Power component base and manufacturing method thereof
By forming conductive blocks on the ceramic substrate and forming a multi-layered coating using electroplating technology, the problem of burrs in the existing power component base during the manufacturing process is solved, and the flatness and reliability of the base are achieved.
Patent Information
- Application Number
- CN202410295978.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-10-30
- Filing Date
- 2024-03-15
- Publication Date
- 2025-05-02
AI Technical Summary
The existing power component bases use electroplating to generate conductors during the manufacturing process, resulting in the generation of connecting strips, and burrs are prone to occur after cutting.
The conductive block is formed on the ceramic substrate by sputtering and electroplating steps, and a multi-layered coating is formed through the electroplating technology, including the first coating, the second coating and the third coating, ensuring that the conductive block exists independently without the need for a connecting tape.
It effectively avoids burr problems caused by power component base during manufacturing, ensuring the flatness and reliability of the base.
Smart Images
Figure CN119920694A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a base, and in particular to a power component base and a manufacturing method thereof. Background Art
[0002] The existing power component base only uses electroplating to generate conductors during the manufacturing process, so there will be a connection band (tie bar), which makes it easy to produce burrs on the existing power component base after cutting the connection band. Therefore, the inventor believes that the above defects can be improved, and has devoted himself to research and applied scientific principles, and finally proposed a reasonable design and effective improvement of the above defects. Summary of the invention
[0003] The present application provides a power component base and a manufacturing method thereof, which can effectively improve the defects that may occur in the existing power component base.
[0004] The present application discloses a method for manufacturing a power component base, which comprises: a sputtering step: forming a sputtering layer on a plate surface of a ceramic substrate by sputtering; a patterning step: forming an insulating layer on the sputtering layer, and forming an electroplating tank together with a part of the sputtering layer; wherein the part of the sputtering layer is defined as an electroplating part; an electroplating step: electroplating the electroplating part of the sputtering layer to form a conductive block in the electroplating tank; a removing step: removing the insulating layer and a part of the sputtering layer to leave the electroplating part of the sputtering layer; and a chemical plating step: performing a chemical plating operation on the conductive block to sequentially form a first chemical plating layer connected to the ceramic substrate and covering the conductive block and the electroplating part, a second chemical plating layer connected to the ceramic substrate and covering the first chemical plating layer, and a third chemical plating layer connected to the ceramic substrate and covering the second chemical plating layer; wherein the material of the first chemical plating layer is gold or nickel, the material of the second chemical plating layer is palladium, and the material of the third chemical plating layer is gold and is used for mounting a power component thereon.
[0005] Optionally, in the sputtering step, the sputtering layer includes a titanium sputtering layer covering the plate surface, and a copper sputtering layer covering the titanium sputtering layer; in the electroplating step, the material of the conductive block is copper.
[0006] Optionally, the material of the first chemical plating layer is limited to nickel, and the thickness of the first chemical plating layer is greater than the thickness of the second chemical plating layer, and the thickness of the second chemical plating layer is greater than the thickness of the third chemical plating layer.
[0007] Optionally, the thickness of the first chemical plating layer is between 0.15 micrometers and 0.25 micrometers, the thickness of the second chemical plating layer is between 0.08 micrometers and 0.12 micrometers, and the thickness of the third chemical plating layer is between 0.05 micrometers and 0.07 micrometers.
[0008] Optionally, during the formation process of the third chemical plating layer in the chemical plating step: a thin gold layer is formed on the second chemical plating layer by immersion gold plating, and a thick gold layer is formed on the thin gold layer by self-catalytic gold plating, and its thickness is 4 to 6 times the thickness of the thin gold layer.
[0009] The present application also discloses a power component base, which includes: a ceramic substrate; a sputtered layer formed on the plate surface of the ceramic substrate, and the sputtered layer includes an electroplating portion; a conductive block formed on the electroplating portion; a first chemically plated layer covering the conductive block and the electroplating portion, and the bottom edge of the first chemically plated layer is connected to the ceramic substrate; wherein the material of the first chemically plated layer is gold or nickel; a second chemically plated layer covering the first chemically plated layer, and the bottom edge of the second chemically plated layer is connected to the ceramic substrate; wherein the material of the second chemically plated layer is palladium; and a third chemically plated layer covering the second chemically plated layer, and the bottom edge of the third chemically plated layer is connected to the ceramic substrate; wherein the material of the third chemically plated layer is gold and is used for a power component to be mounted thereon.
[0010] Optionally, the sputtering layer includes a titanium sputtering layer covering the board surface and a copper sputtering layer covering the titanium sputtering layer; wherein the conductive block is made of copper, and the conductive block is connected to the copper sputtering layer, and the first chemical plating layer is connected to the side edge of the titanium sputtering layer and the side edge of the copper sputtering layer.
[0011] Optionally, the material of the first chemical plating layer is limited to nickel, and the thickness of the first chemical plating layer is greater than the thickness of the second chemical plating layer, and the thickness of the second chemical plating layer is greater than the thickness of the third chemical plating layer.
[0012] Optionally, the thickness of the first chemical plating layer is between 0.15 micrometers and 0.25 micrometers, the thickness of the second chemical plating layer is between 0.08 micrometers and 0.12 micrometers, and the thickness of the third chemical plating layer is between 0.05 micrometers and 0.07 micrometers.
[0013] Optionally, the third chemical plating layer includes a thin gold layer covering the second chemical plating layer, and a thick gold layer covering the thin gold layer, and the thickness of the thick gold layer is 4 to 6 times that of the thin gold layer.
[0014] The present application further discloses a method for manufacturing a power component base, which includes: a sputtering step: sputtering to form a plurality of electroplating parts on two plate surfaces of a ceramic substrate; an electroplating step: electroplating the plurality of electroplating parts to form a conductive block on each electroplating part; a covering step: forming two insulating layers on the two plate surfaces of the ceramic substrate, and the plurality of conductive blocks are buried in the two insulating layers; a patterning step: forming a plurality of chemical plating tanks in the two insulating layers, and each chemical plating tank exposes a conductive block; and a first chemical plating step: performing a chemical plating operation in the plurality of chemical plating tanks to form a first chemical plating conductor in each chemical plating tank, which includes a first chemical plating layer connected to the corresponding conductive block, a second chemical plating layer connected to the first chemical plating layer, and a third chemical plating layer connected to the second chemical plating layer; wherein the material of the first chemical plating layer is gold or nickel, the material of the second chemical plating layer is palladium, and the material of the third chemical plating layer is gold.
[0015] Optionally, the third chemical plating layer located in each chemical plating tank is coplanar with the outer surface of the corresponding insulating layer.
[0016] Optionally, the power component base manufacturing method further comprises a second chemical plating step after the first chemical plating step: forming at least one second chemical plating conductor connecting at least two first chemical plating conductors on the outer surface of each insulating layer.
[0017] Optionally, the ceramic substrate has multiple through holes connecting the two board surfaces; in the sputtering step, a tubular extension portion is sputtered in each through hole, which connects two electroplating portions respectively located on the two board surfaces; in the electroplating step, the extension portion located in each through hole is electroplated to form a conductive column, which connects the corresponding two conductive blocks.
[0018] The present application discloses a power component base, which includes: a ceramic substrate having two plate surfaces located on opposite sides; a sputtering layer including a plurality of electroplating parts respectively formed on the two plate surfaces; a plurality of conductive blocks respectively formed in the plurality of electroplating parts; two insulating layers respectively formed on the two plate surfaces of the ceramic substrate, and the plurality of conductive blocks are buried in the two insulating layers; wherein the two insulating layers are formed with a plurality of chemical plating tanks, and each chemical plating tank exposes a conductive block; and a plurality of first chemical plating conductors respectively formed in the plurality of chemical plating tanks, and each first chemical plating conductor includes: a first chemical plating layer connected to the corresponding conductive block, and the material of the first chemical plating layer is gold or nickel; a second chemical plating layer connected to the first chemical plating layer, and the material of the second chemical plating layer is palladium; and a third chemical plating layer connected to the second chemical plating layer, and the material of the third chemical plating layer is gold.
[0019] Optionally, the third chemical plating layer located in each chemical plating tank is coplanar with the outer surface of the corresponding insulating layer.
[0020] Optionally, the power component base further includes a plurality of second chemically plated conductors, which are respectively formed on outer surfaces of the two insulating layers, and each second chemically plated conductor is connected to at least two first chemically plated conductors.
[0021] Optionally, the ceramic substrate has a plurality of through holes connecting the two board surfaces, and the sputtered layer includes a plurality of extension portions respectively located within the plurality of through holes, each extension portion is tubular and connects two electroplated portions respectively located on the two board surfaces; wherein the power component base includes a plurality of conductive columns respectively located within the plurality of extension portions, each of which connects two corresponding conductive blocks.
[0022] In summary, the power component base and the manufacturing method thereof disclosed in the present application, by forming a conductive structure for installing the power component, enable the conductive block, the first chemical plating layer, the second chemical plating layer, and the third chemical plating layer to exist independently without forming any connecting strips, thereby effectively avoiding the generation of burrs on the power component base.
[0023] Furthermore, the power component base manufacturing method and the manufacturing method thereof can also form a plurality of the first chemically plated conductors so that the plurality of the first chemically plated conductors can each exist independently, thereby eliminating the need to form any connecting strips between any two of the first chemically plated conductors, thereby effectively avoiding the generation of burrs on the power component base.
[0024] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, such description and drawings are only used to illustrate the present application and are not intended to limit the scope of protection of the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] Figure 1 Schematic diagram of the process flow of the power component base manufacturing method of the first embodiment of the present application.
[0026] Figure 2 for Figure 1 Schematic diagram of the sputtering step and the patterning step in FIG.
[0027] Figure 3 for Figure 1 Schematic diagram of the electroplating steps.
[0028] Figure 4 for Figure 1 Schematic diagram of the removal steps in .
[0029] Figure 5 for Figure 1 Schematic diagram of the electroless plating steps.
[0030] Figure 6 This is a schematic diagram of a power component base according to the second embodiment of the present application.
[0031] Figure 7 This is a schematic flow chart of the steps of the method for manufacturing a power component base according to the third embodiment of the present application.
[0032] Figure 8 for Figure 7 Schematic diagram of the sputtering steps in FIG.
[0033] Fig. 9 for Figure 7 Schematic diagram of the electroplating steps.
[0034] Fig.10 for Figure 7 Schematic diagram of the covering step and patterning step in .
[0035] Fig.11 for Figure 7 Schematic diagram of the first and second electroless plating steps. DETAILED DESCRIPTION
[0036] The following is an explanation of the implementation methods of the "power component base and its manufacturing method" disclosed in this application through specific embodiments. Those skilled in the art can understand the advantages and effects of this application from the contents disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of this application. In addition, the drawings of this application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of this application in detail, but the disclosed contents are not intended to limit the scope of protection of this application.
[0037] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.
[0038] Embodiment 1
[0039] See also Figures 1 to 5 This embodiment discloses a power component base 100 and a manufacturing method S100 thereof. To facilitate the description of this embodiment, the power component base manufacturing method S100 will be first introduced below, and then the components of the power component base 100 and their connection relationships will be described.
[0040] The power device base manufacturing method S100 in this embodiment sequentially includes (or implements): a sputtering step S110, a patterning step S120, an electroplating step S130, a removal step S140, and a chemical plating step S150. This embodiment sequentially introduces the multiple steps S110-S150 of the power device base manufacturing method S100 below to produce the power device base 100, but the present application is not limited thereto.
[0041] For example, in other embodiments not shown in the present application, the above-mentioned multiple steps S110~S150 of the power component base manufacturing method S100 can be increased or decreased or the implementation order can be adjusted according to design requirements; or, the power component base 100 can be manufactured by a method other than the power component base manufacturing method S100.
[0042] The sputtering step S110: Figure 1 and Figure 2 As shown, a sputtering layer 2 is formed by sputtering on a plate surface 11 of a ceramic substrate 1. It should be noted that the sputtering layer 2 in this embodiment includes a titanium sputtering layer 2a covering the plate surface 11 and a copper sputtering layer 2b covering the titanium sputtering layer 2a, but the invention is not limited thereto.
[0043] The patterning step S120: Figure 1 and Figure 2 As shown, an insulating layer 3 is formed on the sputtered layer 2, and the insulating layer 3 and a part of the sputtered layer 2 together form an electroplating tank 31. The part of the sputtered layer 2 is defined as an electroplating portion 21. Further, the insulating layer 3 is formed on the copper sputtered layer 2b in this embodiment, and the depth and shape of the electroplating tank 31 can be adjusted according to actual needs, and the present application is not limited here.
[0044] The electroplating step S130: Figure 1 and Figure 3 As shown, the electroplating portion 21 of the sputtering layer 2 is electroplated to form a conductive block 4 in the electroplating tank 31. In this embodiment, the shape of the conductive block 4 is equal to the shape of the electroplating tank 31, and the material of the conductive block 4 is preferably copper (Cu).
[0045] The removal step S140: Figure 1 and Figure 4 As shown, the insulating layer 3 and a portion of the sputtered layer 2 are removed, so that the electroplating portion 21 of the sputtered layer 2 is left.
[0046] The chemical plating step S150: Figure 1 and Figure 5As shown, an electroless plating process is performed on the conductive block 4 to sequentially form a first electroless plating layer 5 connected to the ceramic substrate 1 and covering the conductive block 4 and the electroplating portion 21, a second electroless plating layer 6 connected to the ceramic substrate 1 and covering the first electroless plating layer 5, and a third electroless plating layer 7 connected to the ceramic substrate 1 and covering the second electroless plating layer 6. The first electroless plating layer 5 may be made of gold (Au) or nickel (Ni), the second electroless plating layer 6 is made of palladium (Pd), and the third electroless plating layer 7 is made of gold and is used for a power component (not shown in the figure, such as a laser transmitter) to be installed thereon.
[0047] Accordingly, in this embodiment, the power component base manufacturing method S100 forms a conductive structure for installing the power component through the chemical plating step S150, so that the conductive block 4, the first chemical plating layer 5, the second chemical plating layer 6, and the third chemical plating layer 7 can exist independently without forming any tie bar, thereby effectively avoiding the generation of burrs on the power component base 100.
[0048] To put it another way, in other embodiments not shown in the present application, when the power component base manufacturing method S100 forms a plurality of the electroplating parts 21 separated from each other and a plurality of the conductive blocks 4 located thereon on the ceramic substrate 1, the plurality of the conductive blocks 4 are each formed with the first electroplating layer 5, the second electroplating layer 6, and the third electroplating layer 7 coated thereon in the electroplating step S150, so that the plurality of the conductive blocks 4 are electrically isolated from each other and no connecting bands are formed.
[0049] It should be additionally explained that when the material of the first chemical plating layer 5 is further limited to nickel, the thickness of the first chemical plating layer 5 is greater than the thickness of the second chemical plating layer 6, and the thickness of the second chemical plating layer 6 is greater than the thickness of the third chemical plating layer 7. Further, in the chemical plating step S150, immersion plating is first performed at 80°C for 1 minute to form the first chemical plating layer 5 with a thickness between 0.15 micrometers (μm) and 0.25 micrometers; after the first chemical plating layer 5 is formed, immersion plating is performed at 50°C for 12 minutes to form the second chemical plating layer 6 with a thickness between 0.08 micrometers and 0.12 micrometers; after the second chemical plating layer 6 is formed, immersion plating is performed at 80°C for 5 minutes to form the third chemical plating layer 7 with a thickness between 0.05 micrometers and 0.07 micrometers.
[0050] As described above, this embodiment roughly describes the preferred implementation process of the power component base manufacturing method S100 with the above content, and then roughly introduces the specific structure of the power component base 100 manufactured by the power component base manufacturing method S100 from the perspective of structure. That is to say, some technical features of the power component base 100 can refer to the description of the power component base manufacturing method S100, but this application is not limited to this.
[0051] like Figure 5 As shown, the power component base 100 includes a ceramic substrate 1, a sputtered layer 2 formed on the board surface 11 of the ceramic substrate 1, a conductive block 4 formed on the sputtered layer 2, a first chemical coating 5 covering the conductive block 4, a second chemical coating 6 covering the first chemical coating 5, and a third chemical coating 7 covering the second chemical coating 6.
[0052] In more detail, the sputtering layer 2 includes an electroplating portion 21. The conductive block 4 is formed in the electroplating portion 21, and the bottom edge of the first electroplating layer 5, the bottom edge of the second electroplating layer 6, and the bottom edge of the third electroplating layer 7 are all connected to the ceramic substrate 1 (the board surface 11).
[0053] In other words, the sputtering layer 2 includes a titanium sputtering layer 2a covering the plate surface 11, and a copper sputtering layer 2b covering the titanium sputtering layer 2a. The conductive block 4 is made of copper, and the conductive block 4 is connected to the copper sputtering layer 2b, and the first chemical plating layer 5 is connected to the side edge of the titanium sputtering layer 2a and the side edge of the copper sputtering layer 2b.
[0054] In addition, the material of the first chemical plating layer 5 can be gold (Au) or nickel (Ni), the material of the second chemical plating layer 6 is palladium (Pd), and the material of the third chemical plating layer 7 is gold and is used for a power component (not shown in the figure, such as a laser transmitter) to be installed thereon. Wherein, when the material of the first chemical plating layer 5 is limited to nickel, the thickness of the first chemical plating layer 5 (such as 0.2 microns) is greater than the thickness of the second chemical plating layer 6 (such as 0.1 microns), and the thickness of the second chemical plating layer 6 (such as 0.1 microns) is greater than the thickness of the third chemical plating layer 7 (such as 0.06 microns), but the present application is not limited thereto.
[0055] Embodiment 2
[0056] See also Figure 6 As shown, it is the second embodiment of the present application. Since this embodiment is similar to the above-mentioned first embodiment, the similarities between the two embodiments will not be repeated, and the differences between this embodiment and the above-mentioned first embodiment are roughly described as follows:
[0057] In the forming process of the third chemical plating layer 7 in the chemical plating step S150: a thin gold layer 71 is formed on the second chemical plating layer 6 by immersion gold plating, and a thick gold layer 72 is formed on the thin gold layer 71 by auto-catalytic gold plating, and the thickness of the thick gold layer 72 is 4 to 6 times the thickness of the thin gold layer 71. In other words, the third chemical plating layer 7 includes the thin gold layer 71 covering the second chemical plating layer 6, and the thick gold layer 72 covering the thin gold layer 71.
[0058] In addition, the thickness of the thick gold layer 72 is roughly equal to the sum of the thicknesses of the first chemical plating layer 5 and the second chemical plating layer 6; or in other words, the total thickness of the third chemical plating layer 7 in this embodiment is greater than the sum of the thicknesses of the first chemical plating layer 5 and the second chemical plating layer 6, but the present application is not limited to this.
[0059] In more detail, after the second chemical plating layer 6 is formed, immersion plating is performed for 5 minutes at 80°C to form the thin gold layer 71 with a thickness between 0.05 microns and 0.07 microns; after the thin gold layer 71 is formed, immersion plating is performed for 10 minutes at 50°C to form the thick gold layer 72 with a thickness between 0.2 microns and 0.4 microns.
[0060] Furthermore, the self-catalytic gold plating method in this embodiment uses the thin gold layer 71 as a catalyst, and releases electrons after being oxidized by a reducing agent (such as: R(R'+2H++2e-), and the gold sulfite receives the electrons to reduce the gold to form the thick gold layer 72 (such as: Au(S2O3)23-+e-(Au+
[0061] 2S2O32-).
[0062] Embodiment 3
[0063] See also Figures 7 to 11 As shown, it is the third embodiment of the present application. Since this embodiment is similar to the above-mentioned embodiments 1 and 2, the same points of the above-mentioned embodiments will not be repeated, and the differences between this embodiment and the above-mentioned embodiments 1 and 2 are roughly described as follows:
[0064] In this embodiment, the power device base manufacturing method S200 includes (or implements) in sequence: a sputtering step S210, an electroplating step S220, a covering step S230, a patterning step S240, a first chemical plating step S250, and a second chemical plating step S260. This embodiment sequentially introduces the multiple steps S210-S260 of the power device base manufacturing method S200 below to produce a power device base 100, but the present application is not limited thereto.
[0065] For example, in other embodiments not shown in the present application, the above-mentioned multiple steps S210~S260 of the power component base manufacturing method S200 can be increased or decreased or the implementation order can be adjusted according to design requirements (for example, the second chemical plating step S260 can be omitted); or, the power component base 100 can be manufactured in a manner other than the power component base manufacturing method S200.
[0066] The sputtering step S210: Figure 7 and Figure 8 As shown, a plurality of electroplating portions 21 are respectively formed by sputtering on two plate surfaces 11 of a ceramic substrate 1. In this embodiment, the ceramic substrate 1 also has a plurality of through holes 12 connecting the two plate surfaces 11, and in the sputtering step S210, a tubular extension portion 22 is sputtered in each of the through holes 12 to connect the two electroplating portions 21 respectively located on the two plate surfaces 11.
[0067] The electroplating step S220: Figure 7 and Fig. 9 As shown, a plurality of the plated portions 21 are plated to form a conductive block 4 on each of the plated portions 21 , and the extension portion 22 located within each of the through holes 12 is plated to form a conductive column 8 that connects two corresponding conductive blocks 4 .
[0068] The covering step S230: Figure 7 and Fig.10 As shown, two insulating layers 3 are formed on the two board surfaces 11 of the ceramic substrate 1, and a plurality of conductive blocks 4 are embedded in the two insulating layers 3. Each insulating layer 3 may be made of a polyimide (PI) film, but the present application is not limited thereto.
[0069] The patterning step S240: Figure 7 and Fig.10As shown, a plurality of chemical plating tanks 32 are formed in the two insulating layers 3, and each of the chemical plating tanks 32 exposes one of the conductive blocks 4. In other words, the number of the plurality of chemical plating tanks 32 is less than the number of the plurality of conductive blocks 4 in this embodiment, so that a portion of the plurality of conductive blocks 4 is completely buried in the two insulating layers 3 and is not exposed outside any of the chemical plating tanks 32.
[0070] The first chemical plating step S250: Figure 7 and Fig.11 As shown, a chemical plating operation is performed in a plurality of the chemical plating tanks 32 to form a first chemical plating conductor E1 in each of the chemical plating tanks 32, which includes a first chemical plating layer 5 connected to the corresponding conductive block 4, a second chemical plating layer 6 connected to (or stacked on) the first chemical plating layer 5, and a third chemical plating layer 7 connected to (or stacked on) the second chemical plating layer 6. The third chemical plating layer 7 in each of the chemical plating tanks 32 is preferably coplanar with the outer surface 33 of the corresponding insulating layer 3, but is not limited thereto.
[0071] Furthermore, the material of the first chemical plating layer 5 is gold or nickel, the material of the second chemical plating layer 6 is palladium, and the material of the third chemical plating layer 7 is gold. It should be noted that the chemical plating operation of this embodiment (or the forming process and related parameters of the first chemical plating layer 5, the second chemical plating layer 6, and the third chemical plating layer 7) is roughly the same as that of the first or second embodiment, and will not be repeated here.
[0072] In summary, the power component base manufacturing method S200 in this embodiment can form multiple first chemically plated conductors E1 through the first chemically plated step S250, so that the multiple first chemically plated conductors E1 can each exist independently, and there is no need to form any connecting band (tie bar) between any two of the first chemically plated conductors E1, thereby effectively avoiding the generation of burrs on the power component base 100.
[0073] The second chemical plating step S260: at least one second chemical plating conductor E2 connecting at least two first chemical plating conductors E1 is formed on the outer surface 33 of each insulating layer 3. In this embodiment, a plurality of the second chemical plating conductors E2 are disposed on each insulating layer 3, and each of the second chemical plating conductors E2 is preferably in a sheet shape and connected to the outer surface 33 of the corresponding insulating layer 3.
[0074] Furthermore, each of the second chemically plated conductors E2 is distributed in multiple layers, just like the first chemically plated conductor E1. In more detail, each of the second chemically plated conductors E2 includes three chemically plated layers E2-1, E2-2, and E2-3 stacked in sequence on the corresponding insulating layer. In more detail, one of the chemically plated layers E2-1 is connected to the corresponding insulating layer 3 and the corresponding at least two first chemically plated conductors E1, and its material is gold or nickel; the material of the other chemically plated layer E2-3 away from the ceramic substrate 1 is gold and can be used for a power component (not shown in the figure, such as: a laser transmitter) to be installed thereon; and the material of the chemically plated layer E2-2 located in the center is palladium.
[0075] In other words, the forming process and related parameters of the three chemically plated layers E2-1, E2-2, and E2-3 of each of the second chemically plated conductors E2 are roughly the same as the first chemically plated layer 5, the second chemically plated layer 6, and the third chemically plated layer 7 in Example 1 or Example 2, and are not elaborated here.
[0076] It should be additionally explained that the second chemical plating step S260 can be selectively implemented according to actual needs; that is, the power component base manufacturing method S200 in this embodiment can further form a plurality of second chemical plating conductors E2 through the second chemical plating step S260, so that the plurality of second chemical plating conductors E2 can each exist independently, and there is no need to form any connecting strips between any two of the second chemical plating conductors E2, thereby effectively avoiding the generation of burrs on the power component base 100.
[0077] According to the above, this embodiment roughly describes the preferred implementation process of the power component base manufacturing method S200 with the above content, and then roughly introduces the specific structure of the power component base 100 manufactured by the power component base manufacturing method S200 from the perspective of structure. That is to say, some technical features of the power component base 100 can refer to the description of the power component base manufacturing method S200, but the present application is not limited thereto.
[0078] like Fig.11 As shown, the power component base 100 in this embodiment includes a ceramic substrate 1, a sputtered layer 2 formed on the ceramic substrate 1, a plurality of conductive blocks 4 and a plurality of conductive pillars 8 formed on the sputtered layer 2, two insulating layers 3 formed on opposite sides of the ceramic substrate 1, a plurality of first electroplated conductors E1 connected to the plurality of conductive blocks 4, and a plurality of second electroplated conductors E2 connected to the plurality of first electroplated conductors E1, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the second electroplated conductor E2 included in the power component base 100 may be at least one.
[0079] In this embodiment, the ceramic substrate 1 has two plate surfaces 11 located on opposite sides and a plurality of through holes 12 connecting the two plate surfaces 11. The sputtered layer 2 includes a plurality of electroplated portions 21 respectively formed on the two plate surfaces 11, and a plurality of extension portions 22 respectively located in the plurality of through holes 12. Each of the extension portions 22 is tubular and formed on the hole wall corresponding to the through hole 12, and the two ends of each of the extension portions 22 are respectively connected to the two electroplated portions 21 located on the two plate surfaces 11.
[0080] The plurality of conductive blocks 4 are respectively formed in the plurality of electroplating portions 21, the plurality of conductive pillars 8 are respectively located in the plurality of extension portions 22, and the two ends of each conductive pillar 8 are respectively connected to the corresponding two conductive blocks 4. It should be additionally noted that the sputtering layer 2 in this embodiment includes a titanium sputtering layer 2a covering the ceramic substrate 1, and a copper sputtering layer 2b covering the titanium sputtering layer 2a, but the present application is not limited thereto.
[0081] The two insulating layers 3 are respectively formed on the two board surfaces 11 of the ceramic substrate 1, and the plurality of conductive blocks 4 are embedded in the two insulating layers 3. The two insulating layers 3 are recessed with a plurality of chemical plating tanks 32 on two outer surfaces 33 away from each other, and each of the chemical plating tanks 32 exposes one conductive block 4.
[0082] A plurality of the first chemically plated conductors E1 are respectively formed in a plurality of the chemically plated tanks 32, and each of the first chemically plated conductors E1 is connected to (or formed on) one of the conductive blocks 4. Each of the first chemically plated conductors E1 includes a first chemically plated layer 5 connected to the corresponding conductive block 4, a second chemically plated layer 6 connected to the first chemically plated layer 5, and a third chemically plated layer 7 connected to the second chemically plated layer 6.
[0083] Furthermore, the third chemical plating layer 7 in each chemical plating tank 32 is coplanar with the outer surface 33 of the corresponding insulating layer 3. In addition, the first chemical plating layer 5 is made of gold or nickel, the second chemical plating layer 6 is made of palladium, and the third chemical plating layer 7 is made of gold.
[0084] A plurality of the second chemically plated conductors E2 are respectively formed on the outer surfaces 33 of the two insulating layers 3, and each of the second chemically plated conductors E2 is connected to at least two of the first chemically plated conductors E1 (the third chemically plated layer 7). It should be additionally noted that in other embodiments not shown in the present application, the plurality of the second chemically plated conductors E2 can be omitted, and the plurality of the first chemically plated conductors E1 are used to connect the power components.
[0085] Technical Effects of the Invention
[0086] In summary, the power component base and the manufacturing method thereof disclosed in the embodiments of the present application, by forming a conductive structure for installing the power component, enable the conductive block, the first chemical plating layer, the second chemical plating layer, and the third chemical plating layer to exist independently without forming any connecting strips, thereby effectively avoiding the generation of burrs on the power component base.
[0087] Furthermore, the power component base manufacturing method and the manufacturing method thereof can also form a plurality of the first chemically plated conductors so that the plurality of the first chemically plated conductors can each exist independently, thereby eliminating the need to form any connecting strips between any two of the first chemically plated conductors, thereby effectively avoiding the generation of burrs on the power component base.
[0088] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the patent scope of the present application. Therefore, all equivalent technical changes made using the description and drawings of the present application are included in the patent scope of the present application.
Claims
1. A method for manufacturing a power component base, characterized in that: The power component base manufacturing method comprises: A sputtering step: sputtering a surface of a ceramic substrate to form a sputtering layer; a patterning step: forming an insulating layer on the sputtered layer, the insulating layer and a portion of the sputtered layer together forming an electroplating tank; wherein the portion of the sputtered layer is defined as an electroplating portion; An electroplating step: electroplating the electroplating portion of the sputtering layer to form a conductive block in the electroplating tank; a removing step: removing the insulating layer and a portion of the sputtered layer so that the electroplating portion of the sputtered layer remains; and A chemical plating step: performing a chemical plating operation on the conductive block to sequentially form a first chemical plating layer connected to the ceramic substrate and covering the conductive block and the electroplating portion, a second chemical plating layer connected to the ceramic substrate and covering the first chemical plating layer, and a third chemical plating layer connected to the ceramic substrate and covering the second chemical plating layer; wherein the first chemical plating layer is made of gold or nickel, the second chemical plating layer is made of palladium, and the third chemical plating layer is made of gold and is used for mounting a power component thereon.
2. The method for manufacturing a power component base according to claim 1, characterized in that: In the sputtering step, the sputtering layer includes a titanium sputtering layer covering the plate surface and a copper sputtering layer covering the titanium sputtering layer; in the electroplating step, the conductive block is made of copper.
3. The method for manufacturing a power component base according to claim 1, characterized in that: The material of the first chemical plating layer is limited to nickel, and the thickness of the first chemical plating layer is greater than the thickness of the second chemical plating layer, and the thickness of the second chemical plating layer is greater than the thickness of the third chemical plating layer.
4. The method for manufacturing a power component base according to claim 3, characterized in that: The thickness of the first chemical plating layer is between 0.15 micrometers and 0.25 micrometers, the thickness of the second chemical plating layer is between 0.08 micrometers and 0.12 micrometers, and the thickness of the third chemical plating layer is between 0.05 micrometers and 0.07 micrometers.
5. The method for manufacturing a power component base according to claim 3, characterized in that: During the forming process of the third chemical plating layer in the chemical plating step: a thin gold layer is formed on the second chemical plating layer by immersion gold plating, and a thick gold layer is formed on the thin gold layer by self-catalytic gold plating, and its thickness is 4 to 6 times the thickness of the thin gold layer.
6. A power component base, characterized in that: The power component base comprises: a ceramic substrate; A sputtering layer is formed on the surface of the ceramic substrate, and the sputtering layer includes an electroplating portion; a conductive block formed on the electroplating portion; a first chemical plating layer, covering the conductive block and the electroplating portion, and the bottom edge of the first chemical plating layer is connected to the ceramic substrate; wherein the material of the first chemical plating layer is gold or nickel; a second chemical plating layer, covering the first chemical plating layer, and the bottom edge of the second chemical plating layer is connected to the ceramic substrate; wherein the material of the second chemical plating layer is palladium; and A third chemical plating layer covers the second chemical plating layer, and the bottom edge of the third chemical plating layer is connected to the ceramic substrate; wherein the third chemical plating layer is made of gold and is used for mounting a power component thereon.
7. The power component base according to claim 6, characterized in that: The sputtered layer includes a titanium sputtered layer covering the plate surface and a copper sputtered layer covering the titanium sputtered layer; wherein the conductive block is made of copper, and the conductive block is connected to the copper sputtered layer, and the first chemical plating layer is connected to the side edge of the titanium sputtered layer and the side edge of the copper sputtered layer.
8. The power component base according to claim 6, characterized in that: The material of the first chemical plating layer is limited to nickel, and the thickness of the first chemical plating layer is greater than the thickness of the second chemical plating layer, and the thickness of the second chemical plating layer is greater than the thickness of the third chemical plating layer.
9. The power component base according to claim 8, characterized in that: The thickness of the first chemical plating layer is between 0.15 micrometers and 0.25 micrometers, the thickness of the second chemical plating layer is between 0.08 micrometers and 0.12 micrometers, and the thickness of the third chemical plating layer is between 0.05 micrometers and 0.07 micrometers.
10. The power component base according to claim 8, characterized in that: The third chemical plating layer includes a thin gold layer covering the second chemical plating layer and a thick gold layer covering the thin gold layer, and the thickness of the thick gold layer is 4 to 6 times that of the thin gold layer.
11. A method for manufacturing a power component base, characterized in that: The power component base manufacturing method comprises: a sputtering step: sputtering on two surfaces of a ceramic substrate to form a plurality of electroplating portions; An electroplating step: electroplating the plurality of electroplating portions to form a conductive block on each of the electroplating portions; A covering step: forming two insulating layers on the two plate surfaces of the ceramic substrate respectively, and burying the plurality of conductive blocks in the two insulating layers; a patterning step: forming a plurality of chemical plating tanks on the two insulating layers, and each of the chemical plating tanks exposes one of the conductive blocks; and A first chemical plating step: performing a chemical plating operation in the plurality of chemical plating tanks to form a first chemical plating conductor in each of the chemical plating tanks, the conductor comprising a first chemical plating layer connected to the corresponding conductive block, a second chemical plating layer connected to the first chemical plating layer, and a third chemical plating layer connected to the second chemical plating layer; The material of the first chemical plating layer is gold or nickel, the material of the second chemical plating layer is palladium, and the material of the third chemical plating layer is gold.
12. The method for manufacturing a power component base according to claim 11, characterized in that: The third chemically plated layer located in each of the chemically plated tanks is coplanar with the outer surface of the corresponding insulating layer.
13. The method for manufacturing a power component base according to claim 12, characterized in that: The power component base manufacturing method further comprises a second chemical plating step after the first chemical plating step: forming at least one second chemical plating conductor connecting at least two of the first chemical plating conductors on the outer surface of each of the insulating layers.
14. The method for manufacturing a power component base according to claim 11, characterized in that: The ceramic substrate has a plurality of through holes connecting the two board surfaces; in the sputtering step, a tubular extension portion is sputtered in each through hole to connect the two electroplating portions respectively located on the two board surfaces; in the electroplating step, the extension portion located in each through hole is electroplated to form a conductive column connecting the corresponding two conductive blocks.
15. A power component base, characterized in that: The power component base comprises: A ceramic substrate having two surfaces located on opposite sides; a sputtering layer comprising a plurality of electroplating portions respectively formed on the two plate surfaces; A plurality of conductive blocks are respectively formed on the plurality of the electroplating portions; Two insulating layers are formed on the two surfaces of the ceramic substrate respectively, and a plurality of the conductive blocks are buried in the two insulating layers; wherein a plurality of chemical plating tanks are formed on the two insulating layers, and each of the chemical plating tanks exposes one of the conductive blocks; and A plurality of first chemically plated conductors are respectively formed in a plurality of the chemically plated tanks, and each of the first chemically plated conductors comprises: a first chemical plating layer, connected to the corresponding conductive block, and the material of the first chemical plating layer is gold or nickel; a second chemical plating layer connected to the first chemical plating layer, and the material of the second chemical plating layer is palladium; and A third chemical plating layer is connected to the second chemical plating layer, and the material of the third chemical plating layer is gold.
16. The power component base according to claim 15, characterized in that: The third chemically plated layer located in each of the chemically plated tanks is coplanar with the outer surface of the corresponding insulating layer.
17. The power component base according to claim 16, characterized in that: The power component base further includes a plurality of second chemically plated conductors, which are respectively formed on the outer surfaces of the two insulating layers, and each of the second chemically plated conductors is connected to at least two of the first chemically plated conductors.
18. The power component base according to claim 15, characterized in that: The ceramic substrate has a plurality of through holes connecting the two board surfaces, and the sputtered layer includes a plurality of extension portions respectively located in the plurality of through holes, each of the extension portions is tubular and connects the two electroplated portions respectively located in the two board surfaces; wherein the power component base includes a plurality of conductive columns respectively located in the plurality of extension portions, each of which connects the corresponding two conductive blocks.