Semiconductor power device and converter

Abstract

The invention provides a semiconductor power device and a converter, and the semiconductor power device comprises a switch structure which comprises at least two turn-off semiconductor devices and at least two drivers, the at least two turn-off semiconductor devices are connected in series, the drivers are electrically connected with the turn-off semiconductor devices in a one-to-one correspondence manner, and the drivers are electrically connected with the turn-off semiconductor devices in a one-to-one correspondence manner. The driver is used for regularly sending a heartbeat signal to at least one other driver in the switch structure, and the driver is also used for controlling the corresponding semiconductor device capable of being turned off to be kept in a conduction state at least under the condition that the heartbeat signal of the other driver is not received in a preset period; the voltage clamping circuit is connected to the two ends of the at least two semiconductor devices capable of being turned off in parallel, and the voltage clamping circuit breaks down all the remaining semiconductor devices capable of being turned off in the switch structure under the condition that the withstand voltage value of the remaining semiconductor devices capable of being turned off is smaller than the action voltage of the voltage clamping circuit. The remaining turn-off semiconductor devices are turn-off semiconductor devices which are not in short circuit failure in the switch structure.

Description

Technical Field

[0001] The present application relates to the technical field of electronic circuits, and in particular to a semiconductor power device and a converter. Background Art

[0002] In large-capacity power electronic devices, turn-off semiconductor devices are widely used in high-voltage and high-current environments. These devices are usually connected in series to form a bridge arm circuit to achieve higher voltage levels and current handling capabilities. In the bridge arm circuit, in order to protect the device from being subjected to excessive voltage, a voltage clamping circuit is usually used to limit the voltage across the device in the series branch. The withstand voltage of multiple devices in the series branch determines the action voltage of the voltage clamping circuit. When the number of failed devices in the series branch rises to a point where the action voltage is greater than the total withstand voltage of the remaining normal devices, the transient voltage clamping circuit will cause all devices in the series branch to break down due to overvoltage when the switch-off transient voltage clamping circuit is turned off.

[0003] Therefore, how to solve the problem in the prior art that in a series circuit of semiconductor devices that can be turned off and share a voltage clamping circuit, failure of some devices will cause overvoltage breakdown of all devices in the series circuit, resulting in high maintenance costs. Summary of the invention

[0004] The main purpose of the present application is to provide a semiconductor power device and a converter to at least solve the problem in the prior art that in a series circuit of turnable semiconductor devices that share a voltage clamping circuit, failure of some devices will cause overvoltage breakdown of all devices in the series circuit.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a semiconductor power device is provided, comprising: a switch structure, comprising at least two turn-off semiconductor devices and at least two drivers, at least two of the turn-off semiconductor devices are connected in series, a first end of the driver is electrically connected to a control end of the turn-off semiconductor device in a one-to-one correspondence, a second end of the driver is electrically connected to an output end of the turn-off semiconductor device in a one-to-one correspondence, the driver is used to periodically send a heartbeat signal to at least one other driver in the switch structure, and the driver is also used to control the corresponding turn-off semiconductor device to remain in a conducting state when the heartbeat signal of the other driver is not received within at least a predetermined period; a voltage clamping circuit, connected in parallel at both ends of at least two of the turn-off semiconductor devices, the voltage clamping circuit breaks down all the remaining turn-off semiconductor devices in the switch structure when the withstand voltage of the remaining turn-off semiconductor devices is less than the action voltage of the voltage clamping circuit and the voltage at both ends of the voltage clamping circuit is greater than the action voltage, the remaining turn-off semiconductor devices are the turn-off semiconductor devices in the switch structure that have not failed due to short circuit.

[0006] Optionally, each of the drivers is used to send the heartbeat signal to all other drivers in the switch structure, and is also used to determine the number of the heartbeat signals that have not been received within the predetermined period. When the number is greater than or equal to a predetermined threshold and the corresponding turn-off semiconductor device is in the on-state and receives a shutdown instruction, the corresponding turn-off semiconductor device is controlled to maintain the on-state, and the shutdown instruction is used to instruct to shut down the turn-off semiconductor device.

[0007] Optionally, the number of the turnable semiconductor devices and the drivers is an even number, and the heartbeat signal is sent to each other periodically between every two drivers in the switch structure. The driver is also used to control the corresponding turnable semiconductor device to remain in the on state when the heartbeat signal is not received within the predetermined period and the corresponding turnable semiconductor device is in the on state and a shutdown instruction is received, and the shutdown instruction is used to instruct to shut down the turnable semiconductor device.

[0008] Optionally, in the switch structure, any two of the drivers exchange the heartbeat signal through an isolated communication path.

[0009] Optionally, the isolated communication path includes one of the following: an optical coupling isolation path, a magnetic coupling isolation path, a capacitive coupling isolation path, a transformer isolation path or a digital isolation path.

[0010] Optionally, the switch structure further includes: a network switch communicating with all the drivers in the switch structure, and the driver exchanges the heartbeat signal with the other drivers through the network switch.

[0011] Optionally, the voltage clamping circuit includes one of the following: a lightning arrester, one end of which is electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and the other end is electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection; a Zener diode, a cathode of the Zener diode is electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and an anode of the Zener diode is electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection; a transient diode, a cathode of the transient diode is electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and an anode of the transient diode is electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection; a gate clamping circuit, one end of which is electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and the other end is electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection.

[0012] Optionally, the switch structure also includes: a plurality of first voltage-equalizing circuits, corresponding one-to-one to the turnable semiconductor devices, the first voltage-equalizing circuit including a first resistor and an energy storage device, the first end of the first resistor being electrically connected to the input end of the turnable semiconductor device, the second end of the first resistor being electrically connected to the first end of the energy storage device, and the second end of the energy storage device being electrically connected to the output end of the turnable semiconductor device; a plurality of second voltage-equalizing circuits, corresponding one-to-one to the turnable semiconductor devices, the second voltage-equalizing circuit including a second resistor, the first end of the second resistor being electrically connected to the input end of the turnable semiconductor device, the second end of the second resistor being electrically connected to the output end of the turnable semiconductor device, and the resistance value of the second resistor being less than the equivalent resistance when the turnable semiconductor device is in a blocking state.

[0013] Optionally, the turn-off semiconductor device includes at least one of the following: IGBT, HEMT, MOSFET and turn-off thyristor, and the turn-off thyristor includes at least one of the following: IGCT, GTO, SGTO, ETO and IETO.

[0014] According to another aspect of the present application, a converter is provided, comprising: a plurality of bridge arms, each of the bridge arms comprising a plurality of any one of the semiconductor power devices connected in series.

[0015] By applying the technical solution of the present application, at least two turn-off semiconductor devices in the switch structure are connected in series, the turn-off semiconductor devices are connected to the drivers one by one, and heartbeat signals are sent periodically between the drivers. When the driver does not receive the heartbeat signals of other drivers within a predetermined period, the turn-off semiconductor devices corresponding to the drivers are controlled to remain in the on state, and the voltage clamping circuit is connected in parallel at both ends of the series branch of the turn-off semiconductor devices. When the withstand voltage of the turn-off semiconductor devices that have not failed in the series branch is less than the action voltage of the voltage clamping circuit and the voltage at both ends of the voltage clamping circuit is greater than the action voltage, the voltage clamping circuit will break down all the turn-off semiconductor devices that have not failed and cause them to fail. In the present application, heartbeat signals are periodically sent between drivers of the turn-off semiconductor devices in the series circuit. When the heartbeat signal is not received, it is considered that the turn-off semiconductor device corresponding to the driver that has not sent the heartbeat signal has failed. At this time, the driver of the turn-off semiconductor device that has not failed controls the turn-off semiconductor device to remain in the on state, thereby reducing the voltage across the voltage clamping circuit to be lower than the action voltage, avoiding the problem of failure of some devices in the series circuit of turn-off semiconductor devices that share a voltage clamping circuit triggering the voltage clamping circuit to break down the non-failed devices, preventing the failure range from further expanding, and solving the problem of high loss cost of turn-off semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0017] Figure 1 A schematic structural diagram of a semiconductor power device provided in an embodiment of the present application is shown;

[0018] Figure 2 A schematic structural diagram of another semiconductor power device provided according to an embodiment of the present application is shown;

[0019] Figure 3 A schematic structural diagram of another semiconductor power device provided according to an embodiment of the present application is shown.

[0020] The above drawings include the following reference numerals:

[0021] 10. Turn-off semiconductor device; 101. First turn-off semiconductor device; 102. Second turn-off semiconductor device; 11. Driver; 111. First driver; 112. Second driver; 12. Network switch; 13. Voltage clamping circuit; 15. First voltage equalizing circuit; 16. First resistor; 17. Energy storage device; 18. Second resistor. DETAILED DESCRIPTION

[0022] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0023] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0025] As introduced in the background technology, in the prior art, in a series circuit of turn-off semiconductor devices that share a voltage clamping circuit, failure of some devices may cause overvoltage breakdown of all devices in the series circuit. To solve the above technical problem, an embodiment of the present application provides a semiconductor power device and a converter.

[0026] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0027] An embodiment of the present application provides a semiconductor power device. Figure 1 A schematic diagram of the structure of a semiconductor power device in an embodiment of the present application is shown as an example. Figure 1 As shown, the semiconductor power device comprises:

[0028] A switch structure, comprising at least two turn-off semiconductor devices 10 and at least two drivers 11, wherein at least two of the turn-off semiconductor devices 10 are connected in series, a first end of the driver 11 is electrically connected to a control end of the turn-off semiconductor device 10 in a one-to-one correspondence, a second end of the driver 11 is electrically connected to an output end of the turn-off semiconductor device 10 in a one-to-one correspondence, the driver 11 is used to periodically send a heartbeat signal to at least one other driver 11 in the switch structure, and the driver 11 is also used to control the corresponding turn-off semiconductor device 10 to remain in a conducting state when the heartbeat signal of the other driver 11 is not received within at least a predetermined period;

[0029] Specifically, the above-mentioned other driver 11 refers to at least one driver 11 other than the above-mentioned driver 11 in the switch structure. The above-mentioned driver 11 communicates with at least one other driver 11, and the above-mentioned driver 11 periodically sends a heartbeat signal to the other communicating drivers 11, and the above-mentioned driver 11 also periodically receives the heartbeat signal sent by the other communicating drivers 11. The corresponding above-mentioned turn-off semiconductor device 10 is a turn-off semiconductor device electrically connected to the driver 11. In the case of failure of the turn-off semiconductor device 10, the driver 11 electrically connected thereto cannot obtain electrical energy from the circuit, and thus cannot normally execute the preset logic of periodically sending the heartbeat signal. Therefore, in the case where the above-mentioned heartbeat signal of the above-mentioned other driver 11 is not received within the predetermined period, it is considered that the turn-off semiconductor device electrically connected to the other driver 11 has failed.

[0030] The voltage clamping circuit 13 is connected in parallel at both ends of at least two of the above-mentioned turn-off semiconductor devices 10. When the withstand voltage of the remaining turn-off semiconductor devices is less than the action voltage of the above-mentioned voltage clamping circuit 13 and the voltage across the above-mentioned voltage clamping circuit 13 is greater than the above-mentioned action voltage, the above-mentioned voltage clamping circuit 13 breaks down all the above-mentioned remaining turn-off semiconductor devices in the above-mentioned switch structure. The above-mentioned remaining turn-off semiconductor devices are the above-mentioned turn-off semiconductor devices 10 in the above-mentioned switch structure that have not failed due to short circuit.

[0031] Specifically, the voltage clamping circuit 13 is used to perform overvoltage clamping protection on the switch structure in the turn-off transient state, specifically, the overvoltage clamping protection is performed when the series voltage (i.e., the voltage across the voltage clamping circuit 13) is greater than the action voltage. In the above switch structure, if some of the turn-off semiconductor devices 10 fail due to short circuit, so that the total withstand voltage of the remaining turn-off semiconductor devices is less than the action voltage of the voltage clamping circuit, and the turn-off semiconductor devices 10 in series are in the turn-off transient state, the voltage clamping circuit 13 will be triggered to break down all the remaining turn-off semiconductor devices, making them fail.

[0032] Through the above embodiments, at least two turn-off semiconductor devices in the switch structure are connected in series, the turn-off semiconductor devices are connected to the drivers one by one, and the drivers send heartbeat signals regularly. When the driver does not receive the heartbeat signal of other drivers within a predetermined period, the turn-off semiconductor device corresponding to the driver is controlled to remain in the on state, and the voltage clamping circuit is connected in parallel at both ends of the series branch of the turn-off semiconductor devices. When the withstand voltage value of the turn-off semiconductor devices that have not failed in the series branch is less than the action voltage of the voltage clamping circuit and the voltage at both ends of the voltage clamping circuit is greater than the action voltage, the voltage clamping circuit will break down all the turn-off semiconductor devices that have not failed and make them fail. In the present application, heartbeat signals are periodically sent between drivers of the turn-off semiconductor devices in the series circuit. When the heartbeat signal is not received, it is considered that the turn-off semiconductor device corresponding to the driver that has not sent the heartbeat signal has failed. At this time, the driver of the turn-off semiconductor device that has not failed controls the turn-off semiconductor device to remain in the on state, thereby reducing the voltage across the voltage clamping circuit to be lower than the action voltage, avoiding the problem of failure of some devices in the series circuit of turn-off semiconductor devices that share a voltage clamping circuit triggering the voltage clamping circuit to break down the non-failed devices, preventing the failure range from further expanding, and solving the problem of high loss cost of turn-off semiconductor devices.

[0033] The present application uses a heartbeat signal mechanism to promptly lock the corresponding turn-off semiconductor device in the on state when a turn-off semiconductor device fails, thereby avoiding the problem of failure of the turn-off semiconductor devices in the entire switch structure due to the failure of some turn-off semiconductor devices. This is particularly important for applications such as high-voltage direct current transmission and high-power motor drive, and can significantly reduce the loss cost of the system.

[0034] In the present application, the above-mentioned driver is used to control the corresponding above-mentioned turnable semiconductor device to remain in the on state when the above-mentioned heartbeat signal from the above-mentioned other drivers is not received within a predetermined period and the above-mentioned turnable semiconductor device is in the above-mentioned on state and receives a turn-off instruction.

[0035] According to some optional embodiments of the present application, each of the above-mentioned drivers is used to send the above-mentioned heartbeat signal to all the above-mentioned other drivers in the above-mentioned switch structure, and is also used to determine the number of the above-mentioned heartbeat signals that have not been received within the above-mentioned predetermined period. When the above-mentioned number is greater than or equal to a predetermined threshold and the corresponding above-mentioned turn-off semiconductor device is in the above-mentioned on-state and receives a shutdown instruction, the corresponding above-mentioned turn-off semiconductor device is controlled to maintain the above-mentioned on-state, and the above-mentioned shutdown instruction is used to instruct to shut down the above-mentioned turn-off semiconductor device. In this embodiment, a driver in the switch structure interacts with all other drivers through heartbeat signals. When each turn-off semiconductor device operates normally, the driver can receive the heartbeat signals of all other drivers. Whenever a turn-off semiconductor device fails due to a short circuit, the driver will receive one less heartbeat signal within a predetermined period. Therefore, the number refers to the number of turn-off semiconductor devices that fail due to a short circuit in the switch structure. When the number is greater than or equal to a predetermined threshold, it indicates that there is a risk that the withstand voltage of the remaining turn-off semiconductor devices is less than the action voltage. At this time, in order to avoid triggering the voltage clamping circuit to break down the remaining turn-off semiconductor devices, the driver controls the corresponding electrically connected turn-off semiconductor devices to remain turned on when receiving a shutdown instruction, so as to avoid the actual voltage at both ends of the turn-off transient voltage clamping circuit being greater than its action voltage, thereby effectively preventing the problem of further expansion of the device failure range caused by the breakdown of non-failed devices.

[0036] The comprehensive monitoring mechanism of the heartbeat signal in the above-mentioned embodiment can more accurately determine the short-circuit failure state of the turn-off semiconductor device, avoiding the influence of the short-circuit failure of some turn-off semiconductor devices on other normal turn-off semiconductor devices in the entire switch structure. It is particularly suitable for industrial control and power systems that require high reliability, such as wind power and photovoltaic inverters, and ensures the continuity and safety of power conversion.

[0037] Specifically, the driver 11 and all the other drivers 11 constitute all the drivers in the switch structure. For example, when the switch structure includes two drivers, driver A and driver B, driver A is the driver 11, and driver B is all the other drivers 11; when the switch structure includes three drivers, driver A, driver B and driver C, driver A is the driver 11, and driver B and driver C constitute all the other drivers 11.

[0038] Moreover, when the above-mentioned number is greater than or equal to the predetermined threshold value, the corresponding above-mentioned turn-off semiconductor devices are in the above-mentioned on-state and receive the turn-off instruction, the driver corresponding to each normal turn-off semiconductor device in the switch structure executes the action of maintaining the on-state of the turn-off semiconductor device.

[0039] In some other embodiments, the number of the above-mentioned turn-off semiconductor devices and the above-mentioned drivers is an even number, and the above-mentioned heartbeat signals are sent to each other between every two of the above-mentioned drivers in the above-mentioned switch structure at regular intervals. The above-mentioned driver is also used to control the corresponding above-mentioned turn-off semiconductor device to remain in the on state when the above-mentioned heartbeat signal is not received within the above-mentioned predetermined period, and the corresponding above-mentioned turn-off semiconductor device is in the above-mentioned on state and receives a shutdown instruction, and the above-mentioned shutdown instruction is used to instruct to shut down the above-mentioned turn-off semiconductor device. The use of even-numbered drivers and turn-off semiconductor devices can achieve the rapid action of the driver of another normal turn-off semiconductor device when one turn-off semiconductor device fails through the interaction of two heartbeat signals, thereby reducing the risk of normal turn-off semiconductor devices being broken down, and is particularly suitable for occasions requiring high parallel processing capabilities, thereby enhancing the overall robustness of the system.

[0040] In the switch structure of the present application, any two of the above-mentioned drivers exchange the above-mentioned heartbeat signals through an isolated communication path. The design of the isolated communication path effectively prevents electrical interference between the drivers and ensures the accurate transmission of the heartbeat signal, which is crucial for occasions with complex electromagnetic environments and can significantly improve the signal stability and the anti-interference ability of the device.

[0041] Optionally, the above-mentioned isolated communication path includes one of the following: an optical coupling isolation path, a magnetic coupling isolation path, a capacitive coupling isolation path, a transformer isolation path or a digital isolation path.

[0042] Those skilled in the art can adopt a variety of isolated communication paths to achieve communication interaction between drivers, and can flexibly select the most appropriate communication method according to the specific application environment and requirements. For example, in high-voltage, high-current power conversion systems, optocoupler isolation paths can provide better electrical isolation, while in situations where high-speed data transmission is required, such as power electronic control units, digital isolation paths are more applicable.

[0043] In some exemplary embodiments, Figure 3 As shown, the switch structure further includes: a network switch 12, which communicates with all the drivers 11 in the switch structure, and the driver 11 exchanges the heartbeat signal with the other drivers 11 through the network switch 12. The driver 11 exchanges the heartbeat signal with other drivers through the network switch, that is, all the drivers in the switch structure communicate and interact through the network switch. The introduction of the network switch not only simplifies the communication connection between the drivers and reduces the complexity of the system, but also can realize the efficient distribution and collection of the heartbeat signal, which is particularly suitable for large-scale power device arrays and greatly improves the scalability and management efficiency of the system.

[0044] In some optional embodiments, the voltage clamping circuit includes one of the following:

[0045] Lightning arrester (such as Figure 2 and Figure 3 As shown), one end is electrically connected to the input end of the above-mentioned semiconductor device that can be turned off at the head of the series connection, and the other end is electrically connected to the output end of the above-mentioned semiconductor device that can be turned off at the tail of the series connection;

[0046] A Zener diode, wherein the cathode of the Zener diode is electrically connected to the input terminal of the semiconductor device that can be turned off at the head of the series connection, and the anode of the Zener diode is electrically connected to the output terminal of the semiconductor device that can be turned off at the tail of the series connection;

[0047] A transient diode, wherein the cathode of the transient diode is electrically connected to the input terminal of the semiconductor device that can be turned off at the head of the series connection, and the anode of the transient diode is electrically connected to the output terminal of the semiconductor device that can be turned off at the tail of the series connection;

[0048] The gate clamp circuit has one end electrically connected to the input end of the semiconductor device that can be turned off at the head of the series connection, and the other end electrically connected to the output end of the semiconductor device that can be turned off at the tail of the series connection.

[0049] In the above embodiment, the provision of the voltage clamping circuit can effectively prevent the damage to the controlled thyristor caused by the turn-off transient overvoltage, and can significantly improve the stability of the system and the life of the controlled thyristor.

[0050] Specifically, the arrester has the characteristics of high energy absorption, fast response, and simple structure, and can be used as an ideal choice for voltage clamping, especially in the field of high voltage and high power. Zener diodes have the advantages of high voltage clamping accuracy, fast response speed, and cost overlap, and can be used as an ideal choice for small and medium power applications. Transient diodes have the advantages of fast response speed, high surge absorption capacity, accurate clamping voltage, and bidirectional protection, which can simplify circuit structure design. The above-mentioned gate clamping circuit has strong compatibility, can stabilize the signal level, and reduce false triggering caused by noise coupling.

[0051] In some exemplary embodiments, the above-mentioned lightning arrester can be one or more of a metal oxide lightning arrester, a tube type lightning arrester, a valve type lightning arrester and a zinc oxide lightning arrester.

[0052] In some other embodiments, the above-mentioned gate clamping circuit may specifically include: a diode, a capacitor and a resistor. The diode is the core component of the circuit, which is used to control the current direction and realize voltage clamping, such as an ordinary diode, a Schottky diode, etc. The Schottky diode has the characteristics of low forward conduction voltage and fast switching speed, and is often used in clamping circuits with high requirements on speed and power consumption; the capacitor plays the role of storing charge and maintaining voltage stability, and its capacity will affect the clamping effect and circuit response speed; the resistor and the capacitor cooperate to determine the charging and discharging time constant of the capacitor, and can also limit the current in the circuit and protect other components.

[0053] Additionally, some clamping circuits may include a power supply to provide a specific level reference for the clamping.

[0054] According to other embodiments of the present application, Figure 2 and Figure 3 As shown, the switch structure further includes: a plurality of first voltage balancing circuits 15, corresponding one-to-one to the above-mentioned semiconductor devices 10 that can be turned off, the first voltage balancing circuit 15 includes a first resistor 16 and an energy storage device 17, the first end of the first resistor 16 is electrically connected to the input end of the above-mentioned semiconductor device 10 that can be turned off, the second end of the first resistor 16 is electrically connected to the first end of the energy storage device 17, and the second end of the energy storage device 17 is electrically connected to the output end of the above-mentioned semiconductor device 10 that can be turned off; a plurality of second voltage balancing circuits, corresponding one-to-one to the above-mentioned semiconductor devices 10 that can be turned off, the second voltage balancing circuit includes a second resistor 18, the first end of the second resistor 18 is electrically connected to the input end of the above-mentioned semiconductor device 10 that can be turned off, and the second end of the second resistor 18 is electrically connected to the output end of the above-mentioned semiconductor device 10 that can be turned off. In the above embodiment, the first voltage equalizing circuit and the second voltage equalizing circuit are used in combination, which can not only realize balanced voltage distribution, but also provide necessary energy buffering when the controlled thyristor is turned on or off. It is particularly suitable for occasions requiring frequent switching operations, such as power electronic converters, and can significantly improve the efficiency and life of the device and reduce energy loss.

[0055] Specifically, the first voltage balancing circuit 15 is used as a dynamic voltage balancing circuit for the turnable semiconductor device 10. The dynamic voltage balancing circuit is used to slow down the rate of change of the voltage at both ends during the turn-on and turn-off transients of the turnable semiconductor device 10, thereby reducing the dynamic voltage difference between the multiple turnable semiconductor devices 10. When the turnable semiconductor device 10 is in the turn-off transient state, the voltage at both ends rises and charges the energy storage device 17 through the first resistor 16. The dynamic voltage balancing circuit provides an additional current path for the turnable semiconductor device 10, reducing the equivalent input impedance at both ends of the turnable semiconductor device 10 and the rate of rise of the voltage at both ends. When the turnable semiconductor device 10 is in the turn-on transient state, the voltage at both ends drops and discharges the energy storage device 17 through the first resistor 16. The dynamic voltage balancing circuit provides an additional current source for the turnable semiconductor device 10, reducing the equivalent output impedance at both ends of the turnable semiconductor device 10 and the rate of drop of the voltage at both ends. The above-mentioned second voltage equalizing circuit serves as a static voltage equalizing circuit of the turnable semiconductor device 10. The resistance value of the static voltage equalizing circuit is much smaller than the equivalent impedance when the turnable semiconductor device 10 is in the blocking state. It can balance the leakage current of the turnable semiconductor device 10 when it is in the blocking state, thereby reducing the static voltage difference between multiple turnable semiconductor devices 10.

[0056] In addition, those skilled in the art can optimize the parameters of the first resistor and the energy storage device in the dynamic voltage equalizing circuit according to the characteristics of IGCT and other turn-off semiconductor devices to better adapt to the rapidly changing switching state, reduce the dynamic voltage difference between the turn-off semiconductor devices, and reduce the energy loss of the dynamic voltage equalizing circuit during the turn-on and turn-off transients.

[0057] Those skilled in the art can select any suitable device as the energy storage device 17, for example, Figure 2 and Figure 3 As shown, a capacitor is selected as the energy storage device 17; for another example, an inductor is selected as the energy storage device 17. In addition, the first resistor 16 may include only one resistor element, or may include multiple resistor elements connected in series and parallel. Similarly, the second resistor 18 may include only one resistor element, or may include multiple resistor elements connected in series and parallel.

[0058] Optionally, the above-mentioned turn-off semiconductor device includes at least one of the following: IGBT (Insulated Gate Bipolar Transistor), HEMT (High Electron Mobility Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a turn-off thyristor, and the above-mentioned turn-off thyristor includes at least one of the following: IGCT (Insulated Gate Bipolar Transistor), HEMT (High Electron Mobility Transistor), MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), and a turn-off thyristor. grated Gate-Commutated Thyristor (integrated gate-commutated thyristor), GTO (GateTurn-Off Thyristor), SGTO (Super Gate Turn-Off Thyristor), ETO (Emitter Turn-Off Thyristor) and IETO (Integrated Emitter Turn-Off Thyristor).

[0059] In actual application, voltage clamping circuits are divided into passive clamping and active clamping. Among them, the passive clamping voltage clamping circuit is a voltage-controlled variable resistor device, such as a lightning arrester, a Zener diode, and a transient suppression diode; the active clamping voltage clamping circuit converts the voltage across the turn-off semiconductor device into a gate compensation current, and converts the turn-off semiconductor device into a voltage-controlled variable resistor device during the voltage equalization process. The equivalent impedance of the voltage clamping circuit decreases with the increase of the voltage across the switch structure, and is used to limit the further increase of the voltage across the overvoltage turn-off semiconductor device in the turn-off transient, forcing other turn-off semiconductor devices in the switch structure to withstand the voltage, so that the voltage across the turn-off semiconductor devices in the switch structure tends to be consistent, to achieve the voltage clamping function.

[0060] The withstand voltage of multiple series-connected semiconductor devices that can be turned off in the switch structure determines the action voltage of the voltage clamp circuit. When the number of failed devices in the series increases and the action voltage is greater than the total withstand voltage of the remaining normal devices, in the shutdown transient, when the voltage across the voltage clamp circuit is greater than the action voltage, all devices will fail due to overvoltage breakdown, causing the fault range to further expand. The failure mode of the turnable semiconductor device is short circuit, so the driver of the failed device cannot obtain energy from the main circuit, and thus cannot execute the preset logic normally. Among them, the above-mentioned action voltage is generally set to be less than the total withstand voltage of all the turnable semiconductor devices in the switch structure when they are not failed.

[0061] Taking the switch structure of the present application including two turn-off semiconductor devices and both turn-off semiconductor devices are IGCT as an example, the working principle of the semiconductor power device of the present application is explained. Figure 2 As shown, in the switch structure of the present application, there are two turn-off semiconductor devices 10, namely a first turn-off semiconductor device 101 and a second turn-off semiconductor device 102, and the cathode of the first turn-off semiconductor device 101 is electrically connected to the anode of the second turn-off semiconductor device 102; there are also two corresponding drivers 11, namely a first driver 111 and a second driver 112, a first end of the first driver 111 is electrically connected to the gate of the first turn-off semiconductor device 101, a second end of the first driver 111 is electrically connected to the cathode of the first turn-off semiconductor device 101, a first end of the second driver 112 is electrically connected to the gate of the second turn-off semiconductor device 102, and a second end of the second driver 112 is electrically connected to the cathode of the second turn-off semiconductor device 102; one end of the voltage clamping circuit 13 is connected to the first turn-off semiconductor The anode of the device 101 is electrically connected, and the other end is electrically connected to the cathode of the second turn-off semiconductor device 102, that is, the two turn-off semiconductor devices 10 share a voltage clamping circuit 13; the first driver 111 and the second driver 112 send heartbeat signals to each other through the isolated communication bus, and the heartbeat signal can be a high or low pulse or a communication packet, etc.; after receiving the heartbeat signal from the second driver 112, the first driver 111 considers that the second turn-off semiconductor device 102 is normal, and executes the shutdown command when the shutdown command arrives; otherwise, the first driver 111 considers that the second turn-off semiconductor device 102 has failed, and refuses to execute the shutdown command when the shutdown command arrives, and keeps the first turn-off semiconductor device 101 turned on, thereby reducing the series stage voltage to below the action voltage of the voltage clamping circuit 13, effectively preventing the fault range from further expanding.

[0062] When there are multiple switch structures in series, the complexity of the communication connection between the drivers increases exponentially, so Figure 3 The network switch shown is used to realize the aggregation and distribution of heartbeat signals between drivers, thereby reducing system complexity.

[0063] In addition to the heartbeat signal communication between drivers, the present application can further integrate fault detection functions, such as real-time monitoring of the current and voltage of the semiconductor device that can be shut down. Once an abnormality is detected, the fault isolation strategy is immediately initiated to quickly reduce the impact of the fault on the entire system.

[0064] In a series circuit, taking into account the uncertainty of device parameters changing with time and temperature, an intelligent algorithm can be used to dynamically adjust the action voltage of the voltage clamping circuit to make it more adaptable to the current system status and operating conditions, thereby improving the robustness and reliability of the system.

[0065] In addition to achieving indirect communication through network switches, a distributed control strategy can also be adopted to enable each driver to have a certain degree of autonomous decision-making ability. For example, each driver can also decide whether to execute a shutdown command and how to adjust its drive signal based on the locally monitored voltage and communication status, thereby improving the overall response speed and reliability of the system.

[0066] Considering the large amount of energy release that may be caused by overvoltage breakdown, the semiconductor power device of the present application can also integrate efficient thermal management mechanisms, such as heat sinks, liquid cooling systems and thermal protection circuits, to remove excess heat in a timely manner and prevent secondary failures caused by overheating.

[0067] In a specific embodiment, the driver is also used to collect and analyze the state parameters of the corresponding connected turn-off semiconductor device in real time through the monitoring unit, including but not limited to the temperature, voltage, current and conduction time of the device. These monitoring units can be sensors integrated in the driver, such as temperature sensors, voltage and current transformers, and timers, which transmit the heartbeat signal carrying these state parameters to other drivers through the isolated communication bus for further data processing and analysis.

[0068] The driver is also used to process the state parameters using a pre-designed intelligent algorithm. The algorithm may be based on one of the following technologies: Machine learning: learning the law of device parameter changes over time and temperature through training models (such as support vector machines, neural networks, or decision trees, etc.), predicting future states, and adjusting the action voltage of the voltage clamp circuit accordingly; Adaptive control: designing an adaptive controller that can automatically adjust the parameters of the control algorithm according to the parameter changes monitored in real time to optimize the action voltage of the voltage clamp circuit; Fuzzy logic control: using fuzzy logic systems to process uncertain parameters, such as the impact of temperature changes on device performance, and dynamically adjusting the action voltage of the voltage clamp circuit by setting a series of fuzzy rules.

[0069] After that, the driver adjusts the action voltage by controlling the impedance characteristics of the voltage-controlled variable resistor device (such as lightning arrester, Zener diode, etc.) in the voltage clamping circuit. This can be achieved by the following methods: Use adjustable resistors: Integrate adjustable resistors in the voltage clamping circuit, and adjust their resistance in real time through the control signal output by the intelligent algorithm, thereby changing the impedance of the entire circuit to achieve the purpose of adjusting the action voltage; Integrated digitally controlled voltage source: Add a digitally adjustable voltage source controlled by an intelligent algorithm to the circuit. When the algorithm detects that the action voltage needs to be adjusted, it dynamically adjusts the output voltage of the voltage source, thereby indirectly changing the behavior of the voltage clamping circuit; Combination of intelligent algorithms and electronic switches: Use electronic switches (such as MOSFET or IGBT) in parallel with multiple fixed resistance resistors. The intelligent algorithm selects resistors of different resistance values ​​to connect to the circuit according to the monitored parameters by controlling the on and off of the electronic switch, thereby achieving dynamic adjustment of the action voltage.

[0070] In this way, the action voltage of the voltage clamping circuit can be adjusted intelligently and dynamically, which can significantly improve the adaptability and stability of the power electronic system in the face of device parameter uncertainty and environmental changes, and effectively avoid system failures and safety risks caused by overvoltage breakdown. This method is not only applicable to IGCT, but can also be applied to the series circuit design of other semiconductor devices that can be turned off, such as GTO, SGTO, ETO and IETO.

[0071] In some embodiments, the driver may include a first turn-on circuit and a second turn-on circuit that are redundant with each other, wherein the first ends of the first turn-on circuit and the second turn-on circuit are electrically connected to the control end of the turnable semiconductor device, and the second ends of the first turn-on circuit and the second turn-on circuit are electrically connected to the output end of the turnable semiconductor device, respectively. When the voltage difference between the input and output terminals of the above-mentioned semiconductor device that can be turned off is not greater than the preset voltage threshold, and when the voltage difference between the input and control terminals of the above-mentioned semiconductor device that can be turned off is not greater than the preset voltage threshold, one of the above-mentioned first turn-on circuit and the above-mentioned second turn-on circuit is in a charging state (hereinafter referred to as the turn-on circuit in the charging state), and the other is not in a charging state (hereinafter referred to as the turn-on circuit not in the charging state), and both are inactive; when the voltage difference between the input and output terminals of the above-mentioned semiconductor device that can be turned off is greater than the preset voltage threshold, or when the voltage difference between the input and control terminals of the above-mentioned semiconductor device that can be turned off is greater than the preset voltage threshold, the turn-on circuit in the charging state starts to discharge and charges the turn-on circuit that is not in the charging state, so that the turn-on circuit that is not in the charging state quickly operates to control the above-mentioned semiconductor device that can be turned off to be turned on.

[0072] In some other optional embodiments, there is a driver with the highest priority among multiple drivers, and the driver is used to receive the operating status of the turnable semiconductor device fed back by other drivers. The driver is also used to obtain the operating status of the corresponding turnable semiconductor device and the overall environmental conditions of the semiconductor power device, and intelligently adjust the sending interval of the heartbeat signal. In high-risk situations such as high load of the turnable semiconductor device or large changes in ambient temperature, the above-mentioned driver shortens the heartbeat interval, and packages the shortened heartbeat interval information with the heartbeat signal before the shortening action and sends it to other drivers, so that other drivers operate according to the shortened heartbeat interval information; in low-risk situations such as low load of the turnable semiconductor device or small changes in ambient temperature, the above-mentioned driver increases the heartbeat interval, and packages the increased heartbeat interval information with the heartbeat signal before the increase action and sends it to other drivers, so that other drivers operate according to the increased heartbeat interval information, so as to improve the real-time monitoring and response capabilities of the system.

[0073] An embodiment of the present application further provides a converter, comprising: a plurality of bridge arms, each of the bridge arms comprising a plurality of any one of the above-mentioned semiconductor power devices connected in series.

[0074] Through the above embodiments, each bridge arm includes a plurality of the above semiconductor power devices connected in series. In the series circuit of the semiconductor power devices, the drivers of the turnable semiconductor devices send heartbeat signals regularly. When the heartbeat signal is not received, it is considered that the turnable semiconductor device corresponding to the driver that has not sent the heartbeat signal has failed. At this time, the driver of the turnable semiconductor device that has not failed controls the turnable semiconductor device to remain in the on state, thereby reducing the voltage across the voltage clamping circuit to be lower than the action voltage, avoiding the problem of failure of some devices in the series circuit of turnable semiconductor devices that share a voltage clamping circuit, triggering the voltage clamping circuit to break down the non-failed devices, preventing the failure range from further expanding, and solving the problems of high loss cost and maintenance cost of the converter.

[0075] The application of the semiconductor power device of the present application in the converter can not only achieve high-precision voltage control, but also, because the fault detection and protection mechanism are fully considered in the design of the semiconductor power device, the state of the turn-off semiconductor device can be effectively monitored by the driver through the sending and receiving of the heartbeat signal, ensuring that when the turn-off semiconductor device fails, other turn-off semiconductor devices in the series branch remain in the on state when receiving the shutdown command, avoiding the problem of breakdown, which is of great significance to the design and maintenance of power electronic systems.

[0076] Specifically, the multiple turn-off semiconductor devices in the above-mentioned bridge arm can constitute a half-bridge inverter circuit or a full-bridge inverter circuit.

[0077] Obviously, those skilled in the art should understand that the modules or steps of the present invention described above can be implemented by a general-purpose computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than here, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0078] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0079] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0080] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0081] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0082] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0083] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0084] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0085] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0086] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0087] The semiconductor power device of the present application has at least two turn-off semiconductor devices connected in series in a switch structure, the turn-off semiconductor devices are connected to the drivers one by one, and heartbeat signals are sent periodically between the drivers. When the driver does not receive the heartbeat signals of other drivers within a predetermined period, the turn-off semiconductor devices corresponding to the drivers are controlled to remain in a conducting state, and the voltage clamping circuit is connected in parallel at both ends of the series branch of the turn-off semiconductor devices. When the withstand voltage value of the turn-off semiconductor devices that have not failed in the series branch is less than the action voltage of the voltage clamping circuit and the voltage at both ends of the voltage clamping circuit is greater than the action voltage, the voltage clamping circuit will break down all the turn-off semiconductor devices that have not failed and cause them to fail. In the present application, heartbeat signals are periodically sent between drivers of the turn-off semiconductor devices in the series circuit. When the heartbeat signal is not received, it is considered that the turn-off semiconductor device corresponding to the driver that has not sent the heartbeat signal has failed. At this time, the driver of the turn-off semiconductor device that has not failed controls the turn-off semiconductor device to remain in the on state, thereby reducing the voltage across the voltage clamping circuit to be lower than the action voltage, avoiding the problem of failure of some devices in the series circuit of turn-off semiconductor devices that share a voltage clamping circuit triggering the voltage clamping circuit to break down the non-failed devices, preventing the failure range from further expanding, and solving the problem of high loss cost of turn-off semiconductor devices.

[0088] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor power device, characterized in that: include: A switch structure, comprising at least two turn-off semiconductor devices and at least two drivers, wherein at least two of the turn-off semiconductor devices are connected in series, a first end of the driver is electrically connected to a control end of the turn-off semiconductor device in a one-to-one correspondence, a second end of the driver is electrically connected to an output end of the turn-off semiconductor device in a one-to-one correspondence, the driver is used to periodically send a heartbeat signal to at least one other driver in the switch structure, and the driver is also used to control the corresponding turn-off semiconductor device to remain in a conducting state when the heartbeat signal of the other driver is not received within at least a predetermined period; A voltage clamping circuit is connected in parallel at both ends of at least two of the turn-off semiconductor devices. When the withstand voltage of the remaining turn-off semiconductor devices is less than the action voltage of the voltage clamping circuit and the voltage across the voltage clamping circuit is greater than the action voltage, the voltage clamping circuit breaks down all the remaining turn-off semiconductor devices in the switch structure. The remaining turn-off semiconductor devices are the turn-off semiconductor devices in the switch structure that have not failed due to short circuit.

2. The semiconductor power device according to claim 1, characterized in that: Each of the drivers is used to send the heartbeat signal to all other drivers in the switch structure, and is also used to determine the number of the heartbeat signals that have not been received within the predetermined period. When the number is greater than or equal to a predetermined threshold and the corresponding turn-off semiconductor device is in the on-state and receives a shutdown instruction, the corresponding turn-off semiconductor device is controlled to maintain the on-state, and the shutdown instruction is used to instruct to shut down the turn-off semiconductor device.

3. The semiconductor power device according to claim 1, characterized in that: The number of the turnable semiconductor devices and the drivers is an even number, and every two drivers in the switch structure send the heartbeat signal to each other at a regular interval. The driver is also used to control the corresponding turnable semiconductor device to remain in the on state when the heartbeat signal is not received within the predetermined period and the corresponding turnable semiconductor device is in the on state and a shutdown instruction is received, and the shutdown instruction is used to instruct to shut down the turnable semiconductor device.

4. The semiconductor power device according to claim 1, characterized in that: In the switch structure, any two of the drivers exchange the heartbeat signal through an isolated communication path.

5. The semiconductor power device according to claim 4, characterized in that: The isolated communication path includes one of the following: an optical coupling isolation path, a magnetic coupling isolation path, a capacitive coupling isolation path, a transformer isolation path or a digital isolation path.

6. The semiconductor power device according to claim 1, characterized in that: The switch structure further includes: A network switch communicates with all the drivers in the switch structure, and the driver exchanges the heartbeat signal with the other drivers through the network switch.

7. The semiconductor power device according to claim 1, characterized in that: The voltage clamping circuit includes one of the following: A lightning arrester, one end of which is electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and the other end of which is electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection; a Zener diode, wherein a cathode of the Zener diode is electrically connected to an input terminal of the semiconductor device that can be turned off at a head of the series connection, and an anode of the Zener diode is electrically connected to an output terminal of the semiconductor device that can be turned off at a tail of the series connection; A transient diode, wherein a cathode of the transient diode is electrically connected to the input terminal of the turn-off semiconductor device at the head of the series connection, and an anode of the transient diode is electrically connected to the output terminal of the turn-off semiconductor device at the tail of the series connection; The gate clamp circuit has one end electrically connected to the input end of the turn-off semiconductor device at the head of the series connection, and the other end electrically connected to the output end of the turn-off semiconductor device at the tail of the series connection.

8. The semiconductor power device according to claim 1, characterized in that: The switch structure further includes: A plurality of first voltage balancing circuits, corresponding one to one with the semiconductor devices that can be turned off, wherein the first voltage balancing circuits include a first resistor and an energy storage device, wherein a first end of the first resistor is electrically connected to an input end of the semiconductor device that can be turned off, a second end of the first resistor is electrically connected to a first end of the energy storage device, and a second end of the energy storage device is electrically connected to an output end of the semiconductor device that can be turned off; A plurality of second voltage-equalizing circuits correspond one-to-one to the turnable semiconductor devices, wherein the second voltage-equalizing circuits include a second resistor, wherein a first end of the second resistor is electrically connected to an input end of the turnable semiconductor device, and a second end of the second resistor is electrically connected to an output end of the turnable semiconductor device, and a resistance value of the second resistor is less than an equivalent resistance when the turnable semiconductor device is in a blocking state.

9. The semiconductor power device according to claim 1, characterized in that: The turn-off semiconductor device includes at least one of the following: IGBT, HEMT, MOSFET and turn-off thyristor, and the turn-off thyristor includes at least one of the following: IGCT, GTO, SGTO, ETO and IETO.

10. A converter, characterized in that: include: A plurality of bridge arms, each of the bridge arms comprising a plurality of semiconductor power devices according to any one of claims 1 to 9 connected in series.

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