Temperature control system, process chamber and cleaning method

Abstract

The application discloses a temperature control system, a process chamber and a cleaning method, and relates to the field of semiconductors. The temperature control system is arranged on a supporting device in a process chamber, and comprises a temperature detecting element, a temperature adjusting element and a control element. The temperature detecting element is used for detecting the actual temperature of a temperature control area for controlling the temperature of a wafer surface. The temperature adjusting element is used for adjusting the temperature of the temperature control area. The control element is used for comparing the actual temperature of the temperature control area detected by the temperature detecting element with a preset process temperature of a cleaning medium sprayed on the wafer, and controlling the temperature adjusting element to adjust the temperature of the temperature control area when the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range. The application can at least solve the problems of poor cleaning effect and uneven temperature on the wafer.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor technology, and particularly relates to a wafer surface temperature control system, a process chamber and a cleaning method. BACKGROUND

[0002] In the integrated circuit manufacturing process, wet cleaning as a very important surface treatment method is used to clean various pollutants introduced in each process of chip manufacturing. In order to better remove the pollutants on the wafer surface in the chip manufacturing process, a high temperature (>=120 DEG C) cleaning process is usually used, such as a photoresist wet stripping process and a nitride wet removal process, which need to spray a high-temperature cleaning medium to the wafer surface to achieve the purpose of cleaning and removing. After the high-temperature cleaning medium is sprayed to the wafer surface, it will react with the medium film, photoresist or other substances to be treated on the wafer surface to form soluble substances, which are then removed by subsequent water to achieve the purpose of cleaning the wafer. In this process, the temperature of the cleaning medium is very important, and the decrease of the temperature will seriously affect the reaction efficiency.

[0003] However, in the actual process, after the cleaning medium is sprayed to the wafer surface, the temperature of the high-temperature cleaning medium will rapidly decrease after contacting the wafer surface due to the low temperature of the wafer, which will greatly affect the removal efficiency of the pollutants on the wafer surface on the one hand, and on the other hand, the local contact between the cleaning medium and the wafer within a certain time will cause the temperature difference between different areas on the wafer, affecting the wafer yield. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide a temperature control system, a process chamber and a cleaning method, which can at least solve the problems of poor cleaning effect and uneven temperature on the wafer.

[0005] In order to solve the above technical problems, the present application is implemented as follows:

[0006] The embodiments of the present application provide a wafer surface temperature control system, which is applied to a process chamber of a semiconductor process equipment, and the process chamber comprises a cavity and a carrying device arranged in the cavity and used for carrying a wafer.

[0007] The temperature control system is arranged in the carrying device and comprises a temperature detection element, a temperature adjusting element and a control element.

[0008] The temperature detection element is used for detecting the actual temperature of a temperature control area for regulating the temperature of the wafer surface, and the temperature adjusting element is used for adjusting the temperature of the temperature control area.

[0009] The control element is configured to compare the actual temperature of the temperature control area detected by the temperature detection element with a preset process temperature of the cleaning medium sprayed on the wafer, and control the temperature adjustment element to adjust the temperature of the temperature control area when the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range.

[0010] The application also provides a process chamber of a semiconductor process equipment, which comprises a cavity and a bearing device, a cleaning device and a temperature control system as described above arranged in the cavity respectively.

[0011] The bearing device is configured to bear the wafer.

[0012] The cleaning device has a spraying end for spraying the cleaning medium, which is configured to be arranged opposite to the bearing surface of the bearing device and spray the cleaning medium of the preset process temperature on the surface of the wafer to clean the wafer.

[0013] The temperature control system is arranged in the bearing device and is configured to control the temperature of the temperature control area for detecting and regulating the temperature of the surface of the wafer, so that the difference between the actual temperature of the temperature control area and the preset process temperature is within a first preset range.

[0014] The application also provides a cleaning method for the surface of a wafer, which comprises the following steps.

[0015] Detecting the actual temperature of the temperature control area for regulating the temperature of the surface of the wafer and comparing the actual temperature with a preset process temperature.

[0016] When the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, the temperature of the temperature control area is adjusted so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range.

[0017] In the embodiments of the application, the temperature control system can monitor and adjust the temperature of the temperature control area throughout the process, so as to adjust the temperature of the corresponding area of the wafer while spraying the cleaning medium on the wafer, so that the temperature of the wafer can be close to or equal to the preset process temperature of the cleaning medium, thereby effectively alleviating the problem that the large difference between the temperature of the wafer and the preset process temperature of the cleaning medium affects the process effect. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 The structure diagram of the process chamber disclosed in the embodiments of the application is shown;

[0019] Figure 2 The structure diagram of the temperature control system disclosed in the embodiments of the application is shown.

[0020] Figure 3 A top view of a process chamber disclosed by embodiments of the present application;

[0021] Figure 4 Structure schematic diagrams of a bearing device, a cleaning device, a temperature control system and a wafer disclosed by embodiments of the present application;

[0022] Figure 5 A flow chart of a temperature control method disclosed by embodiments of the present application;

[0023] Figure 6 A flow chart of cleaning multiple temperature zone units disclosed by embodiments of the present application.

[0024] Explanation of reference signs:

[0025] 100 - cavity;

[0026] 200 - bearing device; 210 - bearing disc; 220 - support assembly;

[0027] 300 - temperature control system; 310 - temperature detection element; 311 - temperature sensor; 320 - temperature adjustment element; 321 - heater; 322 - power regulator; 323 - temperature limiter; 324 - refrigerating device; 330 - control element; 340 - temperature control area; 341 - temperature zone unit;

[0028] 400 - cleaning device; 410 - spray arm; 420 - first driving mechanism; 430 - second driving mechanism;

[0029] 500 - recovery device; 510 - recovery cavity;

[0030] 610 - process area. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0032] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than that illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of a kind and are not limited in number, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the objects before and after are in an "or" relationship.

[0033] The embodiments of the present application will be described in detail below with reference to specific embodiments and application scenarios.

[0034] Reference Figures 1 to 6 The embodiments of the present application disclose a wafer surface temperature control system 300 applied to a process chamber of a semiconductor process equipment, wherein the process chamber comprises a cavity 100 and a carrying device 200 arranged in the cavity 100 and used for carrying a wafer, and the temperature control system 300 is arranged on the carrying device 200 and used for controlling the temperature of the wafer carried by the carrying device 200.

[0035] The disclosed temperature control system 300 comprises a temperature detection element 310, a temperature adjusting element 320 and a control element 330. The temperature detection element 310 is used for detecting the actual temperature of a temperature control area 340 for regulating the temperature of the wafer surface, the temperature adjusting element 320 is used for adjusting the temperature of the temperature control area 340, and the control element 330 can receive the temperature signal detected by the temperature detection element 310 and process the temperature signal, so as to control the temperature adjusting element 320 to adjust the temperature of the temperature control area 340, and further adjust the temperature of the corresponding area on the wafer through the temperature control area 340, so that the wafer surface temperature meets the actual process requirement.

[0036] The control element 330 is used for comparing the actual temperature of the temperature control area 340 detected by the temperature detection element 310 with the preset process temperature of the cleaning medium sprayed to the wafer, and in the case that the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, the control element 330 controls the temperature adjusting element 320 to adjust the temperature of the temperature control area 340, so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range.

[0037] Exemplarily, the first preset temperature difference range can be defined by the temperature difference according to the actual process requirement, for example, -0.5℃ ~ +0.5℃ can be defined as the standard of temperature consistency, that is, the first preset temperature difference range can be -0.5℃ ~ +0.5℃, of course, it can also be other degree range, which is not limited here.

[0038] Based on the above settings, the embodiments of the present application can monitor and adjust the temperature of the temperature control area 340 through the temperature control system 300, so as to adjust the temperature of the corresponding area of the wafer while spraying the cleaning medium on the wafer, so that the temperature of the wafer can be close to or equal to the preset process temperature of the cleaning medium, thereby effectively alleviating the problem that the process effect is affected by the large difference between the temperature of the wafer and the preset process temperature of the cleaning medium.

[0039] In the embodiments of the present application, the temperature control system 300 is arranged on the bearing surface of the bearing device 200, and the wafer can be supported by the support assembly 220 above the bearing surface and arranged opposite to the temperature control system 300. For example, the surface of the wafer can be in contact with the surface of the temperature control system 300, in which case the heat transfer between the temperature control system 300 and the wafer is in the form of heat conduction. Of course, there can also be a certain gap between the surface of the wafer and the surface of the temperature control system 300, in which case the heat transfer between the temperature control system 300 and the wafer is in the form of heat radiation.

[0040] Based on the above, the temperature control area 340 and the surface of the wafer can be in contact or spaced apart, so as to transmit heat between the temperature control system 300 and the wafer. It should be noted that the surface of the wafer can be provided with a plurality of process areas 610, so as to process the wafer in the plurality of process areas 610 respectively. In addition, the plurality of process areas 610 can be arranged corresponding to the temperature control area 340 respectively, so as to realize temperature detection and adjustment of each process area 610 through the temperature control area 340. For example, when the wafer is subjected to a cleaning process, the surface of the wafer can be provided with a plurality of cleaning areas, and the cleaning effect of each cleaning area can be realized by spraying cleaning medium on each cleaning area.

[0041] In some embodiments, the temperature control area 340 can be divided into a plurality of temperature zone units 341, which are arranged in sequence from the center to the edge of the bearing device 200, and are arranged corresponding to the plurality of process areas 610 respectively for processing the wafer, so that each temperature unit can detect and adjust the temperature of the corresponding process area 610.

[0042] It should be noted that the division of the temperature zone units 341 can be based on process requirements and combined with specific process procedures (for example, in the cleaning process, combined with the position of the cleaning medium spraying end passing through the wafer surface, etc.) and the hardware conditions of the temperature control system, so as to ensure that the temperature difference between the divided temperature zone units 341 meets the process requirements. Taking the cleaning process as an example, the division form of the plurality of temperature zone units 341 has a corresponding relationship with the actual movement position of the cleaning medium spraying end. At the position where the spraying end moves to, the temperature control system 300 will be correspondingly controlled and changed, so as to adjust according to the change of the cleaning process.

[0043] Exemplarily, each temperature zone unit 341 can have a circular ring shape, and the plurality of temperature zone units 341 are sequentially sleeved from inside to outside. In addition, the temperature control area 340 can be divided into a plurality of temperature units, for example, 3, 5, 8, 10, etc. The specific division number and division standard can be determined according to actual process requirements.

[0044] Further, the temperature control system 300 can include a plurality of temperature detection elements 310 and a plurality of temperature adjustment elements 320, wherein the plurality of temperature detection elements 310 are respectively arranged in the plurality of temperature units to detect the temperature of the plurality of process areas 610 respectively arranged in the plurality of temperature zone units 341; and the plurality of temperature adjustment elements 320 are respectively arranged in the plurality of temperature zone units 341 to adjust the temperature of the plurality of process areas 610 respectively arranged in the plurality of temperature zone units 341.

[0045] In order to make the temperature of each process area 610 meet the process requirements, the temperature of each temperature zone unit 341 needs to be controlled. Specifically, the control element 330 is used to control the corresponding temperature adjustment element 320 to control the temperature of the corresponding temperature zone unit 341 according to the local temperature of the corresponding temperature zone unit 341 detected by each temperature detection element 310, so that the difference between the local temperature of any temperature zone unit 341 and the preset process temperature is within the first preset temperature difference range.

[0046] Exemplarily, under the temperature control of the temperature control system 300, the temperature difference between any two temperature zone units 341 does not exceed 0.5°C, and at the same time, the temperature of each temperature zone unit 341 is basically consistent with the actual process temperature.

[0047] Based on the above setting, each temperature zone unit 341 can be respectively provided with an independent temperature detection element 310 and a temperature adjustment element 320, and each temperature zone unit 341 will be adjusted in temperature according to the process setting temperature and the process condition, such as heating power adjustment or refrigeration power adjustment, etc.

[0048] In the process, different process areas 610 of the wafer can be processed, and in the process state, the process area 610 being processed can be quickly temperature-regulated to ensure that the temperature of the corresponding process area 610 in the process state can quickly meet the process requirements; in addition, other process areas 610 not being processed can be slowly temperature-regulated to facilitate subsequent process preparation.

[0049] Based on the above, in the embodiments of the present application, the control element 330 can also be used to control the local temperature of the temperature control area 340 corresponding to any process area 610 of the wafer being processed according to the first temperature control system parameter, and control the local temperature of the temperature zone unit 341 corresponding to the process area 610 not being processed according to the second temperature control system parameter. Exemplarily, the first temperature control system parameter and the second temperature control system parameter can both be the power of the temperature adjusting element 320, and the temperature changing speed is changed by changing the power, so as to meet the process requirements. The first temperature control system parameter can be greater than the second temperature control system parameter, so as to quickly temperature-regulate the temperature control area 340 corresponding to the process area 610 being processed.

[0050] In order to improve the uniformity of temperature control of the wafer process area 610, the temperatures between the multiple temperature control areas 340 corresponding to the multiple process areas 610 can be close or equal, so as to ensure the uniformity of the overall surface temperature of the wafer.

[0051] Based on the above, the control element 330 in the embodiments of the present application is also used to control the local temperature of the corresponding temperature zone unit 341 by the temperature adjusting element 320 when the difference between the local temperatures of any two temperature zone units 341 exceeds the second preset temperature difference range, so that the difference between the local temperatures of any two temperature zone units 341 is within the second preset temperature difference range. In this way, the temperatures between any two temperature zone units 341 can be basically equal, the temperatures of the multiple process areas 610 corresponding to the multiple temperature units respectively can be basically equal, and the uniformity of the overall surface temperature of the wafer can be ensured.

[0052] In some embodiments, the temperature detecting element 310 can include at least one temperature sensor 311. Exemplarily, the temperature sensor 311 can be one or more. When the temperature sensor 311 is multiple, the multiple temperature sensors 311 can be arranged in a circumferential interval in the temperature control area 340, so as to expand the temperature detection area and improve the temperature detection accuracy to a certain extent.

[0053] In addition, the temperature adjusting element 320 can include at least one of a heater 321 and a cooler 324, and the temperature adjusting element 320 can be used to increase or decrease the temperature of the temperature control area 340 so that the temperature of the temperature control area 340 meets the requirements.

[0054] Exemplarily, the heater 321 is responsible for increasing the temperature, and can use an LED, infrared, resistance wire, etc. to heat, and the heater 321 is also electrically connected with the control element 330, such as a communication connection, etc., so as to realize accurate control of the heating temperature, heating time, heating power, etc. according to different process requirements.

[0055] The cooler 324 is responsible for decreasing the temperature, and can use cooling water, alcohol, liquid nitrogen, liquid helium, etc. with refrigeration function to realize, and the cooler 324 is also electrically connected with the control element 330, such as a communication connection, etc., so as to realize accurate control of the refrigeration temperature, refrigeration time, refrigeration power, etc. according to different process requirements.

[0056] When the temperature detecting element 310 includes multiple sensors, in addition to being arranged in the temperature control area 340, it can also be arranged in the heater 321 and the cooler 324, so as to track and monitor the current temperature of the heater 321 and the cooler 324 in real time.

[0057] In order to avoid the heater 321 from overheating and causing danger, the temperature control system 300 can also include a temperature limiting controller 323, which is triggered when the temperature of the heater 321 exceeds a certain range, so as to cut off the power supply of the heater 321 and ensure safety.

[0058] In addition, the embodiment of the present application can also edit the process recipe (such as a cleaning recipe, etc.) required by the process through the host computer software, and the content mainly includes preset process temperature, process steps, process time, etc. parameters, the host computer software is connected with the control element 330 through a certain way, and then the host computer sends the process recipe to the controller, and the controller processes the communication with the host computer, and also establishes communication with the temperature detecting element 310, the temperature adjusting element 320, etc.

[0059] When the process starts, the control element 330 can determine the current situation of the temperature control system 300 through a certain algorithm according to the preset process temperature, process steps, process time, etc. parameters in the received process recipe, combined with the temperature of the temperature control area 340, the temperature of the heater 321 and the temperature of the cooler 324 tracked and fed back by the temperature detecting element 310, so as to output a control signal to the temperature adjusting element 320, so as to adjust the temperature of the temperature control area 340 according to the difference between the actual temperature of the temperature control area 340 (i.e. the actual temperature of the temperature control area 340) and the target temperature (i.e. the preset process temperature), and then realize real-time and stable monitoring and temperature adjustment of the temperature control area 340.

[0060] Based on the temperature control system 300, the application further discloses a process chamber of a semiconductor process equipment, which comprises a cavity 100, a bearing device 200, a cleaning device 400 and the temperature control system 300 arranged in the cavity 100 respectively.

[0061] The cavity 100 is a basic mounting component, which can provide a containing space and a mounting base for the bearing device 200, the cleaning device 400 and the temperature control system 300, and can also provide a relatively isolated environment for the wafer cleaning process.

[0062] The bearing device 200 is used for bearing the wafer. For example, the bearing device 200 can comprise a bearing disc 210, which is used for bearing the wafer and rotating the wafer. In addition, the bearing disc 210 can be provided with a support assembly 220, which can support the wafer and keep the wafer in a horizontal state. For example, the support assembly 220 can comprise a plurality of support columns, which are arranged at the edge regions of the bearing disc 210 along the circumference of the bearing disc 210, so as to support the wafer and ensure the horizontal degree of the wafer. In addition, the bearing disc 210 can be provided with a clamping assembly, which is used for clamping the wafer to prevent the wafer from falling off or deviating when the wafer rotates with the bearing disc 210. For example, the clamping assembly can comprise a clamping jaw, a limiting groove, a limiting protrusion and the like.

[0063] The cleaning device 400 has a spraying end for spraying a cleaning medium, which is arranged opposite to the bearing surface of the bearing device 200 and used for spraying the cleaning medium at a preset process temperature to the surface of the wafer to clean the wafer. In some embodiments, the cleaning device 400 can further comprise a first driving mechanism 420 and a second driving mechanism 430. The first driving mechanism 420 is connected with the spraying end and used for driving the spraying end to rotate. The second driving mechanism 430 is connected with the first driving mechanism 420 and used for driving the first driving mechanism 420 and the spraying end to lift. Based on this, the relative position between the spraying end and each region of the wafer can be changed, and the distance between the spraying end and the wafer can be changed, so that the cleaning medium at a certain temperature can be sprayed to different positions and different heights on the surface of the wafer.

[0064] In some embodiments, the cleaning device 400 comprises a spraying arm 410 and the first driving mechanism 420. The spraying arm 410 is connected with the first driving mechanism 420, and the first driving mechanism 420 is used for driving the spraying arm 410 to move in a first plane, so as to change the relative position between the spraying end of the spraying arm 410 and the wafer, wherein the first plane is parallel to the bearing surface of the bearing device 200.

[0065] The second driving mechanism 430 is configured to drive the first driving mechanism 420 and the spray arm 410 to move in a first direction to change the distance between the spray end of the spray arm 410 and the wafer surface, wherein the first direction is perpendicular to the bearing surface of the bearing device 200.

[0066] The temperature control system 300 is arranged on the bearing device 200 and is configured to control the temperature of the temperature control area 340 to detect and control the temperature of the wafer surface, so that the actual temperature of the temperature control area 340 is within a first preset temperature difference range from the preset process temperature.

[0067] For example, the cross-sectional area of the temperature control system 300 can be less than or equal to the cross-sectional area of the bearing device 200 to facilitate installation. In addition, the temperature control system 300 and the bearing device 200 can be fixedly connected or detachably connected, for example, by bolt connection, plug-in connection, clamping connection, welding, bonding, riveting, etc. Of course, other ways can also be used, which are not limited here.

[0068] In addition to the above structure, the process chamber can also include a recovery device 500 arranged in the cavity 100 and surrounding the bearing device 200 to facilitate the collection of the cleaning medium flowing out of the bearing device 200, prevent the cleaning medium from splashing to the inner wall of the cavity 100 to cause pollution, and the collected cleaning medium can be discharged to a specific place through the recovery device 500 to prevent pollution.

[0069] For example, the recovery device 500 can include a recovery cavity 510 surrounding the bearing device 200 to facilitate the collection of the cleaning medium.

[0070] Based on the above arrangement, under the control of the temperature control system 300, the actual temperature of the temperature control area 340 can be ensured to be substantially the same as the preset process temperature, so that the temperature of the wafer surface can be substantially the same as the temperature of the cleaning medium. In this case, when the cleaning medium is used to clean the wafer, the temperature of the cleaning medium can be effectively prevented from decreasing after contacting the wafer and during the process, which can improve the removal efficiency of the cleaning medium on the wafer surface pollutants while ensuring the temperature of the cleaning medium, and can also alleviate the problem that the local contact between the cleaning medium and the wafer causes temperature difference between different areas on the wafer, thereby affecting the yield of the wafer.

[0071] In addition, the temperature control system 300 acts on the whole process of the wafer cleaning process, and the temperature control system 300 and the cleaning process can be kept in synchronous control, and always in working state to maintain the stability of the wafer temperature during the whole process.

[0072] In the embodiment of the present application, the specific working process of the temperature control system 300 is as follows:

[0073] During the process, the temperature control system 300 keeps communicating with the host computer at all times and acts on the whole process. Specifically, before the process, the control element 330 will compare the received process recipe information (mainly including process temperature, process steps, process time, etc.) with the current detected information. Taking the process temperature as an example, the control element 330 will compare the received preset process temperature with the actual temperature of the current temperature control area 340, and then output instructions to the power regulator 322 (such as a heating power regulator, a refrigeration power regulator, etc.) of the temperature adjusting element 320, so that the actual temperature of the current temperature control area 340 reaches or approaches the preset process temperature in the process recipe, avoiding that the actual temperature of the temperature control area 340 deviates too much from the preset process temperature in the recipe and affects the normal process.

[0074] When the first process area 610 of the wafer is processed, the temperature zone unit A corresponding to the first process area 610 will adjust the temperature control system parameters (such as the power parameters of the temperature adjusting element 320, etc.) of the temperature zone unit A at this time to X1 and the temperature control system parameters of the other temperature zone units 341 to Y11 according to the preset process temperature at this time and the actual temperature feedback by the temperature zone unit A, so as to reach the required temperature of the process.

[0075] When the second process area 610 of the wafer is processed, the temperature zone unit B corresponding to the second process area 610 will adjust the temperature control system parameters (such as the power parameters of the temperature adjusting element 320, etc.) of the temperature zone unit B at this time to X2 according to the preset process temperature at this time and the actual temperature feedback by the temperature zone unit B, and similarly, in order to ensure the consistency of the temperature of the whole temperature control area 340 and thus the consistency of the temperature of the wafer, the temperature control system parameters of the other temperature zone units 341 also need to be adjusted according to the actual situation, for example, the temperature control system parameters of the temperature zone unit A are adjusted to Y12, and in addition, the temperature control system parameters of the other temperature zone units 341 are adjusted to Y22, so as to ensure a suitable wafer surface temperature and ensure that the temperature of each area at this time remains consistent. In this way, the process is performed on each process area 610 of the wafer.

[0076] Based on the above process, the closed-loop temperature control system 300 can effectively avoid the reduction of the wafer surface temperature during the process, and the independent temperature control of each part of the temperature control area 340 and the synchronous control with the process can ensure the uniformity of the temperature of each area of the wafer surface, and thus ensure the consistency of each part of the wafer surface after the wafer is processed, which is conducive to improving the process effect and ensuring the process yield.

[0077] It should be noted that the above process can be a process of cleaning the wafer by using a high-temperature (such as ≥120℃) cleaning medium.

[0078] Of course, the wafer can also be cleaned by using a non-high-temperature cleaning medium. Specifically, when the wafer surface is sprayed with the non-high-temperature cleaning medium, the temperature control system 300 can also adjust the parameters of the temperature control system 300 to a suitable value according to the preset process temperature at this time and the actual temperature of the temperature control area 340, so as to ensure that the wafer surface is in a suitable process temperature range.

[0079] The embodiments of the present application also disclose a wafer surface cleaning method, and the disclosed cleaning method comprises:

[0080] detecting the actual temperature of the temperature control area 340 for regulating the temperature of the wafer surface, and comparing the actual temperature with the preset process temperature of the cleaning medium;

[0081] In the case where the difference between the actual temperature and the preset process temperature exceeds the first preset temperature difference range, the temperature of the temperature control area 340 is controlled and adjusted, so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range.

[0082] Exemplarily, the first preset temperature difference range can be defined according to the actual process requirement, for example, -0.5℃ to +0.5℃ can be defined as the standard of temperature consistency, that is, the first preset temperature difference range can be -0.5℃ to +0.5℃, and of course, it can also be other degree ranges, which are not limited here.

[0083] Based on the above setting, the cleaning method in the embodiments of the present application uses the closed-loop temperature control system 300 to track and adjust the temperature of the temperature control area 340 throughout the process, and adjusts the temperature of the wafer surface through the temperature control area 340, so as to effectively avoid the temperature drop of the cleaning medium after contacting the wafer and during the process, thereby effectively alleviating the problem that the wafer temperature is greatly different from the preset process temperature and affects the process effect.

[0084] In some embodiments, the temperature control area 340 can be divided into a plurality of temperature zone units 341, and the plurality of temperature zone units 341 are respectively arranged corresponding to a plurality of process areas 610 for processing corresponding wafers; wherein the cleaning method further comprises:

[0085] detecting the local temperature of each temperature zone unit 341, and comparing the local temperature of any temperature zone unit 341 with the preset process temperature;

[0086] In the case where the difference between the local temperature of any temperature zone unit 341 and the preset process temperature exceeds the first preset temperature difference range, the local temperature of the corresponding temperature unit is controlled and adjusted, so that the difference between the local temperature of any temperature zone unit 341 and the preset process temperature is within the first preset temperature difference range.

[0087] The above steps can make the actual temperatures of the plurality of temperature control units respectively close to the preset process temperature, thereby ensuring the uniformity of the temperature of the temperature control region 340, and further ensuring the uniformity of the temperature of the plurality of process regions 610 respectively corresponding to the plurality of temperature zone units 341, that is, ensuring the uniformity of the overall surface temperature of the wafer.

[0088] In some embodiments, the cleaning method further comprises:

[0089] When the wafer is processed in any process region 610, the local temperature of the temperature zone unit 341 corresponding to the process region 610 is controlled and adjusted according to the first temperature control system parameter, and the local temperature of the temperature zone unit 341 corresponding to the process region 610 which does not process the wafer is controlled and adjusted according to the second temperature control system parameter.

[0090] Based on the above steps, the independent temperature control of each temperature zone unit 341 can be realized, the interference between the temperature zone units 341 can be avoided, and the temperature control efficiency and accuracy can be improved.

[0091] In some embodiments, the cleaning method further comprises:

[0092] Comparing the local temperatures of any two temperature zone units 341;

[0093] In the case that the difference between the local temperatures of any two temperature zone units 341 exceeds the second preset temperature difference range, the local temperature of the corresponding temperature zone unit 341 is controlled and adjusted so that the difference between the local temperatures of any two temperature zone units 341 is within the second preset temperature difference range.

[0094] Based on the above steps, the temperatures of the plurality of temperature zone units 341 can be ensured to be substantially consistent, so as to prevent the case that the wafer yield is affected due to the excessively large temperature difference after the process.

[0095] Optionally, detecting the actual temperature of the temperature control region 340 for regulating the surface temperature of the wafer comprises:

[0096] Detecting the actual temperatures of a plurality of positions in the temperature control region 340 and the actual temperature of the temperature adjusting element 320 for adjusting the temperatures of the plurality of positions in the temperature control region 340.

[0097] Based on the above steps, the plurality of positions in the temperature control region 340 can be measured and controlled in temperature, so as to ensure the consistency of the temperature of the entire temperature control region 340.

[0098] Optionally, the temperature adjusting element 320 can include at least one of a heater 321 and a cooler 324; wherein the temperature of the temperature control region 340 is controlled and adjusted, comprising:

[0099] The heating power of the heater 321 is controlled, or the refrigeration efficiency of the refrigerator 324 is controlled, or the heating power of the heater 321 and the refrigeration efficiency of the refrigerator 324 are simultaneously controlled.

[0100] It should be noted that the cleaning method of the wafer surface in the embodiment of the present application corresponds to the process chamber of the semiconductor process equipment, that is, the cleaning method can be applied to the process chamber, and thus the specific scheme of the cleaning method and the specific scheme of the process chamber can be mutually referenced.

[0101] In the embodiment of the present application, when the wafer surface is cleaned by using a high-temperature (for example, ≥120℃) cleaning medium, the temperature is a very important cleaning parameter, and in order to ensure the cleaning effect, the cleaning medium needs to maintain a high cleaning temperature during the entire cleaning process. However, in the related art, after the high-temperature cleaning medium contacts the wafer surface, the temperature is usually obviously reduced, and the temperature difference between different regions of the wafer is large.

[0102] The closed-loop temperature control system 300 is adopted in the embodiment of the present application, the temperature of the wafer surface is adjusted during the process, the temperature control system parameters are adjusted in real time, the temperature of each region of the wafer surface is ensured to be consistent with the preset process temperature, and the partition control can also ensure the consistency of the temperature of each region of the wafer surface. Therefore, through the regulation and control of the closed-loop temperature control system 300 on the temperature of the wafer surface in the embodiment of the present application, on the one hand, the wafer can be heated to a temperature close to the required temperature of the high-temperature cleaning medium in the process, so as to avoid the temperature drop of the cleaning medium, and on the other hand, the temperature stability of the wafer surface during the cleaning process can be well maintained, and the cleaning yield is improved.

[0103] In addition, the closed-loop temperature control system 300 in the embodiment of the present application acts on the entire cleaning process, is divided into a plurality of temperature zone units 341 according to the spraying area of the wafer cleaning device 400, each temperature zone unit 341 performs closed-loop temperature control according to the preset process temperature, the movement position of the spraying arm 410 of the cleaning device 400, the wafer surface temperature of the spraying area, and the like, adjusts the temperature control system parameters, ensures the temperature stability of the cleaning medium, realizes the consistency of the temperature of each region of the wafer surface, and ensures the cleaning effect.

[0104] The specific process of the cleaning method for cleaning the wafer surface in the embodiment of the present application is as follows:

[0105] In the process, before the cleaning device 400 sprays the cleaning medium, the control element 330 will compare the received cleaning process recipe information (mainly including cleaning temperature, cleaning steps, cleaning time, etc.) with the temperature information received by the current temperature detection module, and then output instructions to the power regulator 322 (such as a heating power regulator, a refrigeration power regulator, etc.) of the temperature adjusting element 320, so that the temperature of the current wafer reaches or approaches the set temperature of the cleaning medium in the cleaning process recipe (i.e., the preset process temperature), avoiding the temperature drop of the cleaning medium after being sprayed onto the wafer surface.

[0106] When the spray arm 410 of the cleaning device 400 starts to spray the cleaning medium in the first process area 610, the temperature zone unit A corresponding to the first process area 610 will adjust the temperature control system parameters (such as the power parameters of the temperature adjusting element 320, etc.) of the temperature zone unit A at this time to X1 and the temperature control system parameters of the other temperature zone units 341 to Y11 according to the preset cleaning process temperature at this time and the actual temperature feedback by the temperature zone unit A, so as to achieve the temperature required by the process.

[0107] When the second process area 610 of the wafer is sprayed with the cleaning medium, the temperature zone unit B corresponding to the second process area 610 will adjust the temperature control system parameters (such as the power parameters of the temperature adjusting element 320, etc.) of the temperature zone unit B at this time to X2 according to the preset process temperature at this time and the actual temperature feedback by the temperature zone unit B, and similarly, in order to ensure the consistency of the temperature at each place in the temperature control area 340 and thus the consistency of the temperature of the wafer, the temperature control system parameters of the other temperature zone units 341 also need to be adjusted according to the actual situation, such as the temperature control system parameters of the temperature zone unit A being adjusted to Y12, in addition, the temperature control system parameters of the other temperature zone units 341 being adjusted to Y22, so as to ensure a suitable wafer surface temperature and ensure the consistency of the temperature of each area at this time. In this way, each process area 610 of the wafer is processed.

[0108] Based on the above process, the closed-loop temperature control system 300 can effectively avoid the temperature drop of the cleaning medium after contacting the wafer surface, and the independent temperature control of each place in the temperature control area 340 and the synchronous control with the cleaning medium spraying process can ensure the uniformity of the temperature of each area of the wafer surface, and thus ensure the consistency of each place of the wafer surface after cleaning, which is conducive to improving the process effect and ensuring the process yield.

[0109] Of course, the wafer can also be cleaned by using a non-high-temperature cleaning medium. Specifically, when the wafer surface is sprayed with the non-high-temperature cleaning medium, the temperature control system 300 can also adjust the parameters of the temperature control system 300 to a suitable value according to the preset process temperature at this time and the actual temperature of the temperature control area 340, so as to ensure that the wafer surface is in a suitable process temperature range.

[0110] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the specific embodiments described above, and the specific embodiments described above are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope protected by the claims.

Claims

1. A temperature control system for a wafer surface, applied in a process chamber of a semiconductor process equipment, the process chamber comprising a cavity and a supporting device arranged in the cavity and used for carrying a wafer, characterized in that, The temperature control system is arranged on the bearing device and comprises a temperature detecting element, a temperature adjusting element and a control element; The temperature detecting element is configured to detect an actual temperature of a temperature control area for regulating the temperature of the wafer surface, the temperature adjusting element is configured to adjust the temperature of the temperature control area, and the temperature control area is divided into a plurality of temperature zone units, each of which is arranged corresponding to a plurality of process areas for processing the wafer. The control element is configured to compare the actual temperature of the temperature control area detected by the temperature detecting element with a preset process temperature of a cleaning medium sprayed on the wafer, and control the temperature adjusting element to adjust the temperature of the temperature control area when the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, so that the difference between the actual temperature and the preset process temperature is within the first preset temperature difference range. The control element is further configured to control the local temperature of the temperature zone unit corresponding to any of the process areas for processing the wafer according to a first temperature control system parameter, and control the local temperature of the temperature zone unit corresponding to the process area which does not process the wafer according to a second temperature control system parameter.

2. The temperature control system of claim 1, wherein, The plurality of temperature zone units are arranged from the center to the edge of the bearing device. The temperature control system comprises a plurality of temperature detecting elements and a plurality of temperature adjusting elements, and the plurality of temperature detecting elements are arranged corresponding to the plurality of temperature zone units respectively, and the plurality of temperature adjusting elements are arranged corresponding to the plurality of temperature zone units respectively. The control element is configured to control the corresponding temperature adjusting element to control the temperature of the corresponding temperature zone unit according to the local temperature of the corresponding temperature zone unit detected by each temperature detecting element, so that the difference between the local temperature of any temperature zone unit and the preset process temperature is within the first preset temperature difference range.

3. The temperature control system of claim 2, wherein, The control element is further configured to control the temperature adjusting element to adjust the local temperature of the corresponding temperature zone unit when the difference between the local temperatures of any two temperature zone units exceeds a second preset temperature difference range, so that the difference between the local temperatures of any two temperature zone units is within the second preset temperature difference range.

4. The temperature control system of claim 2 or 3, wherein, The temperature detecting element comprises at least one temperature sensor. And / or, the temperature adjusting element comprises at least one of a heater and a cooler.

5. A process chamber of a semiconductor process apparatus, characterized by, The process chamber comprises a cavity, a bearing device, a cleaning device and the temperature control system of any one of claims 1-4 arranged in the cavity respectively; The bearing device is configured to carry a wafer; The cleaning device has a spraying end for spraying a cleaning medium, and the spraying end is arranged opposite to a bearing surface of the bearing device and is configured to spray the cleaning medium at a preset process temperature on the surface of the wafer to clean the wafer; The temperature control system is arranged on the bearing device and is configured to control the temperature of a temperature control area for regulating the temperature of the wafer surface, so that the difference between the actual temperature of the temperature control area and the preset process temperature is within a first preset temperature difference range.

6. A method of cleaning a wafer surface, characterized by, The cleaning method comprises: detecting an actual temperature of a temperature control area for regulating the temperature of the wafer surface, and comparing the actual temperature with a preset process temperature of the cleaning medium; in the case where the difference between the actual temperature and the preset process temperature exceeds a first preset temperature difference range, controlling the temperature of the temperature control area to make the difference between the actual temperature and the preset process temperature within the first preset temperature difference range; wherein, the temperature control area is divided into a plurality of temperature zone units, and a plurality of the temperature zone units are respectively arranged corresponding to a plurality of process areas for performing processes on the wafer, when performing a process on the wafer in any of the process areas, the local temperature of the temperature zone unit corresponding to any of the process areas is controlled and adjusted according to a first temperature control system parameter, and the local temperature of the temperature zone unit corresponding to the process area not performing the process on the wafer is controlled and adjusted according to a second temperature control system parameter.

7. The cleaning method according to claim 6, wherein The cleaning method further comprises: detecting the local temperature of each of the temperature zone units, and comparing the local temperature of any of the temperature zone units with the preset process temperature; in the case where the difference between the local temperature of any of the temperature zone units and the preset process temperature exceeds the first preset temperature difference range, controlling and adjusting the local temperature of the corresponding temperature zone unit to make the difference between the local temperature of any of the temperature zone units and the preset process temperature within the first preset temperature difference range.

8. The cleaning method according to claim 7, wherein The cleaning method further comprises: comparing the local temperatures of any two of the temperature zone units; in the case where the difference between the local temperatures of any two of the temperature zone units exceeds a second preset temperature difference range, controlling and adjusting the local temperature of the corresponding temperature zone unit to make the difference between the local temperatures of any two of the temperature zone units within the second preset temperature difference range.

9. The cleaning method according to any one of claims 6 to 8, characterized in that, The detecting the actual temperature of the temperature control area for regulating the temperature of the wafer surface comprises: detecting the actual temperatures of a plurality of positions in the temperature control area and the actual temperatures of temperature adjusting elements for adjusting the temperatures of the plurality of positions in the temperature control area.

10. The cleaning method according to claim 9, wherein The temperature adjusting elements comprise at least one of a heater and a cooler; The controlling the temperature of the temperature control area comprises: controlling the heating power of the heater, or controlling the refrigeration power of the cooler, or simultaneously controlling the heating power of the heater and the refrigeration power of the cooler.

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