Heating tray device having multilayer structure, method for manufacturing same, and semiconductor device

Abstract

The invention relates to a heating tray device with a multilayer structure, a manufacturing method thereof and semiconductor equipment. The heating tray device of the multi-layer structure comprises a substrate which comprises a first surface used for bearing a wafer and a second surface opposite to the first surface; an electrostatic electrode on the first surface of the substrate; the top dielectric layer is positioned on the first surface of the substrate and covers the electrostatic electrode; the electric heating component is positioned on the second surface of the substrate; and the protective layer is positioned on the second surface of the substrate and covers the electric heating component. The electrostatic electrode and the electric heating component are located on the same substrate, so that the number of the substrates is reduced, the structure of the heating tray device with the multilayer structure is simplified, the processing difficulty is correspondingly reduced, and the process cost is reduced; in addition, the heat conduction efficiency between the electric heating component and the wafer can be improved; in conclusion, the static electrode and the electric heating component are located on the same substrate, and the structure and performance of the hot carrying disc device with the multi-layer structure can be optimized.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor technology, and in particular to a multi-layer heating carrier device and a manufacturing method thereof, as well as semiconductor equipment. Background Art

[0002] Plate carriers are widely used in integrated circuit (IC) manufacturing, such as in plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD), etc., to carry wafers to prevent them from moving or misaligning during the process, provide RF bias to the wafers and control the temperature of the wafer surface.

[0003] In some semiconductor processes (such as ion beam scanning implantation processes), the physical properties of the wafer need to be changed by heating. In the prior art, a carrier device is usually used to heat the wafer. However, the existing heating carrier device has problems such as complex structure, high processing difficulty, and high cost. Therefore, in the prior art, the structure and performance of the heating carrier device still need to be optimized. Summary of the invention

[0004] The problem solved by the embodiments of the present invention is to provide a heating carrier device with a multi-layer structure and a manufacturing method thereof, as well as a semiconductor device, so as to optimize the structure and performance of the heating carrier device with a multi-layer structure.

[0005] To solve the above problems, an embodiment of the present invention provides a multi-layer structured heating carrier device, comprising: a substrate, the substrate comprising a first surface for supporting a wafer, and a second surface opposite to the first surface; an electrostatic electrode, located on the first surface of the substrate; a top dielectric layer, located on the first surface of the substrate and covering the electrostatic electrode; an electric heating component, located on the second surface of the substrate; and a protective layer, located on the second surface of the substrate and covering the electric heating component.

[0006] Correspondingly, an embodiment of the present invention further provides a semiconductor device, comprising: a heating carrier device of the multi-layer structure provided by an embodiment of the present invention.

[0007] Correspondingly, an embodiment of the present invention also provides a method for manufacturing a multi-layer structured heating carrier device, comprising: providing a substrate, the substrate comprising a first surface for supporting a wafer, and a second surface opposite to the first surface; forming an electrostatic electrode on the first surface of the substrate; after forming the electrostatic electrode, forming a top dielectric layer covering the electrostatic electrode on the first surface of the substrate; forming an electric heating component on the second surface of the substrate; after forming the electric heating component, forming a protective layer covering the electric heating component on the second surface of the substrate.

[0008] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0009] The multi-layer heating carrier device provided in an embodiment of the present invention includes an electrostatic electrode located on the first surface of the substrate, and an electric heating component located on the second surface of the substrate. The electrostatic electrode and the electric heating component are located on the same substrate, which reduces the number of substrates, simplifies the structure of the multi-layer heating carrier device, and correspondingly reduces the processing difficulty of the multi-layer heating carrier device, thereby reducing the process cost of manufacturing the multi-layer heating carrier device; in addition, the first surface of the substrate is used to carry the wafer, and the electrostatic electrode and the electric heating component are located on two opposite surfaces of the same substrate, which is also beneficial to reducing the longitudinal distance between the electric heating component and the first surface, and correspondingly can reduce the distance between the electric heating component and the wafer, thereby improving the heat conduction efficiency between the electric heating component and the wafer; in summary, by making the electrostatic electrode and the electric heating component on the same substrate, it is beneficial to optimize the structure and performance of the multi-layer heating carrier device.

[0010] The semiconductor device provided by the embodiment of the present invention simplifies the structure of the multi-layer heating carrier device of the semiconductor device by adopting the above-mentioned multi-layer heating carrier device, and correspondingly reduces the processing difficulty of the multi-layer heating carrier device of the semiconductor device, thereby reducing the process cost of manufacturing the multi-layer heating carrier device of the semiconductor device, and correspondingly reduces the process cost of manufacturing the semiconductor device; in addition, the first surface of the substrate is used to carry the wafer, and the electrostatic electrode and the electric heating component are located on two opposite surfaces of the same substrate, which is also beneficial to reduce the longitudinal distance between the electric heating component and the first surface, and correspondingly can reduce the distance between the electric heating component and the wafer, thereby improving the heat conduction efficiency between the electric heating component and the wafer; in summary, by locating the electrostatic electrode and the electric heating component on the same substrate, it is beneficial to optimize the structure and performance of the multi-layer heating carrier device, and correspondingly optimize the structure and performance of the semiconductor device provided with the heating carrier device.

[0011] In the manufacturing method of the multi-layer heating carrier device provided by an embodiment of the present invention, an electrostatic electrode is formed on the first surface of the substrate, and an electric heating component is formed on the second surface of the substrate. The electrostatic electrode and the electric heating component are located on the same substrate, which reduces the number of substrates, simplifies the structure of the multi-layer heating carrier device, and correspondingly reduces the processing difficulty of the multi-layer heating carrier device, thereby reducing the process cost of manufacturing the multi-layer heating carrier device; in addition, the first surface of the substrate is used to carry the wafer, and the electrostatic electrode and the electric heating component are located on two opposite surfaces of the same substrate, which is also beneficial to reduce the longitudinal distance between the electric heating component and the first surface, and correspondingly can reduce the distance between the electric heating component and the wafer, thereby improving the heat conduction efficiency between the electric heating component and the wafer; in summary, by locating the electrostatic electrode and the electric heating component on the same substrate, it is beneficial to optimize the structure and performance of the multi-layer heating carrier device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A schematic structural diagram of a multi-layer heating carrier device;

[0013] Figure 2 It is a schematic diagram of the exploded structure of an embodiment of a multi-layer heating carrier device of the present invention;

[0014] Figure 3 for Figure 2 A local enlarged view of area a;

[0015] Figure 4 for Figure 3 Partial cross-sectional view at dd1;

[0016] Figure 5 It is a schematic cross-sectional view of an embodiment of a multi-layer heating carrier device of the present invention;

[0017] Figure 6 yes Figure 5 A local enlarged view of area b;

[0018] Figure 7 It is a schematic diagram of the assembly structure of an embodiment of the heating carrier device with a multi-layer structure of the present invention after the first back air hole and the positioning component are assembled;

[0019] Figure 8 yes Figure 5 A partial enlarged view of an embodiment in area c;

[0020] Fig. 9 yes Figure 5 A partial enlarged view of another embodiment in area c;

[0021] Fig.10 yes Figure 5A partial enlarged view of another embodiment in area c;

[0022] Fig.11 It is a partial plan view of an electric heating component on the second surface side of a substrate of an embodiment of a multi-layer structure heating carrier device of the present invention;

[0023] Fig.12 yes Fig.11 Cross-sectional view at ee1;

[0024] Figures 13 to 42 It is a schematic structural diagram corresponding to each step in an embodiment of a method for manufacturing a multi-layer heating carrier device of the present invention. DETAILED DESCRIPTION

[0025] As can be seen from the background technology, the structure and performance of the multi-layer heating carrier device for heating wafers still need to be simplified. The reasons why the structure and performance of the multi-layer heating carrier device need to be simplified are analyzed in combination with a manufacturing method of the multi-layer heating carrier device.

[0026] refer to Figure 1 , Figure 1 The present invention is a schematic diagram of the structure of a multi-layer heating carrier device.

[0027] The multi-layer structure of the heating carrier device includes: a second substrate 100b, wherein the second substrate 100b has a third surface 101c; an electric heating component 120, which is located on the third surface 101c of the second substrate 100b; a second dielectric layer 112, which covers the third surface 101c and the electric heating component 120; a first dielectric layer 111, which is located on the second dielectric layer 112; a first substrate 100a, which is located on the first dielectric layer 111, and the first substrate 100a includes a first surface 101a facing the first dielectric layer 111, and a second surface 101b opposite to the first surface 101a; and an electrostatic electrode 110, which is located on the first surface 101a of the first substrate 100a.

[0028] Among them, the preparation method of the above-mentioned heating carrier device generally includes: providing a first substrate 100a and a second substrate 100b, the first substrate 100a includes a first surface 101a for carrying a wafer (not marked), and a second surface 101b opposite to the first surface 101a, and the second substrate 100b has a third surface 101c; forming an electrostatic electrode 110 on the first surface 101a of the first substrate 100a, and forming an electric heating component 120 on the third surface 101c of the second substrate 100b; forming a first dielectric layer 111 covering the second surface 101b; forming a second dielectric layer 112 covering the third surface 101c and the electric heating component 120; making the first dielectric layer 111 and the second dielectric layer 112 relatively arranged and bonded, and combining the first substrate 100a formed with the electrostatic electrode 110 and the second substrate 100b formed with the electric heating component 120 into a multi-layer structure of the heating carrier device 10.

[0029] Through research, it is found that the electrostatic electrode 110 and the electric heating component 120 need to be formed on different substrates respectively first, and then the two substrates respectively formed with the electrostatic electrode 110 and the electric heating component 120 are assembled together through the bonding of the first dielectric layer 111 and the second dielectric layer 112, so that the multi-layer heating carrier device 10 also has two substrates, thereby making the structure of the multi-layer heating carrier device 10 more complicated, and correspondingly making the manufacturing of the multi-layer heating carrier device 10 more difficult; moreover, there are the second dielectric layer 112, the first dielectric layer 111 and the first substrate 100a between the electric heating component 120 and the first surface 101a, which also easily leads to a larger distance between the wafer and the electric heating component 120, which is not conducive to improving the heat conduction efficiency between the electric heating component 120 and the wafer.

[0030] In order to solve the above technical problems, an embodiment of the present invention provides a multi-layer heating carrier device, comprising: a substrate, the substrate comprising a first surface for supporting a wafer, and a second surface opposite to the first surface; an electrostatic electrode, located on the first surface of the substrate; a top dielectric layer, located on the first surface of the substrate and covering the electrostatic electrode; an electric heating component, located on the second surface of the substrate; and a protective layer, located on the second surface of the substrate and covering the electric heating component.

[0031] The multi-layer heating carrier device provided in an embodiment of the present invention includes an electrostatic electrode located on the first surface of the substrate, and an electric heating component located on the second surface of the substrate. The electrostatic electrode and the electric heating component are located on the same substrate, which reduces the number of substrates, simplifies the structure of the multi-layer heating carrier device, and correspondingly reduces the processing difficulty of the multi-layer heating carrier device, thereby reducing the process cost of manufacturing the multi-layer heating carrier device; in addition, the first surface of the substrate is used to carry the wafer, and the electrostatic electrode and the electric heating component are located on two opposite surfaces of the same substrate, which is also beneficial to reducing the longitudinal distance between the electric heating component and the first surface, and correspondingly can reduce the distance between the electric heating component and the wafer, thereby improving the heat conduction efficiency between the electric heating component and the wafer; in summary, by making the electrostatic electrode and the electric heating component on the same substrate, it is beneficial to optimize the structure and performance of the multi-layer heating carrier device.

[0032] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0033] refer to Figures 2 to 4 , Figure 2 This is a schematic diagram of the exploded structure of an embodiment of a multi-layer heating carrier device of the present invention. Figure 3 for Figure 2 A partial enlarged view of area a. Figure 4 for Figure 3 In the local cross-sectional view at dd1, in this embodiment, the multi-layer structure of the heating carrier device includes: a substrate 300, the substrate 300 includes a first surface 300a for supporting the wafer, and a second surface 300b opposite to the first surface 300a; an electrostatic electrode 310, located on the first surface 300a of the substrate 300; a top dielectric layer 320, located on the first surface 300a of the substrate 300 and covering the electrostatic electrode 310; an electric heating component 340, located on the second surface 300b of the substrate 300; and a protective layer 350, located on the second surface 300b of the substrate 300 and covering the electric heating component 340.

[0034] The substrate 300 is used to carry a wafer (not shown) to support the wafer, thereby providing a process operation platform for heating treatment in some process steps (such as ion implantation, deposition or etching, etc.).

[0035] In addition, the substrate 300 is also used to provide a process platform for preparing the electrostatic electrode 310 and the electric heating component 340 .

[0036] The substrate 300 is used to provide a process platform for preparing the electrostatic electrode 310 and also to provide a process platform for preparing the electric heating component 340, thereby facilitating reducing the overall thickness of the multi-layer structure of the heating carrier device.

[0037] In this embodiment, the substrate 300 is used to form an electrostatic adsorption type carrier device. When the wafer is located on the first surface 300 a of the substrate 300 , the substrate 300 and the wafer are fixed by the electrostatic effect of the electrostatic electrode 310 .

[0038] In this embodiment, the substrate 300 includes a ceramic plate. Ceramics have the characteristics of high temperature resistance, corrosion resistance, wear resistance, and no static electricity, which makes it easy for the multi-layer structure of the heating carrier device to meet the design requirements. As an example, the material of the ceramic plate may include one or more of aluminum oxide, aluminum nitride, silicon carbide, boron nitride, zirconium oxide, and silicon oxide. In other embodiments, the material of the substrate may also be other materials with the characteristics of high temperature resistance, corrosion resistance, wear resistance, and no static electricity.

[0039] When powered on, the electrostatic electrode 310 generates an electrostatic attraction to adsorb and fix the wafer on the first surface 300 a of the substrate 300 .

[0040] It should be noted that the material of the electrostatic electrode 310 includes any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the electrostatic electrode can also be other suitable materials.

[0041] It should also be noted that the number of the electrostatic electrodes 310 is 1 or more (e.g., 2, 4, or 6). In other words, the multi-layered heating carrier device may include one or more electrostatic adsorption regions, wherein the electrostatic electrodes 310 of each electrostatic adsorption region may be respectively applied with corresponding electrical signals (e.g., voltage signals). As an example, the number of electrostatic adsorption regions is 6, and the number of electrostatic electrodes 310 is correspondingly 6.

[0042] In this embodiment, a groove 301 (such as Figure 4 As shown); the electrostatic electrode 310 is located in the groove 301.

[0043] The groove 301 is used to provide a spatial position for forming the electrostatic electrode 310. The electrostatic electrode 310 is located in the groove 301, which is conducive to reducing the distance between the electrostatic electrode 310 and the electric heating component 340, thereby further improving the effect of heat conduction efficiency between the electric heating component 340 and the wafer. Moreover, the electrostatic electrode 310 is located in the groove 301, which increases the contact area between the electrostatic electrode 310 and the substrate 300, which is correspondingly conducive to increasing the bonding strength between the electrostatic electrode 310 and the substrate 300.

[0044] The top dielectric layer 320 is used to protect the electrostatic electrode 310 and reduce the probability of the electrostatic electrode 310 being damaged (such as plasma corrosion, etc.), and by applying an electrical signal to the electrostatic electrode 310, positive charges or negative charges are induced on the top dielectric layer 320. The positive charges or negative charges on the surface of the top dielectric layer 320 respectively form a strong electric field force with the induced negative charges or positive charges on the surface of the wafer, so that the wafer is adsorbed in the electric field area of ​​the top dielectric layer 320.

[0045] It should be noted that the material of the top dielectric layer 320 is a ceramic material, such as aluminum oxide, aluminum nitride, silicon carbide, boron nitride, zirconium oxide, silicon oxide, etc.

[0046] Specifically, a convex portion (not shown) and mutually connected concave portions (not shown) are formed on the surface of the top dielectric layer 320 facing away from the first surface 300a. The convex portion is used for electrostatic attraction of the wafer, and the mutually connected concave portions are used for the flow of the inert gas, which is beneficial to improve the accuracy of wafer temperature control and also facilitates the smooth adsorption or release of the wafer on the multi-layer structure heating carrier device.

[0047] refer to Figure 6 , and combined with reference Figure 5 , Figure 6 yes Figure 5 In the partial enlarged view of area b, the multi-layered heating carrier device further includes: a back air hole 330 , which is located at the center of the substrate 300 and penetrates the substrate 300 and the top dielectric layer 320 .

[0048] The back air holes 330 are used to introduce an inert gas (such as helium) so that it is evenly dispersed on the first surface 300a of the substrate 300 of the multi-layer heating carrier device. The inert gas back blowing is used to achieve heat exchange between the wafer and the multi-layer heating carrier device, thereby achieving the purpose of regulating the wafer temperature.

[0049] The back air hole 330 is located at the center of the substrate 300 , which is beneficial for evenly distributing the inert gas to the first surface 300 a of the substrate 300 of the heating platen device with a multi-layer structure.

[0050] Specifically, the back air pores 330 include a first back air pore 331 and a second back air pore 332 that are interconnected. The first back air pore 331 is located on the side of the second surface 300b of the substrate 300 and is located in a partial thickness of the substrate 300. The second back air pores 332 penetrate the remaining thickness of the substrate 300 and the top dielectric layer 320 at the bottom of the first back air pore 331.

[0051] As an example, the aperture of the first back air hole 331 is Larger than the diameter of the second back air hole 332

[0052] Combined with reference Figure 7 , Figure 7 It is a schematic diagram of the assembly structure of an embodiment of the present invention after the first back air hole of the multi-layer heating carrier device is assembled with a positioning component. The first back air hole 331 is not only used as a channel for introducing inert gas, but also can be used as a positioning hole to position the multi-layer heating carrier device. When the multi-layer heating carrier device is assembled with other devices or the multi-layer heating carrier device is assembled into a semiconductor device, the hollow positioning component 335 is installed in the first back air hole 331.

[0053] Therefore, the back air hole 330 is located at the center of the substrate 300. When the substrate 300 is deformed due to temperature changes, the distances from each position on the same circumference to the back air hole 330 are relatively consistent. Larger than the diameter of the second back air hole 332 The first back air hole 331 provides a space for installing the positioning component 335 , and is conducive to providing the hollow positioning component 335 with space for introducing inert gas, thereby meeting the design requirements.

[0054] In other embodiments, the aperture of the first back air pore may be equal to the aperture of the second back air pore, or the aperture of the first back air pore may be smaller than the aperture of the second back air pore.

[0055] The electric heating component 340 generates heat when powered on, and is used to heat the carried wafer to a predetermined temperature.

[0056] The electrostatic electrode 310 and the electric heating component 340 are located on the same substrate 300, which reduces the number of substrates 300, simplifies the structure of the heating carrier device with a multi-layer structure, and correspondingly reduces the processing difficulty of the heating carrier device with a multi-layer structure, thereby reducing the process cost of manufacturing the heating carrier device with a multi-layer structure; in addition, the first surface 300a of the substrate 300 is used to carry the wafer, and the electrostatic electrode 310 and the electric heating component 340 are located on two opposite surfaces of the same substrate 300, which is also beneficial to reduce the longitudinal distance between the electric heating component 340 and the first surface 300a, and correspondingly can reduce the distance between the electric heating component 340 and the wafer, thereby improving the heat conduction efficiency between the electric heating component 340 and the wafer; in summary, by locating the electrostatic electrode 310 and the electric heating component 340 on the same substrate 300, it is beneficial to optimize the structure and performance of the heating carrier device with a multi-layer structure.

[0057] Specifically, the electric heating component 340 includes a heating wire. The heating wire has the characteristics of high temperature resistance, fast heating, long service life, stable resistance, small power deviation, etc., which makes it easy for the electric heating component to heat the carried wafer to a predetermined temperature with better effect. More specifically, the material of the heating wire includes: any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the heating wire can also be other suitable materials.

[0058] In this embodiment, the electric heating component 340 adopts a multi-temperature zone design, that is, the electric heating component 340 includes multiple temperature control areas whose temperatures can be controlled independently. For example, the electric heating component 340 includes two temperature control areas whose temperatures can be controlled independently, thereby realizing a dual-temperature zone design.

[0059] If the heat conduction conditions at various positions of the electric heating component 340 are different (for example, the heat conduction speed of the outer area is faster than that of the central area), it is easy to cause the temperature of various positions of the electric heating component 340 to be different. Therefore, the electric heating component 340 adopts a multi-temperature zone design, which is beneficial to improve the temperature uniformity of the electric heating component 340, thereby improving the temperature uniformity when heating the wafer. In other embodiments, according to actual needs, the electric heating component 340 may include more than two temperature control areas whose temperatures can be controlled separately, or may include only one temperature control area that controls the temperature.

[0060] It should be noted that the distribution of the temperature control areas on the substrate 300 can be set according to actual needs, for example, they can be arranged circumferentially or radially.

[0061] The protective layer 350 is used to protect the electric heating component 340, reduce the probability of the electric heating component 340 being damaged in subsequent process steps, and reduce the probability of the electric heating component 340 being damaged when the multi-layer heating carrier device is working, thereby correspondingly improving the service life of the multi-layer heating carrier device.

[0062] refer to Figures 8 to 10 , and combined with reference Figure 5 , Figure 8 yes Figure 5 A partial enlarged view of an embodiment in area c, Fig. 9 yes Figure 5 A partial enlarged view of another embodiment in region c, Fig.10 yes Figure 5 In the locally enlarged view of another embodiment of area c, in this embodiment, the multi-layer structure heating carrier device also includes: an external interconnection structure 360, which is embedded in the substrate 300 from the side of the second surface 300b and connected to the electrostatic electrode 310, and the surface of the external interconnection structure 360 ​​on the side of the second surface 300b is exposed.

[0063] The electrostatic electrode 310 is connected to an external circuit through the external interconnection structure 360 ​​, so that an electrical signal is applied to the electrostatic electrode 310 through the external circuit.

[0064] The first surface 300a of the substrate 300 is used to carry the wafer. Therefore, an external interconnection structure 360 ​​embedded in the substrate 300 and connected to the electrostatic electrode 310 is formed from the second surface 300b, which is convenient for reducing the difficulty of forming the external interconnection structure 360. Moreover, it is helpful to reduce the influence of the external interconnection structure 360 ​​on the layout of the first surface 300a, so as to better play the role of the electrostatic adsorption surface of the multi-layer structure heating carrier device. At the same time, the surface of the external interconnection structure 360 ​​located on the second surface 300b is exposed, which is convenient for the external circuit to be electrically connected to the external interconnection structure 360.

[0065] Specifically, the external interconnection structure 360 ​​includes a first sub-interconnection structure 361 connected to the electrostatic electrode 310 , and a second sub-interconnection structure 362 connected to the first sub-interconnection structure 361 .

[0066] As an example, the width w3 of the first sub-interconnect structure 361 is smaller than the width w4 of the second sub-interconnect structure 362. The width w3 of the first sub-interconnect structure 361 is smaller than the width w4 of the second sub-interconnect structure 362, that is, compared with the first sub-interconnect structure 361, the width w4 of the second sub-interconnect structure 362 is larger, which is conducive to increasing the surface area of ​​the second sub-interconnect structure 362, thereby facilitating the electrical connection between the external circuit and the second sub-interconnect structure 362, and correspondingly facilitating the electrical connection between the external circuit and the external interconnect structure 360.

[0067] In other embodiments, the width of the first sub-interconnect structure is greater than or equal to the width of the second sub-interconnect structure.

[0068] In one embodiment, Figure 8 As shown, the first sub-interconnect structure 361 and the second sub-interconnect structure 362 are both embedded in the substrate 300 , and the surface of the second sub-interconnect structure 362 is sunken into the second surface 300 b of the substrate 300 .

[0069] Or, if Fig. 9 As shown, in another embodiment, the first sub-interconnect structure 361 and the second sub-interconnect structure 362 are both embedded in the substrate 300 , and the second sub-interconnect structure 362 is flush with the second surface 300 b of the substrate 300 .

[0070] The surface of the second sub-interconnect structure 362 is sunken into the second surface 300 b of the substrate 300 , or is flush with the second surface 300 b of the substrate 300 , which is beneficial to reducing the material consumption of the external interconnect structure 360 ​​and saving process costs.

[0071] Or, if Fig.10 As shown, in yet another embodiment, the first sub-interconnect structure 361 is embedded in the substrate 300 , and the second sub-interconnect structure 362 is covered on the second surface 300 b of the substrate 300 .

[0072] By extending the second sub-interconnect structure 362 to cover the second surface 300 b of the substrate 300 , the second sub-interconnect structure 362 can play a role in rewiring, thereby improving the flexibility of the electrical connection between the external interconnect structure 360 ​​and the external circuit.

[0073] It should be noted that the second surface 300b of the substrate 300 has an electric heating component 340, and accordingly, the electric heating component 340 is arranged to avoid the external interconnection structure 360, so that the surface of the external interconnection structure 360 ​​located on the second surface 300b side is exposed. In addition, the possibility of mutual influence between the electrostatic electrode 310 and the electric heating component 340 is reduced. In addition, the second surface 300b of the substrate 300 also has a protective layer 350, and accordingly, the protective layer 350 is also arranged to avoid the external interconnection structure 360, so that the surface of the external interconnection structure 360 ​​located on the second surface 300b side is exposed by the protective layer 350.

[0074] It should also be noted that the material of the external interconnection structure 360 ​​includes any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the external interconnection structure can also be other suitable materials.

[0075] refer to Figure 11 to Figure 12 In this embodiment, the multi-layered heating carrier device further includes: a temperature sensor 370 fixed on the protective layer.

[0076] in, Fig.11 It is a partial plan view of an electric heating component on the second surface side of a substrate of an embodiment of a multi-layer structure heating carrier device of the present invention; Fig.12 yes Fig.11 Cross-sectional view at ee1.

[0077] It should be noted that in order to clearly show the structure of the temperature sensor, Fig.11 The protective layer is omitted. Fig.12 The electric heating components and protective layer are omitted.

[0078] The temperature sensor 370 is used to detect the temperature of the electric heating component 340 , so as to adjust the power of the electric heating component 340 according to the detected temperature.

[0079] Specifically, the temperature sensor 370 includes a thermal resistor. In other words, the temperature sensor 370 includes a temperature sensitive sensing element, which is a thermal resistor. The thermal resistor has the characteristics of simple structure, relatively stable, high measurement accuracy, and a relatively large measurable temperature range. The temperature sensor 370 includes a thermal resistor, which is conducive to improving the temperature control accuracy of the heating carrier device for adjusting the multi-layer structure. In other embodiments, the temperature sensor may also include other types of temperature sensitive sensing elements, such as a thermocouple.

[0080] It should be noted that the temperature sensor 370 further includes a connecting plate 380 for fixing the temperature sensor 370 on a surface on the side of the second surface 300 b of the substrate 300 .

[0081] As an example, the connecting plate 380 is detachably connected to the protective layer 350 and the substrate 300, that is, the temperature sensor 370 is detachably connected to the protective layer 350 and the substrate 300. It can be understood that the connecting plate 380 is a packaging structure of the temperature sensor 370, which is used to fix the temperature sensor 370 on the surface of the second surface 300b of the substrate 300. In other embodiments, the packaging structure can also be other structures that can fix the temperature sensor on the surface of the second surface of the substrate.

[0082] That is, the remaining components of the temperature sensor 370 except the connecting plate 380 are fixed on the surface of the connecting plate 380 facing away from the second surface 300 b of the substrate 300 .

[0083] The connecting plate 380 is detachably connected to the protective layer 350 and the substrate 300, so the temperature sensor 370 can be replaced or repaired by removing the connecting plate 380, which is conducive to reducing the probability of the electric heating component 340 being damaged during the replacement or repair of the temperature sensor 370, and is convenient for replacing or repairing the temperature sensor 370; and the remaining components of the temperature sensor 370 except the connecting plate 380 are fixed to the protective layer 350 through the connecting plate 380, which is also conducive to reducing the probability of the electric heating component 340 being damaged during the installation of the temperature sensor 370. In addition, the connection of the connecting plate 380 to the protective layer 350 and the substrate 300 also improves the installation firmness of the temperature sensor 370.

[0084] The remaining components of the temperature sensor 370 except the connecting plate 380 are fixed on the surface of the connecting plate 380 facing away from the second surface 300b of the substrate 300, which is beneficial to improve the bonding strength between the remaining components of the temperature sensor 370 except the connecting plate 380 and the connecting plate 380.

[0085] In one embodiment, the connecting plate 380 is detachably connected to the protective layer 350 and the substrate 300 by means of screws embedded in the protective layer 350, the connecting plate 380 and the substrate 300. In other embodiments, the connecting plate can also be detachably connected to the protective layer by means of rivets embedded in the protective layer, the connecting plate and the substrate.

[0086] It should also be noted that the number of the temperature sensors 370 is one or more. The number of the temperature sensors 370 is determined by the number of temperature control zones of the electric heating component 340. As an example, the electric heating component 340 adopts a dual temperature zone, that is, the electric heating component 340 has two temperature control zones; accordingly, the number of the temperature sensors 370 is two.

[0087] It should be further explained that each temperature sensor 370 includes a plurality of temperature measuring units (not shown). The temperature sensor 370 includes a plurality of temperature measuring units, which is conducive to improving the reliability of temperature measurement, thereby further improving the accuracy of temperature control of the multi-layer heating carrier device. As an example, the temperature sensor 370 includes two temperature measuring units.

[0088] Continue to refer Figure 2 In this embodiment, the multi-layered heating carrier device further includes: a mounting hole 390 that penetrates the top dielectric layer 320 and the substrate 300 and is arranged away from the electrostatic electrode 310 , the electric heating component 340 and the protective layer 350 .

[0089] The mounting holes 390 are used to mount the multi-layer heating carrier device on the semiconductor device. Specifically, the number of mounting holes 390 is multiple. The number of mounting holes 390 is multiple, which is conducive to improving the stability of the multi-layer heating carrier device when it is mounted on the semiconductor device. As an example, the number of mounting holes 390 is 6.

[0090] In order to ensure that the distances between the mounting holes 390 and the positioning holes are more consistent when the multi-layer heating carrier device is mounted on the semiconductor equipment, the plurality of mounting holes 390 are evenly distributed on the same circumference.

[0091] In this embodiment, the multi-layered heating carrier device further includes: a lifting hole (not shown) penetrating the top dielectric layer 320 and the substrate 300 , and avoiding the electrostatic electrode 310 , the electric heating component 340 and the protective layer 350 .

[0092] When releasing the wafer, due to the strong electrostatic attraction between the multi-layer heating carrier device and the wafer, the desorption time of the wafer is easily too long. The lifting device can lift the wafer through the lifting hole to reduce the desorption time of the wafer, which is beneficial to improve work efficiency.

[0093] Correspondingly, the present invention also provides a semiconductor device.

[0094] The semiconductor device comprises: a heating carrier device with a multi-layer structure provided by an embodiment of the present invention.

[0095] Combined with reference Figures 2 to 12 The multi-layered heating carrier device provided in the embodiment of the present invention includes an electrostatic electrode 310 located on the first surface 300 a of the substrate 300 , and an electric heating component 340 located on the second surface 300 b of the substrate 300 .

[0096] The electrostatic electrode 310 and the electric heating component 340 of the embodiment of the present invention are located on the same substrate, which reduces the number of substrates 300, simplifies the structure of the heating carrier device with a multi-layer structure, and correspondingly reduces the processing difficulty of the heating carrier device with a multi-layer structure, thereby reducing the process cost of manufacturing the heating carrier device with a multi-layer structure; in addition, the first surface 300a of the substrate 300 is used to carry the wafer, and the electrostatic electrode 310 and the electric heating component 340 are located on two opposite surfaces of the same substrate 300, which is also beneficial to reducing the longitudinal distance between the electric heating component 340 and the first surface 300a, and correspondingly can reduce the distance between the electric heating component 340 and the wafer, thereby improving the heat conduction efficiency between the electric heating component 340 and the wafer; in summary, by locating the electrostatic electrode 310 and the electric heating component 340 on the same substrate 300, it is beneficial to optimize the structure and performance of the heating carrier device with a multi-layer structure, and correspondingly optimize the structure and performance of the semiconductor device provided with a heating carrier device with a multi-layer structure.

[0097] For a specific description of the multi-layer structure of the heating carrier device, please refer to the detailed description of the aforementioned embodiment, which will not be repeated in this embodiment.

[0098] Here, the semiconductor equipment is equipment used for semiconductor process applications, for example, the semiconductor equipment includes etching equipment, coating equipment, heat treatment equipment or ion implantation equipment, etc. It is understandable that the semiconductor equipment is not limited to the above equipment, and can also be other semiconductor equipment with heating function. In a specific embodiment, the semiconductor equipment is an ion implantation equipment (for example, an ion implantation equipment suitable for high temperature ion implantation process).

[0099] Correspondingly, the present invention also provides a method for manufacturing a heating carrier device with a multi-layer structure. Figures 13 to 42 It is a schematic structural diagram corresponding to each step in an embodiment of a method for manufacturing a multi-layer heating carrier device of the present invention.

[0100] refer to Figures 13 to 16 , Fig.13 It is a schematic diagram of the three-dimensional structure of the substrate. Fig.14 for Fig.13 A partial enlarged view of area A. Fig.15 for Fig.14Partial cross-sectional view at DD1, Fig.16 for Fig.13 A cross-sectional view at FF1 is provided, wherein a substrate 500 is provided, and the substrate 500 comprises a first surface 500a for supporting a wafer, and a second surface 500b opposite to the first surface 500a.

[0101] The substrate 500 is used to carry a wafer (not shown) to support the wafer, thereby providing a process operation platform for heating treatment in some process steps (such as ion implantation, coating, heat treatment or etching, etc.).

[0102] In addition, the substrate 500 is also used to provide a process platform for the subsequent preparation of electrostatic electrodes and electric heating components. The substrate 500 is used to provide a process platform for the preparation of electrostatic electrodes and electric heating components, thereby facilitating the reduction of the overall thickness of the multi-layer structure of the heating carrier device.

[0103] In this embodiment, the substrate 500 is used to form an electrostatic adsorption type carrier device. When the wafer is located on the first surface 500a of the substrate 500, the substrate 500 and the wafer are fixed by the electrostatic effect of the electrostatic electrodes formed subsequently.

[0104] In this embodiment, the substrate 500 includes a ceramic plate. Ceramics have the characteristics of high temperature resistance, corrosion resistance, wear resistance, and no static electricity, which makes it easy for the subsequently formed multi-layer structure of the heating carrier device to meet the design requirements. As an example, the material of the ceramic plate may include one or more of aluminum oxide, aluminum nitride, silicon carbide, boron nitride, zirconium oxide, and silicon oxide. In other embodiments, the material of the substrate may also be other materials with the characteristics of high temperature resistance, corrosion resistance, wear resistance, and no static electricity.

[0105] In this embodiment, before forming the electrostatic electrode, the manufacturing method further includes: forming a groove 501 in the first surface 500 a of the substrate 500 .

[0106] The groove 501 is used to provide a spatial position for the subsequent formation of an electrostatic electrode. The groove 501 is formed in the first surface 500a of the substrate 500, and the electrostatic electrode is subsequently formed in the groove 501, which is conducive to reducing the distance between the electrostatic electrode and the electric heating component formed later, thereby further improving the effect of heat conduction efficiency between the electric heating component and the wafer. Moreover, the subsequent electrostatic electrode is located in the groove 501, which increases the contact area between the electrostatic electrode and the substrate 500, which is correspondingly conducive to increasing the bonding strength between the electrostatic electrode and the substrate 500.

[0107] refer to Figures 17 to 21In this embodiment, after providing the substrate 500 and before forming the electrostatic electrode and the electric heating component, the manufacturing method further includes: forming an external interconnection structure 560 passing through the substrate 500, and the surface of the external interconnection structure 560 located on the second surface 500b side is exposed.

[0108] in, Fig.17 for Fig.16 Schematic diagram of the structure after the opening is formed. Fig.18 for Fig.17 A partial enlarged view of area C. Fig.19 yes Fig.17 A schematic diagram of a partial structure of an embodiment after forming an external interconnection structure, Fig. 20 yes Fig.17 A schematic diagram of a partial structure of another embodiment after forming an external interconnection structure; Fig.21 yes Fig.17 A schematic diagram of a partial structure of another embodiment after forming an external interconnection structure.

[0109] The electrostatic electrodes formed subsequently are connected to the external circuit via the external interconnection structure 560 , so that an electrical signal is applied to the electrostatic electrodes via the external circuit.

[0110] The first surface 500a of the substrate 500 is used to carry the wafer. Before forming the electrostatic electrode, an external interconnection structure 560 that penetrates the substrate 500 is formed, which is convenient for reducing the difficulty of forming the external interconnection structure 560. Moreover, the surface of the external interconnection structure 560 located on the side of the second surface 500b is exposed, which is convenient for the external circuit to be electrically connected to the external interconnection structure 560. In addition, forming the external interconnection structure 560 before forming the electrostatic electrode can also effectively reduce the damage to the electrostatic electrode caused by the process of forming the external interconnection structure 560.

[0111] Specifically, the step of forming the external interconnect structure 560 includes: forming an opening 565 (such as Fig.18 An external interconnect structure 560 is formed in the opening 565 (as shown); Fig.19 , Fig. 20 or Fig.21 shown).

[0112] Firstly forming the opening 565 penetrating the substrate 500 and then forming the external interconnection structure 560 in the opening 565 can help to further reduce the difficulty of forming the external interconnection structure 560 .

[0113] In one embodiment, in the step of forming an opening 565 that penetrates the substrate 500, the opening 565 includes a first sub-opening 566 and a second sub-opening 567 that penetrate each other, the first sub-opening 566 is located between the second sub-opening 567 and the first surface 500a of the substrate 500, and the width W1 of the first sub-opening 566 is smaller than the width W2 of the second sub-opening 567.

[0114] Accordingly, in the step of forming the external interconnection structure 560 in the opening 565, the external interconnection structure 560 includes a first sub-interconnection structure 561 formed in the first sub-opening 566, and a second sub-interconnection structure 562 formed in the second sub-opening 567, and the surface of the second sub-interconnection structure 562 is sunken into the second surface 500b (such as Fig.19 ) or flush with the second surface 500b of the substrate 500 (as shown Fig. 20 shown);

[0115] The width W1 of the first sub-opening 566 is smaller than the width W2 of the second sub-opening 567 , that is, the width W3 of the first sub-interconnection structure 561 is smaller than the width W4 of the second sub-interconnection structure 562 .

[0116] The width W4 of the second sub-interconnection structure 562 is relatively large, which is conducive to increasing the surface area of ​​the second sub-interconnection structure 562, thereby facilitating the electrical connection between the external circuit and the second sub-interconnection structure 562, and correspondingly facilitating the electrical connection between the external circuit and the external interconnection structure 560. In addition, the surface of the second sub-interconnection structure 562 is sunken into the second surface 500b of the substrate 500 or is flush with the second surface 500b of the substrate 500, which is conducive to reducing the material consumption of the external interconnection structure 560 and saving process costs.

[0117] In other embodiments, the width of the first sub-opening is greater than or equal to the width of the second sub-opening. Accordingly, the width of the first sub-interconnection structure is greater than or equal to the width of the second sub-interconnection structure.

[0118] like Fig.21 As shown, in another embodiment, forming an external interconnection structure in the opening 565 may also include: forming an interconnection material (not shown) in the opening, the interconnection material also extending to cover the second surface 500b of the substrate 500, the interconnection material in the opening serving as a first sub-interconnection structure 561, the interconnection material extending to the second surface 500b serving as a second sub-interconnection structure 562, the second sub-interconnection structure 562 and the first sub-interconnection structure 561 forming an external interconnection structure 560. It is understood that, in this embodiment, the opening 565 may have a flat sidewall, that is, the sidewall of the opening 565 may not have a step portion.

[0119] By extending the second sub-interconnect structure 562 to cover the second surface 500 b of the substrate 500 , the second sub-interconnect structure 562 can play a role in rewiring, thereby improving the flexibility of the electrical connection between the external interconnect structure 560 and the external circuit.

[0120] It should be noted that the material of the external interconnection structure 560 includes any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the external interconnection structure can also be other suitable materials.

[0121] In this embodiment, the method of forming the external interconnection structure 560 in the opening includes sequentially performing a screen printing process and a sintering process. The screen printing process and the sintering process have the advantages of low cost, high productivity, and easy realization of large size. In other embodiments, the external interconnection structure can be formed by sequentially performing a coating process, an etching process, and a sintering process, or the external interconnection structure can be formed by sequentially performing a coating process and an etching process.

[0122] Continue to refer Fig.17 In this embodiment, in the step of forming the through opening 565, the manufacturing method also includes: at the center position of the substrate 500, forming a first back air hole 531 from one side of the second surface 500b of the substrate 500, and the first back air hole 531 is located in the partial thickness of the substrate 500; forming an initial mounting hole 598 from one side of the second surface 500b of the substrate 500, and the initial mounting hole 598 is located in the partial thickness of the substrate 500; forming an initial lifting hole (not shown) from one side of the second surface 500b of the substrate 500, and the initial lifting hole is located in the partial thickness of the substrate 500.

[0123] The first back air hole 531 provides a process basis for the subsequent formation of the back air hole. In the step of forming the opening 565, the first back air hole 531 is first formed in the substrate 500, and then the back air hole is formed, which is conducive to reducing the difficulty of forming the back air hole. Moreover, the first back air hole 531 is located at the center of the substrate 500, which also makes it easy for the back air hole formed subsequently to be located at the center of the substrate 500.

[0124] At the same time, the first back air hole 531 can also be used as a positioning hole to position the multi-layer structure of the heating carrier device, and the hollow positioning component is installed in the first back air hole 531. Therefore, the first back air hole 531 is located at the center of the substrate 300, and when the substrate 500 is deformed due to temperature changes, it is convenient to make the distances from various positions on the same circumference to the first back air hole 531 more consistent.

[0125] The initial mounting hole 598 provides a process basis for the subsequent formation of the mounting hole. In the step of forming the opening 565, the initial mounting hole 598 is first formed in the substrate 500, and then the mounting hole is formed, which is conducive to reducing the difficulty of forming the mounting hole.

[0126] Specifically, the number of initial mounting holes 598 is multiple. The number of initial mounting holes 598 is multiple, and the number of mounting holes formed subsequently is also multiple, which is conducive to improving the stability of the multi-layer heating carrier device when it is installed on the semiconductor device. As an example, the number of initial mounting holes 598 is 6.

[0127] In order to ensure that the distances between the mounting holes 590 and the positioning holes are more consistent when the multi-layer heating carrier device is mounted on the semiconductor equipment, the multiple initial mounting holes 598 are evenly distributed on the same circumference.

[0128] The initial lifting hole provides a process basis for the subsequent formation of the lifting hole. In the step of forming the opening 565, the initial lifting hole is first formed in the substrate 500, and then the lifting hole is formed, which is conducive to reducing the difficulty of forming the lifting hole.

[0129] It should be noted that, in the present embodiment, the first back air hole 531, the initial mounting hole 598 and the initial lifting hole are first formed in the substrate 500 of partial thickness, and various punching processes on the substrate 500 are performed as much as possible. At this time, the electrostatic electrode and the electric heating component have not yet been formed, which is beneficial to reduce the complexity of the manufacturing method and also helps to reduce or avoid the impact on the electrostatic electrode and the electric heating component.

[0130] It should also be noted that an electrostatic electrode is subsequently formed in the groove 501 , so the first back air hole 531 , the initial installation hole 598 and the initial lifting hole are all arranged away from the groove 501 , thereby reducing the impact on the electrostatic electrode.

[0131] In other embodiments, the first back air holes, the initial installation holes and the initial lifting holes may also be formed after the protective layer is formed.

[0132] refer to Figure 22 to Figure 25 , an electrostatic electrode 510 is formed on the first surface 500 a of the substrate 500 .

[0133] in, Fig. 22 yes Fig.15 A partial cross-sectional view after forming the electrostatic electrode. Fig.23 for Fig.19 Schematic diagram of the local structure after the electrostatic electrode is formed. Fig.24 for Fig. 20 Schematic diagram of the local structure after the electrostatic electrode is formed. Fig.25 for Fig.21 Schematic diagram of the local structure after the electrostatic electrode is formed.

[0134] When powered on, the electrostatic electrode 510 generates an electrostatic attraction to adsorb and fix the wafer on the first surface 500 a of the substrate 500 .

[0135] Specifically, in the step of forming the electrostatic electrode 510 , the electrostatic electrode 510 is formed in the groove 501 .

[0136] It should be noted that the material of the electrostatic electrode 510 includes any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the electrostatic electrode can also be other suitable materials.

[0137] It should also be noted that the number of the electrostatic electrodes 510 is 1 or more (e.g., 2, 4, or 6). In other words, the multi-layered heating carrier device may include one or more electrostatic adsorption regions, wherein the electrostatic electrodes 510 of each electrostatic adsorption region may be respectively applied with corresponding electrical signals (e.g., voltage signals). As an example, the number of electrostatic adsorption regions is 6, and the number of electrostatic electrodes 510 is correspondingly 6.

[0138] It is also necessary to explain that the electrostatic electrode 510 is also arranged to avoid the initial installation hole and the initial lifting hole.

[0139] In this embodiment, the method of forming the electrostatic electrode 510 includes sequentially performing a screen printing process and a sintering process. The screen printing process and the sintering process have the advantages of low cost, high productivity, and easy realization of large size. In other embodiments, the electrostatic electrode can be formed by sequentially performing a coating process, an etching process, and a sintering process, or the electrostatic electrode can be formed by sequentially performing a coating process and an etching process.

[0140] In this embodiment, in the step of forming the electrostatic electrode 510, the electrostatic electrode 510 is electrically connected to the external interconnection structure 560 (eg, Fig.23 , Fig.24 and Fig.25 shown).

[0141] refer to Figure 26 to Figure 29 After the electrostatic electrode 510 is formed, a top dielectric layer 520 covering the electrostatic electrode 510 is formed on the first surface 500 a of the substrate 500 .

[0142] in, Fig.26 for Fig. 22 A partial cross-sectional view after forming the top dielectric layer. Fig. 27 for Fig.23 Schematic diagram of the local structure after forming the top dielectric layer; Fig.28 for Fig.24 Schematic diagram of the local structure after forming the top dielectric layer; Fig.29 for Fig.25 Schematic diagram of the local structure after forming the top dielectric layer.

[0143] The top dielectric layer 520 is used to protect the electrostatic electrode 510 and reduce the probability of the electrostatic electrode 510 being damaged (such as plasma corrosion, etc.), and by applying an electrical signal to the electrostatic electrode 510, positive charges or negative charges are induced on the top dielectric layer 520. The positive charges or negative charges on the surface of the top dielectric layer 520 form a strong electric field force with the induced negative charges or positive charges on the surface of the wafer, so that the wafer is adsorbed in the electric field area of ​​the top dielectric layer 520.

[0144] It should be noted that the method of forming the top dielectric layer 520 includes a coating process, a sintering process, and the like.

[0145] It should also be noted that the material of the top dielectric layer 520 is a ceramic material, such as aluminum oxide, aluminum nitride, silicon carbide, boron nitride, zirconium oxide, silicon oxide, etc.

[0146] Specifically, a convex portion (not shown) and mutually connected concave portions (not shown) are formed on the surface of the top dielectric layer 520 facing away from the first surface 500a. The convex portion is used for electrostatic attraction of the wafer, and the mutually connected concave portions are used for the flow of the inert gas, which is beneficial to improve the accuracy of wafer temperature control and also facilitates the smooth adsorption or release of the wafer on the multi-layer structure heating carrier device.

[0147] refer to Figure 30 to Figure 31 , and combined with reference Fig. 20 In this embodiment, the manufacturing method further includes: forming a back air hole 530 penetrating the substrate 500 and the top dielectric layer 520 at the center position of the substrate 500 .

[0148] in, Fig.30 is Fig.17 Schematic diagram of the cross-sectional structure after forming the electrostatic electrode, the top dielectric layer and the back air hole; Fig.31 for Fig.30 A partial enlarged view of area B.

[0149] It should be noted that in order to clearly show the structure of the back pores, the electrostatic electrodes are omitted.

[0150] The back air holes 530 are used to introduce an inert gas (such as helium) so that it is evenly dispersed on the first surface 500a of the substrate 500 of the multi-layer heating carrier device. The inert gas back blowing is used to achieve heat exchange between the wafer and the multi-layer heating carrier device, thereby achieving the purpose of regulating the wafer temperature.

[0151] The back air hole 530 is located at the center of the substrate 300, which is beneficial for evenly dispersing the inert gas onto the first surface 500a of the substrate 500 of the multi-layer heating carrier device.

[0152] Specifically, in the step of forming the back air pores 530, the back air pores 530 include a first back air pore 531 and a second back air pore 532 which are interconnected, the first back air pore 531 being located on one side of the second surface 500b of the substrate 500 and being located in a partial thickness of the substrate 500, and the second back air pore 532 being located through the remaining thickness of the substrate 500 and the top dielectric layer 520 at the bottom of the first back air pore 531.

[0153] As an example, the aperture Φ1 of the first back air hole 531 is larger than the aperture Φ2 of the second back air hole 532 .

[0154] The aperture Φ1 of the first back air hole 531 is larger than the aperture Φ2 of the second back air hole 532, so that the first back air hole 531 provides a space for installing the positioning component, and is conducive to making the hollow positioning component provide space for the introduction of inert gas, thereby meeting the design requirements.

[0155] In other embodiments, the aperture of the first back air pore may be equal to the aperture of the second back air pore, or the aperture of the first back air pore may be smaller than the aperture of the second back air pore.

[0156] In a specific embodiment, the step of forming a back air hole 530 that passes through the substrate 500 and the top dielectric layer 520 includes: forming a first back air hole 531 from the side of the second surface 500b of the substrate 500, and the first back air hole 531 is located in a partial thickness of the substrate 500; correspondingly, the step of forming the back air hole 530 that passes through the substrate 500 and the top dielectric layer 520 also includes: forming a second back air hole 532 from the side of the second surface 500b of the substrate 500 through the first back air hole 531 and passing through the remaining thickness of the substrate 500 and the top dielectric layer 520 at the bottom of the first back air hole 531.

[0157] The thickness of the top dielectric layer 520 is usually small. First, the first back air hole 531 is formed from the second surface 500b of the substrate 500, and then the second back air hole 532 is formed to penetrate the remaining thickness of the substrate 500 and the top dielectric layer 520 at the bottom of the first back air hole 531, so that in the process of forming the second back air hole 532, the thickness penetrated is not easy to be too small, and the remaining thickness of the substrate 500 at the bottom of the first back air hole 531 can play a supporting role for the top dielectric layer 520, which is beneficial to reduce the probability of damage (for example, cracking) of the top dielectric layer 520 during the process of forming the second back air hole 532, thereby improving the quality of the second back air hole 532, and correspondingly improving the quality of the back air hole 530. At the same time, the second back air hole 532 penetrating the remaining thickness of the substrate 500 and the top dielectric layer 520 can be formed in one step, thereby simplifying the process of forming the second back air hole 532.

[0158] Furthermore, the second back air holes 532 are formed from the second surface 500 b of the substrate 500 via the first back air holes 531 , which is beneficial for improving the coaxiality of the first back air holes 531 and the second back air holes 532 .

[0159] In addition, a second back air hole 532 is formed through the first back air hole 531 to penetrate the remaining thickness of the substrate 500 and the top dielectric layer 520 at the bottom of the first back air hole 531, that is, the second back air hole 532 is continued to be formed by punching, which is conducive to accurately controlling the size of the second back air hole 532 and correspondingly reducing the probability of wasting the area of ​​the top dielectric layer 520.

[0160] In another specific embodiment, the step of forming a back air hole 530 that passes through the substrate 500 and the top dielectric layer 520 includes: forming a first back air hole 531 from the side of the second surface 500b of the substrate 500, and the first back air hole 531 is located in a partial thickness of the substrate 500; the step of forming the back air hole 530 that passes through the substrate 500 and the top dielectric layer 520 also includes: after forming the top dielectric layer 520, forming a second back air hole 532 that is connected to the first back air hole 531 from the side of the first surface 500a of the substrate 500, and the second back air hole 532 passes through the remaining thickness of the substrate 500 and the top dielectric layer 520 at the bottom of the first back air hole 531.

[0161] A second back air hole 532 is formed from the first surface 500a of the substrate 500 to communicate with the first back air hole 531, so that the second back air hole 532 is located at the center of the multi-layer heating carrier device, thereby achieving a better effect of evenly dispersing the inert gas on the first surface 500a of the substrate 500 of the multi-layer heating carrier device.

[0162] In another embodiment, the step of forming back air holes 530 that penetrate the substrate 500 and the top dielectric layer 520 includes: before forming the top dielectric layer 520, forming initial back air holes (not shown) that penetrate the substrate 500, the initial back air holes including first back air holes 531 and first initial holes (not shown) that are interconnected, the first back air holes 531 being located on one side of the second surface 500b of the substrate 500 and being located in a partial thickness of the substrate 500, the first initial hole penetrating the remaining thickness of the substrate 500 at the bottom of the first back air holes 531; in the process of forming the top dielectric layer 520, the top dielectric layer 520 is arranged to avoid the initial back air holes to form second initial holes (not shown) that are interconnected with the first initial holes in the top dielectric layer 520, the second initial holes and the first initial holes constitute second back air holes 532, and the second back air holes 532 and the first back air holes 531 constitute back air holes 530.

[0163] The top dielectric layer 520 is arranged away from the initial back air holes, and no additional processing is required on the top dielectric layer 520 to form through holes, thereby reducing the probability of damage to the top dielectric layer 520.

[0164] In other embodiments, in the process of forming the top dielectric layer, the top dielectric layer is not arranged to avoid the initial back air holes, that is, the top dielectric layer also seals the initial back air holes. Accordingly, after forming the top dielectric layer that seals the first initial holes, second initial holes that are connected to the first initial holes are formed in the top dielectric layer. The first initial holes and the second initial holes constitute second back air holes, and the second back air holes and the first back air holes constitute back air holes.

[0165] Continue to refer Fig.30 In this embodiment, the manufacturing method further includes: forming a mounting hole 590 penetrating the substrate 500 and the top dielectric layer 520 at the position of the initial mounting hole 598; and forming a lifting hole (not shown) penetrating the substrate 500 and the top dielectric layer 520 at the position of the initial lifting hole.

[0166] The mounting holes 590 are used to mount the multi-layered heating carrier device on the semiconductor equipment.

[0167] Accordingly, the number of the mounting holes 590 is also multiple. As an example, the number of the mounting holes 590 is also 6.

[0168] The plurality of initial mounting holes 598 are evenly distributed on the same circumference; correspondingly, the mounting holes 590 are also evenly distributed on the same circumference.

[0169] When releasing the wafer, due to the strong electrostatic attraction between the multi-layer heating carrier device and the wafer, the desorption time of the wafer is easily too long. The lifting device can lift the wafer through the lifting hole to reduce the desorption time of the wafer, which is beneficial to improve work efficiency.

[0170] It should be noted that the initial mounting hole 598 penetrates a portion of the thickness of the substrate 500, and the initial lifting hole also penetrates a portion of the thickness of the substrate 500, which is beneficial to reducing the amount of processing when forming the mounting hole 590 and the lifting hole, thereby reducing the probability of damage to the top dielectric layer 520.

[0171] It should also be noted that after the top dielectric layer 520 is formed, a mounting hole 590 penetrating the substrate 500 and the top dielectric layer 520 is formed at the position of the initial mounting hole 598 by punching, and a lifting hole penetrating the substrate 500 and the top dielectric layer 520 is formed at the position of the initial lifting hole, which is beneficial for accurately controlling the size of the mounting hole 590 and the lifting hole, and correspondingly reducing the probability of wasting the area of ​​the top dielectric layer 520.

[0172] refer to Figure 32 to Figure 35, an electric heating component 540 is formed on the second surface 500 b of the substrate 500 .

[0173] in, Fig.32 for Fig.26 A partial cross-sectional view after the electric heating component is formed, Fig.33 yes Fig. 27 A partial cross-sectional view after the electric heating component is formed, Fig.34 for Fig.28 A partial cross-sectional view after the electric heating component is formed, Fig.35 for Fig.29 A partial cross-sectional view after the electric heating element is formed.

[0174] The electric heating component 540 generates heat when powered on, which is used to heat the wafer carried thereon to a predetermined temperature.

[0175] The electrostatic electrode 510 and the electric heating component 540 are located on the same substrate 500, which reduces the number of substrates 500, simplifies the structure of the heating carrier device with a multi-layer structure, and correspondingly reduces the processing difficulty of the heating carrier device with a multi-layer structure, thereby reducing the process cost of manufacturing the heating carrier device with a multi-layer structure; in addition, the first surface 500a of the substrate 500 is used to carry the wafer, and the electrostatic electrode 510 and the electric heating component 540 are located on two opposite surfaces of the same substrate 500, which is also beneficial to reducing the longitudinal distance between the electric heating component 540 and the first surface 500a, and correspondingly can reduce the distance between the electric heating component 540 and the wafer, thereby improving the heat conduction efficiency between the electric heating component 540 and the wafer; in summary, by locating the electrostatic electrode 510 and the electric heating component 540 on the same substrate 500, it is beneficial to optimize the structure and performance of the heating carrier device with a multi-layer structure.

[0176] It should be noted that the electric heating component 540 is formed on the second surface 500b of the substrate 500. Figure 33 to Figure 35 The electric heating component 540 is arranged away from the external interconnection structure 560, so that the surface of the external interconnection structure 560 located on the second surface 500b is exposed. In addition, the possibility of mutual influence between the electrostatic electrode 510 and the electric heating component 540 is reduced.

[0177] It should also be noted that the electric heating component 540 is also arranged to avoid the mounting hole and the lifting hole.

[0178] Specifically, the electric heating component 540 includes a heating wire. The heating wire has the characteristics of high temperature resistance, fast heating, long service life, stable resistance, small power deviation, etc., which makes it easy for the electric heating component to heat the carried wafer to a predetermined temperature with better effect. More specifically, the material of the heating wire includes: any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or any alloy of tungsten, molybdenum, tantalum, titanium and platinum. In other embodiments, the material of the heating wire can also be other suitable materials.

[0179] In this embodiment, the method of forming the electric heating component 540 includes sequentially performing a screen printing process and a sintering process. The reason why the screen printing process and the sintering process are used to form the electric heating component 540 is similar to the reason why the screen printing process and the sintering process are used to form the electrostatic electrode 510, and will not be repeated again. In other embodiments, the coating process, the etching process and the sintering process may be sequentially performed to form the electric heating component, or the coating process and the etching process may be sequentially performed to form the electric heating component.

[0180] It should be noted that the electrostatic electrode 510 and the electric heating component 540 may be formed in the same step, or may be formed in different steps, respectively.

[0181] In this embodiment, the electric heating component 540 adopts a multi-temperature zone design, that is, the electric heating component 540 includes multiple temperature control areas whose temperatures can be controlled independently. For example, the electric heating component 540 includes two temperature control areas whose temperatures can be controlled independently, thereby realizing a dual-temperature zone design.

[0182] Since the heat conduction conditions at various positions of the electric heating component 540 are different (for example, the heat conduction speed of the outer area is faster than that of the central area), it is easy to cause the temperature of various positions of the electric heating component 540 to be different. The electric heating component 540 adopts a multi-temperature zone design, which is beneficial to improve the temperature uniformity of the electric heating component 540, thereby improving the temperature uniformity when heating the wafer. In other embodiments, according to actual needs, the electric heating component 540 may include more than two temperature control areas whose temperatures can be controlled separately, or may include only one temperature control area that controls the temperature.

[0183] It should be noted that the distribution of the temperature control areas on the substrate 500 can be set according to actual needs. For example, they can be arranged circumferentially or radially.

[0184] Combined with reference Figures 36 to 40 After the electric heating component 540 is formed, a protective layer 550 covering the electric heating component 540 is formed on the second surface 500 b of the substrate 500 .

[0185] in, Fig.36 yes Fig.32 A partial cross-sectional view after forming the protective layer. Fig.37 It is a schematic diagram of an exploded view of an embodiment of a method for manufacturing a multi-layered heating carrier device of the present invention after forming a protective layer. Fig.38 yes Fig.33 A partial cross-sectional view after forming the protective layer. Fig.39 yes Fig.34 A partial cross-sectional view after forming the protective layer. Fig.40 yes Fig.35 Partial cross-sectional view after forming the protective layer.

[0186] The protective layer 550 is used to protect the electric heating component 540, reduce the probability of damage to the electric heating component 540 in subsequent process steps, and reduce the probability of damage to the electric heating component 540 when the multi-layer heating carrier device is working, thereby correspondingly improving the service life of the multi-layer heating carrier device.

[0187] It should be noted that a protective layer 550 covering the electric heating component 540 is formed on the second surface 500b of the substrate 500. Figures 38 to 40 The protection layer 550 is disposed away from the external interconnection structure 560 , so that the surface of the external interconnection structure 560 located on the second surface 500 b is exposed by the protection layer 550 .

[0188] It should also be noted that the protective layer 550 is also arranged to avoid the mounting holes and the lifting holes.

[0189] In addition, this embodiment adopts mechanical processing to form the above-mentioned various openings and holes.

[0190] It should be further explained that the top dielectric layer 520 and the protective layer 550 may be formed in the same step, or may be formed in different steps, respectively.

[0191] refer to Figure 41 to Figure 42 In this embodiment, after forming the protection layer 550 , the manufacturing method further includes: fixing the temperature sensor 570 on the protection layer 550 .

[0192] in, Fig.41 1 is a partial plan view of an electric heating component on the second surface of a substrate in one embodiment of a multi-layered heating carrier device of the present invention. Fig.42 yes Fig.41 Schematic diagram of the structure at EE1.

[0193] It should be noted that in order to clearly show the structure of the temperature sensor, Fig.41 The protective layer is omitted. Fig.42 The electric heating components and protective layer are omitted.

[0194] The temperature sensor 570 is used to detect the temperature of the electric heating component 540, so as to adjust the power of the electric heating component 540 according to the detected temperature.

[0195] Specifically, the temperature sensor 570 includes a thermal resistor. In other words, the temperature sensor 570 includes a temperature sensitive sensing element, which is a thermal resistor. The thermal resistor has the characteristics of simple structure, relatively stable, high measurement accuracy, and a relatively large measurable temperature range. The temperature sensor 570 includes a thermal resistor, which is conducive to improving the temperature control accuracy of the heating carrier device for adjusting the multi-layer structure. In other embodiments, the temperature sensor may also include other types of temperature sensitive sensing elements, such as a thermocouple.

[0196] It should be noted that the temperature sensor 570 further includes a connecting plate 580 for fixing the temperature sensor 570 on a surface on the side of the second surface 500 b of the substrate 500 .

[0197] As an example, the connection plate 580 is detachably connected to the protective layer 550 and the substrate 500, that is, the temperature sensor 570 is detachably connected to the protective layer 550 and the substrate 500. It can be understood that the connection plate 580 is a packaging structure of the temperature sensor 570, which is used to fix the temperature sensor 570 on the surface of the second surface 300b of the substrate 500. In other embodiments, the packaging structure can also be other structures that can fix the temperature sensor on the surface of the second surface of the substrate.

[0198] That is, the remaining components of the temperature sensor 570 except the connecting plate 580 are fixed on the surface of the connecting plate 580 facing away from the second surface 500 b of the substrate 500 .

[0199] In the step of fixing the temperature sensor 570 on the protective layer 550, the remaining components of the temperature sensor 570 except the connecting plate 580 are fixed on the surface of the connecting plate 580 facing away from the second surface 500b of the substrate 500, so that the remaining components of the temperature sensor 570 except the connecting plate 580 are fixed to the protective layer 550 through the connecting plate 580.

[0200] The connecting plate 580 is detachably connected to the protective layer 550 and the substrate 500, so the temperature sensor 570 can be replaced or repaired by removing the connecting plate 580, which is conducive to reducing the probability of the electric heating component 540 being damaged during the replacement or repair of the temperature sensor 570, and is convenient for replacing or repairing the temperature sensor 570; and the remaining components of the temperature sensor 570 except the connecting plate 580 are fixed to the protective layer 550 through the connecting plate 580, which is also conducive to reducing the probability of the electric heating component 540 being damaged during the installation of the temperature sensor 570. In addition, the connection of the connecting plate 580 to the protective layer 550 and the substrate 500 also improves the installation firmness of the temperature sensor 570.

[0201] The remaining components of the temperature sensor 570 except the connecting plate 580 are fixed on the surface of the connecting plate 580 facing away from the second surface 500b of the substrate 500, which is beneficial to improve the bonding strength between the remaining components of the temperature sensor 570 except the connecting plate 580 and the connecting plate 580.

[0202] In one embodiment, the connecting plate 580 is detachably connected to the protective layer 550 and the substrate 500 by means of screws embedded in the protective layer 550, the connecting plate 580 and the substrate 500. In other embodiments, the connecting plate can also be detachably connected to the protective layer by means of rivets embedded in the protective layer, the connecting plate and the substrate.

[0203] In this embodiment, the number of the temperature sensors 570 is one or more. The number of the temperature sensors 570 is determined by the number of the temperature control zones of the electric heating component 540. As an example, the electric heating component 540 adopts a dual temperature zone, that is, the electric heating component 540 has two temperature control zones; accordingly, the number of the temperature sensors 570 is two.

[0204] In this embodiment, each temperature sensor 570 includes a plurality of temperature measuring units (not shown). The temperature sensor 570 includes a plurality of temperature measuring units, which is beneficial to improving the reliability of temperature measurement, thereby further improving the accuracy of temperature control of the multi-layer heating carrier device. As an example, the temperature sensor 570 includes two temperature measuring units.

[0205] It should be noted that in other embodiments, after forming the top dielectric layer and the protective layer, a lifting hole penetrating the top dielectric layer, the protective layer and the substrate, and a mounting hole penetrating the top dielectric layer, the protective layer and the substrate may be formed. It is understandable that after forming the protective layer, a lifting hole penetrating the top dielectric layer, the protective layer and the substrate, and a mounting hole penetrating the top dielectric layer, the protective layer and the substrate may be formed, and the protective layer does not need to avoid the lifting hole and the mounting hole.

[0206] It should also be noted that the multi-layered heating carrier device can be manufactured using the manufacturing method described in the previous embodiment, or other manufacturing methods. For the specific description of the multi-layered heating carrier device described in this embodiment, reference can be made to the corresponding description in the previous embodiment, and this embodiment will not be repeated here.

[0207] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A multi-layered heating plate device, characterized in that: include: A substrate, the substrate comprising a first surface for supporting the wafer, and a second surface opposite to the first surface; an electrostatic electrode, located on the first surface of the substrate; a top dielectric layer, located on the first surface of the substrate and covering the electrostatic electrode; An electric heating component is located on the second surface of the substrate; The protective layer is located on the second surface of the substrate and covers the electric heating component.

2. The heating plate device according to claim 1, characterized in that: A groove is formed in the first surface of the substrate; the electrostatic electrode is located in the groove.

3. The heating plate device according to claim 1, characterized in that: The heating platen device further comprises: a back air hole, which is located at the center of the substrate and penetrates the substrate and the top dielectric layer.

4. The heating plate device according to claim 3, characterized in that: The back air pores include a first back air pore and a second back air pore that are interconnected, the first back air pore is located on one side of the second surface of the substrate and is located in a partial thickness of the substrate, the second back air pore passes through the remaining thickness of the substrate at the bottom of the first back air pore and the top dielectric layer, and the aperture of the first back air pore is larger than the aperture of the second back air pore.

5. The heating plate carrier device according to claim 1, characterized in that: The heating platen device further comprises: an external interconnection structure embedded in the substrate from one side of the second surface and connected to the electrostatic electrode, and a surface of the external interconnection structure located on one side of the second surface is exposed.

6. The heating plate device according to claim 5, characterized in that: The external interconnect structure includes: a first sub-interconnect structure connected to the electrostatic electrode, and a second sub-interconnect structure connected to the first sub-interconnect structure; Wherein, the first sub-interconnection structure and the second sub-interconnection structure are both embedded in the substrate, and the surface of the second sub-interconnection structure is sunken into the second surface of the substrate; Alternatively, the first sub-interconnect structure and the second sub-interconnect structure are both embedded in the substrate, and the second sub-interconnect structure is flush with the second surface of the substrate; Alternatively, the first sub-interconnect structure is embedded in the substrate, and the second sub-interconnect structure covers the second surface of the substrate.

7. The heating plate carrier device according to claim 1, characterized in that: The heating plate device further comprises: a temperature sensor fixed on the protective layer.

8. The heating plate device according to claim 7, characterized in that: The temperature sensor includes a thermocouple or a thermal resistor.

9. The heating plate carrier device according to claim 1, characterized in that: The electric heating component comprises a heating wire, and the material of the heating wire comprises: any one of tungsten, molybdenum, tantalum, titanium, platinum and graphite, or an alloy of any multiple of tungsten, molybdenum, tantalum, titanium and platinum.

10. The heating plate carrier device according to claim 1, characterized in that: The substrate includes a ceramic plate, and a material of the ceramic plate includes one or more of aluminum oxide, aluminum nitride, silicon carbide, boron nitride, zirconium oxide, and silicon oxide.

11. A semiconductor device, characterized in that: The invention comprises a heating plate carrier device as claimed in any one of claims 1 to 10.

12. The semiconductor device according to claim 11, wherein The semiconductor equipment includes etching equipment, coating equipment, heat treatment equipment or ion implantation equipment.

13. A method for manufacturing a multi-layered heating carrier device, characterized in that: include: Providing a substrate, the substrate comprising a first surface for supporting a wafer, and a second surface opposite to the first surface; forming an electrostatic electrode on the first surface of the substrate; After forming the electrostatic electrode, forming a top dielectric layer covering the electrostatic electrode on the first surface of the substrate; forming an electric heating component on the second surface of the substrate; After the electric heating component is formed, a protection layer covering the electric heating component is formed on the second surface of the substrate.

14. The method for manufacturing a heating platen device according to claim 13, wherein: Before forming the electrostatic electrode, the manufacturing method further includes: forming a groove in the first surface of the substrate; In the step of forming the electrostatic electrode, the electrostatic electrode is formed in the groove.

15. The method for manufacturing a heating platen device according to claim 13, wherein: The method of forming the electrostatic electrode includes sequentially performing a coating process, an etching process and a sintering process, or sequentially performing a film plating process and an etching process, or sequentially performing a screen printing process and a sintering process; The electric heating component is formed by sequentially performing a coating process, an etching process and a sintering process, or sequentially performing a film plating process and an etching process, or sequentially performing a screen printing process and a sintering process.

16. The method for manufacturing a heating platen device according to claim 13, wherein: The manufacturing method further includes: forming a back air hole penetrating the substrate and the top dielectric layer at the center position of the substrate.

17. The method for manufacturing a heating platen device according to claim 16, wherein: In the step of forming the back air pores, the back air pores include a first back air pore and a second back air pore that are interconnected, the first back air pore is located on one side of the second surface of the substrate and is located in a partial thickness of the substrate, the second back air pore penetrates the remaining thickness of the substrate at the bottom of the first back air pore and the top dielectric layer, and the aperture of the first back air pore is larger than the aperture of the second back air pore.

18. The method for manufacturing a heating platen device according to claim 13, wherein: After providing the substrate and before forming the electrostatic electrode, the manufacturing method further includes: forming an external interconnection structure that passes through the substrate, wherein a surface of the external interconnection structure located on one side of the second surface is exposed; and in the step of forming the electrostatic electrode, the electrostatic electrode is electrically connected to the external interconnection structure.

19. The method for manufacturing a heating platen device according to claim 18, wherein: The method of forming the external interconnection structure includes sequentially performing a coating process, an etching process, and a sintering process, or sequentially performing a film plating process and an etching process, or sequentially performing a screen printing process and a sintering process.

20. The method for manufacturing a heating platen device according to claim 13, wherein: After forming the protective layer, the manufacturing method further includes: fixing a temperature sensor on the protective layer.

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