High-reliability three-dimensional heterogeneous integrated radio frequency micro module

Abstract

The invention belongs to the technical field of radio frequency microsystems, and provides a high-reliability three-dimensional heterogeneous integrated radio frequency micromodule which comprises a first substrate and a second substrate, the first substrate and the second substrate are connected through BGA solder balls, and components are arranged in the first substrate and the second substrate; each of the first substrate and the second substrate is composed of five layers of silicon wafers, and four groups of silicon wafers of the first substrate and the second substrate are the same in thickness and are smaller than the remaining group of silicon wafers in thickness. Compared with the prior art, the beneficial effects of the invention are that the middle two layers of silicon wafers are arranged as the secondary wiring layer and the chip cavity supporting layer, and the top layer of silicon wafer with a relatively thick thickness can be used as a chip mounting layer and a cover plate layer at the same time after being grooved, so that the distance between adjacent chip cavities can be reduced, the electromagnetic compatibility of SiP is improved, and the reliability of the SiP is improved. And the product integration level is improved, and the plane size of the product is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency microsystems, and in particular relates to a high-reliability three-dimensional heterogeneous integrated radio frequency micromodule. Background Art

[0002] As an advanced integrated packaging technology under the trend of system miniaturization, RF microsystem integration technology has become a major basic technology that leads equipment development and promotes electronic technology innovation. It is an important technical platform that supports the transformation of electronic information equipment capabilities in the fields of sensing and communication. It is also one of the core technologies in current electronic information technology research.

[0003] Traditional high-reliability metal-ceramic hermetic packaged RF micromodules use an integrated multi-layer wiring HTCC / LTCC ceramic shell and tube package. The ceramic shell and tube serves as both a package body and a wiring layer. The design must take into account the bonding finger design, multi-layer RF wiring and cavity structure design at the same time, resulting in a low degree of product integration and a large planar size of the product. Summary of the invention

[0004] The purpose of the present invention is to provide a highly reliable three-dimensional heterogeneous integrated radio frequency micromodule, aiming to solve the technical problems of low product integration and large planar size of products in the prior art.

[0005] The present invention is implemented as follows: a high-reliability three-dimensional heterogeneous integrated radio frequency micromodule comprises a first substrate and a second substrate, wherein the first substrate and the second substrate are connected by BGA solder balls, and components are arranged in the first substrate and the second substrate; The first substrate and the second substrate are both composed of five layers of silicon wafers, four groups of silicon wafers of the first substrate and the second substrate have the same thickness and are thinner than the remaining group of silicon wafers, the thicker group of silicon wafers is located at the top, the two middle layers of silicon wafers are set as secondary wiring layers and chip cavity support layers, and the thicker top layer of silicon wafer can be used as a chip mounting layer and a cover layer at the same time after grooving, and the components are fixedly mounted on the two middle layers of silicon wafers and the top layer of silicon wafer.

[0006] Further technical solution: a gold-plated layer is provided on the upper and lower surfaces of each layer of the silicon wafer, and the silicon wafers are bonded together using a wafer-level gold-gold hot-press bonding process.

[0007] Further technical solution: a top cover is fixedly installed on the top of the second substrate, and a mounting tube is rotatably installed on the top cover. The top of the mounting tube is an open structure, and a cross-shaped second partition plate is fixedly installed in the mounting tube. The second partition plate divides the mounting tube into multiple areas. Multiple groups of cooling fans located in different areas are fixedly installed in the mounting tube, and multiple groups of first through holes located in each area are opened at the bottom of the mounting tube.

[0008] Further technical solution: a partition is fixedly installed in the top cover, the mounting tube is rotatably connected to the partition, the partition divides the area enclosed by the top cover and the second substrate into two upper and lower areas, and the first through hole is connected to the lower area.

[0009] Further technical solution: When two adjacent groups of cooling fans rotate, the air is pushed in opposite directions, and the air flows in the direction of entering the installation tube and leaving the installation tube.

[0010] Further technical solution: a mounting ring is fixedly mounted on the top cover, the mounting ring is coaxially arranged with the mounting tube, a filter plate is fixedly mounted on the mounting ring by fixing screws, and the filter plate is in sliding contact with the end surface of the mounting tube.

[0011] Further technical solution: A baffle plate with a frame-type structure is provided on the top cover, the inner side surface of the baffle plate is in sliding contact with the outer side surfaces of the first substrate and the second substrate, the baffle plate closes the area between the first substrate and the second substrate, an inner cavity is opened in the four side walls of the baffle plate, a third through hole connected to the inner cavity is opened on the side wall of the baffle plate, the third through hole is connected to the area between the first substrate and the second substrate, and the inner cavity is connected to the upper area in the top cover through a connecting pipe.

[0012] Further technical solution: A first partition plate located in the upper area inside the top cover is fixedly installed on the partition, and the first partition plate is in rotational contact with the mounting tube. The first partition plate divides the upper area into four independent areas corresponding to the side walls of the baffle plate, and each independent area is connected to the corresponding inner cavity through multiple groups of connecting pipes. Multiple groups of first through holes are provided on the side wall of the mounting tube, and the first through holes connect the independent areas inside the mounting tube with the independent areas separated by the first partition plate.

[0013] Further technical solution: A rotating power part is fixedly installed on the partition, the axis of the output shaft of the rotating power part is parallel to the axis of the mounting tube, a gear is fixedly installed on the output end of the rotating power part, the gear is meshed with a gear ring fixedly installed on the mounting tube, and the gear ring is coaxially arranged with the mounting tube.

[0014] Compared with the prior art, the present invention has the following beneficial effects: 1. The two middle silicon wafers are set as the secondary wiring layer and the chip cavity support layer. The thicker silicon wafer on the top layer can be used as the chip mounting layer and the cover layer after grooving, which can reduce the distance between adjacent chip cavities, improve the electromagnetic compatibility characteristics of SiP, improve the product integration, and reduce the planar size of the product. The chips inside the first substrate and the second substrate are interconnected by bonding wires and low-loss planar transmission lines. Vertical interconnection TSV and solder ball coaxial structure are used between the first substrate and the second substrate to realize vertical interconnection of signals, thereby ensuring the stability of the connection between the chips.

[0015] 2. The cooling fan cooperates with the top cover to realize the circulation of air in the area below the partition, thereby cooling the second substrate. At the same time, the air circulates between the area enclosed by the first substrate and the second substrate and the outside world, thereby cooling the first substrate. The air takes away the heat to avoid the influence of heat accumulation on the second substrate, thereby improving the cooling effect of the first substrate and the second substrate.

[0016] 3. When cooling, the installation cylinder rotates, and the connection relationship between the first through hole and multiple areas above the partition will cycle and alternate, and then the third through holes on the four side walls of the shielding plate will repeatedly alternate between suction and air ejection, so that the air can enter and leave the area surrounded by the first substrate and the second substrate from different directions, ensuring that the air can contact various positions on the upper surface of the first substrate and the lower surface of the second substrate, avoiding the inability of the BGA solder ball to block some areas from sufficient contact with the air, and further improving the cooling effect on the first substrate and the second substrate.

[0017] 4. When the mounting cylinder rotates, the position where the air enters the mounting cylinder and the position where the air flows out of the mounting cylinder change all the time, so that the air flowing out of the mounting cylinder can fully clean the filter plate, avoid the reduction of air intake caused by dust accumulation on the filter plate, ensure the speed of air circulation, and ensure the cooling effect on the first substrate and the second substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0019] Figure 2 It is a cross-sectional structural schematic diagram of the present invention.

[0020] Figure 3 It is the front view of the present invention.

[0021] Figure 4 for Figure 2 A magnified schematic diagram of area A in the middle.

[0022] Figure 5 It is a schematic diagram of the structure of the top cover in the present invention.

[0023] Figure 6 It is a schematic diagram of the structure of the mounting ring in the present invention.

[0024] Figure 7 It is a schematic diagram of the structure inside the top cover of the present invention.

[0025] In the accompanying drawings: 1. first substrate; 2. second substrate; 3. silicon wafer; 4. components; 5. BGA solder balls; 6. top cover; 7. partition; 8. mounting tube; 9. first partition plate; 10. second partition plate; 11. cooling fan; 12. first through hole; 13. second through hole; 14. rotating power part; 15. gear; 16. gear ring; 17. mounting ring; 18. filter plate; 19. fixing screw; 20. connecting pipe; 21. shielding plate; 22. inner cavity; 23. third through hole. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0027] The specific implementation of the present invention is described in detail below in conjunction with specific embodiments.

[0028] like Figure 1-Figure 3 As shown, a highly reliable three-dimensional heterogeneous integrated radio frequency micromodule provided by the present invention includes a first substrate 1 and a second substrate 2, the first substrate 1 and the second substrate 2 are connected by a BGA solder ball 5, and components 4 are disposed in the first substrate 1 and the second substrate 2; The first substrate 1 and the second substrate 2 are both composed of five layers of silicon wafers 3. Four groups of silicon wafers 3 of the first substrate 1 and the second substrate 2 have the same thickness and are thinner than the remaining group of silicon wafers 3. The thicker group of silicon wafers 3 is located at the top, and the middle two layers of silicon wafers 3 are set as secondary wiring layers and chip cavity support layers. The thicker top layer of silicon wafer 3 can be used as a chip mounting layer and a cover layer after grooving. Components 4 are fixedly mounted on the middle two layers of silicon wafers 3 and the top layer of silicon wafer 3. A gold-plated layer is provided on the upper and lower surfaces of each layer of silicon wafer 3, and the silicon wafers 3 are bonded by a wafer-level gold-gold hot-pressing bonding process.

[0029] In actual application, the present embodiment integrates components 4 on the middle two layers of silicon wafers 3 on the first substrate 1. The components 4 on the first substrate 1 are single-pole double-throw switch chips, limiting low-noise amplifier chips, power amplifier chips, negative voltage regulator chips with negative-to-positive control functions, and capacitor chips. Components 4 are also integrated on the middle two layers of silicon wafers 3 on the second substrate 2. The components 4 on the second substrate 2 are amplitude-phase control multifunctional chips, serial-in and serial-out wave control chips, power modulation chips, switch drive chips, and capacitor chips. A groove is provided on the thicker silicon wafer 3 on the top layer of the second substrate 2, and the Si-based wave control chip is mounted in the groove. The bottom of the groove is opposite to the amplitude and phase control multifunctional chip below. The chip cavity is shielded by densely metalized TSV to prevent electromagnetic interference between adjacent chip cavities, thereby reducing the spacing between adjacent chip cavities, which not only improves the electromagnetic compatibility characteristics of SiP, but also improves the product integration and reduces the planar size of the product. The chips inside the first substrate 1 and the second substrate 2 are interconnected by bonding wires and low-loss planar transmission lines. Vertical interconnection TSV and solder ball coaxial structure are used between the first substrate 1 and the second substrate 2 to achieve vertical interconnection of signals, thereby ensuring the stability of the connection between the chips.

[0030] like Figure 1-Figure 7 As shown, a high-reliability three-dimensional heterogeneous integrated radio frequency micromodule provided by the present invention is provided. A top cover 6 is fixedly installed on the top of the second substrate 2, and a mounting cylinder 8 is rotatably installed on the top cover 6. The top of the mounting cylinder 8 is an open structure. A cross-shaped second partition plate 10 is fixedly installed in the mounting cylinder 8. The second partition plate 10 divides the mounting cylinder 8 into a plurality of areas. A plurality of groups of cooling fans 11 located in different areas are fixedly installed in the mounting cylinder 8, and a plurality of groups of first through holes 12 located in each area are provided at the bottom of the mounting cylinder 8.

[0031] Specifically, a partition 7 is fixedly installed in the top cover 6, and the mounting tube 8 is rotatably connected to the partition 7. The partition 7 divides the area surrounded by the top cover 6 and the second substrate 2 into two upper and lower areas, and the first through hole 12 is connected to the lower area.

[0032] Specifically, when two adjacent groups of heat dissipation fans 11 rotate, the air is pushed in opposite directions, and the air flows into the installation tube 8 and leaves the installation tube 8 .

[0033] Specifically, a mounting ring 17 is fixedly mounted on the top cover 6 , the mounting ring 17 is coaxially arranged with the mounting tube 8 , a filter plate 18 is fixedly mounted on the mounting ring 17 via fixing screws 19 , and the filter plate 18 is in sliding contact with the end surface of the mounting tube 8 .

[0034] Specifically, a baffle plate 21 with a frame-type structure is provided on the top cover 6, and the inner side surface of the baffle plate 21 is in sliding contact with the outer side surfaces of the first substrate 1 and the second substrate 2. The baffle plate 21 closes the area between the first substrate 1 and the second substrate 2. An inner cavity 22 is provided in each of the four side walls of the baffle plate 21. A third through hole 23 connected to the inner cavity 22 is provided on the side wall of the baffle plate 21. The third through hole 23 is connected to the area between the first substrate 1 and the second substrate 2, and the inner cavity 22 is connected to the upper area in the top cover 6 through a connecting pipe 20.

[0035] Specifically, a first partition plate 9 located in the upper area of ​​the top cover 6 is fixedly installed on the partition 7. The first partition plate 9 is in rotational contact with the mounting tube 8. The first partition plate 9 divides the upper area into four independent areas corresponding to the side walls of the baffle plate 21. Each independent area is connected to the corresponding inner cavity 22 through a plurality of connecting tubes 20. A plurality of first through holes 12 are provided on the side wall of the mounting tube 8. The first through holes 12 connect the independent areas in the mounting tube 8 with the independent areas separated by the first partition plate 9.

[0036] Specifically, a rotating power component 14 is fixedly mounted on the partition 7, and the axis of the output shaft of the rotating power component 14 is parallel to the axis of the mounting tube 8. A gear 15 is fixedly mounted on the output end of the rotating power component 14, and the gear 15 is meshed with a ring gear 16 fixedly mounted on the mounting tube 8, and the ring gear 16 is coaxially arranged with the mounting tube 8.

[0037] In actual application of this embodiment, the components 4 will generate a large amount of heat when working, and the cooling fans 11 are turned on, wherein two groups of cooling fans 11 suck outside air into the area where they are located in the mounting tube 8, and the other two groups of cooling fans 11 blow the air in the area where they are located in the mounting tube 8 out of the mounting tube 8, and the air entering the mounting tube 8 is filtered through the filter plate 18 to prevent large particles of dust from entering the mounting tube 8, and the air entering the mounting tube 8 will enter the areas above and below the partition 7 through the first through hole 12 and the second through hole 13 respectively, and the air flowing out of the mounting tube 8 will also be extracted from the areas above and below the partition 7 through the corresponding first through hole 12 and the second through hole 13, so that the cold air entering the area below the partition 7 contacts with the second substrate 2 for heat exchange and then leaves again, completing the circulation of the air in the area below the partition 7, and realizing the cooling of the second substrate 2; At the same time, the air entering the installation tube 8 will flow into the independent area separated by the first partition plate 9 through the first through hole 12, and then the air in the area will enter the inner cavity 22 through the connecting pipe 20, and then be blown into the area between the first substrate 1 and the second substrate 2 through the third through hole 23. At the same time, the two sets of side walls adjacent to the shielding plate 21 and the air blowing side wall will absorb the air in the area enclosed by the first substrate 1 and the second substrate 2 through the third through hole 23, and then the air will enter the corresponding area above the partition 7 along the connecting pipe 20, and finally enter the installation tube 8 through the first through hole 12 and be blown out of the installation tube 8 by the cooling fan 11, so as to realize the air circulation flow between the area enclosed by the first substrate 1 and the second substrate 2 and the outside world, realize the cooling of the first substrate 1, and the air takes away the heat to avoid the influence of heat accumulation on the second substrate 2, thereby improving the cooling effect of the first substrate 1 and the second substrate 2; When cooling, the rotating power member 14 drives the installation tube 8 to rotate through the meshing gear 15 and the gear ring 16. When the installation tube 8 rotates, the connection relationship between the first through hole 12 and the multiple areas above the partition 7 will be cyclically alternating, and then the third through holes 23 on the four side walls of the shielding plate 21 will have repeated alternation of suction and air ejection, and then the air can enter and leave the area surrounded by the first substrate 1 and the second substrate 2 from different directions, ensuring that the air can contact various positions on the upper surface of the first substrate 1 and the lower surface of the second substrate 2, avoiding that the BGA solder ball 5 blocks some areas from being unable to fully contact the air, and further improving the cooling effect on the first substrate 1 and the second substrate 2; When the mounting cylinder 8 rotates, the position where the air enters the mounting cylinder 8 and the position where the air flows out of the mounting cylinder 8 change all the time, so that the air flowing out of the mounting cylinder 8 can comprehensively clean the filter plate 18, avoiding the reduction of the air intake volume caused by the accumulation of dust on the filter plate 18, ensuring the speed of air circulation, and ensuring the cooling effect on the first substrate 1 and the second substrate 2.

[0038] In one embodiment of the present invention, the rotating power member 14 is a motor, and of course it can also be other components capable of outputting rotating power, such as a hydraulic motor, and the mounting cylinder 8 is driven to rotate by the motor.

[0039] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

[0040] In addition, it should be understood that although the present specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

Claims

1. A high-reliability three-dimensional heterogeneous integrated radio frequency micromodule, comprising a first substrate (1) and a second substrate (2), characterized in that: The first substrate (1) and the second substrate (2) are connected by means of BGA solder balls (5), and components (4) are arranged in both the first substrate (1) and the second substrate (2); The first substrate (1) and the second substrate (2) are both composed of five layers of silicon wafers (3); four groups of silicon wafers (3) of the first substrate (1) and the second substrate (2) have the same thickness and are thinner than the remaining group of silicon wafers (3); the thicker group of silicon wafers (3) is located at the top; the middle two layers of silicon wafers (3) are provided as secondary wiring layers and chip cavity support layers; the thicker top layer of silicon wafer (3) can be used as a chip mounting layer and a cover layer after being grooved; and the components (4) are fixedly mounted on the middle two layers of silicon wafers (3) and the top layer of silicon wafer (3).

2. A highly reliable three-dimensional heterogeneous integrated radio frequency micromodule according to claim 1, characterized in that: The upper and lower surfaces of each layer of the silicon wafer (3) are provided with a gold-plated layer, and the silicon wafers (3) are bonded together using a wafer-level gold-gold hot-press bonding process.

3. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 1, characterized in that: A top cover (6) is fixedly mounted on the top of the second substrate (2), a mounting tube (8) is rotatably mounted on the top cover (6), the top of the mounting tube (8) is an open structure, a cross-shaped second partition plate (10) is fixedly mounted inside the mounting tube (8), the second partition plate (10) divides the mounting tube (8) into a plurality of areas, a plurality of groups of cooling fans (11) located in different areas are fixedly mounted inside the mounting tube (8), and a plurality of groups of first through holes (12) located in each area are provided at the bottom of the mounting tube (8).

4. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 3, characterized in that: A partition plate (7) is fixedly mounted inside the top cover (6), the mounting tube (8) is rotatably connected to the partition plate (7), the partition plate (7) divides the area enclosed by the top cover (6) and the second substrate (2) into two upper and lower areas, and the first through hole (12) is connected to the lower area.

5. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 3, characterized in that: When two adjacent groups of cooling fans (11) rotate, the air is pushed in opposite directions, and the air flows in the directions of entering the installation tube (8) and leaving the installation tube (8).

6. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 3, characterized in that: A mounting ring (17) is fixedly mounted on the top cover (6), the mounting ring (17) and the mounting cylinder (8) are coaxially arranged, a filter plate (18) is fixedly mounted on the mounting ring (17) via a fixing screw (19), and the filter plate (18) is in sliding contact with an end surface of the mounting cylinder (8).

7. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 4, characterized in that: The top cover (6) is provided with a baffle plate (21) of a frame-shaped structure, the inner side surface of the baffle plate (21) is in sliding contact with the outer side surfaces of the first substrate (1) and the second substrate (2), the baffle plate (21) closes the area between the first substrate (1) and the second substrate (2), the four side walls of the baffle plate (21) are each provided with an inner cavity (22), the side wall of the baffle plate (21) is provided with a third through hole (23) connected to the inner cavity (22), the third through hole (23) is connected to the area between the first substrate (1) and the second substrate (2), and the inner cavity (22) is connected to the upper area in the top cover (6) via a connecting pipe (20).

8. The high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 7, characterized in that: A first partition plate (9) located in the upper area of ​​the top cover (6) is fixedly mounted on the partition plate (7). The first partition plate (9) is in rotational contact with the mounting tube (8). The first partition plate (9) divides the upper area into four independent areas corresponding to the side walls of the shielding plate (21). Each independent area is connected to the corresponding inner cavity (22) through a plurality of connecting tubes (20). A plurality of first through holes (12) are provided on the side walls of the mounting tube (8). The first through holes (12) connect the independent areas in the mounting tube (8) with the independent areas separated by the first partition plate (9).

9. A high-reliability three-dimensional heterogeneous integrated radio frequency micromodule according to claim 8, characterized in that: A rotating power member (14) is fixedly mounted on the partition (7); the axis of an output shaft of the rotating power member (14) is parallel to the axis of the mounting tube (8); a gear (15) is fixedly mounted on the output end of the rotating power member (14); the gear (15) meshes with a gear ring (16) fixedly mounted on the mounting tube (8); and the gear ring (16) and the mounting tube (8) are coaxially arranged.

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