Substrate processing apparatus and exhaust gas processing method using same

Abstract

A substrate processing apparatus according to one embodiment of the present invention comprises: a process chamber forming a processing space for processing a substrate; a substrate support part which is formed at the lower part of the processing space, has a plurality of substrates placed thereon, and is rotatable; a showerhead provided on an upper side of the process chamber so as to face the substrate supporting portion and forming a first gas spraying portion for supplying a first process gas to the substrate supporting portion and a second gas spraying portion for supplying a second process gas to the substrate supporting portion; a first exhaust unit which has a first exhaust line adjacent to the first gas injection unit, and which exhausts the first process gas supplied to the processing space to the outside of the processing space; and a second exhaust part having a second exhaust line adjacent to the second gas injection part and discharging the second process gas supplied to the processing space to the outside of the processing space.

Description

Technical Field

[0001] The present invention relates to a device and method for processing a substrate, and more particularly to a substrate processing device and an exhaust gas processing method using the same. Background Art

[0002] Recently, due to the high integration of semiconductor devices, the demand for very thin films is increasing, and as the size of contact holes decreases, a thin film deposition method with excellent step coverage is required. Atomic layer deposition (ALD) process is applied as a deposition method that can overcome this problem. In particular, if the atomic layer deposition (ALD) process is adopted, the thickness control of the film can achieve control of the atomic or molecular layer unit.

[0003] The atomic layer deposition (ALD) process generally uses two methods: space division method and time division method. The space division method of the atomic layer deposition process is a method in which multiple substrates rotate during the continuous injection of process gas, and the time division method of the atomic layer deposition process is a method in which the process gas is injected onto the substrate with a time difference.

[0004] In the space division atomic layer deposition process, source gas exhaust lines and reaction gas exhaust lines are independently formed, and an exhaust portion is formed to prevent the gases from contacting each other at the lower exhaust end and reacting with each other.

[0005] At this time, a plasma pretreatment device and a collector for collecting powder are arranged in the source gas exhaust line. Due to the reduced efficiency of the plasma pretreatment device, the source gas that cannot be converted into powder accumulates and ignites. Specifically, the powder that has not completely reacted contacts with moisture in the air at the exhaust end to react, thereby generating flammable gas, which causes the flammable gas to ignite.

[0006] In addition, due to the accumulation of powder in the source gas exhaust line, due to vibration and other reasons, a large amount of powder will fall onto the booster pump at one time, causing the pump to trip. Therefore, when the source gas is discharged to the reaction gas exhaust line that is not equipped with a plasma pretreatment device, it may cause environmental and safety problems. Summary of the invention

[0007] Technical issues to be solved

[0008] The present invention is used to solve various problems such as the above problems, and its purpose is to provide a substrate processing device and an exhaust gas treatment method using the same, wherein each exhaust line formed according to the area where the process gas is supplied has a plasma pretreatment part, and the plasma pretreatment part is controlled according to the flow of the source gas to improve the environmental safety problem caused by the source gas being released into the atmosphere. However, this problem is not exemplary, and the scope of the present invention is therefore limited.

[0009] Means of solving the problem

[0010] A substrate processing device according to an embodiment of the present invention for solving the above-mentioned problem comprises: a process chamber forming a processing space for processing a substrate; a substrate support portion formed at the lower part of the processing space, on which a plurality of substrates are placed and rotatable; a shower head arranged at the upper side of the process chamber opposite to the substrate support portion and forming a first gas injection portion for supplying a first process gas to the substrate support portion and a second gas injection portion for supplying a second process gas to the substrate support portion; a first exhaust portion having a first exhaust line adjacent to the first gas injection portion and exhausting the first process gas supplied to the processing space to the outside of the processing space; and a second exhaust portion having a second exhaust line adjacent to the second gas injection portion and exhausting the second process gas supplied to the processing space to the outside of the processing space, wherein the first exhaust portion comprises a first plasma pretreatment portion for forming a plasma atmosphere in a part of the first exhaust line and converting the exhaust gas discharged to the first exhaust line into a powder form; and the second exhaust portion comprises a second plasma pretreatment portion for forming a plasma atmosphere in a part of the second exhaust line and converting the exhaust gas discharged into the second exhaust line into a powder form.

[0011] According to some embodiments of the present invention, the first exhaust section includes: a first collector formed at the rear end of the first plasma pretreatment section, capturing powder formed in the first plasma pretreatment section; a second collector formed at the rear end of the first collector, capturing residual powder that the first collector failed to capture; and a first pump, which sucks exhaust gas from the processing space inside the processing space and discharges it to the outside of the processing space through the first exhaust line.

[0012] According to some embodiments of the present invention, the second exhaust section includes: a third collector formed at the rear end of the second plasma pretreatment section, capturing powder formed in the second plasma pretreatment section; and a second pump, which sucks the exhaust gas of the processing space inside the processing space through the second exhaust line and discharges it to the outside of the processing space.

[0013] According to some embodiments of the present invention, the method includes: a gas sensor located in the second exhaust line, sensing that the first process gas injected by the first gas injection part flows into the second exhaust line.

[0014] According to some embodiments of the present invention, the method includes: a control unit configured to control the operation of the second plasma pre-treatment unit according to whether the gas sensor senses the first process gas.

[0015] According to some embodiments of the present invention, the control unit controls as follows: when the gas sensor does not sense the first process gas, the second plasma pretreatment unit is not operated; when the gas sensor senses the first process gas, the second plasma pretreatment unit is operated to convert the first process gas discharged into the second exhaust line into a powder form.

[0016] An exhaust gas treatment method according to an embodiment of the present invention for solving the above-mentioned problem is an exhaust gas treatment method using a substrate processing device, the substrate processing device comprising: a process chamber, forming a processing space for processing a substrate; a substrate support portion, formed at the lower part of the processing space, on which a plurality of substrates are placed and rotatable; a shower head, arranged at the upper side of the process chamber opposite to the substrate support portion and forming a first gas injection portion for supplying a first process gas to the substrate support portion and a second gas injection portion for supplying a second process gas to the substrate support portion; a first exhaust portion, in order to exhaust the first process gas supplied to the processing space to the outside of the processing space, having a first plasma pre-treatment portion, so that a first exhaust line adjacent to the first gas injection portion A plasma atmosphere is formed in a part of the area in the first exhaust line to convert the exhaust gas discharged into the first exhaust line into a powder form; and a second exhaust section, in order to discharge the second process gas supplied to the processing space to the outside of the processing space, has a second plasma pretreatment section, so that a plasma atmosphere is formed in a part of the area in the second exhaust line adjacent to the second gas injection section to convert the exhaust gas discharged into the second exhaust line into a powder form, the exhaust gas treatment method comprises the following steps: (a) discharging the first process gas through the first exhaust section; (b) discharging the second process gas through the second exhaust section; the (a) step may include: (a-1) operating the first plasma pretreatment section to convert the exhaust gas discharged into the first exhaust line into a powder form.

[0017] According to some embodiments of the present invention, the step (a) may include the following steps: (a-2) using a first collector formed at the rear end of the first plasma pretreatment section to capture powder formed by the first plasma pretreatment section; (a-3) using a second collector formed at the rear end of the first collector to capture residual powder that cannot be captured by the first collector; and (a-4) using a first pump to suck exhaust gas inside the processing space and discharge it to the outside of the processing space.

[0018] According to some embodiments of the present invention, before step (b), the following step may be further included: (c) sensing, by a gas sensor located in the second exhaust line, whether the first process gas injected by the first gas injection part flows into the second exhaust line.

[0019] According to some embodiments of the present invention, the step (b) may include the following steps: (b-1) when the gas sensor does not sense the first process gas, the second plasma pretreatment part is not operated; when the gas sensor senses the first process gas, the second plasma pretreatment part is operated.

[0020] According to some embodiments of the present invention, the step (b) may include the following steps: (b-2) using a third collector formed at the rear end of the second plasma pretreatment section to capture powder formed by the second plasma pretreatment section; and (b-3) using a second pump to suck the exhaust gas inside the processing space and discharge it to the outside of the processing space.

[0021] Effects of the Invention

[0022] According to the substrate processing device and the waste gas treatment method using the same implemented by an embodiment of the present invention constructed as above, when the source gas is discharged to at least one of the multiple exhaust lines, each exhaust line has a plasma pre-treatment device capable of treating the source gas, and when the source gas is discharged to one of the multiple exhaust lines, it is possible to prevent the fire generated after the pump, and when the source gas is sensed, the plasma pre-treatment device is operated to control unnecessary power usage, thereby reducing energy usage. However, the scope of the present invention is not limited to this effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

[0024] Figure 2 1 is a plan view showing a shower head, a first exhaust unit, and a second exhaust unit of a substrate processing apparatus according to an embodiment of the present invention.

[0025] Figures 3 to 6 FIG. 1 is a sequence diagram showing an exhaust gas treatment method using a substrate processing method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0026] Several preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0027] The embodiments of the present invention are intended to more completely explain the embodiments of the present invention to those of ordinary skill in the technical field of the present invention, and the following embodiments may be changed into a variety of different forms, and the scope of the present invention is not limited thereto. On the contrary, these embodiments are provided to make the present invention more substantial and complete, and to fully convey the ideas of the present invention to those of ordinary skill in the technical field of the present invention. In addition, for the convenience and accuracy of the description, the thickness or size of each layer in the drawings is exaggerated.

[0028] In the following, a substrate processing device according to an embodiment of the present invention may be applied to a thin film deposition device for forming thin films on a plurality of substrates S. For example, the substrate processing device may be applied to a thin film deposition device using atomic layer deposition (ALD). In some embodiments, the substrate processing device may be applied to a thin film deposition device requiring a high temperature process.

[0029] Figure 1 is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention. Figure 2 1 is a plan view showing a shower head, a first exhaust unit, and a second exhaust unit of a substrate processing apparatus according to an embodiment of the present invention.

[0030] First, a substrate processing apparatus according to an embodiment of the present invention may generally include a process chamber 100 , a substrate supporting portion 200 , a shower head 300 , a first exhaust portion 400 , and a second exhaust portion 500 .

[0031] like Figure 1 As shown, a processing space A for forming a composite film on a plurality of substrates S may be formed on the process chamber 100. For example, the process chamber 100 is kept airtight and connected to a vacuum pump through at least one exhaust portion, so as to exhaust process gas to the processing space A and adjust the vacuum degree. A valve for controlling the vacuum degree in the process chamber 100 is formed in at least a portion of the exhaust portion, and the valve may be formed in a form such as a throttle valve to control the amount of air passing through the throttle body, thereby controlling the vacuum degree.

[0032] The exhaust part may include a first exhaust part 400 and a second exhaust part 500, which will be described in detail later.

[0033] The process chamber 100 may have various shapes, for example, it may include a process chamber body with an upper opening and a top lead covering the upper part of the process chamber body. A channel, i.e., a door (not shown in the drawings), may be formed on the side of the process chamber body for loading or unloading a plurality of substrates S into the processing space A.

[0034] like Figure 1 As shown, the substrate support part 200 is rotatably formed at the lower part of the processing space A of the process chamber 100, and a plurality of substrates S are radially arranged on the substrate support part 200 along the rotation direction. For example, the substrate support part 200 is rotatably arranged on the process chamber body with a rotation axis consistent with the central axis of the process chamber 100 as a reference.

[0035] For example, the substrate support part 200 may include a shaft sealably coupled from the outside to the inside of the process chamber 100 and rotated by a rotational force, and an upper plate part coupled to the shaft part. A plurality of substrate placement parts capable of placing a plurality of substrates S are radially arranged on the upper plate part. When the plurality of substrates S are a plurality of wafers, the plurality of substrate placement parts may be circular.

[0036] The substrate supporting portion 200 is disposed in the process chamber 100 so as to be liftable and / or rotatable.

[0037] like Figure 1 As shown, the shower head 300 is disposed at an upper side of the process chamber 100 opposite to the substrate support part 200. For example, the shower head 300 may spray a process gas supplied from the outside of the process chamber 100 to the processing space A. More specifically, the shower head 300 sprays the process gas toward a plurality of substrates S disposed on the substrate support part 200 to be disposed at an upper portion of the process chamber 100 opposite to the substrate support part 200.

[0038] In some embodiments, the shower head 300 may include at least one inflow hole formed on an upper layer or a side portion to receive a process gas supplied from the outside and a plurality of injection holes for injecting the process gas onto the plurality of substrates S. For example, the shower head 300 may be formed in a nozzle shape by forming a gas diffusion space inside and including an injection plate having injection holes at the bottom.

[0039] The shower head 300 forms a first gas injection portion 310 for supplying a first process gas onto the substrate support portion 200 and a second gas injection portion 320 for supplying a second process gas onto the substrate support portion 200 .

[0040] At this time, the first process gas is a source gas containing a first organic compound, which is supplied to multiple substrates S and at least a portion of which is adsorbed on the multiple substrates S, and the second process gas is a reaction gas that does not contain an organic compound, which is supplied to multiple substrates S that adsorb the source gas to form a deposited film on the multiple substrates S.

[0041] like Figure 1 As shown, a first gas injection unit 310 for injecting a source gas for thin film deposition onto the upper portion of the plurality of substrates S may be formed on the shower head 300. For example, at least a portion of the plurality of gas injection units formed in the shower head 300 is formed by the first gas injection unit 310. That is, at least one substrate located below the first gas injection unit 310 among the plurality of substrates S may receive the source gas.

[0042] The source gas may be a water-resistant substance that generates a flammable gas that may spontaneously ignite when in contact with water, for example, a gas containing zirconium (Zr), hafnium (Hf), or the like.

[0043] In addition, the second gas injection unit 520 for injecting a reaction gas for thin film deposition onto the upper portion of the plurality of substrates S is formed on the shower head 300. For example, at least one of the plurality of gas injection units formed in the shower head 300 is formed by the second gas injection unit 320. That is, at least one substrate located below the second gas injection unit 320 among the plurality of substrates S can receive the reaction gas.

[0044] Although not shown in the drawings, a purge gas injection unit for purging the reaction gas and the source gas on the upper part of the plurality of substrates S may be formed on the shower head 300. For example, the purge gas injection unit is formed between the first gas injection unit 310 and the second gas injection unit 320 in the plurality of gas injection units formed in the shower head 300, and the first gas injection unit 310, the second gas injection unit 320 and the purge gas injection unit are radially spaced apart.

[0045] Although not shown in the drawings, according to some embodiments of the present invention, a gas supply unit 900 for supplying process gas sprayed by the showerhead 300 is formed outside the process chamber 100. The gas supply unit 900 is separately formed to supply source gas, reaction gas, and purge gas.

[0046] like Figure 1 As shown, the first exhaust unit 400 includes a first exhaust line 410 adjacent to the first gas injection unit 310 , and exhausts the first process gas supplied to the processing space A to the outside of the processing space A.

[0047] The first exhaust line 410 being relatively adjacent to the first gas injection portion 310 means that the first exhaust line 410 is relatively adjacent to the first gas injection portion 310 compared to the second gas injection portion 320 .

[0048] For example, Figure 1 and Figure 2 As shown, the first gas injection unit 310 is formed inside the process chamber 100, and the first exhaust unit 400 is formed below the substrate support unit 200. Then, the first process gas injected from the first gas injection unit 310 is exhausted to the outside of the process chamber 100 through the first exhaust unit 400.

[0049] The first exhaust part 400 may include a first exhaust line 410 , a first plasma pre-treatment part 420 , a first trap 430 , a second trap 440 , and a first pump 450 .

[0050] The first exhaust line 410 may be a pipeline connected from the inside of the process chamber 100 to the first pump 450 , and a gas flows inside through a flow path.

[0051] A first throttle valve for controlling a flow rate of gas flowing through the first exhaust line 410 is formed at at least a portion of the first exhaust line 410 .

[0052] The first plasma pre-treatment unit 420 forms a plasma atmosphere in a portion of the first exhaust line 410 to convert the exhaust gas discharged into the first exhaust line 410 into a powder form.

[0053] The first plasma pre-treatment unit 420 converts the first process gas exhausted without reacting into a stable powder form through decomposition and replacement.

[0054] Specifically, only a portion of the source gas supplied from the processing space A in the process chamber 100 reacts with the reaction gas to form films on the plurality of substrates S, and the remaining source gas is exhausted into the first exhaust line 410. At this time, if the source gas exhausted into the first exhaust line 410 is exhausted into the atmosphere, it may cause environmental safety problems, so it is converted into a stable powder form by the first plasma pre-treatment part 420.

[0055] The first collector 430 is formed at the rear end of the first plasma pretreatment unit 420 and can collect powders formed from the first plasma pretreatment unit 420 . The second collector 440 is formed at the rear end of the first collector 430 and collects residual powders that cannot be collected by the first collector 430 .

[0056] The first pump 450 sucks exhaust gas in the processing space A inside the processing space A through the first exhaust line 410 and discharges the exhaust gas to the outside of the processing space A.

[0057] The first pump 450 is located at the lower portion of the process chamber 100 to form a vacuum in the process chamber 100 and can serve as a channel for exhausting process gases used in the process.

[0058] That is, the first throttle valve is sequentially formed inside the process chamber 100 and connected to the outside of the process chamber 100 through the first exhaust line 410 and controls the exhaust gas flow rate based on the process chamber 100, a first plasma pretreatment part 420 is formed to decompose the first process gas, a first collector 430 for capturing powder and a second collector 440 for capturing residual powder are formed, and a first pump 450 is formed to suck the gas inside the processing space A through the first exhaust line 410.

[0059] The second exhaust unit 500 includes a second exhaust line 510 adjacent to the second gas injection unit 320 , and exhausts the second process gas supplied to the processing space A to the outside of the processing space A.

[0060] The second exhaust line 510 being relatively adjacent to the second gas injection portion 320 means that the second exhaust line 510 is relatively adjacent to the second gas injection portion 320 compared to the first gas injection portion 310 .

[0061] For example, Figure 1 and Figure 2 As shown, the second gas injection unit 320 is formed inside the process chamber 100 and the second exhaust unit 500 is formed below the substrate support unit 200. Then, the reaction gas injected from the second gas injection unit 320 is exhausted to the outside of the process chamber 100 through the second exhaust unit 500.

[0062] The second exhaust part 500 may include a second exhaust line 510 , a second plasma pre-treatment part 520 , a third trap 530 , and a second pump 550 .

[0063] The second exhaust line 510 may be a pipeline connected from the inside of the process chamber 100 to the second pump 550 , and a gas flows inside through a flow path.

[0064] A second throttle valve for controlling the flow rate of gas flowing through the second exhaust line 510 is formed at at least a portion of the second exhaust line 510 .

[0065] The opening and closing angle of the second throttle valve is different based on the opening and closing angle of the first throttle valve. Specifically, when the control unit 700 adjusts the rotation angle of the first throttle valve, the opening and closing rate of the second throttle valve can be adjusted according to a preset correction ratio.

[0066] For example, when the ratio of the angle of the first throttle valve to the opening and closing angle of the second throttle valve is set to 1:0.5, if the opening angle of the first throttle valve is 40 degrees, the opening angle of the second throttle valve is 20 degrees. As an example, when powder is accumulated on the first throttle valve or the lower pipeline, in order to maintain the vacuum pressure of the processing space A inside the process chamber 100, the first throttle valve is opened more, and according to the preset opening and closing angle ratio, the second throttle valve is also opened more proportionally.

[0067] Accordingly, the flow rate of the exhausted gas is controlled according to the opening and closing angles of the first throttle valve and the second throttle valve, so that the balance of the processing space A is maintained.

[0068] The second plasma pre-treatment unit 520 forms a plasma atmosphere in a portion of the second exhaust line 510 to convert the exhaust gas exhausted from the second exhaust line 510 into a powder form.

[0069] The second plasma pre-treatment unit 520 decomposes and replaces the exhaust gas discharged without reacting, and converts it into a stable powder form.

[0070] Specifically, only a portion of the source gas supplied from the processing space A in the process chamber 100 reacts with the reaction gas to form films on the plurality of substrates S, and the remaining source gas is exhausted into the first exhaust line 410 .

[0071] At this time, when the powder accumulated in the first exhaust line 410 reaches a certain level, even if the first throttle valve is opened to the maximum, it cannot handle the flow rate of the exhausted source gas. The second throttle valve of the second exhaust line 510 is opened more than before according to the correction ratio, and the source gas may penetrate into the second exhaust line 510.

[0072] The second plasma pre-treatment part 520 allows the source gas permeated into the second exhaust line 510 to form a stable powder form.

[0073] The third collector 530 is formed at the rear end of the second plasma pre-treatment part 520 to collect powder formed by the second plasma pre-treatment part 520 .

[0074] The second pump 550 sucks exhaust gas in the processing space A through the second exhaust line 510 and discharges the exhaust gas to the outside of the processing space A.

[0075] The second pump 550 is located at the lower portion of the process chamber 100 to form a vacuum in the process chamber 100 and can serve as a channel for exhausting process gases used in the process.

[0076] That is, the second throttle valve connected to the outside of the process chamber 100 through the second exhaust line 510 and controlling the exhaust gas flow rate based on the process chamber 100 is sequentially formed, a second plasma pretreatment part 520 for decomposing the infiltrated source gas is formed, a third collector 530 for capturing powder is formed, and a second pump 550 for sucking the gas inside the processing space A through the second exhaust line 510 is formed.

[0077] The substrate processing apparatus according to some embodiments of the present invention may include a gas sensor 600 and a control unit 700 .

[0078] like Figure 1 As shown, the gas sensor 600 is located at the second exhaust line 510 to sense that the first process gas injected by the first gas injection part 310 flows into the second exhaust line 510 .

[0079] As described above, when a certain degree of powder is accumulated in the first exhaust line 410, the source gas will penetrate into the second exhaust line 510. At this time, the gas sensor 600 is a sensor that senses whether the source gas penetrates into the second exhaust line 510.

[0080] The gas sensor 600 may be a photoionization detector (PID Sensor) for sensing organic compounds constituting source gas and reaction gas. The principle of the photoionization detector is as follows: when gas enters, the gas is ionized by releasing 10.6eV of energy through an extreme ultraviolet lamp (UVLamp), and the ionized ions are gathered on the electrode to sense a detection current proportional to the concentration of volatile organic compounds (VOC).

[0081] The control unit 700 may control the opening and closing angles and opening and closing rates of the first throttle valve formed in the first exhaust line 410 and the second throttle valve formed in the second exhaust line 510 .

[0082] In addition, if Figure 1 As shown, the control part 700 may control the operations of the first plasma pre-treatment part 420 and the second plasma pre-treatment part 520 .

[0083] Specifically, the control part 700 controls the operation of the first plasma pre-treatment part 420 to convert the first process gas discharged into the first exhaust line 410 into powder. In addition, the control part 700 controls the operation of the second plasma pre-treatment part 520 according to whether the gas sensor 600 senses the first process gas.

[0084] For example, when the gas sensor 600 does not sense the first process gas, the control part 700 may not operate the second plasma pre-treatment part 520 .

[0085] More specifically, the control unit 700 controls as follows: when the second process gas flows to the second exhaust line 510 and the first process gas does not flow, the gas sensor 600 does not sense the first process gas. At this time, the second plasma pretreatment unit 520 is not operated, and only the second process gas flows to the second exhaust line 510.

[0086] On the contrary, the control unit 700 controls as follows: when the second process gas and the first process gas both flow to the second exhaust line 510, the gas sensor 600 can sense the first process gas, and at this time the second plasma pretreatment unit 520 is operated to convert the first process gas discharged into the second exhaust line 510 into a powder form.

[0087] Therefore, even if a certain amount of powder is accumulated on the first exhaust line 410 and the first process gas penetrates into the second exhaust line 510, it can be converted into powder by the second plasma pretreatment part 520, thereby preventing the first process gas from being discharged into the atmosphere through the second exhaust line 510.

[0088] In addition, the second plasma pre-treatment unit 520 is operated only when necessary, thereby preventing unnecessary costs and energy waste caused by the second plasma pre-treatment unit 520.

[0089] Figures 3 to 6 FIG. 1 is a sequence diagram showing an exhaust gas treatment method using a substrate processing method according to an embodiment of the present invention.

[0090] The substrate processing method of one embodiment of the present invention is an exhaust gas processing method using a substrate processing device, wherein the substrate processing device comprises: a process chamber 100, forming a processing space A for processing a substrate; a substrate support portion 200, formed at the lower part of the processing space A, on which a plurality of substrates S are placed and rotatable; a nozzle 300, arranged at the upper side of the process chamber 100 opposite to the substrate support portion 200, forming a first gas injection portion 310 for supplying a first process gas to the substrate support portion 200 and a second gas injection portion 320 for supplying a second process gas to the substrate support portion 200; a first exhaust portion 400, in order to supply the first process gas to the substrate support portion 200; The first process gas of space A is discharged to the outside of the processing space A, and the first plasma pretreatment part 420 is provided, so that a plasma atmosphere is formed in a part of the first exhaust line 410 adjacent to the first gas injection part 310, and the exhaust gas discharged into the first exhaust line 410 is converted into a powder form; and the second exhaust part 500, in order to discharge the second process gas supplied to the processing space A to the outside of the processing space A, the second plasma pretreatment part 520 is provided, so that a plasma atmosphere is formed in a part of the second exhaust line 510 adjacent to the second gas injection part 320, and the exhaust gas discharged into the second exhaust line 510 is converted into a powder form.

[0091] Specifically, if Figure 1 As shown, the exhaust gas treatment method includes the following steps: (a) discharging the first process gas through the first exhaust part 400; (b) discharging the second process gas through the second exhaust part 500.

[0092] In the step (a), a plurality of substrates S are placed on the substrate support 200, and the first process gas and the second process gas sprayed from the shower head 300 are supplied to the plurality of substrates S. At this time, a portion of the supplied first process gas reacts with the second process gas to form films on the plurality of substrates S, and the remaining first process gas is exhausted into the first exhaust line 410.

[0093] Specifically, the (a) step may include: (a-1) operating the first plasma pretreatment section 420; (a-2) collecting powder using the first collector 430; (a-3) collecting residual powder using the second collector 440; and (a-4) discharging exhaust gas using the first pump 450.

[0094] like Figure 3 and Figure 4 As shown, the step (a-1) is a step of operating the first plasma pre-treatment part 420 to convert the exhaust gas discharged into the first exhaust line 410 into a powder form.

[0095] As described above, in step (a), only a portion of the first process gas supplied from the processing space A in the process chamber 100 reacts with the second process gas to form films on the plurality of substrates S, and the remaining first process gas is exhausted into the first exhaust line 410 .

[0096] Accordingly, in the step (a-1), if the first process gas discharged into the first exhaust line 410 is discharged into the atmosphere, it may cause environmental safety problems. Therefore, the first process gas is converted into a stable powder form through the first plasma pretreatment unit 420.

[0097] The first process gas includes a source gas adsorbed onto the plurality of substrates S, and the second process gas includes a reaction gas to form a deposited film on the plurality of substrates S adsorbing the first process gas.

[0098] The step (a-2) is a step of using the first collector 430 formed at the rear end of the first plasma pretreatment section 420 to capture the powder formed by the first plasma pretreatment section 420, and the step (a-3) is a step of using the second collector 440 formed at the rear end of the first collector 430 to capture the residual powder that the first collector 430 cannot capture.

[0099] The step (a-4) is a step of sucking the exhaust gas inside the processing space A by using the first pump 450 and discharging it to the outside of the processing space A.

[0100] In the step (a-4), the first pump 450 is provided at the lower portion of the process chamber 100 to form a vacuum in the process chamber 100 or to exhaust a process gas used in the process.

[0101] The waste gas treatment method of some embodiments of the present invention is as follows Figure 5 As shown, before the step (b), the following step may be further included: (c) sensing the first process gas flowing into the second exhaust line 510 .

[0102] Specifically, the step (c) is a step of sensing whether the first process gas injected by the first gas injection unit 310 flows into the second exhaust line 510 by the gas sensor 600 located in the second exhaust line 510. For example, when a certain amount of powder is accumulated in the first exhaust line 410, the first process gas will penetrate into the second exhaust line 510. At this time, in the step (c), the gas sensor 600 is used to sense whether the first process gas penetrates into the second exhaust line 510.

[0103] For example, step (c) may be performed during step (a), that is, during step (a), i.e., during step (a), i.e., the step of exhausting the first process gas through the first exhaust unit 400 , step (c), i.e., the step of sensing whether the first process gas flows into the second exhaust line 510 , may be performed.

[0104] During the execution of step (a), step (c) is continuously executed to continuously sense whether the first process gas flows into the second exhaust line 510, or, during the execution of step (a), step (c) is repeatedly executed to sense whether the first process gas flows into the second exhaust line 510 at predetermined time intervals.

[0105] In addition, the step (c) may be continuously performed during the step (b). Therefore, in the step (c), when the first process gas is not sensed in the second exhaust line 510, the operation of the second plasma pre-treatment unit 520 may be stopped.

[0106] The step (b) is a step of exhausting the second process gas through the second exhaust unit 500 .

[0107] In the step (b), a plurality of substrates S are placed on the substrate support 200, and the first process gas and the second process gas sprayed from the shower head 300 are supplied to the plurality of substrates S. At this time, a portion of the supplied second process gas reacts with the first process gas to form films on the plurality of substrates S, and the remaining second process gas is exhausted into the second exhaust line 510.

[0108] For example, step (b) is a step of exhausting the second process gas through the second exhaust unit 500 when processing a plurality of substrates S, and can be performed simultaneously during step (a) or after step (a).

[0109] Specifically, the step (b) may include the following steps: (b-1) operating the second plasma pretreatment section 520; (b-2) collecting powder using the first collector 430; (b-3) collecting residual powder using the second collector 440; and (b-4) discharging exhaust gas using the first pump 450.

[0110] like Figure 6 As shown, in the step (b-1), when the gas sensor 600 does not sense the first process gas, the second plasma pre-treatment unit 520 may not be operated.

[0111] As described above, in step (b), a portion of the second process gas supplied from the processing space A in the process chamber 100 reacts with the first process gas to form films on the plurality of substrates S, and the remaining second process gas is exhausted into the second exhaust line 510 .

[0112] At this time, if the gas exhausted into the second exhaust line 510 does not include the first process gas, the second process gas is exhausted without operating the second plasma pre-treatment unit 520 .

[0113] Alternatively, in the step (b-1), when the gas sensor 600 senses the first process gas, the second plasma pre-treatment part 520 may be operated.

[0114] Specifically, in step (a), although the first process gas is exhausted through the first exhaust unit 400, when a certain amount of powder accumulates on the first exhaust line 410, the flow rate of the exhausted first process gas may not be handled, causing the first process gas of the second exhaust line 510 to penetrate.

[0115] Therefore, in the step (c), the first process gas of the second exhaust line 510 is sensed, and therefore, in the step (b-1), the second plasma pre-treatment part 520 formed in the second exhaust line 510 is operated.

[0116] That is, in the step (b-1), if the first process gas discharged into the second exhaust line 510 is discharged into the atmosphere, it may cause environmental safety problems. Therefore, the first process gas is converted into a stable powder form through the second plasma pretreatment unit 520.

[0117] In the step (b-2), the powder formed in the second plasma pretreatment section 520 is captured by the third collector 530 formed at the rear end of the second plasma pretreatment section 520 .

[0118] In the step (b-3), the exhaust gas in the processing space A is sucked by the second pump 550 and discharged to the outside of the processing space A.

[0119] In the step (b-3), the second pump 550 is provided at the lower portion of the process chamber 100 to form a vacuum in the process chamber 100 or to exhaust the process gas used in the process.

[0120] According to the substrate processing apparatus and the exhaust gas treatment method of the present invention, when the source gas is discharged to the first exhaust line 410 and the second exhaust line 510, each exhaust line has a first plasma pretreatment part 420 and a second plasma pretreatment part 520 capable of treating the source gas, and when the source gas is discharged to the first exhaust line 410, a fire generated after the first pump 450 can be prevented.

[0121] In addition, when source gas is sensed in the second exhaust line 510, the second plasma pre-processing part 520 is operated to process the source gas exhausted to the second pump 550 and prevent fire, and the second plasma pre-processing part 520 is selectively operated to prevent unnecessary power usage.

[0122] The present invention is described with reference to the embodiments shown in the accompanying drawings, but this is only exemplary, and a person skilled in the art of the present invention will understand that various modifications and equivalent other embodiments can be derived therefrom. Therefore, the true technical protection scope of the present invention should be determined according to the technical ideas of the attached claims.

Claims

1. A substrate processing device, characterized in that: include: A process chamber, forming a processing space for processing a substrate; A substrate support part is formed at the lower part of the processing space, on which a plurality of substrates are placed and can rotate; a shower head, arranged on the upper side of the process chamber opposite to the substrate support part and forming a first gas injection part for supplying a first process gas to the substrate support part and a second gas injection part for supplying a second process gas to the substrate support part; a first exhaust portion having a first exhaust line adjacent to the first gas injection portion and exhausting the first process gas supplied to the processing space to the outside of the processing space; and a second exhaust unit having a second exhaust line adjacent to the second gas injection unit and exhausting the second process gas supplied to the processing space to the outside of the processing space; The first exhaust section includes a first plasma pretreatment section that forms a plasma atmosphere in a portion of the first exhaust line and converts the exhaust gas discharged to the first exhaust line into a powder form; The second exhaust section includes a second plasma pre-treatment section that forms a plasma atmosphere in a portion of the second exhaust line to convert the exhaust gas exhausted into the second exhaust line into a powder form.

2. The substrate processing device according to claim 1, characterized in that: The first exhaust section includes: a first collector formed at the rear end of the first plasma pretreatment section to capture powder formed in the first plasma pretreatment section; A second collector is formed at the rear end of the first collector to capture residual powder that the first collector fails to capture; and The first pump sucks exhaust gas in the processing space through the first exhaust line and discharges the exhaust gas to the outside of the processing space.

3. The substrate processing device according to claim 1, characterized in that: The second exhaust section includes: a third collector formed at the rear end of the second plasma pretreatment section to capture powder formed in the second plasma pretreatment section; and The second pump sucks the exhaust gas in the processing space through the second exhaust line and discharges the exhaust gas to the outside of the processing space.

4. The substrate processing device according to claim 1, characterized in that: include: The gas sensor is located in the second exhaust line and senses that the first process gas injected by the first gas injection part flows into the second exhaust line.

5. The substrate processing device according to claim 4, characterized in that: include: The control unit controls the operation of the second plasma pre-treatment unit according to whether the gas sensor senses the first process gas.

6. The substrate processing device according to claim 5, characterized in that: The control unit controls as follows: when the gas sensor does not sense the first process gas, the second plasma pre-processing unit is not operated; When the gas sensor senses the first process gas, the second plasma pre-treatment part is operated to convert the first process gas exhausted into the second exhaust line into a powder form.

7. A method for treating waste gas, as a method for treating waste gas using a substrate processing device, characterized in that: The substrate processing device includes: a process chamber, which forms a processing space for processing a substrate; a substrate support part, which is formed at the lower part of the processing space and has a plurality of substrates placed thereon and can rotate; a nozzle, which is arranged at the upper side of the process chamber opposite to the substrate support part and forms a first gas injection part for supplying a first process gas to the substrate support part and a second gas injection part for supplying a second process gas to the substrate support part; a first exhaust part, which has a first plasma pretreatment part in order to discharge the first process gas supplied to the processing space to the outside of the processing space, so that a part of a first exhaust line adjacent to the first gas injection part forms a plasma atmosphere and the exhaust gas discharged into the first exhaust line is converted into a powder form; and a second exhaust part, which has a second plasma pretreatment part in order to discharge the second process gas supplied to the processing space to the outside of the processing space, so that a part of a second exhaust line adjacent to the second gas injection part forms a plasma atmosphere and the exhaust gas discharged into the second exhaust line is converted into a powder form. The method comprises the following steps: (a) exhausting a first process gas through the first exhaust portion; (b) exhausting the second process gas through the second exhaust portion; The step (a) includes: (a-1) operating the first plasma pretreatment unit to convert the exhaust gas discharged into the first exhaust line into a powder form.

8. The waste gas treatment method according to claim 7, characterized in that: The step (a) comprises the following steps: (a-2) using a first collector formed at the rear end of the first plasma pretreatment section to capture powder formed by the first plasma pretreatment section; (a-3) using a second collector formed at the rear end of the first collector to capture residual powder that has not been captured by the first collector; and (a-4) The exhaust gas inside the processing space is sucked by the first pump and discharged to the outside of the processing space.

9. The waste gas treatment method according to claim 7, characterized in that: Prior to step (b), the following steps are included: (c) sensing, by a gas sensor located in the second exhaust line, whether the first process gas injected by the first gas injection unit flows into the second exhaust line.

10. The waste gas treatment method according to claim 9, characterized in that: The step (b) comprises the following steps: (b-1) When the gas sensor does not sense the first process gas, the second plasma pre-treatment part is not operated, and when the gas sensor senses the first process gas, the second plasma pre-treatment part is operated.

11. The waste gas treatment method according to claim 7, characterized in that: The step (b) comprises the following steps: (b-2) using a third collector formed at the rear end of the second plasma pretreatment section to capture powder formed by the second plasma pretreatment section; and (b-3) The exhaust gas in the processing space is sucked by the second pump and discharged to the outside of the processing space.

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