Magnetoresistive element, memory device, and electronic apparatus

Abstract

A magnetoresistive element according to one embodiment of the present disclosure includes a multilayer structure, a memory layer disposed on the multilayer structure and variable in a magnetization direction, a non-magnetic layer disposed on the memory layer, and a reference layer disposed on the non-magnetic layer and having a fixed magnetization direction. The multilayer structure includes a magnetic layer variable in a magnetization direction and a non-magnetic metal layer disposed on the magnetic layer.

Description

Technical Field

[0001] The present invention relates to a magnetoresistive element, a storage device and an electronic device. Background Art

[0002] Magnetoresistive random access memory (MRAM) uses a magnetoresistive element (magnetoresistive effect element) as a storage element, and maintains the state by the magnetization state of a ferromagnetic material, and therefore has non-volatility in maintaining recorded data even when the power is turned off. The basic structure of a magnetoresistive element is a sandwich structure in which a non-magnetic thin film of an insulator is sandwiched between two magnetic layers composed of a magnetic thin film. This structure is called a magnetic tunnel junction (MTJ).

[0003] In MRAM, the magnetization of one of the two magnetic layers (reference layer) is fixed, and the magnetization of the other magnetic layer (storage layer) is controlled by external factors such as a magnetic field or current. The state in which the magnetization directions of the reference layer and the storage layer are parallel to each other is called a parallel state, and the state in which the magnetization directions are antiparallel to each other is called an antiparallel state. By rewriting this parallel or antiparallel state of the magnetization direction, data ("0" or "1") is stored in a non-volatile manner.

[0004] As a next-generation writing scheme for such an MRAM, for example, current writing by spin-orbit torque (SOT) using spin-orbit interaction has been focused on (for example, see Patent Document 1). Writing using the SOT scheme is a method of passing a current through a lower wiring called a spin injection layer (for example, a SOT injection layer) instead of passing a current through an MTJ body as in a conventional scheme using spin transfer torque, and therefore, there is an advantage that barrier breakdown can be avoided.

[0005] Reference List

[0006] Patent Literature

[0007] Patent Document 1: WO 2019 / 155957 A Summary of the invention

[0008] Technical issues

[0009] However, since the amount of spin polarized current (spin Hall angle serving as its index) generated in the spin injection layer is small, the write threshold current density (ie, write current) is large, resulting in increased power consumption.

[0010] Therefore, the present invention provides a magnetoresistive element, a storage device, and an electronic device capable of reducing power consumption.

[0011] Solution to the problem

[0012] According to an embodiment of the present disclosure, a magnetoresistive element includes: a laminate; a storage layer laminated on the laminate and having a variable magnetization direction; a non-magnetic layer laminated on the storage layer; and a reference layer laminated on the non-magnetic layer and having a fixed magnetization direction, wherein the laminate includes a magnetic layer with a variable magnetization direction, and a non-magnetic metal layer laminated on the magnetic layer.

[0013] According to an embodiment of the present disclosure, a storage device includes: a plurality of magnetoresistive elements, wherein each of the plurality of magnetoresistive elements includes a laminate, a storage layer laminated on the laminate and having a variable magnetization direction, a non-magnetic layer laminated on the storage layer, and a reference layer laminated on the non-magnetic layer and having a fixed magnetization direction, and the laminate includes a magnetic layer with a variable magnetization direction, and a non-magnetic metal layer laminated on the magnetic layer.

[0014] An electronic device according to an embodiment of the present disclosure includes: a storage device, wherein the storage device includes a plurality of magnetoresistive elements, each of the plurality of magnetoresistive elements includes a laminate, a storage layer laminated on the laminate and having a variable magnetization direction, a non-magnetic layer laminated on the storage layer, and a reference layer laminated on the non-magnetic layer and having a fixed magnetization direction, and the laminate includes a magnetic layer with a variable magnetization direction, and a non-magnetic metal layer laminated on the magnetic layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 : is a diagram showing a configuration example of a magnetoresistive element according to an embodiment of the present invention.

[0016] Figure 2 2 are diagrams illustrating various effects of the first laminate according to an embodiment of the present disclosure.

[0017] Figure 3 is a diagram showing writing data “1” into a magnetoresistive element according to an embodiment of the present disclosure.

[0018] Figure 4 is a diagram illustrating writing data “0” into a magnetoresistive element according to an embodiment of the present disclosure.

[0019] Figure 5 is a diagram illustrating reading data “1” or “0” from a magnetoresistive element according to an embodiment of the present disclosure.

[0020] Figure 6 is a diagram showing writing of data “1” to a magnetoresistive element according to the first modification.

[0021] Figure 7 is a diagram showing writing of data “0” into a magnetoresistive element according to the first modification example.

[0022] Figure 8 3 is a diagram showing reading of data “1” or “0” from the magnetoresistive element of Modification 1.

[0023] Fig. 9 is a diagram showing a structural example of a magnetoresistive element according to a second modification.

[0024] Fig.10 is a diagram showing a structural example of a magnetoresistive element according to a third modification.

[0025] Fig.11 is a diagram showing a structural example of a magnetoresistive element according to a fourth modification.

[0026] Fig.12 is a diagram showing a structural example of a magnetoresistive element according to a fifth modification.

[0027] Fig.13 : is a diagram showing a structural example of a magnetoresistive element according to a sixth modification.

[0028] Fig.14 is a diagram showing a structural example of a magnetoresistive element according to a seventh modification.

[0029] Fig.15 : is a diagram showing a structural example of a magnetoresistive element according to an eighth modification.

[0030] Fig.16 : is a diagram showing a structural example of a magnetoresistive element according to a ninth modification.

[0031] Fig.17 2 is a diagram showing a structural example of a magnetoresistive element according to a tenth modification.

[0032] Fig.18 : is a diagram showing a structural example of a magnetoresistive element in an eleventh modification.

[0033] Fig.19 2 is a diagram showing a structural example of a magnetoresistive element according to a twelfth modification.

[0034] Fig. 20 3 is a diagram showing a structural example of a magnetoresistive element in a thirteenth modification.

[0035] Fig.21 14 is a diagram showing a structural example of a magnetoresistive element according to a fourteenth modification.

[0036] Fig. 22 is a diagram illustrating a configuration example of a storage device according to an application example.

[0037] Fig.23 is a diagram illustrating a configuration example of a storage unit provided in a storage device according to an application example.

[0038] Fig.24 : is a diagram illustrating a configuration example of an imaging device according to an application example.

[0039] Fig.25 : is a diagram showing a configuration example of a distance measuring device according to an application example.

[0040] Fig.26 is a diagram showing an example of the appearance of a gaming device according to an application example.

[0041] Fig. 27 is a diagram illustrating a configuration example of a gaming device according to an application example. DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. It should be noted that the elements, devices, devices, etc. according to the present disclosure are not limited to these embodiments. In addition, in the following embodiments, the same parts are substantially represented by the same reference numerals, and their repeated description will be omitted.

[0043] Further, one or more embodiments described below (including examples and modifications) can be implemented independently of each other. At the same time, at least some of the multiple embodiments described below can be appropriately combined with at least some of the other embodiments to be implemented. The multiple embodiments may include novel features that are different from each other. Therefore, multiple embodiments may contribute to achieving different purposes or solving problems, and may show different effects from each other. It should be noted that the effects of the various embodiments are examples only and are not limited, and there may be other effects.

[0044] In addition, the drawings mentioned in the following description are drawings for the purpose of facilitating the description and understanding of the embodiments of the present disclosure, and for the sake of clarity, the shapes, sizes, ratios, etc. shown in the drawings are sometimes different from the actual ones. In addition, taking into account the following description and the known technology, the elements shown in the drawings, etc. may be appropriately modified in design. In addition, in the following description, for example, the vertical direction of the laminated structure of the element, etc. corresponds to the relative direction when the surface of the substrate on which the element is disposed faces upward, and is sometimes different from the vertical direction according to the actual gravitational acceleration.

[0045] The present disclosure will be described according to the following item order.

[0046] 1. Implementation Method

[0047] 1-1. Configuration example of magnetoresistive element

[0048] 1-2. Various effects of the first laminate

[0049] 1-3. Write scheme and read scheme

[0050] 1-4. Modification of magnetoresistive element

[0051] 1-4-1. First Modification

[0052] 1-4-2. Second Modification

[0053] 1-4-3. Third Modification

[0054] 1-4-4. Fourth Modification

[0055] 1-4-5. Fifth Modification

[0056] 1-4-6. Sixth Modification

[0057] 1-4-7. Seventh Modification

[0058] 1-4-8. Eighth Modification

[0059] 1-4-9. Ninth Modification

[0060] 1-4-10. Tenth Modification

[0061] 1-4-11. Eleventh Modification

[0062] 1-4-12. Twelfth Modification

[0063] 1-4-13. Thirteenth Modification

[0064] 1-4-14. Fourteenth Modification

[0065] 1-5. Actions and effects

[0066] 2. Storage device (application example)

[0067] 3. Electronic equipment (application examples)

[0068] 3-1. Imaging device

[0069] 3-2. Distance measuring device

[0070] 3-3. Gaming equipment

[0071] 4. Other Implementation Methods

[0072] 5. Appendix

[0073] <1. Implementation Method>

[0074] <1-1. Configuration example of magnetoresistive element

[0075] See also Figure 1 , a configuration example of the magnetoresistive element 1A according to the present embodiment will be described. Figure 1 1A is a diagram showing a configuration example of a magnetoresistive element 1A according to the present embodiment.

[0076] like Figure 1 As shown, the magnetoresistive element 1A according to the present embodiment includes a first laminate 10, a second laminate 20, and a plurality of terminals T1, T2, and T3. The magnetoresistive element 1A is connected to the controller 50 via the terminals T1, T2, and T3. For example, the terminal T1 is provided on one of the two ends of the lower surface of the first laminate 10, the terminal T2 is provided on the other of the two ends of the lower surface of the first laminate 10, and the terminal T3 is provided on the upper surface of the second laminate 20.

[0077] The controller 50 is a control device that controls the application of a voltage for causing a current to flow through the magnetoresistive element 1A. The controller 50 is implemented by, for example, an integrated circuit such as a field programmable gate array (FPGA) or an application specific integrated circuit (ASIC). It should be noted that the controller 50 can be implemented by, for example, a processor such as a central processing unit (CPU) or a microprocessing unit (MPU) that executes various programs using a random access memory (RAM) or the like as a work area, and is not particularly limited.

[0078] The first laminate 10 includes a plurality of nonmagnetic metal layers 11 and a plurality of magnetic layers 12. The first laminate 10 is formed in, for example, a rectangular parallelepiped shape. Note that the shape of the first laminate 10 is not particularly limited, and the first laminate 10 may be formed in, for example, a cubic shape or a cylindrical shape.

[0079] The non-magnetic metal layer 11 and the magnetic layer 12 are alternately laminated. Therefore, there is a non-magnetic metal layer 11 as an upper layer (upper part), a non-magnetic metal layer 11 as an intermediate layer (middle part), and a non-magnetic metal layer 11 as a lower layer (lower part), and the magnetic layer 12 exists between the layers. Each of the non-magnetic metal layers 11 as the upper layer and the intermediate layer includes a first spin injection layer 11a and a second spin injection layer 11b. It should be noted that in the non-magnetic metal layer 11, the first spin injection layer 11a is located on the upper layer side, that is, on the storage layer 21 side of the second spin injection layer 11b. The lower non-magnetic metal layer 11 includes only the first spin injection layer 11a.

[0080] The first spin injection layer 11a is an injection layer (e.g., a SOT injection layer) having a spin Hall angle of a first sign (e.g., plus). For example, the first spin injection layer 11a may be made of heavy metals such as Pt and Ru. In addition, the second spin injection layer 11b is an injection layer (e.g., a SOT injection layer) having a spin Hall angle of a second sign (e.g., negative) different from the first sign. For example, the second spin injection layer 11b may be made of heavy metals such as Ta, W, and Ir. When the first sign is positive, the second sign is negative, and when the first sign is negative, the second sign is positive.

[0081] Here, the spin Hall angle θSH By θ SH =Js / Jc is defined by the relational expression. Js is the spin current density and Jc is the current density. The sign of the spin Hall angle (e.g., plus or minus) depends on the material. For example, the upward direction of the spin (e.g., spin-polarized electrons) is set to positive and the downward direction of the spin is set to negative. The settings can be reversed.

[0082] This first laminate 10 is used as a spin injection layer and a secondary storage layer. Specifically, each of the first spin injection layer 11a and the second spin injection layer 11b in the first laminate 10 is used as a spin injection layer for injecting spin into the storage layer 21 and each magnetic layer 12. In addition, each magnetic layer 12 in the first laminate 10 is used as a second storage layer for data storage of the auxiliary storage layer 21 (i.e., the main storage layer) by changing its own magnetization direction. In addition, the spin conversion efficiency can be improved by providing the magnetic layer 12 in the first laminate 10, and the spin conversion efficiency can be further improved by mixing the magnetic layer 12 with the spin injection layers 11a and 11b made of heavy metals.

[0083] It is to be noted that, for example, the first laminate 10 is formed so that antiferromagnetic coupling occurs between the respective magnetic layers 12. That is, the respective magnetic layers 12 are antiferromagnetically coupled to each other and are coupled with opposite polarities due to the antiferromagnetic coupling. By using the antiferromagnetic coupling between the magnetic layers 12, the write current can be reduced from the relationship of the torque direction. Antiferromagnetic coupling refers to, for example, indirect coupling between ferromagnetic layers, in which adjacent ferromagnetic layers or a plurality of ferromagnetic layers have magnetizations facing in opposite directions to each other.

[0084] The second laminate 20 includes a storage layer 21, a nonmagnetic layer 22, and a reference layer 23. For example, the second laminate 20 is formed in a rectangular parallelepiped shape smaller than the first laminate 10, and is disposed at the center of the upper surface of the first laminate 10. It is to be noted that the shape and arrangement of the second laminate 20 are not particularly limited, and for example, the second laminate 20 may be formed in a cubic shape or a cylindrical shape smaller than that of the first laminate 10, or may be disposed at a position other than the center of the upper surface of the first laminate 10 by being offset from the center of the first laminate 10.

[0085] The storage layer 21 is a layer having magnetic anisotropy and a changeable magnetization direction. The state in which the magnetization direction of the storage layer 21 is the same as that of the reference layer 23 and the state in which the magnetization direction of the storage layer 21 is different from that of the reference layer 23 are respectively referred to as a parallel state and an antiparallel state. The magnetoresistive element 1A is in a low resistance state in the parallel state and in a high resistance state in the antiparallel state. Note that the magnetization direction of the storage layer 21 can be changed by applying a voltage to the magnetoresistive element 1A.

[0086] In addition, the storage layer 21 can be made of cobalt iron (CoFe), cobalt iron boron (CoFeB), Fe, iron boride (FeB), etc. In addition, a configuration including a transition metal (Hf, Ta, W, Re, Ir, Pt, Au, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Ti, V, Cr, Mn, Ni, or Cu) or the like can also be adopted. In addition, a nitride or an oxide can be included. In addition, iridium (Ir) or osmium (Os) can be used as a material for inducing a magnetic moment close to the magnetic material. It should be noted that heavy metals can also be added to the storage layer 21 to improve the voltage-controlled magnetic anisotropy effect.

[0087] In addition, the storage layer 21 may have a laminated structure in which a plurality of ferromagnetic layers are laminated and a non-magnetic layer is interposed therebetween. At this time, two ferromagnetic layers adjacent to each other via the non-magnetic layer may be exchange coupled. The non-magnetic layer may be made of Mg, Al, Ti, Si, Zn, Zr, Hf, Ta, Bi, Cr, Ga, La, Gd, Sr, Ba, W, Re, Ir, Pt, Au, Nb, Mo, Ru, Rh, Pd, Ag, V, Mn, Ni, Cu, etc.

[0088] The non-magnetic layer 22 is made of an insulator (insulating layer) such as MgO and serves as a tunnel barrier layer. The tunnel barrier layer is sandwiched between the storage layer 21 and the reference layer 23 to form a magnetic tunnel junction (MTJ), and exhibits a tunnel magnetoresistance (TMR) effect according to the relative magnetization angle between the storage layer 21 and the reference layer 23. In addition, the tunnel barrier layer has the function of controlling the magnetization direction by passing a spin-polarized current through the storage layer 21. In addition, by increasing the thickness of the tunnel barrier, that is, by increasing the resistance, an electric field can also be applied to impart a voltage-controlled magnetic anisotropy effect. The tunnel barrier layer can be made of an oxide of at least one element selected from the group consisting of Mg, Al, Ti, Si, Zn, Zr, Hf, Ta, Bi, Cr, Ga, La, Gd, Sr, and Ba, or a nitride of at least one element selected from the group consisting of Mg, Al, Ti, Si, Zn, Zr, Hf, Ta, Bi, Cr, Ga, La, Gd, Sr, and Ba. In addition, it is also possible to use an insulator, a dielectric, and a semiconductor such as MgF2, CaF, SrTiO2, AlLaO3, or AlNO for configuration. It is also possible to have a structure in which these layers are laminated. It should be noted that, for example, the nonmagnetic layer 22 may include a conductor, and a giant magnetoresistance (GMR) element structure is formed here.

[0089] The reference layer 23 is a magnetization-fixed layer having magnetic anisotropy and a fixed (unchanged) magnetization direction. For example, the reference layer 23 may be made of CoFeB, CoFeC alloy, NiFeB alloy, NiFeC alloy, etc. In addition, the reference layer 23 may have a laminated iron core pin structure, in which a plurality of ferromagnetic layers are laminated and a non-magnetic layer is interposed therebetween. As materials constituting the ferromagnetic layer of the reference layer 23 having a laminated ferropin structure, a first layer using Co, CoFe, CoFeB, etc., and a second layer being an artificial alternating laminated film or an alloy composed of at least one element selected from the element group of Co, Fe and Ni and at least one element selected from the element group of Ir, Pt, Pd, Cr, V, lanthanide elements and actinide elements. In addition, as materials constituting the non-magnetic layer of the reference layer 23, Ru, Re, Ir, Os, etc. may be used. As the reference layer 23, a configuration in which a first layer, a non-magnetic layer and a second layer are repeatedly laminated may be used.

[0090] In addition, the reference layer 23 may be configured to fix the magnetization direction by utilizing the antiferromagnetic coupling between the antiferromagnetic layer and the ferromagnetic layer. Examples of the material of the antiferromagnetic layer may include magnetic materials such as FeMn alloy, PtMn alloy, PtCrMn alloy, NiMn alloy, IrMn alloy, NiO and Fe2O3. In addition, non-magnetic elements such as Ag, Cu, Au, Al, Si, Bi, Ta, B, C, O, N, Pd, Pt, Zr, Hf, Ir, W, Mo or Nb may be added to these magnetic materials.

[0091] The terminal T1 and the terminal T2 configure an input terminal pair for providing a write current that changes the magnetization state of the storage layer 21. The terminal T1 and the terminal T2 are provided on a surface of the first laminate 10, wherein the surface is opposite to the storage layer 21, that is, the lower surface of the first laminate 10, and are electrically connected to the first laminate 10. In a plan view parallel to an in-plane direction orthogonal to a vertical direction (lamination direction) of the first laminate 10, the terminal T1 and the terminal T2 are provided at intervals at positions sandwiching the storage layer 21. Figure 1In the example of, the terminal T1 and the terminal T2 are arranged at the two ends of the lower surface of the first laminate 10. The controller 50 is connected to the terminal T1 and the terminal T2 via wiring. Voltages are applied to the terminal T1 and the terminal T2 from the controller 50, respectively. When a certain voltage is applied to the terminal T1 or the terminal T2, that is, when the voltage is applied to one terminal, the write current flows from one terminal to the other terminal in the in-plane direction of the first laminate 10. Therefore, the spin polarized current flows into the storage layer 21, and the magnetization state of the storage layer 21 changes. The torque acting on the storage layer 21 is referred to as the spin-orbit torque here. Note that the direction of the write current flow is different in the case where the voltage is applied to the terminal T1 and the case where the voltage is applied to the terminal T2. Therefore, depending on the direction of the write current, the magnetization direction of the storage layer 21 relative to the reference layer 23 can be a parallel state or an anti-parallel state.

[0092] The terminal T3 configures an output terminal pair using one (or both) of the terminal T1 and the terminal T2, wherein the pair extracts a read current corresponding to the magnetization state of the storage layer 21. The terminal T3 is disposed on a surface of the second laminate 20 opposite to the storage layer 21 (i.e., the upper surface of the second laminate 20), and is electrically connected to the second laminate 20. When determining the magnetization state of the storage layer 21, the output terminal pair applies a voltage between the terminal T1 and the terminal T3, and causes the read current to flow through a path from the lower surface of the first laminate 10 to the upper surface of the second laminate 20. For example, the magnitude of the resistance (e.g., tunnel resistance) between the storage layer 21 and the reference layer 23 is determined according to the applied voltage and the read current, and the magnetization state (parallel state or antiparallel state) of the storage layer 21 is obtained. The resistance between the storage layer 21 and the reference layer 23 changes to a relatively high resistance state and a relatively low resistance state according to the magnetization state of the storage layer 21.

[0093] The above-mentioned various layers can be produced by physical vapor deposition (PVD) methods, ion beam deposition methods, and vacuum vapor deposition methods, such as sputtering methods, and chemical vapor deposition (CVD) methods, such as atomic layer deposition (ALD) methods. In addition, the patterning of these layers can be performed by reactive ion etching (RIE) methods or ion milling methods. It is preferred to continuously form various layers in a vacuum device, and it is preferred to perform patterning thereafter.

[0094] <1-2. Various effects of the first laminate>

[0095] Reference Figure 2 Various effects of the first laminate body 10 according to the present embodiment are described. Figure 21 and 2 are diagrams showing various effects of the first laminate 10 according to the present embodiment. In the following description, spin-polarized electrons (ie, upward spin-polarized electrons) are referred to as spin-up, and downward spin-polarized electrons are referred to as spin-down, as necessary.

[0096] like Figure 2 As shown, a laminated structure body 30 is formed by alternately laminating magnetic materials and non-magnetic materials. The laminated structure body 30 has a giant magnetoresistance (GMR) effect, and further has effects such as a spin Hall effect (SHE) and a Rashba-Edelstein effect (REE). That is, the laminated structure body 30, for example, the first laminate body 10 is configured to have such various effects.

[0097] In the GMR effect, when the current flows in the in-plane direction of the laminated structure 30, naturally, the current also flows through the magnetic material. In response to this, the upward spin and the downward spin move in the magnetic material, and, for example, the upward spin and the downward spin move while being scattered at the interface by the magnetic material adjacent to the moving magnetic material. Specifically, the upward spin moves while being strongly scattered at the interface by the magnetic material whose magnetization points downward, and the downward spin moves while being strongly scattered at the interface by the magnetic material whose magnetization points upward. As a result, a torque corresponding to the upward spin or the downward spin is generated, and the magnetization direction of the magnetic material changes.

[0098] In addition, in the effects of SHE, REE, etc., when the current flows in the in-plane direction of the laminated structure 30, naturally, the current also flows through the non-magnetic material. In response to this, the upward spin and the downward spin move in the non-magnetic material. Here, the force acts on each electron in the direction of the outer product of the conduction direction (the direction opposite to the current) and the spin polarization direction. Therefore, for example, when viewed in the in-plane direction of the laminated structure and from the current direction, the rotation of 90 degrees of clockwise polarization is dispersed and moves upward, and the rotation of 90 degrees of counterclockwise polarization is dispersed and moves downward. In the SHE and REE effects, the spins are respectively referred to as upward spin and downward spin. As a result, one or both of the upward spin and the downward spin are accumulated in the magnetic material.

[0099] Meanwhile, in the comparative example, the magnetic layer 31 is sandwiched by the nonmagnetic metal layers 32 each including one layer. Here, the downward spin enters the magnetic layer 31 from the upper nonmagnetic metal layer 32, and the upward spin enters the magnetic layer 31 from the lower nonmagnetic metal layer 32. Since the downward spin and the upward spin have different spin Hall angle signs, the spins cancel each other in the magnetic layer 31, and the spin-orbit torque (SOT) deteriorates.

[0100] On the other hand, in the example (present embodiment), the magnetic layer 12 is sandwiched between the non-magnetic metal layers 11 each including two layers. As described above, the non-magnetic metal layer 11 includes both the upper first spin injection layer 11a and the lower second spin injection layer 11b. The upper first spin injection layer 11a scatters and moves the upward spin in the upward direction and scatters and moves the downward spin in the downward direction. At the same time, because the sign of the spin Hall angle of the lower second spin injection layer 11b is different from the sign of the spin Hall angle of the first spin injection layer 11a, the lower second spin injection layer 11b scatters and moves the downward spin in the upward direction and scatters and moves the upward spin in the downward direction.

[0101] Specifically, the magnetic layer 12 is sandwiched between the second spin injection layer 11b and the first spin injection layer 11a. Here, the upward spin from the second spin injection layer 11b enters the magnetic layer 12, and the upward spin from the first spin injection layer 11a also enters the magnetic layer 12. Since the upward spins have the same spin Hall angle sign, the spins do not cancel each other in the magnetic layer 12, and the spin-orbit torque can be increased. Note that a spin current carrying spin angular momentum is generated perpendicular to the direction of the current. When the spin current flows into the magnetic material, torque is generated, and the magnetization direction of the magnetic material can be reversed.

[0102] Effects such as anisotropic magnetoresistance (AMR) effect, anomalous Hall effect (AHE) and planar Hall effect (PHE) can contribute to this spin current generation. Here, the first laminate 10 and the second laminate 20 are configured to have this effect. In addition, spin transfer torque (STT) can be combined with spin orbit torque (SOT). Note that the sign of the current (direction of the current) and the direction and magnitude of the spin (upward spin or downward spin) scattering are determined by the sign of the spin Hall angle and can be opposite to the above.

[0103] As described above, by utilizing a magnetic material having a higher spin conversion efficiency than the spin conversion efficiency of the non-magnetic material used for the first laminate 10, the writing efficiency can be improved. In addition, by suppressing the cancellation between the upward spin or the downward spin, the degradation of the spin track torque can be suppressed. In addition, by using the first laminate 10, compared with the case where the spin injection layer is formed to be very thin (for example, a few nm), the thickness of the first laminate 10 is large, and the yield can be ensured or improved. For example, the tolerance to the variation of the groove depth is improved.

[0104] <1-3. Writing and reading schemes>

[0105] Reference Figures 3 to 5 A writing scheme and a reading scheme according to the present embodiment are described. Figure 3is a diagram showing writing of data “1” to the magnetoresistive element 1A according to the present embodiment. Figure 4 is a diagram showing writing of data “0” in the magnetoresistive element 1A according to the present embodiment. Figure 5 is a diagram showing reading of data “1” or data “0” from the magnetoresistive element 1A according to the present embodiment.

[0106] The operation when the magnetoresistive element 1A is used as a memory of 1-bit data (data "1" or "0") will be described. One-bit data "0" and "1" are assigned in advance to the magnetization state, that is, the resistance state of the storage layer 21. For example, "1" is assigned to the high resistance state (antiparallel state) of the storage layer 21 and "0" is assigned to the low resistance state (parallel state) of the storage layer 21.

[0107] like Figure 3 As shown, when writing data "1" to the magnetoresistive element 1A, voltages are applied to the terminal T1 and the terminal T2 of the magnetoresistive element 1A, respectively. For example, when voltages (-V, +V) are applied to the terminal T1 and the terminal T2, respectively, a write current (in-plane current) flowing from the terminal T2 side to the terminal T1 side flows through the first laminate 10. In response to this, for example, a downward spin enters the storage layer 21 from the upper first spin injection layer 11a, a downward spin enters the upper magnetic layer 12 from the upper second spin injection layer 11b and the middle first spin injection layer 11a, and a downward spin enters the lower magnetic layer 12 from the lower second spin injection layer 11b and the lower first spin injection layer 11a. That is, only the downward spin enters the storage layer 21 and each magnetic layer 12, respectively, and a spin-orbit torque (SOT) due to the downward spin acts on the magnetization of the storage layer 21 and each magnetic layer 12. Furthermore, a torque caused by the GMR effect is generated and acts on the magnetization of each magnetic layer 12. By this action, the magnetization of the storage layer 21 becomes an antiparallel state facing in a downward direction opposite to the magnetization direction of the reference layer 23. As a result, the magnetoresistive element 1A becomes a high resistance state, and the data becomes "1".

[0108] like Figure 4As shown, even in writing data "0" into the magnetoresistive element 1A, voltages are applied to the terminal T1 and the terminal T2 of the magnetoresistive element 1A, respectively. For example, when voltages (+V, -V) opposite to the above voltages are applied to the terminal T1 and the terminal T2, respectively, a write current (in-plane current) flowing from the terminal T1 side to the terminal T2 side flows through the first laminate 10. In response to this, for example, an upward spin enters the memory layer 21 from the upper first spin injection layer 11a, an upward spin enters the upper magnetic layer 12 from the upper second spin injection layer 11b and the middle first spin injection layer 11a, and an upward spin enters the lower magnetic layer 12 from the lower second spin injection layer 11b and the lower first spin injection layer 11a. That is, only the upward spin enters the memory layer 21 and each magnetic layer 12, respectively, and a spin-orbit torque (SOT) due to the upward spin acts on the magnetization of the memory layer 21 and each magnetic layer 12. Furthermore, a torque caused by the GMR effect is generated and acts on the magnetization of each magnetic layer 12. By this action, the magnetization of the storage layer 21 becomes a parallel state facing the same upward direction as the magnetization direction of the reference layer 23. As a result, the magnetoresistive element 1A becomes a low resistance state, and the data becomes "0".

[0109] like Figure 5 As shown, when data "1" or "0" is read from the magnetoresistive element 1A, a predetermined voltage is applied between the terminal T1 and the terminal T3. According to the applied voltage and the magnitude of the read current, the resistance state of the current path (path) passing through the first laminate 10 and the second laminate 20 is determined by the controller 50, and one bit of data is specified from the resistance state. It should be noted that the read current only needs to flow in the direction of passing through the magnetic tunnel junction including the storage layer 21, the non-magnetic layer 22 and the reference layer 23, and therefore can flow from the storage layer 21 toward the reference layer 23, and vice versa. More preferably, the direction in which the current flows from the reference layer 23 toward the storage layer 21 is used for reading.

[0110] exist Figure 5 In the example of , because the magnetization direction of the storage layer 21 points upward and is the same as the magnetization direction of the reference layer 23, the storage layer 21 is in a parallel state. The magnetoresistive element 1A in the parallel state is in a low resistance state, in which the resistance of the current path between the storage layer 21 and the reference layer 23 is relatively small. Therefore, the read current becomes relatively large. On the other hand, the magnetoresistive element 1A in the antiparallel state is in a high resistance state in which the resistance of the current path between the storage layer 21 and the reference layer 23 is relatively large. Therefore, the read current becomes relatively small.

[0111] In the above writing, when the same data as the data stored in the magnetoresistive element 1A is written, the magnetoresistive element 1A is not overwritten even if a write current flows therethrough, and when different data from the data stored in the magnetoresistive element 1A is written, the data is overwritten.

[0112] In addition, the relationship between the direction of the write current and the directions of the spin current and the spin-orbit torque is an example, and the directions of the spin current and the spin-orbit torque relative to the direction of the write current are variable depending on the materials used for the first laminate 10, the storage layer 21, the non-magnetic layer 22, etc. and their combinations. Therefore, the direction of the write current relative to the data to be stored is determined based on the materials used for the first laminate 10, the storage layer 21, and the non-magnetic layer 22 and their combinations.

[0113] In addition, although the spin Hall effect is the origin of the spin-orbit torque, the origin of the spin-orbit torque (SOT) also originates from other effects as described above. For example, in the case of the Rashba-Edelstein effect (REE), the Rashba effective magnetic field acts on the electrons flowing through the interface between the first laminate 10 and the storage layer 21 to accumulate polarized spins, and the polarized spins act on the magnetization of the storage layer 21 to cause magnetization reversal. In any effect, because the magnetization direction of the storage layer 21 is maintained even after the write current becomes 0, data is stored in the magnetoresistive element 1A in a non-volatile manner.

[0114] In addition, when data is written in the magnetoresistive element 1A, a write current (e.g., a pulse write current) is caused to flow through the first laminate 10 using the terminal T1 and the terminal T2, but the write current may flow only through the first laminate 10 or may flow through both the first laminate 10 and the storage layer 21. When the magnetization reversal of the storage layer 21 is induced by the spin Hall effect, it is necessary to introduce a current into at least the first laminate 10, and here, the write current is caused to flow through at least the first laminate 10. In addition, when the magnetization reversal is induced by REE, it is necessary to introduce a current into the laminate film interface, and here, the write current is caused to flow through both the first laminate 10 and the storage layer 21. It should be noted that in a configuration in which the storage layer 21 is directly formed on the surface of the first laminate 10, since each of the first laminate 10 and the storage layer 21 is a conductor, when the current flows through the first laminate 10, the current also flows through the storage layer 21, and of course, the current also flows through the interface therebetween.

[0115] <1-4. Deformation of magnetoresistive element>

[0116] See also Figures 6 to 21 , first to fourteenth modified examples of the magnetoresistive elements 1B to 10 of the present embodiment will be described. Figure 6 is a diagram showing writing of data “1” to the magnetoresistive element 1B according to the first modification. Figure 7 is a diagram showing writing of data “0” into the magnetoresistive element 1B according to the first modification example. Figure 8 1 is a diagram showing reading of data “1” or “0” from the magnetoresistive element 1B of Modification 1. Figures 9 to 211 is a diagram showing a structural example of the magnetoresistive element (magnetoresistive elements 1C to 10) in the modified examples (the second to fourteenth modified examples). Figures 9 to 21 In the example of FIG. 1 , the terminals T1 , T2 , and T3 are omitted.

[0117] <1-4-1. First Modification>

[0118] like Figure 6 As shown, the second laminate 20 of the magnetoresistive element 1B of the first modification is provided at the end of the upper surface of the first laminate 10 while being offset to the right from the center of the upper surface of the first laminate 10. In addition, the magnetoresistive element 1B of the first modification does not include the terminal T2 of the first embodiment, but includes only the terminal T1 and the terminal T3.

[0119] In such a configuration, Figure 6 As shown, when writing data "1" to the magnetoresistive element 1B, voltages are applied to the terminals T1 and T3 of the magnetoresistive element 1B, respectively. For example, when voltages (-V, +V) are applied to the terminals T1 and T3, respectively, a write current (in-plane current) flowing from the terminal T3 side to the terminal T1 side flows through the first laminate 10. The subsequent write operation is similar to the write operation in the above-described embodiment.

[0120] like Figure 7 As shown, even when writing data "0" to the magnetoresistive element 1B, voltages are applied to the terminals T1 and T3 of the magnetoresistive element 1B, respectively. For example, when voltages (+V, -V) opposite to the above voltages are applied to the terminals T1 and T3, respectively, a write current (in-plane current) flowing from the terminal T1 side to the terminal T3 side flows through the first laminate 10. The subsequent write operation is similar to the write operation in the above-described embodiment.

[0121] like Figure 8 As shown, when reading data "1" or "0" from the magnetoresistive element 1B, a predetermined voltage is applied between the terminal T1 and the terminal T3. According to the applied voltage and the magnitude of the read current, the resistance state of the current path passing through the first laminate 10 and the second laminate 20 is determined by the controller 50, and one bit of data is specified from the resistance state.

[0122] In the first modification and the above-described embodiment, the storage layer 21 is laminated on a portion of the upper surface of the first laminate 10, but the present invention is not limited thereto, and the storage layer 21 may be laminated on the entire upper surface of the first laminate 10. According to this structure, the magnetoresistive element 1A can be easily manufactured. In addition, in the first modification, the second laminate 20 is laminated at a position offset from the center of the upper surface of the first laminate 10 in the right direction (in the figure), but the second laminate 20 may be laminated at a position offset in the opposite left direction.

[0123] <1-4-2. Second Modification>

[0124] like Fig. 9 As shown, the magnetoresistive element 1C according to the second modification includes the first laminate 10 and the second laminate 20 according to the above embodiment. The first laminate 10 includes the nonmagnetic metal layer 11 and the magnetic layer 12 according to the above embodiment. The nonmagnetic metal layer 11 includes only the first spin injection layer 11a.

[0125] In the magnetoresistive element 1C, depending on the direction of the current (the direction in which the current flows), the upward spin or the downward spin enters the storage layer 21 or the magnetic layer 12. It should be noted that when the upward spin enters the storage layer 21, the downward spin enters the magnetic layer 12, and when the downward spin enters the storage layer 21, the upward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12 and the magnetization of the storage layer 21. In addition, a torque is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization direction of the magnetic layer 12 and the magnetization direction of the storage layer 21 change.

[0126] <1-4-3. Third Modification>

[0127] like Fig.10 As shown, the magnetoresistive element 1D according to the third modification includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 includes an upper non-magnetic metal layer 11, a magnetic layer 12 according to the above-mentioned embodiment, and a lower non-magnetic metal layer 11. The upper non-magnetic metal layer 11 includes only the first spin injection layer 11a. The lower non-magnetic metal layer 11 includes only the second spin injection layer 11b. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b.

[0128] In the magnetoresistive element 1D, an upward spin or a downward spin enters the memory layer 21 or the magnetic layer 12 according to the direction of the current. The upward spin or the downward spin enters the memory layer 21 from the upper first spin injection layer 11a, and the upward spin or the downward spin enters the magnetic layer 12 from the upper first spin injection layer 11a and the lower second spin injection layer 11b. It should be noted that when the upward spin enters the memory layer 21, the downward spin enters the magnetic layer 12, and when the downward spin enters the memory layer 21, the upward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12 and the magnetization of the memory layer 21. In addition, a torque is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization direction of the magnetic layer 12 and the magnetization direction of the memory layer 21 change.

[0129] <1-4-4. Fourth Modification>

[0130] like Fig.11 As shown, the magnetoresistive element 1E according to the fourth modification includes the first laminate 10 and the second laminate 20 according to the above embodiment. The first laminate 10 includes the nonmagnetic metal layer 11 and the magnetic layer 12 according to the above embodiment. The nonmagnetic metal layer 11 includes only the second spin injection layer 11b.

[0131] In the magnetoresistive element 1E, an upward spin or a downward spin enters the storage layer 21 or the magnetic layer 12 according to the direction of the current. It should be noted that when an upward spin enters the storage layer 21, a downward spin enters the magnetic layer 12, and when a downward spin enters the storage layer 21, an upward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12 and the magnetization of the storage layer 21. In addition, a torque is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization direction of the magnetic layer 12 and the magnetization direction of the storage layer 21 change.

[0132] <1-4-5. Fifth Modification>

[0133] like Fig.12 As shown, the magnetoresistive element 1F according to the fifth modification includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 includes an upper non-magnetic metal layer 11, a magnetic layer 12 according to the above-mentioned embodiment, and a lower non-magnetic metal layer 11. The upper non-magnetic metal layer 11 includes only the second spin injection layer 11b. The lower non-magnetic metal layer 11 includes only the first spin injection layer 11a. It should be noted that the magnetic layer 12 is sandwiched between the second spin injection layer 11b and the first spin injection layer 11a.

[0134] In the magnetoresistive element 1F, the upward spin or the downward spin enters the memory layer 21 or the magnetic layer 12 according to the direction of the current. The upward spin or the downward spin enters the memory layer 21 from the upper second spin injection layer 11b, and the upward spin or the downward spin enters the magnetic layer 12 from the upper second spin injection layer 11b and the lower first spin injection layer 11a. It should be noted that when the upward spin enters the memory layer 21, the downward spin enters the magnetic layer 12, and when the downward spin enters the memory layer 21, the upward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12 and the magnetization of the memory layer 21. In addition, a torque is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization direction of the magnetic layer 12 and the magnetization direction of the memory layer 21 change.

[0135] <1-4-6. Sixth Modification>

[0136] like Fig.13As shown, the magnetoresistive element 1G according to the sixth modification includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 includes the non-magnetic metal layer 11 and the magnetic layer 12 according to the above-mentioned embodiment. The non-magnetic metal layer 11 does not include a spin injection layer, but only includes a metal layer (non-spin injection metal layer) 11c that does not inject spins into the storage layer 21. The metal layer 11c is composed of a heavy metal such as Cu, for example.

[0137] In the magnetoresistive element 1G, torque corresponding to the upward spin or downward spin is generated according to the direction of the current by the GMR effect, and the torque acts on the magnetic layer 12. Therefore, the magnetization of the magnetic layer 12 changes, the magnetization acts on the magnetization of the storage layer 21, and the magnetization direction of the storage layer 21 changes.

[0138] <1-4-7. Seventh Modification>

[0139] like Fig.14 As shown, the magnetoresistive element 1H according to the seventh variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 includes an upper non-magnetic metal layer 11, a magnetic layer 12 according to the above-mentioned embodiment, and a lower non-magnetic metal layer 11. The upper non-magnetic metal layer 11 does not include a spin injection layer, but only includes a metal layer (non-spin injection metal layer) 11c that does not inject spins into the storage layer 21. The metal layer 11c is composed of a heavy metal such as Cu, for example. The lower non-magnetic metal layer 11 includes only a first spin injection layer 11a. Note that the magnetic layer 12 is sandwiched between the metal layer 11c and the first spin injection layer 11a.

[0140] In the magnetoresistive element 1H, depending on the direction of the current, an upward spin or a downward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12. In addition, in the magnetic layer 12, a torque corresponding to the upward spin or the downward spin is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization of the magnetic layer 12 changes, the magnetization acts on the magnetization of the storage layer 21, and the magnetization direction of the storage layer 21 changes.

[0141] <1-4-8. Eighth Modification>

[0142] like Fig.15As shown, the magnetoresistive element 1I according to the eighth variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 includes an upper non-magnetic metal layer 11, a magnetic layer 12 according to the above-mentioned embodiment, and a lower non-magnetic metal layer 11. The upper non-magnetic metal layer 11 does not include a spin injection layer, but only includes a metal layer (non-spin injection metal layer) 11c that does not inject spins into the storage layer 21. The metal layer 11c is composed of a heavy metal such as Cu, for example. The lower non-magnetic metal layer 11 includes only a second spin injection layer 11b. It should be noted that the magnetic layer 12 is sandwiched between the metal layer 11c and the second spin injection layer 11b.

[0143] In the magnetoresistive element 1I, as in the seventh modification, depending on the direction of the current, the upward spin or the downward spin enters the magnetic layer 12. The spin-orbit torque due to the upward spin or the downward spin acts on the magnetization of the magnetic layer 12. In addition, in the magnetic layer 12, a torque corresponding to the upward spin or the downward spin is generated by the GMR effect, and the torque acts on the magnetic layer 12. By this action, the magnetization of the magnetic layer 12 changes, the magnetization acts on the magnetization of the storage layer 21, and the magnetization direction of the storage layer 21 changes.

[0144] <1-4-9. Ninth Modification Example>

[0145] like Fig.16 As shown, the magnetoresistive element 1J according to the ninth variation includes the first laminate 10 and the second laminate 20 according to the above-described embodiment. The first laminate 10 is configured by alternately laminating the nonmagnetic metal layer 11 and the magnetic layer 12 multiple times. The nonmagnetic metal layer 11 includes a first spin injection layer 11a and a second spin injection layer 11b. In the nonmagnetic metal layer 11, the first spin injection layer 11a is located on the upper layer side, that is, on the storage layer 21 side of the second spin injection layer 11b. It should be noted that the magnetic layer 12 is sandwiched between the second spin injection layer 11b and the first spin injection layer 11a. In such a magnetoresistive element 1J, writing and reading substantially the same as those in the above-described embodiment are performed.

[0146] <1-4-10. Tenth Modification>

[0147] like Fig.17As shown, the magnetoresistive element 1K according to the tenth variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 is configured by alternately laminating the non-magnetic metal layer 11 and the magnetic layer 12 multiple times. The non-magnetic metal layer 11 includes a first spin injection layer 11a and a second spin injection layer 11b. In the non-magnetic metal layer 11, the second spin injection layer 11b is located on the upper layer side, that is, on the storage layer 21 side of the first spin injection layer 11a. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b. In such a magnetoresistive element 1K, writing and reading substantially the same as those in the above-mentioned embodiment are performed.

[0148] <1-4-11. Eleventh Modification>

[0149] like Fig.18 As shown, the magnetoresistive element 1L of the modification 11 has the first laminated body 10 and the second laminated body 20 of the above-mentioned embodiment. The first laminated body 10 is configured by alternately laminating the non-magnetic metal layer 11 and the magnetic layer 12 multiple times. Specifically, the second spin injection layer 11b, the magnetic layer 12, the first spin injection layer 11a, the magnetic layer 12, the second spin injection layer 11b, the magnetic layer 12 and the first spin injection layer 11a are laminated in this order. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b. In such a magnetoresistive element 1L, writing and reading are performed in a manner substantially the same as in the above-mentioned embodiment.

[0150] <1-4-12. Twelfth Modification>

[0151] like Fig.19 As shown, the magnetoresistive element 1M according to the twelfth variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 is configured by alternately laminating the non-magnetic metal layer 11 and the magnetic layer 12 multiple times. Specifically, the first spin injection layer 11a, the magnetic layer 12, the second spin injection layer 11b, the magnetic layer 12, the first spin injection layer 11a, the magnetic layer 12, and the second spin injection layer 11b are laminated in this order. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b. In such a magnetoresistive element 1M, writing and reading substantially the same as those in the above-mentioned embodiment are basically performed.

[0152] <1-4-13. Thirteenth Modification>

[0153] like Fig. 20As shown, the magnetoresistive element 1N according to the thirteenth variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 is configured by alternately laminating the non-magnetic metal layer 11 and the magnetic layer 12 multiple times. Specifically, the first spin injection layer 11a, the magnetic layer 12, the second spin injection layer 11b, the magnetic layer 12, the first spin injection layer 11a, the second spin injection layer 11b, the magnetic layer 12, and the first spin injection layer 11a are laminated in this order. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b. In such a magnetoresistive element 1N, writing and reading are performed in a manner substantially the same as in the above-mentioned embodiment.

[0154] <1-4-14. Fourteenth Modification>

[0155] like Fig.21 As shown, the magnetoresistive element 10 according to the fourteenth variation includes the first laminate 10 and the second laminate 20 according to the above-mentioned embodiment. The first laminate 10 is configured by alternately laminating the non-magnetic metal layer 11 and the magnetic layer 12 multiple times. Specifically, the second spin injection layer 11b, the magnetic layer 12, the first spin injection layer 11a, the magnetic layer 12, the second spin injection layer 11b, the first spin injection layer 11a, the magnetic layer 12, and the second spin injection layer 11b are laminated in this order. It should be noted that the magnetic layer 12 is sandwiched between the first spin injection layer 11a and the second spin injection layer 11b. In such a magnetoresistive element 10, writing and reading are performed in a manner substantially the same as in the above-mentioned embodiment.

[0156] <1-5. Actions and Effects>

[0157] As described above, according to the embodiment, any one of the magnetoresistive elements 1A to 10 includes a first laminate 10, a storage layer 21 laminated on the first laminate 10 and having a changeable magnetization direction, a non-magnetic layer 22 laminated on the storage layer 21, and a reference layer 23 laminated on the non-magnetic layer 22 and having a fixed magnetization direction, wherein the first laminate 10 includes a magnetic layer 12 having a changeable magnetization direction and a non-magnetic metal layer 11 laminated on the magnetic layer 12 (see Figure 1 Therefore, the write current can be suppressed by using a magnetic material having a higher spin conversion efficiency than the non-magnetic material used for the first laminate 10, and thus, the power consumption can be reduced.

[0158] In addition, the nonmagnetic metal layer 11 may include a first spin injection layer 11a having a spin Hall angle of a first sign and a second spin injection layer 11b having a spin Hall angle of a second sign different from the first sign (see Figure 1As a result, the deterioration of the spin-orbit torque (SOT) can be suppressed by suppressing the cancellation between the upward spins or between the downward spins, so that the write current can be further suppressed.

[0159] In addition, the first spin injection layer 11a or the second spin injection layer 11b may be provided in contact with the storage layer 21 (see Figure 1 Even with such a configuration, the write current can be suppressed.

[0160] In addition, the nonmagnetic metal layer 11 may be a first spin injection layer 11a having a spin Hall angle of a first sign (see Fig. 9 and Fig.11 ). Even with such a configuration, the write current can be suppressed.

[0161] Furthermore, the first laminate 10 may further include a second nonmagnetic metal layer 11 in which the magnetic layer 12 is laminated in addition to the first spin injection layer 11a, and the second nonmagnetic metal layer 11 may be a second spin injection layer 11b having a spin Hall angle of a second sign different from the first sign (see Fig.10 and Fig.12 ). Even with such a configuration, the write current can be suppressed.

[0162] In addition, the nonmagnetic metal layer 11 may be a metal layer 11c that does not inject spin into the storage layer 21 (see Fig.13 ). Even with such a configuration, the write current can be suppressed.

[0163] In addition, the first laminate 10 may further include a second non-magnetic metal layer 11 on which the magnetic layer 12 is laminated in addition to the non-spin injection metal layer 11c, and the second non-magnetic metal layer 11 may be a spin injection layer having a spin Hall angle of the first sign (see Fig.14 and Fig.15 ). Even with such a configuration, the write current can be suppressed.

[0164] In addition, the first laminate 10 may include a plurality of magnetic layers 12 and a plurality of non-magnetic metal layers 11, and the magnetic layers 12 and the non-magnetic metal layers 11 may be alternately laminated (see Figures 1 to 8 and Figures 16 to 21 ). Even with such a configuration, the write current can be suppressed.

[0165] In addition, the plurality of magnetic layers 12 can be antiferromagnetically coupled to each other. Therefore, since the spin conversion efficiency can be increased, the write current can be further suppressed.

[0166] In addition, each of the plurality of nonmagnetic metal layers 11 may include a first spin injection layer 11a having a spin Hall angle of a first sign and a second spin injection layer 11b having a spin Hall angle of a second sign different from the first sign (see Fig.16 and Fig.17 ). Even with such a configuration, the write current can be suppressed.

[0167] In addition, the plurality of nonmagnetic metal layers 11 may be configured such that the lamination order of the first spin injection layer 11a and the second spin injection layer 11b is the same (see Fig.16 and Fig.17 ). Even with such a configuration, the write current can be suppressed.

[0168] In addition, each of the plurality of non-magnetic metal layers 11 may include a first spin injection layer 11a having a spin Hall angle of a first sign or a second spin injection layer 11b having a spin Hall angle of a second sign different from the first sign, and each of the plurality of magnetic layers 12 may be sandwiched between the first spin injection layer 11a and the second spin injection layer 11b (see Fig.18 and Fig.19 ). Even with such a configuration, the write current can be suppressed.

[0169] In addition, at least one of the plurality of nonmagnetic metal layers 11 may include a first spin injection layer 11a having a spin Hall angle of a first sign and a second spin injection layer 11b having a spin Hall angle of a second sign different from the first sign (see Fig. 20 and Fig.21 ). Even with such a configuration, the write current can be suppressed.

[0170] Furthermore, the nonmagnetic layer 22 may be a tunnel barrier layer. Even with such a configuration, the write current can be suppressed.

[0171] Furthermore, any one of the magnetoresistive elements 1A to 10 may include two terminals T1 and T2 provided in the first laminate 10 and one terminal T3 provided in the reference layer 23. Even with such a configuration, the write current can be suppressed.

[0172] <2. Storage device (application example)>

[0173] See also Fig. 22 and Fig.23 , a storage device 100 to which any one of the magnetoresistive elements 1A to 10 of the above-described embodiments (including modified examples) is applied will be described. Fig. 22 is a diagram showing a configuration example of a storage device 100 according to an application example. The storage device 100 is an example of a storage device that stores information using the magnetization direction of a magnetic material. Fig.23is a diagram showing a configuration example of the storage unit 111 according to an application example. Fig.23 In the example of FIG. 1 , a memory cell 111 is shown, which is a magnetic memory cell of one bit.

[0174] like Fig. 22 As shown, the memory device 100 according to the second embodiment includes a memory cell array 110 , an X driver 120 , a Y driver 130 , and a controller 140 .

[0175] The memory cell array 110 includes a plurality of memory cells 111. The memory cells 111 are arranged in a matrix structure, and each memory cell 111 includes a magnetoresistive element 1A. The X driver 120 is connected to a plurality of word lines WL (N), the Y driver 130 is connected to a plurality of bit lines BL (N_N), and the driver functions as a write unit and a read unit. The controller 150 performs processing of write / read commands, control of data input / output, and the like. For example, the controller 150 controls writing and reading of data in response to commands such as write and read commands.

[0176] like Fig.23 As shown, the memory cell 111 includes a magnetoresistive element 1A, a first transistor Tr1, and a second transistor Tr2. A first bit line BL1, a second bit line BL2, a word line WL, and a ground line GND are connected to the memory cell 111. The first bit line BL1 and the second bit line BL2 are wired to extend in the column direction, and the word line WL and the ground line GND are wired to extend in the row direction. In the memory cell 111, an element other than the magnetoresistive element 1A, for example, any one of the magnetoresistive elements 1B to 10 can be used.

[0177] When data is written into such a memory cell 111, a difference is provided in the level setting (potential) between the first bit line BL1 and the second bit line BL2. Therefore, a write current is introduced into the first laminate 10, the magnetization direction of the storage layer 21 is reversed, and data is written. Note that the write scheme is basically the same as the above-described embodiment.

[0178] In addition, when reading data from the memory cell 111, after the word line WL is set to an effective level, one of the first transistor Tr1 and the second transistor Tr2 is turned on and set to a high level, and the other is turned off. Therefore, a read current flows from the lower surface of the first laminate 10 via the first laminate 10 and the second laminate 20 to the ground line GND, and data is read from the resistance value of the current path. Note that the read scheme is basically similar to the read scheme of the above-mentioned embodiment.

[0179] Also in the storage device 100 configured as described above, by using any of the above-described magnetoresistive elements 1A to 10, it is possible to suppress the write current and realize low-power writing, that is, reduce the power consumption.

[0180] <3. Electronic equipment (application examples)>

[0181] As an electronic device to which the storage device 100 is applied, reference is made to Figure 24 to Figure 27 The imaging device 300, the distance measuring device 400, and the game device 900 are described. For example, each of the imaging device 300, the distance measuring device 400, and the game device 900 uses the above-described storage device 100 as a memory.

[0182] <3-1. Imaging device>

[0183] Reference Fig.26 An imaging device 300 to which the above-described storage device 100 is applied is described. Fig.26 is a diagram showing an example of a schematic configuration of an imaging device 300 according to an application example. The imaging device 300 is an example of an electronic device to which the above-described storage device 100 is applied. Examples of the imaging device 300 include electronic devices such as a digital camera, a video camera, a smartphone with an imaging function, a mobile phone, and the like.

[0184] like Fig.26 As shown, the imaging device 300 includes an optical system 301, a shutter device 302, an imaging element 303, a control circuit (drive circuit) 304, a signal processing circuit 305, a monitor 306, and a memory 307. The imaging device 300 can capture still images and moving images.

[0185] The optical system 301 includes one or more lenses and guides light (incident light) from a subject to the imaging element 303 , and forms an image on the light receiving surface of the imaging element 303 .

[0186] The shutter device 302 is provided between the optical system 301 and the imaging element 303. The shutter device 302 controls a light irradiation period and a light shielding period for the imaging element 303 according to the control of the control circuit 304.

[0187] The imaging element 303 accumulates signal charges for a certain period of time according to light formed on the light receiving surface via the optical system 301 and the shutter device 302. According to a drive signal (timing signal) supplied from the control circuit 304, the signal charges accumulated in the imaging element 303 are transferred.

[0188] The control circuit 304 outputs a drive signal for controlling the transfer operation of the imaging element 303 and the shutter operation of the shutter device 302 to drive the imaging element 303 and the shutter device 302 .

[0189] The signal processing circuit 305 performs various types of signal processing on the signal charge output from the imaging element 303. An image (image data) obtained by the signal processing by the signal processing circuit 305 is supplied to the monitor 306 and also supplied to the memory 307.

[0190] The monitor 306 displays a moving image or a still image captured by the imaging element 303 based on the image data supplied from the signal processing circuit 305. The monitor 306 uses a panel type display device such as a liquid crystal panel or an organic electroluminescent (EL) panel, for example.

[0191] The memory 307 stores the image data supplied from the signal processing circuit 305, that is, the image data of a moving image or a still image captured by the imaging element 303. The memory 307 corresponds to the storage device 100 described above.

[0192] Also in the imaging device 300 configured in this manner, by using the above-described storage device 100 as the memory 307 , it is possible to suppress the writing current, and achieve low-power writing, that is, reduction in power consumption.

[0193] <3-2. Distance measuring device>

[0194] Reference Fig.25 A distance measuring device 400 to which the above-described storage device 100 is applied is described. Fig.25 2 is a diagram showing an example of a schematic configuration of a distance measuring device 400 according to an application example. The distance measuring device 400 is an example of an electronic device to which the above-described storage device 100 is applied.

[0195] like Fig.25 As shown, the distance measuring device (distance image sensor) 400 includes a light source unit 401, an optical system 402, a solid-state imaging device (imaging element) 403, a control circuit (driving circuit) 404, a signal processing circuit 405, a monitor 406, and a memory 407. The distance measuring device 400 can acquire an image according to the distance to the object by projecting light from the light source unit 401 toward the object and receiving light (modulated light or pulsed light) reflected from the surface of the object.

[0196] The light source unit 401 projects light toward the subject. As the light source unit 401, for example, a vertical cavity surface emitting laser (VCSEL) array that emits laser light as a surface light source or a laser diode array in which laser diodes are arranged in a line is used. It should be noted that the laser diode array is supported by a predetermined driving unit (not shown) and scans in a direction perpendicular to the array direction of the laser diodes.

[0197] The optical system 402 includes one or more lenses. The optical system 402 guides light (incident light) from a subject to the solid-state imaging device 403 to form an image on a light receiving surface (sensor unit) of the solid-state imaging device 403 .

[0198] The solid-state imaging device 403 stores signal charge according to light of an image formed on a light receiving surface via the optical system 402. A signal representing a distance obtained from a light receiving signal (APD OUT) output from the solid-state imaging device 403 is supplied to a signal processing circuit 405. As the solid-state imaging device 403, for example, a solid-state imaging element such as an image sensor is used.

[0199] The control circuit 404 outputs a drive signal (control signal) for controlling the operation of the light source unit 401 , the solid-state imaging device 403 , and the like to drive the light source unit 401 , the solid-state imaging device 403 , and the like.

[0200] The signal processing circuit 405 performs various types of signal processing on the distance signal provided from the solid-state imaging device 403. For example, the signal processing circuit 405 performs image processing (e.g., histogram processing, peak detection processing, etc.) to construct a distance image based on the distance signal. The image (image data) obtained by the signal processing performed by the signal processing circuit 405 is provided to the monitor 406 and also provided to the memory 407.

[0201] The monitor 406 displays the distance image captured by the imaging element 303 based on the image data supplied from the signal processing circuit 405. As the monitor 406, for example, a panel type display device such as a liquid crystal panel or an organic EL panel is used.

[0202] The memory 407 stores the image data supplied from the signal processing circuit 405, that is, the image data of the range image captured by the imaging element 303. The memory 407 corresponds to the storage device 100 described above.

[0203] Also in the distance measuring device 400 configured in this manner, by using the above-described storage device 100 as the memory 407 , it is possible to suppress the writing current and realize low-power writing, that is, reduction in power consumption.

[0204] <3-3. Gaming equipment>

[0205] Reference Fig.26 and Fig. 27 A game device 900 to which the above-described storage apparatus 100 is applied will be described. Fig.26 : is a perspective view (external perspective view) showing an example of a schematic configuration of a game device 900 according to an application example. Fig. 271 is a block diagram showing an example of a schematic configuration of a game device 900 according to an application example. The game device 900 is an example of an electronic device to which the above-described storage apparatus 100 is applied.

[0206] like Fig.26 As shown, for example, the game device 900 has an appearance in which each component is arranged inside and outside a housing 901 formed in a horizontally long flat shape.

[0207] On the front surface of the housing 901, a display panel 902 is provided at the center in the longitudinal direction thereof. In addition, an operation key 903 and an operation key 904 are provided on the left and right sides of the display panel 902, respectively, and are spaced apart from each other in the circumferential direction. An operation key 905 is provided at the lower end of the front surface of the housing 901. The operation keys 903, 904, and 905 are used as direction keys, a determination key, etc., and are used to select a menu item displayed on the display panel 902, a progress of a game, etc.

[0208] On the upper surface of the outer housing 901 , a connection terminal 906 for connecting an external device, a power terminal 907 , a light receiving window 908 for performing infrared communication with an external device, and the like are provided.

[0209] like Fig. 27 As shown, the game device 900 includes an arithmetic processing unit 910 including a central processing unit (CPU), a storage unit 920 storing various types of information, and a controller 930 controlling each configuration of the game device 900. Power is supplied to the arithmetic processing unit 910 and the controller 930 from, for example, a battery (not shown).

[0210] The arithmetic processing unit 910 generates a menu screen for allowing the user to set various types of information or select an application. In addition, the arithmetic processing unit 910 executes an application selected by the user.

[0211] The storage unit 920 stores various types of information set by the user. The storage unit 920 corresponds to the storage device 100 described above.

[0212] The controller 930 includes an input receiving unit 931, a communication processing unit 933, and a power controller 935. The input receiving unit 931 detects, for example, the state of the operation keys 903, 904, and 905. In addition, the communication processing unit 933 performs communication processing with an external device. The power controller 935 controls the power supplied to each unit of the game device 900.

[0213] In the gaming machine 900 configured in this manner, by using the above-described storage device 100 as the storage unit 920, it is possible to suppress the writing current, thereby achieving low-power consumption writing, that is, reduction in power consumption.

[0214] Note that the above-described memory device 100 may be mounted on the same semiconductor chip together with a semiconductor circuit forming an operation device or the like to form a semiconductor device (system on chip: SoC).

[0215] In addition, the above-mentioned storage device 100 can be installed on various electronic devices on which a memory (storage unit) can be installed, as described above. For example, in addition to the imaging device 300 and the game device 900, the storage device 100 can be installed on various electronic devices such as a hard disk drive (HDD), a notebook personal computer (PC), a mobile device (e.g., a smart phone, a tablet PC, etc.), a personal digital assistant (PDA), a wearable device, and a music device. For example, the above-mentioned storage device 100 is used as various memories such as a memory.

[0216] <4. Other Implementation Methods>

[0217] In addition to the above-described embodiments, the configuration according to the above-described embodiments may be implemented in various different forms. For example, the configuration is not limited to the above-described examples and may be various modes. In addition, for example, unless otherwise specified, information including the configuration, processing procedures, specific names, and various types of data and parameters shown in the document and the drawings may be freely and selectively changed.

[0218] In addition, each component of each device shown in the drawings is conceptual in function and is not necessarily physically configured as shown in the drawings. That is, the specific form of distribution and integration of each device is not limited to the form shown, and all or part of it can be functionally or physically distributed and integrated in any unit according to various loads, usage conditions, etc.

[0219] In addition, the above-described embodiments (or modified examples) can be appropriately combined within the range that does not contradict the processing contents. In addition, the effects described in this specification are only examples and are not limited, and other effects can be obtained.

[0220] <5. Appendix>

[0221] It should be noted that the present technology can also have the following configurations. (1)

[0223] A magnetoresistive element, comprising:

[0224] Laminates;

[0225] a storage layer laminated on the laminate and having a changeable magnetization direction;

[0226] a nonmagnetic layer laminated on the storage layer; and

[0227] A reference layer, laminated on the nonmagnetic layer and having a fixed magnetization direction, wherein

[0228] The laminate comprises:

[0229] a magnetic layer having a changeable magnetization direction; and

[0230] A non-magnetic metal layer laminated on a magnetic layer. (2)

[0232] The magnetoresistive element according to (1), wherein:

[0233] The non-magnetic metal layer includes:

[0234] a first spin injection layer having a spin Hall angle of a first sign, and

[0235] The second spin injection layer has a spin Hall angle of a second sign different from the first sign. (3)

[0237] The magnetoresistive element according to (2), wherein:

[0238] The first spin injection layer or the second spin injection layer is disposed in contact with the memory layer. (4)

[0240] The magnetoresistive element according to (1), wherein:

[0241] The nonmagnetic metal layer is a first spin injection layer having a spin Hall angle of a first sign. (5)

[0243] The magnetoresistive element according to (4), wherein:

[0244] The laminate further includes a second non-magnetic metal layer, the magnetic layer is laminated in the second non-magnetic metal layer, and

[0245] The second nonmagnetic metal layer is a second spin injection layer having a spin Hall angle of a second sign different from the first sign. (6)

[0247] The magnetoresistive element according to (1), wherein:

[0248] The nonmagnetic metal layer is a metal layer configured not to inject spins into the memory layer. (7)

[0250] The magnetoresistive element according to (6), wherein:

[0251] The laminate further includes a second non-magnetic metal layer, the magnetic layer is laminated in the second non-magnetic metal layer, and

[0252] The second nonmagnetic metal layer is a spin injection layer having a spin Hall angle of a first sign. (8)

[0254] The magnetoresistive element according to (1), wherein:

[0255] The laminate comprises:

[0256] multiple magnetic layers, and

[0257] multiple non-magnetic metal layers, and

[0258] Magnetic layers and non-magnetic metal layers are alternately laminated. (9)

[0260] The magnetoresistive element according to (8), wherein:

[0261] The plurality of magnetic layers are antiferromagnetically coupled to each other. (10)

[0263] The magnetoresistive element according to (8) or (9), wherein:

[0264] Each of the plurality of non-magnetic metal layers comprises:

[0265] a first spin injection layer having a spin Hall angle of a first sign, and

[0266] The second spin injection layer has a spin Hall angle of a second sign different from the first sign. (11)

[0268] The magnetoresistive element according to (10), wherein:

[0269] The plurality of nonmagnetic metal layers are configured such that the first spin injection layer and the second spin injection layer have the same lamination order. (12)

[0271] The magnetoresistive element according to (8) or (9), wherein:

[0272] Each of the plurality of nonmagnetic metal layers includes a first spin injection layer having a spin Hall angle of a first sign or a second spin injection layer having a spin Hall angle of a second sign different from the first sign, and

[0273] Each of the plurality of magnetic layers is sandwiched between a first spin injection layer and a second spin injection layer. (13)

[0275] The magnetoresistive element according to (12), wherein:

[0276] At least one of the plurality of non-magnetic metal layers comprises:

[0277] The first spin injection layer has a spin Hall angle of a first sign, and

[0278] The second spin injection layer has a spin Hall angle of a second sign different from the first sign. (14)

[0280] The magnetoresistive element according to any one of (1) to (13), wherein the nonmagnetic layer is a tunnel barrier layer. (15)

[0282] The magnetoresistive element according to any one of (1) to (14), further comprising: two terminals provided in the laminated body; and

[0283] A terminal, set in the reference layer. (16)

[0285] A storage device, comprising:

[0286] A plurality of magnetoresistive elements, wherein

[0287] Each of the plurality of magnetoresistive elements comprises:

[0288] Laminate,

[0289] a storage layer laminated on the laminate and having a variable magnetization direction, a nonmagnetic layer laminated on the storage layer, and

[0290] a reference layer laminated on the nonmagnetic layer and having a fixed magnetization direction, and a laminate comprising:

[0291] a magnetic layer having a changeable magnetization direction; and

[0292] A non-magnetic metal layer laminated on a magnetic layer. (17)

[0294] An electronic device, comprising:

[0295] storage device, wherein

[0296] The storage device includes:

[0297] A plurality of magnetoresistive elements,

[0298] Each of the plurality of magnetoresistive elements comprises:

[0299] Laminate,

[0300] a storage layer laminated on the laminate and having a variable magnetization direction, a nonmagnetic layer laminated on the storage layer, and

[0301] a reference layer laminated on the nonmagnetic layer and having a fixed magnetization direction, and a laminate comprising:

[0302] a magnetic layer having a changeable magnetization direction; and

[0303] A non-magnetic metal layer laminated on a magnetic layer. (18)

[0305] A storage device includes the magnetoresistive element of any one of (1) to (15). (19)

[0307] An electronic device comprises the storage device according to (18).

[0308] Reference Numbers List

[0309] 1A magnetoresistive element

[0310] 1B Magnetoresistive element

[0311] 1C Magnetoresistive element

[0312] 1D magnetoresistive element

[0313] 1E Magnetoresistive element

[0314] 1F Magnetoresistive element

[0315] 1G Magnetoresistive Element

[0316] 1H Magnetoresistive element

[0317] 1I Magnetoresistive element

[0318] 1J Magnetoresistive element

[0319] 1K Magnetoresistive Element

[0320] 1L Magnetoresistive element

[0321] 1M Magnetoresistive Element

[0322] 1N magnetoresistive element

[0323] 1O Magnetoresistive element

[0324] 10. First laminate

[0325] 11A First spin injection layer

[0326] 11B Second spin injection layer

[0327] 11C Metal Layer

[0328] 11 Non-magnetic metal layer

[0329] 12 Magnetic layer

[0330] 20 Second laminate

[0331] 21 Storage Layer

[0332] 22 Non-magnetic layer

[0333] 23 Reference Layer

[0334] 30 Laminated structure

[0335] 31 Magnetic layer

[0336] 32 Non-magnetic metal layer

[0337] 50 Controller

[0338] 100 Storage Device

[0339] 300 Imaging Device

[0340] 400 Distance Measuring Device

[0341] 900 Gaming Equipment

[0342] T1 terminal

[0343] T2 terminal

[0344] T3 terminal

Claims

1. A magnetoresistive element, comprising: Laminates; a storage layer laminated on the laminate and having a changeable magnetization direction; a non-magnetic layer laminated on the storage layer; as well as a reference layer laminated on the nonmagnetic layer and having a fixed magnetization direction, wherein The laminate comprises: a magnetic layer having a changeable magnetization direction; and The non-magnetic metal layer is laminated on the magnetic layer.

2. The magnetoresistive element according to claim 1, wherein The non-magnetic metal layer comprises: a first spin injection layer having a spin Hall angle of a first sign, and The second spin injection layer has a spin Hall angle of a second sign different from the first sign.

3. The magnetoresistive element according to claim 2, wherein: The first spin injection layer or the second spin injection layer is disposed in contact with the memory layer.

4. The magnetoresistive element according to claim 1, wherein The nonmagnetic metal layer is a first spin injection layer having a spin Hall angle of a first sign.

5. The magnetoresistive element according to claim 4, wherein: The laminate further includes a second non-magnetic metal layer, the magnetic layer is laminated in the second non-magnetic metal layer, and The second nonmagnetic metal layer is a second spin injection layer having a spin Hall angle of a second sign different from the first sign.

6. The magnetoresistive element according to claim 1, wherein The nonmagnetic metal layer is a metal layer configured not to inject spins into the memory layer.

7. The magnetoresistive element according to claim 6, wherein: The laminate further includes a second non-magnetic metal layer, the magnetic layer is laminated in the second non-magnetic metal layer, and The second nonmagnetic metal layer is a spin injection layer having a spin Hall angle of a first sign.

8. The magnetoresistive element according to claim 1, wherein The laminate comprises: a plurality of said magnetic layers, and a plurality of said non-magnetic metal layers, and The magnetic layers and the nonmagnetic metal layers are alternately laminated.

9. The magnetoresistive element according to claim 8, wherein: The plurality of magnetic layers are antiferromagnetically coupled to each other.

10. The magnetoresistive element according to claim 8, wherein Each of the plurality of non-magnetic metal layers comprises: a first spin injection layer having a spin Hall angle of a first sign, and The second spin injection layer has a spin Hall angle of a second sign different from the first sign.

11. The magnetoresistive element according to claim 10, wherein The plurality of nonmagnetic metal layers are configured such that the first spin injection layer and the second spin injection layer have the same lamination order.

12. The magnetoresistive element according to claim 8, wherein Each of the plurality of nonmagnetic metal layers includes a first spin injection layer having a spin Hall angle of a first sign or a second spin injection layer having a spin Hall angle of a second sign different from the first sign, and Each of the plurality of magnetic layers is sandwiched between the first spin injection layer and the second spin injection layer.

13. The magnetoresistive element according to claim 12, wherein: At least one of the plurality of non-magnetic metal layers comprises: The first spin injection layer has a spin Hall angle of a first sign, and The second spin injection layer has a spin Hall angle of a second sign different from the first sign.

14. The magnetoresistive element according to claim 1, wherein The nonmagnetic layer is a tunnel barrier layer.

15. The magnetoresistive element according to claim 1, further comprising: two terminals disposed in the laminate; as well as A terminal is provided in the reference layer.

16. A storage device, comprising: A plurality of magnetoresistive elements, wherein Each of the plurality of magnetoresistive elements comprises: Laminate, a storage layer laminated on the laminate and having a changeable magnetization direction, a non-magnetic layer laminated on the storage layer, and a reference layer laminated on the nonmagnetic layer and having a fixed magnetization direction, and The laminate comprises: a magnetic layer having a changeable magnetization direction; and The non-magnetic metal layer is laminated on the magnetic layer.

17. An electronic device comprising: A storage device, wherein The storage device comprises: A plurality of magnetoresistive elements, Each of the plurality of magnetoresistive elements comprises: Laminate, a storage layer laminated on the laminate and having a changeable magnetization direction, a non-magnetic layer laminated on the storage layer, and a reference layer laminated on the nonmagnetic layer and having a fixed magnetization direction, and The laminate comprises: a magnetic layer having a changeable magnetization direction; and The non-magnetic metal layer is laminated on the magnetic layer.

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