Growth equipment and system

Abstract

The invention provides growth equipment and a growth system. The growth equipment comprises a shell, an air floatation tray and an isolation structure, an accommodating cavity, a growth gas channel and a rotary gas channel are formed in the shell; the upper end of the accommodating cavity is opened; the communicating part of the rotary gas channel and the accommodating cavity is lower than the end part of the upper end of the accommodating cavity; the rotating gas channel is provided with a rotating gas inlet and a rotating gas outlet which are communicated with the outside; the growth gas channel is positioned above the accommodating cavity and is communicated with the accommodating cavity; the growth gas channel is provided with a growth gas inlet and a growth gas outlet which are communicated with the outside; the air floatation tray is coaxially and rotatably arranged in the accommodating cavity; an isolation structure isolates the rotating gas channel from the growth gas channel. When the growth equipment is used, the rotation stability of the air floatation tray is improved, mutual friction between the air floatation tray and the containing cavity is reduced, the growth quality of the substrate is improved, the service life and the maintenance period of the containing cavity and the air floatation tray are prolonged, and the growth cost of the substrate is reduced.

Description

Technical Field

[0001] The present invention belongs to the technical field of chemical vapor deposition and specifically relates to a growth device and system. Background Art

[0002] In the operation of wafer coating based on Chemical Vapor Deposition (CVD), controlling the rotation of the wafer during the growth process is an important method to improve the uniformity of growth results at different positions of the wafer. The reason is that wafer rotation can make the temperature flow field distribution at different positions of the wafer tend to be consistent.

[0003] The wafer growth device in the prior art is as follows Figure 1 As shown, it comprises a shell 1 and an air flotation tray 2, wherein a receiving chamber 11, a growth gas channel 12 and a rotation gas channel 13 are arranged in the shell 1, wherein the rotation gas channel 13 is located below the receiving chamber 11 and communicates with the receiving chamber 11, and the growth gas channel 12 is located above the receiving chamber 11 and communicates with the receiving chamber 11. The air flotation tray 2 is rotatably arranged in the receiving chamber 11, and an annular gap area 01 is formed between the outer side surface of the air flotation tray 2 and the side wall of the receiving chamber 11.

[0004] When the wafer 3 grows in the wafer growth device, the wafer 3 is carried on the wafer tray 4, and the wafer tray 4 is carried on the air flotation tray 2. The rotating gas enters the accommodating chamber 11 through the rotating gas channel 13, and drives the air flotation tray 2 to rotate, thereby rotating the wafer 3; the growth gas reaches the top of the accommodating chamber 11 through the growth gas channel 12, and is deposited on the wafer 3, so that the wafer 3 grows. During the growth process of the wafer 3, the rotating gas also flows into the growth gas channel 12 from the upper end of the gap area 01, and is discharged from the wafer growth device together with the growth gas. At the same time, the growth gas also enters the accommodating chamber 11 from the upper end of the gap area 01, which causes the following problems:

[0005] 1. When the growth gas enters the accommodating chamber, it will be deposited on the bottom of the air flotation tray 2 and the wall of the accommodating chamber 11 to form a covering. These coverings will increase the friction between the air flotation tray 2 and the wall of the accommodating chamber 11, and have an adverse effect on the rotation speed and stability of the air flotation tray 2; and as the thickness of the wafer 3 grows, the amount of deposited coverings increases, the friction increases, and the impact on the rotation of the air flotation tray 2 increases. When the wafer 3 grows to a certain thickness, the air flotation tray 2 and the accommodating chamber 11 must be cleaned and maintained, which limits the maintenance and service life of the air flotation tray 2 and the entire growth chamber, and increases the growth cost.

[0006] 2. The rotating gas easily carries particles from the cavity wall of the accommodating cavity 11 and the covering material on the flotation tray 2 into the growth gas channel 12. The particles that flow into the growth gas channel 12 along with the rotating gas fall on the wafer 3 to form defects, thus affecting the wafer quality. Moreover, as the wafer growth thickness increases, the cavity wall of the accommodating cavity 11 and the covering material on the flotation tray 2 increase in thickness, and the number of particles entering the growth gas channel 12 increases accordingly. In order to ensure the quality of the wafer 3, the maintenance and service life of the flotation tray 2 and the entire growth chamber can only be shortened, resulting in an increase in the growth cost.

[0007] 3. The rotating gas damages the growing covering material near the gap area 01 of the wafer 3, causing the covering material at this area to form loose protruding particles, which contaminate the wafer 3. As the thickness of the wafer 3 increases, the thickness of the covering material at 01 increases, and this phenomenon becomes more serious. In order to ensure the quality of the wafer 3, the only way is to reduce the maintenance and service life of the growth chamber, which increases the growth cost.

[0008] 4. The rotating gas and the growth gas form convection at the upper end of the gap area 01, resulting in an unstable flow field at this position, affecting the growth of the wafer 3 and affecting the wafer quality.

[0009] That is, when the growth equipment in the prior art is in use, there is a large amount of interaction between the rotating gas and the growth gas, the presence of a large number of particles causes wafer defects, and the unstable rotation of the flotation tray reduces the uniformity of wafer growth, resulting in poor wafer growth quality. In addition, the accommodating chamber and the flotation tray need to be frequently cleaned due to the deposition cover, resulting in a short service life of the accommodating chamber and the flotation tray, thereby increasing the growth cost. Summary of the invention

[0010] The purpose of the present invention is to provide a growth device and system, aiming to improve the growth quality of substrates; increase the maintenance and service life of accessories, and reduce the growth cost.

[0011] To achieve the above object, the present invention provides a growth device, comprising:

[0012] A shell, wherein a receiving chamber is formed therein, and the upper end of the receiving chamber is an open end; a growth gas channel and a rotation gas channel are also formed on the shell; the rotation gas channel is connected to the receiving chamber, and the connecting portion of the two is lower than the upper end of the receiving chamber; the rotation gas channel has a rotation gas inlet and a rotation gas outlet connected to the outside; the growth gas channel is located above the receiving chamber and is connected to the receiving chamber; the growth gas channel has a growth gas inlet and a growth gas outlet connected to the outside;

[0013] an air floating tray, at least partially disposed in the accommodating cavity; the air floating tray is coaxial with the accommodating cavity, and the air floating tray is configured to be able to rotate; and,

[0014] An isolation mechanism is used to isolate the rotating gas channel from the growing gas channel; the isolation mechanism is arranged between the side of the air flotation tray and the side wall of the accommodating chamber, and is at least partially located above the connecting portion between the rotating gas channel and the accommodating chamber.

[0015] Optionally, the isolation mechanism is located at the upper end of the accommodating cavity.

[0016] Optionally, the isolation mechanism is a maze structure.

[0017] Optionally, the isolation structure includes at least one first convex portion and at least one second convex portion; the first convex portion is arranged on the side wall of the accommodating cavity, and the first convex portion extends radially inwardly of the accommodating cavity; the second convex portion is arranged on the side of the air floating tray, and the second convex portion extends radially outwardly of the accommodating cavity;

[0018] At least one of the first protrusions and at least one of the second protrusions are alternately arranged in the axial direction of the accommodating cavity, and the first protrusions and the second protrusions partially overlap in the radial direction of the accommodating cavity.

[0019] Optionally, the number of the first convex portion and the number of the second convex portion are respectively one.

[0020] Optionally, the growing device comprises a first main shell, a second main shell and a cover plate; the first main shell is arranged above the second main shell, and the first main shell is connected to the second main shell; the cover plate is located between the first main shell and the second main shell;

[0021] A concave cavity is formed on the upper surface of the second main shell, and the upper end of the concave cavity is an open end; the cover plate is arranged on the upper surface of the second main shell, and a first through hole is provided on the cover plate, the first through hole is coaxially arranged with the concave cavity, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity;

[0022] The accommodating cavity includes the concave cavity and the first through hole; the portion of the cover plate located above the concave cavity constitutes the first convex portion;

[0023] The second main shell has a cavity formed therein, and the cavity forms at least a part of the rotating gas channel. A gap is provided between the lower surface of the first main shell and the cover plate, and the gap forms at least a part of the growing gas channel.

[0024] Optionally, the cover plate includes a first sub-plate body and a second sub-plate body spliced ​​to each other, a portion of the edge of the first sub-plate body is formed as a first arc structure, a portion of the edge of the second sub-plate body is formed as a second arc structure, and the second arc structure is spliced ​​with the first arc structure to form the first through hole.

[0025] Optionally, the second main shell includes a second shell plate and a second partition plate; the cross section of the second shell plate is arc-shaped, and the concave side of the second shell plate is arranged upward; the second partition plate is arranged horizontally and connected to the concave side of the second shell plate; the concave cavity is formed on the upper surface of the second partition plate; the cavity channel is also formed on the second partition plate;

[0026] The first main shell includes a first shell plate and a first partition plate; the first shell plate has an arc-shaped cross section, the concave side of the first shell plate is arranged downward, and the first shell plate is connected to the second shell plate; the first partition plate is arranged horizontally and connected to the concave side of the first shell plate; there is the gap between the first partition plate and the cover plate.

[0027] Optionally, the rotating gas channel includes a rotating gas inlet and a rotating gas outlet; one end of the rotating gas inlet channel passes through the bottom of the accommodating chamber to communicate with the accommodating chamber, and the end of the rotating gas inlet channel away from the accommodating chamber constitutes the rotating gas inlet, one end of the rotating gas outflow channel passes through the side wall of the accommodating chamber to communicate with the accommodating chamber, and the end of the rotating gas outflow channel away from the accommodating chamber constitutes the rotating gas outlet.

[0028] To achieve the above objectives, the present invention also provides a growth system, comprising a growth gas source, a rotating gas source and a growth device as described in any of the preceding items; the growth gas source is connected to the growth gas inlet; the rotating gas source is connected to the rotating gas inlet.

[0029] Compared with the prior art, the growth equipment and system of the present invention have the following advantages:

[0030] The aforementioned growth equipment includes a shell, an air floating tray and an isolation mechanism; a containing chamber is formed in the shell, and the upper end of the containing chamber is an open end; a growth gas channel and a rotating gas channel are also formed on the shell; the rotating gas channel is connected to the containing chamber, and the connecting part of the two is lower than the upper end of the containing chamber; the rotating gas channel has a rotating gas inlet and a rotating gas outlet connected to the outside; the growth gas channel is located above the containing chamber and is connected to the containing chamber; the growth gas channel has a growth gas inlet and a growth gas outlet connected to the outside; the air floating tray is at least partially arranged in the containing chamber, the air floating tray is coaxial with the containing chamber, and the air floating tray is configured to be able to rotate; the isolation mechanism is used to isolate the rotating gas channel and the growth gas channel; the isolation mechanism is arranged between the side of the air floating tray and the side wall of the containing chamber, and is at least partially located above the connecting part between the rotating gas channel and the containing chamber. The isolation structure and the rotating gas outlet are arranged to effectively reduce the amount of the growth gas entering the accommodating chamber and the rotating gas entering the growth gas channel, thereby reducing or even eliminating the deposition covering in the rotating gas channel, reducing or even eliminating the cross-convection between the growth gas and the rotating gas, thereby improving the uniformity of substrate growth, reducing the number of defects caused by particles, improving the quality of substrate growth, increasing the service life of the accommodating chamber and the air flotation tray, and thus reducing the cost of substrate growth. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings are used to better understand the present invention and do not constitute an improper limitation of the present invention.

[0032] Figure 1 It is a schematic diagram of the partial structure of a growth device in the prior art;

[0033] Figure 2 is a schematic diagram of the overall structure of a growth device provided by the present invention according to an embodiment;

[0034] Figure 3 is a schematic diagram of the overall structure of a growth device provided by the present invention according to an embodiment, Figure 3 and Figure 2 The observation direction is different;

[0035] Figure 4 is a schematic diagram of the overall structure of a growth device provided by the present invention according to an embodiment, Figure 4 and Figure 3 and Figure 2 The observation direction is different;

[0036] Figure 5 is a partial cross-sectional view of a growth device provided according to an embodiment of the present invention;

[0037] Figure 6 is an exploded schematic diagram of a growth device provided according to an embodiment of the present invention, and also shows a silicon wafer tray and a silicon wafer;

[0038] Figure 7 is a schematic diagram of an application scenario of a growth device provided by the present invention according to an embodiment;

[0039] Figure 8 yes Figure 7 An enlarged schematic diagram of point A of the application scenario of the growth device shown.

[0040] [Description of reference numerals is as follows]:

[0041] 10-growth device, 1, 100-shell, 11, 101-accommodating chamber, 12, 102-growth gas channel, 102a-growth gas inlet, 102b-growth gas outlet, 13, 103-rotating gas channel, 103a-rotating gas inlet, 103b-rotating gas outlet, 1031-rotating gas inlet, 1032-rotating gas outlet, 110-first main shell, 111-first shell plate, 1111-first edge portion, 112-first partition plate, 120-second main shell, 121-recessed cavity, 122-second shell plate, 1221-second edge portion, 123-second partition plate, 124- Cavity, 1241-first sub-cavity, 1242-second sub-cavity, 130-cover plate, 131-first sub-plate body, 1311-first arc structure, 132-second sub-plate body, 1321-second arc structure, 140-first side plate, 141-second through hole, 142-third through hole, 150-second side plate, 151-fourth through hole, 152-fifth through hole, 160-third side plate, 170-fourth side plate, 2, 200-floating tray, 300-isolation mechanism, 310-first convex portion, 320-second convex portion, 400-rotation axis, 01-gap area, 4, 20-wafer tray, 3, 30-wafer. DETAILED DESCRIPTION

[0042] The following is an explanation of the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the present embodiment only illustrate the basic concept of the present invention in a schematic manner, and only the components related to the present invention are shown in the figure instead of being drawn according to the number, shape and size of the components in the actual implementation. The type, quantity and proportion of each component in the actual implementation can be a random change, and the component layout type may also be more complicated.

[0043] In addition, each embodiment of the following description has one or more technical features, but this does not mean that the user of the present invention must implement all the technical features in any embodiment at the same time, or can only implement part or all of the technical features in different embodiments separately. In other words, under the premise that implementation is possible, those skilled in the art can selectively implement part or all of the technical features in any embodiment according to the disclosure of the present invention and according to the design specifications or implementation requirements, or selectively implement a combination of part or all of the technical features in multiple embodiments, thereby increasing the flexibility of the implementation of the present invention.

[0044] As used in this specification, the singular forms "one", "an", and "the" include plural objects, and the plural form "a plurality" includes more than two objects, unless the content clearly indicates otherwise. As used in this specification, the term "or" is generally used in a sense that includes "and / or", unless the content clearly indicates otherwise, and the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection. It can be a mechanical connection or an electrical connection. It can be directly connected or indirectly connected through an intermediate medium, and it can be a connection between two elements or an interactive relationship between two elements. Relational terms such as the terms "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly indicate the number of technical features indicated. It should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] The object of the present invention is to provide a growth device that can be applied to epitaxy (e.g., epitaxy of SiC, GaSn, InP, etc.), two-dimensional materials (e.g., growth of graphene, molybdenum disulfide), and other thin film growth based on chemical vapor deposition. In this article, the structures in the growth device are uniformly referred to as substrates. Through the application of the growth device, the uniformity of substrate growth can be improved and the growth quality of the substrate can be improved. In addition, the components of the substrate growth device also have the advantage of long service life.

[0046] In order to make the purpose, advantages and features of the present invention more clear, the present invention is further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are all in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar components.

[0047] Figures 2 to 4 1 is a view of the growth device 10 provided by the embodiment of the present invention in different directions. Figure 5 is a cross-sectional view of the growth device 10, Figure 6 is an exploded schematic diagram of the growth apparatus.

[0048] like Figures 2 to 6 As shown, the growth device 10 includes a shell 100, an air flotation tray 200 and an isolation mechanism 300. A receiving chamber 101 is formed in the shell 100, and the upper end of the receiving chamber 101 is an open end. A growth gas channel 102 and a rotating gas channel 103 are also formed on the shell 100. The rotating gas channel 103 is connected to the receiving chamber 101, and the connecting portion of the rotating gas channel 103 and the receiving chamber 101 is lower than the upper end of the receiving chamber 101. The rotating gas channel 103 also has a rotating gas inlet 103a (not marked in the figure) and a rotating gas outlet 103b (not marked in the figure) connected to the outside. The growth gas channel 102 is located above the receiving chamber 101 and is connected to the receiving chamber 101. The growth gas channel 102 has a growth gas inlet 102a (not marked in the figure) and a growth gas outlet 102b (not marked in the figure) connected to the outside. The air floating tray 200 is at least partially arranged in the accommodating chamber 101, the air floating tray 200 is coaxial with the accommodating chamber 101, and the air floating tray 200 is also configured to be able to rotate. The isolation mechanism 300 is arranged between the side of the air floating tray 200 and the side wall of the accommodating chamber 101, and the isolation mechanism 300 is at least partially located above the connecting portion between the rotating gas channel 103 and the accommodating chamber 101. The isolation mechanism 300 is configured to isolate the rotating gas channel 103 and the growth gas 102.

[0049] Figure 7 and Figure 8 FIG. 3 is a schematic diagram showing an application scenario of the growth device, wherein the growth substrate is, for example, a SiC wafer, which is referred to as wafer 30 herein. Figure 7 and Figure 8 As shown, during operation, the wafer tray 20 carrying the wafer 30 is arranged on the upper surface of the air flotation tray 200; when the rotating gas and the growth gas are introduced into the rotating gas channel 103, the rotating gas enters the accommodating chamber 101 and drives the air flotation tray 200 to rotate, and the air flotation tray 200 drives the wafer tray 20 and the wafer 30 thereon to rotate synchronously, and the rotating gas is also discharged from the growth device from the rotating gas outlet 103b of the rotating gas channel 103; the growth gas is deposited on the wafer 30 and forms a covering, so that the wafer 30 grows. In this process, the isolation mechanism 300 prevents the growth gas from entering the accommodating chamber 101, and also prevents the rotating gas from entering the growth gas channel, thereby preventing the interaction between the rotating gas and the growth gas. Therefore, the growth device has the following advantages:

[0050] (1) The amount of growth gas entering the chamber 101 is effectively reduced or even eliminated, so the amount of covering material formed on the chamber wall of the chamber 101 and the surface of the air flotation tray 200 is reduced or even eliminated, thereby making the friction between the air flotation tray 200 and the chamber 101 relatively stable, thereby improving the rotation stability of the air flotation tray 200. As the thickness of the wafer 30 increases, the amount of covering material accumulated in the chamber 101 is relatively reduced or even eliminated, and the amount of covering material accumulated at the bottom of the air flotation tray 200 is reduced or even eliminated, which can reduce the cleaning, maintenance and replacement frequency of the chamber 101 and the air flotation tray 200, thereby increasing the service life of the air flotation tray 200 and the chamber 101 and reducing the wafer growth cost.

[0051] (2) The covering materials on the wall of the accommodating chamber 101 and the surface of the air flotation tray 200 are reduced or even completely eliminated. Even if part of the rotating gas passes through the isolation structure 300 and merges into the growth gas channel 102, the number of covering material particles carried by the rotating gas is difficult to reach the wafer 30, thereby improving the quality of the wafer 30. Therefore, the service life of the accommodating chamber 101 and the air flotation tray 200 can also be increased, and the growth cost of the wafer 30 can be reduced.

[0052] (3) The amount of rotating gas introduced into the growth gas channel 102 is reduced, which can reduce the damage to the covering of the wafer 30 near the edge of the air flotation tray 200. The introduction of particles into the wafer 30 to cause defects is reduced, and the quality of the wafer 30 is improved. As a result, the service life of the accommodating chamber 101 can also be increased, and the growth cost of the wafer 30 can be reduced.

[0053] (4) The interaction between the rotating gas and the growing gas is reduced, so that the convection formed by the two gases at the upper edge of the air flotation tray 200 is weakened, which is beneficial to improving the flow field stability at the upper edge of the air flotation tray 200, thereby improving the growth uniformity of the wafer 30.

[0054] In summary, in the growth device provided by the embodiment of the present invention, the interaction between the rotating gas and the growth gas is reduced or even completely eliminated by providing the rotating gas outlet 103b and the isolation structure 300. This reduces or even eliminates the deposited covering at the bottom of the air flotation tray 200 and the accommodating chamber 101, reduces or even eliminates the convection between the growth gas and the rotating gas, further improves the growth uniformity of the wafer 30, reduces the number of defects of the wafer 30 caused by particles, improves the growth quality of the wafer, and also increases the service life of the accommodating chamber 101 and the air flotation tray 200, thereby reducing the growth cost of the wafer 30.

[0055] It should be noted that the cross-section of the accommodating chamber 101 and the cross-section of the air-floating tray 200 are usually circular. However, in an alternative embodiment, the cross-section of the accommodating chamber 101 may not be circular, but may be any one of a triangle, a rectangle, and a polygon. Similarly, the cross-section of the air-floating tray 200 is not circular, but may be any one of a triangle, a rectangle, and a polygon, as long as the air-floating tray 200 can rotate around its own axis driven by the rotating gas and can carry the wafer tray 20. It should also be noted that, regardless of whether the cross-section of the accommodating chamber 101 is circular, the radial direction of the accommodating chamber 101 mentioned herein refers to the extension direction of a straight line perpendicular to the axis of the accommodating chamber 101 and intersecting the axis of the accommodating chamber 101.

[0056] The air floating tray 200 may be completely located in the accommodating cavity 101 , for example, the upper end surface of the air floating tray 200 is flush with the upper end surface of the accommodating cavity 101 . Of course, the upper end of the air floating tray 200 may also protrude from the accommodating cavity 101 .

[0057] The embodiment of the present invention has no particular limitation on the arrangement of the rotating gas channel 103 , as long as the gas entering the accommodating chamber 101 through the rotating gas channel 103 can drive the air flotation tray 200 to rotate and then can be discharged from the accommodating chamber 101 from the rotating gas outlet 103 b of the rotating gas channel 103 .

[0058] In an optional embodiment, if Figure 5 and Figure 6As shown, the rotating gas channel 103 includes two sub-channels, namely a rotating gas inlet channel 1031 and a rotating gas outlet channel 1032, wherein one end of the rotating gas inlet channel 1031 passes through the bottom of the accommodating chamber 101 and communicates with the accommodating chamber 101, and one end of the rotating gas outlet channel 1032 passes through the side wall of the accommodating chamber 101 and communicates with the accommodating chamber 101. The end of the rotating gas inlet channel 1031 away from the accommodating chamber 101 constitutes the rotating gas inlet 103a, and the end of the rotating gas outlet channel 1032 away from the accommodating chamber 101 constitutes the rotating gas outlet 103b. In this way, the rotating gas flows into the accommodating chamber 101 from the rotating gas inlet channel 1031 and drives the air flotation tray 200 to rotate, and then is discharged from the accommodating chamber 101 through the rotating gas outlet channel 1032.

[0059] In addition, in order to improve the rotation stability of the air floating tray 200, in the embodiment of the present invention, it is preferred that the air floating tray 200 is connected to the cavity wall of the accommodating cavity 101 through a rotating shaft 400. The specific connection method is that a connecting hole (not marked in the figure) is opened at the bottom of the accommodating cavity 101, the connecting hole is coaxially arranged with the accommodating cavity 101, the lower end of the rotating shaft 400 is rotatably inserted into the connecting hole, and the upper end of the rotating shaft 400 is connected to the air floating tray 200 and keeps relatively still in the circumferential direction with the air floating tray 200.

[0060] Preferably, the isolation mechanism 300 is located at the upper end of the accommodating cavity 101 .

[0061] Please focus on Figure 5 In an optional embodiment, the isolation mechanism 300 is a labyrinth structure. Specifically, the isolation mechanism 300 includes at least one first protrusion 310 and at least one second protrusion 320. The first protrusion 310 is arranged on the side wall of the accommodating chamber 101, and the first protrusion 310 extends radially inwardly of the accommodating chamber 101 (that is, the first protrusion 310 extends in a direction away from the axis of the accommodating chamber 101). The second protrusion 320 is arranged on the side of the air floating tray 200, and the second protrusion 320 extends radially outwardly of the accommodating chamber 101 (that is, the second protrusion 320 extends in a direction away from the axis of the accommodating chamber 101). At least one first protrusion 310 and at least one second protrusion 320 are alternately arranged in the axial direction of the accommodating chamber 101, and the first protrusion 310 and the second protrusion 320 partially overlap in the radial direction of the accommodating chamber 101.

[0062] The embodiment of the present invention does not specifically limit the specific number of the first convex parts 310 and the second convex parts 320. For example, in the following embodiment, the number of the first convex parts 310 is two, and the number of the second convex parts 320 is one. In this case, one second convex part 320 is located between the two first convex parts 310. In another example, the number of the first convex parts 310 is one, and the number of the second convex parts 320 is two. In this case, one first convex part 310 is located between the two second convex parts 320. In another example, the number of the first convex parts 310 is two, and the number of the second convex parts 320 is also two. In this case, the two first convex parts 310 and the two second convex parts 320 can be arranged from top to bottom in the order of: first convex part 310-second convex part 320-first convex part 310-second convex part 320, or can be arranged from top to bottom in the order of: second convex part 320-first convex part 310-second convex part 320-first convex part 310. For another example, the number of the first convex portion 310 and the number of the second convex portion 320 are both one, in which case the first convex portion 310 may be above the second convex portion 320 , or the first convex portion 310 may be below the second convex portion 320 .

[0063] In a specific embodiment, the first convex portion 310 and the second convex portion 320 are both one, and the first convex portion 310 is above the second convex portion 320. Preferably, in this embodiment, the first convex portion 310 is a part of the housing 100.

[0064] Please continue to refer to Figure 5 Combined with Figure 6 The housing 100 includes a first main housing 110, a second main housing 120 and a cover plate 130. The first main housing 110 and the second main housing 120 are arranged from top to bottom, and the cover plate 130 is located between the first main housing 110 and the second main housing 120.

[0065] A concave cavity 121 is formed on the upper surface of the second main shell 120, and the upper end of the concave cavity 121 is an open end. The cover plate 130 covers the upper surface of the second main shell 120, and a first through hole (not marked in the figure) is formed on the cover plate 130. The first through hole is coaxially arranged with the concave cavity 121, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity 121, so that the cover plate 130 partially protrudes inwardly from the side wall of the concave cavity 121 along the radial direction of the concave cavity 121 and is located above the concave cavity 121. In this case, the accommodating cavity 101 includes the concave cavity 121 and the first through hole. The portion of the cover plate 130 located above the concave cavity 121 constitutes the first convex portion 310. It can be understood that the radial direction of the concave cavity 121 is the radial direction of the accommodating cavity 101.

[0066] There is also a gap between the lower surface of the first main housing 120 and the cover plate 130, and the gap between the lower surface of the second main housing 120 and the cover plate 130 constitutes at least a portion of the growth gas channel 102. It should be noted that the gap between the first main housing 110 and the cover plate 130 includes the space between the first main housing 110 and the first through hole 130.

[0067] The second main housing 120 is also formed with a cavity 124, which constitutes at least a part of the rotating gas channel 103. Specifically, the cavity includes a first sub-cavity 1241 and a second sub-cavity 1242, wherein the first sub-cavity 1241 passes through the bottom of the accommodating chamber 101 and communicates with the accommodating chamber 101, and one end of the second sub-cavity 1242 passes through the side wall of the accommodating chamber 101 and communicates with the accommodating chamber 101. That is, the first sub-cavity 1241 constitutes at least a part of the rotating gas inflow channel 1031, and the second sub-cavity 1242 constitutes at least a part of the rotating gas outflow channel 1032.

[0068] The second sub-cavity 1242 may not extend to the upper surface of the second main shell 120, or may extend to the upper surface of the second main shell 120 (eg, Figure 6 When the second sub-cavity 1242 extends to the upper surface of the second main housing 120 , the cover plate 130 serves to isolate the second sub-cavity 1242 from the growth gas channel 102 .

[0069] Optionally, the first main housing 110 is a combined structure, which includes a first housing plate 111 and a first partition plate 112. The first housing plate 111 is an arc-shaped plate, and its shape in a cross section perpendicular to the axis of the housing 100 is an arc, preferably a circular arc. The first partition plate 112 is connected to the concave side of the first housing plate 111.

[0070] Similarly, the second main shell 120 is also a combined structure. The second main shell 120 includes a second shell plate 122 and a second partition plate 123. The second shell plate 122 is an arc-shaped plate, and its shape on the cross section perpendicular to the axis of the shell 100 is an arc, preferably a circular arc. The second partition plate 123 is connected to the concave side of the second shell plate 122. When assembling the shell 100, the concave side of the first main shell 111 is arranged downward, the concave side of the second main shell 121 is arranged upward, and the first main shell 111 is connected to the second main shell 121. The first partition plate 112 and the second partition plate 123 are both arranged horizontally. In this way, the upper surface of the second partition plate 123 constitutes the upper surface of the second main shell 120, and the lower surface of the first partition plate 112 constitutes the lower surface of the first main shell 110.

[0071] Based on the configuration of the first main housing 110 and the second main housing 120 , the concave cavity 121 is formed on the upper surface of the second partition plate 123 , and the cavity 124 is formed on the second partition plate 123 . Also, the gap is provided between the first partition plate 112 and the cover plate 130 .

[0072] It should be noted that, in the embodiment of the present invention, the first shell plate 111 has two first edge portions 1111 opposite to each other in the circumferential direction thereof, and the distance from the first partition plate 112 to the first edge portion 1111 is greater than zero. Similarly, the second shell plate 122 has two second edge portions 1221 opposite to each other in the circumferential direction thereof, and the distance from the second partition plate 123 to the second edge portion 1221 is greater than zero. Moreover, after the first shell plate 111 and the second shell plate 122 are connected, the distance between the first partition plate 112 and the second partition plate 123 is greater than the thickness of the cover plate 130. In this way, it is possible to ensure that there is the gap between the first partition plate 112 and the cover plate 130 after the first main shell 110 and the second main shell 120 are assembled on the outside.

[0073] Furthermore, the cover plate 130 is also a modular structure, which includes a first sub-plate body 131 and a second sub-plate body 132 that are spliced ​​to each other. Part of the edge of the first sub-plate body 131 is formed into a first arc structure 1311, and part of the edge of the second sub-plate body 132 is formed into a second arc structure 1321. The second arc structure 1321 and the first arc structure 1311 are spliced ​​to form the first through hole. The advantage of setting the cover plate 130 as a modular structure is that it is easy to disassemble the cover plate 130, and then it is easy to maintain the air floating tray 200 and the accommodating chamber 101. Preferably, the first arc structure 1311 and the second arc structure 1321 are both semi-circular arcs.

[0074] In addition, the housing 100 further includes a first side plate 140 and a second side plate 150, and the first side plate 140 and the second side plate 150 are respectively arranged at two axial ends of the first main housing 110 (or the second main housing 120). The first side plate 140 is connected to the first main housing 110 and the second main housing 120, and the second side plate 1150 is also connected to the first main housing 110 and the second main housing 120.

[0075] The first side plate 140 is provided with a second through hole 141 and a third through hole 142. The second side plate 150 is formed with a fourth through hole 151 and a fifth through hole 152. The second through hole 141 and the fourth through hole 151 are respectively communicated with the gap between the first partition plate 112 and the cover plate 130, so that the growth gas channel 102 also includes the second through hole 141 and the fourth through hole 151. The third through hole 142 and the fifth through hole 152 are respectively communicated with the cavity 124 on the second partition plate 112. In this way, the rotation channel 102 also includes the third through hole 142 and the fifth through hole 152.

[0076] In an optional embodiment, the third through hole 142 is connected to one end of the first sub-channel 1241 away from the accommodating chamber 101, and constitutes the rotating gas inlet 103a, and the fifth through hole 152 is connected to one end of the second sub-channel 1242 away from the accommodating chamber 101, and constitutes the rotating gas outlet 103b. That is, the rotating gas inlet channel 1031 includes the first sub-channel 1241 and the third through hole 142, and the rotating gas outflow channel 1032 includes the second sub-channel 1242 and the fifth through hole 152. In addition, correspondingly, the second through hole 141 constitutes the growth gas inlet 102a, and the fourth through hole 151 constitutes the rotating gas outlet 103b.

[0077] The housing 100 may further include a third side plate 160 and a fourth side plate 170, which are arranged along the radial direction of the first shell plate 111 (or the second shell plate 122) and are respectively located on opposite sides of the first partition plate 112. The third side plate 160 is connected to the first shell plate 111 and the second shell plate 122, and the fourth side plate 170 is also connected to the first shell plate 111 and the second shell plate 122.

[0078] Furthermore, an embodiment of the present invention further provides a growth system, comprising a growth gas source, a rotation gas source and the growth device as described above. The growth gas source is connected to the growth gas inlet 102a to provide growth gas to the growth device. The rotation gas source is connected to the rotation gas inlet 103a to provide rotation gas to the growth device.

[0079] Although the present invention is disclosed as above, it is not limited thereto. Those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A growth device, characterized in that: include: A shell, wherein a receiving chamber is formed therein, and the upper end of the receiving chamber is an open end; a growth gas channel and a rotation gas channel are also formed on the shell; the rotation gas channel is connected to the receiving chamber, and the connecting portion of the two is lower than the upper end of the receiving chamber; the rotation gas channel has a rotation gas inlet and a rotation gas outlet connected to the outside; the growth gas channel is located above the receiving chamber and is connected to the receiving chamber; the growth gas channel has a growth gas inlet and a growth gas outlet connected to the outside; an air floating tray, at least partially disposed in the accommodating cavity; the air floating tray is coaxial with the accommodating cavity, and the air floating tray is configured to be able to rotate; and, An isolation structure is used to isolate the rotating gas channel from the growing gas channel; the isolation structure is arranged between the side of the air floating tray and the side wall of the accommodating chamber, and is at least partially located above the connecting portion between the rotating gas channel and the accommodating chamber.

2. The growth device according to claim 1, characterized in that The isolation structure is located at the upper end of the accommodating cavity.

3. The growth device according to claim 1 or 2, characterized in that: The isolation mechanism is a labyrinth structure.

4. The growth device according to claim 3, characterized in that The isolation structure includes at least one first convex portion and at least one second convex portion; the first convex portion is arranged on the side wall of the accommodating cavity, and the first convex portion extends radially inwardly of the accommodating cavity; the second convex portion is arranged on the side of the air floating tray, and the second convex portion extends radially outwardly of the accommodating cavity; At least one of the first protrusions and at least one of the second protrusions are alternately arranged in the axial direction of the accommodating cavity, and the first protrusions and the second protrusions partially overlap in the radial direction of the accommodating cavity.

5. The growth device according to claim 4, characterized in that The number of the first convex portion and the number of the second convex portion are respectively one.

6. The growth device according to claim 5, characterized in that The growing device comprises a first main shell, a second main shell and a cover plate; the first main shell is arranged above the second main shell, and the first main shell is connected to the second main shell; the cover plate is located between the first main shell and the second main shell; A concave cavity is formed on the upper surface of the second main shell, and the upper end of the concave cavity is an open end; the cover plate is arranged on the upper surface of the second main shell, and a first through hole is provided on the cover plate, the first through hole is coaxially arranged with the concave cavity, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity; The accommodating cavity includes the concave cavity and the first through hole; the portion of the cover plate located above the concave cavity constitutes the first convex portion; The second main shell has a cavity formed therein, and the cavity forms at least a part of the rotating gas channel. A gap is provided between the lower surface of the first main shell and the cover plate, and the gap forms at least a part of the growing gas channel.

7. The growth device according to claim 6, characterized in that The cover plate includes a first sub-plate body and a second sub-plate body spliced ​​to each other, a portion of the edge of the first sub-plate body is formed into a first arc structure, a portion of the edge of the second sub-plate body is formed into a second arc structure, and the second arc structure is spliced ​​with the first arc structure to form the first through hole.

8. The growth device according to claim 6, characterized in that The second main shell includes a second shell plate and a second partition plate; the cross section of the second shell plate is arc-shaped, and the concave side of the second shell plate is arranged upward; the second partition plate is arranged horizontally and connected to the concave side of the second shell plate; the concave cavity is formed on the upper surface of the second partition plate; the cavity channel is also formed on the second partition plate; The first main shell includes a first shell plate and a first partition plate; the first shell plate has an arc-shaped cross section, the concave side of the first shell plate is arranged downward, and the first shell plate is connected to the second shell plate; The first partition plate is arranged horizontally and connected to the concave side of the first shell plate; there is the gap between the first partition plate and the cover plate.

9. The growth device according to claim 1, characterized in that The rotating gas channel includes a rotating gas inlet and a rotating gas outlet; one end of the rotating gas inlet channel passes through the bottom of the accommodating chamber to communicate with the accommodating chamber, and the end of the rotating gas inlet channel away from the accommodating chamber constitutes the rotating gas inlet, one end of the rotating gas outflow channel passes through the side wall of the accommodating chamber to communicate with the accommodating chamber, and the end of the rotating gas outflow channel away from the accommodating chamber constitutes the rotating gas outlet.

10. A growth system, characterized in that: It comprises a growth gas source, a rotation gas source and a growth device as described in any one of claims 1 to 9; the growth gas source is connected to the growth gas inlet; the rotation gas source is connected to the rotation gas inlet.

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