Substrate processing method and substrate processing system

Abstract

This substrate processing method comprises: a step (a) in which a metal-containing resist on a substrate is subjected to wet development; and a step (b) in which the metal-containing resist is subjected to dry development. The metal-containing resist includes a first region that has been exposed and a second region that has not been exposed. In the step (a), one of the first region and the second region is partially removed in the thickness direction of the one region. In the step (b), the remaining portion of the one region is removed.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a substrate processing method and a substrate processing system. Background Art

[0002] EUV (extreme ultraviolet) light is used for exposure of the photoresist. Patent Document 1 below discloses a metal-containing resist as a photoresist exposed by EUV light, and discloses dry development and wet development as development thereof.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application No. 2021-523403 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technique for suppressing pattern destruction after development of a metal-containing resist.

[0008] Technical solutions for solving technical problems

[0009] In an exemplary embodiment, a substrate processing method is provided. The substrate processing method includes: a process (a) of wet developing a metal-containing resist of a substrate; and a process (b) of dry developing the metal-containing resist. The metal-containing resist includes an exposed first region and an unexposed second region. In process (a), one of the first region and the second region is partially removed in the thickness direction of the one region. In process (b), the remaining portion of one region is removed.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment, it is possible to suppress the destruction of a pattern after development of a metal-containing resist. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 is a flow chart of a substrate processing method according to an exemplary embodiment.

[0013] Figure 2 (a)~ Figure 2 The (d) are respectively applied Figure 1 A partially enlarged cross-sectional view of an example of a substrate in a corresponding step of the substrate processing method shown.

[0014] Figure 3 (a) and Figure 3 (b) are applied Figure 1A partially enlarged cross-sectional view of an example of a substrate in a corresponding step of the substrate processing method shown.

[0015] Figure 4 (a) and Figure 4 (b) are applied Figure 1 A partially enlarged cross-sectional view of an example of a substrate in a corresponding step of the substrate processing method shown.

[0016] Figure 5 (a) and Figure 5 (b) are applied Figure 1 A partially enlarged cross-sectional view of an example of a substrate in a corresponding step of the substrate processing method shown.

[0017] Figure 6 is a diagram showing a substrate processing system according to an exemplary embodiment.

[0018] Figure 7 FIG. 1 is a diagram showing a substrate processing system according to another exemplary embodiment.

[0019] Figure 8 FIG. 1 is a diagram showing a substrate processing system according to still another exemplary embodiment.

[0020] Fig. 9 FIG. 1 is a diagram showing a substrate processing system according to still another exemplary embodiment. DETAILED DESCRIPTION

[0021] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0022] Figure 1 is a flow chart of a substrate processing method according to an exemplary embodiment. Figure 2 (a)~ Figure 2 (d) Figure 3 (a) and Figure 3 (b) Figure 4 (a) and Figure 4 (b), and Figure 5 (a) and Figure 5 (b) are applied Figure 1 A partially enlarged cross-sectional view of an example of a substrate in a corresponding step of the substrate processing method shown. Figure 1 The substrate processing method shown (hereinafter referred to as "method MT") includes step STa and step STb. Method MT may further include one or more steps among step STc to step STi.

[0023] In step STc, a resist film PR is formed on the base region UR to obtain Figure 2The substrate W shown in (a) is shown in FIG. The base region UR includes one or more films to which a mask pattern formed by a resist film PR is transferred. The resist film PR is a metal-containing resist film exposed by EUV (extreme ultraviolet) light. The resist film PR contains a metal such as tin (Sn). The resist film PR can be formed by a dry process such as ALD (atomic layer deposition), CVD (chemical vapor deposition) or PVD (physical vapor deposition), or by a wet process such as spin coating.

[0024] In one embodiment, step STd may be performed after step STc. In step STd, the substrate W is heated. That is, in step STd, the resist film PR is baked. The baking process in step STd is also called post apply bake: PAB. The heating of the substrate W can be performed by at least one heating mechanism such as a heater in a substrate support body supporting the substrate W, a lamp heater, etc. In step STd, the substrate W may be heated in an air atmosphere or in an inert atmosphere. In step STd, the substrate W may be heated at a temperature of 50°C to 250°C or at a temperature of 50°C to 200°C. By heating the substrate W in step STd, as Figure 2 As shown in (b), a substrate W having a cured resist film PRD is obtained.

[0025] Next, step STe is performed. In step STe, the resist film PR or the resist film PRD is exposed. In step STe, a mask (reticle) for exposure is placed on the substrate W, and EUV light is irradiated to the resist film PR or the resist film PRD through the mask. Figure 2 As shown in (c), a substrate W having an exposed resist film PRE is obtained. The resist film PRE includes a first region R1 and a second region R2. The first region R1 is an exposed region. The second region R2 is an unexposed region. That is, the second region R2 is a region shielded by the mask in step STe.

[0026] In one embodiment, step STf may be performed after step STe. In step STf, the substrate W exposed in step STe is heated. That is, in step STf, the resist film PRE is baked. The baking process in step STe is also called post-exposure baking (PEB). In step STf, the substrate W is heated using at least one heating mechanism such as a heater in a substrate support body supporting the substrate W, a lamp heater, etc. In step STf, the substrate W may be heated in at least one atmosphere of air, nitrogen, a rare gas, and oxygen. In addition, in step STf, the substrate W may be heated in an atmospheric pressure environment or a reduced pressure environment. In step STf, the substrate W may be heated to a first temperature. The first temperature may be above 150°C and below 250°C, may be above 160°C and below 240°C, may be above 170°C and below 230°C, for example, 180°C. In step STf, the substrate W may be gradually or stagedly heated to its target temperature (for example, 180°C). In step STf, the substrate W is heated, such as Figure 2 As shown in (d), a substrate W having a resist film PRF is obtained. According to the step STf, a resist film PRF having improved film quality with respect to the resist film PRE can be obtained, and the selectivity (ie, contrast) of development described later can be improved.

[0027] Next, step STa is performed. In step STa, the resist film PRE or the resist film PRF is developed, and one of the first region R1 and the second region R2 is partially removed in the thickness direction thereof. Figure 3 As shown in (a), a substrate W having a partially developed resist film PRA is obtained. In the step STa, the development when the second region R2 is removed is negative development, and the development when the first region R1 is removed is positive development. Hereinafter, a region partially removed in the step STa is referred to as a region RD. In addition, in the example shown in the figure, the second region R2 is the region RD, but the first region R1 may also be the region RD.

[0028] The development in step STa can be wet development or dry development. In step STa, when the second region R2 is removed by wet development (in the case of negative development), the solvent in the developer can be an aromatic compound (e.g., benzene, xylene, toluene), an ester (e.g., propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactate, n-butyl acetate, butyrolactone), an alcohol (e.g., 4-methyl-2-pentanol, 1-butanol, isopropanol, 1-propanol, methanol), a ketone (e.g., methyl ethyl ketone, acetone, cyclohexanone, 2-heptanone, 2-octanone), an ether (e.g., tetrahydrofuran, dioxane, anisole), etc.

[0029] In step STa, when the first region R1 is removed by wet development (in the case of positive development), an acid or alkali aqueous solution can be used as a developer. In this case, the developer can be a quaternary ammonium hydroxide composition, such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or a combination thereof. The quaternary ammonium hydroxide can be represented by the formula R4NOH, wherein R is methyl, ethyl, propyl, butyl, or a combination thereof.

[0030] In the wet development of step STa, an additive can be used together with the developer. The additive can be a dissolved salt containing cations and anions, wherein the cation can be selected from ammonium, d-block metal cations (hafnium, zirconium, lanthanum, etc.), f-block metal cations (cerium, lutetium, etc.), p-block metal cations (aluminum, tin, etc.), alkali metals (lithium, sodium, potassium, etc.) and combinations thereof, and the anion can be selected from fluorine, chlorine, bromine, iodine, nitric acid, sulfuric acid, phosphoric acid, silicic acid, boric acid, peroxide, butoxy, formic acid, oxalic acid, ethylenediaminetetraacetic acid (EDTA), tungstic acid, molybdic acid, etc. and combinations thereof. As other additives, for example, a chelating agent in a molecular state can be used. The chelating agent in a molecular state is, for example, a polyamine, an alcohol amine, an amino acid, a carboxylic acid, or a combination thereof.

[0031] In addition, during the wet development in step STa, one or more of the type of developer, the concentration of the developer (i.e., the dilution of the developer and the additive), the temperature of the developer, the rotation or movement speed of the substrate support supporting the substrate W, and the acceleration of the rotation or movement of the substrate support can be changed. For example, in step STa, a developer with high solubility of the resist film can be used, and then a developer with low solubility of the resist film can be used. In step STa, a developer with high concentration can be used, and then a developer with low concentration can be used. In step STa, a developer with high temperature (e.g., 30°C or more and 90°C or less) can be used, and then a developer with low temperature (e.g., 10°C or more and 25°C or less) can be used. In step STa, the rotation speed of the substrate support can be set to a low speed (e.g., 50 rpm or more and 250 rpm or less), and then changed to a high speed (e.g., 500 rpm or more and 1000 rpm or less).

[0032] In the case of dry development in step STa, at least one developing gas is supplied to the substrate W. The developing gas may include at least one selected from hydrogen bromide (HBr), hydrogen fluoride (HF), hydrogen chloride (HCl), boron trichloride (BCl3), organic acids (e.g., carboxylic acids, alcohols), and β-dicarbonyl compounds. The carboxylic acid in the developing gas may include, for example, formic acid (HCOOH), acetic acid (CH3COOH), trichloroacetic acid (CCl3COOH), monofluoroacetic acid (CFH2COOH), difluoroacetic acid (CF2FCOOH), trifluoroacetic acid (CF3COOH), chlorodifluoroacetic acid (CClF2COOH), sulfur-containing acetic acid, thioacetic acid (CH3COSH), mercaptoacetic acid (HSCH2COOH), trifluoroacetic anhydride ((CF3CO)2O) and acetic anhydride ((CH3CO)2O). The alcohol in the developing gas may include, for example, perfluorotert-butyl alcohol ((CF3)3COH). The β-dicarbonyl compound in the developing gas may be, for example, acetylacetone (CH3C(O)CH2C(O)CH3), trichloroacetylacetone (CCl3C(O)CH2C(O)CH3), hexachloroacetylacetone (CCl3C(O)CH2C(O)CCl3), trifluoroacetylacetone (CF3C(O)CH2C(O)CH3), hexafluoroacetylacetone (HFAc, CF3C(O)CH2C(O)CF3). In step STa, development may be performed by a thermal reaction between the developing gas and the region RD, or by a chemical reaction between chemical species from plasma generated from the developing gas and the region RD.

[0033] Furthermore, during the dry development in step STa, one or more development parameters including the temperature of the substrate W or the substrate support, the pressure in the chamber where the development is performed, the flow rate of the development gas, the type of the development gas, and the residence time of the development gas on the substrate W may be changed. Furthermore, these one or more development parameters may be changed periodically. In one example, in step STa, the temperature of the substrate support may be set to a first temperature (e.g., 10° C. or higher and 30° C. or lower), and then changed to a second temperature (e.g., 40° C. or higher and 100° C. or lower).

[0034] When dry development is performed in step STa, step STg may be performed after step STa. Alternatively, when wet development is performed in step STa, step STg may be performed after step STa.

[0035] In step STg, the substrate W is heated. That is, in step STg, the resist film PRA is baked. In step STg, the substrate W is heated using any heating mechanism such as a heater in a substrate support body supporting the substrate W, a lamp heater, etc. In step STg, the substrate W can be heated in at least one atmosphere of the atmosphere, nitrogen, a rare gas, and oxygen. In addition, in step STg, the substrate W can be heated in an atmospheric pressure environment or a reduced pressure environment. In step STg, the substrate W is heated to a temperature higher than the temperature of the substrate W in step STf. In step STg, the substrate W can be heated to a second temperature. The second temperature can be higher than the first temperature. For example, the second temperature can be higher than 5°C or higher than 10°C than the first temperature. In one embodiment, the second temperature can be above 170°C and below 300°C, or above 180°C and below 280°C, or above 190°C and below 230°C, for example 200°C. In step STg, the substrate W may be heated gradually or in stages to a target temperature (eg, 200° C.). Figure 4 As shown in (a), a substrate W having a resist film PRG is obtained.

[0036] According to the process STg, a resist film PRG having a reduced amount of impurities compared to the resist film PRA is obtained. In addition, according to the process STg, a resist film PRG having an improved film density or promoted oxidation of the compound is obtained compared to the resist film PRA, and the development selectivity (i.e., contrast) in the later-described process STb is improved. In addition, the dimensional deviation of the resist pattern obtained by the development of the process STb, such as line width deviations such as LWR (Line Width Roughness) and LER (Line Edge Roughness), is improved. In addition, according to the process STg, the reaction is promoted in the unsaturated reaction portion of the resist film PRA caused by exposure. As a result, the verticality of the side wall of the resist pattern after the development of the process STb is improved.

[0037] Next, step STb is performed. In step STb, the resist film PRA or the resist film PRG is dry developed, and the remaining portion of the region RD is removed. In step STb, in addition to the remaining portion of the region RD, a portion of the base region UR may also be removed. In the dry development of step STb, at least one developing gas is supplied to the substrate W. The developing gas may include at least one selected from hydrogen bromide (HBr), hydrogen fluoride (HF), hydrogen chloride (HCl), boron trichloride (BCl3), an organic acid (e.g., a carboxylic acid, an alcohol), and a β-dicarbonyl compound. The carboxylic acid in the developing gas may include, for example, at least one selected from formic acid (HCOOH), acetic acid (CH3COOH), trichloroacetic acid (CCl3COOH), monofluoroacetic acid (CFH2COOH), difluoroacetic acid (CF2FCOOH), trifluoroacetic acid (CF3COOH), chlorodifluoroacetic acid (CClF2COOH), sulfur-containing acetic acid, thioacetic acid (CH3COSH), mercaptoacetic acid (HSCH2COOH), trifluoroacetic anhydride ((CF3CO)2O) and acetic anhydride ((CH3CO)2O). The alcohol in the developing gas may include, for example, perfluorotert-butyl alcohol ((CF3)3COH). The β-dicarbonyl compound in the developing gas may be, for example, acetylacetone (CH3C(O)CH2C(O)CH3), trichloroacetylacetone (CCl3C(O)CH2C(O)CH3), hexachloroacetylacetone (CCl3C(O)CH2C(O)CCl3), trifluoroacetylacetone (CF3C(O)CH2C(O)CH3), hexafluoroacetylacetone (HFAc, CF3C(O)CH2C(O)CF3). In step STb, development may be performed by a thermal reaction between the developing gas and the region RD, or by a chemical reaction between chemical species from plasma generated from the developing gas and the region RD.

[0038] In addition, similarly to step STa, during the dry development in step STb, one or more development parameters including the temperature of the substrate W or the substrate support, the pressure in the chamber where the development is performed, the flow rate of the development gas, the type of the development gas, and the residence time of the development gas on the substrate W may be changed. In addition, these one or more development parameters may be changed periodically. In one example, in step STb, the temperature of the substrate support may be set to a first temperature (e.g., 10° C. or higher and 30° C. or lower), and then changed to a second temperature (e.g., 40° C. or higher and 100° C. or lower).

[0039] Through step STb, Figure 3 (b) or Figure 4As shown in (b), the remaining portion of the region RD is removed to obtain a substrate W having a resist pattern RP. The resist pattern RP is formed by the first region R1 and the other region of the second region R2. In addition, in the example shown in the figure, the resist pattern RP is formed by the first region R1, but the resist pattern RP can also be formed by the second region R2.

[0040] In one embodiment, after step STb, step STh and / or step STi may be performed.

[0041] In the step STh, the resist pattern RP is cured. Figure 5 As shown in (a), the surface of the resist pattern RP is modified. As a result, a modified region CS is formed. The modified region CS includes the surface of the resist pattern RP.

[0042] In step STh, a gas supply process may be performed. In the gas supply process, the surface of the resist pattern RP is modified by using a modified gas supplied to the resist pattern RP. Alternatively, in step STh, a plasma process may be performed. In the plasma process, the surface of the resist pattern RP is modified by using a plasma formed from the modified gas. The gas used in step STh may include at least one gas selected from a fluorine-containing gas, an oxygen-containing gas and a rare gas. The fluorine-containing gas may be a fluorocarbon gas and / or a nitrogen trifluoride gas. The oxygen-containing gas may be an O2 gas. In step STh, the substrate W may be further heated.

[0043] When the modifying gas used in step STh includes a fluorine-containing gas, metal fluoride is formed in the modified region CS. When the resist pattern RP includes tin, the modified region CS includes nonvolatile tin fluoride, and the surface of the resist pattern RP is stabilized by the tin fluoride, and the surface of the resist pattern RP is cured.

[0044] When the modified gas used in step STh contains oxygen, metal oxide and / or metal hydroxide are formed in the modified region CS. When the resist pattern RP contains tin, the modified region CS contains tin oxide and / or tin hydroxide, and the surface of the resist pattern RP is stabilized by the tin oxide and / or tin hydroxide, and the surface of the resist pattern RP is cured.

[0045] Alternatively, a heat treatment may be performed in the step STh. That is, a baking treatment of the resist pattern RP may be performed. By such a heat treatment, the surface of the resist pattern RP is modified to form a modified region CS.

[0046] Alternatively, in the step STh, the resist pattern RP may be irradiated with an electron beam, a laser, or an electromagnetic wave. In this case, impurities in the modified region CS are removed, and a cross-linking reaction between tin and oxygen is induced. As a result, in the modified region CS, the film density of the resist pattern RP is increased, the surface of the resist pattern RP is stabilized, and the surface of the resist pattern RP is cured.

[0047] According to the process STh, the erosion and / or corrosion of the resist pattern RP is suppressed. In addition, the destruction of the resist pattern RP is suppressed. In addition, the pattern width of the resist pattern RP can be reduced. In addition, the dimensional deviation of the resist pattern RP, such as the line width deviation of LWR and LER, is improved. In addition, the resistance of the resist pattern RP to the etching of the base region UR to be performed later is improved.

[0048] In the process STi, if Figure 5 As shown in (b), a film CA covering the surface of the resist pattern RP is formed. The film CA may be a silicon-containing film, a carbon-containing film or a tin oxide film. The silicon-containing film may be a silicon oxide film or a silicon film. The film CA may be formed by CVD (thermal CVD or plasma CVD), ALD (atomic layer deposition) or PVD. In addition, the ALD method repeatedly performs a cycle including the following steps: a first step of depositing a precursor on the surface of a substrate W using a first gas (precursor gas); a second step of purging the chamber; a third step of modifying the precursor using a second gas (reaction gas); and a fourth step of purging the chamber. The ALD of step STi may also be thermal ALD. In the third step of thermal ALD, the reaction between the precursor and the second gas is promoted by heating. Alternatively, the ALD of step STi may also be plasma ALD. In the third step of plasma ALD, plasma of the second gas is generated, and active species from the plasma are supplied to the precursor.

[0049] When the film CA is a silicon oxide film, it can be formed by thermal CVD or plasma CVD using a mixed gas of a silicon-containing gas and an oxygen-containing gas. Alternatively, when the film CA is a silicon oxide film, it can be formed by thermal ALD or plasma ALD using a silicon-containing gas as a first gas and an oxygen-containing gas as a second gas. In addition, the silicon-containing gas is, for example, a silicon halogenated gas such as SiF4 gas and SiCl4 gas, an aminosilane gas, etc. The oxygen-containing gas is, for example, O2 gas, O3 gas, CO gas, CO2 gas, etc.

[0050] In the case where the film CA is a carbon-containing film, it can be formed by plasma CVD using hydrocarbon gases such as CH4 gas and C2H4 gas. Alternatively, in the case where the film CA is a carbon-containing film, it can be formed by thermal CVD or thermal ALD using a first gas containing isocyanate, carboxylic acid or carboxylic acid halide and a second gas having amine or hydroxyl group. Alternatively, in the case where the film CA is a carbon-containing film, it can be formed by thermal CVD or thermal ALD using a first gas containing carboxylic anhydride and a second gas having amine. Alternatively, in the case where the film CA is a carbon-containing film, it can be formed by thermal CVD or thermal ALD using a first gas containing bisphenol A and a second gas having diphenyl carbonate or epichlorohydrin. Alternatively, in the case where the film CA is a carbon-containing film, it can be formed by thermal CVD, plasma CVD, thermal ALD or plasma ALD using a first gas containing epoxide, carboxylic acid, carboxylic acid halide, carboxylic anhydride, isocyanate or phenol and a second gas containing an inorganic compound gas having an NH bond, an inert gas, N2 and H2, H2O, or H2 and O2. Alternatively, when the film CA is a carbon-containing film, it can be formed by plasma CVD using a gas containing a fluorocarbon such as CF 4 , C 4 F 8 , C 3 F 8 , or C 4 F 6 .

[0051] In the case where the film CA is a tin oxide film, it can be formed by thermal CVD, plasma CVD, thermal ALD or plasma ALD using a tin-containing gas as the first gas and an oxygen-containing gas as the second gas. The first gas contains a tin alkane compound, an oxygen-containing tin compound, an oxygen-containing tin compound, a nitrogen-containing tin compound, or a tin halide compound. Tin alkane compounds are, for example, tin alkane, tetramethyltin alkane, tributyltin alkane, phenyltrimethyltin alkane, tetravinyltin alkane, dimethyldichlorotin alkane, butyltrichlorotin alkane, trichlorophenyltin alkane, etc. Oxygen-containing tin compounds are, for example, tributyl methoxytin, tert-butoxytin, dibutyltin diacetate, triphenyltin acetate, tributyltin oxide, triphenyltin acetate, triphenyltin hydroxide, butyltin chloride dihydroxide, acetylacetonate tin, etc. Nitrogen-containing tin compounds are dimethylaminotrimethyltin, tris(dimethylamino)tert-butyltin, trimethyltin azide, tetra(dimethylamino)tin, N,N'-di-tert-butyl-2,3-diaminobutane tin (II), etc. The tin halide compound is, for example, tin chloride, tin bromide, tin iodide, dimethyltin dichloride, butyltin trichloride, phenyltin trichloride, etc. The second gas includes, for example, H2O, H2O2, O3, O2, etc.

[0052] In the case where the film CA is a silicon film, the film CA can be formed using a capacitively coupled plasma processing device. In this case, in the chamber of the capacitively coupled plasma processing device, plasma is generated from an inactive gas (e.g., a rare gas or hydrogen), and a negative voltage is applied to the upper electrode. As a result, ions from the plasma collide with the top plate of the upper electrode, and silicon contained in the top plate is released from the top plate. The released top plate is deposited on the surface of the substrate W placed on the substrate support in the chamber, forming the film CA.

[0053] Through this process STi, the erosion and / or corrosion of the resist pattern RP is suppressed. In addition, the phenomenon that the resist pattern RP is destroyed due to moisture absorption is suppressed. In addition, the pattern width of the resist pattern RP can be expanded. In addition, the dimensional deviation of the resist pattern RP, such as the line width deviation of LWR and LER, is improved. In addition, the resistance of the resist pattern RP to the etching of the base region UR to be performed later is improved.

[0054] In the method MT, when wet development is performed in the step STa, the time required for development is shortened compared to dry development. In addition, in the method MT, a portion of the region RD in the thickness direction is removed in the step STa, and the remaining portion of the region RD is removed by dry development in the step STb. Therefore, in the method MT, the bottom of the base region UR and other regions where the resist pattern RP is formed are not exposed to the developer. Therefore, according to the method MT, the destruction of the resist pattern RP is suppressed.

[0055] Below, refer to Figures 6 to 9 , describing several exemplary embodiments of substrate processing systems.

[0056] Figure 6 The substrate processing system PSA shown can be used in the method MT. The substrate processing system PSA comprises at least one stage TB1, a loading module LM1, a resist film forming unit RU, an interface module IFM, an exposure module EM, a transport module TM, process modules PM1 to PM6, a load lock module LLM, a loading module LM2, at least one stage TB2 and a control unit MC.

[0057] At least one mounting table TB1 is disposed along the loader module LM1. A cassette container CST can be mounted on the at least one mounting table TB1. The cassette container CST is configured to accommodate a substrate W having a base region UR therein.

[0058] The loading module LM1 includes a chamber and a conveying device. The interior of the chamber of the loading module LM1 can be set to an atmospheric atmosphere, and its pressure can be set to atmospheric pressure. The conveying device of the loading module LM1 includes a conveying robot. The conveying device of the loading module LM1 is configured to be able to convey the substrate W in the cassette container CST to the resist film forming unit RU.

[0059] The resist film forming unit RU includes a resist film forming module RFM and a heating module PEM. The resist film forming module RFM is a device configured to form a resist film PR on the base region UR of the substrate W in the step STc. The resist film forming module RFM may be a device configured to form the resist film PRF by a wet process such as spin coating. In addition, the interior of the resist film forming unit RU may be set to an atmospheric atmosphere, and its pressure may be set to atmospheric pressure.

[0060] The heating module PEM is a device configured to heat the substrate W in the step STd. That is, the heating module PEM is a device configured to perform a baking process on the resist film PR in the step STd. The heating module PEM has any heating mechanism such as at least one of a heater in a substrate support body supporting the substrate W and a lamp heater. The heating module PEM is used to form a substrate W having a cured resist film PRD.

[0061] The interface module IFM is arranged between the resist film forming unit RU and the exposure module EM, and is also arranged between the exposure module EM and the conveying module TM. The interface module IFM includes a chamber and a conveying device. The interface module IFM is connected to the resist film forming unit RU via a gate, is connected to the exposure device via a gate, and is connected to the conveying module TM via a gate. The interface module IFM can be configured to manage the atmosphere, humidity, temperature, etc. inside its chamber.

[0062] The transport device of the interface module IFM includes a transport robot. The transport device of the interface module IFM is configured to be able to transport the substrate W from the resist film forming unit RU to the exposure module EM, and to transport the substrate from the exposure module EM to the transport module TM.

[0063] The exposure module EM is an exposure device configured to expose the resist film using EUV light in the step STe. The exposure of the resist film by the exposure module EM forms a substrate W having an exposed resist film PRE.

[0064] The transport module TM includes a chamber and a transport device. The chamber of the transport module TM is configured to be decompressible. The transport device of the transport module TM includes a transport robot. The transport device of the transport module TM is configured to be able to transport the substrate W received from the interface module IF. The transport device of the transport module TM is configured to be able to transport the substrate W between any two of the process modules PM1 to PM6, and between any one of the process modules PM1 to PM6 and the loading lock module LLM.

[0065] The processing modules PM1-PM6 include at least one developing module and at least one heating module.

[0066] One of the processing modules PM1 to PM6 may be a heating module configured to heat the substrate W in step STf. That is, one of the processing modules PM1 to PM6 may be a heating module configured to perform a baking process on the resist film PRE in step STf. The heating module used in step STf has any heating mechanism including at least one of a heater, a lamp heater, etc., in a substrate support body supporting the substrate W. The heating module used in step STf may also include a chamber and a gas supply unit. The substrate support body may be rotatably arranged in the chamber. The rotation speed of the substrate support body may be configured to be changeable. In addition, the gas supply unit may be configured to supply at least one of atmosphere (air), nitrogen, rare gas, and oxygen into the chamber. Using the heating module used in step STf, a substrate W having a resist film PRF is produced.

[0067] One of the process modules PM1 to PM6 is a developing module used in the development of step STa. The developing module used in step STa manufactures a substrate W having a resist film PRA.

[0068] In the case where the development in step STa is wet development, the development module used in step STa is a wet development module configured to perform wet development. The wet development module includes a chamber, a substrate support, and a developer supply unit. The substrate support is configured to support the substrate in the chamber. The substrate support may be rotatable, and its rotation speed may be changeable. In addition, the developer supply unit is configured to supply developer to the substrate W on the substrate support. At least one of the type, concentration, and temperature of the developer may be changeable.

[0069] In the case where the development in step STa is dry development, the development module used in step STa is a dry development module configured to perform dry development. The dry development module used in step STa includes a chamber, a substrate support, and a gas supply unit. The interior of the chamber can be decompressed. The substrate support is configured to support the substrate in the chamber. The gas supply unit is configured to supply the developing gas. The dry development module can perform development by a thermal reaction between the developing gas and the region RD. Alternatively, the dry development module can perform development by a chemical reaction between chemical species in the plasma generated from the developing gas and the region RD. In this case, the dry development module has a plasma generating unit. The plasma generating unit can generate plasma from the developing gas in the chamber. Alternatively, chemical species can be supplied to the substrate W in the chamber from plasma generated from the developing gas by the plasma generating unit outside the chamber.

[0070] One of the processing modules PM1 to PM6 may be a heating module for heating the substrate W in step STg. That is, one of the processing modules PM1 to PM6 may be a heating module configured to perform a baking process on the resist film PRA in step STg. The heating module used in step STg has any heating mechanism including at least one of a heater, a lamp heater, etc., in a substrate support body supporting the substrate W. The heating module used in step STg may include a chamber and a gas supply unit. The substrate support body may be rotatably arranged in the chamber. The rotation speed of the substrate support body may be configured to be changeable. In addition, the gas supply unit may be configured to supply at least one of atmosphere (air), nitrogen, rare gas, and oxygen into the chamber. Using the heating module used in step STg, a substrate W having a resist film PRG is manufactured. In addition, the heating module used in step STf and the heating module used in step STg may be the same processing module or different processing modules.

[0071] One of the processing modules PM1 to PM6 is a dry developing module for developing in step STb. The dry developing module used in step STb is configured to be able to perform dry development. The dry developing module used in step STb includes a chamber, a substrate support, and a gas supply unit. The interior of the chamber can be decompressed. The substrate support is configured to be able to support the substrate in the chamber. The gas supply unit is configured to be able to supply developing gas. The dry developing module can perform development by a thermal reaction between the developing gas and the region RD. Alternatively, the dry developing module can perform development by a chemical reaction between chemical species in the plasma generated from the developing gas and the region RD. In this case, the dry developing module also includes a plasma generating unit. The plasma generating unit can generate plasma from the developing gas in the chamber. Alternatively, chemical species can be supplied to the substrate W in the chamber from the plasma generated from the developing gas by the plasma generating unit outside the chamber. Using the dry developing module used in step STb, a substrate W having a resist pattern RP is produced.

[0072] In one embodiment, the dry developing module used in step STb may include a heating mechanism. The heating mechanism may be a dry developing module having at least one heating mechanism of a heater, a lamp heater, etc. in a substrate support body supporting the substrate W. The dry developing module having a heating mechanism and used in step STb may be used to heat the substrate W in step STg. In addition, steps STa, step STg, and step STb may be performed in a dry developing module having a heating mechanism and used in step STb. In addition, steps STf, step STa, step STg, and step STb may be performed in a dry developing module having a heating mechanism and used in step STb.

[0073] One of the process modules PM1 to PM6 may be a device configured to be able to perform a curing process on the resist pattern RP in the step STh. The reformed region CS is formed by the process module used in the step STh.

[0074] The processing module used in step STh may be configured to perform the above-mentioned gas supply process. In this case, the processing module used in step STh includes a chamber, a substrate support and a gas supply unit. The interior of the chamber may be decompressed. The substrate support is configured to support the substrate in the chamber. The gas supply unit is configured to supply a modified gas into the chamber. The processing module used in step STh may also include a heating mechanism for heating the substrate W.

[0075] Alternatively, the processing module used in step STh may be configured to perform the above-mentioned plasma processing. In this case, the processing module used in step STh further includes a plasma generating unit. The plasma generating unit may generate plasma from the modified gas in the chamber. Alternatively, chemical species may be supplied to the substrate W in the chamber from plasma generated from the modified gas by the plasma generating unit outside the chamber.

[0076] Alternatively, the processing module used in the step STh may be a heating module configured to perform the above-mentioned heating treatment. Furthermore, the heating modules used in two or more of the steps STf, STg, and STh may be the same processing module. Alternatively, the heating modules used in the steps STf, STg, and STh may be different processing modules. Furthermore, in the case where the substrate processing system PSD includes more than two heating modules, these heating modules may be stacked.

[0077] One of the processing modules PM1 to PM6 is a film forming module configured to form a film CA in step STi. The film forming module used in step STi includes a chamber, a substrate support, and a gas supply unit. The interior of the chamber can be depressurized. The substrate support is configured to support a substrate in the chamber. The gas supply unit is configured to supply gas used in step STi into the chamber. The film forming module used in step STi is configured to form the film CA by thermal CVD, plasma CVD, thermal ALD, or plasma ALD. When the film CA is formed by thermal CVD or thermal ALD, the film forming module used in step STi also includes a heating mechanism configured to heat the substrate W. When the film CA is formed by plasma CVD or plasma ALD, the film forming module used in step STi also includes a plasma generating unit.

[0078] The load lock module LLM is disposed between the loading module LM2 and the conveying module TM. The load lock module LLM provides a pre-decompression chamber. The load lock module LLM is connected to the conveying module TM via a gate, and is connected to the loading module LM2 via a gate.

[0079] The loading module LM2 includes a chamber and a conveying device. The interior of the chamber of the loading module LM2 can be set to an atmospheric atmosphere, and its pressure can be set to atmospheric pressure. The conveying device of the loading module LM2 includes a conveying robot. The conveying device of the loading module LM2 is configured to be able to convey the substrate W between the loading lock module LLM and the cassette container FP described later.

[0080] At least one mounting table TB2 is arranged along the loader module LM2. A cassette container FP can be mounted on at least one mounting table TB2. The cassette container FP is a container such as a FOUP (Front Opening Unified Pod) and is configured to store substrates W therein.

[0081] The control unit MC may be a computer including a storage unit such as a processor and a memory, an input device, a display device, a signal input and output interface, etc. The control unit MC is configured to be able to control various parts of the substrate processing system. The storage unit of the control unit MC stores a control program and scheme data. The control program is executed by the processor of the control unit MC to perform various processes in the substrate processing system. The processor of the control unit MC executes the control program and controls various parts of the substrate processing system according to the scheme data, thereby executing the steps STa and STb of the method MT or all the steps of the method MT by the substrate processing system.

[0082] In one embodiment, the control unit MC causes the step STa of implementing wet development or dry development and the step STb of implementing dry development to be performed. The control unit MC may also cause the step STf of heating the exposed substrate W to be performed before the step STa. In one embodiment, the control unit MC may also cause the step STg of heating the substrate W to be performed between the step STa and the step STb. In this case, the control unit MC can set the temperature of the substrate W in the step STg to be higher than the temperature of the substrate W in the step STf. In addition, the control unit MC may also cause one or more of the other steps of the method MT to be performed.

[0083] In another embodiment, the control unit MC causes the step STa of performing dry development, the step STg of heating the substrate W, and the step STb of performing dry development to be performed. The control unit MC may also cause the step STf of heating the exposed substrate W to be performed before the step STa. The control unit MC may set the temperature of the substrate W in the step STg to be higher than the temperature of the substrate W in the step STf. The control unit MC may also cause one or more of the other steps of the method MT to be performed.

[0084] Reference Figure 7 . Figure 7 The substrate processing system PSB shown can be used for the method MT. In the following, the substrate processing system PSB is explained from the perspective of the difference between the substrate processing system PSB and the substrate processing system PSA.

[0085] The substrate processing system PSB includes a resist film forming unit RUB in place of the resist film forming unit RU. In addition, the substrate processing system PSB also includes a load lock module LLMB. In addition, in the substrate processing system PSB, at least one of the processing modules PM1 to PM6 is the above-mentioned heating module used in step STg.

[0086] The load lock module LLMB is disposed between the loader module LM1 and the resist film forming unit RUB. The load lock module LLMB provides a pre-decompression chamber. The load lock module LLMB is connected to the loader module LM1 via a gate, and is connected to the resist film forming unit RUB via a gate.

[0087] The resist film forming unit RUB includes a dry developing module configured to perform dry developing in step STa. The dry developing module used in step STa includes a chamber, a substrate support and a gas supply unit. The interior of the chamber can be decompressed. The substrate support is configured to support the substrate in the chamber. The gas supply unit is configured to supply developing gas. The dry developing module can perform development by a thermal reaction between the developing gas and the region RD. Alternatively, the dry developing module can perform development by a chemical reaction between chemical species in the plasma generated from the developing gas and the region RD. In this case, the dry developing module has a plasma generating unit. The plasma generating unit can generate plasma from the developing gas in the chamber. Alternatively, plasma can be generated from the developing gas using the plasma generating unit outside the chamber, and chemical species can be supplied to the substrate W in the chamber.

[0088] Reference Figure 8 . Figure 8 The substrate processing system PSC shown can be used for method MT. In the following, the substrate processing system PSC is explained from the perspective of the difference between the substrate processing system PSC and the substrate processing system PSA.

[0089] The substrate processing system PSC further includes a load lock module LLMC. In the substrate processing system PSC, the interface module IFM is arranged between the resist film forming unit RU and the exposure module EM. The load lock module LLMC provides a pre-decompression chamber and is arranged between the exposure module EM and the conveying module TM. The load lock module LLMC is connected to the exposure module EM via a gate and is connected to the conveying module TM.

[0090] Furthermore, the substrate processing system PSC may replace the resist film forming unit RU with the resist film forming unit RUB like the substrate processing system PSB, and may further include a load lock module LLMB.

[0091] Reference Fig. 9 . Fig. 9The substrate processing system PSD shown can be used for the method MT. In the following, the substrate processing system PSD is explained from the perspective of the differences between the substrate processing system PSD and the substrate processing system PSA.

[0092] The substrate processing system PSD does not include the stage TB1, the loading module LM1, the resist film forming unit RU, the interface module IFM, and the exposure module EM. The substrate processing system PSD is configured to be able to apply the process STa and the process STb to the exposed substrate W stored in the cassette container FP. The substrate processing system PSD may also perform one or more of the processes STf, STg, STh, and STi.

[0093] The substrate processing system PSD replaces the load lock module LLM with the load lock modules LLM1 and LLM2. The load lock modules LLM1 and LLM2 each provide a pre-decompression chamber. The load lock modules LLM1 and LLM2 are each configured between the loading module LM2 and the conveying module TM. The load lock modules LLM1 and LLM2 are respectively connected to the conveying module TM via a gate, and are connected to the loading module LM2 via a gate. Between the loading module LM2 and the conveying module TM, the substrate W is conveyed via either of the load lock modules LLM1 and LLM2.

[0094] Although various exemplary embodiments have been described above, the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. Furthermore, elements in different exemplary embodiments may be combined to form other exemplary embodiments.

[0095] For example, in order to obtain the resist pattern RP, the step STa, the step STg, and the step STb may be repeatedly performed.

[0096] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E22].

[0097] [E1] A substrate processing method, comprising:

[0098] (a) a step of wet developing the metal-containing resist on the substrate; and

[0099] (b) a step of dry developing the metal-containing resist,

[0100] The metal-containing resist comprises a first area that has been exposed and a second area that has not been exposed,

[0101] In the above (a), one of the first region and the second region is partially removed in the thickness direction of the one region,

[0102] In the above (b), the remaining portion of the above one area is removed.

[0103] [E2] The substrate processing method according to [E1], wherein:

[0104] The method further includes (c) heating the substrate before the step (a).

[0105] [E3] The substrate processing method according to [E2], wherein:

[0106] The method further comprises (d) heating the substrate between (a) and (b).

[0107] The temperature of the substrate in (d) above is higher than the temperature of the substrate in (c) above.

[0108] [E4] The substrate processing method according to [E1], wherein:

[0109] The method further includes (d) a step of heating the substrate between the steps (a) and (b).

[0110] [E5] The substrate processing method according to [E3] or [E4], wherein:

[0111] In the above (d), the temperature of the above substrate is increased gradually or in stages.

[0112] [E6] A substrate processing method according to any one of [E1] to [E5], wherein:

[0113] The method further includes, after the step (b), performing a curing process on the other of the first region and the second region.

[0114] [E7] The substrate processing method according to [E6], wherein:

[0115] In the above-mentioned curing treatment, the above-mentioned other region is subjected to gas supply treatment, plasma treatment, heating treatment, or irradiation treatment with electron beam, laser or electromagnetic wave.

[0116] [E8] The substrate processing method according to [E7], wherein:

[0117] In the plasma treatment, plasma generated from a process gas containing at least one selected from a fluorine-containing gas, an oxygen-containing gas, and a rare gas is used.

[0118] [E9] A substrate processing method according to any one of [E1] to [E5], wherein:

[0119] After the above (b), a film is formed to cover the surface of the other of the first region and the second region.

[0120] [E10] The substrate processing method according to [E9], wherein:

[0121] The above-mentioned film is a silicon-containing film, a carbon-containing film or a tin oxide film.

[0122] [E11] A substrate processing method according to any one of [E1] to [E10], wherein:

[0123] In the above (b), the gas used for removing the one region includes at least one selected from the group consisting of hydrogen bromide, hydrogen fluoride, hydrogen chloride, boron trichloride, hydrogen iodide and an organic acid.

[0124] [E12] A substrate processing method according to any one of [E1] to [E11], wherein:

[0125] In the above (b), the one region is removed by at least one of a thermal reaction and a plasma treatment.

[0126] [E13] A substrate processing method, comprising:

[0127] (a) a step of performing a first dry development process on the metal-containing resist on the substrate;

[0128] (b) a step of heating the substrate after the step (a); and

[0129] (c) a step of performing a second dry development on the metal-containing resist after the step (b),

[0130] The metal-containing resist comprises a first area that has been exposed and a second area that has not been exposed,

[0131] In the above (a), one of the first region and the second region is partially removed in the thickness direction of the one region,

[0132] In the above (c), the remaining portion of the above one area is removed.

[0133] [E14] The substrate processing method according to [E13], wherein:

[0134] The method further comprises (d) heating the substrate before the step (a).

[0135] The temperature of the substrate in (b) above is higher than the temperature of the substrate in (d) above.

[0136] [E15] A substrate processing system, comprising:

[0137] A wet development module configured to perform wet development on a metal-containing resist on a substrate, the metal-containing resist comprising an exposed first region and an unexposed second region;

[0138] A dry developing module, which is configured to perform dry developing on the metal-containing resist;

[0139] a conveying module configured to convey the substrate to the wet developing module and the dry developing module; and

[0140] Control Department,

[0141] The control unit is configured to control the conveying module, the wet developing module, and the dry developing module to cause the following steps to be performed:

[0142] (a) wet developing the metal-containing resist in the wet developing module to partially remove one of the first region and the second region in the thickness direction of the one region; and

[0143] (b) performing dry development on the metal-containing resist in the dry development module to remove a remaining portion of the one region.

[0144] [E16] A substrate processing system according to [E15], wherein:

[0145] Also includes a first heating module,

[0146] The control unit is configured to further cause the following steps to be performed:

[0147] (c) In the first heating module, a step of heating the substrate before the step (a).

[0148] [E17] A substrate processing system according to [E16], wherein:

[0149] Also includes a second heating module,

[0150] The control unit is configured to further cause the following steps to be performed:

[0151] (d) a step of heating the substrate in the second heating module between the steps (a) and (b),

[0152] The temperature of the substrate in (d) above is higher than the temperature of the substrate in (c) above.

[0153] [E18] A substrate processing system according to [E15], wherein:

[0154] The dry developing module includes a heating mechanism configured to heat the substrate.

[0155] The control unit is configured to further cause the following steps to be performed:

[0156] (c) in the dry developing module, a step of heating the substrate by the heating mechanism before the step (a); and

[0157] (d) in the dry developing module, a step of heating the substrate by the heating mechanism between the steps (a) and (b),

[0158] The temperature of the substrate in (d) above is higher than the temperature of the substrate in (c) above.

[0159] [E19] A substrate processing system according to [E16], wherein:

[0160] The dry developing module includes a heating mechanism configured to heat the substrate.

[0161] The control unit is configured to further cause the following steps to be performed:

[0162] (d) in the dry developing module, a step of heating the substrate by the heating mechanism between the steps (a) and (b),

[0163] The temperature of the substrate in (d) above is higher than the temperature of the substrate in (c) above.

[0164] [E20] A substrate processing system, comprising:

[0165] A first dry developing module configured to perform dry developing on a metal-containing resist of a substrate, the metal-containing resist comprising an exposed first region and an unexposed second region;

[0166] A second dry developing module, which is configured to perform dry developing on the metal-containing resist and has a heating mechanism configured to heat the substrate;

[0167] a conveying module configured to convey the substrate to the first dry developing module and the second dry developing module; and

[0168] Control Department,

[0169] The control unit is configured to control the conveying module, the first dry developing module, and the second dry developing module to cause the following steps to be performed:

[0170] (a) dry developing the metal-containing resist in the first dry developing module or the second dry developing module to partially remove one of the first region and the second region in a thickness direction of the one region;

[0171] (b) after step (a), heating the substrate by using the heating mechanism in the second dry developing module; and

[0172] (c) performing dry development on the metal-containing resist in the second dry development module to remove a remaining portion of the one region.

[0173] [E21] A substrate processing system according to [E20], wherein:

[0174] In the step (a), the metal-containing resist is dry-developed in the second dry-developing module.

[0175] [E22] A substrate processing system according to [E21], wherein:

[0176] The control unit is configured to further cause the following steps to be performed:

[0177] (d) before step (a), heating the substrate in the second dry developing module,

[0178] The temperature of the substrate in (b) above is higher than the temperature of the substrate in (d) above.

[0179] It can be understood from the above description that the various embodiments of the present invention are described in this specification for illustrative purposes, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the scope of the invention.

[0180] Description of Reference Numerals

[0181] PSA...substrate processing system, PM1~PM6...processing modules, EM...exposure module, RU...resist film forming unit, W...substrate, PR...resist film, R1...first region, R2...second region.

Claims

1. A substrate processing method, characterized in that: include: (a) a step of wet developing the metal-containing resist on the substrate; and (b) a step of dry developing the metal-containing resist, The metal-containing resist includes a first area that has been exposed and a second area that has not been exposed, In (a), one of the first region and the second region is partially removed in the thickness direction of the one region, In (b), the remaining portion of the one region is removed.

2. The substrate processing method according to claim 1, characterized in that: The method further comprises the step of (c) heating the substrate before the step (a).

3. The substrate processing method according to claim 2, characterized in that: The method further comprises the step of (d) heating the substrate between (a) and (b). The temperature of the substrate in (d) is higher than the temperature of the substrate in (c).

4. The substrate processing method according to claim 1, characterized in that: The method further includes the step of (d) heating the substrate between the steps (a) and (b).

5. The substrate processing method according to claim 3 or 4, characterized in that: In the (d), the temperature of the substrate is increased gradually or in stages.

6. The substrate processing method according to any one of claims 1 to 4, characterized in that: The method further includes, after the step (b), performing a curing process on the other of the first region and the second region.

7. The substrate processing method according to claim 6, characterized in that: In the curing process, the other region is subjected to a gas supply process, a plasma process, a heating process, or an irradiation process with an electron beam, a laser, or an electromagnetic wave.

8. The substrate processing method according to claim 7, characterized in that: In the plasma treatment, plasma generated from a process gas containing at least one selected from a fluorine-containing gas, an oxygen-containing gas, and a rare gas is used.

9. The substrate processing method according to any one of claims 1 to 4, characterized in that: After (b), a film is formed to cover the surface of the other of the first region and the second region.

10. The substrate processing method according to claim 9, characterized in that: The film is a silicon-containing film, a carbon-containing film, or a tin oxide film.

11. The substrate processing method according to any one of claims 1 to 4, characterized in that: The gas used for removing the one region in (b) contains at least one selected from the group consisting of hydrogen bromide, hydrogen fluoride, hydrogen chloride, boron trichloride, hydrogen iodide and an organic acid.

12. The substrate processing method according to any one of claims 1 to 4, characterized in that: In (b), the one region is removed by at least one of a thermal reaction and a plasma treatment.

13. A substrate processing method, characterized in that: include: (a) a step of performing a first dry development process on the metal-containing resist on the substrate; (b) a step of heating the substrate after step (a); and (c) a step of performing a second dry development on the metal-containing resist after step (b), The metal-containing resist includes a first area that has been exposed and a second area that has not been exposed, In (a), one of the first region and the second region is partially removed in the thickness direction of the one region, In (c), the remaining portion of the one region is removed.

14. The substrate processing method according to claim 13, characterized in that: The method further comprises the step (d) of heating the substrate before the step (a). The temperature of the substrate in (b) is higher than the temperature of the substrate in (d).

15. A substrate processing system, characterized in that: include: A wet development module configured to perform wet development on a metal-containing resist on a substrate, the metal-containing resist comprising an exposed first region and an unexposed second region; a dry developing module configured to perform dry developing on the metal-containing resist; a conveying module configured to convey the substrate to the wet developing module and the dry developing module; and Control Department, The control unit is configured to control the conveying module, the wet developing module, and the dry developing module to cause the following steps to be performed: (a) performing wet development on the metal-containing resist in the wet development module to partially remove one of the first region and the second region in a thickness direction of the one region; and (b) dry developing the metal-containing resist in the dry developing module to remove a remaining portion of the one region.

16. The substrate processing system according to claim 15, characterized in that: Also includes a first heating module, The control unit is configured to further cause the following steps to be performed: (c) In the first heating module, a step of heating the substrate before the step (a).

17. The substrate processing system according to claim 16, characterized in that: Also includes a second heating module, The control unit is configured to further cause the following steps to be performed: (d) in the second heating module, heating the substrate between (a) and (b), The temperature of the substrate in (d) is higher than the temperature of the substrate in (c).

18. The substrate processing system according to claim 15, characterized in that: The dry developing module includes a heating mechanism configured to heat the substrate. The control unit is configured to further cause the following steps to be performed: (c) in the dry developing module, a step of heating the substrate by using the heating mechanism before the step (a); and (d) in the dry developing module, between (a) and (b), heating the substrate by using the heating mechanism, The temperature of the substrate in (d) is higher than the temperature of the substrate in (c).

19. The substrate processing system according to claim 16, characterized in that: The dry developing module includes a heating mechanism configured to heat the substrate. The control unit is configured to further cause the following steps to be performed: (d) in the dry developing module, between (a) and (b), heating the substrate by using the heating mechanism, The temperature of the substrate in (d) is higher than the temperature of the substrate in (c).

20. A substrate processing system, characterized in that: include: A first dry developing module configured to perform dry developing on a metal-containing resist of a substrate, the metal-containing resist comprising an exposed first region and an unexposed second region; A second dry developing module, configured to perform dry developing on the metal-containing resist, and having a heating mechanism configured to heat the substrate; a conveying module configured to convey the substrate to the first dry developing module and the second dry developing module; and Control Department, The control unit is configured to control the conveying module, the first dry developing module, and the second dry developing module to cause the following process to be performed: (a) dry developing the metal-containing resist in the first dry developing module or the second dry developing module to partially remove one of the first region and the second region in a thickness direction of the one region; (b) after step (a), heating the substrate by using the heating mechanism in the second dry developing module; and (c) dry developing the metal-containing resist in the second dry developing module to remove a remaining portion of the one region.

21. The substrate processing system according to claim 20, characterized in that: The (a) dry-develops the metal-containing resist in the second dry-developing module.

22. The substrate processing system according to claim 21, characterized in that: The control unit is configured to further cause the following steps to be performed: (d) before step (a), heating the substrate in the second dry developing module, The temperature of the substrate in (b) is higher than the temperature of the substrate in (d).

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