner wall of the cavity, the vacuum volume of the area corresponding to the inner wall provided with the groove is increased to balance the gas flow rate on both sides of the cavity, to compensate for the asymmetry of the flow field caused by the opening, which is conducive to forming a symmetrical flow field in the cavity and improving the circumferential etching effect of the process chamber on the wafer.

[0015] In one embodiment of the first aspect, the shape of the groove is at least one of a goggle shape, a rectangle, and a trapezoid, so as to adapt to the structural layout in the process chamber, so that the groove can compensate for the flow field asymmetry caused by the opening while ensuring a reasonable spatial layout of the process chamber.

[0016] In one embodiment of the first aspect, the process chamber further comprises a conductive liner, which is located in the process chamber and is used to enclose a process area with the lower electrode; the conductive liner is provided with a plurality of through-hole groups, each through-hole group comprises at least one fourth through-hole, and the plurality of through-hole groups are evenly distributed around the center line of the conductive liner. The through-hole groups can be used for process gas to pass through, and by providing a plurality of symmetrically distributed through-hole groups at the bottom of the conductive liner, a sufficiently high gas flow conductance can be formed when the gas pump evacuates the chamber, which is conducive to the etching process.

[0017] In one embodiment of the first aspect, each through-hole group includes a plurality of fourth through-holes distributed on the same radial line of the conductive liner; along the direction from the outer side of the conductive liner to the inner side of the conductive liner, the through-hole area of ​​the fourth through-holes in each through-hole group is decreasing. A gas extraction port may be provided at the bottom of the conductive liner, and the closer the plasma in the process area is to the gas extraction port, the easier it is to escape. By making the width of the through-hole group close to the gas extraction port smaller, the conductive liner can effectively confine the plasma and reduce the amount of plasma leaking from the through-hole group. By making the width of the through-hole group far away from the gas extraction port larger, the bottom of the conductive liner can have a sufficiently large exhaust area to form a sufficiently high gas flow conductance when the gas pump evacuates the cavity, which is beneficial to the etching process; since the plasma far away from the gas extraction port is not easy to escape, increasing the width of the through-hole group far away from the gas extraction port will not cause too much plasma to leak from the through-hole group, which is beneficial to forming a more symmetrical gas flow field in the cavity, thereby ensuring the uniformity of the process chamber etching the wafer in the annular direction.

[0018] In one embodiment of the first aspect, each through-hole group includes a plurality of sub-groups, each sub-group includes a plurality of fourth through-holes distributed on the same radial line of the conductive liner, and the plurality of sub-groups are respectively distributed on different radial lines of the conductive liner. Part of the conductive liner area between the plurality of fourth through-holes on the same radial line can reduce the amount of plasma leakage from the through-hole group, that is, the plurality of fourth through-holes distributed at intervals can effectively confine the plasma while ensuring the exhaust area. The plurality of sub-groups respectively distributed on different radial lines can cover more areas of the conductive liner, which is beneficial to ensuring the uniformity of the circumferential exhaust of the process area, while taking into account limiting the leakage of plasma in the entire process area, thereby improving the circumferential etching non-uniformity of the process chamber on the wafer.

[0019] In one embodiment of the first aspect, each through hole group includes a plurality of fourth through holes respectively distributed on different diameter lines of the conductive liner; and the diameter of each fourth through hole tends to decrease along the direction from the outside of the conductive liner to the inside of the conductive liner. This can ensure that the conductive liner effectively confines the plasma, and can also form a sufficiently large exhaust area at the bottom of the conductive liner to form a sufficiently high gas flow conductance when the gas pump evacuates the cavity, which is conducive to forming a relatively symmetrical gas flow field in the cavity, thereby ensuring the uniformity of the process chamber's circumferential etching of the wafer.

[0020] In one embodiment of the first aspect, the conductive liner is fixed relative to the process chamber, and the lower electrode and the reflux plate of the reflux device are used to move relative to the process chamber. By arranging a conductive liner without a transfer opening in the process chamber, the RF reflux symmetry of the process area, i.e., the discharge area, can be ensured, which is conducive to improving the etching uniformity of the process equipment.

[0021] On the second aspect, an embodiment of the present application proposes a semiconductor device, including any one of the above-mentioned process chambers. Since the process chamber has good flow field symmetry, the etching non-uniformity of the semiconductor device on the wafer is improved, which is conducive to obtaining good etching process effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic structural diagram of a semiconductor device according to an embodiment of the present application; Figure 2 is a schematic structural diagram of a process chamber in an embodiment of the present application; Figure 3 is a schematic diagram of the matching structure of the flow field adjustment component and the bottom wall of an embodiment of the present application; Figure 4 is a structural schematic diagram of a pressure control valve provided in an embodiment of the present application; Figure 5 is a schematic structural diagram of another pressure control valve provided in an embodiment of the present application; Figure 6 is a schematic structural diagram of another pressure control valve provided in an embodiment of the present application; Figure 7 is a structural schematic diagram of a first side wall provided in an embodiment of the present application; Figure 8 is a schematic structural diagram of another first side wall provided in an embodiment of the present application; Fig. 9 is a schematic structural diagram of another first side wall provided in an embodiment of the present application; Fig.10 It is a schematic diagram of the structure of a conductive lining provided in an embodiment of the present application; Fig.11is a top view of a conductive lining provided in an embodiment of the present application; Fig.12 is a top view of another conductive lining provided in an embodiment of the present application; Fig.13 is a top view of another conductive lining provided in an embodiment of the present application; Fig.14 is a top view of another conductive lining provided in an embodiment of the present application; Fig.15 It is a structural schematic diagram of a reflux tray provided in an embodiment of the present application; Fig.16 is a schematic diagram of the structure of another reflux tray provided in an embodiment of the present application; Fig.17 It is a schematic diagram of the structure of another reflux tray provided in an embodiment of the present application.

[0023] Description of reference numerals: 1000-Semiconductor equipment; 100-process chamber; 1- cavity; 10- cavity wall; 12- side wall; 121- first side wall; 122- second side wall; 123- opening; 124- motor; 125- groove; 13- bottom wall; 131- first through hole; 132- second through hole; 14- accommodating cavity; 15- conductive lining; 151- exhaust port; 152- through hole group; 1521- first end; 1522- second end; 1523- fourth through hole; 1524- subgroup; 16- upper shell; 17- process area; 2- feeding device; 21- Feeding source; 22-matching device; 23-RF feeding element; 24-grounding part; 3-flow field regulating assembly; 31-air pump; 32-pressure control valve; 321-driving assembly; 3211-first driving assembly; 3212-second driving assembly; 322-valve plate; 3221-annular sealing member; 4-reflux plate; 41-main body; 42-base; 43-third through hole; 44-fifth through hole; 5-lower electrode; 51-base; 511-first surface; 512-second surface; 513-electrode structure; 200-gas source. DETAILED DESCRIPTION

[0024] There are many types of semiconductor equipment. Semiconductor equipment used for etching processes, such as reactive ion etcher (RIE) and inductively coupled plasma etcher (ICP), is one of the key equipment in precision manufacturing fields such as semiconductors and photovoltaics. The semiconductor equipment needs to be connected to an external gas source to receive process gas. After the process gas enters the semiconductor equipment, it will be ionized to generate plasma. The plasma can bombard the object to be processed in the reaction chamber, such as a wafer, to selectively remove materials on the wafer to form the required circuit structure.

[0025] The dynamic pressure control of the process chamber of the semiconductor equipment is the core factor affecting the plasma uniformity and process stability. The existing technology generally uses an eccentrically moving swing valve to achieve pressure regulation, and changes the cross-sectional area of ​​the air flow channel by the swing angle of the valve plate. However, the lateral deflection movement of the eccentric swing valve will form an asymmetric vortex at the bottom of the chamber, resulting in uneven distribution of plasma in the reaction chamber, thereby affecting the uniformity of etching.

[0026] The present application provides a semiconductor device, which may include a process chamber. By setting a flow field adjustment component in the process chamber, the process chamber has good flow field symmetry, improves the uniformity of plasma distribution, and improves the uniformity of etching. The following describes possible implementations of the present application in conjunction with the accompanying drawings.

[0027] Figure 1 is a schematic diagram of the structure of the semiconductor device 1000 according to an embodiment of the present application, see Figure 1 The semiconductor device 1000 may include a process chamber 100 and a gas source 200, etc. The gas source 200 may be connected to a receiving chamber 14 (or a reaction chamber) of the process chamber 100. The gas source 200 may deliver process gas to the receiving chamber 14. The embodiment of the present application does not limit the structure and connection position of the gas source 200. Figure 1 The illustration is merely an illustration.

[0028] Figure 2 is a schematic diagram of the structure of the process chamber 100 of the embodiment of the present application, see Figure 2 The process chamber 100 may include a chamber 1, a power feeding device 2, a flow field regulating component 3, a reflux plate 4, and a lower electrode 5. The power feeding device 2 may be disposed outside the chamber 1, the lower electrode 5 and the reflux plate 4 may be disposed inside the chamber 1, a portion of the flow field regulating component 3 may be located inside the chamber 1, and another portion may be exposed outside the chamber 1.

[0029] like Figure 2As shown, the lower electrode 5 may include a base 51 and an electrode structure 513. The base 51 may include a first surface 511 and a second surface 512 opposite to each other, the first surface 511 may be used to carry a wafer, and at least part of the electrode structure 513 may be arranged around the second surface 512. The electrode structure 513 may include a ground loop, and the ground loop may be electrically connected to the feeding device 2 outside the cavity 1.

[0030] like Figure 2 As shown, the cavity wall 10 of the cavity 1 may include a side wall 12 and a bottom wall 13, and the side wall 12 and the bottom wall 13 may be involved in forming a receiving cavity 14, and the receiving cavity 14 may be used to receive process gas after reaching a certain vacuum degree. Schematically, the receiving cavity 14 may be a symmetrical structure, such as a centrally symmetrical cylindrical shape, and its center line may be defined. The base 51 and the electrode structure 513 may all be located in the receiving cavity 14.

[0031] Figure 3 is a schematic diagram of the matching structure of the flow field adjustment component 3 and the bottom wall 13 of the embodiment of the present application, combined with Figure 2 and Figure 3 As shown, a part of the flow field adjustment component 3 can be located outside the accommodating chamber 14, and another part of the flow field adjustment component 3 can be located inside the accommodating chamber 14. The flow field adjustment component 3 can be connected to the accommodating chamber 14, and the flow field adjustment component 3 can be used to adjust the gas distribution in the accommodating chamber 14, that is, to adjust the flow field in the accommodating chamber 14. Schematically, the flow field adjustment component 3 can form a flow field in the accommodating chamber 14 by extracting the process gas in the accommodating chamber 14. The flow field adjustment component 3 can be roughly arranged at the center of the bottom wall 13, and the flow field adjustment component 3 can be symmetrical about the center line of the accommodating chamber 14, that is, the flow field adjustment component 3 can be centered relative to the accommodating chamber 14. By setting the flow field adjustment component 3 at the center of the bottom wall 13 and making the flow field adjustment component 3 symmetrical about the center line of the accommodating chamber 14, when the flow field adjustment component 3 extracts the process gas in the accommodating chamber 14, the process gas can flow symmetrically from both sides of the accommodating chamber 14 to the center of the bottom wall 13, and a relatively symmetrical flow field can be formed in the accommodating chamber 14, thereby improving the uniformity of the plasma distribution, which is beneficial to the etching uniformity of the process chamber 100.

[0032] Combination Figure 2 and Figure 3As shown, illustratively, the flow field adjustment component 3 may include an air pump 31 and a pressure control valve 32. The air pump 31 may be located outside the accommodating chamber 14. The air pump 31 may be arranged at the center line of the cavity 1, that is, the center line of the air pump 31 may coincide with or substantially coincide with the center line of the cavity 1. Schematically, the air pump 31 may be a mechanical pump, a molecular pump, etc. The bottom wall 13 may be provided with a first through hole 131, and the first through hole 131 may be arranged at the bottom center of the cavity, or near the bottom center. The air pump 31 may be connected to the inner cavity of the cavity 1, that is, the accommodating chamber 14, through the first through hole 131, and the air pump 31 may be used to extract the process gas in the accommodating chamber 14.

[0033] Combination Figure 2 and Figure 3 As shown, the pressure control valve 32 can be arranged at the center line of the chamber 1, that is, the center line of the pressure control valve 32 can coincide or substantially coincide with the center line of the chamber 1. The pressure control valve 32 can be used to allow the process gas pumped by the gas pump 31 to enter the chamber 1 at a set pressure.

[0034] like Figure 3As shown, illustratively, the pressure control valve 32 may include a drive assembly 321 and a valve plate 322, the drive assembly 321 may be at least partially located outside the accommodating chamber 14, and the portion of the drive assembly 321 located outside the accommodating chamber 14 may be connected to a drive device (not shown in the figure) so as to pass through the chamber wall 10 through the first through hole 131 under the drive of the drive device, such as a motor. The valve plate 322 may be located in the accommodating chamber 14 and correspond to the first through hole 131, and the center line of the valve plate 322 may coincide with or substantially coincide with the center line of the chamber 1. The bottom wall 13 may be provided with a second through hole 132, the drive assembly 321 may pass through the second through hole 132 and connect to the valve plate 322, and the drive assembly 321 may be used to push the valve plate 322 to reciprocate relative to the air pump 31. That is, under the drive of the drive assembly 321, the valve plate 322 can move along the vertical direction of the chamber 1 to move away from or close to the first through hole 131, and the vertical direction may be the center line direction of the first through hole 131. Schematically, when the process chamber 100 is arranged in a working environment, the vertical direction can be a direction vertical or approximately vertical to the ground. When the driving component 321 moves toward the accommodating chamber 14, the valve plate 322 can be driven by the driving component 321 away from the bottom wall 13 and the first through hole 131; when the driving component 321 moves away from the accommodating chamber 14, the valve plate 322 can be driven by the driving component 321 to approach the bottom wall 13 and the first through hole 131 until the valve plate 322 blocks the first through hole 131, so that the air pump 31 no longer extracts the process gas in the accommodating chamber 14. The lifting and lowering action of the pressure control valve 32 can adjust the distance between the pressure control valve 32 and the air pump 31, affect the total flow conductance in the accommodating chamber 14, and then control the air pressure in the discharge area in the accommodating chamber 14. Through the cooperation of the pressure control valve 32 and the air pump 31, and making the valve plate 322 symmetrical about the axis of the first through hole 131, when the air pump 31 extracts the process gas in the cavity 1, the process gas can flow symmetrically from both sides of the cavity 1 to the center of the bottom wall 13, and a relatively symmetrical flow field can be formed in the cavity 1, that is, the accommodating cavity 14, thereby improving the uniformity of plasma distribution, which is beneficial to improving the etching uniformity of the process chamber 100 on the wafer.

[0035] Figure 4 is a schematic diagram of the structure of a pressure control valve 32 provided in an embodiment of the present application, combined with Figure 2 , Figure 3 and Figure 4As shown, in a possible implementation, the pressure control valve 32 may include a plurality of drive components 321, each drive component 321 is correspondingly provided with a second through hole 132 on the cavity 1, that is, the number of the drive components 321 may be at least two, and the number of the second through holes 132 may be equal to the number of the drive components 321. Schematically, the number of the drive components 321 and the number of the second through holes 132 may both be two. These drive components 321 are symmetrical about the axis of the first through hole 131, and each drive component 321 is arranged side by side at intervals, each drive component 321 passes through each second through hole 132 and is connected to the valve plate 322, and each drive component 321 can be used to drive the valve plate 322 away from or close to the first through hole 131. When there are multiple drive components 321 and multiple second through holes 132, multiple drive components 321 act on the valve plate 322 together, which not only improves the smoothness of the movement of the valve plate 322, but also increases the flexibility of controlling the valve plate 322. Even if a drive component 321 fails, other drive components 321 can continue to work, ensuring the reliability and continuity of the system. When the valve plate 322 is symmetrical about the axis of the first through hole 131, these drive components 321 are evenly and symmetrically abutted against the valve plate 322. This allows the valve plate 322 to be subjected to a uniform and controllable force when the drive component 321 performs a lifting action, and the distance adjustment between the valve plate 322 and the air pump 31 is more precise, which is conducive to forming a symmetrical flow field in the accommodating chamber 14, improving the uniformity of plasma distribution, and ultimately improving the circumferential etching uniformity of the process chamber 100 on the wafer.

[0036] Figure 5 is a schematic diagram of the structure of another pressure control valve 32 provided in an embodiment of the present application, combined with Figure 2 , Figure 3 and Figure 5 As shown, in a possible implementation, a second through hole 132 may be provided on the chamber 1, and the number of the driving assembly 321 may be one, and one driving assembly 321 passes through one second through hole 132 to connect with the valve plate 322, and the driving assembly 321 may be used to drive the valve plate 322 away from or close to the first through hole 131, that is, the distance adjustment between the valve plate 322 and the air pump 31 may also be achieved through a single driving assembly 321. When the number of the driving assembly 321 and the second through hole 132 is one, while driving the valve plate 322 away from or close to the first through hole 131, the structure of the driving assembly 321 and the chamber 1 is simplified, the preparation cost of the process chamber 100 is reduced, and the potential failure points of the process chamber 100 are reduced. In addition, the space occupied by a single driving assembly 321 is small, which is conducive to arranging other components of the process chamber 100 around the flow field adjustment assembly 3.

[0037] Figure 6 is a schematic diagram of the structure of another pressure control valve 32 provided in an embodiment of the present application, combined with Figure 2 , Figure 3 and Figure 6 As shown, in a possible implementation, the drive assembly 321 may include a first drive assembly 3211 and a plurality of second drive assemblies 3212, the first drive assembly 3211 may be connected to a drive device (not shown in the figure), the plurality of second drive assemblies 3212 are arranged side by side, the first drive assembly 3211 is connected to the second drive assembly 3212, the first drive assembly 3211 or the second drive assembly 3212 passes through the cavity wall 10 of the cavity 1 to connect with the valve plate 322, in another possible implementation, the first drive assembly 3211 and the second drive assembly 3212 may pass through the cavity wall 10 of the cavity 1 to connect with the valve plate 322. The first drive assembly 3211 may be used to drive the second drive assembly 3212 to move, and the second drive assembly 3212 may be used to drive the valve plate 322 away from or close to the first through hole 131. The first drive assembly 3211 may be used as the main drive source to drive the second drive assembly 3212 to move, and the second drive assembly 3212 may be directly connected to and drive the valve plate 322. That is, these second drive components 3212 can all connect the valve plate 322 and the first drive component 3211 to form a "one-to-many" drive structure. Exemplarily, the first drive component 3211 can be lifted and lowered through multiple second through holes 132, and these second drive components 3212 can all be located inside the chamber wall 10. Alternatively, the first drive component 3211 can be located outside the chamber wall 10, and one end of these second drive components 3212 respectively passes through multiple second through holes 132 to connect to the valve plate 322, and the other end can all be connected to the first drive component 3211. This design of graded driving of the first drive component 3211 and the second drive component 3212 makes the driving force transmission more efficient, reduces energy loss, improves the response speed and driving efficiency of the entire drive system, and is conducive to forming a more symmetrical gas flow field in the chamber 1, thereby ensuring the circumferential etching uniformity of the process chamber 100 on the wafer.

[0038] Understandably, Figure 6 There may be multiple second drive components 3212 as shown and described above, which is just a schematic example. In fact, in another embodiment, there may be only one second drive component 3212, which can also realize the hierarchical driving of the first drive component 3211 and the second drive component 3212.

[0039] Combination Figure 2 , Figure 3 and Figure 6 As shown in a possible implementation manner, a ring seal 3221 ( Figure 3The annular structure indicated by the thick dotted line in the figure), the annular seal 3221 can be made of rubber or elastic polymer material, for example. The annular seal 3221 forms a matching contact surface with the edge of the first through hole 131, and the annular seal 3221 can form a sealing match with the edge of the first through hole 131 to block the first through hole 131. When the first driving component 3211 moves away from the accommodating chamber 14, the valve plate 322 can be driven by the multiple second driving components 3212 to approach the bottom wall 13 and the first through hole 131. When the valve plate 322 moves in the vertical direction and completely covers the first through hole 131, the annular seal 3221 is compressed and deformed and seals the cavity 1 to ensure the airtightness of the cavity 1, which is conducive to forming a more symmetrical gas flow field in the cavity 1, thereby ensuring the circumferential etching uniformity of the process chamber 100 on the wafer.

[0040] In other embodiments, a ring-shaped seal may be provided on the side of the bottom wall 13 of the cavity 1 facing the valve plate 322. The ring-shaped seal is arranged around the periphery of the first through hole 131, and the geometric shape of the ring-shaped seal matches that of the edge of the first through hole 131 to form a complementary contact surface, ensuring that the two can fit completely when closed.

[0041] The above introduction is about achieving better flow field symmetry by setting a matching structure of an air pump and a symmetrical pressure control valve in the process chamber. In the etching process, in order to meet the needs of vacuum wafer transfer, the side wall of the cavity will be provided with a wafer transfer opening for placing the wafer into the process chamber or taking the wafer out of the process chamber. Since the wafer transfer opening will destroy the structural symmetry of the cavity, a certain flow field asymmetry will be generated. The present application scheme compensates for the flow field asymmetry caused by the wafer transfer opening by setting a corresponding groove structure in the cavity.

[0042] See also Figure 2 The side wall 12 may include a first side wall 121 and a second side wall 122. The first side wall 121 may be arranged opposite to the second side wall 122. The first side wall 121, the second side wall 122 and the bottom wall 13 may participate in forming the accommodating chamber 14. The second side wall 122 may be provided with an opening 123. The opening 123 may be used to open to connect the inner and outer spaces of the cavity 1, that is, to connect the accommodating chamber 14 and the external space, so that the wafer enters the accommodating chamber 14 through the opening 123, or to close to close the cavity 1. The process chamber 100 may also include a motor 124. The motor 124 may be used to control the lifting and lowering of the base 51 relative to the bottom wall 13, so that the first surface 511 of the base 51 may be located at a position aligned with the opening 123 to receive the wafer passing through the opening 123.

[0043] See also Figure 2 After the opening 123 is formed on the second side wall 122 , the vacuum volume of the area of ​​the accommodating cavity 14 close to the second side wall 122 increases, which may destroy the symmetry of the flow field of the accommodating cavity 14 .

[0044] Figure 7 is a schematic diagram of the structure of a first side wall 121 provided in an embodiment of the present application, combined with Figure 2 and Figure 7 As shown, the first side wall 121 of the cavity 1 may be provided with a groove 125, the opening of the groove 125 faces the opening 123, that is, the inner wall of the cavity 1 opposite to the opening 123, and the first side wall 121 may be provided with a groove 125, which increases the vacuum volume of the area of ​​the accommodating cavity 14 close to the first side wall 121 to balance the gas flow rate on both sides of the cavity 1. The groove 125 can compensate for the asymmetry of the flow field caused by the opening 123, which is conducive to forming a symmetrical flow field in the cavity 1, and improving the etching effect of the process chamber 100 on the wafer. The structure of the groove 125 can be determined as needed, and it can be adapted to the structural layout in the accommodating cavity 14. Schematically, the groove 125 can be in the shape of goggles, that is, the inner surface of the groove 125 can include a curved surface, and the inner surface of the groove 125 can be, for example, half of an ellipsoidal surface.

[0045] Figure 8 is a schematic diagram of another structure of the first side wall 121 provided in an embodiment of the present application, see Figure 8 , the groove 125 may be rectangular.

[0046] Fig. 9 is a schematic diagram of another structure of the first side wall 121 provided in an embodiment of the present application, see Fig. 9 The groove 125 may be a trapezoid, that is, the inner surface of the groove 125 may include a plurality of connected planes, and an angle may be formed between adjacent planes. From the bottom wall of the groove 125 to the opening of the groove 125, the diameter of the groove 125 may increase, so that the groove 125 may be approximately in the shape of a "trumpet".

[0047] Understandably, Figure 2 , Figure 6-Figure 9 The number of grooves 125 shown is only one, which is just a schematic example. In another embodiment, the number of grooves can be multiple, and the shape of the grooves can be one or more of goggle shape, rectangle, trapezoid, etc.

[0048] Understandably, Figure 2 , Figure 6-Figure 9 The shape of the groove 125 shown is only a schematic example. In fact, the shape of the groove is not limited thereto and can be set according to the shape of the opening 123 to match the structural layout of the process chamber 100, so that the groove 125 can compensate for the flow field asymmetry caused by the opening 123 while ensuring a reasonable spatial layout of the process chamber 100.

[0049] Fig.10 is a schematic diagram of the structure of a conductive lining 15 provided in an embodiment of the present application, combined with Figure 2 and Fig.10 As shown, the process chamber 100 may further include a conductive liner 15 and an upper shell 16. The conductive liner 15 may be cylindrical, and the material of the conductive liner 15 may include metal aluminum with a coating or a hard anodized layer, titanium, polycrystalline silicon, and single crystal silicon. The lower electrode 5, the conductive liner 15, and the upper shell 16 may be combined to form a process area 17. Schematically, the conductive liner 15 and the upper shell 16 may be components of the upper electrode. A gas extraction port 151 may be provided at the bottom of the conductive liner 15, and the gas extraction port 151 may surround the first surface 511 of the base 51, that is, the first surface 511 is located in the process area 17.

[0050] Fig.11 is a top view of a conductive lining 15 provided in an embodiment of the present application, combined with Figure 2 , Fig.10 and Fig.11 As shown, the bottom of the conductive liner 15 may be provided with a plurality of through hole groups 152, the plurality of through hole groups 152 are arranged around the gas extraction port 151, and the plurality of through hole groups 152 are evenly distributed around the center line of the conductive liner 15. For example, four through hole groups 152 may be provided at the bottom of the conductive liner 15, and the four through hole groups 152 are evenly distributed at the bottom of the conductive liner 15 along the circumferential direction of the gas extraction port 151. Each through hole group 152 includes at least one fourth through hole 1523, and schematically, each through hole group 152 may include three fourth through holes 1523. The through hole group 152 may be used for the passage of process gas. By providing a plurality of symmetrically distributed through hole groups 152 at the bottom of the conductive liner 15, a relatively symmetrical flow field may be formed when the gas pump 31 extracts gas from the chamber 1, which is beneficial to improving the symmetry of the flow field; a sufficiently high gas conductance may also be formed, which is beneficial to the etching process.

[0051] Combination Figure 2 , Fig.10 and Fig.11As shown, in a possible implementation, each through hole group 152 may include a plurality of fourth through holes 1523 respectively distributed on different diameter lines of the conductive liner 15, and the fourth through holes 1523 may be in a trapezoidal shape. Along the direction from the outside of the conductive liner 15 to the inside of the conductive liner 15, the caliber of each fourth through hole 1523 may be decreasing. Schematically, the through hole group 152 may have a first end 1521 and a second end 1522, and the first end 1521 and the second end 1522 may be opposite ends in the extension direction of the through hole group 152, respectively. The center of the air extraction port 151, the first end 1521 and the second end 1522 may be arranged in sequence, and from the first end 1521 to the second end 1522, the width of each fourth through hole 1523 may be increasing, that is, the through hole group 152 may be radially away from the air extraction port 151. The closer the plasma in the process area 17 is to the gas extraction port 151, the easier it is to escape. By making the width of the through hole group 152 close to the gas extraction port 151 smaller, the conductive liner 15 can effectively confine the plasma and reduce the amount of plasma leaking from the through hole group 152. By making the width of the through hole group 152 far from the gas extraction port 151 larger, the bottom of the conductive liner 15 can have a sufficiently large exhaust area to form a relatively symmetrical flow field when the gas pump 31 evacuates the accommodating cavity 14, which is conducive to improving the symmetry of the flow field, thereby ensuring the etching uniformity of the process chamber 100 on the wafer; it can also form a sufficiently high gas conductance, which is conducive to the etching process; since the plasma far from the gas extraction port 151 is not easy to escape, increasing the width of the through hole group 152 far from the gas extraction port 151 will not cause too much plasma to leak from the through hole group 152.

[0052] Fig.12 is a top view of another conductive liner 15 provided in an embodiment of the present application, combined with Figure 2 , Fig.10 and Fig.12As shown, in a possible implementation, each through hole group 152 may include a plurality of fourth through holes 1523 distributed on the same radial line of the conductive liner 15. Schematically, the fourth through holes 1523 may be circular. Along the direction from the outside of the conductive liner 15 to the inside of the conductive liner 15, the through hole area of ​​the fourth through holes 1523 of each through hole group 152 tends to decrease. That is, from the second end 1522 to the first end 1521, the diameter of the fourth through hole 1523 tends to decrease. By making the through hole area of ​​the fourth through hole 1523 close to the exhaust port 151, that is, close to the inside of the conductive liner 15, smaller, the conductive liner 15 can effectively confine the plasma and reduce the amount of plasma leakage from the fourth through hole 1523. By making the through-hole area of ​​the fourth through-hole 1523 far away from the exhaust port 151, i.e., close to the outer side of the conductive lining 15, larger, the bottom of the conductive lining 15 can have a sufficiently large exhaust area to form a relatively symmetrical flow field when the gas pump 31 evacuates the accommodating cavity 14, which is beneficial to improving the symmetry of the flow field, thereby ensuring the etching uniformity of the wafer by the process chamber 100; it can also form a sufficiently high gas conductance, which is beneficial to the etching process; since the plasma far away from the exhaust port 151 is not easy to escape, increasing the through-hole area of ​​the fourth through-hole 1523 far away from the exhaust port 151 will not cause excessive plasma to leak from the through-hole group 152.

[0053] Combination Figure 2 , Fig.10 and Fig.12 As shown, in a possible implementation, each through hole group 152 may include a plurality of subgroups 1524, and each subgroup 1524 may include a plurality of fourth through holes 1523 distributed on the same radial line of the conductive liner 15, and the conductive liner 15 between the plurality of fourth through holes 1523 on the same radial line may reduce the amount of plasma leaking from the through hole group 152, that is, the plurality of fourth through holes 1523 distributed at intervals may effectively confine the plasma while ensuring the exhaust area. In this implementation, the subgroups 1524 in each through hole group 152 may be distributed on different radial lines of the conductive liner 15, respectively, and the plurality of subgroups 1524 distributed on different radial lines may affect most areas of the conductive liner 15, thereby ensuring the uniformity of the circumferential exhaust of the process area, while limiting the amount of plasma leakage in the entire process area 17, thereby improving the circumferential etching non-uniformity of the process chamber 100 on the wafer.

[0054] Fig.13 is a top view of another conductive liner 15 provided in an embodiment of the present application, combined with Figure 2 , Fig.10 and Fig.13As shown, in a possible implementation, each through hole group 152 may include a plurality of fourth through holes 1523 respectively distributed on different diameter lines of the conductive liner 15, and the fourth through holes 1523 may be spindle-shaped. Along the direction from the outside of the conductive liner 15 to the inside of the conductive liner 15, the caliber of each fourth through hole 1523 may be decreasing. From the first end 1521 to the second end 1522, the width of each fourth through hole 1523 may be increasing, that is, the through hole group 152 may be radially away from the direction of the gas extraction port 151. This can ensure that the conductive liner 15 effectively confines the plasma, and can also form a sufficiently large exhaust area at the bottom of the conductive liner 15, so as to form a relatively symmetrical flow field when the gas pump 31 evacuates the accommodating chamber 14, which is conducive to improving the symmetry of the flow field; it can also form a sufficiently high gas conductance, which is conducive to the etching process.

[0055] Fig.14 is a top view of another conductive liner 15 provided in an embodiment of the present application, combined with Figure 2 , Fig.10 and Fig.14 As shown, in a possible implementation, each through hole group 152 may include a plurality of fourth through holes 1523 distributed on the same radial line of the conductive liner 15. Schematically, the fourth through holes 1523 may be in an arc shape. Along the direction from the outside of the conductive liner 15 to the inside of the conductive liner 15, the through hole area of ​​the fourth through holes 1523 of each through hole group 152 tends to decrease. That is, from the second end 1522 to the first end 1521, the diameter of the fourth through hole 1523 tends to decrease. The regular arc-shaped fourth through hole 1523 can also form a sufficiently high gas conductance while improving the symmetry of the flow field, which is beneficial to improving the etching uniformity of the process chamber 100 on the wafer.

[0056] The above describes the solution of the embodiment of the present application to obtain good flow field symmetry by setting a flow field adjustment component in the process chamber, setting grooves on the side walls of the cavity, and opening evenly distributed through holes on the conductive liner. The solution of the embodiment of the present application to achieve RF symmetry will be further described below.

[0057] Combination Figure 2 and Fig.10As shown, unlike the prior art, the embodiment of the present application does not set the opening 123 on the conductive liner 15, but sets the opening 123 on the inner wall 12 of the cavity 1, so as to avoid destroying the RF symmetry and ensure good RF symmetry. When transferring the wafer to the accommodating cavity 14, the conductive liner 15 can be fixed relative to the cavity 1, and the motor 124 is needed to control the lower electrode 5 and the reflow plate 4 to move relative to the cavity 1. Schematically, the motor 124 is used to control the base 51 to move away from the conductive liner 15, and the first surface 511 can be separated from the process area 17 and reach a position aligned with the opening 123 to receive the wafer passing through the opening 123; then the motor 124 is used to control the base 51 to return along the original path, and the first surface 511 carrying the wafer returns to the process area 17. By setting a conductive liner 15 without a wafer transfer opening in the cavity 1, the RF reflow symmetry of the process area 17, that is, the discharge area, can be ensured, which is conducive to improving the etching uniformity of the process chamber 100.

[0058] See also Figure 2 The upper shell 16 can be electrically connected to the feeding device 2. When the electrode structure 513 provided on the base 51 is electrically connected to the feeding device 2, the feeding device 2 simultaneously provides radio frequency current to the upper shell 16 and the electrode structure 513, and an electric field can be formed between the upper shell 16 and the lower electrode 5.

[0059] See also Figure 2 The process area 17 can be used to introduce process gas, and the process gas can be ionized by the electric field in the process area 17 to form plasma, and the plasma bombards the surface of the wafer supported by the first surface 511 of the base 51 to perform etching.

[0060] The above detailed description of the present application is that the conductive liner without a transfer plate opening is provided in the cavity to ensure the symmetry of the RF reflux in the discharge area, which is beneficial to improving the etching uniformity of the process chamber. The embodiment of the present application can also improve the symmetry of the RF reflux by providing a reflux disk in the cavity.

[0061] See also Figure 2 The return plate 4 can be located below the lower electrode 5, and one end of the return plate 4 can be electrically connected to the electrode structure 513, wherein the electrode structure 513 can be a ring-shaped ground loop. The other end of the return plate 4 can be electrically connected to the feeding device 2. The return plate 4 can be used to provide a return path for the RF signal, i.e., the RF current.

[0062] Fig.15 Schematic diagram of the structure of a reflux tray 4 provided in an embodiment of the present application. Figure 2 and Fig.15As shown, for example, the reflux plate 4 may be a T-shaped symmetrical structure, and the reflux plate 4 may include a main body 41 and a base 42 connected to each other, and both the main body 41 and the base 42 may be rotating bodies, and the axis of the main body 41 may coincide with the axis of the base 42, and the projection of the base 42 along the axis may fall within the boundary of the main body 41. The main body 41 may be in the shape of a disk, a cylinder, a cone, or a round cap. Fig.15 and Figure 1 As shown, the body 41 can be electrically connected to the electrode structure 513. The base 42 can be columnar.

[0063] like Fig.15 As shown, illustratively, the return plate 4 may be provided with a fifth through hole 44, which may penetrate the main body 41 and the base 42 along the axis of the return plate 4, and form openings on both the main body 41 and the base 42. Exemplarily, the center line of the fifth through hole 44 may coincide with or approximately coincide with the axis of the return plate 4. The fifth through hole 44 is used for the RF feedthrough 23 to be described below to pass through.

[0064] Combination Figure 2 and Fig.15 As shown, in a possible implementation, the feeding device 2 may include a feeding source 21, a matching device 22, a radio frequency feedthrough 23, and a grounding portion 24. The feeding source 21, the matching device 22, and the radio frequency feedthrough 23 may be connected in sequence. The feeding source 21 is used to output radio frequency current. The matching device 22 is used to achieve impedance matching to ensure maximum power transmission. The radio frequency feedthrough 23 is used to feed power to the lower electrode 5. The grounding portion 24 may be electrically connected to the matching device 22 to achieve radio frequency return.

[0065] like Fig.15 As shown, illustratively, the RF feed 23 may be columnar or rod-shaped, and the grounding portion 24 may be coated on the outer surface of the RF feed 23. The RF feed 23 may pass through the opening of the fifth through hole 44 on the base 42, and pass through the opening of the fifth through hole 44 on the main body 41. The grounding portion 24 may only pass through the portion of the fifth through hole 44 on the base 42, or may pass through the portion of the fifth through hole 44 on the base 42 and the portion of the fifth through hole 44 on the main body 41. Among them, the grounding portion 24 may contact the inner wall of the fifth through hole 44, that is, the grounding portion 24 may be electrically connected to the return disk 4; the grounding portion 24 separates the inner wall of the fifth through hole 44 from the RF feed 23, so that the RF feed 23 is not electrically connected to the return disk 4. Combined with Fig.15 and Figure 1 As shown, the RF feedthrough 23 and the end of the grounding portion 24 away from the return plate 4 can be electrically connected to the matcher 22 of the feeding device 2. The end of the RF feedthrough 23 passing through the fifth through hole 44 can be electrically connected to the base 51 of the lower electrode 5.

[0066] Combination Figure 2 and Fig.15 As shown, the feeding source 21, the matching device 22, the RF feeding element 23 and the base 51 of the lower electrode 5 can be connected in sequence to form an RF feeding circuit, and the RF current is fed into the lower electrode 5 through the RF feeding circuit. Figure 1 and Fig.15 As shown, the electrode structure 513 of the lower electrode 5, the main body 41 of the reflux tray 4, the base 42 of the reflux tray 4, the grounding portion 24 and the matcher 22 can be connected in sequence to form a radio frequency reflux circuit, and the radio frequency reflux flows back through the radio frequency reflux circuit.

[0067] See also Figure 2 In a possible implementation, at least part of the feeding device 2 can be disposed on a side of the first side wall 121 away from the base 51, that is, at least part of the feeding device 2 can be disposed outside the cavity 1. This design is called RF side feeding. For example, the feeding source 21 and the matcher 22 of the feeding device 2 can be disposed outside the cavity 1, the RF feedthrough 23 of the feeding device 2 can be partially disposed outside the cavity 1, and the other part of the RF feedthrough 23 can be disposed inside the cavity 1.

[0068] In this embodiment, by providing the return plate 4, the distribution of the RF return can be adjusted, the asymmetry of the RF return caused by the RF side feeding can be compensated, and the symmetry of the RF return can be improved. By providing the main body 41 and the base 42 in the return plate 4, the transmission characteristics of the RF return can be matched, so that the RF return can be gathered from the periphery of the main body 41 to the center of the main body 41, and continue to be transmitted along the base 42 (this can be called the "closing" of the RF return), which is conducive to improving the symmetry of the RF return.

[0069] Combination Figure 2 and Fig.15 As shown, in a possible implementation manner, the main body 41 may be disc-shaped, and a third through hole 43 may be provided in a semi-disc region of the main body 41 close to the first side wall 121, or a third through hole 43 is provided in a semi-disc region of the main body 41 close to the feeding device 2. The semi-disc region refers to half of the disc shape. Therefore, the third through hole 43 is eccentrically arranged relative to the center of the main body 41 (or the fifth through hole 44). The third through hole 43 may be symmetrical about the axis of the main body 41 (or the center line of the fifth through hole 44). Schematically, the third through hole 43 may be annular or arc-shaped. The third through hole 43 may be located between the axis of the feeding device 2 and the main body 41.

[0070] In this embodiment, since the feeding device 2 is arranged on the outside of the first side wall 121 (i.e., RF side feeding), the RF current is fed into the accommodating cavity 14 from the side of the cavity 1, which makes the current density near the first side wall 121 in the cavity 1 relatively large, and the RF current distribution in the accommodating cavity 14 is uneven. However, by providing the third through hole 43 in the semi-circular disk area of ​​the main body 41 close to the feeding device 2, the RF current on the main body 41 does not flow through the non-conductive area where the third through hole 43 is located, thereby changing the current distribution on the main body 41, and further compensating for the intrinsic asymmetry of the RF caused by the RF side feeding, improving the RF reflux symmetry of the accommodating cavity 14, and facilitating improving the etching effect of the process chamber 100 on the wafer.

[0071] In another possible embodiment, the feeding device 2 can be arranged on the outside of the second side wall 122, and the RF current is fed into the accommodating cavity 14 from the side of the cavity 1, which makes the current density in the cavity 1 near the second side wall 122 larger, and the RF current distribution in the accommodating cavity 14 is uneven; by setting the third through hole 43 in the semi-disc area of ​​the main body 41 near the second side wall 122, the RF current on the main body 41 will not flow through the non-conductive area where the third through hole 43 is located, thereby changing the current distribution on the main body 41, thereby compensating for the RF intrinsic asymmetry caused by the side feeding of the RF current, improving the RF reflux symmetry of the accommodating cavity 14, and helping to improve the etching effect of the process chamber 100.

[0072] Fig.16 Schematic diagram of another structure of the reflux tray 4 provided in the embodiment of the present application. Figure 2 and Fig.16 As shown, in a possible implementation, the main body 41 may be provided with a plurality of third through holes 43, and the plurality of third through holes 43 may be respectively distributed on different radial lines of the main body 41, that is, the extension lines of the plurality of third through holes 43 may intersect at the center of the main body 41. Schematically, the third through hole 43 may be in the shape of an elongated strip. The scheme of this embodiment can optimize the transmission path of the RF signal, offset the unevenness in the RF signal transmission process to a certain extent, compensate for the intrinsic asymmetry of the RF caused by the RF current side feeding, improve the RF reflux symmetry of the accommodating cavity 14, and help improve the etching effect of the process chamber 100. In addition, the maintainability of the lower electrode cable and the water pipe can also be improved.

[0073] Fig.17 is a schematic diagram of the structure of another reflux tray 4 provided in an embodiment of the present application. Fig.17 , the third through hole 43 may be circular. It is understandable that Figure 15-17The number and shape of the third through hole shown are only for illustration. In the embodiment of the present application, there may be one or more third through holes, and the shape of the third through hole may be one or more of annular, circular and elongated, or other shapes that meet product requirements. The third through hole 43 of regular shape can optimize the transmission path of the RF signal, thereby offsetting the non-uniformity in the RF signal transmission process to a certain extent, further improving the symmetry of the RF reflux in the process chamber 100, and facilitating improving the circumferential etching effect of the process chamber 100 on the wafer.

[0074] The above description is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the possible implementations of the present application and the features of the possible implementations can be combined with each other. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A process chamber, characterized in that: include: A cavity, wherein a first through hole is provided at the bottom center of the cavity; an air pump, the air pump being disposed outside the cavity and communicating with the first through hole; A pressure control valve comprises a valve plate and at least one driving component, wherein the valve plate is arranged in the cavity and faces the first through hole, and the at least one driving component passes through the cavity and is connected to the valve plate; the valve plate can be driven by the at least one driving component to move in the vertical direction of the cavity to move away from or close to the first through hole.

2. The process chamber according to claim 1, characterized in that: The cavity is provided with at least one second through hole, The at least one driving component is one, the at least one second through hole is one, the driving component passes through the second through hole and is connected to the valve plate, and the driving component is used to drive the valve plate away from or close to the first through hole; Or, the at least one driving assembly includes a plurality of driving assemblies, each driving assembly is correspondingly provided with a second through hole on the cavity, the at least one second through hole is a plurality of driving assemblies, each second through hole corresponds to the position of each driving assembly, each driving assembly is arranged side by side and spaced apart, each driving assembly passes through each second through hole and is connected to the valve plate, and each driving assembly is used to drive the valve plate away from or close to the first through hole; Or, the at least one driving component includes multiple components, the at least one driving component includes a first driving component and multiple second driving components, the multiple second driving components are arranged side by side and spaced apart, the first driving component is connected to the multiple second driving components, the first driving component and / or the multiple second driving components pass through the cavity wall of the cavity and are connected to the valve plate, the first driving component is used to drive the multiple second driving components to move, and the multiple second driving components are used to drive the valve plate away from or close to the first through hole.

3. The process chamber according to claim 1, characterized in that: An annular seal is provided on one side of the valve plate facing the first through hole, and the annular seal forms a matching contact surface with the edge of the first through hole. When the valve plate moves along the vertical direction and completely covers the first through hole, the annular seal is compressed and deformed to seal the cavity.

4. The process chamber according to any one of claims 1 to 3, characterized in that: The process chamber also includes a lower electrode, a feeding device and a reflow disk. The feeding device passes through the side wall of the cavity and is connected to the lower electrode. The feeding device is used to feed power to the lower electrode. The reflow disk is located below the lower electrode. The reflow disk is used to provide a reflow path for the radio frequency signal. The reflow disk is provided with at least one third through hole. The at least one third through hole is located in a semicircular disk area of ​​the reflow disk close to the feeding device.

5. The process chamber according to claim 4, characterized in that: The at least one third through hole has a shape of one or more of an annular shape, a circular shape, and a long strip shape.

6. The process chamber according to any one of claims 1 to 3, characterized in that: The cavity is provided with an opening for the substrate to enter and exit, and the inner wall of the cavity opposite to the opening is provided with a groove.

7. The process chamber according to claim 6, characterized in that: The shape of the groove is at least one of goggle-shaped, rectangular, and trapezoidal.

8. The process chamber according to any one of claims 1 to 3, characterized in that: The process chamber also includes a conductive liner, which is located in the process chamber and is used to enclose a process area with the lower electrode of the process chamber; the conductive liner is provided with a plurality of through hole groups, each of the through hole groups includes at least one fourth through hole, and the plurality of through hole groups are evenly distributed around the center line of the conductive liner.

9. The process chamber according to claim 8, characterized in that: Each of the through hole groups includes a plurality of fourth through holes distributed on the same radial line of the conductive lining; along the direction from the outer side of the conductive lining to the inner side of the conductive lining, the through hole area of ​​the fourth through holes in each of the through hole groups tends to decrease.

10. The process chamber according to claim 8, characterized in that: Each of the through-hole groups includes a plurality of sub-groups, each of the sub-groups includes a plurality of fourth through-holes distributed on a same radial line of the conductive liner, and the plurality of sub-groups are respectively distributed on different radial lines of the conductive liner.

11. The process chamber according to claim 8, characterized in that: Each of the through hole groups includes a plurality of fourth through holes respectively distributed on different diameter lines of the conductive liner; along the direction from the outer side of the conductive liner to the inner side of the conductive liner, the diameter of each of the fourth through holes tends to decrease.

12. A semiconductor device, characterized in that: include: A process chamber as claimed in any one of claims 1 to 11.

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