Magnetron sputtering equipment

Abstract

The invention discloses magnetron sputtering equipment which comprises a body with a cavity, a bias assembly, sputtering assemblies, first driving assemblies and a bearing assembly used for containing a base material, the two sputtering assemblies are arranged in the cavity in a spaced mode, and the two first driving assemblies are connected with the corresponding sputtering assemblies correspondingly. The body is provided with a cavity, the sputtering assemblies are arranged in the cavity to drive the sputtering assemblies to rotate, one end of each bias assembly penetrates through the body and extends into the cavity, the bias assemblies are suspended above the interval between the two sputtering assemblies, and the other end of each bias assembly is externally connected with a power supply to generate an electric field to repel target materials sputtered by the sputtering assemblies to the surface of the base material. And the bearing assembly is arranged in the cavity and is arranged below the sputtering assembly at an interval. According to the invention, concentrated sputtering substances can be effectively guided and repelled, so that the sputtering substances are more uniformly distributed on a base material, the existence of large particles is reduced, and the coating quality is improved.

Description

Technical Field

[0001] The invention relates to the technical field of magnetron sputtering, in particular to a magnetron sputtering device. Background Art

[0002] Magnetron sputtering is a process in which the material to be deposited is used as a target, fixed on the cathode, and the substrate is used as the anode. After the system is evacuated to a high vacuum, it is filled with gas, and a high voltage is applied between the cathode and the anode to form a glow discharge. During the sputtering process, the coupling of the magnetic field and the electric field causes the electrons to move in a spiral shape near the surface of the target, increasing the ionization rate of the gas molecules. The cations generated by the ionization bombard the target at a high speed under the action of the electric field, causing the sputtered ions of the target to detach from the surface of the target and deposit on the substrate to form a thin film. The sputtering cathode is a commonly used device in magnetron sputtering. When assembling the sputtering cathode, the target needs to be set at the center of the sputtering cathode shell to ensure the uniformity of the sputtering cathode coating.

[0003] In the prior art, the target is usually placed directly opposite to the substrate, so that the sputtered ions of the target are separated from the target and deposited on the substrate. When bombarding the target, the target will produce smaller sputtered ions and larger sputtered molecular clusters at the same time. The sputtered molecular clusters will also be deposited on the substrate, which makes the film formed on the substrate have larger particles and affects the coating effect. Furthermore, the placement position of the target in the prior art is often relatively fixed, and the target ion sputtering separation degree and surface temperature rise during its working process are often subject to the preset structure of the cavity. Summary of the invention

[0004] The technical problem to be solved by the present invention is that in the prior art, the target material is usually arranged directly opposite to the substrate, so that the thin film formed on the substrate has larger particles and affects the coating effect.

[0005] In order to solve the above technical problems, the present invention provides a magnetron sputtering device, including a main body with a cavity, a bias assembly, a sputtering assembly, a first driving assembly and a supporting assembly for placing a substrate, two of the sputtering assemblies are arranged in the cavity at intervals, two of the first driving assemblies are respectively connected to the corresponding sputtering assemblies to drive the sputtering assemblies to rotate, one end of the bias assembly passes through the main body and extends into the cavity, and the bias assembly is suspended above the interval between the two sputtering assemblies, the other end of the bias assembly is externally connected to a power supply to generate an electric field to repel the target material sputtered by the sputtering assembly to the surface of the substrate, and the supporting assembly is arranged in the cavity and is arranged below the sputtering assembly at intervals.

[0006] Furthermore, the sputtering assembly includes a rotating shaft, a plurality of magnetic components and a target material, the target material is arranged around the outer circumference of the rotating shaft, and the plurality of magnetic components are installed on the rotating shaft at intervals and located between the target material and the rotating shaft, and the output shaft of the first driving assembly is connected.

[0007] Furthermore, the rotating shaft includes a first shell and a second shell, the first shell cover is arranged on the outer peripheral side of the second shell, and is spaced apart from the outer wall of the second shell to define a first flow channel having a liquid outlet, the second shell has a second flow channel having a liquid inlet, and the first flow channel is connected to the second flow channel to allow the cooling medium to flow from the second flow channel to the first flow channel.

[0008] Furthermore, there are three magnetic members, and the magnetic poles of the three magnetic members distributed clockwise facing the target are S pole, N pole and S pole respectively;

[0009] Alternatively, the three magnetic members distributed in a clockwise direction face the magnetic poles of the target material, namely, an N pole, an S pole, and an N pole.

[0010] Furthermore, it also includes a second driving component, which is connected to the corresponding sputtering component to drive the sputtering component to move in a horizontal direction.

[0011] Furthermore, the bias assembly includes a conductive column and a bias plate, one end of the conductive column extends through the body into the cavity and is connected to the bias plate, and the bias plate is suspended above the gap between the two sputtering assemblies.

[0012] Furthermore, the conductive column includes a conductor, an insulator, a connecting portion and a fixing member, the conductor is mounted on the body via the fixing member, and the portion of the conductor located in the cavity is connected to the bias plate via the connecting portion, and the insulator is wrapped around the conductor.

[0013] Furthermore, the cross section of the biasing plate is V-shaped, T-shaped or W-shaped.

[0014] Furthermore, the main body has a feed port and a discharge port, the feed port and the discharge port are arranged on two sides of the main body opposite to each other, the supporting assembly includes a third driving assembly and a plurality of rollers, the plurality of rollers are arranged at intervals along the feed port toward the discharge port, and the third driving assembly is used to drive the rollers to rotate.

[0015] Furthermore, it also includes a spectral camera for monitoring the glow discharge condition in the cavity.

[0016] Compared with the prior art, the magnetron sputtering device of the embodiment of the present invention has the following beneficial effects:

[0017] The embodiment of the present invention can concentrate the sputtered material in the middle position at the first time by sputtering the targets on both sides relative to each other, avoiding uneven deposition caused by direct alignment with the substrate. The electric field generated by the bias component can effectively guide and repel the concentrated sputtered material to make it more evenly distributed on the substrate, thereby reducing the presence of large particles and improving the quality of the coating. The rotation function of the sputtering component and the application of the first driving component make the sputtering process more flexible and controllable, and the parameters can be adjusted as needed to obtain ideal thin film properties. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 is a schematic structural diagram of a magnetron sputtering device including a V-shaped bias plate provided in an embodiment of the present invention;

[0019] Figure 2 is a schematic structural diagram of a magnetron sputtering device including a T-shaped bias plate provided in an embodiment of the present invention;

[0020] Figure 3 is a schematic structural diagram of a magnetron sputtering device including a W-shaped bias plate provided in an embodiment of the present invention;

[0021] Figure 4 It is a schematic structural diagram of a substrate, a sputtering assembly, a bias plate and a spectral camera provided in an embodiment of the present invention;

[0022] Figure 5 is a layout diagram of a magnetic component of a first embodiment of a sputtering assembly provided by an embodiment of the present invention;

[0023] Figure 6 is a layout diagram of a magnetic component of a second embodiment of a sputtering assembly provided in an embodiment of the present invention;

[0024] Figure 7 is a layout diagram of a magnetic component of a third embodiment of a sputtering assembly provided by an embodiment of the present invention;

[0025] Figure 8 This is an electric field distribution diagram of a magnetron sputtering device with a V-shaped bias plate provided in an embodiment of the present invention;

[0026] Fig. 9 It is a magnetic field distribution diagram of a first embodiment of a magnetron sputtering device with a V-shaped bias plate provided in an embodiment of the present invention;

[0027] Fig.10 is a magnetic field distribution diagram of a second embodiment of a magnetron sputtering device with a V-shaped bias plate provided in an embodiment of the present invention;

[0028] Fig.11 is a magnetic field distribution diagram of a third embodiment of a magnetron sputtering device with a V-shaped bias plate provided in an embodiment of the present invention;

[0029] Fig.12 This is an electric field distribution diagram of a magnetron sputtering device with a T-shaped bias plate provided in an embodiment of the present invention;

[0030] Fig.13 It is a magnetic field distribution diagram of a first embodiment of a magnetron sputtering device with a T-shaped bias plate provided in an embodiment of the present invention;

[0031] Fig.14 It is a magnetic field distribution diagram of a second embodiment of a magnetron sputtering device with a T-shaped bias plate provided in an embodiment of the present invention;

[0032] Fig.15 It is a magnetic field distribution diagram of a third embodiment of a magnetron sputtering device with a T-shaped bias plate provided in an embodiment of the present invention;

[0033] Fig.16 This is an electric field distribution diagram of a magnetron sputtering device with a W-shaped bias plate provided in an embodiment of the present invention;

[0034] Fig.17 It is a magnetic field distribution diagram of a first embodiment of a magnetron sputtering device with a W-shaped bias plate provided in an embodiment of the present invention;

[0035] Fig.18 is a magnetic field distribution diagram of a second embodiment of a magnetron sputtering device with a W-shaped bias plate provided in an embodiment of the present invention;

[0036] Fig.19 is a magnetic field distribution diagram of a third embodiment of a magnetron sputtering device with a W-shaped bias plate provided in an embodiment of the present invention;

[0037] In the figure, 1. main body; 11. cavity; 12. feed port; 13. discharge port; 2. bias assembly; 21. conductive column; 211. conductor; 212. insulator; 213. connection part; 214. fixing part; 22. bias plate; 3. sputtering assembly; 31. rotating shaft; 311. first shell; 312. second shell; 313. first flow channel; 314. second flow channel; 32. magnetic part; 33. target material; 4. substrate; 5. bearing assembly; 51. roller; 6. spectral camera. DETAILED DESCRIPTION

[0038] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0039] like Figures 1 to 3As shown, the present invention provides a magnetron sputtering device, including a main body 1 with a cavity 11, a bias assembly 2, a sputtering assembly 3, a first driving assembly and a supporting assembly 5 for placing a substrate 4. The main body 1 ensures the efficient sputtering process and prevents external pollution. Two sputtering assemblies 3 are arranged in the cavity 11 at intervals to realize the magnetron sputtering process, and the collision of target 33 ions between each other is used to reduce energy, reduce the damage of target 33 ions to substrate 4, and also reduce the temperature rise of substrate 4 during the process. The two first driving assemblies are respectively connected to the corresponding sputtering assemblies 3 to drive the sputtering assemblies 3 to rotate. One end of the bias assembly 2 passes through the main body 1 and extends into the cavity 11, and the bias assembly 2 is suspended above the interval between the two sputtering assemblies 3. The other end of the bias assembly 2 is connected to an external power supply to generate an electric field to repel the target 33 sputtered by the sputtering assembly 3 to the surface of the substrate 4. The supporting assembly 5 is arranged in the cavity 11 and is arranged below the sputtering assembly 3 at intervals.

[0040] In this embodiment, the sputtered materials are concentrated in the middle position at the first time by sputtering the targets 33 on both sides relative to each other, avoiding uneven deposition caused by direct alignment with the substrate 4. The electric field generated by the bias component 2 can effectively guide and repel the concentrated sputtered materials, making them more evenly distributed on the substrate 4, thereby reducing the presence of large particles and improving the quality of the coating. The rotation function of the sputtering component 3 and the application of the first driving component make the sputtering process more flexible and controllable, and the parameters can be adjusted as needed to obtain ideal film properties.

[0041] like Figure 2 As shown, the sputtering assembly 3 includes a rotating shaft 31, a plurality of magnetic parts 32 and a target material 33. The target material 33 is arranged around the outer peripheral side of the rotating shaft 31. When voltage is applied, the target material 33 will be bombarded by high-speed ions, causing the material to be sputtered from the surface of the target material 33 and finally deposited on the substrate 4 to form a thin film. The plurality of magnetic parts 32 are installed on the rotating shaft 31 at intervals and are located between the target material 33 and the rotating shaft 31 to construct a magnetic field environment. This magnetic field will couple with the electric field to make electrons move near the surface of the target material 33, thereby increasing the ionization rate of gas molecules, improving the plasma density, and thus enhancing the sputtering efficiency. In addition, the magnetic field can also constrain the plasma to concentrate it in the effective sputtering area on the surface of the target material 33, thereby reducing unnecessary energy loss. The output shaft of the first drive assembly is connected so that the rotating shaft 31 can receive power and drive the entire sputtering assembly 3 to rotate, so as to achieve a uniform sputtering effect through its rotation function.

[0042] In this embodiment, by properly arranging the magnetic members 32 , an effective magnetic field can be established around the target material 33 , thereby increasing the plasma density and the sputtering rate. Meanwhile, the rotating target material 33 helps to obtain a more uniform film thickness.

[0043] It can be understood that, compared with a planar cathode, the target material 33 of the rotating sputtering assembly 3 has a high utilization rate, which can reach more than 80%. In addition, in the face of different process steps, the position of the rotating shaft 31 can be adjusted to cope with different working conditions, which is more flexible than a planar target.

[0044] like Figure 3 As shown, the rotating shaft 31 includes a first shell 311 and a second shell 312. The first shell 311 is covered on the outer peripheral side of the second shell 312 and is spaced apart from the outer wall of the second shell 312 to define a first flow channel 313 having a liquid outlet. The second shell 312 has a second flow channel 314 with a liquid inlet for guiding the cooling medium to enter. The first flow channel 313 is connected to the second flow channel 314 so that the cooling medium can flow from the second flow channel 314 to the first flow channel 313 and finally flow out of the first flow channel 313 from the liquid outlet to discharge the cooling medium that has absorbed heat.

[0045] This embodiment provides cooling for the rotating shaft 31 and the target material 33 through the above-mentioned structure. During the magnetron sputtering process, a large amount of heat will be generated due to ion bombardment of the target material 33. By introducing a cooling medium circulation, the generated heat can be effectively taken away to maintain the equipment within a safe operating temperature range. This can not only protect the target material 33, but also prevent the rotating shaft 31 from changes in material properties or mechanical failures due to high temperature, such as increased wear caused by thermal expansion.

[0046] Read also Figures 5 to 7 There are three magnetic members 32, and the magnetic poles of the three magnetic members 32 distributed clockwise toward the target 33 are S pole, N pole and S pole respectively;

[0047] The configuration of this embodiment will produce an alternating magnetic field direction between adjacent magnetic parts 32. The change from S pole to N pole and then back to S pole will form a closed magnetic field line loop, creating a magnetic field structure near the surface of the target material 33, which can effectively capture and confine electrons, causing them to move near the surface of the target material 33, increasing the chance of collision between electrons and working gas molecules, improving the ionization rate of gas molecules, and thereby enhancing the plasma density.

[0048] In addition, an arrangement is also provided, such as three magnetic members 32 distributed clockwise, with the magnetic poles facing the target 33 being N pole, S pole and N pole respectively. The above configuration will also produce an alternating magnetic field direction, forming a closed magnetic field line loop.

[0049] This embodiment creates a closed magnetic field line loop, allowing electrons to stay near the surface of the target material 33 for a long time and repeatedly collide with gas molecules, thereby increasing the ionization probability and improving the plasma density. A denser plasma means that more positive ions can be accelerated to collide with the target material 33, resulting in a higher sputtering rate and better material utilization.

[0050] Specifically, the layout of the magnetic component 32 includes but is not limited to these three schemes. From top to bottom, the outer magnetic poles of the three layouts are: the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the left is S pole, N pole and S pole, and the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the right is S pole, N pole and S pole; the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the left is N pole, S pole and N pole, and the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the right is N pole, S pole and N pole; the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the left is N pole, S pole and N pole, and the magnetic pole distribution of the magnetic component 32 of the sputtering component 3 on the right is S pole, N pole and S pole, and its magnetic flux lines are distributed as shown in the figure. Figures 9 to 11 , Figures 13 to 15 as well as Figures 17 to 19 shown.

[0051] The target material 33 ions are affected by the combined effects of the electric field and the magnetic field during the process. Under the action of the magnetic field, the target material 33 ions bombarded by the cations move toward the central axis, and the target material 33 ions generated by the target materials 33 of the sputtering assemblies 3 on both sides collide with each other in the middle. The influence of the electric field is superimposed, and the target material 33 ions in the middle position are affected by the electric field force away from the bias plate 22, which deviates the direction of movement and causes them to be deposited on the substrate 4.

[0052] Furthermore, it also includes a second driving assembly, which is connected to the corresponding sputtering assembly 3 to drive the sputtering assembly 3 to move in the horizontal direction.

[0053] In this embodiment, the second driving component is used to move the sputtering component 3 in the horizontal direction, which can optimize the magnetic field distribution and ensure that there is a uniform and sufficiently strong magnetic field in the entire sputtering area, so that during the magnetron sputtering process, the electrons in the plasma are guided to make spiral motion near the surface of the target material 33, thereby increasing the probability of collision between the electrons and the working gas molecules, generating more ions to bombard the target material 33, and then increasing the sputtering rate, ensuring that there is sufficient electromagnetic field effect on the entire surface of the target material 33. In addition, by driving the sputtering component 3 to move in the horizontal direction, the local overheating caused by concentrated bombardment at the same position for a long time can be distributed more evenly to prevent the surface temperature of the target material 33 from being too high, while also ensuring the consistency of thin film deposition.

[0054] Furthermore, the bias assembly 2 includes a conductive column 21 and a bias plate 22. One end of the conductive column 21 extends through the body 1 into the cavity 11 and is connected to the bias plate 22. The conductive column 21 not only serves as a physical support, but also can transmit the voltage provided by the external power supply to the bias plate 22. The bias plate 22 is suspended above the gap between the two sputtering assemblies 3. When the bias plate 22 receives the voltage through the conductive column 21, an electric field is formed around it. The sputtering assembly 3 generates negatively charged electrons and positively charged sputtering ions through ionization reaction. The electric field can act on the charged particles (usually positive ions) sputtered from the target material 33, changing their motion trajectories to guide and control the path of the sputtered target material 33 particles, so that these particles are more evenly deposited on the surface of the substrate 4. In addition, by adjusting the voltage applied to the bias plate 22, the energy of the sputtered particles can be optimized, so that they hit the substrate 4 at a more appropriate speed and angle, thereby improving the deposition efficiency and film adhesion.

[0055] Furthermore, the conductive column 21 includes a conductor 211, an insulator 212, a connecting portion 213 and a fixing member 214. The conductor 211 is mounted on the body 1 through the fixing member 214, and the portion of the conductor 211 located in the cavity 11 is connected to the bias plate 22 through the connecting portion 213 to transmit the voltage provided by the external power supply to the bias plate 22 inside the cavity 11. The conductive column 21 is made of a material with good conductivity, such as copper or aluminum; the insulator 212 is wrapped around the conductor 211 to prevent current leakage and short circuit. The insulator 212 has good insulation performance and high temperature resistance and corrosion resistance. In addition, the insulator 212 also plays a protective role to prevent operators or other metal parts from accidentally contacting the charged conductor 211, thereby ensuring safety.

[0056] The connection part 213 of this embodiment is the interface between the conductor 211 and the bias plate 22, ensuring a reliable electrical connection between the two, and can be connected by a mechanical fixing structure (such as screws, clamps, etc.) or an electrical connection (such as a welding point or a plug-in connector) to ensure stable power transmission even in the case of vibration or temperature changes. The fixing part 214 is used to firmly mount the conductor 211 on the body 1 (i.e., the device housing) to ensure that the conductive column 21 is stable and motionless during the entire working process. It helps to maintain the correct relative position between the conductive column 21 and the bias plate 22 to ensure the accurate distribution of the electric field.

[0057] Furthermore, the cross section of the biasing plate 22 is V-shaped, T-shaped or W-shaped.

[0058] like Figures 8 to 11As shown, the V-shaped structure can make the electric field lines more concentrated at the tip, thereby improving the guiding effect on the charged particles, enhancing the electric field concentration, and helping to more accurately control the sputtered ion path, so that it is more evenly distributed and deposited on the substrate 4. In addition, the V-shaped angle can help deflect larger and heavier non-charged particles (such as molecular clusters) by being rebounded by the V-shaped structure, thereby reducing their chances of reaching the substrate 4.

[0059] like Figures 12 to 15 As shown, the horizontal portion at the top of the T-shaped structure can increase the contact area between the bias plate 22 and the surrounding environment, which not only enhances the mechanical stability, but also may improve the thermal conductivity and help dissipate heat. In addition, the vertical portion of the T-shaped structure can create a more complex electric field pattern, making the electric field lines more dispersed, which is beneficial for adjusting the energy and movement trajectory of the ions, so that the ions have a more ideal energy distribution when approaching the substrate 4, thereby improving the quality of the film.

[0060] like Figures 16 to 19 As shown, the W-shaped structure includes multiple concave and convex surfaces, so that the charged particles experience multiple reflections during the process. The multiple reflection effect can further disperse and randomize the movement direction of the particles, which helps to achieve more uniform deposition. In addition, through the complex path of the W-shaped structure, larger particle clusters are more easily broken up into smaller particles, which can reduce the deposition of large particles on the substrate 4 and improve the smoothness and flatness of the film.

[0061] This embodiment uses the above-mentioned bias plates 22 of different shapes to strengthen the electric field on the central axis, so that the ions of the target material 33 close to the central axis are more easily sputtered onto the substrate 4, so as to better control the ion behavior during the sputtering process and improve the ionization rate of the process; specifically, by optimizing the electric field distribution and particle path, it is ensured that the ions of the target material 33 can form a uniform film on the substrate 4, and reduce the deposition of large particles or non-ideal particles on the substrate 4, thereby reducing defects in the film. Different shapes can select the most suitable configuration according to specific application requirements to meet the requirements of different materials or film characteristics.

[0062] Furthermore, the main body 1 has a feed port 12 and a discharge port 13, and the feed port 12 and the discharge port 13 are arranged on both sides of the main body 1 opposite to each other. The supporting component 5 includes a third driving component and a plurality of rollers 51, and the plurality of rollers 51 are arranged at intervals along the feed port 12 toward the discharge port 13. The third driving component is used to drive the rollers 51 to rotate. When driven by the third driving component, the rollers 51 will rotate, thereby driving the substrate 4 to advance continuously or intermittently in the cavity 11.

[0063] In this embodiment, when performing the coating operation, the substrate 4 (such as a sheet, a film, etc.) can enter the chamber 11 through the feed port 12 and leave the chamber 11 through the discharge port 13. Since the substrate 4 moves on the rotating roller 51, it can ensure that the surface of the substrate 4 is exposed to the sputtering ions at a consistent speed, which helps to form a more uniform thin film coating. In addition, in combination with the rotating sputtering assembly 3, the uniformity and quality of the coating can be further optimized.

[0064] like Figure 4 As shown, a spectral camera 6 is also included to monitor the glow discharge condition in the cavity 11 .

[0065] The spectral camera 6 of this embodiment can capture the light emitted by the glow discharge in the cavity 11 and convert it into an electronic signal. Since different elements or compounds emit light of characteristic wavelengths at a specific temperature, the physical and chemical processes occurring in the cavity 11 can be understood by analyzing these spectra. The captured spectral information will be uploaded to the visual processing terminal for further analysis and processing, and the corresponding physical parameters, such as the ionization rate of gas molecules, will be calculated according to the preset algorithm. Based on the ionization effect of gas molecules inferred from the spectrum, the system can automatically adjust or suggest adjusting the relevant process parameters (such as gas flow, pressure, applied voltage, etc.) to ensure that the optimal gas molecule ionization rate is achieved, which helps to improve the sputtering efficiency of the target material 33 atoms or molecules, thereby improving the quality and uniformity of the film.

[0066] It should be noted that the first drive assembly, the second drive assembly and the third drive assembly can all adopt motors, cylinders or other drive structures, which are not particularly limited here.

[0067] In summary, an embodiment of the present invention provides a magnetron sputtering device, which performs sputtering through rotating sputtering assemblies 3 placed face to face, thereby ensuring the utilization rate of the target material 33 while reducing the damage to the substrate 4 caused by sputtering. The high utilization rate of the target material 33 also extends the service life of the target material 33 and reduces the cost of manual replacement. In addition, the ionization rate of magnetron sputtering is increased by adding a bias plate 22 of a corresponding shape, which not only retains the low-damage sputtering characteristics of the face-to-face rotating sputtering assembly 3, but also improves the speed and uniformity of film formation.

[0068] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. A magnetron sputtering device, characterized in that: It includes a main body with a cavity, a bias assembly, a sputtering assembly, a first driving assembly and a supporting assembly for placing a substrate, two of the sputtering assemblies are arranged in the cavity at intervals, two of the first driving assemblies are respectively connected to the corresponding sputtering assemblies to drive the sputtering assemblies to rotate, one end of the bias assembly passes through the main body and extends into the cavity, and the bias assembly is suspended above the interval between the two sputtering assemblies, the other end of the bias assembly is externally connected to a power supply to generate an electric field to repel the target material sputtered by the sputtering assembly to the surface of the substrate, and the supporting assembly is arranged in the cavity and is arranged below the sputtering assembly at intervals.

2. The magnetron sputtering device according to claim 1, characterized in that: The sputtering assembly includes a rotating shaft, a plurality of magnetic components and a target material. The target material is arranged around the outer circumference of the rotating shaft, and the plurality of magnetic components are installed on the rotating shaft at intervals and located between the target material and the rotating shaft, and the output shaft of the first driving assembly is connected.

3. The magnetron sputtering device according to claim 2, characterized in that: The rotating shaft includes a first shell and a second shell. The first shell cover is arranged on the outer peripheral side of the second shell and is spaced apart from the outer wall of the second shell to define a first flow channel having a liquid outlet. The second shell has a second flow channel having a liquid inlet. The first flow channel is connected to the second flow channel to allow cooling medium to flow from the second flow channel to the first flow channel.

4. The magnetron sputtering device according to claim 2, characterized in that: There are three magnetic members, and the magnetic poles of the three magnetic members distributed clockwise facing the target are S pole, N pole and S pole respectively; Alternatively, the three magnetic members distributed in a clockwise direction face the magnetic poles of the target material, namely, an N pole, an S pole, and an N pole.

5. The magnetron sputtering device according to claim 1, characterized in that: It also includes a second driving component, which is connected to the corresponding sputtering component to drive the sputtering component to move in a horizontal direction.

6. The magnetron sputtering device according to claim 1, characterized in that: The bias assembly includes a conductive column and a bias plate. One end of the conductive column extends through the body into the cavity and is connected to the bias plate. The bias plate is suspended above the gap between the two sputtering assemblies.

7. The magnetron sputtering device according to claim 6, characterized in that: The conductive column includes a conductor, an insulator, a connecting portion and a fixing member. The conductor is installed on the body through the fixing member, and the portion of the conductor located in the cavity is connected to the bias plate through the connecting portion. The insulator is wrapped around the conductor.

8. The magnetron sputtering device according to claim 6, characterized in that: The cross section of the biasing plate is V-shaped, T-shaped or W-shaped.

9. The magnetron sputtering device according to claim 1, characterized in that: The main body has a feed port and a discharge port, and the feed port and the discharge port are arranged on two sides of the main body opposite to each other. The supporting component includes a third driving component and a plurality of rollers, and the plurality of rollers are arranged at intervals along the feed port toward the discharge port. The third driving component is used to drive the rollers to rotate.

10. The magnetron sputtering device according to claim 1, characterized in that: A spectral camera is also included for monitoring the glow discharge condition in the cavity.

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